Semiconductor component, method for manufacturing the same, and semiconductor module

Abstract

Semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) that has the following: - a thin semiconductor element (1) having a front electrode (2) on a front side of the thin semiconductor element (1) and a back electrode (3) on a back side of the thin semiconductor element (1); - a metallic element (4, 8) formed on at least one side, the front of the front electrode (2) and / or the back of the rear electrode (3), wherein the metallic element (4, 8) has a thickness equal to or greater than the thickness of the thin semiconductor element (1); and - a resin element (5) which is in contact with a lateral side surface of the metallic element (4, 8) from a front of the metallic element (4, 8) to a back of the metallic element (4, 8), and with a lateral side surface of the back electrode (3) and surrounds the circumference of the metallic element (4, 8), wherein the resin element (5) covers an outer circumferential region of at least one side, the front of the thin semiconductor element (1) and / or the back of the thin semiconductor element (1), in which no back electrode (3) is formed, and wherein the resin element (5) is in contact with the back of the thin semiconductor element (1), and wherein a region of the front of the thin semiconductor element (1) is exposed, and wherein the thickness of the front electrode (2) and the thickness of the back electrode (3) is smaller than the thickness of the metallic element (4, 8).

Description

TECHNICAL FIELD

[0001] The present invention relates to a structure of a semiconductor device, a method for producing the same, and a semiconductor module using the semiconductor device. STATE OF THE ART

[0002] A conventional semiconductor device is known in which a semiconductor element has electrodes on both sides and is sealed with resin such that the resin surrounds the periphery of the semiconductor element and the electrodes, with the electrodes exposed on both sides of the semiconductor element (e.g., Patent Document 1). Electrically conductive cooling plates are provided in direct contact with the surfaces of the electrodes on both sides of the semiconductor element under pressure, allowing the sides to be cooled.

[0003] Patent Document 2 relates to a flat semiconductor device, particularly a flat semiconductor device that enables low cost and high reliability, and a converter using the flat semiconductor device.

[0004] Patent Document 3 relates to a method for manufacturing a semiconductor device and a semiconductor device.

[0005] Patent Document 4 relates to a method for manufacturing a power semiconductor device having metallization.

[0006] Patent Document 5 relates to a semiconductor device and a method for manufacturing a semiconductor device, particularly to a semiconductor device including a power semiconductor element and a method for manufacturing a semiconductor device.

[0007] Patent Document 6 generally relates to semiconductor packages, and more particularly to the packaging of a semiconductor chip and an inductor. STATE OF THE ART Patent Document 1: Japanese Patent Application Laid-Open No. JP 5 126 278 A Patent document 2: JP 2000 - 58 717 A Patent document 3: US 2014 / 0 327 071 A1 Patent document 4: US 2013 / 0 037 954 A1 Patent document 5: US 2011 / 0 037 166 A1 Patent document 6: US 2011 / 0 298 088 A1 SUMMARY OF THE INVENTION Problems to be solved by the invention

[0008] However, in the conventional semiconductor device, since the edge (periphery) of the thin semiconductor element is directly supported by the resin, an undesirable force may be exerted on the semiconductor element during transportation, resulting in chipping of the semiconductor element.

[0009] The present invention has been developed to solve this problem and aims to provide a semiconductor device free from chipping during transportation in a thin semiconductor element. Means to solve the problems

[0010] A semiconductor device according to the present invention is defined in claim 1. A method for manufacturing a semiconductor device according to the present invention is defined in claim 9. A semiconductor module according to the present invention is defined in claim 11. Effect of the invention

[0011] With the present invention, the metallic element and the resin element can prevent the thin semiconductor element from being subjected to direct stress during handling of the semiconductor element. This can prevent chipping of the thin semiconductor element. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view of a semiconductor device in Embodiment 1 of the present invention; Fig. 2 is a schematic cross-sectional view of a semiconductor device in Embodiment 1 of the present invention; Fig. 3 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention; Fig. 4 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 5 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 6 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 7 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 8 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 9 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 10 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention; Fig. 11 is a schematic cross-sectional view of a semiconductor device in Embodiment 1 of the present invention; Fig. 12 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention; Fig. 13 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention; Fig. 14 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention; Fig. 15 is a schematic cross-sectional view showing a semiconductor module in Embodiment 1 of the present invention; Fig. 16 is a schematic plan view of a semiconductor device in Embodiment 2 of the present invention; Fig. 17 is a schematic cross-sectional view of a semiconductor device in Embodiment 2 of the present invention; Fig. 18 is a schematic cross-sectional view of another semiconductor device in Embodiment 2 of the present invention; Fig. 19 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 20 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 21 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 22 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 23 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 24 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention; Fig. 25 is a schematic plan view of a semiconductor device in Embodiment 3 of the present invention; Fig. 26 is a schematic cross-sectional view of a semiconductor device in Embodiment 3 of the present invention; Fig. 27 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention; Fig. 28 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention; Fig. 29 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention; Fig. 30 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention; Fig. 31 is a schematic plan view of a semiconductor device in Embodiment 4 of the present invention; Fig. 32 is a schematic cross-sectional view of a semiconductor device in Embodiment 4 of the present invention; Fig. 33 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention; Fig. 34 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention; Fig. 35 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention; Fig. 36 is a schematic cross-sectional view of another semiconductor device in Embodiment 4 of the present invention; Fig. 37 is a schematic cross-sectional view of another semiconductor device in Embodiment 4 of the present invention; Fig. 38 is a schematic cross-sectional view of a semiconductor device in Embodiment 5 of the present invention, and Fig. 39 is a schematic cross-sectional view of a semiconductor device in Embodiment 6 of the present invention. DESCRIPTION OF THE EMBODIMENTS

[0012] First, general configurations of semiconductor devices of the present invention will be described with reference to the drawings. The drawings are schematic diagrams and do not reflect the exact dimensions of the components. Components with the same designation are identical or corresponding components, and this will be understood throughout the description.

[0013] Furthermore, when a material such as copper or aluminum is mentioned, the material also includes a copper alloy or an aluminum alloy, which may contain other additives, unless otherwise stated. Embodiment 1

[0014] Fig. 1 is a schematic plan view of a semiconductor device in Embodiment 1 of the present invention. Fig. 2 is a schematic cross-sectional view of a semiconductor device in Embodiment 1 of the present invention. Fig. 3 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention. Fig. Figure 2 is a schematic cross-section along the dotted line AA in Fig. 1. In the drawings, a semiconductor device 100 includes a semiconductor element 1, a front electrode 2, a back electrode 3, a thick-film electrode 4 (metallic element), and a resin element 5. Similarly, a semiconductor device 200 includes a semiconductor element 1, a front electrode 2, a back electrode 3, a thick-film electrode 4 (metallic element), and a resin element 5.

[0015] In semiconductor device 100, thick-film electrode 4 has the same size as backside electrode 3. In particular, thick-film electrode 4 has the same external shape as backside electrode 3. Semiconductor device 200 differs from semiconductor device 100 in the size of thick-film electrode 4. In semiconductor device 200, thick-film electrode 4 is smaller than backside electrode 3. In particular, thick-film electrode 4 is smaller in its external shape than backside electrode 3.

[0016] The semiconductor element 1 has the front electrode 2 on the front side and the back electrode 3 on the back side, opposite the front side. The thick-film electrode 4 is formed on the back side of the back electrode 3, that is, on the side surface (face) opposite the front side of the back electrode 3, which is connected to the back side of the semiconductor element 1. Thus, the front side of the thick-film electrode 4 faces and is in contact with the back side of the back electrode 3. The semiconductor element 1 is a power semiconductor element, such as an insulated-gate bipolar transistor (IGBT). The semiconductor element 1 has electrodes (front electrode 2, back electrode 3) on both sides (front and back) of the semiconductor element 1.

[0017] The front electrode 2 is in Fig. 1 is divided into four regions. However, the number of regions is not limited to four, but the front electrode 2 can be divided into any number of more than one. A part of the front side of the semiconductor element 1 is exposed without a front electrode 2. Although in the Fig. 2 and Fig. 3 is shown as a single piece, the back electrode 3 is not limited to a single piece, but can be divided into two or more pieces.

[0018] The front electrode 2 or the back electrode 3 can be made of aluminum or copper, for example. An electrode material and a material composition typically used for the manufacture of the semiconductor element 1 can be used to manufacture the front electrode 2 and back electrode 3.

[0019] The side surface of the back electrode 3 that connects to the front surface of the thick-film electrode 4 (i.e., the back surface of the back electrode 3) should be made of a material selected according to the joining material. For example, if solder is used as the joining material, the joining portion of the back surface of the back electrode 3 is preferably made of copper or nickel, for example. If the joining material is a low-temperature sintered material made of silver or copper nanoparticles, the joining portion of the back surface of the back electrode 3 is preferably made of silver, copper, or gold.

[0020] The connection area of ​​the back surface of the back electrode 3 can be formed by depositing a material by sputtering, vacuum evaporation, plating, or the like. For example, if the back electrode 3 is made of aluminum and is connected to the front surface of the thick-film electrode 4 using solder as the connecting material, the connection area of ​​the back surface of the back electrode 3 should be coated with, for example, nickel.

[0021] The thick-film electrode 4 can be formed by plating with copper, nickel, or the like. The thick-film electrode 4 can be formed by sintering copper or silver nanoparticles or the like. Furthermore, the thick-film electrode 4 can be formed with a foil or a thin plate, by direct bonding or soldering, by copper-tin liquid-phase diffusion bonding, or by bonding with a low-temperature sintered material made of silver or copper nanoparticles. The thick-film electrode 4 can be a thick metal plate (metal block) usable as the thick-film electrode 4. Furthermore, the corners of the thick-film electrode 4 can have a curvature (round shape) to prevent stress concentration.

[0022] The thick-film electrode 4 is preferably made of a material with high electrical conductivity and high thermal conductivity for cooling the power semiconductor element. For example, the thick-film electrode 4 can be made of copper, silver, or aluminum. The connection region of the front side of the thick-film electrode 4 is formed by depositing a material by sputtering, vacuum evaporation, plating, or the like, depending on the connection material for connecting to the back side of the backside electrode 3.

[0023] As in Fig. 2, the thick-film electrode 4 has a thickness equal to or greater than the thickness of the thin semiconductor element 1. "Thin semiconductor element 1" refers to the semiconductor element 1 whose thickness has been reduced by a thinning process. The thickness of the semiconductor element 1 can be selected according to the electrical characteristics. For example, the thickness of the semiconductor element 1 can be reduced to about 200 µm or less, and is preferably not less than 30 µm and not more than 150 µm. Regarding the thickness of the thick-film electrode 4 connected to the back surface of the back electrode 3, a lower bending rigidity of the thick-film electrode 4 than the semiconductor element 1 would not compensate much for the thinness of the semiconductor element 1 and thus would not be able to prevent chipping of the semiconductor element 1 very effectively.Accordingly, the thick-film electrode 4 requires a thickness such that the bending rigidity of the thick-film electrode 4 is equal to or greater than the bending rigidity of the semiconductor element 1 on which the thick-film electrode 4 is formed. Generally, the bending rigidity is calculated as (Young's modulus) × (second area moment) / (length). When a semiconductor element has a rectangular cross-section like the semiconductor element 1, the second area moment is proportional to the width of the semiconductor element and proportional to the cube of the thickness of the semiconductor element. For example, if the semiconductor element 1 is a Si element with a Young's modulus of 160 GPa and a thickness of 50 μm, and the thick-film electrode 4 is an aluminum electrode with a Young's modulus of 70 GPa, the thick-film electrode requires a thickness of 66 μm or more.If the semiconductor element 1 is a SiC element with a Young's modulus of 430 GPa and a thickness of 100 µm, and if the thick-film electrode 4 is a copper electrode with a Young's modulus of 110 GPa, the thick-film electrode requires a thickness of 158 µm or more. Therefore, if the thickness of the semiconductor element 1 is within the above-described range, the thickness of the thick-film electrode 4 should be no less than 30 µm and no more than 500 µm. The thickness of the thick-film electrode 4 can be arbitrarily selected according to the thickness of the semiconductor element 1.

[0024] As in Fig. 2, the thick-film electrode 4 has substantially the same size (area) as the backside electrode 3. The backside electrode 3 is smaller than the semiconductor element 1. However, the backside electrode 3 can be formed substantially on the entire backside of the semiconductor element 1. With the size of the thick-film electrode 4, as in the Fig. 3, the thick-film electrode 4 does not necessarily have to cover the entire back surface of the back surface electrode 3, but should only be larger in area than the heat generation portion of the semiconductor element 1. In this case, a part of the back surface of the back surface electrode 3 in which no thick-film electrode 4 is formed (ie, an exposed part) is covered with the resin member 5. However, it should be noted that the contact area between the thick-film electrode 4 and the back surface electrode 3 in the semiconductor device 100 in Fig. 2 is larger (larger area) than in the semiconductor device 200 in Fig. 3. Therefore, the semiconductor device 100 can better allow the heat generated in the semiconductor element 1 to flow through the thick film electrode 4 and thus reduce the thermal resistance more effectively than the semiconductor device 200. Regarding the shape of the thick film electrode 4, the corners of the thick film electrode 4 may have a curvature (round shape) to prevent stress concentration.

[0025] The resin member 5 is in contact with the lateral side surface of the thick film electrode 4 and encloses the periphery of the thick film electrode 4. As shown in Fig. 1, the resin element 5 encloses the entire circumference of the semiconductor element 1. As shown in Fig. 2, the resin member 5 is in contact with the side surfaces of the back electrode 3 and the semiconductor element 1, and surrounds the peripheries of the back electrode 3 and the semiconductor element 1. The resin member 5 is also formed on a region (outer peripheral region) of the back surface of the semiconductor element 1 where no back electrode 3 is formed. The resin member 5 is disposed so that the entire front surface of the front electrode 2 is exposed, opposite to the back surface of the front electrode 2, which is connected to the front surface of the semiconductor element 1; specifically, so that the entire back surface of the thick-film electrode 4 is exposed, opposite to the front surface of the thick-film electrode 4, which is connected to the back surface of the back electrode 3. That is, the resin member 5 has an exposure area to enable electrical connection of the front electrode 2 and the thick-film electrode 4.The front side of the semiconductor element 1 has an exposed area that is not covered with the resin element 5. The exposed area of ​​the front side of the semiconductor element 1 defines an area sealed with the resin element 5 and enables a reliable electrical connection of the front side of the front electrode 2.

[0026] In the semiconductor devices 100, 200 having the above-described configuration, the thick-film electrode 4 provided on the back side of the back electrode 3 compensates for the thinness of the semiconductor element 1 and can thus reduce the stress on the semiconductor element 1. In the semiconductor devices 100, 200, the resin member 5 covering the peripheries of the thick-film element 4 and the semiconductor element 1 can protect the outer peripheral region of the semiconductor element 1 and thus prevent chipping, cracking, and other damage to the semiconductor element 1 during transportation (handling) of the semiconductor element 1. Furthermore, unlike a conventional semiconductor element 1 with only a resin member 5, the semiconductor devices 100, 200 can prevent direct stress on the semiconductor element 1. Thus, the semiconductor devices 100, 200 can reduce the stress on the semiconductor element 1, for example, during transportation.

[0027] Next, a method for manufacturing a semiconductor device in Embodiment 1 will be described.

[0028] The Fig. 4 to 11 are schematic cross-sectional views showing manufacturing steps for a semiconductor device in Embodiment 1 of the present invention. Fig. 4 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 5 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 6 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention.

[0029] Fig. 7 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 8 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 9 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 10 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention. Fig. 11 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 1 of the present invention.

[0030] First, as in Fig. As shown in Fig. 4, on a predetermined region of a semiconductor wafer 10 on which a predetermined process has been performed (i.e., a region that will be converted into a semiconductor element 1), the front electrode 2 is formed on the front side and the back electrode 3 is formed on the back side (electrode formation step). A known method can be used to form the front electrode 2 and the back electrode 3. For example, a metallic material selected as the front electrode 2 and the back electrode 3 is deposited at a predetermined position on the semiconductor element 1 by vacuum evaporation, sputtering, or the like. Fig. Figure 5 is a schematic cross-section along the dotted line BB in Fig. 4. A thinning process may be performed on the semiconductor wafer 10 before forming the front electrode 2 and the back electrode 3. The thinning process may be performed on the back side of the semiconductor wafer 10 after forming the front electrode 2 and before forming the back electrode 3. A suitable thinning process of the semiconductor wafer 10 (semiconductor element 1) may be selected according to the manufacturing step.

[0031] Then, as in Fig. 6, the thick-film electrode 4 (metallic element) is formed on the back side of the back electrode 3 (metallic element formation step). As described above, the thick-film electrode 4 can be formed by bonding a metal plate (metal block) with a predetermined thickness via a bonding material or by deposition on the back electrode 3, such as sputtering or plating. A schematic cross-sectional structure diagram taken along the dot-dash line CC in Fig. 6 was recorded, is Fig. 7 (in Fig. 7, the front and back surfaces are inverted.) The previous manufacturing steps are performed on the semiconductor wafer 10, from which a plurality of semiconductor elements 1 can be formed simultaneously. Although the thick-film electrode 4 is formed on the back surface of the back surface electrode 3 in this step, a thick-film electrode can be formed on the front surface of the front surface electrode 2. This thick-film electrode can be formed in the same way as the thick-film electrode 4. Fig. 6 is a schematic plan view of the back side of the semiconductor wafer 10.

[0032] The wafer is then processed as shown in Fig. 8, after the formation of semiconductor elements 1, they are cut into individual semiconductor elements 1 with a predetermined size, e.g., according to the electric current density (semiconductor element cutting step). Dicing can be used for cutting into individual semiconductor elements 1. Each individual semiconductor element 1 has a cross-sectional shape as shown in Fig. 9 shown. Fig. 9 shows a case where the thick-film electrode 4 is formed on the back side of the backside electrode 3 before cutting into individual semiconductor elements 1. Alternatively, the thick-film electrode 4 may be formed on the back side of the backside electrode 3 after cutting into individual semiconductor elements 14.

[0033] The individual semiconductor element 1 is then coated with resin.

[0034] As in Fig. As shown in Figure 10, the single semiconductor element 1 is inserted into a housing 12 with the back of the thick-film electrode 4 facing downward. Subsequently, the resin element 5 is injected from a nozzle 11 into the housing 12 by molding such that the resin element 5 does not cover the front electrode 2. Thus, the periphery of the semiconductor element 1 is covered with the resin element 5 (resin element application step). Although Fig. 10 shows a single semiconductor element 1, a plurality of semiconductor elements 1 can be processed simultaneously in the housing 12.

[0035] Instead of the molding described above, a mold may also be used to cover the periphery of the semiconductor element 1 with the resin member 5. In a method using a mold, the semiconductor element 1 is placed in a mold, and the resin member 5 is injected under pressure. When such a mold is used, a portion of the semiconductor element 1 exposed by the resin member 5 after the resin member 5 is formed may be in such close contact with the inside of the mold that the resin member 5 is not applied to this portion. Alternatively, the resin member 5 may be formed by covering a portion of the thick-film electrode 4 that is exposed.

[0036] When encapsulation is performed with the resin element 5, the semiconductor element 1 can be processed in the encapsulated package. Any package (container) that allows processes with easy molding of the resin element 5 can be used. A package (container / container) can be selected accordingly depending on the resin element 5 used.

[0037] Through these steps, the periphery of the semiconductor element 1 with the electrodes formed thereon is covered (surrounded) with the resin member 5, so that the semiconductor device 100, as shown in Fig. 11 shown, can be formed.

[0038] As a further manufacturing method, the individual semiconductor element 1 may be placed on a protective layer such that the front side of the front electrode 2 is in contact with the protective layer (semiconductor element placement step).

[0039] Fig. 12 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention. In the drawing, a semiconductor device 300 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick-film electrode 4 (metallic element), and the resin element 5. The semiconductor device 300 differs from the semiconductor device 100 in its manufacturing method. In the manufacturing method of the semiconductor device 300, the method for forming the resin element 5 is different.

[0040] In the Fig. In the method for manufacturing the semiconductor device 300 shown in Figure 12, cutting into individual semiconductor elements 1 is performed, and the front side of the front electrode 2 of each semiconductor element 1 is placed on a protective layer, and then the periphery of the semiconductor element 1 is covered with the resin element 5, e.g., by the above-described potting (resin element application step). Through these steps, the semiconductor device 300 can be manufactured with a configuration as shown in Figure 12. Fig. 12. The details of a manufacturing process with a protective layer will be described later.

[0041] In Fig. 12, the resin member 5 covers the periphery of the thick-film electrode 4, with a part of the lateral surface of the back electrode 4 exposed. The resin member 5 of the semiconductor device 300 in Fig. 12 is from a different direction than in Fig. 2 and thus vertically inverted to the form in Fig. 2. This is due to the difference in the manner of forming the resin member 5, particularly the difference in the orientation of the front surface of the front electrode 2 (up or down) when the semiconductor element 1 is placed on a protective layer.

[0042] For example, the semiconductor device 300 can be formed by providing a groove in the package 12, inserting the front electrode 2 into the groove, and covering the periphery of the semiconductor element 1 with the resin member 5. Here, the resin member 5 is not formed on the lateral side surface of the front electrode 2, which is inserted into the groove in the package 12. Also, depending on the amount of supply of the resin member 5, a part of the side surface of the thick-film electrode 4 is exposed without the resin member 5 being present thereon because the back surface of the thick-film electrode 4 faces upward while the resin member 5 is applied. Alternatively, the resin member 5 may be formed in contact with the entire side surface of the thick-film electrode 4.

[0043] Fig. 13 is a schematic cross-sectional view of another semiconductor device in Embodiment 1 of the present invention. In the drawing, a semiconductor device 400 includes the semiconductor element 1, the front electrode 2, the back electrode 3, a thick-film electrode 8 (metallic member), and the resin member 5. In the semiconductor device 400, the thick-film electrode 8 is formed on the front surface of the front electrode 2 opposite to the back surface of the front electrode 2 on the front side of the semiconductor element 1. The semiconductor device 400 differs from the semiconductor device 100 in that the back surface of the thick-film electrode 8 is located on the front surface of the front electrode 2. The resin member 5 is formed in contact with the side surfaces of the front electrode 2 and the thick-film electrode 8 adjacent to the outer periphery of the semiconductor element 1, with the front surface of the thick-film electrode 8 exposed.Furthermore, the resin member 5 covers the outer peripheral region of the semiconductor element 1, which protrudes from the side surface of the back electrode 3 to the outer side surface. The resin member 5 is lower than the height of the front surface of the thick-film electrode 8, exposing a portion of the side surface of the thick-film electrode 8. By exposing a portion of the side surface of the thick-film electrode 8, the front surface of the thick-film electrode 8 can be effectively used as an electrode.

[0044] For example, when the semiconductor element 1 is an IGBT, the thick film electrode (front surface of the thick film electrode 8) may be formed only on a large one of the front electrodes 2 (e.g., an emitter electrode) where a large current flows, or may be formed on both front electrodes 2 including a base where no large current flows.

[0045] Fig. 14 is a schematic cross-sectional view of a semiconductor device in Embodiment 1 of the present invention. In the drawing, a semiconductor device 500 includes a semiconductor element 1, a front electrode 2, a back electrode 3, thick-film electrodes 4, 8 (metallic elements), and a resin element 5.

[0046] As in Fig. 14, the thick film electrode 8 may be formed on the front side of the front electrode 2, and the thick film electrode 4 may be formed on the back side of the back electrode 3. When a plurality of front electrodes 2 and back electrodes 3 are provided, the thick film electrode 8 is basically formed on each front electrode 2, and the thick film electrode 4 is basically formed on each back electrode 3. However, it goes without saying that some front electrodes 2 and back electrodes 3 may not have thick film electrodes 8, 4, and the resin member 5 is formed so that the front side of the thick film member 8 is exposed on the front side of the front electrode 2, and the back side of the thick film electrode 4 is exposed on the back side of the back electrode 3.The resin member 5 is in contact with the side walls of the front electrode 2 and the back electrode 3, which are adjacent to the outer periphery of the semiconductor element 1, and covers the outer peripheral region of the semiconductor element 1, which protrudes from the side surface of the back electrode 3 to the outside. Furthermore, the resin member 5 is lower than the height of the front surface of the thick-film electrode 8, exposing a portion of the side surface of the thick-film electrode 8.

[0047] The front side of the front electrode 2 on which the thick-film electrode 8 is formed can be configured and manufactured according to the bonding material for bonding the front electrode 2 and the thick-film electrode 8, like the above-described back side of the back electrode 3 on which the thick-film electrode 4 is formed. Therefore, the description will not be repeated.

[0048] The material and thickness of the thick-film electrode 8 are identical to those of the thick-film electrode 4 described above, so the description will not be repeated. The thick-film electrode 4 and the thick-film electrode 8 can be the same or different in material and thickness. The thick-film electrode 4 and the thick-film electrode 8 can be made of any material and can have any structure that can compensate for the thickness of the semiconductor element 1, establish electrical connection, and ensure high heat radiation performance.

[0049] To function as an electrode, the thick film electrode 8 is preferably approximately the same size as or smaller than the front electrode 2. With the thick film electrode 8 formed on the front surface of the front electrode 2, a part of the front surface of the semiconductor element 1 is exposed through the resin member 5 without a front electrode 2 being present thereon.

[0050] The lateral side surface of the thick film electrode 8 can be covered with the resin member 5 similarly to the thick film electrode 4 on the back side of the back side electrode 3, so that the description thereof will not be repeated.

[0051] For example, semiconductor device 300 has a thick-film electrode 4 on the back side of the back electrode 3; semiconductor device 400 has a thick-film electrode 8 on the front side of the front electrode 2; and semiconductor device 500 has a thick-film electrode 4 on the back side of the back electrode 3 and a thick-film electrode 8 on the front side of the front electrode 2. Accordingly, the thick-film electrode 4 or the thick-film electrode 8 compensates for the thinness of the semiconductor element 1, thus reducing the stress on the semiconductor element 1. In semiconductor devices 300, 400, and 500, the resin member 5 covering the periphery of the semiconductor element 1 can protect the outer peripheral region of the semiconductor element 1, thus preventing chipping, cracking, and other damage to the semiconductor element 1 during handling.Furthermore, unlike a conventional semiconductor element 1 with only one resin element 5, the semiconductor components 300, 400, 500 can prevent direct stress on the semiconductor element 1. Thus, the semiconductor components 300, 400, 500 can reduce the stress on the semiconductor element 1, for example, during handling.

[0052] Fig. 15 is a schematic cross-sectional view illustrating a semiconductor module in Embodiment 1 of the present invention. In the drawing, the semiconductor module 2000 includes the semiconductor device 100, an insulating circuit substrate 40, an electrode terminal 60, a molding resin 70 (sealing member), a bonding material 80, and a cooler 90. The top and bottom surfaces of the semiconductor module correspond to the front and back surfaces of the semiconductor device, respectively.

[0053] The insulating circuit substrate 40 includes a ceramic plate 41 (insulating substrate) and conductor layers 42, 43 formed on the top and bottom surfaces of the ceramic plate 41, respectively. The ceramic plate 41 can be made of silicon nitride (Si3N4), aluminum nitride (AlN), aluminum oxide, or Zr-containing aluminum oxide. In particular, AlN and Si3N4 are preferable in terms of thermal conductivity, and Si3N4 in terms of material strength.

[0054] The conductor layers 42, 43 formed on both sides (top and bottom) of the ceramic plate 41 are made of a metal with the same dimensions (size) and thickness. However, the conductor layers 42, 43, which have their respective circuits, may have different pattern shapes. The conductor layers 42, 43 are smaller than the ceramic plate 41. Because the conductor layers 42, 43 are smaller than the ceramic plate 41, the creepage distance between the conductor layers 42, 43 can be increased (maintained). Because the conductor layer 43 is smaller than the ceramic plate 41, the molding resin 70 can enter the space on the bottom of the ceramic plate 41. The conductor layers 42, 43 can be made of a metal with high electrical and thermal conductivities, such as aluminum, aluminum alloy, copper, or copper alloy. In particular, copper is preferable in terms of thermal and electrical conductivity.

[0055] The semiconductor component 100 is electrically connected to the conductor layer 42 on the top side of the ceramic plate 41 using solder (not shown), such as the connecting material 80. Silicon (Si) or silicon carbide (SiC), for example, can be used as the material for the semiconductor component 100. An Si semiconductor element or SiC semiconductor element with one of these materials as the substrate material can be used.

[0056] Solder is typically used as the bonding material 80 for connecting the semiconductor device 100 to the conductor layer 42 on the top surface of the insulating circuit substrate 40. Sintered silver or liquid-phase diffusion material can also be used as the bonding material 80 instead of solder. Sintered silver and liquid-phase diffusion materials, which have a higher melting temperature than solder, do not remelt when the cooler 90 is bonded to the conductor layer 43 on the bottom surface of the insulating circuit substrate 40. Therefore, sintered silver and liquid-phase diffusion materials increase the reliability of the bonding between the semiconductor device 100 and the insulating circuit substrate 40.

[0057] Furthermore, sintered silver and liquid-phase diffusion material, which have a higher melting temperature than solder, enable a higher operating temperature of the semiconductor module 2000. Sintered silver, which has higher thermal conductivity than solder, achieves higher heat dissipation performance of the semiconductor device 100, thus increasing reliability. Liquid-phase diffusion material, which can enable bonding with lower stress than sintered silver, achieves better processability and can prevent damage to the semiconductor device 100 due to the bonding force.

[0058] The electrode terminal 60 is connected to the semiconductor device 100 in a predetermined electrode terminal connection position. The electrode terminal 60 is also mounted in a predetermined electrode terminal connection position on the conductor layer 42 on the upper surface of the insulating circuit substrate 40. The electrode terminal 60 protrudes from the side surface of the molding resin 70 to the outside. The electrode terminal 60 can be manufactured, for example, by forming a 0.5 mm thick copper plate into a predetermined shape by etching, punching, or the like.

[0059] The mold resin 70 seals the above-described ceramic plate 41, the conductor layer 42, and the conductor layer 43. The mold resin 70 also seals the semiconductor device 100 disposed on the conductor layer 42. At this time, the mold resin 70 is located on an exposed portion of the front surface of the semiconductor element 1 of the semiconductor device 100. Furthermore, the mold resin 70 seals a connection area between the electrode terminal 60 and the conductor layer 42 and between the electrode terminal 60 and the semiconductor device 100, with one end of the electrode terminal 60 protruding outward from the mold resin 70. The mold resin 70 can be, for example, a curable epoxy resin or phenolic resin with the addition of silica particles.

[0060] Solder can be used as the bonding material 80 for connecting the cooler 90 to the conductor layer 43 on the underside, for example, in the insulating circuit substrate 40. Like solder, a Sn-Sb solder material is preferable in terms of connection reliability. Sintered silver or liquid phase diffusion material can also be used instead of solder to connect the cooler 90 to the conductor layer 43 on the underside in the insulating circuit substrate 40, as in the connection between the semiconductor device 100 and the insulating circuit substrate 40.

[0061] As liquid-phase diffusion materials, Cu-Sn and Cu-Ag are preferable in terms of connection reliability. Sintered silver, which has higher thermal conductivity than solder, achieves higher heat radiation performance of the semiconductor module 2000, thus increasing reliability. Liquid-phase diffusion materials, which can enable bonding with lower stress than sintered silver, achieve better processability and can prevent the semiconductor module 2000 from being damaged by the bonding force.

[0062] The cooler 90 can be made of, for example, aluminum, aluminum alloy, copper, copper alloy, or a composite material made of aluminum and ceramic (e.g., AlSiC). Aluminum or an aluminum alloy is particularly preferable due to its good thermal conductivity, processability, and low weight. The cooler 90 has a flow path for a coolant to flow. Fig. 15, a plurality of cooling pins 91 are provided, enabling efficient cooling. The cooler 90 is not limited to this structure, but may have any structure capable of achieving cooling. Instead of the semiconductor device 100, any of the semiconductor devices 200, 300, 400, 500, and the semiconductor devices in the embodiments described below may be applied to the semiconductor module 2000 described above.

[0063] In a semiconductor device having the above-described configuration, the thick-film electrode 4 is formed on the back surface of the back surface electrode 3 of the semiconductor element 1, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0064] Furthermore, the thick-film electrode 8 is formed on the front side of the front electrode 2 of the semiconductor element 1, and the periphery of the thick-film electrode 8 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0065] Since the thick-film electrode 4 and the thick-film electrode 8 are formed on the backside electrode 3 and the front side electrode 2 of the semiconductor element 1, respectively, the thickness of the electrodes on the semiconductor element 1 is increased. Accordingly, the thermal radiation of the semiconductor element 1 is promoted, and the short-circuit resistance of the semiconductor device is improved.

[0066] Furthermore, the thick-film electrodes 4, 8 are made of a sintered material composed of copper or silver nanoparticles and therefore exhibit a porosity typical of sintered material. Accordingly, the thick-film electrodes 4, 8, although thick, can relieve the generated thermal stress through a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1. Embodiment 2

[0067] Embodiment 2 differs from Embodiment 1 in the placement of the resin member 5. Specifically, in Embodiment 2, the resin member 5 protrudes downward from the back surface of the thick-film electrode 4. The resin member 5 protruding downward from the back surface of the thick-film electrode 4 eliminates the need for an additional member for height adjustment when soldering the back surface of the thick-film electrode 4 to another member. The solder height can be adjusted according to the protrusion of the resin member 5 from the back surface of the thick-film electrode 4. Otherwise, Embodiment 2 is the same as Embodiment 1, so the detailed description will not be repeated.

[0068] In this configuration, the thick-film electrode 4 is provided on the back side of the backside electrode 3 of the semiconductor element 1, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This reduces the stress on the semiconductor element 1 during handling, enabling easy transportation of the thin semiconductor element 1.

[0069] Fig. 16 is a schematic plan view of a semiconductor device in Embodiment 2 of the present invention. Fig. 17 is a schematic cross-sectional view of a semiconductor device in Embodiment 2 of the present invention. Fig. 17 is a schematic cross-section along the dot-dash line DD in Fig. 16. In the drawings, a semiconductor device 600 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick film electrode 4 (metallic element), and the resin element 5. Fig. 18 is a schematic cross-sectional view of another semiconductor device in Embodiment 2 of the present invention. In the drawing, a semiconductor device 700 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick-film electrode 4 (metallic element), and the resin element 5.

[0070] In Fig. 16, the resin member 5 is disposed on the front side of the semiconductor element 1, from the lateral side surface of the front electrode 2 to the outer peripheral region of the semiconductor element 1. The resin member 5 is not disposed on a region of the front side of the semiconductor element 1 between the facing sides of the front electrodes 2. That is, the front side of the semiconductor element 1 is exposed in this region.

[0071] In the Fig. 17 and Fig. 18, semiconductor devices 600 and 700 differ in the size (area) of the thick-film electrode 4 in the cross-sectional direction. Furthermore, semiconductor devices 600 and 700 differ in the amount of resin element 5 that enters the space on the back side of semiconductor device 1. Resin element 5 is also provided on the outer peripheral portion of the back side of thick-film electrode 4, on the inside relative to the side surface of thick-film electrode 4. As shown in Fig. 17, Fig. As shown in Figure 18, the backside electrode 3 in both semiconductor devices 600, 700 is smaller than the semiconductor element 1. However, the backside electrode 3 can be formed on substantially the entire backside of the semiconductor element 1. If the backside electrode 3 is formed on substantially the entire semiconductor element 1, the heat generated in the heat generation region of the semiconductor element 1 can completely flow through the thick-film electrode 4. This can effectively reduce the thermal resistance.

[0072] In the case of Fig. 17, the thick-film electrode 4 is larger than the backside electrode 3, and the outer peripheral portion (lateral side surface) of the thick-film electrode 4 protrudes to the outside relative to the outer peripheral portion of the backside electrode 3. Alternatively, the thick-film electrode 4 may be smaller than the backside electrode 3 and only needs to be positioned so that the thick-film electrode 4 can efficiently dissipate the heat from the heat generation region of the semiconductor element 1. Accordingly, as shown in Fig. 18, the thick-film electrode 4 may be smaller than the backside electrode 3 and larger than the heat generation portion of the semiconductor element 1. In this case, a part of the backside of the backside electrode 3, in which no thick-film electrode 4 is formed, is covered with the resin member 5. However, it should be noted that the contact area between the thick-film electrode 4 and the backside electrode 3 in the semiconductor device 600 in Fig. 17 is larger (larger area) than in the semiconductor device 700 in Fig. 18. Therefore, the semiconductor device 600 can better conduct the heat generated in the semiconductor device 1 through the thick-film electrode 4 and thus reduce the thermal resistance more effectively than the semiconductor device 700.

[0073] In Fig. 17, the sealing member 5 covers the outer peripheral region of the semiconductor element 1, from the front side to the back side of the semiconductor element 1. The sealing member 5 is in contact with the side walls of the front electrode 2 and the back electrode 3. The resin member 5 covers the outer peripheral region of the thick-film electrode 4, which protrudes from the lateral side surface of the back electrode 3, from the front side to the back side of the thick-film electrode 4. The front side of the resin member 5 is flush with the front side of the front electrode 2. Fig. 18 differs from Fig. 17 by the configuration of the back electrode. The thick-film electrode 4 is smaller in its outer shape than the back electrode 3, and the resin member 5 is in contact with a part of the back surface of the back electrode 3 where no thick-film electrode 4 is formed. The resin member 5 is also formed on the outer peripheral region of the back surface of the thick-film electrode 4.

[0074] As in Embodiment 1, in the semiconductor devices 600, 700 having the above-described configuration, the thick-film electrode 4 provided on the back side of the back electrode 3 compensates for the thinness of the semiconductor element 1 and can thus reduce the stress on the semiconductor element 1. In the semiconductor devices 600, 700, the resin member 5 covering the peripheries of the thick-film element 4 and the semiconductor element 1 can protect the outer peripheral region of the semiconductor element 1 and thus prevent chipping, cracking, and other damage to the semiconductor element 1 during transportation of the semiconductor element 1. Furthermore, unlike a conventional semiconductor element 1 having only the resin member 5, the semiconductor devices 600, 700 can prevent direct stress on the semiconductor element 1. Thus, the semiconductor devices 600, 700 can reduce the stress on the semiconductor element 1, for example, during transportation.

[0075] Next, a method for manufacturing a semiconductor device according to Embodiment 2 will be described.

[0076] In principle, the manufacturing steps in Embodiment 1 can be used for the manufacturing in Embodiment 2. However, Embodiment 2 differs from Embodiment 1 in the method for forming the resin member 5 on the periphery of the thick-film electrode 4. Fig. 19 is a schematic plan view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. Fig. 20 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. Fig. 21 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. Fig. 22 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. Fig. 23 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. Fig. 24 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 2 of the present invention. The steps illustrated in Embodiment 1 up to the semiconductor element cutting step can also be used.

[0077] Examples of methods for covering (surrounding) the periphery of the thick film electrode 4 with the resin member 5 are injecting the resin member 5 by potting with a protective layer 6 and injecting the resin member 5 under pressure by compression molding.

[0078] A manufacturing method by encapsulating the protective layer 6 will be described below. Regarding a method for manufacturing the semiconductor element 1, the same method as in Embodiment 1 can be used.

[0079] After cutting into individual semiconductor elements 1, as in Fig. 19, each semiconductor element 1 is placed on the protective layer 6 so that the front side of the front electrode 2 is located on the front side of the protective layer 6 (semiconductor element placement step). Fig. Figure 19 shows the semiconductor elements 1 in a 3×3 array. However, the number of semiconductor elements 1 is not limited to this, but can be one or more than 3×3. Fig. 20 is a schematic cross-section along the dotted line EE in Fig. 19.

[0080] Then, as in Fig. 21, the resin member 5 is applied by molding so that the resin member 5 covers the thick-film electrode 4 of the semiconductor element 1. At this time, the resin member 5 can be formed while the protective layer 6 with the semiconductor element 1 thereon is placed in a package as used in Embodiment 1.

[0081] Then, as in Fig. 22, Fig. 23, unnecessary parts of the resin member 5 are removed with a die. An upper mold 71 and a lower mold 72 with the protective layer 6 held therebetween are pressed together, thereby molding the resin member 5 into the shape corresponding to the die (resin member molding step). However, the resin member 5 does not need to be completely removed by the die alone. In order to completely expose the front surface of the thick film electrode 4, the resin member 5 remaining on the front surface of the thick film electrode 4 is removed by, for example, laser, or the resin member 5 is removed by grinding or abrasion until the front surface of the thick film electrode 4 is exposed (metallic member exposing step). The arrows in the drawing indicate the moving direction of the upper mold 71 and the lower mold 72.

[0082] Subsequently, the resin element 5 is cut according to the predetermined shape (resin element cutting step), and the semiconductor element 1 is separated from the protective layer 6 (semiconductor element cutting step). In this way, the semiconductor device 600 with a structure as shown in Fig. 24. Since the resin member 5 covers the periphery of the thick-film electrode 4, the difficult-to-handle thin semiconductor element 1 can be treated without contact.

[0083] In a semiconductor device having the above-described configuration, the thick-film electrode 4 is formed on the backside electrode 3 of the semiconductor element 1, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0084] Furthermore, the thick-film electrode 8 is formed on the front side of the front electrode 2 on the front side of the semiconductor element 1, and the periphery of the thick-film electrode 8 is covered with the resin member 5. This reduces the stress on the semiconductor element 1 during handling, enabling easy transportation of the thin semiconductor element 1.

[0085] Since the thick-film electrode 4 and the thick-film electrode 8 are formed on the backside electrode 3 and the frontside electrode 2 of the semiconductor element 1, respectively, the thickness of the electrodes on the semiconductor element 1 is increased. Accordingly, the heat radiation of the semiconductor element 1 is promoted and the short-circuit resistance of the semiconductor device is improved.

[0086] Furthermore, the thick-film electrodes 4, 8 are made of a sintered material composed of copper or silver nanoparticles and therefore exhibit a porosity typical of the sintered material. Accordingly, the thick-film electrodes 4, 8, although thick, can relieve the generated thermal stress through a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1.

[0087] Furthermore, when the semiconductor devices 600, 700 need to be connected to a cooler for cooling the semiconductor element 1, the height of the connecting material can be adjusted by adjusting the protrusion amount of the resin member 5. Embodiment 3

[0088] Embodiment 3 differs from Embodiment 1 in the placement of the thick-film electrode 4 and the resin member 5. Specifically, in Embodiment 3, the thick-film electrode 4 is larger than the semiconductor element 1, and the resin member 5 is in contact only with the thick-film electrode 4. Otherwise, Embodiment 3 is identical to Embodiment 1, so the detailed description will not be repeated.

[0089] With this configuration, the thick-film electrode 4 is formed on the back side of the backside electrode 3, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This reduces the stress on the semiconductor element 1 during handling, enabling easy transportation of the thin semiconductor element 1.

[0090] Fig. 25 is a schematic plan view of a semiconductor device in Embodiment 3 of the present invention. Fig. 26 is a schematic cross-sectional view of a semiconductor device in Embodiment 3 of the present invention. A schematic cross-sectional view taken along the dot-dash line FF in Fig. 25 was recorded, is Fig. 26. In the drawings, a semiconductor device 800 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick film electrode 4 (metallic element), and the resin element 5.

[0091] The thick-film electrode 4 is formed on the back side of the backside electrode 3. The thick-film electrode 4 is larger in its external shape than the semiconductor element 1, and the outer peripheral portion of the thick-film electrode 4 protrudes outward relative to the outer peripheral portion of the semiconductor element 1. That is, the thick-film electrode 4 is larger than the semiconductor element 1.

[0092] The resin member 5 is in contact with the lateral side surface of the thick-film electrode 4 and surrounds the periphery of the thick-film electrode 4. The resin member 5 is formed on the outer peripheral region of the back surface of the thick-film electrode 4, exposing a portion of the back surface of the thick-film electrode 4. The front surface of the front electrode 2 and the back surface of the thick-film electrode 4 are exposed by the resin member 5 for electrical connection.

[0093] Next, a method for manufacturing a semiconductor device in Embodiment 3 will be described.

[0094] In Embodiment 3, the steps up to the semiconductor element cutting step shown in Embodiment 1 can also be used.

[0095] Fig. 27 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention. Fig. 28 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention. Fig. 29 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention. Fig. 30 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 3 of the present invention.

[0096] A manufacturing method by molding the protective layer 6 will be described below. Regarding a method for manufacturing the semiconductor element 1, the same method as in Embodiment 1 can be used.

[0097] After cutting into individual semiconductor elements 1, as in Fig. 27, each semiconductor element 1 is placed on the protective layer 6 so that the front side of the front electrode 2 is located on the front side of the protective layer 6 (semiconductor element placement step). Fig. Figure 27 shows semiconductor elements 1 in a 3×3 arrangement in cross section. However, the number of semiconductor elements 1 is not limited to this, but may be one or more than 3×3.

[0098] After the front side of the front electrode 2 of the semiconductor element 1 is placed on the protective layer 6, the resin element 5 is applied by molding so that the resin element 5 reaches the lateral side surface of the thick-film electrode 4 of the semiconductor element 1 (resin application step). At this time, the resin element 5 can be formed while the protective layer 6, with the semiconductor element 1 thereon, is placed in a package as used in Embodiment 1. In order to mold the resin element 5 in the manner shown in Fig. To provide the shape shown in Figure 27, the viscosity, filler amount, and linear expansion coefficient of the resin member 5, as well as the placement of the semiconductor element 1 with the thick-film electrode 4, can be adjusted. Thus, the resin member 5 can cover the periphery of the thick-film electrode 4 without reaching the periphery of the semiconductor element 1.

[0099] Thereafter, from the state where the thick-film electrode 4 is covered with the resin member 5, the resin member 5 on the back of the thick-film electrode 4 must be removed to a certain extent to expose the electrode surface (back) of the thick-film electrode 4. The resin member 5 can be removed to a predetermined thickness, for example, by laser, or the resin member 5 can be removed by grinding or abrasion until the back of the thick-film electrode 4 is exposed.

[0100] A state after the resin member 5 has been removed by grinding or abrasion is shown, for example, in Fig. 28. In this state, the product can be transported. Furthermore, the resin element 5 can be cut, for example, by dicing, and the semiconductor components 800 can be removed individually from the protective layer 6. At the time of handling the fragile semiconductor element 1 (including the time of removal), the semiconductor element 1 can be handled via the resin element 5 and without direct contact.

[0101] Then, as in Fig. 28, unnecessary parts of the resin element 5 on the back of the thick film electrode 4 are removed with an upper mold 73.

[0102] In the upper mold 73, pressure is applied to the semiconductor element 1 placed on the protective layer 6 so that the resin element 5 is molded according to the shape of the upper mold 73 (resin element molding step). This removes almost all of the resin element 5 from the back surface of the thick-film electrode 4. Furthermore, the resin element 5 remaining slightly on the back surface of the thick-film electrode 4 is removed, for example, by a laser. This allows the electrode surface of the thick-film electrode 4 to be exposed. Alternatively, the resin element 5 can be directly molded into such a shape by compression molding, in which the resin element 5 is injected into a die under pressure.

[0103] Subsequently, the resin element 5 is cut according to the predetermined shape (resin element cutting step) and the semiconductor element 1 is separated from the protective layer 6 (semiconductor element cutting step). In this way, the semiconductor device 800 with a structure as shown in Fig. 30. Therefore, since the thick-film electrode 4 is arranged on the back side of the backside electrode 3 of the semiconductor element 1 and the resin member 5 covers the periphery of the thick-film electrode 4, the thin semiconductor element 1, which is difficult to handle, can be handled without contact.

[0104] Embodiment 3 shows a technique in which the protective layer 6 is used for semiconductor elements 1 to be arranged thereon, for example. However, it goes without saying that, in a molding process, the resin element 5 may be directly molded into a package containing the semiconductor elements 1 without using the protective layer 6.

[0105] In a semiconductor device having the above-described configuration, the thick-film electrode 4 is formed on the back surface of the back surface electrode 3 of the semiconductor element 1, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0106] Furthermore, the thick-film electrode 4 is made of a sintered material composed of copper or silver nanoparticles and thus exhibits a porosity inherent in the sintered material. Accordingly, the thick-film electrode 4, despite its thickness, can relieve the thermal stress generated by a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1. Embodiment 4

[0107] Embodiment 4 differs from Embodiment 3 in the placement of the resin member 5. Specifically, in Embodiment 4, the resin member 5 has a height such that the resin member 5 is flush with the front surface of the front electrode 2. Otherwise, Embodiment 4 is identical to Embodiment 3, including the advantageous effects, so the detailed description will not be repeated.

[0108] In this configuration, the thick-film electrode 4 is formed on the back surface of the backside electrode 3, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This reduces the stress on the semiconductor element 1 during handling, enabling easy transportation of the thin semiconductor element 1. Furthermore, the resin member 5 surrounding the side surface of the semiconductor element 1 prevents the semiconductor element 1 from being touched by the side surface of the semiconductor element 1. This prevents chipping and other damage to the semiconductor element 1.

[0109] Fig. 31 is a schematic plan view of a semiconductor device in Embodiment 4 of the present invention. Fig. 32 is a schematic cross-sectional view of a semiconductor device in Embodiment 4 of the present invention. A schematic cross-sectional view taken along the dot-dash line GG in Fig. 31 is Fig. 32. In the drawings, a semiconductor device 900 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick film electrode 4 (metallic element), and the resin element 5.

[0110] The thick film electrode 4 is larger in its outer shape than the semiconductor element 1, and the outer peripheral portion of the thick film electrode 4 protrudes to the outside with respect to the outer peripheral portion of the semiconductor element 1.

[0111] In Fig. 32, the resin member 5 is in contact with the lateral side surface of the thick film electrode 4 and encloses the periphery of the thick film electrode 4. The resin member 5 protrudes toward the front side of the semiconductor element 1 and encloses the periphery of the semiconductor element 1. Furthermore, the resin member 5 protruding toward the front side of the semiconductor element 1 has a height such that the resin member 5 is flush with the front side of the front electrode 2. The resin member 5 is also formed on the back side of the thick film electrode 4. Here, the resin member 5 is formed on the outer peripheral region of the back side of the thick film electrode 4, exposing a part of the back side of the thick film electrode 4. The front side of the front electrode 2 and the back side of the thick film electrode 4 are exposed by the resin member 5 for electrical connection.

[0112] Next, a method for manufacturing a semiconductor device in Embodiment 4 will be described.

[0113] The stages up to the semiconductor element cutting step shown in Embodiment 1 can also be used.

[0114] Fig. 33 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention. Fig. 34 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention. Fig. 35 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention. Fig. 36 is a schematic cross-sectional view illustrating a manufacturing step for a semiconductor device in Embodiment 4 of the present invention.

[0115] As for the method for manufacturing the semiconductor element 1, the same manner as in Embodiment 1 can be used.

[0116] After cutting into individual semiconductor elements 1, as in Fig. 33, each semiconductor element 1 is placed in a sub-mold 74 such that the front side of the front electrode 2 is in contact with the underside of the sub-mold 74 (semiconductor element placement step). Fig. Figure 33 shows a cross-sectional view of a semiconductor element 1. However, the number of semiconductor elements 1 is not limited to this, but may be 3×3 or more.

[0117] Then, as in Fig. 34, after placing the semiconductor element 1 in the sub-mold 74, the resin member 5 is applied by molding so that the resin member 5 covers the thick-film electrode 4 of the semiconductor element 1 (resin application step). Here, the viscosity, filler amount, and linear expansion coefficient of the resin member 5 to be molded into the sub-mold 74 and the placement of the semiconductor element 1 with the thick-film electrode 4 can be adjusted so that the resin member 5 can surround the periphery of the semiconductor element 1 on which the thick-film electrode 4 is formed without reaching the periphery of the semiconductor element 1.

[0118] Then, as in Fig. 35, unnecessary parts of the resin element 5 on the back of the thick film electrode 4 are removed with an upper mold 75.

[0119] The upper mold 75 applies pressure to the semiconductor element 1 placed in the lower mold 74, so that the resin element 5 is formed according to the shape of the lower mold 74 (resin element forming step). As a result, almost all of the resin element 5 is removed from the back surface of the thick film electrode 4. Furthermore, the resin element 5 remaining slightly on the back surface of the thick film electrode 4 is removed, for example, by a laser. This allows the back surface of the thick film electrode 4 to be exposed. If residual resin element 5 still adheres to the front electrode 2 after the semiconductor element 1 is removed from the lower mold 74 after unnecessary parts of the resin element 5 are removed from the back surface of the thick film electrode 4 by the upper mold 75, the residue can be removed, for example, by a laser, so that the front surface of the front electrode 2 and the back surface of the thick film electrode 4 can be exposed.

[0120] Through these steps, the semiconductor device 900 having a structure as shown in Fig. 36 (semiconductor element removal step). Since the resin member 5 covers the periphery of the thick-film electrode 4, the difficult-to-handle thin semiconductor element 1 can be handled without contact.

[0121] Fig. 37 is a schematic cross-sectional view illustrating another semiconductor device in Embodiment 4 of the present invention. In the drawing, a semiconductor device 1000 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick film electrode 4 (metallic element), and the resin element 5.

[0122] The thick-film electrode 4 is larger in its outer shape than the semiconductor element 1 and protrudes to the outside with respect to the outer peripheral region of the semiconductor element 1.

[0123] The resin member 5 is in contact with the lateral side surface of the thick-film electrode 4 and surrounds the periphery of the thick-film electrode 4. The resin member 5 protrudes toward the front surface of the semiconductor device 1, exposing the entire back surface of the thick-film electrode 4. Furthermore, the resin member 5 has a height such that the resin member 5 is flush with the front surface of the front electrode 2. The resin member 5 is not formed on the back surface of the thick-film electrode 4, thus distinguishing the semiconductor device 1000 from the semiconductor device 900.

[0124] In the semiconductor devices having the configurations described above, the thick-film electrode 4 is formed on the back surface of the back surface electrode 3 of the semiconductor element 1, and the peripheries of the semiconductor element 1 and the thick-film electrode 4 are covered with the resin member 5. Accordingly, the stress on the semiconductor element 1 during handling of the semiconductor element 1 can be reduced. This prevents chipping of the semiconductor element 1 and allows for easy transportation of a thin semiconductor element 1.

[0125] Since the thick-film electrode 4 is formed on the backside electrode 3 of the semiconductor element 1, the thickness of the electrode on the semiconductor element 1 is increased. Accordingly, the heat radiation of the semiconductor element 1 is promoted and the short-circuit resistance of the semiconductor device is improved.

[0126] Furthermore, the thick-film electrode 4 is made of a sintered material composed of copper or silver nanoparticles and thus exhibits a porosity inherent in the sintered material. Accordingly, the thick-film electrode 4, despite its thickness, can relieve the thermal stress generated by a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1. Embodiment 5

[0127] Embodiment 5 differs from Embodiment 1 in the placement of the resin member 5. Specifically, in Embodiment 5, the resin member 5 has a height such that the resin member 5 is flush with the front surface of the thick-film electrode 8 on the front surface of the front electrode 2. Furthermore, Embodiment 5 differs from Embodiment 1 in the size of the thick-film electrode 4 formed on the back surface of the back electrode 3. Otherwise, Embodiment 5 is identical to Embodiment 1, including the advantageous effects, so the detailed description will not be repeated.

[0128] In this configuration, the thick-film electrode 4 is formed on the back side of the backside electrode 3, and the periphery of the thick-film electrode 4 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0129] Fig. 38 is a schematic cross-sectional view of a semiconductor device in Embodiment 5 of the present invention. In the drawing, a semiconductor device 1100 includes the semiconductor element 1, the front electrode 2, the back electrode 3, thick-film electrodes 4, 8 (metallic elements), and the resin element 5.

[0130] The thick-film electrode 4 is formed on the back side of the backside electrode 3. The thick-film electrode 4 is larger in its external shape than the semiconductor element 1 and protrudes outwardly with respect to the outer peripheral region (side surface) of the semiconductor element 1.

[0131] The thick-film electrode 8 is formed on the front side of the front electrode 2. The thick-film electrode 8 has the same size as the front electrode 2. The thick-film electrode 8 can be made of a sintered material, e.g., copper or silver nanoparticles. The thick-film electrode 4 can be made of the same material as the thick-film electrode 8.

[0132] The resin member 5 is in contact with the side walls of the thick-film electrodes 4 and 8 and encloses the periphery of the thick-film electrodes 4 and 8. The resin member 5 has a height such that the resin member 5 is flush with the front surface of the thick-film electrode 8. The resin member 5 is not formed on the back surface of the thick-film electrode 4. Furthermore, the front surface of the thick-film electrode 8 formed on the front surface of the front electrode 2 is exposed by the resin member 5. The back surface of the thick-film electrode 4 formed on the back surface of the back electrode 3 is also exposed by the resin member 5. The resin member 5 is in contact with: the lateral side surface of the front electrode 2, the lateral side surface of the thick-film electrode 8 formed on the front surface of the front electrode 2, and the lateral side surface of the back electrode 3 adjacent to the outer periphery of the semiconductor element 1.The resin member 5 protrudes outward from the lateral side surface of the backside electrode 3. The resin member 5 covers the front surface of the thick-film electrode 4 formed on the backside of the backside electrode 3 and also covers the outer peripheral region of the semiconductor element 1.

[0133] This semiconductor device 1100 can be manufactured by combining the manufacturing steps in Embodiments 1 to 4 described above.

[0134] For example, front electrode 2 and back electrode 3 are formed on a semiconductor wafer. Then, thick-film electrode 8 is bonded to the front surface of front electrode 2. The semiconductor wafer is sliced ​​into individual semiconductor elements 1, and then thick-film electrode 4 is bonded to the back surface of back electrode 3. Then, the front surface of front electrode 2 is protected with protective layer 6, and resin element 5 is molded in a die by encapsulation or compression molding. Then, resin element 5 on the front surface of thick-film electrode 8 is removed by grinding or abrasion. It is then divided into individual semiconductor devices 1100, and the protective layer is peeled off the front surface of front electrode 2. This forms semiconductor device 1100.

[0135] In a semiconductor device having the above-described configuration, the thick-film electrode 8 is formed on the front side of the front electrode 2 of the semiconductor element 1, and the thick-film electrode 4 is formed on the back side of the back electrode 3 of the semiconductor element 1. The peripheries of the thick-film electrodes 4 and 8 are also covered with the resin member 5. This reduces the stress on the semiconductor element 1 during handling, enabling easy transportation of the thin semiconductor element 1.

[0136] Since the thick-film electrode 4 and the thick-film electrode 8 are formed on the backside electrode 3 and the frontside electrode 2 of the semiconductor element 1, respectively, the thickness of the electrodes on the semiconductor element 1 is increased. Accordingly, the heat radiation of the semiconductor element 1 is promoted and the short-circuit resistance of the semiconductor device is improved.

[0137] Furthermore, the thick-film electrode 8 is made of a sintered material composed of copper or silver nanoparticles and thus exhibits porosity inherent in the sintered material. Accordingly, the thick-film electrode 8, despite its thickness, can reduce the thermal stress generated by a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1. Embodiment 6

[0138] Embodiment 6 differs from Embodiment 1 in that only the thick film electrode 8 is formed on the front surface of the front electrode 2 and that the resin member 5 is higher than the height of the front surface of the thick film electrode 8. Otherwise, Embodiment 6 is identical to Embodiment 1 including the advantageous effects, so the detailed description will not be repeated.

[0139] With this configuration, the stress on the semiconductor element 1 during handling of the semiconductor element 1 can be reduced, enabling easy transportation of the thin semiconductor element 1 since the periphery of the thick film electrode 8 is covered with the resin member 5.

[0140] Fig. 39 is a schematic cross-sectional view of a semiconductor device in Embodiment 6 of the present invention. In the drawing, a semiconductor device 1200 includes the semiconductor element 1, the front electrode 2, the back electrode 3, the thick film electrode 8 (metallic element), and the resin element 5.

[0141] The thick-film electrode 8 is formed on the front side of the front electrode 2. The thick-film electrode 8 has the same size as the front electrode 2. The thick-film electrode 8 can be made of a sintered material, e.g., copper or silver nanoparticles.

[0142] The resin member 5 is in contact with the lateral side surface of the thick film electrode 8 and encloses the periphery of the thick film electrode 8. The resin member 5 is in contact with the side surfaces of the front electrode 2 and the back electrode 3 adjacent to the outer periphery of the semiconductor element 1, with the front surface of the thick film electrode 8 being exposed. Furthermore, the resin member 5 covers the outer peripheral region of the semiconductor element 1, which protrudes from the lateral side surface of the back electrode 3 to the outer side surface. The resin member 5 is higher than the height of the front surface of the thick film electrode 8. The resin member 5, higher than the height of the front surface of the thick film electrode 8, can protect the front surface of the thick film electrode 8 from damage, for example, during transportation of the semiconductor element 1.

[0143] This semiconductor device 1200 can be manufactured by combining the manufacturing steps in Embodiments 1 to 4 described above.

[0144] For example, the front electrode 2 and the back electrode 3 are formed on a predetermined area of ​​the semiconductor wafer 10. The semiconductor wafer 10 is then cut into individual semiconductor elements 1. After cutting into individual semiconductor elements 1, the resin element 5 is applied by molding, and the resin element 5 on the front surface of the front electrode 2 is thinned using a die. Furthermore, the semiconductor element 1 is sealed with resin, e.g., by compression molding. After that, the resin element 5 on the front surface of the front electrode 2 is removed, e.g., with a laser. Subsequently, paste or ink containing copper or silver nanoparticles is applied to the front surface of the front electrode 2 in a space surrounding the resin elements 5. The applied paste or ink is then sintered into the thick-film electrode 8. Through these steps, the semiconductor device 1200 is formed.

[0145] In a semiconductor device having the above-described configuration, the thick-film electrode 8 is formed on the front side of the front electrode 2 of the semiconductor element 1, and the periphery of the thick-film electrode 8 is covered with the resin member 5. This can reduce the stress on the semiconductor element 1 during handling of the semiconductor element 1, enabling easy transportation of the thin semiconductor element 1.

[0146] Furthermore, the thick-film electrode 8 is made of a sintered material composed of copper or silver nanoparticles and thus exhibits a porosity inherent in the sintered material. Accordingly, the thick-film electrode 8, despite its thickness, can relieve the thermal stress generated by a difference in the linear expansion coefficient. This can reduce the stress on the semiconductor element 1.

[0147] Since the thick-film electrode 8 is formed on the front electrode 2 of the semiconductor element 1, the thickness of the electrode on the semiconductor element 1 is increased. Accordingly, the thermal radiation of the semiconductor element 1 is promoted, and the short-circuit resistance of the semiconductor device is improved.

[0148] The present invention can be formed by combining a plurality of components disclosed in the above-mentioned embodiments. List of reference symbols 1 semiconductor element 2 front electrode 3 back electrode 4, 8 Thick-film electrode 5 resin element 6 protective layer 10 semiconductor wafers 11 Nozzle 12 housings 40 Insulating circuit substrate 41 Insulating substrate 42, 43 Conductor layer 60 Electrode connection 70 Sealing element 71, 73, 75 upper form 72, 74 subform 80 connecting material 90 coolers 91 Cooling pin 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200 semiconductor device 2000 semiconductor modules

Claims

[1] Semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) comprising: - a thin semiconductor element (1) having a front electrode (2) on a front side of the thin semiconductor element (1) and a back electrode (3) on a back side of the thin semiconductor element (1); - a metallic element (4, 8) formed on at least one side, the front side of the front electrode (2) and / or the back side of the back electrode (3), wherein the metallic element (4, 8) has a thickness equal to or greater than the thickness of the thin semiconductor element (1); and - a resin member (5) which is in contact with a lateral side surface of the metallic member (4, 8) from a front side of the metallic member (4, 8) to a back side of the metallic member (4, 8), and with a lateral side surface of the back electrode (3) and surrounds the periphery of the metallic member (4, 8), wherein the resin member (5) covers an outer peripheral region of at least one side of the front side of the thin semiconductor element (1) and / or the back side of the thin semiconductor element (1) in which no back side electrode (3) is formed, and wherein the resin member (5) is in contact with the back side of the thin semiconductor element (1), and wherein a region of the front side of the thin semiconductor element (1) is exposed, and wherein the thickness of the front electrode (2) and the thickness of the rear electrode (3) is smaller than the thickness of the metallic element (4, 8). [2] The semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) according to claim 1, wherein the resin member (5) surrounds a periphery of the thin semiconductor element (1). [3] The semiconductor device (600, 800) according to claim 1 or 2, wherein the front side of the metallic element (4) is in contact with the back side of the back electrode (3), and the metallic element (4) is larger than the back electrode (3). [4] The semiconductor device (600, 800) according to claim 3, wherein the resin member (5) covers an outer peripheral region of at least one of the front side of the metallic member (4) and the back side of the metallic member (4). [5] The semiconductor device (200, 700) according to claim 1, wherein the metallic member (4) is smaller than the backside electrode (3), the front side of the metallic member (4) is in contact with the backside of the backside electrode (3), and the resin member (5) is in contact with the backside of the backside electrode (3). [6] The semiconductor device (400, 500, 1200) according to claim 1, wherein the back surface of the metallic member (8) is in contact with the front surface of the front electrode (2), and the resin member (5) is higher or lower than the height of the front surface of the metallic member (8). [7] A semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) according to any one of claims 1 to 6, wherein the thin semiconductor element (1) has a thickness of not less than 30 µm and not more than 150 µm. [8] Semiconductor component (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) according to one of claims 1 to 7, wherein the metallic element (4, 8) has a thickness such that the flexural rigidity of the metallic element (4, 8) is equal to or greater than the flexural rigidity of the semiconductor element (1) on which the metallic element (4, 8) is formed. [9] A method for producing a semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200), comprising the following steps: - an electrode forming step for forming a front electrode (2) on a front side of a thin semiconductor wafer (10) and for forming a back electrode (3) on a back side of the semiconductor wafer (10); - a metallic member (4, 8) forming step for forming the metallic member (4, 8) on at least one of the front sides of the front electrode (2) and / or the rear side of the rear electrode (3); - a thin semiconductor element (1) cutting step for cutting the semiconductor wafer (10) into individual semiconductor elements; and - a resin element (5) application step for applying a resin element (5) such that the resin element (5) is in contact with a lateral side surface of the metallic element (4, 8) from a front side of the metallic element (4, 8) to a back side of the metallic element (4, 8), and with a lateral side surface of the back electrode (3) and surrounds the periphery of the metallic element (4, 8), wherein the resin member (5) covers an outer peripheral region of at least one side of the front side of the thin semiconductor element (1) and / or the back side of the thin semiconductor element (1) in which no back side electrode (3) is formed, and wherein the resin member (5) is in contact with the back side of the thin semiconductor element (1), and wherein a region of the front side of the thin semiconductor element (1) is exposed, and wherein the thickness of the front electrode (2) and the thickness of the rear electrode (3) is smaller than the thickness of the metallic element (4, 8). [10] A method of manufacturing a semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) according to claim 9, further comprising the steps of: - a thin semiconductor element (1) placement step for placing the front side of the front electrode (2) on a protective layer (6); and - a thin semiconductor element (1) separating step to detach the thin semiconductor element (1) from the protective layer (6). [11] Semiconductor module (2000) comprising: - the semiconductor component (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) according to one of claims 1 to 8; - an insulating substrate (40) with the semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) thereon; - a sealing element (70) which seals the semiconductor device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) and the insulating substrate (40); and - a cooler (90) connected to the insulating substrate (40).

Images