SENSOR DEVICES AND ASSOCIATED MANUFACTURING PROCESSES

Abstract

A sensor device includes a conductor with a recess, the conductor being designed to carry an electric current. The sensor device further includes a magnetic field sensor chip, which is arranged in the recess on a mounting surface of the conductor and is designed to detect a magnetic field generated by the electric current. The conductor and the magnetic field sensor chip are galvanically isolated from each other.

Description

TECHNICAL AREA

[0001] The present disclosure relates to sensor devices and methods for manufacturing sensor devices. BACKGROUND

[0002] Magnetic field sensors can be used to measure the strength of an electric current flowing through a busbar (or conductor). In some cases, the busbar may be part of a conductor frame on which the magnetic field sensor is mounted. Both the busbar and the magnetic field sensor may be embedded in an encapsulating material.

[0003] German patent application DE 10 2023 121 714 A1 relates to a dual-current magnetic field sensor. German patent application EP 0 867 725 A1 relates to a current sensor integrated with a conductor carrying a measuring current. German patent application DE 10 2019 130 088 A1 relates to a current sensor device with a routable, molded conductor frame.

[0004] Manufacturers and developers of sensor devices are constantly striving to improve their products. Providing smaller and more cost-effective solutions than those already known can be of interest. Furthermore, providing suitable methods for manufacturing such sensor devices can also be of interest. SUMMARY

[0005] Several aspects concern a sensor device. The sensor device comprises a conductor with a recess, the conductor being designed to carry an electric current. The sensor device further comprises a magnetic field sensor chip, which is arranged in the recess on a mounting surface of the conductor and is designed to detect a magnetic field generated by the electric current. The magnetic field sensor chip is an unpackaged, bare chip. The conductor and the magnetic field sensor chip are galvanically isolated from each other.

[0006] Several aspects relate to a method for manufacturing a sensor device. The method comprises forming a conductor with a recess, wherein the conductor is designed to carry an electric current. The method further comprises arranging a magnetic field sensor chip in the recess on a mounting surface of the conductor, wherein the magnetic field sensor chip is designed to detect a magnetic field generated by the electric current. The magnetic field sensor chip is an unpackaged, bare chip. The conductor and the magnetic field sensor chip are galvanically isolated from each other.

[0007] Several aspects concern a sensor device. The sensor device comprises a conductor with a recess, the conductor being designed to carry an electric current. The sensor device further comprises a magnetic field sensor chip, which is arranged in the recess on a mounting surface of the conductor and is designed to detect a magnetic field generated by the electric current. The magnetic field sensor chip is encapsulated in a housing, with one surface of the magnetic field sensor chip facing away from the mounting surface being uncovered by the housing, and the housing being arranged on the mounting surface of the conductor. The conductor and the magnetic field sensor chip are galvanically isolated from each other.

[0008] The person skilled in the art will recognize further features and advantages of the invention when reading the following detailed description and when looking at the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure is illustrated by way of example and is not limited to the depictions in the accompanying drawings, in which the same reference numerals refer to similar or identical elements. The elements in the drawings are not necessarily shown to scale. The features of the various examples shown can be combined, provided they are not mutually exclusive. Fig. Figure 1 shows a side sectional view of a sensor device 100 according to the disclosure. Fig. Figure 2 shows a top view of a sensor device 200 according to the disclosure. Fig. Figure 3 shows a top view of a sensor device 300 according to the disclosure. Fig. Figure 4 shows a perspective view of a sensor device 400 according to the disclosure. Fig. Figure 5 shows a side sectional view of a sensor device 500 according to the disclosure. Fig. 6 contains the Fig. 6A and Fig. 6B, which show a top view or a bottom view of a sensor device 600 according to the disclosure. Fig. 7 contains the Fig. 7A and Fig. 7B, which show a top view or a bottom view of a sensor device 700 according to the disclosure. Fig. 8 contains the Fig. 8A and Fig. 8B, which show a top view or a bottom view of a sensor device 800 according to the disclosure. Fig. 9 contains the Fig. 9A and Fig. 9B, which show a top view or a bottom view of a sensor device 900 according to the disclosure. Fig. Figure 10 illustrates a concept for measuring an electric current using a sensor device 1000 according to the disclosure. Fig. Figure 11 shows a flowchart of a method for manufacturing a sensor device according to the disclosure. DETAILED DESCRIPTION

[0010] The sensor device 100 of the Fig. 1 can have a conductor 2 with a recess 4, wherein the conductor 2 can be designed to carry an electric current (or measuring current) 6. The conductor 2 can also be referred to as a busbar in some cases. Furthermore, the sensor device 100 can have a magnetic field sensor chip 8, which can be arranged in the recess 4 on a mounting surface 10 of the conductor 2 and can be designed to detect a magnetic field generated by the electric current 6. The conductor 2 and the magnetic field sensor chip 8 can be galvanically isolated from each other. The sensor device 100 can be designed to measure the magnitude of the electric current 6. An exemplary non-restrictive measurement concept is described in connection with the Fig. 10 described.

[0011] The magnetic field sensor chip 8 can contain or be made of any semiconductor material, for example, silicon. The magnetic field sensor chip 8 can be an integrated circuit, so it can also be referred to as a magnetic field sensor IC. In the example shown, the magnetic field sensor chip 8 can be, in particular, an unpackaged bare die, which does not necessarily have to be housed in a package but can be used without one. In this description, the terms "die," "chip," "semiconductor die," and "semiconductor chip" can be used interchangeably. In the example shown, the magnetic field sensor chip 8 can be attached to the mounting surface 10 of the conductor 2 by an adhesive layer 18. The adhesive layer 18 can be electrically insulating to provide galvanic isolation between the conductor 2 and the magnetic field sensor chip 8.In one example, the adhesive layer 18 can be designed as an adhesive layer or adhesive film.

[0012] The magnetic field sensor chip 8 can have one or more electrical contacts 12, which can be arranged on a first surface 14A of the magnetic field sensor chip 8. The first surface 14A can, in some examples, be referred to as the front of the magnetic field sensor chip 8. In the case shown, the first surface 14A with the electrical contacts 12 arranged therein can face away from the mounting surface 10 of the conductor 2. The electrical contacts 12 can be electrically coupled to internal electronic structures of the magnetic field sensor chip 8, i.e., the electronic structures can be electrically contacted via the electrical contacts 12. Furthermore, in the case shown, the magnetic field sensor chip 8 can be free of electrical contacts on a second surface 14B of the magnetic field sensor chip 8, which faces the mounting surface 10. The second surface 14B can, in some examples, be referred to as the back of the magnetic field sensor chip 8.

[0013] The magnetic field sensor chip 8 can have one or more sensor elements 16 arranged on its first surface 14A. In the illustrated case, an exemplary and non-limiting number of two sensor elements 16 is shown. The magnetic field sensor chip 8 can, for example, be a differential magnetic field sensor chip, the operation of which is related to the Fig. as described in section 10. Each of the sensor elements 16 can be designed to detect a magnetic field present at the location of the respective sensor element 16. It should be noted that the magnetic field sensor chip 8 and its sensor elements 16 need not be limited to a specific or single sensor technology. The sensor elements 16 can, for example, be designed as Hall sensor elements, magnetoresistive sensor elements, vertical Hall sensor elements, or fluxgate sensor elements. A magnetoresistive xMR sensor element can be an AMR (anisotropic magneto-resistive) sensor element, a GMR (giant magneto-resistive) sensor element, or a TMR (tunnel magneto-resistive) sensor element. In the example shown, the respective sensor element 16 can, in particular, be designed to detect a magnetic field component extending perpendicular to the front face 14A of the magnetic field sensor chip 8.In this context, the respective sensor element 16 can, for example, be sensitive in the z-direction, i.e., designed to detect a magnetic field component in the z-direction. Optionally, the sensor elements 16 can also be sensitive with respect to other spatial directions. Measurement signals based on the detected magnetic field components can be output by the sensor device 100 to external components (not shown), for example via the electrical contacts 12.

[0014] In the example shown, both the electrical contacts 12 and the sensor elements 16 can be located on the first surface 14A, which faces away from the mounting surface 10. In other examples, at least one (or all) of the sensor elements 16 can be located on the second surface 14B of the magnetic field sensor chip 8, which faces the mounting surface 10. In such a case, the magnetic field sensor chip 8 can have one or more electrical connections (not shown) that extend from the first surface 14A to the second surface 14B of the magnetic field sensor chip 8 and electrically connect sensor elements 16 on the back 14B to electrical contacts 12 on the front 14A. Measurement signals provided by the sensor elements 16 can thus be transmitted downwards to the electrical contacts 12 via these electrical connections.For example, such electrical connections can be through-silicon vias (TSVs) that can pass through the semiconductor material of the magnetic field sensor chip 8. If the magnetic field sensor chip 8 is embedded in an encapsulation material, the electrical connections can extend at least partially through the encapsulation material. With an arrangement of the sensor elements 16 on the back side 14B, the sensor elements 16 can be positioned closer to the current conductor 2, where the magnetic field generated by the electric current 6 can be stronger, thus enabling improved measurement results. On the other hand, the additional electrical connections required (e.g., TSVs) can complicate and / or increase the cost of manufacturing the sensor device 100.

[0015] The conductor 2 can be made of a material that, on the one hand, exhibits good electrical conductivity to adequately conduct the electric current 6. On the other hand, the material of the conductor 2 can also be suitable for facilitating the cost-effective and efficient production of the recess 4. For example, the conductor 2 can be deep-drawn and / or stamped to form the recess 4; that is, the material can, for instance, provide suitable elasticity for carrying out such processes. In some examples, the conductor 2 can contain or be made of copper, copper alloys, aluminum, aluminum alloys, nickel silver, or similar materials.

[0016] The conductor 2 can be in the form of a bowl or basin, with the magnetic field sensor chip 8 being arranged on a base surface of the bowl or basin. In the example shown, said base surface of the bowl or basin can correspond to or include the mounting surface 10 of the conductor 2. The magnetic field sensor chip 8 can be arranged completely within the recess 4 of the conductor 2. The magnetic field sensor chip 8 can be recessed in the z-direction along its entire height within the recess 4. A dimension of the recess 4 in the z-direction can be larger than a dimension of the magnetic field sensor chip 8 (with or without the electrical contacts 12) in the z-direction. The conductor 2 can extend over the rear surface 14B of the magnetic field sensor chip 8 and at least partially cover it. In this context, the conductor 2 can also be referred to as a cover or lid.The current conductor 2 and at least one side surface of the magnetic field sensor chip 8 can be spaced apart from each other, in particular to prevent electrical arcing between these components. Optionally, an electrically insulating material (in the . Fig. (1 not shown) between the current conductor 2 and at least one side surface of the magnetic field sensor chip 8 in the recess 4 to minimize the risk of electrical flashovers.

[0017] The current conductor 2 and the electrical contacts 12 of the magnetic field sensor chip 8 can be arranged essentially in a common plane, which can also be referred to as the mounting plane (or mounting surface) of the sensor device 100. In particular, a current input 20 of the current conductor 2, a current output 22 of the current conductor 2, and at least one electrical contact 12 of the magnetic field sensor chip 8 can be arranged essentially in the same plane. In this context, the sensor device 100 can, in particular, be an SMD (surface-mounted device). In the example shown, the sensor device 100 (or the current conductor 2 and / or the electrical contacts 12) can be mechanically and electrically connected to a printed circuit board (PCB) 24.More precisely, the current input 20 of the current conductor 2, the current output 22 of the current conductor 2, and at least one electrical contact 12 of the magnetic field sensor chip 8 can be mechanically and electrically connected to electrically conductive structures 26 on the top surface of the circuit board 24. In the non-restrictive example shown, a solder material 28 can be used for the mechanical and / or electrical connection. At the corresponding contact points, the current conductor 2 and / or the electrical contacts 12 can be solderable or have solderable surfaces.

[0018] The sensor device 200 of the Fig. 2 may include some or all features of the sensor device 100 of the Fig. 1. For the sake of simplicity, in the Fig. 2 not all components of the sensor device 200 are shown, as they are, for example, in the Fig. Figure 1 shows the following examples. In the example shown, the magnetic field sensor chip 8 can be a differential magnetic field sensor chip with a first Hall sensor element 16A and a second Hall sensor element 16B. In the non-limiting example shown, the sensor elements 16A, 16B can be arranged on a surface of the magnetic field sensor chip 8 facing the mounting surface of the busbar 2. In other examples, the sensor elements 16A, 16B can be arranged on a surface of the magnetic field sensor chip 8 facing away from the mounting surface of the busbar 2, as is the case, for example, in connection with the Fig. As shown and described in Figure 1, the two Hall sensor elements 16A, 16B can be sensitive in a direction perpendicular to the mounting surface 10 of the conductor 2 (i.e., for example, perpendicular to the chip surface in the z-direction). The conductor 2 can have two slots 30A, 30B on opposite sides of the conductor 2. The two Hall sensor elements 16A, 16B can be at least partially (and in particular, completely) uncovered by the conductor 2 at the locations of the two slots 30A, 30B. In the example shown, the two slots 30A, 30B can be offset from each other (for example, with respect to the x-direction). The conductor 2 can thus be S-shaped, and an electric current flowing through the conductor 2 can have an S-shaped path.

[0019] The sensor device 300 of the Fig. 3 may have some or all of the features of the sensor devices described above. For the sake of simplicity, in the Fig. 3 Not all components of the sensor device 300 are shown, as they are, for example, in the Fig. 1 are shown. In contrast to, for example, the Fig. 2. The two slots 30A, 30B of the sensor device 300 can be arranged aligned with each other (for example, with respect to the x-direction). The conductor 2 can be I-shaped, and an electric current flowing through the conductor 2 can have a substantially straight path (for example, in the x-direction).

[0020] The sensor device 400 of the Fig. 4 may exhibit some or all of the features of previously described sensor devices. For the sake of simplicity, in the Fig. 4 Not all components of the sensor device 400 are shown, as they are, for example, in the Fig. Figure 1 shows the magnetic field sensor chip 8. In the example shown, the magnetic field sensor chip 8 can be a differential magnetic field sensor chip with a first Hall sensor element 16A and a second Hall sensor element 16B. The two Hall sensor elements 16A, 16B can be sensitive in a perpendicular direction (i.e., for example, perpendicular to the chip surface in the z-direction). The current conductor 2 can run between the two Hall sensor elements 16A, 16B. The current conductor 2 can be U-shaped and run around the first Hall sensor element 16A. Accordingly, an electric current 6 flowing through the current conductor 2 can also have a U-shaped path.

[0021] The sensor device 500 of the Fig. 5 may have some or all of the features of the sensor devices described above. In particular, sensor device 500 may be similar to sensor device 100. Fig. 1. be at least partially similar and have corresponding components. Details regarding Fig. 1 can therefore also be used for the Fig. Section 5 applies and is not repeated here for the sake of simplicity. In the example shown, the magnetic field sensor chip 8 can be encapsulated in a housing (or package) 32. The surface 14A of the magnetic field sensor chip 8 facing away from the mounting surface 10 of the conductor 2 can be uncovered by the housing 32 or its material. In the example shown, the lower surface of the magnetic field sensor chip 8 and the lower surface of the housing 32 can essentially lie in a common plane. The housing 32 with the magnetic field sensor chip 8 embedded therein can be arranged or attached to the mounting surface 10 of the conductor 2. Optionally, an adhesion-promoting layer (not shown) can be arranged between the housing 32 and the mounting surface 10, as for example in connection with the Fig. 1 described.

[0022] The housing or encapsulation material 32 may, in particular, contain or be made of an electrically insulating material. For example, the housing 32 may contain or be made of at least one of the following materials: a mold compound, an epoxy, a filled epoxy, a glass fiber-filled epoxy, an imide, a thermoplastic, a thermosetting polymer, a polymer mixture, a laminate, or the like. The housing 32 may, for example, be formed based on at least one of the following processes: compression molding, injection molding, powder molding, liquid molding, map molding, laminating, or the like. The housing 32 may be designed to protect the encapsulated components of the sensor device 500 from threats such as mechanical shocks, chemical contamination, exposure to light, etc.The electrically insulating material of the housing 32 can be arranged, at least partially, between one or more surfaces (in particular one or more side faces) of the magnetic field sensor chip 8 and the current conductor 2, particularly to prevent electrical arcing between these components. The sensor device 500 can also be referred to as a sensor package.

[0023] The sensor device 600 of the Fig. 6 may have some or all of the features of previously described sensor devices. For example, sensor device 600 may be one of sensor devices 100 and 500. Fig. 1 and Fig. 5 will be similar. Fig. 6A and Fig. Figure 6B shows a top view and a bottom view of the sensor device 600. In the example shown, the magnetic field sensor chip 8 can be a differential magnetic field sensor chip with a first Hall sensor element 16A and a second Hall sensor element 16B. In the non-limiting example shown, the sensor elements 16A, 16B can be arranged on a surface of the magnetic field sensor chip 8 facing the mounting surface of the busbar 2. In other examples, the sensor elements 16A, 16B can be arranged on a surface of the magnetic field sensor chip 8 facing away from the mounting surface of the busbar 2, as is the case, for example, in connection with the Fig. 1 and Fig. Figure 5 shows and describes the two Hall sensor elements 16A, 16B, which can be sensitive in a direction perpendicular to the mounting surface 10 of the conductor 2 (i.e., for example, perpendicular to the chip surface in the z-direction). The conductor 2 can have two slots 30A, 30B on opposite sides of the conductor 2. The two Hall sensor elements 16A, 16B can be at least partially (and in particular, completely) uncovered by the conductor 2 at the locations of the two slots 30A, 30B. In the example shown, the two slots 30A, 30B can be aligned with each other (for example, with respect to the x-direction). The conductor 2 can be I-shaped, and an electric current 6 flowing through the conductor 2 can have a substantially straight path (for example, in the x-direction). The conductor 2 can, for example, be connected to the conductor 2 of the Fig. 3 be similar.

[0024] In the bottom view of the Fig. Figure 6B shows an exemplary and non-limiting number of three electrical contacts 12 of the magnetic field sensor chip 8. One of the electrical contacts 12 may, for example, be configured to output a (particularly analog) measurement signal from the magnetic field sensor chip 8. The other two electrical contacts may, for example, provide a connection for a supply voltage and a ground connection. However, it should be noted that the number and function of the electrical contacts 12 may differ in other examples and may depend on the individual design of the magnetic field sensor chip 8 under consideration.

[0025] The sensor device 700 of the Fig. 7 may exhibit some or all of the features of previously described sensor devices. Fig. 7A and Fig. Figure 7B shows a top view and a bottom view of the sensor device 700. In contrast to the Fig. 6. The two slots 30A, 30B of the sensor device 700 formed in the conductor 2 can be offset from each other (for example, with respect to the x-direction). The conductor 2 can thus be S-shaped, and an electric current 6 flowing through the conductor 2 can have an S-shaped path. The conductor 2 can, for example, be connected to the conductor 2 of the Fig. 2 be similar.

[0026] The sensor device 800 of the Fig. 8 may exhibit some or all of the features of previously described sensor devices. Fig. 8A and Fig. Figure 8B shows a top view and a bottom view of the sensor device 800. In the example shown, the magnetic field sensor chip 8 can contain a single magnetoresistive sensor element 16 (for example, an AMR sensor element, a GMR sensor element, or a TMR sensor element). The magnetoresistive sensor element 16 can be sensitive in a direction parallel to the mounting surface 10 of the current conductor 2 (for example, laterally to the chip surface in the xy-plane). In the top view of the Fig. 8A the magnetoresistive sensor element 16 may be (especially completely) covered by the current conductor 2 and is therefore shown with a dashed line.

[0027] The sensor device 900 of the Fig. 9 may exhibit some or all of the features of previously described sensor devices. Fig. 9A and Fig. Figures 9B show a top view and a bottom view of the sensor device 900. In the example shown, the magnetic field sensor chip 8 can be a differential magnetic field sensor chip with a first magnetoresistive sensor element 16A and a second magnetoresistive sensor element 16B (for example, AMR sensor elements, GMR sensor elements, or TMR sensor elements). The magnetoresistive sensor elements 16A, 16B can each be sensitive in a direction parallel to the mounting surface 10 of the current conductor 2 (for example, laterally to the chip surface in the xy-plane). From the top view of the Fig. As shown in Figure 9A, the first magnetoresistive sensor element 16A can be (in particular, completely) covered by the current conductor 2. The second magnetoresistive sensor element 16B can be (in particular, completely) uncovered by the current conductor 2.

[0028] The sensor element 16A, located below the conductor 2, can measure a comparatively large value of the lateral magnetic field component to be detected, while the sensor element 16B, located next to or not covered by the conductor 2, can measure a very small value of the lateral magnetic field component to be detected. Therefore, the measurement by sensor element 16B contributes a comparatively small share to the overall measurement result. However, by calculating the difference between the two values ​​detected by sensor elements 16A and 16B, homogeneous magnetic stray fields can be eliminated from the overall measurement result, as is the case, for example, in connection with the Fig. 10 is described.

[0029] In the Fig. Figure 10 shows an exemplary, non-restrictive concept for measuring an electric current using a sensor device 1000 according to the disclosure. The sensor device 1000 can have a current conductor 2 and a magnetic field sensor chip 8 with two sensor elements 16A, 16B. A magnetic field H can be generated by an electric current 6 flowing in the y-direction. c in the xz-plane. In the example shown, for the sake of simplicity, only a single field line 34 of the induced magnetic field H is shown. c shown. In addition to the induced magnetic field H c can a magnetic stray field H s (not shown). This can in particular be a homogeneous (or spatially homogeneous) magnetic stray field H. sThis process, due to its homogeneity, can be essentially identical at the locations of the two sensor elements 16A and 16B. Effectively, a first magnetic field H1 and a second magnetic field H2 can then be present at the positions of the first sensor element 16A and the second sensor element 16B, respectively, each resulting from the vector sum of the magnetic field H induced by the electric current 6. c and the magnetic stray field H s result.

[0030] The first sensor element 16A can be designed to measure the z-component H 1z to detect the first magnetic field H1 and output a corresponding signal. The following may apply: H1z=Hcz+Hsz

[0031] Similarly, the second sensor element 16B can be designed to measure the z-component H 2z to detect the second magnetic field H2 and output a corresponding signal. The following may apply: H2z=−Hcz+Hsz

[0032] It should be noted that the z-component of the induced magnetic field H c in equation (2) it must be taken into account with a minus sign (see the arrows pointing upwards and downwards respectively for sensor elements 16A, 16B). The two sensor elements 16A, 16B can each be designed to measure the magnitude and sign of the magnetic field components H 1z or H 2z to record.

[0033] By calculating the difference between the detected components or by generating a difference signal between the two output signals, the following can be obtained: H1z−H2z=Hcz+Hsz−(−Hcz+Hsz)=2Hcz

[0034] Equation (3) shows that the influence of the homogeneous magnetic stray field H s on the two first components H 1z and H 2z when calculating the difference between the two recorded first components H 1z and H 2z can be compensated for.

[0035] A proportionality can be established between the strength I of the electric current 6 and the difference formed. I~Hcz The measured current I can thus be determined by the sensor device 1000 based on the difference between the two detected magnetic field components. The sensor device 1000 can therefore also be referred to as a current sensor. The proportionality factor required for this can be determined, for example, during the calibration of the sensor device 1000 and then taken into account.

[0036] The sensor devices described herein according to the disclosure may be technically superior to conventional sensor devices and may, among other things, provide the properties described below.

[0037] Sensor devices according to the disclosure can be easily constructed from a conductor and a magnetic field sensor chip mounted therein. Some elements used in conventional sensor devices (e.g., bond wires) can be omitted. In the case of an unpackaged bare chip, no additional encapsulation of the magnetic field sensor chip is required. Compared to conventional sensor devices, the design of the sensor devices described herein can therefore be greatly simplified, resulting in cost reductions in production.

[0038] As shown in the examples described above, there is considerable freedom in the design of the conductor. Various geometric shapes of the conductor can be easily achieved, for example through a deep-drawing and / or stamping process.

[0039] Sensor devices according to the disclosure are not limited to a specific sensor technology, but can be implemented with different magnetic field sensor chip types (e.g. xMR, Hall).

[0040] The magnetic field sensor chips contained in the sensor devices described herein can, in particular, have a low profile, thereby enabling a small distance between the current conductor and the sensor elements of the magnetic field sensor chips. This allows the sensor elements to be placed in areas of high magnetic field strength, so that improved measurement results can be achieved with the sensor devices according to the disclosure.

[0041] Fig.Figure 11 shows a method for manufacturing a sensor device according to the disclosure. The method can be used, for example, to manufacture the sensor devices described above. The method is illustrated in a general way to qualitatively clarify aspects of the present disclosure. The method can be extended to include one or more aspects that are described in connection with other examples discussed herein.

[0042] In step 36, a conductor with a recess can be formed, the conductor being designed to carry an electric current. In step 38, a magnetic field sensor chip can be arranged in the recess on a mounting surface of the conductor, the magnetic field sensor chip being designed to detect a magnetic field generated by the electric current. The conductor and the magnetic field sensor chip can be galvanically isolated from each other. EXAMPLES

[0043] The following describes sensor devices according to the disclosure and associated manufacturing processes by means of examples.

[0044] Example 1 is a sensor device comprising: a current conductor with a recess, wherein the current conductor is designed to carry an electric current; and a magnetic field sensor chip, which is arranged in the recess on a mounting surface of the current conductor and is designed to detect a magnetic field generated by the electric current, wherein the current conductor and the magnetic field sensor chip are galvanically isolated from each other.

[0045] Example 2 is a sensor device according to Example 1, wherein the current conductor has the shape of a bowl or tub and the magnetic field sensor chip is arranged on a bottom surface of the bowl or tub.

[0046] Example 3 is a sensor device according to Example 1 or 2, wherein the magnetic field sensor chip is arranged completely in the recess of the current conductor.

[0047] Example 4 is a sensor device according to one of the preceding examples, wherein the current conductor is deep-drawn and / or stamped.

[0048] Example 5 is a sensor device according to one of the preceding examples, wherein: the magnetic field sensor chip comprises at least one electrical contact which is arranged at a first surface of the magnetic field sensor chip facing away from the mounting surface, and the magnetic field sensor chip is free of electrical contacts at a second surface of the magnetic field sensor chip facing the mounting surface.

[0049] Example 6 is a sensor device according to one of the preceding examples, wherein the magnetic field sensor chip comprises at least one sensor element which is arranged at a first surface of the magnetic field sensor chip facing away from the mounting surface.

[0050] Example 7 is a sensor device according to one of Examples 1 to 5, wherein the magnetic field sensor chip comprises at least one sensor element which is arranged on a second surface of the magnetic field sensor chip facing the mounting surface.

[0051] Example 8 is a sensor device according to Example 5 and 7, further comprising: an electrical connection which extends from the first surface of the magnetic field sensor chip to the second surface of the magnetic field sensor chip and electrically connects the at least one sensor element to the at least one electrical contact.

[0052] Example 9 is a sensor device according to one of the preceding examples, wherein a current input of the current conductor, a current output of the current conductor and at least one electrical contact of the magnetic field sensor chip are arranged in the same plane.

[0053] Example 10 is a sensor device according to Example 9, further comprising: a printed circuit board, wherein the current input of the current conductor, the current output of the current conductor and the at least one electrical contact of the magnetic field sensor chip are mechanically and electrically connected to the printed circuit board.

[0054] Example 11 is a sensor device according to one of the preceding examples, wherein the sensor device is an SMD device.

[0055] Example 12 is a sensor device according to one of the preceding examples, wherein the current conductor and at least one side surface of the magnetic field sensor chip are spaced apart from each other.

[0056] Example 13 is a sensor device according to one of the preceding examples, wherein the magnetic field sensor chip is an unpackaged bare chip.

[0057] Example 14 is a sensor device according to any one of Examples 1 to 12, wherein: the magnetic field sensor chip is encapsulated in a housing, a surface of the magnetic field sensor chip facing away from the mounting surface is uncovered by the housing, and the housing is arranged on the mounting surface of the current conductor.

[0058] Example 15 is a sensor device according to one of the preceding examples, wherein: the magnetic field sensor chip is a differential magnetic field sensor chip with a first Hall sensor element and a second Hall sensor element, wherein the two Hall sensor elements are sensitive in a direction perpendicular to the mounting surface, the current conductor has two slots at opposite sides of the current conductor, and the two Hall sensor elements are at least partially uncovered by the current conductor at the locations of the two slots.

[0059] Example 16 is a sensor device according to Example 15, wherein the two slots are arranged aligned with each other and the conductor is I-shaped.

[0060] Example 17 is a sensor device according to Example 15, wherein the two slots are arranged offset from each other and the current conductor is S-shaped.

[0061] Example 18 is a sensor device according to one of Examples 1 to 14, wherein: the magnetic field sensor chip is a differential magnetic field sensor chip with a first Hall sensor element and a second Hall sensor element, the two Hall sensor elements are sensitive in a direction perpendicular to the mounting surface, and the current conductor is U-shaped and runs around one of the two Hall sensor elements.

[0062] Example 19 is a sensor device according to any one of Examples 1 to 14, wherein: the magnetic field sensor chip comprises a single magnetoresistive sensor element which is sensitive in a direction parallel to the mounting surface and is completely covered by the current conductor.

[0063] Example 20 is a sensor device according to any one of Examples 1 to 14, wherein: the magnetic field sensor chip is a differential magnetic field sensor chip with a first magnetoresistive sensor element and a second magnetoresistive sensor element, wherein the two magnetoresistive sensor elements are sensitive in a direction parallel to the mounting surface, the first magnetoresistive sensor element is covered by the current conductor, and the second magnetoresistive sensor element is uncovered by the current conductor.

[0064] Example 21 is a method for manufacturing a sensor device, the method comprising: forming a current conductor with a recess, wherein the current conductor is designed to carry an electric current; and arranging a magnetic field sensor chip in the recess on a mounting surface of the current conductor, wherein the magnetic field sensor chip is designed to detect a magnetic field generated by the electric current, wherein the current conductor and the magnetic field sensor chip are galvanically isolated from each other.

[0065] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and devices. A person skilled in the art will be able to implement various arrangements which, although not explicitly described or shown here, embody the principles of the invention and are included within its scope. Furthermore, all examples and embodiments outlined in this document are, in principle and expressly, intended only for explanatory purposes, to help the reader understand the principles of the proposed methods and devices. Moreover, all statements in this document that describe principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include their equivalents.

Claims

[1] Sensor device comprising: a conductor (2) with a recess (4), wherein the conductor (2) is designed to carry an electric current; and a magnetic field sensor chip (8) which is arranged in the recess (4) on a mounting surface (10) of the current conductor (2) and is designed to detect a magnetic field generated by the electric current, wherein the magnetic field sensor chip (8) is an unpackaged bare chip, wherein the electrical conductor (2) and the magnetic field sensor chip (8) are galvanically isolated from each other. [2] Sensor device according to claim 1, wherein the current conductor (2) has the form of a bowl or tray and the magnetic field sensor chip (8) is arranged on a bottom surface of the bowl or tray. [3] Sensor device according to claim 1 or 2, wherein the magnetic field sensor chip (8) is arranged completely in the recess (4) of the current conductor (2). [4] Sensor device according to one of the preceding claims, wherein the current conductor (2) is deep-drawn and / or stamped. [5] Sensor device according to one of the preceding claims, wherein: the magnetic field sensor chip (8) comprises at least one electrical contact (12) which is arranged at a first surface (14A) of the magnetic field sensor chip (8) facing away from the mounting surface (10), and the magnetic field sensor chip (8) is free of electrical contacts at a second surface (14B) of the magnetic field sensor chip (8) facing the mounting surface (10). [6] Sensor device according to one of the preceding claims, wherein the magnetic field sensor chip (8) comprises at least one sensor element (16) which is arranged at a first surface (14A) of the magnetic field sensor chip (8) facing away from the mounting surface (10). [7] Sensor device according to one of claims 1 to 5, wherein the magnetic field sensor chip (8) comprises at least one sensor element (16) which is arranged at a second surface (14B) of the magnetic field sensor chip (8) facing the mounting surface (10). [8] Sensor device according to claims 5 and 7, further comprising: an electrical connection which runs from the first surface (14A) of the magnetic field sensor chip (8) to the second surface (14B) of the magnetic field sensor chip (8) and electrically connects the at least one sensor element (16) with the at least one electrical contact (12). [9] Sensor device according to one of the preceding claims, wherein a current input (20) of the current conductor (2), a current output (22) of the current conductor (2) and at least one electrical contact (12) of the magnetic field sensor chip (8) are arranged in the same plane. [10] Sensor device according to claim 9, further comprising: a printed circuit board (24) wherein the current input (20) of the current conductor (2), the current output (22) of the current conductor (2) and the at least one electrical contact (12) of the magnetic field sensor chip (8) are mechanically and electrically connected to the printed circuit board (24). [11] Sensor device according to one of the preceding claims, wherein the sensor device is an SMD device. [12] Sensor device according to one of the preceding claims, wherein the current conductor (2) and at least one side surface of the magnetic field sensor chip (8) are spaced apart from each other. [13] Sensor device according to one of the preceding claims, wherein: the magnetic field sensor chip (8) is a differential magnetic field sensor chip with a first Hall sensor element (16A) and a second Hall sensor element (16B), wherein the two Hall sensor elements (16A, 16B) are sensitive in a direction perpendicular to the mounting surface (10), the conductor (2) has two slots (30A, 30B) on opposite sides of the conductor (2), and the two Hall sensor elements (16A, 16B) at the locations of the two slots (30A, 30B) are at least partially uncovered by the conductor (2). [14] Sensor device according to claim 13, wherein the two slots (30A, 30B) are arranged aligned with each other and the conductor (2) is I-shaped. [15] Sensor device according to claim 13, wherein the two slots (30A, 30B) are arranged offset from each other and the current conductor (2) is S-shaped. [16] Sensor device according to any one of claims 1 to 12, wherein: the magnetic field sensor chip (8) is a differential magnetic field sensor chip with a first Hall sensor element (16A) and a second Hall sensor element (16B), the two Hall sensor elements (16A, 16B) are sensitive in a direction perpendicular to the mounting surface (10), and the current conductor (2) is U-shaped and runs around one of the two Hall sensor elements (16A, 16B). [17] Sensor device according to any one of claims 1 to 12, wherein: The magnetic field sensor chip (8) comprises a single magnetoresistive sensor element (16) which is sensitive in a direction parallel to the mounting surface (10) and is completely covered by the current conductor (2). [18] Sensor device according to any one of claims 1 to 12, wherein: the magnetic field sensor chip (8) is a differential magnetic field sensor chip with a first magnetoresistive sensor element (16A) and a second magnetoresistive sensor element (16B), wherein the two magnetoresistive sensor elements (16A, 16B) are sensitive in a direction parallel to the mounting surface (10), the first magnetoresistive sensor element (16A) is covered by the current conductor (2), and the second magnetoresistive sensor element (16B) is uncovered by the current conductor (2). [19] Method for manufacturing a sensor device, the method comprising: Forming a conductor (2) with a recess (4), wherein the conductor (2) is designed to carry an electric current; and Arranging a magnetic field sensor chip (8) in the recess (4) on a mounting surface (10) of the current conductor (2), wherein the magnetic field sensor chip (8) is designed to detect a magnetic field generated by the electric current, wherein the magnetic field sensor chip (8) is an unpackaged bare chip, wherein the electrical conductor (2) and the magnetic field sensor chip (8) are galvanically isolated from each other. [20] Sensor device comprising: a conductor (2) with a recess (4), wherein the conductor (2) is designed to carry an electric current; and a magnetic field sensor chip (8) which is arranged in the recess (4) on a mounting surface (10) of the current conductor (2) and is designed to detect a magnetic field generated by the electric current, wherein the magnetic field sensor chip (8) is encapsulated in a housing (32), a surface (14A) of the magnetic field sensor chip (8) facing away from the mounting surface (10) is uncovered by the housing (32), and the housing (32) is arranged on the mounting surface (10) of the current conductor (2), wherein the electrical conductor (2) and the magnetic field sensor chip (8) are galvanically isolated from each other.

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