System for processing semiconductor components and method for processing semiconductor components

Abstract

System (100) for processing semiconductor devices, comprising: a radiant energy source (102); a carrier (108) for supporting a first package component (120); a tool (112) arranged between the carrier (108) and the radiant energy source (102), wherein the tool (112) comprises a clamping device configured to be clamped to the carrier (108) and to hold a second package component (130) in a desired position above the first package component (120), wherein the clamping device comprises a plurality of openings (114) configured to hold the second package component (130) above the carrier (108) and on the first package component (120), wherein the second package component (130) is disposed within one of the plurality of openings (114) of the clamping device above the first package component (120); and a cooling device (110) near the carrier (108) for lowering the temperature of the first package component (120) by means of a liquid coolant or a liquid cooling substance.

Description

BACKGROUND

[0001] Semiconductor devices are used in a wide variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic equipment. Semiconductor devices are typically manufactured by sequentially depositing insulating or dielectric layers, conductive layers, and semiconducting layers of material over a semiconductor substrate and patterning the different material layers using lithography to form circuit components and elements thereon. Dozens or hundreds of integrated circuits are typically fabricated on a single semiconductor wafer. The individual chips are singulated by sawing the integrated circuits along a scribe line. The individual chips are then encapsulated separately, for example, in multi-chip modules or in other types of packages.

[0002] In some integrated circuit encapsulation processes, component dies or packages are packaged onto package substrates containing metal interconnects used to route electrical signals between opposite sides of the package substrates. The component dies may be flip-chip bonded to one side of a package substrate, and a reflow process may be performed to melt solder bumps that interconnect the dies and the package substrates.

[0003] US 5 447 886 A, US 2009 / 0137084 A1 and US 6 344 407 B1 describe conventional methods and apparatus for processing semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] The invention relates to a system for processing semiconductor devices according to claim 1, and to a method for processing a semiconductor device according to claim 14.

[0005] Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying figures. It should be noted that, in accordance with common industry practice, various features are not drawn to scale. Rather, the dimensions of the various features may be arbitrarily exaggerated or reduced to clarify the discussion. Fig. 1 is a block diagram of a system for processing semiconductor devices according to some embodiments. Fig. 2 is a block diagram of a system for processing semiconductor devices according to some embodiments. Fig. 3 is a block diagram of a system for processing semiconductor devices according to some embodiments. Fig. 4, 5 and 7 to 11 illustrate cross-sectional views, and Fig. 6 shows a top view of a method for processing semiconductor devices at various stages according to some embodiments. Fig. 12 is a flowchart of a method of processing a semiconductor device according to some embodiments. DETAILED DESCRIPTION

[0006] Some embodiments of the present disclosure relate to systems for processing semiconductor devices and methods for processing semiconductor devices using the systems. In some embodiments, which will be described in more detail herein, the systems include a cooling device for lowering the temperature of a package component after a solder reflow process for semiconductor devices.

[0007] We first turn Fig. 1, which shows a block diagram of a system 100 for processing semiconductor devices according to some embodiments. The system 100 includes a radiant energy source 102 and a carrier 108. The system 100 includes a tool 112 that can be disposed between the carrier 108 and the radiant energy source 102. The system 100 also includes a cooling device 110 proximate the carrier 108.

[0008] The radiant energy source 102 is configured to emit radiant energy 104 toward the carrier 108; for example, toward the tool 112 and a package component 130 disposed above the carrier 108. The radiant energy source 102 includes, in some embodiments, an infrared lamp 106. The radiant energy source 102 includes, in some embodiments, a plurality of infrared lamps 106, as shown in Fig. 1. The radiant energy source 102 may alternatively include other types of radiant energy emitting devices.

[0009] The tool 112 includes a plurality of openings 114 designed to hold a package component over the carrier 108. For example, in Fig. 1, a first package component 120 is disposed over the carrier 108, and the tool 112 is disposed over the first package component 120. A plurality of second package components 130 are disposed within the openings 114 of the tool 112 over the first package component 120. For example, in some embodiments, the tool 112 includes a jig or a cover that can be used in a solder reflow process or a solder bonding process to hold the second package components 130 in a desired position over the first package component 120 during the solder reflow or bonding process. The openings 114 of the tool 112, according to some embodiments, can, for example, include a dimension that—in a plan view—is substantially the same as, or slightly larger than, the size of the second package components 130.For example, according to some embodiments, the plurality of openings 114 of the tool 112 are configured to support a plurality of the second package components 130 on the first package component 120 during and after a eutectic material bonding process or solder bonding process.

[0010] In some embodiments, described in more detail herein, the radiant energy source 102 is configured to increase a temperature of the second package components 130 to reflow a eutectic material disposed between the plurality of second package components 130 and the first package component 120, and / or the radiant energy source 102 is configured to maintain a temperature of the second package components 130 while the cooling device 110 reduces the temperature of the first package component 120 as the eutectic material solidifies. In some embodiments, also described in more detail herein, reflowing the eutectic material and solidifying (e.g., resolidifying) the eutectic material include bonding the second package components 130 to the first package component 120.

[0011] The cooling device 110 is used to lower the temperature of the first package component 120 after a reflow process of the eutectic material. For example, a eutectic material (see the Fig. 9) may be disposed between the first package component 120 and the second package components 130, and the eutectic material is reflowed by exposing the second package components 130 to radiant energy 104 from the radiant energy source 102. In some embodiments described in more detail herein, following the reflow process, the cooling device 110 is activated to cool the first package component 120 disposed over the carrier 108, thereby reducing or eliminating adverse effects of a coefficient of thermal expansion (CTE) mismatch between the first package component 120 and the second package components 130.

[0012] The cooling device 110, in some embodiments, includes a cooling module disposed near the carrier 108, as shown in Fig. 1. The cooling module, in some embodiments, includes a coolant. The coolant, in some embodiments, may include, for example, water, a liquid fluorinated hydrocarbon such as Freon™ from EI du Pont de Nemours and Company, liquid nitrogen, or other materials. The cooling module, in some embodiments, may include a device configured to move air or gas near the support 108, such as a fan. The cooling device 110, as another example not shown, may include a cooling coil filled with a liquid that is circulated and returned to a refrigeration module. Alternatively, the cooling module and the coolant of the cooling device 110 may also include other materials or devices.

[0013] Fig. 2 is a block diagram of a system 100 for processing semiconductor devices according to some embodiments. The system 100 includes a controller 116. The controller 116 is in communication with the cooling device 110 and the radiant energy source 102. The controller 116 may, for example, be electrically and / or mechanically coupled to the cooling device 110 and / or the radiant energy source 102. The controller 116 is configured to monitor, control, and / or adjust the heating and cooling temperatures of the radiant energy source 102 and the cooling device 110, respectively. In some embodiments, the controller 116 includes, for example, a temperature analyzer and a programmable logic controller (PLC) from Siemens Corporation. Alternatively, the controller 116 may have other or alternative functions, and other types of equipment and equipment from other manufacturers may also be used.

[0014] In the Fig. 2, the cooling device 110 is placed directly next to and in contact with the carrier 108. Alternatively, the cooling device 110 may be placed close to the carrier 108, as shown in Fig. 1. The Fig. The controller 116 shown in Figure 2 may also be used in the embodiments of the system 100 shown in Figures Fig. 1 and Fig. 3 shown.

[0015] Fig. 3 is a block diagram of a system 100 for processing semiconductor devices, according to some embodiments. The cooling device 110 includes a reservoir 140 for holding a cooling substance 148 and a dispensing means 142 coupled to the reservoir 140. The reservoir 140 is configured, in some embodiments, to hold liquid nitrogen, water, or other cooling agents. For example, in some embodiments, the cooling substance 148 comprises liquid nitrogen or water. The dispensing means 142 may include a tube or pipe 144 coupled between the reservoir 140 and a nozzle 146, or another type of controlled orifice disposed at the end of the tube or pipe 144. Alternatively, the dispensing means 142 may include other devices and / or configurations.

[0016] In some embodiments, the carrier 108, the tool 112, the radiant energy source 102 and the cooling device 110 comprise the Fig. 1, Fig. 2 and Fig. 3, components of the systems 100. The systems 100 may include enclosed systems contained within a chamber, or the systems 100 may be unenclosed. The systems 100 may also include other functional elements. The solder reflow systems 100 may include static systems, wherein the carrier 108 remains stationary during the reflow process. Alternatively, the systems 100 may include a conveyor belt (not shown), and the carrier 108 may be disposed on the conveyor belt. The carrier 108, with the first package components 120, the second package components 130, and the tool 112 disposed thereon, are moved by the conveyor belt, and the systems 100 may include one or more radiant energy sources 102 that expose the tool 112 and the second package components 130 to the radiant energy 104. The systems 100 may alternatively include other configurations.

[0017] The Fig. 4, 5 and 7 to 11 illustrate cross-sectional views, and Fig. 6 shows a top view of a method for processing semiconductor devices at various stages according to some embodiments of the present disclosure. In Fig. 4, a carrier 108 is provided. The carrier 108 comprises, for example, a thickness of about 5 mm to about 10 mm of an Fe alloy, an Al alloy, or combinations or multiple layers thereof. The carrier 108 and also the tool 112 (see Fig. 6 and Fig. 7) may, for example, comprise a length and a width in a plan view of approximately 300 mm × approximately 700 mm. Alternatively, the carrier 108 (and also the tool 112) may comprise other materials and dimensions. In some embodiments, the carrier 108 comprises a board or a wafer holder configured to support a first package component 120 (see Fig. 5).

[0018] In Fig. 5, a package component 120 is provided. The package component 120 is arranged on the carrier 108. The package component 120, in some embodiments, comprises an encapsulation device. The package component 120 is also referred to herein as a first package component 120, a plurality of first package components 120, or a strip of a plurality of first package components 120. In some embodiments, the first package component 120 comprises an encapsulation device comprising an insertion substrate comprising via holes, other circuitry, and / or one or more redistribution layers (RDLs) arranged thereon or formed therein (not shown). In other embodiments, the first package component 120 comprises an encapsulation device comprising an organic material.The first package component 120 may include a laminate substrate containing a plurality of dielectric films laminated together. In some embodiments, at least one of the dielectric films of the first package component 120 comprises a material with an extra-low dielectric constant (ELC) that is less than a dielectric constant of silicon dioxide. In further embodiments, the first package component 120 includes a plurality of integrated circuit chips. The first package component 120 may alternatively include other materials and device types.

[0019] In some embodiments, the first package component 120 comprises a strip of a plurality of the first package components 120. For example, the strip of the plurality of first package components 120 may be in the Fig. 6 may comprise substantially the same shape and / or dimensions as the tool 112. For example, the strip contains one of the first package components 120 near each of the openings 114 of the tool 112. The first package components 120 may be evenly distributed throughout the strip and may have a pattern of grouping. In other embodiments, the first package components 120 may be distributed as multiple groups, wherein the spacing between the groups is greater than the intra-group spacing between first package components located in the same group, as for the openings 114 of the tool 112 in the plan view in Fig. 6. In some embodiments, the individual components of the first package 120 are later singulated along scribe lines 124 of the strip of first package components 120 after a solder reflow process.

[0020] The strip of first package components 120 includes several regions where second package components 130 are bonded to the first package components 120, which are described in more detail below. For example, the first package components 120 include several contact pads 122 formed thereon. Only three regions containing five contact pads 122 are shown in the Fig. 5 and 7 to 11; alternatively, in some embodiments, dozens, hundreds, or more contact pads 122 may be disposed in each region where a second package component 130 is bonded to the first package component 120. The contact pads 122 include electrical connections and may include, for example, pre-solder regions, metal pads, non-reflowable metal bumps, or metallic features. The contact pads 122 may, in some embodiments, be coupled to bond pads on an opposite side of the first package components 120 (not shown) by electrical features, such as metal lines and vias disposed within the first package components 120 (also not shown).

[0021] A tool 112, which is used in this text with reference to the Fig. 1 to 3 is provided as shown in a plan view in Fig. 6. An example of a pattern for the openings 114 is shown. The tool 112, according to some embodiments, comprises a metal or metal alloy, such as copper, aluminum, steel, or the like; one or more ceramic materials; or a combination or multiple layers thereof. The tool 112, in some embodiments, comprises, for example, a thickness of about 1 mm to about 3 mm. Alternatively, the tool 112 may also comprise other materials and dimensions.

[0022] The tool 112 is configured to hold a package component above the carrier 108 within one of the openings 114. For example, according to some embodiments, the openings 114 may be shown in a top view (see Fig. 8) comprise a dimension that is substantially the same size as, or slightly larger than, the size of a second package component 130.

[0023] The tool 112 is arranged or placed over the first package component 120 arranged on the carrier 108, as in Fig. 7. The openings 114 of the tool 112 are arranged over the first package components 120 of the strip of first package components such that the first package components 120 are exposed. Other portions of the tool 112, ie, the solid portions, are arranged over and near the scribe line regions 124 of the strip of first package components 120 between the openings 114.

[0024] The tool 112 may, in some embodiments, be arranged directly adjacent to, and in contact with, the first package component 120, as shown in Fig. 7. The tool 112 may, in some embodiments, be clamped to the carrier 108 or another object, for example. In other embodiments, the tool 112 may be disposed proximate to the first package component 120, but not in contact with the first package component 120 (not shown). The openings 114 of the tool 112 expose the contact pads 122 of the first package components 120. The contact pads 122 of the first package components 120 are exposed through the openings 114 in the tool 112, allowing access to the contact pads 122 for a bonding process.

[0025] A package component 130 is, in some embodiments, disposed within at least one of the plurality of openings 114 of the tool 112 disposed over the first package component 120, as shown in Fig. 8. The package components 130 are also referred to herein as second package components 130. In some embodiments, a plurality of second package components 130 are arranged within the plurality of openings 114 of the tool 112, with one of the plurality of second package components 130 being placed within each of the plurality of openings 114 of the tool 112, as shown in Fig. 8. The second package components 130 are, for example, placed over the first package components 120 in a one-to-one correspondence. In other embodiments, second package components 130 are placed within only some of the plurality of openings 114 of the tool 112 (not shown). In further embodiments, two or more second package components 130 may be disposed within each opening 114 of the tool 112 (not shown).

[0026] Portions of the tool 112 surround the second package components 130. In some embodiments, the portions of the tool 112 securely surround the second package components 130 to hold the second package components 130 in place during processing, such as performing a solder reflow or bonding process of the semiconductor devices.

[0027] In some embodiments, the second package components 130 comprise semiconductor chips or semiconductor devices. In some embodiments, the semiconductor chips may comprise, for example, complementary metal oxide (CMOS) devices. Alternatively, the semiconductor chips may comprise other types of integrated circuits. In other embodiments, the second package components 130 may comprise package substrates. Alternatively, the second package components 130 may comprise other types of devices. In some embodiments, the second package components 130 are, for example, flip-chip bonded to the first package components 120.

[0028] The first package components 120 are also referred to herein as second package components, for example, in some of the claims. Similarly, the second package components 130 are also referred to herein as first package components, for example, in some of the claims. The package components 120 and 130 are referred to as "first" or "second" depending on the order of their mention in some of the claims.

[0029] The second package components 130 each contain a workpiece 131. The workpiece 131 may contain a semiconductor substrate comprising silicon or other semiconductor materials and may, for example, be covered by an insulating layer. The workpiece 131 may also contain other active components or circuits (not shown). The workpiece 131 may, for example, comprise silicon oxide over single-crystal silicon. The workpiece 131 may also contain other conductive layers or other semiconductor elements, such as transistors, diodes, etc. For example, compound semiconductors, such as GaAs, InP, Si / Ge, or SiC, may be used instead of silicon. The workpiece 131 may, for example, comprise a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate.

[0030] The second package components 130 include a plurality of contact pads 132 arranged on one side of the workpiece 131. In some embodiments, the plurality of contact pads 132 comprise a similar or substantially the same footprint as the contact pads 122 of the first package components 120. The contact pads 132 of the second package components 130 are formed using a system 100 described in the Fig. 1, Fig. 2 or Fig. 3, bonded to the contact pads 122 of the first package components 120 to establish an electrical and mechanical connection between the second package components 130 and the first package components 120, according to some embodiments described in more detail below.

[0031] We turn again Fig. 8, where a eutectic material 134 is disposed between the contact pads 122 of the first package components 120 and the contact pads 132 of the second package components 130. The eutectic material 134 comprises solder regions disposed between the first package components 120 and the second package components 130. For example, Fig. 8, the second package components 130 include a eutectic material 134 disposed over the contact pads 132 or formed on the contact pads 132. Alternatively, the eutectic material 134 may be disposed on the contact pads 122 of the first package components 120, or the eutectic material 134 may be disposed on both the contact pads 122 and the contact pads 132 (not shown).

[0032] The eutectic material 134 comprises a material configured to remelt at a predetermined elevated temperature or temperature range. If the temperature is lowered after raising the temperature of the eutectic material, the eutectic material 134 resolidifies, and a joint composed of the eutectic material 134 is formed between the contact pads 132 on the second package components 130 and the contact pads 122 on the first package component 120. The eutectic material 134 may, for example, comprise a conductive bump. In some embodiments, the eutectic material 134 comprises solder and may, for example, comprise a solder bump or a solder ball.

[0033] The use of the word "solder" herein includes both lead-based and lead-free solder materials, such as Pb-Sn compositions for lead-based solder; lead-free solder materials, including InSb; tin, silver, and copper ("SAC") compositions; and other eutectic materials that share a common melting point and form conductive solder joints in electrical applications. For lead-free solder, SAC solder materials of various compositions can be used, such as SAC 105 (Sn 98.5%, Ag 1.0%, Cu 0.5%), SAC 305, and SAC 405. Lead-free eutectic material 134, such as solder bumps, can also be made from SnCu compounds without the use of silver (Ag). Alternatively, lead-free solder joints can contain tin and silver, Sn-Ag, without the use of copper.The eutectic material 134, in some embodiments, may be one of a group of conductive bumps formed as a grid, often referred to as a ball grid array (BGA). The eutectic material 134 may alternatively be arranged in other shapes and configurations. The eutectic material 134 may include spherical conductive interconnects and may also include non-spherical conductive interconnects, for example. The eutectic material 134 may be formed on the second package components 130 using a solder ball drop process, a solder bath process, a solder dip process, or other methods.

[0034] The tool 112 establishes and maintains the desired position of the second package components 130 at predetermined locations within the openings 114 such that the eutectic material 134 on the contact pads 132 of the second package components 130 is aligned and remains aligned with the contact pads 122 on the first package components 120. In some embodiments, an alignment process and / or a realignment process may be used to maintain proper alignment of the second package components 130 with the first package components 120 using alignment fixtures and / or alignment marks on the first package components 120, the tool 112, and / or the second package components 130 (not shown).

[0035] Next, a process is performed on the second package components 130 as shown in Fig. 9. In some embodiments, the process performed is a reflow process or solder reflow process performed with eutectic material 134. The reflow process causes the eutectic material 134 to reflow, so that the second package components 130 are bonded to the respective underlying first package components 120. In some embodiments, the reflow process is performed using the radiant energy source 102, which includes a convection reflow device that includes at least one IR energy source, such as an IR lamp 106 (see Fig. 1, Fig. 2 or Fig. 3), or other types of IR radiation sources. The reflow process involves heating the eutectic material 134 to a temperature above the melting temperature of the eutectic material 134, thereby causing the eutectic material 134 to become molten.

[0036] In some embodiments, the eutectic material 134 is remelted using the radiant energy source 102, as shown in Fig. 9, by activating the radiant energy source 102 to emit radiant energy 104. The radiant energy 104 is directed toward the second package components 130. In some embodiments, emitting the radiant energy 104 from the radiant energy source 102 for the purpose of reflowing the eutectic material 134 comprises raising a temperature of the second package components 130 to a temperature of about 240°C to about 260°C. In other embodiments, irradiating the second package components 130 with the radiant energy 104 comprises raising a temperature of the second package components 130 to a temperature of about 217°C or more. Alternatively, other temperatures may be used for the reflow process with the eutectic material 134.The second package components 130 absorb the radiation energy 104, causing the underlying eutectic material 134 to reach a melting or reflow temperature. The tool 112 holds the second package components 130 and prevents them from moving while the eutectic material 134 is molten.

[0037] The process of irradiating with radiant energy 104 continues for a predetermined period of time sufficient to form good solder joints composed of the eutectic material 134. For example, in some embodiments, the radiant energy source 102 may be activated or implemented for a period of time from about 0.8 microminutes to about 100 microminutes. Alternatively, other periods of irradiation with the radiant energy 104 may be used.

[0038] Irradiating the tool 112 and the second package components 130 with the radiant energy 104 includes remelting the eutectic material 134 disposed on each of the plurality of second package components 130, for example, disposed over the contact pads 132. After the end of the reflow process, the eutectic material 134 is cooled and at least substantially or completely solidified.

[0039] According to some embodiments of the present disclosure, while the eutectic material 134 cools, the cooling device 110 is activated to cool the first package components 120, as shown in Fig. 10. The cooling of the first package components 120 by the cooling device 110 is indicated by the arrows 150 in Fig. 10. Cooling the first package components 120 includes, for example, in some embodiments, lowering a temperature of the first package components 120 to a temperature of about 100°C or less. In other embodiments, the temperature of the first package components 120 is lowered to a temperature of about 80°C or less, as another example. The temperature is maintained at the reduced temperature, for example, in some embodiments, until the eutectic material 134 substantially or completely resolidifies. Alternatively, other temperatures may be used.

[0040] In some embodiments, while the cooling device 110 is activated to cool the first package components 120, the radiant energy source 102 is also activated to expose the second package components 130 to the radiant energy 104' while the first package components 120 are cooled, as in Fig. 10 in outline (e.g., in dashed lines). The radiant energy source 102 can be activated to emit an amount of radiant energy 104' to maintain a temperature of the second package components 130, for example, at a temperature of approximately 180°C or less. Alternatively, other temperatures may be used.

[0041] Cooling the first package components 120, or both cooling the first package components 120 and heating the second package components 130, during the resolidification of the eutectic material 134 between the first package components 120 and the second package components 130 advantageously prevents damage, such as delamination of various material layers of the first package components 120, which in some embodiments may include organic materials or ELK materials. Cooling the first package components 120 also facilitates cooling the eutectic material 134 to form resolidified eutectic bonds between the first package components 120 and the second package components 130.

[0042] The Fig. For example, the controller 116 shown in Figure 2 is implemented in some embodiments to control the heating and cooling processes used in the Fig. 9 and Fig. 10, to monitor, regulate and control.

[0043] After the Fig. 10, the bonds of the resolidified eutectic material 134 result in the electrical and mechanical bonding of the second package components 130 to the first package components 120. The second package components 130 are thus bonded to the underlying first package components 120.

[0044] After the reflow and cooling processes of the eutectic material 134, the tool 112 is removed, and the strip of first package components 120 is singulated along scribe lines 124 between adjacent ones of the plurality of second package components 130. The singulation of the strip of first package components 120 includes forming a plurality of encapsulated semiconductor devices 160, as shown in Fig. 11. The encapsulated semiconductor devices 160 may include encapsulated semiconductor chips, stacked chips, systems-on-a-chip (SOCs), wafer-level package (WLP) devices, other types of devices, and / or combinations thereof, according to some embodiments.

[0045] For example, in embodiments where the first package components 120 comprise packaging substrates and the second package components 130 comprise semiconductor chips, or where the first package components 120 comprise semiconductor chips and the second package components 130 comprise packaging systems, the encapsulated semiconductor chips 160 comprise encapsulated semiconductor chips. The encapsulated semiconductor chips may, for example, comprise wafer-level package (WLP) devices in some embodiments.

[0046] In embodiments where the first package components 120 comprise semiconductor chips and the second package components 130 comprise semiconductor chips, encapsulated semiconductor devices 160 comprising stacked chips are formed. In embodiments where the first package components 120 comprise certain types of semiconductor chips (also not shown) configured to function together with the second package components 130, which also comprise semiconductor chips, as a system, encapsulated semiconductor devices 160 comprising SOCs are formed.

[0047] Fig. 12 is a flowchart 170 of a method for processing a semiconductor device according to some embodiments. In step 172, a first package component 120 is arranged on a carrier 108 (see also Fig. 5). In step 174, a tool 112 is provided which includes a plurality of openings 114 ( Fig. 6). In step 176, one of the openings 114 of the tool 112 is positioned over the first package component 120 ( Fig. 7). In step 178, a second package component 130 is placed within the opening 114 of the tool 112 over the first package component 120 ( Fig. 8). In step 180, the second package component 130 is irradiated with radiation energy 104 to remelt a eutectic material 134 disposed between the first package component 120 and the second package component 130 ( Fig. 9). In step 182, the first package component 120 is cooled using a cooling device 110 ( Fig. 10).

[0048] Some embodiments of the present disclosure include novel systems 100 that include the cooling apparatus 110 described herein. Other embodiments include methods of processing semiconductor devices using the system 100. Some embodiments of the present disclosure also include encapsulated semiconductor devices 160 processed using the novel systems 100 and methods described herein.

[0049] Advantages and benefits of some embodiments of the disclosure include providing novel methods and systems 100 for eutectic materials 134, resulting in improved process control and a reduced risk of damage to the material layers of the first package component 120. The first package components 120 may include organic and / or ELK material, and reducing the temperature of the first package substrates 120 during the solidification of the eutectic material 134 prevents damage to the organic and ELK materials of the first package components 120 from the reflow process of the eutectic material 134.Embodiments of the present disclosure provide novel tool settings wherein the temperature of the first package component 120 is reduced during solidification of the eutectic material 134, reducing or avoiding failures due to ELK material delamination of the first package components 120 during and after solder reflow processes. For example, experimental results demonstrated a greater than about 75% reduction in ELK material stress by lowering the temperature of the first package component 120 during solidification of the solder (e.g., the eutectic material 134).

[0050] Cooling the first package components 120 using the cooling device 110 also assists in cooling the eutectic material 134 to form resolidified eutectic bonds between the first package components 120 and the second package components 130, saving time and money. Furthermore, the novel systems 100 and process flows described herein can be easily implemented in semiconductor device processing systems and process flows.

[0051] According to some embodiments of the present disclosure, a system for processing semiconductor devices includes a radiant energy source, a carrier, and a tool that can be disposed between the carrier and the radiant energy source. The tool includes openings configured to hold a package component above the carrier. The system includes a cooling device proximate the carrier.

[0052] According to other embodiments, a system for processing semiconductor devices includes a radiant energy source, a carrier, and a tool that can be disposed between the carrier and the radiant energy source. The tool includes a plurality of openings configured to hold a package component above the carrier. The system includes a cooling device proximate the carrier and a controller in communication with the cooling device and the radiant energy source.

[0053] According to other embodiments, a method of processing a semiconductor device includes: disposing a first package component on a carrier, providing a tool comprising a plurality of openings, and disposing one of the plurality of openings of the tool over the first package component. A second package component is disposed within the one of the plurality of openings of the tool over the first package component. The second package component is irradiated with radiant energy to reflow a eutectic material disposed between the first package component and the second package component. The first package component is cooled using a cooling device.

Claims

[1] A system (100) for processing semiconductor devices, comprising: a radiant energy source (102); a carrier (108) for supporting a first package component (120); a tool (112) arranged between the carrier (108) and the radiant energy source (102), wherein the tool (112) comprises a clamping device configured to be clamped to the carrier (108) and to hold a second package component (130) in a desired position above the first package component (120), wherein the clamping device comprises a plurality of openings (114) configured to hold the second package component (130) above the carrier (108) and on the first package component (120), wherein the second package component (130) is disposed within one of the plurality of openings (114) of the clamping device above the first package component (120); and a cooling device (110) near the carrier (108) for lowering the temperature of the first package component (120) by means of a liquid coolant or a liquid cooling substance. [2] The system of claim 1, further comprising a controller (116) in communication with the cooling device (110) and the radiant energy source (102). [3] The system of claim 1, wherein the cooling device comprises a reservoir (140) for a cooling substance (148) and a dispensing means (142) coupled to the reservoir (140). [4] The system of claim 3, wherein the reservoir (140) is configured to contain liquid nitrogen or water. [5] The system of claim 1, wherein the cooling device (110) comprises a fan (146) configured to move air or gas near the support (108). [6] The system of claim 1, wherein the cooling device (110) comprises a cooling module. [7] The system of claim 6, wherein the cooling module contains a coolant. [8] The system of claim 2, wherein the radiant energy source (102) comprises an infrared lamp (106). [9] The system of claim 2, wherein the carrier (108) comprises a board or a wafer holder configured to support the first package component (120). [10] The system of claim 9, wherein the carrier (108) is configured to support a plurality of first package components (120), and wherein the plurality of openings (114) of the tool (112) are configured to support a second package component (130) over each of the plurality of first package components (120) during a eutectic material bonding process. [11] The system of claim 10, wherein the cooling device (110) is configured to reduce a temperature of the first package components (120) after the eutectic material bonding process. [12] The system of claim 11, wherein the cooling device (110) is configured to reduce the temperature of the first package components (120) while a eutectic material (134) disposed between the plurality of second package components (130) and the first package components (120) solidifies. [13] The system of claim 12, wherein the radiant energy source (102) is configured to increase a temperature of the second package components (130) to remelt a eutectic material (134) disposed between the plurality of second package components (130) and the first package components (120), or wherein the radiant energy source (102) is configured to maintain a temperature of the second package components (130) while the cooling device (110) reduces the temperature of the first package components (120) as the eutectic material (134) solidifies. [14] A method (170) for processing a semiconductor device, the method comprising: Arranging (172) a first package component (120) on a carrier (108); providing (174) a tool (112) comprising a plurality of openings (114); Arranging (176) one of the plurality of openings (114) of the tool (112) over the first package component (120); disposing (178) a second package component (130) within the one of the plurality of openings (114) of the tool (112) over the first package component (120); Irradiating (180) the second package component (130) with radiant energy (104) to remelt a eutectic material (134) disposed between the first package component (120) and the second package component (130); and Cooling (182) the first package component (120) with the aid of a cooling device (110) by means of a liquid coolant or a liquid cooling substance. [15] The method of claim 14, wherein irradiating (180) the second package component (130) with the radiant energy (104) comprises raising a temperature of the second package component (130) to a temperature of 217°C or more. [16] The method of claim 14, wherein cooling (182) the first package component (120) comprises lowering a temperature of the first package component (120) to a temperature of 100°C or less. [17] The method of claim 14, further comprising irradiating the second package component (130) with radiant energy (104) during cooling (182) of the first package component (120). [18] The method of claim 17, wherein irradiating the second package component (130) with radiant energy (104) while cooling (182) the first package component (120) comprises maintaining a temperature of the second package component (130) at a temperature of 180°C or less. [19] The method of claim 14, wherein cooling (182) the first package component (120) comprises resolidifying the eutectic material (134), and wherein remelting the eutectic material (134) and resolidifying the eutectic material (134) comprise bonding the second package component (130) to the first package component (120).

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