Vacuum substrate holder with optimised vacuum seal

Abstract

The invention relates to a vacuum substrate holder (1) for fixing a substrate (13), comprising a) a first vacuum zone (5, 5', 5", 5"') with at least one first fixing element (4, 4', 4", 4"'), b) a second vacuum zone (5, 5', 5", 5"') with at least one second fixing element (4, 4', 4", 4"'), c) receiving elevations (9) arranged at least in the first vacuum zone (5, 5', 5", 5"') and at least in the second vacuum zone (5, 5', 5", 5"`), wherein the substrate (13) is arranged in a fixed state on a receiving surface provided by the receiving elevations (9), and d) at least one transition zone (6, 6', 6", 6"', 6IV, 6V) separating the first vacuum zone (5, 5', 5", 5"') and the second vacuum zone (5, 5', 5", 5"') from one another, wherein the transition zone (6, 6', 6", 6"', 6IV, 6V) has at least one sealing structure (10, 10', 10", 10"', 10IV, 10V).

Description

[0001] EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO Description Vacuum substrate holder with optimized vacuum seal The invention relates to a vacuum substrate holder with optimized vacuum seal as well as a device for bonding and a method for bonding substrates. This is a solution for multi-zone substrate holding devices for fusion and hybrid bonding. In recent years, substrate holding devices on bonding systems for fusion and hybrid bonding have become established, which have more than one defined vacuum zone for substrate fixation. These vacuum zones are preferably subjected to different vacuum pressures, which results in a different strength of contact pressure of the substrate on the holding device. Since the holding force or contact pressure of the substrate on the holding device influences the course of the bonding wave and in particular on theSince the (mechanical) stress introduced into the interface is too high, the bonding result, in particular the distortion of the substrates, can be actively influenced by targeted control of the vacuum pressure for the individual zones. Particular reference is made to the possibility of vacuum zones from WO2017 / 162272A1. Abrupt transitions from one vacuum zone to another lead to a locally abrupt change in the boundary conditions for the bonding wave, resulting in a locally abrupt change in the voltage and thus distortion in the bonded wafer pair. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 2 - In the prior art, two are separated with a vacuum seal. One solution to this problem would be to divide vacuum transitions into several zones and define gradations so that the vacuum transitions are not so abrupt. However, this leads to a significant increase in the complexity of the sample holder and the associated control with pneumatics and electronics, which on the one hand is economicallyis not very desirable, but on the other hand is also mechanically difficult or even impossible to realize, since the installation space is limited and the drilling of the numerous feeds in the substrate holder is not possible or only possible with difficulty. These difficulties are particularly exacerbated in the production of substrate holders made of ceramics such as silicon nitride or silicon carbide (SiSiC ceramics). For several years now, substrates in the semiconductor industry have been joined together using so-called bonding processes. Before the connection, these substrates must be aligned to each other as precisely as possible. One of the greatest challenges in bonding lies in the bonding process itself, i.e. during the bond initiation until the contact surfaces of the substrates are fully contacted. During this time, the alignment of the two substrates to each other can change significantly compared to the previous alignment. Although the substrates areWhile alignment systems can be aligned very precisely to each other, substrate distortions can occur during the bonding process itself. Alignment inaccuracies at a specific point on the substrate can be the result of distortion, a scaling error, a lens error (magnification or reduction error), etc. Abrupt changes, in particular, should be avoided, as abrupt distortions resulting from the bonding process are difficult to compensate for with compensation options, for example, from post-bond lithography. Gradual distortions, on the other hand, can be more easily compensated and at least minimized. The finer the structures to be imaged, the more the semiconductor components produced depend on errors, particularly distortions, of the components used. Several methods and systems exist in the state of the art that attempt tocan influence the bonding process, as for example in EP2656378B1 or WO2014 / 191033A1. The object of the present invention is to provide a device and a method for bonding two substrates, with which the bonding accuracy is increased and a reduction in the distortions induced by bonding is achieved, since abrupt changes in the framework conditions for the bonding wave are avoided. It is therefore the object of the invention to at least partially eliminate, in particular to completely eliminate, the disadvantages listed in the prior art. In particular, it is an object of the invention to provide an improved vacuum substrate holder as well as an improved device and method for bonding. Furthermore, it is the object of the present invention to provide a vacuum substrate holder with which the bonding accuracy is increased and a reduction in the distortions induced by bonding is achieved. The present object is achieved with theFeatures of the independent claims. Advantageous developments of the invention are specified in the subclaims. The scope of the invention also includes all combinations of at least two features specified in the description, in the claims and / or the drawings. For specified value ranges, values ​​lying within the stated limits should also be considered as disclosed limits and can be claimed in any combination. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 4 - Accordingly, the invention relates to a device for fixing a substrate, at least comprising a first vacuum zone with at least one first fixing element, a second vacuum zone with at least one second fixing element, receiving elevations which are arranged at least in the first vacuum zone and at least in the second vacuum zone, wherein the substrate is arranged in a fixed state on a receiving surface provided by the receiving elevations and at leasta transition zone separating the first vacuum zone and the second vacuum zone from one another, wherein the transition zone has at least one sealing structure, wherein in the fixed state the first vacuum zone and the second vacuum zone are fluidically connected to one another by the transition zone. In other words, a vacuum substrate holder is provided which provides a receiving surface for a substrate or a substrate stack, with which a gradual vacuum transition between adjacent vacuum zones can be achieved by a specifically adjusted fluidic connection in a transition zone. The second zone can also be formed by the environment of the vacuum substrate holder, so that a correspondingly advantageous pressure equalization is created at the periphery. The receiving elevations are in particular knob-like projections of the same height, which are arranged on the entire vacuum substrate holder, preferably regularly and in each zoneare arranged. The vacuum zones, or the first and second vacuum zones, are separated from one another by a transition zone. The transition zone is characterized in particular by the fact that at least one sealing structure is arranged within it, which separates the individual vacuum zones from one another, wherein, in the present case, contrary to the prior art, a fluidic connection between the vacuum zones is provided by the transition zone. When the substrate rests on the receiving elevations or is fixed to the receiving surface, the vacuum zones are only fluidically connected via the transition zone. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 5 - transition zone, the substrate, the substrate holder, and the transition zone of the substrate holder form a vacuum zone. The transition zone is dimensioned such that fixation by the fixing elements is still possible. Thus, a gradual vacuum transition between the vacuum zones can advantageously be ensured without theThe at least one fixing element is in particular one or more vacuum openings which are connected to a correspondingly regulated vacuum control unit. The at least one fixing element or fixing elements can advantageously be used to fix the substrate to the respective vacuum zone. The sealing structure can, for example, be a sealing ring and is formed along the entire transition zone. As is usual for vacuum substrate holders, a radially symmetrical arrangement of the elements is preferred, with the transition zones also preferably being circular in shape. The transition zone can advantageously prevent abrupt changes in the vacuum values. In addition, a better bonding result can be achieved with the vacuum substrate holder. In a preferred embodiment of the vacuum substrate holder, it is provided that the at least one sealing structure has at leasthas an opening and through which at least one opening a flow cross-sectional area of ​​the sealing structure can be predetermined. The sealing structure thus has a desired opening or desired openings in order to provide a specific flow cross-sectional area through the transition zone and thus from the first vacuum zone to the second vacuum zone. By dimensioning the opening, the flow behavior can be advantageously adjusted and thus a gradual compensation can be achieved. The flow cross-sectional area of ​​the sealing structure preferably also represents the flow cross-sectional area of ​​the transition zone. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 6 - In a preferred embodiment of the vacuum substrate holder, it is provided that the at least one transition zone has at least two sealing structures each and the transition zone between the sealing structures of the at least one transition zone that are furthest apart from one another has aForms an intermediate space. In this particularly preferred embodiment, the transition zone has at least two sealing structures, preferably directly adjacent to the respective vacuum zone. In this way, a separation of the respective adjacent vacuum zones is advantageously possible along the entire extent in the radial direction of the transition zone. In addition, an intermediate space is advantageously provided in which a gradual pressure equalization between the first vacuum zone and the second vacuum zone can take place without generating bonding errors due to abrupt changes during the vacuum transition. The intermediate space can have further sealing structures between the two most spaced sealing structures. This further enhances the positive effect on the bonding result, since the vacuum transition can take place even more gradually. The sealing structures of the same transition zone preferably have the same distance from one another.In a preferred embodiment of the vacuum substrate holder, it is provided that the respective flow cross-sectional area of ​​the two sealing structures furthest apart from each other is of equal size. In this way, a particularly gradual vacuum transition is possible, since the respective openings or flow cross-sectional areas of the respective outer sealing structures of a transition zone are of equal dimensions. In addition, the compensation can be carried out evenly in the direction of the first vacuum zone and the second vacuum zone. Preferably, all sealing structures of a transition zone have the same EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 7 - flow cross-sectional area. Uniform compensation is advantageously ensured. Thus, the respective flow cross-sectional areas of all sealing structures of the at least one transition zone are of equal size or dimension. In a preferred embodiment of theVacuum substrate holder, it is provided that the flow cross-sectional area of ​​the intermediate space is larger than the flow cross-sectional area of ​​the sealing structures of a transition zone. In other words, the intermediate space forms a buffer, since compensation only occurs via the respective openings in the sealing structures, whereas within a transition zone at least one flow cross-sectional area is provided, which is larger than that of the outer sealing structures. If more than two sealing structures or further sealing structures are arranged between the outer sealing structures, the flow cross-sectional area of ​​the intermediate space is determined at locations without a sealing structure. The volume provided by the intermediate space between the outer sealing structures thus advantageously provides a space for compensating the vacuum. The volume as well as the flow cross-sectional area of ​​theThe gap can advantageously be adapted by filling the gap with a material. In a preferred embodiment of the vacuum substrate holder, it is provided that the flow cross-sectional area of ​​the gap is a factor of 5 larger, preferably a factor of 10 larger, preferably a factor of 30 larger, more preferably a factor of 50 larger, even more preferably a factor of 100 larger, most preferably a factor of 200 larger, most preferably more than a factor of 200 larger than the flow cross-sectional area of ​​the sealing structures of a transition zone. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 8 - In other words, the opening of the sealing structures is significantly smaller than the cross-section of the gap. In a preferred embodiment of the vacuum substrate holder, it is provided that the at least one sealing structure has a uniform height relative to a vacuum substrate holder surface and the height of the at least oneSealing structure is less than a height (H) of the receiving elevations relative to the vacuum substrate holder surface, so that in the fixed state, a gap with a gap height (h) is formed between the at least one sealing structure and the substrate. In other words, the height of the sealing structures of a transition zone is the same along the transition zone. The gap between the substrate and the sealing structure is thus also the same. Thus, the sealing structure is recessed compared to the receiving surface provided by the receiving elevations. Thus, a sealing ring is predestined for this embodiment. The vacuum seals can be recessed, for example, between 100 nm and 5 µm, preferably between 100 nm and 3 µm, even more preferably between 100 nm and 500 nm. In comparison, the height of the knobs H1, which define a height of the support surface of the substrates, is, for example, between 100 µm and 1000 µm. In thisIn this way, a gap of the same size is provided along the entire transition zone, so that a particularly uniform vacuum transition is ensured, whereby the aforementioned area has proven to be particularly suitable for the application. In a preferred embodiment of the vacuum substrate holder, it is provided that the gap height is more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, even more preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than a height of the receiving elevations. The height of the receiving elevation is also determined by the EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 9 - . In the fixed state of the substrate, this corresponds in particular to the distance between the substrate and the vacuum substrate holder surface. The gap thus also specifies the flow cross-sectional area of ​​the respectively adjacent sealing structure. It hasIt has been found that the above-mentioned size ratios are particularly suitable for a gradual vacuum transition and thus a very good bonding result can be achieved. The absolute height of the receiving elevations is less than 2000 µm, in particular less than 1000 µm, preferably less than 500 µm, more preferably less than 200 µm, most preferably less than 100 µm. In a preferred embodiment of the vacuum substrate holder, it is provided that linear projections are arranged with a uniform axial spacing on the at least one sealing structure along the transition zone. The linear projections preferably extend along the entire transition zone on the sealing structures. The linear projections are taken into account when determining the height of the sealing structures. The linear projections allow the compensation to be even more uniform. In this case, preferably more than two, even moremore preferably, more than three linear projections are arranged at a constant distance from one another on a sealing structure. In one embodiment, the transition zone can be provided by a wide sealing structure having a plurality of linear projections. In this embodiment, the transition zone preferably has only one sealing structure. In a preferred embodiment of the vacuum substrate holder, it is provided that the at least one sealing structure, in the fixed state, rests at least partially against the substrate and channels are formed in the at least one sealing structure offset along the transition zone. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 10 - The sealing structure, the sealing structures of a transition zone, are thus not set back and contact the substrate. The channels, like the gaps, are also openings and can be designed as desired. The channels preferably have a round orrectangular cross-section. In this case, the channels form the flow cross-sectional area. Particularly preferably, several and particularly preferably all sealing structures of a transition zone have channels. The channels are preferably arranged on the surface of the sealing structure or structures facing the substrate. Thus, the substrate does not lie on the sealing structure in the region of the channels. Particularly preferably, all sealing structures of a transition zone have channels which are preferably arranged regularly offset along the transition zone or along the radius, so that the flow path is increased. In this way, particularly gradual vacuum transitions and particularly distortion-free bonding results can be achieved. In a preferred embodiment of the vacuum substrate holder, it is provided that a distance between the at least one first vacuum zone and the at least one secondVacuum zone is less than 50 mm, preferably less than 25 mm, even more preferably less than 20 mm, most preferably less than 15 mm, most preferably less than 10 mm. In other words, the transition zone is dimensioned accordingly. In a circular vacuum substrate holder, the distances are dimensioned radially, and the transition zones, which are particularly designed as circular arcs, have a radial extension corresponding to the aforementioned values. Due to the specific distance between the radially adjacent vacuum zones, a gradual transition can advantageously be achieved with conventional substrate holder diameters. In addition, the flow cross-sectional area of ​​the intermediate space can be provided over a certain range along the radial extension, so that a minimum or the intermediate space can be provided. It has been found that the distance between the vacuum zones is particularly suitableto achieve a gradual vacuum transition. In a preferred embodiment of the vacuum substrate holder, it is provided that the at least one fixing element of a vacuum zone has at least one fluid opening, and wherein a total flow area of ​​the respective vacuum zone is formed by all fluid openings of the respective vacuum zone together, and wherein the flow cross-sectional area of ​​the sealing structure of the transition zone adjacent to the respective vacuum zone is a factor of 2 smaller, preferably a factor of 5 smaller, more preferably a factor of 10 smaller, even more preferably a factor of 30 smaller, most preferably a factor of 50 smaller, most preferably a factor of 100 smaller than the total flow area of ​​the fixing elements of the respective adjacent vacuum zone. The fixing elements have one or more fluid openings to flood or evacuate the respective vacuum zone. The total flow area is determined by theThe total area of ​​all fluid openings of the fixing elements of a vacuum zone is specified. In other words, the flow cross-sectional area of ​​the supply line of a transition zone is significantly larger than the flow cross-sectional area of ​​the sealing structure of the adjacent transition zone(s). In this way, the gradual vacuum transition can be advantageously adjusted in relation to the parameters of the fixing elements. In a preferred embodiment of the vacuum substrate holder, the flow cross-sectional area of ​​the sealing structure is more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, even more preferably more than 80 times smaller, most preferably more than 100 times, most preferably more than 200 times smaller than a total opening area between the receiving elevations of a vacuum zone directly adjacent to the transition zone.The total opening area is preferably determined perpendicular to the substrate in the fixed state. The total opening area of ​​the vacuum zone toward the transition zone is determined by the free areas between the receiving protrusions. In other words, the smallest area between the nubs of the respective vacuum zone adjacent to the transition zone, i.e., the flow path of the fluid toward the transition zones, forms the total opening area. In this way, a particularly gentle and distortion-free bonding process can be carried out with the vacuum substrate holder. In a preferred embodiment of the vacuum substrate holder, it is provided that the vacuum substrate holder has further vacuum zones, wherein the further vacuum zones are each separated by further transition zones, and wherein radially adjacent vacuum zones are each fluidly connected to one another by the further transition zones. In other words, several vacuum zones can be connected in series.or are fluidically connected to one another. The transition zones are preferably arranged in the direction of the expected direction of movement of a bonding wave. The radially adjacent vacuum zones are each separated by a transition zone. In this embodiment, the further features are technically applicable in an analogous manner and have the same, in particular further enhanced, advantages. Furthermore, the invention relates to a device for bonding substrates comprising at least the vacuum substrate holder. The vacuum substrate holder is predestined for use in a bonding device. The lower substrate holder in particular is designed as the vacuum substrate holder EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 13 - and provides a vacuum transition between the respective vacuum zones. The bonding accuracy is thereby significantly improved. Furthermore, the invention relates to a method for bonding substrates with thefollowing steps, in particular in the following order: i) providing a first substrate on the vacuum substrate holder, ii) providing a second substrate on a substrate holder, and iii) bonding the first substrate to the second substrate. In particular, during the bonding in step iii), pressure differences occurring in the respective vacuum zones of the vacuum substrate holder, in particular along a progressive bonding wave between the first substrate and the second substrate, are compensated by the at least one transition zone. A particularly important aspect of the present invention is that a gradual vacuum transition from one vacuum zone to the next is enabled in the region of the receiving surface of the receiving device or the vacuum substrate holder. This enables a reduction in bonding-induced distortion, since abrupt changes in the framework conditions for the bonding wavecan be avoided. Through targeted structuring or the transition zone, a gradual vacuum transition between two vacuum zones can be achieved. By introducing transition zones that have a larger flow cross-section in the transition zone compared to the flow cross-section in the vacuum seal area, a gradual vacuum transition from one vacuum zone to the other is enabled. The transition zones are particularly preferably not actively supplied with vacuum and do not have any fixing elements. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 14 - The vacuum substrate holder controlled, gradual vacuum transition from one vacuum zone to the next. A transition zone between two vacuum zones enables the gradual vacuum transition from a first to a second vacuum zone. Changes in substrate fixation from one vacuum zone to the other are achieved through the generated gradual vacuum transition with the possibility of design optimization.implemented, whereby the boundary conditions for the bonding wave also change gradually. This reduces and evens out distortions, leading to increased quality of the bonded products. Both substrates are fixed by the holding devices during bonding, in particular during the travel of the bonding wave, preferably during fusion and hybrid bonding. An important aspect is that the substrates to be bonded are fixed on holding devices with multiple vacuum zones, which, with the help of transition zones, enable a gradual vacuum transition from one vacuum zone to the next in the holding surface of the holding device. This enables a reduction of bonding-induced distortions, since abrupt changes in the boundary conditions for the bonding wave are avoided by the uniform fixation. In a preferred embodiment, at least one of the two substrates is curved before contacting or bonding, and theThe curvature of at least one of the two substrates is changed during bonding, in particular during the travel of a bonding wave, by controlling the curvature. A change in curvature refers in particular to a state that deviates from the initial state of the substrates. The curvature of at least one of the substrates is described in detail in WO2017 / 162272A1. Its precise description is therefore omitted here. In this case, the bonding is controlled, in particular after contacting of the contact surfaces, in particular by controlled control of the fixing of the substrates. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 15 - Between vacuum zones, there is a transition zone without fixing elements, which is not actively supplied with vacuum. A further aspect of the present invention lies in the use of fixing elements, in particular individually switchable fixing elements, with the aid of which a progressing bonding wave between the contact surfaces can be controlled orcan be controlled. A characteristic process in bonding, especially permanent bonding, preferably fusion bonding, is the most centric and / or point-like contacting of the two contact surfaces of the substrates. In general, the contacting of the two substrates can also be non-centric. By designing the fixation of both substrates together with a control, regulation, or regulation of the curvature and / or detachment of at least one of the two substrates, the advancing bond wave is controlled such that an optimal, sequential contacting of the two substrates along the contact surfaces, in particular from the inside to the outside, occurs. Optimal contacting is understood in particular to mean that local alignment errors ("run-out" errors) at every point of the contact interface between the two substrates are minimal or, in the best case, even disappear. The various run-out errors are described in detail.described and referenced in WO2014 / 191033A1. The invention thus relates in particular to a method and a system with the aid of which it is possible to bond two substrates together in such a way that distortions, in particular distortions induced by bonding, are minimized because abrupt changes in the framework conditions for the bonding wave are avoided. In this case, the substrates are fixed by several fixing elements, in particular divided into vacuum zones. Thus, a gradual vacuum transition from one EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 16 - vacuum zone to the next in the receiving device is enabled by transition zones. The transition zones are not supplied with vacuum and serve as an intermediate space between two different vacuum zones. The vacuum is established in the intermediate spaces or transition zones through leakage at the vacuum seals. The transition zone functions to equalize, since differentLeakage rates at different locations along the vacuum seals are compensated via the seals and / or structures in the transition zone. By equalizing the substrate fixation from one vacuum zone to the other through the gradual vacuum transition created, the framework conditions for the bonding wave will also change gradually. This reduces and evens out distortions, leading to increased quality of the bonded products. After the centers of both substrates have been contacted, the fixation means of the holding devices are controlled in particular in such a way that a controlled deformation / change in curvature of at least one of the substrates occurs. An upper substrate is pulled downwards in a controlled manner, on the one hand by gravity and on the other hand by a bonding force acting along the bonding wave and between the substrates. The upper substrate is thus connected radially to the lower substrate from the center to the side edge.This results in the formation of a radially symmetrical bonding wave, which runs particularly from the center to the side edge. It is also conceivable that the upper substrate is held fixed during the entire period in which the bonding wave is running, and that the progression of the bonding wave can be promoted by successively switching off the fixing elements, particularly starting with the fixing elements inside the substrate holder. The progression of the bonding wave can also be promoted in particular by the two substrate holders moving closer together as the bonding wave progresses. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 17 - According to one embodiment of the invention, the fixing elements are either attached vacuum holes, one or more circular vacuum lips, or comparable vacuum elements, with the aid of which the wafer or substrate can be fixed. A pin in the central bore or a line,from which an overpressure can be generated by an introduced gas between the substrate holder and the substrate, serve for the controllable deflection of the fixed substrate (curvature means and / or curvature-changing means). The substrates can have any shape, but are preferably circular. The diameter of the substrates is, in particular, industrially standardized. For wafers, the industry-standard diameters are 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, and 18 inches. However, individual embodiments can fundamentally handle any substrate, regardless of its diameter. The bonding device or bonding device has two holding devices, one for the upper substrate and one for the lower substrate. The two holding devices are generally not completely identical, since at least one of the holding devices has one or more deformation elements to be able to deform one of the substrates.Holding devices for the upper and lower substrates have fixing means, in particular several fixing elements. The fixing elements can be grouped into vacuum zones. All fixing elements of a vacuum zone can be switched simultaneously. Preferably, all fixing elements of a vacuum zone can be controlled by a single control element, in particular a control valve. In a less preferred embodiment, all fixing elements in a zone can be switched individually. Thus, several fixing elements can be controlled simultaneously for fixing or releasing the substrate within the zone. Although they can be controlled individually, they generate very individual deformation properties of the substrate in their vacuum zone. The zones, or vacuum zones, are dimensioned in particular as is usual for zone vacuum substrate holders and can, for example, have the following geometries:assume: single-surface, circular segment, tiled, in particular as a triangle, square or hexagon. The fixations are in particular electronically controllable. The fixing property of the holding surface of the receiving device is controlled by the number of fixing elements per unit area as well as the respective set pressure. Vacuum fixation is the preferred type of fixation. The fixing elements can be subjected to negative pressure for fixation. To release the substrate, the fixing elements can also be subjected to positive pressure. In a first embodiment, the vacuum fixation consists of several vacuum tracks that emerge at the substrate surface of the substrate holder. The vacuum tracks are preferably individually controllable. In a further embodiment, the fixing elements consist of holes. In a further embodiment, the fixing elements are provided with vacuum lips. Some vacuum tracks and / or vacuum holes are combined to form vacuum zones, which are individuallycontrollable, and therefore can be evacuated or flooded. However, each vacuum zone is independent of the other vacuum zones. This provides the possibility of constructing individually controllable vacuum zones. The vacuum zones are preferably designed in a ring shape. This enables a targeted, radially symmetrical, in particular from the inside to the outside, fixing and / or detaching of a substrate from the EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 19 - holding device. Reference is made to the possibility of vacuum zones from the documents WO2017 / 162272A1. In a further embodiment, the vacuum zones are evenly distributed on the holding surfaces. In a further embodiment, the vacuum zones are located in an edge region of the holding surface of the holding device. The edge region extends in particular to half the radius, preferably to a quarter of the radius, of the holding surface of the holding device. Furthermore, the usea receiving device with studs (English: pin chuck) is disclosed. A studded receiving device is understood to be a receiving device whose surface is not flat, but consists of several small elevations or receiving protrusions, the studs, which form a holding plane and support the substrate thereon. Such a receiving device is described in detail in the publications WO2015 / 113641A1 and WO2017 / 162272A1, to which reference is made here. The use of such a receiving device is advantageous in order to enable the smallest possible contact area between the substrate and the holding surface of the receiving device, so that contamination of the substrate backside is reduced to a minimum or so that no contamination occurs at all. The height of the studs is in particular less than 1 mm, preferably less than 500 µm, more preferably less than 200 µm, most preferably less than 100 µm.In a preferred embodiment, the height of the nubs is between 100 µm and 1000 µm. The number of fixing elements per vacuum zone is arbitrary. In particular, there is at least one fixing element in a vacuum zone, preferably at least two fixing elements, more than 10, more preferably more than 20, even more preferably more than 50, and most preferably more than 100. Several vacuum zones arranged one behind the other can be controlled, in particular activated or deactivated, so that the local fixation of the substrates can be regulated. In particular, a vacuum zone is activated by switching on all fixing elements within the vacuum zone with a preferably adjustable pressure, which specifies the respective holding force of the zone. An important aspect is that between the vacuum zones there are also zones or transition zones without fixing elements and without vacuum supply. These zones are structured so thata gradual vacuum transition from one vacuum zone to the next in the holding surface of the receiving device is enabled. The distance between two vacuum zones is in particular less than 50 mm, preferably less than 25 mm, even more preferably less than 20 mm, most preferably less than 15 mm, most preferably less than 10 mm. If the vacuum zones are designed as circular segments, then the distance would be the distance between the inner circular ring of an outer circular segment and the outer circular ring of an inner circular segment. In addition to the mechanical stresses caused by the fixation of the substrate on the vacuum substrate holder, which may have already been generated in the substrate in pre-process steps, new stress patterns arise from the fixation of the substrates. If forces act on the substrates, for example, which rest on structures of the holding surface, an asymmetric deformation occurs. Forces acting on substrates include, for example,Gravitational force and the suction forces of the individual vacuum zones. This asymmetric deformation is still present during contact between the two substrates and / or during the bonding process and necessarily leads to an asymmetric propagation of the bond wavefront and thus to an undesirable run-out effect. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 21 - distortion in the bonding interface. There are also areas or zones without fixing elements between the vacuum zones, and these areas are designed or structured in such a way that a gradual vacuum transition from one vacuum zone to the next is possible in the holding surface of the holding device. The gradual vacuum transition from one vacuum zone to the next enables a reduction in distortion, as abrupt changes in the conditions for the bond wave are avoided. In particular, abrupt changes in the distortion are avoided, therebythat the conditions for the bond wave change gradually and not abruptly along the different vacuum zones. Abrupt changes should be avoided, because abrupt distortions resulting after the bonding process, for example, are difficult to compensate for with compensation options from post-bond lithography. Gradual distortions, on the other hand, can be more easily minimized. The finer the structures to be imaged, the more the quality of the produced semiconductor components depends on errors, particularly distortions, of the components used. The gradual vacuum transition from one vacuum zone to the next is implemented by design optimization of areas between the vacuum zones. The areas between the vacuum zones are areas without fixing elements and are not actively supplied with vacuum. These areas between one vacuum zone and the next are referred to as transition zones. The individual transition zones between theDifferent vacuum zones can be designed differently. Thus, there are at least two vacuum zones and at least one transition zone on the receiving devices. The basic idea of ​​the invention is that sealing structures are incorporated into the holding surface of the receiving device in the area of ​​the vacuum seal between two EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 22 - vacuum zones, which sealing structures are capable of ensuring a gradual vacuum transition from one vacuum zone to the next. The structures are preferably designed so that this gradual vacuum transition occurs evenly at all locations along the vacuum seal. The structures can be structures in the vacuum seals themselves, for example channels, or recessed vacuum seals, for example by changing the dimensions, or a structuring of the spaces in the area of ​​the transition zone. The transition zones can be permanently - similar to labyrinth orThrottle gap seals – more or less gas leakage through. A leak is an opening or gap in an enclosed space through which gases can escape (or enter in the case of a vacuum). The flow resistance depends, for example, on the gap height. A gap height that is too small means a very high flow resistance. By setting the vacuum seal, for example a ring seal, back from the support plane of the substrates on the holding surface of the holder, the flow cross-section in the area of ​​the vacuum seal is determined by the gap height. This flow cross-section in the area of ​​the vacuum seal is much smaller than in the area of ​​the support surface, where the flow cross-section is determined by the height of the nubs. In the prior art, no transition zone is installed between one vacuum zone and the next. Thus, a vacuum seal is located between two vacuum zones. By setting this one vacuum seal back from theThe flow resistance in the area of ​​the vacuum seal remains enormous compared to the flow resistance in the area of ​​the vacuum zones due to the substrate support surface of the support device. The introduction of transition zones, which have a larger flow cross-section in the area of ​​the transition zone compared to the flow cross-section in the area, makes a gradual vacuum transition from one vacuum zone to another possible. The gradual vacuum transition from one vacuum zone to another is determined by the height of the vacuum seals between two vacuum zones and by the selection of the structures in the transition zone in between. By designing the transition zone and the vacuum seals, the flow resistance in the area of ​​the vacuum seals, in the area of ​​the transition zone, and in the area of ​​the vacuum zones is controlled in such a way that a homogenization between two vacuum zones in thetransition zone occurs because the vacuum in the transition zone is equalized by leakage at the vacuum seals or at the structures. The recession of the vacuum seals relative to the support plane of the substrates on the holding surface of the receiving device defines the gap height h, which is intended to enable leakage. Vacuum seals can, for example, be recessed between 1 µm and 5 µm, preferably between 1 µm and 3 µm. In comparison, the height of the nubs, which define the height of the support surface of the substrates, is, for example, between 100 µm and 1000 µm. In one embodiment, more than one vacuum seal, in particular a sealing ring, is placed between two vacuum zones. The zones between the vacuum seals are not actively supplied with vacuum. The vacuum is established in this intermediate space by leakage at the vacuum seals. This intermediate space functions to equalize, since different leak rates at differentLocations along the vacuum seals above the vacuum seals are compensated. This is particularly the case when the flow cross-section in the area of ​​the gap is larger than the cross-section of the leakage in the area of ​​the individual vacuum seals. These cross-sections are preferably optimized for the best possible result. In particular, the gap height for the vacuum seals or structures EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 24 - is optimized. This leads to a reduction in the leakage in the area of ​​the vacuum seal(s). In a further embodiment, the height of the vacuum seal between a vacuum zone and a transition zone is set back from the surface of the substrate support, in particular knobs. This distance (gap height) is selected such that it is significantly smaller than the height of the knobs. The gap height is in particular more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, evenmore preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than the height of the nubs. This ensures that the pressure drop occurs predominantly in the area of ​​the vacuum seal and that a homogeneity of the vacuum is ensured in the area of ​​the vacuum zone. Another important design criterion is that the cross-section of the leakage should be significantly smaller than the cross-section of the supply line. The cross-section of the leakage is in particular a factor of 2 smaller, preferably a factor of 5 smaller, preferably a factor of 10 smaller, more preferably a factor of 30 smaller, even more preferably a factor of 50 smaller, most preferably a factor of 100 smaller, most preferably more than a factor of 100 smaller than the cross-section of the supply line. This ensures that the leakage is the defining resistance in the system, and that the vacuum values ​​in the area of ​​the support surface (holding surface) are specificallyand can be precisely controlled. In a further embodiment, the vacuum seals between a vacuum zone and a transition zone, or the vacuum seals located in the transition zone between two vacuum zones, are not recessed from the surface of the substrate support. Instead, small channels are incorporated into the vacuum seal at several points along its length at regular intervals. The cross section of these channels is selected such that it is significantly smaller than the cross section in the area of ​​the nubs. The EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 25 - cross section of the channels is more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, even more preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than the cross section in the area of ​​the nubs. This ensures that the pressure drop is predominantly in thearea of ​​the vacuum seal and a homogeneity of the vacuum in the area of ​​the vacuum zone is ensured. In this embodiment, too, a further important design criterion is that the cross-section of the leakage should be significantly smaller than the cross-section of the supply line. The cross-section of the leakage is in particular smaller by a factor of 2, preferably smaller by a factor of 5, preferably smaller by a factor of 10, more preferably smaller by a factor of 30, even more preferably smaller by a factor of 50, most preferably smaller by a factor of 100, most preferably smaller by more than a factor of 100 than the cross-section of the supply line. This ensures that the leakage is the defining resistance in the system, and that the vacuum values ​​in the area of ​​the support surface (holding surface) can be controlled specifically and precisely. In a further embodiment, several vacuum seals are used in the transition zone. Between the vacuum seals that cover the transitionbetween a vacuum zone and a transition zone, additional vacuum seals are arranged. By arranging several (at least one) vacuum intermediate seals, the vacuum transition between two vacuum zones supplied with vacuum can be divided and graded into individual vacuum steps. In a preferred embodiment, if the resistances of the individual vacuum seals are selected to be the same or the vacuum seals are manufactured the same, the individual intermediate stages of the vacuum values ​​can be evenly distributed. In a further advantageous embodiment, by selecting the cross-section of the leak, the vacuum gradation can be deliberately divided non-linearly, but rather selected according to the requirements of the process. The space between the vacuum seals functions to compensate, so that the vacuum gradient is as constant as possible over the entire length of the vacuum seal.is uniform. In this case, the flow cross-section of the intermediate space should preferably be larger than the cross-section of the leak. In particular, the intermediate space should have a cross-section that is a factor of 5 larger, preferably a factor of 10 larger, preferably a factor of 30 larger, more preferably a factor of 50 larger, even more preferably a factor of 100 larger, most preferably a factor of 200 larger, most preferably more than a factor of 200 larger than the leak. In a further embodiment, the transition zone between two vacuum zones enables short evacuation times and short ventilation times. In this particularly optimized embodiment, the cross-section of the leak (gap height) is selected to be as small as possible, which subsequently allows the cross-section of the intermediate space in the transition zone to also be small. Small volumes of the intermediate spaces in the transition zone have the particular advantage that faster evacuation and ventilation times of theHolding device are possible and thus better performance in dynamic use is possible. A further aspect of the invention is to select the distances of the individual vacuum seals so that the vacuum gradient can be substantially maintained even during the travel of the bonding wave. At low contact pressures, achieved by low vacuum values, the substrate is partially lifted from the holding device in the region of the contact point between the two substrates during the travel of the bonding wave, which can locally lead to increased leakage in the region of the vacuum seal. This change in the local vacuum gradient in the transition zone is counteracted by optimizing the distances of several (up to n) vacuum seals in a transition zone. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 27 - The device for bonding a substrate surface of a first substrate to a second substrate surface of a second substrate has a firstA holding device for holding the first substrate, a second holding device for holding the second substrate, wherein the holding surfaces of the holding devices alternately have vacuum zones with fixing elements and intermediate transition zones without fixing elements and without vacuum supply. A substrate holder can additionally have sensors with the aid of which physical and / or chemical properties between the fixed substrate and the holding device can be measured and can be used in a control loop to control the fixings, in particular the vacuum values. In particular, reference is also made to the devices from the documents WO2017 / 162272A1. Further device features are therefore not described in detail here. Furthermore, a method for bonding a first substrate surface of a first substrate to a second substrate surface of a second substrate by means of a deviceprovided. In particular, reference is also made to the already published process steps from the documents WO2017 / 162272A1. In a first process step of a first process, a first substrate is loaded onto a first holding device and a second substrate is loaded onto a second holding device and fixed. In a second process step of a first process, the two substrates are aligned with each other. The alignment of the substrates is not described in detail here. In this respect, reference is made to the documents WO2015 / 082020A1 and WO2014 / 202106A1. In a third process step of a first process, the two substrates are brought closer together by a relative movement of the two substrate holders to each other. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 28 - In a fourth process step, the first and / or the second substrate is bent. In a fifth process step of a first process, theBonding of the substrates after contacting at the bond initiation point and monitoring and controlling the bond wave. Alignment and bonding within the alignment device and / or within the bonding device preferably takes place at atmospheric pressure. The substrates are fixed to the holding devices by vacuum or negative pressure. The holding vacuum is preferably between 5 mbar and 950 mbar negative pressure. The holding vacuum is the fixing force of the fixing elements. In the vacuum fixations, the pressure is in particular between 0.01 mbar and 1000 mbar, preferably between 0.01 mbar and 800 mbar, even more preferably between 0.01 mbar and 500 mbar, most preferably between 0.01 mbar and 100 mbar, and most preferably between 0.01 mbar and 50 mbar. The differential pressure between the larger, external pressure and the smaller, internal pressure in the vacuum fixation elements is then the contact pressure on the substrate, which leads to the fixation of the substrate. Further advantages,Features and details of the invention will become apparent from the following description of preferred embodiments and from the drawings. These schematically show: Figure 1 shows a plan view of a vacuum substrate holder of a first embodiment according to the invention, Figure 2 shows a plan view of a vacuum substrate holder of a second embodiment according to the invention, EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 29 - Figure 3 shows a plan view of a third embodiment according to the invention, Figure 4a shows a cross-sectional view of the holding surface of the vacuum substrate holder from Figure 3 with a transition zone in a first embodiment according to the invention, Figure 4b shows a cross-sectional view of the holding surface of a vacuum substrate holder with a transition zone in a second embodiment according to the invention, Figure 4c shows a cross-sectional view of the holding surface of a vacuum substrate holder with a transition zone in a third embodiment according to the invention, Figure 4d shows aCross-sectional view of the holding surface of a vacuum substrate holder with a transition zone in a fourth embodiment of the invention. Figure 4e shows a cross-sectional view of the holding surface of a vacuum substrate holder with a transition zone in a fifth embodiment of the invention. Figure 4f shows a section of a cross-sectional view of the holding surface of a vacuum substrate holder with a fixed substrate and with a transition zone in a sixth embodiment of the invention. Figure 4g shows a cross-sectional view of the holding surface of the vacuum substrate holder from Figure 3 with a transition zone in a seventh embodiment of the invention. In the figures, identical components or components with the same function are identified by the same reference numerals. The figures show simplified, not necessarily true-to-scale representations of the EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 30 - holding devices with fixing elements and transition zones withoutFixing elements. Figure 1 shows a plan view of a receiving device according to the invention or of a vacuum substrate holder according to the invention in a first embodiment. The vacuum zones 5, 5', 5'' and the transition zones 6, 6', 6'' are arranged in a ring shape, in particular a circular ring, in the illustrated embodiment. The receiving device 1 according to Figure 1 has a holding surface with several fixing elements, in particular vacuum fixing elements 4, 4', 4''. The fixing elements 4, 4', 4'' can be designed differently. The outermost fixing element 4 is in particular designed to be fully circumferential and circular. The inner fixing elements are arranged symmetrically to the center of the receiving device 1. The fixing elements 4', 4'' are in particular designed as thin depressions, which can preferably be evacuated via a fluid opening 7 and thus act as a vacuum fixing element. The fixing elements 4, 4', 4'' from Figure 1 each define aVacuum zone 5, 5', 5''. Figure 1 shows vacuum zones 5, 5', 5'' arranged symmetrically to the center of the receiving device 1. The vacuum zones 5, 5', 5'' are separated by transition zones 6, 6', 6''. The transition zones 6, 6', 6'' each separate two different vacuum zones and are not supplied with vacuum. Thus, they do not have their own fixing elements. A transition zone between two vacuum zones enables the gradual vacuum transition from a first to a second vacuum zone. The transition zone 6' is located, for example, between the vacuum zone 5' and the vacuum zone 5''. The distance between two vacuum zones is in particular less than 50 mm, preferably less than 25 mm, even more preferably less than 20 mm, most preferably less than 15 mm, less than 10 mm. If the vacuum zones are designed as circle segments according to Figure 1, then the distance is the distance between the inner circular ring of an outerCircle segment and the outer circular ring of an inner circular segment. The number of fixing elements per vacuum zone is arbitrary. In particular, there is at least one fixing element in a vacuum zone, preferably at least two fixing elements, preferably more than 10, more preferably more than 20, even more preferably more than 50, most preferably more than 100. In Figure 1, there is one fixing element in a vacuum zone. Several vacuum zones arranged one behind the other can be controlled, in particular activated or deactivated, so that the local fixing of the substrates can be regulated. In particular, a vacuum zone is activated by switching on all fixing elements within the vacuum zone. The holding device 1 can also have different sensors 8, in particular pressure measuring sensors and / or distance sensors. In the base body 2 of the holding device 1, measuring holes 3 for measuring process parameters from the rear of theSubstrates. In the center of the substrate holder 1 there can be a deformation element, in particular a pin or a nozzle, as a curvature changing means. Figure 2 shows a simplified plan view of a holding device 1', wherein the vacuum zones 5, 5', 5'', 5''' and the intermediate transition zones 6, 6', 6'', 6''' are arranged in several rings, preferably circular rings, around the center of the holding device 1'. The fixing elements 4, 4', 4'', 4''' shown in simplified form are each evacuated via their own, separately controllable, fluid openings 7. In a particularly preferred embodiment, the fixing elements 4, 4', 4'', 4''' are set back, in particular milled, from the substrate holder surface. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 32 - If charging pins are used, they can be provided with a seal, for example. The receiving device 1' according to Figure 2 has predominantly transparent measuring holes 3 in order toof the substrates to be able to carry out measurements to monitor the process parameters. Preferably, at least the upper substrate holder has measurement holes. The measurement holes are in particular closable and / or sealed. Distance sensors 8 can be integrated in the holding device 1' in order to measure the distance between the holding surface and the loaded substrate at any time. Figure 3 shows a top view of a holding device 1'' in a third embodiment. The fixing elements 4, 4', 4'' are evacuated via dedicated lines or fluid openings 7 and are in particular recessed, preferably milled, depressions in which knobs 9 are located. The fixing elements 4, 4', 4'' from Figure 3 each define a vacuum zone 5, 5', 5''. Figure 3 shows vacuum zones 5, 5', 5'' that are arranged symmetrically to the center of the holding device 1. The vacuum zones 5, 5', 5'' are separated by transition zones 6, 6'separated. The transition zones 6, 6' each separate two different vacuum zones and are not actively supplied with vacuum. The transition zone 6 enables a gradual vacuum transition between the vacuum zone 5 and the vacuum zone 5'. Analogously, the transition zone 6' enables a gradual vacuum transition between the vacuum zone 5' and the vacuum zone 5''. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 33 - Figure 3 shows an enlarged view of a transition zone 6. A vacuum zone and a transition zone are each separated by vacuum seals. The surface of the transition zone 6 can be structured. The structures 10 can, for example, be further vacuum seals that are reduced in height from the holding surface of the substrates. The vacuum zones 5, 5' with fixing elements 4, 4' are each evacuated via separate fluid openings 7 and are structured as a nubbed surface. The fixation of the substrates takes place by evacuating the space between the studs.Different embodiments of the transition zone(s) are shown and explained in more detail in Figures 4a to 4f. In the receiving device 1'' according to Figure 3, several vacuum zones, in particular several adjacent vacuum zones, can be grouped and switched together. This advantageously allows a larger area to be switched as required, so that the bonding process and the detachment from the receiving device 1'' are even more flexible and precise. The optimal number of vacuum zones per circumference, as well as the optimal number of vacuum zones along the radial directions, as well as the optimal design of the transition zones in between can be optimized, in particular, by empirical measurements and / or simulations. In this case, both substrates to be bonded to one another are fixed, in particular by a fixation that is controllable, in particular over large areas, in such a way that the influencing factors on the developing and propagating bond wavebe reduced as much as possible. A gradual vacuum transition from one vacuum zone to the next in the holding surface of the receiving device through the transition zones that are not actively supplied with vacuum enables a reduction in the distortions induced by bonding, since abrupt changes in the framework conditions for the bonding wave are avoided. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 34 - Figure 4a shows a true-to-scale view of a cross-section of a first embodiment of the holding surface of a receiving device. The transition zone 6 is located between two vacuum zones 5 and 5'. The vacuum zones 5, 5' have a knob structure with knobs 9 with a height H1 and are evacuated via a fluid opening 7, 7'. The transition zone 6 is not actively supplied with vacuum. The width or diameter of the receiving elevations, in particular knobs, is in particular less than 5 mm, preferably less than 2 mm, even more preferably less than 1 mm, atmost preferably less than 500 μm, most preferably less than 200 μm. In a preferred embodiment, the width is between 100 μm and 2 mm. The height of the receiving elevations, in particular knobs, is in particular less than 2 mm, preferably less than 1 mm, even more preferably less than 500 μm, most preferably less than 200 μm. In particular, the ratio between the width or diameter of the receiving elevations and the height of the receiving elevations is greater than 0.01, preferably greater than 1, even more preferably greater than 2, most preferably greater than 10, most preferably greater than 20. The vacuum zones 5, 5' with fixing elements 4, 4' serve to fix the substrate (not shown). Vacuum seals separate the area of ​​the transition zone 6 from the two vacuum zones 5, 5'. The transition zone according to Figure 4a additionally shows two further structures, in particular vacuum seals. Between two vacuum seals in the transition zone 6 isan intermediate space 11 in each case. The gradual vacuum transition from one vacuum zone 5, 5' to the other is determined by the height of the vacuum seals 10 between two vacuum zones 5, 5' and by the selection of the quantity and height of the structures in the intermediate transition zone 6. The embodiment according to Figure 4a shows two further vacuum seals as structure 10. By designing the transition zone 6, the flow resistance in the area of ​​the vacuum seals 10, in the transition zone with intermediate spaces 11 and in the area of ​​the vacuum zones 5, 5' is controlled in such a way that there is an equalization between two vacuum zones 5, 5' in the transition zone 6, since the vacuum in the transition zone 6 is equalized by leakage at the vacuum seals and at the structures 10. The setting back of the vacuum seals 10 relative to the support plane of the substrates on the holding surface of the receiving device defines the gap height h, whichto enable leakage. The vacuum seals can be set back, for example, between 100 nm and 5 µm, preferably between 100 nm and 3 µm, even more preferably between 100 nm and 500 nm. In comparison, the height of the knobs H1, which define a height of the support surface of the substrates, is, for example, between 100 µm and 1000 µm. Figure 4b shows a second embodiment of the transition zone 6'. In this embodiment too, the vacuum seals 10' are set back from the support plane of the substrates (height of the knobs H1). The intermediate space 11' is filled up to a height H2 according to Figure 4b so that the volume of the intermediate spaces 11' of the transition zone 6' is smaller. This makes it possible to control the homogenization between two vacuum zones 5, 5' in the transition zone 6'. Figure 4c shows a third embodiment of the transition zone 6'' with an additional vacuum seal in the transition zone 6''. According to Figure 4c, the vacuum seals 10'' have a heightH3 which is significantly smaller than the height of the nubs H1 for supporting the substrate. The vacuum zones 5, 5' are evacuated via a fluid opening 7, 7', while the transition zone 6'' is not actively supplied with vacuum. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 36 - In a fourth embodiment 6''' according to Figure 4d, the vacuum seals 10''' between a vacuum zone 5, 5' and a transition zone 6''', or the vacuum seals 10''' located in the transition zone 6''' between two vacuum zones 5, 5', are not recessed from the surface of the substrate support. Instead, small channels 12 are incorporated into the vacuum seal 10''' at several points at regular intervals along its length. The cross-section of these channels 12 is selected so that it is significantly smaller than the cross-section in the area of ​​the knobs 9. The cross-section of the channels is in particular more than 10 times smaller, preferably more than 30 times smaller, more preferablymore than 50 times smaller, more preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than the cross section in the area of ​​the knobs 9. This ensures that the pressure drop occurs predominantly in the area of ​​the vacuum seal 10''' and that a homogeneity of the vacuum is ensured in the area of ​​the vacuum zone 5, 5'. Between two vacuum seals with channels there are gaps 11'''. The cross section of the leak or the flow cross-sectional area of ​​the sealing structures should be significantly smaller than the cross section of the supply line. The cross section of the leak is in particular a factor of 2 smaller, preferably a factor of 5 smaller, more preferably a factor of 10 smaller, even more preferably a factor of 30 smaller, most preferably a factor of 50 smaller, most preferably a factor of 100 smaller than the cross section of the supply line. This ensures that the leakage of thedefining resistance in the system, and that the vacuum values ​​in the area of ​​the support surface (holding surface) can be controlled specifically and precisely. The axial distance between the vacuum seals or vacuum structures 10''' is preferably between 0.5 mm and 50 mm, more preferably between 2 mm and 50 mm, even more preferably between 5 mm and 50 mm. The width of the vacuum structures is in particular between 0.5 µm EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 37 - and 1 mm, preferably between 750 µm and 1000 µm, more preferably between 5 µm and 500 µm. Figure 4e shows a fifth embodiment of the transition zone 6. IV where the area of ​​the exercise I VThe transition zone is largely filled and only line structures 10 with a height H4 smaller than the height of the knobs H1 or with a gap height h are set back from the knob surface. The line structures are arranged on a wide vacuum seal. The axial spacing of the line structures is uniform and is in particular 1.5 µm. The uniform axial spacing of the line structures is preferably between 0.1 µm and 10 µm, more preferably between 0.5 µm and 5 µm. The vacuum zones 5, 5' with knobs 9 are actively evacuated via the fluid openings 7, 7'. Figure 4f shows a section of a cross-sectional view of the holding surface of a substrate receiving device with a fixed substrate 13, with a transition zone 6 in a sixth embodiment. Figure 4f shows nubs 9 with a height H, the gap height h of the recessed vacuum seals and structures 10 as well as the axial distance t between structures.The selection of H, h, and t, as well as the number of vacuum seals or structures in transition zone 6, enables design optimization of transition zone 6. By homogenizing the substrate fixation from one vacuum zone to the other through the gradual vacuum transition across the transition zone, the boundary conditions for the bond wave will also change gradually. This reduces and evens out distortions, leading to increased bond product quality. Figure 4g shows a seventh embodiment. V V ngsform of the transition zone Vne 6 with additional vacuum seals 10 in the transition zone 6 analogous to Figure 4c. According to Figure 4g, the vacuum seals 10 Va height H3 which is significantly smaller than the height H1 for supporting the substrate. In the preferred embodiment, the vacuum seals 10 are located between two rows of receiving elevations 9 or rows of studs. The studs 9, which form a holding plane and carry the substrate thereon, also support the substrate in the transition zone 6. The vacuum zones 5, 5' are evacuated via a fluid opening 7, 7', while the transition zone 6 is not actively supplied with vacuum. The vacuum seals or sealing structures can, for example, be recessed by between 100 nm and 5 µm, preferably between 100 nm and 3 µm, more preferably between 200 nm and 1 µm, and most preferably between 200 nm and 500 nm, compared to the receiving surface provided by the receiving protrusions. The axial spacing of the studs is preferably between 1 mm and 8 mm, more preferably between 2 mm and 6 mm.The width or diameter of the receiving elevations, in particular nubs, is in particular less than 5 mm, preferably less than 2 mm, even more preferably less than 1 mm, most preferably less than 500 μm, most preferably less than 200 μm. In a preferred embodiment, the width is between 100 μm and 2 mm. The width of the sealing structures 10V is less than the axial spacing of the nubs and is in particular less than 5 mm, preferably less than 2 mm, even more preferably less than or equal to 1 mm.

[0002] EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 39 - List of reference symbols 1 Vacuum substrate holder, receiving device, substrate receiving device, substrate holder 2 Base body 3 Measuring hole 4, 4', 4'', 4''' Fixing elements 5, 5', 5'', 5''' Vacuum zone 6, 6', 6'', 6''', 6 IV , 6 V Transition zone 7, 7' Fluid opening 8 Sensor 9 Mounting elevations, nubs 10, 10', 10'', 10''', 10 IV , 10V Sealing structure, structure, vacuum seal 11, 11', 11'', 11''', 11 V Space 12 Channel, opening 13 Substrate H, H1, H2, H3, H4 Height h Gap height t Axial distance of the sealing structures

Claims

EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 40 - Patent Claims 1) Vacuum substrate holder (1) for fixing a substrate (13), comprising: a) a first vacuum zone (5, 5', 5'', 5''') with at least one first fixing element (4, 4', 4'', 4'''), b) a second vacuum zone (5, 5', 5'', 5''') with at least one second fixing element (4, 4', 4'', 4'''), c) receiving elevations (9) which are arranged at least in the first vacuum zone (5, 5', 5'', 5''') and at least in the second vacuum zone (5, 5', 5'', 5'''), wherein the substrate (13) is arranged in a fixed state on a receiving surface provided by the receiving elevations (9) and d) at least one vacuum zone (6, 6', 6'', 6''', 6 IV nnende Übergang , 6 V ), whereby the transition zone (6, 6', 6'', 6''', 6 IV IV , 6 V V) has at least one sealing structure (10, 10', 10'', 10''', 10 , 10), characterized in that in the fixed state the first vacuum zone (5, 5', 5'', 5''') and the second vacuum I V umz Vone (5, 5', 5'', 5''') are fluidically connected to each other by the transition zone (6, 6', 6'', 6''', 6 , 6). EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 41 - 2. Vacuum substrate holder (1) according to claim 1, wherein the at least one guiding structure (10, 10', 10'', 10''', 10 I ine Dic V , 10 V ) has at least one opening and through which at least one opening a flow cross-sectional area of ​​the sealing structure (10, 10', 10'', 10''', 10 IV , 10 V ) can be specified.

3. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the at least one transition zone (6, 6', 6'', 6''', 6 , 6) each I V because at least two sealing structures (10, 10', 10'', 10''', 10 , 10 V) and the transition zone (6, 6', 6'', 6''', 6 IV V , 6) between the most distant sealing structures (10, 10', 10'', 10'' IV V I ' V, 10 V , 10) of the at least one transition zone Ve (6, 6', 6'', 6''', 6 , 6) forms an intermediate space (11, 11', 11'', 11''', 11 ).

4. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the respective flow cross-sectional area of ​​the two furthest from I V noa Vnder removed sealing structures (10, 10', 10'', 10''', 10 , 10) is the same size.

5. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the flow cross-sectional area of ​​the intermediate space (11, 11', 11'', 11''', 11) is larger than the flow cross-sectional area of ​​the sealing structures (10, 10', 10' 0''', 10 IV ', 1 , 10 V ) a transition zone (6, 6', 6'', 6''', 6 IV , 6 V ). EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 42 - 6. Vacuum substrate holder (1) according to one of the preceding claims, wherein the flow cross-sectional area of ​​the intermediate space (11, 11', 11'', 11''', 11) is a factor of 5 larger, preferably a factor of 10 larger, more preferably a factor of 30 larger, even more preferably a factor of 50 larger, most preferably a factor of 100 larger, most preferably a factor of 200 larger than the flow cross-sectional area of ​​the sealing structures (1 ', 10 IV , 10 V 0 ) of a transition zone (6, 6', 6'', 6''', 6 I , 10', 10'', 10'' V , 6 V ).

7. Vacuum substrate holder (1) according to claim 1, wherein the at least one sealing structure (10, 10', 10'', 10''', 10 IV , 10 V) has a uniform height (H1, H2, H3, H4) relative to a vacuum substrate holder surface and the height (H1, H2, H3, H4) of the at least one sealing structure (10, 10', 10'', 10''', 10 , 10) is less than a height (H) of the receiving elevations (9) relative to the vacuum substrate holder surface, so that in the fixed state a gap with a gap height (h) is formed between the at least one sealing structure (10, 10', 10'', 10''', 10 , 10) and the substrate (13).

8. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the gap height (h) is more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, even more preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than a height (H) of the receiving elevations (9). EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 43 - 9. Vacuum substrate holder (1) according to one of the preceding claims, wherein the at least one sealing structure (10, 10', 10'', 10''', 10 , 10) in the fixed state at least partially rests against the S Iu Vbstr Vat (13) and along the transition zone (6, 6', 6'', 6''', 6 , 6) offset channels (12) in '', 10''', 10 I the at least one sealing structure (10, 10', 10 V , 10 V) are formed.

10. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein a distance between the at least one first vacuum zone (5, 5', 5'', 5''') and the at least one second vacuum zone (5, 5', 5'', 5''') is less than 50 mm, preferably less than 25 mm, even more preferably less than 20 mm, most preferably less than 15 mm, most preferably less than 10 mm.

11. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the at least one fixing element (4, 4', 4'', 4''') of a vacuum zone has at least one fluid opening (7, 7'), and wherein a total flow area of ​​the respective vacuum zone (5, 5', 5'', 5''') is formed by all fluid openings (7, 7') of the respective vacuum zone (5, 5', 5'', 5'''), and wherein the flow qu I V The cross-sectional area of ​​the sealing structure (10, 10', 10'', 10''', 10 , 10) connected to the respective vacuum I Vzon Ve (5, 5', 5'', 5''') adjacent transition zone (6, 6', 6'', 6''', 6 , 6) is a factor of 2 smaller, preferably a factor of 5 smaller, more preferably a factor of 10 smaller, even more preferably a factor of 30 smaller, most preferably a factor of 50 smaller, most preferably a factor of 100 smaller than the total flow area of ​​the fixing elements (4, 4', 4'', 4'''), of the respective adjacent vacuum zone (5, 5', 5'', 5'''). EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 44 - 12. Vacuum substrate holder (1) according to one of the preceding claims, wherein the flow cross-sectional area of ​​the sealing structure , 10', 10'', 10''', 10 IV r (10 , 10 V ) more than 10 times smaller, preferably more than 30 times smaller, more preferably more than 50 times smaller, even more preferably more than 80 times smaller, most preferably more than 100 times smaller, most preferably more than 200 times smaller than a total opening area between the receiving elevations (6, 6', 6'', 6''', 6I u Vngen (9) one directly adjacent to the transition zone, 6 V ) adjacent vacuum zone (5, 5', 5'', 5''').

13. Vacuum substrate holder (1) according to at least one of the preceding claims, wherein the vacuum substrate holder has further vacuum zones (5, 5', 5'', 5'''), wherein the further vacuum zones (5, 5') are each separated by further transition zones (6, 6', 6'', 6''', 6 I , V 5'', 5''') j , 6 V ) are separated, and wherein in the radial direction adjacent vacuum zones (5, 5', 5'', 5''') each Ie Vils fluidically through the further transition zones (6, 6', 6'', 6''', 6 , 6 V ) are connected to each other. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 45 - 14. Device for bonding comprising at least one vacuum substrate holder (1) according to at least one of claims 1-13. EV Group E EV TGha 1ll0n4e1r2 G1m-WbHO - 46 - 15. A method for bonding substrates with the following steps, in particular in the following order: i) providing a first substrate (13) on a vacuum substrate holder (1) according to at least one of claims 1-13, ii) providing a second substrate on a substrate holder, iii) bonding the first substrate (13) to the second substrate.

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