Light-emitting device package and display panel with the same

Abstract

Light-emitting device package comprising: a plurality of light-emitting structures (130) spaced apart from one another, each of the plurality of light-emitting structures comprising a first conductivity-type semiconductor layer (131), an active layer (132), a second conductivity-type semiconductor layer (133), a first surface provided by the first conductivity-type semiconductor layer (131), and a second surface provided by the second conductivity-type semiconductor layer (133), wherein the first surface is opposite the second surface; a common first electrode (170N) extending parallel to the first and second surfaces of the plurality of light-emitting structures (130) on a plane distinct from the planes of the first and second surfaces, wherein the common first electrode (170N) connects respective first conductivity-type semiconductor layers (131) of the plurality of light-emitting structures (130) and comprises at least one of tungsten and tungsten silicide; a plurality of second electrodes (141) arranged on the second surfaces of the plurality of light-emitting structures (130) and connected to respective second conductivity-type semiconductor layers (133) of the plurality of light-emitting structures (130); a plurality of wavelength converters (190R, 190G, 190B) arranged on the first surfaces and spaced apart from each other to correspond to the plurality of light-emitting structures (130); and a shaped section (160) covering side surfaces of the plurality of light-emitting structures (130) and side surfaces of the plurality of wavelength transducers (190R, 190G, 190B), wherein the shaped section (160) has a partition structure separating the plurality of wavelength transducers (190R, 190G, 190B) from one another, and having a material having an elastic modulus lower than that of the plurality of light-emitting structures (130), wherein the common first electrode (170N) is aligned on a surface arranged parallel between the first surfaces and the second surfaces, characterized by the fact that the common first electrode has (170N): a plurality of individual electrode sections (170NA) arranged in an area overlapping the plurality of light-emitting structures and connected to the respective first conductivity-type semiconductor layers (131); at least one pad section (170NC) arranged in an area that does not overlap the majority of light-emitting structures (130); and a connecting section (170NB) that connects the majority of individual electrode sections (170NA) together and connects at least one of the majority of individual electrode sections (170NA) to the at least one pad section (170NC), wherein each of the plurality of individual electrode sections (170NA) is arranged to surround a perimeter of an area of ​​a corresponding light-emitting structure (130).

Description

Background 1. Area

[0001] Exemplary embodiments of the disclosure relate to a light-emitting device package and a display field using the same. 2. Description of similar prior art

[0002] Light-emitting semiconductor diodes (LEDs) have been used as light sources for various electronic products and lighting devices. In particular, LED devices are widely used as light sources for various types of displays, such as TVs, mobile phones, PCs, laptops, and PDAs.

[0003] Prior art display panels contain display fields, conventional liquid crystal display (LCD) panels, and backlight units; however, display devices have recently been developed that use an LED as a single pixel and thus do not require additional black light. Such display panels can be compact and can implement high-luminosity displays with improved optical efficiency compared to prior art LCD displays. Furthermore, such display panels allow for freely changing the aspect ratio of a display image and can accommodate large display areas, thus enabling various forms of large displays.

[0004] US 2019 / 0157515A1 discloses a light-emitting device package comprising a light-emitting structure with a plurality of light-emitting areas configured to each emit light; a plurality of light-adjusting layers formed over the light-emitting areas to modify the properties of the light emitted by the light-emitting areas; a plurality of electrodes configured to control the light-emitting areas to each emit light; and an insulating layer arranged between the light-emitting areas to isolate the light-emitting areas from one another, the insulating layer forming a continuous structure with respect to the light-emitting areas.

[0005] US 2017 / 0 250 318 A1 reveals in Fig. 15 and the accompanying description, a light-emitting device package. Summary

[0006] One or more embodiments provide a light-emitting device package and a display field, which enable a reduction in manufacturing costs and the achievement of miniaturization, as well as a method for manufacturing them.

[0007] One or more embodiments also provide a method for manufacturing a flexible display field.

[0008] According to one aspect of an embodiment, a light-emitting device package is provided, comprising: a plurality of light-emitting structures spaced apart from one another, each of the plurality of light-emitting structures having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a first surface provided by the first conductivity-type semiconductor layer, and a second surface provided by the second conductivity-type semiconductor layer, the first surface being opposite the second surface;a common first electrode extending parallel to the first and second surfaces of the plurality of light-emitting structures on a plane distinct from the planes of the first and second surfaces, the common first electrode connecting respective first conductivity-type semiconductor layers of the plurality of light-emitting structures and comprising at least one of tungsten (W) and tungsten silicide (WS); a plurality of second electrodes arranged on the second surfaces of the plurality of light-emitting structures and connected to respective second conductivity-type semiconductor layers of the plurality of light-emitting structures; a plurality of wavelength converters arranged on the first surfaces and spaced apart to correspond to the plurality of light-emitting structures;and a shaped section covering side surfaces of the plurality of light-emitting structures and side surfaces of the plurality of wavelength transducers, wherein the shaped section has a partition structure separating the plurality of wavelength transducers from each other, and has a material having an elastic modulus lower than the elastic modulus of the plurality of light-emitting structures.

[0009] According to one aspect of an embodiment, a light-emitting device package is provided, comprising: a plurality of light-emitting structures spaced apart from one another, each of the plurality of light-emitting structures having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a first surface provided by the first conductivity-type semiconductor layer, and a second surface provided by the second conductivity-type semiconductor layer, the first surface being opposite the second surface; a plurality of wavelength converters arranged to correspond to the plurality of light-emitting structures and spaced apart from one another;a shaped section that covers side surfaces of the plurality of light-emitting structures and side surfaces of the plurality of wavelength transducers and separates the plurality of light-emitting structures and the plurality of wavelength transducers from each other; a common first electrode that connects respective first conductivity-type semiconductor layers of the plurality of light-emitting structures, wherein the common first electrode extends parallel to the first surface and the second surface on a plane that is distinct from the planes of the first surface and the second surface; and a plurality of second electrodes that are each connected to second conductivity-type semiconductor layers on second surfaces of the plurality of light-emitting structures.

[0010] According to one aspect of an embodiment, a display field is provided comprising: a first substrate structure having a plurality of light-emitting device packages arranged in rows and columns, each of the plurality of light-emitting device packages providing at least one pixel;and a second substrate structure comprising a plurality of thin-film transistor (TFT) cells, each corresponding to a plurality of light-emitting device packages and aligned on a lower section of the first substrate structure, wherein the plurality of light-emitting device packages comprise: a plurality of light-emitting structures spaced apart from one another and providing a plurality of subpixels of a pixel, each of the plurality of light-emitting structures comprising a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a first surface provided by the first conductivity-type semiconductor layer, and a second surface provided by the second conductivity-type semiconductor layer, the first surface being opposite the second surface;a common first electrode connecting the respective first conductivity-type semiconductor layers of the plurality of light-emitting structures and extending parallel to each other on a plane distinct from the planes of the first and second surfaces of the plurality of light-emitting structures; a plurality of second electrodes arranged on the second surfaces of the plurality of light-emitting structures and connected to respective second conductivity-type semiconductor layers of the plurality of light-emitting structures; a plurality of wavelength converters arranged on the first surfaces and spaced apart to correspond to the plurality of light-emitting structures; a shaped section covering side surfaces of the plurality of light-emitting structures and side surfaces of the plurality of wavelength converters;and a first electrode pad and a second electrode pad that pass through the shaped section and each connect each of the common first electrode and the plurality of second electrodes to a connecting section of the second substrate structure. Brief description of the drawings

[0011] For a clearer understanding of the above-mentioned and / or other aspects of the disclosure, the following description of the exemplary embodiments in conjunction with the accompanying drawings is provided, wherein: Fig. 1 a schematic perspective view of a display field with a light-emitting device package according to an embodiment of the disclosure; Fig. 2 a top view of section 'A' Fig. 1 is; Fig. 3 a cross-sectional side view along line II' from Fig. 2 is; Fig. 4A an enlarged view of section 'B' from Fig. 3 is; Fig. 4B a comparative example of a display field from Fig. 4A represents; Fig. 5 a cross-sectional side view of a display field according to an embodiment of the disclosure; Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15 to Fig. Sixteen schematic views are shown, illustrating a key process in the manufacturing of the display panel. Fig. 3 represent; and Fig. 17, Fig. 18, Fig. 19 to Fig. There are 20 schematic views that illustrate a key process in the manufacturing of the display panel. Fig. 5. Detailed description

[0012] The following are detailed descriptions of exemplary embodiments of the disclosure with reference to the accompanying drawings.

[0013] Fig. Figure 1 is a schematic top view of a display field with a light-emitting device package according to an embodiment of the disclosure and Fig. Figure 2 is a top view of section 'A'. Fig. 1. Fig. 3 is a cross-sectional side view along line II' from Fig. 2 and Fig. 4A is an enlarged view of section 'B' from Fig. 3.

[0014] Referring to Fig. According to one embodiment of the disclosure, a display field 1 comprises a first substrate structure 100 containing a light-emitting diode (LED) package, and a second substrate structure 300 arranged in a lower section of the first substrate structure 100 and containing a control circuit unit. A protective layer 400 may be arranged on an upper surface of the first substrate structure 100, and a bonding layer 200 may be arranged between the first substrate structure 100 and the second substrate structure 300. The display field 1 may have a rectangular shape or any other suitable shape. The display field 1 may exhibit flexibility. Thus, the upper surface of the display field 1 may have a profile with a flat surface and / or a curved surface.The display field 1 according to one embodiment can be a display field that is ultra-compact and has a high resolution, and can be used for a virtual reality or augmented reality headset.

[0015] Referring to Fig. 2. The first substrate structure 100 can contain a pixel area 10 and a shape area 20 surrounding the pixel area 10. Within the pixel area 10, a plurality of pixels P can be aligned in a column and a row. It is shown that, according to one embodiment, the plurality of pixels P form an array in a rectangular shape of 15 × 15. However, this is merely an example for the sake of simplicity, and the number of columns and rows can be any reasonable number (for example, 1024 × 768, 1920 × 1080, 3840 × 2160, and 7680 × 4320). The plurality of pixels can be aligned in various shapes other than a rectangle. The plurality of pixels P can be electrically interconnected. Furthermore, the plurality of pixels P may not be manufactured individually or separately, but rather simultaneously in the same operation.

[0016] In one embodiment, the plurality of pixels P can be arranged such that they have a density equal to or greater than 8000 pixels per inch (PPI). Each of the plurality of pixels P can have a width of approximately 3 µm or less.

[0017] The form area 20 can be arranged around the pixel area 10. The form area 20 can contain a black matrix. For example, the black matrix is ​​arranged in a peripheral region of the first substrate structure 100 to serve as a guideline defining an area in which the majority of pixels P are aligned. The black matrix is ​​not limited to black. Depending on the purpose or use of the products, a white or green matrix can be used as the black matrix, and depending on an embodiment, a matrix formed from transparent material can be used instead of the black matrix. A pad section 170NC of a common first electrode 170N, which will be described later, can be arranged in the form area 20.

[0018] Referring to Fig. 3 and Fig. 4A Each of the plurality of pixels P can contain a first substrate structure 100 and a second substrate structure 300, stacked vertically. The first substrate structure 100 and the second substrate structure 300 can be bonded by the bonding layer 200. The protective layer 400 can be bonded to an upper section of the first substrate structure 100. The first substrate structure 100 and the second substrate structure 300 can be bonded together and integrated by using a wafer bonding process, such as melt bonding on a wafer layer.

[0019] The plurality of pixels P can be configured as a plurality of pixels containing a first pixel P1 and a second pixel P2. For simplicity, the first and second pixels P1 and P2 are described primarily below. Both the first and second pixels P1 and P2 contain a plurality of subpixels SP1, SP2, and SP3, and each of the plurality of subpixels SP1, SP2, and SP3 can contain a first light-emitting semiconductor section LED1, a second light-emitting semiconductor section LED2, and a third light-emitting semiconductor section LED3. In one embodiment, each of the plurality of subpixels SP1, SP2, and SP3 can have a width WD of approximately 1.2 µm or less.

[0020] The first substrate structure 100 can include a light-emitting device package LP1, which contains the first to third light-emitting semiconductor sections LED1, LED2, and LED3. The light-emitting device package LP1 can include: a first electrode pad 175N and a second electrode pad 175P, each connected to the first to third light-emitting semiconductor sections LED1, LED2, and LED3; a first wavelength converter 190R, a second wavelength converter 190G, and a third wavelength converter 190B, each arranged on the first to third light-emitting semiconductor sections LED1, LED2, and LED3; and a shaped section 160, which encapsulates the light-emitting semiconductor sections LED1, LED2, and LED3 as well as the first to third wavelength converters 190R, 190G, and 190B.The shaped section 160 can contain a first shaped section 161, a second shaped section 162 and a third shaped section 163.

[0021] Each of the first to third light-emitting semiconductor sections LED1, LED2, and LED3 can contain a light-emitting structure 130 in which epitaxial layers, such as a first conductivity-type semiconductor layer 131, an active layer 132, and a second conductivity-type semiconductor layer 133, are stacked. The epitaxial layers can be grown on a wafer using the same process. Thus, the active layers 132 of the first to third light-emitting semiconductor sections LED1, LED2, and LED3 can be configured to emit the same light.

[0022] For example, active layer 132 can emit blue light (for example, light with a wavelength in the range of 440 nm to 460 nm). The first to third light-emitting semiconductor sections, LED1, LED2, and LED3, can have the same structure.

[0023] The first conductivity-type semiconductor layer 131 and the second conductivity-type semiconductor layer 133 can each be an n-type and a p-type semiconductor layer, respectively. For example, the semiconductor layer can be a nitride semiconductor made of Al x In y Ga (1-x-y)N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). The active layer 132 can have a multiple quantum well (MQW) structure in which quantum well layers and quantum barrier layers are stacked alternately. For example, the active layer 132 can be a nitride-based MQW, such as InGaN / GaN or GaN / AlGaN, but is not limited to this. Alternatively, the active layer can be another semiconductor, such as GaAs / AlGaAs, InGaP / GaP, or GaP / AlGaP. Of these, some regions of the first conductivity-type semiconductor layer 131 can be selectively etched to exhibit a stepped side surface.

[0024] Referring to Fig. 4A A light-emitting structure 130 can be formed to allow the width W1 of the first surface S1, which touches the wavelength converter 190R, to be greater than the width W3 of the second surface S2 in a lower section. Additionally, the width W1 of an upper surface of the light-emitting structure 130 is formed such that it is smaller than the width W2 of the wavelength converter 190R, so that the light-emitting structure 130 can be arranged in a restricted area that overlaps the wavelength converter 190R. Due to such a structure, light L1 emitted through the active layer 132 of the light-emitting structure 130 can be emitted in an upward direction through the wavelength converter 190R without any obstructions along an optical path.That is, the first conductivity-type semiconductor layer 131 can have a structure in which a lower first conductivity-type semiconductor layer 131B with a narrower width is arranged in a section of an upper first conductivity-type semiconductor layer 131A. Additionally, the upper first conductivity-type semiconductor layer 131A can be arranged such that it protrudes from a first shaped section 161, which will be described later, by a predetermined thickness D.

[0025] An insulating layer 150 is arranged on a side surface of the light-emitting structure 130 and blocks optical interference between the majority of the light-emitting structures 130, while also electrically isolating them. Furthermore, the insulating layer 150 can be arranged to contact a common first electrode 170N, which will be described later. The insulating layer 150 can be made of a material with electrical insulating properties. For example, the insulating layer 150 can be silicon oxide, silicon oxynitride, or silicon nitride. The insulating layer 150 can also be a material with low light absorption or low reflectivity, or it can have a reflective structure.

[0026] The common first electrode 170N (see) can be placed on the first conductivity-type semiconductor layer 131 and the second conductivity-type semiconductor layer 133. Fig. 2) and a second electrode 141. The common first electrode 170N can connect the first conductivity-type semiconductor layers 131 contained in the majority of light-emitting structures 130. The first and second electrode pads 175N and 175P for applying power to each of the first to third light-emitting semiconductor sections LED1, LED2, and LED3 can be included. The first and second electrode pads 175N and 175P can each be connected to the common first electrode 170N and the second electrode 141, respectively.

[0027] Referring to Fig. 2 and Fig. 4A The common first electrode 170N can comprise a single electrode section 170NA, a pad section 170NC, and a connecting section 170NB. The single electrode section 170NA can be arranged in an area that overlaps the majority of light-emitting structures 130 and can be connected to each of the first conductivity-type semiconductor layers 131. Each of the individual electrode sections 170NA can be arranged to have a ring shape to surround the periphery (or circumference) of the lower first conductivity-type semiconductor layer 131B on a surface of the upper first conductivity-type semiconductor layer 131A of the light-emitting structure 130. Such a structure allows for the rapid distribution of a current supplied to the light-emitting structure 130 within the individual electrode section 170NA.

[0028] The pad section 170NC can be positioned within the form area 20 of the display field 1 to avoid overlapping the majority of light-emitting structures 130. For example, the pad section 170NC can be positioned in any corner of the display field 1. The connecting section 170NB can connect the majority of individual electrode sections 170NA and can connect the individual electrode section 170NA to the pad section 170NC.

[0029] The common first electrode 170N is arranged on a surface parallel to the first surface S1 and the second surface S2 of the light-emitting structure 130 and can thus electrically connect side surfaces of a plurality of first conductivity-type semiconductor layers 131. Therefore, the first electrode pad 175N and the second electrode pad 175P, which are arranged to apply power to the common first electrode 170N and the second electrode 141, can be configured to be located in distinct regions. That is, the first electrode pad 175N can be arranged to contact the pad section 170NC located in the form area 20 of the display field 1, while the second electrode pads 175P can be located in lower sections of the plurality of light-emitting structures 130.The common first electrode 170N can be made of a high-melting-point material, such as tungsten (W) and tungsten silicide (WS). During a fabrication process, the common first electrode 170N is embedded in the first conductivity-type semiconductor layer 131 and then exposed by etching a portion of the first conductivity-type semiconductor layer 131. A high-temperature heat treatment is then performed to improve the contact performance of the light-emitting structure. The high-melting-point material, such as tungsten (W) and tungsten silicide (WS), is not dissolved in this process. However, if a material has a relatively low melting point, it may be damaged during high-temperature heat treatment and therefore cannot function as an electrode.

[0030] The shaped section 160 may include: a first shaped section 161 covering a side surface of the first to third light-emitting semiconductor sections LED1, LED2 and LED3, a second shaped section 162 with a partition structure protruding between the first to third light-emitting semiconductor sections LED1, LED2 and LED3 to separate the first to third wavelength converters 190R, 190G and 190B from each other, and a third shaped section 163 exposing the first and second electrode pads 175N and 175P while covering the first shaped section 161.

[0031] The formed section 160 can be made of a material with a low modulus of elasticity, allowing the first substrate structure 100 to exhibit flexible properties. In detail, the first formed section 161 can be made of a material with a lower modulus of elasticity than that of the light-emitting structure 130 and with high tensile strength. For example, the first formed section 161 can be made of a material containing polyimide (PI), polycyclohexylenedimethyl terephthalate (PCT), and an epoxy resin compound (EMC). Furthermore, the first formed section 161 can contain light-reflecting particles for reflecting light. These light-reflecting particles can be formed using titanium dioxide (TiO2) or aluminum oxide (Al2O3), but are not limited to these materials.

[0032] In one embodiment, the first formed section 161 can be made of polycyclohexylenedimethyl terephthalate (PCT) and a white epoxy resin molding compound (white EMC) and exhibit high reflectivity. In this case, a sufficient light reflection effect can be expected based on the first formed section 161, even without an additional reflective layer. However, since the melting point of the material of the first formed section 161 is equal to or less than 230°C, the material may melt in a bonding process carried out at a temperature of 350°C or more. In this case, the appearance of the first formed section 161 is deformed and it cannot function as a mold.Thus, a third formed section 163 can be provided on a lower section of the first formed section 161, wherein the third formed section 163 is a layer of material, such as polyimide (PI), with a sufficiently high melting point so that the material does not melt during a bonding process. For example, the third formed section 163 can contain at least one of polyimide (PI) and polyphenylenebenzobisoxazole (PBO). In this respect, even if the first formed section 161 is melted during a bonding process, its appearance is maintained, so that its function as a form can also be preserved.

[0033] The second shaped section 162 is configured to have a partition structure surrounding the side surfaces of the first to third wavelength converters 190R, 190G, and 190B, thus separating them from one another. This allows the first to third wavelength converters 190R, 190G, and 190B to be separated and located in the upper sections of the first to third light-emitting semiconductor sections LED1, LED2, and LED3. Therefore, the light components emitted by the first to third light-emitting semiconductor sections LED1, LED2, and LED3 are not subject to optical interference and can be emitted by the first to third wavelength converters 190R, 190G, and 190B, which are located in the upper sections of the first to third light-emitting semiconductor sections LED1, LED2, and LED3. The second shaped section 162 can be made of a material containing a black matrix.A reflective layer 182, made of a metallic material such as tungsten (W) and tungsten silicide (WS), can be arranged on an upper surface of the second shaped section 162.

[0034] A wavelength conversion material, such as a quantum dot (QD), can be filled into the partition structure of the molded section 160 while dispersed in a liquid binder resin and then cured to form the first to third wavelength converters 190R, 190G, and 190B. In one embodiment, the first and second wavelength converters 190R and 190G contain a quantum dot for wavelength conversion from blue light to red and green light, respectively, and the third wavelength converter 190B contains only a binder resin without the quantum dot.

[0035] A liquid photosensitive resin composition is described in detail, in which a red quantum dot and a green quantum dot are dispersed in a binding resin, filled into the partition structure, and then cured to form the first and second wavelength transducers 190R and 190G. The binding resin can be made of a material containing an acrylic-based polymer.

[0036] The protective layer 400 can be arranged on an upper section of the first to third wavelength transducers 190R, 190G and 190B, which prevents deterioration of the first to third wavelength transducers 190R, 190G and 190B.

[0037] A bonding layer 200, intended for bonding to the second substrate structure 300, can be arranged on a lower section of the first substrate structure 100. The bonding layer 200 can include an insulating bonding layer 210 and a conductive bonding layer 220, and the insulating bonding layer 210 enables the bonding of the first substrate structure 100 to the second substrate structure 300. The insulating bonding layer 210 can be formed from a material with a composition identical to that of the shaped section 160 of the first substrate structure 100. The conductive bonding layer 220 is provided to enable the first and second electrode pads 175N and 175P of the first substrate structure 100 to be bonded to electrodes of the second substrate structure 300, and can be formed from a conductive material with a composition that is the same as that of the first and second electrode pads 175N and 175P.Thus, the first substrate structure 100 and the second substrate structure 300 can be bonded and integrated together by the bonding layer 200.

[0038] The second substrate structure 300 can include a driver circuit containing a plurality of thin-film transistor (TFT) cells for controlling the light-emitting device package LP1 of the first substrate structure 100. The plurality of TFT cells can form a TFT circuit for controlling the drive of the plurality of pixels P. The plurality of TFT cells can be connected by the conductive bonding layer 220 of the bonding layer 200 to correspond to the first to third light-emitting semiconductor sections LED1, LED2, and LED3, respectively. The plurality of TFT cells can contain a semiconductor layer formed by injecting impurities into a semiconductor substrate. For example, a semiconductor layer contained in the plurality of TFT cells can be a polysilicon-silicon-based semiconductor, a semiconductor oxide such as indium gallium zinc oxide, or a compound semiconductor such as silicon-germanium.

[0039] The display field 1 according to one embodiment has an excellent aperture ratio compared to the case in which a partition structure using a silicon substrate is employed. This is demonstrated with reference to Fig. 4A and Fig. 4B described. Fig. Figure 4B shows a comparative example using a partition structure 2180 formed from a silicon substrate.

[0040] In Fig. 4B corresponds to elements designated with reference numerals 2400, 2131, 2132, 2133, 2141, 2175P, 2170NC, 2161, 2175N, 2210, 2220 and 2300, and to the respective elements designated with reference numerals 400, 131, 132, 133, 141, 175P, 170NC, 161, 175N, 210, 2220 and 300 in Fig. 4A are marked, and repeated descriptions are omitted.

[0041] Referring to Fig. 4B, in the case of a comparative example, the ratio between the height L of the partition structure 2180 and the width W5 of the light-emitting window LW increases when the pixel density of a pixel is increased. Thus, the aperture ratio can be reduced. Even if the pixel density is increased and thus a pixel is miniaturized, the thickness W4 of the partition structure 2180 cannot be reduced to be equal to or less than a predetermined value, because the structural stiffness of the partition structure 2180 must be maintained. That is, if the pixel density is increased and thus the size of the pixel P is reduced, a light-emitting window LW formed in the partition structure 2180 has a vertically long and narrow shape, and accordingly, the shape of the wavelength transducer 2190 is also formed in such a way that it is long and narrow.Thus, luminosity can be further reduced while light L3 emitted through the active layer 2132 travels along a long light-emitting path.

[0042] Furthermore, if the width L5 of the light-emitting window LW is reduced, the ratio of the overlapping area A1 between the partition structure 2180 and the light-emitting structure 2130 increases due to manufacturing tolerances. In this overlapping area A1, light is absorbed by the partition structure 2180 or reflected downwards and therefore cannot be emitted through the light-emitting window LW. Thus, increasing the ratio of the overlapping area A1 between the partition structure 2180 and the light-emitting structure 2130 can reduce the overall luminance of the display field.

[0043] In one embodiment, a partition structure using a silicon substrate is replaced by a shaped section containing a material with high reflectivity, thus enabling the formation of a wavelength converter with a substantially reduced thickness compared to a silicon partition structure. Therefore, one embodiment of the disclosure can solve the prior art problem of reduced luminosity in a process where the light passes through a narrow and long wavelength converter.

[0044] Furthermore, in one embodiment, the area of ​​a wavelength converter can be wider compared to that of the light-emitting structure 2130, since a partition structure can be thin. Thus, one embodiment of the disclosure can solve the problem of light emitted by the active layer being blocked by a partition structure.

[0045] Fig. Figure 5 is a cross-sectional view of a display field 2 with a light-emitting device package LP2 according to an embodiment of the disclosure.

[0046] Compared to display field 1 according to the previously described embodiment, display field 2 differs from Fig. 5 in that the first formed section 1161 is made of PI, and since PI has a relatively low reflectivity compared to PCT or EMC, a reflective layer 1200 is formed on a side surface of a first light-emitting semiconductor section LED4, a second light-emitting semiconductor section LED5, and a third light-emitting semiconductor section LED6, with respect to its properties. Additionally, an insulating layer 1100 is arranged between the reflective layer 1200 and the first to third light-emitting semiconductor sections LED4, LED5, and LED6, thereby isolating the reflective layer 1200 from the first to third light-emitting semiconductor sections LED4, LED5, and LED6. Otherwise, the embodiment is as follows: Fig. 5 is similar to the embodiment described above, and therefore redundant descriptions are omitted.

[0047] The following describes a process for manufacturing a display field according to an exemplary embodiment. Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15 to Fig. 16 are schematic views that illustrate a main process of manufacturing the display panel from Fig. 3.

[0048] Firstly, referring to Fig. 6. A buffer layer 120 is formed on a substrate for growth 110, and an upper first conductivity-type semiconductor layer 131A is formed on the buffer layer 120. An electrode pattern for information of a common first electrode 170N can be formed on an upper surface of the upper first conductivity-type semiconductor layer 131A, as shown in Fig. As shown in Figure 7, a pad section 170NC of the common first electrode 170N can be located in a corner of the upper first conductivity-type semiconductor layer 131A, and a single electrode section 170NA can be located in any region where a plurality of light-emitting structures are to be formed in a subsequent process. Additionally, the pad section 170NC and the single electrode section 170NA are connected by the interconnect section 170NB, allowing the pad section 170NC and the single electrode section 170NA to be electrically connected. The common first electrode 170N can contain tungsten (W) and tungsten silicide (WS) with a melting point high enough to withstand high-temperature semiconductor heat treatment processes.

[0049] Referring to Fig. 8. A lower first conductivity-type semiconductor layer 131B can be formed on the upper first conductivity-type semiconductor layer 131A to cover the common first electrode 170N. The upper first conductivity-type semiconductor layer 131A and the lower first conductivity-type semiconductor layer 131B are designed as a single semiconductor layer formed from the same composition and can thus be integrated as the first conductivity-type semiconductor layer 131. The common first electrode 170N can then be embedded in the first conductivity-type semiconductor layer 131. Subsequently, the active layer 132 and the second conductivity-type semiconductor layer 133 can be formed on the first conductivity-type semiconductor layer 131.

[0050] Referring to Fig. 9. A second electrode 141 can be formed on the second conductivity-type semiconductor layer 133, while a hard mask layer 142 is formed on the second electrode 141. The hard mask layer 142 can prevent the second electrode 141 from being damaged in a subsequent process.

[0051] Referring to Fig. 10. A common first electrode 170N is used as an etching mask, and etching can be carried out until the common first electrode 170N is exposed. As a result, some regions E of the light-emitting structure 130 are etched such that they form a mesa region M. Referring to Fig. 11 The insulating layer 150 can be formed on a side surface of the light-emitting structure 130.

[0052] Referring to Fig. 12. A first formed section 161 is created to cover the light-emitting structure 130, and a second formed section 162 is created on top of the first formed section 161. Referring to Fig. 13 an area of ​​the second shaped section 162 is etched and a conductive material is plated to form a first electrode pad 175N and a second electrode pad 175P which contact the common first electrode 170N and the second electrode 141.

[0053] Referring to Fig. 14 can form a second substrate structure 300 on a lower section of the second shaped section 162 Fig. 13 is attached, while a bond layer 200, which contains the insulating bond layer 210 and the conductive bond layer 220, is inserted between the second substrate structure 300 and the second shaped section 162. Fig. 14 can be understood to mean that the first electrode pad is 175N and the second electrode pad is 175P made of Fig. 13 are inverted to be arranged on a lower section. The second substrate structure 300 can contain a driver circuit, which includes the majority of TFT cells for controlling the first to third light-emitting semiconductor sections LED1, LED2, and LED3. The majority of TFT cells can contain a semiconductor layer formed by injecting impurities into a semiconductor substrate. For example, a semiconductor layer forming the majority of TFT cells can contain a polysilicon- and silicon-based semiconductor, a semiconductor oxide such as indium gallium zinc oxide, or a compound semiconductor such as silicon-germanium. The semiconductor substrate can be at a concentration of 10 or less than 10 16 cm -3, a concentration which is lower than a doping concentration on the substrate for growth 110, are doped with boron to ensure etch selectivity in a subsequent process for separating the substrate for growth 110.

[0054] Referring to Fig. 15. A substrate for growth is separated and wet-etched from the first to third light-emitting section LED1, LED2 and LED3, and an isolation (ISO) process can be carried out to separate the first to third light-emitting semiconductor section LED1, LED2 and LED3 from each other.

[0055] Referring to Fig. In step 16, a black matrix is ​​applied to an upper section of the light-emitting structure 130 to form the second shaped section 162, and a reflective layer 182 is deposited on it. Then, an area is etched to form groove sections 183A, 183B, and 183C to form the wavelength converter 190 in a subsequent process. Following this, a wavelength conversion material, such as a quantum dot (QD), is filled into the groove sections while dispersed in a liquid binder resin to form the first to third wavelength converters 190R, 190G, and 190B, and a protective layer 400 is attached to an upper section to form the display field 1. Fig. 3 to produce.

[0056] A process for manufacturing a display field according to an exemplary embodiment is described. Fig. 17, Fig. 18, Fig. 19 to Fig. 20 are schematic views that illustrate a main process of manufacturing the display panel from Fig. 5 represent. The one in Fig. The process described in point 17 takes the same or similar processes as the one described previously with reference to Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10 to Fig. This embodiment is based on the embodiment described in section 11 and focuses on subsequent processes. Therefore, repeated descriptions of the process are omitted. Additionally, when compared to the previously described embodiment, this embodiment differs from... Fig. 17-20 in that the first formed section 1161 is made of polyimide (PI).

[0057] Referring to Fig. 17. The reflective layer 1200 can be formed on a side surface of a light-emitting structure 1130. The reflective layer 1200 is formed by depositing aluminum (Al) on a side surface of the light-emitting structure 1130. The reflective layer 1200 is intended to compensate for the low reflectivity, compared to PCT or EMC, of ​​the first formed section 161, which is to be formed from PI, in a subsequent process. An insulating layer 1100 can be inserted between the reflective layer 1200 and the light-emitting structure 1130 to insulate them.

[0058] Referring to Fig. 18. The first formed section 1161 can be formed in the light-emitting structure 1130. The first formed section 1161 can be made of polyimide (PI). An opening H1 is formed in the first formed section 1161, thereby exposing the common first electrode 1170N and the second electrode 1141.

[0059] Referring to Fig. 19. A second formed section 1162 is formed on the first formed section 1161, and openings H2 and H3 are formed, thereby exposing the second electrode 1141. A second formed section 1162 can be formed by coating it with a material consisting of at least one of PI and polyphenylenebenzobisoxazole (PBO).

[0060] Referring to Fig. 20 A conductive material is arranged in both opening H2 and opening H3 to form a first electrode pad 1175N and a second electrode pad 1175P, which touch the common first electrode 1170N and the second electrode 1141.

[0061] Then, the previously described subsequent operations are performed to clear display field 2. Fig. 5 to produce.

[0062] As outlined above, according to exemplary embodiments of the inventive concept, in a method for manufacturing a light-emitting device package and a display field, the time spent in manufacturing can be reduced and miniaturization can be easily achieved by using the same.

[0063] Furthermore, a method for manufacturing a flexible display field may be provided.

Claims

[1] Light-emitting device package comprising: a plurality of light-emitting structures (130) spaced apart from one another, each of the plurality of light-emitting structures comprising a first conductivity-type semiconductor layer (131), an active layer (132), a second conductivity-type semiconductor layer (133), a first surface provided by the first conductivity-type semiconductor layer (131), and a second surface provided by the second conductivity-type semiconductor layer (133), wherein the first surface is opposite the second surface; a common first electrode (170N) extending parallel to the first and second surfaces of the plurality of light-emitting structures (130) on a plane distinct from the planes of the first and second surfaces, wherein the common first electrode (170N) connects respective first conductivity-type semiconductor layers (131) of the plurality of light-emitting structures (130) and comprises at least one of tungsten and tungsten silicide; a plurality of second electrodes (141) arranged on the second surfaces of the plurality of light-emitting structures (130) and connected to respective second conductivity-type semiconductor layers (133) of the plurality of light-emitting structures (130); a plurality of wavelength converters (190R, 190G, 190B) arranged on the first surfaces and spaced apart from each other to correspond to the plurality of light-emitting structures (130); and a shaped section (160) covering side surfaces of the plurality of light-emitting structures (130) and side surfaces of the plurality of wavelength transducers (190R, 190G, 190B), wherein the shaped section (160) has a partition structure separating the plurality of wavelength transducers (190R, 190G, 190B) from one another, and having a material having an elastic modulus lower than that of the plurality of light-emitting structures (130), wherein the common first electrode (170N) is aligned on a surface arranged parallel between the first surfaces and the second surfaces, characterized by that the common first electrode (170N) exhibits: a plurality of individual electrode sections (170NA) arranged in an area overlapping the plurality of light-emitting structures and connected to the respective first conductivity-type semiconductor layers (131); at least one pad section (170NC) arranged in an area that does not overlap the majority of light-emitting structures (130); and a connecting section (170NB) that connects the majority of individual electrode sections (170NA) together and connects at least one of the majority of individual electrode sections (170NA) to the at least one pad section (170NC), wherein each of the plurality of individual electrode sections (170NA) is arranged to surround a perimeter of an area of ​​a corresponding light-emitting structure (130). [2] Light-emitting device package according to claim 1, further comprising: a first electrode pad (175N) that passes through the shaped section (160) and is connected to at least one pad section (170NB); and a second electrode pad (175P) that passes through the shaped section (160) and is connected to each of the plurality of second electrodes (141). [3] Light-emitting device package according to claim 1, wherein, when viewed from the first surface, the plurality of light-emitting structures (130) are arranged in an area that overlaps the plurality of wavelength converters (190R, 190G, 190B). [4] Light-emitting device package according to claim 3, wherein, when viewed from the first surface, an area of ​​each of the plurality of light-emitting structures (130) is smaller than an area of ​​each of the plurality of wavelength converters (190R, 190G, 190B). [5] Light-emitting device package according to claim 1, wherein the plurality of light-emitting structures (130) have respective stepped side surfaces, and an area of ​​the first surface is larger than an area of ​​the second surface. [6] Light-emitting device package according to claim 1, wherein the shaped section (160) comprises: a first shaped section (161) that covers the side surfaces of the majority of light-emitting structures (130); a second shaped section (162) that isolates the majority of wavelength converters (190R, 190G, 190B) from each other; and a third shaped section (163) that covers the first shaped section (161). [7] Light-emitting device package according to claim 6, wherein the first formed section (161) comprises at least one of polycyclohexylenedimethylene terephthalate and an epoxy resin molding compound, and the third formed section (163) comprises at least one of polyimide and polyphenylenebenzobisoxazole. [8] Light-emitting device package according to claim 6, wherein the first formed section (161) comprises polyimide and the second formed section (162) comprises polyphenylenebenzobisoxazole, and a reflective layer (182) is arranged between the first formed section (161) and the plurality of light-emitting structures (130). [9] Display field (1), having: a first substrate structure (100) comprising a plurality of light-emitting device packages according to any one of claims 1 to 8, arranged in rows and columns, each of the plurality of light-emitting device packages comprising at least one pixel (P) with a plurality of subpixels (SP1, SP2, SP3); and a second substrate structure (300) comprising a plurality of thin-film transistor cells, each corresponding to a plurality of light-emitting device packages, and aligned on a lower section of the first substrate structure (100). [10] Display field according to claim 9, wherein the pixel (P) has a density of 8000 pixels per inch or more. [11] Display field according to claim 9, wherein the plurality of light-emitting structures (130) is configured to emit light of substantially the same wavelength.

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