Improved housing structure for power semiconductor module

Abstract

Improved housing structure for power semiconductor module, including a heat sink (110); at least one circuit substrate (120) arranged on the heat sink (110) and comprising at least one chip (122) forming a power semiconductor module; at least one copper nut terminal (130) arranged on the heat sink (110) or the circuit substrate (120), wherein the copper nut terminal (130) serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip (122) is electrically connected to the copper nut terminal (130) via several wires; a plastic housing side wall (140) arranged around the top of the heat sink (110), forming a filling space (142) within the plastic housing side wall (140), wherein the height of the plastic housing side wall (140) is less than the height of the copper nut terminal (130); and an insulating adhesive (160) which is filled into the filling space (142) to cover the circuit substrate (120), wherein the filling height of the insulating adhesive (160) does not exceed the height of the copper nut terminal (130), and wherein the copper nut connection (130) performs the function of the electrical connection.

Description

Technical field

[0001] The invention relates to a housing structure for printed circuit boards, in particular an improved housing structure for power semiconductor modules used in high-current applications. State of the art

[0002] With the booming electronics industry, electronic products are becoming increasingly multifunctional and powerful. Fig. 1 and Fig. Reference is made to point 2. Fig. Figure 1 shows a schematic representation of the housing structure of a state-of-the-art power semiconductor module. Fig. Figure 2 shows an exploded view of the package structure of a prior art power semiconductor module. As shown in the Fig. 1 and Fig. As shown in Figure 2, the three external connectors on the circuit board are rectangular discs. They pass through corresponding through-holes in the housing and are then bent 90 degrees in the same direction for packaging. This results in a larger overall volume. Because the external connectors are rectangular, the negative electromagnetic effects are stronger. Object of the invention

[0003] The invention provides an improved housing structure for a power semiconductor module, comprising: a heat sink; at least one circuit substrate arranged on the heat sink and comprising at least one chip, thereby forming a power semiconductor module; at least one copper nut terminal arranged on the heat sink or the circuit substrate, wherein the copper nut terminal serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip is electrically connected to the copper nut terminal via several wires; a plastic housing side wall arranged around the top of the heat sink, thereby forming a cavity within the plastic housing side wall, wherein the height of the plastic housing side wall is less than the height of the copper nut terminal;and an insulating adhesive which is filled into the filling space to cover the circuit substrate, wherein the filling height of the insulating adhesive does not exceed the height of the copper nut terminal, and wherein the copper nut terminal performs the function of the electrical connection.

[0004] In one embodiment of the invention, the chip is a diode chip, a metal oxide semiconductor (MOS) chip, a bipolar transistor (BJT) chip, a bipolar transistor with insulated gate electrode (IGBT) chip, or combinations thereof.

[0005] In one embodiment of the invention, the metal oxide semiconductor (MOS) chip, bipolar transistor (BJT) chip and bipolar transistor with insulated gate electrode (IGBT) chip are used for switching function.

[0006] In one embodiment of the invention, the number of copper nut connections is at least one.

[0007] In one embodiment of the invention, the circuit substrate additionally comprises at least one electronic component which is connected to the chip to jointly form the power semiconductor module.

[0008] The invention provides a further improved housing structure for a power semiconductor module, comprising: a heat sink; at least one circuit substrate arranged on the heat sink and comprising at least one chip, thereby forming a power semiconductor module; at least one copper nut terminal arranged on the heat sink or the circuit substrate, wherein the copper nut terminal serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip is electrically connected to the copper nut terminal via several wires, and wherein the copper nut terminal performs the function of the electrical connection; a plastic housing side wall arranged around the top of the heat sink, thereby forming a cavity within the plastic housing side wall, wherein the height of the plastic housing side wall is less than the height of the copper nut terminal;and an insulating adhesive which is filled into the filling space to cover the circuit substrate, wherein the filling height of the insulating adhesive does not exceed the height of the copper nut terminal, and wherein the chip is a diode chip and performs the rectifier function. Brief description of the drawings Fig. 1 A schematic representation of the improved housing structure for a state-of-the-art power semiconductor module, Fig. 2 an exploded view of the improved package structure for a state-of-the-art power semiconductor module, Fig. 3 a schematic representation of the improved housing structure for the power semiconductor module of the invention, Fig. 4 a partial exploded view of the improved housing structure for the power semiconductor module of the invention, Fig. 5 a representation of the improved housing structure for a power semiconductor module of a further embodiment of the invention, Fig. 6 a partial exploded view of the improved housing structure for the power semiconductor module of a further embodiment of the invention. Ways to implement the invention

[0009] After many years of research and development, the inventor has overcome the shortcomings of existing products. The following describes in detail how the present invention, through an improved housing structure for power semiconductor modules, meets the most efficient functional requirements.

[0010] On the Fig. 3, Fig. 4, Fig. 5 to Fig. Reference is made to section 6. Fig. Figure 3 shows a schematic representation of the improved housing structure for the power semiconductor module of the invention, Fig. Figure 4 shows a partial exploded view of the improved housing structure for the power semiconductor module of the invention, Fig. Figure 5 shows a representation of the improved housing structure for a power semiconductor module of a further embodiment of the invention, and Fig. Figure 6 shows a partial exploded view of the improved housing structure for a power semiconductor module of a further embodiment of the invention. As shown in the figures, the improved housing structure 100 for the power semiconductor module comprises a heat sink 110, at least one circuit substrate 120, at least one copper nut terminal 130, a plastic housing side wall 140, and an insulating adhesive 160. The circuit substrate 120 is arranged on the heat sink 110 and has at least one chip 122, thereby forming a power semiconductor module. The circuit substrate 120 can be a ceramic circuit substrate. In a further embodiment, the circuit substrate 120 further comprises at least one electronic component connected to the chip 122 to form the power semiconductor module. The copper nut terminal 130 is arranged on the heat sink 110 or the circuit substrate 120.The copper nut terminal 130 serves as a bridge between the external current and the internal current of the power semiconductor module and functions as the power connection. The chip 122 is electrically connected to the copper nut terminal 130 via several wires. The plastic housing side wall 140 is arranged around the top of the heat sink 110 to form a closed shape. A cavity 142 is formed within the plastic housing side wall 140, the height of which is less than the height of the copper nut terminal 130. The insulating adhesive 160 is filled into the cavity 142 to cover the circuit substrate 120. The height of the insulating adhesive 160 does not exceed the height of the copper nut terminal 130. Furthermore, in another embodiment, a similar function of covering the circuit substrate 120 can be achieved by an outer housing.

[0011] As in Fig. 3 and Fig. As shown in Figure 4, the chip is a diode chip, a metal-oxide-semiconductor (MOS) chip, a bipolar junction transistor (BJT) chip, an insulated-gate bipolar transistor (IGBT) chip, or combinations thereof, where combinations mean the selection of two, three, or all four. Furthermore, the chip also includes a driver chip (driver IC) used to drive a switching chip, such as a metal-oxide-semiconductor (MOS) chip, a bipolar junction transistor (BJT) chip, or combinations thereof. As shown in Fig. 5 and Fig. As shown in Figure 6, the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, and insulated-gate bipolar transistor (IGBT) chip are primarily used for switching functions, but are not limited to this. Additionally, the diode chip is used for rectification functions (e.g., full bridge or half bridge), but is not limited to this. In the figure, the number of copper nut terminals 130 is one, but is not limited to this. Multiple copper nut terminals 130 (e.g., three or more, as in the three shown) can be used. Fig. 6) can be used to allow a higher current to pass through so that the diode chip performs the rectifying function, or the metal oxide semiconductor (MOS) chip, the bipolar transistor (BJT) chip or the bipolar transistor with insulated gate electrode (IGBT) chip performs the switching function.

[0012] Furthermore, the improved housing structure includes 100 for the power semiconductor module in this embodiment, as shown in Fig. 5 and Fig. Figure 6 shows at least one control terminal 150, which serves to receive at least one external control signal to determine whether the chip 122 is conducting current. In this embodiment, there are three copper nut terminals 130 and two control terminals 150 (at least one of each). In another embodiment, the circuit substrate 120 additionally comprises at least one electronic component that is connected to the chip 122, the control terminal 150, or other components to jointly form the power semiconductor module.

[0013] Compared to the conventional solution, the frame structures of Fig. 4 and Fig. 6 of the present invention further reduce the electromagnetic radiation effect and are better suited for applications with high power or high current (e.g. above 400 amperes, but not limited thereto).

[0014] The invention thus relates to an improved housing structure for a power semiconductor module, comprising: a heat sink 110; at least one circuit substrate 120 having at least one chip 122, thereby forming a power semiconductor module; at least one copper nut terminal 130 arranged on the heat sink 110 or the circuit substrate 120, wherein the copper nut terminal 130 serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip 122 is electrically connected to the copper nut terminal 130 via several wires; a plastic housing side wall 140 in which a filling space 142 is formed; and an insulating adhesive 160 which is filled into the filling space 142 to cover the circuit substrate 120, wherein the copper nut terminal 130 performs the function of the electrical connection.The improved housing structure for the power semiconductor module of the invention can significantly reduce electromagnetic radiation and is more applicable in the high current range.

[0015] In summary, the improved housing structure for the power semiconductor module of the invention can bring the following advantages: 1. Significant reduction of electromagnetic radiation; and 2. Improved applicability in high-current applications. Reference symbol list 100 Improved housing structure for power semiconductor module 110 heat sinks 120 circuit substrate 122 Chip 130 copper nut connection 140 Plastic housing side panel 142 Filling chamber 150 control connection 160 insulating adhesive EL wire

Claims

[1] Improved housing structure for power semiconductor module, comprising a heat sink (110); at least one circuit substrate (120) arranged on the heat sink (110) and comprising at least one chip (122) forming a power semiconductor module; at least one copper nut terminal (130) arranged on the heat sink (110) or the circuit substrate (120), wherein the copper nut terminal (130) serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip (122) is electrically connected to the copper nut terminal (130) via several wires; a plastic housing side wall (140) arranged around the top of the heat sink (110), forming a filling space (142) within the plastic housing side wall (140), wherein the height of the plastic housing side wall (140) is less than the height of the copper nut terminal (130); and an insulating adhesive (160) which is filled into the filling space (142) to cover the circuit substrate (120), wherein the filling height of the insulating adhesive (160) does not exceed the height of the copper nut terminal (130), and wherein the copper nut connection (130) performs the function of the electrical connection. [2] Improved housing structure for power semiconductor module according to claim 1, characterized by that the chip is a diode chip, metal oxide semiconductor (MOS) chip, bipolar transistor (BJT) chip, bipolar transistor with insulated gate electrode (IGBT) chip or combinations thereof. [3] Improved housing structure for power semiconductor module according to claim 2, characterized by that the metal oxide semiconductor (MOS) chip, bipolar transistor (BJT) chip and bipolar transistor with insulated gate electrode (IGBT) chip are used for switching function. [4] Improved housing structure for power semiconductor module according to claim 2, characterized bythat the diode chip is used for rectification function. [5] Improved housing structure for power semiconductor module according to claim 2, characterized by at least one control terminal (150) for receiving at least one external control signal to determine whether the chip (122) allows current to pass through. [6] Improved housing structure for power semiconductor module according to claim 1, characterized by , that the number of copper nut connections (130) is at least one. [7] Improved housing structure for power semiconductor module according to claim 1, characterized by , that the circuit substrate (120) additionally comprises at least one electronic component which is connected to the chip (122) to together form the power semiconductor module. [8] Improved housing structure for power semiconductor module, comprising a heat sink (110); at least one circuit substrate (120) arranged on the heat sink (110) and comprising at least one chip (122) forming a power semiconductor module; at least one copper nut terminal (130) arranged on the heat sink (110) or the circuit substrate (120), wherein the copper nut terminal (130) serves as a bridge between the external current and the internal current of the power semiconductor module, and wherein the chip (122) is electrically connected to the copper nut terminal (130) via several wires, and wherein the copper nut terminal (130) performs the function of the current connection; a plastic housing side wall (140) arranged around the top of the heat sink (110), forming a filling space (142) within the plastic housing side wall (140), wherein the height of the plastic housing side wall (140) is less than the height of the copper nut terminal (130); and an insulating adhesive (160) which is filled into the filling space (142) to cover the circuit substrate (120), wherein the filling height of the insulating adhesive (160) does not exceed the height of the copper nut terminal (130), and where the chip (122) is a diode chip and performs the rectifier function.

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