Cooling system

Abstract

A cooling system for a semiconductor component (1), comprising a first monolithic heat sink (2) containing a ceramic material as its main component, and a semiconductor component (1) having a first contact surface (1a), wherein the first heat sink (2) serves to cool the semiconductor component (1) and as an electrical insulator with respect to the semiconductor component (1), wherein a first metal-containing layer (3) is applied to at least one outer surface of the first heat sink (2a), said first metal-containing layer having a size corresponding at least to the area of ​​the first contact surface (1a) of the semiconductor component (1), wherein the semiconductor component (1) is attached to the first metal-containing layer (3) via the contact surface (1a) by means of a first connecting layer (4) formed by soldering or sintering, wherein an outer surface (2a) of the first heat sink (2) having the first metal-containing layer (3) is configured such thatthat the outer surface (2a) has a recess and the semiconductor component (1) is arranged in the recess, wherein a further layer (6) comprising an electrically insulating material is applied to regions of the outer surface (2a) that are not covered by the semiconductor component (1), such that a main surface (7a) of a second connecting layer (7), which is applied to a second contact surface (1b) of the semiconductor component (1), forms a flat surface (8) with an upper side (6a) of the further layer (6).

Description

[0001] The invention relates to a cooling system for a semiconductor device, comprising a heat sink and a semiconductor device.

[0002] Cooling systems for semiconductor devices are essential to quickly dissipate the heat generated by the device and thus prevent damage. Due to constantly increasing demands on the performance and miniaturization of semiconductor devices, ever more efficient and compact cooling systems are required.

[0003] Examples of the prior art for various electrical and electronic components, their wiring, and device components for their cooling are known, for example, from the published patent documents DE 10 2008 001 221 A1, DE 10 2016 200 276 A1, DE 10 2018 102 144 A1, US 6 008 535 A, WO 2018 / 020 189 A2, WO 2018 / 024 973 A1 and EP 2 565 920 A1.

[0004] Possible soldering technologies relevant to this field are also described in VIANCO, Paul T. A review of interface microstructures in electronic packaging applications: Soldering technology. Jom, 2019, Vol. 71, No. 1, pp. 158-177.

[0005] The object of the present invention is to provide an improved cooling system.

[0006] The problem is solved by a cooling system according to claim 1. Further embodiments of the cooling system can be found in the further claims.

[0007] The scope of the invention is defined by the claims.

[0008] A cooling system for a semiconductor device is provided, comprising a semiconductor device and a first heat sink, the main component of which is a ceramic material. The first heat sink serves to cool the semiconductor device and acts as an electrical insulator. The semiconductor device has a first contact surface via which it is mechanically connected to the first heat sink. A first metal-containing layer, with an area at least equal to the area of ​​the first contact surface of the semiconductor device, is applied to at least one outer surface of the first heat sink. The semiconductor device is attached to the first metal-containing layer via the first contact surface by means of a first bonding layer formed by soldering or sintering.

[0009] In this and the following, a compound layer is understood to be a layer that inevitably forms when the semiconductor device is attached to a metal-containing layer by means of soldering or sintering.

[0010] Furthermore, a cooling system for a semiconductor device is provided, comprising the semiconductor device and the first heat sink, wherein a second metal-containing layer may additionally be applied to the first metal-containing layer, partially or completely covering the first metal-containing layer. The semiconductor device is attached to the second metal-containing layer via the first contact surface by means of the first interconnect layer.

[0011] The use of ceramic materials as the main component of heat sinks has the advantage that certain ceramic materials exhibit thermal conductivities that enable efficient dissipation of heat generated by the semiconductor device. Furthermore, the use of heat sinks primarily composed of ceramic material has the advantage that the heat sink also acts as an electrical insulator for the semiconductor device. Due to these properties of the heat sink, the entire cooling system can be designed to be compact. In another embodiment of the cooling system, ceramic structures can be applied to areas of the first or second metal-containing layer that are not covered by the semiconductor device.The ceramic structures are applied in such a way that a main surface of a second interconnect layer, which is applied to a second contact surface of the semiconductor device, forms a flat surface with the top surfaces of the ceramic structures in the aforementioned areas. Ceramic structures can, for example, consist of a multitude of ceramic films, which are designed and / or arranged differently depending on the configuration of the cooling system.

[0012] Furthermore, the ceramic structures can also be produced using alternative manufacturing methods, such as 3D printing or injection molding.

[0013] At least two different manufacturing methods can be combined to produce the ceramic structures.

[0014] Furthermore, the ceramic structures can contain as their main component another ceramic material that has a composition different from the composition of the ceramic material contained in the heat sink.

[0015] For example, a top surface of a ceramic structure is a surface of the ceramic structure that faces a surface with which the ceramic structure is in direct contact with the first or second metal-containing layer or the first heat sink. Preferably, the top surface is parallel or approximately parallel to the surface with which the ceramic structure is in direct contact with the first or second metal-containing layer or the first heat sink.

[0016] In a further embodiment of the cooling system, the outer surface of the first heat sink, which comprises the first metal-containing layer or the first metal-containing layer and the second metal-containing layer, can be configured such that the outer surface of the first heat sink has a recess in which the semiconductor device is arranged. In this configuration, a further layer comprising an electrically insulating material is applied to areas of the outer surface of the first heat sink that are not covered by the semiconductor device. This further layer is applied such that the main surface of the second interconnect layer, which is applied to the second contact surface of the semiconductor device, forms a flat surface with a top surface of the further layer in the aforementioned areas.

[0017] The next layer can, for example, contain polyurethane as an electrically insulating material.

[0018] The term "top side of the additional layer" here and in the following refers to a side of the additional layer that is not in direct contact with the first or second metal-containing layer or the first heat sink and lies parallel or approximately parallel to the main surface of the second compound layer.

[0019] Preferably, the second contact surface of the semiconductor device is an outer surface of the semiconductor device that faces the first contact surface. Typically, such a second contact surface is parallel or approximately parallel to the first contact surface.

[0020] A flat surface, as used here and in the following, is to be understood as a surface formed by the main surface of the second bonding layer and the top surface of the further layer or top surfaces of the ceramic structures, and which has no significant elevations or depressions.

[0021] Furthermore, a third metal-containing layer, or a third metal-containing layer and a fourth metal-containing layer, can be applied to the flat surface, the third metal-containing layer completely covering at least the main surface of the second compound layer. The fourth metal-containing layer is applied to the third metal-containing layer in such a way that it partially or completely covers it. A second heat sink, which contains a ceramic material as its main component and serves to cool and electrically insulate the semiconductor device, is attached to the third or fourth metal-containing layer.

[0022] In other words, depending on the embodiment, the second heat sink is attached either to the third metal-containing layer or to the fourth metal-containing layer.

[0023] Furthermore, the first metal-containing layer, or the first and fourth metal-containing layers, can contain a metal selected from the group consisting of copper and aluminum. Preferably, the first metal-containing layer, or the first and fourth metal-containing layers, contain copper. Copper has the advantage of providing improved adhesion of the semiconductor device to the heat sink compared to aluminum.

[0024] Furthermore, the second metal-containing layer, or the second and third metal-containing layers, can contain or consist of silver. The use of silver in these layers leads to a further improvement in the connection between the semiconductor device and the heat sink.

[0025] Since the metal layers are thin compared to the spatial extent of the heat sink, the coefficient of thermal expansion of these layers has no significant impact on the cooling system. In other words, for optimal arrangement of the individual components of the cooling system, the coefficients of thermal expansion of the semiconductor device and the ceramic heat sink are the primary factors to consider. Because the coefficient of thermal expansion of the ceramic heat sink is generally similar to that of the semiconductor device, the mechanical stress on the cooling system caused by the different thermal expansions of its components can be minimized. This, in turn, increases the overall stability of the cooling system.

[0026] Furthermore, electrical conductors may be integrated into the first heat sink and / or the second heat sink and / or the ceramic structures. These conductors may contain tungsten or be made of tungsten.

[0027] Furthermore, the conductive traces can be designed to form an electromagnetically shielding layer or a multilayer component such as a capacitor. These conductive traces can also have a meandering or structured design to introduce a defined power resistance into the first heat sink and / or the second heat sink and / or the ceramic structures.

[0028] In a further embodiment of the cooling system, the cooling system can include a third heat sink, which contains a ceramic material as its main component. This third heat sink serves to cool the semiconductor device and acts as an electrical insulator. Furthermore, the third heat sink has a silicon micro-electro-mechanical system (MEMS) structure for electrical contacting the semiconductor device. Preferably, the silicon MEMS structure is configured such that the semiconductor device is in direct contact with the third heat sink via a central region of the first contact surface, and the silicon MEMS structure is in direct contact with the semiconductor device only at the periphery of the first contact surface. The electrical contact can be achieved through vias in the silicon MEMS structure containing copper.The vias establish an electrically conductive contact between the first semiconductor device and a metal-containing conduction layer.

[0029] The metal-containing conduction layer is located beneath the silicon MEMS structure. In other words, the metal-containing conduction layer is situated between the third heat sink and the silicon MEMS structure. The metal-containing conduction layer can contain any metal suitable for conducting electricity. Preferably, the metal-containing conduction layer contains copper.

[0030] In the following, the term "central region of the first contact surface" shall be understood to mean a region of the first contact surface that does not extend to an outer surface and / or outer edge of the semiconductor device in at least one spatial direction of extension of the first contact surface. Preferably, the central region does not extend to an outer surface and / or outer edge of the semiconductor device in any spatial direction of extension of the first contact surface.

[0031] In the following, the term "edge region of the first contact surface" shall be understood to mean a region of the first contact surface that is in direct contact with the central region and extends in at least one spatial direction of expansion of the first contact surface to an outer surface and / or outer edge of the semiconductor device.

[0032] Furthermore, the first heat sink and / or the second heat sink and / or the third heat sink can have a surface area increase structure on at least one additional outer surface that does not have a metal-containing layer or silicon MEMS structure. Preferably, the surface area increase structure is designed as cooling fins. These cooling fins can be surrounded by a cooling medium. A suitable cooling medium is, for example, a mixture of ethylene glycol and water.

[0033] In one embodiment, the first heat sink and / or the second heat sink and / or the third heat sink have complex structures for increasing the surface area. Such structures include, for example, fins. The design and the spacing between the fins must be optimized to ensure good flow of the cooling medium around the fins.

[0034] One possible embodiment of the described ribs are pin fins, i.e., ribs (fins) formed in the form of thin pins that cover a large number of the surface of the heat sink provided for this purpose.

[0035] Conventional manufacturing processes are generally insufficient to produce such complex surface structures. The described heat sink can be advantageously manufactured using additive manufacturing or 3D printing.

[0036] Furthermore, the third heat sink can have microchannels through which the cooling medium flows. The microchannels in the third heat sink preferably form two cooling circuits through which the cooling medium flows in different directions. Since the microchannels eliminate the need for surface area-enhancing structures, the cooling system can be designed very compactly.

[0037] In one embodiment, by appropriately positioning the microchannels, specific areas of high temperature, so-called hot spots, can be cooled.

[0038] In one embodiment, the microchannels of the cooling system include internal structures which in turn serve to increase the surface area and thus contribute to improving heat transfer.

[0039] The dimensions of the internal structures are adapted to the internal dimensions of the microchannels.

[0040] In one embodiment, the internal structures have complex geometric shapes that are optimized with respect to the required large surface area and the flow rate of the cooling medium. A high flow rate contributes to improved heat transfer.

[0041] If the flow rate is increased so that more cooling medium flows through the microchannels per specified period, a higher amount of heat can be dissipated from the cooling medium, thus increasing the heat transfer from the heat sink to the cooling medium.

[0042] Furthermore, the flow rate can be optimized by appropriately designed internal structures in such a way that dead spaces—that is, spaces between the internal structures that are poorly or barely permeated by flow—are avoided. A disadvantage of such dead spaces is the low heat dissipation and thus a reduced cooling effect.

[0043] In another embodiment, the heat sink comprises a single cooling channel through which a cooling medium is passed. In yet another embodiment, the heat sink comprises several such cooling channels.

[0044] The cooling channel(s) in turn comprise internal structures that preferably have complex geometric shapes, which are optimized with regard to the surface area and the flow rate of the cooling medium.

[0045] Due to the high complexity of the internal structures, their small dimensions and the limited accessibility for machining in the cooling channels, the internal structures are advantageously manufactured using additive manufacturing or 3D printing.

[0046] The first heat sink, the second heat sink, the third heat sink and the ceramic structures may contain as their main component a ceramic material selected from a group comprising aluminium nitride, silicon nitride and aluminium oxide.

[0047] The ceramic material used is preferably a good thermal conductor. Furthermore, these materials have the advantage of being non-electrically conductive, thus eliminating the need for additional electrical insulation layers between the element being cooled and the heat sink.

[0048] A heat sink made of the aforementioned materials and featuring the described surface-enhancing structures can be manufactured simply and advantageously using additive manufacturing. This allows for the production of a monolithic heat sink without the additional thermal resistance that arises when assembling a heat sink from multiple individual parts. Furthermore, this method increases the mechanical stability of the heat sink.

[0049] A semiconductor device can be, for example, an insulated gate bipolar transistor (IGBT).

[0050] The semiconductor component can be attached to the metal-containing layers by sintering, for example silver sintering, or by soldering. Furthermore, aluminum foam can also be used during sintering to attach the semiconductor component to the metal-containing layers. Due to the porosity of the aluminum foam, the connection is more flexible than, for example, a soldered joint, making it less susceptible to mechanical stress. This further increases the stability of the cooling system.

[0051] The following section describes various embodiments of a cooling system in more detail using schematic diagrams.

[0052] They show: Fig. 1 an embodiment of a cooling system, Fig. 2 another embodiment of a cooling system, Fig. 3 another embodiment of a cooling system, Fig. 4 another embodiment of a cooling system, Fig. 5 another embodiment of a cooling system, Fig. 6 another embodiment of a cooling system.

[0053] Identical, similar, or seemingly identical elements in the figures are marked with the same reference symbols. The figures and their proportions are not to scale.

[0054] Fig. Figure 1 shows an embodiment of a cooling system. The cooling system comprises a first heat sink 2 which contains aluminum nitride as its main component. A metal-containing layer 3, containing copper, is applied to an outer surface of the first heat sink 2a, the metal-containing layer 3 completely covering the outer surface of the first heat sink 2a. Furthermore, a semiconductor device 1 is attached to the first metal-containing layer 3 via a first contact surface 1a by means of a first compound layer 4 formed by silver sintering. Another outer surface of the first heat sink, which does not have a first metal-containing layer and is located opposite the outer surface of the first heat sink 2a, has a surface-enhancing structure 19. The surface-enhancing structure 19 is designed as cooling fins. The cooling fins are surrounded by a cooling medium based on a mixture of ethylene glycol and water (not shown).

[0055] The embodiment shown here has five layers (semiconductor component 1, first interconnect layer 4, first metal-containing layer 3, first heat sink 2, and coolant (not shown)). This results in four heat transfers from one layer to the next. Since such a structure has fewer layers and therefore fewer heat transfers than a conventional cooling system, the cooling system can be designed more compactly.

[0056] Fig. 2 shows a cooling system similar to the one in Fig. Figure 1 shows a cooling system with a second metal-containing layer 5, which contains silver. This second metal-containing layer 5 is applied to and completely covers the first metal-containing layer 3. Accordingly, the semiconductor device 1 is attached to the second metal-containing layer 5 via the first contact surface 1a and the first interconnect layer 4. The second metal-containing layer 5 improves the connection between the semiconductor device 1 and the first heat sink 2.

[0057] Fig. Figure 3 shows another embodiment of a cooling system. The cooling system comprises the first heat sink 2, in which the first metal-containing layer 3 is applied to the outer surface of the first heat sink 2a. Furthermore, the outer surface of the first heat sink 2a has a cavity. The first metal-containing layer 3 completely covers the outer surface of the first heat sink 2a. The second metal-containing layer 5 is also applied to the first metal-containing layer 3. The second metal-containing layer 5 covers the first metal-containing layer 3 only at the bottom of the cavity. The semiconductor device 1 is arranged in the cavity. The semiconductor device 1 is attached to the second metal-containing layer 5 via the first contact surface 1a by means of the first interconnect layer 4. Areas of the outer surface of the first heat sink 2a that are not covered by the semiconductor device 1 are covered by a further layer 6 comprising an insulating material.

[0058] The further layer 6, which comprises the insulating material, is designed such that a top surface 6a of the further layer 6 forms a flat surface 8 with a main surface 7a of a second interconnection layer 7, which is applied to a second contact surface 1b of the semiconductor device 1, on the aforementioned areas.

[0059] Furthermore, a third metal-containing layer 9, containing silver, is applied to the flat surface 8. A fourth metal-containing layer 10, containing copper, is applied to the third metal-containing layer 9. The semiconductor device is mechanically connected to the third metal-containing layer 9 via the second contact surface 1b and the second bonding layer 7. A second heat sink 11, which primarily contains a ceramic material, is attached to the fourth metal-containing layer 10 by means of an outer surface 11a.

[0060] It is noted that to manufacture such a cooling system, the metal-containing layers are first applied to the respective outer surfaces of the first and second heat sinks. In other words, the fourth metal-containing layer 10 is first applied to the outer surface of the second heat sink 11a, and then the third metal-containing layer 9 is applied to the fourth metal-containing layer 10. In a subsequent step, the second heat sink 11 is connected to the second bonding layer 7 and the further layer 6 via the outer surface of the second heat sink 11a.

[0061] Furthermore, the first heat sink 2 and the second heat sink 11 have structures for increasing the surface area 19 on other outer surfaces that do not have metal-containing layers and are opposite the outer surfaces of the first and second heat sinks (2a, 11a), which are designed as cooling fins.

[0062] Fig. Figure 4 shows another embodiment of a cooling system. The cooling system comprises the first heat sink 2, in which the first metal-containing layer 3 is applied to the outer surface of the first heat sink 2a. The first metal-containing layer 3 completely covers the outer surface 2a. The semiconductor device 1 is attached to the first metal-containing layer 3 via the first contact surface 1a by means of the first compound layer 4. Ceramic structures 12 are attached to areas of the first metal-containing layer 3 that are not covered by the semiconductor device 1. The ceramic structures 12 are designed such that the surfaces 12a of the ceramic structures 12 form a flat surface 8 with the main surface 7a of the second compound layer 7 in the aforementioned areas.

[0063] Furthermore, the fourth metal-containing layer 10 is applied to the flat surface 8. The semiconductor device 1 is mechanically connected to the fourth metal-containing layer 10 via the second contact surface 1b and the second interconnection layer 7. The second heat sink 11 is attached to the fourth metal-containing layer 10 by means of the outer surface of the second heat sink 11a.

[0064] Analogous to the cooling system which is in Fig. As shown in Figure 3, the first heat sink 2 and the second heat sink 11 have the surface area enlargement structures 19.

[0065] Furthermore, conductor tracks 13 containing tungsten are integrated in the first heat sink 2, the second heat sink 11 and in the ceramic structures 12.

[0066] Fig. Figure 5 shows another embodiment of a cooling system. The cooling system shown here comprises a third heat sink 14, which contains aluminum nitride as its main component. Furthermore, the third heat sink 14 has a silicon MEMS structure 15. The third heat sink 14 is shaped such that the semiconductor device 1 is in direct contact with the third heat sink 14 via a central portion M of the first contact surface 1a. The silicon MEMS structure 15 is also shaped such that it is in direct contact with an edge region R of the first contact surface 1a of the semiconductor device 1. The silicon MEMS structure has vias 17 containing copper, thereby bringing the semiconductor device 1 into electrically conductive contact with a copper-containing metal-conducting layer 16 located beneath the silicon MEMS structure 15.The third heat sink 14 has surface area enlargement structures 19 on an outer surface that does not have a silicon MEMS structure 15.

[0067] In a similar embodiment, not explicitly shown, the heat sink features complex structures for increasing the surface area. In this example, the structures are pin fins, a large number of which cover the designated surface of the heat sink 14. The distance between the individual pin fins should be kept as small as possible and corresponds approximately to the diameter of a pin fin.

[0068] The described heat sink is a monolith made of an electrically non-conductive material such as a ceramic. In this example, the heat sink 14 is made of AlN. The described design optimizes heat transfer from the element to be cooled to the cooling medium through the heat sink.

[0069] Conventional manufacturing processes are generally insufficient to produce such a monolithic heat sink with the required complex surface structures. The described heat sink is advantageously manufactured using additive manufacturing or 3D printing.

[0070] Furthermore, the described embodiment is similar to one of the previously described embodiments.

[0071] Fig. Figure 6 shows another embodiment of a cooling system. The cooling system shown here is similar to the cooling system shown in Fig. Figure 5 shows the difference in that the cooling system shown here has no cooling fins but instead microchannels 18 through which a cooling medium flows. The microchannels 18 form two cooling circuits through which the cooling medium flows in two different directions. A cooling system designed in this way allows for a very compact design.

[0072] By appropriately positioning the microchannels 18, targeted cooling of high temperature areas (hot spots) is possible.

[0073] In another embodiment, not shown, the microchannels 18 of the cooling system comprise internal structures which in turn serve to increase the surface area and thus contribute to improving heat transfer.

[0074] The internal structures feature complex geometric shapes optimized for a large surface area and the flow rate of the cooling medium. A high flow rate contributes to improved heat transfer.

[0075] Due to the increased flow rate, more cooling medium flows through the microchannels 18 per defined period, so that a higher amount of heat can be dissipated from the cooling medium, thereby increasing the heat transfer from the heat sink 14 to the cooling medium.

[0076] By using a suitable geometric design for the internal structures, dead spaces without a continuous flow of coolant can be avoided.

[0077] In another embodiment, not shown, the heat sink 14 comprises a single cooling channel through which a cooling medium is guided. In yet another embodiment, the heat sink 14 comprises several such cooling channels.

[0078] The cooling channels in turn comprise internal structures that preferably have complex geometric shapes, which are optimized with regard to a large surface area and with regard to the flow of the cooling medium.

[0079] The heat sink 14 with complex internal structures of the present embodiment is advantageously manufactured by 3D printing.

[0080] Furthermore, the described embodiments compensate for the embodiment. Fig. 6. Reference symbol list 1 Semiconductor device 1a First contact surface of the semiconductor device 1b second contact surface of the semiconductor device 2 first heat sink 2a Outer surface of the first heat sink on which a metal-containing layer is applied 3 first metal-containing layer 4 first bonding layer 5 second metal-containing layer 6 additional layers comprising an electrically insulating material 6a Top side of the next layer 7 second bonding layer 7a Main surface of the second compound layer 8 flat surface 9 third metal-containing layer 10 fourth metal-containing layer 11 second heat sink 11a Outer surface of the second heat sink on which a metal-containing layer is applied 12 ceramic structure 12a Surface of the ceramic structure 13 integrated conductor track 14 third heat sink 15 Silicon MEMS structure 16 metal-containing conduction layer 17 Via 18 microchannels 19 Structure for increasing surface area M Central area of ​​the first contact surface R Edge area of ​​the first contact surface

Claims

[1] Cooling system for a semiconductor device (1) comprising a first monolithic heat sink (2) containing a ceramic material as its main component, and a semiconductor device (1) having a first contact surface (1a), wherein the first heat sink (2) serves to cool the semiconductor device (1) and as an electrical insulator relative to the semiconductor device (1), wherein a first metal-containing layer (3) is applied to at least one outer surface of the first heat sink (2a), the layer having an area at least equal to the area of ​​the first contact surface (1a) of the semiconductor device (1), wherein the semiconductor device (1) is attached to the first metal-containing layer (3) via the contact surface (1a) by means of a first bonding layer (4) formed by soldering or sintering, wherein an outer surface (2a) of the first heat sink (2) having the first metal-containing layer (3) is configured such thatthat the outer surface (2a) has a recess and the semiconductor device (1) is arranged in the recess, wherein a further layer (6) comprising an electrically insulating material is applied to areas of the outer surface (2a) not covered by the semiconductor device (1), such that a main surface (7a) of a second interconnection layer (7), which is applied to a second contact surface (1b) of the semiconductor device (1), forms a flat surface (8) with a top surface (6a) of the further layer (6). [2] Cooling system for a semiconductor device (1) comprising a first monolithic heat sink (2) containing a ceramic material as its main component, and a semiconductor device (1) having a first contact surface (1a), wherein the first heat sink (2) serves to cool the semiconductor device (1) and as an electrical insulator relative to the semiconductor device (1), wherein a first metal-containing layer (3) is applied to at least one outer surface of the first heat sink (2a), the layer having an area at least equal to the area of ​​the first contact surface (1a) of the semiconductor device (1), wherein a second metal-containing layer (5) is applied to the first metal-containing layer (3), the layer partially or completely covering the first metal-containing layer (3), and the semiconductor device (1) is connected via the first contact surface (1a) by means of a first interconnection layer (4) formed by soldering or sintering,attached to the second metal-containing layer (5), wherein an outer surface (2a) of the first heat sink (2), which has the first metal-containing layer (3) and the second metal-containing layer (5), is configured such that the outer surface (2a) has a recess and the semiconductor device (1) is arranged in the recess, wherein a further layer (6) comprising an electrically insulating material is applied to areas of the outer surface (2a) that are not covered by the semiconductor device (1), such that a main surface (7a) of a second interconnection layer (7), which is applied to a second contact surface (1b) of the semiconductor device (1), forms a flat surface (8) with a top surface (6a) of the further layer (6). [3] Cooling system according to one of claims 1 or 2, wherein a second interconnect layer (7) is applied to a second contact surface (1b) of the semiconductor device (1), which is formed by soldering or sintering, and wherein ceramic structures (12) are applied to areas of the first metal-containing layer (3) or the second metal-containing layer (5) that are not covered by the semiconductor device (1), such that a main surface (7a) of the second interconnect layer (7) with top surfaces (12a) of the ceramic structures (12) on the said areas forms a flat surface (8). [4] Cooling system according to claim 3, wherein the ceramic structures were produced using a plurality of ceramic films and / or 3D printing processes and / or injection molding processes. [5] Cooling system for a semiconductor device (1) comprising a first heat sink (2) which contains a ceramic material as its main component, and a semiconductor device (1) which has a first contact surface (1a), wherein the first heat sink (2) serves to cool the semiconductor device (1) and as an electrical insulator relative to the semiconductor device (1), wherein a first metal-containing layer (3) is applied to at least one outer surface of the first heat sink (2a), the layer having an area at least equal to the area of ​​the first contact surface (1a) of the semiconductor device (1), wherein the semiconductor device (1) is attached to the first metal-containing layer (3) via the contact surface (1a) by means of a first interconnection layer (4) formed by soldering or sintering, wherein a second interconnection layer (7) formed by soldering or sintering is applied to a second contact surface (1b) of the semiconductor device (1),and wherein ceramic structures (12) are attached to areas of the first metal-containing layer (3) that are not covered by the semiconductor device (1), such that a main surface (7a) of the second compound layer (7) with top surfaces (12a) of the ceramic structures (12) on the said areas forms a flat surface (8). [6] Cooling system for a semiconductor device (1) comprising a first heat sink (2) which contains a ceramic material as its main component, and a semiconductor device (1) which has a first contact surface (1a), wherein the first heat sink (2) serves to cool the semiconductor device (1) and as an electrical insulator relative to the semiconductor device (1), wherein a first metal-containing layer (3) is applied to at least one outer surface of the first heat sink (2a), the layer having an area at least equal to the area of ​​the first contact surface (1a) of the semiconductor device (1), wherein a second metal-containing layer (5) is applied to the first metal-containing layer (3), the layer partially or completely covering the first metal-containing layer (3), and the semiconductor device (1) is connected via the first contact surface (1a) by means of a first interconnection layer (4) formed by soldering or sintering,attached to the second metal-containing layer (5), wherein a second interconnection layer (7) is applied to a second contact surface (1b) of the semiconductor device (1), which is formed by soldering or sintering, and wherein ceramic structures (12) are applied to areas of the second metal-containing layer (5) that are not covered by the semiconductor device (1), such that a main surface (7a) of the second interconnection layer (7) with top surfaces (12a) of the ceramic structures (12) on the said areas forms a flat surface (8). [7] Cooling system according to one of claims 1 to 6, wherein a third metal-containing layer (9), or a third metal-containing layer (9) and a fourth metal-containing layer (10) are applied to the flat surface (8), wherein the third metal-containing layer (9) completely covers at least the surface (6a) of the second compound layer (6), and the fourth metal-containing layer (10) is applied to the third metal-containing layer (9) and completely covers the third metal-containing layer (9), wherein a second heat sink (11), which contains a ceramic material as its main component and serves to cool and electrically insulate the semiconductor device (1), is attached to the third metal-containing layer (9) or the fourth metal-containing layer (10) via an outer surface of the second heat sink (11a). [8] Cooling system according to any one of claims 1 to 7, wherein the first metal-containing layer (3) or the first metal-containing layer (3) and the fourth metal-containing layer (10) contain a metal selected from the group comprising copper and aluminium. [9] Cooling system according to one of claims 1 to 8, wherein conduction paths (13) are integrated in the first cooling body (2) and / or in the second cooling body (11) and / or in the ceramic structures (12). [10] Cooling system according to claim 9, wherein the conductor tracks (13) contain tungsten or are made of tungsten. [11] Cooling system according to claim 9 or 10, wherein the conductor tracks (13) are designed to form an electromagnetically shielding layer. [12] Cooling system for a semiconductor device (1) comprising a third heat sink (14) which contains a ceramic material as its main component, wherein the third heat sink (14) serves to cool the semiconductor device (1) and as an electrical insulator against the semiconductor device (1), wherein the third heat sink (14) has a silicon MEMS structure (15) for electrical contacting the semiconductor device (1). [13] Cooling system according to claim 12, wherein the third cooling element (14) has microchannels (18) for receiving and transporting a cooling medium. [14] Cooling system according to any one of claims 1 to 13, wherein the ceramic material that is the main component of the first heat sink (2) and / or the second heat sink (11) and / or the third heat sink (14) and / or the ceramic structures (12) is selected from the group comprising aluminium nitride, silicon nitride, aluminium oxide. [15] Cooling system according to one of claims 1 to 14, wherein the first heat sink (2) and / or the second heat sink (11) and / or the third heat sink (14) has a surface area enlargement structure (19) at least on a further outer surface which does not have a metal-containing layer or silicon MEMS structure. [16] Cooling system according to claim 15, wherein the surface area enlargement structure (19) is designed as cooling fins. [17] Cooling system according to claim 15 or 16, wherein the surface area enlargement structures (19) comprise complex geometric structures optimized with respect to the flow of the cooling medium. [18] Cooling system according to one of claims 15 to 17, wherein the third cooling element (14) with the surface area enlargement structures formed thereon (19) is manufactured by additive manufacturing. [19] Cooling system according to claim 13, wherein the microchannels (18) have internal structures for increasing the surface area. [20] Cooling system according to claim 19, wherein the third heat sink (14) having microchannels (18) with internal structures is manufactured by additive manufacturing.

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