Substrate rotation device

Abstract

Substrate rotation device (100) for film formation, wherein the substrate rotation device (100) comprises the following: a main rotating mechanism that rotates around a first rotating shaft (155); an additional rotary mechanism that rotates around the first rotary shaft (155) in accordance with the rotation of the main rotary mechanism and rotates around a second rotary shaft (175) about its own axis; and a guide structure (130) that is provided around the first rotary shaft (155) and is configured to control a rotary motion of the additional rotary mechanism, wherein the main rotating mechanism includes the auxiliary rotating mechanism, wherein the second rotating shaft (175) is offset in a radial direction with respect to the first rotating shaft (155), wherein the additional rotating mechanism includes a support structure that supports a substrate (200) as an object of film formation, wherein the support structure rotates around the second rotating shaft (175), wherein the guide structure (130) has a contact surface (137B) extending in a circumferential direction with respect to the first rotating shaft (155), and is arranged on an outer side in the radial direction of the first rotating shaft (155) relative to an orbit of the auxiliary rotating mechanism, wherein the contact surface (137B) is arranged in an elliptical shape in the circumferential direction or in a ring shape which has no point symmetry in the circumferential direction, and wherein the contact surface (137B) is an inner circumferential surface facing the first rotating shaft (155) contained in the guide structure, wherein the guide structure (130) is configured to cause the auxiliary rotary mechanism to perform a circular motion in a path along the contact surface (137B) by controlling the outward displacement of the auxiliary rotary mechanism in a radial direction by means of the contact surface (137B) when the contact surface (137B) and the auxiliary rotary mechanism are in contact with each other, and wherein the additional rotation mechanism is configured to move on the contact surface (137B) and thus rotates around its own axis together with the rotation of the support structure.

Description

TECHNICAL AREA

[0001] The present disclosure relates to a substrate rotation device for film formation. STATE OF THE ART

[0002] A thin-film vapor deposition device is already known for forming thin films of uniform thickness on two or more lenses. This device includes a lens holder that rotatably supports each of the two or more lenses (see, for example, patent document 1). When the lens holder rotates in this thin-film vapor deposition device, the lenses are rotated by a planetary gear mechanism on the lens holder. Accordingly, the lenses rotate about their own axes in proportion to the rotation of the lens holder. DOCUMENTS ON THE STATE OF TECHNOLOGY PATENT DOCUMENTS

[0003] Patent document 1: JP H06 - 192 835 A

[0004] DE 40 25 659 A1 discloses a coating device with a configuration that allows the distance of a planetary gear's shaft from the gearbox's drive shaft to be changed. However, the gears rotate in sync with the sun gear. The planetary gear itself rotates only around a rotating shaft attached to the planet carrier plate. Accordingly, the planetary gear only makes a circular motion around the gearbox's drive shaft, not an elliptical motion.

[0005] US Patent 5,002,011 A discloses a coating device in which the rotation of bevel gears causes the rotation of sensors that hold the substrates, and the rotational movement of the shaft causes the rotational movement of the sensors. Accordingly, the rotational movement of the substrates does not occur in an elliptical orbit.

[0006] US Patent 3,128,205 A discloses a vacuum coating device. In the vacuum coating system, a disc contacts a wheel. The disc-shaped racks, which hold a coating target, are connected to the disc via spindles. When the wheel rotates, the racks also rotate around their own axes. The wheel is driven by a motor. Brief description of the invention; problems to be solved by the invention

[0007] Film-forming devices used in optical and semiconductor fields typically form a uniform thin film on a substrate. If a thin film with a uniform thickness can be formed on a large substrate, the costs associated with film formation can be reduced, and product productivity can be increased.

[0008] However, film material emitted as scattering particles from a film source, such as a vapor deposition source, exhibits a non-uniform spatial distribution across a substrate. This non-uniformity worsens when attempting to form a thin film over a large area of ​​the substrate.

[0009] To counteract this, the non-uniform thickness of the thin film formed on the substrate has conventionally been made uniform by using a film thickness correction plate. However, the method of equalizing film thickness using a film thickness correction plate requires precise positioning of the plate on the substrate and furthermore, reshaping the plate according to a spatial distribution of scattering particles.

[0010] As in the cited reference 1, it is also possible to form an essentially uniform film thickness on the substrate, while preventing the influence of the non-uniform spatial distribution of the scattering particles, by using a technique of rotating and circulating a substrate, such as a lens, which is the object of film formation, during the film formation process. However, this technique leaves room for improvement in the uniformity of the thin film.

[0011] The problem is solved by the features of claim 1. Advantageous and expedient further developments are specified in the dependent claims.

[0012] Thus, according to some embodiments of the present disclosure, it is preferred that a technique be provided which is suitable for forming a film on a substrate with a more uniform thickness than that of a conventional one. MEANS TO SOLVE THE PROBLEMS

[0013] According to some embodiments, a substrate rotation device is provided for film formation. The substrate rotation device comprises a main rotation mechanism, an auxiliary rotation mechanism, and a guide structure. The main rotation mechanism rotates around a first rotating shaft.

[0014] The main rotation mechanism includes the auxiliary rotation mechanism. The auxiliary rotation mechanism rotates around the first rotating shaft in accordance with the rotation of the main rotation mechanism and also rotates around a second rotating shaft. The auxiliary rotation mechanism includes a support structure that supports a substrate as the object of film formation. The support structure rotates around the second rotating shaft. The second rotating shaft is radially offset from the first rotating shaft.

[0015] The guide structure is positioned around the first rotating shaft and configured to control the rotation of the auxiliary rotary mechanism. The guide structure has a contact surface that extends circumferentially with respect to the first rotating shaft. The guide structure controls the radial displacement of the second rotating shaft and causes the auxiliary rotary mechanism to perform its rotation along a path on the contact surface when the contact surface and the auxiliary rotary mechanism are in contact.

[0016] As with conventional methods, in a process for rotating and rotating a support structure for a substrate as an object for film formation around its own axis by using a planetary gear mechanism, the orbit is circular. A disclosing party to the present disclosure has noted that such a circular orbit hinders the highly accurate formation of a film with a uniform film thickness on a substrate.

[0017] Since the guide structure allows control of the orbit of the support structure, in some embodiments of the substrate rotating device described above, the orbit is not limited to a circular path, in contrast to the planetary gear mechanism where the orbit of the support structure is limited to a shape corresponding to a gear. That is, in some embodiments, the substrate rotating device can achieve an orbit other than a circular one by having the guide structure have a shape other than a perfect circle.

[0018] Accordingly, some embodiments allow greater design freedom for the support structure and a rotational movement of the substrate. This design freedom enables all points on the substrate to be shifted as a single object of film formation with respect to a spatial distribution of the film material, thus eliminating any non-uniformity in the aforementioned spatial distribution. Therefore, some embodiments can provide the substrate rotation device for film formation, which enables the formation of a uniform thin film on the substrate with high accuracy.

[0019] According to some embodiments, the contact surface can be an inner circumferential surface facing the rotating shaft contained in the guide structure. The inner circumferential surface can control a displacement of the auxiliary rotating mechanism towards an outer side in the radial direction.

[0020] A centrifugal force acts on the auxiliary rotating mechanism within a rotating system of the main rotating mechanism, acting in a radially outward direction. This means the auxiliary rotating mechanism attempts to shift itself in this radially outward direction. Contact between the auxiliary rotating mechanism and the inner circumferential surface of the guide structure regulates this displacement due to the centrifugal force, enabling the auxiliary rotating mechanism to rotate stably along the path of the guide structure's inner circumferential surface. This allows for highly accurate control of the support structure's rotational movement. This high-precision control contributes to the formation of a film with a uniform thickness.

[0021] According to some embodiments, the main rotating mechanism may include a rotating plate that rotates around the first shaft. The rotating plate may have a slot in the radial direction. The auxiliary rotating mechanism may include the second rotating shaft that enters the slot.

[0022] The auxiliary rotary mechanism can include a rotary table with a support structure located at the first end of the second rotary shaft. The auxiliary rotary mechanism can also include a wheel at the second end opposite the first end of the second rotary shaft, with the wheel running on the contact surface of the guide structure. As the wheel rotates on the contact surface in a rotary motion, both the wheel and the rotary table, coupled via the second rotary shaft, can rotate about their own axes.

[0023] The substrate rotation device as described above can achieve rotation and turning along the guide structure of the auxiliary rotation mechanism through a relatively simple mechanical structure.

[0024] According to some embodiments, the auxiliary rotation mechanism can be coupled to the main rotation mechanism via a spring that preloads the auxiliary rotation mechanism in one direction, pressing it against the contact surface. Such preloading enables the auxiliary rotation mechanism to rotate stably and accurately along the second contact surface of the guide structure.

[0025] According to some embodiments, the substrate rotation device can be configured such that the auxiliary rotation mechanism performs a circular motion around the first rotating shaft in an elliptical path. According to some embodiments, the contact surface of the guide structure can be arranged in an elliptical shape in a circumferential direction.

[0026] According to some embodiments, the contact surface of the guide structure can be arranged in a ring shape that does not exhibit point symmetry in the circumferential direction. The additional rotating mechanism can perform the orbital motion around the first rotating shaft in a path without point symmetry. Such an orbit is advantageous for the formation of a film with a uniform thickness. This is because the spatial distribution of the film material often exhibits a distribution with point symmetry.

[0027] According to some embodiments, the guide structure can include a sliding mechanism for moving at least a portion of the contact surface in the radial direction. In the substrate rotation device containing the sliding mechanism, a user can adjust the orbit via the sliding mechanism, thereby enabling the formation of the film with a uniform film thickness on the substrate with higher accuracy. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a conceptual diagram of a device comprising a substrate rotation device for vapor deposition of dielectric films in some embodiments. Fig. Figure 2 is a schematic top view of the substrate rotation device in some embodiments. Fig. Figure 3 is a schematic top view of a guide device in some embodiments. Fig. Figure 4 is a schematic sectional view of the substrate rotation device along rotating shafts in some embodiments. Fig. Figure 5 is a schematic rear view of a main rotary device on which an additional rotary device is mounted in some embodiments. Fig. Figure 6 is a schematic sectional view of the additional rotary device in a cross-section orthogonal to a longitudinal direction of a slot in some embodiments. Fig. Figure 7A is a schematic representation illustrating a circular motion and a rotary motion in some embodiments. Fig. Figure 7B is a schematic representation illustrating the circular motion and the rotary motion in some embodiments. Fig. Figure 8 is a diagram showing experimental results regarding film thickness. Fig. Figure 9 is a schematic representation showing a profile of a guide rail in a circumferential direction, in some embodiments. Fig. Figure 10 is a schematic representation showing a configuration of the guide rail that includes sliding mechanisms in some embodiments. EXPLANATION OF THE REFERENCE NUMBERS

[0028] 1... Device for vapor separation of dielectric films, 10... Vapor separation source, 15... Container, 100... Substrate rotating device, 110... Motor, 130... Guide device, 131... Base plate, 133... Ball bearing, 135... Shaft, 137... Guide element, 137A... Guide rail, 137B... Inner circumferential surface, 137C... Base plate, 137D... Hole, 139A... Guide rail, 141... First sliding mechanism, 142... Second sliding mechanism, 150... Main rotating device, 151... Main rotating plate, 155... Shaft, 159... Slot, 170... Auxiliary rotating device, 171... Rotary table, 171A... Recess, 171B... Cavity, 175... Shaft, 179... Wheel, 179A... Wheel body 179B...O-ring, 180... Single shaft sliding stage, 181... Stage body, 181A... Ball bearing, 185... Spring structure, 185A... Spring, 185B... Spring fixing part, 190... Substrate rotating device, 200... Substrate, RS... Light receiving sensor. METHOD OF IMPLEMENTATION OF THE INVENTION

[0029] Some embodiments are described below with reference to the accompanying drawings.

[0030] In some embodiments, a substrate rotating device 100 is used for film formation in the vapor deposition of dielectric films or crystal growth. To assist in the formation of a uniform thin film on a substrate 200, the substrate rotating device 100 receives power from a motor 110 to rotate the substrate 200 as the film formation object and around its own axis.

[0031] Examples of substrates include not only optical substrates but also substrates for the fabrication of semiconductor devices. Film formation on optical substrates is performed, for example, to impart specific optical properties to the optical substrates. Examples of optical substrates include not only flat substrates but also substrates with a concave or complex surface.

[0032] As in Fig. As shown in Figure 1, the substrate rotating device 100 is arranged, for example, in a container 15 of a device 1 for vapor deposition of dielectric films, which has two or more vapor deposition sources 10. In the substrate rotating device 100, a surface of the substrate 200 is oriented towards the vapor deposition sources 10 as an object for film formation.

[0033] The substrate rotator 100 receives power from the motor 110, causing the substrate 200 to circulate in the container 15 and rotate about its own axis. The container 15 is kept in a vacuum. In this state, film material from the vapor deposition source 10 is vaporized, and the vaporized film material is dispersed as particles in the container 15. Fig. 1. Dashed lines conceptually represent a distribution of the scattering particles, and arrows conceptually represent directions of the scattering particle stream.

[0034] The scattering particles are applied to the substrate 200, forming a thin film on the substrate 200. When different types of thin films are layered on the substrate 200, the two or more vapor deposition sources 10 are operated sequentially. During operation, each of the vapor deposition sources 10 vaporizes a corresponding type of film material and scatters it, thus forming a corresponding type of thin film on the substrate 200.

[0035] The spatial distribution of the film material scattered from each of the vapor deposition sources 10 on the substrate 200 exhibits a geometric shape that is essentially point symmetry. The closer the film materials are to the center, the greater the amount of scattered film material. The further the film materials are from the center, the smaller the amount of scattered film material.

[0036] Accordingly, the film thickness λ of the thin film formed on the substrate 200 typically exhibits a distribution according to a function λ=T(r)=T0+k1·r+k2·r 2 +k3· r 3 +..., t, that is, the distribution according to a univariate polynomial with a distance r from the center as a single variable. In the case that the film formation is carried out in a state in which the substrate 200 does not rotate and is stationary, the coefficients k1, k2, k3, ... correspond to a control distribution of the filling material.

[0037] In the substrate rotating device 100, the substrate 200 is rotated in some embodiments and turned about its own axis, thereby shifting all points on the substrate 200 with respect to the scattering distribution of the filler material. This brings the coefficients k1, k2, k3, ... closer to zero, so that a distribution T(r) of the film thickness λ expresses only a constant term T0, thus expressing the film thickness λ with uniformity, independent of the distance r, and consequently forming a homogeneous thin film over a large area of ​​the substrate 200.

[0038] The substrate rotating device 100 achieves the formation of a more uniform thin film than a conventional one, in which an orbit is achieved that has no point symmetry and is not a perfect circle, such as an ellipse. For this orbit, the substrate rotating device 100 is as described in Fig. 2 shown configured.

[0039] The in Fig. 2 The substrate rotary device 100 shown comprises a guide device 130, a main rotary device 150 attached to the guide device 130 and two or more auxiliary rotary devices 170 attached to the main rotary device 150.

[0040] Dashed lines in Fig. Figure 2 shows a portion that, in view through a front surface of the substrate rotating device 100, is located on a rear side. Arrows in Fig. Figure 2 indicates that the main rotary device 150 performs a rotary movement and part of each auxiliary rotary device 170 performs a rotary movement and a linear movement.

[0041] As in Fig. 3 and Fig. As shown in Figure 4, the guide device 130 comprises a base plate 131, a guide member 137 and a shaft 135 which is rotatably held by the base plate 131 via a ball bearing 133.

[0042] The guide member 137 comprises a guide rail 137A and a base plate 137C with a circumferential edge having the same shaped profile as that of the guide rail 137A. As shown in Fig. As shown in Figure 4, the guide rail 137A protrudes from the circumferential edge of the base plate 137C.

[0043] The base plate 137C has a hole 137D through which the shaft 135 extends. The guide member 137 is fixed to the base plate 131, for example, by a screw, with the shaft 135 passing through the hole 137D.

[0044] The guide rail 137A is arranged around the shaft 135 in a ring shape without point symmetry in a state in which the guide member 137 is fixed to the base plate 131. In a Fig. In the example shown in Figure 3, the guide rail 137A has an elliptical profile in one circumferential direction.

[0045] The main rotary device 150 is held rotatably relative to the guide device 130. As in Fig. 2 and Fig. As shown in Figure 4, the main rotary device 150 comprises a main rotary plate 151 and a shaft 155. The shaft 155 extends from the center of the main rotary plate 151 to the guide device 130 in a normal direction to the main rotary plate 151. The shaft 155 is coupled to the main rotary plate 151 and also to a first end of the shaft 135 of the guide device 130.

[0046] The shaft 135 has a second end that projects through a rear surface of the guide device 130. The second end of the shaft 135 is coupled to the motor 110. The main rotary device 150 is arranged on the guide device 130 such that the main rotary plate 151 receives power from the motor 110 to rotate around the shaft 155.

[0047] As in Fig. As shown in Figure 2, the main turntable 151 comprises longitudinal slots 159 extending radially and spaced at 90-degree intervals. The number of auxiliary turntables 170 is equal to the number of slots 159. Each auxiliary turntable 170 passes through the corresponding slot 159.

[0048] As in Fig. 2, Fig. 4, Fig. 5 and Fig. As shown in Figure 6, each of the auxiliary rotary devices 170 comprises a rotary table 171, a shaft 175, a wheel 179, a single-shaft sliding stage 180, and a spring structure 185. Fig. 4 The single-shaft sliding step 180 is arranged in a position corresponding to the dashed lines. Fig. Details of the single-shaft sliding stage 180 are omitted in section 4.

[0049] The shaft 175 passes through the slots 159 and the single-shaft sliding step 180. The single-shaft sliding step 180 is provided along the slots 159 and fixed to a rear surface of the main turntable 151.

[0050] The single-shaft sliding step 180 holds the shaft 175 movably along the slots 159 in a radial direction of the main turntable 151. The single-shaft sliding step 180 comprises a step body 181 which has a ball bearing 181A for rotatably holding the shaft 175. The step body 181 slides along the slots 159 in the radial direction of the main turntable 151.

[0051] The first end of shaft 175 protrudes through a front surface of the main turntable 151. The first end of shaft 172 is coupled to the center of the turntable 171 on a rear surface. Consequently, the turntable 171 is located on a front surface of the main turntable, rotatable about shaft 175, and linearly movable in the radial direction of the main turntable 151 according to the movement of shaft 175.

[0052] The rotary table 171 has a circular profile and a rectangular support structure on its front for supporting the substrate 200. Specifically, the rotary table 171 has a rectangular recess 171A on its front. The recess 171A has a shape corresponding to that of the substrate 200, and the rotary table 171 supports the substrate 200 placed in the recess 171A.

[0053] As in Fig. 4 and Fig. As shown in Figure 6, the rotary table 171 has a hollow internal structure and supports an edge of the substrate 200 from a rear side of the substrate 200. The shaft 175 coupled to the rotary table 171 is a hollow cylindrical element. The rotary table 171 has a cavity 171B that is connected to the second end of the shaft 175 opposite its first end.

[0054] The second end of shaft 175 is positioned on the rear side of the main rotating plate 151. The second end of shaft 172 is equipped with a light receiving sensor RS, which covers an opening in shaft 175. The light receiving sensor RS receives a measuring light emitted from above the substrate 200 and propagating through the substrate 200 and the cavity 171B. The light receiving sensor RS outputs a signal corresponding to the luminous intensity of the received measuring light. The output signal from the light receiving sensor RS is used to measure the thickness of the thin film formed on the substrate 200.

[0055] The second end of shaft 175 is coupled to the center of wheel 179. As described above, the rotary table 171 is coupled to the first end of shaft 175, and wheel 179 is coupled to the second end of shaft 174. This causes the rotary table 171 to rotate around shaft 175 (that is, around its own axis) in accordance with a rotation of wheel 179.

[0056] Regarding the configuration of the wheel 179, an O-ring 179B is attached to a side wall of the wheel body 179A with a circular profile. The wheel 179 is positioned at a height where an inner circumferential surface 137B of the guide rail 137A is in contact with the O-ring 179B, thus allowing the wheel 179 to run on the inner circumferential surface 137B of the guide rail 137A.

[0057] This means that when the main rotary plate 171 rotates, the wheel 179 runs on the inner circumferential surface 137B of the guide rail 137A in accordance with the circular motion of the rotary table 171 generated by a rotation of the main rotary plate 171.

[0058] The spring structure 185 is designed to achieve behavior in which the wheel 179 runs stably on the inner circumferential surface 137B of the guide rail 137A without being spaced away from it and without slipping off the inner circumferential surface 137B of the guide rail 137A.

[0059] The spring structure 185 comprises two springs 185A, between which the slot 159 is arranged and which are positioned along a longitudinal direction of the slot 159. The first ends of the two springs 185A are coupled to a spring fixing element 185B on a radially outer side of the main rotating plate 151 with respect to the slot 159. The spring fixing element 185B is fixed to the rear surface of the main rotating plate 151.

[0060] The second ends of the two springs 185A, opposite their first ends, are coupled to the step body 181 of the single-shaft sliding step 180. When unloaded, the spring 185A has a shorter length than the slots 159.

[0061] Due to the spring structure 185, the wheel 179 receives a tension from the spring 185A, which is directed via the step body 181 and the shaft 175 to the radially outer side of the main turntable 151. This causes the wheel 179 to be pressed against the inner circumferential surface 137B of the guide rail 137A.

[0062] This means that the wheel 179 receives a radially outward preload force from the spring 185A and is pressed against the inner circumferential surface 137B of the guide rail 137A. This causes the wheel 179 to travel in a path along the guide rail 137A while rotating about its own axis, in a condition where it is less likely that the wheel 179 will slip off the inner circumferential surface 137B of the guide rail 137A or become separated from the guide rail 137A.

[0063] If the guide rail 137A is elliptical, as in Fig. As shown in Figure 3, the wheel 179 of the auxiliary rotating devices 170 and the turntable 171 rotate together around their own axes while orbiting in an elliptical path, as shown in Figure 3. Fig. 7A and Fig. 7B is shown. When the main turntable 151 is at an angle α in the direction of the arrow with the wheel 179, as shown in Fig. As shown in 7A, when rotated, wheel 179 moves to a position in Fig. 7B shown, so that wheel 179 follows the elliptical path. In Fig. 7A and Fig. 7B is the main turntable 151, shown by dashed lines.

[0064] During the rotation of the main turntable 151, the positions of the rotary table 171 and the wheel 179 in the radial direction of the main turntable 151 are controlled by a centrifugal force, a preload force due to the spring structure 185, and a dynamic effect from the guide rail 137A on the wheel 179, accompanied by a resistance force, to positions along the guide rail 137A. That is, the guide rail 137A controls the positions of the wheel 179 and the shaft 175 in the aforementioned radial direction by contact with the wheel 179 of the auxiliary rotary devices 170, thereby controlling the rotational movement of the turntable 171.

[0065] In some embodiments, the substrate rotating device 100 controls the orbit using the guide rail 137A, whereby the rotary table 171 supporting the substrate 200 is rotated about its own axis as it travels along the elliptical path without point symmetry. Such orbiting and rotation cause a complex displacement of all points on the substrate 200, so that the points traverse the non-uniform spatial distribution of the filler material from the vapor separation source 10. This enables the formation of the thin film with uniform thickness on the front surface of the substrate 200.

[0066] A diagram in Fig. Figure 8 shows measurement results for a comparative test. The measurement results show the film thickness λ of the substrate 200 held by the rotary table 171 and the film thickness λ of the substrate held by a substrate holding base, which were measured during film formation while the substrate rotating device 100 was rotated, in a state in which the substrate holding base was fixed between two adjacent auxiliary rotating devices 170 on the main rotating plate 171 such that it was immovable with respect to the main rotating plate 171.

[0067] A horizontal axis in the diagram indicates the position of the front surface of the substrate 200. A vertical axis in the diagram indicates the film thickness λ of the thin film formed on the front surface of the substrate 200. A solid line in the diagram shows the spatial distribution of the film thickness λ on the substrate 200 mounted on the substrate holding base. Dotted lines in the diagram show the spatial distribution of the film thickness λ on the substrate 200 mounted on the rotary table 171 in some embodiments. As described above, it can be seen that a thin film with a uniform thickness (λ) can be formed on the substrate 200 with extremely high accuracy in the substrate rotating device 100 of some embodiments.

[0068] As explained above, in some embodiments of the substrate rotating device 100, the main rotating device 150 rotates around a first rotating shaft (shafts 135, 155) according to a main rotating mechanism.

[0069] The rotary table 171, the shaft 175, and the wheel 179 of the auxiliary rotary device 170, which correspond to an auxiliary rotary mechanism, rotate about the first rotary shaft (shafts 135, 155) in accordance with the rotation of the main rotary plate 151 and rotate about their own axis about a second rotary shaft (shaft 175). The rotary table 171, the shaft 175, and the wheel 179 are mounted on the main rotary plate 171.

[0070] In the additional rotary device 170, the rotary table 171, which includes a support structure (recess 171A) of the substrate 200, is moved about the second rotary shaft (shaft 175), and furthermore the second rotary shaft (shaft 185) is moved in the radial direction of the main rotary plate 151.

[0071] The guide rail 137A, which forms a guide structure, has an inner circumferential surface 137B that is used to control a rotary motion of the auxiliary rotary devices 170. The inner circumferential surface 137B extends circumferentially with respect to the first rotating shaft (shaft 135, 155), has an annular profile without point symmetry, and faces the first rotating shaft.

[0072] The guide rail 137A brings the inner circumferential surface 137B into contact with the wheel 179 of the auxiliary rotary device 170, thereby controlling a displacement of the wheel 179 towards the radially outer side of the main rotary plate 151. This control causes the guide rail 137A to control a radial displacement of the second rotary shaft (shaft 172) and the rotary table 171 along the slots 179 such that the auxiliary rotary devices 170 perform the rotary motion in a path corresponding to the inner circumferential surface 137B (a path along the inner circumferential surface 137B).

[0073] As described above, in some embodiments the substrate rotating device 100 does not employ either a film thickness correction plate or a planetary gear mechanism. The substrate rotating device 100 enables the rotary table 171 to perform its rotational movement without point symmetry as it rotates about its own axis. Furthermore, the substrate rotating device 100 causes all points of the substrate 200 to be displaced with respect to the spatial distribution of the film material dispersed by the vapor deposition sources 10. Accordingly, the test results also show that the uniform thin film can be formed with high accuracy on the front surface of the substrate 200.

[0074] In film formation using the planetary gear mechanism, the orbit is circular. Therefore, it is difficult to detect the influence of terms of an even function of the function T(r), that is, the influence of r. n Terms of even order n can be eliminated by approximating the coefficient to zero. On the other hand, in some embodiments, the rotary table 171 can be rotated in an elliptical orbit without point symmetry. The influence of terms of an even function can be eliminated, and thus the film thickness λ can be achieved with uniformity.

[0075] Furthermore, the orbit is circular during film formation using the planetary gear mechanism. Therefore, when using two or more vapor separation sources 10 with different spatial distributions of scattering particles, it was difficult to achieve uniformity in all thin films formed by the respective vapor separation sources 10. The substrate rotation device 100 can reduce this uniformity in some embodiments. That is, the substrate rotation device 100 enables the thin film formed by each of the two or more vapor separation sources 10 to be more uniform than those formed by conventional methods.

[0076] Although vibrations tend to occur during the rotation of the planetary gear mechanism, the substrate rotating device 100 can further reduce these vibrations in some embodiments. This vibration reduction contributes to the formation of the film thickness with high accuracy.

[0077] Since the orbit is controlled by the guide rail 137A instead of a gear, a relatively large substrate rotating device 100 can easily be manufactured in some embodiments, and a system capable of forming a film of uniform thickness on a substrate 200 can be constructed. As a result, in some embodiments, costs associated with film formation can be reduced, leading to increased productivity.

[0078] In some embodiments, the centrifugal force and the preload force due to the spring structure 185 press the wheel 179 of the auxiliary rotary device 170 against the inner circumferential surface 137B of the guide rail 137A to prevent separation and slippage from the inner circumferential surface 137B. Furthermore, the rotation of the wheel 179 rotates the rotary table 171 around the second rotating shaft (shaft 175). This allows the rotational movement of the substrate 200 to be controlled with high accuracy and the thin film to be formed with high precision.

[0079] According to some embodiments, in addition to the one in Fig. In the elliptical path shown in section 3, different orbits can easily be achieved by changing the circumferential shape of the guide rail 137A. The ellipticity is not dependent on the [missing information]. Fig. The example shown is limited. For example, the orbit can have any ellipse with an ellipticity a / b of 0.99 or less, where “a” is the shortest distance in the ellipse and “b” is the longitudinal distance in the ellipse.

[0080] As in Fig. As shown in Figure 9, the guide rail 137A can be modified to a guide rail 139A, which, in addition to the elliptical profile, has an annular profile without point symmetry. The guide rail 139A can be arranged on the base plate 131 such that it meanders in the circumferential direction.

[0081] More than two guide members 137 with different guide rail shapes are manufactured, and an exchange of these guide members 137 with respect to the base plate 131 allows significantly different types of rotary movements in the substrate rotary device 100.

[0082] The substrate rotating device 100 can be equipped with a mechanism for moving the guide rails 137A, 139A. As shown in Fig. As shown in Figure 10, a substrate rotary device 190 comprises a first sliding mechanism 141 and a second sliding mechanism 142. The first sliding mechanism 141 moves a first part 1391 of the guide rail 139A in a radial direction with respect to the first rotating shaft. The second sliding mechanism 142 moves a second part 1392 of the guide rail 139A in a radial direction with respect to the first rotating shaft. The first sliding mechanism 141 and the second sliding mechanism 142 are arranged on the base plate 131 of the guide device 130. The first part 1391 and the second part 1392 of the guide rail 139A are separated from a base plate and other parts of the guide rail 139A.

[0083] The substrate rotating device 190 can be configured similarly to the substrate rotating device 100 in the embodiments described above, except that part of the guide rail 139A is configured to be movable, and the substrate rotating device 190 comprises a first and second sliding mechanism 141, 142. In the substrate rotating device 190, the orbit of the rotary table 171 is adjustable for a uniform film thickness, thereby achieving thin-film formation with high accuracy.

[0084] Examples of the substrate rotation device in some embodiments of the present disclosure have been described above. However, the substrate rotation device of the present disclosure is not limited to the embodiments mentioned above and can be modified in a variety of ways.

[0085] For example, the spring structure 185 need not be included in the substrate rotating device. Even without the spring structure 185, the wheel 179 can be sufficiently pressed onto the guide rail 137A due to centrifugal force. Furthermore, the substrate rotating device 100 shown in the drawings is conceptual, and the dimensions and shapes of each part of the substrate rotating device 100 are not limited to those shown in the drawings.

[0086] The functions of one component in the above embodiments can be distributed among two or more components. The functions of two or more components can be integrated into one component. Furthermore, some configurations of the above embodiment can be omitted. All aspects contained in the technical concept identified by the terms specified in the claims are embodiments of the present disclosure.

Claims

[1] A substrate rotating device (100) for film formation, the substrate rotating device (100) comprising: a main rotating mechanism rotating around a first rotating shaft (155); an auxiliary rotating mechanism that rotates around the first rotating shaft (155) according to the rotation of the main rotating mechanism and rotates around a second rotating shaft (175) about its own axis; and a guide structure (130) provided around the first rotating shaft (155) and configured to control an orbital movement of the auxiliary rotating mechanism, wherein the main rotating mechanism comprises the auxiliary rotating mechanism, wherein the second rotary shaft (175) is offset in a radial direction with respect to the first rotary shaft (155), wherein the auxiliary rotation mechanism comprises a support structure supporting a substrate (200) as an object of film formation, wherein the support structure rotates around the second rotary shaft (175), wherein the guide structure (130) has a contact surface (137B) extending in a circumferential direction with respect to the first rotary shaft (155) and is arranged on an outer side in the radial direction of the first rotary shaft (155) relative to an orbit of the auxiliary rotary mechanism, wherein the contact surface (137B) is arranged in an elliptical shape in the circumferential direction or in a ring shape having no point symmetry in the circumferential direction, and wherein the contact surface (137B) is an inner peripheral surface facing the first rotary shaft (155) included in the guide structure, wherein the guide structure (130) is configured to cause the auxiliary rotary mechanism to perform a revolving movement in a path along the contact surface (137B) by controlling the displacement of the auxiliary rotary mechanism outward in the radial direction by means of the contact surface (137B) when the contact surface (137B) and the auxiliary rotary mechanism are in contact with each other, and wherein the auxiliary rotation mechanism is configured to move on the contact surface (137B) and thus rotate about its own axis together with the rotation of the support structure. [2] The substrate rotating device (100) according to claim 1, wherein the main rotating mechanism comprises a rotating plate rotating around the first rotating shaft (155), and wherein the rotary plate has a slot (159) along the radial direction, wherein the additional rotating mechanism comprises: the second rotary shaft (175) passing through the slot (159), a rotary table (171) arranged in a first end part of the second rotary shaft (175) and having the support structure, and a wheel (179) arranged in a second end part opposite to the first end part and configured to run on the contact surface (137B), wherein, while the wheel (179) runs on the contact surface (137B) according to the orbital movement, the wheel (179) and the turntable (171) coupled to the wheel via the second rotary shaft (175) are configured to rotate about their own axes. [3] The substrate rotating device (100) according to claim 1, wherein the auxiliary rotating mechanism is coupled to the main rotating mechanism via a spring (185A) that biases the auxiliary rotating mechanism in a direction to press the contact surface (137B). [4] The substrate rotating device (100) according to any one of claims 1 to 3, wherein the contact surface (137B) is arranged in an elliptical shape in the circumferential direction, wherein the auxiliary rotating mechanism performs a revolving movement around the first rotating shaft (155) in an elliptical orbit. [5] Substrate rotating device (100) according to one of claims 1 to 3, wherein the contact surface (137B) is arranged in a ring shape which has no point symmetry in the circumferential direction, and wherein the auxiliary rotary mechanism is configured to perform an orbital movement around the first rotary shaft (155) in a path without point symmetry. [6] The substrate rotating device (100) according to any one of claims 1 to 5, wherein the guide structure (130) comprises a sliding mechanism (141) for moving at least a part of the contact surface (137B) in the radial direction.

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