Semiconductor device

Abstract

To provide a semiconductor device that can stabilize the characteristics.SOLUTION: According to an embodiment, a semiconductor device includes first to fifth electrodes, a semiconductor member, a first insulating member, and first and second connecting members. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region includes Alx1Ga1-x1 N (0≤x1<1). The second semiconductor region includes Alx2Ga1-x2 N (0<x2<1, x1<x2). The first connecting member electrically connects the fifth electrode to the first electrode. The second connecting member electrically connects the fourth electrode to the third electrode.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] For example, stable characteristics are desired in semiconductor devices such as transistors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-9774 A Summary of the Invention [Problem to be solved by the invention]

[0004] An embodiment of the present invention provides a semiconductor device capable of stabilizing characteristics. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, a semiconductor member, a first insulating member, a first connection member, and a second connection member. A direction from the first electrode to the second electrode is along a first direction. The third electrode includes a first electrode portion. A position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The fifth electrode includes a first electrode region. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region is Al x1 Ga 1-x1It includes N(0≦x1<1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region. The directions from the first partial region to the first electrode, from the second partial region to the second electrode, and from the third partial region to the first electrode portion are along a second direction intersecting the first direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction. The direction from the second partial region to the sixth partial region intersects the second direction. The direction from the sixth partial region to the fourth electrode is along the second direction. The direction from the sixth partial region to the seventh partial region is along a first intersection direction intersecting the second direction. The second semiconductor region contains Al x2 Ga 1-x2 It contains N(0<x2<1, x1<x2). The second semiconductor region includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the second direction. The direction from the fifth partial region to the second semiconductor portion is along the second direction. The direction from the seventh partial region to the third semiconductor portion is along the second direction. The third semiconductor portion is in contact with at least a part of the first electrode region. The first insulating member includes a first insulating region. The first insulating region is between the third partial region and the first electrode portion in the second direction. At least a part of the first insulating region is between the fourth partial region and the fifth partial region in the first direction. The first connecting member electrically connects the fifth electrode to the first electrode. The second connecting member electrically connects the fourth electrode to the third electrode.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Diagram 2]FIG. 2 is a circuit diagram illustrating the semiconductor device according to the first embodiment. [Diagram 3] FIG. 3 is a graph illustrating some characteristics of the semiconductor device according to the first embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a fourth electrode 54, a fifth electrode 55, a semiconductor member 10M, and a first insulating member 41.

[0009] The direction from the first electrode 51 to the second electrode 52 is along a first direction D1. The first direction D1 is defined as the X-axis direction. A direction perpendicular to the X-axis direction is defined as the Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

[0010] The third electrode 53 includes a first electrode portion 53a. A position of the first electrode portion 53a in the first direction D1 is between a position of the first electrode 51 in the first direction D1 and a position of the second electrode 52 in the first direction D1. For example, at least a part of the third electrode 53 may be provided between the first electrode 51 and the second electrode 52 in the first direction D1.

[0011] The fifth electrode 55 includes a first electrode region 55a.

[0012] The semiconductor member 10M includes a first semiconductor region 10 and a second semiconductor region 20. In this example, the semiconductor device 110 includes a base body 10S and a nitride semiconductor layer 10B. The nitride semiconductor layer 10B is provided on the base body 10S. The first semiconductor region 10 is provided on the nitride semiconductor layer 10B. The second semiconductor region 20 is provided on the first semiconductor region 10. The base body 10S may be, for example, a silicon substrate or a SiC substrate. The nitride semiconductor layer 10B includes, for example, a nitride semiconductor. The nitride semiconductor layer 10B includes, for example, Al, Ga, and N. The nitride semiconductor layer 10B is, for example, a buffer layer.

[0013] The first semiconductor region 10 is Al x1 Ga 1-x1 N (0≦x1<1). The composition ratio x1 is, for example, not less than 0 and not more than 0.1. In one example, the first semiconductor region 10 is a GaN layer.

[0014] The first semiconductor region 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, a fifth partial region 15, a sixth partial region 16, and a seventh partial region 17. The direction from the first partial region 11 to the first electrode 51, the direction from the second partial region 12 to the second electrode 52, and the direction from the third partial region 13 to the first electrode portion 53a (at least a part of the third electrode 53) are aligned along a second direction D2. The second direction D2 intersects with the first direction D1. The second direction D2 is, for example, the Z-axis direction.

[0015] The position of the fourth partial region 14 in the first direction D1 is between the position of the first partial region 11 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the fifth partial region 15 in the first direction D1 is between the position of the third partial region 13 in the first direction D1 and the position of the second partial region 12 in the first direction D1.

[0016] The direction from the second partial region 12 to the sixth partial region 16 intersects with the second direction D2. The direction from the second partial region 12 to the sixth partial region 16 may be any direction along the XY plane.

[0017] The direction from the sixth partial region 16 to the fourth electrode 54 is along the second direction D2. The direction from the sixth partial region 16 to the seventh partial region 17 is along the first crossing direction Dx1. The first crossing direction Dx1 intersects the second direction D2. The first crossing direction Dx1 may be along the first direction D1. In the example of FIG. 1, the first crossing direction Dx1 is along the X1-axis direction. The X1-axis direction is perpendicular to the Z-axis direction. The Y1-axis direction is perpendicular to the X1-axis direction and the Z-axis direction.

[0018] In the first to seventh partial regions 11 to 17, the boundaries with each other may be unclear. Among the first semiconductor region 10, the region overlapping the first electrode 51 in the second direction D2 corresponds to the first partial region 11. Among the first semiconductor region 10, the region overlapping the second electrode 52 in the second direction D2 corresponds to the second partial region 12. Among the first semiconductor region 10, the region overlapping the third electrode 53 in the second direction D2 corresponds to the third partial region 13. Among the first semiconductor region 10, the region overlapping the fourth electrode 54 in the second direction D2 corresponds to the sixth partial region 16.

[0019] The second semiconductor region 20 is Al x2 Ga 1-x2 It contains N (0 < x2 < 1, x1 < x2). The composition ratio x2 is 0.15 or more and 0.3 or less. The second semiconductor region 20 is, for example, an AlGaN layer.

[0020] The second semiconductor region 20 includes a first semiconductor portion 21, a second semiconductor portion 22, and a third semiconductor portion 23. The direction from the fourth partial region 14 to the first semiconductor portion 21 is along the second direction D2. The direction from the fifth partial region 15 to the second semiconductor portion 22 is along the second direction D2. The direction from the seventh partial region 17 to the third semiconductor portion 23 is along the second direction D2. The third semiconductor portion 23 is in contact with at least a part (portion 55p) of the first electrode region 55a.

[0021] The first insulating member 41 includes a first insulating region 41a. The first insulating region 41a is between the third partial region 13 and the first electrode portion 53a in the second direction D2. At least a portion of the first insulating region 41a is between the fourth partial region 14 and the fifth partial region 15 in the first direction D1.

[0022] The fifth electrode 55 is electrically connected to the first electrode 51. Alternatively, the fifth electrode 55 can be electrically connected to the first electrode 51.

[0023] The fourth electrode 54 is electrically connected to the third electrode 53. Alternatively, the fourth electrode 54 can be electrically connected to the third electrode 53.

[0024] In this example, the semiconductor device 110 includes a first connection member 61 and a second connection member 62. The first connection member 61 electrically connects the fifth electrode 55 to the first electrode 51. The second connection member 62 electrically connects the fourth electrode 54 to the third electrode 53. The first connection member 61 and the second connection member 62 may be included in the semiconductor device 110. The first connection member 61 and the second connection member 62 may be provided separately from the semiconductor device 110. In this case, for example, at least one of a terminal 51T electrically connected to the first electrode 51, a terminal 53T electrically connected to the third electrode 53, a terminal 54T electrically connected to the fourth electrode 54, and a terminal 55T electrically connected to the fifth electrode 55 may be provided. These terminals are electrically connected by a connection member.

[0025] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. A portion of the semiconductor device 110 including the first to third electrodes 51 to 53 functions as a transistor.

[0026] A carrier region 10C is formed in a portion of the first semiconductor region 10 facing the second semiconductor region 20. The carrier region 10C is, for example, a two-dimensional electron gas. The portion including the first to third electrodes 51 to 53 is, for example, a HEMT (High Electron Mobility Transistor).

[0027] For example, the distance between the first electrode 51 and the third electrode 53 is shorter than the distance between the third electrode 53 and the second electrode 52. The first electrode 51 is electrically connected to, for example, the first semiconductor portion 21. The first electrode 51 may be electrically connected to, for example, the first partial region 11. The second electrode 52 is electrically connected to, for example, the second semiconductor portion 22. The second electrode 52 may be electrically connected to, for example, the second partial region 12.

[0028] In the embodiment, the portion including the fourth electrode 54 and the fifth electrode 55 functions as, for example, a two-terminal nonlinear element.

[0029] FIG. 2 is a circuit diagram illustrating the semiconductor device according to the first embodiment. As shown in FIG. 2, a transistor 50T including a first electrode 51, a second electrode 52, and a third electrode 53 is provided. A diode 50D including a fourth electrode 54 and a fifth electrode 55 is provided. The fourth electrode 54 functions as a cathode of the diode 50D. The fifth electrode 55 functions as an anode of the diode 50D. The cathode of the diode 50D is electrically connected to the gate of the transistor 50T. The anode of the diode 50D is electrically connected to the source of the transistor 50T. For example, the gate is electrically connected to an external circuit (such as a control circuit) via a resistor Rg.

[0030] For example, a negative bias may be applied to the gate electrode of the transistor 50T. This may cause the threshold voltage to fluctuate, resulting in, for example, negative bias temperature instability (nBTI).

[0031] In the embodiment, the source of the transistor 50T is electrically connected to the anode of the diode 50D. The gate of the transistor 50T is electrically connected to the cathode of the diode 50D. This suppresses the variation in threshold voltage caused by application of a negative bias. According to the embodiment, it is possible to provide a semiconductor device that can stabilize characteristics.

[0032] For example, a reference example in which a discrete diode is provided in addition to a transistor is conceivable. In this reference example, parasitic inductance becomes large. Therefore, it is difficult to obtain a desired operation in high-speed switching.

[0033] In this embodiment, the transistor 50T and the diode 50D are provided on one semiconductor member 10M. Parasitic inductance can be suppressed. Stable operation can be obtained even in high-speed switching.

[0034] In the embodiment, for example, the material of the fifth electrode 55 is different from the material of the first electrode 51. The material of the portion of the fifth electrode 55 that contacts the semiconductor member 10M is different from the material of the portion of the first electrode 51 that contacts the semiconductor member 10M.

[0035] The fourth electrode 54, the fifth electrode 55, and the semiconductor member 10M function as a diode 50D. The diode 50D is, for example, a Schottky diode.

[0036] The fifth electrode 55 includes at least one selected from the group consisting of Ni, W, and TiN. These materials are capable of forming a Schottky contact with a nitride semiconductor. For example, the fifth electrode 55 is in Schottky contact with the third semiconductor portion 23. For example, the fifth electrode 55 includes a film including at least one selected from the group consisting of Ni, W, and TiN, and this film may be in contact with the nitride semiconductor (for example, the third semiconductor portion 23).

[0037] On the other hand, the fourth electrode 54 includes at least one selected from the group consisting of, for example, Ti and Al. These materials can form ohmic contact with a nitride semiconductor. For example, the fourth electrode 54 is in ohmic contact with the third semiconductor portion 23 (for example, AlGaN). The fourth electrode 54 may be in ohmic contact with the sixth sub-region 16 (for example, GaN). For example, the fourth electrode 54 includes a film including at least one selected from the group consisting of, for example, Ti and Al, and this film may be in contact with a nitride semiconductor (for example, the third semiconductor portion 23).

[0038] In the embodiment, the seventh partial region 17 may be provided between the sixth partial region 16 and another part (part 55q) of the first electrode region 55a in the first intersecting direction Dx1. For example, the part of the first electrode region 55a may be provided in a recess region provided in the semiconductor member 10M. The other part (part 55q) of the first electrode region 55a may be in contact with the seventh partial region 17. For example, the fifth electrode 55 is in Schottky contact with the seventh partial region 17.

[0039] 1, the fifth electrode 55 may include a second electrode region 55b. The second electrode region 55b may be continuous with the first electrode region 55a. The first electrode region 55a is provided, for example, to correspond to a side surface of a recess provided in the semiconductor member 10M. The second electrode region 55b is provided, for example, to correspond to a bottom portion of the recess.

[0040] The first semiconductor region 10 may include an eighth partial region 18. The position of the seventh partial region 17 in the first intersecting direction Dx1 is between the position of the sixth partial region 16 in the first intersecting direction Dx1 and the position of the eighth partial region 18 in the first intersecting direction Dx1. The eighth partial region 18 corresponds to a region of the first semiconductor region 10 that overlaps with the fifth electrode 55 in the second direction D2.

[0041] A part of the seventh partial region 17 is between the sixth partial region 16 and the second electrode region 55b in the first intersecting direction Dx1. For example, at least a part of the seventh partial region 17 contacts the second electrode region 55b. The second electrode region 55b may be in Schottky contact with the seventh partial region 17 and the eighth partial region 18.

[0042] As shown in FIG. 1, in this example, the semiconductor device 110 includes a sixth electrode 56. The sixth electrode 56 is electrically connected to the fourth electrode 54. The semiconductor device 110 may further include a third connection member 63. For example, the first semiconductor region 10 may include a ninth partial region 19 and a tenth partial region 19A. The position of the eighth partial region 18 in the first intersecting direction Dx1 is between the position of the seventh partial region 17 in the first intersecting direction Dx1 and the position of the ninth partial region 19 in the first intersecting direction Dx1. The position of the tenth partial region 19A in the first intersecting direction Dx1 is between the position of the eighth partial region 18 in the first intersecting direction Dx1 and the position of the ninth partial region 19 in the first intersecting direction Dx1.

[0043] The direction from the ninth partial region 19 to the sixth electrode 56 is along the second direction D2 (Z-axis direction). The ninth partial region 19 corresponds to a region of the first semiconductor region 10 that overlaps with the sixth electrode 56 in the second direction D2. The tenth partial region 19A is a region between the eighth partial region 19 and the ninth partial region 19 in the first intersecting direction Dx1. The boundaries between the eighth partial region 18, the tenth partial region 19A, and the ninth partial region 19 may be unclear.

[0044] The second semiconductor region 10 includes a fourth semiconductor portion 24. The direction from the tenth portion region 19A to the fourth semiconductor portion 24 is along the second direction D2. The third connection member 63 electrically connects the sixth electrode 56 to the fourth electrode 54.

[0045] For example, the sixth electrode 56 may be continuous with the fourth electrode 54 in a cross section different from the cross section illustrated in Fig. 1. For example, the sixth electrode 56 may be electrically connected to the fourth electrode 54 by a different connection member (a third connection member 63).

[0046] The sixth electrode 56 includes, for example, at least one selected from the group consisting of Ti and Al. For example, the sixth electrode 56 is in ohmic contact with the fourth semiconductor portion 24.

[0047] 1, the fifth electrode 55 may include a third electrode region 55c. For example, the third electrode region 55c is connected to the second electrode region 55b. For example, the second electrode region 55b is between the first electrode region 55a and the third electrode region 55c. For example, the third electrode region 55c contacts the fourth semiconductor portion 24 and a part of the tenth portion region 19A. For example, the fifth electrode 55 may be in Schottky contact with the fourth semiconductor portion 24.

[0048] As shown in FIG. 1, at least a portion of the third electrode 53 is between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction D1. The first insulating member 41 includes a second insulating region 41b and a third insulating region 41c. The second insulating region 41b is between the first semiconductor portion 21 and at least a portion of the third electrode 53 in the first direction D1. The third insulating region 41c is between at least a portion of the third electrode 53 and the second semiconductor portion 22 in the first direction D1. The third electrode 53 is, for example, a recessed gate electrode. For example, a high threshold voltage is obtained. For example, an enhancement mode operation is possible.

[0049] In this example, the semiconductor device 110 includes a second insulating member 42. The second insulating member 42 includes, for example, a first insulating portion 42a and a second insulating portion 42b. The first semiconductor portion 21 is between the fourth partial region 14 and the first insulating portion 42a in the second direction D2. The second semiconductor portion 22 is between the fifth partial region 15 and the second insulating portion 42b in the second direction D2.

[0050] The first insulating member 41 includes at least one selected from the group consisting of silicon and aluminum, and oxygen. The first insulating member 41 includes, for example, at least one selected from the group consisting of silicon oxide and aluminum oxide. In one example, the first insulating member 41 is a silicon oxide layer.

[0051] The second insulating member 42 contains silicon and nitrogen. The second insulating member 42 contains, for example, silicon nitride.

[0052] The first insulating member 41 does not contain nitrogen, or the concentration of nitrogen in the first insulating member 41 is lower than the concentration of nitrogen in the second insulating member 42. The second insulating member 42 does not contain oxygen. Or, the concentration of oxygen in the second insulating member 42 is lower than the concentration of oxygen in the first insulating member 41.

[0053] By providing such a second insulating member 42, for example, the characteristics of the second semiconductor region 20 become more stable.

[0054] As shown in FIG. 1, the semiconductor device 110 may include a nitride member 43. The nitride member 43 contains Al x3 Ga 1-x3 N (0 <x3 ≦ 1, x2 <x3). The composition ratio x3 is, for example, 0.8 or more and 1 or less. The nitride member 43 may be, for example, an AlN layer.

[0055] The nitride member 43 includes a first nitride region 43a. The first nitride region 43a is provided between the third partial region 13 and the first insulating region 41a in the second direction D2. By providing the nitride member 43, for example, the characteristics of the semiconductor member 10M become stable. By providing the nitride member 43, for example, it is easier to lower the on-resistance.

[0056] A part of the nitride member 43 may be provided between the semiconductor member 10M and the second insulating region 41b. A part of the nitride member 43 may be provided between the semiconductor member 10M and the third insulating region 41c. A part of the nitride member 43 may be provided between the first insulating portion 42a and the first insulating member 41. A part of the nitride member 43 may be provided between the second insulating portion 42b and the first insulating member 41.

[0057] FIG. 3 is a graph illustrating some characteristics of the semiconductor device according to the first embodiment. 3 illustrates the measurement results of the characteristics of a diode 50D including a fourth electrode 54, a fifth electrode 55, and a semiconductor member 10M. The horizontal axis of FIG. 3 is the voltage Va applied between the fourth electrode 54 and the fifth electrode 55. The vertical axis is the current density Ja. As shown in FIG. 3, when the applied voltage Va is less than about 0.7 V, substantially no current flows. When the voltage Va is about 0.7 or more, the current density Ja increases as the voltage Va increases.

[0058] In the embodiment, the thickness of the first semiconductor portion 21 along the second direction D2 is thinner than the thickness of the fourth partial region 14 along the second direction D2. The carrier region 10C is stably formed. The thickness of the first semiconductor portion 21 along the second direction D2 is, for example, not less than 15 nm and not more than 40 nm. The thickness of the fourth partial region 14 along the second direction D2 is, for example, not less than 100 nm and not more than 1000 nm.

[0059] In the embodiment, the nitride member 43 has a thickness of, for example, 1 nm or more and 5 nm or less. The second insulating member 42 has a thickness of, for example, 5 nm or more and 20 nm or less. Information on the concentration (or composition ratio) of elements in the member is obtained by, for example, SIMS (Secondary Ion Mass Spectrometry) or the like.

[0060] The third electrode 53 includes at least one selected from the group consisting of TiN, Ni, and W, for example.

[0061] According to the embodiment, it is possible to provide a semiconductor device capable of stabilizing characteristics.

[0062] In the embodiment, the "nitride semiconductor" is B x In y Al z Ga 1-x-y-zIt includes all semiconductors with compositions in which the composition ratios x, y, and z in the chemical formula N (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z≦1) are changed within their respective ranges. In the above chemical formula, the term "nitride semiconductor" also includes those that further contain Group V elements other than N (nitrogen), those that further contain various elements added to control various physical properties such as the conductivity type, and those that further contain various elements that are unintentionally included.

[0063] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the semiconductor device, such as the electrodes, semiconductor members, insulating members, connecting members, and nitride members, are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0064] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0065] In addition, all semiconductor devices that can be implemented by those skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.

[0066] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0067] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0068] 10...first semiconductor region, 10B...nitride semiconductor layer, 10C...carrier region, 10M...semiconductor member, 10S...base, 11-19...first to ninth partial regions, 19A...tenth partial region, 20...second semiconductor region, 21-24...first to fourth semiconductor portions, 41...first insulating member, 41a-41c...first to third insulating regions, 42...second insulating member, 42a, 42b...first and second insulating portions, 43...nitride member, 43a...first nitride region, 50D...diode, 50T...transistor, 51-56...first to sixth electrodes, 51T, 53T, 54T, 55T, 56T...terminal, 53a...first electrode portion, 55a-55c...first to third electrode regions, 55p, 55q... portions; 61-63... first to third connection members; 110... semiconductor device; D1, D2... first and second directions; Dx1... first intersecting direction; Ja... current density; Rg... resistance; Va... voltage

Claims

1. A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; A fourth electrode; and a fifth electrode including a first electrode region; A semiconductor member including a first semiconductor region and a second semiconductor region, The first semiconductor region is Al ｘ１ G １－ｘ１ N (0≦x1<1), the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region, a direction from the first partial region to the first electrode, a direction from the second partial region to the second electrode, and a direction from the third partial region to the first electrode portion are along a second direction intersecting with the first direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction, a direction from the second partial region to the sixth partial region intersects with the second direction, a direction from the sixth partial region to the fourth electrode is along the second direction, and a direction from the sixth partial region to the seventh partial region is along a first intersecting direction intersecting with the second direction; The second semiconductor region is Al ｘ２ G １－ｘ２ N (0<x2<1, x1<x2), the second semiconductor region includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the second direction, the direction from the fifth partial region to the second semiconductor portion is along the second direction, the direction from the seventh partial region to the third semiconductor portion is along the second direction, and the third semiconductor portion is in contact with at least a portion of the first electrode region; a first insulating member including a first insulating region, the first insulating region being between the third partial region and the first electrode portion in the second direction, and at least a portion of the first insulating region being between the fourth partial region and the fifth partial region in the first direction; A substrate; A ｘ３ G １－ｘ３ A nitride member including N (0<x3≦1, x2<x3); Equipped with the first semiconductor region is between the base and the second semiconductor region in the second direction; the nitride member includes a first nitride region; the first nitride region is provided between the third region and the first insulating region in the second direction; the fifth electrode includes a second electrode region; the first semiconductor region includes an eighth partial region, a position of the seventh partial region in the first intersecting direction is between a position of the sixth partial region in the first intersecting direction and a position of the eighth partial region in the first intersecting direction, a portion of the seventh partial region is located between the sixth partial region and the second electrode region in the first intersecting direction; At least a portion of the seventh region is in contact with the second electrode region, A semiconductor device, wherein a distance along the second direction between the substrate and the first nitride region is substantially the same as a distance along the second direction between the substrate and the second electrode region.

2. a first connection member that electrically connects the fifth electrode to the first electrode; a second connection member electrically connecting the fourth electrode to the third electrode; The semiconductor device according to claim 1 , further comprising:

3. 3. The semiconductor device according to claim 1, wherein said fifth electrode includes at least one selected from the group consisting of Ni, W, and TiN.

4. 4. The semiconductor device according to claim 1, wherein the fifth electrode is in Schottky contact with the third semiconductor portion.

5. 5. The semiconductor device according to claim 1, wherein the seventh partial region is located between the sixth partial region and another part of the first electrode region in the first intersecting direction.

6. the fifth electrode is in Schottky contact with the seventh partial region; 6. The semiconductor device according to claim 1, wherein the fourth electrode is in ohmic contact with the third semiconductor portion.

7. A sixth electrode electrically connected to the fourth electrode, the first semiconductor region includes a ninth partial region and a tenth partial region, a position of the eighth partial region in the first intersecting direction is between a position of the seventh partial region in the first intersecting direction and a position of the ninth partial region in the first intersecting direction, a position of the tenth partial region in the first intersecting direction is between the position of the eighth partial region in the first intersecting direction and the position of the ninth partial region in the first intersecting direction, A direction from the ninth partial region to the sixth electrode is along the second direction, the second semiconductor region includes a fourth semiconductor portion; 7. The semiconductor device according to claim 1, wherein a direction from said tenth partial region to said fourth semiconductor portion is along said second direction.

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