Method of manufacturing an optoelectronic device

Abstract

Method of manufacturing an optoelectronic device The present description relates to a method of manufacturing an optoelectronic device comprising the steps of manufacturing display pixel circuits (12) each comprising an emission face, and on the face, walls (22) delimiting at least one cavity (24), fixing the display pixel circuits (12) to a support (30), and filling the at least one cavity (24) of each display pixel circuit (12) with a first filling material to form a first color conversion module (32) in the cavity (24). Figure for abstract: Fig. 8

Description

Title of the invention: Method for manufacturing an optoelectronic device Technical field

[0001] The present application relates to a method of manufacturing an optoelectronic device, in particular a display screen or an image projection device, comprising color conversion modules. Prior art

[0002] A pixel of an image corresponds to the unit element of the image displayed or captured by an optoelectronic device. The element of the optoelectronic device allowing the display of an image pixel is called a display pixel of the optoelectronic device. A display pixel of an optoelectronic device such as a color image display screen or a color image projection device generally comprises, for the display of an image pixel, at least three components, called display sub-pixels, which each emit light radiation substantially in a single color (for example, red, green and blue). The superposition of the radiation emitted by the display sub-pixels provides the observer with the colored sensation corresponding to the image pixel of the displayed image.

[0003] A display sub-pixel may comprise a light source, in particular a light-emitting diode, covered with a color conversion module, for example in the form of a photoluminescent block. The photoluminescent block comprises phosphors or particles of at least one photoluminescent material configured, when excited by the light emitted by the associated light-emitting diode, to emit light at a wavelength different from the wavelength of the light emitted by the associated light-emitting diode. The photoluminescent particles may be in the form of quantum dots.

[0004] Walls may be provided surrounding sub-pixels comprising or not comprising color conversion modules and which reflect or absorb the radiation emitted by the light-emitting diodes but also the color conversion modules. The walls then reduce the crosstalk between adjacent sub-pixels. Another advantage of the walls is to serve as a means of confinement for the deposition of the materials constituting the color conversion modules.

[0005] An exemplary method of manufacturing an optoelectronic device, including a display screen, includes fabricating display pixels on a semiconductor wafer, cutting the wafer to separate the display pixels, and transferring and attaching the display pixels to a display screen support. An in The disadvantage is that the processes for cutting the display pixels and / or transferring the display pixels from the plate to the support and / or attaching the display pixels to the support may require high-energy steps and / or temperatures above 200°C and that the optical conversion properties of the color conversion modules may degrade during these steps. The thermal balance of the process for manufacturing the display pixels and / or attaching the display pixels to the support may be even more unfavorable for the color conversion modules when the display pixel corresponds to a smart pixel, i.e. when it comprises an electronic circuit for controlling the light-emitting sources of the display sub-pixels. Summary of the invention

[0006] One embodiment overcomes all or part of the drawbacks of optoelectronic devices with known color conversion modules.

[0007] One embodiment provides a method of manufacturing an optoelectronic device comprising the following steps, in order: a) manufacturing display pixel circuits each comprising an emitting face, and on the face, walls delimiting at least one cavity; (b) attaching the display pixel circuits to a support; and c) filling the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.

[0008] The walls surrounding the first color conversion modules advantageously reduce optical crosstalk between adjacent display subpixels of the display pixel circuitry. Forming the first color conversion modules after the display pixel circuits have been placed on the substrate advantageously allows the first filler material to be selected at a late stage in the manufacture of the optoelectronic device. Another advantage of forming the first color conversion modules after the display pixel circuits have been placed on the substrate is that the first color conversion modules are not exposed to high temperatures that may be present, particularly when attaching the display pixel circuits to the substrate.Another advantage of forming the first color conversion modules after the display pixel circuits are placed on the medium is that there is no need to provide protection for the first color conversion modules that would be necessary if the first color conversion modules were formed before the display pixel circuits are separated or more generally before the display pixel circuits are placed on the medium.

[0009] An advantage of forming the walls before the step of transferring the display pixel circuits onto the support is that this makes it easier to produce the walls by manufacturing steps including photolithography steps because the display pixel circuits have not yet undergone transfer and are therefore correctly aligned on the plate. Indeed, the transfer induces potential offset or rotation positioning defects which make the implementation of photolithography steps to form the walls impossible, complex or imprecise because they must take into account multiple degrees of error.

[0010] According to one embodiment, the first filler material comprises quantum dots. Since the optical conversion properties of the quantum dots may degrade when the quantum dots are exposed to high temperatures, forming the first color conversion modules after the display pixel circuits have been placed on the support advantageously makes it possible not to expose the quantum dots to high temperatures.

[0011] According to one embodiment, the method comprises, after step c), the step of forming a protective film completely covering each display pixel circuit and the support between the display pixel circuits. The film can advantageously be waterproof and oxygen-tight to protect the first color conversion modules. The film can advantageously be simply deposited on the entire optoelectronic device just after the deposition of the color conversion modules and thus avoid deterioration thereof.

[0012] According to one embodiment, step a) comprises forming several copies of the display pixel circuit on a plate and cutting the plate to separate the display pixel circuits. This advantageously makes it possible to form the walls using conventional microelectronics manufacturing technologies.

[0013] According to one embodiment, in step a), the formation of the walls comprises photolithography steps. This advantageously makes it possible to produce walls whose thickness may be of the order of a micrometer or less than a micrometer. Advantageously, identical photolithography steps may be implemented while the display pixel circuits may be intended for different electronic devices, for example for different types of display screens. In particular, the same masks may be used to form the walls of the display pixel circuits, even if the display pixel circuits may be intended for different electronic devices.

[0014] According to one embodiment, the method comprises, in step a), filling the cavities with a second filling material and, after step b) and before step c), removing the second filling material from the cavities. This advantageously makes it possible to obtain temporary blocks in the cavities which make it possible to consolidate the cavities for later stages of the manufacturing process The presence of the temporary blocks in the cavities further advantageously allows obtaining a display pixel circuit having a flat upper face, which facilitates the use of a gripper for transferring the display pixel circuits from the plate to the support.

[0015] According to one embodiment, in step c), the filling of the at least one cavity of each display pixel circuit with the first filling material is carried out by inkjet printing, by aerosol jet printing, or by extrusion printing. Advantageously, the methods for filling the cavities are adapted to compensate for the deviations between the actual position and / or orientation of the display pixel circuits and the desired ideal position and / or orientation. This would not be the case for the methods for manufacturing the walls if the walls were manufactured after the transfer of the display pixel circuits onto the support.

[0016] According to one embodiment, in step a), the walls delimit at least three cavities for each display pixel circuit.

[0017] According to one embodiment, the walls delimit at least two cavities for each display pixel circuit, and wherein step c) comprises filling at least one of the cavities of each display pixel circuit with a third filling material, different from the first filling material, to form a second color conversion module in the cavity.

[0018] According to one embodiment, the ratio between the height and the thickness of the walls is in the range of 0.5 to 50.

[0019] According to one embodiment, the method comprises, in step a), the formation of light-emitting diodes for each display pixel circuit.

[0020] According to one embodiment, the support comprises a slab provided with electrical connection tracks, the method comprising, in step b), the transfer of the display pixel circuits onto the slab, the display pixel circuits being fixed to the electrical connection tracks, the pitch between the display pixel circuits on the slab being different from the pitch between the display pixel circuits on the plate.

[0021] According to one embodiment, the optoelectronic device is a display screen.

[0022] An embodiment also provides a display screen obtained by the method manufacturing process described above. Brief description of the drawings

[0023] These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the attached figures among which:

[0024] [Fig.l] and [Fig.2] are respectively a side sectional view and a view of above, partial and schematic, of a structure obtained at a stage of an embodiment of a method of manufacturing a display screen;

[0025] [Fig.3], [Fig.4], and [Fig.5] are partial and schematic side sectional views matic, of structures obtained at other stages of the embodiment of the method of manufacturing a display screen;

[0026] [Fig.6] is a partial and schematic top view of the structure of [Fig.5]

[0027] [Fig.7], [Fig.8], and [Fig.9] are partial and schematic side sectional views matic, of structures obtained at other stages of the embodiment of the method of manufacturing a display screen;

[0028] [Fig. 10] and [Fig. 11] are partial and schematic side sectional views of the structure obtained during a transfer step according to two embodiments;

[0029] [Fig. 12] is a partial, schematic, side sectional view of the structure at during a cavity filling stage;

[0030] [Fig. 13] is a partial and schematic top view of a display screen illustrating incorrect positioning of display pixels;

[0031] [Fig. 14] is a partial and schematic sectional view of an embodiment of an optoelectronic device with light-emitting diodes and photoluminescent blocks; and

[0032] [Fig.15], [Fig.16], and [Fig.17] are sectional, partial and schematic views matics, of embodiments of a light-emitting diode. Description of the embodiments

[0033] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0034] For the sake of clarity, only the steps and elements useful for understanding the embodiments described have been represented and are detailed.

[0035] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0036] In the following description, when referring to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., it is made reference unless otherwise specified to the orientation of the figures or to a display pixel in a normal position of use.

[0037] Unless otherwise specified, the expressions "about", "approximately", "substantially", and "of the order of" mean to within 10%, preferably to within 5%.

[0038] The transmittance of a layer corresponds to the ratio between the intensity of the radiation leaving the layer through an exit face and the intensity of the radiation entering the layer through an entry face opposite the exit face. In the remainder of the description, a layer or a film is said to be opaque to radiation when the transmittance of the radiation through the layer or the film is less than 10%. In the remainder of the description, a layer or a film is said to be transparent to radiation when the transmittance of the radiation through the layer or the film is greater than 10%.

[0039] In the remainder of the description, a film or layer is said to be waterproof when the permeability of the film or layer to water at 40°C is less than 1.10 'g / (m2 *day). The water permeability can be measured according to the ASTM F1249 method entitled "Standard Test Method for Water Vapor Transmission Rate Through Plastic Film and Sheeting Using a Modulated Infrared Sensor".

[0040] [Fig. 1] and [Fig. 2] are respectively a side sectional view and a top view, partial and schematic, of a structure obtained at a step of an embodiment of a method for manufacturing an optoelectronic device corresponding to a display screen.

[0041] According to one embodiment, the method comprises forming on a semiconductor wafer 10 several copies of a display pixel 12, also called a display pixel circuit, for a display screen. The wafer 10 may rest on a support 11. For example, in [Fig.l], four copies of the display pixel 12 are visible and, in [Fig.2], eight copies of the display pixel 12 are visible. Each display pixel 12 comprises several display sub-pixels 14, for example three or four display sub-pixels 14. For example, as can be seen in [Fig.2], each display pixel 12 comprises four display sub-pixels 14. Each display sub-pixel 14 comprises a light source, not shown, for example a light-emitting diode. According to one embodiment, in top view, each display pixel 12 is inscribed in a square whose side measures from 4 pm to 2 mm.According to one embodiment, in top view, each display sub-pixel 14 is inscribed in a square whose side measures from 2 pm to 1.5 mm.

[0042] The plate 10 comprises a main structure 16 having an upper face 18 and a lower face 20 opposite the upper face 18. According to one embodiment, the faces 18 and 20 are parallel. According to one embodiment, the faces 18 and 20 are planar. The plate 10 comprises, for each display pixel 12, walls 22 which project from the upper face 18 and delimit a cavity 24 for each sub- display pixel 14. For at least some display sub-pixels 14, the cavity 24 of the display sub-pixels 14 is intended to receive for example a color conversion module, for example a photoluminescent block as will be described later. The walls 22 are at least partly made of a material reflecting or absorbing the radiation emitted by the light sources and the photoluminescent blocks of the display pixel 12.

[0043] According to one embodiment, the walls 22 may be formed from a reflective material or from a material covered with a coating reflective of the wavelength of the radiation emitted by the photoluminescent blocks and / or the light-emitting diodes. The reflective material may be a metallic material, in particular iron, copper, aluminum, tungsten, silver, titanium, hafnium, zirconium or a combination of at least two of these compounds. Preferably, the walls 22 are formed from a material compatible with the manufacturing methods used in microelectronics.

[0044] According to one embodiment, the height of the walls 22 measured relative to the face 18 is in the range of 300 nm to 200 pm, preferably 1 pm to 50 pm. According to one embodiment, the thickness of the walls 22, measured in a direction parallel to the face 18, is in the range of 100 nm to 50 pm, preferably 0.1 pm to 50 pm. According to one embodiment, the aspect ratio of the walls 22, i.e. the ratio between the height and the thickness of the walls 22, is in the range of 0.5 to 20.

[0045] According to one embodiment, the manufacturing of the display pixels 12 of the plate 10 uses conventional microelectronics techniques. In particular, according to one embodiment, the walls 22 are manufactured by conventional deposition and etching techniques in microelectronics, including in particular photolithography steps. This advantageously makes it possible to produce walls 22 whose thickness can be of the order of a micrometer or less than a micrometer.

[0046] According to one embodiment, the fabrication of the walls 22 comprises the deposition of a layer of the material composing the core of the walls over the entire plate 16 and the etching of this layer, for example a dry etching, to delimit the walls 22. According to one embodiment, the fabrication of the walls 22 comprises the deposition of a layer of resin on the plate 16, the formation of openings in the layer of resin at the desired locations of the walls 22, the deposition of the material composing the core of the walls 22 in the openings, and the removal of the layer of resin. The reflective coating of the walls 22 can then be produced.

[0047] [Fig. 3] is a partial and schematic side sectional view of the structure obtained after a step of filling the cavities 24 with a temporary filling material so as to form a temporary block 26 in each cavity 24. The temporary blocks 26 make it possible in particular to consolidate the cavities 24 for subsequent steps. external aspects of the manufacturing process. According to one embodiment, the temporary filling material is a photosensitive resin. In [Fig. 3], each temporary block 26 is shown extending from the upper face 18 and stopping at the tops of the walls 22. Alternatively, the temporary filling material can fill each cavity 24 and form a layer covering the walls 22. The presence of the temporary blocks 26 makes it possible to obtain display pixels 12 having a substantially planar upper face 27. According to another embodiment, the temporary blocks 26 are not present.

[0048] [Fig. 4] is a partial and schematic side sectional view of the structure obtained after a step of separating the display pixels 12. The step of separating the display pixels 12 may comprise cutting the plate 10 by techniques known in microelectronics, for example by sawing.

[0049] [Fig.5] and [Fig.6] are respectively a side sectional view and a top view, partial and schematic, of the structure obtained after a step of placing at least a portion of the display pixels 12 on a support 30, also called a slab, of the display screen. According to an embodiment described in more detail below, the method of placing the display pixels 12 implements a pick and place method in which the display pixels 12 are manipulated individually one after the other to be placed at desired locations on the slab 30, for example using a gripper. According to another embodiment described in more detail below, the method of manipulating the display pixels 12 implements a mass transfer method in which several display pixels 12 are manipulated simultaneously.According to one embodiment, the manipulation of the display pixels 12 comprises the exertion of a mechanical force on the walls 22 and / or on the temporary blocks 26 of the display pixel 12. The presence of the temporary blocks 26 advantageously makes it possible to obtain a display pixel 12 having a flat upper face, which facilitates the use of a gripper.

[0050] By way of example, each display pixel 12 can be fixed to the panel 30 by molecular bonding or by means of a bonding material, in particular an electrically conductive epoxy glue.

[0051] According to one embodiment, the slab 30 comprises connection tracks, not shown, the display pixels 12 being fixed to the connection tracks. According to one embodiment, the pitch between the display pixels 12 on the slab 30 is different from the pitch between the display pixel circuits 12 on the plate 10.

[0052] [Fig.7] is a partial and schematic side sectional view of the structure obtained after a step of removing the temporary blocks 26 present in the cavities 24 of each display pixel 12. The removal of the temporary blocks 26 can be carried out by wet etching or dry etching.

[0053] [Fig.8] is a partial and schematic side sectional view of the structure obtained after a step of filling, for each display pixel 12, at least some cavities 24 of the display pixel 12, preferably each cavity 24 of the display pixel 12, with a final filling material. The final filling material may not be the same for each cavity 24. According to one embodiment, for at least some of the cavities 24 of the display pixel 12, the final filling material corresponds for example to a photoluminescent material. For at least some of the cavities 24 of the display pixel 12, a photoluminescent block 32 is then formed in the cavity 24. According to one embodiment, for at least some of the cavities 24 of the display pixel 12, the final filling material may correspond for example to a non-photoluminescent and transparent material.For at least some of the cavities 24 of the display pixel 12, a transparent block 34 is then formed in the cavity 24.

[0054] In the embodiment described previously in relation to Figures 7 and 8, all the temporary blocks 26 are removed at the same time and then all the photoluminescent blocks 32 and the transparent blocks 34 are formed. According to another embodiment, the temporary blocks 26 may not all be removed at the same time but sets of temporary blocks 26 may be removed at successive removal steps. A step of removing a set of temporary blocks 26 is then followed by a step of forming photoluminescent blocks 32 and / or transparent blocks 34 in at least some of the cavities 24 freed in the previous removal step. A step of removing another set of temporary blocks 26 followed by a step of forming photoluminescent blocks 32 and / or transparent blocks 34 in at least some of the cavities 24 freed are then implemented, and so on.

[0055] According to one embodiment, each photoluminescent block 32 or transparent block 34 is located opposite one of the light-emitting diodes or a set of light-emitting diodes. Each photoluminescent block 32 comprises phosphors or particles of at least one photoluminescent material adapted, when excited by the light emitted by the associated light-emitting diode, to emit light at a wavelength different from the wavelength of the light emitted by the associated light-emitting diode. According to one embodiment, the display pixel 12 comprises at least two types of photoluminescent blocks 32.Each photoluminescent block 32 of the first type is adapted to convert the radiation provided by the light-emitting diodes that it covers into a first radiation at a first wavelength and each photoluminescent block 32 of the second type is adapted to convert the radiation provided by the light-emitting diodes that it covers into a second radiation at a second wavelength. According to one embodiment, the display pixel comprises at least three . types of photoluminescent blocks 32, the photoluminescent block of the third type being adapted to convert the radiation provided by the light-emitting diodes which it covers into a third radiation at a third wavelength. The first, second and third wavelengths may be different.

[0056] According to one embodiment, the light-emitting diodes of the pixels 12 are adapted to emit blue light, i.e. radiation whose wavelength is in the range of 430 nm to 490 nm. According to one embodiment, the first wavelength corresponds to green light and is in the range of 510 nm to 570 nm. According to one embodiment, the second wavelength corresponds to red light and is in the range of 600 nm to 720 nm.

[0057] According to another embodiment, the light-emitting diodes of the pixels 12 are adapted to emit radiation in the ultraviolet. According to one embodiment, the first wavelength corresponds to blue light and is in the range of 430 nm to 490 nm. According to one embodiment, the second wavelength corresponds to green light and is in the range of 510 nm to 570 nm. According to one embodiment, the third wavelength corresponds to red light and is in the range of 600 nm to 720 nm.

[0058] According to one embodiment, each photoluminescent block 32 comprises a matrix in which nanometric-sized monocrystalline photoluminescent particles of a semiconductor material are dispersed, also called semiconductor nanocrystals or nanoluminophore particles hereinafter. The internal quantum efficiency QYint of a photoluminescent material is equal to the ratio between the number of photons emitted and the number of photons absorbed by the photoluminescent substance. The internal quantum efficiency QYint of the semiconductor nanocrystals is greater than 5%, preferably greater than 10%, more preferably greater than 20%.

[0059] According to one embodiment, the average size of the nanocrystals is in the range of 0.5 nm and 1000 nm, preferably from 0.5 nm to 500 nm, even more preferably from 1 nm to 100 nm, in particular from 2 nm to 30 nm. For dimensions less than 50 nm, the photoconversion properties of the semiconductor nanocrystals depend essentially on substantially three-dimensional quantum confinement phenomena. The semiconductor nanocrystals then correspond to quantum dots.

[0060] According to one embodiment, the semiconductor material of the semiconductor nanocrystals is chosen from the group comprising cadmium selenide (CdSe), indium phosphide (InP), cadmium sulfide (CdS), zinc sulfide (ZnS), zinc selenide (ZnSe), cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium oxide (CdO), zinc cadmium oxide (ZnCdO), zinc sulfide and cadmium (CdZnS), cadmium zinc selenide (CdZnSe), indium silver sulfide (AgInS2), perovskites of the PbScX3 type, where X is a halogen atom, in particular iodine (I), bromine (Br) or chlorine (Cl), and a mixture of at least two of these compounds. According to one embodiment, the semiconductor material of the semiconductor nanocrystals is chosen from the materials cited in the publication in the name of Le Blevenec et al. of Physica Status Solidi (RRL) - Rapid Research Letters Volume 8, No. 4, pages 349-352, April 2014.

[0061] According to one embodiment, the dimensions of the semiconductor nanocrystals are chosen according to the desired wavelength of the radiation emitted by the semiconductor nanocrystals. For example, CdSe nanocrystals whose average size is of the order of 3.6 nm are suitable for converting blue light into red light and CdSe nanocrystals whose average size is of the order of 1.3 nm are suitable for converting blue light into green light. According to another embodiment, the composition of the semiconductor nanocrystals is chosen according to the desired wavelength of the radiation emitted by the semiconductor nanocrystals.

[0062] The matrix of the photoluminescent blocks 32 is transparent to the radiation emitted by the photoluminescent particles and / or the light-emitting diodes LED, preferably more than 80%. The matrix is, for example, made of silica. The matrix is, for example, made of any polymer that is at least partly transparent, in particular silicone, epoxy, acrylic resin of the poly(methyl methacrylate) (PMMA) type, or polyacetic acid (PLA). The matrix may in particular be made of an at least partly transparent polymer used with three-dimensional printers. The matrix may correspond to a glass deposited by centrifugation (SOG), photosensitive or non-photosensitive. According to one embodiment, the matrix contains from 2% to 90%, preferably from 10% to 60%, by weight of nanocrystals, for example approximately 30% by weight of nanocrystals.According to one embodiment, the transparent blocks 34 comprise only the matrix as described previously.

[0063] The thickness of the photoluminescent blocks 32 depends on the concentration of nanocrystals and the type of nanocrystals used. The height of the photoluminescent blocks 32 is less than or equal to the height of the walls 22. In top view, each photoluminescent block 32 may correspond to a square, a rectangle, an "L" shaped polygon, etc., which may be equal to making a square having a side measuring from 1 pm to 100 pm, preferably from 3 pm to 15 pm. The aspect ratio of the blocks 32, i.e. the ratio between the height and the maximum width of the block, may be between 0.01 and 10, preferably between 0.05 and 2.

[0064] The walls 22, which surround the photoluminescent blocks 32 and the transparent blocks 34, advantageously make it possible to reduce optical crosstalk between sub-pixels. adjacent display.

[0065] According to one embodiment, the filling of the cavities 24 with the final filling material is carried out by inkjet printing, in particular by electrodynamic jet printing, by aerosol jet printing, or by extrusion printing.

[0066] Forming the photoluminescent blocks 32 and the transparent blocks 34 after the display pixels 12 have been placed on the panel 30 advantageously makes it possible to select the filling material to be used at a late stage in the manufacture of the optoelectronic device. Furthermore, the steps of manufacturing the display pixels 12 and placing the display pixels 12 on the panel 30 may be common for different types of optoelectronic devices for which the photoluminescent blocks 32 are different.

[0067] Another advantage of forming the photoluminescent blocks 32 and the transparent blocks 34 after the display pixels 12 have been placed on the panel 30 is that the photoluminescent blocks 32 are not exposed to high temperatures which may be present in particular when fixing the display pixels 32 to the panel 30.

[0068] Another advantage of forming the photoluminescent blocks 32 and the transparent blocks 34 after the display pixels 12 have been placed on the panel 30 is that it is not necessary to provide protection for the photoluminescent blocks 32 which would be necessary if the photoluminescent blocks 32 were formed before the display pixels 12 are separated or before the display pixels 12 are placed on the panel 30.

[0069] [Fig.9] is a partial and schematic side sectional view of the structure obtained after a step of forming a protective film 36 on all of the display pixels 12 and on the panel 30 between the display pixels 12. According to one embodiment, the protective film 36 is impervious to water and oxygen. According to one embodiment, the protective film 36 is deposited by lamination. The display screen 40 is thus obtained. According to one embodiment, the protective film 36 covers the upper face and the lateral flanks of each pixel 12 and is in direct physical contact with the upper face and the lateral flanks of each pixel 12.

[0070] The protective film 36 is transparent to the radiation emitted by the photoluminescent blocks 32 and / or the light-emitting diodes. The protective film 36 may be made of an inorganic material transparent to the radiation emitted by the photoluminescent blocks and / or the light-emitting diodes. For example, the inorganic material is chosen from the group comprising silicon oxides, of the SiOx type where x is a real number between 1 and 2 or SiOyNz where y and z are real numbers between 0 and 1, titanium oxide, aluminum oxides, for example Al2O3, and mixtures of these compounds. The protective film 36 may be made of an organic material that is at least partially transparent. For example, the protective film 36 is a silicone polymer, an epoxy polymer, an acrylic polymer or a polycarbonate. The protective film 36 may have a single-layer or multi-layer structure, and may comprise, for example, a stack of organic and / or inorganic layers. According to one embodiment, the thickness of the protective film 36 is between 10 nm and 1 mm. The protective film 36 may have a multi-layer structure with organic and / or inorganic layers.

[0071] [Fig. 10] is a partial and schematic side sectional view illustrating an embodiment of a pick and place type method for transferring display pixels 12. The display pixels 12 obtained after the step of cutting the plate 10 described previously in relation to [Fig. 4] are individually manipulated one after the other to be placed at desired locations on the slab 30, not shown in [Fig. 10], for example using a gripper 42.

[0072] [Fig. 11] is a partial and schematic side sectional view illustrating an embodiment of a method for transferring display pixels 12 of the mass transfer type. Several display pixels 12 are gripped simultaneously by a gripper 44, for example an elastomer pad, to be placed on the slab 30, not shown in [Fig. 11].

[0073] According to one embodiment, the manipulation of the display pixels 12 comprises the exertion of a mechanical force on the walls 22 and / or on the temporary blocks 26 of the display pixel 12. The presence of the temporary blocks 26 advantageously makes it possible to obtain a display pixel 12 having a substantially flat upper face 27, which facilitates the use of a gripper. However, as a variant, the temporary blocks 26 may not be present. The manipulation of the display pixels 12 may then comprise the exertion of a mechanical force only on the walls 22 of the display pixel 12.

[0074] According to one embodiment, attaching the display pixel 12 to the gripper 42 or the display pixels 12 to the gripper 44 may comprise exerting pressure from the gripper 42 on the display pixel 12 or from the gripper 44 on the display pixels 12, possibly while maintaining the gripper 42 or 44 within a given temperature range and / or exposing the gripper 42 or 44 to a given radiation. According to one embodiment, separating the display pixel 12 from the gripper 42 or the display pixels 12 from the gripper 44 may comprise exerting traction on the gripper 42 or 44, possibly while maintaining the gripper 42 or 44 within a given temperature range and / or exposing the gripper 42 or 44 to a given radiation.

[0075] [Fig. 12] is a partial, schematic side sectional view illustrating one embodiment of a method for forming the photoluminescent blocks 32 and the transparent blocks 34 by inkjet printing. According to one embodiment, a head printing 46 of an inkjet printer is moved until it comes into line with each cavity 24 intended to contain a photoluminescent block 32 so as to eject a drop 48 or drops of the final filling material into the cavity 24 to fill the cavity 24 with the final filling material.

[0076] [Fig. 13] is a view similar to [Fig. 6] illustrating a configuration in which at least some of the display pixels 12 are arranged on the slab 30 at a position and / or in an orientation which are not exactly the desired ideal position and / or orientation. Advantageously, the methods for filling the cavities 24 are adapted to compensate for deviations between the actual position and / or orientation of the display pixel 12 and the desired ideal position and / or orientation. By way of example, an inkjet printer comprises a guidance system configured to adjust the position of the print head 46 to take into account a deviation between the actual position and / or orientation of the display pixel 12 and the desired ideal position and / or orientation of the display pixel 12 so that the drop 48 or drops are ejected correctly into the cavity 24.

[0077] An advantage of forming the walls 22 before the step of transferring the display pixel circuits onto the panel 30 is that this makes it easier to produce the walls 22 by manufacturing steps including photolithography steps because the display pixels 12 have not yet undergone transfer and are therefore correctly aligned on the plate 10. Indeed, the transfer induces potential offset or positioning rotation defects which make the implementation of photolithography steps to form the walls 22 impossible, complex or imprecise because they must take into account multiple degrees of error. For example, the production of a mask to produce the walls 22 after the transfer will have to take into account all of the errors that can be seen in the example of [Fig.13] and the design of the display pixels 12 will have to be reviewed as a whole to be able to adapt, obviously requiring for the same useful emissive surface, larger display pixels and a greater quantity of material to form the walls.

[0078] According to one embodiment, each display pixel 12 comprises at least one light-emitting diode. According to one embodiment, each display pixel 12 comprises light-emitting diodes formed from three-dimensional elements of nanometric or micrometric size, in particular microwires, nanowires or pyramids.

[0079] The term "microwire" or "nanowire" designates a three-dimensional structure of elongated shape in a preferred direction of which at least two dimensions, called minor dimensions, are between 5 nm and 5 pm, preferably between 100 nm and 2 pm, more preferably between 200 nm and 1.5 pm, the third dimension, called major dimension or height, being greater than or equal to 1 time, preferably su greater than or equal to 3 times and even more preferably greater than or equal to 5 times, the largest of the minor dimensions. In certain embodiments, the height of each microwire or nanowire may be greater than or equal to 500 nm, preferably between 1 pm and 50 pm. In the remainder of the description, the term "wire" is used to mean "microwire or nanowire".

[0080] The cross-section of the wires may have different shapes, for example, an oval, circular or polygonal shape, including triangular, rectangular, square or hexagonal. It will be understood that the term "average diameter" used in relation to a cross-section of a wire designates a quantity associated with the area of ​​the wire in this cross-section, corresponding, for example, to the diameter of the disc having the same area as the cross-section of the wire.

[0081] In the remainder of the description, the term pyramid designates a three-dimensional structure, part of which is pyramidal or elongated conical in shape. This pyramidal structure may be truncated, that is to say that the top of the cone is absent, leaving a plateau. The base of the pyramid is inscribed in a square whose side dimensions are from 100 nm to 10 pm, preferably between 0.2 pm and 2 pm. The polygon forming the base of the pyramid may be a hexagon. The height of the pyramid between the base of the pyramid and the apex or the summit plateau varies from 100 nm to 20 pm, preferably between 200 nm and 2 pm.

[0082] In the remainder of the description, embodiments will be described in the case of a display pixel 12 with light-emitting diodes comprising microwires or nanowires. However, it is clear that these embodiments may relate to a display pixel with light-emitting diodes comprising pyramids of micrometric or nanometric size.

[0083] The wires comprise in majority, preferably more than 60% by mass, more preferably more than 80% by mass, at least one semiconductor material. The semiconductor material may be silicon, germanium, silicon carbide, an IILV compound, an ILVI compound or a combination of at least two of these compounds.

[0084] Examples of Group III elements include gallium (Ga), indium (In) or aluminum (Al). Examples of IILN compounds are GaN, AIN, InN, InGaN, AlGaN or AlInGaN. Other Group V elements may also be used, for example, phosphorus or arsenic. Generally, the elements in the IILV compound may be combined with different mole fractions. Examples of Group II elements include Group IIA elements, including beryllium (Be) and magnesium (Mg) and Group IIB elements, including zinc (Zn), cadmium (Cd) and mercury (Hg). Examples of Group VI elements include Group VIA elements, including oxygen (O) and tellurium (Te). Examples of II-VI compounds are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe or HgTe. Generally, the elements in the II-VI compound can be combined with different mole fractions. The semiconductor material of the wires can have a dopant, for example silicon providing N-type doping of a III-N compound, or magnesium providing P-type doping of a III-N compound.

[0085] [Fig.l]4 is a partial and schematic sectional view of a more detailed embodiment of the display pixel 12 in the case of a display pixel 12 with nanowire or microwire light-emitting diodes. The display pixel 12 comprises from bottom to top in [Fig.l]4: - a substrate 60 comprising opposite faces 62 and 64, the upper face 62 preferably being flat at least at the level of the light-emitting diodes; - a germination layer 66 made of a material promoting the growth of threads and arranged on the face 62; - an insulating layer 68 covering the seed layer 66 and comprising openings 72 exposing portions of the seed layer 66; - LED light-emitting diodes (four LEDs being shown), each LED light-emitting diode being in contact with the seed layer 66 through one of the openings 72; - an insulating layer 74 extending over the lateral sides of a lower portion of each light-emitting diode LED and extending over the insulating layer 68 between the light-emitting diodes LED; - a layer 76 forming an electrode covering each light-emitting diode LED and further extending over the insulating layer 74 between the light-emitting diodes LED; - a conductive and reflective layer 78, extending over the layer 76 between the light-emitting diodes LED, the conductive layer 78 being able, as a variant, to be interposed between the electrode layer 76 and the insulating layer 74 between the light-emitting diodes LED; - a dielectric protection layer 80 extending over layers 76 and 78; - the photoluminescent blocks 32 covering certain sets of light-emitting diodes, a single photoluminescent block 32 being shown as an example in [Fig.l]4; - the transparent blocks 34 to the radiation emitted by the light-emitting diodes and covering other sets of light-emitting diodes, the transparent blocks 34 possibly not being present, a single transparent block 34 being shown as an example in [Fig.l]4; and - the walls 22 around the blocks 32, 34, each wall 22 here comprising a core 82 surrounded by a reflective 84 coating.

[0086] [Fig. 15] represents an embodiment of the LED light-emitting diodes in which each LED light-emitting diode comprises a wire 110 in contact with the seed layer 66 through one of the openings 72 and a shell 112 comprising a stack of semiconductor layers covering the side walls and the top of the wire 110. Such a configuration is called radial. The assembly formed by each wire 110 and the associated shell 112 constitutes the LED light-emitting diode. According to another embodiment, the seed layer 66 can be replaced by seed pads, for example formed at the bottom of the openings 72.

[0087] The shell 112 may comprise a stack of several layers including in particular an active layer 116 and a bonding layer 118. The active layer 116 is the layer from which the majority, preferably all, of the radiation provided by the light-emitting diode LED is emitted. According to one example, the active layer 116 may comprise confinement means, such as a single quantum well or multiple quantum wells. The bonding layer 118 may comprise a stack of semiconductor layers of the same IILV material as the wire 110 but of the opposite conductivity type to the wire 110.

[0088] [Fig. 16] shows another embodiment of the LED light-emitting diodes. The LED light-emitting diode shown in [Fig. 16] comprises all of the elements of the LED light-emitting diode shown in [Fig. 15] except that the shell 112 is only present at the top of the wire 110. Such a configuration is called axial.

[0089] The formation of the LED light-emitting diodes, i.e. the growth of the wires 110 in the openings 72, and the formation of the shells 112 covering the wires 110 can be carried out for example by organometallic chemical vapor deposition (MOCVD) or any other suitable method.

[0090] The substrate 60 may correspond to a single-piece structure or correspond to a layer covering a support made of another material. The substrate 60 is preferably a semiconductor substrate, for example a substrate made of silicon, germanium, silicon carbide, an IILV compound, such as GaN or GaAs, or a ZnO substrate. Preferably, the substrate 60 is a monocrystalline silicon substrate. The substrate 60 may correspond to a multilayer structure of the silicon-on-insulator type, also called SOI (English acronym for Silicon On Insulator).

[0091] The seed layer 66 is made of a material that promotes the growth of the threads. For example, the material composing the seed layer 66 may be a nitride, a carbide or a boride of a transition metal from column IV, V or VI of the periodic table of elements or a combination of these compounds. According to another embodiment, the seed layer 66 may not be present.

[0092] Each insulating layer 68, 70, 74, 80 may be made of a dielectric material, for example silicon oxide (SiO2), silicon nitride (SixNy, where x is approximately equal to 3 and y is approximately equal to 4, for example Si3N4), silicon oxynitride (in particular of general formula SiOxNy, for example Si2ON2), aluminum oxide (A12O3), hafnium oxide (HfO2), titanium dioxide (TiO2) or diamond. Each insulating layer 68, 70, 74, 80 may have a single-layer structure or correspond to a stack of two layers or more than two layers.

[0093] The electrode layer 76 is adapted to allow the electromagnetic radiation emitted by the light-emitting diodes to pass through. The material forming the electrode layer 76 may be a transparent and conductive material such as indium-tin oxide (or ITO, acronym for Indium Tin Oxide), or zinc oxide doped with aluminum or gallium. The thickness of the electrode layer 76 may be between 0.01 μm and 1 μm.

[0094] The conductive layer 78 preferably corresponds to a metal layer, for example made of aluminum, silver, copper, gold or zinc. The thickness of the conductive layer 78 may be between 0.01 μm and 10 μm.

[0095] [Fig. 17] shows another embodiment of the LED light emitting diodes. The LED light emitting diode shown in [Fig. 17] has a two-dimensional structure in that it is manufactured by forming a stack of substantially planar semiconductor layers on the substrate 60 followed by delineating the light emitting diode, for example by etching trenches in the stack of semiconductor layers. The light emitting diode shown in [Fig. 17] comprises a semiconductor layer 120 doped with a first conductivity type, covered with an active layer 122, itself covered with a semiconductor layer 124 doped with a second conductivity type.

[0096] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art.

[0097] Finally, the practical implementation of the embodiments and variants described is within the reach of those skilled in the art from the functional indications given above.

Claims

Claims

1. A method of manufacturing an optoelectronic device (40) comprising the following steps, in order: a) manufacturing display pixel circuits (12) each comprising an emission face (18), and on said face (18), walls (22) delimiting at least one cavity (24); b) fixing said display pixel circuits (12) to a support (30); and c) filling said at least one cavity (24) of each display pixel circuit (12) with a first filling material to form a first color conversion module (32).

2. The method of claim 1, wherein said first filler material comprises quantum dots.

3. A method according to claim 1 or 2, comprising, after step c), the step of forming a protective film (36) completely covering each display pixel circuit (12) and said support (30) between said display pixel circuits (12).

4. A method according to any one of claims 1 to 3, wherein step a) comprises forming a plurality of said display pixel circuits (12) on a plate (10) and cutting said plate (10) to separate said display pixel circuits (12).

5. A method according to claim 4, wherein, in step a), the formation of said walls (22) comprises photolithography steps.

6. A method according to claim 4 or 5, comprising, in step a), filling said cavities (24) with a second filling material and, after step b) and before step c), removing said second filling material from said cavities (24).

7. A method according to any one of claims 1 to 6, wherein, in step c), the filling of said at least one cavity (24) of each display pixel circuit (12) with said first filling material is carried out by inkjet printing, by aerosol jet printing, or by extrusion printing.

8. A method according to any one of claims 1 to 7, wherein, in step a), said walls (22) define at least three cavities (24) for each display pixel circuit (12).

9. A method according to any one of claims 1 to 8, wherein said walls (22) define at least two cavities (24) for each display pixel circuit (12), and wherein step c) comprises:

10.

11.

12.

13.

14. filling at least one of the cavities (24) of each display pixel circuit (12) with a third filling material, different from said first filling material, to form a second color conversion module (32) in said cavity (24). A method according to any one of claims 1 to 9, wherein the ratio of height to thickness of said walls (22) is in the range of 0.5 to 50. A method according to any one of claims 1 to 10, comprising, in step a), forming light emitting diodes (LEDs) for each display pixel circuit (12). A method according to any one of claims 1 to 10, wherein said support (30) comprises a slab provided with electrical connection tracks, the method comprising, in step b), transferring said display pixel circuits (12) onto said slab (30), said display pixel circuits (12) being fixed to said electrical connection tracks, the pitch between said display pixel circuits (12) on said slab (30) being different from the pitch between said display pixel circuits (12) on said plate (10). A method according to any one of claims 1 to 12, wherein said optoelectronic device (40) is a display screen. Display screen (40) obtained by the manufacturing method according to any one of claims 1 to 13.

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