OPTOELECTRONIC DEVICE

Abstract

Optoelectronic device comprising: - an emitter (1) configured to emit electromagnetic radiation (2) and configured to be operated with an input voltage (UI), - a receiver (3) configured to receive the electromagnetic radiation (2) and configured to provide at least a portion of an output voltage (UO), wherein: - the emitter (1) and the receiver (3) are grown laterally side by side, - an active zone (13) of the emitter (1) and an active area (33) of the receiver (3) are adjacent, and the active zone (13) of the emitter (1) and the active area (33) of the receiver (3) are not completely separated from each other during and after growth, but remain connected, and the active zone (13) and the active area (33) form a waveguide for the electromagnetic radiation (2).

Description

An optoelectronic device is specified in the present case.The publications WO 2015 / 108 488 A1, WO 93 / 07 647 A1 and US 2011 / 0 057 128 A1 describe optoelectronic devices.One object to be achieved is to specify an optoelectronic device which can be embodied in a particularly compact manner.This object is achieved, among other things, by an optoelectronic device according to claim 1. Further embodiments are the subject matter of the dependent claims.According to at least one aspect, the optoelectronic device comprises an emitter. The emitter is configured to emit electromagnetic radiation. For example, the emitter may be a device that generates electromagnetic radiation in the wavelength range between infrared radiation and ultraviolet radiation. In particular, the emitter can be configured to generate electromagnetic radiation in the wavelength range from at least 350 nm to at most 1600 nm during operation. Furthermore, the emitter is designed such that it can be operated with an input voltage. The optoelectronic device comprises, for example, two or more emitters which are connected in parallel with one another. The emitter or emitters are configured to be operated with an input voltage.According to at least one aspect of the optoelectronic device, the optoelectronic device comprises a receiver.The receiver is configured to receive the electromagnetic radiation of an emitter and to provide a portion of an output voltage of the optoelectronic device. In particular, the receiver is configured to receive the electromagnetic radiation emitted by the emitter during operation and to convert it at least partially into electrical energy. In particular, the receiver can be tuned to the emitter such that the receiver has a particularly high absorption for the electromagnetic radiation generated by the emitter.According to at least one aspect of the optoelectronic device, the emitter and the receiver are grown laterally next to one another. In particular, the emitter and the receiver are simultaneously grown. That is, in lateral directions, both elements are arranged side by side, for example. The lateral directions run, for example, parallel to a main extension surface of an active zone of the emitter and / or of an active region of the receiver. In particular, the emitter and the receiver are semiconductor components which are epitaxially grown along a growth direction on a common growth substrate which serves as a carrier for the emitter and the receiver. The lateral directions are then perpendicular to the growth direction, for example, and the growth direction is parallel to a vertical direction.The growth substrate can be present in the device, or the growth substrate is detached and replaced, for example, by another carrier. For example, the emitter and the receiver are physically connected to each other via the carrier. It is thus possible, for example, for the emitter and the receiver to be in direct physical contact with one another and to be connected, for example, by a common layer or layer sequence.According to at least one aspect of the optoelectronic device, it comprisesan emitter configured to emit electromagnetic radiation and configured to be operated with an input voltage,a receiver configured to receive the electromagnetic radiation and configured to provide at least a portion of an output voltage, whereinthe emitter and the receiver are grown laterally next to one another.According to at least one aspect of the optoelectronic device, the receiver comprises at least one photodiode. The photodiode may comprise a semiconductor body having at least one active or detecting region which is configured to absorb the electromagnetic radiation generated by the emitter during operation and to convert it into electrical energy. The photodiode can be formed, for example, from the same material system as the emitter. In particular, the receiver may comprise a plurality of photodiodes, which may be connected in series or in parallel.The optoelectronic device described herein is based, inter alia, on the following considerations.Many applications, for example in acoustics, in beam-guiding technologies such as MEMS, actuators, detectors such as avalanche photodiodes, single-photon avalanche diodes or photomultipliers, require high-voltage supplies with relatively low current consumption. For such applications, voltages above 50 V, 100 V, 500 V, 1000 V, 2000 V, 10000 V and more may be required, while at the same time the footprint needs to remain low in terms of size, weight, cost and power consumption of the devices. These characteristics are particularly important in mobile devices such as AR / VR glasses, wearable in-ear headsets, and automotive applications.Another problem to be solved in low footprint high voltage generators is the connection of low and high voltage paths which should be galvanically isolated to ensure the reliability and long term stability of a device under changing environmental conditions such as temperature, humidity, dust.The optoelectronic device described here can advantageously be used as an optical voltage converter. Furthermore, it is also possible with the optoelectronic device described here to convert a high voltage on the side of the emitters into a low voltage on the side of the receivers. Moreover, with the present apparatus, it is possible to convert an AC voltage into a DC voltage and vice versa. Finally, the present device also allows the transmission of galvanically separated energy from the side of the emitters to the side of the receivers without changing the voltage.The optoelectronic device described here can thus form, for example, a transformer which manages without inductive elements, in particular without coils. As a result, on the one hand, the installation space becomes particularly small compared to conventional transformers, and on the other hand, no magnetic fields or only small magnetic fields are generated during the transformation. This also prevents any influence from external magnetic and / or electrical fields. The optoelectronic device can thus be used in areas in which magnetic interference would be critical or the strong external magnetic fields are exposed. At the same time, the optical power transmission in the optoelectronic device ensures galvanic isolation from the high-voltage side and the low-voltage side.A further concept of the device described here consists in the combination of semiconductor light emitters and receivers, i.e. photodiodes or photovoltaic cells, in order to achieve a conversion from low voltage to high voltage. For this purpose, one or more emitters connected in parallel, which emit light, are used on the low-voltage side of the device. The wavelength of the emitted light may be between 350 nm and 1600 nm, depending on the semiconductor materials used, such as: In(Ga)N, In(Ga)AlP, (Al)GaAs, (In)GaAs. Typical input voltages are 1 V, 3 V, 5 V, 8 V, 10 V or in between.On the high voltage side, which is galvanically isolated from the low voltage side, receivers connected in series, such as photodiodes operating in photovoltaic mode, receive the emitted light. Depending on the material used, such as Si, InGaAs, GaAs, InGaN or perovskite, the photodiode generates a voltage on the order of 0.5-3 V and a current depending on the intensity of the incident light. By using multiple photodiodes, the performance of a single photodiode stack can be increased. By using a large number of photodiodes, all of which may be connected in series on very small wafer sizes, these single voltages add up to a high total voltage, which may exceed 10, 50, 100, 500, 1000, or 10000 V.Overall, the present device enables the transfer of energy and / or the conversion of voltage in a particularly compact component. The optoelectronic device is insensitive to external influences such as temperature fluctuations or electromagnetic fields.Another advantage is that there are no optical alignment problems between the emitter and receiver sides of the device, since emitter and receiver are grown laterally adjacent to each other. In addition, the device can be provided with a housing with little outlay, since receiver and emitter can already be connected by a common carrier.According to at least one aspect of the optoelectronic device, the emitter comprises an active zone configured to generate the electromagnetic radiation and the receiver comprises an active region configured to receive the electromagnetic radiation, wherein the active zone and the active region have the same composition. The fact that the active region and the active zone may have the same composition may be due to the emitter and the receiver being grown laterally next to each other. This allows emitter and receiver to grow at the same time under the same growth conditions.It is also possible that the active zone of the emitter and the active region of the receiver, which are grown laterally next to one another, have a similar composition. For example, the composition of the active region of the emitter and / or the composition of the active zone of the receiver may be altered after growth by implantation of material or other techniques that result in quantum well mixing in the active zone or the active region, for example. As a result, the active zone and the active region are no longer of the same composition in this case, but of a similar composition.In addition, the active region and the active zone can be grown by "selective surface growth". In this case, the active region and the active region are grown in different dielectric mask regions. With this technique, different band gaps and / or thicknesses of the active region and the active zone can be adjusted.According to at least one aspect of the optoelectronic device, the device comprises a carrier, wherein the emitter and the receiver are arranged laterally spaced apart on the carrier. As explained above, the carrier can be formed at least partially by a growth substrate for the emitter and the receiver. However, it is also possible that the carrier is another element, for example a printed circuit board such as a printed circuit board. With such a carrier, it is possible to electrically connect the emitter and the receiver and to operate them accordingly. For this purpose, the carrier can also have switches and / or regulators for driving the emitter and the receiver.The emitter and the receiver are arranged laterally spaced apart on the carrier, for example such that the active zone and the active region are arranged in a common plane. Even if emitter and receiver are arranged laterally spaced apart from one another, it is possible for them to be mechanically connected to one another not only by the carrier but by further elements of the device.According to at least one aspect of the optoelectronic device, the emitter is an edge-emitting semiconductor chip configured to emit the electromagnetic radiation in a lateral direction, and the receiver is configured to receive the electromagnetic radiation from the lateral direction. The lateral direction lies in the same plane as the lateral direction described above.In the present context, an edge-emitting semiconductor chip is understood to mean a radiation-emitting component which emits the electromagnetic radiation generated during operation transversely, in particular perpendicularly, to a side face or facet of the chip. The electromagnetic radiation is then emitted, for example, through the side surface or facet. In particular, the edge-emitting semiconductor chip may be a semiconductor device comprising an epitaxially grown semiconductor body. In particular, the direction in which the electromagnetic radiation is then emitted during operation can be oblique or perpendicular to a growth direction of the semiconductor body. The semiconductor body may be based on semiconductor materials such as In(Ga)N, In(Ga)AlP, (Al)GaAs, (In)GaAs, for example.The edge-emitting semiconductor chip can be, for example, a light-emitting diode or a laser diode, in particular a superluminescent diode or an edge-emitting semiconductor laser.It is also possible here for the emitter to emit the electromagnetic radiation from two sides, for example by means of two facets or side faces which are arranged opposite one another in the edge-emitting semiconductor chip.According to at least one aspect of the optoelectronic device, the active zone of the emitter and the active region of the receiver are adjacent to one another, and the active zone of the emitter and the active region of the receiver are connected to one another.In this case, the emitter and the receiver which are grown laterally next to each other are not completely separated from each other during and after the growth, but they remain connected to each other at least in their active zone and active region, respectively. In this way, it is possible that the electromagnetic radiation can be conducted from the active zone to the active region through the element connecting it. In this way, the active zone and the active region form a waveguide for the electromagnetic radiation. It is thus possible, for example, for the electromagnetic radiation to be able to be coupled into the receiver very efficiently from the emitter. It is also possible here for more than one receiver to be optically coupled to the same emitter by the active zone and the active region.If the connection between the emitter and the receiver is due to elements of the emitter and the receiver that are not removed during or after growth, the active region and the active zone may be monolithically connected to each other. That is, they are grown in the same growth process and are bonded to each other not after their production but during their production.According to at least one aspect of the optoelectronic device, the emitter is a surface-emitting semiconductor chip configured to emit the electromagnetic radiation in a vertical direction, and the receiver is configured to receive the electromagnetic radiation from the vertical direction.In the present context, a surface-emitting semiconductor chip is understood to mean a radiation-emitting component which emits the electromagnetic radiation generated during operation transversely, in particular perpendicularly, to a mounting surface on which the radiation-emitting component is mounted. In particular, the surface-emitting semiconductor chip may be a semiconductor device comprising an epitaxially grown semiconductor body. In particular, the direction in which the electromagnetic radiation is then emitted during operation can be parallel to a growth direction of the semiconductor body. The semiconductor body may be based on semiconductor materials such as In(Ga)N, In(Ga)AlP, (Al)GaAs, (In)GaAs, for example.The surface-emitting semiconductor chip can be, for example, a light-emitting diode or a laser diode, in particular a superluminescent diode or a VCSEL.According to at least one aspect of the optoelectronic device, an optical system is present which directs or conducts the electromagnetic radiation from the emitter to the receiver. The optical system comprises, for example, one or more optical elements such as reflecting and / or scattering and / or diffracting optical devices. The optical system is arranged downstream of the emitter in the vertical direction. The electromagnetic radiation emitted by the emitter is conducted, for example, along an upper side of the emitter and into an upper side of the receiver, where it is absorbed.According to at least one aspect of the optoelectronic device, the optical system is integrated into a potting body for the emitter and the receiver or the optical system is part of the potting body. According to this aspect, the emitter and the receiver are covered, for example on surfaces not covered by the carrier, by a potting body which is formed with an electrically insulating material. This electrically insulating material is transparent to the electromagnetic radiation. The potting body comprises, for example, a silicone compound, an epoxy compound or a glass material, for example a spin-on glass. The potting compound forms a mechanical and chemical protection for the emitter and the receiver against external influences. The optical system comprises, for example, optical elements which are formed by mirrored outer surfaces of the casting body, or outer surfaces of the casting body are configured for total internal reflection of electromagnetic radiation.According to at least one aspect of the optoelectronic device, the device comprises a plurality of receivers which are connected in series and / or a plurality of emitters which are connected in parallel with one another. That is to say that a plurality of receivers, for example of the same composition, and / or a plurality of emitters, for example of the same composition, are grown laterally next to one another and are arranged, for example, on a common carrier. In this case, it is possible, for example, for an emitter to be assigned to a plurality of receivers, wherein "assigned" means that the electromagnetic radiation generated by this emitter is coupled into the assigned receivers and absorbed by these.In such a device, for example, it is possible that the input voltage of the device is lower than the output voltage. The optical device can then be used to convert a lower voltage to a higher voltage.According to at least one aspect of the optoelectronic device, the device further comprises a bypass diode for the receiver, wherein the bypass diode is connected antiparallel to the receiver. Such a bypass diode can be used, for example, to bypass a non-illuminated receiver. In this way, a non-functioning or non-operated receiver is not destroyed by a reverse voltage, but the current can flow through the bypass diode connected in antiparallel.According to at least one aspect of the optoelectronic device, the bypass diode and the receiver are physically connected to one another. In this case, it is possible, for example, for the bypass diode and the receiver to be monolithically connected to one another or bonded to one another. Monolithically connected here means that the bypass diode can be epitaxially grown on the receiver. Furthermore, it is possible for the bypass diode and the receiver to be grown laterally next to one another. In this way, both elements are arranged side by side in the lateral direction, for example.In this case, the bypass diode and the receiver are semiconductor components which are epitaxially grown along a growth direction on a common growth substrate which serves as a carrier for the emitter and the receiver.The optoelectronic device described here is explained in more detail below on the basis of exemplary embodiments and the associated figures.Embodiments of the optoelectronic devices described here are explained in more detail on the basis of the schematic drawings of FIGS. 1A, 1B, 1C, 2, 3, 4, 5A, 5B, 6A and 6B.In the exemplary embodiments and figures, components of the same type or acting in the same way are provided with the same reference numerals. The elements shown in the figures and their relative sizes with respect to one another are not to be regarded as true to scale. Rather, individual elements may be represented with exaggerated size for the purpose of better illustration and / or for better understanding.FIG. 1A shows a schematic top view of an embodiment of a device described herein. FIGS. 1B and 1C show respective sectional views.In the embodiment of FIGS. 1A to 1C, the optoelectronic device comprises an emitter 1 which is configured to emit electromagnetic radiation 2 and is configured to be operated with an input voltage UI. For this purpose, the device comprises, for example, three emitters 1 which are connected in parallel with one another.The optoelectronic device further comprises receivers 3 which are configured to receive the electromagnetic radiation 2 and are configured to provide at least part of an output voltage. For this purpose, the device comprises, for example, three receivers 3 which are connected in series with one another.Each emitter 1 comprises, for example, a first contact 11 for electrically connecting the emitter, a second contact 12 and an active zone 13 in which the electromagnetic radiation 2 is generated. The emitter further comprises a first doped zone 15 and a second doped zone 16, between which the active zone is arranged. The emitter 1 of the embodiment of Figs. 1A to 1C is, for example, an edge emitting laser chip.The receiver 3 arranged adjacent to and laterally spaced apart from the emitter 1 comprises, for example, a first contact 31, a second contact 32 and an active region 33 for absorbing the electromagnetic radiation 2, which is arranged between a first doped region 35 and a second doped region 36.Emitter 1 and receiver 3 are arranged on a carrier 4, which can be a printed circuit board, for example, with which the components of the optoelectronic device can be electrically contacted and controlled.The emitters 1 and receivers 3 can be surrounded, for example, at least partially by an electrically insulating potting body 6, which forms a chemical and mechanical protection of the emitters 1 and receivers 3. In this embodiment, emitter 1 and receiver 3 are arranged in a manner associated with one another, side by side, and the active zone 13 of emitter 1 and the active region 33 of receiver 3 are connected to one another. For this purpose, for example, the doped regions and zones between the emitter 1 and the receiver 3 are at least partially removed.As can be seen from Fig. 1C, for example, the receivers are connected in series by an electrical connection 7 which connects the second contact 32 of the receiver 3 to the first contact 31 of an adjacent receiver 3. The electrical connection 7 can be embedded in the casting body 6 and can be electrically and chemically protected from external influences by this casting body.In the embodiment of Figures 1A to 1C, the emitter 1 and the associated receiver 3 are interconnected by their active zone and active region. However, it is also possible to etch grooves through the entire material between the emitter 1 and the receiver 3 and to separate the two components from one another in this way. In any case, the at least partial separation between emitter 1 and receiver 3 reduces the effect of a high input voltage at receiver 3 on the emitters. The emitters 1 can be, for example, DFB lasers (DFB: distributed feedback) or DBR lasers (DBR: distributed Bragg reflector) in order to adjust the emission wavelength of the electromagnetic radiation 2 such that optimum absorption is achieved in the receivers 3.The schematic sectional illustration of FIG. 2 shows an embodiment of an optoelectronic device described here, in which, in comparison with the embodiment of FIGS. 1A to 1C, an additional row of receivers is arranged behind a first row of receivers and further rows of receivers 3 are arranged on a side of the emitter 1 facing away from the first row of receivers 3. In this case, each emitter couples its radiation into, for example, four receivers, all of which can be connected in series with each other. With such an arrangement, a higher output voltage can be achieved. Moreover, it is possible to add further receivers for each emitter in the same manner.In all embodiments, both the emitter 1 and the receiver 3 can be components with multiple junctions and optionally with multiple wavelengths, whereby higher voltages and / or higher currents are possible.FIG. 3 shows a schematic sectional view of a device described here. The device comprises an emitter 1 comprising a surface emitting semiconductor chip. Furthermore, the device comprises a receiver 3 comprising at least one photodiode. Emitter 1 and receiver 3 are arranged on the upper side of a carrier 4.The emitter 1 has a radiation exit surface which faces away from the upper side of the carrier 4. The receiver 3 has a radiation entry surface facing away from the carrier 4.The emitter 1 and the receiver 3 are surrounded by a common potting body 6. The potting body 6 is formed with a transparent material which is transmissive for the wavelength of the electromagnetic radiation 2 generated in the emitter 1. The electromagnetic radiation 2 is, for example, in a wavelength range of at least 350 to at most 1600 nm. The potting body 6 can consist, for example, of a potting compound based on epoxy, a potting compound based on silicone or a potting compound based on glass. The sealing body 6 is formed on the emitter 1 and the receiver 3 and covers surfaces of these devices not covered by the carrier 4.The potting body 6 forms an optical system 5 for directing, guiding and / or focusing the electromagnetic radiation 2.In the embodiment of FIG. 3, the optical system 5 comprises optical elements 51 which are designed as reflecting surfaces. The electromagnetic radiation 2 emitted by the emitter 1 is initially reflected at an optical element 51 in such a way that it runs parallel to the main plane of extension or top surface of the carrier 4. After further reflection at another optical element 51, the electromagnetic radiation 2 extends perpendicularly to the main plane of extent or cover surface of the carrier 4 and impinges on the receiver 3 at its radiation inlet side.An input voltage UI is applied to the emitter 1. An output voltage UO is received by the receiver 3. The input voltage and the output voltage may be identical or different. The optoelectronic device can thus be configured for the transmission of energy and / or for the conversion of voltage.The electromagnetic radiation 2 can be deflected at the optical elements 51 by total internal reflection, for example, or the outer surface of the potting body 6 can be coated with a reflective material which is configured to reflect the electromagnetic radiation 2, for example from the infrared range. The optical element 51 may have a coating of gold or silver, for example.In conjunction with the schematic sectional view of FIG. 4, a further embodiment of a device described here is explained in more detail.In the embodiment of FIG. 4, the device comprises a plurality of receivers 3 which are arranged on the upper side of the carrier 4, for example, point-symmetrically around the emitter 1, which comprises, for example, a single surface-emitting semiconductor chip. The emitter 1 and the receiver 3 are surrounded by a potting body 6 which forms an optical system 5 which has a radiation-reflecting optical element 51. The optical element 51 deflects the electromagnetic radiation 2 generated in the emitter 1 onto the radiation inlet sides of the receivers 3. In this case, the optical element 51 is formed, for example, as a conical cutout in the casting body 6, wherein the side face of the cone is reflective.In conjunction with the schematic views of FIGS. 6A and 6B, a further embodiment of an optoelectronic device described herein is discussed. Here, each receiver 3 of the device is assigned a bypass diode 8. The bypass diode 8 may be monolithically connected to the receiver 3, for example, or it is bonded to the receiver 3. The bypass diode 8 comprises a pn junction formed by a first doped region 85 and a second doped region 86 and connected in antiparallel with the pn junction of the receiver 3, see FIG. 6B. The bypass diode 8 can bypass the receiver 3 if the receiver 3 is not irradiated by the emitter 1 or the receiver 3 is defective. In this way, the receiver 3 is not destroyed, for example, by a blocking voltage.A connection between the bypass diode 8 and the receiver 3 can be established, for example, via the contacts 31 and 32 of the receiver 3, as illustrated in FIG. 6B.In the optoelectronic device described here, it is furthermore possible for all emitters 1 to be configured such that they can be operated independently of one another. That is, for example, all the emitters 1 can be switched independently of each other, so that each emitter 1 can be operated or not. In this way, it is possible, for example, to switch off defective emitters or to control the output voltage of the optoelectronic device.In addition, all receivers 3 can be configured such that they can be operated independently of one another. That is, each receiver 3 can be switched to operation or non-operation independently of each other. This makes it possible, for example, to switch pairs of emitters 1 and receivers 3 on and off and thus control the input voltage UI and the output voltage UO.Reference numerals denote reference numerals1 Emitter 11 First contact of emitter 12 Second contact of emitter 13 Active zone of emitter 15 First doped zone of emitter 16 Second doped zone of emitter 2 Electromagnetic radiation 3 Receiver 31 First contact of receiver 32 Second contact of receiver 33 Active region of receiver 35 First doped region of receiver 36 Second doped region of receiver 4 Carrier 5 Optical system 51... 56 Optical elements 6 Casting body 7 Electrical connection 8 Bypass diode 81 First contact of bypass diode 82 Second contact of bypass diode 85 First doped region of bypass diode 86 Second doped region of bypass diode UI Input voltage UO Output voltage L Lateral direction V Vertical direction

Claims

Optoelectronic device, comprising - an emitter (1) configured to emit electromagnetic radiation (2) and configured to be operated with an input voltage (UI), - a receiver (3) configured to receive the electromagnetic radiation (2) and configured to provide at least a part of an output voltage (UO), wherein - the emitter (1) and the receiver (3) are grown laterally next to each other, - an active zone (13) of the emitter (1) and an active region (33) of the receiver (3) are next to each other and the active zone (13) of the emitter (1) and the active region (33) of the receiver (3) are not completely separated from each other during and after the growth, but remain connected to one another and the active zone (13) and the active region (33) form a waveguide for the electromagnetic radiation (2).The optoelectronic device according to the preceding claim, wherein the emitter (1) and the receiver (3) are simultaneously grown.Optoelectronic device according to any one of the preceding claims, wherein the emitter (1) comprises an active zone (13) configured to generate the electromagnetic radiation (2) and the receiver (3) comprises an active region (33) configured to receive the electromagnetic radiation (2), wherein the active zone (13) and the active region (33) have the same composition.Optoelectronic device according to one of the preceding claims, further comprising a carrier (4), wherein the emitter (1) and the receiver (3) are arranged laterally spaced apart on the carrier (4).Optoelectronic device according to one of the preceding claims, wherein the emitter is an edge-emitting semiconductor chip configured to emit the electromagnetic radiation (2) in a lateral direction (L) and the receiver (3) is configured to receive the electromagnetic radiation (2) from the lateral direction (L).Optoelectronic device according to one of claims 1 to 4, wherein the emitter is a surface-emitting semiconductor chip configured to emit the electromagnetic radiation (2) in a vertical direction (V) and the receiver (3) is configured to receive the electromagnetic radiation (2) from the vertical direction (V).Optoelectronic device according to one of the preceding claims, wherein an optical system (5) directs or conducts the electromagnetic radiation (2) from the emitter (1) to the receiver (3) and the optical system (5) is integrated into a casting body (6) for the emitter (1) and the receiver (3) or the optical system (5) is part of the casting body (6).Optoelectronic device according to one of the preceding claims, further comprising a bypass diode (8) for the receiver (3), wherein the bypass diode (8) is connected anti-parallel to the receiver (3).The optoelectronic device according to the preceding claim, wherein the bypass diode (8) and the receiver (3) are physically connected to each other.Optoelectronic device according to the preceding claim, wherein the bypass diode (8) and the receiver (3) are monolithically connected to one another or bonded to one another.Optoelectronic device according to one of the preceding claims, comprising a plurality of receivers (3) connected in series and / or a plurality of emitters (3) connected in parallel to one another.Optoelectronic device according to one of the preceding claims, wherein the input voltage (UI) is lower than the output voltage (UO).

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