Semiconductor equipment and its edge ring components

Abstract

A semiconductor device and its edge ring assembly are disclosed. The edge ring assembly includes: a focusing ring disposed on a focusing ring heater, the focusing ring surrounding the outer edge of an electrostatic chuck and spaced apart from the electrostatic chuck, and having a second gap region between the electrostatic chuck, the focusing ring heater, and the focusing ring; a thermally conductive layer disposed between the focusing ring and the focusing ring heater, including a plurality of thermally conductive portions distributed circumferentially along the focusing ring, with a first gap region between at least some adjacent thermally conductive portions, the first gap region exposing a portion of the focusing ring surface facing the focusing ring heater; and at least one first fluid channel, each first fluid channel being disposed within the exposed surface region of the focusing ring corresponding to a first gap region, one end of the first fluid channel near the inner edge of the focusing ring communicating with the second gap region, and the first fluid channel radially penetrating the focusing ring. This application can reduce the amount of polymer residue in the second gap region, improve process reliability, and increase product yield.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and more specifically to a semiconductor device and its edge ring assembly. Background Technology

[0002] In semiconductor manufacturing processes, the process chamber of plasma processing equipment typically contains components such as electrostatic chucks (ESCs), focus rings (F / Rs), and focus ring heaters, with gaps existing between them. To maintain the cleanliness of the process chamber, conventional process chamber cleaning methods such as non-plasma particle cleaning (NPPC), fabless dry cleaning (WLDC), and dry clean seasoning (DCS) are commonly used to remove deposits within the process chamber.

[0003] However, the gap between the electrostatic chuck, focusing ring, and focusing ring heater can easily leave incompletely deposited polymer residues during the initial operation of the process chamber and at the end of the preventive maintenance cycle (PM cycle). Existing cleaning methods such as NPPC, WLDC, and DCS are not effective at cleaning the polymer in this gap, leading to the release of polymer particles during process execution. These particles often settle at the wafer edges, appearing as a special edge PA map in offline monitoring. This not only causes significant uptime loss but also easily generates product defects, severely impacting process reliability and product yield. Utility Model Content

[0004] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0005] To address the existing problems, this utility model provides an edge ring assembly for use in semiconductor equipment. The semiconductor equipment includes an electrostatic chuck and a focusing ring heater disposed close together. The edge ring assembly includes: Focusing ring; A heat-conducting layer is disposed on the first surface of the focusing ring, including a plurality of heat-conducting portions distributed along the circumference of the focusing ring, and at least a first gap region is formed between adjacent heat-conducting portions, the first gap region exposing a portion of the first surface of the focusing ring; The focusing ring is provided with at least one first fluid channel, which is opened in the first surface exposed area of ​​the focusing ring corresponding to the first gap area, and the first fluid channel penetrates the focusing ring radially. The edge ring component is configured as follows: The first surface of the focusing ring is disposed on the focusing ring heater through the heat-conducting layer. The focusing ring surrounds the outer edge of the electrostatic chuck and is spaced apart from the electrostatic chuck. A second gap region is defined between the focusing ring heater, the focusing ring, and the electrostatic chuck. The first fluid channel communicates with the second gap region.

[0006] In some embodiments of this application, the first fluid channel is a groove disposed on the first surface of the focusing ring, the groove penetrating the focusing ring radially.

[0007] In some embodiments of this application, there are multiple first gap regions, and the multiple first gap regions are distributed at circumferential intervals along the focusing ring; The number of the first fluid channels is multiple, and the multiple first fluid channels are distributed at intervals along the circumference of the focusing ring, with at least one first fluid channel opened in each first gap region.

[0008] In some embodiments of this application, it also includes: A cover ring is provided around the outer edge of the focusing ring, and at least one second fluid channel is provided on the surface of the cover ring facing the focusing ring heater, the second fluid channel penetrating the cover ring radially; The second fluid channel is connected to at least one of the first fluid channels.

[0009] In some embodiments of this application, the cross-sectional area of ​​the second fluid channel is greater than or equal to the sum of the cross-sectional areas of all connected second fluid channels.

[0010] In some embodiments of this application, the focusing ring includes a first solid region surrounding the first fluid channel, the equivalent total capacitance of the first solid region and the first fluid channel being a first capacitance; the focusing ring also includes a second solid region, the volume of the second solid region being equal to the sum of the volume of the first solid region and the volume of the first fluid channel, the capacitance of the second solid region being a second capacitance, and the second capacitance being greater than the first capacitance.

[0011] In some embodiments of this application, a plurality of first gap regions are distributed at equal central angle intervals along the circumference of the focusing ring, and a plurality of first fluid channels are distributed at equal central angle intervals along the circumference of the focusing ring.

[0012] In some embodiments of this application, the focusing ring is made of monocrystalline silicon.

[0013] According to another aspect of this application, a semiconductor device is provided, comprising: Process chambers; Electrostatic chucks and focusing ring heaters are installed in the process chamber; The edge ring assembly described in any one of the above embodiments is disposed on the focusing ring heater, surrounds the outer edge of the electrostatic chuck and is spaced apart from the electrostatic chuck, and the second gap region is defined between the electrostatic chuck, the focusing ring heater and the focusing ring of the edge ring assembly.

[0014] In some embodiments of this application, the semiconductor device further includes a fluid drive device for generating a flow conduction acting on the second gap region.

[0015] The semiconductor equipment and its edge ring assembly of this application, by setting a first fluid channel in the first surface exposed area of ​​the focusing ring corresponding to the first gap region, and the first fluid channel penetrating the focusing ring radially, and by configuring the edge ring assembly such that one end of the first fluid channel is connected to the second gap region between the electrostatic chuck, the focusing ring heater and the focusing ring, can use the first fluid channel to promptly discharge the incompletely deposited polymer that is prone to remain in the second gap region during the initial operation of the process chamber and the end of the preventive maintenance cycle, thereby reducing the amount of polymer residue in this region, and thus avoiding polymer release particles falling on the wafer edge during the process execution stage, reducing the risk of equipment uptime loss and product defects, effectively improving process reliability and increasing product yield. Attached Figure Description

[0016] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0017] In the attached image: Figure 1 A schematic diagram of the internal structure of the process chamber of a plasma processing device in the related art is shown.

[0018] Figure 2 A schematic diagram of the airflow direction within the process chamber of a plasma processing device in the related art is shown.

[0019] Figure 3A schematic diagram of the edge ring assembly surrounding the electrostatic chuck is shown in a specific embodiment of the present invention.

[0020] Figure 4 A cross-sectional schematic diagram of the focusing ring and the covering ring according to a specific embodiment of the present invention is shown, wherein... Figure 4 (a) shows a schematic cross-sectional view of the focusing ring. Figure 4 (b) shows a schematic cross-sectional view of the covering ring.

[0021] Figure 5 A schematic diagram showing the electrical characteristics of a focusing ring in the related art and the focusing ring of this application is provided.

[0022] Figure 6 A schematic diagram of the airflow direction within the process chamber of this application is shown. Detailed Implementation

[0023] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the present invention.

[0024] It should be understood that this invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this invention to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0025] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this utility model, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0026] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0028] like Figures 1-2 As shown, in related technologies, the process chamber of a plasma processing device typically includes components such as an electrostatic chuck 110, a focusing ring 121, and a focusing ring heater 130. The electrostatic chuck 110 serves as a support and adsorption component for the wafer 150, providing stable support for its execution. The focusing ring 121 is mounted on the focusing ring heater 130, with a thermally conductive layer 122 between them for heat conduction. The focusing ring 121 surrounds the outer edge of the electrostatic chuck 110 and is spaced apart from it. After assembly, a gap 140 is formed between the electrostatic chuck 110, the focusing ring heater 130, and the focusing ring 121.

[0029] The aforementioned gap 140 is prone to leaving incompletely deposited polymer 101 (e.g., polymer generated by plasma etching) in the initial stage of process chamber operation and at the end of preventive maintenance cycles. Existing cleaning methods such as NPPC, WLDC, and DCS have difficulty effectively penetrating the aforementioned gap 140 via airflow (the airflow direction can be seen in...). Figure 1 and Figure 2The arrows in the diagram indicate that the cleaning effect on residual polymer 101 is not good, resulting in the release of particulate matter from residual polymer 101 in the gap between process execution stages. These particulate matter often falls on the edge of wafer 150, which is manifested as a special edge particulate matter analysis spectrum in offline monitoring. This not only causes a lot of equipment uptime loss, but also easily produces product defects, seriously affecting process reliability and product yield.

[0030] To address at least one of the aforementioned technical problems, this application provides an edge ring assembly applied to a semiconductor device, the semiconductor device including an electrostatic chuck and a focusing ring heater, the edge ring assembly comprising: Focusing ring; A heat-conducting layer is disposed on the first surface of the focusing ring, including a plurality of heat-conducting parts distributed along the circumference of the focusing ring, and at least a first gap region is formed between adjacent heat-conducting parts, the first gap region exposing a portion of the first surface of the focusing ring; The focusing ring is provided with at least one first fluid channel, which is opened in the first surface exposed area of ​​the focusing ring corresponding to a first gap area, and the first fluid channel penetrates the focusing ring radially. The edge ring component is configured as follows: The first surface of the focusing ring is disposed on the focusing ring heater through a heat-conducting layer. The focusing ring surrounds the outer edge of the electrostatic chuck and is spaced apart from the electrostatic chuck. A second gap region is defined between the focusing ring heater, the focusing ring, and the electrostatic chuck. The first fluid channel is connected to the second gap region.

[0031] According to the edge ring assembly of the semiconductor equipment of this application, by setting a first fluid channel in the first surface exposed area of ​​the focusing ring corresponding to the first gap area, and the first fluid channel penetrating the focusing ring radially, by configuring the edge ring assembly such that one end of the first fluid channel is connected to the second gap area between the electrostatic chuck, the focusing ring heater and the focusing ring, the incompletely deposited polymer that is prone to remain in the second gap area at the beginning of the process chamber operation and at the end of the preventive maintenance cycle can be discharged in a timely manner by means of the first fluid channel, reducing the amount of polymer residue in the area, thereby avoiding polymer release particles from falling on the wafer edge during the process execution stage, reducing equipment uptime loss and the risk of product defects, effectively improving process reliability and increasing product yield.

[0032] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0033] The following is for reference. Figures 3-6This application describes an edge ring assembly according to one embodiment of the present application. The edge ring assembly is applied to a semiconductor device, which includes an electrostatic chuck 310 and a focusing ring heater 320 disposed close together. The edge ring assembly includes a focusing ring 211 and a thermally conductive layer disposed on a first surface of the focusing ring 211. The thermally conductive layer includes a plurality of thermally conductive portions 212 distributed circumferentially along the focusing ring 211, with a first gap region 213 between at least partially adjacent thermally conductive portions 212, the first gap region 213 exposing a portion of the first surface of the focusing ring 211.

[0034] The focusing ring 211 is provided with at least one first fluid channel 214. The first fluid channel 214 is opened in the first surface exposed area of ​​the focusing ring 211 corresponding to a first gap area 213, and the first fluid channel 214 penetrates the focusing ring 211 radially.

[0035] The edge ring assembly is configured such that: the first surface of the focusing ring 211 is disposed on the focusing ring heater 320 through a heat-conducting layer; the focusing ring 211 surrounds the outer edge of the electrostatic chuck 310 and is spaced apart from the electrostatic chuck 310; a second gap region is defined between the focusing ring heater 320, the focusing ring 211 and the electrostatic chuck 310; and the first fluid channel 214 is connected to the second gap region.

[0036] Specifically, the electrostatic chuck 310 and the focusing ring heater 320 of the semiconductor device are positioned close to each other. The focusing ring 211 has a ring-shaped structure and is mounted on the focusing ring heater 320. It surrounds the outer edge of the electrostatic chuck 310 and maintains a distance from the electrostatic chuck 310, thereby forming a second gap region between the focusing ring heater 320, the electrostatic chuck 310, and the focusing ring 211. The distance between the focusing ring 211 and the electrostatic chuck 310 can be precisely controlled according to process requirements.

[0037] A heat-conducting layer is disposed on the surface of the focusing ring 211 facing the focusing ring heater 320 (i.e., the first surface of the focusing ring 211, or the back surface of the focusing ring 211), and located between the focusing ring 211 and the focusing ring heater 320. It includes multiple heat-conducting portions 212 distributed circumferentially along the focusing ring 211 to achieve efficient heat conduction. At least some adjacent heat-conducting portions 212 have a first gap region, which exposes a portion of the first surface of the focusing ring 211. The distribution density and structural dimensions of the heat-conducting portions 212 can be optimized according to the thermal distribution characteristics of the focusing ring 211 to achieve uniform temperature control.

[0038] The focusing ring 211 is provided with at least one first fluid channel 214, which is formed in the first surface exposed area of ​​the focusing ring 211 corresponding to the first gap region. The cross-sectional shape of each first fluid channel 214 can be set according to actual conditions, such as rectangular or semi-circular; one end of it near the inner edge of the focusing ring 211 is connected to the second gap region, and the first fluid channel 214 penetrates the focusing ring 211 radially. The radial length of the first fluid channel 214 is adapted to the outer diameter of the focusing ring 211, and its width and depth are designed according to fluid dynamics principles to ensure that a stable fluid flow path can be formed during the process, effectively removing any polymer particles that may be deposited.

[0039] For example, the airflow direction within the process chamber can be seen in... Figure 6 Part of the airflow acts on the second gap region 301 and is discharged to the outside of the focusing ring 211 through the first fluid channel 214, while the direction of the other part of the airflow is similar to that of the airflow in related technologies.

[0040] On the one hand, the second gap region 301 between the electrostatic chuck 310, the focusing ring heater 320, and the focusing ring 211 is a region where polymer residue is easily retained. One end of the first fluid channel 214 is connected to this second gap region 301, and the first fluid channel 214 penetrates the focusing ring 211 radially, thus creating a fluid flow path from the second gap region 301 to the outside of the focusing ring 211. This fluid flow path allows the flow guide generated by the molecular pump, dry pump, etc., to directly act on the second gap region 301. During the process, polymer that may deposit in the second gap region 301 will be directionally moved from the second gap region 301 to the outside of the focusing ring 211 through the first fluid channel 214 under the action of the flow guide and discharged, thereby promptly removing the polymer and reducing the amount of polymer residue in the second gap region 301 from the source. This solves the problem of incompletely deposited polymer easily remaining in the second gap region 301 during the initial operation of the process chamber and at the end of the preventive maintenance cycle.

[0041] On the other hand, by reducing polymer residue in the second gap region 301, polymer release particles during the process execution stage can be prevented from falling onto the wafer edge, reducing equipment uptime loss due to particles and reducing product defects, thereby improving process reliability and increasing product yield.

[0042] It is also worth noting that the heat-conducting layer achieves its heat-conducting function through multiple heat-conducting parts 212 distributed along the circumference. The first gap area 213 of the adjacent heat-conducting parts 212 provides a reasonable space for the first fluid channel 214. Under the premise of ensuring heat conduction performance, the fluid passage is optimized, taking into account both structural functionality and process reliability.

[0043] In some embodiments, such as Figure 4 As shown in (a), the first fluid channel 214 is a groove provided on the first surface of the focusing ring 211. The groove penetrates the focusing ring 211 radially. The surface of the focusing ring heater 320 near the heat-conducting layer covers the groove to form a complete channel.

[0044] Specifically, the first fluid channel 214 is a semi-channel disposed on the first surface of the focusing ring 211. It is a groove-shaped channel with a single-sided open structure, and only has a partial channel boundary, which cannot independently form a complete fluid flow path. This semi-channel needs to cooperate with the focusing ring heater 320 disposed on the side of the heat-conducting layer away from the focusing ring 211. The upper surface of the focusing ring heater 320 covers its open side to jointly form a complete fluid channel with a closed boundary, so as to realize the directional flow of fluid.

[0045] Of course, in other embodiments, the first fluid channel 214 may also be configured as a complete channel that runs radially through the focusing ring 211; the complete channel extends radially from its inner edge to its outer edge along the focusing ring 211, and has its own closed channel boundary, so that it can independently form a fluid flow path without relying on the cooperation of other components.

[0046] In some embodiments, there are multiple first gap regions 213, which are distributed circumferentially along the focusing ring 211; there are multiple first fluid channels 214, which are distributed circumferentially along the focusing ring 211, and each first gap region 213 has at least one first fluid channel 214.

[0047] The circumferential spacing along the focusing ring 211 can be uniformly distributed at equal central angles or non-uniformly distributed; there is no limitation on this.

[0048] Taking uniform distribution as an example, the heat-conducting layer includes multiple heat-conducting parts 212 distributed sequentially along the circumference of the focusing ring 211. The structural dimensions of each heat-conducting part 212 are consistent, and the central angles corresponding to the circumferential spacing between two adjacent heat-conducting parts 212 are equal. In other words, along the circumferential direction of the focusing ring 211, the angle formed by the line connecting the geometric center of any two adjacent heat-conducting parts 212 to the center of the focusing ring 211 is the same, so that the multiple heat-conducting parts 212 form a uniform and symmetrical distribution on the first surface of the focusing ring 211.

[0049] Since there is a first gap region 213 between adjacent heat-conducting parts 212, and each heat-conducting part 212 is distributed at equal central angle intervals, the first gap region 213 between adjacent heat-conducting parts 212 also exhibits the distribution characteristic of equal central angle intervals in the circumferential direction, that is, the included angle formed by the line connecting the geometric center of any two adjacent first gap regions 213 and the center of the focusing ring 211 is equal.

[0050] Multiple first fluid channels 214 are respectively disposed in the exposed first surface of the focusing ring 211 corresponding to each first gap region 213. Based on the equal central angle interval distribution characteristics of the first gap regions 213, the distribution of each first fluid channel 214 along the circumference of the focusing ring 211 also satisfies that the included angle formed by the line connecting the geometric center of two adjacent first fluid channels 214 and the center of the focusing ring 211 is equal, that is, multiple first fluid channels 214 are arranged at equal central angle intervals along the circumference of the focusing ring 211.

[0051] Through the above-mentioned distribution design, the heat-conducting part 212 can form a uniform heat conduction path on the first surface of the focusing ring 211, avoiding local overheating or uneven heat transfer; at the same time, the uniform distribution of the first fluid channel 214 can make the flow conductors generated by the molecular pump, dry pump, etc. form a uniform action field in the circumference, ensuring that the second gap area 301 between the electrostatic chuck 310 and the focusing ring 211, the gap between the electrostatic chuck 310 and the focusing ring heater 320, and each easily deposited area between the focusing ring 211 and the focusing ring heater 320 can obtain a consistent fluid flushing effect, effectively avoiding polymer residue caused by insufficient local flow field intensity, and further improving the edge ring assembly's ability to suppress polymer deposition in the gap.

[0052] In some embodiments, the focusing ring 211 may be made of monocrystalline silicon or any other suitable material, without limitation.

[0053] In some embodiments, the equivalent capacitance of the focusing ring 211 is equal to the sum of the capacitance of the solid portion of the focusing ring 211 and the capacitance of the first fluid channel 214.

[0054] The "solid portion" refers to the structural portion of the focusing ring 211 other than the first fluid channel 214, formed by the body material (such as single-crystal silicon) constituting the focusing ring 211, that is, the area of ​​the focusing ring 211 that is not hollowed out to form the first fluid channel 214. This solid portion and the first fluid channel 214 (the hollowed-out area) together constitute the complete focusing ring 211, and its capacitance characteristics, together with the capacitance characteristics of the first fluid channel 214, determine the equivalent capacitance of the focusing ring 211.

[0055] Furthermore, the focusing ring 211 includes a first solid region, which refers to the solid structural portion directly surrounding the first fluid channel 214. This first solid region and the first fluid channel 214 it surrounds together constitute a specific region on the focusing ring 211, and their equivalent total capacitance is defined as the first capacitance. The focusing ring 211 also includes a second solid region, which is a continuous solid structure, and its volume is equal to the sum of the volumes of the first solid region and the first fluid channel 214. Since the second solid region is a complete solid structure, its overall dielectric constant is higher than the equivalent dielectric constant of the combination of the first solid region and the first fluid channel 214. Therefore, the second capacitance of the second solid region is greater than the first capacitance.

[0056] Alternatively, it can be said from another perspective that the capacitance of the first fluid channel 214 is less than the capacitance when the first fluid channel 214 is a solid structure.

[0057] Specifically, this application achieves optimized control of the electrical properties of the focusing ring 211 through structural improvements. For example... Figure 5 As shown, compared to the focusing ring 211 with a capacitance value of C in the related technology, the equivalent capacitance of the focusing ring 211 in this application is equal to the sum of the capacitance C1 of the solid part of the focusing ring 211 and the capacitance C2 of the first fluid channel 214. That is, the capacitance value of the first fluid channel 214 is less than the capacitance value when the first fluid channel 214 is a solid structure. This structural improvement significantly reduces the overall capacitance value of the improved focusing ring 211, thereby leading to a corresponding reduction in surface potential (the original surface potential of the focusing ring 211 in the related technology is V, the surface potential of the improved focusing ring 211 is V1, and the surface potential of the first fluid channel 214 is V2). According to the functional relationship between plasma bombardment energy and surface potential, the reduction of surface potential can effectively weaken the bombardment intensity of plasma on the surface of the focusing ring 211, thereby suppressing material sputtering and microstructure damage, significantly extending the service life of the focusing ring 211, and correspondingly reducing the component replacement frequency and maintenance cost in the process, thus achieving effective control of process cost.

[0058] In some embodiments, such as Figure 3 and Figure 4 As shown in (b), the edge ring assembly also includes: A cover ring 220 is disposed around the outer edge of the focusing ring 211. At least one second fluid channel 221 is provided on the surface of the cover ring 220 facing the focusing ring heater 320. The second fluid channel 221 penetrates the cover ring 220 radially. The second fluid channel 221 is connected to at least one first fluid channel 214.

[0059] Specifically, the cover ring 220 has a ring-shaped structure and is arranged around the outer edge of the focusing ring 211, forming a suitable assembly relationship with the focusing ring 211; the second fluid channel 221 is opened on the surface of the cover ring 220 facing the focusing ring heater 320 (i.e. the back side of the cover ring 220), and its extension direction is consistent with the radial direction of the cover ring 220 and passes through the inner and outer edges of the cover ring 220.

[0060] The connection between the second fluid channel 221 and at least one first fluid channel 214 can mean that the positions of each second fluid channel 221 correspond to the positions of each first fluid channel 214, and the two are aligned along the same radial axis to form a continuous fluid passage. That is, the end of the second fluid channel 221 near the focusing ring 211 is connected to the end of the corresponding first fluid channel 214 away from the inner edge of the focusing ring 211, so that the fluid in the first fluid channel 214 can flow smoothly into the second fluid channel 221 through the connection structure, and finally be discharged to the outside of the covering ring 220 through the second fluid channel 221.

[0061] Alternatively, the second fluid channel 221 being connected to at least one first fluid channel 214 can also mean that one second fluid channel 221 is connected to multiple first fluid channels 214, and the fluid in the multiple first fluid channels 214 can be discharged to the outside of the cover ring 220 through this one second fluid channel 221.

[0062] By configuring the cover ring 220 and the second fluid channel 221, the effective length of the fluid flow path can be extended. This allows polymer particles or process gases exiting from the first fluid channel 214 to migrate directionally to the outer region of the cover ring 220 under the guidance of the second fluid channel 221, reducing the risk of polymer deposition at the junction of the focusing ring 211 and the cover ring 220. Simultaneously, the aligned and interconnected structural design ensures the continuity of the flow within the channel, avoiding flow field attenuation caused by path bends or misalignments, and guaranteeing the overall operational stability of the fluid system.

[0063] In some embodiments, the cross-sectional area of ​​the first fluid channel 214 and the cross-sectional area of ​​the second fluid channel 221 may be the same or different, and this is not limited. For example, the cross-sectional area of ​​the second fluid channel 221 is greater than or the sum of the cross-sectional areas of all the connected first fluid channels 214, so that the second fluid channel 221 is in communication with at least one first fluid channel 214.

[0064] According to another aspect of this application, a semiconductor device is provided. The semiconductor device includes a process chamber, an electrostatic chuck 310 and a focusing ring heater 320 disposed within the process chamber, and an edge ring assembly.

[0065] The edge ring assembly is disposed on the focusing ring heater 320. The focusing ring 211 of the edge ring assembly surrounds the outer edge of the electrostatic chuck 310 and is spaced apart from the electrostatic chuck 310. A second gap region 301 is defined between the electrostatic chuck 310, the focusing ring heater 320 and the focusing ring 211 of the edge ring assembly.

[0066] Among them, the edge ring component can be implemented as the edge ring component of the semiconductor device mentioned above, which can be referred to in the above introduction and will not be repeated here.

[0067] In semiconductor equipment, the electrostatic chuck 310 is used to support the wafer. It generates electrostatic adsorption force through the Coulomb force between opposite charges, and stably adsorbs the wafer onto its surface to ensure that the wafer is accurately positioned during the process (such as plasma etching).

[0068] The focusing ring 211 is disposed around the outer edge of the electrostatic chuck 310 and also around the periphery of the wafer, with a gap between the focusing ring 211 and the electrostatic chuck 310. In addition, the focusing ring 211 is disposed on the focusing ring heater 320, and a second gap region 301 is provided between the three.

[0069] In some embodiments, the semiconductor equipment may specifically be a plasma processing device, such as a plasma etching device, a plasma-enhanced chemical vapor deposition (PECVD) device, a plasma-enhanced atomic layer deposition (ALD) device, or a reactive ion etching (RIE) device, etc., without limitation. All of the above devices have a process chamber, which is equipped with components such as an electrostatic chuck 310, a focusing ring heater 320, and an edge ring assembly. A second gap region 301 is typically present between the electrostatic chuck 310, the focusing ring heater 320, and the edge ring assembly. During plasma or gas-phase reaction processes, byproducts such as polymers are easily generated and remain in the second gap region 301. The first fluid channel 214 of the edge ring assembly can effectively reduce polymer residue in the second gap region 301, improving process reliability and increasing product yield.

[0070] In some embodiments, the semiconductor device further includes a fluid drive device for generating a flow conduction acting on the second gap region 301.

[0071] The fluid drive device may include a vacuum pump, specifically including but not limited to molecular pumps, dry pumps, and other devices capable of generating pressure differentials or pneumatic power, forming a directional flow field: gas and any polymers present in the second gap region are guided by the flow to enter the first fluid channel 214 near the inner edge of the focusing ring 211, and flow along the interior of the first fluid channel 214 away from the inner edge of the focusing ring 211, ultimately being carried out through the first fluid channel 214 to the outside of the process chamber. Through the synergy of this fluid drive device and the first fluid channel 214, the directional discharge of residual polymers in the second gap region can be achieved, reducing equipment downtime caused by polymer-released particulate matter and minimizing product defects, thereby improving process reliability and increasing product yield.

[0072] In summary, the semiconductor device and its edge ring assembly according to the embodiments of this application, by providing a first fluid channel in the first surface exposed area of ​​the focusing ring corresponding to the first gap region, and the first fluid channel penetrating the focusing ring radially, and by configuring the edge ring assembly such that one end of the first fluid channel is connected to the second gap region between the electrostatic chuck, the focusing ring heater and the focusing ring, can use the first fluid channel to promptly discharge the incompletely deposited polymer that is prone to remain in the second gap region during the initial operation of the process chamber and the end of the preventive maintenance cycle, thereby reducing the amount of polymer residue in this region, and thus avoiding polymer release particles falling on the wafer edge during the process execution stage, reducing equipment uptime loss and the risk of product defects, effectively improving process reliability and increasing product yield.

[0073] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0074] Similarly, it should be understood that, in order to simplify this application and aid in understanding one or more aspects of the application, various features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the point of application is that the corresponding technical problem can be solved with fewer features than all of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0075] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0076] It should be noted that the above embodiments are illustrative of this application and not limiting of it, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

Claims

1. An edge ring assembly for use in a semiconductor device, the semiconductor device including an electrostatic chuck and a focusing ring heater disposed close together, characterized in that, The edge ring assembly includes: Focusing ring; A heat-conducting layer is disposed on the first surface of the focusing ring, including a plurality of heat-conducting portions distributed along the circumference of the focusing ring, and at least a first gap region is formed between adjacent heat-conducting portions, the first gap region exposing a portion of the first surface of the focusing ring; The focusing ring is provided with at least one first fluid channel, which is opened in the first surface exposed area of ​​the focusing ring corresponding to the first gap area, and the first fluid channel penetrates the focusing ring radially. The edge ring component is configured as follows: The first surface of the focusing ring is disposed on the focusing ring heater through the heat-conducting layer. The focusing ring surrounds the outer edge of the electrostatic chuck and is spaced apart from the electrostatic chuck. A second gap region is defined between the focusing ring heater, the focusing ring, and the electrostatic chuck. The first fluid channel communicates with the second gap region.

2. The edge ring assembly according to claim 1, characterized in that, The first fluid channel is a groove disposed on the first surface of the focusing ring, and the groove penetrates the focusing ring radially.

3. The edge ring assembly according to claim 1, characterized in that, The number of the first gap regions is multiple, and the multiple first gap regions are distributed at intervals along the circumference of the focusing ring; The number of the first fluid channels is multiple, and the multiple first fluid channels are distributed at intervals along the circumference of the focusing ring, with at least one first fluid channel opened in each first gap region.

4. The edge ring assembly according to claim 3, characterized in that, The plurality of first gap regions are distributed at equal central angle intervals along the circumference of the focusing ring, and the plurality of first fluid channels are distributed at equal central angle intervals along the circumference of the focusing ring.

5. The edge ring assembly according to any one of claims 1-4, characterized in that, Also includes: A cover ring is provided around the outer edge of the focusing ring, and at least one second fluid channel is provided on the surface of the cover ring facing the focusing ring heater, the second fluid channel penetrating the cover ring radially; The second fluid channel is connected to at least one of the first fluid channels.

6. The edge ring assembly according to claim 5, characterized in that, The cross-sectional area of ​​the second fluid channel is greater than or equal to the sum of the cross-sectional areas of all the connected first fluid channels.

7. The edge ring assembly according to claim 1, characterized in that, The focusing ring includes a first solid region that encloses the first fluid channel, and the equivalent total capacitance of the first solid region and the first fluid channel is a first capacitance; the focusing ring also includes a second solid region, the volume of which is equal to the sum of the volume of the first solid region and the volume of the first fluid channel, and the capacitance of the second solid region is a second capacitance, which is greater than the first capacitance.

8. The edge ring assembly according to claim 1, characterized in that, The focusing ring is made of monocrystalline silicon.

9. A semiconductor device, characterized in that, include: Process chambers; Electrostatic chucks and focusing ring heaters are installed in the process chamber; The edge ring assembly as described in any one of claims 1 to 8, wherein the edge ring assembly is disposed on the focusing ring heater, the focusing ring of the edge ring assembly surrounds the outer edge of the electrostatic chuck and is spaced apart from the electrostatic chuck, and the second gap region is defined between the electrostatic chuck, the focusing ring heater and the focusing ring of the edge ring assembly.

10. The semiconductor device as claimed in claim 9, characterized in that, The semiconductor device further includes a fluid drive device for generating a flow conduction acting on the second gap region.

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