Optoelectronic semiconductor component

Abstract

Optoelectronic semiconductor component (1) with - a ladder frame (2) with at least two ladder frame parts (23, 24), - at least one optoelectronic semiconductor chip (3) mounted on a first of the leadframe parts (23) for generating radiation (R), and - a radiation-permeable casting body (5) which mechanically connects the lead frame parts (23, 24) to one another and which is designed to shape the radiation (R), wherein - a reflector trough (25) with a bottom surface (26) formed from the first leadframe part (23) and on which the semiconductor chip (3) is mounted, - the reflector trough (25) has a lateral surface which comprises at least three partial regions (27, 28, 29) which, viewed in plan view, encircle the base surface (26) and which directly follow one another in the direction away from the base surface (26), - in the first partial area (27) which is closest to the base surface (26), the lateral surface is oriented perpendicular to the base surface (26) with a tolerance of at most 10°, - the first partial region (27) projects beyond the semiconductor chip (3) in the direction away from the base surface (26), - in the second partial region (28) the lateral surface has a smaller gradient than in the third partial region (29), - the third section has a smaller gradient than the first section, - the partial areas (27, 28, 29) merge into one another in a kink-like manner, - the semiconductor component (1) is surface-mountable, and - a diameter (d) of the base surface (26) is between 1.1 times and 1.7 times a length of a diagonal of a main radiation side (30) of the semiconductor chip (3)

Description

[0001] An optoelectronic semiconductor component is specified.

[0002] Such optoelectronic semiconductor components are known, for example, from documents US 2011 / 0 309 736 A1 and US 6 809 342 B2. GB 2 329 238 A, US 2008 / 0 213 928 A1, and US 2007 / 0 018 175 A1 also disclose such optoelectronic components. Finally, US 2009 / 0 141 516 A1 and the two Japanese disclosures JP H10-107 325 A and JP 2012-174 703 A also describe optoelectronic semiconductor components.

[0003] One problem to be solved is to specify an optoelectronic semiconductor component that exhibits a spatially narrow radiation characteristic.

[0004] This problem is solved, among other things, by an optoelectronic semiconductor component having the features of the independent patent claim. Preferred developments are the subject of the dependent claims.

[0005] According to at least one embodiment, the semiconductor component has a lead frame. The lead frame is configured to electrically contact the semiconductor component. For example, the lead frame is formed from a sheet metal semi-finished product.

[0006] According to at least one embodiment, the leadframe of the semiconductor component comprises two or more than two leadframe parts. In the semiconductor component, the leadframe parts are not directly electrically connected to one another, so that no short circuit exists between the leadframe parts.

[0007] According to at least one embodiment, the semiconductor component includes one or more optoelectronic semiconductor chips. The at least one semiconductor chip is configured to generate electromagnetic radiation. For example, ultraviolet radiation, visible light, or near-infrared radiation is generated during operation of the semiconductor chip. The semiconductor chip is preferably a light-emitting diode or a laser diode. In addition to the optoelectronic semiconductor chip, other semiconductor chips or electronic components can be installed in the semiconductor component, for example, to protect against damage caused by electrostatic discharges or to detect radiation, such as a photodiode or a phototransistor.

[0008] According to at least one embodiment, the optoelectronic semiconductor chip is mounted on a first of the leadframe parts. Preferably, the semiconductor chip is connected to the first leadframe part both mechanically and electrically.

[0009] According to at least one embodiment, the semiconductor component comprises a potting body. The potting body is transparent to the radiation generated in the optoelectronic semiconductor chip. The potting body is preferably produced by pressing, casting, and / or injection molding. The potting body is preferably a one-piece body with a homogeneous material composition throughout the entire potting body, within the manufacturing tolerances.

[0010] According to at least one embodiment, the leadframe parts are mechanically connected to one another via the encapsulation body. In other words, the encapsulation body represents the component that mechanically supports and stabilizes the semiconductor component. The leadframe parts are firmly anchored in the encapsulation body, so that the leadframe parts do not detach from or from the encapsulation body during the intended use of the semiconductor component.

[0011] According to at least one embodiment, the encapsulated body is configured to shape the beam of radiation emitted and generated by the optoelectronic semiconductor chip. Preferably, the encapsulated body is shaped in places as a lens, in particular as a converging lens. Absorbing and / or reflective coatings may be applied to some areas of the encapsulated body. Alternatively, the encapsulated body may also be free of optically active coatings. The encapsulated body may be provided with an anti-reflection coating at least in places.

[0012] According to at least one embodiment, the first leadframe part, on which the optoelectronic semiconductor component is arranged, has a reflector trough. The reflector trough includes a bottom surface. The bottom surface can be a flat, smooth surface, within the scope of manufacturing tolerances. The semiconductor chip is preferably attached to the bottom surface by gluing, for example, with an electrically conductive silver adhesive, or by soldering.

[0013] According to at least one embodiment, the reflector trough has a lateral surface. The lateral surface is divided into three or more than three subregions. The subregions preferably completely surround the base surface, as viewed from above. In other words, the subregions, as viewed from above, are preferably formed as continuous rings.

[0014] According to at least one embodiment, the subregions of the lateral surface follow one another in the direction away from the base surface, in particular directly one after the other. A first subregion is located closest to the base surface, and the subregions are located further away from the base surface in ascending numbering.

[0015] According to at least one embodiment, the first partial region closest to the base surface is oriented perpendicularly or substantially perpendicularly to the base surface. "Substantially perpendicularly" can mean that the lateral surface in the first partial region is oriented perpendicularly to the base surface with a tolerance of at most 10°, or with a tolerance of at most 5°, or with a tolerance of at most 2°.

[0016] According to at least one embodiment, the first subregion projects beyond the semiconductor chip in a direction away from the bottom surface. In other words, the optoelectronic semiconductor chip is completely surrounded by the first subregion along a lateral direction. The optoelectronic semiconductor chip is then located in a type of well formed by the bottom surface and the first subregion. The semiconductor chip does not project beyond this well.

[0017] According to at least one embodiment, the lateral surface in the second partial region has a different gradient than the lateral surface in the third partial region. Particularly preferably, the gradient in the second partial region is smaller than the gradient in the third partial region. The gradient is an angle to a perpendicular to the base surface, wherein a perpendicular line is preferably related to a center point of the base surface, seen in plan view. The gradients of the second and third partial regions are preferably different from 0° and from 90°. In the direction away from the base surface, a diameter of the reflector trough preferably increases monotonically or strictly monotonically.

[0018] According to at least one embodiment, the partial regions merge into one another in a kinked manner. In other words, an edge is formed between the partial regions within the manufacturing tolerances. The term "edge" can mean that a manufacturing-related radius of curvature is at most 0.3 mm or at most 0.2 mm.

[0019] According to at least one embodiment, the semiconductor component is surface-mountable. The semiconductor component is therefore a so-called SMT component. This means that the semiconductor component can be placed on a mounting surface for electrical contact. The leadframe parts do not penetrate the mounting surface.

[0020] In at least one embodiment, the optoelectronic semiconductor component includes a leadframe with at least two leadframe parts and at least one optoelectronic semiconductor chip. The optoelectronic semiconductor chip is mounted on a first of the leadframe parts and is configured to generate radiation. A radiation-permeable encapsulating body of the semiconductor component mechanically connects the leadframe parts to one another. The encapsulating body is configured to shape the radiation beam. The first leadframe part has a reflector trough with a bottom surface on which the semiconductor chip is mounted. The reflector trough further has a lateral surface comprising at least three subregions. Viewed in a plan view of the bottom surface, the subregions encircle the bottom surface and follow one another in a direction away from the bottom surface.In the first subregion, which is closest to the base surface, the lateral surface is oriented perpendicular to the base surface with a tolerance of no more than 10°. The first subregion preferably projects beyond the semiconductor chip, in the direction away from the base surface. In the second subregion, the lateral surface has a smaller gradient than in the third subregion. The subregions preferably merge into one another in a kinked manner and / or directly. The semiconductor component is surface-mountable.

[0021] Surface-mount semiconductor components typically emit radiation over a wide solid angle range, particularly for infrared radiation. However, the portion of radiation emitted at large angles, such as angles greater than 50°, is often unusable for the intended application. Under certain circumstances, this portion of radiation can also have negative effects on the application, for example, interference from stray light. In the semiconductor component described, a high portion of the total optical power can be emitted within a small angular range.

[0022] The spatially narrow radiation characteristic is achieved in particular by the various sub-areas of the reflector trough, especially in combination with the specially shaped casting body.

[0023] According to at least one embodiment, the first sub-region accounts for at least 15% or at least 20% of the total height of the reflector trough. The total height refers to the extent of the reflector trough, starting from the floor surface and extending perpendicularly to the floor surface to an edge of the sub-region furthest away from the floor surface. Alternatively or additionally, this proportion of the first sub-region is at most 35%, at most 30%, or at most 25%.

[0024] According to at least one embodiment, the proportion of the second partial region to the total height of the reflector trough is at least 20%, or at least 25%, or at least 30%, or at least 35%. Alternatively or additionally, this proportion may be at most 60%, or at most 55%, or at most 50%.

[0025] According to at least one embodiment, the proportion of the third partial region to the total height of the reflector trough is at least 20%, or at least 25%, or at least 30%. Alternatively or additionally, this proportion is at most 50%, or at most 45%, or at most 40%.

[0026] According to at least one embodiment, the proportion of the second sub-region to the total height is greater than the proportion of the third sub-region. For example, the proportion of the second sub-region is at least 1.2 times or at least 1.3 times the proportion of the third sub-region.

[0027] According to at least one embodiment, the gradients of the second and third partial regions differ from each other by at least 3°, or by at least 5°, or by at least 7°. Alternatively or additionally, this difference is at most 25°, or at most 20°, or at most 15°.

[0028] According to at least one embodiment, the subregions each have straight surfaces, viewed in a cross-section perpendicular to the base surface. In other words, the subregions are each shaped as sections of a conical shell or a pyramidal shell, within the manufacturing tolerances. The first subregion can also be shaped as a section of a cylindrical shell. The subregions preferably do not have curved surfaces, viewed in a cross-section perpendicular to the base surface.

[0029] According to at least one embodiment, the slope of the second partial region is at least 25°, at least 30°, or at least 35°. Alternatively or additionally, this slope is at most 50°, at most 45°, or at most 40°. The slope is relative to the perpendicular to the ground surface.

[0030] According to at least one embodiment, the gradient of the third subregion is at least 25°, at least 30°, or at least 35°. Alternatively or additionally, this gradient is at most 45°, at most 40°, or at most 50°.

[0031] According to at least one embodiment, a diameter or an average diameter of the bottom surface is at least 1.1 times or at least 1.2 times the length of a diagonal of a main radiation side of the semiconductor chip. The main radiation side is preferably the side of the semiconductor chip facing away from the bottom surface. It is possible for the diameter of the bottom surface to correspond to at most 1.7 times, at most 1.6 times, or at most 1.5 times the diagonal length of the main radiation side.

[0032] According to at least one embodiment, the diameter of the base surface is at least 0.5 mm or at least 0.6 mm. Alternatively or additionally, this diameter is at most 1.0 mm, at most 0.85 mm, or at most 0.75 mm.

[0033] According to at least one embodiment, the total height of the reflector trough is at least 0.3 mm, or at least 0.4 mm, or at least 0.5 mm. Alternatively or additionally, the total height is at most 1.5 mm, or at most 1.2 mm, or at most 1.0 mm.

[0034] According to at least one embodiment, the total height of the reflector trough is at least twice or at least three times or at least four times the thickness of the lead frame.

[0035] According to at least one embodiment, the diameter of the base surface is greater than the total height of the reflector trough. For example, the diameter exceeds the total height by at least a factor of 1.05, or by at least a factor of 1.1, and / or by at most a factor of 1.8, or by at most a factor of 1.5.

[0036] According to at least one embodiment, the semiconductor chip is connected to the second leadframe part by an electrical connection means. The connection means is, for example, a bonding wire. The connection means can also be formed by multiple bonding wires or by an electrical bridge, in particular for protection against damage caused by electrostatic discharges.

[0037] According to at least one embodiment, the connecting means extends beyond the reflector trough. The height of the connecting means, measured from the floor surface and in a direction perpendicular to the floor surface, then exceeds the total height of the reflector trough.

[0038] According to at least one embodiment, the lateral surface of the reflector trough extends at a constant height and continuously around the base surface. In particular, the lateral surface is free of recesses, cutouts, or gaps for the connecting means.

[0039] According to at least one embodiment, the encapsulated body is shaped as a lens, in particular as a converging lens, in a region downstream of the reflector trough along a main radiation direction of the semiconductor chip. It is possible for remaining regions of the encapsulated body not to be configured as an optically active component for the radiation generated in the semiconductor chip.

[0040] According to at least one embodiment, the lens is spaced apart from the leadframe. A distance, along the main beam direction, between the lens and the leadframe is, for example, at least 0.6 times, at least 0.8 times, or at least 1.0 times the diagonal length of the main radiation side of the semiconductor chip. Alternatively or additionally, this distance is at most 2.4 times, at most 2.0 times, or at most 1.8 times the diagonal length.

[0041] According to at least one embodiment, the lens has an edge region and a central region. The edge region, viewed in plan view, preferably surrounds the central region all the way around. The lens can be rotationally symmetrical.

[0042] According to at least one embodiment, the lens is shaped in the central region as a partial surface of an ellipsoid of revolution. A major semi-axis corresponds, for example, to at least 1.5 times or at least 1.7 times a minor semi-axis of the ellipsoid of revolution and / or at most 2.5 times or 2.0 times. The minor semi-axis is preferably oriented parallel to the main emission direction of the semiconductor chip.

[0043] According to at least one embodiment, the lens is shaped as a cone in the edge region. In other words, the edge region has an outer boundary surface that is a portion of a conical surface.

[0044] According to at least one embodiment, the diameter of the central region is at least 0.7 times or at least 0.75 times the maximum diameter of the lens. Alternatively or additionally, the diameter of the central region is at most 0.9 times or 0.85 times the maximum lens diameter.

[0045] According to at least one embodiment, the central region, viewed from above, completely covers the reflector trough. In other words, the diameter of the central region is then at least as large as the diameter of the reflector trough.

[0046] According to at least one embodiment, the height of the edge region is at least 1.5 times or at least 2 times the height of the central region. Alternatively or additionally, the height of the edge region is at most 3.5 times or at most 3.0 times the height of the central region. The heights are understood to be, in particular, the dimensions of the corresponding regions along the main radiation direction.

[0047] According to at least one embodiment, at least the lateral surfaces of the reflector trough are partially or completely provided with a coating. The coating comprises one or more of the following materials or consists of one or more of these materials: Ag, Al, Au, Ni, Pd. The bottom surface is preferably provided with a solderable coating, for example, with or made of at least one of the materials Au, Ni, Pd, Sn.

[0048] According to at least one embodiment, the leadframe is formed from a copper alloy. The alloy preferably allows a degree of deformation of at least 3, or of at least 4, and / or of at most 6. The degree of deformation is the quotient of a maximum height of the reflector and a thickness of the raw material. The maximum height of the reflector is composed of a thickness of the reflector trough at the base surface and the total height of the reflector trough. For example, the leadframe is formed from an alloy Cu-ETP, CU-Fe2P, or CuCrSiTi, according to the EN designation.

[0049] According to at least one embodiment, the potting body is formed from an epoxy or an epoxy-silicone hybrid material.

[0050] According to at least one embodiment, an average thickness of the leadframe, particularly in regions outside the reflector trough, is at least 70 µm, or at least 90 µm, or at least 100 µm. This thickness may alternatively or additionally be at most 300 µm, or at most 250 µm, or at most 200 µm.

[0051] According to at least one embodiment, the potting body, viewed in plan view of the base surface, has external dimensions or an edge length of at most 6 mm or at most 5 mm. Alternatively or additionally, a maximum extension of the potting body along the main radiation direction can be at most 7 mm or at most 5 mm. It is possible for the potting body, with the exception of the lens, to be shaped as a cuboid. Cuboid does not preclude side surfaces from being designed slightly deviating from a cuboid shape, for example, with an angular tolerance of at most 15° or at most 10°.

[0052] According to at least one embodiment, a maximum diameter of the reflector trough is 2.5 mm or 2.0 mm. The diameter of the reflector trough can be at least 0.8 mm or at least 1.0 mm.

[0053] According to at least one embodiment, the leadframe parts penetrate the encapsulated body or lateral boundary surfaces of the encapsulated body outwardly only in a direction perpendicular to the main radiation direction, for example, with a tolerance of at most 15°, of at most 10°, or of at most 5°. The penetration points of the leadframe parts through the lateral boundary surface of the encapsulated body are preferably surrounded all around by a material of the encapsulated body.

[0054] According to at least one embodiment, only those regions of the leadframe parts intended for electrical contact protrude from the encapsulated body. In particular, the reflector trough can be completely surrounded by a material of the encapsulated body. Alternatively, it is possible for a base of the reflector trough to protrude from the encapsulated body or to be flush with the encapsulated body for improved thermal contact.

[0055] An optoelectronic semiconductor component described herein is explained in more detail below using exemplary embodiments with reference to the drawings. Like reference numerals indicate like elements in the individual figures. However, they are not drawn to scale; rather, individual elements may be exaggerated for clarity.

[0056] They show: Fig. 1 to 3 schematic representations of embodiments of optoelectronic semiconductor components described here, Fig. 4 a schematic representation of a radiation characteristic of an optoelectronic semiconductor component described here, and Fig. 5 and Fig. 6 schematic representations of radiation characteristics of semiconductor components.

[0057] In Fig. 1A is in a perspective view and in Fig. 1B shows a sectional view of an embodiment of an optoelectronic semiconductor component 1. The semiconductor component 1 comprises a leadframe 2 with two leadframe parts 23, 24. The first leadframe part 23 has a reflector trough 25 in which an optoelectronic semiconductor chip 3 is mounted. The semiconductor chip 3 is, for example, a light-emitting diode that emits radiation in the spectral range around 800 nm.

[0058] The semiconductor chip 3 is electrically connected to the second leadframe part 24 via a connecting means 4, which is a bonding wire. The bonding wire 4 extends from the reflector trough 25 and extends over the side walls of the reflector trough 25 to the second leadframe part 24.

[0059] The semiconductor component 1 further includes a potting body 5. Directly surrounding the leadframe 2, the potting body 5 is approximately cuboid-shaped. In a region downstream along a main radiation direction 35, the potting body 5 is shaped as a lens 50. For better anchoring of the leadframe 2 in the potting body 5, the leadframe parts 23, 24 have projections and / or openings.

[0060] The reflector trough 25 is shaped and matched to the lens 50 such that a narrow spectral radiation characteristic of the semiconductor component 1 can be achieved. For this purpose, a lateral surface of the reflector trough 25, which surrounds the bottom surface 26, is divided into three subregions 27, 28, 29. The first subregion 27, closest to the bottom surface 26, has surfaces oriented approximately perpendicular to the bottom surface 26 and facing the semiconductor chip 3.

[0061] The second section 28 directly adjoins the first section 27 and, in comparison to the third section 29, has a lower gradient. The sections 27, 28, 29 merge into one another in an approximately kinked manner. These sections 27, 28, 29 are shown in the sectional view according to Fig. 1B, each manufactured with straight boundary surfaces facing the semiconductor chip 3.

[0062] The lens 50 has a distance A from the partial regions 23, 24. The distance A is, for example, at least 0.2 mm and / or at most 0.5 mm. The lens 50 has a central region 53 and an edge region 52. The edge region 52 is frustoconical in shape and surrounds the central region 53. A height B of the edge region 52, starting from the cuboid-shaped part of the potting body 5, is, for example, at least 0.6 mm and / or at most 0.9 mm. A height C of the adjoining central region 53 is, for example, at least 0.3 mm and / or at most 0.8 mm. A diameter D of the central region 53 is, for example, at least 2.0 mm and / or at most 2.9 mm. A diameter E of the lens 50 at a transition region between the lens 50 and the cuboid-shaped part is, for example, at least 2.2 mm and / or at most 3.1 mm.

[0063] The central region 53, viewed in cross-section, is shaped as a section of an ellipse. The underlying ellipse has a major semi-axis of, for example, at least 2.1 mm and / or at most 2.4 mm. A minor semi-axis has, for example, a length of at most 1.4 mm and / or at least 1.2 mm. The minor semi-axis is aligned parallel to the main radiation direction 35.

[0064] The numerical values ​​given are only examples and can be scaled to one another.

[0065] Contrary to what is shown, it is possible for the reflector trough 25 to be filled not with a material of the encapsulating body 5, but with another filling (not shown), for example, silicone. Optically active components such as phosphors, scattering bodies, or filter particles can be incorporated into this additional filling (not shown). Likewise, contrary to what is shown, it is possible for the encapsulating body 5, as in all other exemplary embodiments, to be produced by multi-component injection molding. For example, the lens 50 is then formed from a radiation-transmissive material, and the cuboid-shaped part from a radiation-opaque material.

[0066] In the Fig. 2 and Fig. 3 illustrates more detailed views of reflector troughs 25 for optoelectronic semiconductor components 1 described here. Fig. 2A, Fig. 3A is a side view and in the Fig. 2B, Fig. 3B each shows a sectional view along the Fig. 2A, Fig. 3A. The reflector troughs 25 can each be provided with a casting body 5, such as in connection with Fig. 1 described, be subordinate.

[0067] The reflector trough 25 according to Fig. 2 is configured for a spatially narrow radiation pattern. For this purpose, the second sub-area 28 has a gradient of 40°, and the third sub-area 29 has a gradient of 35°. A predominant portion of the radiation is emitted within an angular range of + / - 10° around the main radiation direction 35.

[0068] In the embodiment according to Fig. 3, the slope of the second sub-region 28 is also 40°. The slope of the third sub-region 29 is 25°. With the semiconductor component 1 according to Fig. 3, a predominant radiation component is realized in a solid angle range of + / - 20° around the main radiation direction 35, compare also Fig. 5. Predominantly can mean more than 50% or more than 70% or more than 80%.

[0069] The Fig. 2 and Fig. The specific dimensions specified in Figure 3 are scalable. Preferably, the ratios of the individual sizes shown are realized with a tolerance of no more than 5% or no more than 10%, regardless of the absolute numerical values. For example, the ratio of the total height H of the reflector trough 25 to the diameter d of the base surface 26 is approximately 0.85, see Fig. 2B. The above absolute values ​​can, for example, be valid within a factor of 2 or within a factor of 3, preferably taking into account the relationships between the individual quantities. The same applies to Fig. 3.

[0070] In Fig. Figure 4 illustrates a radiation characteristic of the semiconductor component 1. Various beam bundles R are drawn, emanating from a main radiation side 30 of the semiconductor chip 3. Due to the reflector trough 25, the radiation R is concentrated toward the lens 50. At the edge region 52, refraction occurs toward the main radiation direction 35. At the central region 53, a relatively small change in direction of the radiation R occurs, since the radiation R impinges almost perpendicularly on the central region 53. In this case, the beam shaping is therefore essentially carried out by the reflector trough 25.

[0071] In Fig. 5, a relative intensity I and a luminous flux Φ integrated over the angle α are plotted, depending on an angle α to the main emission direction 35. Within an angular range of + / - 20° around the main emission direction 35, approximately 82% of the luminous flux Φ is emitted. An intensity maximum occurs at an angle of approximately 8°.

[0072] In Fig. 6 shows the luminous flux Φ, integrated over the angle α, for different designs. The values ​​for the semiconductor component 1 according to Fig. 3 resulting curve, compare also Fig. 5, is marked with 1. A radial LED is marked with r. Typical surface-mount designs are illustrated by the remaining three curves. In Fig. 6 it can be seen that with the described geometry of the reflector trough 25 of the semiconductor component 1 a particularly narrow spatial radiation characteristic can be achieved.

Claims

[1] Optoelectronic semiconductor component (1) with - a ladder frame (2) with at least two ladder frame parts (23, 24), - at least one optoelectronic semiconductor chip (3) mounted on a first of the leadframe parts (23) for generating radiation (R), and - a radiation-permeable casting body (5) which mechanically connects the lead frame parts (23, 24) to one another and which is designed to shape the radiation (R), wherein - a reflector trough (25) with a bottom surface (26) formed from the first leadframe part (23) and on which the semiconductor chip (3) is mounted, - the reflector trough (25) has a lateral surface which comprises at least three partial regions (27, 28, 29) which, viewed in plan view, encircle the base surface (26) and which directly follow one another in the direction away from the base surface (26), - in the first partial area (27) which is closest to the base surface (26), the lateral surface is oriented perpendicular to the base surface (26) with a tolerance of at most 10°, - the first partial region (27) projects beyond the semiconductor chip (3) in the direction away from the base surface (26), - in the second partial region (28) the lateral surface has a smaller gradient than in the third partial region (29), - the third section has a smaller gradient than the first section, - the partial areas (27, 28, 29) merge into one another in a kink-like manner, - the semiconductor component (1) is surface-mountable, and - a diameter (d) of the base surface (26) is between 1.1 times and 1.7 times a length of a diagonal of a main radiation side (30) of the semiconductor chip (3) [2] Optoelectronic semiconductor component (1) according to the preceding claim, in which a proportion of the first partial area (27) of a total height of the reflector trough (25) is between 15% and 30%, in which the proportion of the second partial area (28) to the total height (H) of the reflector trough (25) is between 25% and 55%, and in which the proportion of the third partial area (28) to the total height (H) of the reflector trough (25) is between 20% and 50% inclusive. [3] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the gradients of the second and third partial regions (28, 29) differ by at least 5° and by at most 25°. [4] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the slope of the second partial region (28) is between 30° and 50° inclusive, relative to a perpendicular (35) to the bottom surface (26). [5] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the slope of the third partial region (28) is between 25° and 45° inclusive, relative to the perpendicular (35) to the bottom surface (26). [6] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which more than 70% of the radiation (R) is emitted in a solid angle range of + / - 20° around a main emission direction (35). [7] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the diameter (d) of the base surface (26) is between 0.5 mm and 2.0 mm inclusive, and in which the total height (H) of the reflector trough (25) is between 0.3 mm and 1.5 mm inclusive, where the diameter (d) is greater than the total height (H) . [8] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the semiconductor chip (3) is electrically connected to the second leadframe part (24) by an electrical connecting means (4), in particular a bonding wire, wherein the connecting means (4) projects beyond the reflector trough (25) and the lateral surface extends continuously and at a constant height around the base surface (26). [9] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the potting body (5) is shaped as a lens (50) in a region downstream of the reflector trough (25) along a main radiation direction (35) of the semiconductor chip (3), wherein a distance along the main radiation direction (35) between this region shaped as a lens (50) and the lead frame (2) is between 0.6 times and 2.4 times the diagonal length of the main radiation side (30) of the semiconductor chip (3). [10] Optoelectronic semiconductor component (1) according to the preceding claim, in which the lens (50) has an edge region (52) and a central region (53), wherein the lens (50) is ellipsoidal in the central region (53) and conical in the edge region (52). [11] Optoelectronic semiconductor component (1) according to the preceding claim, in which a diameter (D) of the central region (53) is between 0.7 and 0.9 times a maximum diameter (E) of the lens (50), wherein the central region (53), seen in plan view, completely covers the reflector trough (25). [12] Optoelectronic semiconductor component (1) according to one of claims 10 or 11, wherein a height (B) of the edge region (52) is between 1.5 times and 3.5 times a height (C) of the central region (52). [13] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which - the lateral surfaces are provided with a coating at least in places and the coating contains or consists of one or more of the following materials: Ag, Al, Au, Ni, Pd, - the lead frame (2) is made of a copper alloy and the potting body (5) is made of an epoxy, - the lead frame (2) has an average thickness of between 90 µm and 300 µm, and - the semiconductor chip (3) is a light-emitting diode emitting in the red or near-infrared spectral range. [14] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which - the casting body (5), seen in plan view, has external dimensions of not more than 6 mm, - a maximum extension of the casting body (5) along the main radiation direction (35) is not more than 7 mm, - the maximum diameter of the reflector trough (25) is 2.5 mm, - the casting body (5), with the exception of the lens (50), is shaped as a cuboid, - the lead frame parts (23, 24) pierce the potting body (5) outwards only in a direction perpendicular to the main radiation direction (35) and are surrounded all around by a material of the potting body (5) at a pierce point.

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