Substrate drying device, substrate processing apparatus, and substrate drying method

Abstract

To provide a substrate drying device, a substrate processing apparatus, and a substrate drying method, capable of reducing a generation of a water mark of a substrate.SOLUTION: A drying device (a substrate drying device) 300 includes: a support part 32 that receives a substrate W carried-into a drying chamber 31; a driving mechanism 33 that rotates the substrate W supported by the support part 32; a supply part 34 that supplies a processing liquid onto a processed surface of the substrate W to be rotated; a shield plate 35 that includes an opposite surface 35a that is opposite to the processed surface of the substrate W; a movement mechanism 36 that moves the shield plate 35 to a direction where it is separated to the substrate W; an air supply part 37 that eliminates oxygen in an atmosphere on the processed surface of the substrate W by supplying a gas without containing oxygen to a space between the opposite surface 35a and the substrate W; a measurement part 38 that measures a film thickness of the processing liquid supplied onto the processed surface of the substrate W; and an adjustment part 42 that adjusts a gap on the basis of information indicating a film thickness measured by the measurement part 38, and a distance (a gap) between the opposite surface 35a and the processed surface that are adopted to the film thickness predetermined.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a substrate drying apparatus, a substrate processing apparatus, and a substrate drying method. [Background technology]

[0002] 2. Description of the Related Art In manufacturing processes for producing semiconductors, liquid crystal panels, and the like, substrate processing apparatuses are used that supply a processing liquid to a processing surface of a substrate, such as a wafer or liquid crystal substrate, to process the processing surface, and then clean and dry the processing surface after processing.

[0003] In the drying process of this substrate processing apparatus, patterns, for example, around memory cells and gates, may collapse and become blocked due to the spacing and structure between patterns, the surface tension of the processing liquid, etc. In particular, with the miniaturization associated with the high integration and high capacity of semiconductors in recent years, the aspect ratio, which is the ratio of the depth to the wiring width or opening width, has increased, making pattern collapse more likely to occur.

[0004] To prevent such pattern collapse, a substrate drying method has been proposed in which the rinse liquid is IPA (2-propanol: isopropyl alcohol) after rinsing with DIW (ultrapure water). This substrate drying method replaces the DIW (ultrapure water) on the substrate surface with IPA, and then the IPA is shaken off and removed from the substrate by centrifugal force generated by the high-speed rotation of the substrate, thereby drying the substrate. Since IPA has a smaller surface tension than DIW, it can reduce the possibility of pattern collapse due to surface tension when it is removed from the substrate surface.

[0005] In such a drying process, if an atmosphere containing oxygen is present in the space above the substrate surface to be processed together with the pure water, the pure water, oxygen, and silicon on the substrate surface to be processed react with each other before the rinse liquid is replaced with IPA, causing watermarks to form. This is due to three reactions between the pure water, oxygen, and silicon, so if the oxygen can be removed from the atmosphere above the substrate surface to be processed, the formation of watermarks can be suppressed.

[0006] Therefore, a circular shielding plate of the same size as the substrate or slightly larger is placed close to the substrate, and nitrogen gas is supplied between the substrate and the shielding plate to exhaust the oxygen atmosphere between the substrate and the shielding plate. At this time, IPA is supplied to the substrate from a nozzle in the center of the shielding plate. After the supply of IPA is completed, the substrate is rotated at high speed to shake off the IPA on the substrate's surface to be treated and dry the substrate. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 8-316190 Summary of the Invention [Problem to be solved by the invention]

[0008] As described above, the shielding plate is brought close to the substrate so that the distance (gap) between the shielding plate and the substrate is narrowed. However, when the rotation speed (number of rotations per unit time) of the substrate is low, the liquid film of the processing liquid supplied from the nozzle of the shielding plate onto the processing surface of the substrate becomes thick, and the processing liquid on the processing surface of the substrate may adhere to the surface of the shielding plate facing the substrate (opposing surface). In addition, the processing liquid may adhere to the opposing surface due to shaking or splashing.

[0009] As a result, even if the processing liquid on the processing surface of the substrate is shaken off and dried by rotating the substrate, the processing liquid adhering to the opposing surface of the shielding plate will re-adhere to the substrate. Such re-adhered processing liquid causes watermarks. To address this, if the shielding plate is moved away from the substrate to expand the gap, the space becomes wider, and oxygen cannot be sufficiently discharged even by supplying nitrogen gas, causing watermarks. However, it was difficult to adjust the position of the shielding plate relative to the substrate to a distance suitable for discharging oxygen while preventing adhesion of processing liquid.

[0010] An object of the embodiments of the present invention is to provide a substrate drying apparatus, a substrate processing apparatus, and a substrate drying method that can reduce the occurrence of watermarks on a substrate. [Means for solving the problem]

[0011] A substrate drying apparatus according to an embodiment of the present invention comprises a drying chamber into which a substrate is loaded, a support section which receives the substrate loaded into the drying chamber, a drive mechanism which rotates the substrate supported on the support section, a supply section which supplies a processing liquid onto a processing surface of the rotating substrate, a shielding plate having an opposing surface which faces the processing surface, a moving mechanism which moves the shielding plate in a direction towards and away from the substrate, an air supply section which removes oxygen from the atmosphere above the processing surface by supplying an oxygen-free gas to a space between the opposing surface and the substrate, a measuring section which measures the film thickness of the processing liquid supplied onto the processing surface, and an adjustment section which adjusts the distance based on information indicating the film thickness measured by the measuring section and a distance between the opposing surface and the processing surface appropriate for the predetermined film thickness.

[0012] A substrate processing apparatus according to an embodiment of the present invention includes a processing apparatus which processes a substrate by supplying a substrate processing liquid while rotating the substrate, a cleaning apparatus which cleans the substrate processed by the processing apparatus by supplying the cleaning liquid while rotating the substrate, a substrate drying apparatus as described in any one of claims 1 to 4, and a transport apparatus which transports the substrate cleaned in the cleaning apparatus with a liquid film formed thereon by the cleaning liquid supplied by the cleaning apparatus, and transports the substrate into the substrate drying apparatus.

[0013] A substrate drying method according to an embodiment of the present invention includes a processing liquid supply step in which a supply unit supplies a processing liquid onto a processing surface of a substrate rotating in a drying chamber; a film thickness measurement step in which a measurement unit measures a film thickness of the processing liquid supplied onto the processing surface; an approach step in which a moving mechanism moves a shielding plate having an opposing surface facing the processing surface in a direction approaching the substrate; an air supply step in which an air supply unit supplies an oxygen-free gas to a space between the opposing surface and the substrate, thereby eliminating oxygen in the atmosphere above the processing surface; an adjustment step in which an adjustment unit adjusts the distance based on information indicating the film thickness measured by the measurement unit and a distance between the opposing surface and the processing surface appropriate for the predetermined film thickness; and a drying step in which the processing liquid is discharged by centrifugal force caused by the rotation of the substrate. Effect of the Invention

[0014] Advantageous Effects of Invention The embodiments of the present invention can provide a substrate drying apparatus, a substrate processing apparatus, and a substrate drying method that can reduce the occurrence of watermarks on a substrate. [Brief description of the drawings]

[0015] [Figure 1] 1 is a simplified configuration diagram showing a substrate processing apparatus according to an embodiment; [Diagram 2] 2 is a configuration diagram showing a cleaning device and a drying device of the substrate processing apparatus of FIG. 1. [Diagram 3] FIG. 3 is an internal configuration diagram showing the drying device of FIG. 2. [Figure 4] FIG. 4 is an explanatory diagram showing the relationship between a film thickness and a gap. [Diagram 5] 1 is a graph showing the relationship between film thickness, gap, and number of watermarks. [Figure 6] 1A is a diagram showing the internal configuration of the drying device when a substrate is carried in (A) and when a first volatile solvent is supplied (B). FIG. [Figure 7] 1A is a diagram showing the internal configuration of the drying device when a second water-repellent solvent is supplied and a film thickness is measured, and FIG. 1B is a diagram showing the internal configuration of the drying device when a gap is adjusted. [Figure 8] FIG. 2 is an internal configuration diagram showing the drying device when drying a substrate. [Figure 9]4 is a flowchart showing a procedure of a substrate drying process according to an embodiment. [Figure 10] FIG. 13 is an internal configuration diagram showing a modified example of the second volatile solvent supply unit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. [overview] 1, the substrate processing apparatus 1 of this embodiment is a single-wafer processing apparatus having multiple chambers 1a housing various processing devices, and processes substrates W, which have been stored in a cassette (FOUP) 1b in a previous process and transported, one by one in each chamber 1a. Unprocessed substrates W are taken out of the cassette 1b one by one by a transport robot 1c, temporarily placed in a buffer unit 1d, and then transported to each chamber 1a and processed by various devices described below.

[0017] The substrate processing apparatus 1 includes a processing apparatus 110, a cleaning apparatus 120, a transport apparatus 200, a drying apparatus 300, and a control apparatus 400. The processing apparatus 110 is, for example, an etching apparatus that supplies a substrate processing liquid (for example, an aqueous phosphoric acid solution, a mixture of hydrofluoric acid and nitric acid, a mixture of acetic acid, sulfuric acid, and hydrogen peroxide (SPM: Sulfuric hydrogen peroxide mixture), etc.) to a rotating substrate W to remove unnecessary films and leave a circuit pattern. The cleaning apparatus 120 cleans the substrate W etched by the etching apparatus with a cleaning liquid C (see FIG. 2). The transport apparatus 200 transports the substrate W between the buffer unit 1d and each chamber 1a and between each chamber 1a. For example, the transport apparatus 200 transports the substrate W processed in the processing apparatus 110 to the cleaning apparatus 120, and transports the substrate W cleaned in the cleaning apparatus 120 to the drying apparatus 300. The drying apparatus (substrate drying apparatus) 300 performs a drying process by removing the cleaning liquid C by centrifugal force while rotating the substrate W cleaned with the cleaning liquid C. The control apparatus 400 controls each of the above-mentioned apparatuses.

[0018] The substrate W processed in this embodiment is, for example, a semiconductor wafer. Hereinafter, the surface of the substrate W on which a pattern or the like is formed is referred to as the processed surface. As the cleaning liquid C (see FIG. 2) for the cleaning process in the cleaning device 120, an alkaline cleaning liquid (APM) and ultrapure water (DIW) are used. APM is a chemical liquid made by mixing ammonia water and hydrogen peroxide water, and is used to remove residual organic matter. DIW is used to wash away the substrate processing liquid remaining on the processed surface of the substrate W after processing with the substrate processing liquid. Also, DIW is used to wash away the APM remaining on the processed surface of the substrate W after the APM process. After cleaning with the cleaning liquid C, a volatile solvent is used as the processing liquid in the drying device 300. First, in the drying device 300, a first volatile solvent (IPA) is used as the processing liquid to replace the cleaning liquid C. IPA has a smaller surface tension and is more volatile than DIW, so it is used to replace DIW and reduce pattern collapse due to surface tension.

[0019] Furthermore, in this embodiment, a second volatile solvent is used as the processing liquid. The second volatile solvent is a solvent that has a smaller surface tension when vaporized than the first volatile solvent. The vaporization temperature of the second volatile solvent is higher than that of the first volatile solvent. As such a second volatile solvent, PGMEA (propylene glycol monoethyl acetate) can be used. Furthermore, the second volatile solvent used contains a water repellent agent. The water repellent agent converts hydroxyl groups (-OH) on the processing surface of the substrate W into functional groups (e.g., -CH 3 , C 2 H 5 ) to form a water-repellent film (Si-OR (R: functional group)). For example, HMDS (hexamethyldisilazane), a silane coupling agent, can be used as the water-repellent agent. In the following description, the second volatile solvent is supplied in a manner that the second volatile solvent containing the water-repellent agent is supplied.

[0020] The reason why PGMEA containing HMDS is used is that HMDS easily reacts with moisture. In other words, when HMDS reacts with moisture in the air, it loses its water-repellent effect on the processing surface of the substrate W. Therefore, by mixing HMDS with PGMEA, it is possible to prevent the reaction with moisture in the air and supply it to the substrate W. In the following description, when the first volatile solvent and the second volatile solvent are not distinguished, they are simply referred to as the processing liquid.

[0021] [Cleaning equipment] 2, the cleaning apparatus 120 has a cleaning chamber 11 which is a container in which a cleaning process is performed, a support part 12 which supports the substrate W, a rotation mechanism 13 which rotates the support part 12, a cup 14 which receives the scattering cleaning liquid C from around the substrate W, and a supply part 15 which supplies the cleaning liquid C. The supply part 15 is provided with a nozzle 15a which drips the cleaning liquid C, and a movement mechanism 15b which moves the nozzle 15a.

[0022] A cleaning process is performed by supplying cleaning liquid C from nozzle 15a to the processing surface of substrate W supported by support portion 12 and rotated by rotation mechanism 13. In the cleaning process, APM is supplied to the processing surface of substrate W etched in processing device 110 to perform APM cleaning, and after the APM cleaning, a pure water rinse process is performed using DIW to wash away APM remaining on the processing surface of substrate W with pure water. As a result, the processing surface of substrate W is filled with cleaning liquid C of DIW. An opening 11a for loading and unloading substrate W is provided in cleaning chamber 11, and opening 11a is configured to be openable and closable by door 11b.

[0023] [Transportation device] The transport device 200 includes a handling device 20. The handling device 20 includes a robot hand 21 that holds the substrate W, and a moving mechanism 22. The robot hand 21 holds the substrate W. The moving mechanism 22 moves the robot hand 21. The transport device 200 transports the substrate W between the buffer unit 1d and various devices, and between various devices. For example, the substrate W that has been etched is unloaded from the processing device 110, and is loaded into the cleaning device 120 with a liquid film of the cleaning liquid (DIW) C formed on the processing surface of the substrate W. The moving mechanism 22 also moves the robot hand 21 to unload the substrate W that has been cleaned from the cleaning device 120, and is loaded into the drying device 300 with a liquid film of the cleaning liquid (DIW) C formed on the processing surface of the substrate W. The substrate W is transported with a liquid film of the cleaning liquid (DIW) C formed on the processing surface of the substrate W in order to prevent particles from adhering to the processing surface of the substrate W during transportation.

[0024] [Drying equipment] As shown in FIG. 2 and FIG. 3, the drying apparatus 300 includes a drying chamber 31, a support section 32, a driving mechanism 33, a supply section 34 (a first volatile solvent supply section 341, a second volatile solvent supply section 342), a shielding plate 35, a moving mechanism 36, an air supply section 37, a measuring section 38, and a cup 39. The drying chamber 31 is a chamber 1a into which the substrate W is carried. The drying chamber 31 is a chamber 1a for drying the substrate W therein. The drying chamber 31 is in the shape of a box, such as a rectangular parallelepiped or a cube. The inner wall of the drying chamber 31 is coated with silica to enhance dust resistance. The drying chamber 31 is provided with an opening 31a for carrying the substrate W in and out. The opening 31a is provided so as to be openable and closable by a door 31b. The drying chamber 31 accommodates a supply section 34 (a first volatile solvent supply section 341, a second volatile solvent supply section 342), a shielding plate 35, a moving mechanism 36, an air supply section 37, a measuring section 38, and a cup 39, which will be described later.

[0025] The drying chamber 31 is also provided with an inlet 31c and an exhaust port 31d. The inlet 31c is connected to piping, a valve, and a clean gas (N 2An air supply section 31e including an air supply device that supplies air (air, etc.) is connected to the exhaust port 31d. An exhaust section 31f including piping, a valve, and an exhaust device that exhausts gas is connected to the exhaust port 31d. By supplying clean gas into the drying chamber 31 from the inlet 31c, it is possible to create a normal atmosphere inside the drying chamber 31. Also, by providing a configuration in which gas is supplied into the drying chamber 31 from the inlet 31c and the gas inside the drying chamber 31 is exhausted from the exhaust port 31d, a gas flow inside the drying chamber 31 is created.

[0026] The support unit 32 supports the substrate W. The support unit 32 has a rotating table 32a, a plurality of holding members 32b, and a rotating shaft 32c. The rotating table 32a is cylindrical with a diameter larger than the substrate W, and is a disk with a flat upper surface. The plurality of holding members 32b are disposed at equal intervals along the outer periphery of the substrate W, and hold the substrate W in a horizontal state with a gap between the upper surface of the rotating table 32a and the plurality of holding members 32b. The plurality of holding members 32b are provided so as to be movable between a closed position in contact with the edge of the substrate W and an open position away from the edge of the substrate W by an opening / closing mechanism (not shown). The rotating shaft 32c is a vertical axis that supports the rotating table 32a from below and serves as the center of rotation.

[0027] The driving mechanism 33 is a mechanism for rotating the substrate W supported by the support portion 32. The driving mechanism 33 has a driving source such as a motor, and rotates the support portion 32 via a rotation shaft 32c.

[0028] The supply unit 34 supplies the processing liquid onto the processing surface of the rotating substrate W. As shown in FIG. 3, the supply unit 34 has a first volatile solvent supply unit 341 and a second volatile solvent supply unit 342. The first volatile solvent supply unit 341 supplies a first volatile solvent V onto the processing surface of the substrate W that is carried into the drying chamber 31 and supported by the support unit 32. The first volatile solvent supply unit 341 has a nozzle 341a. The nozzle 341a supplies the first volatile solvent V toward the center of the processing surface of the substrate W. IPA, which is the first volatile solvent V, is supplied to the nozzle 341a from a storage unit 341b outside the drying chamber 31 via a pipe (not shown) (see FIG. 6(B)). The nozzle 341a is arranged along the central axis of a shielding plate 35 described later, and is provided so as to be movable together with the shielding plate 35.

[0029] In the cleaning process in the cleaning apparatus 120, after the alkaline cleaning by APM and the pure water rinsing process by DIW, the processing surface of the substrate W is finally puddled with the cleaning liquid C of DIW. In this puddled state, the substrate W is carried from the cleaning apparatus 120 into the drying apparatus 300, and IPA is supplied to replace the DIW with IPA.

[0030] The second volatile solvent supply unit 342 supplies PGMEA (a solvent containing HMDS) as the second volatile solvent H to the IPA that has replaced the DIW on the processing surface of the substrate W (see FIG. 7(A)). The second volatile solvent supply unit 342 has a nozzle 342a, a swinging arm 342b, and a swinging mechanism 342c. The nozzle 342a supplies the second volatile solvent H toward the center of the processing surface of the substrate W. PGMEA is supplied to the nozzle 342a from a reservoir outside the drying chamber 31 via piping (neither shown) or the like.

[0031] By supplying the second volatile solvent H containing a water repellent agent, a water repellent film is formed on the processing surface of the substrate W, which changes the hydrophilic silanol groups of the processing surface of the substrate W to water repellent methyl groups, thereby lowering the interfacial energy on the processing surface of the substrate W, thereby floating up the first volatile solvent V and facilitating the removal of liquid on the processing surface of the substrate W. Note that the water repellency referred to here refers to the property of repelling liquid, i.e., liquid repellency, and is not limited to the property of repelling water.

[0032] The swing arm 342b has a nozzle 342a at its tip, and moves the nozzle 342a between a supply position facing the vicinity of the center of the processing surface of the substrate W on the support part 32 and a retreat position from the supply position to enable loading and unloading of the substrate W. The swing mechanism 342c is a mechanism that swings the swing arm 342b.

[0033] The shielding plate 35 faces the processing surface of the substrate W and is a plate having a diameter larger than that of the substrate W. The shielding plate 35 is circular, and its lower surface forms a flat facing surface 35a facing the substrate W. The facing surface 35a is disposed parallel to the turntable 32a and faces the substrate W supported by the support portion 32 in parallel. An opening 35b for supplying the first volatile solvent V and a purge gas is formed in the center of the facing surface 35a.

[0034] In addition, a support body 35c is provided on the upper surface of the shielding plate 35, extending upward from a position including the center of the shielding plate 35. An air passage 35d is provided inside the support body 35c, extending downward along the central axis and communicating with the opening 35b. The upper side of the air passage 35d communicates with a connection port 35e extending to the side surface of the support body 35c.

[0035] Furthermore, a nozzle 341a of a first volatile solvent supply unit 341 is inserted into the ventilation path 35d along the central axis. The lower end of the nozzle 341a reaches the opening 35b and faces the center of the substrate W, so that the first volatile solvent V can be supplied toward the center of the processing surface of the substrate W.

[0036] The moving mechanism 36 is a mechanism for moving the shielding plate 35 in a direction toward or away from the substrate W. The moving mechanism 36 moves the shielding plate 35 between a standby position and a supply position. The standby position is a height position (see FIG. 6(A)) at which the shielding plate 35 does not prevent the substrate W from being loaded or unloaded. The supply position is a height position (see FIG. 6(B)) that is lower than the standby position and at which the supply of the processing liquid to the substrate W is started. As the moving mechanism 36, various mechanisms for moving the shielding plate 35 in a direction parallel to the rotation axis 32c of the turntable 32a, such as a cylinder for raising and lowering an arm to which the support 35c of the shielding plate 35 is attached, or a ball screw mechanism, are applicable, but details will be omitted.

[0037] The gas supply unit 37 supplies a gas that does not contain oxygen to the space between the facing surface 35a and the substrate W, thereby eliminating oxygen in the atmosphere above the surface to be processed of the substrate W. The gas supply unit 37 includes a gas supply device 37a that supplies this gas (hereinafter referred to as a purge gas), and is connected to the connection port 35e via a pipe having a valve (not shown). The purge gas is N 2 An inert gas such as argon gas or the like is used. When the shielding plate 35 approaches the substrate W, a narrow space is formed between the opposing surface 35a of the shielding plate 35 and the surface to be processed of the substrate W. When a purge gas is supplied from the gas supply unit 37, the purge gas is blown out from the opening 35b through the ventilation path 35d toward the center of the substrate W, thereby removing oxygen from the narrow space. That is, as a result, oxygen present on the surface to be processed of the substrate W is removed.

[0038] The measuring unit 38 measures the film thickness of the processing liquid supplied onto the processing surface of the substrate W supported by the supporting unit 32. The measuring unit 38 is provided on the shielding plate 35. The measuring unit 38 is provided so as to be able to measure a plurality of points of the processing liquid. More specifically, the measuring unit 38 has a detecting unit 38a. For example, a laser displacement meter or a camera is used as the detecting unit 38a. A plurality of detecting units 38a are arranged along the radial direction from the center of the shielding plate 35 toward the outer periphery. For example, the detecting units 38a are embedded in three holes 35f formed at a position close to the central axis in the radial direction, a position close to the outer periphery, and an intermediate position between them so that the lower ends are open on the opposing surface 35a of the shielding plate 35. The detecting surface of the detecting unit 38a faces the substrate W from the opening of the hole 35f.

[0039] For example, the principle of optical interference can be used as a film thickness measurement method by the measuring unit 38. As another example, a weight scale can be used in the supporting unit 32. When using this weight scale, the weight of the liquid film on the processing surface of the substrate W (weight of the liquid film=weight of the substrate including the liquid film-weight of the substrate) is theoretically or experimentally converted into the thickness of the liquid film.

[0040] The cup 39 is formed in a cylindrical shape so as to surround the support part 32 (see FIG. 2). The upper part of the peripheral wall of the cup 39 is inclined radially inward and opens so as to expose the substrate W on the support part 32. The cup 39 receives the cleaning liquid C scattered from the rotating substrate W and allows it to flow downward. A drain port (not shown) is formed in the bottom surface of the cup 39 for discharging the cleaning liquid C that flows down. The cup 39 is connected to the drive mechanism 33 and is provided so as to be movable up and down together with the support part 32.

[0041] [Control device] The control device 400 is a computer that controls each part of the substrate processing apparatus 1. The control device 400 has a processor that executes a program, a memory that stores various information such as the program and operating conditions, and a drive circuit that drives each element. The control device 400 also has an input device for inputting information and a display device for displaying information.

[0042] The control device 400 controls the processing device 110, the cleaning device 120, the transport device 200, and the drying device 300. For example, while rotating the substrate W supported by the support part 32, the control device 400 replaces the liquid film of the cleaning liquid C with the first volatile solvent V by supplying the first volatile solvent V from the first volatile solvent supply part 341, replaces the first volatile solvent V supplied onto the processing surface of the substrate W with the second volatile solvent H by supplying the second volatile solvent H from the second volatile solvent supply part 342, and then discharges the liquid film of the second volatile solvent H by the centrifugal force caused by the rotation of the substrate W. As described later, the control device 400 adjusts the distance between the facing surface 35a and the processing liquid surface according to the film thickness of the processing liquid measured by the measurement part 38.

[0043] Such a control device 400 includes a mechanism control unit 41, an adjustment unit 42, and a storage unit 43. The mechanism control unit 41 controls the mechanisms of each unit. For example, the mechanism control unit 41 controls the drive mechanism 33 to control the rotation speed of the support unit 32 and the timing of starting and stopping the rotation. The mechanism control unit 41 also controls the measurement of the film thickness by the detection unit 38a and the operation of the movement mechanism 36 to change the height of the shielding plate 35 and adjust the distance between the opposing surface 35a and the surface of the processing liquid. Furthermore, the mechanism control unit 41 controls the discharge of the first volatile solvent V by the first volatile solvent supply unit 341, the oscillation of the nozzle 342a and the discharge of the second volatile solvent H by the second volatile solvent supply unit 342, the supply of purge gas by the gas supply unit 37, and other operations.

[0044] The adjustment unit 42 adjusts the gap based on information indicating the film thickness of the processing liquid measured by the measurement unit 38 (hereinafter simply referred to as film thickness) and the distance between the opposing surface 35a and the processing surface of the substrate W suitable for the predetermined film thickness (hereinafter referred to as gap). That is, the adjustment unit 42 adjusts the distance between the opposing surface 35a and the processing surface of the substrate W suitable for the film thickness of the processing liquid by raising and lowering the shielding plate 35 by the movement mechanism 36. Basically, if the gap is too narrow, the processing liquid of the substrate W comes into contact with the opposing surface 35a. As a result, when the substrate W is dried, the processing liquid attached to the opposing surface 35a falls and remains on the processing surface. When the remaining processing liquid dries, it appears as a watermark. Such watermarks are caused by droplets randomly adhering to the processing surface in spots, and therefore appear in a scattered manner. On the other hand, if the gap is too wide, oxygen is likely to enter the nitrogen atmosphere placed between the opposing surface 35a and the processing surface. This increases the number of watermarks on the treated surface, which are the result of reaction between silicon and water and oxygen.

[0045] The inventors have noticed that there is an optimal value for the gap at which the processing liquid does not adhere to the facing surface 35a, depending on the film thickness of the processing liquid. In other words, the inventors have found that there is a correlation between the gap, film thickness, and the number of watermarks that occur, and that there is a gap for a film thickness at which the number of watermarks that occur is below an allowable value. As a simple example, as shown in Figure 4(A), when the film thickness of the processing liquid L is thick, the gap G is made larger, and as shown in Figure 4(B), when the film thickness is thin, the gap G is made smaller.

[0046] However, the film thickness of the processing liquid L is not always the same for each substrate W, but varies depending on the type and temperature of the processing liquid L, the rotation speed of the substrate W, the undulation of the surface of the liquid film, and the like. Therefore, the ease with which the processing liquid adheres to the facing surface 35a varies depending on these conditions. Therefore, it is preferable to obtain in advance by experiment a gap at which the watermark is less than an allowable value for a film thickness. The memory unit 43 stores information indicating such a relationship between the film thickness and the gap. In other words, information indicating the distance between the facing surface 35a and the surface to be processed that is appropriate for the film thickness is set in advance.

[0047] FIG. 5 shows the relationship between the film thickness, the gap, and the number of watermarks. The number of watermarks referred to here is the number of watermarks formed on the substrate W, not on the facing surface 35a. When the film thickness is a small number of micrometers, the number of watermarks is smaller when the gap is smaller, such as about 3 mm (for example, 2 to 5 mm). When the gap is larger than 10 mm, the N between the facing surface 35a and the surface to be processed increases. 2 Since it becomes difficult to maintain the atmosphere, the number of watermarks tends to gradually increase. Therefore, when the film thickness is several μm, the preferable gap range between the shielding plate 35 and the substrate W is 3 to 10 mm. More preferably, if the maximum value of the measured film thickness is 10 μm or less, the gap is kept at about 3 mm. For example, if the maximum value of the film thickness is 10 μm, the gap is set to 3 mm.

[0048] On the other hand, when the film thickness is several mm, if the gap is small, such as about 3 mm (for example, 2 to 5 mm), the number of watermarks increases. This is because the liquid film on the processing surface of the substrate W comes into contact with the shielding plate 35, contaminating the substrate W. Also, when the gap is larger than 20 mm, the N between the opposing surface 35a and the processing surface increases. 2 Since it becomes difficult to maintain the atmosphere, the number of watermarks increases. Therefore, when the film thickness is several mm, the preferable gap range between the shielding plate 35 and the substrate W is 7 to 20 mm. More preferably, when the measured film thickness is 1 mm or more, the gap is kept at about 5 mm. For example, when the maximum film thickness is 3 mm, the gap is set to 8 mm. As such, when the film thickness becomes thicker, the risk of liquid splashing onto the shielding plate 35 increases, so it is necessary to make the gap wider.

[0049] Also, when the processing liquid is being supplied onto the processing surface of the substrate W and the shielding plate 35 is in close proximity to the substrate W, and the film thickness of the processing liquid is constantly being measured, the height of the shielding plate 35 is adjusted in a similar manner to that described above so that the optimum gap can always be maintained depending on whether the measured film thickness is thick or thin. In this way, by linking the film thickness measurement with the raising and lowering of the shielding plate 35, the N between the opposing surface 35a and the processing surface can be adjusted. 2 While maintaining the atmosphere, adhesion of the processing liquid to the facing surface 35a can be reduced.

[0050] Furthermore, the adjustment unit 42 adjusts the gap based on the maximum film thickness among the film thicknesses measured at multiple locations by the measurement unit 38. When the type of processing liquid is changed, when the rotation speed of the substrate W is changed, or when the processing liquid ripples, the film thickness differs depending on the location on the processing surface of the substrate W. Since adhesion to the opposing surface 35a is likely to occur at the thickest location among these locations, by adjusting the gap based on this location, it is possible to detect film thickness fluctuations early and reduce adhesion of the processing liquid.

[0051] [Operation] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the explanatory views of Figures 6 to 8 and the flowchart of Figure 9 in addition to Figures 1 to 5. Note that a substrate manufacturing method for manufacturing a substrate W by processing the substrate W in the following procedure and a substrate drying method for drying the substrate W are also aspects of this embodiment.

[0052] 2, the substrate W after etching in the processing device 110 is carried into the cleaning device 120 by the transport device 200. In the cleaning device 120, while the support part 12 holding the substrate W rotates, the supply part 15 supplies APM to the center of rotation of the processing surface of the substrate W to perform an alkali rinse process, and then supplies DIW to perform a pure water rinse process. After cleaning, the transport device 200 carries out the substrate W, which has been covered with the cleaning liquid C, which is DIW, from the cleaning device 120 and carries it into the drying device 300.

[0053] As shown in Fig. 6(A), the substrate W, which is carried in through the opening 31a of the drying chamber 31 of the drying device 300 with a liquid film of the cleaning liquid C (DIW) formed on the processing surface, is held by the holding member 32b of the support part 32 (step S01). As shown in Fig. 6(B), the driving mechanism 33 rotates the substrate W together with the support part 32, and the gas supply part 37 exhausts the purge gas from the opening 37b of the facing surface 35a (step S02). Then, the shielding plate 35 descends from the standby position to the supply position of the processing liquid (step S03), and the first volatile solvent supply part 341 supplies IPA, which is the first volatile solvent V, to the rotation center of the processing surface of the substrate W (step S04).

[0054] As a result, the IPA spreads over the entire surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and an alcohol rinse process is performed in which the DIW puddled on the surface of the substrate W is replaced with IPA. Note that, since the DIW is replaced with IPA, which has a lower surface tension than the DIW, the surface tension acting between the patterns formed on the surface of the substrate W is reduced.

[0055] 7(A), while the driving mechanism 33 rotates the substrate W together with the support part 32, the shielding plate 35 rises to the waiting position, and the swing arm 342b of the second volatile solvent supply part 342 swings, so that the nozzle 342a moves to above the rotation center of the processing surface of the substrate W, and the nozzle 342a supplies PGMEA, which is the second volatile solvent H, to the rotation center (step S05). As a result, the centrifugal force caused by the rotation of the substrate W spreads the PGMEA over the entire processing surface of the substrate W, and the HMDS contained in the PGMEA bonds to the processing surface of the substrate W to form a water-repellent film. That is, the first volatile solvent V present on the processing surface of the substrate W is replaced by PGMEA, which is the second volatile solvent H, and the hydroxyl groups on the processing surface are replaced by functional groups by the HMDS contained in the PGMEA to form a water-repellent film.

[0056] Further, as shown in FIG. 7(B), the swing arm 342b retracts the nozzle 342a from above the substrate W, and while the shielding plate 35 approaches the substrate W, the first volatile solvent supply unit 341 supplies IPA, which is the first volatile solvent V, to the center of rotation of the processing surface of the substrate W (step S06). HMDS contained in PGMEA generates particles when it reacts with moisture in the air. Therefore, if the second volatile solvent H remains, particles will remain on the processing surface of the substrate W. Therefore, in this embodiment, after the second volatile solvent H is supplied, the first volatile solvent V is supplied again onto the processing surface of the substrate W to wash away the second volatile solvent H. At the same time, the detection unit 38a of the measurement unit 38 starts measuring the film thickness on the processing surface of the substrate W (step S07).

[0057] The adjustment unit 42 refers to the film thickness and gap information stored in the memory unit 43, and operates the movement mechanism 36 via the mechanism control unit 41 to adjust the gap between the facing surface 35a of the shielding plate 35 and the substrate W so as to obtain an optimal gap based on the measured film thickness (step S08). In other words, the gap is adjusted so that the processing liquid does not adhere to the shielding plate 35 while the processing liquid is being supplied. At this time, the gas supply unit 37 supplies purge gas between the facing surface 35a and the substrate W, so that oxygen is exhausted from the atmosphere in the gap.

[0058] 8, while rotating the substrate W, a drying process is performed in which the liquid film of the first volatile solvent V is shaken off by centrifugal force until a predetermined time has elapsed (NO in step S09). During this time, the film thickness is measured by the measuring unit 38 (step S07), and the gap is adjusted by the adjusting unit 42 (step S08).

[0059] In this way, by forming a water-repellent film using the second volatile solvent H, collapse of the pattern can be reduced and the substrate W can be dried. That is, as described above, the water-repellent agent permeated into the liquid film of IPA forms a water-repellent film between the patterns, which reduces the lyophilicity and increases the contact angle of the liquid. This further reduces the surface tension of the liquid on the surface of the substrate W, weakening the force of attraction between the patterns and suppressing collapse of the patterns. In addition, the purge gas removes oxygen between the opposing surface 35a of the shielding plate 35 and the substrate W, preventing the generation of watermarks due to reaction with oxygen.

[0060] After a predetermined time has elapsed (YES in step S09), the driving mechanism 33 stops rotating the substrate W together with the support portion 32 (step S10), the shielding plate 35 rises (step S11), and the transport device 200 carries the substrate W out of the opening 31a (step S12).

[0061] [effect] (1) The drying apparatus (substrate drying apparatus) 300 of this embodiment as described above includes a drying chamber 31 into which a substrate W is loaded, a support section 32 which receives the substrate W loaded into the drying chamber 31, a drive mechanism 33 which rotates the substrate W supported by the support section 32, a supply section 34 which supplies a processing liquid onto the processing surface of the rotating substrate W, a shielding plate 35 which faces the processing surface of the substrate W and has an opposing surface 35a which has a diameter larger than that of the substrate W, a moving mechanism 36 which moves the shielding plate 35 in a direction toward and away from the substrate W, an air supply section 37 which removes oxygen from the atmosphere above the processing surface of the substrate W by supplying an oxygen-free gas to the space between the opposing surface 35a and the substrate W, a measuring section 38 which measures the film thickness of the processing liquid supplied onto the processing surface of the substrate W, and an adjustment section 42 which adjusts the gap based on the film thickness measured by the measuring section 38 and information indicating a distance (gap) between the opposing surface 35a and the processing surface suitable for a preset film thickness.

[0062] More specifically, the adjustment unit 42 adjusts the gap between the opposing surface 35a and the processing surface of the substrate W to a value suitable for a preset film thickness of the processing liquid by raising and lowering the shielding plate 35 using the movement mechanism 36.

[0063] The substrate processing apparatus 1 of this embodiment includes a processing apparatus 110 that processes a substrate W by supplying a substrate processing liquid while rotating the substrate W, a cleaning apparatus 120 that cleans the substrate W processed by the processing apparatus 110 by rotating the substrate W and supplying a cleaning liquid C thereto, a drying apparatus 300, and a transport apparatus 200 that transports the substrate W cleaned in the cleaning apparatus 120 with a liquid film formed thereon by the cleaning liquid C supplied by the cleaning apparatus 120, and transports the substrate W into the drying apparatus 300.

[0064] The substrate drying method of the present embodiment includes a processing liquid supply step in which the supply unit 34 supplies processing liquid onto the processing surface of the substrate W rotating in the drying chamber 31; a film thickness measurement step in which the measurement unit 38 measures the film thickness of the processing liquid supplied onto the processing surface of the substrate W; an approach step in which the moving mechanism 36 moves a shielding plate 35, which faces the processing surface of the substrate W and has an opposing surface 35a with a diameter larger than that of the substrate W, in a direction approaching the substrate W; an air supply step in which the air supply unit 37 supplies an oxygen-free purge gas to the space between the opposing surface 35a and the substrate W to eliminate oxygen in the atmosphere above the processing surface of the substrate W; an adjustment step in which the adjustment unit 42 adjusts the gap based on the film thickness measured by the measurement unit 38 and information indicating the distance (gap) between the opposing surface 35a and the processing surface appropriate for a predetermined film thickness; and a drying step in which the processing liquid is discharged by centrifugal force caused by the rotation of the substrate W.

[0065] In this way, the distance between the facing surface 35a and the surface of the processing liquid is adjusted according to the film thickness of the processing liquid, so that oxygen is eliminated by the purge gas and adhesion of the processing liquid to the facing surface 35a is prevented, thereby preventing the occurrence of watermarks due to the processing liquid dropping from the facing surface 35a during the drying process of the substrate W. In other words, when the processing liquid adheres to the facing surface 35a, the processing liquid drops from the facing surface 35a while the liquid film on the processing surface is being eliminated, and adheres to the processing surface being dried, and only the adhered portion remains, eventually forming watermarks due to natural drying. However, in this embodiment, the processing liquid does not adhere to the shielding plate 35 from the state in which the processing liquid is supplied while the shielding plate 35 is close to the substrate W to the state in which the processing liquid is shaken off and dried, so that the occurrence of watermarks due to the dropping of the processing liquid can be prevented.

[0066] (2) The measurement unit 38 is provided on the shielding plate 35. Therefore, while the processing liquid is being supplied onto the processing surface of the substrate W and the shielding plate 35 is in close proximity to the substrate W, the distance to the measurement target relative to the opposing surface 35a can always be accurately measured and the film thickness can be detected in real time, so that the gap can be adjusted in response to fluctuations in the film thickness to reduce adhesion of the processing liquid.

[0067] (3) The measuring unit 38 is provided so as to be able to measure the processing liquid at a plurality of points. Therefore, even if the film thickness varies across the surface of the substrate W, the optimal gap can be determined based on the measurement results at a plurality of points.

[0068] (4) The adjustment unit 42 adjusts the gap based on the maximum film thickness among the film thicknesses at multiple locations. Therefore, the gap is adjusted based on the film thickness at which the treatment liquid is most likely to adhere to the facing surface 35a, so that the gap can be adjusted to prevent adhesion of the treatment liquid.

[0069] (5) The processing liquid supply process includes a first volatile solvent supply process in which a liquid film of the cleaning liquid C is formed and the liquid film of the cleaning liquid C is replaced with the first volatile solvent V by supplying a first volatile solvent V from a first volatile solvent supply unit 341 while rotating the substrate W supported by the support unit 32 using the drive mechanism 33, and a water-repellent film formation process in which a second volatile solvent H is supplied from a second volatile solvent supply unit 342, which contains a water-repellent agent that forms a water-repellent film and has a surface tension when vaporized that is smaller than that of the first volatile solvent V, thereby replacing the liquid film of the first volatile solvent V with the second volatile solvent H and forming a water-repellent film on the substrate W.

[0070] Therefore, when the shielding plate 35 is in close proximity to the substrate W, the film thickness can be constantly measured in real time during replacement, which is a period when fluctuations in the processing liquid are likely to occur, and the gap can be adjusted to follow the film thickness fluctuations, thereby more reliably reducing adhesion of the processing liquid to the opposing surface 35a.

[0071] (Modification) (1) The measuring unit 38 may be configured such that the detecting unit 38a is provided at the tip of a swinging arm, and the detecting unit 38a moves to a position facing the processing surface of the substrate W by the swinging of the arm, and performs the measurement. In this case, the detecting unit 38a may measure a plurality of points while moving in accordance with the swinging of the arm, or the detecting unit 38a may stop intermittently. The number of the detecting units 38a is not limited to the above embodiment. There may be one, two, four or more.

[0072] (2) The first volatile solvent V is not limited to IPA. For example, HFE (hydrofluoroether) or the like can be used. The silane coupling agent as the water repellent is not limited to HMDS. For example, TMSDEA (tetramethylsilyldiethylamine) or the like can be used. The second volatile solvent H is also not limited to the above PGMEA. For example, IPA may be used.

[0073] (3) As long as the processing in the processing apparatus 110 is a process that ultimately requires cleaning and drying, the contents of the process and the substrate processing liquid are not limited to those exemplified above. The substrate W to be processed is also not limited to those exemplified above. In addition, the cleaning liquid C used in the cleaning apparatus 120 and the processing liquid used in the drying apparatus 300 are also not limited to those exemplified above. Note that the processing liquid used in the drying apparatus 300 may be any liquid that is removed from the substrate W by centrifugal force, and the cleaning liquid C may also be included in the processing liquid referred to here.

[0074] (4) The drying apparatus 300 may be shared with the cleaning apparatus 120. That is, a supply unit 15 for supplying the cleaning liquid C may be provided in the chamber 1a shared with the drying apparatus 300. As a result, the cleaning process can be performed by supplying the cleaning liquid C from the nozzle 15a to the processing surface of the rotating substrate W before the drying process. For example, the processing surface of the substrate W that has been etched in the processing apparatus 110 and carried into the chamber 1a of the drying apparatus 300 may be supplied with APM to perform APM cleaning, and after the APM cleaning, a pure water rinse process using DIW may be performed to wash away the APM remaining on the processing surface of the substrate W with pure water. Note that when the cleaning apparatus 120 and the drying apparatus 300 are shared and the drying apparatus 300 and other apparatuses are shared to configure one processing apparatus, for example, this apparatus may be regarded as the drying apparatus 300.

[0075] (5) The second volatile solvent supply unit 342 may be configured to supply the second volatile solvent H from the shielding plate 35. For example, as shown in FIG. 10, the nozzle 342a of the second volatile solvent supply unit 342 is provided so as to be able to supply the second volatile solvent H toward the vicinity of the center of the surface to be processed of the substrate W. That is, the nozzle 342a is inserted into the inside of the ventilation path 35d along the central axis and is provided so as to be able to move together with the shielding plate 35. PGMA containing HMDS, which is the second volatile solvent H, is supplied to the nozzle 342a from a reservoir (not shown) outside the drying chamber 31 via a pipe. The lower end of the nozzle 342a reaches the opening 35b and faces the center of the substrate W, so that the second volatile solvent H can be supplied toward the vicinity of the center of the surface to be processed of the substrate W.

[0076] As a result, in the above-mentioned process of supplying the first volatile solvent V (IPA) → supplying the second volatile solvent H (PGMA containing HMDS) → supplying the first volatile solvent V (IPA) → drying, when the first volatile solvent V is first supplied from the nozzle 341a to the processing surface of the substrate W, the shielding plate 35 can be positioned close to the substrate W, and further, when the second volatile solvent H is supplied from the nozzle 342a and when the first volatile solvent V is again supplied from the nozzle 341a, the shielding plate 35 can be positioned close to the substrate W. Therefore, in the process from the first supply of the first volatile solvent V to the supply of the second volatile solvent H, the supply of the first volatile solvent V again, and drying, as described above, the measurement unit 38 measures the film thickness of the processing liquid on the processing surface of the substrate W, and the adjustment unit 42 can adjust the gap based on the measured film thickness and information indicating the gap between the opposing surface 35a and the processing surface appropriate for the film thickness. This makes it possible to prevent the treatment liquid from adhering to the shielding plate 35 in all steps, and to prevent the occurrence of water marks due to the treatment liquid dropping.

[0077] [Other embodiments] Although the embodiment of the present invention and the modified examples of each part have been described above, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0078] 1. Substrate Processing Equipment 1a Chamber 1b Cassette 1c Transport robot 1d Buffer Unit 11 Cleaning Room 11a opening 11b Door 12 Support part 13 Rotation mechanism 14 cups 15 Supply section 15a Nozzle 15b Moving mechanism 20 Handling Equipment 21 Robot Hand 22 Moving mechanism 31 Drying room 31a aperture 31b Door 31c inlet 31d Exhaust port 31e Air supply section 31f Exhaust section 32 Support part 32a Rotating table 32b Retaining member 32c Rotation axis 33 Drive mechanism 34 Supply section 35 Shielding plate 35a Opposite side 35b opening 35c support 35d Ventilation passage 35e Connection port 35f hole 36 Moving mechanism 37 Air supply section 37a Air supply system 38 Measuring part 38a Detection section 39 Cups 41 Mechanical control unit 42 Adjustment part 43 Storage section 110 Processing equipment 120 Cleaning Equipment 200 Transport device 300 Drying equipment 341 First volatile solvent supply 341a Nozzle 341b Storage section 342 Second volatile solvent supply 342a Nozzle 342b Swing arm 342c Swing mechanism 400 Control device

Claims

1. a drying chamber into which the substrate is carried; a support unit that receives the substrate carried into the drying chamber; a drive mechanism that rotates the substrate supported by the support; a supply unit that supplies a processing liquid onto the processing surface of the rotating substrate; a shielding plate having an opposing surface facing the surface to be treated; a movement mechanism that moves the shielding plate in a direction toward and away from the substrate; an air supply unit that supplies an oxygen-free gas to a space between the facing surface and the substrate to remove oxygen from an atmosphere above the surface to be processed; a measuring unit for measuring a film thickness of the treatment liquid supplied onto the treatment surface; an adjusting unit that adjusts the distance based on the film thickness measured by the measuring unit and information indicating a distance between the opposing surface and the processed surface that is appropriate for the predetermined film thickness; A substrate drying apparatus having a

2. 2. The substrate drying apparatus according to claim 1, wherein the measuring unit is provided on the shielding plate.

3. 2. The substrate drying apparatus according to claim 1, wherein the measuring unit is capable of measuring the film thickness of the processing liquid at a plurality of locations on the processing surface.

4. 4. The substrate drying apparatus according to claim 3, wherein the adjustment unit adjusts the distance based on the maximum film thickness among the film thicknesses at the plurality of locations.

5. The substrate drying apparatus according to claim 1, wherein the adjustment unit adjusts the distance between the opposing surface and the processed surface of the substrate that is appropriate for the predetermined film thickness of the processing liquid by raising and lowering the shielding plate using the moving mechanism.

6. a processing apparatus for processing the substrate by supplying a substrate processing solution while rotating the substrate; a cleaning device that cleans the substrate processed by the processing device by supplying a cleaning liquid while rotating the substrate; The substrate drying apparatus according to any one of claims 1 to 5, a transfer device that transfers the substrate cleaned in the cleaning device with a liquid film formed thereon by the cleaning liquid supplied in the cleaning device out of the cleaning device and transfers the substrate into the substrate drying device; A substrate processing apparatus comprising:

7. a processing liquid supplying step in which a supply unit supplies a processing liquid onto a surface to be processed of a substrate rotating in a drying chamber; a film thickness measuring step in which a measuring unit measures a film thickness of the treatment liquid supplied onto the treatment surface; an approaching step in which a moving mechanism moves a shielding plate having an opposing surface facing the processing surface in a direction approaching the substrate; an air supply step in which an air supply unit supplies an oxygen-free gas to a space between the opposing surface and the substrate, thereby eliminating oxygen from an atmosphere above the surface to be processed; an adjusting step in which an adjusting unit adjusts the distance based on the film thickness measured by the measuring unit and information indicating a distance between the opposing surface and the processed surface that is appropriate for the predetermined film thickness; a drying step of discharging the processing liquid by centrifugal force caused by rotation of the substrate; A method for drying a substrate comprising:

8. The processing liquid supplying step includes: a first volatile solvent supplying step of supplying a first volatile solvent from a first volatile solvent supply unit in the supply unit while rotating the substrate supported by a support unit using a drive mechanism, on which a liquid film of a cleaning liquid is formed, thereby replacing the liquid film of the cleaning liquid with the first volatile solvent; a water-repellent film forming step of supplying a second volatile solvent, which contains a water-repellent agent for forming a water-repellent film and has a surface tension when vaporized lower than that of the first volatile solvent, from a second volatile solvent supply unit in the supply unit, thereby replacing a liquid film of the first volatile solvent with the second volatile solvent and forming the water-repellent film on the substrate; The method for drying a substrate according to claim 7, comprising:

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