Light-emitting device, projector, display, and head-mounted display

Abstract

To provide a light-emitting device that can reduce the difference between the position of a first surface of a first electrode on the opposite side of a first semiconductor part and the position of a second surface of a second electrode on the opposite side of the first semiconductor part in a lamination direction.SOLUTION: A light-emitting device has: a substrate; a first semiconductor part having a first conductivity type; a first columnar part and a second columnar part each having a second semiconductor part having a second conductivity type different from the first conductivity type, a third semiconductor part having the first conductivity type, and a quantum well layer; a first electrode; a second electrode; and a conductive member electrically connecting the second electrode and the first semiconductor part to each other. The first columnar part and the second columnar part project from the first semiconductor part toward the substrate. The first electrode is electrically connected with the second semiconductor part of the first columnar part. The second electrode is electrically connected with the third semiconductor part of the first columnar part via the conductive member and the first semiconductor part.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a projector, a display, and a head-mounted display. [Background technology]

[0002] Semiconductor lasers are expected to be the next generation of high-brightness light sources. In particular, semiconductor lasers that incorporate nanocolumns are expected to be able to achieve high-power emission with a narrow beam angle due to the photonic crystal effect of the periodic arrangement of nanocolumns.

[0003] For example, Patent Document 1 describes a light-emitting device having a buffer layer, a columnar portion provided on the buffer layer, a first electrode provided on the buffer layer, and a second electrode provided on the columnar portion. The columnar portion has a first n-type semiconductor layer, a second p-type semiconductor layer, and a light-emitting layer provided between the first and second semiconductor layers. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-161620 Summary of the Invention [Problem to be solved by the invention]

[0005] Flip-chip mounting is known for the light-emitting device described above. If there is a large difference in the position of the surface of the first electrode opposite the buffer layer in the stacking direction of the first semiconductor layer and the light-emitting layer, and the position of the surface of the second electrode opposite the buffer layer, flip-chip mounting is difficult. [Means for solving the problem]

[0006] One aspect of the light emitting device according to the present invention is A substrate; a first semiconductor portion having a first conductivity type; a first columnar section and a second columnar section, each of which has a second semiconductor section having a second conductivity type different from the first conductivity type, a third semiconductor section having the first conductivity type and provided between the first semiconductor section and the second semiconductor section, and a quantum well layer provided between the second semiconductor section and the third semiconductor section; a first electrode provided between the first columnar section and the substrate; a second electrode provided between the second columnar section and the substrate; a conductive member that electrically connects the second electrode and the first semiconductor portion; and the first columnar section and the second columnar section each protrude from the first semiconductor section toward the substrate, the second semiconductor portion is provided between the substrate and the quantum well layer, the first electrode is electrically connected to the second semiconductor portion of the first columnar portion, The second electrode is electrically connected to the third semiconductor portion of the first columnar portion via the conductive member and the first semiconductor portion.

[0007] One aspect of the projector according to the present invention is The light emitting device has one aspect.

[0008] One aspect of the display according to the present invention is The light emitting device has one aspect.

[0009] One aspect of the head mounted display according to the present invention is The light emitting device has one aspect. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view schematically showing a light emitting device according to a first embodiment. [Figure 2] FIG. 1 is a plan view schematically showing a light emitting device according to a first embodiment. [Figure 3] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 4] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 5] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 6] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 9] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 10] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a second embodiment. [Figure 11] FIG. 10 is a plan view schematically showing a light emitting device according to a second embodiment. [Figure 12] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 13] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 14] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 15] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 16] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 17] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 18] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 19] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 20] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 21] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 22]5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 23] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 24] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 25] FIG. 10 is a diagram schematically showing a projector according to a third embodiment. [Figure 26] FIG. 10 is a plan view schematically showing a display according to a fourth embodiment. [Figure 27] FIG. 10 is a cross-sectional view schematically showing a display according to a fourth embodiment. [Figure 28] FIG. 10 is a perspective view schematically showing a head-mounted display according to a fifth embodiment. [Figure 29] FIG. 10 is a diagram schematically illustrating an image forming device and a light guiding device of a head-mounted display according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First embodiment 1.1. Light-emitting device First, the light emitting device according to the first embodiment will be described with reference to the drawings. Fig. 1 is a cross-sectional view that schematically shows the light emitting device 100 according to the first embodiment. Fig. 2 is a plan view that schematically shows the light emitting device 100 according to the first embodiment. Note that Fig. 1 is taken along line II shown in Fig. 2. Cross-sectional view.

[0013] 1 and 2, the light emitting device 100 includes, for example, a substrate 10 and a light emitting element 20. For convenience, FIG. 2 does not illustrate any components other than the first electrode 30, the first metal layer 44, the conductive member 60, and the first semiconductor portion 70 of the light emitting element 20. FIG. 2 also illustrates the outer edge of the conductive member 60. FIG. 2 also illustrates the first semiconductor portion 70 in a see-through manner.

[0014] As shown in FIG. 1, the substrate 10 includes, for example, a circuit board 12, a first bump 14, and a second bump 16.

[0015] The circuit board 12 is electrically connected to the light-emitting element 20 via bumps 14 and 16. The circuit board 12 includes a drive circuit for driving the light-emitting element 20. The drive circuit is configured, for example, by an IC (integrated circuit). The circuit board 12 is provided with first wiring and second wiring (not shown). The drive circuit and the first electrode 30 are electrically connected by the first wiring (not shown). The drive circuit and the second electrode 40 are electrically connected by the second wiring (not shown).

[0016] The first bump 14 and the second bump 16 are provided on the circuit board 12. The bumps 14, 16 are provided between the circuit board 12 and the light emitting element 20. The bumps 14, 16 are spaced apart from each other. The bumps 14, 16 are made of, for example, copper or gold.

[0017] In "1.1. Light-emitting device," in the stacking direction (hereinafter also simply referred to as "stacking direction") between the second semiconductor portion 52 and the quantum well layer 54 of the columnar portion 50 of the light-emitting element 20, when the quantum well layer 54 is used as a reference, the direction from the quantum well layer 54 toward the third semiconductor portion 56 of the columnar portion 50 is referred to as "upper," and the direction from the quantum well layer 54 toward the second semiconductor portion 52 is referred to as "lower." The direction perpendicular to the stacking direction is also referred to as "in-plane direction."

[0018] The light emitting element 20 is provided on a substrate 10. The light emitting element 20 has a first electrode 30, a second electrode 40, a columnar portion 50, a conductive member 60, and a first semiconductor portion 70. The light emitting element 20 is flip-chip mounted with the electrodes 30, 40 facing the substrate 10. Therefore, in the light emitting device 100, there is no need to establish electrical connection between the electrodes and the circuit board using, for example, wire bonding, and the device can be made smaller.

[0019] The first electrode 30 is provided on the first bump 14. The first electrode 30 is, for example, bonded to the first bump 14. The first electrode 30 is provided between the first bump 14 and the columnar portion 50. In the example shown in FIG. 2, the planar shape of the first electrode 30 is quadrilateral, such as a square or a rectangle, but it may also be circular or a polygonal shape other than a quadrilateral. The first electrode 30 is, for example, a metal layer with a large work function, such as a gold layer or a nickel layer, or a laminate of these.

[0020] As shown in FIG. 1 , the first electrode 30 has a first surface 32. The first surface 32 is the surface of the first electrode 30 opposite the first semiconductor portion 70. The first surface 32 is the surface of the first electrode 30 facing the substrate 10. The first surface 32 is the end of the first electrode 30 facing the substrate 10. In the illustrated example, the first surface 32 is the bottom surface of the first electrode 30.

[0021] The second electrode 40 is provided on the second bump 16. The second electrode 40 is joined to the second bump 16, for example, via solder (not shown). The second electrode 40 is provided between the second bump 16 and the columnar portion 50 and the conductive member 60.

[0022] The second electrode 40 has a second surface 42. The second surface 42 is a first semiconductor of the second electrode 40. The second surface 42 is the surface opposite to the portion 70. The second surface 42 is the surface of the second electrode 40 facing the substrate 10. The second surface 42 is the end of the second electrode 40 facing the substrate 10. In the illustrated example, the second surface 42 is the bottom surface of the second electrode 40. The second electrode 40 has, for example, a first metal layer 44 and a second metal layer 46.

[0023] The first metal layer 44 of the second electrode 40 is provided on the second bump 16. The first metal layer 44 is bonded to the second bump 16. The first metal layer 44 is provided between the second bump 16 and the second metal layer 46. In the example shown in FIG. 2, the planar shape of the first metal layer 44 is quadrilateral, such as a square or a rectangle, but it may also be circular or a polygonal shape other than a quadrilateral. The first metal layer 44 is, for example, a gold layer, a nickel layer, an aluminum layer, a titanium layer, or a laminate of these.

[0024] As shown in FIG. 1 , the second metal layer 46 of the second electrode 40 is provided on the first metal layer 44. The second metal layer 46 is provided between the first metal layer 44 and the columnar section 50 and conductive member 60. When viewed from the stacking direction, the first metal layer 44 is provided inside the second metal layer 46. The second metal layer 46 is, for example, a platinum layer. The first metal layer 44 is in contact with the conductive member 60, for example, and may be formed simultaneously and from the same material as the conductive member 60. Furthermore, the material constituting the second metal layer 46 may be different from the material constituting the first metal layer 44.

[0025] The second electrode 40 is spaced apart from the first electrode 30. The height H1 of the first electrode 30 and the height H2 of the second electrode 40 are, for example, the same. "Height" refers to the size in the stacking direction. In the illustrated example, the distance between the first surface 32 of the first electrode 30 and the first semiconductor portion 70 is the same as the distance between the second surface 42 of the second electrode 40 and the first semiconductor portion 70.

[0026] The columnar portion 50 is provided between the substrate 10 and the first semiconductor portion 70. The columnar portion 50 protrudes from the first semiconductor portion 70 toward the substrate 10. The columnar portion 50 is also called, for example, a nanocolumn, a nanowire, a nanorod, or a nanopillar. The planar shape of the columnar portion 50 is, for example, a polygon such as a regular hexagon, or a circle.

[0027] The diameter of the columnar portion 50 is, for example, 50 nm or more and 500 nm or less. By setting the diameter of the columnar portion 50 to 500 nm or less, a quantum well layer 54 with high-quality crystals can be obtained, and strain inherent in the quantum well layer 54 can be reduced.

[0028] It should be noted that the "diameter of the columnar portion 50" refers to the diameter when the planar shape of the columnar portion 50 is circular, and refers to the diameter of the smallest encompassing circle when the planar shape of the columnar portion 50 is not circular. For example, when the planar shape of the columnar portion 50 is polygonal, the diameter of the smallest circle that includes the polygon inside, and when the planar shape of the columnar portion 50 is elliptical, the diameter of the smallest circle that includes the ellipse inside.

[0029] A plurality of columnar sections 50 are provided. The columnar sections 50 are spaced apart from one another. The interval between adjacent columnar sections 50 is, for example, 5 nm or more and 30 nm or less. When the space between adjacent columnar sections 50 is filled with an insulating layer, the interval between adjacent columnar sections 50 may be as wide as about 200 nm. The columnar sections 50 are arranged at a predetermined pitch in a predetermined direction as viewed from the stacking direction. The columnar sections 50 are arranged, for example, in a regular triangular lattice or square lattice pattern. The columnar sections 50 can exhibit the effect of a photonic crystal.

[0030] The "pitch of the columnar portions 50" is the distance between the centers of the columnar portions 50 adjacent to each other in a predetermined direction. When the planar shape of the columnar portions 50 is a circle, the "center of the columnar portion 50" is the center of the circle, and when the planar shape of the columnar portions 50 is not a circle, the "center of the smallest encompassing circle" is the center of the smallest encompassing circle. For example, For example, if the planar shape of the columnar portion 50 is a polygon, the center of the columnar portion 50 is the center of the smallest circle that contains the polygon inside, and if the planar shape of the columnar portion 50 is an ellipse, the center of the smallest circle that contains the ellipse inside.

[0031] The columnar section 50 has a second semiconductor section 52, a quantum well layer 54, and a third semiconductor section 56. In the example shown, the columnar section 50 is composed of the second semiconductor section 52, the quantum well layer 54, and the third semiconductor section 56. The second semiconductor section 52, the quantum well layer 54, and the third semiconductor section 56 are, for example, Group III nitride semiconductors and have a wurtzite crystal structure.

[0032] The second semiconductor portion 52 is provided between the substrate 10 and the quantum well layer 54. The second semiconductor portion 52 is a semiconductor layer having a second conductivity type different from the first conductivity type. The second conductivity type is, for example, p-type. The second semiconductor portion 52 is, for example, a p-type GaN layer doped with Mg.

[0033] The quantum well layer 54 is provided on the second semiconductor portion 52. The quantum well layer 54 is provided between the second semiconductor portion 52 and the third semiconductor portion 56. The quantum well layer 54 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The quantum well layer 54 has an MQW (Multiple Quantum Well) structure composed of the well layer and the barrier layer.

[0034] There is no particular limitation on the number of well layers and barrier layers that make up the quantum well layer 54. For example, only one well layer may be provided, in which case the quantum well layer 54 has an SQW (Single Quantum Well) structure.

[0035] The third semiconductor portion 56 is provided on the quantum well layer 54. The third semiconductor portion 56 is provided between the quantum well layer 54 and the first semiconductor portion 70. The third semiconductor portion 56 is provided between the first semiconductor portion 70 and the second semiconductor portion 52. The third semiconductor portion 56 is a semiconductor layer having a first conductivity type. The first conductivity type is, for example, n-type. The third semiconductor portion 56 is, for example, an n-type GaN layer doped with Si.

[0036] Of the multiple columnar sections 50, the first columnar section 50a is the columnar section 50 provided between the first electrode 30 and the first semiconductor section 70. The first electrode 30 is provided between the first columnar section 50a and the substrate 10. The first electrode 30 is electrically connected to the second semiconductor section 52 of the first columnar section 50a. In the example shown in the figure, the first electrode 30 is in contact with the second semiconductor section 52 of the first columnar section 50a. The second semiconductor section 52 of the first columnar section 50a may be in ohmic contact with the first electrode 30.

[0037] Of the multiple columnar sections 50, the second columnar section 50b is a columnar section 50 provided between the second electrode 40 and the first semiconductor section 70. The second electrode 40 is provided between the second columnar section 50b and the substrate 10. In the example shown, the second columnar section 50b is in contact with the second electrode 40. The second semiconductor section 52 of the second columnar section 50b may be in ohmic contact with the second electrode 40. In the example shown, the second columnar section 50b is in contact with the conductive member 60.

[0038] Of the multiple columnar portions 50, the third columnar portion 50c is a columnar portion 50 that is separated from the first electrode 30 and the conductive member 60. In the illustrated example, the third columnar portion 50c is provided between the first columnar portion 50a and the second columnar portion 50b. In other words, the third columnar portion 50c is not electrically connected to the first electrode 30 and the second electrode 40 on the circuit board 12 side.

[0039] In the illustrated example, adjacent first columnar sections 50a are provided. There is a gap between the adjacent second columnar sections 50b. A plurality of second columnar sections 50b are provided. A conductive member 60 is provided between adjacent second columnar sections 50b. The number of first columnar sections 50a is, for example, equal to or greater than the number of second columnar sections 50b. The number of first columnar sections 50a is, for example, greater than the number of second columnar sections 50b. A plurality of third columnar sections 50c are provided. In the illustrated example, there is a gap between adjacent third columnar sections 50c. There is a gap between adjacent first columnar sections 50a and third columnar sections 50c. The plurality of first columnar sections 50a, the plurality of second columnar sections 50b, and the plurality of third columnar sections 50c are provided at, for example, the same pitch. The diameter of the first columnar section 50a, the diameter of the second columnar section 50b, and the diameter of the third columnar section 50c are, for example, the same.

[0040] The height H3 of the first columnar section 50a and the height H4 of the second columnar section 50b are, for example, the same. In the example shown, the distance between the underside of the first columnar section 50a and the first semiconductor section 70 is the same as the distance between the underside of the second columnar section 50b and the first semiconductor section 70. The "undersides of the columnar sections 50a, 50b" refer to the surfaces of the columnar sections 50a, 50b facing the substrate 10, respectively.

[0041] The quantum well layer 54 of the first columnar section 50a is a light-emitting layer that generates light when a current is injected into it. The second semiconductor section 52 and the third semiconductor section 56 of the first columnar section 50a are cladding layers that have the function of confining light in the quantum well layer 54 of the first columnar section 50a. The quantum well layer 54 of the second columnar section 50b does not generate light. The quantum well layer 54 of the third columnar section 50c does not generate light. In the example shown, the quantum well layers 54 of the columnar sections 50 other than the first columnar section 50a among the multiple columnar sections 50 do not generate light.

[0042] In the light-emitting device 100, a p-i-n diode is formed by the p-type second semiconductor section 52 of the first columnar section 50a, the i-type quantum well layer 54 of the first columnar section 50a, and the n-type third semiconductor section 56 of the first columnar section 50a. When a forward bias voltage of the p-i-n diode is applied between the first electrode 30 and the second electrode 40, a current is injected into the quantum well layer 54 of the first columnar section 50a, causing electrons and holes to recombine in the quantum well layer 54. This recombination generates light. The light generated in the quantum well layer 54 of the first columnar section 50a propagates in the in-plane direction and forms a standing wave due to the photonic crystal effect of the multiple first columnar sections 50a. The light-emitting device 100 then emits +1st-order diffracted light and −1st-order diffracted light as laser light in the stacking direction.

[0043] Light generated in the quantum well layer 54 of the first columnar section 50a and directed toward the first electrode 30 is reflected by the first electrode 30. This allows the light emitting device 100 to emit light only from the first semiconductor section 70 side.

[0044] The first columnar section 50a and the third columnar section 50c are adjacent to each other. The pitch between adjacent first columnar sections 50a and third columnar sections 50c is the same as the pitch between adjacent first columnar sections 50a. Therefore, compared to when the first columnar section and the second columnar section are adjacent to each other, the period of the refractive index difference experienced by light propagating in the in-plane direction can be increased. The refractive index difference is the difference between the refractive index of the columnar section 50 and the refractive index of the gap between adjacent columnar sections 50. If a conductive member is present between adjacent columnar sections, this refractive index difference changes, disrupting the periodicity. As a result, light generated near the first columnar section adjacent to the third columnar section cannot obtain the effect of the photonic crystal, and the light extraction efficiency decreases.

[0045] The conductive member 60 is provided on the second electrode 40. The conductive member 60 is provided between the second electrode 40 and the first semiconductor portion 70. The conductive member 60 electrically connects the second electrode 40 and the first semiconductor portion 70. In the example shown, the conductive member 60 is in contact with the second metal layer 46 and the first semiconductor portion 70. The conductive member 60 is separated from the first columnar portion 50a.

[0046] The conductive member 60 is provided between adjacent second columnar sections 50b. When viewed from the stacking direction, the conductive member 60 surrounds the second columnar section 50b. The conductive member 60 is provided on the side surface 51 of the second columnar section 50b. The side surface 51 is formed, for example, by an m-plane.

[0047] The conductive member 60 is made of, for example, platinum. The conductive member 60 is provided integrally with the second metal layer 46, for example. By providing the second metal layer 46 and the conductive member 60 integrally, the second metal layer 46 and the conductive member 60 can be formed in the same process. This allows the manufacturing process to be shortened compared to when the second metal layer 46 and the conductive member 60 are formed in separate processes. Note that the material constituting the second metal layer 46 and the material constituting the conductive member 60 may be different. Furthermore, the material constituting the first metal layer 44 and the material constituting the conductive member 60 may be different or the same.

[0048] The first semiconductor portion 70 is provided on the multiple columnar portions 50. In the illustrated example, the first semiconductor portion 70 is in contact with the multiple columnar portions 50 and the conductive member 60. The first semiconductor portion 70 is a semiconductor layer having a first conductivity type. The first semiconductor portion 70 is, for example, an n-type GaN layer doped with Si. The second electrode 40 is electrically connected to the third semiconductor portion 56 of the first columnar portion 50a via the conductive member 60 and the first semiconductor portion 70.

[0049] Although not shown, a mask layer for growing the columnar section 50 may be provided below the first semiconductor section 70. The mask layer is, for example, a titanium layer, a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, or the like.

[0050] Although the above description has been given of an InGaN-based quantum well layer 54, various material systems that can emit light when a current is injected can be used for the quantum well layer 54 of the first columnar section 50a, depending on the wavelength of the emitted light. For example, semiconductor materials such as AlGaN-based, AlInN-based, and AlGaInN-based materials can be used.

[0051] Furthermore, the light emitting device 100 is not limited to a laser, but may also be an LED (Light Emitting Diode).

[0052] Furthermore, in the above description, an example has been described in which the first conductivity type is n-type and the second conductivity type is p-type, but the first conductivity type may be p-type and the second conductivity type may be n-type.

[0053] The light emitting device 100 has the following advantages, for example.

[0054] The light-emitting device 100 includes a substrate 10, a first columnar section 50a and a second columnar section 50b, each of which has a first semiconductor section 70 having a first conductivity type, a second semiconductor section 52 having a second conductivity type different from the first conductivity type, a third semiconductor section 56 having the first conductivity type and provided between the first semiconductor section 70 and the second semiconductor section 52, and a quantum well layer 54 provided between the second semiconductor section 52 and the third semiconductor section 56, a first electrode 30 provided between the first columnar section 50a and the substrate 10, a second electrode 40 provided between the second columnar section 50b and the substrate 10, and a conductive member 60 electrically connecting the second electrode 40 and the first semiconductor section 70. The first columnar section 50a and the second columnar section 50b each protrude from the first semiconductor section 70 toward the substrate 10. The second semiconductor section 52 is provided between the substrate 10 and the quantum well layer 54. The first electrode 30 is electrically connected to the second semiconductor portion 52 of the first columnar portion 50a, and the second electrode 40 is electrically connected to the third semiconductor portion 56 of the first columnar portion 50a via the conductive member 60 and the first semiconductor portion 70.

[0055] Therefore, in the light emitting device 100, compared to when the second columnar section is not provided, the position of the first surface 32 of the first electrode 30 on the side opposite to the first semiconductor section 70 in the stacking direction and the position of the second electrode 30 on the side opposite to the first semiconductor section 70 are closer to each other. This reduces the difference in the position between the first surface 42 of the electrode 40 and the second surface 42 on the side opposite to the first semiconductor portion 70. Therefore, in the light emitting device 100, the light emitting element 20 can be easily flip-chip mounted on the substrate 10. In particular, in the light emitting device 100, because both the first columnar portion 50a and the second columnar portion 50b have the second semiconductor portion 52, the quantum well layer 54, and the third semiconductor portion 56, it is easy to align the height H3 of the first columnar portion 50a and the height H4 of the second columnar portion 50b.

[0056] In the light emitting device 100, the height H3 of the first columnar section 50a and the height H4 of the second columnar section 50b are the same. Therefore, in the light emitting device 100, the difference in position between the first surface 32 of the first electrode 30 and the second surface 42 of the second electrode 40 in the stacking direction can be made smaller than when the heights H3 and H4 are different.

[0057] In the light emitting device 100, the material of the conductive member 60 is platinum. Therefore, in the light emitting device 100, the conductive member 60 can be formed by ALD (Atomic Layer Deposition). This makes it possible to form the conductive member 60 between the adjacent second columnar sections 50b, even if the gap between the adjacent second columnar sections 50b is narrow, for example.

[0058] In the light emitting device 100, the height H1 of the first electrode 30 and the height H2 of the second electrode 40 are the same. Therefore, in the light emitting device 100, the difference in the position between the first surface 32 of the first electrode 30 and the second surface 42 of the second electrode 40 in the stacking direction can be made smaller than when the heights H1 and H2 are different.

[0059] In the light emitting device 100, the number of first columnar sections 50a is equal to or greater than the number of second columnar sections 50b. Therefore, in the light emitting device 100, the intensity of the emitted light can be increased compared to when the number of first columnar sections is smaller than the number of second columnar sections.

[0060] 1.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to the drawings. Figures 3 to 9 are cross-sectional views that schematically show the manufacturing process of the light emitting device 100 according to the first embodiment. For convenience, Figures 3 to 9 are shown upside down compared to Figure 1.

[0061] 3, the first semiconductor portion 70 is grown by crystal growth on a growth substrate 2. Examples of methods for growing the crystal include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy). The growth substrate 2 is, for example, a sapphire substrate, a Si substrate, a GaN substrate, or a SiC substrate.

[0062] In "1.2. Method for manufacturing a light-emitting device," the direction from the quantum well layer 54 toward the second semiconductor portion 52 in the stacking direction is referred to as "up," and the direction from the quantum well layer 54 toward the third semiconductor portion 56 is referred to as "down." This also applies to "2.2. Method for manufacturing a light-emitting device," which will be described later.

[0063] Next, a mask layer (not shown) is formed on the first semiconductor portion 70. The mask layer is formed by, for example, electron beam evaporation, ALD, sputtering, or the like.

[0064] Next, a resist is applied onto the mask layer and patterned by EB (Electron Beam) lithography or photolithography. The mask layer is etched using the resist as a mask to expose the first semiconductor portion 70, and the resist is then removed. Then, using the mask layer as a mask, the third semiconductor portion 56, the quantum well layer 54, and the second semiconductor portion 52 are epitaxially grown in this order on the first semiconductor portion 70. Examples of epitaxial growth methods include MOCVD and MBE. This process allows the formation of multiple columnar portions 50.

[0065] 4, a conductive member 60a is formed on the top surface and side surface 51 of the columnar portion 50. The conductive member 60a is formed by, for example, the ALD method. The conductive member 60a is formed so as to fill the gap between adjacent columnar portions 50. The conductive member 60a is also formed above the gap between adjacent columnar portions 50.

[0066] 5, a resist layer 4 having a predetermined shape is formed on the conductive member 60a. The resist layer 4 is formed by, for example, application by spin coating and photolithography.

[0067] As shown in FIG. 6, the conductive member 60a is etched using the resist layer 4 as a mask. Wet etching is used as the etching method. This allows the conductive member 60a to be removed with less etching damage to the columnar section 50 than when dry etching is used. This process allows the conductive member 60 made of the conductive member 60a to be formed between adjacent columnar sections 50. Furthermore, a first metal layer 44 made of the conductive member 60a can be formed on the upper surface of the columnar section 50 and above the space between the adjacent columnar sections 50. This process exposes a portion of the first semiconductor section 70.

[0068] 7, the resist layer 4 is stripped off. The resist layer 4 is stripped off by, for example, organic stripping or O2 plasma.

[0069] As shown in FIG. 8, the first electrode 30 is formed on the columnar section 50. The first electrode 30 is formed by film formation using a vacuum deposition method or a sputtering method, and patterning. The patterning is performed by, for example, photolithography and etching. The first electrode 30 may also be formed by a lift-off method.

[0070] 9, a second metal layer 46 is formed on the first metal layer 44. The second metal layer 46 is formed, for example, by the same method as the first electrode 30. This process makes it possible to form the second electrode 40 having the first metal layer 44 and the second metal layer 46. Furthermore, it is possible to form a light-emitting element 20 having a growth substrate 2, the first electrode 30, the second electrode 40, a columnar portion 50, and a first semiconductor portion 70.

[0071] Next, the growth substrate 2 is removed from the first semiconductor section 70. The growth substrate 2 is removed by, for example, CMP (Chemical Mechanical Polishing). Note that if the growth substrate 2 has high transparency to the light generated in the quantum well layer 54 of the first columnar section 50a, the growth substrate 2 does not need to be removed.

[0072] 1, the first electrode 30 is bonded to the first bump 14, and the second electrode 40 is bonded to the second bump 16, so that the light emitting element 20 is flip-chip mounted on the substrate 10. For example, the position of the first surface 32 of the first electrode 30 and the position of the second surface 42 of the second electrode 40 are the same in the stacking direction, so that the light emitting element 20 can be easily flip-chip mounted. The bumps 14 and 16 are formed, for example, by plating. First Semiconductor Department

[0073] Through the above steps, the light emitting device 100 can be manufactured.

[0074] 2. Second embodiment 2.1. Light-emitting device Next, a light emitting device according to a second embodiment will be described with reference to the drawings. Fig. 10 is a cross-sectional view showing a light emitting device 200 according to the second embodiment. Fig. 11 is a cross-sectional view showing a light emitting device according to the second embodiment. 10 is a plan view schematically showing a light emitting device 100 according to the embodiment, and is a cross-sectional view taken along line XX shown in FIG.

[0075] Hereinafter, in the light emitting device 200 according to the second embodiment, components having the same functions as the components of the light emitting device 100 according to the first embodiment described above will be given the same reference numerals, and detailed description thereof will be omitted.

[0076] As shown in Figures 10 and 11, the light emitting device 200 differs from the above-described light emitting device 100 in that it includes an insulating layer 80. For convenience, Figure 11 does not illustrate components other than the first electrode 30, the first metal layer 44, the conductive member 60, the first semiconductor portion 70, and the insulating layer 80. Figure 11 also illustrates the outer edges of the conductive member 60 and the insulating layer 80. Figure 11 also illustrates the first semiconductor portion 70 in a see-through manner.

[0077] The light emitting element 20 has an insulating layer 80. The insulating layer 80 is provided between the first electrode 30 and the first semiconductor section 70. The insulating layer 80 covers the side surface 51 of the first columnar section 50a. The insulating layer 80 is provided between adjacent first columnar sections 50a. The insulating layer 80 surrounds the first columnar section 50a when viewed from the stacking direction. The insulating layer 80 is separated from the conductive member 60.

[0078] The insulating layer 80 is, for example, an aluminum oxide (Al2O3) layer or a silicon oxide (SiO2) layer. When light generated in the quantum well layer 54 of the first columnar section 50a due to the photonic crystal effect propagates in an in-plane direction, the light propagates through the insulating layer 80 in the in-plane direction.

[0079] The light emitting device 200 has an insulating layer 80 that covers the side surface 51 of the first columnar section 50a. Therefore, in the light emitting device 200, the insulating layer 80 can protect the first columnar section 50a.

[0080] Furthermore, in the light emitting device 200, the insulating layer 80 is provided between adjacent first columnar sections 50a, so the distance between adjacent first columnar sections 50a can be made larger than when no insulating layer is provided between adjacent first columnar sections. For example, when no insulating layer is provided between adjacent first columnar sections, if the distance between adjacent first columnar sections is set to 30 nm or more, the electrode material formed by sputtering or vacuum deposition will be attached to the quantum well layer side rather than the second semiconductor section, causing a short circuit.

[0081] 2.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 200 according to the second embodiment will be described with reference to the drawings. Figures 12 to 24 are cross-sectional views that schematically show the manufacturing process of the light emitting device 200 according to the second embodiment. For convenience, the light emitting device 200 is shown upside down in Figures 12 to 24 compared to Figure 10.

[0082] The method for manufacturing the light emitting device 200 is the same as the method for manufacturing the light emitting device 100 described above up to the step of forming a plurality of columnar sections 50 on the first semiconductor section 70, as shown in FIG.

[0083] 12, an insulating layer 80 is formed on the top surface and side surface 51 of the columnar section 50. The insulating layer 80 is formed by, for example, the ALD method. The insulating layer 80 is formed so as to fill the gaps between adjacent columnar sections 50. The insulating layer 80 is also formed above the gaps between adjacent columnar sections 50.

[0084] 13, a resist layer 6 having a predetermined shape is formed on the insulating layer 80. The resist layer 6 is formed by, for example, application by spin coating and photolithography. will be done.

[0085] As shown in FIG. 14, the insulating layer 80 is etched using the resist layer 6 as a mask. Wet etching is used as the etching method. This allows the amount of etching of the columnar section 50 to be smaller than when dry etching is used. This step exposes a part of the first semiconductor section 70. As the etching liquid, for example, a diluted hydrofluoric acid liquid or a buffered hydrofluoric acid liquid is used.

[0086] 15, the resist layer 6 is stripped off. The resist layer 6 is stripped off by, for example, an organic stripping method.

[0087] 16, conductive members 60a are formed on the upper and side surfaces 51 of the columnar section 50 and the upper and side surfaces of the insulating layer 80. The conductive members 60a are formed in the same manner as in the light emitting device 100.

[0088] 17, a resist layer 4 having a predetermined shape is formed on the conductive member 60a. The method for forming the resist layer 4 is the same as that for the light emitting device 100.

[0089] 18, the conductive member 60a is etched using the resist layer 4 as a mask. The method for etching the conductive member 60a is the same as that for the light emitting device 100. By this step, the insulating layer 80 is exposed.

[0090] 19, the resist layer 4 is peeled off. The method for peeling off the resist layer 4 is the same as that for the light emitting device 100.

[0091] 20, a resist layer 8 having a predetermined shape is formed on the first metal layer 44 and the insulating layer 80. The resist layer 8 is formed by, for example, application by spin coating and photolithography.

[0092] As shown in FIG. 21, the insulating layer 80 is etched using the resist layer 8 as a mask. Wet etching is used as the etching method. This allows the insulating layer 80 to be etched with less etching damage to the columnar sections 50 than when dry etching is used. As the etching liquid, for example, a diluted hydrofluoric acid liquid or a buffered hydrofluoric acid liquid is used. This process exposes some of the multiple columnar sections 50.

[0093] 22, the resist layer 8 is stripped off. The resist layer 8 is stripped off by, for example, an organic stripping method.

[0094] 23, the first electrode 30 is formed on the insulating layer 80 and on the exposed columnar section 50. The method for forming the first electrode 30 is the same as that for the light emitting device 100.

[0095] 24, the second metal layer 46 is formed on the conductive member 60. The method for forming the second metal layer 46 is the same as that for the light emitting device 100.

[0096] As shown in FIG. 10, the first electrodes 30 are bonded to the first bumps 14, the second electrodes 40 are bonded to the second bumps 16, and the light emitting element 20 is flip-chip mounted on the substrate 10.

[0097] Through the above steps, the light emitting device 200 can be manufactured.

[0098] 3. Third embodiment Next, a projector according to a third embodiment will be described with reference to the drawings. Figure 25 is a diagram schematically showing a projector 700 according to the third embodiment.

[0099] The projector 700 includes, for example, a light emitting device 100 as a light source.

[0100] Projector 700 has a housing (not shown) and red light source 100R, green light source 100G, and blue light source 100B that are provided in the housing and emit red light, green light, and blue light, respectively. For convenience, red light source 100R, green light source 100G, and blue light source 100B are simplified in FIG.

[0101] The projector 700 further includes, within the housing, a first optical element 702R, a second optical element 702G, a third optical element 702B, a first light modulation device 704R, a second light modulation device 704G, a third light modulation device 704B, and a projection device 708. The first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are, for example, transmissive liquid crystal light valves. The projection device 708 is, for example, a projection lens.

[0102] Light emitted from red light source 100R is incident on first optical element 702R. The light emitted from red light source 100R is collected by first optical element 702R. Note that first optical element 702R may have a function other than collecting light. The same applies to second optical element 702G and third optical element 702B, which will be described later.

[0103] The light collected by the first optical element 702R is incident on the first light modulation device 704R. The first light modulation device 704R modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the first light modulation device 704R and projects it onto the screen 710.

[0104] The light emitted from green light source 100G is incident on second optical element 702G, and is collected by second optical element 702G.

[0105] The light collected by the second optical element 702G is incident on the second light modulation device 704G. The second light modulation device 704G modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the second light modulation device 704G and projects it onto the screen 710.

[0106] The light emitted from blue light source 100B is incident on third optical element 702B. The light emitted from blue light source 100B is collected by third optical element 702B.

[0107] The light collected by the third optical element 702B enters the third light modulation device 704B. The third light modulation device 704B modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the third light modulation device 704B and projects it onto the screen 710.

[0108] The projector 700 further includes a cross dichroic prism 706 that combines the light emitted from the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B and guides the combined light to a projection device 708.

[0109] The three color lights modulated by the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are incident on the cross dichroic prism 706. The cross dichroic prism 706 is formed by bonding four right-angle prisms together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are arranged on the inner surface of the cross dichroic prism 706. These dielectric multilayer films combine the three color lights to form light that represents a color image. The combined light is then projected onto a screen 710 by a projection device 708, where an enlarged image is displayed.

[0110] Note that red light source 100R, green light source 100G, and blue light source 100B may directly form an image without using first light modulation device 704R, second light modulation device 704G, and third light modulation device 704B, by controlling light emitting device 100 as pixels of the image in accordance with image information. Then, projection device 708 may enlarge and project the image formed by red light source 100R, green light source 100G, and blue light source 100B onto screen 710.

[0111] In the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than a liquid crystal light valve or a reflective light valve may also be used. Examples of such light valves include a reflective liquid crystal light valve and a digital micromirror device. The configuration of the projection device can be changed as appropriate depending on the type of light valve used.

[0112] The light source can also be applied to a light source device of a scanning type image display device having a scanning means which is an image forming device that displays an image of a desired size on a display surface by scanning light from the light source on a screen.

[0113] 4. Fourth embodiment Next, a display according to a fourth embodiment will be described with reference to the drawings. Fig. 26 is a plan view schematically showing a display 800 according to this embodiment. Fig. 27 is a cross-sectional view schematically showing the display 800 according to this embodiment. Note that Fig. 26 illustrates an X-axis and a Y-axis as two axes that are orthogonal to each other.

[0114] The display 800 includes, for example, a light emitting device 100 as a light source.

[0115] The display 800 is a display device that displays images. Images include images that display only text information. The display 800 is a self-luminous display. As shown in FIGS. 26 and 27 , the display 800 includes, for example, a circuit board 810, a lens array 820, and a heat sink 830.

[0116] A drive circuit for driving the light emitting device 100 is mounted on the circuit board 810. The drive circuit is, for example, a circuit including a CMOS (Complementary Metal Oxide Semiconductor). The drive circuit drives the light emitting device 100, for example, based on input image information. Although not shown, a light-transmitting substrate for protecting the circuit board 810 is disposed on the circuit board 810. The circuit board 810 may be configured as the circuit board 12 shown in FIG. 1.

[0117] The circuit board 810 includes, for example, a display area 812, a data line driving circuit 814, a scanning line driving circuit 816, and a control circuit 818.

[0118] The display area 812 is made up of a plurality of pixels P. In the illustrated example, the pixels P are arranged along the X-axis and Y-axis.

[0119] Although not shown, the circuit board 810 is provided with a plurality of scan lines and a plurality of data lines. For example, the scan lines extend along the X axis, and the data lines extend along the Y axis. The scan lines are connected to a scan line driving circuit 816. The data lines are connected to a data line driving circuit 814. Pixels P are provided at the intersections of the scanning lines and data lines.

[0120] One pixel P includes, for example, one light-emitting device 100, one lens 822, and a pixel circuit (not shown). The pixel circuit includes a switching transistor that functions as a switch for the pixel P. The gate of the switching transistor is connected to a scan line, and either the source or the drain is connected to a data line.

[0121] The data line driving circuit 814 and the scanning line driving circuit 816 are circuits that control the driving of the light emitting devices 100 that constitute the pixels P. The control circuit 818 controls the display of images.

[0122] Image data is supplied from a higher-level circuit to the control circuit 818. The control circuit 818 supplies various signals based on the image data to the data line driving circuit 814 and the scanning line driving circuit 816.

[0123] When the scanning line driving circuit 816 activates a scanning signal to select a scanning line, the switching transistor of the selected pixel P is turned on. At this time, the data line driving circuit 814 supplies a data signal from the data line to the selected pixel P, causing the light emitting device 100 of the selected pixel P to emit light in response to the data signal.

[0124] The lens array 820 has a plurality of lenses 822. For example, one lens 822 is provided for one light emitting device 100. Light emitted from the light emitting device 100 is incident on one lens 822.

[0125] The heat sink 830 is in contact with the circuit board 810. The material of the heat sink 830 is, for example, a metal such as copper or aluminum. The heat sink 830 dissipates the heat generated by the light emitting device 100.

[0126] 5. Fifth embodiment 5.1. Overall structure Next, a head mounted display according to a fifth embodiment will be described with reference to the drawings. Fig. 28 is a perspective view schematically showing a head mounted display 900 according to this embodiment. In Fig. 28, an X-axis, a Y-axis, and a Z-axis are illustrated as three axes that are orthogonal to each other.

[0127] As shown in FIG. 28, the head mounted display 900 is a head-mounted display device that has an appearance similar to glasses. The head mounted display 900 is worn on the head of an observer. The observer is a user who uses the head mounted display 900. The head mounted display 900 allows the observer to view image light formed by a virtual image, and also allows the observer to view an external world image in a see-through manner. The head mounted display 900 can also be called a virtual image display device.

[0128] The head mounted display 900 has, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0129] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the observer's right eye. The second display unit 910b displays a virtual image for the observer's left eye. In the illustrated example, the first display unit 910a is provided on the -X axis direction of the second display unit 910b. The display units 910a and 910b each include, for example, an image forming device 911 and a light guide device 915.

[0130] The image forming device 911 forms image light. The image forming device 911 has an optical system, such as a light source and a projection device, and an external member 912. The external member 912 houses the light source and the projection device.

[0131] The light guiding device 915 covers the viewer's eyes. The light guiding device 915 guides the image light formed by the image forming device 911 and allows the viewer to visually recognize the image light overlapping with external light. Details of the image forming device 911 and the light guiding device 915 will be described later.

[0132] The frame 920 supports the first display unit 910a and the second display unit 910b. The frame 920 surrounds the display units 910a and 910b, for example, when viewed from the Y-axis direction. In the illustrated example, the image forming device 911 of the first display unit 910a is attached to the end of the frame 920 in the -X-axis direction. The image forming device 911 of the second display unit 910b is attached to the end of the frame 920 in the +X-axis direction.

[0133] The first temple 930a and the second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends in the +Y-axis direction from the end of the frame 920 in the -X-axis direction. The second temple 930b extends in the +Y-axis direction from the end of the frame 920 in the +X-axis direction.

[0134] The first temple 930a and the second temple 930b are suspended over the ears of the viewer when the viewer wears the head mounted display 900. The viewer's head is positioned between the temples 930a and 930b.

[0135] 5.2. Image Forming Device and Light Guide Device 29 is a diagram schematically illustrating an image forming device 911 and a light guide device 915 of a first display unit 910a of a head-mounted display 900 according to this embodiment. The first display unit 910a and the second display unit 910b basically have the same configuration. Therefore, the following description of the first display unit 910a can also be applied to the second display unit 910b.

[0136] As shown in FIG. 29, the image forming device 911 includes, for example, a light emitting device 100 as a light source, a light modulation device 913, and a projection device 914 for forming an image.

[0137] The light modulation device 913 modulates the light incident from the light emitting device 100 in accordance with image information and emits image light. The light modulation device 913 is a transmissive liquid crystal light valve. The light emitting device 100 may be a self-luminous light emitting device that emits light in accordance with input image information. In this case, the light modulation device 913 is not provided.

[0138] The projection device 914 projects the image light emitted from the light modulation device 913 toward the light guide device 915. The projection device 914 is, for example, a projection lens. The lens constituting the projection device 914 may have an axially symmetrical surface as its lens surface.

[0139] The light guiding device 915 is accurately positioned relative to the projection device 914, for example, by being screwed to the lens barrel of the projection device 914. The light guiding device 915 has, for example, an image light guiding member 916 that guides the image light, and a see-through member 918 for see-through.

[0140] Image light emitted from the projection device 914 is incident on the image light guide member 916. The image light guide member 916 is a prism that guides the image light toward the viewer's eyes. The image light that has entered the image light guide member 916 is repeatedly reflected on the inner surface of the image light guide member 916, and then reflected by the reflective layer 917 and emitted from the image light guide member 916. The image light emitted from 16 reaches the viewer's eye. In the illustrated example, the reflective layer 917 reflects the image light in the +Y axis direction. The reflective layer 917 is made of, for example, a metal or a dielectric multilayer film. The reflective layer 917 may be a half mirror.

[0141] The transparent member 918 is adjacent to the image light guiding member 916. The transparent member 918 is fixed to the image light guiding member 916. For example, the outer surface of the transparent member 918 is continuous with the outer surface of the image light guiding member 916. The transparent member 918 allows the viewer to see outside light through it. Note that the image light guiding member 916 also has a function of allowing the viewer to see outside light through it, in addition to the function of guiding image light.

[0142] The light emitting devices according to the above-described embodiments can be used in applications other than projectors, displays, and head-mounted displays, and are used, for example, as light sources for indoor and outdoor lighting, laser printers, scanners, in-vehicle lights, sensing devices that use light, communication devices, and the like.

[0143] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0144] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effects. The present invention also includes configurations that replace non-essential parts of the configurations described in the embodiments. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations that add publicly known technology to the configurations described in the embodiments.

[0145] The following can be derived from the above-described embodiment and modifications.

[0146] One aspect of the light emitting device is A substrate; a first semiconductor portion having a first conductivity type; a first columnar section and a second columnar section, each of which has a second semiconductor section having a second conductivity type different from the first conductivity type, a third semiconductor section having the first conductivity type and provided between the first semiconductor section and the second semiconductor section, and a quantum well layer provided between the second semiconductor section and the third semiconductor section; a first electrode provided between the first columnar section and the substrate; a second electrode provided between the second columnar section and the substrate; a conductive member that electrically connects the second electrode and the first semiconductor portion; and the first columnar section and the second columnar section each protrude from the first semiconductor section toward the substrate, the second semiconductor portion is provided between the substrate and the quantum well layer, the first electrode is electrically connected to the second semiconductor portion of the first columnar portion, The second electrode is electrically connected to the third semiconductor portion of the first columnar portion via the conductive member and the first semiconductor portion.

[0147] According to this light-emitting device, the difference in the stacking direction of the second semiconductor portion and the quantum well layer between the position of the first surface of the first electrode opposite the first semiconductor portion and the position of the second surface of the second electrode opposite the first semiconductor portion can be reduced.

[0148] In one embodiment of the light emitting device, The height of the first columnar section and the height of the second columnar section may be the same.

[0149] According to this light emitting device, the difference in the stacking direction between the position of the first surface of the first electrode and the position of the second surface of the second electrode can be reduced.

[0150] In one embodiment of the light emitting device, An insulating layer may be provided to cover the side surface of the first columnar section.

[0151] According to this light emitting device, the first columnar section can be protected by the insulating layer.

[0152] In one embodiment of the light emitting device, The conductive member may be made of platinum.

[0153] According to this light emitting device, the conductive member can be formed by the ALD method.

[0154] In one embodiment of the light emitting device, The height of the first electrode and the height of the second electrode may be the same.

[0155] According to this light emitting device, the difference in position between the first surface of the first electrode and the second surface of the second electrode in the stacking direction can be reduced.

[0156] In one embodiment of the light emitting device, The number of the first columnar portions may be equal to or greater than the number of the second columnar portions.

[0157] According to this light emitting device, the intensity of the emitted light can be increased.

[0158] One aspect of the projector is The light emitting device has one aspect.

[0159] One embodiment of the display is The light emitting device has one aspect.

[0160] One aspect of the head mounted display is The light emitting device has one aspect. [Explanation of symbols]

[0161] 2...growth substrate, 4,6,8...resist layer, 10...substrate, 12...circuit board, 14...first bump, 16...second bump, 20...light-emitting element, 30...first electrode, 32...first surface, 40...second electrode, 42...second surface, 44...first metal layer, 46...second metal layer, 50...columnar portion, 50a...first columnar portion, 50b...second columnar portion, 50c...third columnar portion, 51...side surface, 52...second semiconductor portion, 54...quantum well layer, 56...third semiconductor portion, 60,60a...conductive member, 70...first semiconductor portion, 80...insulating layer, 100...light-emitting device, 100R...red light source, 100G...green light source, 100B...blue light source, 200...light-emitting device, 700...projector, 702R...first optical element, 702G...second optical element, 702B...third optical element, 704R...first light modulation device, 704G...second light modulation device, 704B...third light modulation device, 706...cross dichroic prism, 708...projection device, 710...screen, 800...display, 810...circuit board, 812...display area, 814...data line drive circuit, 816...scanning line drive circuit, 818...control circuit, 820...lens array, 822...lens, 830...heat sink, 900...head mounted display, 910a...first display unit, 910b...second display unit, 911...image forming device, 912...external member, 913...light modulation device, 914...projection device, 915...light guiding device , 916...image light guide member, 917...reflective layer, 918...transparent member, 920...frame, 930a...first temple, 930b...second temple

Claims

1. A substrate; a first semiconductor portion having a first conductivity type; a first columnar section and a second columnar section, each of which has a second semiconductor section having a second conductivity type different from the first conductivity type, a third semiconductor section having the first conductivity type and provided between the first semiconductor section and the second semiconductor section, and a quantum well layer provided between the second semiconductor section and the third semiconductor section; a first electrode provided between the first columnar section and the substrate; a second electrode provided between the second columnar section and the substrate; a conductive member that electrically connects the second electrode and the first semiconductor portion; and the first columnar section and the second columnar section each protrude from the first semiconductor section toward the substrate, the second semiconductor portion is provided between the substrate and the quantum well layer, the first electrode is electrically connected to the second semiconductor portion of the first columnar portion, the second electrode is electrically connected to the third semiconductor portion of the first columnar portion via the conductive member and the first semiconductor portion.

2. In claim 1, A light emitting device, wherein the height of the first columnar section and the height of the second columnar section are the same.

3. In claim 1 or 2, A light emitting device having an insulating layer covering a side surface of the first columnar section.

4. In any one of claims 1 to 3, The light-emitting device, wherein the conductive member is made of platinum.

5. In any one of claims 1 to 4, A light-emitting device, wherein the height of the first electrode and the height of the second electrode are the same.

6. In any one of claims 1 to 5, A light emitting device, wherein the number of the first columnar portions is equal to or greater than the number of the second columnar portions.

7. A projector comprising the light emitting device according to claim 1 .

8. A display comprising a light-emitting device according to any one of claims 1 to 6.

9. A head-mounted display comprising the light-emitting device according to claim 1 .

Images