Electronic assembly and method for manufacturing an electronic assembly

By attaching the temperature sensor to a separate section of the substrate via a thermal connection and stand element, the solution addresses interference and space issues, achieving accurate temperature measurement with reduced installation space and costs.

DE102022211818B4Active Publication Date: 2025-12-04VOLKSWAGEN AG
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Patent Information

Application Number
DE102022211818
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-11-09
Publication Date
2025-12-04
Estimated Expiration
2042-11-09

AI Technical Summary

Technical Problem

Existing temperature sensor arrangements for power semiconductor elements suffer from interference and require large installation space, leading to inaccurate temperature measurements and increased manufacturing costs.

Method used

The solution involves attaching the temperature sensor to a different section of the substrate than the power semiconductor element, connected via a thermal connection element with good thermal conductivity, and using a stand element to maintain a distance, reducing interference and installation space requirements.

Benefits of technology

This arrangement enables accurate temperature measurement with minimal installation space, reducing interference from other elements and lowering manufacturing costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

Electronic assembly, comprising - at least one power semiconductor element (6), - at least one temperature sensor (7) and - at least one substrate (5), wherein the at least one temperature sensor (7) and the at least one power semiconductor element (6) are attached to the substrate (5) or to different substrates (5) in different sections from each other, wherein the at least one power semiconductor element (6) and the at least one temperature sensor (7) are connected via at least one thermal connecting element (8), characterized in that the thermal connecting element (8) is made of metal and a first end of the thermal connecting element (8) contacts the power semiconductor element (6) in a contact area and a further end of the thermal connecting element (8) contacts the temperature sensor (7) in a contact area.
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Description

[0001] The invention relates to an electronic assembly and a method for manufacturing an electronic assembly.

[0002] Power semiconductor devices such as IGBTs or MOSFETs are used in a wide variety of applications. For example, such power semiconductor devices are used to convert a DC voltage into AC, for instance to power an electric motor in a vehicle.

[0003] Power semiconductor elements are designed for a predetermined operating temperature range. For example, a maximum permissible operating temperature of the power semiconductor element must not be exceeded, as this can impair its functionality. Temperature sensors are used in a known manner to monitor the temperature, particularly during operation of a power semiconductor element.

[0004] Prior art patent US 2014 / 0233708 A1 discloses a medical device comprising a power unit and a temperature sensor. The temperature sensor is located outside the power unit, but in close proximity to it.

[0005] Also known is US 2013 / 0228890 A1, which discloses a power semiconductor module and temperature sensors, wherein a temperature sensor is sintered in an electrically insulating manner on a DBC substrate.

[0006] Also known is DE 196 30 902 B4, which discloses a device for temperature monitoring of a power semiconductor arrangement.

[0007] DE 101 25 694 A1 discloses a semiconductor module with at least one temperature sensor and with at least one power semiconductor, which is arranged on a first support.

[0008] DE 10 2008 056 846 A1 discloses a power semiconductor module, in particular a power semiconductor module with the capability for temperature measurement.

[0009] DE 10 2007 052 ​​630 A1 discloses a power semiconductor module with a temperature sensor.

[0010] A problem arises with known prior art temperature sensor arrangements relative to a power semiconductor element, as interference can occur, resulting in inaccurate temperature measurements of a selected power semiconductor element. For example, the temperature measurement of a selected power semiconductor element can be influenced by the heat radiation from other power semiconductor elements. Furthermore, temperature sensors that are mounted directly on a substrate require a large amount of installation space, which also leads to high manufacturing costs.

[0011] Another disadvantage is that inaccuracies in temperature measurement or determination lead to higher costs and increased installation space requirements, as tolerances in temperature determination affect the installation space required for the power semiconductor element. The greater the inaccuracy, the greater the installation space requirement and, in particular, the chip area requirement of the power semiconductor element on a given substrate. This is undesirable because a large chip area requirement, for example on a SiC substrate, leads to high manufacturing costs.

[0012] The technical problem therefore arises of creating an electronic assembly and a method for manufacturing an electronic assembly that enables the most accurate possible measurement of the temperature of a power semiconductor element, while in particular not increasing the space required.

[0013] The solution to the technical problem is provided by the articles with the features of the independent claims. Further advantageous embodiments of the invention are described in the dependent claims.

[0014] Proposed is an electronic assembly comprising at least one power semiconductor element, at least one temperature sensor, and at least one substrate. The power semiconductor element can be part of an inverter, in particular a pulse inverter. The pulse inverter, in turn, can serve to provide an operating (AC) voltage for an electric machine, which can be, in particular, a drive motor of an electric or hybrid vehicle. Thus, an inverter with such an electronic assembly, as well as a vehicle with such an inverter or with such an electronic assembly, is also described. The at least one temperature sensor serves to detect the temperature of the power semiconductor element, especially during operation of the power semiconductor element.The temperature sensor used to detect the temperature of a selected power semiconductor element can also be referred to as the temperature sensor associated with that (selected) power semiconductor element. The temperature sensor can be designed as a contact temperature sensor, in which a contact area is connected by a thermal interface element. However, the type of temperature sensor is not fundamentally limited to this embodiment. The temperature sensor can also be designed as a PTC thermistor, a resistance thermometer, or a thermocouple. Preferably, the temperature sensor is designed as a thermistor or so-called NTC element.

[0015] The substrate can, in particular, be a DBC substrate. Such a substrate can, in particular, comprise at least one electrically conductive layer, especially a copper layer, and a support layer, for example, a ceramic layer. Conductive track structures and contact pads can be produced on the substrate to attach components, in particular by soldering, sintering, or bonding, for example, the power semiconductor elements described above.

[0016] The at least one temperature sensor and the at least one power semiconductor element are attached to the substrate in different sections, in particular to or in different sections of the substrate surface. Specifically, the temperature sensor is not attached to the power semiconductor element. An arrangement in different sections can be achieved, in particular, if the power semiconductor element and the temperature sensor associated with it do not overlap in a common projection plane, which may be oriented parallel to a surface of the substrate, i.e., if they are arranged in a disjoint manner. Thus, the temperature sensor and the power semiconductor element can be attached to the same support, namely the substrate. Alternatively, the temperature sensor and the power semiconductor element can also be attached to different substrates.

[0017] Furthermore, the at least one power semiconductor element and the at least one temperature sensor, namely the temperature sensor associated with the power semiconductor element, are connected via at least one thermal connection element. The thermal connection element serves to transfer thermal energy from the power semiconductor element to the temperature sensor. The thermal connection element consists, in particular, of a material with good thermal conductivity, especially a thermal conductivity greater than that of air, preferably greater than that of a molding compound in which the power semiconductor element is embedded, e.g., greater than 0.5, more preferably greater than 1, and more preferably greater than 100. According to the invention, the thermal connection element is made of a metal such as copper.Thermal conductivity is given in W / mK and represents the heat flow through a material due to thermal conduction. It is possible that a housing containing at least one power semiconductor element is filled with a molding compound. A housing containing the temperature sensor may also be filled with a molding compound, but this is not mandatory. In this case, the thermal interface material may extend through the molding compound.

[0018] This advantageously results in a good thermal connection between the power semiconductor element and the associated temperature sensor, which can therefore detect the temperature of the power semiconductor element very accurately. This, in turn, advantageously enables precise temperature measurement.

[0019] In a preferred embodiment, the temperature sensor is connected to the substrate via a stand element. The temperature sensor or sensors can be arranged, and in particular attached, to a free end of the stand element, with another end of the stand element being attached to the substrate, particularly to its surface. Thus, a stand element can serve to hold / attach one or more temperature sensors to the substrate. In particular, by attaching the temperature sensor to a stand element, it can be arranged in a volume that is oriented orthogonally to and away from the substrate surface in a direction above a volume in which the power semiconductor element is arranged.The stator element thus enables the temperature sensor to be arranged at a distance from the substrate, in particular the substrate surface, which is greater than the distance of the power semiconductor element, whereby the distance can be detected along the direction explained.

[0020] This arrangement advantageously reduces the interference, particularly from other power semiconductor elements, on the temperature measurement. This is because the thermal connection element ensures that thermal energy is transferred from the power semiconductor element to which the temperature sensor is attached to the temperature sensor itself. At the same time, the distance between the temperature sensor and the substrate, and thus from other power semiconductor elements attached to the substrate surface, reduces their heat input. Simultaneously, it advantageously reduces the required installation space on the substrate surface, since only the mounting element, and not the temperature sensor itself, needs to be connected to the substrate surface. In this case, the required mounting area for the mounting element can be smaller than the mounting area required for the temperature sensor.Thus, the electronic assembly enables reliable and accurate temperature measurement while requiring minimal installation space on a substrate surface. In particular, the maximum diameter of the stand element can be less than 0.8 mm.

[0021] In another embodiment, the distance of the temperature sensor from a substrate surface is greater than the distance of the at least one power semiconductor element. This distance can be measured along an axis that is orthogonal to and oriented away from a surface of the substrate to which the power semiconductor element is attached. In other words, the temperature sensor can be located in a plane or volume further away from the surface than the at least one power semiconductor element. This has already been explained above. In particular, the distance of the temperature sensor from the substrate surface along the aforementioned axis can be greater than 0.16 mm and / or less than 10 cm. It is also possible for the distance of the temperature sensor from the at least one power semiconductor element along the aforementioned axis to be greater than 1 mm.

[0022] It is further possible that a minimum distance of the temperature sensor, in particular from a reference point such as a geometric center of the temperature sensor, from the at least one power semiconductor element, in particular a reference point such as a geometric center of the power semiconductor element, in a common projection plane oriented parallel to the substrate surface, is greater than 4 cm.

[0023] A larger distance between the temperature sensor results in the previously explained and more reliable temperature measurement, as the interference from other power semiconductor elements is reduced by the arrangement with a larger distance.

[0024] In another embodiment, the at least one power semiconductor element and at least part of the stator element are embedded in a molding compound. The molding compound, which can consist of epoxy resin in particular, serves to encapsulate the at least one semiconductor element, thus protecting it from external influences. Embedding at least part of the stator element in the molding compound advantageously results in a reliable and stable mounting of the temperature sensor in the substrate, since it is also encapsulated within the molding compound. It is possible, but not mandatory, for the entire stator element with the attached temperature sensor to be embedded in the molding compound.

[0025] In another embodiment, the stand element is connected to the substrate via a fixing element. The fixing element can be designed, in particular, for attachment to the substrate, whereby this attachment can be effected by sintering, soldering, or bonding in another manner. Here, the fixing element can have or form at least one attachment interface for securing the stand element. In this case, the stand element and the fixing element can be designed as separate elements. However, it is also possible for the stand element to form the fixing element, in which case the fixing element is an integral part of the stand element. The fixing element can serve to secure exactly one stand element or to secure several stand elements.Providing a fixing element advantageously results in a reliable mechanical attachment of the stand element and thus of the temperature sensor to the substrate.

[0026] In a further embodiment, at least one signal line is connected to the temperature sensor. The signal line can be used to transmit output signals, for example, a current signal, whereby the temperature can be determined as a function of the output signal. The signal line extends away from the temperature sensor as well as away from the power semiconductor element and away from the substrate surface. In particular, a directional component of the signal line's extension away from the temperature sensor, which is parallel to the direction orthogonal to and away from the substrate surface, can be non-zero. This advantageously results in the output signals generated or provided by the temperature sensor not being, or only to a very limited extent, influenced by other components of the electronic assembly, e.g.,through heat radiation, which enables reliable and accurate temperature determination.

[0027] In a further embodiment, the electronic assembly comprises a group of at least two power semiconductor elements, wherein at least one temperature sensor, preferably a group of at least two temperature sensors, is associated with this power semiconductor element group. Preferably, a group with a number n of power semiconductor elements is associated with a group with the same number n of temperature sensors, wherein each power semiconductor element of the group is associated with one temperature sensor of the group. Furthermore, the power semiconductor elements of the power semiconductor element group and the temperature sensors of the temperature sensor group associated with them are attached to or arranged in different sections of the substrate. The temperature sensors can be attached to the substrate in the section via a common mounting element or via individual mounting elements.In this configuration, a boundary line of the power semiconductor element group, encompassing all power semiconductor elements in the group, and a boundary line of the temperature sensor group, encompassing all temperature sensors in the group, cannot intersect in a common projection plane, which may be oriented parallel to the substrate surface. The boundary line can, in particular, be a line of minimal length that delimits the area in which all power semiconductor elements of the corresponding group are arranged. The same applies to the boundary line of the temperature sensor group. In other words, the areas enclosed by these boundary lines can be arranged disjointly in the common projection plane. This advantageously simplifies the fabrication of the electronic assembly, as the assembly work for attaching the temperature sensors only needs to be carried out in one, rather than multiple, areas.

[0028] In another embodiment, several stand elements are connected to the substrate via a common fixing element. This also advantageously simplifies the manufacturing of the electronic assembly, since only one fixing element is required to attach multiple stand elements. This also reduces manufacturing costs.

[0029] In a further embodiment, the temperature sensor has at least one signal connection area for a signal terminal. This signal terminal can serve for electrical contact via the signal line described above. The output signal described above can be provided via the signal connection area. Furthermore, the temperature sensor has a connection area for the thermal connector, which is distinct from the at least one signal connection area. In particular, the at least one signal connection area and the connection area for the thermal connector can be electrically isolated from one another.The connection area for the thermal connector on the power semiconductor element can also differ from an electrical connection area for an electrical (signal) connection of the power semiconductor element and, in particular, be arranged or designed in isolation from this electrical connection area. This advantageously results in increased operational reliability of the electronic assembly, as the risk of electrical energy transfer between the power semiconductor element and the temperature sensor, which could damage at least one of the two elements, is reduced.

[0030] A further proposed method for manufacturing an electronic assembly is presented, comprising providing at least one power semiconductor element, at least one temperature sensor, and at least one substrate, wherein the at least one temperature sensor and the at least one power semiconductor element are attached to the substrate or to different substrates in separate sections, and wherein the at least one power semiconductor element and the at least one temperature sensor are connected via at least one thermal connection element. The method advantageously enables the manufacture of an electronic assembly according to one of the embodiments described in this disclosure, with the corresponding and already explained technical advantages.

[0031] A further description concerns a method for measuring the temperature of at least one power semiconductor element of an electronic assembly according to one of the embodiments described in this disclosure. Here, an output signal from the at least one temperature sensor, which is connected to the power semiconductor element via a thermal connection, is acquired, and the temperature of the power semiconductor element is determined as a function of the output signal. The temperature determination can be carried out using an evaluation unit, which may include or be designed as a microcontroller or an integrated circuit. This unit can be connected to the temperature sensor, for example, via the at least one signal line. It is also possible that error correction is performed during the determination.In particular, the correction to compensate for distance-related losses during the transfer of thermal energy from the power semiconductor element to the temperature sensor can be performed via the thermal connection element. This advantageously results in a more accurate temperature determination.

[0032] The invention is explained in more detail using exemplary embodiments. The individual figures show: Fig. 1 a schematic cross-section through an electronic assembly according to the invention in a first embodiment; Fig. 2 a schematic cross-section through an electronic assembly according to the invention in a further embodiment; Fig. 3 a schematic cross-section through an electronic assembly according to the invention in a further embodiment; Fig. 4 a schematic perspective view of an electronic assembly according to the invention in a further embodiment; Fig. 5a a schematic top view of an electronic assembly according to the invention in a further embodiment; Fig. 5b a schematic top view of an electronic assembly according to the invention in a further embodiment; Fig. 5c a schematic top view of a further electronic assembly according to the invention in a further embodiment; and Fig. 6 A schematic top view of several electronic assemblies.

[0033] In the following, identical reference symbols denote elements with the same or similar technical characteristics.

[0034] Fig. Figure 1 shows a schematic cross-section through an electronic assembly 1 according to a first embodiment of the invention. The electronic assembly 1 comprises a substrate 5 with a support layer 2, in particular a ceramic support layer, which can be made, for example, of Al2O3 or Si3N4. A first conductive layer 3, for example a copper layer, is arranged on a top side of the support layer 2, with a further conductive layer 4, for example also a copper layer, being arranged on an opposite side, i.e., a bottom side, of the support layer 2. Together, the support layer 2 and the conductive layers 3, 4 form a substrate. A power semiconductor element 6 is arranged and attached to a top side of the substrate 5, in particular in a recess of the first conductive layer 3 and on the surface of the support layer 2 exposed thereby, for example by soldering or sintering.

[0035] The electronic assembly 1 further comprises a temperature sensor 7, which is also attached to the substrate surface, namely the surface of the support layer 2 in a further recess in the first conductive layer 3, in particular also by soldering or sintering. It is shown that the temperature sensor 7 and the power semiconductor element 6 are attached to the substrate 5, in particular the substrate surface, in separate sections.

[0036] A thermal connection element 8 is further shown, extending from the power semiconductor element 6 to the temperature sensor 7. A first end of the thermal connection element 8, which can be, for example, a copper wire, contacts the power semiconductor element 6 in a contact area or contact section. Likewise, another end of the thermal connection element 8 contacts the temperature sensor 7 in a corresponding contact area. The contact areas can be electrically insulated from other areas of the power semiconductor element 6 or the temperature sensor 7. The thermal connection element 8 can be made of aluminum, copper, or another thermally conductive material. The thermal connection element can also be designed as a heat pipe.

[0037] A signal line 9 for electrically contacting the temperature sensor 7 is also shown. This signal line 9 serves to transmit, in particular, a current signal, whereby the temperature of the temperature sensor 7, and thus of the power semiconductor element 6, can be determined as a function of the current signal, for example by an evaluation device (not shown). It is further shown that the signal line 9 extends from both the temperature sensor 7 and the substrate surface.

[0038] Fig. Figure 2 shows a schematic cross-section through an electronic assembly 1 according to the invention in a further embodiment. In contrast to the one in Fig. In the embodiment shown in Figure 1, the temperature sensor 7 is connected to the substrate 5 via a stand element 10. The stand element 10 is attached to the substrate surface, specifically in a recess of the conductive layer 3 on a surface of the support layer 2, by means of a fixing element 11. In particular, a first end of the stand element 10 is attached to the fixing element 11. The fixing element 11 and the stand element 10 can be separate components. However, it is also possible for the fixing element 11 to be an integral part of the stand element 10.

[0039] At a free, unattached end, the stand element 10 has a mounting section 12 for the temperature sensor 7. This mounting section 12 can be plate-shaped, with the temperature sensor 7 being attached to a surface of the section 11, in particular by a material bond such as gluing.

[0040] Also shown is the thermal connecting element 8, which thermally connects the power semiconductor element 6 and the temperature sensor 7. From the comparison of the embodiments in Fig. 1 and Fig. 2. It follows that the thermal connecting element 8 can be curved, but also straight.

[0041] It is evident that the distance of the temperature sensor 7 from a substrate surface, in particular a surface of the support layer 2 or a surface of the first conductive layer 3, is greater than the distance of the at least one power semiconductor element 6, wherein the distance can be measured along a z-direction z which is in Fig. 2 is symbolized by an arrow. The distance can denote a distance between a side (underside) of the temperature sensor 7 / power semiconductor element 6 facing the substrate surface, or the distance between a reference point, e.g., a geometric center, of the respective element and the substrate surface. Also shown is an x-direction x, which is oriented orthogonally to the z-direction z and parallel to a plane of the substrate surface. Not shown is a transverse direction, which can be oriented orthogonally to both the x-direction x and the z-direction z and which spans a plane with the x-direction x that is oriented parallel to the substrate surface.

[0042] Along the z-direction, the distance between temperature sensor 7 and the substrate surface can be greater than 1 cm, for example. Along the x-direction, the distance between the power semiconductor element 6 and the temperature sensor 7 can be greater than 4 cm, in particular.

[0043] A first build volume 13, enclosed by a dashed line, contains the power semiconductor element 6 and at least part of the stator element 7. This first build volume 13 can be filled with a molding compound. A second build volume 14, also enclosed by a dashed line, contains the remaining part of the stator element 10 and the temperature sensor 7. This second build volume 14 is located above / after the first build volume 13 along the z-direction.

[0044] Fig. Figure 3 shows a schematic cross-section through an electronic assembly according to a further embodiment of the invention. It shows that the fixing element 11 is attached to the substrate surface, which is formed by the carrier layer 2 in the mounting section for the stand element 10, via a bonding layer 15, for example an adhesive layer or a sintered layer.

[0045] Fig. Figure 4 shows a perspective view of an electronic assembly 1 in a further embodiment. Shown are six power semiconductor elements 6 and temperature sensors 7 assigned to each of these power semiconductor elements 6, each arranged on stator elements 10. It is also shown that all stator elements 10 are attached to a common fixing element 11.

[0046] Also shown are thermal connection elements 8, each of which thermally connects a power semiconductor element 6 to a temperature sensor 7. The substrate 5 is also shown, to which both the power semiconductor elements 6 and the temperature sensors 7 are attached via the stator elements 10. For clarity, only one stator element 10 and signal lines 9 of a signal line pair for connecting a temperature sensor 7 are marked with a reference symbol.

[0047] The power semiconductor elements 6 form elements of a power semiconductor element group. Similarly, the temperature sensors 7 form elements of a temperature sensor group. It is evident that the power semiconductor elements 6 of the group and the temperature sensors 7 of the group are arranged in different areas of the substrate surface or attached to it in different areas of the substrate surface.

[0048] Fig. Figure 5a shows a schematic top view of an electronic assembly 1 according to the invention, comprising a substrate 5 to which temperature sensors 7 and power semiconductor elements 6 are attached. Also shown are thermal connecting elements 8, each of which thermally connects a power semiconductor element to a temperature sensor 7. It is further shown that the temperature sensor 7 associated with each power semiconductor element 6 is attached to the substrate surface spatially adjacent to the area of ​​the corresponding power semiconductor element 6. The temperature sensors 7 are each individually attached to the substrate surface in different areas via a stator element 10 and a fixing element 11, wherein the distance between a power semiconductor element 6 and its associated temperature sensor 7 is smaller than any of the distances between the temperature sensor 7 and the remaining power semiconductor elements 6.

[0049] Fig. Figure 5b shows a further schematic top view of an electronic assembly 1 according to the invention. Shown are six power semiconductor elements 6, each of which is connected to a temperature sensor 7 via thermal connection elements 8, wherein 3 temperature sensors 7 are connected via a common fixing element 11 (see e.g. Fig. 4) are attached to the substrate surface. A first power semiconductor element group with three power semiconductor elements 6 is associated with a first temperature sensor group with three temperature sensors 7, wherein the power semiconductor elements 6 of this first power semiconductor element group are each connected to the temperature sensors 7 of this first temperature sensor group via thermal connection elements 8, and these temperature sensors 7 are attached to a common fixing element 11 via stator elements 10, the common fixing element 11 being in turn attached to the substrate surface.

[0050] A second power semiconductor element group also comprises three power semiconductor elements 6, each of which is thermally connected via a thermal connection element 8 to temperature sensors 7 of a second temperature sensor group, which also comprises three temperature sensors 7. These temperature sensors 7 are attached via stator elements 10 to a further common fixing element 11, the further common fixing element 11 being in turn attached to the substrate surface. All temperature sensors 7 and power semiconductor elements 6 of the respective groups are attached to the substrate surface in different areas.

[0051] It is evident that the arrangement of power semiconductor elements 6 of a group and the temperature sensors 7 associated with them is such that the distances between the power semiconductor elements 6 (of a selected group) and the temperature sensors 7 associated with them are smaller than the distances between the other power semiconductor elements (of the remaining group(s)) and these temperature sensors 7. It is also evident that the power semiconductor elements 6 of a group and the temperature sensors 7 associated with them are arranged such that a thermal connection element 8, which connects a selected power semiconductor element 6 to a temperature sensor 7, does not extend over another power semiconductor element 6.

[0052] Fig. Figure 5c shows a schematic top view of an electronic assembly 1 according to the invention in a further embodiment. In contrast to the one shown in Fig. In the embodiment shown in 5b, the arrangement of power semiconductor elements 6 of a group and the temperature sensors 7 associated with them is such that a thermal connecting element 8, which connects a selected power semiconductor element 6 to a temperature sensor 7, is guided over another power semiconductor element 6.

[0053] Fig. Figure 6 shows a schematic perspective view of several electronic assemblies 1, each comprising a substrate 5 and six semiconductor elements 6. A first electronic assembly 1a of these several electronic assemblies 1 comprises eighteen temperature sensors 7, each attached to a substrate surface of the substrate 5 of this first electronic assembly 1a via stator elements 10. For clarity, only one temperature sensor 7, one stator element 10, and one fixing element 11 are labeled with a reference symbol.The illustration shows that a first group of six temperature sensors 7 are attached to the substrate surface of the substrate 5 of the first electronic assembly 1a via a first fixing element 11, wherein the temperature sensors 7 of this first temperature sensor group are assigned to power semiconductor elements 6 of a second electronic assembly 1b and are connected to a power semiconductor element 6 of this second electronic assembly 1b via thermal connection elements 8, wherein the power semiconductor elements 6 of the second electronic assembly 1b are attached to a substrate 5 of the second electronic assembly (which is different from the substrate 5 of the first electronic assembly 1a).A second group of temperature sensors 7 is further shown, which are connected to the substrate surface of the substrate 5 of the first electronic assembly 1a via a second fixing element 11b and which are assigned to the power semiconductor elements 6 of a third electronic assembly 1c, wherein these temperature sensors 7 are each thermally connected to one of these power semiconductor elements 6 via a thermal connecting element 8. The power semiconductor elements 6 of the third electronic assembly 1c are attached to a substrate 5 of the third electronic assembly 1c (which differs from the substrate 5 of the first electronic assembly 1a and from the substrate 5 of the second electronic assembly 1b).

[0054] A third group of temperature sensors 7 is also shown. These sensors are connected to the substrate surface of the substrate 5 of the first electronic assembly 1a via a third fixing element 11c and are assigned to the power semiconductor elements 6 of the first electronic assembly 1a, each of which is connected to them via a thermal connection element 8. The power semiconductor elements 6 of the first electronic assembly 1a are attached to a substrate 5 of the first electronic assembly 1a.

[0055] From the combination of Fig. 5a, Fig. 5b and Fig. 5c and also Fig. 6. It follows that the number and arrangement of the temperature sensors 7 or temperature sensor groups can be freely chosen. Reference symbol list 1 Electronic assembly 2 Carrier layer 3. First conductive layer of the substrate 4. Second conductive layer of the substrate 5 Substrat 6 Power semiconductor element 7 Temperature sensor 8 thermal connecting element 9 Signal line 10 Stand element 11 Fixing element 12 Fastening section 13 first volume range 14 second volume range 15 Compound layer z z-direction x x-direction

Claims

[1] Electronic assembly comprising - at least one power semiconductor element (6), - at least one temperature sensor (7) and - at least one substrate (5), wherein the at least one temperature sensor (7) and the at least one power semiconductor element (6) are attached to the substrate (5) or to different substrates (5) in different sections from each other, wherein the at least one power semiconductor element (6) and the at least one temperature sensor (7) are connected via at least one thermal connecting element (8), characterized by , that the thermal connecting element (8) is made of metal and a first end of the thermal connecting element (8) contacts the power semiconductor element (6) in a contact area and a further end of the thermal connecting element (8) contacts the temperature sensor (7) in a contact area. [2] Electronic assembly according to claim 1, characterized by , that the temperature sensor (7) is connected to the substrate (5) via a stand element (10). [3] Electronic assembly according to any of the preceding claims, characterized by , that the distance of the temperature sensor (7) from a substrate surface is greater than the distance of the at least one power semiconductor element (6) from the substrate surface. [4] Electronic assembly according to one of claims 2 to 3, characterized by , that the at least one power semiconductor element (6) and at least a part of the stator element (10) are embedded in a molding compound. [5] Electronic assembly according to any one of the preceding claims 2 to 4, characterized by , that the stand element (10) is connected to the substrate (5) via a fixing element (11). [6] Electronic assembly according to any of the preceding claims, characterized by, that at least one signal line (9) is connected to the temperature sensor (7), wherein the at least one signal line (9) extends away from the temperature sensor (7) as well as away from the power semiconductor element (6). [7] Electronic assembly according to any of the preceding claims, characterized by , that the electronic assembly (1) comprises a group of at least two power semiconductor elements (6), wherein at least one temperature sensor (7) is associated with this power semiconductor element group, wherein the power semiconductor elements (6) of the power semiconductor element group and the temperature sensors (7) of a temperature sensor group are attached to the substrate (5) in different sections from each other. [8] Electronic assembly according to any of the preceding claims, characterized by , that several stand elements (10) are connected to the substrate (5) via a common fixing element (11). [9] Electronic assembly according to any of the preceding claims, characterized by , that the temperature sensor (7) has at least one signal connection area for a signal connection, wherein a connection area for the thermal connecting element (8) is different from the at least one signal connection area. [10] Method for manufacturing an electronic assembly (1) wherein at least one power semiconductor element (6), at least one temperature sensor (7) and at least one substrate (5) are provided, wherein the at least one power semiconductor element (6) and the at least one temperature sensor (7) are attached to the substrate (5) or to different substrates (5) in different sections from each other, wherein the at least one power semiconductor element (6) is connected to the temperature sensor (7) via at least one thermal connection element (8), characterized by, that the thermal connecting element (8) is made of metal and a first end of the thermal connecting element (8) contacts the power semiconductor element (6) in a contact area and a further end of the thermal connecting element (8) contacts the temperature sensor (7) in a contact area.

Citation Information

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