Optoelectronic component and method for manufacturing an optoelectronic component

Abstract

Optoelectronic component (100), comprising: • a metal substrate (102) with a surface area (120), • an electrically conductive planarization layer (108) on the surface (120) of the metal substrate (102), wherein the planarization layer (108) has a surface (130), • an organically functional layered structure (110) on or above the surface (130) of the planarization layer (108); and • a transparently formed electrode layer (112) on or above the organically functional layer structure (110); • wherein the roughness of the surface (130) of the planarization layer (108) is less than the roughness of the surface (120) of the metal substrate (102), and wherein the surface of the metal substrate (102) and / or the planarization layer (108) are designed to scatter light.

Description

[0001] The invention relates to a light-emitting component and a method for manufacturing a light-emitting component.

[0002] The following publications concern optoelectronic components: CH 709 370 A1, DE 10 2012 201 457 A1, DE 10 2011 005 612 A1, DE 10 2014 102 256 A1.

[0003] A conventional, light-emitting component (see Fig. 5), for example, an OLED 500, can have an anode 506 and a cathode 510 with an organic functional layer system 508 between them. The organic functional layer system 508 can have one or more emitter layer(s) in which electromagnetic radiation is generated, one or more charge-generating layer structures consisting of two or more charge-generating layer(s) (CGL) for charge-generating layer generation, as well as one or more electron-blocking layers, also referred to as hole transport layers (HTL), and one or more hole-blocking layers, also referred to as electron transport layers (ETL), to direct the current flow.

[0004] In some applications, a steel foil 502 is used as a substrate for the OLED 500. A planarization 504 is first applied to the steel foil 502 by screen printing or inkjet printing. This planarization is conventionally necessary because the surface 520 of the steel foil is relatively rough, which impairs the stability of the organic materials, e.g., the organic functional layer system 508.

[0005] A silver layer is then vapor-deposited or printed onto the planar surface 504. The silver layer acts as a reflective anode 506 (anode mirror) for the OLED 500. In these applications, the cathode 510 is designed to be semi-transparent, allowing light to be coupled out of the OLED 500 through the cathode 510 during operation. The OLED is then encapsulated using a thin-film encapsulation 512 and provided with a scattering layer 514 to increase the proportion of coupled-out light and thus the efficiency of the OLED 500. Scattering particles 516 are arranged in a matrix 518 within the scattering layer 514.

[0006] The scattering particles 56 can potentially damage the OLED 500. Furthermore, the structured deposition of scattering particles 516 on the thin-film encapsulation 512 is difficult. Therefore, the production of such an OLED 500 is quite complex.

[0007] The object of the invention is to provide a highly efficient, scattering optoelectronic component and a method for its manufacture, wherein the substrate of the optoelectronic component is a metal substrate.

[0008] An optoelectronic device is provided, comprising a metal substrate with a surface. An electrically conductive planar layer is formed on the surface of the metal substrate, the planar layer itself having a surface roughness of lesser than that of the metal substrate. An organically functional layer structure is formed on or above the surface of the planar layer. A transparent electrode layer is formed on or above the organically functional layer structure. The surface of the metal substrate and / or the planar layer are light-scattering.

[0009] The planarization layer is formed directly on the surface of the metal substrate.

[0010] This allows scattering particles to be optionally incorporated into the encapsulation of organic light-emitting diodes (OLEDs), with approximately the same or identical efficiency. Furthermore, the structured formation of scattering centers can be facilitated, for example, by decoupling the structuring process from the subsequent manufacturing processes of the optoelectronic device. Additionally, the deposition of at least one layer can be eliminated, as the properties of different layers can be combined in the planarization layer and / or the metal substrate.

[0011] In a further development, the metal substrate has a second electrode layer and a metal support. The second electrode layer is arranged on the metal support. The surface of the second electrode layer forms the surface of the metal substrate. This makes it possible to adjust the electrical, thermal, and mechanical properties at the surface of the metal substrate essentially independently of the properties of the metal support.

[0012] In this advanced training course, the metal substrate is a steel sheet or a steel foil, for example, SUS steel. This allows the use of particularly cost-effective substrates.

[0013] In this advanced process, the planarization layer has a thickness greater than twice the roughness, for example Rz or Rq, of the metal substrate surface. This enables reliable planarization of the metal substrate surface.

[0014] In a further development, the planarization layer has scattering centers embedded in a matrix. This enables light scattering within the planarization layer and thus allows for simple adjustment of the light scattering to a predetermined level.

[0015] In a further development, the scattering centers are designed to be electrically conductive. This enables an improved electrical connection between the organic functional layer structure and the metal substrate.

[0016] In yet another advanced topic, the optoelectronic component is a light-emitting component.

[0017] In another aspect, a method for fabricating an optoelectronic component is provided. The method involves forming an electrically conductive planar layer on the surface of a metal substrate. The planar layer has a surface roughness that is lower than that of the metal substrate. The surface of the metal substrate and / or the planar layer are light-scattering. The method further involves forming an organically functional layer structure on or above the surface of the planar layer. Additionally, the method involves forming a transparent electrode layer on or above the organically functional layer structure.

[0018] In a further training course, the planarization layer is formed with scattering centers embedded in a matrix. This enables light scattering within the planarization layer and thus allows for simple adjustment of the light scattering to a predetermined level.

[0019] In a further training course, the planarization layer is formed using a paste, where the paste contains both the matrix material and the scattering centers. This enables simple and cost-effective production of the planarization layer.

[0020] In a further training course, the planarization layer is formed by arranging a material in particle form on or above the metal substrate, with the particles comprising the matrix material. This enables simple and cost-effective production of the planarization layer.

[0021] In a further development, the particles also exhibit scattering centers. This enables a simple and cost-effective production of the planarization layer.

[0022] In a further development, the planarization layer is also designed with cavities arranged between the particles of the matrix material and the scattering centers. This enables additional light scattering. Furthermore, the cavities can reduce thermal and mechanical stresses in the planarization layer.

[0023] In a further development, the metal substrate has a second electrode layer and a metal support. The second electrode layer is arranged on the metal support. The surface of the second electrode layer is the surface of the metal substrate. This makes it possible to adjust the electrical, thermal, and mechanical properties at the surface of the metal substrate essentially independently of the properties of the metal support.

[0024] In further training, the optoelectronic component is developed into a light-emitting component.

[0025] In various advanced training courses, the method for manufacturing the optoelectronic component exhibits the same characteristics as the optoelectronic component and vice versa.

[0026] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0027] They show: Fig. 1 a schematic sectional view of an embodiment of an optoelectronic component; Fig. 2 a schematic sectional view of an embodiment of an optoelectronic component; Fig. 3 a schematic sectional view of an embodiment of an optoelectronic component; Fig. 4. A flowchart of a method for manufacturing an optoelectronic component according to various embodiments; and Fig. 5 a schematic sectional view of a conventional optoelectronic component.

[0028] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments are shown for illustration purposes, illustrating how the invention can be implemented. Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way restrictive. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention. It is understood that the features of the various embodiments described herein may be combined with one another, unless specifically stated otherwise. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0029] An optoelectronic assembly can contain one, two, or more optoelectronic components. Optionally, an optoelectronic assembly can also contain one, two, or more electronic components. An electronic component can, for example, be an active and / or a passive component. An active electronic component can, for example, be a computing, control, and / or regulating unit and / or a transistor. A passive electronic component can, for example, be a capacitor, a resistor, a diode, or an inductor.

[0030] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber can be, for example, a solar cell. An electromagnetic radiation emitter can, in various embodiments, be an electromagnetic radiation emitting semiconductor component and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0031] Depending on various configurations, the light-emitting component (e.g., organic light-emitting component such as OLED) can be designed as a "top emitter".

[0032] The term "top emitter" or "top-emitting light-emitting device," as used herein, refers, for example, to a design that is transparent on the side facing away from the substrate (in other words, the top side) of the light-emitting device. In particular, the layers formed on or above the at least one functional layer of the light-emitting device (e.g., the electrode (top electrode) formed between the functional layer(s) and the barrier thin film, the barrier thin film, the intermediate layer, the top layer) can be transparent. A light-emitting device designed as a top emitter can therefore, for example, emit radiation generated in the functional layers (e.g., organic functional layers in an organic light-emitting device such as an OLED) onto the top side of the light-emitting device. A light-emitting component designed as a top emitter, according to various embodiments, can advantageously exhibit high light output and very low angular dependence of the radiation density. A light-emitting component according to various embodiments can advantageously be used for lighting applications, such as room luminaires.

[0033] The term "translucent" or "translucent layer" can be understood to mean that the layer is permeable to light, for example, to the light generated by the optoelectronic component. For instance, the term "translucent layer" can mean that essentially all the light coupled into the layer is also coupled out of the layer, with some of the light being scattered in the process. The term "transparent" or "transparent layer" can be understood to mean that the layer is permeable to light, whereby light coupled into the layer is also coupled out of the layer essentially without scattering or light conversion.

[0034] Fig. Figure 1 shows a schematic sectional view of an embodiment of an optoelectronic component 100 according to various embodiments.

[0035] The optoelectronic component 100 has a metal substrate 102 with a surface area 120.

[0036] An electrically conductive planarization layer 108 is formed on the surface 120 of the metal substrate 102. The planarization layer 108 has a surface area 130. The roughness of the surface 130 of the planarization layer 108 is lower than the roughness of the surface 120 of the metal substrate 102. The surface of the metal substrate and / or the planarization layer are light-scattering. The planarization layer 108 is formed directly on the surface 120 of the metal substrate 102.

[0037] For example, the metal substrate 104 is a steel sheet or foil, such as one made of SUS steel. Silver is directly vapor-deposited onto the metal substrate 104, forming the first electrode layer 106. A conductive transparent (scattering) layer is printed onto the silver, forming the planarization layer 108. This planarization layer 108 contains, for example, AZO or ITO particles, or is composed of them. The function of these particles is to scatter light passing through the planarization layer 108, establish an electrically conductive connection to the metal substrate 104, and provide a smooth surface for further layer growth. The layer should have a high refractive index, for example, greater than 1.7.Light scattering in the planarization layer 108 can be based on two possibilities, for example: Light scattering can occur at the rough surface of the metal support 104, and the AZO / ITO particles of the planarization layer 104 serve to achieve planarization. Alternatively, light scattering in the planarization layer can be achieved by adding particles of, for example, TiO2 or SiO2 to the AZO / ITO particles to facilitate scattering.

[0038] The further layers of the optoelectronic component are then formed on the smooth surface 130, for example by vapor deposition.

[0039] In one further embodiment, the planarization layer 108 has a thickness greater than twice the roughness, for example Rz or Rq, of the surface 120 of the metal substrate 102. In another embodiment, the metal substrate 102 comprises a first electrode layer 106 and a metal support 104. The first electrode layer 106 is arranged on the metal support 104. The surface of the first electrode layer 106 forms the surface 120 of the metal substrate 102. In another embodiment, the metal support 104 is a steel sheet or a steel foil. In yet another embodiment, the planarization layer 108 further comprises cavities. In yet another embodiment, the scattering centers 304 are electrically conductive.

[0040] An organically functional layer structure 110 is formed on or above the surface 130 of the planarization layer 108.

[0041] A transparent electrode layer 112 is formed on or above the organically functional layer structure 110.

[0042] In a further development, the optoelectronic component 100 is a light-emitting component 100.

[0043] Fig. Figure 2 shows a schematic sectional view of an optoelectronic component 100, which, for example, largely corresponds to the one in Fig. can correspond to the embodiment shown in 1.

[0044] The optoelectronic component 100 has the substrate 102 described above.

[0045] The active region is formed on the substrate 102. The active region has a first electrode layer comprising a first contact section 16, a second contact section 18, the first electrode layer 106, and the planarization layer 108.

[0046] The first electrode layer 106 and the planarization layer 108 are electrically isolated from the first contact section 16 by means of an electrical insulation barrier 21. The second contact section 18 is electrically coupled to the first electrode layer 106 and the planarization layer 108.

[0047] The first electrode layer 106 can be configured as an anode or a cathode. The first electrode layer 106 can be translucent or transparent. The first electrode layer 106 comprises an electrically conductive material, for example, a metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. For example, the first electrode layer 106 can comprise a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.The first electrode layer 106 can alternatively or additionally comprise: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0048] The planarization medium 104 is formed on the first electrode layer 106, above which the organic functional layer structure 110 is formed, which is configured, for example, to emit light. The organic functional layer structure 110 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 110 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode layer 106 and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity.The electron transport layer serves to transport the electrons. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 110 can comprise one, two, or more functional layer structure units, each of which has the aforementioned sublayers and / or further intermediate layers.

[0049] Above the organic functional layer structure 110, the second electrode layer 112 is formed, which can also be referred to as the second electrode 110. The second electrode 110 is electrically coupled to the first contact section 16. The second electrode 110 can be configured according to one of the embodiments of the first electrode layer 106, whereby the first electrode layer 106 and the second electrode 110 can be identical or different. The first electrode layer 106 serves, for example, as the anode or cathode of the active region. Correspondingly to the first electrode, the second electrode 110 serves as the cathode or anode of the active region.

[0050] A getter structure (not shown), which is part of the encapsulation structure 112, can be arranged on or above the active region 130. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances harmful to the active region.

[0051] An encapsulation layer 24 of the active region is formed over the second electrode 110 and partially over the first contact section 16 and partially over the second contact section 18, encapsulating the active region. The encapsulation layer 24 is part of the encapsulation structure 118 and can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, in particular against water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the substrate 102 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0052] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0053] Above the encapsulation layer 24, an adhesive layer 36 is formed, which is part of the encapsulation structure 118. The adhesive layer 36 comprises, for example, an adhesive, such as a laminating adhesive, a varnish, and / or a resin. The adhesive layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles.

[0054] A cover body 38, which is also part of the encapsulation structure 118, is formed above the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional light-emitting component 1, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the conventional light-emitting component 1.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the conventional light-emitting component 1.

[0055] Fig. Figure 3 shows a schematic sectional view of an optoelectronic component 100, which may, for example, largely correspond to an embodiment shown above.

[0056] In various advanced training courses, the planarization layer exhibits scattering centers embedded in a matrix. Fig. Figure 3 shows the scattering centers 304 embedded in the matrix 302 of the electrically conductive or electrically conductive planarization layer 108 according to various embodiments. The scattering centers 304 can be configured as light-scattering particles 304. The scattering centers 304 can be dielectric scattering centers, for example, made of a metal oxide such as silicon dioxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO), indium zinc oxide (IZO), gallium oxide (Ga2Ox), aluminum oxide, or titanium oxide. Other particles can also be suitable, provided they have a refractive index different from the effective refractive index of the matrix 302 of the planarization layer 108, for example, air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, such as gold, silver, iron nanoparticles, or the like, can be used as scattering centers 304.

[0057] Scattering centers 304 exhibit a second refractive index that is lower than the first. In this context, scattering centers 304 can also be referred to as low-refractive-index scattering centers 304. The second refractive index can, for example, be in the range of 1 to 1.7. Scattering centers 304 can, for example, have or be formed from microstructures or nanostructures. Microstructures are, for example, bodies that have at least one external dimension in the range of greater than or equal to 1 µm to less than 1 mm. The microstructures exhibit, for example, microparticles, microcavities, and / or micropores. Nanostructures are, for example, bodies that have at least one external dimension in the range of greater than or equal to 1 nm to less than 1 µm. The nanostructures exhibit, for example, nanoparticles, nanotubes, nanowires, nanopores, and / or nanodots.

[0058] If the scattering centers 304 are formed by cavities and / or pores in the support material 302, the cavities or pores may be filled with air or gas, or may contain a vacuum. The scattering centers 304 may be configured to exhibit no or only minimal absorption of the generated and scattered light. For example, the scattering centers 304 may contain or be composed of SiO2, and / or have a second refractive index of 1.5. The scattering centers 304 may be electrically conductive or electrically insulating.

[0059] The matrix 302, referred to as support material 302, is electrically conductive and can also be described as an intrinsically conductive matrix. The support material 302 can, for example, be a conductive, transparent material, such as a TCO (transparent conductive oxide), for example, ITO, or be composed of one. The support material 302 has a first refractive index. The first refractive index can, for example, be at least 1.7, or lie in a range from 1.7 to 2.7, for example, between 1.7 and 2.1, for example, 1.7 in the case of ITO.

[0060] The support material 302 can optionally be electrically insulating. The support material 302 can, for example, be transparent or translucent. The support material 302 can, for example, be a polymer or be composed of one. The polymer can, for example, be a high-index polymer with a refractive index of at least 1.7, for example, between 1.7 and 2.7, or between 1.7 and 2.1.

[0061] The scattering centers 304 can be configured, for example, according to the scattering centers 304 described above. The scattering centers 304 can be electrically conductive or electrically insulating. In the case of an electrically insulating support material 302, the scattering centers 304 can be electrically conductive. Alternatively, the planarization layer 108 can additionally have conductive elements embedded in the matrix 302. These conductive elements can also be referred to as electrically conductive additives. The conductive elements at least partially conduct the current. For example, the conductive elements can be embedded in the support material 302 in such a way that the electrical conductivity of the electrode layer 104 is determined by percolation of the conductive elements. In other words, the volume fraction of the conductive elements can exceed the percolation threshold.The conductive elements can, for example, have or be composed of microstructures or nanostructures that ensure electrical conductivity. These conductive elements may contain metals such as silver, gold, and / or copper, and / or organic materials such as polymers. The organic nature of the material can, for example, mean that it contains carbon. The conductive elements may also consist of, for example, micro- or nanowires such as silver nanowires, nanotubes such as carbon nanotubes, or electrically conductive nanoparticles such as metallic nanoparticles.

[0062] Fig. Figure 4 shows a flowchart of a process 400 for manufacturing an optoelectronic component, for example the light-emitting component described above.

[0063] Method 400 involves the formation 410 of an electrically conductive planar layer on the surface of a metal substrate. The planar layer has a surface and scattering centers embedded in a matrix. The roughness of the planar layer's surface is lower than the roughness of the metal substrate's surface. The surface of the metal substrate and / or the planar layer are designed to scatter light. The method further involves the formation 420 of an organically functional layer structure on or above the surface of the planar layer. The method also involves the formation 430 of a transparent electrode layer on or above the organically functional layer structure.

[0064] In a further training course, the planarization layer is formed with scattering centers embedded in a matrix. This enables light scattering within the planarization layer and thus allows for simple adjustment of the light scattering to a predetermined level.

[0065] In a further training course, the planarization layer is formed using a paste, where the paste contains both the matrix material and the scattering centers. This enables simple and cost-effective production of the planarization layer.

[0066] In a further training, the planarization layer is formed by arranging a material in particle form on or above the metal substrate, with the particles having the material of the matrix.

[0067] In a further training, the particles also exhibit the scattering centers.

[0068] In a further development, the planarization layer is also formed with cavities that are arranged between the particles of the matrix material and the scattering centers.

[0069] In this further development, the metal substrate has a second electrode layer and a metal support. The second electrode layer is arranged on the metal support. The surface of the second electrode layer is the surface of the metal substrate.

[0070] In further training, the optoelectronic component is developed into a light-emitting component.

[0071] In various advanced training courses, the method for manufacturing the optoelectronic component exhibits the same characteristics as the optoelectronic component and vice versa.

[0072] The invention is not limited to the specified embodiments. For example, the light-emitting component can comprise several or a plurality of light-emitting components and / or light-scattering layers. REFERENCE MARK LIST 100 optoelectronic components 102 Metal substrate 104 metal beams 106 first electrode layer 108 Planarization layer 110 organically functional layered structure 112 second electrode layer 16 first contact section 18 second contact section 21 electrical insulation barrier 24 Encapsulation layer 32 first contact area 34 second contact area 36 Adhesive layer 38 cover bodies 302 Matrix 304 distribution centers 400, 410, 420, 430 process steps 500 optoelectronic component 502 metal beams 504 Planarization medium 506 Anode 508 organic functional layer structure 510 Cathode 512 Thin-film encapsulation 514 Scatter layer 516 distribution centers 518 Matrix

Claims

[1] Optoelectronic component (100) comprising: • a metal substrate (102) with a surface area (120), • an electrically conductive planarization layer (108) on the surface (120) of the metal substrate (102), wherein the planarization layer (108) has a surface (130), • an organically functional layered structure (110) on or above the surface (130) of the planarization layer (108); and • a transparently formed electrode layer (112) on or above the organically functional layer structure (110); • wherein the roughness of the surface (130) of the planarization layer (108) is less than the roughness of the surface (120) of the metal substrate (102), and wherein the surface of the metal substrate (102) and / or the planarization layer (108) are designed to scatter light. [2] Optoelectronic device (100) according to claim 1, wherein the metal substrate (102) has a second electrode layer (106) and a metal support (104), wherein the second electrode layer (106) is arranged on the metal support (104), and the surface of the second electrode layer (106) forms the surface (120) of the metal substrate (102). [3] Optoelectronic component according to claim 2, wherein the metal support (104) is a sheet of steel or a foil of steel. [4] Optoelectronic device according to one of claims 2 or 3, wherein the planarization layer (108) has a thickness greater than 2 times the roughness of the surface (120) of the metal substrate (102). [5] Optoelectronic device (100) according to one of claims 1 to 4, wherein the planarization layer (108) has scattering centers (304) embedded in a matrix (302). [6] Optoelectronic component (100) according to claim 5, wherein the scattering centers (304) are electrically conductive. [7] Optoelectronic component (100) according to any one of claims 1 to 6, wherein the optoelectronic component (100) is a light-emitting component. [8] Method (400) for manufacturing an optoelectronic device comprising the method: • Forming (410) an electrically conductive planarization layer on the surface of a metal substrate, ◯ where the planarization layer has a surface, and ◯ where the roughness of the surface of the planarization layer is less than the roughness of the surface of the metal substrate, and ◯ wherein the surface of the metal substrate (102) and / or the planarization layer (108) is designed to scatter light; • Formation (420) of an organically functional layered structure on or above the surface of the planarization layer; and • Forming (430) a transparent electrode layer on or over the organic functional layer structure. [9] Method (400) according to claim 8, wherein the planarization layer is formed with scattering centers embedded in a matrix. [10] Method (400) according to claim 9, wherein the planarization layer is formed by means of a paste, the paste comprising the matrix material and the scattering centers. [11] Method (400) according to claim 10, wherein the planarization layer is formed by arranging a material in particle form on or above the metal substrate, wherein the particles comprise the material of the matrix. [12] Method (400) according to claim 11, wherein the particles further comprise the scattering centers. [13] Method (400) according to claim 12, wherein the planarization layer is further formed with cavities arranged between the particles of the matrix material and the scattering centers. [14] Method (400) according to any one of claims 8 to 13, wherein the metal substrate comprises a second electrode layer and a metal support, wherein the second electrode layer is arranged on the metal support, and the surface of the second electrode layer forms the surface of the metal substrate. [15] Method (400) according to any one of claims 8 to 14, wherein the optoelectronic component is designed as a light-emitting component.

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