Semiconductor manufacturing equipment and semiconductor device

Abstract

A semiconductor manufacturing device 100 comprises: a wire guide 1 for providing a wire 29; a tool 3 for connecting the wire 29, which is provided by the wire guide 1, to a plurality of bonded parts of each of the semiconductor devices 20 and 40; a first blade 5 for half-cutting a remaining part of the wire 29, differing from a part between the plurality of bonded parts; and a second blade 6, which has a cutting edge the angle of which is an acute angle, which is smaller than an angle of the cutting edge of the first blade 5, and which cuts the half-cut part of the wire 29.

Description

Background of the inventionField of the invention

[0001] The present disclosure relates to semiconductor manufacturing apparatus and semiconductor devices. Description of the state of the art

[0002] Traditionally, an aluminum wire was used to connect bonded elements, such as semiconductor elements, during the manufacturing of a semiconductor device. After the aluminum wire is bonded, any unnecessary remaining portion of the aluminum wire is cut off.

[0003] For example, Japanese Patent Application Laid-Open No. 2002-26058 illustrates a method of cutting an aluminum wire by half-cutting a remaining aluminum wire at an air position near a semiconductor element and performing a tear-off operation with respect to the half-cut part so as not to scratch the semiconductor element during cutting of the aluminum wire.

[0004] Semiconductor devices have recently become more space-efficient and advanced. As a result, for semiconductor devices with long lifetimes and high-temperature operation, replacing conventional wiring technology using aluminum wire with wiring technology using copper wire, which has a higher hardness than aluminum wire, or any other metal wire expected to increase the durability of the semiconductor device is being considered.

[0005] However, the wiring technology using the copper wire has a problem in that a higher stress is applied to a cutting element such as a cutter because the copper wire has a higher hardness than the aluminum wire, resulting in a progression of wear and an increase in a frequency of breakage of the cutting element. Summary

[0006] It is an object of the present disclosure to provide a technology that enables reduction of a stress acting on a cutting member when manufacturing a semiconductor device having wires having a higher hardness than aluminum wires as wiring.

[0007] A semiconductor manufacturing apparatus according to the present disclosure is a semiconductor manufacturing apparatus for manufacturing a semiconductor device. The semiconductor manufacturing apparatus includes a wire feeder, a tool, a first blade, and a second blade. The wire feeder provides a wire. The tool connects the wire provided by the wire feeder to a plurality of bonded parts of the semiconductor device. The first blade half-cuts a remaining part of the wire that deviates from a part between the plurality of bonded parts. The second blade has a cutting edge whose angle is an acute angle smaller than an angle of the cutting edge of the first blade, and it cuts the half-cut part of the wire.

[0008] The remaining part of the wire is cut in half by means of the first blade 5 and the second blade 6, respectively, so that when the semiconductor device is manufactured which has wires having a higher hardness than aluminum wires as wiring, a stress acting on the first blade and the second blade as cutting members can be reduced compared to a case where the wire is cut entirely at once.

[0009] These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. Short description of the characters Fig. 1 is a side view illustrating configurations of a wire guide and its surroundings of a semiconductor manufacturing apparatus according to an embodiment; Fig. 2 is a perspective view of a package type semiconductor device; Fig. 3 is a cross-sectional view of the package type semiconductor device; Fig. 4 is a side view of a lead frame type semiconductor device; Fig. 5 is a cross-sectional view of the lead frame type semiconductor device; Fig. 6 is a side view illustrating examples of driving mechanisms for driving a first blade and a second blade of the semiconductor manufacturing apparatus according to the embodiment; Fig. 7 is a side view illustrating other examples of driving mechanisms for driving the first blade and the second blade of the semiconductor manufacturing apparatus according to the embodiment; Fig. 8 is a side view illustrating examples of cutting surfaces of a wire; Fig. 9 is a side view illustrating further examples of the cutting surfaces of the wire; Fig. 10 is a side view illustrating an operation during a wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 11 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 12 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 13 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 14 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 15 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 16 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; Fig. 17 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment; and Fig. 18 is a side view illustrating an operation during the wiring process of the semiconductor manufacturing apparatus according to the embodiment. Description of the preferred embodiments<Ausführungsform>

[0010] An embodiment is described below with reference to the figures. Fig. 1 is a side view illustrating configurations of a wire guide 1 and its surroundings of a semiconductor manufacturing apparatus 100 according to the embodiment.

[0011] As in Fig. 1, the semiconductor manufacturing apparatus 100 is an apparatus for manufacturing a semiconductor device, and specifically, it is an apparatus for performing a wiring process as part of manufacturing the semiconductor device. (Configuration of a semiconductor device)

[0012] A package type semiconductor device 20 manufactured by the semiconductor manufacturing apparatus 100 will first be briefly described. Fig. 2 is a perspective view of the package type semiconductor device 20. Fig. 3 is a cross-sectional view of the package type semiconductor device 20. As shown in Fig. 2 and Fig. As illustrated in FIG. 3, the package-type semiconductor device 20 includes an insulating substrate 22, semiconductor elements 25, a housing 26, terminals 27, a sealing resin 28, and wires 29. The insulating substrate 22 includes an insulating layer 21a, a metal pattern 21b disposed on an upper surface of the insulating layer 21a, and a metal pattern 21c disposed on a lower surface of the insulating layer 21a. The metal patterns 21b and 21c are formed of copper, aluminum, or nickel. When the metal patterns 21b and 21c are copper patterns, the copper patterns may be subjected to nickel plating and the like.

[0013] The semiconductor elements 25 are mounted on the metal structure 21b via interconnect materials 24. Examples of the semiconductor elements 25 include insulated-gate bipolar transistors (IGBTs), reverse-conducting IGBTs (RC-IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and freewheeling diodes (FWDs). A material for the semiconductor elements 25 can be silicon (Si) as usual, and can be a wide-band-gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), and diamond. The wide-band-gap semiconductor as the material for the semiconductor elements 25 enables stable operation at a high temperature and high voltage and an increase in switching speed. The number of semiconductor elements 25 can be one, or it can be two or more.

[0014] The housing 26 has a rectangular frame shape and is fixed to the side surfaces of the insulating substrate 22 so that the insulating substrate 22 and the semiconductor elements 25 are laterally surrounded. The terminals 27 are connected to the inner peripheral surfaces of the housing 26. A method for fixing the terminals 27 is not limited to this method, and the terminals 27 may be embedded in the sealing material 28 and may be integrated with the housing 26 by insert molding. One end side of the respective terminals 27 protrudes outward from the housing 26 and is bent horizontally (see Fig. 2). As in Fig. 3, the terminals 27 may extend vertically without being bent horizontally.

[0015] The wires 29 connect the semiconductor elements 25 and the terminals 27 and connect the semiconductor elements 25. Each of the wires 29 is formed, for example, from a metal with a higher hardness than aluminum and has a circular cross-section with a diameter of 100 μm or more and 600 μm or less, and is a copper wire. Each of the wires 29 may be, for example, a copper ribbon wire having a rectangular cross-section with a width of approximately 0.1 mm or more and 20 mm or less and a height of approximately 0.1 mm or more and 5 mm or less.

[0016] The housing 26 is filled with the sealing resin 28, and the sealing resin 28 seals the semiconductor elements 25 mounted on the insulating substrate 22. An example of the sealing resin 28 includes an epoxy resin.

[0017] After the semiconductor elements 25 are mounted on the insulating substrate 22, a wiring process for internal wiring is performed using the wires 29. The wiring process is a process for connecting a first bonded part and a second bonded part, such as the semiconductor elements 25 and the terminals 27, the semiconductor elements 25 and the metal patterns 21b formed in the upper surface of the insulating substrate 22, and the semiconductor elements 25 (one semiconductor element 25 and another semiconductor element 25), of the semiconductor device 20 using the wires 29, and is an important process for the semiconductor device 20 to perform an electrical function.

[0018] The semiconductor manufacturing apparatus 100 can be used not only for manufacturing the package-type semiconductor device 20, but also for a lead-frame-type semiconductor device 40. The lead-frame-type semiconductor device 40 will be briefly described. Fig. 4 is a side view of the lead frame type semiconductor device 40. Fig. 5 is a cross-sectional view of the lead frame type semiconductor device 40.

[0019] As in the Fig. 4 and Fig. 5, the lead frame type semiconductor device 40 includes a lead frame 41, an insulating plate 42, the semiconductor elements 25, the wires 29, lead frame 43, and the sealing material 28.

[0020] The insulating plate 42 adheres to a lower surface of the lead frame 41. One or more semiconductor elements 25 are mounted on an upper surface of the lead frame 41 via bonding materials 24, and one or more remaining semiconductor elements 25 are bonded to upper surfaces of the lead frames 43 via bonding materials 24a having different properties than the bonding materials 24. Examples of the bonding materials 24 and 24a include solder, silver pastes, and sintered pastes. The wires 29 connect the semiconductor elements 25 and the lead frames 43 and connect the semiconductor elements 25. One or more wires 29 connected to the one or more semiconductor elements 25 mounted on the upper surfaces of the lead frames 43 sometimes have a wire diameter different from that of the one or more wires 29.The sealing resin 28 has the shape of a cube and seals the lead frame 41, the insulating plate 42, the semiconductor elements 25, the wires 29, and the lead frames 43. The sealing resin 28 is shown in . Fig. 5 is not illustrated. (Configuration of semiconductor manufacturing equipment)

[0021] Next, the semiconductor manufacturing apparatus 100 will be described. As shown in Fig. As illustrated in FIG. 1, the semiconductor manufacturing apparatus 100 includes the wire guide 1 as a wire feeder, a wire guide holder 2, a tool 3, a wire clamp 4, a first blade 5, and a second blade 6. A mechanism including the wire guide 1, the wire guide holder 2, the tool 3, the wire clamp 4, the first blade 5, and the second blade 6 is hereinafter also referred to as a wire connecting mechanism. That is, the semiconductor manufacturing apparatus 100 includes the wire connecting mechanism. The semiconductor manufacturing apparatus 100 further includes a spool around which a wire 29 is wound, although the spool is not illustrated. The spool supplies the wire 29 to the wire guide 1.

[0022] The wire guide 1 has a conical shape and is held by the wire guide holder 2. The wire guide 1 has a through-hole (not illustrated) extending along a longitudinal direction thereof. The wire 29 provided by the spool is inserted into the hole of the wire guide 1, and the wire guide 1 guides the wire 29 from an inlet to an outlet of the through-hole. The inlet of the through-hole is located at an upper end of the wire guide 1, and the outlet of the through-hole is located at a lower end of the wire guide 1.

[0023] The wire clamp 4 is arranged above the wire guide 1 and blocks the wire 29, which is provided to the wire guide 1 by the coil, above the wire guide 1.

[0024] The tool 3 is arranged below the wire guide 1 such that a leading end of the tool 3 is located around the outlet of the through-hole of the wire guide 1. The tool 3 uses vibration while applying pressure to the wire 29 provided from the wire guide 1 to generate frictional heat and melt the wire 29 due to the frictional heat, and it connects the wire 29 to the first bonded part and the second bonded part of the semiconductor device 20. It is therefore understood that when a method called stitch bonding is employed, the wire 29 is connected to three or more bonded parts including not only the first bonded part and the second bonded part, but also a third bonded part, a fourth bonded part, and the like.

[0025] The semiconductor manufacturing apparatus 100 is a front-cutting type semiconductor manufacturing apparatus. Therefore, the first blade 5 is disposed at a front side of the tool 3, that is, at a side of the tool 3 opposite the wire guide holder 2. Furthermore, the first blade 5 is disposed such that a cutting edge, as a leading end of the first blade 5, is located around the leading end of the tool 3. The cutting edge of the first blade 5 is spherical, rectangular, or trapezoidal, and an angle of the cutting edge of the first blade 5 is an obtuse angle. The first blade 5 half-cuts a remaining portion of the wire 29, which deviates from a portion between the first bonded portion and the second bonded portion. Half-cutting here refers to cutting the wire 29 to a thickness approximately equal to half the diameter of the wire 29.

[0026] The first blade 5 is formed to have a width larger than the diameter of the wire 29, and a portion, such as the cutting edge, of the first blade 5 that is to be in contact with the wire 29 has been ground. This prevents the progression of breakage of the first blade 5 during a cutting operation due to a thin crack in the first blade 5 and the like, and enables a smooth cutting operation.

[0027] The second blade 6 is arranged between the tool 3 and the first blade 5. The second blade 6 is also arranged such that a cutting edge as a leading end of the second blade 6 is located around the leading end of the tool 3. An angle of the cutting edge of the second blade 6 is an acute angle smaller than the angle of the cutting edge of the first blade 5, and the cutting edge of the second blade 6 is located above the cutting edge of the first blade 5 when the wire connecting mechanism is at rest. The second blade 6 cuts the part of the wire 29 that was half-cut by the first blade 5. A positional relationship between the cutting edge of the first blade 5 and the cutting edge of the second blade 6 varies depending on configurations of the drive mechanisms for driving the first blade 5 and the second blade 6 and is therefore not limited to the above-mentioned positional relationship.

[0028] The second blade 6 is formed to have a width larger than the diameter of the wire 29, and a portion such as the cutting edge of the second blade 6 that comes into contact with the wire 29 has been ground. This prevents the progression of breakage of the second blade 6 during a cutting operation due to a thin crack in the second blade 6 and the like, and enables a smooth cutting operation.

[0029] The first blade 5 and the second blade 6 are arranged on opposite sides of the tool 3 from the wire guide 1, and the second blade 6 is arranged closer to the tool 3 than the first blade 5, but the arrangement is not limited to this arrangement, and the first blade 5 may be arranged closer to the tool 3 than the second blade 6.

[0030] The semiconductor manufacturing apparatus 100 is not limited to the front-cutting type; instead, it may be a back-cutting type. In this case, it is only necessary that the first blade 5 and the second blade 6 be arranged between the tool 3 and the wire guide 1.

[0031] The semiconductor manufacturing apparatus 100 may have a configuration in which the front-cutting type and the back-cutting type are combined. In this case, only the first blade 5 is required to be arranged between the tool 3 and the wire guide 1, and only the second blade 6 is required to be arranged on an opposite side of the tool 3 from the wire guide 1.

[0032] The drive mechanisms for driving the first blade 5 and the second blade 6 will be described next. Fig. 6 is a side view illustrating examples of the drive mechanism for driving the first blade 5 and the second blade 6 of the semiconductor manufacturing apparatus 100 according to the embodiment. Fig. 7 is a side view illustrating other examples of the driving mechanisms for driving the first blade 5 and the second blade 6 of the semiconductor manufacturing apparatus 100 according to the embodiment.

[0033] As in Fig. As illustrated in Figure 6, the first blade 5 is moved up and down by a damper mechanism 7. The second blade 6 is moved up and down by a motor 8. The damper mechanism 7 can be designed less expensively than the motor 8, but it has lower positioning accuracy of the first blade 5 than the motor 8, so that a machining accuracy of a cutting surface 30 is low. Therefore, it is desirable to use the motor 8 to drive the second blade 6, which requires higher machining accuracy. The first blade 5 is not required to have higher machining accuracy than the second blade 6, so the damper mechanism 7 is used to drive the first blade 5.If cost of components of the semiconductor manufacturing apparatus 100 is not an issue, a motor 8a may be used to drive the first blade 5, and a motor 8b may be used to drive the second blade 6, as shown in FIG. Fig. 7 illustrates.

[0034] Next, cutting surfaces of the wire 29 are described. Fig. 8 is a side view illustrating examples of the cutting surfaces of the wire 29. Fig. 9 is a side view illustrating further examples of the cutting surfaces of the wire 29.

[0035] After half cutting by means of the first blade 5, the wire 29 is cut by means of the second blade 6, so that two different continuous cutting surfaces 30 and 31 are formed as shown in the Fig. 8 and Fig. 9. Specifically, the cutting surface 30 is formed by the first blade 5 and the cutting surface 31 is formed by the second blade 6 in such a way that they are vertically continuous. Fig. Figure 8 illustrates the cutting surface 30 when the cutting edge of the first blade 5 is spherical, and Fig. 9 illustrates the cutting surface 30 when the cutting edge of the first blade 5 is rectangular. (Operation of the semiconductor manufacturing device)

[0036] Next, an operation of the semiconductor manufacturing apparatus 100 will be described. Fig. 10 to 18 are side views showing an operation during the wiring process of the semiconductor manufacturing apparatus 100 according to the embodiment. While a case where the semiconductor device 20 is manufactured will be described below, the semiconductor device 40 is manufactured in a similar manner to the semiconductor device 20, so a description of a case where the semiconductor device 40 is manufactured will be omitted.

[0037] First, as in Fig. As illustrated in FIG. 10, the wire bonding mechanism comprising the wire guide 1, the wire guide holder 2, the tool 3, the wire clamp 4, the first blade 5, and the second blade 6 is lowered toward one of the semiconductor elements 25 as the first bonded part. The wire bonding mechanism is generally lowered to a distance of approximately 500 μm or more and 1000 μm or less from the first bonded part at a high speed, and is then lowered at a low speed, which is referred to as a search speed for detecting the first bonded part. The wire bonding mechanism is lowered at a low speed because it is necessary to consider a fluctuation in a height position of the first bonded part.

[0038] Next, as in Fig. As illustrated in FIG. 11, when the semiconductor manufacturing apparatus 100 detects the first bonded part, the tool 3 outputs a force and ultrasonic vibrations for a predetermined time required for the wiring process. This process completes the bonding of the first bonded part and the wire 29. A bonding time of approximately 50 ms or more and 300 ms or less is required when the wire 29 is an aluminum wire having a diameter of 100 μm or more and 500 μm or less. However, when the wire 29 is a copper wire, the bonding time is slightly longer than that when the wire 29 is the aluminum wire, although this varies depending on a wire diameter of the copper wire.

[0039] Next, upon completion of the connection of the first bonded part and the wire 29, the processing proceeds to a process for forming a wire path (loop). As shown in the Fig. 12 and Fig. As illustrated in Figure 13, the wire connecting mechanism is lifted and moved horizontally toward the second bonded part. In this case, the wire connecting mechanism is sometimes subjected to an up-and-down movement, and the wire 29 is sometimes subjected to mechanical contact deformation using a loop forming component (not illustrated) to form a mountain-shaped loop and a trapezoidal loop.

[0040] Next, as in Fig. 14, the wire connection mechanism is lowered toward the second bonded part while the loop forming process is being performed. The wire connection mechanism before lowering is indicated by alternating long and double short dashed lines. As in the process described with reference to Fig. 10, the wire bonding mechanism is lowered to a distance of approximately 500 µm or more and 1000 µm or less from the second bonded part at a high speed and then lowered at a low speed to detect the second bonded part, which is referred to as the search speed.

[0041] Next, as in Fig. 15, when the semiconductor manufacturing apparatus 100 detects the second bonded part, the tool 3 outputs a force and ultrasonic vibrations for a predefined period of time required for the wiring process, as in the process described with reference to Fig. 11. This process completes the connection of the second bonded part and wire 29.

[0042] Next, as in Fig. As illustrated in FIG. 16, upon completion of the connection of the second bonded part and the wire 29, the wire connecting mechanism is lifted once before the cutting process and performs an operation to retract the wire 29 by a distance required for the next connection to a first point (connection to the first bonded part) of the wire 29. This operation is performed by lifting and horizontally moving the wire connecting mechanism along a wiring direction. When the wire 29 is secured by the distance required for the next connection to the first point of the wire 29, the processing proceeds to the cutting process.

[0043] Next, as in Fig. 17 illustrates that after the wire connecting mechanism is lowered to a height position required for cutting the wire 29, the first blade 5 is lowered to cut the wire 29 halfway, and then the second blade 6 is lowered to cut the wire 29.

[0044] Next, as in Fig. 18 illustrates that after the first blade 5 and the second blade 6 are lifted, the wire connecting mechanism is moved by a predetermined distance in the wiring direction, and if the cutting is incomplete, a tear-off operation is performed. (Effects)

[0045] As described above, the semiconductor manufacturing apparatus 100 according to the embodiment includes: the wire guide 1 for providing the wire 29; the tool 3 for connecting the wire 29 provided by the wire guide 1 to a plurality of bonded parts of each of the semiconductor devices 20 and 40; the first blade 5 for half-cutting the remaining part of the wire 29 other than a part between the plurality of bonded parts; and the second blade 6 having a cutting edge whose angle is an acute angle smaller than an angle of the cutting edge of the first blade 5 and which is provided for cutting the half-cut part of the wire 29.

[0046] The remaining part of the wire 29 is cut in half by the first blade 5 and the second blade 6, respectively, so that when manufacturing semiconductor devices 20 and 40 each having wirings made of wires 29 with a hardness greater than aluminum, a stress applied to the first blade 5 and the second blade 6 as cutting elements can be reduced compared to a case where the wire 29 is cut entirely at once. As a result, wear of the first blade 5 and the second blade 6 is suppressed, and the first blade 5 and the second blade 6 are less likely to break, so that a semiconductor manufacturing apparatus can be provided having cutting elements with longer lifetimes than conventional cutting elements.

[0047] The frequency of replacing the first blade 5 and the second blade 6 is reduced, so that downtime of the semiconductor manufacturing apparatus 100 associated with replacing the first blade 5 and the second blade 6 can be reduced. This can improve the productivity of the respective semiconductor devices 20 and 40.

[0048] The semiconductor manufacturing apparatus 100 further includes the damper mechanism 7 for moving the first blade 5; and the motor 8 for moving the second blade 6. The first blade 5 is not required to have higher machining accuracy than the second blade 6, so the damper mechanism 7 is used to drive the first blade 5 to achieve cost reduction of the semiconductor manufacturing apparatus 100.

[0049] The angle of the cutting edge of the second blade 6 is an acute angle, and thus the second blade 6 tends to wear out sooner, but the angle of the cutting edge of the first blade 5 is an obtuse angle, so that wear of the second blade 6 can be suppressed by cutting the wire 29 by the second blade 6 after half-cutting the wire 29 by the first blade 5.

[0050] Each of the plurality of semiconductor devices 20 and 40 includes the semiconductor elements 25; and the wires 29 connected to the semiconductor elements 25, each having two different continuous cutting surfaces 30 and 31. Each of the wires 29 includes the cutting surface 30 formed by the first blade 5 and the cutting surface 31 formed by the second blade 6, so that the different continuous surfaces 30 and 31 clearly indicate that cutting was performed twice. Furthermore, the wire 29 can have an improved effect for anchoring the sealing resin 28, so that a durability of a part where the wire 29 and the first bonded part are connected and a part where the wire 29 and the second bonded part are connected can be improved. The embodiment may be modified as appropriate.

[0051] Different aspects of the present disclosure are described below as appendices. (Appendix 1)

[0052] A semiconductor manufacturing apparatus for manufacturing a semiconductor device, the semiconductor manufacturing apparatus comprising: a wire feeder providing a wire; a tool for connecting the wire provided by the wire feeder to a plurality of bonded parts of the semiconductor device; a first blade for half-cutting a remaining part of the wire which deviates from a part between the plurality of bonded parts; and a second blade for cutting the half-cut part of the wire, the second blade having a cutting edge whose angle is an acute angle which is smaller than an angle of a cutting edge of the first blade. (Appendix 2)

[0053] Semiconductor manufacturing equipment according to Annex 1 further comprising: a damper mechanism to move the first blade; and a motor to move the second blade. (Appendix 3)

[0054] Semiconductor manufacturing equipment as defined in Annex 1 or 2, where the angle of the cutting edge of the first blade is an obtuse angle. (Appendix 4)

[0055] Semiconductor device comprising: a semiconductor element; and a wire which is connected to the semiconductor element and has two different continuous cutting surfaces. (Appendix 5)

[0056] Semiconductor device according to Annex 4, where the wire is a wire with a diameter of 100 µm or more and 600 µm or less and is made of a metal with a hardness greater than aluminum. (Appendix 6)

[0057] Semiconductor device according to Annex 4 or 5, where the wire is a ribbon wire.

[0058] While the invention has been shown and described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is therefore understood that numerous modifications and variations may be devised without departing from the scope of the invention. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2002-26058

[0003]

Claims

[1] A semiconductor manufacturing apparatus (100) for manufacturing a semiconductor device (20, 40), the semiconductor manufacturing apparatus (100) comprising: • a wire feed (1) for providing a wire (29); • a tool (3) for connecting the wire (29) provided by the wire feeder (1) to a plurality of bonded parts of the semiconductor device (20, 40); • a first blade (5) for half-cutting a remaining part of the wire (29) which deviates from a part between the plurality of bonded parts; and • a second blade (6) for cutting the half-cut part of the wire (29), the second blade (6) having a cutting edge whose angle is an acute angle which is smaller than an angle of a cutting edge of the first blade (5). [2] The semiconductor manufacturing apparatus (100) according to claim 1, further comprising: • a damper mechanism (7) to move the first blade (5); and • a motor (8) to move the second blade (6). [3] The semiconductor manufacturing apparatus (100) according to claim 1 or 2, wherein the angle of the cutting edge of the first blade (5) is an obtuse angle. [4] A semiconductor device (20, 40) comprising: • a semiconductor element (25); and • a wire (29) which is connected to the semiconductor element (25) and has two different continuous cutting surfaces. [5] The semiconductor device (20, 40) according to claim 4, wherein the wire (29) is a wire having a diameter of 100 µm or more and 600 µm or less and is formed of a metal having a hardness greater than aluminum. [6] A semiconductor device (20, 40) according to claim 4 or 5, wherein the wire (29) is a ribbon wire.

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