Steaming device

Abstract

A vapor deposition device comprising: a vapor deposition chamber, Mask holding coils (20), and at least one set of mask transport reels (40), wherein the mask holding coils (20) have a first coil (21) and a second coil (22) arranged opposite each other, a mask arrangement area (30) is arranged between the first coil (21) and the second coil (22), and a first current is provided in the first coil (21) and a second current is provided in the second coil (22), such that a magnetic field generated in the mask arrangement area (30) has a homogeneous magnetic field strength, wherein each set of mask transport coils (40) has a third coil (41) and a fourth coil (42) arranged opposite each other, and the mask arrangement area (30) is arranged between the third coil (41) and the fourth coil (42), characterized by that an axis of the first coil (21), an axis of the second coil (22), an axis of the third coil (41) and an axis of the fourth coil (42) coincide.

Description

TECHNICAL AREA

[0001] Embodiments of the present invention relate to vapor deposition technologies, in particular to a vapor deposition device. BACKGROUND

[0002] Evaporation is a process of arranging a substance, which is to be formed into a film, in a vacuum, vaporizing / sublimating it, and depositing it onto the surface of a substrate or workpiece. Heating an evaporation material and coating it onto the substrate is called vacuum evaporation or vacuum coating. The vacuum coating process is widely used in the manufacturing of devices (such as display panels).

[0003] A mask is used to cover a specific area of ​​a glass substrate during the vapor deposition process of a display panel, allowing the vapor deposition material to be deposited in the uncovered area to form a film. Theoretically, one surface of the mask should be parallel to the glass substrate. In this case, the resulting vapor deposition should precisely match the mask and conform to the design.

[0004] In practice, however, a central area of ​​the mask will be significantly deformed because the mask edges are attached to a support frame, and the mask is ultrathin (only a few dozen micrometers thick) and subject to unbalanced forces. Under the influence of this deformation, the film formed on the glass substrate deviates from the expected state, resulting in poor deposition by the evaporation device. Furthermore, if the mask is subjected to a highly variable vertical force during the mounting process, it will impact the glass substrate at a very high speed, damaging both the substrate and the mask. Additionally, if the mask is subjected to a horizontal force, scratching of photospacers or lithospacers on the glass substrate may occur.

[0005] Other relevant techniques are also known from US 2007 / 0296324A1, which relates to a device and a method for demagnetizing a shadow mask; from JP H10-152776A, which discloses a support for a substrate and a method for carrying the substrate; from CN 105779933A, which relates to an alignment device and evaporation equipment; and from US 4963921A, which discloses a device for detachably holding a mask. SUMMARY

[0006] The objectives of embodiments of the present invention are to provide a vapor deposition device to avoid an undesirable phenomenon of the mask deforming because the central area is subject to unbalanced forces, and to solve a problem of the mask being subject to a force in the vertical and horizontal directions, thereby improving the vapor deposition effect of the vapor deposition device.

[0007] The problem is solved by the features of the independent claim. Advantageous further developments and preferred embodiments are the subject of the dependent claims.

[0008] Embodiments of the present invention provide a vapor deposition device comprising a vapor deposition chamber and mask-holding coils. The mask-holding coils have at least a first and a second coil arranged opposite each other, and a mask assembly area between the first and second coils. A first current is supplied in the first coil, and a second current is supplied in the second coil, so that a magnetic field with a homogeneous magnetic field strength is generated in the mask assembly area.

[0009] According to embodiments of the present invention, a magnetic field with a homogeneous magnetic field strength is generated in the mask assembly area by using mask holding coils, such that the central region of the mask, which is arranged in the mask assembly area, is in force equilibrium. Embodiments of the present invention solve a problem in existing vapor deposition devices, namely that the holding frame holds the mask at its edge, making deformation of the mask likely because the central region is subject to unbalanced forces, and thereby impairing the vapor deposition effect. An objective is achieved: to avoid the undesirable phenomenon of the central region of the mask being deformed due to unbalanced forces, and to improve the vapor deposition effect of the vapor deposition device.During a process of positioning the mask, which is provided by embodiments of the present invention, the force exerted on the mask changes slightly in the vertical direction and is almost zero in the horizontal direction, so that the mask will not hit the substrate at a very high speed, thereby avoiding damage to the mask and scratching of the photospacers or lithospacers. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1A is a schematic diagram showing an ideal structure of an existing vapor deposition device in a vapor deposition process; Fig. Figure 1B is a schematic diagram showing an actual structure of the existing vapor deposition device in the vapor deposition process; Fig. Figure 2 is a schematic diagram showing the internal structure of a vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to one embodiment; Fig. Figure 3 is a schematic diagram showing a setup for mask holding coils of the vapor deposition device according to a further embodiment of the invention. Fig. 4A and Fig. 4B are schematic diagrams showing a process of deriving a condition that must be met when a magnetic field with a homogeneous magnetic field strength is generated by the mask holding coils; Fig. 5A to 5C are schematic diagrams showing a magnetic field strength distribution of a Helmholtz coil obtained in the manner of a simulation; Fig. Figure 6 is a schematic diagram showing a setup of the vapor deposition device according to a further embodiment of the present invention; Fig. Figure 7 is a schematic diagram showing the process of deriving a condition that must be met when a magnetic field with a homogeneous magnetic field strength gradient is generated by the mask transport coils; Fig. Figures 8A to 8C are schematic diagrams showing a magnetic field strength distribution of an anti-Helmholtz coil obtained in the manner of a simulation; Fig. Figure 9 is a schematic diagram showing a setup of the vapor deposition device according to a further embodiment of the present invention; Fig. 10A to 10C are schematic diagrams showing an acceleration distribution of the mask in the vapor deposition device of Fig. 9, which is generated due to the presence of a magnetic field; Fig. Figure 11 is a schematic diagram showing a setup of the vapor deposition device according to a further embodiment of the present invention; Fig. Figure 12 is a schematic diagram showing a setup of the vapor deposition device according to a further embodiment of the present invention; Fig. Figure 13 is a schematic diagram showing a setup of the vapor deposition device according to a further embodiment of the present invention; Fig. Figure 14 is a schematic diagram showing an internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment; Fig. Figure 15 is a schematic diagram showing an internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment; Fig. Figure 16 is a schematic diagram showing an internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment; Fig. Figure 17 is a schematic diagram showing an internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment; Fig. Figure 18 is a schematic diagram showing the internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment; and Fig. Figure 19 is a schematic diagram showing an internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment. DETAILED DESCRIPTION

[0010] The invention will now be described in further detail in connection with the accompanying drawings and embodiments. It should be noted that the specific embodiments disclosed herein are intended to illustrate, rather than limit, the disclosure or the invention. It should also be noted that, for the sake of simplicity, the accompanying drawings show only parts related to the disclosure, but not exhaustively.

[0011] Fig. Figure 1A is a schematic diagram showing an ideal structure of an existing vapor deposition device in a vapor deposition process, and Fig. Figure 1B is a schematic diagram showing the actual structure of the existing vapor deposition device in the vapor deposition process. With reference to Fig. 1A and Fig. Figure 1B comprises the deposition apparatus, which includes a deposition chamber (not shown), a support frame 11, and a mask 12. The edges of the mask 12 are attached to the support frame 11. The mask 12 is positioned on one side of a glass substrate 13. A deposition source 14 is located on the opposite side of the mask 12 from the glass substrate 13. The mask 12 has a hollow structure, which shields a certain area 131 of the glass substrate 13 and leaves an area 132 of the glass substrate 13 open for deposition, so that the deposition material is deposited onto the area 132 to form a film after being dispensed from the deposition source 14. Comparing Fig. 1A with Fig. In 1B, only the central area of ​​the mask 12 is subject to gravity in the vertical direction (i.e., the Z-axis), since the edge of the mask 12 is fixed to the support frame 11. Under the influence of gravity, the mask 12 is significantly deformed, creating a gap between the mask 12 and the glass substrate 13. When the coating material is deposited onto the area 132 of the glass substrate 13 to form a film, a small amount of the coating material will be deposited in the gap between the mask 12 and the glass substrate 13, thus impairing the coating effect of the coating device.

[0012] If each film of a red, green, and blue pixel pattern is formed by vapor deposition using the existing vapor deposition device, the edge of one pixel unit on a display panel will overlap with the edge of another pixel unit due to the offset present in the vapor deposition process of each film, as described above. There is no doubt that the display's functionality will be impaired and the panel may even become unusable. Furthermore, if the mask is subjected to a force with large deviations in the vertical direction while being fixed by the vapor deposition device, it will impact the glass substrate at a very high speed, damaging both the glass substrate and the mask. Additionally, if the mask is subjected to a force in the horizontal direction, the photospacers on the glass substrate will also be scratched.

[0013] Fig. Figure 2 is a schematic diagram showing the internal structure of a vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to one embodiment. Referring to Fig. Figure 2 of the vapor deposition device comprises a vapor deposition chamber (not shown) and mask holding coils 20. The mask holding coils 20 have at least a first coil 21 and a second coil 22, which are arranged opposite each other. A mask arrangement area 30 is located between the first coil 21 and the second coil 22. A first current and a second current are supplied in the first coil 21 and the second coil 22, respectively, such that the magnetic field strength of a magnetic field generated in the mask arrangement area 30 is homogeneous.

[0014] Referring to Fig. 2 The vapor deposition device further optionally includes a mask 31 made of a ferromagnetic material. In the mask arrangement area 30, the ferromagnetic mask 31 is subject to an attractive force from the mask holding coils 20. Under the interplay of the attractive force and gravity, or under the interplay of the attractive force, the holding force exerted on the mask 31 by the mask holding coils 20, and gravity, every position of the mask 31 is in force equilibrium. Consequently, the undesirable phenomenon of the mask 31 being deformed due to unbalanced forces can be effectively prevented.

[0015] Optionally, the current directions of all coils contained in the mask-holding coils are the same as a first winding direction. The first winding direction can be clockwise or counterclockwise. Furthermore, the product of the current value of each coil contained in the mask-holding coils and the windings of each coil is equal. The axes of coils contained in the mask-holding coils coincide. For example, since the mask-holding coils are 20 in Fig. 2 only the first coil 21 and the second coil 22 have the direction of flow of the first current in the first coil 21 and the direction of flow of the second current in the second coil 22 both being the same as the first winding direction. As in Fig. As shown in Figure 2, the first winding direction is counterclockwise. The product of the first current in the first coil 21 and the windings of the first coil 21 is equal to the product of the second current in the second coil 22 and the windings of the second coil 22. The axis of the first coil 21 and the axis of the second coil 22 coincide.

[0016] Each coil contained within the mask-holding coils can be symmetrical or asymmetrical. If each coil within the mask-holding coils is symmetrical, it can be circular, polygonal, elliptical, or otherwise shaped. As in Fig. As shown in Figure 2, each of the first coil 21 and the second coil 22 is circular.

[0017] Fig. Figure 3 is a schematic diagram showing the structure for mask-holding coils of the vapor deposition device according to a further embodiment of the invention. Each coil contained in the mask-holding coils 20 can be arranged as shown in the diagram. Fig. 3. Be racetrack-shaped.

[0018] It should be noted that, since the shapes of the coils in the mask-holding coils 20 are different, different conditions must be met to generate a magnetic field with a homogeneous magnetic field strength in the mask arrangement area 30 through the mask-holding coils 20. Using the mask-holding coils 20, which have only a circular first coil 21 and a circular second coil 22, as an example below, the conditions that must be met to generate a magnetic field with a homogeneous field strength through the mask-holding coils 20 are derived. For the sake of simplicity, only a magnetic field generated at the axis of the second coil 22 by the mask-holding coils 22 is derived as an example.

[0019] Fig. 4A and Fig. Figure 4B shows schematic diagrams illustrating the process of deriving a condition that must be met to generate a magnetic field with a homogeneous magnetic field strength using the mask-holding coils. Referring to Fig. 4A is when a straight line, in which the axis of the second coil 22 lies as an axis Z, has the magnetic induction intensity B z1 ' of the magnetic field, which is formed at a point A on the axis (namely the axis Z) by the second coil 22, BZ1=μ0I1R12(ZA2+R12)3 / 2, where µ0 denotes the magnetic constant, Z A R1 denotes a distance between point A and a plane in which the second coil 22 is located, R1 denotes a radius of the second coil 22, and I1 denotes the product of the second current in the second coil 22 and the windings of the second coil 22.

[0020] Furthermore, referring to Fig. 4B The mask-holding coils 20 only include the first coil 21 and the second coil 22, and both the first coil 21 and the second coil 22 are circular. The radius of the first coil 21 and that of the second coil 22 are equal, with both being R1. Both the product of the current value of the first current in the first coil and the windings of the first coil, and the product of the current value of the second current in the second coil and the windings of the second coil, are I1. The axis of the first coil 21 coincides with the axis of the second coil 22. The axis of the second coil 22 (or of the first coil 21) intersects the plane in which the first coil 21 is located at a point C and intersects the plane in which the second coil 22 is located at a point D. The length of a segment CD is the distance between the first coil 21 and the second coil 22. The midpoint of the segment CD is "O".A rectangular coordinate system is established by taking “O” as the origin, any line containing the origin “O” parallel to the plane in which the second coil 22 (or the first coil 21) is located, as axis X, and a line in which the axis of the second coil 22 (or the first coil 21) is located, as axis Z. Then the magnetic induction intensity is B. Z2 of the magnetic field formed at a point B on the axis by the mask holding coils 20, BZ2=μ0I1R12 / 2((ZB−d1)2+R12)3 / 2+μ0I1R12 / 2((ZB+d1)2+R12)3 / 2, where d1 denotes half the distance between the first coil 21 and the second coil 22 and Z B denotes a distance between point B and point 0.

[0021] B Z2is an even function. To ensure that the magnetic field strength of the magnetic field generated by the mask-holding coils 20 is homogeneous around positions where the Z-coordinate is 0, let d2BZ2 / dZB2=0, when Z approaches zero, which d1=R12 This means that the magnetic field generated by the mask-holding coils 20 exhibits a region of homogeneous magnetic field strength when the radius R1 of the first coil 21, the radius R1 of the second coil 22, and the distance 2d1 between the first coil 21 and the second coil 22 are equal. In this case, the first coil 21 together with the second coil 22 forms a Helmholtz coil.

[0022] The magnetic field strength distribution of the magnetic field generated by the Helmholtz coil is studied below by simulation. Assuming that the radius R1 of the first coil 21, the radius R1 of the second coil 22, and the distance 2d1 between the first coil 21 and the second coil 22 are given by... Fig. 4B all are equal to 1.732 m, a first current of a specific current value is supplied in the first coil 21 and a second current of a specific current value is supplied in the second coil 22, the magnetic field strength distribution of the magnetic field generated between the first coil 21 and the second coil 22 is given by Fig. 5A, Fig. 5B and Fig. 5C is shown. The vertical axis in Fig. 5A and Fig. 5B denotes an axial direction of the Helmholtz coil (i.e., the axis direction of the first coil 21 or the second coil 22) and corresponds to the direction of the axis Z in Fig. 4B. The horizontal axis in Fig. 5A and Fig. 5C denotes a radial direction of the Helmholtz coil and corresponds to the direction of the X axis in Fig. 4B, and the radial direction is perpendicular to the axial direction. All numerical values ​​on the curves in Fig. 5A, the abscissa in Fig. 5B and the ordinate in Fig. 5C denotes the magnetic field strength of the magnetic field, and the unit is Tesla (T).

[0023] In Fig. 5A can be found to have a region between the first coil 21 and the second coil 22 with a homogeneous magnetic field strength. Fig. 5B is a schematic diagram showing the magnetic field strength distribution along a distance EF in Fig. 4B shows the line parallel to the Z axis and 0.4 m away from the Z axis (i.e., X = 0.4 m). It can be found in Fig. 5B found that the magnetic field strength of the magnetic field is almost constant between Z = -0.5 m and Z = 0.5 m. Fig. Figure 5C is a schematic diagram showing a radial distribution of the magnetic field strength when Z (Z > 0) assumes different values. Fig. 5C can be found that, even if for any value Z there is a slight change in the magnetic field strength in the radial direction (when Z = z1, the maximum change in the magnetic field strength in the radial direction is about 0.05 T, which is much smaller than the magnetic field strength of any position whose Z-coordinate is z1), the slight change in the magnetic field strength is within an allowable error range and is negligible.

[0024] The preceding simulation data show that a magnetic field with a homogeneous magnetic field strength can be generated over a comparatively large area by supplying the first current and the second current to the first coil 21 and the second coil 22, respectively. The area with homogeneous magnetic field strength can be used as the mask arrangement area 30.

[0025] In this specific application, the first and second currents can be selected in suitable current values ​​according to the weight and dimensions of the mask 31 and the number, shape, dimensions, etc., of the coils in the mask holding coils 20, so that the mask 31, which is arranged in the mask arrangement area 30, is subject to an attractive force equal to or slightly less than gravity, thus enabling the mask 31 to be in a state of force equilibrium. This solves the problem in existing vapor deposition devices where the mask 31 is fixed at its edge by the support frame 31, and there is a possibility of deformation due to a force imbalance, which impairs the vapor deposition effect. Therefore, the objective of preventing deformation of the mask 31 and improving the vapor deposition effect of the vapor deposition device is achieved.

[0026] In contrast to the aforementioned technical solution, when using an existing vapor deposition device, a glass substrate is typically fixed before vapor deposition. The mask is then attracted to a target position close to the glass substrate under the control of a magnetic arrangement to cause the mask and the glass substrate to touch, and then the vapor deposition is carried out. In practical operation, during the process of attracting the mask to the target position by the magnetic arrangement, the distance between the mask and the magnetic arrangement changes continuously, as the position of the mask changes continuously. Therefore, the attractive force exerted by the magnetic arrangement on the mask increases exponentially with the change in the distance between the mask and the magnetic arrangement.Typically, the attractive force exerted on the mask by the magnetic array is more than a hundred times the attractive force acting on the mask when it moves to a position 10 mm away from the magnetic array. Under such a strong attractive force, the mask accelerates very rapidly, causing it to strike the glass substrate at a very high speed and buckle. Furthermore, if a photospacer is present on the glass substrate, it will be scratched, impairing the display's functionality.

[0027] It is well known that the force F to which the ferromagnetic material is subjected in an inhomogeneous magnetic field B, the magnetic moment m of the ferromagnetic material and the magnetic field strength gradient obey the following equation: F=(m⋅∇)B=mx∂B∂x+my∂B∂y+mz∂B∂z

[0028] From the preceding equation, the force to which the ferromagnetic material is subjected in an inhomogeneous magnetic field is related not only to the magnetic induction intensity but also to the magnetic field strength gradient at the position of the ferromagnetic material. Optionally, the vapor deposition device can be configured to include mask transport coils so that the mask can move to the target position at a constant or approximately constant speed. A current of a specific value is supplied to the mask transport coils so that the magnetic field strength gradient of the magnetic field generated in the mask assembly area is homogeneous, thereby controlling the movement speed of the mask.It should also be mentioned that during a positioning process of the mask in embodiments of the present invention, the change in the force exerted on the mask in the vertical direction is small and the force exerted on the mask in the horizontal direction is almost zero, so that the mask does not hit the glass substrate at a high speed, thus avoiding damage to the mask and scratching of the photospacer.

[0029] Fig. Figure 6 is a schematic diagram showing the construction of the vapor deposition device according to a further embodiment of the present invention. The vapor deposition device, with reference to… Fig. 6 specifically, furthermore, at least one set of mask transport coils 40 on (in the vapor deposition device, exemplified in Fig. (As shown in Figure 6, only one set of mask transport coils is included.) The mask transport coils 40 have a third coil 41 and a fourth coil 42 arranged opposite each other. A third current is supplied in the third coil 41, and a fourth current is supplied in the fourth coil 42, such that the magnetic field strength gradient of the magnetic field generated in the mask arrangement area 30 is homogeneous.

[0030] Optionally, the direction of the third current is the same as the first winding direction, while the direction of the fourth current is opposite to the first winding direction. The product of the current value of the third current and the windings of the third coil 41 is equal to the product of the current value of the fourth current and the windings of the fourth coil 42. An axis of the third coil 41 and an axis of the fourth coil 42 coincide. An axis of the mask transport coils 40 and the axis of the mask holding coils 20 coincide.

[0031] Similarly, the third coil 41 and the fourth coil 42 in the mask transport coils 40 can be symmetrical or asymmetrical. If the third coil 41 and the fourth coil 42 are symmetrical, they can be circular, polygonal, elliptical, or racetrack-shaped, etc.

[0032] It should be noted that for different shapes of the third coil 41 and the fourth coil 42 in the mask transport coils 40, the conditions that must be met to generate a magnetic field with a homogeneous magnetic field strength gradient in the mask arrangement area 30 through the mask transport coils 40 differ. Taking a circular third coil 41 and fourth coil 42 as an example, the conditions that must be met to generate the magnetic field with the homogeneous magnetic field strength gradient through the mask transport coils 40 are derived below. For ease of calculation, only the magnetic field generated at the axis of the third coil 41 by the mask transport coils 40 is derived here as an example.

[0033] Fig. Figure 7 is a schematic diagram illustrating the process of deriving a condition that must be met to generate a magnetic field with a homogeneous magnetic field strength gradient through the mask transport coils. Referring to Fig. In section 7, it is assumed that the radius of the third coil 41 in the mask transport coils 40 and the radius of the fourth coil 42 in the mask transport coils 40 are equal and both equal to R2. Both the product of the current value of the third coil and the windings of the third coil 41 and the product of the current value of the fourth coil and the windings of the fourth coil 42 are I2. The axis of the third coil 41 and the axis of the fourth coil 42 coincide. The axis of the third coil 41 (or the fourth coil 42) intersects a plane in which the third coil 41 is located at a point G and intersects a plane in which the fourth coil 42 is located at a point H. The length of a segment GH is the distance between the third coil 41 and the fourth coil 42. The midpoint of the segment GH is O.A rectangular coordinate system is established by taking point O as the origin, any line from origin O parallel to the plane in which the third coil 41 (or the fourth coil 42) is located, as axis X, and the line in which the axis of the third coil 41 (or the fourth coil 42) is located as axis Z. Then the magnetic induction intensity is B. Z3 of the magnetic field, which is formed at point C on the axis of the mask transport coils 40, BZ3=μ0I2R22 / 2((ZC−d2)2+R22)3 / 2+μ0I2R22 / 2((ZC+d2)2+R22)3 / 2, where µ0 denotes the magnetic field constant, d2 denotes half the distance between the third coil 41 and the fourth coil 42, and Zc denotes a distance between point C and point O.

[0034] B Z3is an odd function. To ensure that the magnetic field strength is homogeneous around positions where the Z-coordinate is 0, let d3BZ3dZC3=0, when Z approaches 0, which 2d²=3R² This means that the magnetic field generated by the mask transport coils 40 exhibits a region of homogeneous magnetic field strength gradient when the distance 2d2 between the third coil 41 and the fourth coil 42 is equal to √3 times the radius R2 of the third coil 41 (or the fourth coil 42). In this case, the third coil 41 together with the fourth coil 42 forms an anti-Helmholtz coil.

[0035] The distribution of the magnetic field strength gradient of the magnetic field generated by the anti-Helmholtz coil is studied below by simulation. Referring to Fig. 7 Assuming that both the radius R2 of the third coil 41 and the radius R2 of the fourth coil 42 are equal to 1 m, the distance 2d2 between the third coil 41 and the fourth coil 42 is equal to 1.732 m, and a third current of a specific current value is supplied in the third coil 41 and a fourth current of a specific current value is supplied in the fourth coil 42, then the distribution of the magnetic field strength gradient of the magnetic field generated between the third coil 41 and the fourth coil 42 is Fig. 8A, Fig. 8B and Fig. 8C is shown. The vertical axes in Fig. 8A and Fig. 8B denotes an axis direction of the anti-Helmholtz coil (i.e., the axis direction of the third coil 41 or the fourth coil 42) and corresponds to the direction of the axis Z in Fig. 7. The horizontal direction in Fig. 8A and Fig. 8C denotes a radial direction of the anti-Helmholtz coil and corresponds to the direction of the X axis in Fig. 7, and the radial direction is perpendicular to the axial direction. The numerical values ​​on the curves in Fig. 8A, the abscissa in Fig. 8B and the ordinate in Fig. 8C denotes the magnetic field strength gradient of the magnetic field, the unit of which is millitesla per meter (mT / m).

[0036] In Fig. 8A can be found to have a region between the third coil 41 and the fourth coil 42 with a homogeneous magnetic field strength gradient. Fig. 8B is a schematic diagram showing the distribution of the magnetic field strength gradient along a distance KJ in Fig. 7 parallel to the Z axis and 0.4 m away from the Z axis (i.e., X = 0.4 m). In Fig. 8B can be found that the magnetic field strength gradient of the magnetic field changes gently between Z = -0.5 m and Z = 0.5 m. Fig. Figure 8C is a schematic diagram showing the radial distribution of the magnetic field strength gradient when Z = 0. Fig. 8C can be found that, although there is a slight change in the magnetic field strength gradient in the radial direction, the slight change in the magnetic field strength gradient is within an allowable error range and is negligible.

[0037] The simulation data above show that a magnetic field with a homogeneous magnetic field strength gradient can be generated over a comparatively large area by providing the third current and the fourth current in the third coil 41 and the fourth coil 42, respectively.

[0038] In Fig. 9 It is assumed that the radii R1 of the first coil 21 and the second coil 22 are equal to 1.732 m, the radii R2 of the third coil 41 and the fourth coil 42 are equal to 1 m, both the distance d2 between the third coil 41 and the fourth coil 42 and the distance d1 between the first coil 21 and the second coil 22 are equal to 1.732 m, the first coil 21 and the third coil 41 are in the same plane, and the second coil 22 and the fourth coil 42 are in the same plane. The distribution of accelerations of the mask 31 at different locations in the magnetic field is determined by the magnetic field. Fig. The steaming device provided in 9 is in Fig. 10A, Fig. 10B and Fig. 10C is shown. The vertical axis in Fig. 10A and Fig. 10B denotes the axial direction of the mask transport coils 40 (or the mask holding coils 20) and corresponds to the direction of the axis Z in Fig. 9. The horizontal axis in Fig. 10A and Fig. 10C denotes the radial direction of the mask transport coils 40 (or the mask holding coils 20) and corresponds to the direction of the X axis in Fig. 9, and the radial direction is perpendicular to the axial direction. The numerical values ​​on the curves in Fig. 10A, the abscissa in Fig. 10B and the ordinate in Fig. 10C denotes the acceleration of the mask 31 in the direction of the axis Z at the position of the mask 31, which is generated by the magnetic field and whose unit is meters per second squared (m / s²). 2 ) is.

[0039] In Fig. 10A can be found that the acceleration of the mask 31 within a specific range between the third coil 41 and the fourth coil 42 is extremely homogeneous. Fig. 10B is a schematic diagram showing the distribution of acceleration along a distance LM in Fig. 9 parallel to the Z axis and 0.4 m away from the Z axis (i.e., X = 0.4 m). In Fig. 10B can be found that the acceleration of the mask 31 has an approximately linear distribution and is close to the acceleration due to gravity in the axial direction (i.e., the direction of the axis Z). Fig. Figure 10C is a schematic diagram showing the radial distribution of acceleration when Z (Z > 0) takes on different values. Fig. In 10C, it can be found that the acceleration at positions near the axis (Z-axis) is nearly constant as the X-value continuously increases. Although the acceleration does change at positions comparatively far from the axis (X-axis), the change in acceleration is small. It should be noted that the change in acceleration is only 0.15 times the acceleration due to gravity when Z is in Fig. 10C increases by 3 cm (Z increases from Z4 to Z7). This is undoubtedly advantageous for controlling the movement speed of mask 31.

[0040] According to the technical solution of the present embodiment, the mask holding coils and mask transport coils are provided in the vapor deposition device, such that the mask holding coils can generate a magnetic field with a homogeneous magnetic field strength in the mask assembly area when the mask is stationary. Consequently, the attractive force exerted by the mask holding coils on the mask is equal to or slightly greater than the force of gravity exerted on the mask. Therefore, the mask is in a state of force equilibrium, and the undesirable phenomenon of mask deformation due to a force imbalance is avoided.When the mask is in motion, the current in the mask transport coils is controlled to regulate the acceleration of the mask's movement. This controls the mask's speed and prevents it from impacting the glass substrate at excessive speed, which would create a roughness on the mask and scratch columnar photospacers within the glass substrate, impairing the display effect. During a positioning process of the mask provided by embodiments of the present invention, the force exerted on the mask changes only slightly in the vertical direction and is nearly zero in the horizontal direction.Therefore, the mask will not hit the glass substrate at an extremely high speed, thus avoiding the problem of damaging the mask and scratching the photospacers.

[0041] In the specific design, the sizes of the mask holding coils and the mask transport coils, and the positional relationship between them, can be varied. For example, in Fig. 9. The distance d1 between the first coil 21 and the second coil 22 in the mask holding coils 20 is equal to the distance d2 between the third coil 41 and the fourth coil 42 in the mask transport coils, and the first coil 21 and the third coil 41 are located in the same plane, as are the second coil 22 and the fourth coil 42. This is merely a specific example of the present invention rather than a limitation of the present invention. Optionally, as in Fig. Figure 11 shows that the radius R1 of the first coil 21, the radius R1 of the second coil 22, the radius R2 of the third coil 41 and the radius R2 of the fourth coil 42 are all the same, and the first coil 21, the second coil 22, the third coil 41 and the fourth coil 42 are each located on different planes.

[0042] In a practical steaming process, as used in Fig. As shown in Figure 11, the mask 31 has various shapes, such as a circle, a square, a polygon, an ellipse, a racetrack, or the like. During vapor deposition, mask holding coils 20 and mask transport coils 40 of a suitable size and shape are selected according to the size and shape of the mask 31 to ensure that the entire mask 31 is located within an area of ​​homogeneous magnetic field strength and homogeneous magnetic field strength gradients. For example, if the mask 31 is rectangular, it is necessary to ensure that the radius R2 of the third coil 41 is greater than the length of a long side m of the mask 31.

[0043] In the specific configuration, the current in the mask holding coils 20 can be equal to the current in the mask transport coils 40, or alternatively, it can be different. The higher the current in the mask holding coils 20 (or the mask transport coils 40), the more heat is generated in them. Consequently, the mask holding coils 20 (or the mask transport coils 40) can easily burn out if they operate for a long time. Therefore, the mask holding coils 20 and the mask transport coils 40 are optionally equipped with a cooling device. For improved cooling, the ratio of the current value of the first current to the current value of the third current is optionally greater than or equal to 0.1 and less than or equal to 10. Typically, the current value of the first current is equal to that of the third current.

[0044] Fig. Figure 12 is a schematic diagram showing the construction of the vapor deposition device according to a further embodiment of the present invention. In comparison with Fig. 9 and Fig. 11. The first and second coils in the mask-holding coils are square. Referring to Fig. The first coil 21 and the second coil 22 are squared in the mask-holding coils 20. The side length of the first coil 21 is equal to the side length of the second coil 22, and the distance between the first coil 21 and the second coil 22 is 0.5445 times the side length of the first coil 21.

[0045] Referring to Fig. In section 12, a reason is given below for setting the distance between the first coil 21 and the second coil 22 equal to 0.5445 times the side length of the first coil 21. It is assumed that the side length of both the first coil 21 and the second coil 22 is A1, and the distance between the first coil 21 and the second coil 22 is d3; that both the product of the current value of the first coil and the windings of the first coil and the product of the second coil and the windings of the second coil are I3; and that the axis of the mask-holding coils 20 (i.e., the axis of the first coil 21 or the axis of the second coil 22) intersects the plane in which the first coil 21 is located at a point Q. The axis of the mask-holding coils 20 intersects the plane in which the second coil 22 is located at a point N, and the midpoint of a line between point Q and point N is point O.Based on the above, the magnetic induction intensity is B. Z4 of the magnetic field that is formed at any point P on the axis of the mask holding coils 20, BZ4=μ0I3a122π[a124+(Zp−d32)2]a122+(Zp−d32)2+μ0I3a122π[a124+(Zp−d32)2]a122+(Zp+d32)2, where µ0 denotes the magnetic constant and Z P denotes a distance between point P and point O.

[0046] B Z4 is an even function. To ensure that the magnetic field strength is homogeneous around positions whose Z-coordinates are 0, let d2BZ4dZP2=0, when Z approaches zero, resulting in d3 ≈ 0.5445a1. That is, the mask-holding coils 20 can generate a magnetic field with a homogeneous magnetic field strength when the distance d3 between the first coil 21 and the second coil 22 is 0.5445 times the side length a1 of the first coil 21.

[0047] Further referring to Fig. 12 The vapor deposition device can further comprise a set of mask transport coils 40. A third coil 41 and a fourth coil 42 in the mask transport coils 40 are square, and the side length of the third coil 41 and the side length of the fourth coil 42 are equal. The distance between the third coil 41 and the fourth coil 42 is 0.94585 times the side length of the third coil 41. The third coil 41 and the first coil 21 are in the same plane, and the fourth coil 42 and the second coil 22 are in the same plane. That is, the distance between the first coil 21 and the second coil 22 is equal to the distance between the third coil 41 and the fourth coil 42.

[0048] The following is a reason why the distance between the third coil 41 and the fourth coil 42 is set to be equal to 0.94585 times the side length of the third coil 41. It is assumed that both the side length of the third coil 41 and the side length of the fourth coil 42 are a² and the distance between the third coil 41 and the fourth coil 42 is d³; that both the product of the current value of the third coil 41 and the product of the current value of the fourth coil 42 and the windings of the fourth coil 42 are I⁴; that the axis of the mask transport coils 40 (i.e., the axis of the third coil 41 or the fourth coil 42) intersects the plane in which the third coil 41 is located at a point Q; and that the axis of the mask transport coils 40 intersects the plane in which the fourth coil 42 is located at a point N. and the midpoint of a line between point Q and point N is point O.In this case, the magnetic field strength is B. Z5 of the magnetic field, which is formed at any point P on the axis of the mask transport coils 40, BZ5=μ0I4a222π[a224+(Zp−d32)2]a222+(Zp−d32)2+μ0I4a222π[a224+(Zp+d32)2]a222+(Zp+d32)2, where µ0 denotes the magnetic constant and Z P denotes a distance between point P and point O.

[0049] B Z5 is an odd function. To ensure that the magnetic field strength gradient of the magnetic field is homogeneous around positions whose Z-coordinates are 0, let d3BZ5dZP3=0, when Z approaches 0, resulting in d3 ≈ 0.94585a2. That is, the magnetic field generated by the mask transport coils 40 has a homogeneous magnetic field strength gradient when the distance d3 between the third coil 41 and the fourth coil 42 is 0.94585 times the side length a2 of the third coil 41.

[0050] Similarly, as in Fig. As shown in Figure 12, the distance between the first coil 21 and the second coil 22 in the mask holding coils 20 is set such that it is equal to the distance between the third coil 41 and the fourth coil 42 in the mask transport coils 40. The first coil 21 and the third coil 41 are arranged in the same plane, and the second coil 22 and the fourth coil 42 are also arranged in the same plane. The foregoing arrangement is merely a specific embodiment of the present invention rather than a limitation of the invention. In this specific embodiment, the sizes of the mask holding coils 20 and the mask transport coils 40 and their positional relationship can be varied. Optionally, as shown in Figure 12, the following configurations are possible: Fig. 13 the side length a1 of the first coil 21, the side length a1 of the second coil 22, the side length a2 of the third coil 41 and the side length a2 of the fourth coil 42 are equal and the first coil 21, the second coil 22, the third coil 41 and the fourth coil 42 are in different planes.

[0051] In practical vapor deposition, the mask 31 can have various shapes, such as a circle, a square, a polygon, or the like. During vapor deposition, mask holding coils 20 and mask transport coils 40 of a suitable size and shape are selected according to the size and shape of the mask 31 to ensure that the entire mask 31 is located within an area of ​​homogeneous magnetic field strength and homogeneous magnetic field strength gradients. For example, if the mask 31 is rectangular, it is necessary to ensure that the side length a2 of the third coil 41 is greater than the length of a long side m of the mask 31 when the vapor deposition device is in operation. Fig. 13 is used.

[0052] Furthermore, to prevent the mask holding coils 20 (or the mask transport coils 40) from burning out easily due to prolonged operation, the mask holding coils 20 and the mask transport coils 40 are optionally equipped with a cooling device. For improved cooling, the ratio of the current value of the first current to the current value of the third current can be greater than or equal to 0.1 and less than or equal to 10. Typically, the current value of the first current is equal to that of the third current.

[0053] Each of the mask-holding coils in the vapor deposition devices provided by the foregoing technical solutions has two coils. In practical implementation, the mask-holding coils may have three, four, five, or more coils. Some typical mask-holding coils are described below.

[0054] Fig. Figure 14 is a schematic diagram showing the internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment. In comparison with the aforementioned technical solutions, the mask holding coils 20 in the Fig. The vapor deposition device shown in 14 has a total of three coils. More precisely, the mask-holding coils 20, as shown in the illustration in Fig. Figure 14 shows a first coil 21, a second coil 22, and a fifth coil 23. The fifth coil 23 is arranged between the first coil 21 and the second coil 22 and is coaxial with both. A fifth current is supplied in the fifth coil 23 to work in conjunction with the first and second coils, generating a magnetic field with homogeneous magnetic field strength in the mask arrangement area 30.

[0055] As in Fig. As shown in Figure 14, the first coil 21, the second coil 22, and the fifth coil 23 are circular, which is merely a specific embodiment rather than a limitation of the present invention. In the specific configuration, the coils in the mask-holding coils can be circular, polygonal, elliptical, racetrack-shaped, and the like. Referring to Fig. In the mask-holding coils 20, the first coil 21, the second coil 22, and the fifth coil 23 are square. Furthermore, the side lengths of the first coil 21, the second coil 22, and the fifth coil 23 can be set to be equal, and both the distance between the first coil 21 and the fifth coil 23 and the distance between the second coil 22 and the fifth coil 23 are set to be 0.4106 times the side length of the first coil 21 (or the second coil 22 or the fifth coil 23).

[0056] Fig. Figure 16 is a schematic diagram showing the internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment. In comparison with the preceding technical solutions, the mask holding coils 20 in the Fig. The vapor deposition device shown in 16 has a total of four coils. More precisely, the mask-holding coils 20, with reference to Fig. Figure 16 shows a first coil 21, a second coil 22, a fifth coil 23, and a sixth coil 24. The fifth coil 23 and the sixth coil 24 are arranged between the first coil 21 and the second coil 22 and are coaxial with the first coil 21 and the second coil 22. The first coil 21, the fifth coil 23, the sixth coil 24, and the second coil 22 are arranged sequentially along the axis. A fifth current is supplied in the fifth coil 23, and a sixth current is supplied in the sixth coil 24 to work together with the first and second coils, so that a magnetic field with a homogeneous magnetic field strength is generated in the mask arrangement region 30.

[0057] Similarly, in specific configurations, the coils in the mask-holding coils can be circular, polygonal, elliptical, racetrack-shaped, or the like. If referring to Fig. 16. Each of the first coil 21, the second coil 22, the fifth coil 23, and the sixth coil 24 is circular; the radii of the first coil 21, the second coil 22, the fifth coil 23, and the sixth coil 24 may optionally be set to be equal; the distance between the first coil 21 and the fifth coil 23 and the distance between the sixth coil 24 and the second coil 22 may be set to be 0.6966 times the radius of the first coil 21; and the distance between the fifth coil 23 and the sixth coil 24 may be set to be 0.4864 times the radius of the first coil 21.In one implementation of the foregoing embodiments of the present invention, the windings of the first coil 21, the second coil 22, the fifth coil 23 and the sixth coil 24 are identical and the currents provided in the coils satisfy the following relation: A ratio of the current value of the first current / the fifth current / the sixth current / the second current is 9:4:4:9.

[0058] If referring to Fig. 17 each of the first coil 21, the second coil 22, the fifth coil 23 and the sixth coil 24 is square, the side lengths of the first coil 21, the second coil 22, the fifth coil 23 and the sixth coil 24 can be fixed such that they are equal, both the distance between the first coil 21 and the fifth coil 23 and the distance between the sixth coil 24 and the second coil 22 can be fixed such that they are 0.3774 times the side length of the first coil 21, and the distance between the fifth coil 23 and the sixth coil 24 can be fixed such that it is 0.2562 times the side length of the first coil 21.

[0059] Fig. Figure 18 is a schematic diagram showing the internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment. In comparison with the preceding technical solutions, the mask holding coils 20 in the Fig. The vapor deposition device shown in 18 has a total of five coils. More precisely, the mask-holding coils 20, with reference to Fig. Figure 18 shows a first coil 21, a second coil 22, a fifth coil 23, a sixth coil 24, and a seventh coil 25. The fifth coil 23, the sixth coil 24, and the seventh coil 25 are arranged between the first coil 21 and the second coil 22 and are coaxial with the first coil 21 and the second coil 22. The first coil 21, the fifth coil 23, the sixth coil 24, the seventh coil 25, and the second coil 22 are arranged sequentially along the axis. A fifth current is provided in the fifth coil 23, a sixth current is provided in the sixth coil 24, and a seventh current is provided in the seventh coil 25 to work together with the first and second coils to generate a magnetic field with a homogeneous magnetic field strength in the mask arrangement region 30.

[0060] Similarly, in a specific configuration, the coils in the mask-holding coils can be circular, polygonal, elliptical, racetrack-shaped, or the like. For example, with reference to Fig. 18 if each of the first coil 21, the second coil 22, the fifth coil 23, the sixth coil 24 and the seventh coil 25 is square, the side lengths of the first coil 21, the second coil 22, the fifth coil 23, the sixth coil 24 and the seventh coil 25 can be set so that they are equal, and the distance between the first coil 21 and the fifth coil 23, the distance between the fifth coil 23 and the sixth coil 24, the distance between the sixth coil 24 and the seventh coil 25 and the distance between the seventh coil 25 and the second coil 22 can be set so that they are 0.25 times the side length of the first coil 21.

[0061] It should be noted that the more coils are contained in the mask-holding coils, the more homogeneous the magnetic field strength is in the mask assembly area. It should be understood by those skilled in the art that the number of coils contained in the mask-holding coils of embodiments of the present invention is not limited to three, four, or five. The size of each coil, the current applied to each coil, and the spacing between coils can be determined according to the number of coils in order to form a set of Helmholtz coils and provide a homogeneous magnetic field strength for the mask assembly area.

[0062] In the above technical solutions, the vapor deposition device has only one set of mask transport coils. In a practical configuration, the vapor deposition device may also have two or more sets of mask transport coils. Fig. Figure 19 is a schematic diagram showing the internal structure of the vapor deposition device, wherein the internal structure is a component of the vapor deposition device according to the invention, according to a further embodiment which has two sets of mask transport coils. Referring to Fig.19 The vapor deposition device comprises a first set of mask transport coils 401 and a second set of mask transport coils 402. An axis of the first set of mask transport coils 401 and an axis of the second set of mask transport coils 402 coincide. In the first set of mask transport coils 401, a third coil 41 and a fourth coil 42 are circular, and both the radius of the third coil 41 and the radius of the fourth coil 42 are equal to 0.74 times the distance between the third coil 41 and the fourth coil 42. In the second set of mask transport coils 402, a third coil 41 and a fourth coil 42 are circular, and both the radius of the third coil 41 and the radius of the fourth coil 42 are equal to 0.27 times the distance between the third coil 41 and the fourth coil 42.The third coil 41 of the first set of mask transport coils 401 and the third coil 41 of the second set of mask transport coils 402 are in the same plane, and the fourth coil 42 of the first set of mask transport coils 401 and the fourth coil 42 of the second set of mask transport coils 402 are in the same plane.

[0063] The more sets of mask transport coils are included in the vapor deposition device, the more homogeneous the magnetic field strength gradient is in the mask assembly area. It should be understood by those skilled in the art that the number of mask transport coil sets in embodiments of the present invention is not limited to one or two sets. The mask transport coils can be composed of a plurality of anti-Helmholtz coils arranged coaxially at equal intervals, with progressively decreasing radii and nested within one another to ensure a homogeneous magnetic field strength gradient for the mask assembly area.

[0064] It should be understood that embodiments of the present invention provide a variety of mask holding coils and a variety of mask transport coils. In practical application, any mask holding coil and any mask transport coil can be selected and combined to form a vapor deposition device with the mask holding coils and the mask transport coils.

[0065] Based on the foregoing technical solutions, the vapor deposition device can optionally further include a cooling device for cooling the mask holding coils and the mask transport coils, or alternatively, for cooling only one of the mask holding coils and the mask transport coils. The present invention is not limited to this and depends on the specific situation.

[0066] In summary, according to embodiments of the present invention, a magnetic field with a homogeneous magnetic field strength is generated in the mask assembly area by using mask holding coils, such that the central region of the mask arranged in the mask assembly area is in a state of force equilibrium. Embodiments of the present invention solve a problem in existing vapor deposition devices, namely that the support frame fixes the mask at its edge, and deformation of the mask is likely due to the central region being subjected to unbalanced forces, thereby impairing the vapor deposition effect. The invention achieves the goal of avoiding the undesirable phenomenon of the central region of the mask being deformed due to unbalanced forces and improving the vapor deposition effect of the vapor deposition device.During a process of positioning the mask, which is provided by embodiments of the present invention, the force exerted on the mask changes slightly in the vertical direction and is almost zero in the horizontal direction, so that the mask does not hit the substrate at a very high speed, thereby avoiding damage to the mask and scratching of photospacers.

Claims

[1] A vapor deposition device comprising: a vapor deposition chamber, Mask holding coils (20), and at least one set of mask transport reels (40), wherein the mask holding coils (20) have a first coil (21) and a second coil (22) arranged opposite each other, a mask arrangement area (30) is arranged between the first coil (21) and the second coil (22), and a first current is provided in the first coil (21) and a second current is provided in the second coil (22), such that a magnetic field generated in the mask arrangement area (30) has a homogeneous magnetic field strength, wherein each set of mask transport coils (40) has a third coil (41) and a fourth coil (42) arranged opposite each other, and the mask arrangement area (30) is arranged between the third coil (41) and the fourth coil (42), characterized by , that an axis of the first coil (21), an axis of the second coil (22), an axis of the third coil (41) and an axis of the fourth coil (42) coincide. [2] The vapor deposition device according to claim 1, further comprising a mask (31) made of ferromagnetic material. [3] The vapor deposition device according to claim 1 or 2, wherein the vapor deposition device is configured such that the directions of currents in all coils contained in the mask holding coils (20) are the same as a first winding direction; a product of a current value of a current in each coil contained in the mask holding coils and windings of each coil has the same value. [4] The vapor deposition device according to claim 3, wherein the vapor deposition device is configured such that a third current is provided in the third coil (41) and a fourth current is provided in the fourth coil (42), so that the magnetic field generated in the mask arrangement area (30) has a homogeneous magnetic field strength gradient. [5] The vapor deposition device according to claim 4, wherein the vapor deposition device is configured such that one direction of the third current is the same as the first winding direction and one direction of the fourth current is opposite to the first winding direction; a product of a current value of the third current and windings of the third coil (41) is equal to a product of a current value of the fourth current and windings of the fourth coil (42). [6] The vapor deposition device according to claim 5, wherein each of the first coil (21), the second coil (22), the third coil (41) and the fourth coil (42) is of symmetrical shape. [7] The vapor deposition device according to claim 6, wherein each of the first coil (21), the second coil (22), the third coil (41) and the fourth coil (42) is one of circular, polygonal, elliptical and racetrack-shaped. [8] The vaporization device according to claim 7, wherein the mask holding coils (20) consist of the first coil (21) and the second coil (22); the first coil (21) and the second coil (22) are circular; and a distance (2d1) between the first coil (21) and the second coil (22), a radius (R1) of the first coil (21) and a radius (R1) of the second coil (22) are equal to each other. [9] The vapor deposition device according to claim 8, wherein only one set of mask transport coils (40) is included in the vapor deposition device; the third coil (41) and the fourth coil (42) are circular; a radius (R2) of the third coil (41) is equal to a radius (R2) of the fourth coil (42); and a distance (2d2) between the third coil and the fourth coil is √3 times the radius of the third coil. [10] The vapor deposition device according to claim 9, wherein the distance (2d1) between the first coil (21) and the second coil (22) in the mask holding coils (20) is equal to the distance (2d2) between the third coil (41) and the fourth coil (42) in the mask transport coils (40); or the radius of the first coil (21), the radius of the second coil (22), the radius of the third coil (41) and the radius of the fourth coil (42) are the same. [11] The vapor deposition device according to claim 9 or 10, wherein the mask (31) is rectangular and the radius (R2) of the third coil (41) is greater than the length of a long side (m) of the mask (31). [12] The vaporizing device according to any one of claims 9 to 11, wherein the vaporizing device is configured such that the ratio of the current value of the first current to the current value of the third current is greater than or equal to 0.1 and less than or equal to 10. [13] The vaporizing device according to claim 12, wherein the vaporizing device is configured such that the current value of the first current is equal to the current value of the third current. [14] The vapor deposition device according to claim 7, wherein the first coil (21) and the second coil (22) are square; and a side length (a1) of the first coil (21) is equal to a side length of the second coil (22) and the distance (d3) between the first coil (21) and the second coil (22) is 0.5445 times the side length (a1) of the first coil (21). [15] The vapor deposition device according to claim 14, wherein only one set of mask transport coils (40) is included in the vapor deposition device; the third coil (41) and the fourth coil (42) are square and one side length of the third coil (41) is equal to one side length of the fourth coil (42); and the distance between the third coil (41) and the fourth coil (42) is 0.94585 times the side length of the third coil. [16] The vapor deposition device according to claim 15, wherein the distance between the first coil (21) and the second coil (22) in the mask holding coils (20) is equal to the distance between the third coil (41) and the fourth coil (42) in the mask transport coils (40); or the side length of the first coil (21), the side length of the second coil (22), the side length of the third coil (41) and the side length of the fourth coil (42) are equal to each other. [17] The vapor deposition device according to claim 15 or 16, wherein the mask (31) is rectangular and a side length (a2) of the third coil (41) is greater than a length of a long side (m) of the mask (31). [18] The vaporizing device according to any one of claims 15 to 17, wherein the vaporizing device is configured such that the ratio of the current value of the first current to the current value of the third current is greater than or equal to 0.1 and less than or equal to 10. [19] The vaporizing device according to claim 18, wherein the vaporizing device is configured such that the current value of the first current is equal to the current value of the third current. [20] The vapor deposition device according to claim 3, wherein the mask holding coils (20) further comprise a fifth coil (23), wherein the fifth coil (23) is arranged between the first coil (21) and the second coil (22) and is arranged coaxially with the first coil (21) and the second coil (22); and a fifth current is provided in the fifth coil (23) to cooperate with the first coil (21) and the second coil (22) so that the magnetic field of a homogeneous magnetic field strength is generated in the mask arrangement area (30). [21] The vapor deposition device according to claim 20, wherein the first coil (21), the second coil (22) and the fifth coil (23) are square and one side length of the first coil (21), one side length of the second coil (22) and one side length of the fifth coil (23) are equal to each other; and both a distance between the first coil (21) and the fifth coil (23) and a distance between the second coil (22) and the fifth coil (23) is equal to 0.4106 times the side length of the first coil (21). [22] The vapor deposition device according to claim 3, wherein the mask holding coils (20) further comprise a fifth coil (23) and a sixth coil (24), wherein the fifth coil (23) and the sixth coil (24) are arranged between the first coil (21) and the second coil (22) and are arranged coaxially with the first coil (21) and the second coil (22); the first coil (21), the fifth coil (23), the sixth coil (24) and the second coil (22) are arranged successively along an axis; and to cooperate with the first coil (21) and the second coil (22), a fifth current is provided in the fifth coil (23) and a sixth current is provided in the sixth coil (24), so that the magnetic field with a homogeneous magnetic field strength is generated in the mask arrangement area (30). [23] The vapor deposition device according to claim 22, wherein the first coil (21), the second coil (22), the fifth coil (23) and the sixth coil (24) are circular and have the same radius, and the windings of the first coil (21), the windings of the second coil (22), the windings of the fifth coil (23) and the windings of the sixth coil (24) are identical to each other; both the distance between the first coil (21) and the fifth coil (23) and the distance between the sixth coil (24) and the second coil (22) are equal to 0.6966 times the radius of the first coil (21), and the distance between the fifth coil (23) and the sixth coil (24) is equal to 0.4864 times the radius of the first coil (21); and The ratio of the first stream, the fifth stream, the sixth stream, and the second stream is 9:4:4:

9. [24] The vapor deposition device according to claim 22, wherein each of the first coil (21), the second coil (22), the fifth coil (23) and the sixth coil (24) is square and the side length of the first coil (21), the side length of the second coil (22), the side length of the fifth coil (23) and the side length of the sixth coil (24) are equal to each other; and both a distance between the first coil (21) and the fifth coil (23) and a distance between the sixth coil (24) and the second coil (22) are equal to 0.3774 times the side length of the first coil (21) and a distance between the fifth coil (23) and the sixth coil (24) is equal to 0.2562 times the side length of the first coil (21). [25] The vapor deposition device according to claim 3, wherein the mask holding coils (20) further comprise a fifth coil (23), a sixth coil (24) and a seventh coil (25), wherein the fifth coil (23), the sixth coil (24) and the seventh coil (25) are arranged between the first coil (21) and the second coil (22) and are arranged coaxially with the first coil (21) and the second coil (22); the first coil (21), the fifth coil (23), the sixth coil (24), the seventh coil (25) and the second coil (22) are arranged successively along an axis; and to cooperate with the first coil (21) and the second coil (22), a fifth current is provided in the fifth coil (23), a sixth current is provided in the sixth coil (24), and a seventh current is provided in the seventh coil (25), so that the magnetic field generated in the mask arrangement area (30) has a homogeneous magnetic field strength. [26] The vapor deposition device of claim 25, wherein each of the first coil (21), the fifth coil (23), the sixth coil (24), the seventh coil (25) and the second coil (22) is square and one side length of the first coil (21), one side length of the second coil (22), one side length of the fifth coil (23), one side length of the sixth coil (24) and one side length of the seventh coil (25) are equal to each other; and Each of the distances between the first coil (21) and the fifth coil (23), between the fifth coil (23) and the sixth coil (24), between the sixth coil (24) and the seventh coil (25), and between the seventh coil (25) and the second coil (22) is equal to 0.25 times the side length of the first coil (21). [27] The vapor deposition device according to claim 6, wherein comprising at least one set of mask transport coils (40), a first set of mask transport coils (401), and a second set of mask transport coils (402); an axis of the first set of mask transport coils (401) and an axis of the second set of mask transport coils (402) coincide; in the first set of mask transport coils (401) the third coil (41) and the fourth coil (42) are circular and both a radius of the third coil (41) and a radius of the fourth coil (42) is equal to 0.74 times a distance between the third coil (41) and the fourth coil (42); in the second set of mask transport coils (402), the third coil (41) and the fourth coil (42) are circular, and both a radius of the third coil (41) and a radius of the fourth coil (42) are equal to 0.27 times a distance between the third coil (41) and the fourth coil (42); and the third coil (41) in the first set of mask transport coils (401) and the third coil (41) in the second set of mask transport coils (402) are arranged in the same plane, and the fourth coil (42) in the first set of mask transport coils (401) and the fourth coil (42) in the second set of mask transport coils (402) are arranged in the same plane. [28] The vaporization device according to any one of claims 4 to 27, further comprising a cooling device configured to cool the mask holding coils (20) and the mask transport coils (40).

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