Silicon Carbide Epitaxial Growth Equipment
CN309106980SActive Publication Date: 2025-02-1148TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Patent Information
- Application Number
- CN202430332664.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-31
- Publication Date
- 2025-02-11
- Estimated Expiration
- 2039-05-31
Smart Images
Figure 000007_ABST
Abstract
1. The name of the product of this design: Silicon carbide epitaxial growth equipment. 2. Purpose of this design product: used for homoepitaxial growth of 6‑8 inch 4H‑silicon carbide material. 3. The design key point of this appearance design product lies in the shape. 4. The picture or photo that best illustrates the design points: Stereoscopic diagram 1.
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