Semiconductor module

Abstract

Semiconductor module, comprising: - an isolated circuit board (1); - a semiconductor device (4) mounted on the insulated circuit board (1); - a printed circuit board (5) arranged above the insulated circuit board (1) and the semiconductor device (4) and having a through hole (6c); - a metal post (10) having a lower end bonded to an upper surface of the semiconductor device (3, 4) and a cylindrical section (10b) passing through the through hole (6c) and bonded to an upper surface of the printed circuit board (5) by means of a bonding material (12); - a housing (13) that surrounds the insulated circuit board (1), the semiconductor device (4), the printed circuit board (5) and the metal post (10); and - a sealing material (14) that seals an interior of the housing (13), wherein in the through-hole (6c) there is a gap between an outer circumference of the cylindrical sub-area (10b) and an area of ​​the printed circuit board (5) which defines the through-hole (6c) in a lateral direction.

Description

Background of the invention: Area

[0001] The present disclosure relates to a semiconductor module with a printed circuit board integrated into the module. background

[0002] In a general power module, a semiconductor device and a circuit structure are connected by a metal wire or the like to form a circuit. A technique for implementing a connection to a semiconductor device using a printed circuit board has been proposed for higher module density and reliability. Traditionally, a semiconductor device is mounted on an insulated circuit board, and a flat copper wire, bonded to a top surface of the semiconductor device, penetrates a through-hole in the printed circuit board and is bonded to it (see, for example, Fig. 4 of JP 2016- 029 688 A). Summary

[0003] Traditionally, a semiconductor device inside a sealed module and a printed circuit board (PCB) outside the module were connected in such a way that precise gap control between the semiconductor device and the PCB was not required. However, when a PCB is integrated inside a module, the gap between the semiconductor device and the PCB must be filled with a sealing material, thus requiring precise gap control between the semiconductor device and the PCB.

[0004] An insulated circuit board can warp due to thermal stress. Warping can occur particularly when semiconductor devices of varying thicknesses are mounted on an insulated circuit board. This warping is a three-dimensional curvature in all directions, including not only the Z-direction (vertical direction) but also the X- and Y-directions (lateral directions). However, a flat copper wire is a parallel, flat plate, so it exhibits high stiffness in the X- and Y-directions and is hardly deformed. Therefore, flat copper wires were able to follow the warping in the vertical direction but had difficulty following the warping in the X- and Y-directions.

[0005] In the prior art, flat copper wires are bent, resulting in residual stress due to bending or other stresses. This makes it difficult to achieve a uniform height and to control the gap between a semiconductor device and a printed circuit board. Increasing the interval between the bent copper wires makes it easier to achieve a uniform height, but the increased height prevents the wires from being housed within a single enclosure. Therefore, the bent copper wires are arranged adjacent to each other with opposite current flow directions, thus reducing self-inductance. However, increasing the interval between the folded copper wires further reduces this effect.

[0006] As described above, when connecting a semiconductor device and a printed circuit board (PCB) using conventional flat copper wire, it was difficult to control the gap between the semiconductor device and the PCB. Consequently, when a PCB was integrated into a module, the filling success of the sealing material was reduced, degrading insulation performance and structural reliability.

[0007] US Patent 2016 / 0322287A1 discloses a semiconductor device in which an implant plate and a semiconductor element on a semiconductor mounting plate are connected and electrically wired via implant pins, and which can be manufactured with high productivity. The implant pins are connected to a semiconductor element and / or a circuit pattern on a semiconductor mounting plate via cylindrical terminals pressed into the other ends of the implant pins. The insertion depth of each implant pin into the corresponding cylindrical terminals is adjustable so that the overall length of the implant pin and the cylindrical terminal pressed into each other corresponds to the distance between the semiconductor element and / or the circuit pattern on the semiconductor mounting plate and an implant plate.

[0008] DE 11 2015 000 513 T5 relates to an electrode connection, a semiconductor device for electrical energy, and a method for manufacturing a semiconductor device for electrical energy. The known electrode connection has a first drawn-out section that is to be bonded to a main electrode, and a second drawn-out section that is formed from a plate element in a continuous manner from an end region, which is to be positioned opposite the main electrode with a gap between them, to another end region, which is to be connected to an external circuit, such that a region in the first drawn-out section, which is adjacent to a region to be bonded to the main electrode, is bonded to a surface opposite the main electrode.The first drawn-out section is designed such that the area to be bonded to the main electrode is located away from the opposite surface. An opening corresponding to the main electrode is formed in the second drawn-out section.

[0009] The present disclosure or invention was made to solve the problem described above and has the objective of obtaining a semiconductor module capable of improving insulation performance and structural reliability.

[0010] The problem underlying the invention is solved according to the invention in a semiconductor module by the features of claim 1, alternatively by the features of claim 3, and further alternatively by the features of claim 8. Advantageous embodiments are the subject of the respective dependent claims.

[0011] A semiconductor module according to the present disclosure comprises: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed circuit board arranged above the insulated circuit board and the semiconductor device, and having a through-hole; a metal post having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion extending through the through-hole and bonded to the printed circuit board; a housing enclosing the insulated circuit board, the semiconductor device, the printed circuit board, and the metal post; and a sealing material sealing an interior of the housing.

[0012] In the present disclosure, the cylindrical portion of the metal post penetrates the through-hole and is bonded to the printed circuit board. The cylindrical portion moves relative to the through-hole, allowing the metal post and the printed circuit board to follow the curvature of the insulated circuit board in the vertical direction. Furthermore, the cylindrical portion is slightly deformed in the lateral direction. Therefore, the metal post and the printed circuit board can follow omnidirectional three-dimensional curvatures of the insulated circuit board. Accordingly, the gap between the insulated circuit board and the printed circuit board can be controlled. As a result, the filling success of the sealing material is improved, thus enhancing the insulation performance and structural reliability.

[0013] Other and further tasks, features and benefits of the revelation will become more fully apparent from the following detailed description. Brief description of the drawings Fig. Figure 1 is a cross-sectional view showing a semiconductor module according to a first embodiment. Fig. Figure 2 is a top view of the metal post. Fig. Figure 3 is a top view of the semiconductor device. Fig. Figure 4 is a cross-sectional view showing a semiconductor device according to a second embodiment. Fig. Figure 5 is a cross-sectional view showing a semiconductor device according to a third embodiment. Fig. Figure 6 is a cross-sectional view showing a semiconductor module according to a fourth embodiment. Fig. Figure 7 is a cross-sectional view showing a semiconductor module according to a fifth embodiment. Description of embodiments

[0014] A semiconductor module according to the embodiments of the present disclosure is described with reference to the drawings. The same components are designated by the same symbols, and their repeated description can be omitted. First embodiment

[0015] Fig. Figure 1 is a cross-sectional view showing a semiconductor module according to a first embodiment. A circuit structure 2 is formed on a surface of an insulated circuit board 1, which is insulated with resin. Semiconductor devices 3 and 4 are mounted on the insulated circuit board 1. For example, semiconductor device 3 is an insulated-gate bipolar transistor (IGBT). Semiconductor device 4 is a freewheeling diode (FWDi). The thickness of semiconductor device 3 is 0.1 mm, the thickness of semiconductor device 4 is 0.3 mm, and the two semiconductor devices have different thicknesses. Note that electronic components other than semiconductor devices 3 and 4 may be mounted on the insulated circuit board 1.

[0016] A printed circuit board 5 is arranged above the insulated circuit board 1 and the semiconductor devices 3 and 4. The printed circuit board 5 has through-holes 6a, 6b, and 6c and a circuit structure 7 consisting of one or more layers. The semiconductor devices 3 and 4 are bonded to the circuit structure 2 of the insulated circuit board 1 by means of a die-bonding material 8. Metal posts 9 and 10 of different shapes are bonded to the upper surfaces of the semiconductor devices 3 and 4, respectively, by means of a bonding material 11.

[0017] The metal post 9 has a base section 9a with a large cross-sectional area and cylindrical subsections 9b and 9c, which are two subsections branching off from the base section 9a. The two cylindrical subsections 9b and 9c penetrate through the two through-holes 6a and 6b, respectively, and are bonded to the circuit structure 7 of the printed circuit board 5. Fig. Figure 2 is a top view of the metal post 10. The metal post 10 has a base section 10a bonded to the semiconductor device 4 and a cylindrical section 10b that extends through the through hole 6c and is bonded to the circuit structure 7 with a bonding material 12.

[0018] In the assembly process of the semiconductor module, the metal posts 9 and 10 are first bonded to the upper surfaces of the semiconductor devices 3 and 4, respectively, using bonding material 11. Next, the metal posts 9 and 10 are extended through the through-holes 6a, 6b, and 6c of the printed circuit board 5 and bonded to the circuit structure 7 using bonding material 12. At this point, the bonding materials 11 and 12 melt simultaneously. Warping or bulging occurs due to a difference in the coefficient of thermal expansion between the insulated circuit board 1 and the semiconductor devices 3 and 4 within the insulated circuit board 1. The metal posts 9, 10, which were glued to the bonding material 11 melted on the upper surfaces of the semiconductor devices 3 and 4 by means of surface tension, follow the curvature of the insulated circuit board 1.

[0019] A housing 13 surrounds the insulated circuit board 1, the semiconductor devices 3 and 4, the printed circuit board 5, and the metal posts 9 and 10. To protect the insulated circuit board 1, the semiconductor devices 3 and 4, and the printed circuit board 5, the interior of the housing 13 is sealed with a sealing material 14. The sealing material 14 is an insulating sealant such as a hard epoxy resin. The viscosity of the hard epoxy resin is approximately 20 to 50 Pa·s, which is about 10 to 100 times greater than the viscosity of 0.5 to 2 Pa·s of a silicone gel, a common sealant. It is necessary that the sealing material 14 be filled, as described above, into the areas above the semiconductor devices 3 and 4, which are the narrowest sections between the insulated circuit board 1 and the printed circuit board 5.Therefore, considering the difficulty in flowing and the high viscosity of the sealing material 14, a gap of at least 200 µm or more is required. Note that the required gap size is related to the withstanding stresses of the semiconductor devices 3 and 4.

[0020] For example, if the material of the circuit structure 2 of the insulated circuit board 1 is Cu, the coefficient of thermal expansion is 17. If the material of the semiconductor devices 3 and 4 is SiC, the coefficient of thermal expansion is 7. This difference in the coefficient of thermal expansion causes warping or deformation in the insulated circuit board 1 at temperatures where the bonding material 11 melts and hardens. As a result, the gaps between the semiconductor devices 3 and 4 and the printed circuit board 5 become uneven.

[0021] On the other hand, in the present embodiment, the cylindrical sections 9b, 9c, 10b of the metal posts 9 and 10 penetrate the through-holes 6a, 6b, and 6c of the printed circuit board 5 and are bonded to the circuit structure 7. The cylindrical sections 9b, 9c, and 10b move relative to the through-holes 6a, 6b, and 6c while the bonding material 12 is melted, allowing the metal posts 9 and 10 and the printed circuit board 5 to follow the curvature of the insulated circuit board 1 in the vertical direction. Furthermore, the cylindrical sections 9b, 9c, and 10b are slightly deformed in the lateral direction. Therefore, the metal posts 9 and 10 and the printed circuit board 5 can follow omnidirectional three-dimensional curvatures of the insulated circuit board 1.Accordingly, the gap between the insulated circuit board 1 and the printed circuit board 5 can be controlled, and a uniform gap of approximately 200 µm to 2 mm can be stably maintained as planned. As a result, the filling success of the sealing material 14 is improved, and the sealing material 14 is sufficiently filled into the gap without incomplete filling of the sealing material 14 due to bubbles or the like, thus improving the insulation performance and structural reliability.

[0022] In the prior art, a wiring connection is fixed with a sealing material while deformed due to the curvature of a circuit board and is connected to a printed circuit board outside a module. Therefore, it was necessary to increase the diameters of the through-holes of the printed circuit board. In contrast, in the present embodiment, the printed circuit board 5 is integrated into the module in such a way that sealing is carried out after the printed circuit board 5 and the metal posts 9 and 10 are bonded together. Furthermore, the metal posts 9 and 10 and the printed circuit board 5 can follow the curvature of the insulated circuit board 1 as described above, so that the diameters of the through-holes 6a, 6b, and 6c of the printed circuit board 5 do not need to be as large.

[0023] When a large number of semiconductor devices 3 and 4 of varying thicknesses are mounted on the insulated circuit board 1, the board may warp. Therefore, it is particularly important to follow this warping. Furthermore, a conventional wiring connection, obtained by bending a flat copper wire, has a long wiring length and high electrical resistance. On the other hand, the metal posts 9 and 10 are suitable for a semiconductor module carrying high currents, as they shorten the wiring length and reduce the electrical resistance.

[0024] When a current of several tens to several hundred amperes is passed through the through-holes of the printed circuit board 5 in a power semiconductor, the metal post 9 with a forked structure is effective. The cross-sectional shape of the metal post 10 is an inverted T-shape. The width of the cylindrical section 10b on the upper side of the metal post 10 is smaller than the width of the through-hole 6c, thus ensuring a gap between them. This gap defines an area for tracing the curvature of the insulated circuit board 1. On the other hand, the width of the base section 10a on the lower side of the metal post 10 is larger than the width of the through-hole 6c.Since the base section 10a serves as a stop device to prevent the printed circuit board 5 from falling, a gap can be ensured between the insulated circuit board 1 and the printed circuit board 5. Furthermore, since the bonding area between the metal post 10 and the semiconductor device 4 is enlarged, heat dissipation from the semiconductor device 4 is increased.

[0025] It is preferable that the melting point of the bonding material 11 be set to be higher than that of the bonding material 12. Thus, after the temperature is increased in a heating oven or the like to melt the two materials, the bonding material 11 will solidify earlier when the temperature decreases and the bonding material 12 is still molten. Accordingly, the metal posts 9 and 10 can move freely in the through-holes 6a, 6b, and 6c of the printed circuit board 5, so that the metal posts 9 and 10 and the printed circuit board 5 can follow the curvature in the vertical direction of the insulated circuit board 1. Moreover, since no load is applied to the previously solidified bonding material 11, it is possible to avoid bond failure of the bonding material 11.Since the bonding material 11 for bonding the semiconductor devices 3 and 4 and the metal posts 9 and 10 is solidified earlier, it is also possible to prevent a positional displacement of the metal posts 9 and 10 with respect to the semiconductor devices 3 and 4.

[0026] If the size of a signal electrode, such as a gate electrode, on the upper surface of the semiconductor device 3 is increased, the area of ​​a power electrode, such as an emitter electrode, decreases accordingly, which impairs its performance as a power semiconductor device. Therefore, high positional accuracy is required for bonding the metal post to a signal electrode, since the area of ​​the signal electrode cannot be increased. The present embodiment is also effective for bonding the metal post to the signal electrode as described above. Second embodiment

[0027] Fig. Figure 3 is a top view of the semiconductor device. The semiconductor device 3 is a large-sized IGBT chip designed to generate a high current flow. A gate electrode 15, which is a signal electrode through which a control signal flows, is located on the top surface of the semiconductor device 3. Emitter electrodes 16a and 16b, which are power electrodes through which a high current flows, are located separately on the top surface of the semiconductor device 3. A dividing line 17 is formed between the emitter electrodes 16a and 16b. The dividing line 17 is set to a potential different from that of an excitation region, and thus, if the dividing line 17 and the excitation region were to come into contact, the semiconductor device 3 would not function.

[0028] Fig. Figure 4 is a cross-sectional view showing a semiconductor device according to a second embodiment. The downward-extending cylindrical sections 9b and 9c of the metal post 9 are inserted into the through-holes 6a and 6b, respectively, with the base section 9a of the metal post 9 facing upwards. The tips of the cylindrical sections 9b and 9c are bonded to the emitter electrodes 16a and 16b, respectively, without touching the dividing line 17 of the semiconductor device 3. As a result, the bonding area between the metal post 9 and the semiconductor device 3 can be increased, which is advantageous for bonding to the semiconductor device 3, which can be adapted to a high current. The remaining configurations and effects are similar to those of the first embodiment.

[0029] Note that, unlike the first embodiment, the cross-sectional shape of the metal post 10 is T-shaped and therefore lacks a stop mechanism to prevent the printed circuit board 5 from falling. Consequently, the printed circuit board 5 can be fixed to and supported by the housing 13 to ensure a gap between the insulated circuit board 1 and the printed circuit board 5. Alternatively, the gap can be maintained using the metal post 10 with the inverted T-shape of the first embodiment. Third embodiment

[0030] Fig. Figure 5 is a cross-sectional view showing a semiconductor device according to a third embodiment. In the present embodiment, metal wires 18 are used instead of the metal posts 9 and 10. Each of the metal wires 18 is connected at both ends to the circuit structure 7 on the lower surface of the printed circuit board 5 and hangs down. The metal wires 18, which can be pre-positioned to have a required height, are bonded to the printed circuit board 5. The hanging portions of the metal wires 18 are bonded to the upper surfaces of the semiconductor devices 3 and 4 by a bonding material 19. The metal wires 18 are made of a material that can be bonded to the bonding material 19 and are, for example, copper wires.

[0031] In the present embodiment, the gap between the printed circuit board 5 and the insulated circuit board 1 can be adjusted as desired by controlling the height of the metal wires 18. This increases the filling efficiency of the sealing material 14 and improves insulation performance and structural reliability. Controlling the height of the metal wire 18 is simpler than with a leaf spring structure. Therefore, even with numerous bonded sections, the height can be individually controlled.

[0032] Note that when a plurality of metal wires 18 are used, the printed circuit board 5 can be supported by the metal wires 18 alone, but the printed circuit board 5 can also be fixed to and supported by the housing 13. Furthermore, a plurality of metal wires 18 can be bonded to a power electrode through which a large current flows, whereas a single metal wire 18 can be bonded to a signal electrode through which a small current flows. Consequently, the configuration of the present embodiment can also be used for connecting a signal electrode, which generally has a small area. The diameter of the copper wire is in a range between 200 µm and 500 µm, but is selected along with the number of wires, which is determined by the rated currents of the semiconductor devices 3 and 4.As described above, since the diameter of the metal wire 18 is large and a certain degree of stiffness can be maintained, there is no effect of the filling of the sealing material 14, for example a deformation of the metal wire 18. Fourth embodiment

[0033] Fig. Figure 6 is a cross-sectional view showing a semiconductor module according to a fourth embodiment. In the present embodiment, press-fit devices 20 are used instead of the metal posts 9 and 10. The press-fit device 20 is also called a tulip press, and its lower ends are bonded to the upper surfaces of the semiconductor devices 3 and 4 by the bonding material 11. The press-fit portions of the press-fit devices 20 are directly fitted or pressed into the through holes 6a, 6b, and 6c. Before being pressed in, the press-fit devices 20 have a greater width than the diameters of the through holes 6a, 6b, and 6c. The contacts between the press-fit devices 20 and the through holes 6a, 6b and 6c are maintained under pressure caused by elastic deformation of the pressed-in press-fit devices 20.

[0034] By using the press-fit devices 20, it is possible to make an electrical connection to the printed circuit board 5 without using the bonding material 12. Therefore, the connection can be made at normal temperature, and it is unnecessary to raise the temperature during assembly to melt the bonding material 12. This simplifies assembly and improves productivity. Since the press-fit devices 20 are easy to attach and detach, they are also effective when it is necessary to replace the printed circuit board 5. The remaining configurations and effects are similar to those of the first embodiment. Fifth embodiment

[0035] Fig.Figure 7 is a cross-sectional view showing a semiconductor module according to a fifth embodiment. The present embodiment includes the metal posts 9 and 10 with the cylindrical sub-areas 9b, 9c and 10b of the first or second embodiment, the metal wires 18 of the third embodiment and the press-fit devices 20 of the fourth embodiment.

[0036] As the application range of power semiconductor devices expands, a future scenario will arise where multiple circuits and semiconductor devices, such as a SiC device or SiC devices best suited to the circuits, are mixed and assembled within a single power semiconductor device. In such a case, by combining configurations from the first through fourth embodiments and selectively using one combination, an internal circuit can be configured in an optimal space, resulting in a highly integrated power semiconductor device.

[0037] The insulated circuit board 1 is an insulated circuit board made of resin. However, the insulated circuit board 1 is not limited to the above type and can be an insulated circuit board made of a ceramic substrate or a structured conductor frame. The semiconductor devices 3 and 4 are not limited to IGBTs but can be metal-oxide-semiconductor field-effect transistors (MOSFETs).

[0038] Sealing material 14 is not limited to hard epoxy resin but can be a silicone-based sealant capable of achieving similar effects. Die bonding material 8 and bonding materials 11, 12, and 19 are generally solder metals. However, these materials are not limited to the type described above and can be bonding materials containing sinterable silver or copper particles. By using a sinterable bonding material, the lifetime of the bonded areas can be improved compared to solder metal bonding. When semiconductor devices 3 and 4, which are formed from wide-bandgap semiconductors capable of operating at high temperatures, are used to take advantage of these characteristics, improving the lifetime of the bonded areas by using a sintered material is effective.

[0039] Semiconductor devices 3 and 4 are not limited to silicon-based devices but can instead be formed from a wide-bandgap semiconductor with a wider bandgap than that of silicon. Examples of such wide-bandgap semiconductors include silicon carbide, gallium nitride-based materials, and diamond. A semiconductor device formed from such a wide-bandgap semiconductor exhibits high voltage withstand capability and high allowable current density, and can therefore be miniaturized. The use of such a miniaturized semiconductor device enables the miniaturization and high integration of the semiconductor module in which the semiconductor device is integrated.Since the semiconductor device exhibits high thermal resistance, a heat sink's radiating fin can be miniaturized, and a water-cooled component can be air-cooled, leading to further miniaturization of the semiconductor module. Because the semiconductor device has low power loss and high efficiency, a highly efficient semiconductor module can be achieved. The two semiconductor devices 3 and 4 are preferably formed from a wide-bandgap semiconductor. However, only one of the semiconductor devices 3 and 4 can be made from a wide-bandgap semiconductor. Even in this case, the advantageous effects described in this embodiment can be obtained.

Claims

[1] Semiconductor module comprising: - an isolated circuit board (1); - a semiconductor device (4) mounted on the insulated circuit board (1); - a printed circuit board (5) arranged above the insulated circuit board (1) and the semiconductor device (4) and having a through hole (6c); - a metal post (10) having a lower end bonded to an upper surface of the semiconductor device (3, 4) and a cylindrical section (10b) passing through the through hole (6c) and bonded to an upper surface of the printed circuit board (5) by means of a bonding material (12); - a housing (13) that surrounds the insulated circuit board (1), the semiconductor device (4), the printed circuit board (5) and the metal post (10); and - a sealing material (14) that seals an interior of the housing (13), wherein in the through-hole (6c) there is a gap between an outer circumference of the cylindrical sub-area (10b) and an area of ​​the printed circuit board (5) which defines the through-hole (6c) in a lateral direction. [2] Semiconductor module according to claim 1, wherein: - the metal post (10) has a base part area (10a) which is bonded to the upper surface of the semiconductor device (4) and - the width of the base part area (10a) is greater than the width of the through hole (6c). [3] Semiconductor module comprising: - an isolated circuit board (1); - a semiconductor device (3) mounted on the insulated circuit board (1); - a printed circuit board (5) arranged above the insulated circuit board (1) and the semiconductor device (3) and having a through hole (6a, 6b); - a metal post (9) having a lower end bonded to an upper surface of the semiconductor device (3) and a cylindrical section (9b) passing through the through hole (6a, 6b) and bonded to an upper surface of the printed circuit board (5) by means of a bonding material (12); - a housing (13) that surrounds the insulated circuit board (1), the semiconductor device (3), the printed circuit board (5) and the metal post (9); and - a sealing material (14) that seals an interior of the housing (13), wherein: - the metal post (9) has a base section (9a) and two cylindrical sections (9b, 9c), which are the cylindrical section (9b, 9c) and branch off from the base section (9a), - the printed circuit board (5) has two through holes (6a, 6b), which are the through hole (6a, 6b), and - the two cylindrical sections (9b, 9c) each penetrate through the two through holes (6a, 6b) and are bonded to the printed circuit board (5). [4] Semiconductor module according to claim 3, wherein: - the semiconductor device (3) includes two power electrodes (16a, 16b) which are provided separately from each other on the upper surface, and - the two cylindrical sections (9b) are each bonded to the two power electrodes (16a, 16b). [5] Semiconductor module according to one of the preceding claims, further comprising - a first bonding material (11) that bonds the metal post (9, 10) to the semiconductor device (3, 4); and - a second bonding material (12) that bonds the metal post (9, 10) to the printed circuit board (5), wherein a melting point of the first bonding material (11) is higher than a melting point of the second bonding material (12). [6] Semiconductor module according to one of the preceding claims, wherein the semiconductor device (3, 4) comprises a plurality of devices (3, 4) having different thicknesses and mounted on the insulated circuit board (1). [7] Semiconductor module according to one of the preceding claims, wherein the semiconductor device (3, 4) is made from a wide bandgap semiconductor. [8] Semiconductor module comprising: - an isolated circuit board (1); - first and second semiconductor devices (3, 4) mounted on the insulated circuit board (1); - a printed circuit board (5) arranged above the insulated circuit board (1) and the first and second semiconductor devices (3, 4) and having first and second through holes (6a, 6b, 6c) and a circuit structure (7) on a lower surface of the printed circuit board (5); - a metal post (10) having a lower end bonded to an upper surface of the first semiconductor device (4) and a cylindrical sub-section (10b) penetrating through the first through-hole (6c) and bonded to the printed circuit board (5); - a metal wire (18) having both ends connected to the circuit structure (7) and a hanging section bonded to the insulated circuit board (1); - a press-fit device (20) which is pressed into the second through-hole (6a, 6b) and has a lower end which is bonded to an upper surface of the second semiconductor device (3); - a housing (13) that surrounds the insulated circuit board (1), the first and second semiconductor devices (3, 4), the printed circuit board (5), the metal post (10), the metal wire (18) and the press-fit device (20); and - a sealing material (14) that seals the interior of the housing (13).

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