Detection method of abnormality in workpiece thickness measurement

Abstract

To provide a technology for detecting an abnormality in film thickness measurement on a workpiece such as a wafer.SOLUTION: A method includes generating multiple spectra of reflected light from multiple measurement points on a workpiece over a predetermined period of time during polishing of the workpiece, classifying the plurality of spectra into a plurality of groups including at least a first group and a second group according to the feature amount of each of the spectra, determining a monitoring index value on the basis of the number of spectra included in at least the first group, and detecting an abnormality in the film thickness measurement of at least one workpiece on the basis of a comparison between the monitoring index value and a threshold value.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present invention relates to polishing a workpiece having a wiring structure on its surface, such as a wafer, a wiring board, or a square substrate, and more particularly to a technique for detecting anomalies in film thickness measurements of the workpiece based on multiple spectra of reflected light from the workpiece. [Background technology]

[0002] In the manufacturing process of semiconductor devices, various materials are repeatedly formed on a silicon wafer to form a layered structure. In order to form this layered structure, technology for flattening the surface of the top layer is important. Chemical mechanical polishing (CMP) is used as one method of such flattening.

[0003] Chemical mechanical polishing (CMP) is performed by a polishing apparatus. This type of polishing apparatus generally includes a polishing table that supports a polishing pad, a polishing head that holds a wafer having a film, and a polishing liquid supply nozzle that supplies a polishing liquid (e.g., slurry) onto the polishing pad. The polishing apparatus supplies the polishing liquid onto the polishing pad from the polishing liquid supply nozzle while rotating the polishing head and the polishing table. The polishing head presses the surface of the wafer against the polishing pad, thereby polishing the film that constitutes the surface of the wafer with the polishing liquid present between the wafer and the polishing pad.

[0004] In order to measure the thickness of a non-metallic film such as an insulating film or a silicon layer (hereinafter simply referred to as film thickness), a polishing apparatus is generally equipped with an optical film thickness measuring device. This optical film thickness measuring device is configured to guide light emitted by a light source to the surface of the wafer and determine the film thickness of the wafer by analyzing the spectrum of the light reflected from the wafer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2020-53550 A [Patent Document 2] JP 2003-312892 A Summary of the Invention [Problem to be solved by the invention]

[0006] As semiconductor device structures become finer, the performance required of optical film thickness measurement devices is becoming increasingly higher. Optical film thickness measurement devices have multiple parameters for adjusting their functions, and unless these parameters are adjusted or set correctly, the optical film thickness measurement device cannot measure the film thickness of the wafer correctly. In addition, if there is a problem with the optical film thickness measurement device itself, the optical film thickness measurement device cannot measure the film thickness of the wafer correctly.

[0007] The above parameters of the optical film thickness measurement device are pre-adjusted based on the surface structure of the wafer. However, different types of wafers to be measured have different surface structures, and as a result, the optical film thickness measurement device cannot measure the film thickness of the wafer correctly.

[0008] If there is an abnormality in the measurement of the film thickness of a wafer, the polishing apparatus cannot polish the wafer properly. Therefore, the present invention provides a technique for detecting an abnormality in the measurement of the film thickness of a workpiece such as a wafer. [Means for solving the problem]

[0009] In one aspect, a method for detecting an anomaly in a film thickness measurement of a workpiece is provided, the method including: generating a plurality of spectra of reflected light from a plurality of measurement points on at least one workpiece by an optical film thickness measurement device over a predetermined period during polishing of the at least one workpiece; classifying the plurality of spectra into a plurality of groups including at least a first group and a second group according to a feature amount of each spectrum; determining a monitoring index value based on at least a number of spectra included in the first group; and detecting an anomaly in a film thickness measurement of the at least one workpiece based on a comparison of the monitoring index value with a threshold value.

[0010] In one embodiment, the spectra included in the first group are either a spectrum of reflected light from a wiring pattern region formed on the surface of the at least one workpiece or a noise spectrum, and the spectra included in the second group are the other of the spectrum of reflected light from the wiring pattern region and the noise spectrum. In one embodiment, the method further includes generating a plurality of sample spectra of reflected light from a plurality of measurement points of a sample having the same surface structure as the at least one workpiece while polishing the sample, performing clustering on the plurality of sample spectra to classify the plurality of sample spectra into a plurality of sample groups, and creating a spectral classifier based on features of the plurality of sample spectra classified into the plurality of sample groups, wherein the spectral classifier is configured to classify a new spectrum into one of a plurality of sample groups including at least a first sample group and a second sample group according to the features, and further includes determining the threshold based on the number of sample spectra included in at least the first sample group. In one embodiment, the method includes classifying the plurality of spectra into a plurality of groups including at least the first group and the second group according to features of each spectrum by the spectrum classifier.

[0011] In one aspect, the monitoring index value is any one of the number of spectra included in the first group, a ratio of the number of spectra included in the first group to the number of spectra included in the second group, a ratio of the number of spectra included in the second group to the number of spectra included in the first group, or a ratio of the number of spectra included in the first group to the total number of the plurality of spectra generated over the predetermined period. In one embodiment, the predetermined period during polishing of the at least one workpiece is the entire period from the start of polishing a workpiece to the end of polishing, or a portion of the entire period. In one embodiment, the predetermined period during polishing of the at least one workpiece is the total period of polishing of a plurality of workpieces. In one embodiment, the threshold value varies during polishing of the at least one workpiece. Effect of the Invention

[0012] The spectrum varies depending on the surface structure of the workpiece. For example, the spectrum of the reflected light from the wiring pattern region on the surface of the workpiece and the spectrum of the reflected light from the scribe line on the surface of the workpiece have different shapes. The multiple spectra of the reflected light are classified into multiple groups based on the characteristic amount of each spectrum (e.g., the shape of the spectrum, or the intensity data of the reflected light shown in the spectrum).

[0013] During polishing of the workpiece, the surface structure of the workpiece itself does not change. Therefore, the number of the multiple spectra included in the first group classified by clustering is approximately constant during polishing of the workpiece. However, if a malfunction occurs in the optical film thickness measurement device, the generated spectrum changes, and as a result, the number of the multiple spectra included in the first group changes. Similarly, if the workpiece being polished has a surface structure different from the expected surface structure, the number of the multiple spectra included in the first group changes.

[0014] Therefore, the monitoring index value determined based on at least the number of the plurality of spectra included in the first group can be used as an index for determining an abnormality in the film thickness measurement. According to the present invention, an abnormality in the film thickness measurement can be accurately detected based on a comparison between the monitoring index value and a threshold value. [Brief description of the drawings]

[0015] [Figure 1]FIG. 1 is a schematic diagram illustrating an embodiment of a polishing apparatus. [Diagram 2] FIG. 2 is a cross-sectional view showing a detailed configuration of the optical film thickness measurement device. [Diagram 3] FIG. 2 shows a spectrum generated from light intensity measurement data. [Figure 4] 1 is a graph showing multiple spectra generated over a period of time during polishing of a workpiece. [Diagram 5] FIG. 2 is a schematic diagram showing an example of a portion of a surface structure of a workpiece. [Figure 6] FIG. 5 is a diagram in which the multiple spectra shown in FIG. 4 are classified into three groups. [Figure 7] 13 is a graph showing an example of the number of spectra in each of three groups when the optical film thickness measurement apparatus is in a normal state. [Figure 8] 13 is a graph showing an example of the number of spectra in each of three groups when a malfunction occurs in the optical film thickness measurement device. [Figure 9] 1 is a flow chart illustrating an embodiment of a method for determining a threshold value against which a monitoring index value is compared. [Figure 10] 1 is a flow chart illustrating one embodiment in which a processing system detects anomalies in film thickness measurements. [Figure 11] 11 is a flow chart illustrating another embodiment in which a processing system detects an anomaly in a film thickness measurement. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing one embodiment of a polishing apparatus. As shown in FIG. 1, the polishing apparatus includes a polishing table 3 supporting a polishing pad 2, a polishing head 1 pressing a workpiece W against the polishing pad 2, a table motor 6 rotating the polishing table 3, a polishing liquid supply nozzle 5 for supplying a polishing liquid such as a slurry onto the polishing pad 2, and an operation control unit 9 for controlling the operation of the polishing apparatus. The upper surface of the polishing pad 2 constitutes a polishing surface 2a for polishing the workpiece W. The workpiece W has a film forming a wiring structure on its surface. Examples of the workpiece W include a wafer, a wiring board, a square board, and the like used in the manufacture of semiconductor devices.

[0017] The polishing head 1 is connected to a head shaft 10, which is connected to a polishing head motor (not shown). The polishing head motor is configured to rotate the polishing head 1 together with the head shaft 10 in the direction indicated by the arrow. The polishing table 3 is connected to a table motor 6, which is configured to rotate the polishing table 3 and the polishing pad 2 in the direction indicated by the arrow. The polishing head 1, the polishing head motor, and the table motor 6 are connected to an operation control unit 9.

[0018] The workpiece W is polished as follows. While the polishing table 3 and polishing head 1 are rotated in the direction shown by the arrow in Fig. 1, a polishing liquid is supplied from a polishing liquid supply nozzle 5 to the polishing surface 2a of the polishing pad 2 on the polishing table 3. While the workpiece W is rotated by the polishing head 1, the workpiece W is pressed against the polishing surface 2a of the polishing pad 2 by the polishing head 1 with the polishing liquid present on the polishing pad 2. The surface of the workpiece W is polished by the chemical action of the polishing liquid and the mechanical action of the abrasive grains contained in the polishing liquid and the polishing pad 2.

[0019] The operation control unit 9 includes a storage device 9a in which a program is stored, and a calculation device 9b that executes calculations according to instructions included in the program. The operation control unit 9 includes at least one computer. The storage device 9a includes a main storage device such as a random access memory (RAM), and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the calculation device 9b include a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). However, the specific configuration of the operation control unit 9 is not limited to these examples.

[0020] The polishing apparatus is equipped with an optical film thickness measuring device 20 that measures the thickness of a film on the workpiece W. The optical film thickness measuring device 20 includes a light source 22 that emits light, an optical sensor head 25 that irradiates the workpiece W with the light from the light source 22 and receives the light reflected from the workpiece W, a spectrometer 27 connected to the optical sensor head 25, and a processing system 30 that determines the thickness of the film on the workpiece W based on the spectrum of the light reflected from the workpiece W. The optical sensor head 25 is disposed within the polishing table 3 and rotates together with the polishing table 3.

[0021] The processing system 30 includes a storage device 30a in which a program is stored, and an arithmetic device 30b that executes calculations according to instructions included in the program. The processing system 30 is composed of at least one computer. The storage device 30a includes a main storage device such as a random access memory (RAM), and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the arithmetic device 30b include a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). However, the specific configuration of the processing system 30 is not limited to these examples.

[0022] Each of the operation control unit 9 and the processing system 30 may be composed of a plurality of computers. For example, each of the operation control unit 9 and the processing system 30 may be composed of a combination of an edge server and a cloud server. In one embodiment, the operation control unit 9 and the processing system 30 may be composed of a single computer.

[0023] 2 is a cross-sectional view showing a detailed configuration of the optical film thickness measurement device 20. The optical film thickness measurement device 20 includes a light-projecting optical fiber cable 31 connected to the light source 22, and a light-receiving optical fiber cable 32 connected to the spectrometer 27. A tip 31a of the light-projecting optical fiber cable 31 and a tip 32a of the light-receiving optical fiber cable 32 form the optical sensor head 25. That is, the light-projecting optical fiber cable 31 guides the light emitted by the light source 22 to the workpiece W on the polishing pad 2, and the light-receiving optical fiber cable 32 receives the reflected light from the workpiece W and transmits it to the spectrometer 27.

[0024] The spectroscope 27 is connected to the processing system 30. The light projecting fiber optic cable 31, the light receiving fiber optic cable 32, the light source 22, and the spectroscope 27 are attached to the polishing table 3 and rotate together with the polishing table 3 and the polishing pad 2. The optical sensor head 25, which is composed of the tip 31a of the light projecting fiber optic cable 31 and the tip 32a of the light receiving fiber optic cable 32, is disposed facing the surface of the workpiece W on the polishing pad 2. The position of the optical sensor head 25 is a position where it crosses the surface of the workpiece W on the polishing pad 2 every time the polishing table 3 and the polishing pad 2 rotate once. The polishing pad 2 has a through hole 2b located above the optical sensor head 25. The optical sensor head 25 irradiates light onto the workpiece W through the through hole 2b every time the polishing table 3 rotates once, and receives reflected light from the workpiece W through the through hole 2b.

[0025] The light source 22 is a flash light source that repeatedly emits light at short time intervals. An example of the light source 22 is a xenon flash lamp. The light source 22 is electrically connected to the operation control unit 9, and emits light upon receiving a trigger signal sent from the operation control unit 9. More specifically, while the optical sensor head 25 traverses the surface of the workpiece W on the polishing pad 2, the light source 22 receives multiple trigger signals and emits light multiple times. Therefore, each time the polishing table 3 rotates once, light is irradiated onto multiple measurement points on the workpiece W.

[0026] The light emitted by the light source 22 is transmitted to the optical sensor head 25. That is, the light is transmitted to the optical sensor head 25 through the light-projecting fiber optic cable 31 and emitted from the optical sensor head 25. The light passes through the through hole 2b of the polishing pad 2 and is incident on the workpiece W on the polishing pad 2. The light reflected from the workpiece W passes through the through hole 2b of the polishing pad 2 again and is received by the optical sensor head 25. The reflected light from the workpiece W is transmitted to the spectrometer 27 through the light-receiving fiber optic cable 32.

[0027] The spectrometer 27 is configured to resolve the reflected light according to wavelength and measure the intensity of the reflected light at each wavelength over a predetermined wavelength range. That is, the spectrometer 27 resolves the reflected light from the workpiece W according to wavelength and measures the intensity of the reflected light at each wavelength over a predetermined wavelength range to generate light intensity measurement data. The intensity of the reflected light at each wavelength may also be expressed as a relative value, such as a reflectance or a relative reflectance. The light intensity measurement data is sent to the processing system 30.

[0028] 3 from the light intensity measurement data. The spectrum of the reflected light from the workpiece W contains information of the film thickness of the workpiece W. In other words, the spectrum of the reflected light varies depending on the film thickness of the workpiece W. The processing system 30 is configured to determine the film thickness of the workpiece W based on the spectrum of the reflected light.

[0029] A known technique can be used to determine the film thickness of the workpiece W based on the spectrum. For example, the processing system 30 determines a reference spectrum from a reference spectrum library that is closest in shape to the spectrum, and determines the film thickness associated with the determined reference spectrum. In another example, the processing system 30 performs a Fourier transform on the spectrum and determines the film thickness from the resulting frequency spectrum.

[0030] The processing system 30 has a function of detecting anomalies in the film thickness measurement of the workpiece W. Anomalies in the film thickness measurement can occur due to various causes. For example, if the parameters that determine the operation of the optical film thickness measurement device 20 are not adjusted or set correctly, if there is a problem with the optical system of the optical film thickness measurement device 20, or if the film thickness of a workpiece W having a different type of surface structure from the expected type is to be measured, the optical film thickness measurement device 20 cannot measure the film thickness correctly.

[0031] Therefore, while measuring the film thickness based on the spectrum of the reflected light from the workpiece W as described above, the processing system 30 detects an abnormality in the film thickness measurement of the workpiece W as follows.

[0032] The processing system 30 generates multiple spectra of reflected light from multiple measurement points on the workpiece W over a predetermined period of time during polishing of the workpiece W. Examples of the predetermined period of time during polishing of the workpiece W include a period during which the polishing table 3 makes N rotations (N is a natural number), the entire period from the start to the end of polishing of the workpiece W, and a portion of the entire period from the start to the end of polishing of the workpiece W. The processing system 30 determines the film thickness of the workpiece W based on the spectra of reflected light generated at each time point during polishing of the workpiece W.

[0033] In one embodiment, multiple workpieces may be polished and multiple spectra of reflected light generated over the course of polishing the workpieces may be used.

[0034] The processing system 30 classifies the multiple spectra generated within the predetermined period into multiple groups according to the feature amount of each spectrum. Examples of the feature amount of each spectrum include the shape of the spectrum and the intensity data of the reflected light shown in the spectrum. In this embodiment, the processing system 30 includes a spectrum classifier, which will be described later, and is configured to classify the multiple spectra into multiple groups by the spectrum classifier.

[0035] FIG. 4 is a graph showing a number of spectra generated during a predetermined period during polishing of the workpiece W. In FIG. 4, the vertical axis represents the intensity of reflected light from the workpiece W, and the horizontal axis represents the wavelength of the reflected light. The intensity of the reflected light may be expressed as a relative value such as reflectance or relative reflectance. In general, the spectrum changes with changes in the film thickness of the workpiece W. Meanwhile, the spectrum also changes with the surface structure of the workpiece W. That is, during polishing of the workpiece W, light is irradiated to a number of measurement points on the surface of the workpiece W, and a spectrum of reflected light from these measurement points is generated. The measurement points are distributed across the entire workpiece W.

[0036] 5 is a schematic diagram showing an example of a portion of the surface of the workpiece W. The surface of the workpiece W has a plurality of wiring pattern regions 100 (also called cells) in which wiring patterns are formed, and scribe lines 101 present between the wiring pattern regions 100. The spectrum of reflected light from a measurement point MP1 in the wiring pattern region 100 has a different shape from the spectrum of reflected light from a measurement point MP2 in the scribe line 101. Thus, the multiple spectra generated within a given period during polishing of the workpiece W vary depending on the positions of those measurement points.

[0037] Furthermore, the multiple spectra generated during a predetermined period of time during polishing of the workpiece W also include a noise spectrum. The noise spectrum is noise caused by various factors, and each noise spectrum does not accurately reflect the film thickness. This noise spectrum has a shape different from both the spectrum of the reflected light from the wiring pattern region 100 and the spectrum of the reflected light from the scribe line 101.

[0038] 4 includes a spectrum of reflected light from the wiring pattern region 100, a spectrum of reflected light from the scribe line 101, and a noise spectrum. The processing system 30 classifies the multiple spectra generated within a predetermined period during polishing of the workpiece W into groups G1, G2, and G3 according to their feature amounts. In this embodiment, group G1 is a group of spectra of reflected light from the wiring pattern region 100, group G2 is a group of spectra of reflected light from the scribe line 101, and group G3 is a group of noise spectra.

[0039] Fig. 6 is a diagram showing the multiple spectra shown in Fig. 4 classified into groups G1, G2, and G3. The processing system 30 classifies the multiple spectra into groups G1, G2, and G3 as shown in Fig. 6 based on the feature amount of each spectrum (e.g., the shape of the spectrum or the intensity data of reflected light shown in the spectrum). However, depending on the surface structure of the workpiece W, the multiple spectra may be classified into two groups or four or more groups.

[0040] The processing system 30 further counts the number of spectra included in each of the groups G1, G2, and G3. FIG. 7 is a graph showing an example of the number of spectra included in each of the groups G1, G2, and G3. In FIG. 7, the vertical axis represents the number of spectra, and the horizontal axis represents the polishing time. During polishing of the workpiece W, the film thickness of the workpiece W changes, but the surface structure of the workpiece W itself does not change. Therefore, the ratio of the number of spectra included in the groups G1, G2, and G3 is determined depending on the surface structure of the workpiece W.

[0041] However, if a malfunction occurs in the optical film thickness measurement device 20 (e.g., a malfunction in the optical fiber cable), the generated spectrum changes, and as a result, the number of spectra included in group G1 changes. Similarly, if the workpiece W being polished has a surface structure different from the expected surface structure, the number of spectra included in group G1 changes.

[0042] FIG. 8 is a graph showing an example of the number of spectra in each of groups G1, G2, and G3 when a malfunction occurs in the optical film thickness measurement device 20. As shown in FIG. 8, due to a malfunction of the optical film thickness measurement device 20, the number of spectra in group G1 decreases, while the number of noise spectra in group G3 increases. In this way, when a malfunction occurs in the optical film thickness measurement device 20, the number of spectra in group G1 and the number of spectra in group G3 change compared to when the optical film thickness measurement device 20 is normal. As a result, the optical film thickness measurement device 20 cannot correctly measure the film thickness of the workpiece W. A similar phenomenon occurs when the parameters that determine the operation of the optical film thickness measurement device 20 are not adjusted or set correctly, or when measuring the film thickness of a workpiece W having a different type of surface structure from that expected.

[0043] Therefore, the processing system 30 determines a monitoring index value based on at least the number of spectra included in the group G1, and detects an abnormality in the film thickness measurement of the workpiece W based on a comparison between the monitoring index value and a threshold value. The threshold value is a predetermined numerical value, as described below. In the example of FIG. 8, the number of spectra included in the group G1 is increased compared to the normal state. Therefore, the monitoring index value determined based on the number of spectra included in the group G1 can be used as an index for determining an abnormality in the film thickness measurement.

[0044] The monitoring index value is a numerical value reflecting a change in the number of spectra included in group G1. Specific examples of the monitoring index value include the number of spectra included in group G1, the ratio of the number of spectra included in group G1 to the number of spectra included in group G3, the ratio of the number of spectra included in group G3 to the number of spectra included in group G1, and the ratio of the number of spectra included in group G1 to the total number of spectra generated over the predetermined period.

[0045] In one embodiment, as described below, the monitoring index value may be determined based on at least the number of spectra included in group G3. In this case, specific examples of the monitoring index value include the number of spectra included in group G3, the ratio of the number of spectra included in group G3 to the number of spectra included in group G1, the ratio of the number of spectra included in group G1 to the number of spectra included in group G3, and the ratio of the number of spectra included in group G3 to the total number of spectra generated over the predetermined period.

[0046] The processing system 30 is configured to detect a film thickness measurement anomaly based on a comparison between the monitoring index value and a threshold value. More specifically, the processing system 30 determines that a film thickness measurement anomaly occurs when the monitoring index value falls below the threshold value or when the monitoring index value exceeds the threshold value.

[0047] One embodiment of a method for determining a threshold value against which a monitoring index value is compared will now be described with reference to the flow chart of FIG. In step 101, a sample having the same surface structure as the workpiece W is polished. Although a single sample may be polished, multiple samples may be polished in order to increase the accuracy of detecting anomalies in film thickness measurement.

[0048] In step 102, the processing system 30 performs clustering on the multiple sample spectra generated during sample polishing to classify the multiple sample spectra into sample group S1, sample group S2, and sample group S3. Clustering is an unsupervised machine learning method that classifies multiple sample spectra according to their features, and is also called cluster analysis or data classification.

[0049] In step 103, the processing system 30 creates a spectrum classifier based on the feature quantities of the plurality of sample spectra classified into sample group S1, sample group S2, and sample group S3. The spectrum classifier is configured to classify (assign) a new spectrum into any of sample group S1, sample group S2, and sample group S3 according to the feature quantities. The spectrum classifier is stored in the storage device 30a of the processing system 30.

[0050] The spectrum classifier is a device virtually constructed within the processing system 30, and its specific configuration (algorithm) is not particularly limited as long as it can execute the above-mentioned functions. In one example, the processing system 30 creates a spectrum classifier that determines a first range including the feature amounts (e.g., shapes) of multiple sample spectra belonging to sample group S1, determines a second range including the feature amounts (e.g., shapes) of multiple sample spectra belonging to sample group S2, determines a third range including the feature amounts (e.g., shapes) of multiple sample spectra belonging to sample group S3, and determines whether the feature amount of a new spectrum is included in the first range, the second range, or the third range.

[0051] In one embodiment, the spectrum classifier may be a trained model constructed by machine learning. For example, the processing system 30 may perform machine learning using the sample spectra classified into the sample group S1, the sample group S2, and the sample group S3 as training data to create a spectrum classifier that is a trained model.

[0052] In step 104, the processing system 30 classifies the plurality of sample spectra obtained during polishing of the sample in step 101 into sample group S1', sample group S2', and sample group S3' by the spectrum classifier. Specifically, each of the plurality of sample spectra is assigned to one of sample group S1', sample group S2', and sample group S3' by the spectrum classifier. Sample group S1' includes a spectrum of reflected light from a wiring pattern region of the sample, sample group S2' includes a spectrum of reflected light from a scribe line, and sample group S3' includes a noise spectrum. Based on the classification result using the spectrum classifier, the processing system 30 may create a graph showing the relationship between the number of spectrums and polishing time, as described with reference to FIG. 7.

[0053] In step 105, a method for calculating (determining) the monitoring index value is determined based on the classification result using the spectrum classifier. In one embodiment, the monitoring index value is determined based on at least the number of sample spectra included in the sample group S1'. Specific examples of the method for calculating (determining) the monitoring index value include the number of sample spectra included in the sample group S1', the ratio of the number of sample spectra included in the sample group S1' to the number of sample spectra included in the sample group S3', the ratio of the number of sample spectra included in the sample group S3' to the number of sample spectra included in the sample group S1', and the ratio of the number of sample spectra included in the sample group S1' to the total number of the sample spectra generated over the predetermined period.

[0054] In another embodiment, the monitoring index value may be determined (calculated) based on at least the number of sample spectra included in the sample group S3'. As shown in Figs. 7 and 8, when a malfunction or the like occurs in the optical film thickness measurement device 20, the number of noise spectra in the group G3 changes compared to normal times. Therefore, the processing system 30 may detect an abnormality in the film thickness measurement of the workpiece W based on a comparison between the monitoring index value determined based on the number of noise spectra and a threshold value. In this case, examples of how to calculate (determine) the monitoring index value include the number of sample spectra included in the sample group S3', the ratio of the number of sample spectra included in the sample group S3' to the number of sample spectra included in the sample group S1', the ratio of the number of sample spectra included in the sample group S1' to the number of sample spectra included in the sample group S3', and the ratio of the number of sample spectra included in the sample group S3' to the total number of the multiple sample spectra generated over the above-mentioned predetermined period.

[0055] In step 106, the processing system 30 calculates (determines) a monitoring index value according to the calculation (determination) method determined in step 105 using at least one of the sample groups S1', S2', and S3', and determines a threshold value based on the obtained monitoring index value. The threshold value may be the same as the calculated (determined) monitoring index value, or may be a value larger or smaller than the monitoring index value by a predetermined tolerance. The threshold value determined in this manner is stored in the storage device 30a of the processing system 30. The processing system 30 calculates the monitoring index value during or after polishing the workpiece W, and determines that an abnormality in the film thickness measurement has occurred when the monitoring index value falls below the threshold value or exceeds the threshold value.

[0056] FIG. 10 is a flow chart illustrating one embodiment in which the processing system 30 detects anomalies in film thickness measurements. In step 201, polishing of the workpiece W is started by the polishing apparatus shown in FIGS. In step 202, the processing system 30 classifies a plurality of spectra generated within a predetermined period during polishing of the workpiece W into groups G1, G2, and G3 using a spectrum classifier. In this embodiment, the spectrum classifier of the processing system 30 classifies the plurality of spectra into groups G1, G2, and G3 according to the feature amount of each spectrum. In the embodiment shown in Fig. 10, the predetermined period is the time for the polishing table to make one rotation.

[0057] In step 203, the processing system 30 calculates (determines) a monitoring index value based on at least the number of spectra included in group G1 (or G3). The monitoring index value is calculated (determined) according to the calculation (determination) method determined in step 105 above. In step 204, the processing system 30 determines whether the monitoring index value has fallen below (or exceeded) a threshold value. In step 205, the processing system 30 generates an alarm signal to indicate an anomaly in the film thickness measurement if the monitored index value falls below (or exceeds) a threshold value.

[0058] If the monitoring index value is not below (or above) the threshold value, in step 206, the processing system 30 determines whether or not the polishing end point of the workpiece W has been reached. The polishing end point of the workpiece W is, for example, the point at which the film thickness of the workpiece W reaches the target film thickness. If the polishing end point of the workpiece W has been reached, the processing system 30 sends a polishing end point signal to the operation control unit 9, and the operation control unit 9 ends polishing of the workpiece W by the polishing apparatus. If the polishing end point of the workpiece W has not been reached, the processing system 30 executes the above step 202 again.

[0059] FIG. 11 is a flow chart illustrating another embodiment in which the processing system 30 detects an anomaly in the film thickness measurement. In step 301, a workpiece W is polished by the polishing apparatus shown in FIGS. In step 302, after polishing the workpiece W, the processing system 30 classifies a plurality of spectra generated within a predetermined period during polishing of the workpiece W into groups G1, G2, and G3 using a spectrum classifier. In this embodiment, the spectrum classifier of the processing system 30 classifies the plurality of spectra into groups G1, G2, and G3 according to the feature amount of each spectrum. In the embodiment shown in FIG. 11, the predetermined period is the entire period from the start of polishing the workpiece W to the end point of polishing.

[0060] In step 303, the processing system 30 calculates (determines) a monitoring index value based on at least the number of spectra included in group G1 (or G3). The monitoring index value is calculated (determined) according to the calculation (determination) method determined in step 105 above. In step 304, the processing system 30 determines whether the monitoring index value has fallen below (or exceeded) a threshold value. In step 305, the processing system 30 generates an alarm signal to indicate an abnormality in the film thickness measurement if the monitoring index value is below (or above) the threshold value, and if the monitoring index value is not below (or above) the threshold value, the processing system 30 ends the operation of detecting the abnormality in the film thickness measurement.

[0061] In the above-described embodiment, the multiple spectra are classified into three groups: group G1, group G2, and group G3, but depending on the surface structure of the workpiece W, the multiple spectra may be classified into two groups, or four or more groups.

[0062] In the embodiment described with reference to FIG. 10, the monitoring index value is compared to the threshold value while the workpiece W is being polished. The threshold value is constant while the workpiece W is being polished. As the workpiece W is polished, the film thickness of the workpiece W decreases. The decrease in film thickness may affect the number of spectra included in group G1 and / or the number of noise spectra included in group G3. Therefore, in one embodiment, to eliminate such effects, the processing system 30 may change the threshold value while the workpiece W is being polished. For example, the processing system 30 may change the threshold value according to a change in the polishing time or film thickness of the workpiece W.

[0063] The above-described embodiments have been described for the purpose of enabling a person having ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments are naturally possible for a person skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope according to the technical idea defined by the claims. [Explanation of symbols]

[0064] 1 Polishing head 2 Polishing Pads 2a Polished surface 3 Polishing table 5 Polishing fluid supply nozzle 6 Table Motor 9. Operation control section 10 Head shaft 20 Optical film thickness measuring device 22 Light source 25 Optical sensor head 27 Spectrometer 30 Processing System 31 Light-emitting fiber optic cable 32 Receiver optical fiber cable W Workpiece

Claims

1. 1. A method for detecting anomalies in film thickness measurements on a workpiece, comprising: generating a plurality of spectra of reflected light from a plurality of measurement points on at least one workpiece over a predetermined period of time while the at least one workpiece is being polished using an optical film thickness measurement device; classifying the plurality of spectra into a plurality of groups including at least a first group and a second group according to a feature amount of each spectrum; determining a monitoring index value based on at least a number of spectra included in the first group; detecting an anomaly in the film thickness measurement of the at least one workpiece based on a comparison of the monitoring index value to a threshold value.

2. 2. The method according to claim 1, wherein the spectra included in the first group are either a spectrum of reflected light from a wiring pattern region formed on the surface of the at least one workpiece or a noise spectrum, and the spectra included in the second group are the other of the spectrum of reflected light from the wiring pattern region and the noise spectrum.

3. generating a plurality of sample spectra of reflected light from a plurality of measurement points on a sample having the same surface structure as the at least one workpiece while polishing the sample; performing clustering on the plurality of sample spectra to classify the plurality of sample spectra into a plurality of sample groups; The method further includes creating a spectrum classifier based on feature quantities of the plurality of sample spectra classified into the plurality of sample groups, the spectrum classifier is configured to classify a new spectrum into one of a plurality of sample groups including at least a first sample group and a second sample group according to the feature of the new spectrum; The method of claim 1 , further comprising determining the threshold based on at least a number of sample spectra included in the first sample group.

4. 4. The method according to claim 3, wherein the step of classifying the plurality of spectra into a plurality of groups including at least the first group and the second group according to the feature amount of each spectrum is a step of classifying the plurality of spectra into a plurality of groups including at least the first group and the second group by the spectrum classifier.

5. 2. The method of claim 1, wherein the monitoring index value is any one of the number of spectra included in the first group, a ratio of the number of spectra included in the first group to the number of spectra included in the second group, a ratio of the number of spectra included in the second group to the number of spectra included in the first group, and a ratio of the number of spectra included in the first group to a total number of the plurality of spectra generated over the predetermined period.

6. 2. The method of claim 1, wherein the predetermined period during polishing of the at least one workpiece is the entire period from the start of polishing a workpiece to the end of polishing, or a portion of the entire period.

7. The method of claim 1 , wherein the predetermined period during polishing of the at least one workpiece is a total period of polishing of a plurality of workpieces.

8. The method of claim 1 , wherein the threshold value varies during polishing of the at least one workpiece.

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