Semiconductor device and electric power conversion device using the same

JP2024175486APending Publication Date: 2024-12-18MINEBEA POWER SEMICON DEVICE INC
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Patent Information

Application Number
JP2023093315
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-06-06
Publication Date
2024-12-18

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Abstract

To provide a high-efficiency semiconductor device having a power conversion function by a bridge circuit using a plurality of semiconductor elements.SOLUTION: A semiconductor device 10 includes a MOSFET bridge circuit constructed by serially connecting two MOSFETs 1 as a synchronous rectification type element, and parallely connecting two pairs of a serial circuit of each MOSFET 1. In a connection part of the two MOSFETs 1 serially connected, AC input terminals 11 and 12 are connected. On a drain side of one MOSFET 1 of the two MOSFETs 1 serially connected, a DC output terminal (+)13 is connected. On a source side of the other MOSFET 1, a DC output terminal (-)14 is connected. An AC power input from the AC input terminals 11 and 12 is converted into a DC power by a MOSFET bridge circuit constructed by four MOSFETs, and is output from the DC output terminal (+)13 and the DC output terminal (-)14.SELECTED DRAWING: Figure 1A
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