OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH FIRST AND SECOND OPTOELECTRONIC ELEMENTS, MOBILE END DEVICE AND OPTICAL DEVICE

Abstract

Optoelectronic semiconductor device (10) comprising an optical element and a first arrangement (140) of first optoelectronic components (15) and a second arrangement (150) of second optoelectronic components (16) arranged in a substrate (100), wherein the optical element (200) is arranged above the first and above the second arrangement (140, 150) of first and second optoelectronic components (15, 16), wherein the first optoelectronic devices (15) each comprise a first resonator mirror (120) with a first main surface (121), an active region (125) suitable for generating radiation, and a second resonator mirror (110), each arranged one above the other along a first direction, wherein radiation (20) emitted by the optoelectronic device (15) is emitted via the first main surface (121), and are suitable for emitting electromagnetic radiation (20), the optical element (200) is an array of microlenses (205), and the optical element (200) includes additional deflecting elements (207) suitable for directing incident radiation onto a predetermined region of the second arrangement (150), and the second optoelectronic components (16) each comprise an active area (125) suitable for generating radiation and are suitable for receiving electromagnetic radiation (25).

Description

BACKGROUND

[0001] Mobile consumer electronics devices often contain laser light sources. For example, these are designed as surface-emitting lasers, i.e., lasers in which the generated laser light is emitted via the surface of a semiconductor layer arrangement.

[0002] Further optoelectronic semiconductor devices are known from the documents DE 601 23 122 T2, DE 195 08 256 A1, US 2016 / 0 352 071 A1 and US 2011 / 0 057 128 A1.

[0003] The present invention is based on the object of providing an improved optoelectronic semiconductor device.

[0004] According to embodiments, the object is achieved by the subject matter of the independent patent claims. Advantageous further developments are defined in the dependent claims. SUMMARY

[0005] An optoelectronic semiconductor device comprises a first arrangement of first optoelectronic components and a second arrangement of second optoelectronic components arranged in a substrate. The first optoelectronic components each comprise a first resonator mirror with a first main surface, an active region suitable for generating radiation, and a second resonator mirror, each of which is arranged one above the other along a first direction, wherein radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components each comprise an active region suitable for generating radiation and are suitable for receiving electromagnetic radiation.

[0006] For example, the first optoelectronic components form surface-emitting laser diodes. The active region of each of the first optoelectronic components can be identical to the active region of each of the second optoelectronic components.

[0007] For example, the first arrangement occupies a larger area than the second arrangement. The second arrangement can be arranged in a central region within the first arrangement. Alternatively, the second arrangement can also be arranged in an edge region of the first arrangement.

[0008] The optoelectronic semiconductor device may further comprise an optical element arranged above the first and second arrays of first and second optoelectronic components. For example, the optical element may be an array of microlenses. According to embodiments, the optical element may include additional deflection elements suitable for directing incident radiation onto a predetermined region of the second array.

[0009] The optical element can be directly adjacent to the surface of the optoelectronic components.

[0010] For example, the second optoelectronic components may be suitable for detecting electromagnetic radiation emitted by the first optoelectronic components.

[0011] For example, the first optoelectronic components can each be electrically connected to one another via at least a portion of the common substrate. According to embodiments, the second optoelectronic components can each be electrically connected to one another via at least a portion of the common substrate.

[0012] The optoelectronic semiconductor device may further comprise an isolation element isolating the first arrangement from the second arrangement.

[0013] The first and the second optoelectronic component can each contain a first connection region and a second connection region, via which the active region can be electrically contacted.

[0014] The first and the second optoelectronic component can each contain a first connection region and also a second connection region, via which the active region can be electrically contacted.

[0015] For example, the first connection region of each of the first and second optoelectronic components, as well as a common connection region, can be arranged in the region of a light-emitting surface of the optoelectronic semiconductor device. The common connection region can be connected to the common conductive substrate, for example, via a via contact.

[0016] According to embodiments, an optoelectronic semiconductor device comprises an arrangement of optoelectronic components, each having an identical layer structure. At least one part of the optoelectronic components is suitable for acting as a surface-emitting diode laser, and at least another part of the optoelectronic components is suitable for acting as a device for receiving electromagnetic radiation.

[0017] According to further embodiments, a mobile terminal or an optical device comprises the optoelectronic semiconductor device as described above.

[0018] The mobile device can be a smartphone, a laptop, a tablet or a phablet.

[0019] The optical device can be selected from a distance measuring device, a 2D and / or 3D sensor or 2D and / or 3D scanner, an illumination device, a proximity sensor, a spectrometer or a reflective light barrier. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings provide an understanding of embodiments of the invention. The drawings illustrate embodiments and, together with the description, serve to explain the same. Further embodiments and many of the intended advantages will become apparent from the following detailed description. The elements and structures shown in the drawings are not necessarily drawn to scale. Like reference numerals refer to like or corresponding elements and structures. Fig. 1 shows a schematic diagram of an optoelectronic semiconductor device according to embodiments. Fig. 2A shows a schematic cross-sectional view of a part of a first optoelectronic component according to embodiments. Fig. 2B shows a schematic cross-sectional view of a part of a second optoelectronic component according to further embodiments. Fig. 2C shows a transition region between the first and second optical elements according to embodiments. Fig. 2D shows a schematic cross-sectional view of an optoelectronic semiconductor device according to embodiments. Fig. 2E shows a schematic cross-sectional view of an optoelectronic semiconductor device according to further embodiments. Fig. 3A shows a schematic top view of an optoelectronic semiconductor device according to embodiments. Fig. 3B shows a schematic top view of an optoelectronic semiconductor device according to further embodiments. Fig. 3C shows a schematic top view of an optoelectronic semiconductor device according to further embodiments. Fig. 4A shows a circuit diagram of the optoelectronic device according to embodiments. Fig. 4B shows a schematic top view of a second main surface of an optoelectronic semiconductor device according to embodiments. Fig. 4C shows a circuit diagram of the optoelectronic device according to further embodiments. Fig. 5A shows a cross-sectional view of an optoelectronic semiconductor device according to further embodiments. Fig. 5B shows a cross-sectional view of an optoelectronic semiconductor device according to further embodiments. Fig. Figure 6A shows a schematic view of a mobile device. Fig. Figure 6B shows a schematic view of an optical device. DETAILED DESCRIPTION

[0021] In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top," "bottom," "front," "back," "over," "on," "in front of," "behind," "fore," "rear," etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for the purpose of explanation only and is not limiting in any way.

[0022] The description of the embodiments is not limiting, as other embodiments exist and structural or logical changes may be made without departing from the scope defined by the claims. In particular, elements of the embodiments described below may be combined with elements of other described embodiments, unless the context indicates otherwise.

[0023] The terms "wafer" or "semiconductor substrate" used in the following description can encompass any semiconductor-based structure having a semiconductor surface. Wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base support, and other semiconductor structures. For example, a layer of a first semiconductor material can be grown on a growth substrate of a second semiconductor material or of an insulating material, for example, on a sapphire substrate. Depending on the intended use, the semiconductor can be based on a direct or indirect semiconductor material.Examples of semiconductor materials particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, which can be used to generate ultraviolet, blue, or longer-wavelength light, for example, such as GaN, InGaN, AlN, AlGaN, AlGaInN; phosphide semiconductor compounds, which can be used to generate green or longer-wavelength light, for example, such as GaAsP, AlGaInP, GaP, AlGaP; and other semiconductor materials such as AlGaAs, SiC, ZnSe, GaAs, ZnO, Ga2O3, diamond, hexagonal BN, and combinations of the aforementioned materials. The stoichiometric ratio of the ternary compounds can vary. Further examples of semiconductor materials can include silicon, silicon-germanium, and germanium. In the context of the present description, the term "semiconductor" also includes organic semiconductor materials.

[0024] The terms "lateral" and "horizontal," as used in this description, are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be, for example, the surface of a wafer or a chip (die).

[0025] The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when growing layers.

[0026] The term "vertical," as used in this description, is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction may, for example, correspond to a growth direction during layer growth.

[0027] Where the terms "have," "contain," "comprise," "have," and the like are used here, these are open terms that indicate the presence of the elements or characteristics in question, but do not exclude the presence of further elements or characteristics. The indefinite and definite articles include both the plural and the singular, unless the context clearly indicates otherwise.

[0028] In the context of this description, the term "electrically connected" means a low-resistance electrical connection between the connected elements. The electrically connected elements do not necessarily have to be directly connected to each other. Additional elements can be arranged between the electrically connected elements.

[0029] Fig. 1 shows an example of an optoelectronic semiconductor device 10 with a first arrangement 140 of first optoelectronic components 15 and a second arrangement 150 of second optoelectronic components 16. The first optoelectronic components 15 and the second optoelectronic components 16 are arranged in a common substrate 100. The common substrate 100 can, for example, be a single-crystal semiconductor substrate on which semiconductor layers can be grown epitaxially. The precise structure of the respective optoelectronic components and the substrate 100 is described below with reference to Fig. 2A. The first optoelectronic components 15 can be designed, for example, as surface-emitting laser diodes (V CSEL, “vertical-cavity surface-emitting laser”). The second optoelectronic components 16 can, for example, have a similar or identical layer structure to the first optoelectronic components 15. They can be interconnected such that they act as detectors. For example, the second optoelectronic components 16 can receive the electromagnetic radiation 20 emitted by the first optoelectronic components 15, which has been reflected, for example, by a reflective component. The substrate 100 can represent a common electrode of the first and second optoelectronic components 15, 16 or can be connected to this common electrode. For example, a substrate region within the first arrangement 140 can be insulated from a substrate region within the second arrangement 150 by insulation elements 107.For example, such insulation elements 107 can be trenches filled with insulating, conductive, or suitably doped semiconductor material. Depending on the interconnection of the optoelectronic components, the trenches can extend to different depths. For example, they can extend so deep that adjacent substrate regions can be insulated from one another. According to further embodiments, they can each extend into the substrate as deep as the individual optoelectronic components, as shown, for example, in FIG. Fig. 5A. For example, both the first optoelectronic components 15 and the second optoelectronic components 16 may each be suitable for emitting or detecting electromagnetic radiation.

[0030] The substrate 100 can be applied to a suitable carrier 105. The carrier 105 can, for example, be part of a housing of a mobile terminal 30, an optical device 35, or a leadframe. The optoelectronic device 10 can further comprise an optical element 200. For example, the optical element 200 can be an array of microlenses 205. For example, the optical element 200 can be arranged above the first and above the second array 140, 150 of optoelectronic components. For example, the optical element 200 can completely cover both the first and the second array 140, 150 laterally along their extension direction or overlap with them. For example, as in Fig. 1, radiation 20 emitted by the first optoelectronic components 15 is reflected at the microlenses 205. The reflected radiation 25 is absorbed by the second optoelectronic components 16. An air gap can be arranged between the surface of the optoelectronic components 15, 16 and the optical element 200. According to further embodiments, an optically transparent material such as silicone or glass can be arranged between the surface of the optoelectronic components 15, 16 and the optical element 200. For example, the optical element 200 can be provided to reflect a portion of the radiation 20 emitted by the first optoelectronic components 15. For example, the radiation is reflected in the direction of the second optoelectronic components 16.These can receive the reflected radiation 25 and, based on a detected photocurrent, determine whether, for example, the optical component 200 is properly attached to the mobile terminal device.

[0031] Fig. 2A shows a cross-sectional view of a portion of a first optoelectronic component 15 according to embodiments. A first resonator mirror 120, an active region 125 suitable for generating radiation, and a second resonator mirror 110 are arranged above a first main surface 101 of a substrate. The first and second resonator mirrors 120, 110 can each have alternately stacked first layers of a first composition and second layers of a second composition. For example, the layers can alternately have a high refractive index (n>1.7) and a low refractive index (n<1.7) and can be configured as a Bragg reflector. For example, the layer thickness can be λ / 4 or a multiple of λ / 4, where λ indicates the wavelength of the light to be reflected. The first or second resonator mirror 120, 110 can, for example, have 2 to 50 different layers.A typical layer thickness of the individual layers can be approximately 30 to 90 nm, for example approximately 50 nm. The layer stack can further contain one or two or more layers that are thicker than approximately 180 nm, for example, thicker than 200 nm.

[0032] For example, the second resonator mirror 110 may have a total reflectivity of 99.8% or more for the laser radiation.

[0033] For example, the active region 125 may include an active layer 126 intended for generating radiation. The active layer 126 of the active region 125 may, for example, include a pn junction, a double heterostructure, a single quantum well (SQW) structure, or a multi-quantum well (MQW) structure for generating radiation. The term "quantum well structure" has no significance with regard to the dimensionality of the quantization. It thus encompasses, among other things, quantum wells, quantum wires, and quantum dots, as well as any combination of these layers. For example, the active region 125 may be based on a nitride, a phosphide, or an arsenide compound semiconductor. For example, the substrate 100 may contain GaN, GaP, or GaAs, and the active region 125 may each include semiconductor materials containing GaN, GaP, or GaAs.Cladding layers, for example, made of n- or p-doped semiconductor layers, can be adjacent to the active layer 126. Overall, the layer thickness of the active region 125 is at least equal to the effective emitted wavelength (λ / n, where n corresponds to the refractive index of the active region), so that standing waves can form within the resonator. For example, the layer thickness of the active layer 126 is several tens of nm, and the layer thickness of the cladding layers can each be approximately 10 to 20 nm.

[0034] The second resonator mirror 110 is arranged between the active region 125 and the substrate 100. The first resonator mirror 120 and the second resonator mirror 110 form an optical resonator for the electromagnetic radiation 20 generated in the active region 125. For example, the first resonator mirror 120 and the second resonator mirror 110, together with the active region 125, are integrated into the semiconductor body 109 of the optoelectronic semiconductor device 10. The first resonator mirror 120 is designed as an output mirror for the laser radiation generated in the resonator by means of induced emission and, for example, has a lower reflectivity than the second resonator mirror 110. Electromagnetic radiation 20 generated in the active region 125 is emitted from the optoelectronic component in the vertical direction.For example, the second resonator mirror 110 has a plurality of semiconductor layer pairs, each with a high refractive index difference, for example. The layers of the first resonator mirror 120 and the layers of the second resonator mirror 110 can be produced epitaxially, for example. According to further embodiments, the first and / or second resonator mirrors can be constructed from dielectric layers.

[0035] For example, a second contact element 130 can be arranged adjacent to a second main surface 102 of the substrate. The second contact element 130 can be electrically connected to a second connection region 132 and to the second resonator mirror 110. Furthermore, a first contact element 135 can be arranged adjacent to a first main surface 121 of the first resonator mirror 120 and electrically connected thereto. The first contact element 135 can, for example, be connected to a first connection region 137 of the first optoelectronic component. The first and second contact elements 130, 135 can, for example, contain an electrically conductive material. If the resonator mirrors are each constructed from dielectric material, the first contact element 135 and the second contact element 130 can each be electrically connected to the active region 125.For example, the first contact element 135 can be connected to the first cladding layer, for example of the first conductivity type, of the active region 125. The second contact element 130 can be connected to the second cladding layer, for example of the second conductivity type, of the active region 125.

[0036] The first optoelectronic component 15 represents a semiconductor laser which is electrically pumped, for example, via the first contact element 135 and the second contact element 130.

[0037] For example, the first contact element 135 can be recessed over a central region of the first optoelectronic component. For example, the first contact element 135 can extend in a ring-like manner over an edge region of the first optoelectronic component. In this way, absorption of the emitted laser radiation in the first contact element 135 can be avoided or reduced.

[0038] According to embodiments, the layers of the first resonator mirror 120 can be doped with dopants of a first conductivity type, for example, p-type or n-type. For example, the layers of the second resonator mirror 110 can be doped with a second conductivity type, for example, n-type or p-type. According to further embodiments, only selected layers of the layer sequence of the resonator mirrors 110, 120 can be doped accordingly. The substrate 100 can be doped, for example, with dopants of the second conductivity type.

[0039] Fig. 2B shows a schematic cross-sectional view of an example of a second optoelectronic component 16. According to embodiments, the second optoelectronic component 16 may have the same layer structure as the first optoelectronic component 15. According to further embodiments, certain regions may be formed alternatively. For example, the first and second resonator mirrors may be omitted, and the second optoelectronic component 16 may have only the active region 125. For example, the active region 125 of the second optoelectronic component 16 may be formed identically to the active region 125 of the first optoelectronic component 15.

[0040] The second optoelectronic component 16 is suitable for receiving electromagnetic radiation 25. For example, this can be achieved by connecting the first contact element 135 and the second contact element 130 to potentials in a suitable manner such that the second optoelectronic component 16 is operated in the reverse direction. The first contact element 135 is connected to a first connection region 138. The second contact element 130 is connected to a second connection region 133 of the second optoelectronic component. For example, the first connection region 137 of the first optoelectronic component can be connected to the second connection region 133 of the second optoelectronic component. According to further embodiments, the second connection region 132 of the first optoelectronic component 15 can also be connected to the first connection region 133 of the second optoelectronic component 16.Furthermore, it is conceivable that the first connection region 137 of the first optoelectronic component is connected to the first connection region 138 of the second optoelectronic component. Furthermore, the second connection region 132 of the first optoelectronic semiconductor component can be connected to the second connection region 133 of the second optoelectronic semiconductor component.

[0041] Fig. 2C shows a connection region between a first optoelectronic component 15 and a second optoelectronic component 16 according to embodiments. For example, in the region of the first optoelectronic component 15, an insulating layer 127 and a conductive material 129 can be introduced between the second resonator mirror 110 and the substrate 100. In this way, the layer stack with the second resonator mirror is electrically connected to the conductive material 129. The conductive material 129 is, as in Fig. 2C further illustrates, the first contact element 135 of the second optoelectronic component 16 is guided to the surface of the layer stack or semiconductor body 109 and electrically connected to the first contact element 135 of the second optoelectronic component 16. In this way, for example, the second connection region 132 of the first optoelectronic component 15 can be connected to the first connection region 138 of the second optoelectronic component 16. Of course, the first and second optoelectronic components can also be interchanged. In this way, it is possible to connect the second connection region 133 of the second optoelectronic component to the first connection region 137 of the first optoelectronic component 15.

[0042] Fig. 2D shows a cross-sectional view of an optoelectronic semiconductor device 10 according to further embodiments. According to these embodiments, the optoelectronic semiconductor device 10 may be configured as a flip-chip component. The optoelectronic semiconductor device 10 comprises a first optoelectronic component 15 and a second optoelectronic component 16 formed on a common substrate 100. The first and second optoelectronic components are each similar to the Fig. 2A and Fig. 2B. However, the second contact element 130 is connected via a via contact 113 to a common connection region 134, which is arranged in the region of a light-emitting surface 106 of the optoelectronic semiconductor device 10. In this way, the optoelectronic semiconductor device 10 is arranged exclusively via connection regions 134, 137, 138 in the region of the light-emitting surface 106 of the optoelectronic semiconductor device 10. The generated electromagnetic radiation is emitted via the light-emitting surface 106. For example, the via contact 113 extends from the common substrate 100 to a light-emitting surface 106 of the optoelectronic semiconductor device 10.

[0043] The optoelectronic components have first and second cladding layers 114, 115. An active layer 126, which may contain, for example, a multiple quantum well structure, is arranged between the first and second cladding layers. The active region 125 may further comprise a third cladding layer 116 and an opening (aperture) 117. The insulation elements 107 may further be insulated from the active region by an insulating material 104, which may contain, for example, silicon oxide. The common substrate 100 may be conductive or coated with a conductive material. The active region 125 may each be connected to the associated connection regions 137, 138 of the first or second optoelectronic component via first contact elements 135. The active region 125 may further be connected to the second contact element 130 via a contact layer 131.

[0044] Fig. 2E shows the example in Fig. 2D, which is mounted on a suitable carrier 105, for example, a circuit board or a housing. Radiation 20 emitted by the first optoelectronic component 15 can be reflected by the optical element 200 and absorbed or received by the second optoelectronic component. For example, conductive traces can be provided in the carrier 105 so that a corresponding voltage can be applied to the connection regions of the first and second optoelectronic components.

[0045] According to an alternative interpretation, an optoelectronic semiconductor device 10 comprises an arrangement of optoelectronic components 15, 16, each having an identical layer structure. At least one part of the optoelectronic components 15 is suitable for acting as a surface-emitting diode laser, and at least another part of the optoelectronic components 16 is suitable for acting as a device for receiving electromagnetic radiation.

[0046] Fig. 3A shows a top view of an optoelectronic semiconductor device according to embodiments. As can be seen, the optoelectronic semiconductor device comprises a first arrangement 140 of first optoelectronic components 15. A second arrangement 150 of second optoelectronic components 16 is arranged in the central region of the arrangement. The second arrangement 150 is spatially separated by insulation elements 107, such that, for example, the first contact element 135 of the first optoelectronic component 15 is insulated from the first contact element 135 of the second optoelectronic component 16. For example, the first contact elements 135 of the second optoelectronic component 16 can be connected to a first connection region 138 arranged at the edge of the optoelectronic device. As shown in Fig. As further illustrated in Figure 3A, the second arrangement 150 occupies a significantly smaller area than the first arrangement 140. For example, the second arrangement 150 may comprise fewer than 20, for example, fewer than 10, second optoelectronic components 16. The large part of the first arrangement 140 may, for example, be used as a light source for applications, while the small area 150 is used as a photodetector.

[0047] If the electromagnetic radiation emitted by the first optoelectronic components 15 is detected by the optical element 200, which is Fig. 1, a photocurrent can be generated in the second optoelectronic components. This photocurrent can be used to check that the optical element 200 is still properly attached. According to further embodiments, the optoelectronic device can also be operated in a pulsed mode using a time-division multiplexing method. In this case, light can be emitted briefly through the first region 140; in the other time periods, the second arrangement can be switched as a photodiode. In this case, for example, the second arrangement can occupy a larger area than the first arrangement.

[0048] Fig. 3B shows a further possible embodiment of the optoelectronic semiconductor device 10. Unlike in Fig. 3A, the second arrangement 150 is arranged in an edge region. Accordingly, for example, the second arrangement 150 can only be adjacent to the first arrangement 140 on one or two sides. According to the Fig. 3A, for example, the second region 150 may be almost completely surrounded by the first arrangement 140.

[0049] Fig. 3C shows a schematic representation in which the second arrangement 150 is adjacent to the first arrangement 140 on two sides.

[0050] Fig. Figure 4A shows a circuit diagram of the optoelectronic device according to embodiments. As can be seen, the second terminal region 132 of the first optoelectronic component 15 is short-circuited to the first terminal region 138 of the second optoelectronic component 16. Furthermore, the first optoelectronic component 15 is forward-biased, while the second optoelectronic component 16 is reverse-biased.

[0051] Fig. 4B shows a schematic top view of a second main surface 102 of the substrate 100. As can be seen, the second connection region 132 of the first optoelectronic component 15 and the first connection region 138 of the second optoelectronic component 16 are connected to one another by a common electrode. The first connection region 137 of the first optoelectronic component is insulated from this common connection. Furthermore, the second connection region 133 of the second optoelectronic component 16 is insulated from the common connection. A photocurrent generated in the second optoelectronic component 16 can, as in Fig. 4B, can be measured by the measuring device 155 to determine whether the optical element 200 is attached as intended and reflects light. As soon as it is detected that the photocurrent falls below a prescribed threshold, the optoelectronic device 10 can be switched off by the control device 160. The level of the detected photocurrent can depend, for example, on the size of the second arrangement 150, i.e., for example, on the number of second optoelectronic components 16 within the second arrangement 150.

[0052] Fig. 4C shows a circuit diagram of the optoelectronic device according to further embodiments. As can be seen, the second terminal region 132 of the first optoelectronic component 15 is short-circuited to the second terminal region 133 of the second optoelectronic component 16. Furthermore, the first optoelectronic component 15 is operated in the forward direction, while the second optoelectronic component 16 is connected upstream in the reverse direction.

[0053] Fig. 5A shows an optoelectronic device 10 in which the optical element 200 directly adjoins the array of first and second optoelectronic components. For example, the optical element 200 can directly adjoin the first contact element 135. For example, concave regions of the array of microlenses 205 can be arranged on the side of the optical element facing away from the substrate 100. In this case, the electromagnetic radiation emitted by the first optoelectronic components is reflected at the first main surface 201 of the optical element 200. The further elements of the Fig. 5A are as described with reference to Fig. 1. According to Fig. 5A, the isolation trenches can only extend to the depth of the optoelectronic components. Fig. The arrangement shown in Figure 5A is particularly compact.

[0054] According to Fig. In the embodiments shown in FIG. 5B, the optoelectronic device 10 may further include a deflection element 207, which may be incorporated into the optical element 200. For example, a plurality of deflection elements 207 may be incorporated or integrated into the optical element 200. These deflection elements may, for example, have two mutually inclined totally reflecting surfaces. These may be arranged such that light beams from parts of the first arrangement 140 of first optoelectronic components 15 are directed in a targeted manner onto the second arrangement 150 of second optoelectronic components 16. In this way, the photocurrent can be increased or, with an approximately constant photocurrent, the size of the second arrangement 150 can be reduced.

[0055] The described arrangement makes the size of the optoelectronic semiconductor device more compact. An optoelectronic semiconductor device is described in which it is possible to emit electromagnetic radiation and, for example, to measure light reflected by the optical element, and which can be constructed in a particularly compact manner. Furthermore, the wiring of the corresponding connections can be implemented easily without special wiring elements. Furthermore, the first and second optoelectronic components can be manufactured using common manufacturing processes, making the device cost-effective.

[0056] Fig. 6A shows a mobile terminal 30 with the described optoelectronic device 10. The mobile terminal 30 can be, for example, a notebook, a smartphone, a tablet, or another device suitable for mobile communication. For example, the laser light source of the first arrangement 140 with first optoelectronic components 15 can be used for applications of the mobile terminal 30, such as distance measurement and others.

[0057] Fig. 6B shows an optical device 35 with the optoelectronic device 10 according to embodiments. For example, the laser light source of the first arrangement 140 with first optoelectronic components 15 can perform numerous functions of the optical device 35. Examples include distance measurement, 2D and / or 3D sensing / scanning, illumination, proximity sensing, spectrometry, reflective light barriers, and others. The optical device can be part of a larger component, for example, for automotive applications, smart home applications, industrial applications, and others.

[0058] In general, there is a risk with such devices that, for example, the Fig. 1, Fig. 5A and Fig.5B detaches, and the laser radiation can directly harm the user. The described optoelectronic device allows for monitoring detachment of the optical element 200 without requiring an increase in the size of the mobile terminal 30 or the optical device or the provision of complex wiring. As a result, eye safety can be increased in a mobile terminal. LIST OF REFERENCE SYMBOLS 10 Optoelectronic semiconductor device 15 first optoelectronic component 16 second optoelectronic component 20 emitted radiation 25 radiation to be absorbed 30 mobile devices 35 optical device 100 substrate 101 first main surface of the substrate 102 second main surface of the substrate 104 insulating material 105 carriers 106 light emission surface 107 Insulation element 109 semiconductor bodies 110 second resonator mirror 113 Via contact 114 first cladding layer 115 second cladding layer 116 third mantle layer 117 Opening 120 first resonator mirror 121 first main surface of the first resonator mirror 125 active area 126 active layer 127 Insulation layer 128 Sidewall insulation 129 conductive layer 130 second contact element 131 Contact layer 132 second connection area of ​​the first optoelectronic component 133 second connection area of ​​the second optoelectronic component 134 common connection area 135 first contact element 137 first connection area of ​​the first optoelectronic component 138 first connection area of ​​the second optoelectronic component 140 first arrangement 150 second arrangement 155 Measuring device 160 control device 200 optical element 201 first main surface of the optical element 205 Microlens 207 Deflection element

Claims

[1] Optoelectronic semiconductor device (10) comprising an optical element and a first arrangement (140) of first optoelectronic components (15) and a second arrangement (150) of second optoelectronic components (16) arranged in a substrate (100), wherein the optical element (200) is arranged above the first and above the second arrangement (140, 150) of first and second optoelectronic components (15, 16), wherein the first optoelectronic components (15) each comprise a first resonator mirror (120) with a first main surface (121), an active region (125) suitable for generating radiation, and a second resonator mirror (110), each of which is arranged one above the other along a first direction, wherein radiation (20) emitted by the optoelectronic component (15) is emitted via the first main surface (121), and is suitable for emitting electromagnetic radiation (20), the optical element (200) is an array of microlenses (205), and the optical element (200) contains additional deflection elements (207) that are suitable for directing incident radiation onto a predetermined region of the second arrangement (150), and the second optoelectronic components (16) each comprise an active region (125) suitable for generating radiation and are suitable for receiving electromagnetic radiation (25). [2] Optoelectronic semiconductor device (10) according to claim 1, wherein the first optoelectronic components (15) form surface-emitting laser diodes. [3] Optoelectronic semiconductor device (10) according to claim 1 or 2, wherein the active region (125) of each of the first optoelectronic components (15) is identical to the active region of each of the second optoelectronic components (16). [4] Optoelectronic semiconductor device (10) according to one of claims 1 to 3, wherein the first arrangement (140) occupies a larger area than the second arrangement (150). [5] Optoelectronic semiconductor device (10) according to claim 4, wherein the second arrangement (150) is arranged in a central region within the first arrangement (140). [6] Optoelectronic semiconductor device (10) according to claim 4, wherein the second arrangement (150) is arranged in an edge region of the first arrangement (140). [7] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the optical element (200) directly adjoins a surface of the optoelectronic components. [8] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the second optoelectronic components (16) are suitable for detecting electromagnetic radiation emitted by the first optoelectronic components (15). [9] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the first optoelectronic components (15) are each electrically connected to one another via at least a part of the common substrate (100). [10] Optoelectronic semiconductor device (10) according to one of the preceding claims, wherein the second optoelectronic components (16) are each electrically connected to one another via at least a part of the common substrate (100). [11] Optoelectronic semiconductor device (10) according to one of the preceding claims, further comprising an insulation element (107) isolating the first arrangement (140) from the second arrangement (150). [12] Optoelectronic semiconductor device (10) according to one of the preceding claims, in which the first and the second optoelectronic component (15, 16) each contain a first connection region (137, 138) and also a second connection region (132, 133, 134), via which the active region can be electrically contacted. [13] Optoelectronic semiconductor device (10) according to claim 12, wherein the first connection region (137, 138) of each of the first and the second optoelectronic component (15, 16) and a common connection region (134) are arranged in the region of a light emission surface (106) of the optoelectronic semiconductor device (10). [14] Mobile terminal (30) or optical device (35) comprising the optoelectronic semiconductor device (10) according to one of claims 1 to 13. [15] Mobile terminal (30) according to claim 14, which is selected from a smartphone, a laptop, a tablet or a phablet. [16] Optical device (35) according to claim 14, which is selected from a distance measuring device, a 2D and / or 3D sensor or 2D and / or 3D scanner, an illumination device, a proximity sensor, a spectrometer or a reflection light barrier.

Images