Semiconductor manufacturing device and method for manufacturing semiconductor device

Abstract

To provide a technique capable of checking a die separation state during production in a semiconductor manufacturing device.SOLUTION: A semiconductor manufacturing device comprises a separation unit provided below a dicing tape, a camera provided below the dicing tape and near the separation unit, and a control device. The control device is configured so as to separate the dicing tape from at least a part of a die by the separation unit, acquire an image by shooting a rear surface of the die from which the dicing tape was separated through the dicing tape by the camera, and check the separation state from the dicing tape of the die on the basis of the image.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present disclosure relates to semiconductor manufacturing equipment and is applicable, for example, to a die bonder that checks the die peeling state. [Background technology]

[0002] Semiconductor manufacturing equipment such as die bonders are devices that use a bonding material to bond (place and adhere) an element onto a substrate or element. The bonding material is, for example, a liquid or film-like resin or solder. The element is, for example, a die or electronic component such as a semiconductor chip, a MEMS (Micro Electro Mechanical System), or a glass chip. The substrate is, for example, a wiring board, a lead frame formed of a thin metal plate, a glass substrate, or the like.

[0003] For example, the die bonding process using a die bonder includes a peeling process in which dies separated from a semiconductor wafer (hereinafter simply referred to as a wafer) are peeled off from the dicing tape. The dicing tape is held by a wafer ring and carried into the die bonder. In the peeling process, the dies are pushed up from the back side of the dicing tape by a push-up unit, and peeled off one by one from the dicing tape held in the wafer supply unit, and the dies are picked up using a suction nozzle such as a collet provided on a pickup head or bond head. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2021-158166 A Summary of the Invention [Problem to be solved by the invention]

[0005] In order to stabilize the pickup, it is necessary to control the amount of the die peeled off from the dicing tape. For example, when the die is peeled off from the dicing tape by a peeling unit such as a push-up unit and the peeled state of the die from the dicing tape (die peeled state) is checked, the wafer ring holding the dicing tape with the peeled die is carried out from the semiconductor manufacturing equipment. Then, the back surface of the die may be photographed to check the die peeled state.

[0006] The object of the present disclosure is to provide a technique capable of checking the state of die peeling in a semiconductor manufacturing device. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] A brief summary of representative aspects of this disclosure is as follows. That is, the semiconductor manufacturing apparatus includes a peeling unit provided below a dicing tape, a camera provided below the dicing tape and in the vicinity of the peeling unit, and a control device. The control device is configured to peel the dicing tape from at least a portion of the die by the peeling unit, capture an image of the back surface of the die from which the dicing tape has been peeled off through the dicing tape by the camera, and confirm a peeled state of the die from the dicing tape based on the image. Effect of the Invention

[0008] According to the present disclosure, it is possible to check the die peeling state in a semiconductor manufacturing device. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. [Diagram 2] FIG. 2 is a diagram for explaining a schematic configuration when viewed from the direction of arrow A in FIG. [Diagram 3]FIG. 3 is a schematic cross-sectional view showing a main part of the wafer supply unit shown in FIG. [Figure 4] FIG. 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Diagram 5] Fig. 5(a) is a schematic top view of the peeling unit shown in Fig. 3. Fig. 5(b) is a cross-sectional view of the main part of the peeling unit shown in Fig. 5(a) in a state where the peeling unit is in contact with a dicing tape. Fig. 5(c) is a cross-sectional view of the main part of the peeling unit shown in Fig. 5(a) in a state where the block is pushed up. [Figure 6] FIG. 6 is a diagram showing the configuration of a main part of the wafer supply unit shown in FIG. 3 and a peeled state. [Figure 7] 7(a) shows an image of the peeling unit and die in the second state when peeling is insufficient, and FIG 7(b) shows an image of the peeling unit and die in the second state when peeling is sufficient. [Figure 8] Figure 8(a) shows an image when the die peeling is non-uniform. Figure 8(b) shows an image when the unpeeled region is misaligned in the x direction. Figure 8(c) shows an image when the unpeeled region is misaligned in the y direction. Figure 8(d) shows an image when the unpeeled region is misaligned in the θ direction. [Figure 9] FIG. 9 is a diagram showing a configuration of a main part of a wafer supply unit in the first modified example. [Figure 10] Fig. 10(a) is a top view showing the main configuration of a wafer supply section in the second modified example, and Fig. 10(b) is a cross-sectional view showing the main configuration of a wafer supply section in the second modified example. [Figure 11] FIG. 11 is a diagram showing the configuration of a main part of a wafer supply unit in the third modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments and modifications will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that, in order to make the description clearer, the width, thickness, shape, etc. of each part may be shown in a schematic manner compared to the actual embodiment. Furthermore, the dimensional relationship between each element, the ratio of each element, etc. do not necessarily match between multiple drawings.

[0011] The configuration of a die bonder as an embodiment of a semiconductor manufacturing apparatus will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. Fig. 2 is a diagram explaining the schematic configuration as seen from the direction of arrow A in Fig. 1. Fig. 3 is a schematic cross-sectional view showing a main part of a wafer supply unit shown in Fig. 1.

[0012] The die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y direction is the front-rear direction of the die bonder 1, the X direction is the left-right direction, and the Z direction is the up-down direction. The wafer supply unit 10 is disposed on the front side of the die bonder 1, and the bonding unit 40 is disposed on the rear side.

[0013] The wafer supply section 10 includes a wafer cassette lifter 11 , a wafer holder 12 , a peeling unit 13 , a wafer recognition camera 14 , and an undervision camera 15 .

[0014] A wafer cassette lifter 11 moves a wafer cassette (not shown), in which a plurality of wafer rings WR are stored, up and down to the wafer transport height. A wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0015] The wafer holder 12 has an expand ring 121 that holds the wafer ring WR, and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. The peeling unit 13 and the undervision camera 15 are disposed inside the support ring 122.

[0016] A wafer W is attached (pasted) onto a dicing tape DT, and the wafer W is divided into multiple dies D. The dicing tape DT is transparent to visible light. A film-like adhesive material DF called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated.

[0017] The wafer holder 12 is moved in the XY directions by a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates or moves the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 moves in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0018] The wafer recognition camera 14 detects the pick-up position of the die D picked up from the wafer W and inspects the surface of the die D. The undervision camera 15 checks the die peeling state.

[0019] The pickup unit 20 has a pickup head 21 and a Y drive unit 23. The pickup head 21 is provided with a collet 22 that suction-holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pickup head 21 in the Y-axis direction. The pickup unit 20 has each drive unit (not shown) that raises and lowers, rotates, and moves the pickup head 21 in the X direction.

[0020] The intermediate stage unit 30 has an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has suction holes that adsorb the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed, and a pick-up stage on which the die D is picked up.

[0021] The bonding section 40 has a bond head 41, a Y drive section 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that suction-holds the die D at its tip. The Y drive section 43 moves the bond head 41 in the Y-axis direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) on the substrate S and recognizes the bond position. Here, the substrate S has a plurality of product areas (hereinafter referred to as package areas P) that will eventually become one package. A position recognition mark is provided for each package area P. When the die D is placed on the substrate S, the bond stage 46 is raised and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum-suctioning the substrate S, and can fix the substrate S. The bond stage 46 has a heating section (not shown) for heating the substrate S. The bonding section 40 has various drive sections (not shown) for raising and lowering, rotating, and moving the bond head 41 in the X direction.

[0022] With this configuration, the bond head 41 corrects the pick-up position and attitude based on the imaging data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the imaging data of the substrate recognition camera 44, or bonds the die D by stacking it on top of a die already bonded onto the package area P of the substrate S.

[0023] The transport section 50 has a transport claw 51 that grips and transports the substrate S, and a transport lane 52 along which the substrate S moves. The substrate S moves in the X direction by driving a nut (not shown) of the transport claw 51 provided on the transport lane 52 by a ball screw (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply section 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading section 70 and hands the substrate S over to the substrate unloading section 70.

[0024] The substrate supplying section 60 removes the substrate S, which has been stored in the transport jig and carried in, from the transport jig and supplies it to the transporting section 50. The substrate unloading section 70 stores the substrate S transported by the transporting section 50 in the transport jig.

[0025] The control unit 80 includes a storage device that stores programs (software) and data for monitoring and controlling the operation of each part of the die bonder 1, a central processing unit (CPU) that executes the programs stored in the storage device, and an input / output device (not shown). The input / output device includes an image capture device (not shown), a motor control device (not shown), an I / O signal control device (not shown), and the like. The image capture device captures image data from the wafer recognition camera 14, the undervision camera 15, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the drive unit of the wafer supply unit 10, the drive unit of the pickup unit 20, the drive unit of the bonding unit 40, and the like. The I / O signal control device captures various sensor signals and controls signal units such as switches for lighting devices and the like.

[0026] A part of the manufacturing process of a semiconductor device using the die bonder 1 (a method for manufacturing a semiconductor device) will be described with reference to Fig. 4. Fig. 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Fig. 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

[0027] (Wafer loading process: process S1) The wafer ring WR is supplied to the wafer cassette of the wafer cassette lifter 11. The supplied wafer ring WR is then supplied to the wafer holder 12. The wafer W is previously inspected for each die by an inspection device such as a prober, and wafer map data indicating whether the die is good or bad is generated. This wafer map data is stored in a storage device of the control unit 80.

[0028] (Substrate loading process: Process S2) The transport jig storing the substrate S is supplied to the substrate supply section 60. In the substrate supply section 60, the substrate S is taken out of the transport jig and fixed to the transport claws 51.

[0029] (Pickup process: process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder, and the die is positioned. Note that the die position reference point is previously held at a predetermined position of the wafer holder 12 as the initial setting of the device. The image data is processed to inspect the surface of the die D.

[0030] The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pick-up head 21. The die D peeled off from the dicing tape DT is attracted to and held by a collet 22 provided on the pick-up head 21, and is transported to and placed on the intermediate stage 31.

[0031] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the positioning and surface inspection of the die D are performed based on the image data acquired by photographing. The image data is subjected to image processing to calculate the amount of deviation (X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder, and positioning is performed. Note that the die position reference point is previously held at a predetermined position of the intermediate stage 31 as the initial setting of the device. The image data is subjected to image processing to perform surface inspection of the die D.

[0032] The pickup head 21 that transported the die D to the intermediate stage 31 is returned to the wafer supply unit 10. The next die D is peeled off from the dicing tape DT according to the above-mentioned procedure, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0033] (Bond process: Process S4) The substrate S is transported to the bond stage 46 by the transport unit 50. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired by the image capture. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device.

[0034] The suction position of the bond head 41 is corrected based on the deviation of the die D on the intermediate stage 31 calculated in step S3, and the die D is suctioned by the collet 42. The bond head 41, which has sucked the die D from the intermediate stage 31, bonds the die D to a predetermined location of the substrate S supported by the bond stage 46. Here, the predetermined location of the substrate S is the package area P of the substrate S, or an area where an element is already placed and an element is to be bonded in addition to the already placed element, or a bonding area of ​​an element to be laminated and bonded. The substrate recognition camera 44 photographs the die D bonded to the substrate S, and an inspection is performed based on image data acquired by photographing to determine whether the die D has been bonded at the desired location, etc.

[0035] After bonding the die D to the substrate S, the bond head 41 is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until a die D is bonded to every package area P of the substrate S.

[0036] (Substrate unloading process: Process S5) The substrate S with the die D bonded thereto is transported to the substrate unloading section 70. In the substrate unloading section 70, the substrate S is removed from the transport claws 51 and stored in a transport jig. The transport jig storing the substrate S is unloaded from the die bonder 1.

[0037] As described above, the die D is mounted on the substrate S and is carried out from the die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, and the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, and the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0038] In the case of stacked bonding, following the wire bonding process, a transport jig on which a substrate S on which a die D is mounted is loaded and stored is transported into a die bonder, and the die D is stacked on the die D mounted on the substrate S. Then, after being transported out of the die bonder, the die D is electrically connected to the electrodes of the substrate S via Au wires in a wire bonding process. The dies D above the second stage are peeled off from the dicing tape DT by the above-mentioned method, transported to the bonding section, and stacked on the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process, and a stacked package is completed by sealing the multiple dies D and the Au wires with molding resin (not shown).

[0039] The configuration and operation of the peeling unit 13 will be described with reference to Fig. 5(a) to Fig. 5(c). Fig. 5(a) is a schematic top view of the peeling unit shown in Fig. 3. Fig. 5(b) is a cross-sectional view of the main part of the peeling unit shown in Fig. 5(a) in a state where the peeling unit is in contact with the dicing tape. Fig. 5(c) is a cross-sectional view of the main part of the peeling unit shown in Fig. 5(a) in a state where the block is pushed up.

[0040] 5(a), the peeling unit 13 has a block section 131 having a plurality of blocks 131a to 131d, and a dome head 132 having a plurality of suction holes (not shown) for adsorbing the dicing tape DT. The four blocks 131a to 131d can be moved up and down independently by the control section 80. The planar shapes of the concentric rectangular blocks 131a to 131d are configured to match the shape of the die D.

[0041] The pick-up operation starts when the target die D on the dicing tape DT is positioned in the peeling unit 13, and the collet 22 of the pick-up head 21 is positioned on the die D. As shown in FIG. 5(b), when the positioning is completed, the dicing tape DT is attracted to the upper surface of the peeling unit 13 by vacuuming through suction holes and gaps (not shown) in the peeling unit 13. At this time, the upper surfaces of the blocks 131a to 131d are at the same height (initial position) as the upper surface of the dome head 132. In this state, a vacuum is supplied from a vacuum supply source, and the collet 22 descends toward the device surface (upper surface) of the die D while vacuuming, and lands on the upper surface of the die D.

[0042] After that, the blocks 131a to 131d are pushed up at the same time, and the peeling unit 13 is put into the first state (PU1). In the first state (PU1), the blocks 131a to 131d are in contact with the dicing tape DT. After that, the blocks 131b to 131d are pushed up at the same time, and the peeling unit 13 is put into the second state (PU2). In the second state (PU2), the blocks 131b to 131d are in contact with the dicing tape DT. After that, the blocks 131c and 131d are pushed up at the same time, and the peeling unit 13 is put into the third state (PU3). In the third state (PU3), the blocks 131c and 131d are in contact with the dicing tape DT. After that, as shown in FIG. 5(c), the block 131d is pushed up, and the block portion 131 is made pyramidal, and the peeling unit 13 is put into the fourth state (PU4). The fourth state (PU4) is a state in which the block 131d is in contact with the dicing tape DT. In the present disclosure, this operation is referred to as an MS (Multi Step) operation.

[0043] The peeling unit 13 can also perform the following operations in addition to the above-mentioned MS operation. The blocks 131a to 131d are pushed up at the same time, and the peeling unit 13 is put into the first state (PU1). In the first state (PU1), the blocks 131a to 131d are in contact with the dicing tape DT. Thereafter, the block 131a is lowered, and the peeling unit 13 is put into the second state (PU2). In the second state (PU2), the blocks 131b to 131d are in contact with the dicing tape DT. Thereafter, the block 131b is lowered, and the peeling unit 13 is put into the third state (PU3). In the third state (PU3), the blocks 131c and 131d are in contact with the dicing tape DT. Thereafter, the block 131c is lowered, and the block portion 131 is made pyramidal, and the peeling unit 13 is put into the fourth state (PU4). The fourth state (PU4) is a state in which the block 131d is in contact with the dicing tape DT. In the present disclosure, this operation is referred to as an RMS (Reverse Multi Step) operation.

[0044] During the MS operation or RMS operation, the die D remains sandwiched between the collet 22 and all or part of the block portion 131. By providing steps between multiple blocks, such as by making the block portion 131 pyramidal, the dicing tape DT is peeled off from the die D by the tension of the dicing tape DT. In the state shown in Fig. 5(c), the dicing tape DT is adhered to the die D only at the points where the blocks 131d are in contact with the dicing tape DT.

[0045] Thereafter, the collet 22 is pulled upward and the block 131d is pulled down, whereby the die D is completely peeled off from the die-sealing tape DT and picked up.

[0046] The first state (PU1), second state (PU2), third state (PU3) and fourth state (PU4) in the MS operation and the RMS operation are performed by a plurality of step operations of the separation unit 13. Based on a time chart recipe (pickup recipe), the control unit 80 controls the motors and the like that drive each of the blocks 131a to 131d. Here, in the time chart recipe, the operation of each of the blocks 131a to 131d is set for each block and for each step in terms of the step time, the speed of the block rising or falling, the height (position) of the block, and the like. As a result, the separation unit 13 performs the step operation.

[0047] The confirmation of the die peeling state in the wafer supply section will be explained with reference to Fig. 2, Fig. 5(b), Fig. 5(c) and Fig. 6. Fig. 6 is a diagram showing the main components of the wafer supply section shown in Fig. 3 and an example of an image showing the die peeling state. The x-axis and y-axis shown in image IM in Fig. 6 correspond to the X-axis and Y-axis of the die bonder 1.

[0048] 2, undervision camera 15 is disposed to the side of peeling unit 13, does not interfere with peeling unit 13, and is fixed within the movable range of wafer holder 12. Undervision camera 15 is disposed facing upward so as to capture an image above it, and its optical axis is aligned along the Z direction. For this image capture, it is preferable to use oblique lighting in which illumination light is irradiated from a direction inclined with respect to the optical axis of undervision camera 15.

[0049] In this embodiment, the die peeling state is checked when setting the conditions of the device before the die bonder 1 is operated continuously (before production is started). Alternatively, during the continuous operation (during production) of the die bonder 1, for example, when a new wafer ring WR is loaded onto the wafer holder 12, the die peeling state is checked. During the continuous operation, the die peeling state may be checked every time the wafer ring WR is loaded between the above-mentioned steps S1 and S3, or may be checked once for each multiple loading of the wafer ring WR. The multiple times may be a predetermined number of times or an arbitrary number of times. During the continuous operation, it is preferable to check the die peeling state using a die that is determined to be defective by the wafer map data. In this case, it is preferable to use a die that is not located at the edge of the wafer as the die for checking the die peeling state. The sequence will be described below.

[0050] First, the control unit 80, for example, by the above-mentioned pick-up operation, sets the peeling unit 13 to the fourth state (PU4) as shown in FIG. 5(c), and pushes up the block portion 131 to partially peel off the dicing tape DT from the die D.

[0051] Next, the control unit 80 returns the peeling unit 13 from the fourth state (PU4) shown in FIG. 5(c) to the initial state shown in FIG. 5(b).

[0052] 6, the control unit 80 retracts the peeling unit 13 downward. Then, the control unit 80 moves the wafer holder 12 to position the die (peeled die Dp) from which the dicing tape DT has been partially peeled off by pushing up, above the undervision camera 15. In this case, the collet 22 of the pickup head 21 is also retracted upward.

[0053] Next, the control unit 80 captures an image IM of the peeling die Dp through the dicing tape DT using the undervision camera 15. The image IM is an image of a peeling trace including a peeled region PLD where the peeling die Dp is peeled from the dicing tape DT and an unpeeled region UPL where the peeled die Dp is not peeled.

[0054] The above-mentioned sequence makes it possible to check the die peeling state without transferring the wafer. Transferring the wafer means transferring the wafer ring WR holding the dicing tape DT having the peeling die Dp and the like into and out of the die bonder 1.

[0055] Next, the control unit 80 performs image processing on the image IM captured by the undervision camera 15 to separate the peeled region PLD from the unpeeled region UPL and confirm the die peeled state. For example, the control unit 80 confirms the die peeled state based on the positional relationship between the unpeeled region UPL and the four outer ends OP of the outermost block in contact with the dicing tape DT among the block unit 131.

[0056] By setting the peeling unit 13 in the second state (PU2), it becomes possible to check the die peeling state based on the positional relationship between the four outer ends OP of the block 131b and the unpeeled area UPL. By setting the peeling unit 13 in the third state (PU3), it becomes possible to check the die peeling state based on the positional relationship between the four outer ends of the block 131c and the unpeeled area UPL. By setting the peeling unit 13 in the fourth state (PU4), it becomes possible to check the die peeling state based on the positional relationship between the four outer ends of the block 131d and the unpeeled area UPL.

[0057] The actual image IM is not an image with high contrast between the peeled region PLD and the unpeeled region UPL as shown in Fig. 6, but is a faint image with low contrast. Therefore, in checking the die peeling state, the control unit 80 smoothes the image IM, and performs edge detection processing in the band area of ​​the image from which noise has been removed by the smoothing processing, to separate the peeled region PLD and the unpeeled region UPL and detect peeling marks.

[0058] For the smoothing process, a smoothing filter is applied once or multiple times. For example, when a 5×5 filter or a 7×7 filter is used, it may be applied once, but when a 3×3 filter is used, it is preferable to apply the filter multiple times.

[0059] Edge detection in a band area (band-like edge detection) is edge detection performed on multiple pixels, not on a single pixel. Normally, edge detection is derived from the change in shading on a line, so the inspection width is one pixel, but for the purpose of noise removal, if the edge length is sufficiently long, the inspection width may be set to multiple pixels and averaged to determine the edge. For this reason, it is effective when the target image is rectangular, and edges of, for example, about 10 pixels are detected for each side, and each detected edge is extended to set a rectangular area. The shape of the unpeeled area UPL is rectangular following the shape of the block in a plan view.

[0060] After checking the die peeling state, the control unit 80 can use the image IM to judge whether the pick-up recipe is appropriate or to correct or warn the pick-up recipe itself. This will be described with reference to Figs. 7(a) and 7(b). Fig. 7(a) is a diagram showing an image of the peeling unit in the second state and when die peeling is insufficient. Fig. 7(b) is a diagram showing an image of the peeling unit in the second state and when die peeling is sufficient. In Figs. 7(a) and 7(b), the block 131a is located between the top surface of the dome head 132 and the top surfaces of the blocks 131b to 131d.

[0061] The control unit 80 determines that the die is completely peeled (sufficient die peeling) when the boundary between the peeled area PLD and the unpeeled area UPL is equal to or smaller than the outer periphery of the block formed by the four outer ends OP of the block abutting the dicing tape DT, as shown in Figure 7(b).

[0062] The control unit 80 determines that the die peeling is insufficient when the boundary between the peeled region PLD and the unpeeled region UPL is larger than the outer periphery of the block, as shown in Fig. 7(a). If the die peeling is insufficient, the pickup recipe may be modified as described below.

[0063] In MS operation, the block height and the pickup timer time are increased immediately before shooting.

[0064] In the RMS operation, the block height to which all blocks rise in the step to change to the first state (PU1) is increased, or the block height to which the block immediately before shooting is lowered (the block height of block 131a in FIG. 7(a)), or the time of the pickup timer is increased, or these may be combined.

[0065] In RMS operation, the priority is decided between high speed and low stress, and the pickup recipe modification is selected based on that. If high speed is prioritized, the thrust height is increased or the pickup timer time is decreased, or both are implemented. If low stress is prioritized, the thrust height is decreased or the pickup timer time is increased, or both are implemented.

[0066] When the peeled region PLD (unpeeled region UPL) is not uniform in the x, y, and θ directions, the control unit 80 can correct the position of the mechanism from the die peeled state. This will be described with reference to Figs. 8(a) to 8(d). Fig. 8(a) is a diagram showing an image when the die peeling is non-uniform. Fig. 8(b) is a diagram showing an image when the unpeeled region is misaligned in the x direction. Fig. 8(c) is a diagram showing a case when the unpeeled region is misaligned in the y direction. Fig. 8(d) is a diagram showing an image when the unpeeled region is misaligned in the θ direction.

[0067] As shown in FIG. 8(a), when the unpeeled region UPL is positioned unevenly with respect to the block outer circumference OP (when the die peeling is uneven), the control unit 80 determines that the height of the block abutting the dicing tape DT in the region surrounded by the ellipse is lower than the setting. In other words, it determines that the block portion 131 is tilted and rising. This makes it possible to diagnose the normality of the block flatness. When the control unit 80 determines that the block portion 131 is tilted, it may issue a warning.

[0068] When the boundary between the peeled region PLD and the unpeeled region UPL is equal to the size of the block outer periphery, the control unit 80 can confirm the amount of positional deviation of the block portion 131 with respect to the die D. When the unpeeled region UPL is confirmed to be shifted in the (+) direction of the y axis with respect to the original block outer periphery OPa as shown in FIG. 8(b), the control unit 80 determines that the block portion 131 is shifted in the (+) direction of the Y axis. When the unpeeled region UPL is confirmed to be shifted in the (-) direction of the x axis with respect to the original block outer periphery OPa as shown in FIG. 8(c), the control unit 80 determines that the block portion 131 is shifted in the (+) direction of the X axis. When the unpeeled region UPL is confirmed to be shifted in the (+) direction of the θ with respect to the original block outer periphery OPa as shown in FIG. 8(d), the control unit 80 determines that the block portion 131 is shifted in the (-) direction of the θ. Control unit 80 calculates the amount of misalignment, and corrects the positional relationship between wafer holder 12 and separation unit 13 based on the calculated amount of misalignment. For example, the position and attitude of wafer holder 12 may be corrected, or the position and attitude of separation unit 13 may be corrected.

[0069] According to the embodiment, it is possible to check the die peeling state in a semiconductor manufacturing device such as a die bonder. This makes it possible to judge the acceptability of a pick-up recipe, malfunction of a peeling unit, etc. based on the die peeling state.

[0070] Furthermore, according to the embodiment, it is possible to check the die peeling during each step of the multi-stage push-up using multiple blocks.

[0071] Moreover, according to the embodiment, the peeling conditions of the pick-up recipe can be optimized, and cracking or chipping of the die during pick-up can be prevented. This makes it possible to accommodate pick-up of thinner dies. For example, in order to promote high-density packaging of semiconductor devices, stacked packages in which multiple dies are three-dimensionally mounted on a wiring board have been put to practical use. When assembling such stacked packages, so-called thin dies processed to a thickness of about several tens of μm are used. It is possible to accommodate pick-up of such thin dies.

[0072] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned example and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0073] (First Modification) FIG. 9 is a diagram showing a configuration of a main part of a wafer supply unit in the first modified example.

[0074] In the embodiment, an example in which the undervision camera 15 is fixed and disposed has been described. In contrast, the undervision camera 15 in the second modified example is provided to be movable between a position above the peeling unit 13 and a position where it does not interfere with the peeling unit 13. The control unit 80 retreats the peeling unit 13 to a position below where it does not interfere with the undervision camera 15, and moves the undervision camera 15 itself to the position of the peeling die Dp. As in the embodiment, it is preferable to use oblique lighting in which illumination light is irradiated from a direction inclined with respect to the optical axis of the undervision camera 15 for photographing by the undervision camera 15. Since the control unit 80 does not need to move the wafer holder 12 to move the peeling die Dp, it is not necessary to retreat the collet 22 of the pickup head 21 upward. As a result, the peeling die Dp can be photographed while being adsorbed by the collet 22, so that it is possible to prevent the peeling die Dp from reattaching to the dicing tape DT during photographing.

[0075] (Second Modification) Fig. 10(a) is a top view showing the main configuration of the wafer supply unit in the second modified example. Fig. 10(b) is a cross-sectional view showing the main configuration of the wafer supply unit in the second modified example. In Fig. 10(a), the dicing tape DT and the peeling die Dp are omitted.

[0076] The dome head 132 of the peeling unit 13 in the second modified example is made of a transparent material. The undervision camera 15 is installed at a position where the optical axis of the undervision camera 15 is tilted with respect to the Z direction to photograph the back surface of the peeling die Dp from diagonally below. One undervision camera 15 is disposed facing one side of the peeling die Dp. Two undervision cameras 15 may be disposed facing two adjacent sides of the peeling die Dp. Four undervision cameras 15 may be disposed facing the four sides of the peeling die Dp.

[0077] With this configuration, after the block part 131 is pushed up, it is possible to check the die peeling state of the peeling die Dp without retracting the peeling unit 13 downward or releasing the peeling die Dp from the collet 22. Therefore, it is possible to check the die peeling state even during a pick-up operation during production. Also, as in the first modified example, since the peeling die Dp can be photographed while being adsorbed by the collet 22, it is possible to prevent the peeling die Dp from reattaching to the dicing tape DT during photography.

[0078] (Third Modification) FIG. 11 is a diagram showing the configuration of a main part of a wafer supply unit in the third modified example.

[0079] The dome head 132 of the peeling unit 13 in the third modified example is made of a transparent material. The undervision camera 15 is disposed in the same manner as in the embodiment. Furthermore, an optical reflection mechanism 16a such as a prism or a mirror is installed above the undervision camera 15 and below the dicing tape DT. The optical reflection mechanism 16a has a reflection surface at an angle of approximately 45 degrees to the optical axis of the undervision camera 15. Furthermore, an optical reflection mechanism 16b is provided inside the dome head 132. The optical reflection mechanism 16b has a reflection surface at an angle of less than 45 degrees to the upper surface of the dome head 132. One undervision camera 15 is disposed facing one side of the peeling die Dp.

[0080] Two undervision cameras 15 may be disposed facing two adjacent sides of the peeling die Dp. Two sets of optical reflection mechanisms 16a, 16b are provided corresponding to the two undervision cameras 15. Four undervision cameras 15 may be disposed facing four sides of the peeling die Dp. Four sets of optical reflection mechanisms 16a, 16b are provided corresponding to the four undervision cameras 15.

[0081] With this configuration, after the block part 131 is pushed up, it is possible to check the die peeling state of the peeling die Dp without retracting the peeling unit 13 downward or releasing the peeling die Dp from the collet 22. Therefore, it is possible to check the die peeling state even during a pick-up operation during production. Also, as in the first modified example, since the peeling die Dp can be photographed while being adsorbed by the collet 22, it is possible to prevent the peeling die Dp from reattaching to the dicing tape DT during photography.

[0082] The disclosure made by the present inventors has been specifically described above based on embodiments and modified examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and modified examples, and various modifications are possible.

[0083] For example, in the embodiment, an example in which the number of blocks is four has been described, but the number of blocks may be three or less or five or more depending on the die size.

[0084] In the embodiment, the multiple blocks of the peeling unit are described as being concentric rectangular, but they may be concentric circular or elliptical, or may be configured by arranging rectangular blocks in parallel.

[0085] In the embodiment, the example in which the separation unit pushes up the multiple blocks to separate the substrate has been described. However, the blocks may be slid to separate the substrate.

[0086] In addition, in the embodiment, an example in which a die attach film is used has been described, but it is also possible to provide a preform portion for applying an adhesive to the substrate and not use a die attach film.

[0087] In the embodiment, a die bonder has been described in which a pick-up head picks up a die from a wafer supply unit, places it on an intermediate stage, and bonds the die placed on the intermediate stage to a substrate with a bonding head. However, the present invention is not limited to this, and can be applied to a die bonding device that picks up a die from a die supply unit.

[0088] For example, the present invention can also be applied to a die bonder that does not have an intermediate stage and a pick-up head, and that bonds a die from a wafer supply section to a substrate with a bonding head.

[0089] The present invention can also be applied to a flip chip bonder that does not have an intermediate stage, picks up a die from a wafer supply unit, rotates the die pickup head upward, and delivers the die to the bonding head, which then bonds the die to a substrate.

[0090] In the embodiment, a die bonder has been described as an example, but the present invention can also be applied to a semiconductor manufacturing device that places a picked-up die on a tray. [Explanation of symbols]

[0091] 1. Die bonder (semiconductor manufacturing equipment) 12 Wafer holder 13. Peeling unit 15. Undervision camera (camera) 80... Control unit (control device) D...Die Dp...Peeling die W···Wafer WR···Wafer ring

Claims

1. a wafer holder that holds a wafer ring that holds a dicing tape to which a die separated from a wafer is attached; A peeling unit provided below the dicing tape; a camera provided below the dicing tape held on the wafer holder and in the vicinity of the peeling unit; a control device configured to, during production, peel off the dicing tape from at least a portion of the die by the peeling unit, capture an image of the back surface of the die from which the dicing tape has been peeled off through the dicing tape by the camera, and confirm a peeled state of the die from the dicing tape based on the image; A semiconductor manufacturing apparatus comprising:

2. 2. The semiconductor manufacturing apparatus according to claim 1, The control device is a semiconductor manufacturing device configured to detect peeling marks by smoothing the image and detecting edges in band areas.

3. 2. The semiconductor manufacturing apparatus according to claim 1, The control device is a semiconductor manufacturing device configured to check a peeling state of a defective die from the dicing tape based on wafer map data.

4. 3. The semiconductor manufacturing apparatus according to claim 2, The control device corrects a positional relationship between the wafer holder and the peeling unit based on the peeling mark.

5. 3. The semiconductor manufacturing apparatus according to claim 2, The control device of the semiconductor manufacturing apparatus is configured to issue a warning or set or modify operating conditions of the peeling unit based on the peeling mark.

6. 3. The semiconductor manufacturing apparatus according to claim 2, The semiconductor manufacturing apparatus further comprises an illumination device that irradiates illumination light at a predetermined angle with respect to the optical axis of the camera.

7. 6. The semiconductor manufacturing apparatus according to claim 4, The camera is disposed and fixed beside the peeling unit in the semiconductor manufacturing equipment.

8. 8. The semiconductor manufacturing apparatus according to claim 7, The semiconductor manufacturing apparatus is configured such that the control device moves the die above the camera and captures an image of the die with the camera.

9. 9. The semiconductor manufacturing apparatus according to claim 8, the peeling unit has a plurality of blocks that push up the die through the dicing tape; The control device includes: In a case where the peeling unit is operated so as to push up all of the plurality of blocks, and then to separate the plurality of blocks in contact with the dicing tape from the dicing tape in sequence from the outside, thereby peeling off the dicing tape from the die, After at least one of the blocks is separated from the dicing tape, the peeling unit is lowered; The semiconductor manufacturing equipment is configured to move the die by the wafer holder above the camera.

10. 6. The semiconductor manufacturing apparatus according to claim 4, The semiconductor manufacturing apparatus is configured such that the control device lowers the peeling unit, moves the camera below the die, and photographs the die with the camera.

11. 11. The semiconductor manufacturing apparatus according to claim 10, the peeling unit has a plurality of blocks that push up the die through the dicing tape; The control device includes: In a case where the peeling unit is operated so as to push up all of the plurality of blocks, and then to separate the plurality of blocks in contact with the dicing tape from the dicing tape in sequence from the outside, thereby peeling off the dicing tape from the die, After at least one of the blocks is separated from the dicing tape, the peeling unit is lowered; A semiconductor manufacturing device configured to move the camera below the die.

12. 2. The semiconductor manufacturing apparatus according to claim 1, the peeling unit is made of a transparent material and includes a dome head that comes into contact with the dicing tape; The camera is provided at a position where the optical axis is tilted from the vertical direction to capture the back surface of the die, The control device is a semiconductor manufacturing apparatus configured to keep the peeling unit in contact with the dicing tape and to use the camera to photograph the back surface of the die from which the dicing tape has been peeled off, through the dome head and the dicing tape.

13. 2. The semiconductor manufacturing apparatus according to claim 1, Further, a first optical reflecting mechanism is provided above the camera, the peeling unit is made of a transparent material and includes a dome head that contacts the dicing tape, and a second optical reflection mechanism provided within the dome head; The control device is a semiconductor manufacturing apparatus configured to keep the peeling unit in contact with the dicing tape and to photograph the back surface of the die from which the dicing tape has been peeled off through the dicing tape using the camera, the first optical reflection mechanism, and the second optical reflection mechanism.

14. a wafer holder that holds a wafer ring that holds a dicing tape to which a die separated from a wafer is attached; A peeling unit provided below the dicing tape; a camera provided below the dicing tape held on the wafer holder and in the vicinity of the peeling unit; a head having a collet for adsorbing the die; a control device configured to peel off the dicing tape from a portion of the die by the peeling unit, and while the collet is adsorbing the die, to capture an image of the back surface of the die from which the dicing tape has been peeled off through the dicing tape by the camera, and to confirm a peeled state of the die from the dicing tape based on the image; A semiconductor manufacturing apparatus comprising:

15. a carrying-in process of carrying the wafer ring into a semiconductor manufacturing device including a wafer holder that holds a wafer ring that holds a dicing tape to which a die separated from a wafer is attached, a peeling unit provided below the dicing tape, and a camera provided below the dicing tape; a peeling confirmation step of peeling the dicing tape from at least a portion of the die by the peeling unit, photographing a back surface of the die from which the dicing tape has been peeled off through the dicing tape by the camera to obtain an image, and confirming a peeled state of the die from the dicing tape based on the image; a pick-up step of picking up a die held by the wafer ring; a bonding step of bonding the picked-up die to a substrate or a die already bonded to a substrate; A method for manufacturing a semiconductor device comprising the steps of:

16. 16. The method of manufacturing a semiconductor device according to claim 15, The method for manufacturing a semiconductor device includes: checking a state in which a defective die is peeled off from the dicing tape based on wafer map data;

Images