depth pixel with switchable integration capability

Abstract

Image acquisition device provided with a set of depth pixels, each depth pixel comprising a reading circuit associated with a photo-detector (PD), the reading circuit being provided with a switching circuit (120) configured to: - adopt a first configuration so as to couple a first electrode (101a) of an integration capacitor (Ca) to a first reading node (NL1) and a second electrode (102a) of the integration capacitor (Ca) to a detection node (ND), then, - adopt a second configuration so as to couple the first electrode (101a) of the integration capacitor (Ca) to the detection node (ND) and the second electrode (102a) of the integration capacitor (CINT1) to the reading node (NL). Figure for the abstract: 6B.

Description

Title of the invention: Depth pixel with switchable integration capability Technical field

[0001] The present application relates to the field of reading circuits for devices for acquiring depth images of a scene and more particularly those associated with non-pinched photodiodes. PREVIOUS ART

[0002] Image acquisition systems capable of acquiring depth information, for example such as systems using indirect time of flight (iTOF) detectors, are known.

[0003] An iTOF system generally comprises a circuit that drives a light source, for example a light-emitting diode (LED), which emits a light signal at a wavelength, for example in the near-infrared spectrum, towards a scene. The light of a light signal reflected from this scene is captured by an image acquisition device. The image acquisition device also comprises pixels capable of receiving the light signal reflected by the image scene and detecting the phase of the received signal to form a depth image. These pixels are hereinafter referred to as “depth pixels”. A series of acquisitions with a certain phase shift relative to the emitted light and the light amplitude received at each instant is stored in dedicated storage elements.

[0004] A digital system determines, on the basis of periodically amplitude-modulated signals captured by the depth pixels of the image acquisition device, the corresponding distances of the objects in the image scene.

[0005] [Fig.l] is a graph representing, by a curve 3, an example of evolution, as a function of time, of the luminous intensity of a luminous signal emitted by a light-emitting diode towards an image scene, and, by a curve 5, an example of evolution, as a function of time, of a luminous intensity of a luminous signal received by one of the depth pixels of an image acquisition device.

[0006] Depth pixels are based on photo-detectors used to detect the phase of the received light signal.

[0007] There is a phase shift A0 between the emitted light signal and the received light signal, which represents the time of flight of the light signal from the light-emitting diode to the image acquisition device via an object in the image scene which reflects the light signal.

[0008] An estimate of the distance d to the object in the image scene can be calculated using the equation: c ..Up 2 / 2z<

[0009] where c denotes the speed of light, f the frequency of the light signal.

[0010] The phase shift A0 can be estimated on the basis of sampling the signal captured by one or more depth pixels during at least three windows also called distinct sampling phases, preferably during four distinct windows or sampling phases, during each period of the light signal.

[0011] An integration over a large number of periods, in particular greater than 10,000, is typically carried out. Each window or sampling phase has, for example, a duration of up to a quarter of the period of the light signal. These sampling phases typically each have the same duration and the four sampling phases have a total cycle time equal to the period of the light signal.

[0012] The charge samples are stored in storage elements, for example in the form of capacitors.

[0013] Based on integrated samples ECO, EC1, EC2 of the light signal, and for a sinusoidal light wave, the phase shift A0 of the light signal can, in a particular case of using 3 storage elements, be given by the following formula:

[0014] A0=arctan ^(EC2-EC1) / [(ECO-EC1)+(ECO-EC2)].

[0015] A technique based on the detection of four samples ECO, EC1, EC2, and EC3 according to four phases C0, Cl, C2, and C3 per period is described in more detail in the publication by R. Lange and P. Seitz entitled "Solid-state TOF range camera", IEEE J. on Quantum Electronics, vol. 37, No.3, Tuesday 2001.

[0016] It is thus possible to organize the detection differently by using 4 storage elements. In this case, the phase shift is given by the following formula:

[0017] A0=arctan [(EC3-EC1) / (ECO-EC2)].

[0018] To determine the phase shift A0 between the emitted light signal and the received light signal, the received light signal is sampled by transferring, successively and at regular intervals, photo-generated charges into a photodetector during a first sampling phase C0, photo-generated charges into the same photodetector or into another photodetector during a second sampling phase C1 following the first phase, photo-generated charges during a third sampling phase C2 following the second phase, and photo-generated charges during a fourth sampling window C3 following the third phase. This sequence of four sampling phases is repeated one a significant number of times, for example 100,000 times during a so-called "integration" period before the obtained signals are read by an output circuit.

[0019] When a photodiode is pinched and has a completely depleted and charge-free area, this area appears as a potential well which makes it possible to retain a certain number of charges, typically between several tens and several thousands depending on the characteristics of the diode while waiting for their transfer carried out by means of transfer gates.

[0020] Pinned photodiode depth pixels having transfer gates and several storage elements per pixel are known.

[0021] The use of pinched diodes for a depth pixel is desired but is not always possible.

[0022] For example, in the case of an IILV material such as InGaAs, particularly suited to infrared and therefore to the wavelengths commonly used for iTOF measurements, the implementation of a pinched photodiode is difficult.

[0023] However, maintaining the polarization of a photodiode is all the more critical when the photodiode is of the non-pinched type. This polarization must preferably be kept constant at the desired value, in order to maintain good performance in terms of gain and to minimize the dark current.

[0024] To polarize appropriately and allow a fixed polarization to be maintained on the photodetector, a cascode-type structure may be considered in the reading circuit. Such a structure is typically formed by a transistor whose source is connected to the photodetector. However, it is unsuitable for certain applications, in particular those requiring high operating frequencies, for example greater than 100 MHz. Active cascode reading circuits are known, but their bandwidth remains limited and it remains difficult to obtain a good compromise between consumption and detection accuracy with such circuits. Other structures participating in maintaining the polarization are known.

[0025] French patent application No. 2208374 filed on 08 / 18 / 2022 with the National Institute of Industrial Property (INPI) provides a reading circuit responding to such a problem.

[0026] It is sought to improve such a reading circuit, in particular in terms of current dynamics and / or signal-to-noise ratio and / or to allow simplification of the digital processing required downstream. Statement of the invention

[0027] The present invention provides, according to one aspect, a device for acquiring depth images of a scene by detecting a reflected light signal corresponding to the reflection on the scene of an incident light signal, in particular in the near infrared, the acquisition device being provided with a set of depth pixels, each depth pixel of the set comprising a reading circuit associated with a photo-detector, the reading circuit comprising a detection node to which the photo-detector is connected, the reading circuit being provided with:

[0028] - of a storage element comprising a configured integration capacity to acquire charge samples from the photodetector during sampling phases carried out during an integration period comprising repeated sequences of successive charge sampling phases,

[0029] - at least one amplifier stage comprising at input, the detection node coupled to the photo-detector and at the output, a reading node capable of being coupled to an external reading device and common to the set of depth pixels,

[0030] at least a first pixel of said set of depth pixels being further provided with a switching circuit comprising switch elements and configured to:

[0031] - during sampling phases of the integration capacity of the first pixel adopting a first configuration so as to couple a first electrode of the integration capacitor to the first reading node and a second electrode of the integration capacitor to the detection node, then,

[0032] - during other sampling phases of the integration capacity of the first pixel adopting a second configuration so as to couple the first electrode of the integration capacitor to the detection node and the second electrode of the integration capacitor to the reading node,

[0033] or

[0034] - during sampling phases of the capacity adopt a first configuration so as to couple a first electrode of the integration capacitor to the reading node and a second electrode of the integration capacitor to the detection node, then,

[0035] - during other sampling phases of the capacity adopt a second configuration so as to couple the first electrode of the integration capacitor to the detection node and the second electrode of the integration capacitor to a second reading node at the output of a second amplifier stage of the reading circuit, the second amplifier stage comprising at the input, the detection node and at the output the second reading node, the second reading node also being able to be coupled to the external reading device.

[0036] Thus, either a capacity reversal is carried out in an amplification branch, or an exchange of capacities between amplification branches to, in both cases, gain in signal-to-noise ratio.

[0037] According to a preferred embodiment, the photodetector is a non-pinched photodiode. This non-pinched photodiode may in particular be based on a III-V material. This III-V material may advantageously be InGaAs.

[0038] According to a first embodiment, the integration capacitor is a first integration capacitor and the amplifier stage is a first amplifier stage, the reading circuit further comprising:

[0039] - a second integration capacity,

[0040] - a second amplifier stage, the second amplifier stage comprising in input, the detection node coupled to the photodetector and at the output, the second reading node.

[0041] In this case, advantageously, in the first configuration, the first electrode of the first integration capacitor can be coupled to the first reading node and the second electrode of the integration capacitor coupled to the detection node, and in the second configuration the first electrode of the first integration capacitor can be coupled to the detection node and the second electrode of the first integration capacitor is coupled to the first reading node,

[0042] the switching circuit being configured to:

[0043] - during sampling phases of the second integration capacity, couple a first electrode of the second integration capacitance to the second reading node and a second electrode of the second integration capacitance to the detection node, then

[0044] - during other sampling phases of the second integration capacity, coupling the first electrode of the second integrating capacitor to the sense node and the second electrode of the second integrating capacitor to the second read node.

[0045] Advantageously, the repeated sequences of successive sampling phases comprise a repetition of a first sampling sequence followed by a repetition of a second sampling sequence, each of the first sequence and second sequence comprising a first sampling phase, a second sampling phase, a third sampling phase, and a fourth sampling phase, the first sampling phase of the first sequence and the third sampling phase of the first sequence being carried out respectively, by the first integration capacitor of the first pixel and by the second integration capacitor of the first pixel, the first sampling phase of the second sequence and the third sampling phase of the second sequence being carried out respectively by the first integration capacitor of the first pixel and by the second integration capacitor of the first pixel,

[0046] the second sampling phase and the fourth sampling phase of the first sequence and the second sequence being carried out by at least one reading circuit of at least one other depth pixel of said set.

[0047] According to a second embodiment, the reading circuit is provided with a single integration capacitance and the sampling phases are sampling phases of this single integration capacitance during which the first electrode of this integration capacitance is coupled to the reading node and the second electrode of this integration capacitance is coupled to the detection node, the other sampling phases being sampling phases during which the first electrode of the integration capacitance is coupled to the detection node and the second electrode of the integration capacitance is coupled to the reading node.

[0048] Advantageously, according to a particular aspect of this second embodiment, the repeated sequences of successive sampling phases may comprise a repetition of a first sampling sequence then a repetition of a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase, a second sampling phase, a third sampling phase, and a fourth sampling phase, the first sampling phase, the second sampling phase, third sampling phase, the fourth sampling phase having equal durations, the first sampling phase and the second sampling phase of the first sequence being carried out by the first pixel in the first configuration of the switching circuit,the third sampling phase and the fourth sampling phase of the second sequence being carried out by the first pixel in the first configuration of the switching circuit, the third sampling phase and the fourth sampling phase of the first sequence, the first sampling phase and the second sampling phase of the second being carried out by at least one reading circuit of at least one other pixel of depth of said set.

[0049] Alternatively, the repeated sequences of successive sampling phases may comprise a repetition of a first sampling sequence then a repetition of a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase, a second sampling phase, a third sampling phase, and a fourth sampling phase, the first sampling phase, the second sampling phase, the third sampling phase, the fourth sampling phase having equal durations,

[0050] the first sampling phase of the first sequence being carried out by the first pixel,

[0051] the third sampling phase of the second sequence being carried out by the first pixel,

[0052] the second sampling phase, the third sampling phase and the fourth sampling phase of the first sequence, the first sampling phase, the second sampling phase and the fourth sampling phase of the second sequence being carried out by at least one circuit for reading at least one other depth pixel of said set.

[0053] Advantageously, the reading circuit of the first pixel further comprises a polarization reset block used for polarization of the photo-detector, with a repolarization switch configured to, during polarization reset phases of said photo-detector, couple the polarization reset block to the photo-detector so as to apply a polarization potential to it, and to decouple the photo-detector from the polarization reset block during sampling phases performed by the first pixel.

[0054] Advantageously, the switching circuit can comprise: - a first switch element between a first electrode of the integration capacitor and the reading node; - a second switch element between a second electrode of the integration capacitor and the detection node; - a third switching element between the second electrode of the integration capacitor and the detection node; - a fourth switching element between the first electrode of the first capacitor and the reading node.

[0055] According to a third embodiment, the integration capacitor is a first integration capacitor and the amplifier stage is a first amplifier stage, the reading circuit further comprising:

[0056] - a second integration capacity,

[0057] - a second amplifier stage, the second amplifier stage comprising in input, the detection node coupled to the photodetector and at output, the second reading node, during the sampling phases, the first electrode of the first integration capacitor being coupled to the first reading node and the second electrode of the first integration capacitor is coupled to the detection node, and during the other sampling phases, the first electrode of the first integration capacitor being coupled to the detection node and the second electrode of the first integration capacitor to the first reading node,

[0058] the switching circuit being configured to:

[0059] - during sampling phases of the second integration capacity, couple a first electrode of the second integration capacitance to the second reading node and a second electrode of the second integration capacitance to the detection node, then

[0060] - during other sampling phases of the second integration capacity, coupling the first electrode of the second integrating capacitor to the sense node and the second electrode of the second integrating capacitor to the second read node.

[0061] Advantageously, the repeated sequences of successive sampling phases comprise a first sampling sequence then a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase, a second sampling phase, a third sampling phase, and a fourth sampling phase, the first sampling phase, the second sampling phase, the third sampling phase, the fourth sampling phase having equal durations,

[0062] the first sampling phase and the second sampling phase of the first sequence being carried out by the capacitance of the first pixel, the third sampling phase and the fourth sampling phase of the first sequence being carried out by the second capacitance of the first pixel.

[0063] According to a particular embodiment, the second sampling phase and the third sampling phase of the first sequence can be carried out by the capacitance of the second pixel, the fourth sampling phase and the first sampling phase of the second sequence being carried out by the second capacitance of the second pixel.

[0064] The switching circuit may comprise:

[0065] - a switch element between the first electrode of the first capacitor and the first read node;

[0066] - a switch element between the second electrode of the first capacitor and the detection node;

[0067] - a switch element between the first electrode of the second capacitor and the first read node;

[0068] - a switch element between the second electrode of the second capacitor and the detection node;

[0069] - a switch element between the first electrode of the first capacitor and the detection node;

[0070] - a switch element between the second electrode of the first capacitor and the second reading node;

[0071] - a switch element between the first electrode of the second capacitor and the detection node;

[0072] - a switch element between the second electrode of the second capacitor and the first read node.

[0073] Advantageously, the amplifier stage is formed:

[0074] - a first transistor provided with a gate connected to the photo-detector and a electrode, in particular a drain electrode, connected to the read node

[0075] - of a second transistor mounted as a current source and having an electrode common with the first transistor.

[0076] The depth pixels may have a matrix arrangement, the device further comprising an external bias block common to the depth pixels of the same row, in particular a horizontal row or a line of depth pixels, the external bias block comprising a circuit portion mounted in current mirror with said second transistor.

[0077] Advantageously, the reading circuit may further be provided with a reset switch in parallel with the feedback branch, designed to, when closed, reset the integration capacity prior to the integration period, said reset switch being open during the integration period. Brief description of the drawings

[0078] The present invention will be better understood on reading the description of exemplary embodiments given, for purely indicative and non-limiting purposes, with reference to the appended drawings in which:

[0079] [Fig-1] serves, by means of examples of signals respectively transmitted and received, to illustrate a sequence of several sampling phases implemented repeatedly within an iTOF system during an integration period.

[0080] [Fig.2] illustrates a first reading circuit according to the invention of a depth pixel provided with integration capacities with a switching circuit making it possible to switch, from one phase to another, the connections of each of its integration capacities.

[0081] [Fig.3] illustrates a mode of operation of the first circuit during successive sampling phases.

[0082] [Fig.4] illustrates another mode of operation of a depth image acquisition device during which, during an integration period, two depth pixels simultaneously carry out sampling phases while other sampling phases are carried out exclusively by the first pixel or by the second pixel.

[0083] [Fig.5A]

[0084] [Fig.5B] illustrate different configurations of the switching circuit of a second reading circuit according to the invention of a depth pixel and in which this time it is possible to swap the amplification stages with which the integration capacities are associated.

[0085] [Fig.6A]

[0086] [Fig.6B] illustrate a third reading circuit according to the invention of a depth pixel provided with a single storage element and a switching circuit making it possible to switch the electrodes of its integration capacitor relative to the amplification stage with which this capacitor is associated.

[0087] [Fig.7] illustrates a first mode of operation of the third circuit during successive sampling sequences.

[0088] [Fig.8] illustrates a second mode of operation of the third circuit during successive sampling sequences.

[0089] Identical, similar or equivalent parts of the different figures bear the same numerical references so as to facilitate the transition from one figure to another.

[0090] The different parts represented in the figures are not necessarily on a uniform scale, in order to make the figures more readable.

[0091] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

[0092] Reference is now made to [Fig.2] in which an electronic diagram of an example of an image sensor depth pixel Pi configured to acquire depth images of a scene is given.

[0093] The pixel Pi comprises a photodetector PD such as a photodiode, in particular a non-pinched photodiode. The pixel Pi is part of a set of pixels of the sensor, typically arranged in a matrix and preferably having a constitution identical to that of the pixel Pp. The photodiode may in particular be based on at least one semiconductor material suitable for operation in the infrared or near infrared range, for example in a range between 700 nm and 1100 nm, in particular a semiconductor of the IILV group such as for example InGaAs or InGaN, or an ILVI material such as for example ZnS. The photodiode here has its cathode connected to a detection node ND and its anode set to a low potential, in particular a reference potential such as the ground GND.

[0094] The photodetector PD is associated and connected to a reading circuit integrated into the pixel P. This reading circuit is here provided with a first storage element provided with a first integration capacitor Ca provided for collecting charges, and in particular for acquiring samples of charges coming from the photodetector PD and photo-generated by detection of a reflected light signal, during so-called “sampling” phases.

[0095] The first integration capacitor Ca is arranged here in a feedback branch between an input and an output of an amplifier stage Al of a capacitive transimpedance amplifier structure CTIA (for “Capacitive Transimpedance Amplifier”). The input of the amplifier stage Al corresponds here to the detection node Nd while the output of the amplifier Al corresponds to a first reading node Nl i, itself coupled to an external reading device DLE (shown schematically in this figure) of the samples, this external reading device DLE being typically shared by a set of pixels of the matrix to which the pixel Pi belongs.

[0096] Such a DLE reading device external to the pixel Pipeut typically comprises a circuit common to pixels of the same column (i.e. vertical row) of pixels and may for example be provided with a correlated double-sampling stage (CDS for “correlated double-sampling”).

[0097] An example of an external DLE reading device is given in French patent application No. 2208374 filed on 08 / 18 / 2022 with the National Institute of Industrial Property (INPI).

[0098] The amplifier stage Al is produced with a reduced number of transistors, here two transistors Mlb, M2b, which makes it possible to limit the size of the reading circuit.

[0099] A first transistor M2b of the amplifier stage Al, in the illustrated example of NMOS type, has a source electrode set to low potential and a drain electrode connected to the integration capacitor Ca as well as to a second transistor M[b, in the illustrated example of PMOS type, forming a current source. For this, the second transistor Mib can be mounted as a current mirror with a circuit portion 210 belonging to an external bias block BPE, which is not part of the reading circuit and is arranged outside the pixel Pp. This circuit portion 210 can be formed of a current source 212 and a transistor Ti whose gate and drain are connected to the gate of the second transistor Mib. The external bias block BPE is typically a circuit located at the edge of the set or matrix of pixels to which the pixel Pi.

[0100] In the particular embodiment illustrated in [Fig. 2], the pixel Pi is further provided with a second storage element provided with a second integration capacitor Cb. In this example, there are thus two integration capacitors Ca,Cb per depth pixel. The second integration capacitor Cb is here provided for acquiring charge samples, in particular charges from the photodetector PD during sampling phases. The second integration capacitor Cb is arranged in a feedback branch between an input and an output of a second amplifier stage A2 of the capacitive amplifier structure CTIA transimpedance (for “Capacitive Transimpedance Amplifier”). The input of the amplifier stage A2 corresponds here to the detection node ND while the output of the amplifier A2 corresponds to a second reading node NL2, itself coupled to the aforementioned external reading device DLE to which the first reading node NLp is also coupled

[0101] This second amplifier stage A2 typically has an arrangement identical to that of the first amplifier stage A1.

[0102] The second amplifier stage A2 is also produced with a reduced number of transistors, here two transistors Mlc, M2c. The second amplifier stage A2 is provided with a transistor M2c, here of the NMOS type, whose gate is coupled to the photo-detector PD. The transistor M2c, in the illustrated example of the NMOS type, has a source electrode set to the reference potential and a drain electrode connected to the integration capacitor Cb and to a second transistor Mlc, in the illustrated example of the PMOS type, forming a current source. For this, the transistor Mlc can be mounted as a current mirror with the same portion of circuit belonging to the same external bias block BPE.

[0103] The reading circuit is here also provided with a first sampling switch 21 arranged between the first integration capacitor Ca and the photodetector PD, and a second sampling switch 31 arranged between the second integration capacitor Cb and the photodetector PD.

[0104] Reset switches 8, 18 are provided in parallel with the capacitor Ca and the capacitor Cb, respectively. These reset switches 8, 18 make it possible to reset the integration capacitors Ca and the capacitor Cb at the start of an integration period during which several repeated sequences of distinct sampling phases C0, Cl, C2, C3 are carried out by one or more storage elements of one or more distinct depth pixels of the image acquisition device.

[0105] This integration period comprises a significant number of repeated sequences of sampling phases, with typically between several hundred and several million sampling phases carried out in order to implement a depth measurement.

[0106] Each sequence typically comprises a succession of sampling phases, for example four phases C0, Ci, C2, C3 preferably of equal durations. Thus, a first sampling phase Co is carried out, a second sampling phase Ci offset from the first sampling phase Co according to a constant offset or phase shift, a third sampling phase C2 offset from the second sampling phase and from the third sampling phase according to a constant shift or phase shift and a fourth sampling phase C3 shifted from the second sampling phase and the third sampling phase according to a constant shift or phase shift.

[0107] A sequence of four sampling phases Co, Ci, C2, C3 is thus typically repeated a given number of times, for example greater than 10,000 and for example between 10,000 and 100,000.

[0108] To ensure that the polarization of the photodetector PD is maintained during the integration period, the pixel Pi is, in this particular embodiment, provided with a polarization reset block 10. A repolarization switch 11 is then put into an on state (i.e. “ON” or closed state) during polarization reset phases noted RAZ, which allows the application of a polarization potential to the detection node ND.

[0109] These polarization reset phases RAZ are here carried out between sampling phases implemented by the first capacitor Ca and / or the second capacitor Cb.

[0110] During sampling phases implemented by the first capacitor Ca, the repolarization switch 11 is put into a blocked state (i.e. “OFF” or open state) to decouple the photo-detector PD from the polarization reset block 10 and the sampling switch 31 is put into a blocked state in order to decouple the photo-detector PD from the second integration capacitor Cb, while the first sampling switch 21, for example formed of at least one transistor, is made conducting (i.e. closed or “ON”) in order to couple the photo-detector PD to the first integration capacitor Ca.

[0111] During sampling phases implemented by the second capacitor Cb, the repolarization switch 11 is put into a blocked state (i.e. “OFF” or open state) to decouple the photo-detector PD from the polarization reset block 10 and the sampling switch 21 is put into a blocked state in order to decouple the photo-detector PD from the first integration capacitor Ca, while the second sampling switch 31, for example formed of at least one transistor, is made conducting (i.e. closed or “ON”) in order to couple the photo-detector PD to the second integration capacitor Cb.

[0112] The repolarization reset block 10 is here formed of a transistor Mla, in the illustrated example of PMOS type, mounted in current mirror with the portion 210 of circuit belonging to the external polarization block BPE.

[0113] The transistor Mla of the bias reset block 10 and the second transistor Mlb of the amplifier stage Al have their gates connected to each other and brought to a potential VG imposed by the external polarization block BPE, their respective sources being brought to a high supply potential, for example VDD.

[0114] The transistor Mla of the bias reset block 10 is coupled to another transistor M2a, in this example of the NMOS type, whose gate and drain are connected. The repolarization switch 11 controlled by a bias reset signal RAZ is here arranged between the gate of the transistor M2c and the detection node ND. During bias reset phases RAZ, the cathode of the photodiode PD is coupled to the gate of the transistor M2a.

[0115] The reading circuit of [Fig.2] has the particularity of being provided with a switching circuit 120 comprising switching elements 111, 112, 113, 114, 116, 117, 118, 119, for example, each formed of one or more transistors.

[0116] A first group of switches 111, 112, 113, 114 is here associated with the first integration capacitor Ca while a second group of switches 116, 117, 118, 119 is here associated with the second integration capacitor Cb.

[0117] The first group of switching elements comprises: - a first switch element 111 between a first electrode 101a of the first capacitor Ca and the first reading node NLi; - a second switch element 112 between a second electrode 102a of the first capacitor Ca and the detection node ND; - a third switching element 113 between the first electrode 101a of the first capacitor Ca and the detection node ND; - a fourth switching element 114 between the second electrode 102a of the first capacitor Ca and the first reading node NLp - The second switch element 112 can be connected to the detection node ND via the sampling switch 21 when this switch 21 is closed (passing). - The third switch element 113 can be connected to the detection node ND via the sampling switch 21 when this switch 21 is closed (passing).

[0118] The second group of switching elements comprises: - a first switch element 116 between a first electrode 101b of the second capacitor Cb and the second reading node NL 2; - a second switch element 117 between a second electrode 102b of the second capacitor Cb and the detection node ND; - a third switch element 118 between the first electrode 101b of the second capacitor Cb and the detection node ND; - a fourth switching element 119 between the second electrode 102b of the second capacitor Cb and the second reading node NL 2.

[0119] The second switch element 117 can be connected to the detection node ND via the sampling switch 31 when this switch 31 is closed (passing).

[0120] The third switch element 118 can be connected to the detection node ND via the sampling switch 31 when this switch 31 is closed (passing).

[0121] The switching circuit 120 is configured to, during at least a first sampling phase performed by the first capacitor Ca, adopt a first configuration, with the first and second switches 111, 112 closed (i.e., passing) while the third and fourth switches 113, 114 are open (i.e., blocked) so as to couple the first electrode 101a of the integration capacitor Ca to the first reading node NLi and the second electrode 102a to the detection node ND, then, during at least a second sampling phase performed by the first capacitor Ca, adopt a second configuration, with the switches 111, 112 open (i.e., blocked) while the switches 113, 114 are closed (i.e., passing) so as to couple the first electrode 101a of the integration capacitor Ca to the detection node ND and the second electrode 102a of the integration capacitor Ca to the detection node ND. NL b reading node

[0122] By “sampling” phase, is meant here and throughout the description a phase during which a capacitor is connected to the detection node by means of its associated sampling switch 21 or 31, in order either to carry out the acquisition of samples of a reflected signal when a light signal is emitted by the acquisition device or to carry out a collection of charges to carry out a calibration or a measurement without a light signal being emitted by the acquisition device.

[0123] Such a capacitance reversal can make it possible to obtain +EC and -EC samples of opposite signs and to compensate for the possible presence of stray light and avoid its storage and thus gain in signal-to-noise ratio. It also helps to avoid saturation of the capacitance and makes it possible to improve the dynamics of the processed current from the PD photodetector.

[0124] With a pixel as described above, it is also possible to carry out sampling phases without an emitted light signal and which are intended to enable the evaluation of an offset due to a shift in properties between the different structures described, in particular the amplifiers and the voltage reference M2a. An offset stored positively during the first sampling phase is therefore subtracted during the second sampling phase.

[0125] The switching circuit is also configured to, during at least a first sampling phase of the second capacitance Cb, adopt a configuration, with the switches 116, 117 closed (i.e., passing) while the switches 118, 119 are open (i.e., blocked) so as to couple the first electrode 101b of the integration capacitance Cb to the second detection node ND and the second electrode 102b to the reading node NL 2, then, during at least a second sampling phase of the second capacitance Cb, adopt another configuration, with the switches 116, 117 open (i.e., blocked) while the switches 118, 119 are closed (i.e., passing) so as to couple the first electrode 101b of the integration capacitance Cb to the reading node NL 2 and the second electrode 102b of the integration capacitance Cb to the detection node ND.

[0126] Similarly, sampling phases can be carried out without an emitted light signal and which are intended to enable the evaluation of an offset stored in the second capacitor Cb.

[0127] Such a switching circuit makes it possible to reverse the polarity, in other words to rotate each capacitor Ca, Cb during the integration period. This makes it possible to compensate for possible defects linked to a possible imbalance between transistors.

[0128] During the RAZ reset phases, the gate voltage of the transistor M2a of the repolarization block serves as a reset potential for the photodiode PD. At the start of the acquisition, for example with the second amplifier A2 and its transistor M2c, an electrical balance is supposed to be established so that the gate potential on this transistor M2c corresponds to the potential of the transistor M2a. Under the effects of possible unwanted differences in properties ("mismatch") between the different transistors, the two gate potentials, that of the transistor M2a and that of the transistor M2c, may be different. This could lead to the possible integration of a parasitic signal. Furthermore, the value of this signal is potentially different when integrating with the second amplifier and its associated transistor M2b, which could tend to degrade the signal-to-noise ratio.This degradation is not identical for all amplifiers and is therefore difficult to compensate for subsequently with a differential structure.

[0129] An alternation of phases as described previously can make it possible to overcome this problem.

[0130] An integration period comprising a repeated succession of k times a first sampling sequence seql then k times a second sampling sequence seq2, is illustrated schematically in [Fig.3] and serves to illustrate a particular mode of operation of the pixel pl reading circuit described previously in connection with [Fig.2] and of a second pixel p2 whose circuit of reading is identical and belongs to the same set of pixels as the first pixel pl. Each of the first sequence Seql and second sequence Seq2 is successively composed of a first sampling phase CO, a second sampling phase Cl, a third sampling phase C2, and a fourth sampling phase C3.

[0131] The first sampling phase CO of the first sequence Seql is carried out by the first integration capacity Ca of the first pixel pl.

[0132] The second sampling phase C1 of the first sequence Seql is then carried out by the second pixel p2. During this second sampling phase C2, a polarization reset phase RAZ of the photodetector PD of the first pixel pl can be carried out.

[0133] Then, the third sampling phase C2 of the first sequence Seql is carried out by the second integration capacity Cb of the first pixel pl.

[0134] Then, the fourth sampling phase C3 of the first sequence Seql is carried out by the second pixel p2. Here again, a polarization reset phase RAZ of the photodetector PD is implemented between the two samples carried out by the same pixel.

[0135] Then, the first sampling phase C0 of the second sequence Seq2 is carried out by the first integration capacity Ca of the first pixel pl.

[0136] The second sampling phase Cl of the second sequence Seq2 is then carried out by the second pixel p2.

[0137] Then, the third sampling phase C2 of the second sequence Seq2 is carried out this time by the second integration capacity Cb of the first pixel pl.

[0138] The fourth sampling phase C3 of the second sequence Seq2 is then carried out by the second pixel p2.

[0139] Thus, between repeating the first sequence seql k times and then the second sequence seq2 k times, each of the capacitors Ca, Cb is rotated to compensate for any possible imbalance between transistors.

[0140] The first sequence seq1, and the second seq2 are each repeated a significant number k during an integration period, for example with k between 5000 and 50000 times.

[0141] In particular to prevent offset measurement phases from causing saturation of the amplifiers, it is possible to alternate offset measurement phases (without light signal) and light signal sampling periods, several times, consecutively and over shorter durations.

[0142] In the embodiment described above, a polarization reset phase RAZ of the photodetector PD is typically provided between two consecutive sampling phases carried out by the same capacitor Ca or Cb.

[0143] Such a reset may prove optional, particularly if the durations of the sampling phases are adapted.

[0144] Rather than chaining sampling phases whose duration corresponds to the collection of a sample, it is possible to plan to carry out sampling over two consecutive periods dedicated to the collection of the sample. It may then be sufficient to carry out a mathematical operation (addition and subtraction) to obtain the desired values ​​making it possible to arrive at a phase shift formula A0 as mentioned previously.

[0145] A series of successive sequences seq' 1, seq' 2 using this principle is given in [Fig. 4] and thus serves to illustrate another mode of operation of reading circuits for a first pixel pl and a second pixel p2. In particular to save space, these circuits can be devoid of polarization reset blocks RAZ of the photodetector PD.

[0146] Each of the first sequence Seq' 1 and second sequence Seq' 2 is successively composed of a first sampling phase CO, a second sampling phase Cl, a third sampling phase C2, and a fourth sampling phase C3.

[0147] The first sampling phase C0 and the second sampling phase Cl of the first sequence Seq' 1 are carried out by an integration capacity Ca or Cb of a first pixel.

[0148] The third sampling phase C2 and the fourth sampling phase C3 of the first sequence Seq' 1 are carried out by the other integration capacitor Cb or Ca of the first pixel, for example the integration capacitor Cb when the first sampling phase and the second phase have been carried out by the integration capacitor Ca.

[0149] During this same first sequence Seq' 1, the second sampling phase and the third sampling phase are carried out by an integration capacitor Ca of a second pixel, the fourth sampling phase of the first sequence Seql and the first sampling phase of the second sequence being carried out by the other integration capacitor Cb of the second pixel.

[0150] Thus, the first pixel makes it possible to collect samples ÎEC0 + EC1I then samples IEC2 + EC3I during the first Seq'1.

[0151] The second pixel allows the collection of IEC1 + EC21 samples during the first Seq' 1 then IEC3 + EC0I samples during the first Seq' 1 then the second sequence Seq'2.

[0152] By practicing the inversion or the reversal of capacities by modifying the connection of the electrodes of each one with respect to the detection node and to the reading node, one can obtain a total of samples TOT1 for the first pixel equal to EC0+EC1- EC2-EC3 at the end of the two sequences Seql, Seq2 and for the second pixel at the end of the first phase CO of the second sequence Seq2 a total TOT2 of samples EC1+EC2-EC3-EC0. By adding these two totals, we obtain TOT1+TOT2 = 2*EC1+2*EC3. By subtracting these two totals, we obtain TOT1-TOT2 = 2*EC1-2*EC3. These operations make it possible to arrive at a phase shift according to a formula as given previously.

[0153] In Figures 5A and 5B, another example of a depth pixel Pi0, capable of adopting an operating mode as described previously in connection with [Fig.4] is given and differs from that described previously in connection with [Fig.2], in that its reading circuit is devoid of a polarization reset block RAZ of the photodetector PD.

[0154] The arrangement of its switching circuit 120' also differs from the switching circuit 120 described previously in connection with [Fig.2].

[0155] The switching circuit 120' here comprises a group of switches 111, 112, associated with the first capacitor Ca with:

[0156] - the first switch element 111 between the first electrode 101a of the first capacity Ca and the first reading node NLi;

[0157] - the second switch element 112 between the second electrode 102a of the first capacity Ca and the detection node ND.

[0158] The circuit 120' also comprises a group of switching elements 117, 116, associated with the second capacitor Cb with: - a switch element 117 between a first electrode 101b of the second capacitor Cb and the detection node ND; - a switch element 116 between a second electrode 102b of the second capacitor Cb and the first reading node NL 2.

[0159] The switching circuit 120' also comprises here:

[0160] - a switch element 121 between the first electrode 101a of the first capacity Ca and the detection node ND;

[0161] - a switch element 122 between the second electrode 102a of the first capacity Ca and the second reading node Nl2;

[0162] - a switch element 123 between the first electrode 101b and the second capacitance Cb and the detection node ND;

[0163] - a switch element 124 between the second electrode 102b of the second capacity Cb and the first reading node NL i.

[0164] A first configuration of the switching circuit 120' is illustrated in [Fig.5A] with a first electrode 101a of the first integration capacitor Ca coupled to the first reading node NLi and a second electrode 102a of the same first integration capacitance Ca coupled to the detection node ND. The first electrode 101b of the second integration capacitance Cb is then coupled to the detection node ND and the second electrode 102b of this second integration capacitance Cb coupled to the second reading node NL 2

[0165] For this, the switches 111, 112, 117, 118 are closed (i.e. passing) while the switches 121, 122, 123, 124 are open (i.e. blocked).

[0166] A second configuration of the switching circuit 120' is illustrated in [Fig.5B] with the first electrode 101a of the first integration capacitor Ca coupled to the first detection node ND and the second electrode 102a of this same first integration capacitor Ca coupled to the second reading node NL 2. The first electrode 101b of the second integration capacitor Cb is then coupled to the detection node ND and the second electrode 102b of this second integration capacitor Cb is coupled to the first reading node NL i.

[0167] To obtain this second configuration, the switches 111, 112, 117, 118 are open (i.e. blocked) while the switches 121, 122, 123, 124 are closed (i.e. passing).

[0168] By alternating between the first configuration and the second configuration, we alternately associate: firstly the capacitors Ca, Cb respectively with the first amplifier Al and with the second amplifier A2, and secondly the capacitors Ca, Cb respectively with the second amplifier A2 and with the first amplifier Al while modifying the polarity of the two capacitors Ca, Cb.

[0169] Such an operating mode makes it possible to compensate for any offset that may exist between the transistor M2b of the first amplifier A1 and the transistor M2c of the second amplifier A2.

[0170] In Figures 6A and 6B, another example of embodiment of a circuit for reading a pixel Pi oo of depth is given and differs from that described previously in connection with [Fig.2], in particular in that it comprises here a single storage element with here a single integration capacitor Ca, which can make it possible to obtain a reduced size.

[0171] The switching circuit 120 here comprises switching elements 111, 112, 113, 114, associated with the single integration capacity Ca with: - a first switch element 111 between a first electrode 101a of the capacitor Ca and the reading node NLi; - a second switch element 112 between a second electrode 102a of the capacitor Ca and the detection node ND; - a third switching element 113 between the second electrode 102a of the first capacitor Ca and the detection node ND; - a fourth switching element 114 between the first electrode 101a of the first capacitor Ca and the reading node NLp

[0172] A first configuration of the switching circuit 120 is illustrated in [Fig.6A], with the first electrode 101a of the first integration capacitor Ca coupled to the first reading node NLi and the second electrode 102a of this same first integration capacitor Ca coupled to the detection node ND. For this, the switches 111, 112 are closed (i.e. passing) while the switches 113, 114 are open (i.e. blocked). The switching circuit 120, here provided with a single integration capacitor Ca, can be put in such a configuration when the reading circuit is in sampling phases by the capacitor Ca.

[0173] A second configuration of the switching circuit 120 is illustrated in [Fig.6B] with the first electrode 101a of the first integration capacitor Ca coupled this time to the detection node ND and the second electrode 102a of this same first integration capacitor Ca coupled to the first reading node NLi. For this, the switches 111, 112 are open (i.e. blocked) while the switches 113, 114 are closed (i.e. passing). The switching circuit 120 provided here with a single integration capacitor Ca can be put in such a configuration when the reading circuit is in other sampling phases by the capacitor Ca.

[0174] Such a circuit making it possible to return the capacity from one integration to another can again make it possible to compensate for offset effects and the acquisition of stray light.

[0175] A first mode of operation of such a pixel Pi00 is given in [Fig.7] and serves to illustrate an integration period during which a repetition of k times a first sequence seql, and k times a second successive sampling sequence seq2 is carried out. The first sequence Seql and the second sequence Seq2 are here again each composed of a first sampling phase C0, a second sampling phase Cl, a third sampling phase C2, and a fourth sampling phase C3.

[0176] The first sampling phase then the second sampling phase of the first sequence Seql are implemented by the same integration capacitor Ca when the switching circuit 120 is in its first configuration and correspond to a collection of samples ECO and EC1.

[0177] A polarization reset RAZ of the photodetector PD of the pixel pl00 can then be carried out during the third sampling phase C2 and / or the fourth sampling phase C3.

[0178] Then, after having carried out k times the first Ofirst sequence Seql, the third sampling phase C2 and the fourth phase C3 of the second sequence Seq2 are implemented by the first integration capacitor Ca of the pixel pl00, correspond to a second sampling phase of the capacitor Ca when the switching circuit 120 is in its second configuration. A polarization reset RAZ of the photodetector PD of the pixel pl00 is then carried out during the first sampling phase CO and the second sampling phase Cl. The first sequence thus makes it possible to obtain a value EC0+EC1, while, after reversal of the capacitor Ca, the second sequence Seq2 makes it possible to obtain the value -EC2-EC3. At the end of these two successive sequences Seql, Seq2, a total EC0+EC1-EC2-EC3 can be obtained. As indicated previously, a sequence of k times the first sequence Seq1, then k times the second sequence Seq2 is implemented with k a high number, for example between 5000 and 50000 times during an integration period.

[0179] Other operating modes of the PiOo pixel can be provided. Thus, another example of integration period is illustrated in [Fig.8], always with a repetition of k times the first sequence seql, then k times the second sequence seq2.

[0180] The first sampling phase C0 of the first sequence Seql is implemented by the first integration capacitor Ca of the pixel plOO and corresponds to a collection of charges by the capacitor Ca when the switching circuit 120 is in its first configuration.

[0181] A polarization reset RAZ of the photodetector PD of the pixel pl00 can then be carried out during the second sampling phase C1, third sampling phase C2 and fourth sampling phase C3.

[0182] The third sampling phase C2 of the second sequence Seq2 is implemented by the first integration capacitor Ca of the pixel pl00 and corresponds to a collection of charges by the capacitor Ca when the switching circuit 120 is in its second configuration. A polarization reset RAZ of the photodetector PD of the pixel pl00 is then carried out during the first sampling phase C0 of the second sampling phase Cl and the fourth sampling phase C2.

[0183] The first sequence thus makes it possible to obtain an ECO value, while, after reversing the capacity Ca, the second sequence Seq2 makes it possible to obtain the value -EC2. At the end of these two sequences Seql, Seq2, a total of samples EC0-EC2 can be obtained, while another pixel makes it possible to obtain EC1-EC3 at the end of these two sequences Seql, Seq2.

Claims

1. Claims Device for acquiring depth images of a scene by detecting a reflected light signal corresponding to the reflection on the scene of an incident light signal, in particular in the near infrared, the acquisition device being provided with a set of depth pixels, each depth pixel of said set comprising a reading circuit associated with a photodetector (PD), the reading circuit comprising a detection node (Nd) to which the photodetector (PD) is connected, the reading circuit being provided with: - a storage element comprising an integration capacitor (Ca) configured to acquire charge samples from the photodetector (PD) during sampling phases carried out during an integration period comprising repeated sequences of successive charge sampling phases, - at least one amplifier stage comprising at the input, said detection node (ND) coupled to the photo-detector (PD) and at the output, a reading node (NL i) capable of being coupled to an external reading device (DLE) and common to said set of depth pixels, at least one first pixel (Pb P10, Pu») of said set of depth pixels being further provided with a switching circuit (120, 120') comprising switch elements (111, 112, 113, 114; 116, 117, 118, 119; 121, 122, 123, 124) and configured to: - during sampling phases of the integration capacitance (Ca) of the first pixel (Pb Pi0, Pioo) adopting a first configuration so as to couple a first electrode (101a) of said integration capacitance (Ca) to the first reading node (NL i) and a second electrode (102a) of the integration capacitance (Ca) to the detection node (ND), then, - during other sampling phases of the integration capacity (Ca) of the first pixel (Pb Pi0, Pwo) adopt a second configuration so as to couple the first electrode (101a) of the integration capacity (Ca) to the detection node (ND) and the second electrode (102a) of the integration capacity (Cinti) to the reading node (NL i), Or - during sampling phases of the capacitance (Ca) adopting a first configuration so as to couple a first electrode (101a) of the integration capacitance (Ca) to the reading node (NLi) and a second electrode (102a) of the integration capacitance (Ca) to the detection node (ND), then, - during other sampling phases of the capacitance (Ca) adopting a second configuration so as to couple the first electrode (101a) of the integration capacitance (C1Nn) to the detection node (ND) and the second electrode (102a) of the integration capacitance (Cinti) to a second reading node (NL2) at the output of a second amplifier stage (A2) of said reading circuit, the second amplifier stage comprising at the input, the detection node (ND) and at the output the second reading node (NL2), said second reading node also being able to be coupled to said external reading device (DLE).

2. Device according to claim 1, wherein said integration capacitor (Ca) is a first integration capacitor and wherein said amplifier stage is a first amplifier stage, the reading circuit further comprising: - a second integration capacitor (Cb), - a second amplifier stage, the second amplifier stage comprising at its input, the detection node (ND) coupled to the photodetector (PD) and at its output, the second reading node (NL 2).

3. Device according to claim 2, wherein, in the first configuration, the first electrode (101a) of the first integration capacitor (Ca) is coupled to the first reading node (NLi) and the second electrode (102a) of the integration capacitor (Ca) is coupled to the detection node (ND), and wherein in the second configuration the first electrode (101a) of the first integration capacitor (Ca) is coupled to the detection node (ND) and the second electrode (102a) of the first integration capacitor (Cinti) is coupled to the first reading node (NL), the switching circuit (120) being configured to: - during sampling phases of the second integration capacitor (Cb) couple a first electrode (101b) of the second integration capacitor (Cb) to the second reading node

4.

5. (Nl 2) and a second electrode (102b) of the second integration capacitor (Cinti) to the detection node (ND), then - during other sampling phases of the second integration capacitor, coupling the first electrode (101b) of the second integration capacitor (C1NTi) to the detection node (ND) and the second electrode (102b) of the second integration capacitor (Cb) to the second reading node (NL 2). Device according to claim 3, wherein the repeated sequences of successive sampling phases comprise a repetition of a first sampling sequence (Seql) followed by a repetition of a second sampling sequence (Seq2), each of said first sequence (Seql) and second sequence (Seq2) comprising a first sampling phase (CO), a second sampling phase (Cl), a third sampling phase (C2), and a fourth sampling phase (C3), the first sampling phase (CO) of the first sequence (Seql) and the third sampling phase (C2) of the first sequence (Seql) being carried out respectively, by the first integration capacitance (Ca) of the first pixel (pl) and by the second integration capacitance (Cb) of the first pixel (pl),the first sampling phase (CO) of the second sequence (Seq2) and the third sampling phase (C2) of the second sequence (Seq2) being carried out respectively by the first integration capacity (Ca) of the first pixel (pl) and by the second integration capacity (Cb) of the first pixel (pl), the second sampling phase (Cl) and the fourth sampling phase (C3) of the first sequence (seql) and of the second sequence being carried out by at least one reading circuit of at least one other pixel (p2) of depth of said set. Device according to claim 1,wherein the reading circuit is provided with a single integration capacitance (Ca) and wherein said sampling phases are sampling phases of the integration capacitance during which the first electrode (101a) of the integration capacitance (Ca) is coupled to the reading node (NLi) and the second electrode (102a) of the integration capacitance (Ca) is coupled to the detection node (ND), said other sampling phases being sampling phases, during which the first electrode (101a) of the integration capacitor (Ca) is coupled to the detection node (ND) and the second electrode (102a) of the integration capacitor (Cjnti) is coupled to the reading node (NL i).

6. A device according to claim 5, wherein the repeated sequences of successive sampling phases comprise a repetition of a first sampling sequence and then a repetition of a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase (CO), a second sampling phase (Cl), a third sampling phase (C2), and a fourth sampling phase (C3), the first sampling phase, the second sampling phase (Cl), third sampling phase (C2), the fourth sampling phase (C3) having equal durations, the first sampling phase (CO) and the second sampling phase (Cl) of the first sequence (Seql) being performed by the first pixel (pioo) in the first configuration of the switching circuit,the third sampling phase (C2) and the fourth sampling phase (C3) of the second sequence (Seq2) being carried out by the first pixel (pioo) in the first configuration of the switching circuit, the third sampling phase (C2) and the fourth sampling phase (C3) of the first sequence (Seql), the first sampling phase (CO) and the second sampling phase (Cl) of the second (Seq2) being carried out by at least one reading circuit of at least one other pixel of depth of said set.,

7. Device according to claim 5, in which the repeated sequences of successive sampling phases comprise a repetition of a first sampling sequence then a repetition of a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase (CO), a second sampling phase (Cl), a third sampling phase (C2), and a fourth sampling phase (C3), the first sampling phase, the second sampling phase (Cl), the third sampling phase (C2), the fourth sampling phase (C3) having equal durations, the first sampling phase (CO) of the first sequence (Seql) being carried out by the first pixel, the third sampling phase (C2) of the second sequence (Seq2) being carried out by the first pixel, the second sampling phase, the third sampling phase (C2) and the fourth sampling phase (C3) of the first sequence (Seql), the first sampling phase (CO), the second sampling phase (Cl) and the fourth sampling phase (C3) of the second sequence being carried out by at least one reading circuit of at least one other pixel of depth of said set.

8. Device according to one of the preceding claims, in which the reading circuit of the first pixel (Pb P100) further comprises a polarization reset block (10) used for polarization of the photo-detector (PD), with a repolarization switch (11) configured to, during polarization reset phases (RAZ) of said photo-detector (PD), couple the polarization reset block (10) to the photo-detector (PD) so as to apply a polarization potential to it, and to decouple the photo-detector from the polarization reset block (10) during the sampling phases carried out by the first pixel.

9. Device according to one of the preceding claims, the switching circuit (120) comprising: - a first switch element (111) between a first electrode (101a) of the integration capacitor (Ca) and the reading node NLi; - a second switch element (112) between a second electrode (102a) of the integration capacitor (Ca) and the detection node (ND); - a third switch element (113) between the second electrode (102a) of the integration capacitor (Ca) and the detection node ND; - a fourth switch element (114) between the first electrode (101a) of the first capacitor (Ca) and the reading node (NLi).

10.

11. Device according to claim 2, wherein during said sampling phases, the first electrode (101a) of the first integration capacitor (Ca) is coupled to the first reading node (NLi) and the second electrode (102a) of the first integration capacitor (Ca) is coupled to the detection node (ND), and wherein during said other sampling phases, the first electrode (101a) of the first integration capacitor (Ca) is coupled to the detection node (ND) and the second electrode (102a) of the first integration capacitor (Cinti) to the first reading node (NLi), the switching circuit (120') being configured to: - during sampling phases of the second integration capacitor couple a first electrode (101b) of the second integration capacitor (Cb) to the second reading node (NL2) and a second electrode (102b) of the second integration capacitor (Cinti) to the detection node (ND),then - during other sampling phases of the second integration capacity, coupling the first electrode (101b) of the second integration capacity (C1NTi) to the detection node (ND) and the second electrode (102b) of the second integration capacity (Cb) to the second reading node (NL2)., Device according to claim 10, in which the repeated sequences of successive sampling phases comprise a first sampling sequence then a second sampling sequence, the first sampling sequence and the second sampling sequence each comprising a succession of a first sampling phase (C0), a second sampling phase (Cl), a third sampling phase (C2), and a fourth sampling phase (C3), the first sampling phase, the second sampling phase (Cl), the third sampling phase (C2), the fourth sampling phase (C3) having equal durations, the first sampling phase (C0) and the second sampling phase (Cl) of the first sequence (Seql) being carried out by the capacitance (Ca) of the first pixel, the third sampling phase (C2) and the fourth sampling phase (C3) of the first sequence (Seql) being carried out by the second capacity (Cb) of the first pixel.

12. Device according to claim 11, the second sampling phase (Cl) and the third sampling phase (C2) of the first sequence being carried out by a capacitance (Ca) of a second pixel, the fourth sampling phase (C3) of the first sequence and the first sampling phase (CO) of the second sequence being carried out by another capacitance (Cb) of the second pixel.

13. Device according to one of claims 11 or 12, the switching circuit (120') comprising: - a switch element (111) between the first electrode (101a) of the first capacitor (Ca) and the first reading node (NLi); - a switch element (112) between the second electrode (102a) of the first capacitor (Ca) and the detection node (ND); - a switch element (116) between the first electrode (101b) of the second capacitor (Cb) and the first reading node (NLi); - a switch element (117) between the second electrode (102b) of the second capacitor (Cb) and the detection node (ND); - a switch element (121) between the first electrode (101a) of the first capacitor (Ca) and the detection node (ND); - a switch element (122) between the second electrode (102a) of the first capacitor (Ca) and the second reading node (NL2);- a switch element (123) between the first electrode (101b) of the second capacitor (Cb) and the detection node (ND); - a switch element (124) between the second electrode (102b) of the second capacitor (Cb) and the first reading node (NLi).;

14. Device according to one of claims 1 to 13, in which said amplifier stage (Al) is formed: - of a first transistor (M2c) provided with a gate connected to the photodetector (PD) and an electrode, in particular a drain electrode, connected to the reading node - of a second transistor (Mlc) mounted as a current source and having a common electrode with the first transistor (M2c).

15. Device according to claim 14, wherein said depth pixels have a matrix arrangement, the device further comprising an external polarization block (EPB) common to the depth pixels. depth of the same row, in particular a horizontal row or a line of pixels of depth, the external polarization block (BPE) comprising a portion of circuit mounted in current mirror with said second transistor (Mlc).

16. Device according to one of the preceding claims, in which the reading circuit is further provided with a reset switch (8) in parallel with said feedback branch, provided to, when closed, reset the integration capacitance (Ca) prior to said integration period, said reset switch (8) being open during said integration period.

17. Device according to one of claims 1 to 16, in which the photodetector is a non-pinched photodiode in particular based on a III-V material such as InGaAs.

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