THZ MEASURING METHOD AND THZ MEASURING DEVICE FOR MEASURING A STRAND

Description

[0001] The invention relates to a THz measuring method and a THz measuring device for measuring a strand in a measuring room.

[0002] Such a THz measuring device and a corresponding measuring method are known, for example, from DE 10 2020 133 704 A1; several THz transceivers are arranged in a common plane around a measuring chamber, which send their THz measuring beam or THz transmission beam along their optical axis to an axis of symmetry, so that the incident THz radiation is partially reflected at interfaces of the walls of the measurement object and the THz transceiver records corresponding partial reflection peaks, so that wall thicknesses and other geometric properties of the measurement object can be determined directly or indirectly from the propagation times.

[0003] EP 3 265 748 B1 discloses a THz measuring device in which THz radiation emitted by a THz transceiver is linearly focused, being focused on the symmetry axis in the measuring plane and directed parallel along the symmetry axis. For measurement, a strand is guided through the measuring device by means of a guide device of the measuring device. The guide device enables precise centering of the strand so that the interfaces of the two wall regions of the strand are exactly perpendicular to the optical axis of the THz measuring beam. The measuring beam generates partial reflection peaks at the two interfaces of the facing wall region and the two interfaces of the facing wall region, from whose transit times the wall thicknesses are determined.

[0004] Such a measuring device with a guide mechanism enables the strand to be centered in the measuring device so that the four interfaces are aligned perpendicular to the optical axis of the measuring beam. After extrusion, the strand is still hot and soft or pasty, so that it is continuously shifted due to gravity and mechanical stresses, especially thermal stresses. However, even slight misplacements result in at least one of the interfaces no longer being sufficiently orthogonal to the measuring axis, making measurement impossible. Further guidance of the strand in the production line, i.e. outside the measuring device, by a downstream puller and, for example,In a water bath, the precise positioning of the strand in the measuring device alone does not ensure sufficiently precise positioning of the strand in the measuring device, since distances of several meters are present and the soft, hot strand can bend significantly even at free distances of less than one meter. Therefore, in EP 3 265 748 B1, the precise positioning and centering is ensured by the guide device of the THz measuring device. This also ensures, in particular, the reflection of the boundary surfaces of the remote wall area back to the detector.

[0005] However, guiding the strand through the measuring device in this way is relatively complex, also because the hot, soft strand is difficult to guide. Furthermore, this additional guidance can also cause tension in the strand; in principle, it is advantageous not to place unnecessary strain on the soft, still-hardening strand, i.e. to allow the strand to cool unguided over a longer distance and to allow adjustments of the strand during hardening. Retrofitting an existing extrusion line with the THz measuring device is also made more difficult by the additional guidance device that must be provided. The particular advantage of THz measuring devices lies in contactless measurement; this is ultimately prevented by the guidance device.

[0006] Furthermore, it has been shown that the accuracy of the determined geometric values, particularly the wall thicknesses, is compromised for some measuring objects with this measuring device. For example, measurements on plastic pipes can lead to varying measurement accuracies depending on their materials, including the additives.

[0007] DE 10 2016 111 044 A1 describes a THz measuring device for measuring a test object by measuring the time of flight while determining at least one distance. The THz measuring device has a THz transmitting and receiving unit for emitting THz radiation and detecting the THz radiation reflected by the test object, and an evaluation unit for determining a time of flight and at least one distance of the test object. At least one, preferably several, passive THz receiving devices are provided such that their optical axes are offset or inclined relative to the optical axis of the THz transmitting and receiving unit and detect THz radiation emitted by the THz transmitting and receiving unit and reflected by the test object, while synchronizing the THz transmitting and receiving unit with the passive THz receiving device.

[0008] The invention is based on the object of creating a THz measuring method and a THz measuring device which enable precise determination of the geometric properties of a strand after its extrusion with little effort.

[0009] This object is achieved by a THz measurement method and a THz measurement device according to the independent claims. The subclaims describe preferred developments.

[0010] The THz measuring device according to the invention can, in particular, carry out a THz measuring method according to the invention. The THz measuring method according to the invention can, in particular, be carried out with the THz measuring device according to the invention.

[0011] Thus, when determining the layer thickness or wall thickness of the strand, only the layer thickness of the wall area facing the THz transceiver is determined. In the measurement signal, the leading or temporally first reflection peaks, in particular the first and second reflection peaks of the measurement signal, are used to calculate the layer thickness, particularly as a time-of-flight difference.

[0012] In contrast, at each measuring position the layer thickness of the respective rear wall area facing away is not determined - unlike in the case of EP 3 265 748 B1 mentioned at the beginning - or these values ​​are not used for the determination, although the subsequent reflection peaks, ie in particular the third and fourth reflection peaks in the case of a single-layer pipe, are generally available in the measuring signal.

[0013] The invention is based, in particular, on the finding that measurement of the remote wall area can often be impaired or compromised by various influencing factors. In particular, there may be a significant misplacement of the strand, which generally—as stated above—does not lie exactly with its axis of symmetry on the axis of symmetry of the measuring chamber, since an extruded, still soft tube in particular bends significantly during transport. Even a slight misplacement in the measuring plane, particularly in the remote wall area, leads to the partially reflected beams at the boundary surfaces no longer reaching the transceiver due to their longer path and greater angular misalignment.It turns out that the reflections at the boundary surfaces of the facing wall area, however, return to the transceiver to a sufficient extent to be evaluated as a signal due to the significantly shorter path and the smaller angular misalignment.

[0014] Thus, according to the invention, measurement by a THz measuring device without a guide device is also made possible. With such a THz measuring device without a guide device, only external guidance takes place at further spaced points, in particular by the puller located further back, which pulls the strand in the transport direction, as well as on the extruder itself and, for example, in a water bath spaced apart from the THz measuring device. The strand, which is still soft and subject to mechanical stresses and thermally induced shrinkage or warping, is thus measured while freely suspended, particularly in the area of ​​the THz measuring device, and can adjust itself in the measuring plane. The design of the THz measuring device without a guide device achieves several further advantages.The THz measuring device is simpler and more cost-effective, and it can also be retrofitted more easily, as additional guides can influence the overall production line. Furthermore, there is no additional mechanical stress on the soft strand; instead, the measurement is purely contactless.

[0015] For larger adjustments of the string, an adjustment device can be provided for adjusting the entire THz measuring device in both dimensions of the measuring plane, e.g., using a cross table. Such an adjustment device enables larger adjustments that cannot be compensated for by a guide device provided in the THz measuring device. Furthermore, such an adjustment device is also easily retrofittable and still enables contactless measurement of the string.

[0016] The special effect of the invention, that only facing wall areas are measured and thus a larger proportion of the radiation partially reflected at the interfaces reaches the transceiver, is further enhanced, especially when parallel radiation is used instead of the conventional focusing on the tube axis. Compared to the conventional focusing of EP 3 265 748 B1, parallel radiation has the disadvantage that, when the strand is precisely centered, part of the radiation is not reflected back along the measurement axis by the interfaces; this is particularly noticeable when reflected at the interfaces of the remote wall area. However, a sufficient proportion is still reflected back to the transceiver, especially from the interfaces of the facing wall area.Furthermore, unlike focusing on the – supposed – position of the pipe axis, a significant portion is reflected back to the transceiver even if the strand is misplaced, since a portion of the parallel radiation hits the round interfaces at a more favorable angle. Thus, the inventive effect of measuring only the facing wall area is particularly enhanced by parallel radiation.

[0017] A further advantage of the invention for measuring only facing wall areas, with subsequent averaging, lies in the signal strength of the detected radiation due to lower absorption in the material. Thus, even additives, e.g., soot as a common radiation-absorbing material, can make the measurement of the remote wall area more difficult. The THz measuring beam is partially absorbed in the material of the facing wall area and its intensity is weakened, and subsequently additionally absorbed in the remote wall area, and the partially reflected radiation is subsequently further attenuated when it crosses the facing wall area again. Furthermore, the partial reflections at the facing interfaces already lead to an attenuation of the intensity of the passing beam; multiple reflections of the partially reflected beams at the interfaces, i.e.Repeated reflections of already reflected or partially reflected radiation lead to signal attenuation and signal broadening, which are particularly relevant in the subsequent, opposite reflection peaks of the opposite wall area. By measuring only the opposite wall area, these disadvantages can be largely avoided.

[0018] Furthermore, the material of the still-soft strand can deviate from its ideal shape due to sagging effects, i.e., flow, particularly of the inner surface. This makes measuring the remote wall region particularly problematic, as even small misalignments can result in the partial reflection peaks not being reflected back along the optical axis with sufficient accuracy. A misalignment of the strand or an interface due to sagging relative to the symmetry axis of the measurement chamber generally does not result in the respective transceivers no longer receiving a reflection signal from their facing, front wall region, since the lateral deflection is small at shorter distances and for small deflection angles.While the measurement of the facing wall area is generally sufficiently accurate and reliable, even in the case of slight misalignments and absorption of the material, the measurement of the far wall area is significantly impaired by such influencing factors. For example, the subsequently reflected rays from the far wall area experience a greater lateral offset from the optical axis due to the longer path through the interior of the strand and may no longer be detected by the transceiver.

[0019] According to the invention, at least three THz measuring units are provided, each having a THz transceiver and an opposing reflector. The second and third THz measuring units are arranged in reverse alignment with respect to a central first THz measuring unit, i.e. there is an arrangement of transceivers and reflectors alternating in the circumferential direction, wherein the optical axes of the THz measuring units are offset from one another by an offset angle. In this case, the wall region facing away from the first THz measuring unit is measured as a calculation, in particular an average, of the measurements of the two adjacent THz measuring units, which each measure their facing wall region. The facing wall thickness of the first THz measuring unit can be calculated by a direct arithmetic averaging of the determined facing wall thicknesses of the adjacent THz measuring units.Thus, a measurement can be performed using only the front wall areas facing the target, with the remote wall areas being calculated or averaged using the adjacent wall areas facing the target. Surprisingly, it turns out that averaging neighboring measurements yields better results than a direct measurement of the remote measurement area, which is compromised by the aforementioned effects of misplacement, absorption, and signal broadening due to multiple reflections.

[0020] Furthermore, in the alternating arrangement, the reflectors of the adjacent measuring units can serve as apertures for the transceiver located between them, e.g., leaving only a single gap for the transceiver so that stray radiation can be shielded, resulting in a further advantageous synergistic effect. A layer thickness of the facing wall region is determined in particular from the transit times of the first reflection peak on the outer surface and the second reflection peak on the inner surface of the facing wall region. In multilayer strands, more than two reflection peaks of the facing wall region of the THz transceivers can be determined accordingly in order to determine several layer thicknesses of the strand.

[0021] The weaker subsequent, distant reflection peaks can in principle be used for comparison with the values ​​determined by averaging; however, this is generally not necessary.

[0022] According to an advantageous embodiment, more than just three THz measuring units are arranged around the measurement chamber, so that, on the one hand, the offset angle between the reflectors and neighboring transceivers is small, thereby improving the accuracy of the averaging. Furthermore, two neighboring THz measuring units are provided for each THz measuring unit, so that an average can be obtained for each THz measuring unit by the neighboring THz measuring units. Thus, advantageously, all THz measuring units are equal and enable direct measurement of their facing, front wall area and indirect measurement by the neighboring THz measuring units.

[0023] Thus, especially in the case of a dense arrangement, no additional equipment is required compared to an arrangement that uses the direct measurement signals from the remote wall area.

[0024] Furthermore, the wall thickness of the remote wall region can be determined not only by the directly adjacent THz transceivers, but also by the next but one THz transceivers or a sequence of THz transceivers in the circumferential direction. This allows for greater accuracy compared to an arithmetic averaging of only the two adjacent THz transceivers. The wall thickness profile of the strand can thus be precisely monitored over larger areas as an average, especially as a model.

[0025] The measurements can generally be performed simultaneously, as the angular offset prevents the THz transceivers from interfering with each other if the beam is sufficiently narrow. Furthermore, the measurements can also be performed alternately. With this type of alternating control, the passive transceivers can detect scattered radiation at defects or inclined interfaces, for example, due to sagging, which enables a better evaluation of inaccuracies. Furthermore, beams can also be output in different frequency ranges and polarizations; a particular advantage, however, lies in the use of identical transceivers, as this can reduce costs by using uniform THz measurement units.Measurements by multiple THz measurement units can detect any misalignment of the strand relative to the symmetry axis and use this information to evaluate the wall thickness. This prevents deviations in the measurement signals from being mistakenly interpreted as a deterioration in the strand's quality, even though the strand is merely misaligned relative to the symmetry axis. Furthermore, the determination of the misalignment can also be used to correct the strand's guidance.

[0026] The THz measuring device can thus also be designed to be stationary, i.e., non-rotating or reversing, and yet still enable circumferential measurement. In principle, the THz measuring device can also rotate or reverse in the circumferential direction, e.g., when fewer measuring units are used.

[0027] The frequency range of the THz measurement beam can be in particular in the frequency range from 5 GHz to 50 THz, in particular 10 GHz to 10 THz, in particular 20 GHz to 3 THz, preferably 50 GHz to 1 THz. Thus, the THz radiation can also extend into the range of radar radiation and / or microwave radiation. The THz measurement beam can be transmitted and detected in particular as a direct time-of-flight measurement and / or by means of frequency modulation and / or as pulsed radiation. FMCW radar, in particular, enables precise measurements because the transceivers are inexpensive and compact, allowing a large number of THz measurement units to be arranged.

[0028] Furthermore, a calibration measurement is advantageously possible in all embodiments. According to the invention, it is recognized that the total reflection peak experienced by the THz measuring beam at the reflector located behind the measuring chamber and thus behind the strand is sufficiently strong even under poor conditions, in particular significantly stronger than the partial reflections at the interfaces, since the incorrect placement of the measuring object does not influence the total reflection peak or does not influence it significantly, and that the signal from a total reflection is significantly stronger than the signals from partial reflections. The total reflection peak can therefore be included in the measurement even in the case of stronger absorption. In particular, a calibration measurement of the empty measuring chamber can first be carried out, i.e. in particular before the introduction of the measuring object, in which the idle propagation time of the THz measuring beams from the respective transceivers to the reflectors and back is measured as the total reflection peak.In this way, in combination with the subsequent measurement of the propagation time with the strand picked up, a total delay can be determined which, together with the propagation time differences of the interfaces, can be used to determine both the refractive index and the layer thickness, and in particular also geometric properties such as the outer diameter and inner diameter. Averaging the remote wall region avoids the problem that the reflector prevents a transceiver from being positioned directly in front of this wall region. Thus, according to the invention, the calibration measurement with a reflector can be combined with a measurement of only the facing wall regions. The measurement of the total reflection peak with the strand picked up can be carried out together with the measurement of the partial reflection peaks, or successively in individual measuring steps. The invention is explained in more detail below using some embodiments and the attached drawings. They show: . Fig. 1 shows a THz measuring device according to an embodiment for measuring at least one measuring axis with three measuring units; Fig. 2 shows a THz measuring device with nine measuring units consisting of a transceiver and a mirror, for measuring in nine measuring axes; Fig. 3 shows a further embodiment with straight mirrors; Fig. 3a shows a section from Fig. 3 ; and Fig. 4 shows a signal diagram during evaluation of a THz measurement signal.

[0029] A THz measuring device 1 has according to Figures 1 and 2a measuring chamber 2 through which a strand, here an extruded pipe 3, is continuously transported and measured along an axis of symmetry A. In particular, no guide device is provided here, but the pipe 3 output from an extruder is pulled off, for example, at a point at the rear in the transport direction by a puller and runs freely through the measuring chamber 2 between the extruder and the rear point, so that the pipe 2, which is still soft and subject to mechanical stresses and thermally induced shrinkage or distortion, can also adjust itself in the measuring plane and is therefore generally not guided exactly along the axis of symmetry A.

[0030] The THz measuring device 1 has several THz measuring units 4; according to Figure 1Three THz measuring units 4a, 4b, 4c are provided, each consisting of a THz transceiver 5 and a reflector 6, and, as shown, are arranged distributed circumferentially around the measuring chamber 2. Each THz transceiver 5, 5a, 5b, 5c is provided at a measuring position MP1, MP2, MP3, and the respective reflector 6, 6a, 6b, 6c is provided at a reflector position RP1, RP2, RP3.

[0031] Here, a second measuring unit 4b and a third measuring unit 4c are offset from the first measuring unit 4a. In the embodiment of the Figure 1With the three THz measuring devices 4a, 4b and 4c, the first THz measuring unit 4a is formed by the first THz transceiver 5a, which defines a first optical axis B1, and the first reflector 6a arranged opposite the first optical axis B1, corresponding to the other THz measuring units 4b, 4c. The optical axes B1, B2, B3 of the three THz measuring units 4a, 4b, 4c lie in the common measuring plane E and intersect in the axis of symmetry A. The second THz transceiver 5b and the third THz transceiver 5c are adjacent to the first reflector 6a, wherein the second optical axis B2 and the third optical axis B3 are each offset by an offset angle α from the first optical axis B1, so that the first optical axis B1 runs centrally between the optical axes B2 and B3. The offset angle α is sufficiently small to perform the averaging described below.Thus, the reflector positions RP1, RP2, RP3 of the reflectors 6a, 6b, 6c are located on the periphery of the measuring chamber 2 or the measuring device 1, respectively, between the two measuring positions MP1, MP2, MP3 of the two adjacent THz transceivers 5a, 5b, 5c. The THz measuring units 4a, 4b, 4c are preferably arranged statically around the measuring chamber 2, i.e., preferably not rotating or reversing. The THz measuring units 4a, 4b, 4c output measurement signals S1a, S1b, S1c to a control and evaluation unit 10, which performs a determination.

[0032] Before inserting the tube 3, a calibration measurement is first carried out, in which the THz measuring device 1 shown carries out a measurement with the measuring chamber 2 empty, i.e. without a strand or tube 3, which measurement is used as a calibration measurement for the subsequent determination of both the wall thickness and the refractive index. The tube 3 is then continuously guided along the axis of symmetry A through the measuring chamber 2 and measured. The THz transceiver 5a emits a THz beam 8 along its optical axis B1, which first passes through a facing wall region w1a of the tube 3, then through the interior of the tube 3 to the facing away wall region w1b of the tube 3, and finally reaches the first reflector 6a, which reflects the first THz beam 8a along the first optical axis B1 back to the first THz transceiver 5a.The first THz beam 8a is partially reflected at the interfaces of the facing wall region w1a and the remote wall region w2a, reflecting reflected THz radiation 9, which travels along the optical axis B1 to the THz transceiver 5a. Thus, the THz radiation 9 reflected at an outer surface 15 and an inner surface 14 of the tube 3 is detected by the first transceiver 5a. Thus, the THz transceiver 5a occupies a . Fig. 4shown measurement signal, which shows a first reflection peak P1 on the outer surface 15 in the facing wall area w1a, a second reflection peak P2 on the inner surface 14 in the facing wall area w1a, then, after traversing the interior of the tube, corresponding reflection peaks P3 and P4 in the remote wall area w2a of the tube 3, and the total reflection peak TP on the first reflector 6a, at the specified times t1, t2, t3, t4, and tP1. Accordingly, in the calibration measurement, only the total reflection peak TP is measured at time tP0; in the subsequent object measurement, the total reflection peak TP is shifted to a somewhat later time tP1. By comparing the measurements, both the geometric properties of the tube 3 along the first optical axis B1, i.e. in particular the outer diameter AD, inner diameter ID, and wall thicknesses wd1, wd2, as well as the refractive index n3 of the tube 3 can be determined.

[0033] According to the invention, it is advantageously recognized that when determining the remote wall thickness wd2a of the remote wall region w2a, the third and fourth reflection peaks P3 and P4 of the remote wall region w2a are not used, but are determined as an average of the measurements of the adjacent THz measuring units 4b, 4c. The temporally subsequent, remote reflection peaks P3 and P4 are significantly weaker and broader in some tubes 3 or strands, which is caused in particular by the attenuation of the THz radiation in the tube material and incorrect placement of the tube 3 with respect to the axis of symmetry A. To form the temporally subsequent reflection peaks P3 and P4, the THz measuring beam 8 and the reflected radiation 9 pass through several interfaces and a larger material width, whereby the tube material can generally also have attenuating, i.e. energy-absorbing properties, which can also be achieved in particular by additives such asCarbon black or graphite, which are added to the tube materials in varying concentrations, can also influence the optical properties. Furthermore, misplacement and shape deviations of the tube also lead to deviations in the beam path from the ideal optical axis B1, which have a more pronounced effect in the subsequent reflection peaks P3 and P4.

[0034] As shown, in the adjacent measuring units 4b and 4c the transceivers 5b and 5c are arranged adjacent to the first reflector 6a, i.e. in an alternating arrangement of the transceiver 5 and the reflector 6. The second measuring unit 4b and third measuring unit 4c carry out corresponding measurements to the first THz measuring unit 4a, i.e. the calibration measurement with the measuring chamber 2 empty, and subsequent object measurement with the pipe 3 accommodated. Here again at least the reflection peaks P1 and P2 of the THz measuring beam 5b along the optical axis B2, i.e. the partial reflections on the outer surface 13 and inner surface 14 of the pipe 3, are used, and accordingly the first measuring peak P1 and the second measuring peak P2 of the third THz measuring unit 4c along the third optical axis B3. Furthermore the total reflection peaks TP of the second and third measurements can be used.

[0035] Subsequently, the remote wall thickness wd2a is determined by averaging the measurements of the THz measuring units 4b and 4c. The wall thickness wd2 along the first optical axis B1 is calculated from an average of the wall thicknesses wd1 of the respective facing wall region along the second optical axis B2 and the third optical axis B3. This averaging can be performed, in particular, as a direct arithmetic average, i.e., half the sum of the determined wall thicknesses along the optical axes B1 and B2. Furthermore, averaging across multiple transceivers and calculations of wall profiles are also possible, as described further below.

[0036] Thus, the strong measurement peaks P1 and P2 of the respective facing wall area w1a of each THz measuring unit 4a, 4b and 4c can be used to determine both wall thicknesses w1a and w2a, as well as the further geometric properties of the tube 3, ie outer diameter AD and inner diameter ID.

[0037] In principle, it is possible to compare the averaging of the remote wall thicknesses wd2 with the measurements of the measurement peaks P3 and P4; however, this is not required.

[0038] In the design of the Figure 2 Accordingly, nine THz measuring units 4 are arranged circumferentially around the measuring chamber 2 and thus around the accommodated pipe 3, ie symmetrically to the symmetry axis A, e.g. with the same offset angle alpha to each other. Their optical axes B thus intersect in the symmetry axis A. This results in a circumferentially alternating arrangement of THz transceivers 5 and reflectors 6. Here, each THz transceiver 5 can be used as the first THz transceiver 5a according to Figure 1First, a measurement of its facing wall area w1a is carried out, and its respective remote wall area w2a is carried out by averaging the opposite, adjacent THz measuring units. Due to the symmetrical and close arrangement, a determination can thus be made with high accuracy for each THz transceiver 5 from the respectively adjacent THz measuring units 4, so that the arrangement shown here of nine THz measuring units 4 enables a complete measurement of the pipe 3 along the nine measuring axes B shown. For systems with larger diameters, 15 to 23, in particular 19, measuring units 4 can thus be provided alternately.

[0039] In the design of the Figure 3 the reflectors 6 are flat, instead of the Figures 1 and 2shown convex design. Here, parallel emitted THz measuring beams 8 are advantageously used, which have the advantage over focused THz measuring beams 8 that the travel times of the beam regions are the same; with conventional focusing or bundling of the THz measuring beams 8 by the optics of the THz transceivers 5, as is also partly done in the prior art mentioned at the beginning, longer travel paths result for outer regions of the beam than for inner ones, so that the measurement signal is negatively influenced, e.g. broadened. It is particularly evident that in the measurement of the facing wall regions w1a described above, bundling is not as helpful as in conventional measurements, in which the intensity and thus signal strength of the weaker reflection peaks is to be increased by bundling or focusing.

[0040] Thus, a parallel beam guidance according to Fig. 3ain particular with the described use of only the facing reflection peaks P1 and P2, as well as the total reflection peak TP.

[0041] In principle, the THz transceivers 5 can operate in the same frequency range because they do not interfere with each other. Thus, identical THz transceivers 5 can be used, especially when arranged close to one another, since scattered radiation is less relevant when measuring the facing wall areas w1a and improves the determination of the wall thickness facing away. Thus, according to the invention, the close arrangement also allows for a static arrangement of the THz measuring units 4, since the dense arrangement enables a largely comprehensive measurement.

[0042] Furthermore, separation is also possible, for example, through different polarizations of the THz rays.

[0043] The opposing reflectors 6 can also advantageously serve as a diffuser for the THz transceivers 5 accommodated between them, as can be seen from Figure 2 and 3 visible. In this case, the free spaces between the reflectors 6 can be kept correspondingly small in order to only allow optical radiation along the optical axes B to pass through, so that the scattering diaphragms are formed by the reflectors.

[0044] In addition to the measurement signals of the immediately adjacent measuring units 4b and 4c, the calculation of the remote wall thickness wd2a of a measuring unit 4a can include, as shown in Fig. 1As shown, measurement signals from the subsequently adjacent THz transceivers 4 can also be included, in particular in embodiments with a high number and thus high density of THz measuring units 4. Thus, the determination of the remote wall thickness wd2a of each THz measuring unit 4 can be determined as an average over several THz measuring units, in particular as a wall thickness curve.

[0045] It is therefore also possible to determine a circumferential surface profile of surfaces 14 and 15. List of reference symbols

[0046] 1 THz measuring device 2 Measuring space 3 String, in particular pipe 4 THz measuring unit 4a, 4b, 4c first to third THz measuring unit 5 THz transceiver 6 Reflector 5a, 5b, 5c first to third THz transceiver 6a, 6b, 6c first to third reflector 8 THz measuring beam 9 reflected THz radiation 10 Control and evaluation unit 14 Inner surface 15 Outer surface A Symmetry axis B, B1, B2, B3 optical axes MP1, MP2, MP3 Measuring position of the THz transceiver RP1, RP2, RP3 Reflector position of the reflector NA Neighborhood area (supplement) α Offset angle of the optical axes B P1, P2 first and second reflection peaks, facing reflection peaks P3, P4 third and fourth reflection peaks, temporally subsequent, Far-facing reflection peaks S1a, S1b, S1c Measurement signals TP Total reflection peak w1a Facing wall area w2a Far-facing wall area wd1a Facing wall thickness of the facing wall area W1a wd2a Far-facing wall thickness of the far-facing wall area W2a AD Outer diameter ID Inner diameter

Claims

1. THz measuring method for measuring a transported strand (3), in particular, an extruded pipe (3), in a measuring space (2) of a THz measuring device (1), including at least the following steps: - providing at least three THz measuring units (4) around the measuring space (2), the THz measuring units (4) each including a THz transceiver (5, 5a, 5b, 5c) with an optical axis (B) and a reflector (6; 6a, 6b, 6c) arranged in the optical axis (B) and situated opposite in the measuring space (2), - transporting the strand (3) through the measuring space (2), - for all THz measuring units (4, 4a, 4b, 4) each - emitting a THz measuring beam (8) from the THz transceiver (5) along its optical axis (B) and - detecting reflected THz radiation (9) which has been partially reflected from the wall region facing the THz transceiver (5), and detecting THz radiation (9) which has been reflected on the opposite reflector (6), and for at least a first THz measuring unit (4a) - determining a facing wall thickness (wd1a) in the first optical axis (B1) by means of a first measuring signal of the first transceiver (5a), characterised by, - determining an averted wall thickness (wd2a) of the wall region averted from the transceiver (5a) on the first optical axis (B1) by means of the measuring signals (S1b, S1c) of the THz transceivers (5b, 5c) of the adjacent THz measuring units (4b, 4c) that are adjacent in the circumferential direction to the first reflector (6a), - the THz measuring units (4) are arranged alternatingly in such a manner that a first reflector (6a) of a first THz measuring unit (4a) is adjacent to a second THz transceiver (5b) of a second THz measuring unit (4b) and a third THz transceiver (5c) of a third THz measuring unit (4c).

2. THz measuring method according to claim 1, characterised in that the averted wall thickness (wd2a) on the first optical axis (B1) is determined by means of an averaging, in particular, as the arithmetic mean, of the THz transceivers (5b, 5c) adjacent to the first reflector (6a).

3. THz measuring method according to claim 1 or 2, characterised in that the averted wall thickness (wd2a) on the first optical axis (B1) is determined without including partial reflections of the first measuring beam (8) on the boundary surfaces of the averted wall region.

4. THz measuring method according to one of the above claims, characterised in that the THz transceivers (5) each emit parallel THz measuring beams (8), and the reflectors (6) are designed flat for reflecting the parallel THz measuring beams (8).

5. THz measuring method according to one of the above claims, characterised in that the strand (3) is transported through the measuring space (2) without guidance by the THz measuring device (1) and without a guide means of the THz measuring device (1) and is contactless measured by the THz measuring device (1).

6. THz measuring method according to one of the above claims, characterised in that the multiple measuring axes (B) define a measuring plane in the measuring space (2), and the optical axes (B1, B2, B3) of the multiple THz measuring units (4; 4a, 4b, 4c) intersect in a common axis of symmetry (A) of the measuring plane, and the strand (3) is transported through the measuring plane (E) and continuously measured in the measuring plane (E), where, preferably, the strand may deviate from the axis of symmetry while being transported through the measuring plane.

7. THz measuring method according to claim 6, characterised in that upon a change in the position of the strand (3) in the measuring plane, the THz measuring units (4) are adjusted or readjusted in the measuring plane, for contactless centring of the strand (3), in particular, in the axis of symmetry of the measuring plane, e.g., by means of a cross table, for adjusting the THz measuring unit (1) in the two directions of the measuring plane.

8. THz measuring method according to claim 6 or 7, characterised in that a misplacement of the strand (3) in relation to the axis of symmetry (A) - is determined from the measuring signals and / or an external sensor, and / or - is taken into account upon determining the facing and / or averted wall thickness (wd1a, wd2a).

9. THz measuring method according to one of the above claims, characterised in that an at least single-layer strand (3) is measured, which exhibits an exterior boundary surface (15) and an interior boundary surface (14), in particular, following an extrusion of the strand (3), where the layer thickness is determined from a time-of-flight difference between reflection peaks (P1, P2) of the measuring signal.

10. THz measuring method according to one of the above claims, characterised in that prior to the object measurement and / or after the object measurement, a step of a calibration measurement with an empty measuring space (2) is carried out, in which with an empty measuring space (2) without the strand (3) at least the first THz transceiver (5; 5a, 5b, 5c), preferably all THz transceivers of the THz measuring units (4; 4a, 4b, 4c), each emit their THz measuring beam (8) along their optical axis (B1, B2, B3) und detect the total reflection peak (TP) at their associated reflector (6; 6a, 6b, 6c), und by taking the calibration measurement into account in the object measurement, the following is determined: the wall thicknesses (wd1a, wd2a), a refractive index (c3) of the material of the strand (3), preferably also an exterior diameter (AD) and / or an interior diameter (ID), of the strand (3).

11. THz measuring method according to one of the above claims, characterised in that in the circumferential direction around the measuring space (2) more than three THz measuring units (4) are arranged alternatingly, and for each THz measuring unit (4) the averted wall thickness (wd2) is determined by averaging the adjacent THz measuring units.

12. THz measuring method according to one of the above claims, characterised in that the THz transceivers (5) of the multiple THz measuring units (4) emit their THz measuring beam (8) in an alternating manner, and, preferably, the respective passive THz transceivers (5) detect scatter radiation on the strand (3), for subsequent determination of faults or irregularities of the strand (3).

13. THz measuring method according to one of the above claims, characterised in that the alternating THz measuring units (4) arranged in the circumferential direction around the measuring space (2) determine a wall thickness profile of the wall thickness and / or of the exterior diameter (AD) and / or of the interior diameter (ID) of the strand (3), in the circumferential direction.

14. THz measuring method according to one of the above claims, characterised in that for determining the averted wall thickness (wd2a), the next to adjacent facing wall thicknesses of the next to adjacent THz measuring units are used in addition to the facing wall thicknesses of the adjacent THz measuring units, for averaging across multiple THz measuring units (4).

15. THz measuring device (1) for measuring a strand (3), in particular, a pipe (3), the THz measuring device (1) comprising: a measuring space (2) with an axis of symmetry (A), for receiving the strand (3), at least three THz measuring units (4; 4a, 4b, 4c), all THz measuring units (4; 4a, 4b, 4c) each including a THz transceiver (5; 5a, 5b, 5c) for emitting a THz measuring beam (8) along its optical axis (B; B1, B2, B3) and a reflector (6; 6a, 6b, 6c) arranged on the optical axis (B1, B2, B3) and opposite the THz transceiver (5; 5a, 5b, 5c), a controller and evaluating unit (10) receiving the measuring signals (S1a, S1b, S1c) of the THz transceivers (5; 5a, 5b, 5c) and determining at least wall thicknesses (wd1a, wd2a) of the strand (3), the THz measuring units (4) being arrange in an alternating manner such that a first reflector (6a) of a first THz measuring unit (4a) is adjacent to a second THz transceiver (5b) of a second THz measuring unit (4b) and a third THz transceiver (5c) of a third THz measuring unit (4c), the controller and evaluating unit (10) being designed, in performing a measurement of the strand (3) - to determine a facing wall thickness (wd1a) of the facing wall region (w1a) from a first measuring signal (S1a) of the first transceiver (5a), characterised in that the controller and evaluating unit (10) is designed, - to determine an averted wall thickness (wd2a) of the averted wall region (w2a) of the first transceiver (5a) by means of averaging and / or interpolation from measuring signals (S1b, S1c) of the second transceiver (5b) and the third transceiver (5c).

16. THz measuring device (1) according to claim 15, characterised in that it is designed without guide means for the strand (3), and the controller and evaluating unit (10) is designed for contactless measuring of the strand (3) transported through the measuring space (2).

17. THz measuring device (1) according to claim 16, characterised in that it comprises an adjustment means for translational, common adjustment of transceivers and reflectors in the measuring plane, for readapting to the position of the strand (2) without contacting the strand.

18. THz measuring device (1) according to one of the claims 15 through 17, characterised in that the second and third THz transceivers (5b, 5c) are arranged with their optical axes (B2, B3) in relation to the first optical axis (B1) in a symmetrical arrangement at equal offset angles (α).

19. THz measuring device (1) according to one of the claims 15 through 18, characterised in that the optical axes (B2, B3) of the second and third THz transceivers (5b, 5c) have an offset angle of less than 45°, in particular, less than 30°, e.g., less than 25° in relation to the first optical axis (B1).

20. THz measuring device (1) according to one of the claims 15 through 19, characterised in that the controller and evaluating unit (10) is designed to determine, for all of the multiple THz measuring units (4) each, the averted wall thickness (wd2a) in their optical axes (B2, B3) by averaging of the adjacent THz transceivers (5).

21. THz measuring device (1) according to claim 20, characterised in that at least six THz measuring units (4), in particular, at least nine THz measuring units (4), e.g., at least 15 THz measuring units (4), are arranged in the circumferential direction around the measuring space (2), spaced apart and at least partially alternating in relation to one another, preferably at equal offset angles (α) in relation to one another, and where the controller and evaluating unit (10) is designed to carry out a circumferential measuring of the strand (3) in which - on each optical axis (B) always the facing wall region is measured by the respective THz measuring unit (4) und and the averted wall region (w2a) by means of the adjacent THz transceivers (5).

22. THz measuring device (1) according to one of the claims 15 through 21, characterised in that the THz measuring units (4) are arranged fixed or stationary around the measuring space (2).

23. THz measuring device (1) according to one of the claims 15 through 22, characterised in that for determining the averted wall thickness (wd2a) the measurements of the facing wall thicknesses of the THz transceivers next following to the adjacent THz transceivers (5b, 5c) in the circumferential direction are used additionally, for generating a wall thickness profile for determining the averted wall thickness (wd2a).

24. THz measuring device (1) according to one of the claims 15 through 23, characterised in that - the THz transceiver (5) is designed such that it emits the THz measuring beam (8) in a parallel manner, and the reflector (6) is designed flat so as to reflect the parallel THz measuring beam (8).

25. THz measuring method or THZ measuring device according to one of the above claims, characterised in that the THz measuring beam (8) lies in a frequency range of terahertz, radar or microwave radiation, in particular, between 5 GHz and 50 THz, in particular, between 10 GHZ and 10 THz, in particular, 20 GHz and 3 THz, in particular, as a time-of-flight measurement, frequency modulation, e.g., FMCW radar, and / or pulsed radiation.