Measurement method, pattern formation method, article producing method, measurement device, lithography device, and program

Abstract

To provide a technology advantageous for realizing high measurement accuracy.SOLUTION: A measurement method for measuring a substrate includes an imaging step for imaging a plurality of marks provided on the substrate and a treatment step for acquiring information showing a state of the substrate by treating a plurality of evaluation values while giving weight to the plurality of evaluation values obtained from each of images of the plurality of marks.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a measurement method, a pattern forming method, an article manufacturing method, a measurement apparatus, a lithography apparatus, and a program. [Background technology]

[0002] In lithography devices such as exposure devices used in lithography processes, the alignment accuracy between the shot area of ​​the substrate and the original, and the overlay accuracy between different layers on the substrate are important. One method for improving the alignment and overlay accuracy is to select measurement marks and measurement conditions that are less susceptible to the degradation of measurement accuracy caused by changes in the characteristics of the substrate. This maximizes the strength and quality of the detection signal from the measurement marks, enabling high-precision measurements to be achieved.

[0003] Patent Document 1 describes a method for determining the detection range of image processing for an overlay measurement mark in order to improve the accuracy of overlay measurement. The detection range and overlay error for the acquired image of the overlay measurement mark are calculated, and the detection range that minimizes the overlay error is determined. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 3994223 Summary of the Invention [Problem to be solved by the invention]

[0005] If a change occurs in the shape or characteristics of a mark formed on a substrate, the strength and quality of a detection signal from the mark may decrease, leading to a decrease in measurement accuracy.

[0006] An object of the present invention is to provide an advantageous technique for achieving high measurement accuracy. [Means for solving the problem]

[0007] One aspect of the present invention relates to a measurement method for measuring a substrate, the measurement method including: an imaging step of imaging a plurality of marks provided on the substrate; and a processing step of acquiring information indicating a state of the substrate by processing a plurality of evaluation values ​​obtained from each of the images of the plurality of marks imaged in the imaging step while applying weights to the plurality of evaluation values. Effect of the Invention

[0008] According to the present invention, an advantageous technique for achieving high measurement accuracy is provided. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram illustrating a configuration of a measurement device according to a first embodiment. [Diagram 2] 5A to 5C are diagrams for explaining a specific measurement process in the measurement device of the first embodiment. [Diagram 3] 5A to 5C are diagrams for explaining a specific measurement process in the measurement device of the first embodiment. [Figure 4] FIG. 2 is a diagram for explaining a measurement sequence in the measurement device of the first embodiment. [Diagram 5] 5A to 5C are diagrams for explaining a specific measurement process in the measurement device of the first embodiment. [Figure 6] 5A to 5C are diagrams for explaining a weighting measurement sequence in the measurement apparatus of the first embodiment. [Figure 7] 5A to 5C are diagrams for explaining a specific measurement process in the measurement device of the first embodiment. [Figure 8] 5A to 5C are diagrams for explaining a specific measurement process in the measurement device of the first embodiment. [Figure 9] 13 is a diagram for explaining a measurement sequence in the measurement device of the second embodiment. FIG. [Figure 10] 13 is a diagram for explaining a weighting measurement sequence in the measurement apparatus of the second embodiment. FIG. [Figure 11] 10A to 10C are diagrams for explaining a specific measurement process in the measurement device of the second embodiment. [Figure 12] FIG. 13 is a diagram for explaining the configuration of an exposure apparatus according to a third embodiment. [Figure 13] FIG. 13 is a diagram for explaining the sequence of an exposure process of the exposure apparatus of the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted. First Embodiment FIG. 1(a) is a schematic diagram showing a configuration of a measuring apparatus 100 according to one aspect of the present disclosure. The measuring apparatus 100 can be configured as a measuring apparatus that measures a mark formed on a substrate 73, for example, a measuring apparatus that measures at least one of the position, quality, state, and characteristics of the mark. The measuring apparatus 100 can include, for example, a substrate stage WS that holds the substrate 73, an imaging unit 50 that images the mark, a control unit CU, and an interface UI. Here, the substrate 73 is, for example, a substrate used to manufacture a device or an article such as a semiconductor element or a display element, and specifically, a wafer, a glass substrate, or other substrate to be processed.

[0011] The substrate stage WS can hold the substrate 73 via a substrate chuck (not shown). The substrate stage WS is driven by a substrate driving mechanism (not shown). The substrate driving mechanism includes a linear motor and the like, and moves the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction, and rotation directions about each axis as a rotation axis, thereby moving the substrate 73 held by the substrate stage WS. The position of the substrate stage WS is monitored by, for example, a six-axis laser interferometer IF, and the substrate stage WS is driven to a target position under the control of a control unit CU (processor).

[0012] The control unit CU is composed of, for example, a computer (information processing device) including a CPU and a memory, and controls each unit of the measurement device 100 in accordance with a program stored or loaded in the memory. The operation of the measurement device 100 can be characterized by the program. The control unit CU can calculate the position of the measurement mark 72 by processing the result of imaging by the imaging unit 50, i.e., the image of the measurement mark 72 formed on the substrate 73. The control unit CU can control the operation of the measurement device 100 to execute a measurement method for measuring the substrate. The measurement method can include an imaging step of imaging a plurality of marks provided on the substrate, and a processing step of processing the images of the plurality of marks imaged in the imaging step. The processing step can include a step of acquiring information indicating the state of the substrate by processing a plurality of evaluation values ​​obtained from each of the images of the plurality of marks imaged in the imaging step while weighting the evaluation values.

[0013] The interface UI can include a display device, an input device, etc. Through the interface UI, the user can specify the position of a shot area to be measured or a measurement mark within a shot area for multiple shot areas on the substrate 73.

[0014] The optical system of the imaging unit 50 will be described with reference to FIG. 1(b). The imaging unit 50 may be called an alignment scope. The imaging unit 50 may include an illumination optical system that illuminates the substrate 73 using light from a light source 61, and an imaging optical system that forms an image of a measurement mark 72 on the substrate 73 on an imaging element 75. The light from the light source 61 is guided to an illumination aperture stop 64 via lenses 62 and 63. The light that has passed through the illumination aperture stop 64 is guided to a polarizing beam splitter 68 via a lens 65, a mirror 66, and a lens 67. The P-polarized light that has passed through the beam splitting surface of the polarizing beam splitter 68 passes through an aperture stop 69, and is then converted to circularly polarized light by a λ / 4 plate 70, and Koehler-illuminates the measurement mark 72 formed on the substrate 73 via an objective lens 71.

[0015] The light that has been Koehler illuminated and is reflected, diffracted, and scattered by measurement mark 72 passes through objective lens 71 and λ / 4 plate 70, and is guided to aperture stop 69. Here, the polarization state of the light from measurement mark 72 becomes circularly polarized in the opposite direction to the circularly polarized light that Koehler illuminates measurement mark 72, and is converted from circularly polarized light to S-polarized light by passing through λ / 4 plate 70. After passing through aperture stop 69, this S-polarized light is reflected by the beam splitting surface of polarizing beam splitter 68, and is guided to image sensor 75 via lens 74.

[0016] The illumination optical system may be provided with a light amount adjustment unit (not shown) and / or a wavelength adjustment unit (not shown). For example, a plurality of ND filters having different transmittances for the light from the light source 61 may be arranged in a switchable state, and the light amount adjustment unit may control the switching of the ND filters, thereby adjusting the intensity of the light illuminating the substrate 73. In addition, a plurality of wavelength filters having different wavelength characteristics of transmitted light for the light from the light source 61 may be arranged in a switchable state, and the wavelength adjustment unit may control the switching of the wavelength filters, thereby adjusting the wavelength of the light illuminating the substrate 73. Furthermore, the wavelength adjustment unit may include a wavelength variable element and a driving mechanism for driving the wavelength variable element. The driving mechanism may include a linear motor or the like, and may adjust the wavelength of the light illuminating the measurement mark 72 by driving the wavelength variable element along a predetermined direction.

[0017] The control unit CU described above acquires the position of the measurement mark 72 based on position information of the substrate stage WS obtained by the laser interferometer IF and a signal waveform obtained by detecting an image of the measurement mark 72. The intensity of this signal waveform can be adjusted by, for example, a light amount adjustment unit (ND filter) provided in the illumination optical system of the imaging unit 50, output control of the light source 61, and control of the accumulation time of the imaging element 75.

[0018] In the imaging optical system of the imaging unit 50, a detection aperture stop may be configured by arranging a plurality of lenses between the polarizing beam splitter 68 and the imaging element 75. Also, the illumination aperture stop 64 and the detection aperture stop may each be provided with a plurality of aperture stops capable of setting different numerical apertures for the illumination optical system and the imaging optical system, respectively, and these plurality of aperture stops may be made switchable. This makes it possible to adjust the σ value, which is a coefficient representing the ratio between the numerical aperture of the illumination system and the numerical aperture of the imaging system. Also, as a method for detecting light from the measurement mark 72, for example, dark field detection may be used in which the aperture diameter of the illumination aperture stop 64 or the detection stop is controlled to block the zeroth order diffracted light from the measurement mark 72 and detect only high order diffracted light or scattered light.

[0019] Hereinafter, a measurement method will be described in which at least two marks on a substrate 73 are simultaneously captured using the measurement device 100 and the imaging unit 50 described with reference to FIG. 1(a) and FIG. 1(b), and the substrate 73 is measured based on the image obtained thereby. FIG. 2(a) and FIG. 2(b) are diagrams showing a plurality of shot areas defined on the substrate 73. Measurement of the measurement marks is performed for the measurement marks provided in each sample area. The sample area means a selected shot area, and the shot area may include an area where a device pattern is formed and a scribe line in the vicinity of the area. The selection of the sample area shown in FIG. 2(a) and FIG. 2(b) is an example, and the number of sample areas and the layout of the designated sample areas may be changed depending on the required position measurement accuracy of the substrate.

[0020] 3(a) is a diagram showing an example of a measurement mark 72 provided in a shot area of ​​a substrate 73. Normally, position information of the measurement mark 72 in the X direction and the Y direction is acquired, but for simplicity of explanation, a diagram showing only an X mark for measuring the position in the X direction will be used for explanation.

[0021] The measurement marks 72 provided in the shot area or the sample area may include a mark 72A consisting of mark patterns A11 to A14 and a mark 72B consisting of mark patterns A21 to A24. The marks 72A and 72B are line-and-space marks, and may have a configuration in which line portions of lengths L1 and L2 and space portions of lengths S1 and S2 are periodically repeated as shown in FIG. 3(a). In the marks 72A and 72B, at least one of the line portions and space portions may have a different length. In addition to the lengths of the line portions and space portions, at least one of the mark designs, the number of mark patterns, and the positions in the Z direction formed on the substrate may be different.

[0022] FIG. 3(a) illustrates a measurement area 75W of the imaging unit 50. The measurement area 75W may be understood as the field of view of the imaging unit 50 or the imaging area (effective pixel area) of the imaging element 75. The substrate 73 may be aligned with respect to the imaging unit 50 so that at least two marks 72A and 72B in the shot area are included in the measurement area 75W (field of view). This allows at least two marks 72A and 72B to be simultaneously imaged by the imaging unit 50 (imaging element 75). In one example, rough measurement is performed on the measurement mark 72, and based on the result of the rough measurement, the control unit CU may set processing areas corresponding to at least two marks 72A and 72B, respectively. For example, processing areas 75WA and 75WB are set for the marks 72A and 72B, respectively, and the control unit CU processes the images of the processing areas 75WA and 75WB, thereby detecting position information for each of the marks 72A and 72B.

[0023] FIG. 3B is a diagram illustrating the result of imaging the mark 72A with the imaging element 75 and photoelectrically converting the signal intensity in the X direction in the processing area 75WA. S72A is signal intensity information including peak signals PA11-PA14 corresponding to the mark patterns A11-A14. Each peak signal may include two peaks formed by one mark pattern. Based on the signal intensity information S72A, the control unit CU may calculate the position of the mark 72A relative to the reference position of the imaging element 75 as a measurement value M1A. The same is true for the mark 72B, and a measurement value M2AB of the mark 72B may be calculated. The measurement value M1A is not limited to a measurement value relative to the reference position of the imaging element 75, and may be, for example, a measurement value relative to a measurement template set in advance or a design value.

[0024] Next, a sequence of the measurement process (measurement method) in the first embodiment will be described with reference to Fig. 4. The measurement process is performed by the control unit CU comprehensively controlling each part of the measurement device 100.

[0025] When the measurement process is started, first, a process of aligning the relative positions of the substrate 73 and the imaging unit 50 may be executed under the control of the control unit CU. In S301, the substrate 73 is transported into the measurement area of ​​the imaging unit 50. In S302, pre-alignment of the substrate 73 is performed so that the arrangement direction of the multiple shot areas of the substrate 73 in the X direction coincides with the X direction of the measuring apparatus 100.

[0026] S303 is an imaging step in which a plurality of marks provided on the substrate 73 are imaged by the imaging unit 50. Specifically, in S303, the control unit CU causes the imaging unit 50 (image sensor 75) to image at least two marks 72A and 72B in the sample area on the substrate 73. In S304, the control unit CU detects position information (evaluation value) for each of the marks 72A and 72B by processing the images (processing areas 75WA and 75WB) of the marks 72A and 72B imaged in S303. In S305, the control unit CU judges whether S303 and S304 have been executed for all the sample areas set in advance, and proceeds to S306 if the execution is completed, and returns to S303 if there is an unexecuted sample area.

[0027] In S306, the control unit CU processes the position information (evaluation value) of the marks 72A, 72B of each sample area acquired in S304 while giving a predetermined weight to the position information. In this way, the control unit CU acquires weighted position information of the measurement marks 72 including the marks 72A, 72B for each sample area. The weighted position information of the measurement marks 72 of each of the multiple sample areas can be understood as an example of information indicating the state of the substrate 73. The method of determining and setting the weight will be described in detail later.

[0028] S307 is a process step for acquiring information indicating the state of the substrate 73 by processing a plurality of evaluation values ​​obtained from each of the images of the marks 72A and 72B captured for each sample area in S303 while weighting the evaluation values. Specifically, in S307, the control unit CU acquires weighted position information by processing a plurality of evaluation values ​​obtained from each of the images of the marks 72A and 72B for each sample area on the substrate 73 while weighting the evaluation values. The control unit CU also calculates the position of the substrate 73 by statistically processing the weighted position information of each of the sample areas. This ends the measurement sequence of the substrate 73. As a specific example of statistical processing, there can be mentioned an example of acquiring global alignment information, that is, information indicating the arrangement of a plurality of shot areas of the substrate 73, based on the weighted position information of each measurement mark 72 of the plurality of sample areas. The information indicating the position of the substrate 73 and the global alignment information can be understood as another example of information indicating the state of the substrate 73.

[0029] Up to this point, an example has been described in which the measurement mark 72 of each sample area (each shot area) has two marks 72A and 72B, but the measurement mark 72 of each sample area (each shot area) may have three or more marks. FIG. 5 shows an example in which the measurement mark 172 of each sample area (each shot area) has four marks 172A to D, which are accommodated in the measurement area 175W of the imaging unit 50. The measurement mark 172 is composed of four marks 172A to D, which are different from each other in at least one of the line width, number, and pitch of the pattern. The measurement marks 172A to D each have an X pattern (a pattern whose short side direction is the X direction and whose long side direction is the Y direction) for measuring the position in the X direction, and a Y pattern (a pattern whose short side direction is the Y direction and whose long side direction is the X direction) for measuring the position in the Y direction. Then, in the same manner as in FIG. 3(a), position information in the X direction and the Y direction is obtained for each mark. In this way, the positions of the four marks 172A to 172D in the X and Y directions may be measured.

[0030] The method of determining the weights described in S306 in FIG. 4 will be described below. FIG. 6 is a diagram showing a sequence of determining weights in this embodiment. This process is preferably performed prior to the measurement process shown in FIG. 4. The substrate used in this process may be a weighting substrate prepared for weight determination, or the substrate used in the process of FIG. 4. When the substrate used in the process of FIG. 4 is used in this process, the substrate may also be understood as a weighting substrate. The weight determination sequence is executed by the control unit CU. S501 to S505 shown in FIG. 6 are the same as S301 to S305 shown in FIG. 4, and therefore will not be described here.

[0031] In S506, the calculation unit CU calculates the position of the substrate 73 based on the position information of the marks 72A and 72B obtained in S504 for all the preset sample regions. At this time, the position of the substrate 73 may be calculated by performing statistical processing using the position information obtained for one of the at least two marks 72A and 72B. Alternatively, the same weighting may be applied to all of the at least two marks 72A and 72B. Alternatively, a weighting set as a default or a weighting used in a past measurement may be set.

[0032] In S507, a pattern is formed on the substrate 73 based on the position of the substrate 73 calculated in S506. This pattern may include a device pattern and a measurement mark. S507 may be executed by a lithography apparatus incorporating the imaging unit 50. This execution may be controlled by the control unit CU.

[0033] In S508, the position of the pattern formed on the substrate 73 in S507 may be measured. Alternatively, in S508, the relative position (overlay) between the pattern formed on the substrate 73 in S507 and the pattern of the layer below it may be measured. Alternatively, in S508, the pattern formed on the substrate 73 in S507 may be imaged by the imaging unit 50 to acquire characteristic information including signal intensity information.

[0034] S509 is a determination step for determining weights based on the overlay errors of the multiple shot areas of the weight determination substrate. More specifically, in S509, the control unit CU determines the weights to be assigned to the at least two marks 72A and 72B based on the positions of the patterns acquired in S508. This completes the weight determination sequence.

[0035] 7(a) is a diagram illustrating a cross-sectional structure of the measurement mark 72 and the overlay measurement mark on the substrate 73. An overlay measurement mark OM1 may be formed on the Nth layer of the substrate 73 together with the above-mentioned measurement mark 72. For example, in S507 of FIG. 6, an overlay measurement mark OM2 is formed on the N+1th layer of the substrate 73 based on the position measurement result of the measurement mark 72.

[0036] 6, when acquiring position information of the pattern, for example, the position of the overlay measurement mark OM2 on the substrate 73 may be measured. Alternatively, the relative positions of the overlay measurement marks OM1 and OM2 may be measured. By performing the above measurement for multiple shot areas on the substrate 73, for example, the positions of the pattern according to the positions of the multiple shot areas on the substrate 73 can be acquired.

[0037] In S509 of FIG. 6, one method of calculating the weights is to calculate the weights based on the overlay error acquired in S508. FIG. 7(b) is a table showing the relationship between the types of at least two marks 72A, 72B, 73C, etc., the position correction coefficient group of the substrate 73 based on the measurement values ​​of the at least two marks 72A, 72B, 73C, etc., and the overlay error of the formed pattern. For example, the position correction coefficient group G72A of the substrate can be a result obtained by performing a global alignment calculation based on the position measurement result of the mark 72A. Specific examples of the position correction coefficient group include the positional deviation (shift), magnification error, and rotation error of the substrate. In addition, the overlay error OLA can be acquired by forming a pattern on the substrate based on the position correction coefficient group G72A of the substrate and evaluating it with an overlay measurement device or the like. For example, the overlay error of the substrate is the average value or variation of the overlay measurement values ​​at multiple positions on the substrate.

[0038] The overlay error OLB when the substrate is aligned based on the position measurement value of mark 72B can be estimated from the following formula based on the substrate position correction coefficient groups G72A, G72B and the overlay error OLA.

[0039] OL1B=F(OLA,G72A,G72B) (Equation 1) Specifically, for each position on the substrate where the overlay error is measured, the difference in position correction by the substrate position correction coefficient groups G72A and G72B can be calculated. Then, the overlay error OLB can be calculated by performing a calculation process to add the difference in position correction to the overlay error OLA.

[0040] In this embodiment, the position of the substrate is measured based on an image obtained by simultaneously capturing images of at least two marks 72A, 72B in the shot area using the imaging unit 50. Then, a group of position correction coefficients for the substrate is calculated based on the measurement values ​​acquired for each of the at least two marks 72A, 72B. Therefore, a group of position correction coefficients for the substrate corresponding to each of the at least two marks 72A, 72B is calculated, and it is possible to estimate an overlay measurement value corresponding to each of the at least two marks 72A, 72B based on position information of the pattern formed on the substrate.

[0041] The weights can be determined so that the overlay error obtained based on the evaluation value obtained from each of the images obtained by imaging the multiple marks on the weight determination substrate, i.e., the overlay error of each of the multiple shot areas, meets the target value. More preferably, the weights can be determined so that the overlay error obtained based on the evaluation value obtained from each of the images obtained by imaging the multiple marks on the weight determination substrate, i.e., the overlay error of each of the multiple shot areas, is minimized. In the following, a specific method of weight determination will be described with reference to FIG. 7(c). FIG. 7(c) shows a position correction coefficient group and an overlay error for at least two marks 72A, 72B, etc., for two weight determination substrates a and b. For example, the position correction coefficient group of the mark 72A on the substrate a is G72Aa, and the overlay error is OLAa, and the position correction coefficient group of the mark 72A on the substrate b is G72Ab, and the overlay error is OLAb. The overlay errors OLB to OLX are values ​​estimated for the marks 72B to 72X, respectively, and are calculated based on the measured overlay error OLA and the position correction coefficient group G72A, as described above.

[0042] Here, when the weights given to the marks 72A and 72B are defined as WA and WB, respectively, the overlay errors OLa and OLb of the substrate a are expressed by the following equations.

[0043] OLa=OLAa×WA+OLBa×WB (Formula 2) OLb=OLAb×WA+OLBb×WB (Formula 3) Furthermore, when two marks 72A and 72B are used, the following relationship holds between the respective weights WA and WB.

[0044] WA+WB=1 (Equation 4) Then, by substituting (Equation 4) into (Equation 2) and (Equation 3) respectively and summarizing them, we can express them as the following (Equation 5) and (Equation 6).

[0045] OLa=(OLBa-OLAa)×WB+OLAa (Formula 5) OLb=(OLBb-OLAb)×WB+OLAb (Formula 6) FIG. 7(d) is a diagram showing the weight WB given to the mark 72B on the horizontal axis and the overlay errors OLa and OLb on the vertical axis. As shown in (Equation 5) and (Equation 6), the overlay errors OLa and OLb are functions of WB, so OLa can be expressed as F51 and OLb as F61 depending on the magnitude relationship between OLBa and OLAa. In this case, it can be seen that when the weight WB is equal to W1, both the overlay errors OLa and OLb become small. Therefore, the weights of the marks 72A and 72B can be set to 1-W1 and W1, respectively. In the same manner, the weights to be given to two different marks can be calculated to determine the weights. This allows the weight that minimizes the overlay error to be determined.

[0046] Also, as shown in FIG. 7(e), when the overlay errors OLa and OLb are F52 and F62, respectively, it can be seen that both the overlay errors OLa and OLb become smaller by setting the weight WB to zero. This means that the measurement is performed without using the mark 72B. For example, it is possible to set the weight=1 to one of the at least two marks, and set the weight=0 to the other marks. Furthermore, the weights added to the at least two marks are not limited to positive numbers, and may be set to negative numbers within a range that satisfies (Equation 4).

[0047] As another example of a method for determining the weight, the weight may be determined based on the amount of difference between the pattern position information acquired in S508 of FIG. 6 and the target position information (for example, a design value (target value)) so that the amount of difference is minimized. FIG. 8(a) is a diagram showing the relationship between the pattern position information P72A-P72X and the design values ​​D72A-D72X for at least two marks 72A-72X. The differences Δ72A-Δ72X are values ​​calculated by calculating the difference between the pattern position information and the design value (target value) for each of the marks 72A-72X. Note that the pattern position information and the measurement value are not limited to one each. For example, the average value or the variation may be calculated for the difference between the position information of a plurality of patterns measured for a plurality of shot areas on the substrate and each of the design values. Then, the weight may be determined so that the differences Δ72A-Δ72X are minimized. The calculation of the weight may be performed in the same manner as that described with reference to FIG. 7(c)-FIG. 7(e).

[0048] Furthermore, as another method, the weights may be determined based on the signal intensity information of the pattern acquired in S508 so that the intensity of the detection signal from the measurement mark 72 or the signal quality of the detection signal, which is one of the evaluation values, such as the contrast, is maximized. Also, the weights may be determined so that the asymmetry of the detection signal, which is one of the evaluation values ​​(another example of signal quality), is minimized. Furthermore, the weights may be determined so that the variation in the intensity of the detection signal or the variation in the evaluation index value in multiple shot areas on the substrate 73 is minimized.

[0049] Here, the evaluation index value of the detection signal is an index value indicating the quality of the detection signal from the pattern to be measured. The evaluation index value of the detection signal will be described below with reference to FIG. 8(b). FIG. 8(b) is a diagram showing an example of the intensity information (signal intensity) of the detection signal from the pattern, where the horizontal axis indicates the position and the vertical axis indicates the signal intensity. Due to the difference in the structure on the substrate between the patterned part and the non-patterned part, the signal intensity differs depending on the respective positions. One of the evaluation index values ​​is a value that quantifies the asymmetry of the detection signal. For example, in FIG. 8(b), the maximum value of the signal intensity in the left section of the detection signal is TL, the minimum value is BL, the maximum value of the signal intensity in the right section is TR, the minimum value is BR, and the signal intensity in the center of the detection signal is ML, MR. Then, as shown in the following (Equation 7), the asymmetry ES between the left section and the right section in the detection signal may be obtained as characteristic information.

[0050] ES=(TL−BL) / (TL+BL)−(TR−BR) / (TR+BR) (Equation 7) The method of calculating the asymmetry is not limited to (Formula 7), and for example, the center position of the detection signal may be defined, and the asymmetry of the detection signal may be defined based on the signal strength in a predetermined position range in each of the left and right sections of the center position. In addition, as another evaluation value, for example, the contrast of the measurement pattern may be evaluated as shown in the following (Formula 8). EC={(TL−BL) / (TL+BL)+(TR−BR) / (TR+BR)} / 2 (Equation 8) 4, the weights applied to the at least two marks do not need to be the same for all sample areas on the substrate 73. For example, the weights may be determined according to the positions of the sample areas on the substrate 73. The weights do not need to be the same for the measurement directions on the substrate 73 either, and for example, the weights may be determined according to the measurements in the X and Y directions.

[0051] Next, the correction of optical aberration in this embodiment will be described. When at least two marks in a shot area are detected simultaneously by the imaging unit 50, if the optical aberration (especially distortion) is large in the field of view of the imaging unit 50, an error occurs in the measurement values ​​of the at least two marks. This can be a factor in reducing the measurement accuracy of the substrate.

[0052] Therefore, it is advisable to obtain the amount of error caused by the optical aberration in the imaging unit 50 in advance and create a correction amount (correction table) according to the position in the field of view. As a method for creating the correction table, the same mark may be used to obtain the measurement value according to the position in the field of view. Alternatively, a grid pattern may be used to obtain the measurement value according to the position in the field of view.

[0053] 4, it is preferable to correct the measurement values ​​of at least two marks in the shot area using the created correction table to obtain position information of each mark. This makes it possible to reduce errors caused by optical aberrations when measuring the positions of at least two marks in the shot area. <Second embodiment> As the second embodiment, a measuring device (mark monitor) that measures the characteristics of a measurement target (e.g., a mark) will be described. First, the function of the measuring device (mark monitor) will be described. In order to align the substrate 73 with high accuracy and form a device pattern at a desired position, it is important to detect the presence or absence of changes in the characteristic information of the substrate (shape, structure, physical property value, etc.). If the substrate characteristics change beyond expectation, the measurement value of the mark will change, and the alignment accuracy of the substrate and the overlay accuracy of the pattern on the substrate may deteriorate. Therefore, by measuring (monitoring) the characteristics of the mark and detecting the presence or absence of an abnormality in the substrate, it becomes possible to take measures such as issuing a warning or an error notification. The mark may be, for example, an alignment mark or an overlay measurement mark, or a device pattern.

[0054] The measurement method in the second embodiment will be described below with reference to FIG. 9. The second embodiment differs from the first embodiment in that characteristic information of the mark is acquired and comparison and determination are performed, and so this part will be described in detail below. The other parts have the same configuration as the first embodiment, so their description will be omitted here. Items not mentioned here may follow the first embodiment.

[0055] 9 is a diagram showing a measurement sequence in the second embodiment. After the measurement process is started, in steps S601 to S603, the substrate 73 is aligned so that at least two marks on the substrate are within the field of view of the imaging unit 50, and the at least two marks are imaged. Then, in step S604, the control unit CU acquires characteristic information of the at least two marks based on the images captured in step S603. The characteristic information of the marks may include, for example, at least one of the shape, structure, and physical property values ​​of the substrate. The characteristic information of the marks may include, for example, an evaluation value (asymmetry, contrast) of the detection signal given by (Equation 7).

[0056] In S605, the control unit CU causes the imaging unit 50 to capture at least two marks for all sample areas previously set on the substrate 73. In S606, the control unit CU assigns a predetermined weight to the characteristic information of the at least two marks acquired in each sample area in S604. The method of calculating and setting the weight will be described in detail later. In S607, the control unit CU calculates the characteristic information or position information of the substrate based on the result of S606. The specific calculation method will be described in detail later.

[0057] In S608, the calculation unit CU calculates the difference between the reference data and the physical property information or position information of the substrate calculated in S607. Then, the control unit CU judges, for example, whether or not a tolerance (target value) can be achieved. As the reference data, the property information or position information of multiple substrates calculated in advance may be used. Also, as the tolerance, the amount of variation in multiple substrates calculated in advance, the shape of the substrate required to achieve the overlay target, etc. may be set.

[0058] A method for calculating and setting weights for at least two marks will be described below with reference to Fig. 10 and Fig. 11. Fig. 10 is a diagram showing a sequence for determining weights in this embodiment. This process is preferably performed prior to the measurement process shown in Fig. 9.

[0059] In steps S701 to S703, the weighting substrate is positioned so that at least two marks on the weighting substrate are within the field of view of the imaging unit 50, and the at least two marks are imaged. In step S704, the control unit CU acquires position information or characteristic information of the at least two marks based on the image captured in step S703. In step S705, the control unit CU causes the imaging unit 50 to capture at least two marks for all sample regions previously set on the weighting substrate.

[0060] In S706, the control unit CU determines the characteristics or shape of the weighting substrate based on the characteristic information or position information of the marks acquired in S704 for the multiple sample regions on the weighting substrate. For example, the substrate characteristics may be determined by determining the average value of the multiple sample regions for asymmetry and contrast, which are evaluation values ​​of the detection signal. Also, the substrate characteristics may be determined by determining the variation of the multiple sample regions for asymmetry and contrast, which are evaluation values ​​of the detection signal. Furthermore, the distortion shape of the substrate may be determined based on the measurement values ​​of the marks formed in the multiple sample regions.

[0061] In S707, the control unit CU determines the weights to be assigned to the at least two marks, based on the characteristics or shape of the substrate acquired in S706, thereby completing the weight determination sequence.

[0062] The following describes a method for calculating the weights in the mark monitor of the second embodiment. In order to accurately detect changes in the characteristics of the substrate, it is preferable that the evaluation value of the detection signal of the mark changes sensitively with respect to changes in the characteristics of the substrate.

[0063] 11(a) is a table showing the relationship between at least two types of marks and the characteristics and shapes of the substrate obtained in S706. For example, the substrate characteristics S272A are values ​​obtained based on the characteristic information of the marks 272A in multiple sample areas on the substrate. Also, the substrate shape P272A is a value obtained based on the position information of the marks 272A in multiple sample areas on the substrate.

[0064] 11B is a diagram showing an example of the configuration of the measurement mark 272 on the substrate, and the measurement mark 272 has at least two marks 272A and 272B. Compared to the mark 272A, the mark 272B is a mark that is segmented in the non-measurement direction of the mark pattern. The at least two marks 272A and 272B are different from each other in at least one of the mark pattern line width, pitch, whether or not segmentation is performed, and the layer on the substrate on which the marks are formed. The measurement mark 272 on the substrate is aligned with the measurement region 75W of the imaging unit 50 on the substrate.

[0065] As one method of calculating the weights, the weights to be added to at least two marks may be determined so as to maximize the asymmetry or contrast variation of the detection signals in a plurality of sample regions on the substrate, or the weights to be added to at least two marks may be determined so as to maximize the distortion shape of the substrate.

[0066] As described above, in the second embodiment, characteristic information or position information of at least two marks is measured based on an image of the at least two marks. Then, the characteristic or position of the substrate is calculated according to the weighting of the characteristic or position information of each of the at least two marks. This makes it possible to detect the measurement target with high accuracy.

[0067] An information processing method for processing information acquired using the above-mentioned measuring device will be described as an example. The information processing method is suitable for measuring a measurement target (such as an alignment mark, an overlay measurement mark, or a device pattern) on a substrate. The information processing method includes an imaging step of imaging at least two marks formed on the substrate using the measuring device 100, and a measurement step of measuring signal intensity information or position information for each of the at least two marks. The information processing method may also include a calculation step of calculating the characteristics or position of the substrate according to a predetermined weighting for each of the signal intensity information or position information of the multiple marks. The information processing method may also include a determination step of determining a weighting to be applied to each of the signal intensity information or position information of the at least two marks. The information processing method in this embodiment can detect the measurement target with higher accuracy than in the past. <Third embodiment> The above-mentioned measurement apparatus 100 may be incorporated into a lithography apparatus. Such a lithography apparatus includes the measurement apparatus 100 and a system that aligns a substrate and an original based on a result obtained by the measurement apparatus 100 and transfers a pattern of the original to the substrate. The lithography apparatus may be, for example, an exposure apparatus or an imprint apparatus. The above-mentioned measurement method may be employed in a pattern formation method for forming a pattern on a substrate. Such a pattern formation method may include a measurement step of measuring a substrate by the above-mentioned measurement method, and a transfer step of transferring a pattern to a substrate based on a result obtained in the measurement step. Furthermore, the pattern formation method may be employed in an article manufacturing method. Such an article manufacturing method may include a pattern formation step of forming a pattern on a substrate according to the pattern formation method, and a processing step of processing the substrate on which the pattern has been formed in the pattern formation step to obtain an article.

[0068] 12 is a schematic diagram showing the configuration of the exposure apparatus EXA. The exposure apparatus EXA is a lithography apparatus used in a lithography process, which is a manufacturing process for devices such as semiconductor elements and liquid crystal display elements, and forms a pattern on a substrate 83. The exposure apparatus EXA exposes the substrate 83 through a reticle 31, which is an original, and transfers the pattern of the reticle 31 onto the substrate 83. In this embodiment, the exposure apparatus EXA employs a step-and-scan method, but it is also possible to employ a step-and-repeat method or other exposure methods.

[0069] As shown in FIG. 12, the exposure apparatus EXA has an illumination optical system 801, a reticle stage RS that holds a reticle 31, a projection optical system 32, a substrate stage WS that holds a substrate 83, a position measurement device 550, and a control unit 1200.

[0070] The illumination optical system 801 is an optical system that illuminates an illuminated surface using light from a light source unit 800. The light source unit 800 includes, for example, a laser. The laser includes an ArF excimer laser with a wavelength of about 193 nm, a KrF excimer laser with a wavelength of about 248 nm, and the like, but the type of light source is not limited to an excimer laser. For example, the light source unit 800 may use, as a light source, an F2 laser with a wavelength of about 157 nm or an EUV (Extreme ultraviolet) with a wavelength of 20 nm or less.

[0071] In this embodiment, the illumination optical system 801 shapes the light from the light source unit 800 into a slit light having a predetermined shape optimal for exposure, and illuminates the reticle 31. The illumination optical system 801 has a function of uniformly illuminating the reticle 31 and a function of polarized illumination. The illumination optical system 801 includes, for example, a lens, a mirror, an optical integrator, an aperture, etc., and is configured by arranging a condenser lens, a fly's-eye lens, an aperture aperture, a condenser lens, a slit, and an imaging optical system in this order.

[0072] The reticle 31 is made of, for example, quartz. On the reticle 31, a pattern (circuit pattern) to be transferred onto the substrate 83 is formed.

[0073] The reticle stage RS holds the reticle 31 via a reticle chuck (not shown) and is connected to a reticle drive mechanism (not shown). The reticle drive mechanism includes a linear motor and the like, and is capable of moving the reticle stage RS in the X-axis, Y-axis, Z-axis directions and in the rotational directions about each axis, thereby moving the reticle 31 held by the reticle stage RS. The position of the reticle 31 is measured by a reticle position measurement unit (not shown) of an oblique light incidence system, and the reticle is positioned at a predetermined position via the reticle stage RS.

[0074] The projection optical system 32 has a function of forming an image of light from an object surface on an image surface. In this embodiment, the projection optical system 32 projects light (diffracted light) that has passed through the pattern of the reticle 31 onto the substrate 83, and forms an image of the pattern of the reticle 31 on the substrate. The projection optical system 32 may be an optical system made of multiple lens elements, an optical system including multiple lens elements and at least one concave mirror (catedioptric optical system), or an optical system including multiple lens elements and at least one diffractive optical element such as a kinoform.

[0075] A photoresist is applied to the substrate 83. The substrate 83 is an object to which the pattern of the reticle 31 is transferred, and includes a wafer, a liquid crystal substrate, other substrates to be processed, and the like.

[0076] The substrate stage WS holds the substrate 83 via a substrate chuck (not shown) and is connected to a substrate driving mechanism (not shown). The substrate driving mechanism includes a linear motor and the like, and is capable of moving the substrate stage WS in the X-axis direction, the Y-axis direction, the Z-axis direction, and the rotational direction of each axis, thereby moving the substrate 83 held by the substrate stage WS. In addition, a reference plate 39 is provided on the substrate stage WS.

[0077] The positions of the reticle stage RS and the substrate stage WS are monitored by, for example, a six-axis laser interferometer 91, and under the control of the control unit 1200, the reticle stage RS and the substrate stage WS are driven at a constant speed ratio.

[0078] The control unit 1200 is composed of a computer (information processing device) including a CPU, memory, etc., and generally controls each unit of the exposure apparatus EXA according to a program stored in the storage unit, for example, to operate the exposure apparatus EXA. The control unit 1200 controls an exposure process in which the substrate 83 is exposed via the reticle 31 and the pattern of the reticle 31 is transferred to the substrate 83. In this embodiment, the control unit 1200 also controls the measurement process in the position measurement device 550 and the correction process (arithmetic process) of the measurement value obtained by the position measurement device 550. In this way, the control unit 1200 also functions as a part of the position measurement device 550.

[0079] In the exposure apparatus EXA, light (diffracted light) that has passed through the reticle 31 is projected onto the substrate 83 via the projection optical system 32. The reticle 31 and the substrate 83 are disposed in an optically conjugate relationship. The pattern of the reticle 31 is transferred onto the substrate 83 by scanning the reticle 31 and the substrate 83 at a speed ratio that is the reduction magnification ratio of the projection optical system 32.

[0080] The position measuring device 550 is a measuring device that measures the position of an object. The measuring device 100 described above can be employed as the position measuring device 550. In this embodiment, the position measuring device 550 measures the positions of a plurality of marks 82, such as alignment marks, provided on a substrate 83. Note that the position measuring device 550 has the same configuration as the imaging unit 50 shown in FIG. 1(b), and therefore a description thereof will be omitted here.

[0081] 13, a description will be given of a sequence of an exposure process in which the substrate 83 is exposed through the reticle 31 and the pattern of the reticle 31 is transferred onto the substrate 83. As described above, the exposure process is performed by the control unit 1200 comprehensively controlling each unit of the exposure apparatus EXA.

[0082] In S101, the substrate 83 is carried into the exposure apparatus EXA. In S102, the surface (height) of the substrate 83 is detected by a shape measuring device (not shown) to measure the surface shape of the entire area of ​​the substrate 83.

[0083] In S103, calibration is performed. Specifically, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the position measurement device 550 based on the design coordinate position of the reference mark provided on the reference plate 39 in the stage coordinate system. Next, the positional deviation of the reference mark with respect to the optical axis of the position measurement device 550 is measured, and the stage coordinate system is reset so that the origin of the stage coordinate system coincides with the optical axis of the position measurement device 550 based on the positional deviation. Next, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the exposure light based on the design positional relationship between the optical axis of the position measurement device 550 and the optical axis of the projection optical system 32. Then, the TTL (through-the-lens) measurement system measures the positional deviation of the reference mark with respect to the optical axis of the exposure light via the projection optical system 32.

[0084] In S104, based on the result of the calibration in S103, a baseline is determined between the optical axis of the position measurement device 550 and the optical axis of the projection optical system 32. In S105, the position measurement device 550 measures the position of the mark 82 provided on the substrate 83.

[0085] In S106, global alignment is performed. Specifically, based on the measurement results in S105, the shift, magnification, and rotation are calculated for the arrangement of the shot areas of the substrate 83, and the regularity of the arrangement of the shot areas is obtained. Then, a correction coefficient is obtained from the regularity of the arrangement of the shot areas and the baseline, and the substrate 83 is aligned with the reticle 31 (exposure light) based on the correction coefficient.

[0086] In S107, the substrate 83 is exposed while scanning the reticle 31 and the substrate 83 in the scanning direction (Y direction). At this time, based on the surface shape of the substrate 83 measured by the shape measuring device, the substrate stage WS is driven in the Z direction and the tilt direction to sequentially align the surface of the substrate 83 with the imaging plane of the projection optical system 32.

[0087] In S108, it is determined whether exposure of all shot areas of substrate 83 is complete (i.e., whether there are any unexposed shot areas). If exposure of all shot areas of substrate 83 is not complete, the process proceeds to S107, and S107 and S108 are repeated until exposure of all shot areas is complete. On the other hand, if exposure of all shot areas of substrate 83 is complete, the process proceeds to S109, and substrate 83 is unloaded from exposure apparatus EXA.

[0088] In this embodiment, light from a plurality of different marks is captured, an imaging area is set for each of the different marks, and position information for each of the different marks is measured. Then, the position of the substrate is calculated according to weighting for each of the position information for each of the different marks. This allows the measurement target to be measured with high accuracy.

[0089] An article manufacturing method for manufacturing an article using the above-mentioned lithography apparatus will be described as an example. The article manufacturing method is suitable for manufacturing an article such as a device (semiconductor element, magnetic storage medium, liquid crystal display element, etc.). The manufacturing method includes a step of exposing a substrate coated with a photosensitive agent (forming a pattern on the substrate) using the exposure apparatus EXA, and a step of developing the exposed substrate (processing the substrate). The manufacturing method may also include other well-known steps (oxidation, film formation, deposition, doping, flattening, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method. The above-mentioned article manufacturing method may be performed using a lithography apparatus such as an imprint apparatus or a drawing apparatus.

[0090] The present disclosure includes the following. (Item 1) A method for measuring a substrate, comprising the steps of: an imaging step of imaging a plurality of marks provided on the substrate; a processing step of acquiring information indicating a state of the substrate by processing a plurality of evaluation values ​​obtained from each of the images of the plurality of marks captured in the imaging step while weighting the plurality of evaluation values; A measuring method comprising: (Item 2) The plurality of marks include at least two marks that are simultaneously imaged in the imaging step. 2. The measurement method according to item 1, (Item 3) In the processing step, different weights are assigned to the evaluation values ​​obtained from the images of the at least two marks. 3. The measurement method according to item 2, (Item 4) the substrate includes a first shot area and a second shot area; the plurality of marks include at least two marks arranged in the first shot area and at least two marks arranged in the second shot area; 4. The measurement method according to any one of items 1 to 3. (Item 5) The at least two marks arranged in the first shot area are simultaneously imaged in the imaging process, and the at least two marks arranged in the second shot area are simultaneously imaged in the imaging process. 5. The measurement method according to item 4, (Item 6) In the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the first shot area, and different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the second shot area. 6. The measurement method according to item 5, (Item 7) The at least two marks arranged in the first shot area are accommodated in a field of view of one imaging unit in the imaging process, and the at least two marks arranged in the second shot area are accommodated in the field of view in the imaging process. 5. The measurement method according to item 4, (Item 8) In the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the first shot area, and different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the second shot area. 8. The measurement method according to item 7, (Item 9) the substrate includes a plurality of shot areas; At least two marks are disposed in each of the plurality of shot areas as a part of the plurality of shot areas. 4. The measurement method according to any one of items 1 to 3. (Item 10) In the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks in each shot area. 10. The measurement method according to item 9, (Item 11) determining the weight based on an overlay error of each of a plurality of shot areas of a substrate for weight determination; 10. The measurement method according to item 9, (Item 12) In the determination step, the weights are determined so that the overlay errors of the respective shot areas, which are obtained based on evaluation values ​​obtained from images obtained by capturing images of the respective marks on the substrate for weight determination, satisfy target values. 12. The measuring method according to item 11, (Item 13) In the determination step, the weights are determined so as to minimize an overlay error in each of the plurality of shot areas, the overlay error being obtained based on an evaluation value obtained from each of images obtained by capturing an image of a plurality of marks on the weight determination substrate. 12. The measuring method according to item 11, (Item 14) In the determination step, the weight is determined based on a difference between position information as an evaluation value obtained from each of images obtained by capturing an image of a plurality of marks on the weight determination substrate and target position information. 12. The measuring method according to item 11, (Item 15) In the determination step, the weights are determined based on signal quality as an evaluation value obtained from each of images obtained by capturing images of a plurality of marks on the weight determination substrate. 12. The measuring method according to item 11, (Item 16) A pattern forming method for forming a pattern on a substrate, comprising the steps of: A measuring step of measuring a substrate by the measuring method according to any one of items 1 to 15; a transfer step of transferring a pattern onto a substrate based on the results obtained in the measurement step; A pattern forming method comprising the steps of: (Item 17) 1. A method of manufacturing an article, comprising: A pattern formation step of forming a pattern on a substrate according to the pattern formation method according to item 16; a processing step of processing the substrate on which the pattern is formed in the pattern forming step to obtain an article; A method for manufacturing an article, comprising: (Item 18) A measuring apparatus for measuring a substrate, comprising: an imaging unit that images a plurality of marks provided on the substrate; a processor that acquires information indicating a state of the substrate by processing a plurality of evaluation values ​​while weighting the evaluation values ​​obtained from each of the images of the plurality of marks captured by the imaging unit; and A measuring device comprising: (Item 19) 1. A lithographic apparatus comprising: Item 18. A measuring device according to item 18; a system for aligning a substrate and an original based on a result obtained by the measurement device and transferring a pattern of the original onto the substrate; 1. A lithographic apparatus comprising: (Item 20) 1. A method of manufacturing an article, comprising: A patterning step of forming a pattern on a substrate using the lithography apparatus according to item 19; a processing step of processing the substrate on which the pattern is formed in the pattern forming step to obtain an article; A method for manufacturing an article, comprising: (Item 21) A program for causing a computer to execute a process for evaluating a substrate, The program characterized in that the processing includes a step of obtaining information indicating the state of the substrate by processing a plurality of evaluation values ​​obtained from respective images of a plurality of marks provided on the substrate while assigning weights to the plurality of evaluation values. [Explanation of symbols]

[0091] 50: imaging unit, 72: measurement mark, 72A, 72B: marks, 73, 74: substrate, 75: imaging element, 100: measurement device, CU: control unit

Claims

1. A measurement method for measuring a substrate, comprising: an imaging step of imaging a plurality of marks provided on the substrate; a processing step of acquiring information indicating a state of the substrate by processing a plurality of evaluation values ​​obtained from each of the images of the plurality of marks captured in the imaging step while assigning weights to the plurality of evaluation values, A measuring method, wherein the plurality of marks include at least two marks that are simultaneously imaged in the imaging step.

2. In the processing step, different weights are assigned to the evaluation values ​​obtained from the images of the at least two marks.

2. The measurement method according to claim 1 .

3. the substrate includes a first shot area and a second shot area; the plurality of marks include at least two marks arranged in the first shot area and at least two marks arranged in the second shot area; 2. The measurement method according to claim 1 .

4. the at least two marks arranged in the first shot area are simultaneously imaged in the imaging step, and the at least two marks arranged in the second shot area are simultaneously imaged in the imaging step.

4. The measuring method according to claim 3.

5. in the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the first shot area, and different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the second shot area.

5. The measuring method according to claim 4.

6. the at least two marks arranged in the first shot area are accommodated in a field of view of one imaging unit in the imaging process, and the at least two marks arranged in the second shot area are accommodated in the field of view in the imaging process.

4. The measuring method according to claim 3.

7. in the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the first shot area, and different weights are assigned to evaluation values ​​obtained from the images of the at least two marks arranged in the second shot area.

7. The measuring method according to claim 6.

8. the substrate includes a plurality of shot areas; At least two marks are arranged in each of the plurality of shot areas as part of the plurality of shot areas.

2. The measurement method according to claim 1 .

9. In the processing step, different weights are assigned to evaluation values ​​obtained from the images of the at least two marks in each shot area.

9. The measuring method according to claim 8.

10. a determining step of determining the weight based on an overlay error of each of a plurality of shot areas of the substrate for weight determination; 9. The measuring method according to claim 8.

11. In the determination step, the weights are determined so that the overlay errors of the respective shot areas, which are obtained based on evaluation values ​​obtained from images obtained by capturing images of the plurality of marks on the substrate for weight determination, satisfy target values. The measurement method according to claim 10 .

12. In the determination step, the weights are determined so as to minimize an overlay error in each of the plurality of shot areas, the overlay error being obtained based on evaluation values ​​obtained from images obtained by capturing images of the plurality of marks on the substrate for weight determination. The measurement method according to claim 10 .

13. In the determination step, the weight is determined based on a difference between position information as an evaluation value obtained from each of images obtained by capturing an image of a plurality of marks on the substrate for weight determination and target position information. The measurement method according to claim 10 .

14. In the determination step, the weight is determined based on signal quality as an evaluation value obtained from each of images obtained by capturing images of the plurality of marks on the substrate for weight determination. The measurement method according to claim 10 .

15. A pattern forming method for forming a pattern on a substrate, comprising: a measuring step of measuring a substrate by the measuring method according to any one of claims 1 to 14; a transfer step of transferring a pattern onto a substrate based on the results obtained in the measurement step; A pattern forming method comprising the steps of:

16. 1. A method of manufacturing an article, comprising: a pattern forming step of forming a pattern on a substrate according to the pattern forming method of claim 15; a processing step of processing the substrate on which the pattern has been formed in the pattern forming step to obtain an article; A method for manufacturing an article, comprising:

17. A measurement device for measuring a substrate, an imaging unit that images a plurality of marks provided on the substrate; a processor that acquires information indicating a state of the substrate by processing a plurality of evaluation values ​​obtained from each of the images of the plurality of marks captured by the imaging unit while assigning weights to the plurality of evaluation values, The measuring device, wherein the plurality of marks include at least two marks that are simultaneously imaged by the imaging unit.

18. 1. A lithographic apparatus comprising: The measurement device according to claim 17; a system for aligning a substrate and an original based on the results obtained by the measurement device and transferring a pattern of the original onto the substrate; 1. A lithographic apparatus comprising:

19. 1. A method of manufacturing an article, comprising: a patterning step of forming a pattern on a substrate using the lithographic apparatus of claim 18; a processing step of processing the substrate on which the pattern has been formed in the pattern forming step to obtain an article; A method for manufacturing an article, comprising:

20. A program for causing a computer to execute a process for evaluating a substrate, The processing includes a step of acquiring information indicating the state of the substrate by processing a plurality of evaluation values ​​obtained from respective images of a plurality of marks provided on the substrate while assigning weights to the plurality of evaluation values, and the plurality of marks includes at least two marks that are imaged simultaneously.

Images