Optoelectronic component, optoelectronic arrangement, method for manufacturing an optical element and method for manufacturing an optoelectronic component

Abstract

Optoelectronic component (200) with an optoelectronic semiconductor chip (210) with a radiation emission surface (211), wherein an optical element (300) is arranged above the radiation emission surface (211), wherein the optical element (300) comprises a material (310) in which light-scattering particles (320) are embedded, wherein a concentration of the embedded light-scattering particles (320) has a gradient (330) which encloses an angle (331) with the radiation emission surface (211) that deviates from 90°, thereby causing a lateral deflection of electromagnetic radiation emitted by the optoelectronic semiconductor chip (210) at the radiation emission surface (211).

Description

[0001] The present invention relates to an optoelectronic component according to claim 1, an optoelectronic arrangement according to claim 8, a method for manufacturing an optical element according to claim 10, and a method for manufacturing an optoelectronic component according to claim 15.

[0002] Optoelectronic components, such as light-emitting diodes (LEDs), designed to emit electromagnetic radiation laterally, are known from the prior art. It is known to use such optoelectronic components, for example, for backlighting liquid crystal displays. In this application, the optoelectronic components are arranged such that the radiation they emit is directed laterally into an optical fiber. The optical components required for the lateral deflection of the radiation in known optoelectronic components limit the possibilities for reducing the thickness of such known arrangements.

[0003] US 2011 / 0001151 A1 describes an LED component with an LED and with different scattering ranges that scatter light of different wavelengths.

[0004] US patent 2011 / 0133237 A1 describes a light-emitting device comprising a semiconductor chip and a potting compound. The potting compound contains nanoparticles embedded in a matrix material.

[0005] US patent 2012 / 0248479 A1 describes an LED component with layers arranged over an LED chip that feature quantum dots.

[0006] US patent 2006 / 0 220 046 A1 describes a light-mixing LED component with scattering particles arranged in a potting material.

[0007] One object of the present invention is to provide an optoelectronic component. This object is achieved by an optoelectronic component having the features of claim 1. Another object of the present invention is to provide an optoelectronic arrangement. This object is achieved by an optoelectronic arrangement having the features of claim 8. Another object of the present invention is to provide a method for manufacturing an optical element. This object is achieved by a method having the features of claim 10. Another object of the present invention is to provide a method for manufacturing an optoelectronic component. This object is achieved by a method having the features of claim 15. Various embodiments are specified in the dependent claims.

[0008] An optoelectronic device comprises an optoelectronic semiconductor chip with a radiation emission surface. An optical element is positioned above the radiation emission surface. The optical element has a material in which light-scattering particles are embedded. A concentration of the embedded light-scattering particles exhibits a gradient that forms an angle with the radiation emission surface that deviates from 90°.

[0009] Advantageously, the inclined concentration gradient of the light-scattering particles embedded in the material of the optical element of this optoelectronic device causes a lateral deflection of the electromagnetic radiation emitted by the optoelectronic semiconductor chip at its radiation emission surface. This makes the optoelectronic device advantageously suitable for coupling electromagnetic radiation into an optical waveguide arranged laterally next to the optoelectronic device and oriented parallel to the radiation emission surface of the optoelectronic semiconductor chip. Due to the lateral deflection of the electromagnetic radiation emitted by the optoelectronic semiconductor chip, it is not necessary to orient the radiation emission surface of the optoelectronic semiconductor chip towards the optical waveguide.This allows the optoelectronic semiconductor chip of the optoelectronic component to be arranged flat on a substrate, which enables good thermal contact of the optoelectronic semiconductor chip. Furthermore, this allows the optoelectronic component to be designed, for example, as a surface-mount device (SMD), which enables simple and cost-effective assembly of the optoelectronic component.

[0010] In one embodiment of the optoelectronic component, the angle is between 35° and 55°. Preferably, the angle is between 40° and 50°. For example, the angle can be approximately 45°. Advantageously, this achieves the deflection of electromagnetic radiation emitted at the radiation emission surface of the optoelectronic semiconductor chip of the optoelectronic component in a direction perpendicular to the radiation emission surface by the optical element at approximately a right angle.

[0011] In one embodiment of the optoelectronic component, the material comprises a silicone, a polycarbonate, or a glass. Advantageously, the material thus forms an optically essentially transparent matrix that supports the embedded light-scattering particles.

[0012] In one embodiment of the optoelectronic component, the light-scattering particles have an average size between 200 nm and 50 µm. Advantageously, the light-scattering particles thus effectively scatter electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0013] In one embodiment of the optoelectronic component, the light-scattering particles comprise TiO2, Al2O3, Hf2O5, or SiO2. Advantageously, the light-scattering particles effectively scatter electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0014] In one embodiment of the optoelectronic component, the optical element has a thickness of between 0.1 mm and 1 mm above the radiation emission surface in a direction perpendicular to the radiation emission surface. Preferably, the optical element has a thickness of less than 0.3 mm. This advantageously allows the optoelectronic component to be designed with a very small overall thickness (height). The small thickness of the optical element also makes it possible to couple electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic component into a thin optical fiber.

[0015] In one embodiment of the optoelectronic device, wavelength-converting particles are additionally coupled into the material of the optical element. These wavelength-converting particles can be, for example, organic or inorganic phosphors. The wavelength-converting particles can also include quantum dots. The wavelength-converting particles embedded in the material of the optical element can serve to convert a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic device. The optoelectronic semiconductor chip can, for example, be configured to emit electromagnetic radiation with a wavelength from the blue spectral range.The wavelength-converting particles can, for example, be designed to convert electromagnetic radiation with a wavelength from the blue spectral range into electromagnetic radiation with a white spectral distribution.

[0016] An optoelectronic arrangement comprises an optoelectronic component of the aforementioned type and an optical fiber. The optical fiber is positioned laterally next to the optical element. Advantageously, the optoelectronic component of this arrangement can couple electromagnetic radiation, such as visible light, into the optical fiber. This makes the optoelectronic arrangement suitable, for example, for backlighting in a liquid crystal display. Advantageously, the optoelectronic arrangement can be very thin in the direction perpendicular to the radiation emission surface of the optoelectronic semiconductor chip.

[0017] In one embodiment of the optoelectronic arrangement, the optical fiber is oriented parallel to the radiation emission surface. Advantageously, this allows electromagnetic radiation deflected in the optical element of the optoelectronic component of the optoelectronic arrangement to be coupled into the optical fiber and transported through it.

[0018] A method for fabricating an optical element comprises steps for forming a block of material with embedded light-scattering particles, wherein the concentration of the embedded light-scattering particles exhibits a gradient, and for dividing the block to obtain an optical element with a bottom surface, wherein the gradient forms an angle with the bottom surface that is not 90°. The optical element obtained by this method enables the deflection of electromagnetic radiation entering the optical element at the bottom surface in a direction perpendicular to the bottom surface. Advantageously, the method allows for the simple and cost-effective fabrication of the optical element.

[0019] In one embodiment of the method, the block formation process involves steps for providing a layer of material with embedded light-scattering particles, allowing the light-scattering particles to settle in the material such that a concentration gradient is established, and hardening the layer to form the block. Advantageously, this method enables a particularly simple and cost-effective formation of the block with embedded light-scattering particles whose concentration exhibits a gradient. Advantageously, gravity is used to establish the gradient.

[0020] In one embodiment of the method, the block formation process involves steps for providing a first layer of material and a second layer of material, wherein the first layer has a first concentration of embedded light-scattering particles and the second layer has a second concentration of embedded light-scattering particles, and for bonding the first and second layers together to form the block. Advantageously, this method allows for particularly precise control over the shape of the concentration gradient of the light-scattering particles embedded in the block material. The bonding of the first and second layers can be achieved, for example, by bonding the layers together with an adhesive.Alternatively, the first and second layers can be bonded together before the material of both layers has fully cured. This can eliminate the need for a separate adhesive.

[0021] In one embodiment of the method, forming the block involves a step of co-extruding a first layer of the material and a second layer of the material, wherein the first layer has a first concentration of embedded light-scattering particles and the second layer has a second concentration of embedded light-scattering particles, and wherein the first and second layers are co-extruded one on top of the other to form the block. Advantageously, this method also allows for precisely controllable shaping of the concentration gradient of the light-scattering particles embedded in the block material. Due to the co-extrusion of the layers forming the block, subsequent bonding of the layers is advantageously unnecessary.

[0022] In one embodiment of the method, the block is formed from more than two layers. Advantageously, the shape of the concentration gradient of the light-scattering particles embedded in the block material can thereby be modeled particularly precisely.

[0023] A method for fabricating an optoelectronic device comprises steps for fabricating an optical element according to a method of the aforementioned type, for providing an optoelectronic semiconductor chip with a radiation emission surface, and for arranging the optical element over the radiation emission surface. Advantageously, this enables simple and cost-effective fabrication of the optoelectronic device. The optical element of the optoelectronic device obtainable by this method can advantageously deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic device.

[0024] The properties, features, and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more readily understandable in connection with the following description of the exemplary embodiments, which are explained in more detail in conjunction with the drawings. These drawings are shown in schematic representations. Fig. 1 a cutaway side view of an optoelectronic arrangement; Fig. 2 a cutaway side view of a layer of a material with embedded light-scattering particles; Fig. 3 a cutaway side view of the layer after the light-scattering particles have settled; Fig. 4 a cut side view of a block formed from the layer for the production of a plurality of optical elements; Fig. 5 a plurality of sub-layers to produce a block; Fig. 6 a cut side view of a block formed from the sub-layers; Fig. 7 a sectional side view of a plurality of co-extruded sub-layers for the production of a block; and Fig. 8 A cut side view of a block formed from the co-extruded layers.

[0025] Fig. Figure 1 shows a schematic cutaway side view of an optoelectronic arrangement 100. The optoelectronic arrangement 100 can, for example, be used for backlighting in a liquid crystal display (LCD). For example, the optoelectronic arrangement 100 can be used for backlighting in a liquid crystal display of a portable electronic device, such as a mobile phone.

[0026] The optoelectronic arrangement 100 comprises an optoelectronic component 200. The optoelectronic component 200 serves to generate and direct electromagnetic radiation, in particular visible light.

[0027] The optoelectronic component 200 comprises an optoelectronic semiconductor chip 210. The optoelectronic semiconductor chip 210 has a radiation emission surface 211. The optoelectronic semiconductor chip 210 is configured to emit electromagnetic radiation, for example visible light, from its radiation emission surface 211. The optoelectronic semiconductor chip 210 can, for example, be configured as a light-emitting diode chip (LED chip).

[0028] Solder contact pads can be formed on the underside of the optoelectronic semiconductor chip 210 opposite the radiation emission surface 211. In this case, the optoelectronic component 200 can be designed as a surface-mount device (SMD) suitable for surface mounting. The solder contact pads arranged on the underside of the optoelectronic semiconductor chip 210 can, for example, be intended for electrical contact by reflow soldering.

[0029] The optoelectronic component 200 further comprises an optical element 300. The optical element 300 is essentially cuboid in shape and has a top surface 301 and a bottom surface 302 opposite the top surface 301. The optical element 300 also has a first side surface 304 and a second side surface 305 opposite the first side surface 304. The first side surface 304 and the second side surface 305 are each oriented perpendicular to the top surface 301 and the bottom surface 302 of the optical element 300, respectively.

[0030] Between the top surface 301 and the bottom surface 302, the optical element 300 has a thickness 303 measured perpendicular to the bottom surface 302. The thickness 303 of the optical element 300 is preferably between 0.1 mm and 1 mm. Particularly preferably, the thickness 303 of the optical element 300 is less than 0.3 mm.

[0031] The optical element 300 is arranged above the radiation emission surface 211 of the optoelectronic semiconductor chip 210. The underside 302 of the optical element 300 faces the radiation emission surface 211 and is preferably in contact with it. The size of the underside 302 of the optical element 300 preferably corresponds approximately to the size of the radiation emission surface 211 of the optoelectronic semiconductor chip 210. Electromagnetic radiation emitted from the radiation emission surface 211 of the optoelectronic semiconductor chip 210 can pass through the underside 302 into the optical element 300.

[0032] The optical element 300 has a matrix 310 made of an optically essentially transparent material. For example, the matrix 310 of the optical element 300 can be silicon, polycarbonate, or glass. Light-scattering particles 320 are embedded in the matrix 310 of the optical element 300. The light-scattering particles 320 can be, for example, TiO2, Al2O3, Hf2O5, or SiO2. The light-scattering particles 320 have a mean size 321, which is shown in the schematic view of the Fig. 1 is greatly exaggerated. The average size 321 of the light-scattering particles 320 can, for example, range between 200 nm and 50 µm.

[0033] The light-scattering particles 320 are not homogeneously distributed in the matrix 310 of the optical element 300. Instead, the concentration of light-scattering particles 320 embedded in the matrix 310 of the optical element 300 exhibits a concentration gradient 330 along which the concentration of light-scattering particles 320 embedded in the matrix 310 increases. The concentration gradient 330 forms an angle 331 with the underside 302 of the optical element 300. Thus, the concentration gradient 330 is also arranged at an angle 331 with respect to the radiation emission surface 211 of the optoelectronic semiconductor chip 210. The angle 331 has a value other than 90°. The concentration gradient 330 is therefore not perpendicular to the underside 302 of the optical element 300 and the radiation emission surface 211 of the optoelectronic semiconductor chip 210. Preferably, the angle 331 has a value between 35° and 55°.Angle 331 is particularly preferred to have a value between 40° and 50°. For example, angle 331 can have a value of 45°.

[0034] Due to the increasing concentration of the light-scattering particles 320 embedded in the matrix 310 along the concentration gradient 330, the light-scattering particles 320 embedded in the matrix 310 have a lower concentration in a first sub-region of the optical element 300 located near the bottom 302 and the first side surface 304 than in a second sub-region of the optical element 300 located near the top 301 and the second side surface 305. In the first sub-region of the optical element 300, the concentration of the light-scattering particles 320 embedded in the matrix 310 can, for example, be 0%. In the second sub-region of the optical element 300, the concentration of the light-scattering particles 320 can, for example, be 25%.

[0035] The concentration of the light-scattering particles 320 embedded in the matrix 310 of the optical element 300 can increase continuously along the concentration gradient 330. However, the concentration of the light-scattering particles 320 can also increase in steps along the concentration gradient 330. A higher number of steps is preferred over a lower number of steps.

[0036] The concentration gradient 330 of the light-scattering particles 320 embedded in the matrix 310 of the optical element 300 causes a deflection of electromagnetic radiation entering the optical element 300 at the bottom surface 302. This deflection occurs through scattering of the electromagnetic radiation by the light-scattering particles 320. The electromagnetic radiation is deflected in the opposite direction to the concentration gradient 330. Electromagnetic radiation entering the optical element 300 at the bottom surface 302, essentially in a direction perpendicular to the bottom surface 302, is thereby deflected within the optical element 300 towards the first side surface 304. A large proportion of the radiation entering the optical element 300 at the bottom surface 302 can thus exit the optical element 300 through the first side surface 304 in a direction essentially perpendicular to the first side surface 304.Part of the radiation entering the optical element 300 at the underside 302 exits the optical element 300 at other surfaces of the optical element 300.

[0037] The optoelectronic arrangement 100 comprises, in addition to the optoelectronic component 200, an optical fiber 110. The optical fiber 110 can, for example, be designed as a planar optical fiber. The optical fiber 110 is arranged next to the optoelectronic component 200 such that electromagnetic radiation emerging from the first side surface 304 of the optical element 300 of the optoelectronic component 200 enters the optical fiber 110 and is guided by the optical fiber 110 in a direction 111 oriented substantially parallel to the radiation emission surface 211 of the optical semiconductor chip 210 of the optoelectronic component 200 of the optoelectronic arrangement 100. The electromagnetic radiation guided in the optical fiber 110 can, for example, be used for backlighting a liquid crystal display.In the direction perpendicular to the light guidance direction 111, the light guide 110 preferably has a thickness that corresponds approximately to the thickness 303 of the optical element 300.

[0038] In addition to the light-scattering particles 320, wavelength-converting particles can also be embedded in the matrix 310 of the optical element 300. The wavelength-converting particles can, for example, comprise an organic or an inorganic phosphor. The wavelength-converting particles can also include quantum dots. The wavelength-converting particles can be designed to convert a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 of the optoelectronic device 200. For this purpose, the wavelength-converting particles can be configured to absorb electromagnetic radiation with a first wavelength and then emit electromagnetic radiation with a second, typically longer, wavelength.The wavelength-converting particles embedded in the matrix 310 of the optical element 300 can, for example, be designed to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip 210 with a wavelength from the blue spectral range into electromagnetic radiation with a white spectral distribution. However, embedding wavelength-converting particles in the matrix 310 of the optical element 300 can also be omitted.

[0039] Based on the Fig. Figures 2 to 4, 5 to 6, and 7 to 8 below describe variants of a method for manufacturing the optical element 300 of the optoelectronic component 200 of the optoelectronic arrangement 100. Corresponding components are designated in all figures with the same reference numerals as in Fig. 1 and not described in detail again.

[0040] Fig. Figure 2 shows a schematically cut side view of a layer 410. The layer 410 has a top surface 401 and a bottom surface 402 opposite the top surface 401. The layer 410 has a material that corresponds to the material of the matrix 310 of the optical element 300, or from which the material of the matrix 310 of the optical element 300 can be formed. The material of the layer 410 is not fully cured.

[0041] Light-scattering particles 320 are embedded in layer 410. These light-scattering particles can be distributed essentially homogeneously within layer 410. Therefore, the light-scattering particles 320 embedded in layer 410 can exhibit an essentially homogeneous concentration.

[0042] Since the material of layer 410 is not fully cured, the light-scattering particles 320 embedded in layer 410 can sink towards the underside 402 of layer 410 under the influence of gravity. This is shown in the schematic sectional side view of the Fig. Figure 3 illustrates this. As the light-scattering particles 320 embedded in layer 410 gradually sink over time, a concentration gradient 330 forms in layer 410. This concentration gradient 330 extends from the top 401 to the bottom 402 of layer 410 and is essentially perpendicular to both the top 401 and bottom 402 of layer 410.

[0043] Once the concentration gradient 330 of the light-scattering particles 320 embedded in layer 410 has reached the desired level, the material of layer 410 can be cured. Curing of the material of layer 410 can be achieved, for example, by thermal treatment or treatment with UV light.

[0044] The curing of the material in layer 410 prevents the further settling of the light-scattering particles 320 within the material of layer 410. The light-scattering particles 320 are fixed within the material of layer 410. Thus, the curing of the material in layer 410 forms a first block 400 from layer 410. The cured material of layer 410 forms a matrix 310 of the first block 400. The light-scattering particles 320 embedded in the matrix 310 of the first block 400 have a concentration in the matrix 310 that increases along the concentration gradient 330. The concentration gradient 330 is oriented essentially perpendicular to the top surface 401 and the bottom surface 402 of layer 410, which form the top and bottom surfaces of the first block 400. Fig. Figure 4 shows a schematic cutaway side view of the first block 400.

[0045] In a subsequent processing step, the first block 400 can be divided to obtain a plurality of optical elements 300. The division of the first block 400 can be achieved, for example, by cutting it. The first block 400 is divided such that the undersides 302 of the resulting optical elements, with their concentration gradient 330, form an angle 331 that deviates from 90°. The optical elements 300 are thus extracted obliquely from the first block 400, for example, by cutting them out.

[0046] Fig. Figure 5 shows a schematic cutaway side view of a first sublayer 510, a second sublayer 520, a third sublayer 530, and a fourth sublayer 540. The sublayers 510, 520, 530, and 540 are formed in the form of thin films. The sublayers 510, 520, 530, and 540 have defined thicknesses. The thicknesses of the individual sublayers 510, 520, 530, and 540 can be the same or different from each other.

[0047] Each of the sublayers 510, 520, 530, 540 has a material that corresponds to the material of matrix 310 of optical element 300. Light-scattering particles 320 are embedded in each of the sublayers 510, 520, 530, 540. The light-scattering particles 320 embedded in the material of the first sublayer 510 have a first concentration. The light-scattering particles 320 embedded in the material of the second sublayer 520 have a second concentration. The light-scattering particles 320 embedded in the material of the third sublayer 530 have a third concentration. The light-scattering particles 320 embedded in the material of the fourth sublayer 540 have a fourth concentration. Within the sublayers 510, 520, 530, 540, the concentration of the light-scattering particles 320 is essentially constant.The second concentration of light-scattering particles 320 is, however, greater than the first concentration of light-scattering particles 320. The third concentration is again greater than the second concentration. The fourth concentration is greater than the third concentration.

[0048] The sublayers 510, 520, 530, and 540 can be joined together over their entire surface to form a second block 500. The second sublayer 520 is positioned between the first sublayer 510 and the third sublayer 530. The third sublayer 530 is positioned between the second sublayer 520 and the fourth sublayer 540. A top surface of the first sublayer 510 forms a top surface 501 of the second block 500. A bottom surface of the fourth sublayer 540 forms a bottom surface 502 of the second block 500.

[0049] Naturally, the second block 500 can also be formed from more than four sublayers 510, 520, 530, 540. The individual sublayers preferably exhibit increasing concentrations of embedded light-scattering particles 320 in the order in which they are joined together. However, it is also possible to form the second block 500 from only two sublayers 510, 520 or from three sublayers 510, 520, 530.

[0050] The joining of the sublayers 510, 520, 530, 540 to form the second block 500 can be achieved, for example, by laminating the sublayers 510, 520, 530, 540. The individual sublayers 510, 520, 530, 540 can be bonded together over their entire surface, for example, using a separate adhesive. In this case, the material of the sublayers 510, 520, 530, 540, which contains the embedded light-scattering particles 320, can be fully cured before the sublayers 510, 520, 530, 540 are joined.

[0051] The sublayers 510, 520, 530, and 540 can also be joined together to form the second block 500 without the use of a separate adhesive. In this case, the material of the sublayers 510, 520, 530, and 540, which contains the embedded light-scattering particles 320, is not yet fully cured during the joining process, thus enabling a permanent bond between the sublayers 510, 520, 530, and 540. After joining the sublayers 510, 520, 530, and 540, the material of the sublayers 510, 520, 530, and 540, which contains the embedded light-scattering particles 320, can be cured, for example, by thermal treatment or treatment with UV light.

[0052] Fig. Figure 6 shows a schematic sectional side view of the second block 500, which is formed from the sublayers 510, 520, 530, and 540. The material of the interconnected sublayers 510, 520, 530, and 540 forms a matrix 310 of the second block 500, in which the light-scattering particles 320 are embedded. In the second block 500, the embedded light-scattering particles 320 exhibit a concentration gradient 330, which points from the top 501 of the second block 500 to the bottom 502 of the second block 500 and is oriented essentially perpendicular to both the top 501 and the bottom 502. Along the concentration gradient 330, the concentration of the light-scattering particles 320 embedded in the matrix 310 of the second block 500 increases in steps.

[0053] In a subsequent processing step, 300 optical elements can be formed from the second block of 500 by dividing it into smaller pieces based on the Fig. The first block, 400, is divided analogously as explained in section 4.

[0054] Fig. Figure 7 shows a schematic cutaway side view of a first sublayer 610, a second sublayer 620, a third sublayer 630, and a fourth sublayer 640. The sublayers 610, 620, 630, and 640 are formed as thin films by co-extrusion using an extrusion die 650. Each of the sublayers 610, 620, 630, and 640 has a defined thickness. The sublayers 610, 620, 630, and 640 can each have the same thickness or different thicknesses.

[0055] Sublayers 610, 620, 630, and 640 each contain a material corresponding to the material of matrix 310 of optical element 300. Light-scattering particles 320 are embedded in the material of sublayers 610, 620, 630, and 640. Within each sublayer 610, 620, 630, and 640, the concentration of the embedded light-scattering particles 320 is essentially constant. In the first sublayer 610, the embedded light-scattering particles 320 have a first concentration. In the second sublayer 620, the embedded light-scattering particles 320 have a second concentration. In the third sublayer 630, the embedded light-scattering particles 320 have a third concentration. In the fourth sublayer 640, the embedded light-scattering particles 320 have a fourth concentration. The second concentration is higher than the first concentration. The third concentration is greater than the second concentration.The fourth concentration is greater than the third concentration.

[0056] During co-extrusion, the sub-layers 610, 620, 630, and 640 are joined together to form a third block 600. The top surface of the first sub-layer 610 forms the top surface 601 of the third block 600. The bottom surface of the fourth sub-layer 640 forms the bottom surface 602 of the third block 600. The second sub-layer 620 is positioned between the first sub-layer 610 and the third sub-layer 630. The third sub-layer 630 is positioned between the second sub-layer 620 and the fourth sub-layer 640. Naturally, the third block 600 could also be formed from fewer or more than four sub-layers 610, 620, 630, and 640.

[0057] Fig. Figure 8 shows a schematic cutaway side view of the third block 600 formed by co-extrusion of the sublayers 610, 620, 630, 640. The material of the sublayers 610, 620, 630, 640 forms a matrix 310 of the third block 600. The light-scattering particles 320 are embedded in the matrix 310 of the third block 600. The concentration of the light-scattering particles 320 embedded in the matrix 310 exhibits a concentration gradient 330. The concentration gradient 330 extends from the top 601 to the bottom 602 of the third block 600 and is oriented essentially perpendicular to the top 601 and bottom 602 of the third block 600. Along the concentration gradient 330, the concentration of the light-scattering particles 320 embedded in the matrix 310 of the third block 600 increases in steps.

[0058] Optical elements 300 can be formed from the third block 600 by dividing the third block 600. The third block 600 is divided in the same way as the first block 400 was divided using the Fig. 4 was explained.

[0059] To produce the optical element 300, a block 400, 500, 600 is first formed, in whose matrix material 310 light-scattering particles 320 are embedded, wherein a concentration of the embedded light-scattering particles 320 exhibits a concentration gradient 330. Subsequently, the block 400, 500, 600 is divided to obtain at least one optical element 300 with a bottom surface 302. The block 400, 500, 600 is divided such that the bottom surface 302 of the optical element forms an angle with the concentration gradient 330 that deviates from 90°.

[0060] The invention has been illustrated and described in more detail with reference to preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations can be derived from them by a person skilled in the art without departing from the scope of protection of the invention.

Claims

[1] Optoelectronic component (200) with an optoelectronic semiconductor chip (210) with a radiation emission surface (211), wherein an optical element (300) is arranged above the radiation emission surface (211), wherein the optical element (300) comprises a material (310) in which light-scattering particles (320) are embedded, wherein a concentration of the embedded light-scattering particles (320) has a gradient (330) which encloses an angle (331) with the radiation emission surface (211) that deviates from 90°, thereby causing a lateral deflection of electromagnetic radiation emitted by the optoelectronic semiconductor chip (210) at the radiation emission surface (211). [2] Optoelectronic component (200) according to claim 1, wherein the angle (331) is between 35° and 55°, preferably between 40° and 50°. [3] Optoelectronic component (200) according to one of the preceding claims, wherein the material (310) comprises a silicone, polycarbonate or glass. [4] Optoelectronic device (200) according to one of the preceding claims, wherein the light-scattering particles (320) have a mean size (321) between 200 nm and 50 µm. [5] Optoelectronic device (200) according to one of the preceding claims, wherein the light-scattering particles (320) comprise TiO2, Al2O3, Hf2O5 or SiO2. [6] Optoelectronic component (200) according to any one of the preceding claims, wherein the optical element (300) above the radiation emission surface (211) has a thickness (303) between 0.1 mm and 1 mm in the direction perpendicular to the radiation emission surface (211), preferably a thickness (303) of less than 0.3 mm. [7] Optoelectronic device (200) according to one of the preceding claims, wherein wavelength-converting particles are embedded in the material (310). [8] Optoelectronic arrangement (100) with an optoelectronic component (200) according to one of the preceding claims and with an optical fiber (110), wherein the light guide (110) is arranged laterally next to the optical element (300). [9] Optoelectronic arrangement (100) according to claim 8, wherein the light guide (110) is oriented parallel to the radiation emission surface (211). [10] Method for manufacturing an optical element (300) by the following steps: - Forming a block (400, 500, 600) of a material (310) with embedded light-scattering particles (320), wherein a concentration of the embedded light-scattering particles (320) has a gradient (330); - Dividing the block (400, 500, 600) to obtain an optical element (300) with a bottom surface (302), wherein the gradient (330) with the bottom surface (302) forms an angle (331) that is different from 90°. [11] Method according to claim 10, wherein the following steps are carried out to form the block (400): - Providing a layer (410) of the material (310) with embedded light-scattering particles (320); - Allowing the light-scattering particles (320) to sink in the material (310) such that the concentration gradient (330) is formed; - Curing of the material (310) of the layer (410) to form the block (400). [12] Method according to claim 10, wherein the following steps are carried out to form the block (500): - Providing a first layer (510) of the material (310) and a second layer (520) of the material (310), wherein the first layer (510) has a first concentration of embedded light-scattering particles (320) and the second layer (520) has a second concentration of embedded light-scattering particles (320); - Connecting the first layer (510) and the second layer (520) over a surface area to form the block (500). [13] Method according to claim 10, wherein the following step is performed to form the block (600): - Co-extruding a first layer (610) of the material (310) and a second layer (620) of the material (310), wherein the first layer (610) has a first concentration of embedded light-scattering particles (320) and the second layer (620) has a second concentration of embedded light-scattering particles (320), wherein the first layer (610) and the second layer (620) are co-extruded on top of each other to form the block (600). [14] Method according to one of claims 12 and 13, where the block (500, 600) is formed from more than two layers (510, 520, 530, 540, 610, 620, 630, 640). [15] Method for manufacturing an optoelectronic component- ments (200) with the following steps: - Manufacturing an optical element (300) according to a method according to one of claims 10 to 14; - Providing an optoelectronic semiconductor chip (210) with a radiation emission surface (211); - Arranging the optical element (300) above the radiation emission surface (211).

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