Polishing composition for silicon substrate

Abstract

To provide a polishing composition for a silicon substrate and a concentrate thereof that have excellent storage stability.SOLUTION: A polishing composition for a silicon substrate and a concentrate thereof according to the present disclosure includes the following component A, the following component B, the following component C, and the following component D. The component A is silica particles. The component B is a nitrogen-containing basic compound. The component C is cationic surfactant. The component D is nonionic surfactant.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present disclosure relates to a polishing composition for silicon substrates and a concentrate thereof, as well as a polishing method and a method for producing a semiconductor substrate using the same. [Background technology]

[0002] In recent years, the design rules for semiconductor devices have become finer due to the increasing demand for higher storage capacity of semiconductor memories. As a result, the depth of focus in photolithography used in the manufacturing process of semiconductor devices has become shallower, and the demand for reducing the surface roughness (haze) of silicon substrates (bare wafers) has become increasingly strict.

[0003] In order to improve the quality of silicon substrates, the silicon substrates are polished in multiple stages. In particular, the final polishing stage is performed to reduce haze.

[0004] For example, Patent Document 1 proposes a chemical mechanical polishing composition containing an abrasive such as silica, a basic component such as ammonia, a compound such as a quaternary ammonium salt having 6 or more carbon atoms, and an aqueous carrier. Patent Document 2 describes a method for producing a water-soluble polymer comprising: a silica particle; a quaternary ammonium compound; and a water-soluble polymer, the quaternary ammonium compound having a quaternary ammonium group with a carbon number of 10 or more and 22 or less; + A polishing liquid composition for silicon wafers has been proposed, in which the ratio b / a of the total number of moles b to the total number of moles a of silanol groups in silica particles is 0.005 or more and 2.00 or less. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2020-203980 A [Patent Document 2] JP 2018-107263 A Summary of the Invention [Problem to be solved by the invention]

[0006] Usually, polishing liquid compositions are stored and transported in the form of concentrates. However, as in Patent Documents 1 and 2, when a quaternary ammonium compound (cationic compound) is contained in a polishing liquid composition, there is a problem that silica particles tend to aggregate in a polishing liquid composition having a high silica concentration or in a concentrate thereof. Therefore, a polishing liquid composition having a high silica concentration or a concentrate having a high silica concentration is required to have storage stability.

[0007] Therefore, the present disclosure provides a polishing composition for silicon substrates and a concentrate thereof, which have excellent storage stability, as well as a polishing method and a method for manufacturing a semiconductor substrate using the same. [Means for solving the problem]

[0008] In one aspect, the present disclosure relates to a polishing liquid composition for silicon substrates, comprising the following component A, the following component B, the following component C, and the following component D: Component A: Silica particles Component B: Nitrogen-containing basic compound Component C: Cationic surfactant Component D: Nonionic surfactant

[0009] In one aspect, the present disclosure relates to a concentrate of the polishing fluid composition of the present disclosure.

[0010] In one aspect, the present disclosure relates to a method for producing a polishing fluid composition comprising diluting a concentrate of the polishing fluid composition of the present disclosure.

[0011] In one aspect, the present disclosure relates to a method for producing a concentrate of a polishing liquid composition, the method comprising the step of blending at least silica particles (component A), a nitrogen-containing basic compound (component B), a cationic surfactant (component C), and a nonionic surfactant (component D).

[0012] In one aspect, the present disclosure relates to an additive composition for polishing silicon substrates, comprising the following component C and component D: Component C: Cationic surfactant Component D: Nonionic surfactant

[0013] In one aspect, the present disclosure relates to a method for polishing a silicon substrate, comprising a step of polishing a silicon substrate to be polished with the polishing liquid composition of the present disclosure.

[0014] In one aspect, the present disclosure relates to a method for producing a semiconductor substrate, the method including: polishing a silicon substrate to be polished with the polishing liquid composition of the present disclosure; and cleaning the polished silicon substrate. Effect of the Invention

[0015] According to the present disclosure, it is possible to provide a polishing composition and a concentrate thereof having excellent storage stability, as well as a polishing method and a method for manufacturing a semiconductor substrate using the same. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] The present disclosure is based on the discovery that the storage stability of a polishing liquid composition and a concentrate thereof can be improved by adding a cationic surfactant and a nonionic surfactant to a polishing liquid composition containing silica particles and a nitrogen-containing basic compound.

[0017] That is, in one aspect, the present disclosure relates to a polishing liquid composition for silicon substrates (hereinafter also referred to as "the polishing liquid composition of the present disclosure") containing the following component A, the following component B, the following component C, and the following component D: Component A: Silica particles Component B: Nitrogen-containing basic compound Component C: Cationic surfactant Component D: Nonionic surfactant

[0018] According to one or more embodiments of the present disclosure, a polishing composition and a concentrate thereof having excellent storage stability can be provided.

[0019] Although the details of the mechanism by which the effects of the present disclosure are exerted are not clear, it is presumed as follows. Under alkaline conditions, silica particles (component A) are negatively charged, and the positively charged cationic surfactant (component B) adsorbs to the silica particles with its alkyl chain facing outward (towards the liquid). The silica particles then adsorb to each other and aggregate due to the hydrophobic interactions of the alkyl chains. It is presumed that nonionic surfactants (component D) that have hydrophilic groups such as ethylene oxide groups form weak hydrophobic interactions, and thus weaken the hydrophobic interactions between the cationic surfactants (component B), suppressing the aggregation of silica particles and improving storage stability. However, the present disclosure need not be construed as being limited to these mechanisms.

[0020] [Silica particles (component A)] The polishing liquid composition of the present disclosure contains silica particles (hereinafter also referred to as "Component A") as an abrasive. Component A includes colloidal silica, fumed silica, pulverized silica, and silica obtained by surface modification of these. From the viewpoint of reducing surface roughness (haze), colloidal silica is preferred. Component A may be one type or a combination of two or more types.

[0021] From the viewpoint of operability, the use form of component A is preferably a slurry form.When component A contained in the polishing liquid composition of the present disclosure is colloidal silica, from the viewpoint of preventing contamination of silicon substrate by alkali metal, alkaline earth metal, etc., the colloidal silica is preferably obtained from the hydrolysis product of alkoxysilane.The silica particles obtained from the hydrolysis product of alkoxysilane can be produced by a conventionally known method.

[0022] From the viewpoint of reducing surface roughness (haze), the average primary particle diameter of component A is preferably 10 nm or more, more preferably 15 nm or more, even more preferably 20 nm or more, even more preferably 25 nm or more, and is preferably 150 nm or less, more preferably 40 nm or less, and even more preferably 35 nm or less. From the same viewpoint, the average primary particle diameter of component A is preferably 10 nm or more and 150 nm or less, more preferably 10 nm or more and 40 nm or less, even more preferably 15 nm or more and 35 nm or less, even more preferably 20 nm or more and 35 nm or less, and even more preferably 25 nm or more and 35 nm or less.

[0023] In the present disclosure, the average primary particle size of component A is defined as the specific surface area S (m 2 The specific surface area can be measured, for example, by the method described in the Examples.

[0024] From the viewpoint of reducing surface roughness (haze), the average secondary particle diameter of component A is preferably 20 nm or more, more preferably 30 nm or more, even more preferably 40 nm or more, and is preferably 80 nm or less, more preferably 75 nm or less, and even more preferably 70 nm or less. From the same viewpoint, the average secondary particle diameter of component A is preferably 20 nm or more and 80 nm or less, more preferably 30 nm or more and 75 nm or less, and even more preferably 40 nm or more and 70 nm or less. In the present disclosure, the average secondary particle diameter is a value measured by a dynamic light scattering (DLS) method, and can be measured, for example, using the device described in the examples.

[0025] From the viewpoint of reducing surface roughness (haze), the degree of association of component A is preferably 3 or less, more preferably 2.5 or less, even more preferably 2.3 or less, and is preferably 1.1 or more, more preferably 1.5 or more, even more preferably 1.8 or more.

[0026] In the present disclosure, the degree of association of component A is a coefficient representing the shape of the silica particles and is calculated by the following formula. Degree of association = average secondary particle diameter / average primary particle diameter

[0027] The degree of association of Component A can be adjusted by using the methods described in, for example, JP-A-6-254383, JP-A-11-214338, JP-A-11-60232, JP-A-2005-060217, JP-A-2005-060219, and the like.

[0028] The shape of component A is preferably a so-called sphere type and / or a so-called cocoon type.

[0029] The content of component A in the polishing composition of the present disclosure is preferably 0.001 mass% or more, more preferably 0.05 mass% or more, and even more preferably 0.09 mass% or more, calculated as SiO2, from the viewpoint of improving the polishing rate and reducing the surface roughness (haze), and from the same viewpoint, it is preferably 0.2 mass% or less, more preferably 0.15 mass% or less, and even more preferably 0.11 mass% or less. More specifically, the content of component A in the polishing composition of the present disclosure is preferably 0.001 mass% or more and 0.2 mass% or less, more preferably 0.05 mass% or more and 0.15 mass% or less, and even more preferably 0.09 mass% or more and 0.11 mass% or less, calculated as SiO2. When component A is a combination of two or more kinds, the content of component A refers to the total content thereof.

[0030] [Nitrogen-containing basic compound (component B)] The polishing liquid composition of the present disclosure contains a nitrogen-containing basic compound (hereinafter also referred to as "component B"). From the viewpoint of improving the polishing rate, component B is preferably a water-soluble nitrogen-containing basic compound. In the present disclosure, "water-soluble" refers to having a solubility in water (20°C) of 0.5 g / 100 mL or more, preferably 2 g / 100 mL or more. In the present disclosure, "water-soluble nitrogen-containing basic" refers to a nitrogen-containing compound that exhibits basicity when dissolved in water. Component B may be one type or a combination of two or more types.

[0031] In one or more embodiments, component B may be at least one selected from an amine compound and an ammonium compound. For example, component B may be one or a combination of two or more selected from ammonia, ammonium hydroxide, ammonium carbonate, ammonium hydrogen carbonate, dimethylamine, trimethylamine, diethylamine, triethylamine, monoethanolamine, diethanolamine, triethanolamine, N-methylethanolamine, N-methyl-N,N-diethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-(β-aminoethyl)ethanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine, ethylenediamine, hexamethylenediamine, piperazine hexahydrate, anhydrous piperazine, 1-(2-aminoethyl)piperazine, N-methylpiperazine, diethylenetriamine, tetramethylammonium hydroxide, and hydroxylamine. Among these, from the viewpoints of increasing the polishing rate and reducing the surface roughness (haze), Component B is preferably ammonia or a mixture of ammonia and hydroxyamine, and more preferably ammonia.

[0032] The content of component B in the polishing liquid composition of the present disclosure is preferably 0.0005% by mass or more, more preferably 0.001% by mass or more, and even more preferably 0.002% by mass or more from the viewpoint of improving the polishing rate and reducing the surface roughness (haze), and from the same viewpoint, it is preferably 0.05% by mass or less, more preferably 0.03% by mass or less, even more preferably 0.01% by mass or less, and even more preferably 0.006% by mass or less. More specifically, the content of component B in the polishing liquid composition of the present disclosure is preferably 0.0005% by mass or more and 0.05% by mass or less, more preferably 0.001% by mass or more and 0.03% by mass or less, even more preferably 0.002% by mass or more and 0.01% by mass or less, and even more preferably 0.002% by mass or more and 0.005% by mass or less. When component B is a combination of two or more kinds, the content of component B refers to the total content thereof.

[0033] From the viewpoints of improving the polishing rate and reducing the surface roughness (haze), the ratio B / A of the content of component B to the content of component A (mass ratio B / A) in the polishing liquid composition of the present disclosure is preferably 0.002 or more, more preferably 0.01 or more, even more preferably 0.025 or more, and preferably 1 or less, more preferably 0.5 or less, and even more preferably 0.1 or less. From the same viewpoint, the mass ratio B / A in the polishing liquid composition of the present disclosure is preferably 0.002 or more and 1 or less, more preferably 0.01 or more and 0.5 or less, and even more preferably 0.025 or more and 0.1 or less.

[0034] [Cationic surfactant (ingredient C)] The polishing liquid composition of the present disclosure contains a cationic surfactant (hereinafter also referred to as "component C"). In one or more embodiments, from the viewpoint of reducing surface roughness (haze), component C is preferably at least one of a quaternary ammonium having one or more alkyl groups having 10 to 18 carbon atoms in the molecule or a salt thereof (hereinafter also referred to as "component C1") and a quaternary phosphonium having one or more alkyl groups having 10 to 18 carbon atoms in the molecule or a salt thereof (hereinafter also referred to as "component C2"), and more preferably a quaternary ammonium having one or more alkyl groups having 10 to 18 carbon atoms in the molecule or a salt thereof (component C1). In the present disclosure, "quaternary ammonium having one or more alkyl groups having 10 to 18 carbon atoms in the molecule" means, in one or more embodiments, that at least one alkyl group having 10 to 18 carbon atoms is bonded to a nitrogen atom. In the present disclosure, "quaternary phosphonium having one or more alkyl groups having 10 to 18 carbon atoms in the molecule" means, in one or more embodiments, that at least one alkyl group having 10 to 18 carbon atoms is bonded to a phosphorus atom. From the viewpoint of reducing surface roughness (haze), the number of carbon atoms in the alkyl group is preferably 10 or more, more preferably 12 or more, and preferably 18 or less, and more preferably 16 or less. From the same viewpoint, the number of carbon atoms in the alkyl group is preferably 10 or more and 18 or less, more preferably 12 or more and 18 or less, and more preferably 12 or more and 16 or less. In the case of component C1, the number of alkyl groups having 10 to 18 carbon atoms in the molecule can be 1 or more, 2 or more, 3 or more, or 4, preferably 2 or 3, and more preferably 2. In the case of component C2, the number may be 1 or more, 2 or more, 3 or more, or 4, and preferably 1 or 2. Component C may be one type or a combination of two or more types.

[0035] From the viewpoint of reducing surface roughness (haze), the total number of carbon atoms in the molecule of Component C is preferably 22 or more, more preferably 24 or more, even more preferably 26 or more, and is preferably 38 or less, more preferably 34 or less, and even more preferably 32 or less. From the same viewpoint, the total number of carbon atoms in the molecule of Component C is preferably 22 or more and 38 or less, more preferably 24 or more and 38 or less, even more preferably 26 or more and 38 or less, even more preferably 26 or more and 34 or less, and even more preferably 26 or more and 32 or less.

[0036] From the viewpoint of reducing surface roughness (haze), in one or a plurality of embodiments, Component C is preferably a compound having a structure represented by the following formula (I) or the following formula (II). [ka]

[0037] In the formula (I), R 1 are the same or different and each represents an alkyl group having 10 to 18 carbon atoms; R 2 are the same or different and each represents a hydrocarbon group having 1 to 6 carbon atoms or -(CH2CH2O) n H (wherein n is 1 to 3), Z is a phosphorus atom, and X - is the counter ion. In the formula (II), R 1 are the same or different and each represents an alkyl group having 10 to 18 carbon atoms; R 2 are the same or different and each represents a hydrocarbon group having 1 to 6 carbon atoms or -(CH2CH2O) n H (wherein n is 1 to 3), Z is a nitrogen atom or a phosphorus atom, and X - is the counter ion. In the above formulas (I) and (II), R 2 From the viewpoint of reducing surface roughness (haze), the counter ion is preferably a hydrocarbon group having 1 to 6 carbon atoms. - ), hydrogen carbonate ion (HCO3 - ) etc.

[0038] In one or more embodiments, the component C1 may be at least one selected from hexadecyltrimethylammonium salts and dialkyldimethylammonium salts (mixtures of 12 to 18 carbon atoms). In one or more embodiments, component C2 may be at least one selected from alkyl (a mixture of 12 to 18 carbon atoms) trihexyl phosphonium salts, hexadecyl tributyl phosphonium salts, and trihexyl tetradecyl phosphonium salts.

[0039] The content of component C in the polishing liquid composition of the present disclosure is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, and even more preferably 0.003% by mass or more from the viewpoint of reducing surface roughness (haze), and is preferably 0.005% by mass or less from the viewpoint of improving the storage stability of the polishing liquid and concentrate. From the same viewpoint, the content of component C in the polishing liquid composition of the present disclosure is preferably 0.001% by mass or more and 0.005% by mass or less, more preferably 0.002% by mass or more and 0.005% by mass or less, and even more preferably 0.003% by mass or more and 0.005% by mass or less. When component C is a combination of two or more kinds, the content of component C refers to the total content thereof.

[0040] The ratio C / A (mass ratio C / A) of the content of component C to the content of component A in the polishing liquid composition of the present disclosure is preferably 0.005 or more, more preferably 0.010 or more, and even more preferably 0.015 or more, from the viewpoint of reducing surface roughness (haze), and is preferably 0.060 or less, more preferably 0.050 or less, and even more preferably 0.040 or less, from the viewpoint of improving the storage stability of the polishing liquid and concentrate. From the same viewpoint, the mass ratio C / A in the polishing liquid composition of the present disclosure is preferably 0.005 or more and 0.060 or less, more preferably 0.010 or more and 0.050 or less, and even more preferably 0.010 or more and 0.040 or less.

[0041] [Nonionic surfactant (ingredient D)] The polishing liquid composition of the present disclosure contains a nonionic surfactant (hereinafter, also referred to as "component D"). In one or more embodiments, component D is preferably a polyoxyethylene alkyl ether from the viewpoint of improving the storage stability of the polishing liquid and the concentrate. The alkyl group of the polyoxyethylene alkyl ether is preferably a hydrocarbon group having 8 to 22 carbon atoms, more preferably a straight-chain or branched-chain alkyl group having 8 to 18 carbon atoms, from the viewpoint of improving the storage stability of the polishing liquid and concentrate. The number of carbon atoms in the alkyl group is preferably 8 or more, more preferably 10 or more, and even more preferably 12 or more, from the viewpoint of improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, is preferably 22 or less, more preferably 18 or less, and even more preferably 16 or less. Examples of the alkyl group include at least one selected from an octyl group, a 2-ethylhexyl group, a decyl group, an isodecyl group, a 2-propylheptyl group, a dodecyl group, a tridecyl group, a tetradecyl group, and a 2-octyldodecyl group. From the viewpoint of improving the storage stability of the polishing liquid and the concentrate, the average number of moles of ethyleneoxy groups added in the polyoxyethylene alkyl ether is preferably 3 or more, more preferably 4 or more, and even more preferably 5 or more, and from the same viewpoint, it is preferably 12 or less, more preferably 10 or less, and even more preferably 8 or less. More specifically, the average number of moles of ethyleneoxy groups added in the polyoxyethylene alkyl ether is preferably 3 or more and 12 or less, more preferably 4 or more and 12 or less, and even more preferably 5 or more and 8 or less. Component D may be one type or a combination of two or more types.

[0042] Examples of component D include at least one selected from polyoxyethylene (5) dodecyl ether, polyoxyethylene (6) dodecyl ether, polyoxyethylene (12) dodecyl ether, polyoxyethylene (5) branched alkyl (hybrid product having 11 to 15 carbon atoms) ether, and polyoxyethylene (9) branched alkyl (hybrid product having 11 to 15 carbon atoms). The numbers in parentheses indicate the average number of moles added.

[0043] The content of component D in the polishing liquid composition of the present disclosure is preferably 0.01 mass% or more, more preferably 0.02 mass% or more, and even more preferably 0.04 mass% or more from the viewpoint of improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, it is preferably 0.15 mass% or less, more preferably 0.12 mass% or less, and even more preferably 0.10 mass% or less. More specifically, the content of component D in the polishing liquid composition of the present disclosure is preferably 0.01 mass% or more and 0.15 mass% or less, more preferably 0.02 mass% or more and 0.15 mass% or less, and even more preferably 0.03 mass% or more and 0.12 mass% or less. When component D is a combination of two or more types, the content of component D refers to the total content thereof.

[0044] In the polishing liquid composition of the present disclosure, the mass ratio D / A of the content of component D to the content of component A is preferably 0.2 or more, more preferably 0.3 or more, and even more preferably 0.4 or more, from the viewpoint of improving the polishing rate and improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, it is preferably 1.2 or less, more preferably 1.1 or less, and even more preferably 1.0 or less. From the same viewpoint, the mass ratio D / A in the polishing liquid composition of the present disclosure is preferably 0.2 or more and 1.2 or less, more preferably 0.3 or more and 1.1 or less, and even more preferably 0.4 or more and 1.0 or less.

[0045] In the polishing liquid composition of the present disclosure, the mass ratio D / B of the content of component D to the content of component B is preferably 10 or more, more preferably 13 or more, and even more preferably 16 or more, from the viewpoints of improving the polishing rate and improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, it is preferably 45 or less, more preferably 40 or less, and even more preferably 35 or less. From the same viewpoint, the mass ratio D / B in the polishing liquid composition of the present disclosure is preferably 10 or more and 45 or less, more preferably 13 or more and 45 or less, and even more preferably 16 or more and 35 or less.

[0046] The mass ratio D / C of the content of component D to the content of component C in the polishing liquid composition of the present disclosure is preferably 5 or more, more preferably 10 or more, and even more preferably 20 or more, from the viewpoint of reducing surface roughness (haze) and improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, it is preferably 70 or less, more preferably 60 or less, and even more preferably 50 or less. From the same viewpoint, the mass ratio D / C in the polishing liquid composition of the present disclosure is preferably 5 or more and 70 or less, more preferably 10 or more and 60 or less, and even more preferably 20 or more and 50 or less.

[0047] [water] In one or more embodiments, the polishing liquid composition of the present disclosure may contain water. Examples of water include ion-exchanged water and ultrapure water, and ultrapure water is preferred from the viewpoint of reducing surface roughness (haze). The content of water in the polishing liquid composition of the present disclosure may be, for example, the remainder of component A, component B, component C, component D, and other components described below.

[0048] [Water-soluble polymer (component E)] In one or more embodiments, the polishing liquid composition of the present disclosure may further contain at least one water-soluble polymer selected from hydroxyalkyl cellulose, polyglycerin, and water-soluble polymers containing a nitrogen-containing group, from the viewpoint of achieving both wettability and reduced surface roughness (haze). Component E may be one type or a combination of two or more types. In the present disclosure, "water-soluble" refers to having a solubility of 0.5 g / 100 mL or more in water (20° C.), preferably a solubility of 2 g / 100 mL or more. The hydroxyalkyl cellulose may be at least one selected from hydroxyethyl cellulose (HEC), hydroxypropyl cellulose, and hydroxybutyl cellulose. From the viewpoint of achieving both wettability and reduced surface roughness (haze), the water-soluble polymer containing a nitrogen-containing group is preferably an amino group-containing water-soluble polymer containing a structural unit derived from allylamine or diallylamine, and examples thereof include allylamine polymers, allylamine hydrochloride polymers, allylamine hydrochloride-sulfur dioxide copolymers, diallylamine polymers, diallylamine hydrochloride polymers, diallylamine hydrochloride-sulfur dioxide copolymers, allylamine acetate-diallylamine acetate copolymers, allylamine hydrochloride-dimethylallylamine hydrochloride copolymers, methyldiallylamine polymers, and methyldiallylamine hydrochloride polymers. and at least one selected from the group consisting of diallylamine hydrochloride / sulfur dioxide copolymer, methyl diallylamine / sulfur dioxide copolymer, diallyldimethylammonium chloride polymer, diallyldimethylammonium chloride-sulfur dioxide copolymer, diallyldimethylammonium chloride-acrylamide copolymer, diallylamine amide sulfate-maleic acid copolymer, methyl diallylamine-maleic acid copolymer, diallyldimethylammonium chloride-maleic acid copolymer, and maleic acid-diallyldimethylammonium ethyl sulfate-sulfur dioxide copolymer. Among these, from the viewpoint of achieving both wettability and reduced surface roughness (haze), Component E is preferably at least one selected from hydroxyethyl cellulose (HEC), polyglycerin, and methyldiallylamine / sulfur dioxide copolymer.

[0049] When component E is a hydroxyalkyl cellulose, the weight average molecular weight of component E is preferably 50,000 or more, more preferably 100,000 or more, and even more preferably 150,000 or more, from the viewpoint of achieving both wettability and reduced surface roughness (haze), and is preferably 500,000 or less, more preferably 400,000 or less, and even more preferably 300,000 or less. When component E is a polyglycerol, from the same viewpoint, the weight average molecular weight of component E is preferably 2,000 or more, more preferably 2,500 or more, even more preferably 2,800 or more, and is preferably 10,000 or less, more preferably 8,000 or less, even more preferably 6,000 or less. When Component E is a water-soluble polymer containing a nitrogen-containing group, from the same viewpoint, the weight average molecular weight of Component E is preferably 800 or more, more preferably 1,000 or more, and even more preferably 2,000 or more, and is preferably 200,000 or less, more preferably 100,000 or less, and even more preferably 60,000 or less. The weight average molecular weight of Component E can be measured by the method described in the Examples below.

[0050] When the polishing liquid composition of the present disclosure contains component E, the content of component E in the polishing liquid composition of the present disclosure is preferably 0.004 mass% or more, more preferably 0.005 mass% or more, even more preferably 0.006 mass% or more, and preferably 0.02 mass% or less, more preferably 0.01 mass% or less, and even more preferably 0.008 mass% or less, from the viewpoint of achieving both wettability and surface roughness (haze) reduction. More specifically, the content of component E in the polishing liquid composition of the present disclosure is preferably 0.004 mass% to 0.02 mass% or less, more preferably 0.005 mass% to 0.02 mass% or less, more preferably 0.006 mass% to 0.01 mass% or less, and even more preferably 0.006 mass% to 0.008 mass% or less. When component E is a combination of two or more types, the content of component E refers to the total content thereof.

[0051] [Polyethylene glycol (component F)] In one or more embodiments, the polishing liquid composition of the present disclosure may further contain polyethylene glycol (hereinafter, also referred to as "component F").

[0052] From the viewpoint of reducing surface roughness (haze), the weight average molecular weight of component F is preferably 600 or more, more preferably 800 or more, and even more preferably 1000 or more, and from the viewpoint of imparting wettability, it is preferably less than 10,000, more preferably 8,000 or less, and even more preferably 6,000 or less. From the viewpoint of imparting wettability, the weight average molecular weight of component F is preferably 600 or more and less than 10,000, preferably 800 or more and 8,000 or less, and even more preferably 1,000 or more and 6,000 or less. Component F may be one type or a combination of two or more types.

[0053] When the polishing liquid composition of the present disclosure contains component F, the content of component F in the polishing liquid composition of the present disclosure is preferably 0.001 mass% or more, more preferably 0.0015 mass% or more, and even more preferably 0.002 mass% or more from the viewpoint of reducing surface roughness (haze), and is preferably 0.01 mass% or less, more preferably 0.005 mass% or less, and even more preferably 0.003 mass% or less from the viewpoint of imparting wettability. The content of component F in the polishing liquid composition of the present disclosure is preferably 0.001 mass% or more and 0.01 mass% or less, more preferably 0.0015 mass% or more and 0.005 mass% or less, and even more preferably 0.002 mass% or more and 0.003 mass% or less from the viewpoint of achieving both reduction in surface roughness (haze) and imparting wettability. When component F is a combination of two or more types, the content of component F refers to the total content thereof.

[0054] [Other ingredients] The polishing liquid composition of the present disclosure may further contain other components to the extent that the effects of the present disclosure are not impaired. In one or more embodiments, the other components include at least one selected from a pH adjuster other than Component B, a surfactant other than Component C and Component D, a water-soluble polymer other than Component E and Component F, a preservative, an alcohol, a chelating agent, and an oxidizing agent.

[0055] The pH of the polishing liquid composition of the present disclosure is preferably 9 or more, more preferably 9.5 or more, even more preferably 10 or more, and is preferably 12 or less, more preferably 11.5 or less, and even more preferably 11 or less, from the viewpoint of reducing surface roughness (haze). From the same viewpoint, the pH of the polishing liquid composition of the present disclosure is preferably 9 or more and 12 or less, more preferably 9.5 or more and 11.5 or less, and even more preferably 10 or more and 11 or less. The pH of the polishing liquid composition of the present disclosure can be adjusted using component B or a known pH adjuster. In the present disclosure, the above pH is the value of the polishing liquid composition at 25°C, and can be measured using a pH meter. The above pH can be, for example, a value measured by the method described in the Examples.

[0056] The polishing liquid composition of the present disclosure can be produced, for example, by blending component A, component B, component C, component D, and, if desired, optional components (component E, component F, and other components) by a known method. That is, in another aspect, the present disclosure relates to a method for producing a polishing liquid composition, which includes a step of blending at least component A, component B, component C, and component D. In the present disclosure, "blending" includes mixing component A, component B, component C, component D, and optional components (component E, component F, and other components) simultaneously or in any order as necessary. The blending can be performed using, for example, a stirrer such as a homomixer, a homogenizer, an ultrasonic disperser, a wet ball mill, or a bead mill. The preferred blending amount of each component in the method for producing a polishing liquid composition of the present disclosure can be the same as the preferred content of each component in the polishing liquid composition of the present disclosure described above.

[0057] In the present disclosure, "the content of each component in the polishing liquid composition" refers to the content of each component at the time of use, that is, at the time when the polishing liquid composition is started to be used for polishing.

[0058] [Polishing composition concentrate] The polishing liquid composition of the present disclosure may be produced as a concentrate from the viewpoint of storage and transportation, and diluted at the time of use. The concentration ratio is preferably 2 times or more, more preferably 10 times or more, even more preferably 30 times or more, and even more preferably 50 times or more, on a volume basis, from the viewpoint of production and transportation costs and from the viewpoint of improving the storage stability of the polishing liquid and concentrate, and is preferably 180 times or less, more preferably 140 times or less, even more preferably 100 times or less, and even more preferably 70 times or less, from the viewpoint of improving the storage stability of the polishing liquid and concentrate. The polishing liquid composition concentrate of the present disclosure can be used by diluting it with water so that the content of each component at the time of use becomes the above-mentioned content (i.e., the content at the time of use). In the present disclosure, the "time of use" of the polishing liquid composition concentrate refers to the state in which the polishing liquid composition concentrate is diluted. In one or more embodiments, the present disclosure relates to a concentrate of the polishing liquid composition of the present disclosure. In one or more embodiments, the present disclosure relates to a method for producing a polishing liquid composition, the method comprising the step of diluting a concentrate of the polishing liquid composition of the present disclosure. In one or more embodiments, the dilution step comprises diluting the concentrate by 2 to 180 times on a volume basis. In one or more embodiments, the present disclosure relates to a method for producing a concentrate of the polishing liquid composition of the present disclosure, the method including a step of blending at least silica particles (component A), a nitrogen-containing basic compound (component B), a cationic surfactant (component C), and a nonionic surfactant (component D). When the polishing liquid composition of the present disclosure is a concentrate, the content of component A in the concentrate of the polishing liquid composition of the present disclosure is, in terms of SiO2, preferably 0.1 mass% or more, more preferably 5.0 mass% or more, and even more preferably 9.0 mass% or more, from the viewpoint of improving the polishing rate and reducing surface roughness (haze), and from the viewpoint of improving the storage stability of the polishing liquid and concentrate, preferably 20.0 mass% or less, more preferably 15.0 mass% or less, and even more preferably 11.0 mass% or less. More specifically, the content of component A in the concentrate of the polishing liquid composition of the present disclosure is, in terms of SiO2, preferably 0.1 mass% or more and 20.0 mass% or less, more preferably 5.0 mass% or more and 15.0 mass% or less, and even more preferably 9.0 mass% or more and 11.0 mass% or less. The content of component A in the concentrate of the polishing liquid composition of the present disclosure, in which the presence or absence of component D results in a difference in the stability of the concentrate, may be, in one or more embodiments, 0.1 mass % or more, 5.0 mass % or more, or 9.0 mass % or more. When the polishing liquid composition of the present disclosure is a concentrate, the content of component B in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, and even more preferably 0.2% by mass or more from the viewpoint of improving the polishing rate, and is preferably 5.0% by mass or less, more preferably 3.0% by mass or less, even more preferably 1.0% by mass or less, and even more preferably 0.6% by mass or less from the viewpoint of improving the storage stability of the polishing liquid and the concentrate. More specifically, the content of component B in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.05% by mass or more and 5.0% by mass or less, more preferably 0.1% by mass or more and 3.0% by mass or less, even more preferably 0.2% by mass or more and 1.0% by mass or less, and even more preferably 0.2% by mass or more and 0.5% by mass or less. When the polishing liquid composition of the present disclosure is a concentrate, the content of component C in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.1 mass% or more, more preferably 0.2 mass% or more, and even more preferably 0.3 mass% or more from the viewpoint of reducing surface roughness (haze), and is preferably 0.5 mass% or less from the viewpoint of storage stability of the polishing liquid and the concentrate. More specifically, the content of component C in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.1 mass% or more and 0.5 mass% or less, more preferably 0.2 mass% or more and 0.5 mass% or less, and even more preferably 0.3 mass% or more and 0.5 mass% or less. When the polishing liquid composition of the present disclosure is a concentrate, the content of component D in the concentrate of the polishing liquid composition of the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 4% by mass or more from the viewpoint of improving the storage stability of the polishing liquid and the concentrate, and from the same viewpoint, it is preferably 15% by mass or less, more preferably 12% by mass or less, and even more preferably 10% by mass or less. More specifically, the content of component D in the concentrate of the polishing liquid composition of the present disclosure is preferably 1% by mass or more and 15% by mass or less, more preferably 2% by mass or more and 12% by mass or less, and even more preferably 4% by mass or more and 10% by mass or less. When the polishing liquid composition of the present disclosure is a concentrate, the content of component E in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.4 mass% or more, more preferably 0.5 mass% or more, even more preferably 0.6 mass% or more, and preferably 2.0 mass% or less, more preferably 1.0 mass% or less, and even more preferably 0.8 mass% or less, from the viewpoint of achieving both wettability and reduced surface roughness (haze). More specifically, the content of component E in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.4 mass% or more and 2.0 mass% or less, more preferably 0.5 mass% or more and 2.0 mass% or less, more preferably 0.6 mass% or more and 1.0 mass% or less, and even more preferably 0.6 mass% or more and 0.8 mass% or less. When the polishing liquid composition of the present disclosure is a concentrate, the content of component F in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.10% by mass or more, more preferably 0.15% by mass or more, and even more preferably 0.20% by mass or more from the viewpoint of reducing surface roughness (haze), and is preferably 1.00% by mass or less, more preferably 0.50% by mass or less, and even more preferably 0.30% by mass or less from the viewpoint of imparting wettability. More specifically, the content of component F in the concentrate of the polishing liquid composition of the present disclosure is preferably 0.10% by mass or more and 1.00% by mass or less, more preferably 0.15% by mass or more and 1.00% by mass or less, and even more preferably 0.20% by mass or more and 0.50% by mass or less from the viewpoint of achieving both reduction in surface roughness (haze) and imparting wettability. When the polishing liquid composition of the present disclosure is a concentrate, the pH of the polishing liquid composition concentrate of the present disclosure is preferably 9 or more, more preferably 9.5 or more, more preferably 10 or more, and preferably 12 or less, more preferably 11.5 or less, and even more preferably 11 or less, from the viewpoint of reducing surface roughness (haze). From the same viewpoint, the pH of the polishing liquid composition concentrate of the present disclosure is preferably 9 or more and 12 or less, more preferably 9.5 or more and 11.5 or less, and even more preferably 10 or more and 11 or less. In the present disclosure, the above pH is the value of the polishing liquid composition concentrate at 25°C, and can be measured using a pH meter. The above pH can be, for example, a value measured by the method described in the Examples.

[0059] [Polished silicon substrate] In one or more embodiments, the polishing liquid composition of the present disclosure is a polishing composition for silicon substrates, and can be used, for example, in a polishing step of polishing a silicon substrate in a method for manufacturing a semiconductor substrate, or in a polishing step of polishing a silicon substrate in a method for polishing a silicon substrate. In one or more embodiments, the silicon substrate to be polished using the polishing liquid composition of the present disclosure may be a silicon substrate, and in one or more embodiments, a single crystal silicon substrate or a polysilicon substrate. In addition, the resistivity of the silicon substrate is preferably 0.0001 Ω·cm or more, more preferably 0.001 Ω·cm or more, even more preferably 0.01 Ω·cm or more, even more preferably 0.1 Ω·cm or more, and is preferably 100 Ω·cm or less, more preferably 50 Ω·cm or less, and even more preferably 20 Ω·cm or less, from the viewpoint of achieving both an improvement in the polishing rate and a reduction in the surface roughness (haze).

[0060] [Polishing liquid kit] In another aspect, the present disclosure relates to a polishing liquid kit for producing a concentrate of the polishing liquid composition of the present disclosure (hereinafter, may be abbreviated as "the kit of the present disclosure"). According to the kit of the present disclosure, a polishing liquid composition having excellent storage stability of the polishing liquid and the concentrate can be obtained. In one or more embodiments, the kit of the present disclosure may be a polishing liquid kit containing a solution containing components A, B, C, and D. The solution may contain the above-mentioned optional components (component E, component F, and other components) as necessary. The solution may be diluted with water as necessary at the time of use. In one or more embodiments, the kit of the present disclosure includes a polishing liquid kit that contains a silica dispersion (first liquid) containing component A and component B, and an additive aqueous solution (second liquid) containing component C and component D in a mutually unmixed state, and that is mixed at the time of use and diluted with water as necessary. The silica dispersion (first liquid) and the additive aqueous solution (second liquid) may contain a portion of the water used in preparing the polishing liquid composition. The silica dispersion (first liquid) and the additive aqueous solution (second liquid) may each contain the above-mentioned optional components (component E, component F, and other components) as necessary.

[0061] [Additive composition for polishing silicon substrate] In one aspect, the present disclosure relates to an additive composition for polishing silicon substrates (hereinafter, "additive composition of the present disclosure"), which comprises component C and the following component D. The additive composition of the present disclosure may contain the above-mentioned optional components (component E, component F, and other components) as necessary. In one or more embodiments, the additive composition of the present disclosure is mixed with a silica dispersion containing component A, component B, and water, and water or an optional component is further mixed as necessary, thereby obtaining the polishing liquid composition of the present disclosure or a concentrate thereof.

[0062] The content of component C in the additive composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and even more preferably 0.3% by mass or more from the viewpoint of reducing surface roughness (haze), and is preferably 0.5% by mass or less from the viewpoint of improving the storage stability of the polishing liquid and concentrate. From the same viewpoint, the content of component C in the additive composition of the present disclosure is preferably 0.1% by mass or more and 0.5% by mass or less, more preferably 0.2% by mass or more and 0.5% by mass or less, and even more preferably 0.3% by mass or more and 0.5% by mass or less. From the viewpoint of improving the storage stability of the polishing liquid and the concentrate, the content of component D in the additive composition of the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 4% by mass or more, and from the same viewpoint, it is preferably 15% by mass or less, more preferably 12% by mass or less, and even more preferably 10% by mass or less. From the same viewpoint, the content of component D in the additive composition of the present disclosure is preferably 1% by mass or more and 15% by mass or less, more preferably 2% by mass or more and 12% by mass or less, and even more preferably 4% by mass or more and 10% by mass or less. In the additive composition of the present disclosure, the mass ratio D / C of the content of component D to the content of component C is preferably 5 or more, more preferably 10 or more, and even more preferably 20 or more, from the viewpoint of reducing surface roughness (haze) and improving the storage stability of the polishing liquid and concentrate, and from the same viewpoint, it is preferably 70 or less, more preferably 60 or less, and even more preferably 50 or less. From the same viewpoint, the mass ratio D / C in the additive composition of the present disclosure is preferably 5 or more and 70 or less, more preferably 10 or more and 60 or less, and even more preferably 20 or more and 50 or less.

[0063] [Silicon substrate polishing method] In another aspect, the present disclosure relates to a method for polishing a silicon substrate (hereinafter also referred to as the polishing method of the present disclosure), which includes a step of polishing a silicon substrate to be polished using the polishing liquid composition of the present disclosure (hereinafter also referred to as the "polishing step"). According to the polishing method of the present disclosure, the polishing liquid composition of the present disclosure, which has excellent storage stability of the polishing liquid and concentrate, is used, so that high-quality semiconductor substrates can be produced with high yield and good productivity. In one or more embodiments, the polishing method of the present disclosure includes a step of blending the additive composition of the present disclosure, silica particles (component A), and a nitrogen-containing basic compound (component B) to obtain a concentrate of the polishing liquid composition of the present disclosure. In one or more embodiments, the polishing method of the present disclosure includes a step of diluting the concentrate of the present disclosure. In one or more embodiments, the step of diluting the concentrate includes diluting the concentrate by 2 to 180 times on a volume basis.

[0064] In the polishing step of the polishing method of the present disclosure, for example, the silicon substrate can be pressed against a platen to which a polishing pad is attached, and the silicon substrate can be polished at a polishing pressure of 3 to 20 kPa. In the present disclosure, the polishing pressure refers to the pressure of the platen applied to the surface of the silicon substrate during polishing.

[0065] In the polishing step of the polishing method of the present disclosure, for example, a silicon substrate to be polished can be pressed against a platen to which a polishing pad is attached, and the silicon substrate to be polished can be polished with a polishing liquid composition and a polishing pad surface temperature of 15° C. to 40° C. From the viewpoint of reducing surface roughness (haze), the temperature of the polishing liquid composition and the polishing pad surface temperature are preferably 15° C. or higher or 20° C. or higher, and preferably 40° C. or lower or 30° C. or lower.

[0066] [Method of manufacturing semiconductor substrate] In another aspect, the present disclosure relates to a method for producing a semiconductor substrate (hereinafter also referred to as the "semiconductor substrate production method of the present disclosure"), which includes a step of polishing a silicon substrate to be polished using the polishing liquid composition of the present disclosure (hereinafter also referred to as the "polishing step") and a step of cleaning the polished silicon substrate (hereinafter also referred to as the "cleaning step"). According to the semiconductor substrate production method of the present disclosure, by using the polishing liquid composition of the present disclosure, which has excellent storage stability of the polishing liquid and concentrate, a high-quality semiconductor substrate can be produced with high yield and good productivity. In one or more embodiments, the method for producing a semiconductor substrate of the present disclosure includes a step of blending the additive composition of the present disclosure, silica particles (component A), and a nitrogen-containing basic compound (component B) to obtain a concentrate of the polishing liquid composition of the present disclosure. In one or more embodiments, the method for producing a semiconductor substrate of the present disclosure includes a step of diluting the concentrate of the present disclosure. In one or more embodiments, the step of diluting the concentrate includes diluting the concentrate by 2 to 180 times on a volume basis.

[0067] The polishing step in the semiconductor substrate manufacturing method of the present disclosure can include, for example, a lapping (rough polishing) step of planarizing a single crystal silicon substrate obtained by slicing a single crystal silicon ingot into a thin disk shape, and a finish polishing step of etching the lapped single crystal silicon substrate and then mirror-finishing the surface of the single crystal silicon substrate. The polishing liquid composition of the present disclosure is more preferably used in the finish polishing step from the viewpoint of reducing surface roughness (haze).

[0068] The polishing step in the semiconductor substrate manufacturing method of the present disclosure can be performed under the same conditions (polishing pressure, polishing liquid composition, surface temperature of polishing pad, etc.) as those in the polishing step in the polishing method of the present disclosure described above.

[0069] In one or more embodiments, the method for producing a semiconductor substrate according to the present disclosure may include a dilution step of diluting a concentrate of the polishing liquid composition according to the present disclosure prior to the polishing step. The dilution medium may be, for example, water.

[0070] In the cleaning step in the semiconductor substrate manufacturing method of the present disclosure, it is preferable to perform inorganic cleaning from the viewpoint of reducing residues on the silicon substrate surface. Examples of the cleaning agent used in inorganic cleaning include inorganic cleaning agents containing at least one selected from hydrogen peroxide, ammonia, hydrochloric acid, sulfuric acid, hydrofluoric acid, and ozone water.

[0071] In one or a plurality of embodiments, the semiconductor substrate manufacturing method of the present disclosure can further include, after the cleaning step, a step of rinsing the cleaned silicon substrate with water and drying it. EXAMPLES

[0072] The present disclosure will be described in more detail below with reference to examples, but these are merely illustrative and the present disclosure is not limited to these examples.

[0073] 1. Preparation of Concentrate of Polishing Composition (Examples 1 to 8 and Comparative Example 1) Each component shown in Table 1 and ultrapure water were mixed with stirring to prepare concentrates (concentration ratio: 100 times) of the polishing liquid compositions of Examples 1 to 8 and Comparative Example 1. The content of each component in Table 1 is the content of each component (mass %, active content) in the concentrate of each polishing liquid composition. The content of ultrapure water is the remainder excluding components A, B, C, D, E and F. The pH of each polishing liquid composition concentrate at 25°C was 10.

[0074] The following components A, B, C, D, E and F were used in preparing the concentrates of each polishing composition. (Component A) Colloidal silica [average primary particle size 25 nm, average secondary particle size 49 nm, degree of association 2.0] (Component B) Ammonia [28% by weight ammonia water, Kishida Chemical Co., Ltd., special grade reagent] (Component C) Dialkyl(C12-18)dimethylammonium chloride [Kao Corporation, Kohtamin D2345P] (in formula (II), R 1 : Alkyl group with 12 to 18 carbon atoms (hybrid), R 2 :CH3, Z:N, X:Cl - ) Hexadecyltrimethylammonium chloride [Tokyo Chemical Industry Co., Ltd.] (Component D) Polyoxyethylene (5) dodecyl ether [EO average number of moles added: 5, alkyl group: dodecyl group (carbon number: 12)] Polyoxyethylene (12) dodecyl ether [EO average number of moles added: 12, alkyl group: dodecyl group (carbon number: 12)] Polyoxyethylene (5) branched alkyl (C11-15) ether [EO average number of moles added: 5, alkyl group: branched alkyl group with 11 to 15 carbon atoms (hybrid product)] Polyoxyethylene (9) branched alkyl (C11-15) ether [EO average number of moles added: 9, alkyl group: branched alkyl group with 11 to 15 carbon atoms (hybrid product)] Polyoxyethylene (6) dodecyl ether [EO average number of moles added: 6, alkyl group: dodecyl group (carbon number: 12)] (Component E) Polyglycerin [Daicel Corporation, XPW, polymerization degree 40, weight average molecular weight 2,980] HEC: Hydroxyethyl cellulose [Daicel, SE-400, weight average molecular weight 250,000] (Component F) PEG 1000 [Polyethylene glycol, NOF Corp., PEG#1000, weight average molecular weight 1,000]

[0075] 2.Measuring methods for various parameters (1) Measurement of the average primary particle size of silica particles (component A) The average primary particle size (nm) of component A is calculated by the BET (nitrogen adsorption) method. 2 / g) using the following formula: Average primary particle diameter (nm)=2727 / S The specific surface area S of component A was measured by carrying out the following [pretreatment], and then weighing out approximately 0.1 g of the measurement sample into a measurement cell to four decimal places, drying the sample for 30 minutes in an atmosphere at 110°C immediately before measuring the specific surface area, and then measuring the specific surface area by the nitrogen adsorption method (BET method) using a specific surface area measuring device (Micromeritic automatic specific surface area measuring device "Flowsorb III2305", manufactured by Shimadzu Corporation). [Preprocessing] (a) The pH of the slurry of component A is adjusted to 2.5±0.1 with an aqueous solution of nitric acid. (b) The slurry of component A, adjusted to pH 2.5±0.1, is placed in a petri dish and dried in a hot air dryer at 150°C for 1 hour. (c) After drying, the obtained sample is finely ground in an agate mortar. (d) The ground sample is suspended in ion-exchanged water at 40°C and filtered through a membrane filter with a pore size of 1 μm. (e) The residue on the filter is washed five times with 20 g of ion-exchanged water (40°C). (f) The filter with the filtrate attached thereto is placed in a petri dish and dried in an atmosphere at 110°C for 4 hours. (g) The dried filtrate (component A) was taken, being careful not to mix in any filter debris, and finely ground in a mortar to obtain a measurement sample.

[0076] (2) Average secondary particle size of silica particles (component A) The average secondary particle diameter (nm) of component A was measured by adding an abrasive to ion-exchanged water so that the concentration of component A was 0.25 mass%, and then placing the resulting aqueous dispersion in a disposable sizing cuvette (a 10 mm polystyrene cell) to a height of 10 mm from the bottom, and using a dynamic light scattering method (apparatus name: Zetasizer Nano ZS, manufactured by Sysmex Corporation).

[0077] (3) Measurement of weight-average molecular weight of water-soluble polymers (component E, component F) The weight average molecular weight of the water-soluble polymers (component E and component F) was calculated based on the peaks in the chromatogram obtained by applying gel permeation chromatography (GPC) under the following conditions. <Measurement conditions> Equipment: HLC-8320 GPC (Tosoh Corporation, detector integrated) Column: α-M + α-M Eluent: 0.15 mol / L Na2SO4, 1% by mass acetic acid, solvent: water Flow rate: 1.0mL / min Column temperature: 40℃ Detector: Shodex RI SE-61 differential refractive index detector Standard: Pullulan with known molecular weight

[0078] (4) pH of the polishing composition The pH at 25° C. was measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM-30G), and was the value measured one minute after immersing the electrodes of the pH meter in the polishing composition or a concentrate thereof.

[0079] 3. Evaluation of polishing composition [Evaluation of storage stability of concentrate] 10 g of each polishing composition concentrate was placed in a glass bottle (volume 20 mL), sealed, shaken up and down 10 times, and left to stand for 24 hours. The appearance was then visually inspected, and the storage stability of the concentrate was evaluated according to the following evaluation criteria. The polishing composition concentrates were stored in a room at 25°C. The results are shown in Table 1. <Evaluation criteria> A: No agglomeration or separation occurs and dispersion stability is maintained 24 hours after the concentrated polishing composition is prepared. B: Aggregates and / or separation occurred 24 hours after the concentrated polishing composition was prepared.

[0080] [Table 1]

[0081] As shown in Table 1, it was found that the concentrates of the polishing liquid compositions of Examples 1 to 8 were superior to Comparative Example 1 in terms of storage stability. [Industrial Applicability]

[0082] The polishing composition of the present disclosure is useful as a polishing composition used in the production process of various semiconductor substrates.

Claims

1. A polishing composition for silicon substrates comprising the following component A, component B, component C, and component D: Component A: Silica particles Component B: Nitrogen-containing basic compound Component C: Cationic surfactant Component D: Nonionic surfactant

2. 2. The polishing composition according to claim 1, wherein component D is a polyoxyethylene alkyl ether.

3. 3. The polishing composition according to claim 1, wherein the average primary particle size of Component A is 10 nm or more and 150 nm or less.

4. 3. The polishing composition according to claim 1, wherein component C is a quaternary ammonium or a salt thereof (component C1) having one or more alkyl groups having 10 to 18 carbon atoms in the molecule.

5. 3. The polishing composition according to claim 1, further comprising at least one water-soluble polymer (component E) selected from the group consisting of hydroxyalkyl cellulose, polyglycerin, and a water-soluble polymer containing a nitrogen-containing group.

6. The polishing composition according to claim 1 or 2, further comprising polyethylene glycol (component F).

7. A concentrate of the polishing composition according to claim 1 or 2.

8. A method for producing a polishing composition, comprising a step of diluting the polishing composition concentrate according to claim 1 or 2.

9. A method for producing a concentrate of a polishing composition, comprising a step of blending at least silica particles (component A), a nitrogen-containing basic compound (component B), a cationic surfactant (component C), and a nonionic surfactant (component D).

10. An additive composition for polishing silicon substrates, comprising the following component C and component D: Component C: Cationic surfactant Component D: Nonionic surfactant

11. 11. The additive composition according to claim 10, wherein the mass ratio D / C of the content of component D to the content of component C is 5 or more and 70 or less.

12. A method for polishing a silicon substrate, comprising the step of polishing a silicon substrate to be polished with the polishing composition according to claim 1.

13. The method for polishing a silicon substrate according to claim 12, comprising the step of diluting the concentrate of the polishing composition according to claim 1.

14. A method for polishing a silicon substrate as described in claim 13, comprising a step of blending an additive composition for polishing a silicon substrate containing the following component C and the following component D with silica particles (component A) and a nitrogen-containing basic compound (component B) to obtain a concentrate of the polishing liquid composition. Component C: Cationic surfactant Component D: Nonionic surfactant

15. A step of polishing a silicon substrate to be polished using the polishing composition according to claim 1; and cleaning the polished silicon substrate.

16. The method for producing a semiconductor substrate according to claim 15, comprising the step of diluting the concentrate of the polishing composition according to claim 1.

17. A method for manufacturing a semiconductor substrate as described in claim 16, comprising a step of blending an additive composition for polishing silicon substrates containing the following component C and the following component D with silica particles (component A) and a nitrogen-containing basic compound (component B) to obtain a concentrate of the polishing liquid composition. Component C: Cationic surfactant Component D: Nonionic surfactant