LIGHT EMISSIONING DEVICE AND LIGHT EMISSIONING MODULE

Abstract

Light-emitting device (100), comprising: a submount (30) having a mounting surface (31), wherein the submount (30) includes a wiring pattern (32) arranged on the mounting surface (31), the wiring pattern (32) comprising a first region (32A) and a second region (32B) connected to the first region (32A) at a first position on the mounting surface (31); a semiconductor laser element (20) arranged on the first region (32A) of the wiring pattern (32); and a protective element (50) arranged on the second region (32B) of the wiring pattern (32), wherein a width of the first region (32A) of the wiring pattern (32) in a first direction greater than a width of the semiconductor laser element (20) in the first direction and equal to or less than a first distance, a length of the first region (32A) of the wiring pattern (32) in a second direction between the first position and a distal end of the first region (32A) is a second distance, wherein the second direction is orthogonal to the first direction, the second region (32B) is located on the opposite side of the first region (32A) with respect to the first position in a plan view, a maximum width of the second region (32B) in the first direction is greater than the width of the first region (32A) in the first direction at the first position, and an interval in the second direction between the semiconductor laser element (20) and the protective element (50) is greater than 0 µm and less than 170 µm.

Description

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a light-emitting device or a light-emitting module.

[0002] In a light-emitting device disclosed in the Japanese unexamined patent application Publication No. JP 2020-126992A, a wiring pattern on a submount is developed. Furthermore, the aforementioned publication discloses a shape that is effective for size reduction in a form in which a plurality of light-emitting elements are arranged on a submount.

[0003] US 2022 / 0102332A1 discloses a light-emitting device comprising first and second light-emitting elements, first and second support elements each connected to the first and second light-emitting elements, first and second protective elements, and a plurality of wiring arrangements.

[0004] US 2023 / 0108294A1 discloses a lighting module comprising a wiring substrate, a first and a second base, three or more first subassemblies, four or more second subassemblies, three or more first lighting elements, and four or more second lighting elements.

[0005] When multiple components are fastened in a specific region, the number of components that can be arranged within that region can increase because the majority of components can be positioned closer together. Even when the same number of components are arranged, if certain components can be positioned closer together, a sufficient interval between them is created, which can improve stability or increase the degrees of freedom for fastening.

[0006] When considering a shape in a specific region, e.g., in which direction a width is sufficient and in which direction a width is insufficient, a higher priority can be given to a preferred direction in which a fastening interval of the majority of components is improved. SUMMARY OF THE INVENTION

[0007] The present invention has the objective of reducing, in a desired direction, a fastening region necessary for arranging a plurality of components.

[0008] One embodiment discloses a light-emitting device comprising a submount, a semiconductor laser element, and a protective element. The submount has a mounting surface. The submount includes a wiring pattern arranged on the mounting surface. The wiring pattern comprises a first region and a second region connected to the first region at a first position on the mounting surface. The semiconductor laser element is arranged on the first region of the wiring pattern. The protective element is arranged on the second region of the wiring pattern. The width of the first region of the wiring pattern in a first direction is greater than the width of the semiconductor laser element in the first direction and equal to or less than a first distance.The length of the first region of the wiring pattern in a second direction between the first position and a distal end of the first region is a second distance. The second direction is orthogonal to the first direction. The second region is located on the opposite side of the first position with respect to the first region in a top view. The maximum width of the second region in the first direction is greater than the width of the first region in the first direction at the first position. The interval in the second direction between the semiconductor laser element and the protective element is greater than 0 µm and less than 170 µm.

[0009] According to certain embodiments of the disclosure, a fastening region required for fastening a plurality of components can be reduced in a desired direction. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a perspective view of a light-emitting device according to a first embodiment. Fig. Figure 2 is a top view of the light-emitting device according to the first embodiment. Fig. Figure 3 is a top view showing each component arranged within the light-emitting device according to the first embodiment. Fig. 4 is a cross-sectional view along a cross-sectional line IV-IV in Fig. 3. Fig. Figure 5 is a perspective view of a submount according to each embodiment. Fig. Figure 6 is a top view of the submount according to each embodiment. Fig. Figure 7 is a cross-sectional view along a cross-sectional line VII-VII in Fig. 6. Fig. Figure 8 is a perspective view in a state where a semiconductor laser element and the like are arranged on the submount. Fig. Figure 9 is a top view in the state in which the semiconductor laser element and the like are arranged on the submount. Fig. Figure 10 is a cross-sectional view along a cross-sectional line XX in Fig. 9. Fig. Figure 11 is a top view of a submount, which serves as an example of a comparison target. Fig. Figure 12 is a top view in a state in which the semiconductor laser element and the like are arranged on the submount, which is given as an example of the comparison target. Fig. Figure 13 is a perspective view showing another example in a state where the semiconductor laser element and the like are arranged on the submount. Fig. Figure 14 is a top view showing the other example in the state in which the semiconductor laser element and the like are arranged on the submount. Fig. Figure 15 is a perspective view of a light-emitting module according to a second embodiment. Fig. Figure 16 is a top view of the light-emitting module according to the second embodiment. Fig. Figure 17 is a top view showing each component arranged within the light-emitting device contained in the light-emitting module according to the second embodiment. DETAILED DESCRIPTION

[0010] In this description and within the scope of the claims, polygons such as triangles and quadrilaterals, including shapes where the vertices of the polygon are rounded, chamfered, beveled, grooved, or the like, are referred to as polygons. Furthermore, a shape obtained by machining not only the vertices (ends of sides) but also an intermediate region of a side is also referred to as a polygon. That is to say, a shape that is partially machined while remaining a polygon shape as its basis is included in the interpretation of "polygon" as described in this description and within the scope of the claims.

[0011] The same applies not only to polygons but also to words that represent specific shapes such as trapezoids, circles, protrusions, and recesses. Furthermore, the same applies to each face that forms that shape. That is, even if an edit is made to a corner or an intermediate area of ​​a given face, the interpretation of "face" includes the edited area. It should be noted that if a "polygon" or "face" that has not been partially edited is to be distinguished from an edited shape, "strict" is added to the description, as in "strict quadrilateral."

[0012] Furthermore, in the description and the claims, terms such as top and bottom (upward / downward), left and right, above and below, front and back (forward / backward), and near and far are used only to describe the relative relationship of positions, orientations, directions, and the like, and the expressions do not necessarily have to correspond to an actual relationship at the time of use.

[0013] In the drawings, directions such as an X direction, a Y direction, and a Z direction can be indicated using arrows. The directions of the arrows are consistent across multiple drawings of the same embodiment. In the drawings, the direction of the arrows labeled X, Y, and Z is referred to as the positive direction, and the direction opposite to the positive direction is referred to as the negative direction. For example, the direction indicated by X at the end of the arrow is the X direction and the positive direction. It should be noted that a direction that is the X direction and the positive direction is referred to as the "positive direction of X," and a direction that is opposite to the positive direction of X is referred to as the "negative direction of X." The same applies to the Y direction and the Z direction.

[0014] Furthermore, the terms "component" and "area" can be defined when, for example, a component or similar item is described in this description. The term "component" refers to an object that is physically handled on its own. This object could be one that is treated as a component in a manufacturing step. On the other hand, the term "area" refers to an object that does not require physical handling on its own. The term "area" is used, for example, when a part of a component is considered separately.

[0015] It should be noted that the distinction between "component" and "area" described above is not intended to deliberately limit the scope of rights under an interpretation of the doctrine of equivalents. In other words, even if a component is described as a "component" in the claims, this does not mean that the applicant acknowledges that a physical treatment of the component alone is essential for the application of the present invention.

[0016] Furthermore, if the description and claims contain multiple components and each component is to be designated separately, the components can be distinguished by adding the terms "first" and "second" to the beginning of the component's designation. Additionally, the objects to be distinguished may differ between the description and the claims. Therefore, even if a component is given the same term in the claims as in the description, the object specified by that component may not be the same in both the description and the claims.

[0017] For example, if there are components distinguished by the terms "first," "second," and "third" in their description, and if components with the terms "first" and "third" are described in the claims, these components can be distinguished by referring to them as "first" and "second" in the claims for clarity. In this case, the components with the terms "first" and "second" in the claims refer to the components with the terms "first" and "third," respectively, in the description. It should be noted that this rule is not limited to components but can also be applied to other objects in an appropriate and flexible manner.

[0018] Embodiments for implementing the present invention are described below. Furthermore, specific embodiments for implementing the present invention are described below with reference to the drawings. It should be noted that embodiments for implementing the present invention are not limited to the specific embodiments shown. In other words, the embodiments shown are not the only way in which the present invention is realized. It should also be noted that the sizes, positional relationships, and the like of components shown in the drawings may sometimes be exaggerated for clarity. First embodiment

[0019] Fig. Figures 1 to 14 are drawings that represent an exemplary shape of a light-emitting device 100 according to a first embodiment. Fig. Figure 1 is a perspective view of the light-emitting device 100. Fig. Figure 2 is a top view of the light-emitting device 100. Fig. Figure 3 is a top view showing each component arranged inside the light-emitting device 100. Fig. 4 is a cross-sectional view along a cross-sectional line IV-IV in Fig. 3. Fig. 5 is a perspective view of a submount 30. Fig. Figure 6 is a top view of submount 30. Fig. Figure 7 is a cross-sectional view along a cross-sectional line VII-VII in Fig. 6. Fig. Figure 8 is a perspective view showing a state in which a semiconductor laser element 20 and a protective element 50 are arranged on the submount 30. Fig. 9 is a top view in the same state as in Fig. 8. Fig. Figure 10 is a cross-sectional view along a cross-sectional line XX in Fig. 9. Fig. Figure 11 is a top view of a submount, which serves as an example of a comparison target. Fig. Figure 12 is a top view in a state where the semiconductor laser element 20 and the protection element 50 are arranged on the submount, which is specified as the example for the comparison target. It should be noted that Fig. 11 and Fig. 12 merely represent an example for a better understanding of the invention and are not a so-called comparative example in the sense of the prior art. Fig. Figure 13 is a perspective view showing another example in a state where the semiconductor laser element 20 and the protective element 50 are arranged on the submount 30. Fig. Figure 14 is a top view in the same state as in Fig. 13.

[0020] The light-emitting device 100 contains a plurality of components. The plurality of components contained in the light-emitting device 100 include a base 10, one or a plurality of semiconductor laser elements 20, one or a plurality of submounts 30, one or a plurality of reflective components 40, one or a plurality of protective elements 50, a cover component 60, and a lens component 70.

[0021] It should be noted that the light-emitting device 100 may also contain a component other than those described above. For example, the light-emitting device 100 may also contain a light-emitting element that differs from one or more semiconductor laser elements 20. Furthermore, the light-emitting device 100 may not contain some of the components described above.

[0022] First, each of the components of the light-emitting device 100 is described, and then the light-emitting device 100 is described. Base 10

[0023] The base 10 comprises a top surface 11A, a bottom surface 11B, and one or more outer lateral surfaces 11C. In a top view, one shape of the outer edge of the base 10 is rectangular. This rectangular shape can be a shape with long sides and short sides. In the base 10 shown, one direction of the long side of the rectangle is the same direction as the X-direction, and one direction of the short side is the same direction as the Y-direction. It should be noted that the shape of the outer edge of the base 10 in the top view need not be rectangular.

[0024] A recessed shape is formed in base 10. A recess extending downwards from upper surface 11A is formed by the upper surface 11A. The recess is defined by the recessed shape of base 10. In the top view, the recess is surrounded by upper surface 11A.

[0025] An inner edge of the upper surface 11A defines an outer edge of the recess. In other words, the shape of the inner edge of the upper surface 11A and the shape of the outer edge of the recess are identical. In the top view, the shape of the outer edge of the recess is rectangular. This rectangular shape can be a shape with long sides and short sides. In the depicted base 10, the direction of a long side of the rectangle is the same as the X-direction, and the direction of a short side is the same as the Y-direction. It should be noted that the shape of the outer edge of the recess need not be rectangular.

[0026] Base 10 contains a mounting surface 11D. Furthermore, base 10 contains one or more internal lateral surfaces 11E. Mounting surface 11D is located below upper surface 11A and above lower surface 11B. Mounting surface 11D is an upper surface. Therefore, it can be said that mounting surface 11D is an upper surface, distinct from upper surface 11A. Mounting surface 11D is a flat surface with a shape where the width in the X-direction is greater than the length in the Y-direction.

[0027] One or more inner lateral surfaces 11E are located above the mounting surface 11D. One or more inner lateral surfaces 11E intersect the upper surface 11A. The mounting surface 11D and one or more inner lateral surfaces 11E are contained within a plurality of surfaces that define the recess of the base 10. One or more inner lateral surfaces 11E define the shape of the outer edge of the recess.

[0028] One or more of the inner lateral surfaces 11E are provided orthogonal to the mounting surface 11D. The term "orthogonal" here allows a deviation of ± 3 degrees. It should be noted that the inner lateral surface 11E need not be orthogonal to the mounting surface 11D.

[0029] The base 10 contains one or more stepped regions 12C. The stepped region 12C contains a top surface and an inner lateral surface that intersects the top surface and extends downwards from the top surface. The surface contained within the stepped region 12C does not contain an inner lateral surface extending upwards from the top surface. The top surface of the stepped region 12C intersects the inner lateral surface 11E. The inner lateral surface 11E extends upwards from the top surface of the stepped region 12C. The inner lateral surface of the stepped region 12C intersects the mounting surface 11D.

[0030] The stepped region 12C is formed along part or all of the inner lateral surface 11E in the top view. One or more stepped regions 12C are formed within the upper surface 11A in the top view. One or more stepped regions 12C are formed within one or more inner lateral surfaces 11E in the top view.

[0031] The base 10 can contain the plurality of stepped regions 12C. Each of the plurality of stepped regions 12C is formed along the inner lateral surface 11E in the plan view. The plurality of stepped regions 12C includes the stepped region 12C that is formed along the inner lateral surface 11E over its entire length in the plan view.

[0032] One or more wiring patterns are provided on the upper surface of the stepped area 12C. This wiring pattern is electrically connected to another wiring pattern via a wiring conductor that runs through the interior of the base 10. The other wiring pattern is provided, for example, on the lower surface of the base 10. It should be noted that this wiring pattern may also be electrically connected to a wiring pattern on the upper surface 11A or the outer lateral surface 11C.

[0033] The majority of wiring patterns can be provided on the upper surface of one or more stepped regions 12C. Each of the majority of stepped regions 12C can contain one or more wiring patterns. It should be noted that in base 10, a location where the wiring pattern is provided need not be limited to stepped region 12C.

[0034] The base 10 can be formed using ceramic as a main material. Furthermore, the base 10 can be formed by connecting a base component, formed using metal or a metal-containing composite as the main material and containing the fastening surface 11D, to a frame component, formed using ceramic as a main material and containing the wiring pattern.

[0035] Here, the main material refers to the material that constitutes the largest proportion of a product in terms of weight or volume. It's important to note that if a target product is made from a specific material, then that material is the main material. In other words, if a particular material is the main material, its percentage can be 100%.

[0036] Examples of ceramics include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide. Examples of metals include copper, aluminum, and iron. Alternatively, copper-molybdenum, a copper-diamond composite, copper-tungsten, and similar metal-containing composites can be used. Semiconductor laser element 20

[0037] The semiconductor laser element 20 contains a light-emitting surface that emits light. The semiconductor laser element 20 has a top surface, a bottom surface, and a plurality of lateral surfaces. The top surface or the lateral surface of the semiconductor laser element 20 is the light-emitting surface. The semiconductor laser element 20 contains one or a plurality of light-emitting surfaces.

[0038] One possible shape for the upper surface of the semiconductor laser element 20 is a rectangular shape with long sides and short sides. A lateral surface, having one short side of the rectangle, can be the light-emitting surface. It should be noted that the shape of the upper surface of the semiconductor laser element 20 does not have to be rectangular.

[0039] A single-emitter semiconductor laser element can be used for the semiconductor laser element 20. Furthermore, a multi-emitter semiconductor laser element, containing a plurality of emitters, can be used for the semiconductor laser element 20.

[0040] The semiconductor laser element 20 can, for example, be a light-emitting element that emits blue light, a light-emitting element that emits green light, or a light-emitting element that emits red light. It should be noted that the semiconductor laser element 20 can also be a light-emitting element that emits light of a different color or light with a different wavelength.

[0041] Blue light refers to light with an emission peak wavelength in the range of 420 nm to 494 nm. Green light refers to light with an emission peak wavelength in the range of 495 nm to 570 nm. Red light refers to light with an emission peak wavelength in the range of 605 nm to 750 nm.

[0042] The semiconductor laser element 20 emits laser light that exhibits directional properties. Diverging light, which propagates, is emitted from a light-emitting surface (emission end surface) of the semiconductor laser element 20. The light emitted by the semiconductor laser element 20 forms a far-field pattern (hereinafter referred to as "FFP") of elliptical shape in a plane parallel to the light-emitting surface. The FFP indicates the shape and light intensity distribution of the emitted light at a position separated from the light-emitting surface.

[0043] Here, light passing through the center of the elliptical shape of the FFP—in other words, light exhibiting a peak intensity in the FFP's light intensity distribution—is referred to as light propagating along an optical axis or as light traversing an optical axis. Based on the FFP's light intensity distribution, light with an intensity of 1 / e 2 or more in terms of a peak intensity value, referred to as a main area of ​​light.

[0044] The shape of the FFP (field plane) of the light emitted by the semiconductor laser element 20 is elliptical, with the light being longer in one layering direction than in a direction orthogonal to the layering direction in the plane parallel to the light emission surface. The layering direction is the direction in which a plurality of semiconductor layers, containing an active layer, are stacked in the semiconductor laser element 20. The direction orthogonal to the layering direction can also be referred to as the direction of the plane of the semiconductor layer. Furthermore, a direction with a long diameter of the elliptical shape of the FFP can also be referred to as the direction of the fast axis of the semiconductor laser element 20, and a direction with a short diameter of the elliptical shape of the FFP can also be referred to as the direction of the slow axis of the semiconductor laser element 20.

[0045] Based on the light intensity distribution of the FFP, an angle is determined in which light with a light intensity of 1 / e 2 The divergence angle of light propagating from a peak light intensity is called the divergence angle of light from the semiconductor laser element 20. For example, a divergence angle of light can also be determined based on the light intensity that is half the peak light intensity, in addition to the determination based on the light intensity of 1 / e 2 of the peak light intensity. In this description, the term "divergence angle of light" refers to a scattering angle of light at a light intensity of 1 / e 2 of the peak light intensity. It should be noted that a divergence angle in the direction of the fast axis is larger than a divergence angle in the direction of the slow axis.

[0046] Examples of semiconductor laser elements 20 that emit blue light or green light include a semiconductor laser element containing a nitride semiconductor. The nitride semiconductor can be, for example, a GaN-based semiconductor such as GaN, InGaN, or AlGaN. Examples of semiconductor laser elements 20 that emit red light include a semiconductor laser element containing an InAlGaP-based semiconductor, a GaInP-based semiconductor, or a GaAs-based semiconductor such as GaAs or AlGaAs. Submount 30

[0047] The submount 30 has a top surface, a bottom surface, and one or more lateral surfaces. The top surface of the submount 30 can be described as a mounting surface 31 to which the other components are attached. The submount 30 includes the mounting surface 31 and a wiring pattern 32 arranged on the mounting surface 31 of the submount 30.

[0048] The submount 30 has an outer shape with a length in one direction (hereinafter referred to as the short-sided direction) that is less than a length in another direction (hereinafter referred to as the long-sided direction) that is orthogonal to the one direction in the top view. In the top view, the outer shape of the submount 30 is rectangular. The top surface of the submount 30 can have a rectangular shape with short sides and long sides. Note that the top surface can also have a square shape. In the illustrated submount 30, the short-sided direction is the same direction as the X-direction, and the long-sided direction is the same direction as the Y-direction.

[0049] The submount 30 can contain a substrate 33 and a first metal layer 34. The submount 30 can further contain a second metal layer 35. The first metal layer 34 is located on an upper surface of the substrate 33. The second metal layer 35 is located on a lower surface of the substrate 33.

[0050] One shape of the substrate 33, for example, is a rectangular cuboid having a length in the long direction that is greater than its width in the short direction. It should be noted that the shape need not necessarily be a cuboid. A shape of the first metal layer 34 can be a rectangle smaller than the substrate 33, with short sides and long sides in plan view. A shape of the second metal layer 35 can be a rectangle smaller than the substrate 33, with short sides and long sides in plan view.

[0051] Substrate 33 exhibits insulating properties. Substrate 33 is formed, for example, from silicon nitride, aluminum nitride, or silicon carbide. A ceramic material with relatively high heat dissipation can be selected as the main material of substrate 33.

[0052] The first metal layer 34 can be provided directly on the substrate 33 or indirectly via the intervening component. In the illustrated submount 30, the first metal layer 34 is provided directly on the substrate 33. The same applies to the second metal layer 35.

[0053] A metal such as copper or aluminum is used as the main material of the first metal layer 34 and the second metal layer 35. The first metal layer 34 has a height (thickness) in an upward / downward direction in the range of 30 µm to 200 µm. The first metal layer 34 is the thickest metal layer beneath one or more metal layers located above the substrate 33. The second metal layer 35 is the thickest metal layer beneath one or more metal layers located below the substrate 33.

[0054] The wiring pattern 32 is provided on the first metal layer 34. An upper surface of the wiring pattern 32 and an upper surface of the first metal layer 34 can form the mounting surface 31 of the submount 30. The height (thickness) of the wiring pattern 32 in the up / down direction is in the range of 300 nm to 3000 nm. The height (thickness) of the wiring pattern 32 in the up / down direction can be in the range of 300 nm to 1500 nm. The thickness of the wiring pattern 32 can be equal to or less than one-tenth the thickness of the first metal layer 34.

[0055] The wiring pattern 32 includes a first region 32A and a second region 32B connected to the first region 32A. The width of the first region 32A in a first direction on the mounting surface 31 is equal to or less than a predetermined value. Hereinafter, the predetermined value is referred to as the first value (first distance). The first direction can be the same as the short-side direction.

[0056] The first region 32A is provided on the mounting surface 31 with a predetermined length that is equal to or less than the first value in a second direction orthogonal to the first direction. Hereinafter, a value of the predetermined length is referred to as the second value (second distance). It can be said that the first region 32A is a region that has a width in the first direction equal to or less than the first value and a length in the second direction equal to the second value. The width in the first direction being equal to or less than the first value means that the width of the first region 32A in the first direction need not be constant. It should be noted that the width of the first region 32A in the first direction can be constant at the first value.In the depicted submount 30, the first region 32A can be a rectangular region, the first value can be a dimension corresponding to a short side of the rectangle, and the second value can be a dimension corresponding to a long side of the rectangle.

[0057] Since the second region 32B is connected to the first region 32A, there is a boundary B between the first region 32A and the second region 32B. Hereafter, each point on boundary B is referred to as a first position. The second region 32B is connected to the first region 32A at the first position. The first region 32A is a region that extends from the first position by the second value in the second direction. In other words, the distance between the first position and the distal end of the first region in the second direction is the second value (the second distance). In the depicted submount 30, the second direction is the same direction as the positive direction of Y.

[0058] The width of the second region 32B in the first direction is greater than the width of the first region 32A in the first direction in the first position. The maximum width of the second region 32B in the first direction on the mounting surface 31 is equal to or less than a predetermined value. Hereinafter, the predetermined value is referred to as the third value (third distance). It can be said that the third value is greater than the width of the first region 32A in the first direction in the first position. Furthermore, the third value is greater than the first value.

[0059] The second region 32B extends in the second direction from the first position toward an opposite side of the first region 32A with a length equal to or less than the third value. The second region 32B is located on an opposite side of the first region 32A with respect to the first position in the plan view. The second region 32B is provided on the mounting surface 31, with a predetermined length equal to or less than the third value in the second direction, toward the opposite side of the first region 32A. Hereinafter, a value of the predetermined length is referred to as the fourth value (fourth distance). The fourth value is less than the second value. It should be noted that the width of the second region 32B in the first direction can be constant at the third value.In the depicted submount 30, the second region 32B can be a rectangular region, the third value can be a dimension corresponding to a long side of the rectangle, and the fourth value can be a dimension corresponding to a short side of the rectangle. Furthermore, the direction opposite the first region 32A in the second direction is the same direction as the negative direction of Y.

[0060] An outer edge of the first metal layer 34 is located within an outer edge of the substrate 33. In this case, the upper surface of the submount 30 includes not only the upper surface of the first metal layer 34 and the upper surface of the wiring pattern 32, which form the mounting surface 31, but also the upper surface of the substrate 33. To distinguish the upper surfaces of the submount 30, the upper surface forming the mounting surface 31 can be referred to as a first upper surface of the submount 30, and an upper surface that intersects an outer edge of the submount 30 in plan view can be referred to as a second upper surface of the submount 30. It should be noted that in the case of a submount where a mounting surface intersects an outer edge of the submount in plan view, a first upper surface and a second upper surface refer to the same upper surface.

[0061] In the plan view, a portion (hereinafter referred to as the first outer edge region) of an outer edge of the wiring pattern 32 is located near an outer edge of the mounting surface 31 of the submount 30. It should be noted that proximity can be defined here as being located within 10 µm (inclusive). In the plan view, the first outer edge region of the wiring pattern 32 is located near the outer edge of the upper surface of the submount 30. It should be noted that proximity can be defined here as being located within 50 µm (inclusive). The first outer edge region is contained in the first region 32A.

[0062] In the plan view, another part (hereinafter referred to as the second outer edge region) of the outer edge of the wiring pattern 32 is located near the outer edge of the mounting surface 31 of the submount 30. It should be noted that proximity can be defined here as being located within 10 µm (inclusive). In the plan view, the second outer edge region of the wiring pattern 32 is located near the outer edge of the upper surface of the submount 30. It should be noted that proximity can be defined here as being located within 50 µm (inclusive). The second outer edge region is contained in the second region 32B.

[0063] For example, the length of submount 30 in the short-side direction ranges from 700 µm to 900 µm. The length of submount 30 in the long-side direction ranges from 1400 µm to 1850 µm. The difference between the length of submount 30 in the long-side direction and the length in the short-side direction ranges from 600 µm to 1050 µm.

[0064] For example, the length of the first region 32A in the first direction lies in the range of 200 µm to 400 µm. The length of the first region 32A in the second direction lies in the range of 1000 µm to 1300 µm. The length of the second region 32B in the first direction lies in the range of 400 µm to 600 µm. The length of the second region 32B in the second direction lies in the range of 200 µm to 400 µm.

[0065] The distance from the outer edge of the mounting surface 31, located near the first outer edge region, to the outer edge of the upper surface of the submount 30 can be in the range of 0 µm to 100 µm. Alternatively, the distance can be in the range of 0 µm to 70 µm. Alternatively, the distance can be in the range of 0 µm to 50 µm.

[0066] For example, the length of wiring pattern 32 in the second direction can be in a range of 85% to 100% of the length of submount 30 in the second direction. The length of the first region 32A in the first direction can be in a range of 20% to 50% of the length of submount 30 in the first direction. The length of the second region 32B in the first direction can be in a range of 55% to 85% of the length of submount 30 in the first direction. The difference between the length of the second region 32B in the first direction and the length of the first region 32A in the first direction can be in a range of 15% to 45% of the length of submount 30 in the first direction.

[0067] As shown in the drawings, the wiring pattern 32 has an L-shape in the top view. It should be noted that the L-shape can be a shape created by inverting the L. One of the two rod-shaped forms that make up the L-shape can be a shape of the first region 32A, and the other rod-shaped form can be a shape of the second region 32B. A straight line running parallel to the first direction, which can divide the L-shape into the two rod-shaped forms, is the boundary B between the first region 32A and the second region 32B.

[0068] The wiring pattern 32 can be formed from a metal. For example, the wiring pattern 32 can be formed by applying AuSn solder (a metal layer of AuSn) to a metal layer of Ti / Pt / Au (layered in the order Ti, Pt, and Au from the upper surface of the submount 30). It should be noted that the configuration of the wiring pattern 32 is not limited to this. Reflective component 40

[0069] The reflective component 40 comprises a lower surface and a light-reflecting surface that reflects light. The light-reflecting surface is inclined relative to the lower surface. In other words, the light-reflecting surface, when viewed along the lower surface, is neither orthogonal nor parallel in any arrangement relationship. A straight line connecting a lower end and an upper end of the light-reflecting surface is inclined relative to the lower surface of the reflective component 40. The angle of the light-reflecting surface with respect to the lower surface, or the angle of the straight line connecting the lower end and the upper end of the light-reflecting surface with respect to the lower surface, is referred to as the inclination angle of the light-reflecting surface.

[0070] In the illustrated reflective component 40, the light-reflecting surface is flat and forms an angle of inclination of 45 degrees with respect to the lower surface of the reflective component 40. It should be noted that the light-reflecting surface is not limited to a flat surface, but can also be, for example, a curved surface. Furthermore, the light-reflecting surface can have an angle of inclination other than 45 degrees.

[0071] For the reflective component 40, glass, metal, or the like can be used as the main material. A heat-resistant material is preferred for the main material, and examples include glass such as quartz or BK7 (borosilicate glass) or a metal such as aluminum. The reflective component 40 can also be formed using silicon as the main material. If the main material is a reflective material, the light-reflecting surface can be formed from the main material. If the light-reflecting surface is formed from a material different from the main material, it can be formed, for example, using a metal such as silver or aluminum, or a dielectric multilayer film such as Ta₂O₅ / SiO₂, TiO₂ / SiO₂, and Nb₂O₅ / SiO₂.

[0072] For a light-reflecting surface, the reflectance for the peak wavelength of the light incident on the surface is equal to or greater than 90%. The reflectance can be equal to or greater than 95%. The reflectance can be equal to or greater than 99%. The light reflectance is equal to or less than 100%, or it is less than 100%. Protective element 50

[0073] The protective element 50 prevents damage to a specific element (e.g., the semiconductor laser element) due to excessive current flow through the element. The protective element 50 is, for example, a Zener diode. Furthermore, a Zener diode made of silicon can be used as the Zener diode. Cover component 60

[0074] The cover component 60 has a lower surface and an upper surface and is formed in a flat, plate-like, rectangular parallelepiped shape. It should be noted that the shape of the cover component 60 does not have to be a rectangular parallelepiped. The cover component 60 has a transmittance that allows light to pass through. Here, "have a transmittance" means that the transmittance is equal to or greater than 80%. It should be noted that the transmittance does not have to be equal to or greater than 80% with respect to all wavelengths. The cover component 60 may partially contain a non-transparent region (a region that has no transmittance).

[0075] The cover component 60 is formed using glass as a primary material. This primary material is one with high permeability. However, the cover component 60 is not limited to glass and can, for example, be formed using sapphire as the primary material. Lens component 70

[0076] The lens component 70 comprises a top surface, a bottom surface, and a lateral surface. The lens component 70 provides an optical effect for the incident light, such as condensation, diffusion, and collimation, and the light resulting from this optical effect is emitted by the lens component 70.

[0077] The lens component 70 contains one or more lens surfaces. The one or more lens surfaces are located on the upper surface of the lens component 70. It should be noted that the one or more lens surfaces may also be located on the lower surface of the lens component 70. Both the upper and lower surfaces are flat. The one or more lens surfaces intersect the upper surface. In plan view, the one or more lens surfaces are surrounded by the upper surface. In plan view, the lens component 70 has a rectangular outer shape. The lower surface of the lens component 70 is rectangular.

[0078] Of the lens component 70, a region that overlaps one or more lens surfaces is a lens region, and a region that does not overlap one or more lens surfaces is a non-lens region in the top view. In the lens component 70, a region that overlaps the top surface in the top view is included in the non-lens region. A lens surface side is a lens-shaped region when the lens region is divided into two imaginary planes containing the top surface, and a bottom surface side is a flat, plate-shaped region. The bottom surface of the lens component 70 is formed from a bottom surface of the lens region and a bottom surface of the non-lens region.

[0079] The one or more lens surfaces of the lens component 70 are formed continuously in one direction. In other words, the one or more lens surfaces are arranged such that the lens surfaces are connected to each other and oriented in the same direction. The lens component 70 is formed such that a vertex of each of the lens surfaces is located on an imaginary straight line. In the illustrated lens component 70, the imaginary straight line lies in the same direction as the X-direction.

[0080] Here, in the top view, the direction in which the majority of lens surfaces are aligned is referred to as the coupling direction. The length of the majority of lens surfaces in the coupling direction is greater than the length in a direction orthogonal to the coupling direction in the top view. In the illustrated lens component 70, the coupling direction is the same direction as the X-direction.

[0081] The lens component 70 exhibits permeability. The lens component 70 exhibits permeability in both the lens and non-lens areas. The lens component 70 can be formed using glass, such as BK7.

[0082] Next, the light-emitting device 100 will be described. Light-emitting device 100

[0083] In the light-emitting device 100, one or more semiconductor laser elements 20 are arranged on the base 10. The one or more semiconductor laser elements 20 are arranged on the mounting surface 11D of the base 10. The one or more semiconductor laser elements 20 are sealed within a packing. The packing forms a sealed space, which constitutes an interior in which the semiconductor laser element 20 is arranged. The packing can be formed by connecting the cover component 60 to the base 10.

[0084] The semiconductor laser element 20 is mounted on the submount 30. The semiconductor laser element 20 is mounted via the submount 30 on the mounting surface 11D of the base 10. The lower surface of the submount 30 is connected to the base 10. The second metal layer 35 of the submount 30 is connected to the base 10.

[0085] The semiconductor laser element 20 is arranged on the wiring pattern 32 of the submount 30. The semiconductor laser element 20 is located in the first region 32A of the wiring pattern 32. The semiconductor laser element 20 is positioned such that the light-emitting surfaces are parallel to each other in the first direction. It should be noted that the term "parallel" here allows a difference of ± 5°. The semiconductor laser element 20 is connected to the wiring pattern 32 via a bonding material such as AuSn solder provided on the wiring pattern 32. For example, the semiconductor laser element 20 can be connected to the wiring pattern 32 using a eutectic reaction between the AuSn solder of the wiring pattern 32 and an Au metal foil provided on the semiconductor laser element 20.

[0086] The semiconductor laser element 20 can be arranged such that its light-emitting surface protrudes from the mounting surface 31 of the submount 30. The length of the region of the light-emitting surface of the semiconductor laser element 20 that protrudes from the mounting surface 31 of the submount 30 can be equal to or less than 30 µm. If the protruding length increases, the heat dissipation power of the submount 30 may be insufficient with respect to the heat generated by the light-emitting surface of the semiconductor laser element 20. Preferably, the length can be equal to or less than 20 µm.

[0087] The light-emitting surface of the semiconductor laser element 20 can be positioned between the outer edge of the mounting surface 31 and the outer edge of the upper surface of the submount 30 in the top view. In this way, the semiconductor laser element 20 does not protrude from the submount 30 in the top view, thus reducing the mounting area requiring securing in the second direction. Furthermore, the semiconductor laser element 20 can be positioned such that a major portion of the light emitted by the semiconductor laser element 20 does not fall on the upper surface of the submount 30, taking into account the heat dissipation of the semiconductor laser element 20.

[0088] The width of the first region 32A in the first direction is greater than the width of the semiconductor laser element 20 in the first direction. Specifically, the width of the first region 32A in the first direction is more than 100 µm greater than the width of the semiconductor laser element 20 in the first direction. This allows the semiconductor laser element 20 to be stably connected to the wiring pattern 32. It should be noted that the width of the first region 32A in the first direction is preferably equal to or less than the value obtained by adding 200 µm to the width of the semiconductor laser element 20 in the first direction. By reducing the size of the wiring pattern 32, a larger mounting area for the other components can be ensured.

[0089] In a top view, one end of the width of the first region 32A is located more than 50 µm and 100 µm or less away from a lateral surface closer to one end of the two lateral surfaces intersecting the light-emitting surface of the semiconductor laser element 20, and the other end is located more than 50 µm and 100 µm or less away from a lateral surface closer to the other end. In this way, the semiconductor laser element 20 can be stably connected to the wiring pattern 32. Furthermore, the center of the width of the first region 32A and the center of the width of the semiconductor laser element 20 can coincide in the first direction.

[0090] The length (second value) of the first region 32A in the second direction is equal to or greater than a value obtained by subtracting the length of a region of the light-emitting surface of the semiconductor laser element 20, which projects from the mounting surface 31 in the top view, from the length of the semiconductor laser element 20 in the second direction. Furthermore, the second value can be equal to or less than a value obtained by adding 50 µm to the value obtained by subtracting the length of the region of the light-emitting surface of the semiconductor laser element 20, which projects from the mounting surface 31 in the top view, from the length of the semiconductor laser element 20 in the second direction.Based on the length of the semiconductor laser element 20 in the second direction, the length of the first region 32A in the second direction is not sufficiently long, so the length of the submount 30 in the second direction can be reduced. It should be noted that the second value can be equal to or less than the length of the semiconductor laser element 20 in the second direction. In other words, the semiconductor laser element 20 can be positioned so that the boundary B passes through it in the top view.

[0091] Here, a lateral surface of the first metal layer 34, located near the light-emitting surface of the semiconductor laser element 20, is referred to as a first lateral surface 34A of the first metal layer 34. A lateral surface of the first metal layer 34 on a side opposite the first lateral surface 34A is referred to as a second lateral surface 34B of the first metal layer 34. Furthermore, a lateral surface of the substrate 33, located near the light-emitting surface, is referred to as a first lateral surface 33A of the substrate 33. A lateral surface of the substrate 33 on a side opposite the first lateral surface 33A is referred to as a second lateral surface 33B of the substrate 33.It should be noted that a first lateral surface and a second lateral surface of the submount 30 are referred to as the first lateral surface 33A and the second lateral surface 33B of the substrate 33, regardless of whether the submount 30 contains the first metal layer or not.

[0092] The first lateral surface 33A and the second lateral surface 33B of the substrate 33 are lateral surfaces extending in the top view along the short-side direction of the submount 30. The first lateral surface 34A and the second lateral surface 34B of the first metal layer 34 are lateral surfaces extending in the top view along the short-side direction of the submount 30. The semiconductor laser element 20 arranged on the submount 30 has a length in the second direction that is greater than its width in the first direction.

[0093] The first outer edge region of the wiring pattern 32 is located in the top view near the first lateral surface 34A of the first metal layer 34. The first outer edge region of the wiring pattern 32 is located in the top view near the first lateral surface of the submount 30. The first outer edge region of the wiring pattern 32 is located in the top view near the light-emitting surface of the semiconductor laser element 20. The light-emitting surface of the semiconductor laser element 20 is parallel to the first lateral surface of the submount 30.

[0094] In plan view, the second outer edge region of the wiring pattern 32 includes a first region located near the second lateral surface 34B of the first metal layer 34, and a second region located near the lateral surface of the first metal layer 34 that intersects the second lateral surface 34B. In plan view, the second outer edge region of the wiring pattern 32 includes a first region located near the second lateral surface of the submount 30, and a second region located near the lateral surface that intersects the second lateral surface of the submount 30. The length of the first region in the first direction can be equal to the third value. The length of the second region in the second direction can be the fourth value.

[0095] In the light-emitting device 100, one or more protective elements 50 are arranged on the mounting surface 11D. The one or more protective elements 50 are sealed in a package. The protective element 50 is attached to the submount 30. The protective element 50 is attached to the mounting surface 11D via the submount 30.

[0096] The protective element 50 is arranged on the wiring pattern 32 of the submount 30. The protective element 50 is located in the second region 32B of the wiring pattern 32. In the top view, an imaginary line parallel to the first direction passes through the protective element 50 but not through the semiconductor laser element 20, which is arranged on the submount 30 together with the protective element 50.

[0097] In the semiconductor laser element 20 and the protective element 50 arranged on the submount 30, the width in the first direction of the protective element 50 is greater than that of the semiconductor laser element 20. Furthermore, the length in the second direction of the protective element 50 is smaller than that of the semiconductor laser element 20.

[0098] An interval in the second direction between the semiconductor laser element 20 and the protective element 50, which is arranged on the submount 30, is greater than 0 µm and less than 170 µm. The smaller interval can reduce a mounting region in the second direction required for arranging the semiconductor laser element 20 and the protective element 50. Therefore, the interval is particularly preferably greater than 0 µm and 120 µm or less. Furthermore, the interval is particularly preferably greater than 0 µm and 100 µm or less. Furthermore, the interval is particularly preferably greater than 0 µm and 80 µm or less.

[0099] If the semiconductor laser element 20 and the protective element 50 are in contact, there is a risk that they will conduct at an unintended point. Theoretically, the semiconductor laser element 20 and the protective element 50 can be brought extremely close to each other as long as contact is avoided. However, to facilitate the determination of whether contact is occurring, the interval in the second direction between the semiconductor laser element 20 and the protective element 50, which is arranged on the submount 30, can be equal to or greater than 50 µm. Therefore, the interval can be 50 µm or more and less than 170 µm. The interval can be in the range of 50 µm to 120 µm. The interval can be in the range of 50 µm to 100 µm. The interval can be in the range of 50 µm to 80 µm.

[0100] Here, the explanation of connecting the semiconductor laser element 20 is supplemented. When the semiconductor laser element is connected to the submount or the like, a sufficient connection strength is required so that the semiconductor laser element does not easily fall off due to vibration or the like during subsequent use of the light-emitting device. Furthermore, the suitability of a connection can be determined not only from the perspective of achieving sufficient connection strength to prevent the semiconductor laser element from easily falling off, but also from the perspective of heat dissipation with respect to the semiconductor laser element. In the semiconductor laser element, the main light is emitted from the light-emitting surface, and a portion of the light is also emitted from a surface on a side opposite the light-emitting surface.Thus, the heat generated in the semiconductor laser element is concentrated on the light-emitting surface and the surface on the opposite side. Therefore, when determining the quality of a junction state from the perspective of heat dissipation, a junction state located near the light-emitting surface and near the surface on the opposite side is an important factor.

[0101] For example, when a metal foil made of Au is joined using AuSn solder, an insufficient eutectic response leads to a reduction in heat dissipation. It was subsequently determined experimentally that the eutectic response becomes insufficient when the distance from the semiconductor laser element to the outer edge of the wiring pattern is too short. In particular, the eutectic response is sometimes insufficient when a connection state is confirmed after the semiconductor laser element is connected to a wiring pattern with a distance of 50 µm. Although it is undesirable for the light-emitting surface of the semiconductor laser element 20 to be located at a distance greater than 50 µm for another reason, the distance from the surface on the side opposite the light-emitting surface to the outer edge of the wiring pattern is therefore preferably greater than 50 µm.Therefore, as in the . Fig. 11 and Fig. 12, the conclusion is drawn that the interval in the second direction between the semiconductor laser element 20 and the protective element 50 is properly equal to or greater than 170 µm when a wiring pattern 39 on which the semiconductor laser element 20 is arranged and the wiring pattern 39 on which the protective element 50 is arranged are provided separately.

[0102] It should be noted that, as described above, the Fig. 11 and Fig. 12 do not belong to the prior art and are merely an example of considering a reduction in the size of the submount in the second direction by a form of separate provision of the wiring pattern 39. In other words, the conclusion that the interval in the second direction between the semiconductor laser element 20 and the protection element 50 in the case of Fig. 11 and Fig. The fact that 12 is preferably equal to or greater than 170 µm does not mean that a technical limit between the related prior art and the present embodiment is 170 µm. Therefore, it is also noted that the present application is not the invention in which an insufficient eutectic response is a significant problem.

[0103] In contrast to the submount in Fig. In the submount 30, the semiconductor laser element 20 and the protective element 50 are arranged on a wiring pattern 32, and the semiconductor laser element 20 and the protective element 50 are separated from each other in the second direction, such that the distance from the surface on the side opposite the light-emitting surface of the semiconductor laser element 20 to the outer edge of the wiring pattern 32 can be ensured to be greater than 50 µm. It should be noted that the length of the protective element 50 in the second direction is equal to or greater than 50 µm. To prevent a mounting region from becoming too small, the length of the protective element 50 in the second direction is preferably equal to or less than 300 µm. Likewise, the length of the protective element 50 in the first direction is preferably equal to or less than 300 µm.

[0104] An interval in the first direction between the semiconductor laser element 20 and the protective element 50, which is arranged on the submount 30, lies in a range of 0 µm to 100 µm. The smaller interval can reduce the mounting region in the first direction required for arranging the semiconductor laser element 20 and the protective element 50. The interval preferably lies in a range of 0 µm to 50 µm. It should be noted that the 0 µm interval includes not only a state in which a straight line connecting an endpoint of the semiconductor laser element 20 on the side of the protective element 50 and an endpoint of the protective element 50 on the side of the semiconductor laser element 20 is parallel to the second direction, but also a state in which an imaginary line passing through the semiconductor laser element 20 and the protective element 50 parallel to the second direction exists.

[0105] The protective element 50 is positioned so that it is not traversed by an imaginary line L1 parallel to the second direction and passing through an emission point (light emission point) of light emitted from the light emission surface of the semiconductor laser element 20 in the top view. This arrangement prevents light emitted from the surface on the side opposite the light emission surface of the semiconductor laser element 20 from being reflected by the lateral surface of the protective element 50 and returning to the semiconductor laser element 20. In the light-emitting device 100, the semiconductor laser element 20 and the protective element 50 can be arranged such that the interval in the first direction between the semiconductor laser element 20 and the protective element 50, which is mounted on the submount 30, exceeds 0 µm.In this way, the effect of suppressing returning light can be further increased.

[0106] It should be noted that, as in Fig. 13 and Fig. As shown in Figure 14, the protective element 50 can be arranged in a position traversed by the imaginary line L1, which runs parallel to the second direction and passes through the light-emitting point of the light-emitting surface of the semiconductor laser element 20 in the top view. In the first direction, both ends of the semiconductor laser element 20 can be located between the two ends of the protective element 50. In a side view along the second direction, the light-emitting surface and the surface on the side opposite the light-emitting surface of the semiconductor laser element 20 can be contained within the lateral surface of the protective element 50. In this way, the width in the first direction of a mounting region for securing the semiconductor laser element 20 and the protective element 50 can be reduced.It should be noted that if the semiconductor laser element 20 and the protective element 50 are arranged in such a manner, a protrusion of a connecting material between the surface on the side opposite the light emission surface of the semiconductor laser element 20 and the lateral surface of the protective element 50 is affected, but as a result of an experiment, such a protrusion that a current leak occurs was not confirmed.

[0107] The protective element 50 is positioned along an imaginary line L2. The imaginary line L2 passes through a point P (first point) and is parallel to the second direction. At point P, an outer edge of the first region 32A, extending in the second direction, intersects with an outer edge of the second region 32B, extending in the first direction, and point P intersects boundary B. This reduces the size of the mounting region required for securing the semiconductor laser element 20 and the protective element 50, and also reduces the size of the first region 32A of the wiring pattern 32.

[0108] The protective element 50 is positioned at a distance of 100 µm from the first region of the second outer edge region of the submount 30. The protective element 50 can be positioned at a distance of 50 µm from the first region of the second outer edge region of the submount 30. The protective element 50 can be positioned at a distance of 100 µm or less from the second lateral surface of the submount 30. In this way, the length of the submount 30 can be reduced in the second direction. The protective element 50 is positioned at a distance of 100 µm from the second region of the second outer edge region of the submount 30. In this way, the length of the submount 30 can be reduced in the first direction.

[0109] The interval in the second direction between the semiconductor laser element 20 and the protective element 50 arranged on the submount 30 can be smaller than the distance from the protective element 50 to the second lateral surface of the submount 30. The difference between the interval in the second direction between the semiconductor laser element 20 and the protective element 50 arranged on the submount 30, and the distance from the protective element 50 to the second lateral surface of the submount 30, can be equal to or less than 30 µm. In this way, the length of the submount 30 in the second direction can be reduced.

[0110] In the top view, the protective element 50 is arranged such that the lateral surface facing the first region of the second outer edge region of the submount 30 is parallel to the first region. In the top view, the protective element 50 is arranged such that the lateral surface facing the second region of the second outer edge region of the submount 30 is parallel to the second region. It should be noted that the term "parallel" here allows a difference of ± 10°.

[0111] In the light-emitting device 100, one or more semiconductor laser elements 20 are arranged differently from one another on the submounts 30. Furthermore, one or more protective elements 50 are arranged differently from one another on the submounts 30. The number of semiconductor laser elements 20 arranged on each submount 30 is one, and the number of protective elements 50 arranged on each submount 30 is equal to or less than one. The protective element 50 need not be arranged on all submounts 30 on which the semiconductor laser element 20 is arranged. In the illustrated light-emitting device 100, the protective element 50 is arranged on all submounts 30 on which the semiconductor laser element 20 is arranged.

[0112] The light-emitting device 100 can contain a plurality of semiconductor laser elements 20. Furthermore, the plurality of semiconductor laser elements 20 can be arranged side by side. If the submount 30 on which the semiconductor laser element 20 is arranged is a chip on a submount (CoS), a plurality of CoS can be arranged side by side in the first direction within the light-emitting device 100. The protective element 50 is arranged in each of the plurality of CoSs that are aligned in the first direction. The plurality of submounts 30 are attached to the mounting surface 11D of the base 10.

[0113] Each of the majority of semiconductor laser elements 20 emits light in the second direction. Light from the FFP with a direction orthogonal to the mounting surface 11D as the fast axis direction is emitted from each of the light-emitting surfaces of the majority of semiconductor laser elements 20. All semiconductor laser elements 20 exhibit a divergence angle of 20 degrees or less in a slow axis direction. It should be noted that the divergence angle is an angle greater than 0 degrees.

[0114] In the light-emitting device 100, where the majority of CoS are arranged side by side in the first direction, it may be more desirable to reduce the size of the submount 30 in the first direction than in the second direction. This is because it is possible to increase the number of CoS that can be arranged side by side by reducing the width of the submount 30 relative to a mounting region that has the same width in the first direction. By positioning the semiconductor laser element 20 and the protective element 50 further apart from each other on the submount 30 in the second direction, the width in the first direction can be easily reduced.

[0115] Furthermore, if the number of CoSs that can be arranged side by side is large, a reduction in the size per submount 30 also has a significant impact on increasing the number of CoSs that can be arranged. For example, in the light-emitting device 100, four or more CoSs are preferably arranged side by side in the first direction. The illustrated light-emitting device 100 is an example of a light-emitting device in which five or more CoSs are arranged side by side in the first direction.

[0116] In the light-emitting device 100, one or more of the reflective components 40 are arranged on the base 10. Each of the reflective components 40 is arranged on the mounting surface 11D. Light emitted by the one or more semiconductor laser elements 20 is reflected by the light-reflecting surface of the one or more reflective components 40. The light-reflecting surface is inclined at an angle of 45 degrees to the direction of travel of light passing along an optical axis. The light reflected by the light-reflecting surface travels upwards.

[0117] The reflective component 40 can be arranged in a one-to-one relationship with the semiconductor laser element 20. In other words, the number of reflective components 40 can be the same as the number of semiconductor laser elements 20. In the light-emitting device 100, the majority of the reflective components 40 can be arranged side by side in the first direction in the top view. All reflective components 40 have the same size and shape.

[0118] The light-reflecting surface of the reflective component 40 reflects 90% or more of a major range of applied light. It should be noted that a reflective component 40 can be provided for the majority of the semiconductor laser elements 20. Alternatively, the light-emitting device 100 may not include the reflective component 40.

[0119] In the light-emitting device 100, the cover component 60 is connected to the base 10. The cover component 60 is located on the upper surface 11A of the base 10. Furthermore, the cover component 60 is located above the stepped area 12C. Because the cover component 60 is connected to the base 10, a closed space is formed, defined by the base 10 and the cover component 60. This space is the space in which the semiconductor laser element 20 is located.

[0120] By connecting the cover component 60 to the base 10 under a predetermined atmosphere, a hermetically sealed enclosed space (sealed chamber) is created. By hermetically sealing the chamber in which the semiconductor laser element 20 is located, degradation due to dust accumulation can be suppressed. The cover component 60 has a transmittance with respect to the light emitted by the semiconductor laser element 20. 90% or more of a major range of the light emitted by the semiconductor laser element 20 is emitted to the outside through the cover component 60.

[0121] In the light-emitting device 100, the lens component 70 is fixed to a packing. The lens component 70 is arranged above the cover component 60. The lens component 70 is connected to the cover component 60. Light emitted by each of the plurality of semiconductor laser elements 20 is emitted by the packing and incidents on the lens component 70. The light transmitted through the cover component 60 incidents on an incident surface of the lens component 70. The light incident on the surface of the lens component 70 is emitted by the lens surface.

[0122] The lens assembly 70 contains the same number of lens surfaces as the number of one or more semiconductor laser elements 20. Each of the lens surfaces of the lens assembly 70 corresponds to a different semiconductor laser element 20, and light emitted by the semiconductor laser element 20 passes through the corresponding lens surface. A major portion of the light emitted by each of the semiconductor laser elements 20 passes through a different lens surface and is emitted by the lens assembly 70. The light incident on the lens assembly 70 is emitted by the lens assembly 70, for example, as collimated light. Second embodiment

[0123] Next, a light-emitting module 200 according to a second embodiment is described. Fig. Figures 15 to 17 are drawings that illustrate an exemplary design of the light-emitting module 200. Since the light-emitting module 200 contains the light-emitting device 100, it can also be said that Fig. Drawings 1 to 14 depict the light-emitting module 200. Fig. Figure 15 is a perspective view of the light-emitting module 200. Fig. Figure 16 is a top view of the light-emitting module 200. Fig. Figure 17 is a top view showing each component arranged in the light-emitting device contained in the light-emitting module 200.

[0124] The light-emitting module 200 contains a plurality of components. The plurality of components contained in the light-emitting module 200 includes the light-emitting device 100 (hereinafter referred to as the first light-emitting device 100), a second light-emitting device 101, a wiring substrate 80, and a connector 90. It should be noted that the light-emitting module 200 may contain a component other than the plurality of components described above, or it may not contain some components.

[0125] In order to distinguish components that have common names for the first light-emitting device 100 and the second light-emitting device 101, the components of the first light-emitting device 100 are designated as "first" and the components of the second light-emitting device 101 as "second".

[0126] The second light-emitting device 101 contains a plurality of components. The plurality of components contained in the second light-emitting device 101 comprise a second base 10, one or a plurality of second semiconductor laser elements 20, one or a plurality of second submounts 30, one or a plurality of second reflective components 40, one or a plurality of second protective components 50, a second cover component 60, and a second lens component 70.

[0127] All descriptions relating to the light-emitting device 100 and each of the components according to the first embodiment described above also apply to the description of the second light-emitting device 101, except for descriptions where it can be said that certain contents are inconsistent with the second light-emitting device 101 disclosed in the drawings and the following description according to the light-emitting module 200. Any contents that do not contradict the previously described contents are not described again to avoid repetition. Light-emitting module 200

[0128] In the light-emitting module 200, the first light-emitting device 100 and the second light-emitting device 101 are mounted on the wiring substrate 80. The first light-emitting device 100 contains a first packing, and the second light-emitting device 101 contains a second packing. Furthermore, the first packing and the second packing are each connected to the wiring substrate 80. Both the first packing and the second packing can be formed by connecting the cover component 60 to the base 10.

[0129] The first packing of the first light-emitting device 100 and the second packing of the second light-emitting device 101 have the same external shape. It should be noted that the fact that a smallest rectangle containing the first packing and a smallest rectangle containing the second packing have the same shape in plan view, and that the first packing and the second packing have the same height, may be included in one interpretation of "the same external shape of the first packing and the second packing".

[0130] An area of ​​a first mounting surface 11D of the first light-emitting device 100 lies within a range of 90% to 110% of an area of ​​a second mounting surface 11D of the second light-emitting device 101. The area of ​​the first mounting surface 11D can be the same as the area of ​​the second mounting surface 11D. The first mounting surface 11D and the second mounting surface 11D can have the same shape.

[0131] The first light-emitting device 100 contains a plurality of first semiconductor laser elements 20. Furthermore, the plurality of first semiconductor laser elements 20 contains the semiconductor laser element 20 which is arranged on the submount 30 according to the first embodiment.

[0132] The first light-emitting device 100 comprises a plurality of first submounts 30. The plurality of first submounts 30 comprises the submount 30 according to the first embodiment. The first semiconductor laser element 20 is arranged on each of the plurality of first submounts 30. All of the plurality of first semiconductor laser elements 20 can be the semiconductor laser element 20 arranged on the submount 30 according to the first embodiment.

[0133] The second light-emitting device 101 contains one or more second semiconductor laser elements 20. The number of second semiconductor laser elements 20 contained in the second light-emitting device 101 is one or more fewer than the number of first semiconductor laser elements 20 contained in the first light-emitting device 100. It should be noted that the first light-emitting device 100 contains no other semiconductor laser element 20 than the majority of first semiconductor laser elements 20. The second light-emitting device 101 contains no other semiconductor laser element 20 than the one or more second semiconductor laser elements 20.

[0134] The second light-emitting device 101 includes one or more second submounts 30. All of the one or more second submounts 30 have a shape that differs from that of the submount 30 according to the first embodiment. The second semiconductor laser element 20 is arranged on each of the one or more second submounts 30.

[0135] In a top view, the length of the second submount 30 in a direction parallel to a light-emitting surface of the second semiconductor laser element 20 is greater than the length of the first submount 30 in a direction parallel to a light-emitting surface of the first semiconductor laser element 20. The difference between the length of the second submount 30 in the direction parallel to the light-emitting surface of the second semiconductor laser element 20 and the length of the first submount 30 in the direction parallel to the light-emitting surface of the first semiconductor laser element 20 can be in the range of 70 µm to 190 µm.

[0136] Each of the plurality of first semiconductor laser elements 20 emits light (hereinafter referred to as first light) of a first color. It should be noted that the plurality of first semiconductor laser elements 20 may include the semiconductor laser element 20 that emits light of a different color than that of the first light. The first color is, for example, blue. It should be noted that the first color does not have to be blue.

[0137] The one or more second semiconductor laser elements 20 contain the semiconductor laser element 20 that emits light (hereinafter referred to as the second light) of a second color. The second light is light of a different color than the first light. Furthermore, the second light can have a color that differs from the color of the light emitted by all or the majority of the first semiconductor laser elements 20. The second color is, for example, red. It should be noted that the second color does not have to be red.

[0138] Red, green and blue light can be emitted by the first light-emitting device 100 and the second light-emitting device 101.

[0139] In the top view, the width of the light emission surface of the second semiconductor laser element 20 in the first direction is greater than the width of the light emission surface of the first semiconductor laser element 20. In this way, the widths of the light emission surfaces differ from each other, and therefore the first submount 30, on which the first semiconductor laser element 20 is arranged, and the second submount, on which the second semiconductor laser element 20 is arranged, can have different shapes.

[0140] Based on the illustrated light-emitting module 200, if the first semiconductor laser element 20 and the second semiconductor laser element 20 are arranged on submounts of the same shape, the number of semiconductor laser elements 20 contained in each of the first light-emitting device 100 and the second light-emitting device 101 is four. Furthermore, the light-emitting module 200 uses the first submount 30 for the first light-emitting device 100, which can be arranged in five rows side by side, instead of the second submount 30, which can only be arranged in four rows side by side. In this way, by reducing one mounting region per submount in the first direction, the number of mounting regions required to arrange the majority of submounts can be reduced, and a greater number of submounts can be aligned.

[0141] On the other hand, as a result of arranging the protective element 50 and the semiconductor laser element 20 away from each other in the second direction to reduce the mounting region in the first direction, the mounting region in the second direction becomes larger. When the mounting area increases in the second direction, the interval between an inner lateral surface 11E of the base 10 and the submount 30 becomes narrow, and mounting can become difficult. Therefore, it is also desirable to minimize the length so that the size of the submount 30 does not increase excessively in the second direction. The submount 30 and the light-emitting device 100 according to the first embodiment, as well as the light-emitting module 200 that properly utilizes the submount 30, constitute an effective configuration for this purpose.

[0142] In the second light-emitting device 101, the second protective element 50 is attached to the second packing. The second protective element 50 is located on an upper surface of a stepped region 12C of the base 10 of the second packing. In the second light-emitting device 101, the second protective element 50 is not located on the second submount 30. In other words, the second protective element 50 is not located on any of the plurality of second submounts 30. Unlike the submount 30 according to the first embodiment, a wiring pattern in the second submount 30 does not have a shape that includes the first region 32A and the second region 32B. For example, the second semiconductor laser element 20 is located on a rectangular wiring pattern provided on the second submount 30.

[0143] In the light-emitting module 200, the first light-emitting device 100 and the second light-emitting device 101 are arranged side by side. The orientation of the first light-emitting device 100 and the second light-emitting device 101 is orthogonal to the orientation of the majority of the first semiconductor laser elements 20 in the first light-emitting device 100. By using packings with the same external shape, the size of the wiring substrate 80 can be reduced.

[0144] In the light-emitting module 200, the connector 90, which is electrically connected to the first light-emitting device 100 and the second light-emitting device 101, is attached to the wiring substrate 80. In this way, a power supply to the first light-emitting device 100 and the second light-emitting device 101 can be easily carried out.

[0145] Although each embodiment of the present invention has been described above, the light-emitting device and the light-emitting module according to the present invention are not strictly limited to the light-emitting device and the attached component in each embodiment. In other words, the present invention can be obtained without being limited to an external shape or structure of the light-emitting device and the light-emitting module disclosed in each embodiment. The present invention can be applied without all components needing to be adequately provided. For example, in a case where some of the components of the light-emitting device and the light-emitting module disclosed by the embodiments are not specified within the scope of the claims, the degree of freedom in design by the person skilled in the art, such as...Substitutions, omissions, modifications of form and material changes for these components are permitted, and then the invention, which is specified in the scope of the claims and applied to these components, is specified.

Claims

[1] Light-emitting device (100), comprising: a submount (30) having a mounting surface (31), wherein the submount (30) includes a wiring pattern (32) arranged on the mounting surface (31), the wiring pattern (32) comprising a first region (32A) and a second region (32B) connected to the first region (32A) at a first position on the mounting surface (31); a semiconductor laser element (20) arranged on the first region (32A) of the wiring pattern (32); and a protective element (50) arranged on the second region (32B) of the wiring pattern (32), wherein a width of the first region (32A) of the wiring pattern (32) in a first direction greater than a width of the semiconductor laser element (20) in the first direction and equal to or less than a first distance, a length of the first region (32A) of the wiring pattern (32) in a second direction between the first position and a distal end of the first region (32A) is a second distance, wherein the second direction is orthogonal to the first direction, the second region (32B) is located on the opposite side of the first region (32A) with respect to the first position in a plan view, a maximum width of the second region (32B) in the first direction is greater than the width of the first region (32A) in the first direction at the first position, and an interval in the second direction between the semiconductor laser element (20) and the protective element (50) is greater than 0 µm and less than 170 µm. [2] Light-emitting device (100) according to claim 1, wherein the second distance is equal to or greater than a value obtained by subtracting a length of a region (12C) of a light-emitting surface of the semiconductor laser element (20), which protrudes from the mounting surface (31) of the submount (30) in the top view, from a length of the semiconductor laser element (20) in the second direction. [3] Light-emitting device (100) according to claim 1 or 2, wherein the protective element (50) is arranged in a position which is not traversed by an imaginary line passing through a light-emitting point of the semiconductor laser element (20) and which is parallel to the second direction in the top view. [4] Light-emitting device (100) according to any one of claims 1 to 3, wherein the protective element (50) is arranged in a position traversed by an imaginary line passing through a first point and parallel to the second direction, the first point being an intersection between an outer edge of the first region (32A) extending in the second direction and an outer edge of the second region (32B) extending in the first direction. [5] Light-emitting device (100) according to any one of claims 1 to 4, wherein the protective element (50) has a width in the first direction that is greater than the width of the semiconductor laser element (20), and the protective element (50) has a length in the second direction that is less than the width of the semiconductor laser element (20). [6] Light-emitting device (100) according to one of claims 1 to 5, wherein an interval in the second direction between the semiconductor laser element (20) and the protective element (50) is in a range (12C) of 50 µm to 100 µm. [7] Light-emitting device (100) according to any one of claims 1 to 6, wherein an interval in the second direction between the semiconductor laser element (20) and the protective element (50) is greater than 0 µm and 80 µm or less. [8] Light-emitting device (100) according to any one of claims 1 to 7, further comprising: a plurality of the submounts (30) including the submount (30), wherein the plurality of the submounts (30) are arranged side by side in the first direction; a plurality of semiconductor laser elements (20) including the semiconductor laser element (20), wherein the plurality of semiconductor laser elements (20) are each arranged on the plurality of submounts (30); and a plurality of protective elements (50) including the protective element (50), wherein the plurality of protective elements (50) are each arranged on the plurality of submounts (30). [9] Light-emitting module (200), comprising: a first light-emitting device (100) comprising a first packing, wherein the first light-emitting device (100) is the light-emitting device (100) according to any one of claims 1 to 8, and comprising a plurality of first semiconductor laser elements comprising the semiconductor laser element (20); a second light-emitting device (101) containing a second packing and containing one or more second semiconductor laser elements; and a wiring substrate (80) on which the first light-emitting device (100) and the second light-emitting device (101) are mounted, wherein a number of second semiconductor laser elements in the second light-emitting device (101) is smaller than a number of first semiconductor laser elements in the first light-emitting device (100). [10] Light-emitting module (200) according to claim 9, wherein the first packing and the second packing have the same external shape. [11] Light-emitting module (200) according to claim 9 or 10, wherein the first light-emitting device (100) comprises a plurality of first submounts (30) including the submount (30), and the first semiconductor laser elements are each arranged on the plurality of first submounts (30), and the second light-emitting device (101) includes one or more second submounts (30) having a shape different from the shape of each of the first submounts (30), and wherein the one or more second semiconductor laser elements are arranged on each of the one or more second submounts (30). [12] Light-emitting module (200) according to any one of claims 9 to 11, wherein the second light-emitting device (101) includes a protective element (50) which is attached to the second pack, and the protective element (50) is not arranged on any of the one or more second submounts (30).

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