Power semiconductor device and power conversion system using the same

Abstract

Power semiconductor module (MJ1) applied to a multi-level converter circuit having three or more voltage waveform stages, wherein a first IGBT (T1), a diode (D2), and a second IGBT (T4) with reverse blocking voltage are housed in a housing, the housing has a first external input terminal (P) connected to a collector of the first IGBT (T1), a second external input terminal (M) connected to a collector of the second IGBT (T4), a third external input terminal (N) connected to an anode of the diode (D2), and an external output terminal (U), and the cathode of the diode (D2) and the external output terminal (U) are connected to the junction point connecting the emitter of the first IGBT (T1) and the emitter of the second IGBT (T4).

Description

BACKGROUND OF THE INVENTION1. Technical FieldThe present invention relates to a power semiconductor module applied to a multistage power conversion system having three stages or more, and a power conversion system applied to the module.2. Related ArtFIG. 11 shows an example of a circuit of a three-stage inverter, which is a power conversion circuit that converts from a direct current to an alternating current. In a DC power source in which C 1 and C 2 are connected in series (a capacitor having large capacitance may be used instead), a positive-side potential is Cp, a negative-side potential is Cn, and intermediate point potentials are Cm (Cm 1 and Cm 2). In general, when the DC power source is configured from an AC power source system, it can be configured by using a rectifier, a large-capacity electrolytic capacitor, or the like.Reference numerals 3 and 4 denote an IGBT and an upper arm diode connected to the positive side potential Cp, reference numerals 5 and 6 denote an IGBT and a lower arm diode connected to the negative side potential Cn, and the upper arm and the lower arm are connected in series to configure a single-phase arm. A three-phase circuit is configured of three-phase arms. Also, reference numerals 7, 8, 9, and 10 denote elements configuring a bidirectional switch connected between the DC power supply intermediate point potential Cm (Cm1and Cm2) and an AC output terminal 11, where 7 and 8 denote IGBTs, and 9 and 10 denote diodes. The bidirectional switch shown in FIG. 11 is of a configuration in which IGBTs with which a diode is connected in antiparallel are connected in antiseries, and is applied to each phase. In the drawing, the IGBT 7 and the IGBT 8 are antiseries-connected to a common emitter, but the switch may be realized with a common collector configuration or, as shown in FIG. 13B, with a configuration in which the IGBTs 12 and 13 are anti-parallel-connected to reverse bias voltage.Lo stands for a filter reactor and 2 denotes a load of the system. By adopting this circuit configuration, it is possible to output the DC power source positive side potential Cp, the negative side potential Cn, and the intermediate point potential Cm to the output terminal 11. That is, the circuit is a three-stage inverter circuit that outputs three voltage waveform stages. FIG. 12 shows an example of an output voltage (V aus)- waveform. Since a characteristic is that there are less low-order harmonic components (close to a sine waveform) than in a two-stage inverter, it is possible to miniaturize the output filter reactor Lo.FIG. 14 also shows a dual converter type of power conversion system configured of a PWM converter (CONV) that converts alternating current into direct current and a PWM inverter (INV) that converts direct current into alternating current. A configuration is such that a stable AC voltage is generated with a three-phase AC power source 1 as input through an input filter reactor Li, the three-phase three-stage PWM converter CONV, the large-capacity series-connected capacitors C 1 and C 2, the three-phase three-stage PWM inverter INV, and an output filter Lo, and AC power is supplied to a load 2.An example of a case of configuring the three-stage converter (converter or inverter) with a dedicated IGBT module is shown in JP 2008-193 779 A. FIG. 15B is an exterior structural view of the module, and FIG. 15A is an example of an internal circuit. Reference numerals 24, 25, 26 and 27 each denote a terminal P connected to the potential Cp, a terminal M connected to the potential Cm, a terminal N connected to the potential Cn, and an AC output terminal U. It is possible to configure a three-phase inverter by using three of these modules, and if an even larger capacity is desired, it can be realized by connecting the modules in parallel.FIG. 16 shows an equivalent circuit described focusing on internal wire inductors (L 1 to L 5) of the module of FIGS. 15A and 16B. Each inductor is formed mainly by the wires between the module output terminal and semiconductor chips and between the semiconductor chips. Since each wire is normally about a few centimeters long, each inductance value is about 10 nH.FIG. 17 is a circuit diagram for illustrating the problem. In FIG. 17, when an IGBT T 1 is in an on state, a current I flows along the path (a path passing from a capacitor C 1 to a reactor Lo through an inductor L 1, the IGBT T 1, and an inductor L 3) shown by the dotted line. Next, when the IGBT T 1 is turned off, an IGBT T 4 turned on in advance has continuity, and the current of the reactor Lo is transmitted to a current path 28 that passes from the reactor Lo through an inductor L 2 and the IGBT T 4 to the reactor Lo. At this time, a voltage is temporarily generated in the directions of the arrows in the drawing in the inductors L 1, L 2, and L 3 in accordance with an IGBT current change speed (di / dt).As a result, if a wire inductance of external wires is ignored, a maximum of the voltage shown in Equation 1 is applied between the collector and emitter of the IGBT T 1. FIG. 18 shows waveforms of a collector current (ic) and a voltage between the collector and emitter (V CE), when the IGBT T 1 is turned off. Edp: DC voltage of the DC power source 1 di / dt: IGBT current change speed when IGBT is turned off L1+L2+L3: wire inductance valueIn the case of an IGBT in the 100-Ampere class, since its di / dt is a maximum of about 2,000 A / μs, as an example, the surge amount is (L 1+L 2+L 3)·di / dt according to Equation 160 V when L 1+L 2+L 3=30 nH.As a result, due to the presence of L 1, L 2, L 3, L 4, and L 5, the value of the peak voltage applied to the IGBT when the IGBT is turned off with respect to the DC voltage Edp increases by the amount of the surge voltage in Equation 2, which means that the IGBT chip and the chip connected in parallel therewith must be high rated voltage chips. Normally, a high rated voltage chip is such that the chip area roughly increases relative to the rated voltage, which means that the modulus becomes larger and the cost increases.In particular, when an increase in module current (an increase in capacitance) is sought, the volume of the module increases, which means that the length of the wiring in the module inevitably increases. Since di / dt also increases when switching in approximate proportion to the current value, the surge voltage ΔV according to Equation 2 also increases exponentially with respect to an increase in the rated current of the module. For this reason, there is a limitation in achieving an increase in capacitance in a module. Meanwhile, although an increase in capacitance is routinely performed by connecting modules in parallel, it is necessary to consider the increase in cost compared to configuring with a module and the imbalance in current between the parallel circuits, which means that there is a problem in that the parallel circuit needs to be placed under load during the design.US 2010 / 0 039 843 A1 relates to a series circuit, wherein IGBTs and an alternating current switch are contained in a housing. The series circuit is connected between the poles of a DC power source and the AC switch between a neutral point of the DC power source and a series connection point between the IGBTs. Rectilinear bus bars are used to connect the terminals on the housing to the DC power source.US 2009 / 0 251 858 A1 relates to an electric power converter having a main circuit portion including a semiconductor module and a cooling device. A substrate portion of a control circuit is electrically connected to a signal terminal of the semiconductor module, and a portion of the power wiring is connected to a main electrode terminal of the semiconductor module. The main circuit portion is disposed between a substrate portion of the control circuit and the portion of the power wiring.SUMMARY OF THE INVENTIONIn order to solve the above-described problems, according to a first aspect of the invention, with a power semiconductor module such as an IGBT applied to a multistage converter circuit having three or more voltage waveform stages, a first IGBT, a diode whose cathode is connected to the emitter of the first IGBT, and a second reverse blocking voltage IGBT whose emitter is connected to the emitter of the first IGBT are housed in a case, and each of the collector of the first IGBT, the collector of the second IGBT, the connection point of the emitter of the first IGBT and the emitter of the second IGBT, and the anode of the diode is an external terminal.According to a second aspect of the invention, with the power semiconductor module according to the first aspect of the invention, the collector of the first IGBT is preferably a terminal P connected to the positive electrode of a DC power source, the collector of the second IGBT is preferably a terminal M connected to an intermediate point of the DC power source, the connection point of the emitter of the first IGBT and the emitter of the second IGBT is preferably an output terminal U, the anode of the diode is a terminal N connected to the negative electrode of the DC power source, and the terminal arrangement is preferably arranged in a linear form in the order of the terminal P, the terminal M, the terminal N, and the terminal U.According to a third aspect of the invention, with a power semiconductor module such as an IGBT applied to a multistage converter circuit having three or more voltage waveform stages, a first IGBT, a diode whose anode is connected to the collector of the first IGBT, and a second reverse blocking voltage IGBT whose collector is connected to the collector of the first IGBT are housed in a case, and each of the emitter of the first IGBT, the emitter of the second IGBT, the connection point of the collector of the first IGBT and the collector of the second IGBT, and the cathode of the diode is an external terminal.According to a fourth aspect of the invention, with the power semiconductor module according to the third aspect of the invention, the emitter of the first IGBT is preferably a terminal N connected to the negative electrode of a DC power source, the emitter of the second IGBT is preferably a terminal M connected to an intermediate point of the DC power source, the connection point of the collector of the first IGBT and the collector of the second IGBT is preferably an output terminal U, the cathode of the diode is preferably a terminal P connected to the positive electrode of the DC power source, and the terminal arrangement is preferably arranged in a linear form in the order of terminal P, terminal M, terminal N, and terminal U.According to a fifth aspect of the invention, with a power semiconductor module such as an IGBT applied to a multistage converter circuit having three or more voltage waveform stages, a first IGBT, a diode whose cathode is connected to the emitter of the first IGBT, and a series circuit of a second diode and a second IGBT whose one end is connected to the emitter of the first IGBT are housed in a case, and each of the collector of the first IGBT, the other end of the series circuit, the connection point of the emitter of the first IGBT, and the one end of the series circuit, and the anode of the first diode is an external terminal.According to a sixth aspect of the invention, with the power semiconductor module according to the fifth aspect of the invention, the collector of the first IGBT is preferably a terminal P connected to the positive electrode of a DC power source, the other end of the series circuit is preferably a terminal M connected to an intermediate point of the DC power source, the connection point of the emitter of the first IGBT and the one end of the series circuit is preferably an output terminal U, the anode of the first diode is preferably a terminal N connected to the negative electrode of the DC power source, and the terminal arrangement is preferably arranged in a linear form in the order of the terminal P, the terminal M, the terminal N, and the terminal U.According to a seventh aspect of the invention, with a power semiconductor module such as an IGBT applied to a multistage converter circuit having three or more voltage waveform stages, a first IGBT, a first diode whose anode is connected to the collector of the first IGBT, and a series circuit of a second diode and a second IGBT whose one end is connected to the collector of the first IGBT are housed in a case, and each of the emitter of the first IGBT, the other end of the series circuit, the connection point of the emitter of the first IGBT and the series circuit, and the cathode of the first diode is an external terminal.According to an eighth aspect of the invention, with the power semiconductor module according to the seventh aspect of the invention, the emitter of the first IGBT is preferably a terminal N connected to the negative electrode of a DC power source, the other end of the series circuit is preferably a terminal M connected to an intermediate point of the DC power source, the connection point of the collector of the first IGBT and the one end of the series circuit is preferably an output terminal U, the cathode of the first diode is preferably a terminal P connected to the positive electrode of the DC power source, and the terminal arrangement is preferably arranged in a linear form in the order of the terminal P, the terminal M, the terminal N, and the terminal U.According to a ninth aspect of the invention, in a multistage power conversion circuit having three or more voltage waveform stages, the terminal arrangement of the power semiconductor module according to the second aspect of the invention and the terminal arrangement of the power semiconductor module according to the fourth aspect of the invention are preferably parallel to each other by arranging the two semiconductor power modules side by side.According to a tenth aspect of the invention, in a multistage power converter circuit having three or more voltage waveform stages, the terminal arrangement of the power semiconductor module according to the sixth aspect of the invention and the terminal arrangement of the power semiconductor module according to the eighth aspect of the invention are preferably parallel to each other by arranging the two semiconductor power modules side by side.According to the invention, with a power semiconductor module that is used in a multi-stage converter circuit having three or more stages, it is possible to transmit current without flowing through an external wire by configuring the chips inside the module with a circuit concentrated on commutation operation. As a result, it is possible to make the rated current approximately twice as large as compared with a previously known module having the same volume with hardly any change in the value of the wire inductance within the module, and it is possible to limit a cost increase even if there is an increase in the capacity.By applying the modules of the invention to a power conversion system that converts from an alternating current to a direct current or from a direct current to an alternating current, it is possible to reduce the surge voltage at the time of switching. Further, when the modules are applied in a multiple parallel circuit, it is possible to reduce current reduction in design. As a result, small, inexpensive power semiconductor modules, reduction in the number of wires in a conversion system, miniaturization of the system, and reduction in cost are possible.Features, components, and specific details of the structures of the above-described aspects may be interchanged or combined to form other aspects that are optimized for the particular application. As such modifications are readily apparent to one skilled in the art, for the sake of brevity and brevity of description herein, they are intended to be implicitly disclosed by the above description without explicitly specifying any possible combination.BRIEF DESCRIPTION OF THE DRAWINGSFIG. 1 is a circuit configuration diagram showing a first operative example of the invention; FIG. 2 is a circuit configuration diagram showing a second operative example of the invention; FIG. 3 is a circuit configuration diagram showing a third functional example of the invention; FIG. 4 is a circuit configuration diagram showing a fourth functional example of the invention; FIG. 5 is a circuit configuration diagram of a phase of a three-phase converter circuit; FIG. 6 is an example of a three-stage converter circuit module; FIG. 7 shows a wiring configuration example of modules and capacitors (single phase); FIGS. 8A to 8C are operation diagrams showing a first commutation operation of a current while an inverter is operating; FIGS. 9A to 9C are operation diagrams showing a second commutation operation of the current while the inverter is operating; FIG. 10 is a circuit diagram showing an example of application to a five-stage inverter circuit; FIG. 11 is a main circuit configuration diagram of a three-stage inverter; FIG. 12 shows an example of a three-stage inverter output voltage waveform; FIGS. 13A and 13B are examples of a configuration of a bidirectional switch; FIG. 14 is a main circuit configuration diagram of a double converter (converter+inverter); FIGS. 15A and 15B are an example of a three-stage converter circuit module already known; FIG. 16 is an inner equivalent circuit diagram of the prior art three-stage converter circuit module; FIG. 17 is a circuit diagram for illustrating a problem already known; and FIG. 18 is an example of current and voltage waveforms when an IGBT is turned off.DETAILED DESCRIPTION OF THE EMBODIMENTThe essence of the invention resides in the configuration of a phase of a converter circuit having three or more stages by combining two kinds of power semiconductor modules including one of the upper and lower arm IGBTs, the other diode, and one of the elements configuring the bidirectional switch as power semiconductor modules configuring a phase of a converter circuit of three stages or more, wherein a bidirectional switch is connected between a series connection point of an upper and lower arm IGBT series circuit and a DC power source intermediate point.Functional Example 1Figures 1 and 2 show a first functional example of the invention. In FIGS. 1 and 2 corresponding to the first and second aspects and the third and fourth aspects of the invention, respectively, a semiconductor element connected to a potential Cm of a DC power source is an IGBT having a reverse blocking voltage, and the shape of the module is the external structure shown in FIG. 6. FIGS. 5 and 7 are an operable example when the modules are applied to a three-stage inverter (a converter from a direct current to an alternating current).A module MJ 1 of FIG. 1, which includes an IGBT T 1 whose collector is connected to the positive electrode of a DC power source, a diode D 2 whose anode is connected to the negative electrode of the DC power source, and a bidirectional switch reverse blocking type IGBT T 4, is of a configuration in which the IGBT T 1 collector is connected to a terminal P, the reverse blocking type IGBT T 4 collector is connected to a terminal M, and a connection point of the reverse blocking type IGBT T 4 emitter, the IGBT T 1 emitter, and the diode D 2 is connected to a terminal U.A module MJ 2 of FIG. 2 including an IGBT T 2 whose emitter is connected to the negative electrode of a DC power source, a diode D 1 whose cathode is connected to the positive electrode of the DC power source, and a bidirectional switch reverse blocking type IGBT T 3 is of a configuration in which the IGBT T 2 emitter is connected to a terminal N, the reverse blocking type IGBT T 3 emitter is connected to a terminal M, and a connection point of the IGBT T 2 collector, the reverse blocking type IGBT T 3 collector, and the diode D 1 anode is connected to a terminal U.FIG. 5 is a circuit diagram in which a circuit of one phase of a three-stage inverter is configured using the modules MJ 1 and MJ 2. The circuit of one phase of the three-stage inverter is configured by connecting the terminals P, the terminals N, and the terminals U of each module to each other.FIG. 6 shows an external view of the modules MJ 1 and MJ 2. Also, FIG. 7 shows an example of a configuration view in which the modules MJ 1 and MJ 2 are connected by conductors to a capacitor series circuit serving as a DC power source. The capacitors C 11 and C 12 and the capacitors C 21 and C 22 are connected in parallel and further connected in series, configuring the DC power source.The modules are arranged side by side so that the terminal arrangements of the modules are parallel to each other, the terminal P of each module and the positive-side potentials Cp of the parallel-connected capacitors C 11 and C 12 are connected by a conductor A, the terminal M of each module, intermediate-point potentials Cm 1 of the parallel-connected capacitors C 11 and C 12 and intermediate-point potentials Cm 2 of the capacitors C 21 and C 22 are connected by a conductor B, and the terminal N of each module and negative-side potentials Cn of the parallel-connected capacitors C 21 and C 22 are connected by a conductor C.Also, the terminal U of each module is connected by a conductor D, thereby forming an AC terminal.By arranging the modules MJ 1 and MJ 2 side by side so that the terminal arrangements are parallel to each other as described above, it is possible to bring the terminals P, M, N, and U of each module close to each other. As a result, it is easily possible to adopt the adoption of a parallel flat plate structure with the aim of shortening the wiring between the capacitors and modules as shown in Fig. 7 and reducing the wire inductance.By using three of this configuration, it is possible to configure a three-phase three-stage inverter or three-phase three-stage converter.FIGS. 8A to 8C show an example of a commutation operation mode 1 of the current while the inverter is operating. This is a process when the current flows from the DC power source to the load side (reactor Lo side). When the IGBT T 1 is turned off from the state of FIG. 8A, the current is transferred to the IGBT T 4 side as shown in FIG. 8B, and when the IGBT T 1 is turned on from the state of FIG. 8B, the current is also transferred to the IGBT T 1 side as shown in FIG. 8A.Meanwhile, when the IGBTT 4 is turned off from the state of FIG. 8B, the current is transmitted to the diode D 2 side as shown in FIG. 8C. When the IGBT T 4 is turned on from the state of FIG. 8C, the current is also transmitted to the IGBT T 4 side as shown in FIG. 8B.FIGS. 9A to 9C show an example of a commutation operation mode 2 of the current while the inverter is operating. This is a process when the current flows from the load side (reactor Lo side) to the DC power source. When the IGBT T 2 is turned off from the state of FIG. 9A, the current is transferred to the IGBT T 3 side as shown in FIG. 9B, and when the IGBT T 2 is turned on from the state of FIG. 9B, the current is also transferred to the IGBT T 2 side as shown in FIG. 9A.Meanwhile, when the IGBT T 3 is turned off from the state of FIG. 9B, the current is transmitted to the diode D 1 side as shown in FIG. 9C. When the IGBT T 3 is turned on from the state of FIG. 9C, the current is also transmitted to the IGBT T 3 side as shown in FIG. 9B.As described above, in the case of the module MJ 1 of FIG. 1, since the IGBT T 1, T 4 or the diode D 2 has continuity with the output current polarity shown in FIGS. 8A to 8C, it is possible that the current is transmitted without flowing through an external wire. Since the IGBT T 2, T 3 or the diode D 1 has continuity with the output current polarity shown in FIGS. 9A to 9C, in the case of the module MJ 2 of FIG. 2, it is also possible that the current is transmitted without flowing through an external wire.Functional Example 2Figures 3 and 4 show a second operative example of the invention. The difference from the first operable example is that a series circuit of a diode and an IGBT having a reverse blocking voltage is used as the bidirectional switch element connected to the intermediate point potential Cm (Cm 1 and Cm 2) of the DC power source.A module MJ 3 shown in FIG. 3 is of a configuration in which a series circuit of a diode D 4 and an IGBT T 4 ais used instead of the reverse blocking voltage IGBT T 4 of the module 1 in the functional example 1, and a module MJ 4 shown in FIG. 4 is of a configuration in which a series circuit of a diode D 3 and an IGBT T 3 ais used instead of the reverse blocking voltage IGBT T 3 of the module 2. Here, the series connection order of the diode D 4 and the IGBT T 4 a, and the series connection order of the diode D 3 and the IGBT T 3 acan be reversed. The main circuit configuration and the main circuit operation are also the same as those of the first operable example.In the operable examples, an example of application is shown to an inverter circuit that generates an alternating current from a direct current, but the same applies to application to a converter (PWM rectifier) circuit that generates a direct current from an alternating current.Functional Example 3Fig. 10 shows a third operative example of the invention. It is an example of application to a five-stage power converter circuit. It is a configuration of a phase of a five-stage converter in which the capacitors C 1 to C 4 as a direct current power source are connected in series, five potentials having the highest potential at Cp and the lowest potential at Cn are established, and each potential is supplied to the load side via a reactor Lo in a circuit. Since it is the three-stage inverter configuration shown in FIG. 7 made into a five-stage configuration, it is possible to apply the power semiconductor modules of the invention in the same manner as in the three-stage inverter circuit. It is possible to freely change the stage by changing the number of series-connected capacitors and the circuit.In the configuration of FIG. 10, the highest potential Cp, the lowest potential Cn, and the intermediate potentials (Cm 3 and Cm 4) are output to the reactor Lo using the power semiconductor module MJ 1 shown in FIG. 1 and the power semiconductor module MJ 2 shown in FIG. 2, the second highest potentials (Cm 5 and Cm 6) are output to the reactor Lo through a bidirectional switch BDS 2, and the fourth highest potentials (Cm 1 and Cm 2) are output to the reactor Lo through a bidirectional switch BDS 1. The same effect as in the three-stage converter circuit is obtained by arranging the modules MJ1 and MJ2 side by side.In the same manner as in the three-stage inverter and converter, it is also possible to use the modules MJ3 and MJ4 instead of the modules MJ1 and MJ2.Assuming that it is of a configuration in which a divided DC power source and a series circuit of two semiconductor switches connected between the DC power sources are used and a bidirectional switch is connected between the semiconductor switch series connection point and the DC power source division point, the invention can be realized with either a converter or an inverter.The invention, which is a proposal for a power semiconductor module that can be applied to a converter circuit of three stages or more, and for a converter circuit to which the module is applied, can be applied to a seamless power supply system, a motor drive system, a grid connection system, and the like.Features, components, and specific details of the structures of the aspects and operable examples described above may be interchanged or combined to form further aspects that are optimized for the particular application. As such modifications are readily apparent to one skilled in the art, for the sake of brevity and brevity of description herein, they are intended to be implicitly disclosed by the above description without explicitly specifying any possible combination.

Claims

A power semiconductor module (MJ1) applied to a multistage converter circuit having three or more voltage waveform stages, wherein a first IGBT (T1), a diode (D2), and a second reverse blocking voltage IGBT (T4) are housed in a case, the case has a first external input terminal (P) connected to a collector of the first IGBT (T1), a second external input terminal (M) connected to a collector of the second IGBT (T4), a third external input terminal (N) connected to an anode of the diode (D2), and an external output terminal (U), and the cathode of the diode (D2) and the external output terminal (U) are connected to the connection point, connecting the emitter of the first IGBT (T 1) and the emitter of the second IGBT (T 4).The power semiconductor module (MJ1) according to claim 1, wherein the first external input terminal (P) is connected to the positive electrode of a DC power source, the second external input terminal (M) is connected to an intermediate point of the DC power source, the third external input terminal (N) is connected to the negative electrode of the DC power source, and the terminal array is arranged in linear form in the order of terminal P, terminal M, terminal N, and terminal U.A power semiconductor module (MJ2) applied to a multistage converter circuit having three or more voltage waveform stages, wherein a first IGBT (T2), a diode (D1), and a second reverse blocking voltage IGBT (T3) are housed in a case, the case has a first external output terminal (N) connected to an emitter of the first IGBT (T2), a second external output terminal (M) connected to an emitter of the second IGBT (T3), a third external output terminal (P) connected to an anode of the diode (D1), and an external input terminal (U), and the anode of the diode (D1) and the external input terminal (U) are connected to the connection point, connecting the collector of the first IGBT (T 2) and the collector of the second IGBT (T 3).The power semiconductor module (MJ2) according to claim 3, wherein the first external output terminal (N) is connected to the negative electrode of a DC power source, the second external output terminal (M) is connected to an intermediate point of the DC power source, the third output terminal (P) is connected to the positive electrode of the DC power source, and the terminal array is arranged in linear form in the order of terminal P, terminal M, terminal N, and terminal U.A power semiconductor module (MJ3) applied to a multistage converter circuit having three or more voltage waveform stages, wherein a first IGBT (T1), a first diode (D2), and a series circuit of a second diode (D4) and a second IGBT (T4a) are housed in a case, the case has a first external input terminal (P) connected to a collector of the first IGBT (T1), a second external input terminal (M) connected to an end of the series circuit (D4, T4a), a third external input terminal (N) connected to an anode of the diode (D2), and an external output terminal (U), and the cathode of the diode (D 2) and the external output terminal (U) are connected to the connection point connecting the emitter of the first IGBT (T 1) and the one end of the series circuit (D 4, T 4 a).The power semiconductor module (MJ3) according to claim 5, wherein the first external input terminal (P) is connected to the positive electrode of a DC power source, the second external input terminal (M) is connected to an intermediate point of the DC power source, the third external input terminal (N) is connected to the negative electrode of the DC power source, and the terminal array is arranged in linear form in the order of terminal P, terminal M, terminal N, and terminal U.A power semiconductor module (MJ4) applied to a multistage converter circuit having three or more voltage waveform stages, wherein a first IGBT (T2), a first diode (D1), and a series circuit of a second diode (D3) and a second IGBT (T3a) are housed in a case, the case has a first external output terminal (N) connected to an emitter of the first IGBT (T2), a second external output terminal (M) connected to an end of the series circuit (D3, T3a), a third external output terminal (P) connected to an anode of the diode (D1), and an external input terminal (U), and the cathode of the diode (D1) and the external input terminal (U) are connected to the connection point connecting the emitter of the first IGBT (T2) and the other end of the series circuit (D3, T3a).The power semiconductor module (MJ4) according to claim 7, wherein the first external output terminal (N) is connected to the negative electrode of a DC power source, the second external output terminal (M) is connected to an intermediate point of the DC power source, the third external output terminal (P) is connected to the positive electrode of the DC power source, and the terminal array is arranged in linear form in the order of terminal P, terminal M, terminal N, and terminal U.A power conversion system comprising: the first power semiconductor module (MJ1) according to claim 2, wherein the first external input terminal (P), the second external input terminal (M), the third external input terminal (N), and the external output terminal (U) are arranged in this order from one short side of the package to the other short side, the second power semiconductor module (MJ2) according to claim 4, wherein the third external output terminal (P), the second external output terminal (M), the first external output terminal (N), and the external input terminal (U) are arranged in this order from one short side of the package to the other short side, wherein the third external output terminal (P) is arranged adjacent to the external input terminal (P) of the first power semiconductor module (MJ1), and the external input terminal (U) is disposed adjacent to the external output terminal (U) of the first power semiconductor module (MJ 1), first capacitors (C 11, C 12) and second capacitors (C 21, C 22) each of which is disposed adjacent to the respective short sides of the first power semiconductor module (MJ 1) and the second power semiconductor module (MJ 2), a first conductor (A) connecting the first external input terminal (P) of the first power semiconductor module (MJ 1), the third external output terminal (P) of the second power semiconductor module (MJ 2), and positive-side potentials of the first capacitors (C 11, C 12), a second conductor (B), connecting the second external input terminal (M) of the first power semiconductor module (MJ 1), the second external output terminal (M) of the second power semiconductor module (MJ 2), intermediate potentials (Cm 1) of the first capacitors (C 11, C 12), and intermediate potentials (Cm 2) of the second capacitors (C 21, C 22), a third conductor (C) connecting the third external input terminal (N) of the first power semiconductor module (MJ 1), the first external output terminal (N) of the second power semiconductor module (MJ 2), and negative-side potentials of the second capacitors (C 21, C 22).A power conversion system comprising: the first power semiconductor module (MJ3) according to claim 6, wherein the first external input terminal (P), the second external input terminal (M), the third external input terminal (N), and the external output terminal (U) are arranged in this order from one short side of the package to the other short side, the second power semiconductor module (MJ4) according to claim 8, wherein the third external output terminal (P), the second external output terminal (M), the first external output terminal (N), and the external input terminal (U) are arranged in this order from one short side of the package to the other short side, wherein the third external output terminal (P) is arranged adjacent to the external input terminal (P) of the first power semiconductor module (MJ3), and the external input terminal (U) is disposed adjacent to the external output terminal (U) of the first power semiconductor module (MJ 3), first capacitors (C 11, C 12) and second capacitors (C 21, C 22) each of which is disposed adjacent to the respective short sides of the first power semiconductor module (MJ 3) and the second power semiconductor module (MJ 4), a first conductor (A) connecting the first external input terminal (P) of the first power semiconductor module (MJ 3), the third external output terminal (P) of the second power semiconductor module (MJ 4) and positive-side potentials of the first capacitors (C 11, C 12), a second conductor (B), connecting the second external input terminal (M) of the first power semiconductor module (MJ 3), the second external output terminal (M) of the second power semiconductor module (MJ 4), intermediate potentials (Cm 1) of the first capacitors (C 11, C 12), and intermediate potentials (Cm 2) of the second capacitors (C 21, C 22), a third conductor (C) connecting the third external input terminal (N) of the first power semiconductor module (MJ 3), the first external output terminal (N) of the second power semiconductor module (MJ 4), and negative-side potentials of the second capacitors (C 21, C 22).

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