SEMICONDUCTOR COMPONENT

Abstract

In a trench MOSFET with a vertical channel fin structure, even when the trench spacing is reduced to increase the channel density, a decrease and variation of a threshold voltage are suppressed. A semiconductor device 1 comprises: a plurality of trenches 2, each having, in a plan view, a longitudinal direction extending in a first direction and a transverse direction extending in a second direction, with the plurality of trenches arranged along the second direction; a source region 3 of a first conductivity type, wherein the source region comprises a fin structure defined by the plurality of trenches 2; a channel region 5 of a second conductivity type, wherein the channel region has a fin structure defined by the plurality of trenches 2; and a body region 9 of the second conductivity type.Channel region 5 is connected to body region 9, and a channel current flows vertically through channel region 5. Channel region 5 comprises a first channel region 5A, which is in contact with a lower surface of source region 3, and a second channel region 5B, which is located below the first channel region 5A, and a concentration of a second conductivity-type impurity in the first channel region 5A is greater than a concentration of the second conductivity-type impurity in the second channel region 5B.