Power semiconductor module with lead body and method for manufacturing

Abstract

A power semiconductor module is presented with an electrically insulating frame-like molded body and a first and a second substrate conductor arranged therein. The molded body has a holding section that extends from a first side wall of the molded body into the interior of the molded body. A receiving section of a lead body is mechanically connected to the holding section. A first contact section of the lead body is electrically conductively connected to a first contact surface and a second contact section of the lead body is electrically conductively connected to a second contact surface. Furthermore, a method for producing such a power semiconductor module is presented.

Description

[0001] The invention describes a power semiconductor module with an electrically insulating frame-like molded body and substrate conductor tracks arranged therein, wherein the molded body has a holding section which extends from a first side wall of the molded body into the interior of the molded body and wherein the holding section is mechanically connected to a receiving section of a conductor body.

[0002] DE 10 2023 116 462 A1 discloses a power semiconductor module with a first substrate and an electrically insulating molded body arranged, preferably laterally, adjacent to the first substrate. The first substrate has a first conductor track and a plurality of further conductor tracks arranged on an electrically insulating base body and spaced thereon. A conductor body is arranged on a first conductor track and is electrically conductively connected by a first contact surface to a first contact section of the first conductor track. The conductor body has a conductor section and a holding section, the holding means of which is connected to a receptacle of the molded body. A method for producing such a power semiconductor module is also presented.

[0003] EP 4 148 789 A1 discloses a power semiconductor module having at least one substrate, having a first metallization layer on a dielectric insulating layer and a semiconductor component applied to the first metallization layer.

[0004] A housing that at least partially encloses a substrate and at least one press-on pin, wherein each press-on pin is arranged either on the substrate or on a semiconductor device. The press-on pin extends vertically from the substrate and is perpendicular to a surface of the substrate, wherein each press-on pin is mechanically connected to at least one sidewall of the housing by means of a rod. The rod extends horizontally between the respective press-on pin and a sidewall and runs parallel to the surface of the substrate.

[0005] In view of the above-mentioned circumstances, the invention is based on the object of presenting a power semiconductor module with a substrate and a molded body, which makes it possible to attach a scalable number of conductor bodies to the molded body in a space-saving manner in order to simplify the manufacturing process of the power semiconductor module and to improve the current-carrying capacity of a conductor track of the substrate.

[0006] This object is achieved according to the invention by a power semiconductor module with an electrically insulating frame-like molded body and a first and a second substrate conductor track arranged therein, wherein the molded body has a holding section which extends from a first side wall of the molded body into the interior of the molded body and wherein a receiving section of a lead body is mechanically connected to the holding section and wherein a first contact section of the lead body is electrically conductively connected to a first contact surface and a second contact section of the lead body is electrically conductively connected to a second contact surface.

[0007] It is preferred if the first contact area is arranged on the first substrate conductor track and the second contact area is arranged on the second substrate conductor track, or wherein the first contact area is arranged on a first power semiconductor component and the second contact area is arranged on a second power semiconductor component, or wherein the first contact area is arranged on a first power semiconductor component and the second contact area is arranged on a second substrate conductor track.

[0008] It may also be preferred that the first and second substrate conductor tracks are arranged on a common substrate body.

[0009] It may be advantageous if the first substrate conductor track is arranged on a first substrate body and the second substrate conductor track is arranged on a second substrate body.

[0010] It may also be preferred if the holding section extends from the first to an opposite second side wall of the molded body.

[0011] It may also be preferred if the holding element protrudes from the holding section and has arrow-like or hook-like formations or wedge-shaped recesses or a fork-shaped tip for receiving the lead body.

[0012] Furthermore, it may be advantageous if the holding element is designed as a continuous window in the holding section in order to accommodate the lead body.

[0013] It is preferred if the holding section with its holding element can accommodate and guide two line bodies in different levels one above the other and separately from each other, without connecting these two to each other in an electrically conductive manner.

[0014] It may also be preferred if the holding section has a foot section whose foot surface is in contact with a substrate conductor track, a substrate body or a base body.

[0015] It may be advantageous if the lead body is formed as a metal molded body or as a bonding wire, preferably as a copper metal molded body.

[0016] It may also be advantageous if the lead body is designed as a metallic flat strip; particularly preferably, the metallic flat strip can have a perforation in the region of the receiving section, which serves to connect the lead body to a holding element.

[0017] It is preferred if the first contact section of the conductor body and the second contact section of the conductor body are electrically conductively connected to the associated substrate conductor track in a material-locking manner, preferably by means of a welded, sintered or soldered connection.

[0018] It may also be preferred if the receiving section is connected to the holding section in a materially bonded manner, in particular by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a, preferably thermally induced, crimp connection or in the context of the production of the shaped body by means of an injection-molding process.

[0019] It may be advantageous if the lead body is curved.

[0020] It may also be advantageous if the molded body is designed as a plastic molded body.

[0021] It is preferred if the shaped body is formed as part of a housing of the power semiconductor module.

[0022] The term “base body” should be understood here in particular as the base plate of a power semiconductor module.

[0023] The above-mentioned object is further achieved according to the invention by a method for producing a power semiconductor module according to one of the preceding claims with the following steps in the order abcd or bacd: a) arranging a first substrate laterally adjacent to a first side wall of the electrically insulating molded body, wherein the first substrate has a first conductor track and a further substrate conductor track on an electrically insulating base body; b) arranging a lead body with a receiving portion, which is connected to a holding element of the holding portion of the molded body; c) arranging a first contact portion of the lead body on a first contact surface and a second contact portion of the lead body on a second contact surface; d) Connecting the respective contact surface with the associated contact section.

[0024] It may be advantageous if, in method step a), a second substrate is arranged next to the first substrate and also laterally adjacent to the first side wall, wherein the second substrate has a second substrate conductor track and a plurality of further substrate conductor tracks on an electrically insulating base body.

[0025] It may also be preferred if the receiving section is connected to the holding element in a materially bonded manner, preferably by means of an adhesive connection, or in a force-locking manner, preferably by means of a snap-locking connection, or in a form-locking manner, preferably by means of a preferably thermally induced crimp connection.

[0026] It may be advantageous if the material connection of the respective contact surface with the associated contact sections is formed by means of a friction weld, a laser weld, a sintered or a soldered connection.

[0027] Of course, unless this is explicitly or per se excluded or contradicts the idea of ​​the invention, the features or groups of features mentioned in the singular, for example the conductor body, can be present multiple times in the power semiconductor module according to the invention.

[0028] It is understood that the various embodiments of the invention, regardless of whether they are mentioned in connection with the power semiconductor module or with the method, can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the specified combinations, but also in other combinations or on their own, without departing from the scope of the present invention.

[0029] Further explanations of the invention, advantageous details and features, emerge from the following description of the Fig. 1 to 5 schematically illustrated embodiments of the invention, or of respective parts thereof.

[0030] Fig. 1 shows a power semiconductor module 1 with a molded body 3, which at least partially surrounds a substrate. First and second substrate conductor tracks 22, 24 are arranged at a distance from one another. A holding section 30 extends from a first side wall of the molded body 32 toward a second side wall of the molded body 34. At least one conductor body 4 is arranged such that its receiving section 40 is received by a holding section 30 of the molded body 3. A first contact section 420 of the conductor body 4 comes to rest on the first contact surface 222 of the first substrate conductor track 22 and is fixed thereto by means of a material-to-material connection 520. A second contact section 422 of the conductor body 4 comes to rest on the second contact surface 224 of the second substrate conductor track 24 and is fixed thereto by means of a material-to-material connection 520.A broken line between A and B shows the section through this plan view, which is shown in the following figures.

[0031] In the Fig. 2 a) shows a first embodiment of the power semiconductor module 1 in an A-B sectional view. Shown is a first substrate 2 comprising a base body 20 and a substrate body 7 arranged thereon. Arranged on the substrate body 7 are a first substrate conductor track 22, a second substrate conductor track 24, and a partial region of the molded body 3 with its holding section 30 and its holding element 300. Arranged on the sides A and B, adjacent to the first substrate 2 and the two substrate conductor tracks 22, 24, are further sections of the molded body 3 which enclose the substrate. The conductor body 4 rests with its first contact section 420 on the first contact surface 222 of the first substrate conductor track 22, and with its second contact section 422 on the second contact surface 224 of the second substrate conductor track 24.The receiving section 40 of the lead body 4 is received or held by the holding section 30 and its holding element 300 of the molded body 3. The receiving or holding takes place in a materially bonded manner, in particular by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a preferably thermally induced crimp connection, or during the production of the molded body 3 by means of an injection-molding process.

[0032] The Fig. 2 b) is a second embodiment of the power semiconductor module 1 in an A-B sectional view. Shown is a first substrate 2 comprising a base body 20 and a substrate body 7 arranged thereon. Arranged on the substrate body 7 are a first substrate conductor track 22, a second substrate conductor track 24, and a partial region of the molded body 3 with its holding section 30 and its holding element 300. Arranged on sides A and B are further sections of the molded body 3, which enclose the first substrate 2 and its associated layers. Arranged on the first substrate conductor track 22 is a first power semiconductor component 82, and on the second substrate conductor track 24 is a second power semiconductor component 84.The lead body 4 rests with its first contact section 420 on the first contact surface 822 of the first power semiconductor component 82 and with its second contact section 422 on the second contact surface 824 of the second power semiconductor component 84. The receiving section 40 of the lead body 4 is received or held by the holding section 30 and its holding element 300 of the molded body 3. The receiving or holding takes place in a materially bonded manner, in particular by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a preferably thermally induced crimp connection, or during the production of the molded body 3 by means of an injection-molding process.

[0033] In the Fig. 2 c) shows a third embodiment of the power semiconductor module 1 in an A-B sectional view. A substrate body 7 is shown, at least in sections, enclosed by the molded body 3. A first substrate conductor track 22 and a second substrate conductor track 24 and a partial region of the molded body 3 with its holding section 30 and its holding element 300 are arranged on the substrate body 7. A power semiconductor component 8, 82, 84 is arranged on the first substrate conductor track 22. The conductor body 4 rests with its first contact section 420 on the first contact surface 822 of a power semiconductor component 8, 82, 84 and with its second contact section 422 on a second contact surface 224 of the second substrate conductor track 24. The receiving section 40 of the conductor body 4 is received or held by the holding section 30 and its holding element 300 of the molded body 3.The receiving or holding takes place in a material-locking manner, in particular by means of an adhesive connection, or in a force-locking manner, preferably by means of a snap-lock connection, or in a form-locking manner, preferably by means of a, preferably thermally induced, crimp connection or in the context of the production of the shaped body 3 by means of an injection-molding process.

[0034] The Fig. 2 d) shows a fourth embodiment of the power semiconductor module 1 in an A-B sectional view. Shown are a first substrate body 72 and, adjacent thereto, a second substrate body 74, which are at least partially enclosed by a molded body 3 and its holding portion 30 and the holding elements 300 and are thereby spaced apart from one another. A first substrate conductor track 22 is arranged on the first substrate body 72, and a second substrate conductor track 24 is arranged on the second substrate body 74. The conductor body 4 rests with its first contact portion 420 on the first contact surface 222 of the first substrate conductor track 22, and with its second contact portion 422 on the second contact surface 224 of the second substrate conductor track 24. The receiving portion 40 of the conductor body 4 is received or held by the holding portion 30 and its holding element 300 of the molded body 3.The receiving or holding takes place in a material-locking manner, in particular by means of an adhesive connection, or in a force-locking manner, preferably by means of a snap-lock connection, or in a form-locking manner, preferably by means of a, preferably thermally induced, crimp connection or in the context of the production of the shaped body 3 by means of an injection-molding process.

[0035] Fig. 2 e) shows a fifth embodiment of the power semiconductor module 1 in an A-B sectional view. It shows a molded body 3 which at least partially encloses a base body 20. A first substrate conductor track 22 and a second substrate conductor track 24 are arranged on the base body 20. A section of the molded body 3 with its holding section 30 and the holding element 300 is arranged above the first substrate conductor track 22 and a second substrate conductor track 24. This section of the molded body 3 is not in contact with the substrate conductor tracks 22, 24 or the base body 20. The conductor body 4 rests with its first contact section 420 on the first contact surface 222 of the first substrate conductor track 22 and with its second contact section 422 on the second contact surface 224 of the second substrate conductor track 24. The receiving section 40 of the lead body 4 is received or held by the holding section 30 and its holding element 300 of the molded body 3.The receiving or holding takes place in a material-locking manner, in particular by means of an adhesive connection, or in a force-locking manner, preferably by means of a snap-lock connection, or in a form-locking manner, preferably by means of a, preferably thermally induced, crimp connection or in the context of the production of the shaped body 3 by means of an injection-molding process.

[0036] The Fig. 2 f) shows a sixth embodiment of the power semiconductor module 1 in an A-B sectional view. A molded body 3 encloses at least sections of a first and second substrate 2, 6. A first power semiconductor component 82 is arranged on the first substrate 2, and a second power semiconductor component 84 is arranged on a second substrate 6. A section of the molded body 3 with its holding section 30 and the holding element 300 is arranged above the two power semiconductor components 82, 84 and the two substrates 2, 6. This section of the molded body 3 is not in contact with the first or second substrate 2, 6 or the power semiconductor components 82, 84. The lead body 4 rests with its first contact section 420 on the first contact surface 822 of the first power semiconductor component 82 and with its second contact section 422 on the second contact surface 824 of the second power semiconductor component 84.The receiving section 40 of the lead body 4 is received and held by the underside of the holding section 30 and its holding element 300 of the molded body 3. Due to its curved shape, the lead body 4 can be clamped, received, or held like a spring under the holding section 30 and its holding element 300 of the molded body 3. The clamping, receiving, or holding takes place in a materially bonded manner, in particular by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a preferably thermally induced crimp connection, or during the production of the molded body 3 by means of an injection-molding process.

[0037] The Fig. 3 a k' show a variation of the holding elements 300 of the holding section 30 of the molded body 3 in a side view. Fig. 3 a), Fig. 3 b) and Fig. 3 c) show continuous fenestrations with rectangular or circular cross-sections. Multiple continuous fenestrations can also be implemented side by side or one above the other.

[0038] In the Fig. 3d), Fig. 3 e), Fig. 3 f) and Fig. 3 k), the holding elements 300 are designed as recesses on the upper side of the holding section 30 in order to receive the receiving section 40 of the lead body 4. In the Fig. 3 k) and Fig. 3 k') it is shown that the holding element 300 can be deformed after insertion of the lead body 4.

[0039] The Fig. 3 g), Fig. 3 hours), Fig. 3 i), and Fig. 3 j) show the holding section 30 with notch-shaped recesses which serve as a holding element 300 for receiving the holding section 40 of the lead body 4.

[0040] The Fig. 4 shows a base surface 33 of a holding section 30 of the molded body 3, preferably positioned on a substrate 2, 6, 7, particularly preferably a base body 20, further preferably a substrate conductor track 22, 24, 25 or a substrate body 72, 74. Between the base surface 33 and the holding element 300 of the holding section 30, there is a base section 31 of the holding section 30.

[0041] The Fig.5 shows a power semiconductor module 1 with a molded body 3, which at least partially surrounds a substrate. First and second substrate conductor tracks 22, 24 are arranged at a distance from one another. A further substrate conductor track 25 is arranged at a distance from the first substrate conductor track 22. The holding section 30 extends from a first side wall of the molded body 32 toward a second side wall of the molded body 34. At least one conductor body 4 is designed as a metallic flat strip and has a perforation 41 in its receiving section 40. The holding section 30 of the molded body 3 is configured such that the holding element 300 engages into the at least one perforation 41 in order to fix the conductor body 4. The conductor body 4 rests with its first contact section 420 on the first contact surface 222 of the first substrate conductor track 22 and with its second contact section 422 on the second contact surface 224 of the second substrate conductor track 24.A first contact section 420 of the conductor body 4 lies on the first contact surface 222 of the first substrate conductor track 22 and is fixed by means of a material-to-material connection 520. A second contact section 422 of the conductor body 4 lies on the second contact surface 224 of the second substrate conductor track 24 and is fixed by means of a material-to-material connection 520. A further conductor body 4' connects the first substrate conductor track 22 to the further substrate conductor track 25. The further conductor body 4' has a taper in its receiving section 40, which serves to be received by the holding element 300 of the holding section 30' of the molded body 3. The holding section 30' extends from a first side wall of the molded body 32 into the interior of the molded body 3 in the direction of a second side wall of the molded body 34, but is not in contact with the latter.The broken lines show the contours of the first substrate conductor track 22 and the further substrate conductor track 25. The conductor body 4 or the further conductor body 4' can have different cross-sectional shapes and thicknesses in its course from the first contact section 420 to its second contact section 422; it is particularly preferred that the conductor body tapers in the region of the receiving section 40. Reference symbol 1 power semiconductor module 2 first substrate 3 molded bodies 4 cable bodies 4' additional line body 6 second substrate 7 substrate bodies 8 semiconductor component 20 basic bodies 22 first substrate conductor track 24 second substrate conductor track 25 additional substrate conductor tracks 30 stopping section 30' stopping section 31 Foot section 32 first side wall of the molded body 33 foot area 34 second side wall of the molded body 40 recording section 41 holes 72 first substrate body 74 second substrate body 82 first power semiconductor component 84 second power semiconductor component 222 first contact surface 224 second contact surface 300 holding element 420 first contact section 422 second contact section 520 material connection 822 first contact surface 824 second contact surface QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2023 116 462 A1

[0002] EP 4 148 789 A1

[0003]

Claims

[1] Power semiconductor module (1) with an electrically insulating frame-like molded body (3) and a first and a second substrate conductor track (22, 24) arranged therein, wherein the molded body (3) has a holding section (30) which extends from a first side wall (32) of the molded body (3) into the interior of the molded body (3), and wherein a receiving section (40) of a lead body (4) is mechanically connected to the holding section (30), and wherein a first contact section (420) of the lead body (4) is electrically conductively connected to a first contact surface (222, 822) and a second contact section (422, 824) of the lead body (4) is electrically conductively connected to a second contact surface (224). [2] Power semiconductor module (1) according to claim 1, wherein the first contact area (222) is arranged on the first substrate conductor track (22) and the second contact area (224) is arranged on the second substrate conductor track (22, 24), or wherein the first contact area (822) is arranged on a first power semiconductor component (82) and the second contact area (824) is arranged on a second power semiconductor component (84), or wherein the first contact area (822) is arranged on a first power semiconductor component (82) and the second contact area (224) is arranged on a second substrate conductor track (24). [3] Power semiconductor module (1) according to one of claims 1 or 2, wherein the first and second substrate conductor tracks (22, 24) are arranged on a common substrate body (7). [4] Power semiconductor module (1) according to one of claims 1 or 2, wherein the first substrate conductor track (22) is arranged on a first substrate body (72) and the second substrate conductor track (24) is arranged on a second substrate body (74). [5] Power semiconductor module (1) according to one of the preceding claims, wherein the holding section (30) extends from the first to an opposite second side wall (32, 34) of the molded body. [6] Power semiconductor module (1) according to one of the preceding claims, wherein the holding element (300) protrudes from the holding section (30) and has arrow-like or hook-like formations or wedge-shaped recesses or a fork-shaped tip for receiving the lead body (4). [7] Power semiconductor module (1) according to one of the preceding claims, wherein the holding element (300) is designed as a continuous window in the holding section (30) in order to receive the lead body (4). [8] Power semiconductor module (1) according to one of the preceding claims, wherein the holding section (30) with its holding element (300) can receive and guide two conductor bodies in different levels one above the other and separately from each other, without electrically connecting these two to each other. [9] Power semiconductor module (1) according to one of the preceding claims, wherein the holding section (30) has a foot section (31) whose foot surface (33) is in contact with a substrate conductor track (22, 24), a substrate body (7, 72, 74) or a base body (20). [10] Power semiconductor module (1) according to one of the preceding claims, wherein the conductor body (4) is formed as a metal molded body or as a bonding wire, preferably as a copper metal molded body. [11] Power semiconductor module (1) according to one of the preceding claims, wherein the lead body (4) is designed as a metallic flat strip, particularly preferably the metallic flat strip can have a perforation (41) in the region of the receiving section (40), which serves to connect the lead body (4) to a holding element (300) of the holding section (30). [12] Power semiconductor module (1) according to one of the preceding claims, wherein the first contact section (420) of the lead body (4) and the second contact section (422) of the lead body (4) are electrically conductively connected to the associated substrate conductor track in a material-to-material manner, preferably by means of a welded, sintered or soldered connection. [13] Power semiconductor module (1) according to one of the preceding claims, wherein the receiving section (40) is connected to the holding element (300) of the holding section (30) in a materially bonded manner, in particular by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a, preferably thermally induced, crimp connection or in the context of the production of the molded body by means of an injection-molding process. [14] Power semiconductor module (1) according to one of the preceding claims, wherein the conductor body (4) is arcuate. [15] Power semiconductor module (1) according to one of the preceding claims, wherein the molded body (3) is designed as a plastic molded body. [16] Power semiconductor module (1) according to one of the preceding claims, wherein the shaped body (3) is formed as a part of a housing of the power semiconductor module (1). [17] Method for producing a power semiconductor module (1) according to one of the preceding claims, comprising the following steps in the order abcd or bacd: e) arranging a first substrate (2) laterally adjacent to a first side wall (32) of the electrically insulating molded body (3), wherein the first substrate (2) has a first conductor track (22) and a further substrate conductor track (24) on an electrically insulating base body (20); f) arranging a lead body (4) with a receiving section (40), which is connected to a holding element (300) of the holding section (30) of the shaped body (3); g) arranging a first contact portion (420) of the lead body (4) on a first contact surface (222,822) and a second contact portion (422) of the lead body (4) on a second contact surface (224,824); h) Connecting the respective contact surface (222,224) to the associated contact section (420,422,822,824). [18] Method according to claim 17, wherein in method step a) a second substrate (6) is arranged next to the first substrate (2) and also laterally adjacent to the first side wall (32), wherein the second substrate (6) has a second substrate conductor track (24) and a plurality of further substrate conductor tracks (25) on an electrically insulating base body (20). [19] Method according to claim 17 or 18, wherein the receiving portion (40) is connected to the holding element (300) in a materially bonded manner, preferably by means of an adhesive connection, or in a force-fitting manner, preferably by means of a snap-lock connection, or in a form-fitting manner, preferably by means of a preferably thermally induced crimp connection. [20] Method according to one of claims 17 to 19, wherein the material connection (520) of the respective contact surface (222,224) with the associated contact sections (420,422) is formed by means of a friction welding, a laser welding, a sintering or a soldering connection.

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