Plasma Enhanced Atomic Layer Deposition Device
CN309057564SActive Publication Date: 2025-01-07ATOMIC NANO MATERIALS (NAN JING) CO LTD
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Patent Information
- Application Number
- CN202430152657.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-22
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2039-03-22
Smart Images
Figure 000007_ABST
Abstract
1. The name of the product of this design: plasma enhanced atomic layer deposition device. 2. Purpose of the product of this design: to perform thin film deposition reaction on wafers by plasma enhancement. 3. The design key point of this appearance design product lies in the overall shape of the product. 4. The picture or photo that best illustrates the design points: three-dimensional picture.
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