Semiconductor laser with a radiation guiding element

Abstract

The invention relates to a semiconductor laser (1), wherein a radiation guiding element (3) is arranged on a laser diode (2), comprising a material or consisting of a material that can be applied by means of the laser radiation (5) on the laser diode (2). In addition, a radiation transmission element (8), in particular a radiation outlet window (8a), for a semiconductor laser (1) is provided, wherein one or more optical elements (31) are arranged on a base element (80), comprising a corresponding material. A laser housing (9) with a radiation outlet window (8a) of this type and a corresponding production method are also provided.

Description

[0001] Semiconductor laser with radiation guide element

[0002] The invention relates to a semiconductor laser with a radiation guidance element, in particular an optical element or light guide, and a corresponding manufacturing method. The invention also relates to a radiation transmission element, in particular a radiation exit window for a laser housing, with at least one optical element, and a corresponding manufacturing method.

[0003] One problem to be solved is to provide a semiconductor laser that is efficiently encapsulated and can be efficiently manufactured. A further problem is to provide a semiconductor laser with a self-aligning radiation guidance element, in particular an optical element or light guide. A further problem is to provide a corresponding radiation transmission element, in particular a radiation exit window, for a laser housing. The problems are solved by the devices and the manufacturing methods having the features of the independent claims. Preferred developments are the subject of the dependent claims.

[0004] According to one embodiment, the semiconductor laser comprises a laser diode which has an active zone for generating laser radiation and a radiation exit region via which the laser radiation can exit the laser diode. The semiconductor laser also has a radiation guide element which is arranged in the radiation exit region on the laser diode and is monolithically connected to the laser diode. The radiation guide element comprises a material or consists of a material which can be applied to the laser diode by means of the laser radiation. Particularly preferably, the radiation guide element is arranged in the radiation exit region directly (without an intermediate layer) on the laser diode or directly on a dielectric mirror. Accordingly, the radiation guide element can be applied precisely to the beam exit region in a self-aligning manner by operating the laser diode to apply the radiation guide element.

[0005] Preferably, the radiation guiding element is stable with respect to the laser radiation, also called "radiation-stable", i.e. it does not degrade in an operating state or does not degrade significantly within a usual total operating time of the semiconductor laser.

[0006] The laser diode can in principle be any semiconductor laser diode.

[0007] Due to the particularly high power densities, the so-called optical tweezers effect is particularly pronounced in edge-emitting semiconductor laser diodes. The high power densities attract organic and inorganic contaminants / compounds from the ambient air and deposit them on the laser facet. The high energy densities in the area of ​​the laser facet can lead to decomposition and deposition or accumulation of particles and decomposition products on the facet. This results in an interaction with the emitted radiation, which in turn leads to additional heating of the facet. The relationship described above can lead to self-reinforcing effects that can ultimately destroy the laser (COD, catastrophic optical damage).

[0008] According to one embodiment, the radiation guide element is designed as a protective element which reduces such effects. In particular, it can be designed such that it enables operation of the semiconductor laser in normal ambient air. For this purpose, it can have a certain minimum thickness. However, it can also bridge the distance between the laser and a radiation output element as a coupling element, as will be explained in more detail later. Accordingly, the laser diode is preferably an edge-emitting laser diode. In this case, the radiation exit region is a region of the laser facet, i.e. the radiation guide element is arranged in the radiation exit region on the laser facet, preferably directly on the laser facet, and is monolithically connected to the laser facet.

[0009] As mentioned, it can in principle be any semiconductor laser diode, in particular a so-called Vertical Cavity Surface Emitting Laser (VCSEL) or a Photonic Crystal Surface Emitting Laser (PCSEL). In a VCSEL, the radiation guide element can be applied - preferably directly - to a distributed Bragg reflector, via which the laser radiation emerges during operation, or - preferably directly - to a substrate, via which the laser radiation emerges during operation. In a PCSEL, the radiation guide element can be applied - preferably directly - to a photonic crystal of the PCSEL.

[0010] The substance may, in particular, be an inorganic substance. The substance may comprise or consist of silicon, aluminum, tantalum, titanium, or hafnium.

[0011] For example, the material can be a dielectric, such as: silicon dioxide Si 02, aluminum oxide AI2O3, tantalum oxide TaO, tantalum dioxide Ta02, ditantalum pentaoxide Ta2O 5 f Titanium dioxide TiO2, hafnium dioxide HfO2. Particularly good experimental results were achieved with silicon dioxide SiO2.

[0012] The radiation guide element can be designed as a radiation decoupling element. This means that the radiation guide element has a radiation decoupling surface that is not connected to another optical element and via which the radiation can be emitted into the atmosphere.

[0013] The radiation coupling element can be designed to shape the laser radiation (hereinafter referred to as "optical element"), in particular it can be designed as a refractive lens.

[0014] The lens can be designed such that the laser radiation is expanded by the lens effect, enabling operation of the semiconductor laser in normal ambient air. Alternatively, the radiation output element can enable self-adjusting focusing of the laser beam to optimize the beam profile.

[0015] Alternatively, in addition to the radiation guide element, a radiation decoupling element may be present that is monolithically connected to the radiation guide element. The radiation guide element can then represent a coupling element (in particular a light guide) with which the laser radiation is guided from the laser diode to the radiation decoupling element. In this embodiment, too, the beam decoupling element can be configured to shape the laser radiation. The beam decoupling element can be any lens, in particular a refractive lens, or even a prism that changes the propagation direction of the laser radiation.

[0016] The radiation decoupling element can be arranged downstream of the radiation guide element along a beam path of a laser radiation generated by the semiconductor laser. This means that laser radiation generated when the laser diode is active is first transmitted through the radiation guide element and then through the radiation decoupling element.

[0017] The semiconductor laser may further comprise a carrier on or at which the semiconductor laser and, if applicable, the radiation-outcoupling element are arranged. In particular, the laser and, if applicable, the radiation-outcoupling element may be mounted thereon. According to one embodiment, the semiconductor laser has multiple laser diodes. Likewise, a single laser diode may have multiple emission points. For example, the semiconductor laser may comprise a VCSEL array or an edge emitter with multiple laser bars (laser bars).

[0018] If several laser diodes and / or laser diodes with several emission points are present, several of the radiation guiding elements described above are preferably also present; preferably, the semiconductor laser has as many radiation guiding elements as emission points.

[0019] The laser diode can be configured to emit light in the visible spectral range, particularly in the blue spectral range. The described semiconductor laser is preferably used in a head-up display of a motor vehicle or as a beam source in a laser projector.

[0020] In a method for producing the semiconductor laser described above, in step S1 a laser diode which has an active zone for generating laser radiation and a radiation exit region is provided and then in step S2 a radiation guiding element is applied to the laser diode in the radiation exit region. Step S2 comprises the sub-step of exposing (S2a) the laser diode to an atmosphere containing a precursor, e.g. an organometallic compound and optionally a nitrogen and / or oxygen supplier, which can be excited to a chemical reaction by the laser radiation. Step S2 additionally comprises the sub-step of operating S2b the laser diode such that the chemical reaction is excited and the precursor is converted into a substance which forms the radiation guiding element in the radiation exit region monolithically on the laser diode.The optional addition of oxygen prevents the deposition of carbon on the facet.

[0021] As discussed above, the laser diode can be an edge-emitting laser diode. In this case, the radiation exit region is a laser facet, and the radiation guide element is arranged on the laser facet, preferably directly. Furthermore, the laser diode can be a VCSEL or a PCSEL. The radiation guide element is preferably radiation-stable and preferably a protective element, and preferably enables operation of the semiconductor laser in normal ambient air.

[0022] The precursor may, in particular, be an inorganic precursor. Accordingly, the substance may be an inorganic substance. The precursor may comprise or consist of silicon, aluminum, tantalum, hafnium, or titanium. Accordingly, the substance may comprise or consist of silicon, aluminum, tantalum, hafnium, or titanium.

[0023] Particularly good experimental results were achieved with SiO2. In this case, a volatile silicon (Si x H y C z ), e.g.

[0024] Silane (Si x H 2x ) , used as a precursor . This reacts with oxygen O2 from the atmosphere to form silicon dioxide SiO2

[0025] Si x H y C z + O2_> SiO2+ H20 ( + stable Si x-o H y-m C z-n )

[0026] Here, the Si can be replaced by another metal with a suitable refractive index of the formed oxide.

[0027] As mentioned above, the radiation guide element can be designed as a radiation decoupling element, and it can be suitable for shaping the laser radiation. Alternatively, as mentioned above, in addition to the radiation guide element, a radiation decoupling element can be present that is monolithically connected to the radiation guide element.

[0028] A corresponding manufacturing process additionally comprises the step S 2aproviding the radiation outcoupling element and step S2b of arranging the radiation outcoupling element relative to the laser diode such that, during operation of the laser diode, the laser radiation is transmitted through the radiation outcoupling element. Accordingly, in step S2a, both the laser diode and the radiation outcoupling element are subsequently exposed to the atmosphere containing the precursor, and in step S2b, during operation of the laser diode, the radiation guide element is formed in the radiation exit region on the laser diode such that it monolithically connects the laser diode to the radiation guide element.

[0029] As mentioned above, the semiconductor laser can further comprise a carrier on or at which the semiconductor laser and, if applicable, the radiation output element are arranged. As mentioned above, the semiconductor laser can have a plurality of laser diodes, and a plurality of radiation guide elements can then be produced. The laser diode can be configured to emit light in the visible spectral range, in particular in the blue spectral range. The semiconductor laser described is preferably used in a head-up display of a motor vehicle as a beam source in a laser projector.

[0030] According to one embodiment, a radiation transmission element, in particular a radiation exit window for a laser housing, comprises a base element, in particular a radiation exit window base element, and one or more optical elements arranged on the base element and monolithically connected to the base element. The optical elements, in turn, comprise or consist of a material that can be applied to the base element by means of laser radiation.

[0031] The base element can in particular be a radiation exit window base element, preferably it can be a planar or predominantly planar disc that is transparent to the laser radiation.

[0032] Analogous to the semiconductor laser described above with

[0033] Radiation guiding element, the optical element(s) can be produced in a self-aligning manner on the base element by operating a laser diode to apply the optical element(s).

[0034] The optical element is designed to shape the laser radiation. It may be a refractive lens. The lens may be designed such that the laser radiation is expanded by the lens effect. The material may be one of the materials mentioned above, in particular silicon dioxide.

[0035] According to one embodiment, an optoelectronic device comprises one or more semiconductor laser diodes, each having an active zone for generating laser radiation, and a hermetic laser housing in which the semiconductor laser diodes are arranged. The previously described radiation exit window is a component of the hermetic laser housing. The laser diodes are arranged relative to the radiation exit window in such a way that each laser diode is assigned one of the optical elements through which the laser radiation of the respective laser diode can exit in an operating state.

[0036] The laser diodes can be laser diodes of one of the types mentioned above, e.g. edge-emitting laser diodes or a VCSEL array, and application in a head-up display or as a beam source in a laser projector is preferred.

[0037] In a method for producing a corresponding radiation transmission element, in particular a radiation exit window, the radiation transmission element is first provided in step S21. Subsequently, the optical element(s) is / are applied to the radiation transmission element in step S22. In this case, the radiation transmission element is first exposed to an atmosphere containing a precursor that can be excited to a chemical reaction by laser radiation (step S22a). Laser radiation is then generated so that the chemical reaction is excited by the laser radiation and the precursor is converted into a substance that forms the optical elements monolithically on the radiation transmission element (step S22b).

[0038] In a method for producing the optoelectronic device, at least one semiconductor laser diode is first provided (step S31) with an active zone for generating laser radiation. Furthermore, a hermetic laser housing with a radiation exit window base element is provided (step S32). The laser diode is then arranged in the laser housing (step S33) such that, in an operating state, the laser radiation from the laser diodes can exit via the radiation exit window base element.The application of the optical element(s) in step S34 to the radiation exit window base element is carried out by exposing the radiation exit window base element to an atmosphere with a precursor which can be excited to a chemical reaction by the laser radiation in step S34a and then operating the laser diode in step S345 so that the chemical reaction is excited and the precursor is converted into a substance which forms the at least one optical element monolithically on the radiation exit window base element.

[0039] Preferably, in step Ss4 a an interior of the laser housing kept free of the precursor .

[0040] The at least one laser diode can, in particular, be a laser diode of one of the previously described types. The material can be one of the previously described materials, in particular silicon dioxide, in which case the precursor can be a volatile silicone.

[0041] The invention is explained in more detail below in connection with the accompanying figures, which schematically show: Figure 1: a semiconductor laser according to a first embodiment,

[0042] Figure 2: a method for manufacturing the semiconductor laser according to the first embodiment,

[0043] Figure 3: a semiconductor laser according to a second embodiment,

[0044] Figure 4: a semiconductor laser according to a third embodiment,

[0045] Figure 5: a method for manufacturing the semiconductor laser according to the second and third embodiments,

[0046] Figure 6: a radiation exit window according to an embodiment,

[0047] Figure 7: a method for producing the radiation exit window according to the embodiment of Figure 6,

[0048] Figure 8: a hermetic laser housing according to an embodiment,

[0049] Figure 9: a method for manufacturing the hermetic laser housing according to the embodiment of Figure 8.

[0050] Figure 1 shows a semiconductor laser 1 according to a first embodiment. The semiconductor laser 1 comprises a semiconductor laser diode 2 arranged on a carrier 4. In the present embodiment, a mounting element (submount) 42 is located between the carrier 4 and the semiconductor laser diode 2. This mounting element is connected to the laser diode 2 and the carrier 4 by means of a solder 40 and 41 (in this case, a solder layer). The laser diode 2 has an active zone 20, which generates the laser radiation 5 when a suitable voltage is applied. The laser radiation 5 exits the laser diode 2 via the radiation exit region 22. In the present case, the laser diode 2 is an edge-emitting laser diode. Accordingly, the radiation exit region 22 is a region of the laser facet 21. A radiation guide element 3 is arranged on the laser facet 21 in the radiation exit region 22.Alternatively, the laser diode 2 could also be a VCSEL or a PCSEL. The radiation guide element 3 comprises or consists of a material that can be applied to the laser diode 2 by means of the laser radiation 5. The radiation guide element 3 enables operation of the semiconductor laser 1 in normal ambient air; it is therefore a protective element.

[0051] In this case, the radiation guide element 3 is also shaped as a refractive lens. The radiation guide element 3 is thus a radiation decoupling element 30 that has a radiation decoupling surface through which the laser radiation 5 can be emitted into the atmosphere.

[0052] As previously mentioned, the radiation guide element 3 comprises a material that can be applied to the laser diode 2 by means of the laser radiation 5. A corresponding method is described in more detail below in connection with Figure 2.

[0053] The method begins with step So Start . In step Si, the laser diode 2 is provided . Subsequently, in step So, the radiation guide element 3 is applied to the laser diode 2 . The step So comprises the substeps So a and Sob - In the step So a the laser diode 2 is exposed to an atmosphere containing a precursor that can be excited to a chemical reaction by laser radiation 5. In step 50b, the laser diode is operated so that the chemical reaction is excited and the precursor is converted into a substance that forms the radiation guide element 3 monolithically on the laser diode 2 in the radiation exit region 22. The precursor can be, in particular, a silicone hydride or volatile silicone, and the substance can be silicon dioxide. The method ends with step 5 EEnd. Any hydrocarbons present are oxidized to COo by reaction with oxygen and are no longer available as a reactant in the process. Figure 3 shows a semiconductor laser 1 according to a second exemplary embodiment. This is essentially constructed analogously to the first exemplary embodiment according to Figure 1. However, in the semiconductor laser 1 according to the second exemplary embodiment, the radiation guide element 3 is not a radiation output element 30. This means that the electromagnetic radiation is not emitted directly into an atmosphere via the radiation guide element 3. Rather, the radiation guide element 3 is connected to a radiation exit element 6. It guides the laser radiation 5 generated in the laser diode 2 as a light guide to the radiation exit element 6.The radiation exit element 6 is a prism 60 that deflects the laser radiation 5 (in the present example at a right angle, i.e., by approximately 90°). Like the semiconductor laser diode 2, this prism is arranged on the carrier 4 with a solder 41.

[0054] The laser radiation 5 emerges at the top of the prism 60, deflected by 90°. Such an arrangement can be used in particular as a so-called top-looker laser housing, i.e. as a semiconductor laser housing in which the laser radiation 5 emerges at the top perpendicular to a base area of ​​the housing. The housing can be arranged and contacted with the base area on a carrier, e.g. a printed circuit board. The semiconductor laser 1 is arranged on a mounting surface which runs parallel to the base area and emits the laser radiation 5 parallel to the base area (perpendicular to the surface normal of the base area).

[0055] In the present exemplary embodiment, the space between the prism 60 and the semiconductor laser diode 2 or the mounting element 42 is additionally filled with a filler material 7 in order to protect the space from contamination, to seal it, and to mechanically stabilize it. Figure 4 shows a semiconductor laser 1 according to a third exemplary embodiment. This is constructed similarly to that of the second exemplary embodiment; in particular, the radiation guide element 3 is monolithically connected to the semiconductor laser diode 2 and the radiation output element 6 and serves as a light guide between these elements. However, the radiation output element 6 is not a prism 60, but a lens 61 (in this case a refractive lens).

[0056] All of the previously described embodiments have in common that the laser radiation 5, when coupled into an atmosphere via one of the radiation coupling elements 30, 6, is expanded in such a way that operation of the optoelectronic device in normal ambient air (e.g. Earth's atmosphere at 300 Kelvin) is possible.

[0057] A method for producing the semiconductor laser 1 according to the second and third embodiments is shown in Figure 5. The method begins with step S0 Start. First, in step S1, the semiconductor laser diode 2 is provided. Then, in step S1 athe radiation output element 6 is provided. Subsequently, in step 51b, the radiation output element 6 is arranged relative to the laser diode 2 such that, during operation of the laser diode 2, the laser radiation 5 is transmitted through the radiation output element 6. In the present case, both the laser diode 2 and the radiation output element 6 are arranged on a carrier 4 by means of solder 40, 41 and, if appropriate, a mounting element 42.

[0058] Subsequently, in step So, the radiation guiding element 3 is applied to the laser diode 2 in such a way that it monolithically connects the laser diode 2 to the radiation coupling element 6. The step So comprises the substeps So a and Sob - In the step So aBoth the laser diode 2 and the radiation exit element 6 are exposed to the atmosphere with the precursor. The distance between the radiation exit element 6 and the laser diode 2 was chosen to be so small in step S1b that in step S2b of operating the laser diode 2, the radiation guide element 3 is formed in the radiation exit region 22 on the laser diode 2 and connects the laser diode 2 monolithically to the radiation guide element 3. The method ends with step S E End .

[0059] Figure 6 shows a radiation transmission element 8 designed as a radiation exit window 8a according to one exemplary embodiment. The radiation exit window 8a comprises a base element 80 designed as a radiation exit window base element 80a. The radiation exit window base element 80a can be a flat or disk-shaped element that is transparent to laser radiation 5, e.g. a glass pane. A plurality of optical elements 31 that are monolithically connected to the radiation exit window base element 80a are arranged on the radiation exit window base element 80a. These are refractive lenses. These consist of a material that can be applied to the radiation exit window base element 80a by means of laser radiation 5.

[0060] As a result, the radiation exit window 8a of Figure 6 can be produced particularly easily by means of the manufacturing method illustrated in Figure 7. In step S21, the radiation exit window base element 80a is first provided. Subsequently, in step S22, the optical elements are applied thereto. This application takes place by exposing the radiation exit window base element 80a to an atmosphere containing a precursor 5, which can be excited to a chemical reaction by the laser radiation, in step S22a, and then generating laser radiation 5 in step S22b, so that the precursor is converted into a substance that forms the optical elements 31 on the radiation exit window base element 80a. The method ends with step S EEnd. Preferably, only one side of the radiation exit window base element 80a is exposed to the precursor, so that the optical elements 31 are formed only on one side of the radiation exit window base element 80a. For example, it can be filled with a protective gas.

[0061] Figure 8 shows an optoelectronic device 10 with a hermetic laser housing 9 with the radiation exit window 8a described above. Semiconductor laser diodes 2 are arranged on a carrier 4 in the hermetic laser housing 9. A prism 90 is also located in the laser housing. As a result, the electromagnetic radiation 5 emitted by the semiconductor laser diode 2 is deflected by 90 degrees and emitted through the radiation exit window 8a. The laser diodes 2 are arranged relative to the radiation exit window 8a in such a way that each of the laser diodes 2 is assigned one of the optical elements 31 in such a way that the laser radiation emitted by the laser diode 2 in an operating state exits through the assigned optical element 31.

[0062] According to an alternative embodiment, the radiation exit window 8a according to Figure 6 and the optoelectronic device 10 according to Figure 8 can also contain only one optical element 31 and only one semiconductor laser diode 2. Likewise, the laser radiation 5 of a corresponding semiconductor laser diode 2 can also be split into several laser beams by means of a beam splitter, and / or the laser diode can have several emission points. Then, several of the optical elements 31 through which the laser radiation 5 exits can be assigned to a laser diode 2.

[0063] To manufacture the optoelectronic device 10, a corresponding radiation exit window 8a with the optical elements 31 can in principle be provided and placed on the laser housing 9, in which the laser diode 2 and the mounting element 4 and the prism 90 are already located, and aligned such that the laser radiation 5 exits through the optical elements 31.

[0064] Preferably, however, the optoelectronic device 10 is manufactured according to the method illustrated in Figure 9. The method begins with step S0 Start. Then, in step S31, the laser diodes are provided. Then, in step S32, the hermetic laser housing 9 with the radiation exit window base element 80a is provided. In the subsequent step S33, the laser diodes are arranged in the laser housing 9 such that, in an operating state, the laser radiation 5 of the laser diodes 2 can exit via the radiation exit window base element.

[0065] In the subsequent method step S34, the optical elements 31 are applied to the radiation exit window base element 80a. The step S34 comprises the sub-steps S 34 a and S 34 b . In the sub-step S 34 aThe radiation exit window base element 80a is exposed to an atmosphere containing a precursor that can be excited to a chemical reaction by the laser radiation 5, and in sub-step Ss4b, the laser diodes 2 are finally operated so that the chemical reaction is excited and the precursor is converted into a substance that monolithically forms the optical elements 31 on the radiation exit window base element 80a. The method ends with step S E End .

[0066] The method has been described in connection with several laser diodes 2, but a single laser diode 2 can also be used, in which case - depending on the number of emission points - only one optical element 31 may be produced.

[0067] In principle, the described methods can be used to produce all radiation guidance elements 3, in particular optical elements 31, that can be realized with the aid of beam shaping of the triggering laser radiation 5. Preferably, the interior 91 of the hermetic laser housing 9 is kept free of the precursor so that no optical elements are formed there.

[0068] In all of the described methods, the radiation exit window base element 80a or the laser diode 2 can be exposed to the precursor using a reaction chamber. In all embodiments, the precursor can be one of the precursors described above, and the substance can be one of the substances described above.

[0069] This application claims priority from DE 10 2022 201 340 . 9. The priority document is incorporated in its entirety by reference into the present disclosure.

[0070] Reference symbol list:

[0071] 1 semiconductor laser

[0072] 10 optoelectronic device

[0073] 2 semiconductor laser diodes

[0074] 20 active zones

[0075] 21 laser facets

[0076] 22 Radiation exit area

[0077] 3 Radiation guide element

[0078] 30 radiation decoupling element

[0079] 31 optical element

[0080] 4 carriers

[0081] 40 lots

[0082] 41 lots

[0083] 42 Mounting element

[0084] 5 Laser radiation

[0085] 6 Radiation coupling element

[0086] 60 Prism

[0087] 61 lens

[0088] 8 Radiation transmission element

[0089] 8a Radiation exit window

[0090] 80 basic element

[0091] 80a radiation exit window base element

[0092] 9 hermetic laser housing

[0093] 90 Prism

[0094] 91 Interior

Claims

Patent claims 1. Semiconductor laser (1) comprising: a semiconductor laser diode (2) having an active zone (20) for generating laser radiation (5) and a radiation exit region (22) through which the laser radiation can exit the laser diode (2), and a radiation guide element (3) arranged in the radiation exit region (22) on the laser diode (2) and monolithically connected to the laser diode (2), wherein the radiation guide element (3) comprises or consists of a material which can be applied to the laser diode (2) by means of the laser radiation (5), further comprising a radiation extraction element (6) wherein the radiation extraction element (6) is monolithically connected to the radiation guide element (3).

2. Semiconductor laser (1) according to claim 1, wherein the laser diode (2) is an edge-emitting laser diode and the radiation output region (22) is a region of the laser facet (21), wherein the radiation guidance element (3) in the radiation output region (22) is arranged directly on the laser facet (21) and is monolithically connected to the laser facet (21).

3. Semiconductor laser according to claim 1 or 2 wherein the radiation guidance element (3) is designed such that it enables the operation of the semiconductor laser (1) in normal ambient air.

4. Semiconductor laser according to one of the preceding claims, wherein the radiation extraction element (6) is arranged downstream of the radiation guiding element (3) along a beam path of a laser radiation (5) that can be generated with the semiconductor laser.

5. Semiconductor laser according to any of the preceding claims, wherein the material comprises silicon, aluminium, tantalum, hafnium or titanium.

6. Method for manufacturing a semiconductor laser (1) , comprising the steps: Providing (Si) a semiconductor laser diode (2) which has an active zone (20) for generating laser radiation (5) and a radiation exit region (22) through which the laser radiation can exit the laser diode (2), providing (Si a ) of a radiation extraction element (6) , Arranging (Sib) the radiation coupling element (6) relative to the laser diode (2) such that, during operation of the laser diode (2), the laser radiation (5) is transmitted through the radiation coupling element (6), Applying (S2) a radiation guidance element (3) to the laser diode (2) in the radiation output area (22) , wherein the application step comprises: Exit (S 2a) both the laser diode (2) and the radiation extraction element (6) of an atmosphere with a precursor that can be excited to a chemical reaction by the laser radiation (5), Operating (S2b) the laser diode (2) , so that the chemical reaction is stimulated and the precursor is converted into a substance which forms the radiation guidance element (3) monolithically on the laser diode (2) in the radiation output region (22) in such a way that it monolithically connects the laser diode (2) with the radiation output coupling element (6 .

7. The method of claim 6, wherein the precursor and the material comprise silicon, aluminium, tantalum, hafnium or titanium.

8. Method according to claim 6 or 7, wherein a semiconductor laser (1) according to one of claims 1 to 4 is generated.

9. Optoelectronic device (10) comprising: one or more semiconductor laser diodes (2), each having an active zone (20) for generating laser radiation, a hermetic laser housing (9) in which the semiconductor laser diodes (2) are arranged, with a radiation exit window (8a), the radiation exit window comprising: a radiation exit window base element (80a), and one or more optical elements (31) arranged on the radiation exit window base element (80a) and monolithically connected to the radiation exit window base element (80a), wherein the optical elements (31) comprise or consist of a material that can be applied to the radiation exit window base element (80a) by means of laser radiation, wherein the laser diodes (2) are arranged relative to the radiation transmission element (8) such that each laser diode (2) is associated with one or more of the optical elements (31). are,through which the laser radiation of the respective laser diode (2) can escape in an operating state.

10. Optoelectronic device according to claim 9, wherein the material comprises silicon, aluminium, tantalum, hafnium or titanium.

11. Method for manufacturing an optoelectronic device (10) , comprising the steps: Providing (S31) one or more semiconductor laser diodes (2) having an active zone (20) for generating laser radiation, providing (S32) a hermetic laser housing (9) with a radiation exit window base element (80a), arranging (S33) the laser diodes (2) in the laser housing (9) such that in an operating state the laser- Radiation (5) from the laser diodes (2) can exit via the radiation exit window base element (80a), Applying (S34) one or more optical elements (31) to the radiation exit window base element (80a), wherein the application step comprises: Exit (S 34a ) of the radiation exit window base element (80) of an atmosphere with a precursor that can be excited to a chemical reaction by the laser radiation (5), Operate (S 34 b) the laser diodes (2) , so that the chemical reaction is stimulated and the precursor is converted into a substance which forms the optical elements (31) monolithically on the radiation exit window base element (80a .

12. The method of claim 11, wherein the precursor and the material comprise silicon, aluminium, tantalum, hafnium or titanium.

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