Bonding method of electronic device and method of mass transferring electronic devices

Abstract

To provide a bonding method of an electronic device in which a number of light-emitting elements is loaded on a substrate, and a method of mass transferring electronic devices.SOLUTION: A method of bonding a target substrate 100 comprising a first top face 100A including a bond region including at least one pad 120 and a first bottom face 100B opposed with the first top face with an electronic device 200 comprising an electronic device main body 210 including a second top face 210A and a second bottom face 210B which are opposed and at least one electrode 220 includes: positioning at least one electrode, which is formed on the second bottom face of the electronic device main body and electrically connected with the electronic device main body, with at least one pad in a bond region 110 of the target substrate; and welding the at least one electrode to the at least one pad in the bond region of the target substrate using pulse-type laser beams.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The present invention discloses a method for bonding electronic devices and a method for transferring a large number of electronic devices. [Background technology]

[0002] Light emitting diodes have the advantages of active light emission, high brightness, and energy saving, and are therefore widely applied in technical fields such as lighting, displays, and projectors. Micro LED displays are gradually becoming a new generation of display technology. However, a full high density (FHD) display has about 2 million pixels of 1920 rows x 1080 columns, and each pixel is further divided into three subpixels: red, green, and blue, so a full high density light emitting diode display has a total of about 6 million LED dies. In order to cut and attach the 6 million dies to the display panel substrate, a key technology is required to accurately transfer and fix a large number of micro light emitting diodes to the display panel substrate.

[0003] Conventional electronic device bonding methods mainly use reflow welding, in which the electronic device is heated with tin paste to reflow and then welded to a target substrate. However, reflow welding has drawbacks such as drift of the electronic device due to uneven heating during the reflow process, short circuit of the electronic device due to an excessive amount of tin paste, empty welding due to an insufficient amount of tin paste, and cold welding due to a low reflow temperature.

[0004] In addition, the conventional methods for transferring electronic devices in large quantities mainly include electrostatic transfer, magnetic transfer, micro-transfer, fluid assembly, etc. However, the transfer speed and yield of these methods for transferring electronic devices in large quantities need to be further improved.

[0005] The specification of the applicant's Republic of China Patent Application No. TW11212737 discloses a new method for joining electronic devices and a method for transferring a large number of electronic devices using laser welding to improve the shortcomings of the conventional method for joining electronic devices and the conventional method for transferring a large number of electronic devices. However, since a laser with a certain power is used, the high temperature time is long during laser welding, and the electronic devices and the target substrate to which they are joined may be damaged at the same time, resulting in a decrease in the yield rate of production. In view of this, there is an urgent need in the industry for a new method for joining electronic devices and a method for transferring a large number of electronic components that do not damage the electronic devices and the target substrate to which they are joined. Summary of the Invention

[0006] The present invention discloses a method for bonding an electronic device, the steps of which include: providing a target substrate, the target substrate having a first upper surface and a first lower surface facing each other, the first upper surface including a bonding area, the bonding area including at least one pad; providing an electronic device comprising an electronic device body and at least one electrode, the electronic device body having a second upper surface and a second lower surface facing each other, the at least one electrode being formed on the second lower surface of the electronic device body and electrically connected to the electronic device body, the electronic device being aligned to the bonding area of ​​the target substrate, and the at least one electrode being aligned to at least one pad in the bonding area; providing a pulsed laser light, and causing the electronic device to be welded to the at least one pad of the bonding area of ​​the target substrate by the pulsed laser light through the at least one electrode.

[0007] In the above-mentioned electronic device bonding method, the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0008] In the above-mentioned electronic device joining method, the flexible printed wiring board includes a flexible insulating substrate, a circuit formed on a surface of the flexible insulating substrate, and an insulating layer covering the circuit, and the pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

[0009] In the above-mentioned method for bonding an electronic device, the electronic device is selected from one or more of the group consisting of a light-emitting diode, a laser diode, and a semiconductor element.

[0010] In the above-mentioned method for bonding an electronic device, the light emitted by the light-emitting diode is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

[0011] In the above-mentioned electronic device bonding method, the laser diode has a wavelength of 390 nm to 1700 nm.

[0012] In the above-mentioned method for bonding an electronic device, the semiconductor element is selected from one or more of the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

[0013] In the above-mentioned method for bonding an electronic device, the material of the at least one electrode and / or the at least one pad is a metal, a metal alloy or a metal oxide, respectively.

[0014] The above-mentioned method for bonding electronic devices further includes a step of forming solder on the at least one pad and / or the at least one electrode, indirectly contacting the at least one electrode of the electronic device with at least one electrode of the target substrate by the solder, directly or indirectly heating the solder with the pulsed laser light to obtain heated solder, and bonding the at least one electrode of the electronic device to at least one pad in the bonding area of ​​the target substrate by the heated solder.

[0015] In the above-mentioned electronic device bonding method, the pulsed laser light is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source or a pulsed optical fiber laser source.

[0016] In the above-mentioned method for bonding electronic devices, the frequency of the pulsed laser light is 1 Hz to 1000 GHz, and the pulse width of the pulsed laser light is 0.1 femtoseconds to 0.9 seconds.

[0017] In the above-mentioned method for bonding electronic devices, the pulsed laser light has a wavelength of 190 nm to 1000 nm.

[0018] The above-mentioned electronic device bonding method further includes a step of providing a transparent or semi-transparent dielectric layer on a second upper surface of the electronic device body, and the pulsed laser light is irradiated from above the electronic device toward the electronic device body through the transparent or semi-transparent medium layer.

[0019] The above-mentioned electronic device bonding method further includes a step of providing a transparent or semi-transparent dielectric layer on a first lower surface of the target substrate, and the pulsed laser light is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent medium layer.

[0020] The present invention discloses a method for transferring a large number of electronic devices, the steps of which include: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, on which a plurality of electronic devices are formed, the electronic devices each including an electronic device body and at least one electrode, the electronic device body having a second upper surface and a second lower surface opposite to each other, the at least one electrode being connected to the electronic device body; a first lower surface of the electronic device body and electrically connected to the electronic device body, the second lower surface of the electronic device body facing the first upper surface of the target substrate, the electronic devices being aligned to the bonding areas of the target substrate and the at least one electrode of the electronic devices being aligned to the at least one pad of the bonding areas; providing a pulsed laser light to weld the electronic devices to the at least one pad of the bonding areas of the target substrate with the pulsed laser light by the at least one electrode.

[0021] In the above method for transferring a large number of electronic devices, the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0022] In the above-mentioned method for transferring a large number of electronic devices, the flexible printed wiring board includes a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit; the pad is formed on the surface of the insulating layer and electrically connected to the circuit.

[0023] In the above method for transferring a large amount of electronic devices, the electronic devices are one or more selected from the group consisting of light emitting diodes, laser diodes, and semiconductor elements.

[0024] In the above method for transferring a large number of electronic devices, the light emitted by the light emitting diode is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0025] In the above method for transferring a large amount of electronic devices, the wavelength of the laser diode is 390 nm to 1700 nm.

[0026] In the above method for transferring large amounts of electronic devices, the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs and analog ICs.

[0027] In the above mass electronic device transfer method, the material of the at least one electrode of the electronic device and / or the at least one pad of the bonding area is a metal, a metal alloy or a metal oxide, respectively.

[0028] The above method for transferring a large number of electronic devices further includes a step of forming solder on the at least one pad of each of the bonding areas of the target substrate and / or on the at least one electrode of each of the electronic devices; bringing the at least one electrode of each of the electronic devices into indirect contact with the at least one pad of each of the bonding areas of the target substrate by the solder, heating the solder directly or indirectly by the pulsed laser light to obtain heated solder, and bonding the at least one electrode of each of the electronic devices to the at least one pad of each of the bonding areas of the target substrate by the heated solder.

[0029] In the above method for transferring a large amount of electronic devices, the pulsed laser light is generated by a pulsed laser source, which is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source or a pulsed optical fiber laser source.

[0030] In the above method for transferring a large number of electronic devices, the frequency of the pulsed laser light is 1 Hz to 1000 GHz, and the pulse width of the pulsed laser light is 0.1 femtoseconds to 0.9 seconds.

[0031] In the above method for transferring a large number of electronic devices, the pulsed laser light has a wavelength of 190 nm to 1000 nm.

[0032] In the above-mentioned method for transferring a large number of electronic devices, the temporary substrate is removed by being photolyzed or thermally decomposed while the pulsed laser light is irradiated from above the temporary substrate toward the temporary substrate, or is directly peeled off and removed after at least one electrode of each of the electronic devices is bonded to the at least one pad of each of the bonding regions of the target substrate.

[0033] The above-mentioned method for transferring a large number of electronic devices further includes the step of providing a transparent or semi-transparent dielectric layer on the temporary substrate; the pulsed laser light is irradiated onto the temporary substrate and the electronic device body from above the electronic device through the transparent or semi-transparent dielectric layer, respectively.

[0034] The present invention discloses another method for transferring a large amount of electronic devices, the steps of which include: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, on which a plurality of electronic devices are formed, each of the electronic devices including an electronic device body and at least one electrode, the electronic device body having a second upper surface and a second lower surface opposite to each other, the at least one electrode being connected to the electronic device body; a first laser beam is provided to weld each of the electronic devices to the at least one pad of each of the bonding areas of the target substrate by the at least one electrode of the first laser beam, the at least one electrode being formed on a second lower surface of a body and electrically connected to the electronic device body, the second lower surface of the electronic device body facing the first upper surface of the target substrate, the electronic devices being aligned to the bonding areas of the target substrate, and the at least one electrode of each of the electronic devices being aligned to the at least one pad of each of the bonding areas of the target substrate;

[0035] In the above another method for transferring a large number of electronic devices, the target substrate is a semiconductor target substrate, a ceramic target substrate, a metal target substrate, a glass target substrate, a printed wiring board, or a flexible printed wiring board.

[0036] In the above-mentioned another method for transferring a large amount of electronic devices, the flexible printed wiring board includes a flexible insulating substrate, a circuit formed on a surface of the flexible insulating substrate, and an insulating layer covering the circuit; the pad is formed on the surface of the insulating layer and electrically connected to the circuit.

[0037] In the above alternative mass electronic device transfer method, the electronic devices are selected from one or more of the group consisting of light emitting diodes, laser diodes, and semiconductor elements.

[0038] In the above-mentioned another method for transferring a large number of electronic devices, the light emitted by the light emitting diode is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0039] In the above-mentioned method for mass transferring electronic devices, the wavelength of the laser diode is 390 nm to 1700 nm.

[0040] In the alternative mass electronic device transfer method described above, the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

[0041] In the above another method for transferring a large number of electronic devices, a material of the at least one electrode of each of the electronic devices and / or the at least one pad of each of the bonding regions is a metal, a metal alloy or a metal oxide, respectively.

[0042] In the above-mentioned another method for transferring a large number of electronic devices, the method further includes a step of forming solder on the at least one pad of each of the bonding areas of the target substrate and / or on the at least one electrode of each of the electronic devices; bringing the at least one electrode of each of the electronic devices into indirect contact with the at least one pad of each of the bonding areas of the target substrate by the solder, heating the solder directly or indirectly by the first laser light to obtain heated solder, and bonding the at least one electrode of each of the electronic devices to the at least one pad of each of the bonding areas of the target substrate by the heated solder.

[0043] In the above-mentioned another method for transferring a large number of electronic devices, after each of the electronic devices is bonded to the at least one pad of each of the bonding areas of the target substrate by the at least one electrode, the temporary substrate is removed by irradiating the temporary substrate from above with a second laser light to photodecompose or thermally decompose the temporary substrate, or the temporary substrate is directly peeled off and removed.

[0044] In the above another method for transferring a large amount of electronic devices, the first laser light is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source.

[0045] In the above-mentioned alternative method for transferring a large number of electronic devices, the first laser light has a frequency of 1 Hz to 1000 GHz and a pulse width of 0.1 femtoseconds to 0.9 seconds.

[0046] In the above-mentioned method for transferring a large number of electronic devices, the wavelength of the first laser light is 190 nm to 1000 nm.

[0047] In the above-mentioned another method for transferring a large number of electronic devices, the wavelength of the second laser light is 190 nm to 1000 nm.

[0048] The method further includes providing a transparent or semi-transparent dielectric layer on a first lower surface of the target substrate; the first laser light is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent dielectric layer. [Brief description of the drawings]

[0049] [Figure 1A] 2A to 2C are schematic cross-sectional views of a bonding process for an electronic device according to Example 1 of the present invention. [Figure 1B] 2A to 2C are schematic cross-sectional views of a bonding process for an electronic device according to Example 1 of the present invention.

[0050] [Figure 2A] 5A to 5C are schematic cross-sectional views of a bonding process for an electronic device according to Example 2 of the present invention. [Figure 2B] 5A to 5C are schematic cross-sectional views of a bonding process for an electronic device according to Example 2 of the present invention.

[0051] [Figure 3A] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 3 of the present invention. [Figure 3B] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 3 of the present invention.

[0052] [Figure 4A] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 4 of the present invention. [Figure 4B] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 4 of the present invention.

[0053] [Figure 5A] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 5 of the present invention. [Figure 5B] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 5 of the present invention.

[0054] [Figure 6A] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 6 of the present invention. [Figure 6B] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 6 of the present invention.

[0055] [Figure 7A] 13A to 13C are schematic cross-sectional views of a bonding process for an electronic device according to Example 7 of the present invention. [Figure 7B] 13A to 13C are schematic cross-sectional views of a bonding process for an electronic device according to Example 7 of the present invention.

[0056] [Figure 8A] 13 is a cross-sectional schematic view of a bonding process for an electronic device according to Example 8 of the present invention. [Figure 8B] 13 is a cross-sectional schematic view of a bonding process for an electronic device according to Example 8 of the present invention.

[0057] [Figure 9A] 13A to 13C are schematic cross-sectional views of a bonding process for an electronic device according to Example 9 of the present invention. [Figure 9B] 13A to 13C are schematic cross-sectional views of a bonding process for an electronic device according to Example 9 of the present invention.

[0058] [Figure 10A] 13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 10 of the present invention. [Figure 10B] 13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 10 of the present invention.

[0059] [Figure 11A] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 11 of the present invention. [Figure 11B] 11A to 11C are schematic cross-sectional views of a bonding process for an electronic device according to Example 11 of the present invention.

[0060] [Figure 12A] 12A to 12C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 12 of the present invention. [Figure 12B] 12A to 12C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 12 of the present invention.

[0061] [Figure 13A] 13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 13 of the present invention. [Figure 13B] 13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 13 of the present invention.

[0062] [Figure 14A]13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 14 of the present invention. [Figure 14B] 13A to 13C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 14 of the present invention.

[0063] [Figure 15A] 15A to 15C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 15 of the present invention. [Figure 15B] 15A to 15C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 15 of the present invention.

[0064] [Figure 16A] 16 is a cross-sectional schematic diagram of a bonding process for an electronic device according to Example 16 of the present invention. [Figure 16B] 16 is a cross-sectional schematic diagram of a bonding process for an electronic device according to Example 16 of the present invention.

[0065] [Figure 17A] 17A to 17C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 17 of the present invention. [Figure 17B] 17A to 17C are cross-sectional schematic diagrams illustrating a bonding process for an electronic device according to Example 17 of the present invention.

[0066] [Figure 18A] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 18 of the present invention. [Figure 18B] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 18 of the present invention. [Figure 18C] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 18 of the present invention.

[0067] [Figure 19A] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 19 of the present invention. [Figure 19B] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 19 of the present invention. [Figure 19C]FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 19 of the present invention.

[0068] [Figure 20A] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 20 of the present invention. [Figure 20B] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 20 of the present invention. [Figure 20C] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 20 of the present invention. [Figure 20D] FIG. 23 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 20 of the present invention.

[0069] [Figure 21A] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 21 of the present invention. [Figure 21B] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 21 of the present invention. [Figure 21C] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 21 of the present invention. [Figure 21D] FIG. 21 is a cross-sectional schematic diagram of a mass electronic device transfer process according to Example 21 of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0070] In order to make the disclosure of the present invention more detailed and complete, the following provides an explanatory description of the embodiments and specific examples of the present invention. However, this is not the only way to implement or operate the specific examples of the present invention. The embodiments disclosed below may be combined with each other when beneficial, may be substituted, or may be added to one embodiment with another without the need for further description or explanation.

[0071] In the following description, numerous specific details are set forth in order to provide the reader with a thorough understanding of the following embodiments. However, embodiments of the present invention may be practiced without such specific details. In other instances, well-known structures and devices are shown only diagrammatically in the drawings to simplify the drawings.

[0072] Working Example

[0073] Example 1

[0074] First, refer to FIG. 1A. As shown in FIG. 1A, a target substrate 100 and an electronic device 200 are provided. The target substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A includes a bonding region 110. The bonding region includes at least one pad 120. The electronic device 200 has an electronic device body 210 and at least one electrode 220. The electronic device body 210 has a second upper surface 210A and a second lower surface 210B facing each other. The at least one electrode 220 is formed on the second lower surface 210B of the electronic device body 210 and electrically connected to the electronic device body 210. The electronic device 200 is aligned with the bonding region 110 of the target substrate 100. The at least one electrode 220 is aligned with the at least one pad 120 of the bonding region 110.

[0075] According to this embodiment, the target substrate 100 may be, for example, but is not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0076] According to this embodiment, the target substrate 100 will be described by taking a flexible printed wiring board as an example. The flexible printed wiring board may include a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit. The pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

[0077] According to this embodiment, the electronic device 200 is, for example, a light emitting diode, a laser diode, or a semiconductor element, but is not limited thereto. Here, the light emitted by the light emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, a processor, a memory IC, a micro element IC, a logic IC, or an analog IC, but is not limited thereto. The electronic device 200 of this embodiment 1 is described by taking a light emitting diode as an example.

[0078] According to this embodiment, the material of the at least one electrode 220 and / or the at least one pad 120, respectively, is, for example, but not limited to, a metal, a metal alloy, or a metal oxide.

[0079] Next, refer to FIG. 1B. As shown in FIG. 1B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210, and the pulsed laser light is concentrated on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, at least one electrode 220, or at least one pad 120, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100. Furthermore, the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0080] The pulsed laser light in the present embodiment 1 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0081] Example 2

[0082] First, refer to Fig. 2A. As shown in Fig. 2A, a target substrate 100 and an electronic device 200 are provided. The configurations of the target substrate 100 and the electronic device 200 are similar to those described in the first embodiment, and therefore will not be described further here.

[0083] Next, refer to FIG. 2B. As shown in FIG. 2B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100, and the pulsed laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, or at least one electrode 220, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100. Then, the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0084] The pulsed laser light in this embodiment 2 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0085] Example 3

[0086] First, refer to FIG. 3A. As shown in FIG. 3A, a target substrate 100 and an electronic device 200 are provided. The configurations of the target substrate 100 and the electronic device 200 are similar to those described in the first embodiment, and will not be described further here. Also, as shown in FIG. 3A, a solder 300 is formed on at least one pad 120 and / or at least one electrode 220. The solder 300 indirectly contacts at least one electrode 220 of the electronic device 200 with at least one pad 120 of the target substrate 100.

[0087] Next, refer to FIG. 3B. As shown in FIG. 3B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210, and the pulsed laser light is concentrated on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, at least one electrode 220, the solder 300, or at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. At least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0088] The pulsed laser light in this embodiment 3 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0089] Example 4

[0090] First, refer to FIG. 4A. As shown in FIG. 4A, a target substrate 100 and an electronic device 200 are provided. The configurations of the target substrate 100 and the electronic device 200 are similar to those described in the first embodiment, and will not be described further here. Also, as shown in FIG. 4A, a solder 300 is formed on at least one pad 120 and / or at least one electrode 220. The solder 300 indirectly contacts at least one electrode 220 of the electronic device 200 and at least one pad 120 of the target substrate 100.

[0091] Next, refer to FIG. 4B. As shown in FIG. 4B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100, and the pulsed laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, the solder 300, or at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. At least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0092] The pulsed laser light in this embodiment 4 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0093] Example 5

[0094] 5A to 5B. The bonding process of the electronic device according to the present embodiment 5 is generally similar to that according to the embodiment 1, with the difference being that in the present embodiment 5, a transparent or semi-transparent dielectric layer 400 is further provided on the second upper surface 210A of the electronic device body 210. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, at least one electrode 220, or at least one pad 120, to form a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and at least one pad 120 of the bonding region 110 of the target substrate 100. Furthermore, the electronic device 200 is welded by at least one electrode 220 to at least one pad 120 of the bonding area 110 of the target substrate 100 with pulsed laser light.

[0095] The pulsed laser light in this embodiment 5 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0096] Example 6

[0097] 6A-6B. The bonding process of the electronic device according to the present embodiment 6 is generally similar to that according to the embodiment 2, and the difference is that the present embodiment 6 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, or at least one electrode 220, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100. Furthermore, the electronic device 200 is welded by at least one electrode 220 to at least one pad 120 of the bonding area 110 of the target substrate 100 with pulsed laser light.

[0098] The pulsed laser light in this embodiment 6 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0099] Example 7

[0100] 7A to 7B. The bonding process of the electronic device according to this Example 7 is generally similar to that according to Example 3, with the difference being that in this Example 7, a transparent or semi-transparent dielectric layer 400 is further provided on the second upper surface 210A of the electronic device body 210. The pulsed laser light is irradiated onto the electronic device body 210 from above the electronic device 200 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, the solder 300, at least one electrode 220, or at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, the heated solder 300 ′ bonds at least one electrode 220 of the electronic device 200 to at least one pad 120 of the bonding area 110 of the target substrate 100 .

[0101] The pulsed laser light in this embodiment 7 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0102] Example 8

[0103] Please refer to FIGS. 8A to 8B. The bonding process of the electronic device according to the present embodiment 8 is generally similar to that according to the embodiment 4, and the difference is that the present embodiment 8 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. The pulsed laser light is irradiated to the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, the solder 300, or the at least one electrode 220. The solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, the heated solder 300' bonds at least one electrode 220 of the electronic device 200 to at least one pad 120 of the bonding region 110 of the target substrate 100.

[0104] The pulsed laser light in this embodiment 8 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0105] Example 9

[0106] First, refer to Fig. 9A. As shown in Fig. 9A, a target substrate 100, an electronic device 200, and a solder 300 are provided. The configurations of the target substrate 100, the electronic device 200, and the solder are the same as those described in Example 3, so no further description is given here.

[0107] Next, refer to FIG. 9B. As shown in FIG. 9B, a pulsed laser light is provided. The pulsed wavelength is, for example, but not limited to, 190 nm to 11000 nm. The pulsed laser light is directly irradiated onto the solder 300 from a lateral direction, and the solder 300 is directly heated by the pulsed laser light to obtain a heated solder 300'. At least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0108] The pulsed laser light in this embodiment 9 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0109] Example 10

[0110] First, refer to FIG. 10A. As shown in FIG. 10A, a target substrate 100 and an electronic device 200 are provided. The configuration of the target substrate 100 is similar to that described in the first embodiment, so no further description will be given here. The configuration of the electronic device 200 is generally similar to that described in the first embodiment, with the difference being that in this embodiment 10, the electronic device body 210 further has a through hole (not shown) penetrating the second upper surface 210A and the second lower surface 210B. A thermally conductive material 250 is embedded in this through hole (not shown). The thermally conductive material 250 is connected to at least one electrode 220 of the electronic device 200. Similarly, the electronic device 200 is aligned with the bonding region 110 of the target substrate 100, and the at least one electrode 220 is aligned with at least one pad 120 in the bonding region 110.

[0111] Next, refer to FIG. 10B. As shown in FIG. 10B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermally conductive material 250, inside the thermally conductive material 250, the lower surface (not shown) of the thermally conductive material 250, at least one electrode 220, or at least one pad 120, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100, and the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0112] The pulsed laser light in this embodiment 10 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0113] Example 11

[0114] First, refer to FIG. 11A. As shown in FIG. 11A, a target substrate 100 and an electronic device 200 are provided. The configuration of the electronic device 200 is similar to that described in Example 1, so no further description will be given here. The configuration of the target substrate 100 is generally similar to that described in Example 1, with the difference being that in this Example 11, the target substrate 100 further has a through hole (not shown) penetrating the first upper surface 100A and the first lower surface 100B. A thermally conductive material 150 is embedded in the through hole (not shown). The thermally conductive material 150 is connected to at least one pad 120 in the bonding region 110 of the target substrate 100. Similarly, the electronic device 200 is aligned with the bonding region 110 of the target substrate 100, and at least one electrode 220 is aligned with at least one pad 120 in the bonding region 110.

[0115] Next, refer to FIG. 11B. As shown in FIG. 11B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermal conductive material 150, in the thermal conductive material 150, the lower surface (not shown) of the thermal conductive material 150, at least one pad 120, or at least one electrode 220, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100, and the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0116] The pulsed laser light in this embodiment 11 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0117] Example 12

[0118] First, refer to FIG. 12A. As shown in FIG. 12A, a target substrate 100 and an electronic device 200 are provided. The configurations of the target substrate 100 and the electronic device 200 are similar to those described in the tenth embodiment, and therefore will not be described further here. Also, as shown in FIG. 12A, a solder 300 is further formed on at least one pad 120 and / or at least one electrode 220. The solder 300 indirectly contacts at least one electrode 220 of the electronic device 200 with at least one pad 120 of the target substrate 100.

[0119] Next, refer to FIG. 12B. As shown in FIG. 12B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermal conductive material 250, inside the thermal conductive material 250, the lower surface (not shown) of the thermal conductive material 250, at least one electrode 220, the solder 300, or at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, at least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0120] The pulsed laser light in this embodiment 12 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0121] Example 13

[0122] First, refer to FIG. 13A. As shown in FIG. 13A, a target substrate 100 and an electronic device 200 are provided. The configurations of the target substrate 100 and the electronic device 200 are similar to those described in Example 11, so they will not be further described here. Furthermore, as shown in FIG. 13A, a solder 300 is further formed on at least one pad 120 and / or at least one electrode 220. The solder 300 indirectly contacts at least one electrode 220 of the electronic device 200 and at least one pad 120 of the target substrate 100.

[0123] Next, refer to FIG. 13B. As shown in FIG. 13B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermal conductive material 150, inside the thermal conductive material 150, the lower surface (not shown) of the thermal conductive material 150, at least one pad 120, or at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, at least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0124] The pulsed laser light in this embodiment 13 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0125] Example 14

[0126] 14A to 14B, the bonding process of the electronic device according to the present embodiment 14 is generally similar to that of the embodiment 10, except that a transparent or semi-transparent dielectric layer 400 is further provided on the second upper surface 210A of the electronic device body 210 in the present embodiment 14. The pulsed laser light is irradiated onto the electronic device body 210 from above the electronic device 200 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is focused onto the upper surface (not shown) of the thermally conductive material 150, within the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100, and the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0127] The pulsed laser light in this embodiment 14 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0128] Example 15

[0129] 15A to 15B, the bonding process of the electronic device according to the present embodiment 15 is generally similar to that according to the embodiment 11, except that the present embodiment 15 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is focused on the upper surface (not shown) of the thermally conductive material 150, in the thermally conductive material 150, on the lower surface (not shown) of the thermally conductive material 150, on the at least one pad 120, or on the at least one electrode 220, to generate a eutectic layer (not shown) between the at least one electrode 220 of the electronic device 200 and the at least one pad 120 of the bonding region 110 of the target substrate 100, and the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the at least one electrode 220 with the pulsed laser light.

[0130] The pulsed laser light in this embodiment 15 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0131] Example 16

[0132] 16A to 16B. The bonding process of the electronic device according to this Example 16 is generally similar to that according to Example 12, with the difference being that in this Example 16, a transparent or semi-transparent dielectric layer 400 is further provided on the second upper surface 210A of the electronic device body 210. The pulsed laser light is irradiated from above the electronic device 200 toward the electronic device body 210 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermally conductive material 250, inside the thermally conductive material 250, the lower surface (not shown) of the thermally conductive material 250, at least one electrode 220, the solder 300, or the at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, the heated solder 300 ′ bonds at least one electrode 220 of the electronic device 200 to at least one pad 120 of the bonding area 110 of the target substrate 100 .

[0133] The pulsed laser light in this embodiment 16 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0134] Example 17

[0135] 17A-17B. The bonding process of the electronic device according to the present embodiment 17 is generally similar to that according to the embodiment 13, and the difference is that the present embodiment 17 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. The pulsed laser light is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent dielectric layer 400, and the pulsed laser light is concentrated on the upper surface (not shown) of the thermal conductive material 150, inside the thermal conductive material 150, the lower surface (not shown) of the thermal conductive material 150, at least one pad 120, or the at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, at least one electrode 220 of the electronic device 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0136] The pulsed laser light in this embodiment 17 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0137] Example 18

[0138] The method for transferring a large number of electronic devices according to the eighteenth embodiment will be described below with reference to FIGS. 18A to 18C.

[0139] First, as shown in FIG. 18A, a target substrate 100 is provided. The target substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A includes a plurality of bonding regions 110. Each of the bonding regions 110 includes at least one pad 120. Also, as shown in FIG. 18A, a temporary substrate 500 is provided above the target substrate 100. A plurality of electronic devices 200 are formed on the temporary substrate 500. Each of the electronic devices 200 includes an electronic device body 210 and at least one electrode 220. The electronic device body 210 has a second upper surface 210A and a second lower surface 210B facing each other. The at least one electrode 220 is formed on the second lower surface 210B of the electronic device body 210 and electrically connected to the electronic device body 210. The second bottom surface 210B of the electronic device body 210 faces the first top surface 100A of the target substrate 100. The electronic devices 200 are aligned to respective bonding regions 110 of the target substrate 100. At least one electrode 220 of each of the electronic devices 200 is aligned to at least one pad 120 of each of the bonding regions 110.

[0140] According to this embodiment, the target substrate 100 may be, for example, but is not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0141] According to this embodiment, the target substrate 100 will be described by taking a flexible printed wiring board as an example. The flexible printed wiring board may include a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit. The pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

[0142] According to this embodiment, the electronic device 200 is, for example, a light emitting diode, a laser diode, or a semiconductor element, but is not limited thereto. Here, the light emitted by the light emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, a processor, a memory IC, a micro element IC, a logic IC, or an analog IC, but is not limited thereto. The electronic device 200 of this embodiment 1 is described by taking a light emitting diode as an example.

[0143] According to this embodiment, the material of at least one electrode 220 of the electronic device 200 and / or at least one pad 120 of the bonding region 110, respectively, may be, for example, but is not limited to, a metal, a metal alloy, or a metal oxide.

[0144] Next, as shown in FIG. 18B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the temporary substrate 500 toward the temporary substrate 500 and the electronic device body 210, and the pulsed laser light is concentrated on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, at least one electrode 220 of each of the electronic devices 200, or at least one pad 120 of each of the bonding regions 110, to generate a eutectic layer (not shown) between the at least one electrode 220 of each of the electronic devices 200 and the at least one pad 120 of each of the bonding regions 110 of the target substrate 100, and each of the electronic devices 200 is welded to the at least one pad 120 of each of the bonding regions 110 of the target substrate 100 by the pulsed laser light through the at least one electrode 220.

[0145] After removing the temporary substrate 500, the electronic devices 200 are mass-transferred from the temporary substrate 500 to the bonding area 110 of the target substrate 100, as shown in Fig. 18C. The temporary substrate 500 is either photodecomposed or thermally decomposed and removed while a pulsed laser beam is irradiated from above the temporary substrate 500 toward the temporary substrate 500, or is directly peeled and removed after the at least one electrode 220 of each of the electronic devices 200 is bonded to the at least one pad 120 of each of the bonding areas 110 of the target substrate 100.

[0146] According to other embodiments of the present invention, the bonding methods of electronic devices according to the fifth, tenth, and fourteenth embodiments can be applied to the method of transferring a large number of electronic devices according to the present embodiment, if necessary. Each of the electronic devices 200 is welded to at least one pad 120 of each of the bonding regions 110 of the target substrate 100 by at least one electrode 220 with a pulsed laser beam.

[0147] The pulsed laser light in this embodiment 18 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0148] Example 19

[0149] A method for transferring a large number of electronic devices according to the present embodiment will be described below with reference to FIGS. 19A to 19C.

[0150] First, as shown in Fig. 19A, a target substrate 100 and a temporary substrate 500 as shown in Example 18 are provided. The configurations are similar to those described in Example 18, so no further description is given here. As shown in Fig. 19A, solder 300 is further formed on the pads 120 and / or electrodes 220. The solder 300 indirectly contacts at least one electrode 220 of each of the electronic devices 200 with at least one pad 120 of each of the bonding regions 110 of the target substrate 100.

[0151] Next, as shown in FIG. 19B, a pulsed laser light is provided. The wavelength of the pulsed laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The pulsed laser light is irradiated from above the temporary substrate 500 toward the temporary substrate 500 and the electronic device body 210, and the pulsed laser light is focused on the second upper surface 210A of the electronic device body 210, inside the electronic device body 210, the second lower surface 210B of the electronic device body 210, at least one electrode 220 of each of the electronic devices 200, the solder 300, or at least one pad 120 of each of the bonding regions 110, and the solder 300 is directly or indirectly heated by the pulsed laser light to obtain a heated solder 300'. Furthermore, the heated solder 300' bonds at least one electrode 220 of each of the electronic devices 200 to at least one pad 120 of each of the bonding regions 110 of the target substrate 100.

[0152] After removing the temporary substrate 500, the electronic devices 200 are mass-transferred from the temporary substrate 500 to the bonding area 110 of the target substrate 100, as shown in Fig. 19C. The temporary substrate 500 is either photodecomposed or thermally decomposed and removed while a pulsed laser beam is irradiated from above the temporary substrate 500 toward the temporary substrate 500, or is directly peeled and removed after at least one electrode 220 of each of the electronic devices 200 is bonded to at least one pad 120 of each of the bonding areas 110 of the target substrate 100.

[0153] According to other embodiments of the present invention, the bonding methods of electronic devices according to the seventh, twelfth, and sixteenth embodiments can be applied to the method of transferring a large number of electronic devices according to the present embodiment, if necessary. Each of the electronic devices 200 is welded to at least one pad 120 of each of the bonding regions 110 of the target substrate 100 by at least one electrode 220 with a pulsed laser beam.

[0154] The pulsed laser light in this embodiment 19 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0155] Example 20

[0156] The method for transferring a large number of electronic devices according to the twentieth embodiment will be described below with reference to FIGS. 20A to 20C.

[0157] First, as shown in Fig. 20A, a target substrate 100 and a temporary substrate 500 as shown in Example 18 are provided. The configurations thereof are similar to those described in Example 18, so no further description is given here.

[0158] Next, as shown in FIG. 20B, a first laser light is provided. This first laser light is a pulsed laser light. The wavelength of the first laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. This first laser light is irradiated toward the target substrate 100 from below the target substrate 100, and this first laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120 of each of the bonding regions 110, or at least one electrode 220 of each of the electronic devices 200, to generate a eutectic layer (not shown) between the at least one electrode 220 of each of the electronic devices 200 and the at least one pad 120 of each of the bonding regions 110 of the target substrate 100, and the electronic device 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the first laser light through the at least one electrode 220.

[0159] The pulsed laser light in this embodiment 20 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0160] Then, as shown in FIG. 20C, a second laser light is provided. The wavelength of the second laser light is, for example, but not limited to, 190 nm to 11000 nm. The second laser light is irradiated onto the temporary substrate 500 from above the temporary substrate 500, and the temporary substrate 500 is photodecomposed or thermally decomposed to remove it. Then, as shown in FIG. 20D, the electronic device 200 is transferred in a mass from the temporary substrate 500 to the bonding region 110 of the target substrate 100.

[0161] Also, according to another embodiment of the present invention, the temporary substrate 500 is directly peeled off and removed after at least one electrode 220 of each of the electronic devices 200 is bonded to at least one pad 120 of each of the bonding areas 110 of the target substrate 100.

[0162] According to other embodiments of the present invention, the bonding methods of electronic devices according to the sixth, eleventh, fifteenth, etc., can also be applied to the method of transferring a large amount of electronic devices according to this embodiment, if necessary. Each of the electronic devices 200 is welded to at least one pad 120 of each of the bonding regions 110 of the target substrate 100 by at least one electrode 220 with a pulsed laser beam.

[0163] Example 21

[0164] A method for transferring a large number of electronic devices according to the present embodiment will be described below with reference to FIGS. 21A to 21D.

[0165] First, as shown in Fig. 21A, a target substrate 100 and a temporary substrate 500 as shown in Example 18 are provided. The configurations are similar to those described in Example 18, and will not be described further here. As shown in Fig. 21A, solder 300 is further formed on the pads 120 and / or electrodes 220. The solder 300 indirectly contacts at least one electrode 220 of each of the electronic devices 200 and at least one pad 120 of each of the bonding regions 110 of the target substrate 100.

[0166] Next, as shown in FIG. 21B, a first laser light is provided. This first laser light is a pulsed laser light. The wavelength of the first laser light is, for example, 190 nm to 11000 nm, but is not limited thereto. The first laser light is irradiated toward the target substrate 100 from below the target substrate 100, and the first laser light is concentrated on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120 of each of the bonding regions 110, the solder 300, or at least one electrode 220 of each of the electronic devices 200, and the solder 300 is directly or indirectly heated by the first laser light to obtain a heated solder 300'. Furthermore, the heated solder 300' bonds at least one electrode 220 of each of the electronic devices 200 to at least one pad 120 of each of the bonding regions 110 of the target substrate 100.

[0167] The pulsed laser light in this embodiment 21 can be generated by a pulsed laser source. The pulsed laser source is, for example, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source, but is not limited thereto. The frequency of the pulsed laser light is, for example, 1 Hz to 1000 GHz, but is not limited thereto. The pulse width is, for example, 0.1 femtoseconds to 0.9 seconds, but is not limited thereto.

[0168] Then, as shown in FIG. 21C, a second laser light is provided. The wavelength of the second laser light is, for example, but not limited to, 190 nm to 11000 nm. The second laser light is irradiated onto the temporary substrate 500 from above the temporary substrate 500 to photodecompose or thermally decompose the temporary substrate 500 and remove it. As shown in FIG. 21D, the electronic device 200 is transferred in mass from the temporary substrate 500 to the bonding region 110 of the target substrate 100.

[0169] Also, according to another embodiment of the present invention, the temporary substrate 500 is directly peeled off and removed after at least one electrode 220 of each of the electronic devices 200 is bonded to at least one pad 120 of each of the bonding areas 110 of the target substrate 100.

[0170] According to another embodiment of the present invention, the bonding method of electronic devices according to the embodiments 8, 13, 17, etc. can also be applied to the method of transferring a large amount of electronic devices according to the present embodiment, if necessary. Each of the electronic devices 200 is welded to at least one pad 120 of each of the bonding regions 110 of the target substrate 100 by at least one electrode 220 with a pulsed laser beam.

[0171] In summary, according to the electronic device bonding method and mass electronic device transferring method of the present invention, a pulsed laser beam is used to laser weld the electronic device to the bonding pad in the bonding area of ​​the target substrate. Therefore, the high temperature time during laser welding is short, and the rates of heat generation and heat dissipation during laser welding can be balanced to keep the temperature of the bonding interface between the electronic device and the bonding pad in the bonding area of ​​the target substrate appropriate, thereby achieving high speed welding that does not damage the electronic device and the target substrate.

[0172] The present invention has been disclosed in the above examples, but they are not used to limit the present invention. Those skilled in the art can make various modifications and finishings without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is subject to those defined by the scope of the later-filed patent application. [Explanation of symbols]

[0173] 100 target board 100A 1st top surface 100B 1st bottom surface 110 Joint area 120 Pad 200 Electronic Devices 210 Electronic device body 210A 2nd top surface 210B 2nd bottom surface 220 electrode 150, 250 Thermal Conductive Material 300 Solder 300' heated solder 400 Transparent or semi-transparent dielectric layer 500 temporary board

Claims

1. A method for bonding electronic devices, comprising the steps of: providing a target substrate, the target substrate having opposing first upper and lower surfaces, the first upper surface including a bonding area, the bonding area including at least one pad; providing an electronic device comprising an electronic device body and at least one electrode, the electronic device body having opposing second upper and second lower surfaces, the at least one electrode being formed on the second lower surface of the electronic device body and electrically connected to the electronic device body, the electronic device being aligned to the bonding area of ​​the target substrate, and the at least one electrode being aligned to at least one pad in the bonding area; providing a pulsed laser light and causing the electronic device to be welded by the at least one electrode to at least one pad in a bonding area of ​​the target substrate with the pulsed laser light; 23. A method for bonding an electronic device, comprising the steps of:

2. 2. The method for bonding an electronic device according to claim 1, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

3. The flexible printed wiring board is A flexible insulating substrate; A circuit formed on a surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, the pad is formed on a surface of the insulating layer and is electrically connected to the circuit; The method for bonding an electronic device according to claim 2 .

4. The method for bonding an electronic device according to claim 1 , wherein the electronic device is selected from the group consisting of one or more of a light emitting diode, a laser diode, and a semiconductor element.

5. 5. The method for bonding electronic devices according to claim 4, wherein the light emitted by the light emitting diode is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

6. 5. The method for bonding electronic devices according to claim 4, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

7. 5. The method of claim 4, wherein the semiconductor element is selected from one or more of the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

8. The method for bonding electronic devices according to claim 1 , wherein the material of said at least one electrode and / or said at least one pad is a metal, a metal alloy or a metal oxide, respectively.

9. forming solder on the at least one pad and / or on the at least one electrode; bringing the at least one electrode of the electronic device and at least one electrode of the target substrate into indirect contact with the solder, heating the solder directly or indirectly with the pulsed laser light to obtain heated solder, and bonding the at least one electrode of the electronic device to at least one pad of the bonding area of ​​the target substrate with the heated solder. The method for bonding an electronic device according to claim 1 .

10. 2. The method of claim 1, wherein the pulsed laser light is generated by a pulsed laser source, the pulsed laser source being a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source.

11. 2. The method for bonding an electronic device according to claim 1, wherein the frequency of the pulsed laser light is from 1 Hz to 1000 GHz, and the pulse width of the pulsed laser light is from 0.1 femtoseconds to 0.9 seconds.

12. 2. The method for bonding an electronic device according to claim 1, wherein the pulsed laser light has a wavelength of 190 nm to 11,000 nm.

13. providing a transparent or semi-transparent dielectric layer on a second top surface of the electronic device body; The pulsed laser light is irradiated from above the electronic device toward a main body of the electronic device through the transparent or semi-transparent dielectric layer. The method for bonding an electronic device according to any one of claims 1 to 12.

14. providing a transparent or semi-transparent dielectric layer on a first lower surface of the target substrate; The pulsed laser light is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent medium layer. The method for bonding an electronic device according to any one of claims 1 to 12.

15. A method for transferring a large number of electronic devices, comprising: providing a target substrate having opposing first upper and lower surfaces, the first upper surface including a plurality of bonding regions; providing a temporary substrate above the target substrate, a plurality of electronic devices formed on the temporary substrate, each of the electronic devices including an electronic device body and at least one electrode, the electronic device body having opposing second upper and lower surfaces, the at least one electrode formed on the second lower surface of the electronic device body and electrically connected to the electronic device body, the second lower surface of the electronic device body facing the first upper surface of the target substrate, the electronic devices being respectively aligned to the bonding regions of the target substrate, and the at least one electrode of each of the electronic devices being aligned to the at least one pad of each of the bonding regions; providing a pulsed laser light and causing the electronic device to be welded by the at least one electrode to the at least one pad of the bonding area of ​​the target substrate with the pulsed laser light, respectively; A method for transferring a large number of electronic devices, comprising the steps of:

16. 16. The method for transferring a large number of electronic devices according to claim 15, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

17. The flexible printed wiring board is A flexible insulating substrate; A circuit formed on a surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, the pad is formed on a surface of the insulating layer and is electrically connected to the circuit; 17. The method for transferring large quantities of electronic devices according to claim 16.

18. 16. The method for transferring a large amount of electronic devices according to claim 15, wherein the electronic devices are selected from the group consisting of one or more of light emitting diodes, laser diodes, and semiconductor devices.

19. 20. The method for transferring a large number of electronic devices according to claim 18, wherein the light emitted by the light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

20. 20. The method for transferring a large amount of electronic devices according to claim 18, wherein the wavelength of the laser diode is between 390 nm and 1700 nm.

21. 20. The method of claim 18, wherein the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

22. The method for transferring a large number of electronic devices according to claim 15, wherein a material of the at least one electrode of the electronic device and / or the at least one pad of the bonding area, respectively, is a metal, a metal alloy or a metal oxide.

23. forming solder on the at least one pad of each of the bonding areas of the target substrate and / or on the at least one electrode of each of the electronic devices; bringing the at least one electrode of each of the electronic devices into indirect contact with the at least one pad of each of the bonding areas of the target substrate by the solder, heating the solder directly or indirectly with the pulsed laser light to obtain heated solder, and bonding the at least one electrode of each of the electronic devices to the at least one pad of each of the bonding areas of the target substrate by the heated solder.

16. The method for transferring large quantities of electronic devices according to claim 15.

24. 16. The method of claim 15, wherein the pulsed laser light is generated by a pulsed laser source, the pulsed laser source being a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source.

25. 16. The method for transferring a large number of electronic devices according to claim 15, wherein the frequency of the pulsed laser light is between 1 Hz and 1000 GHz, and the pulse width of the pulsed laser light is between 0.1 femtoseconds and 0.9 seconds.

26. 16. The method for transferring a large number of electronic devices according to claim 15, wherein the wavelength of the pulsed laser light is 190 nm to 11000 nm.

27. The temporary substrate is photodecomposed or thermally decomposed and removed while the pulsed laser light is irradiated from above the temporary substrate toward the temporary substrate, or the temporary substrate is directly peeled off and removed after at least one electrode of the electronic device is respectively bonded to the at least one pad of the bonding region of the target substrate.

16. The method for transferring large quantities of electronic devices according to claim 15.

28. providing a transparent or semi-transparent dielectric layer on the temporary substrate; The pulsed laser light is irradiated from above the electronic device through the transparent or semi-transparent dielectric layer onto the temporary substrate and the electronic device body, respectively. A method for transferring a large number of electronic devices according to any one of claims 15 to 27.

29. A method for transferring a large number of electronic devices, comprising: providing a target substrate having opposing first upper and lower surfaces, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, on which a plurality of electronic devices are formed, each of the electronic devices including an electronic device body and at least one electrode, the electronic device body having opposing second upper and lower surfaces, the at least one electrode being formed on the second lower surface of the electronic device body and electrically connected to the electronic device body, the second lower surface of the electronic device body facing the first upper surface of the target substrate, the electronic devices being respectively aligned to the bonding regions of the target substrate, and the at least one electrode of each of the electronic devices being aligned to the at least one pad of each of the bonding regions; providing a first laser light, and causing the electronic device to be welded by the at least one electrode to at least one pad of the bonding area of ​​the target substrate with the first laser light, respectively, the first laser light being a pulsed laser light; A method for transferring a large number of electronic devices, comprising the steps of:

30. 30. The method of claim 29, wherein the target substrate is a semiconductor target substrate, a ceramic target substrate, a metal target substrate, a glass target substrate, a printed wiring board, or a flexible printed wiring board.

31. The flexible printed wiring board is A flexible insulating substrate; A circuit formed on a surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, the pad is formed on a surface of the insulating layer and is electrically connected to the circuit; 31. The method of claim 30, wherein the electronic device is transported in a large quantity.

32. 30. The method of claim 29, wherein the electronic devices are selected from one or more of the group consisting of light emitting diodes, laser diodes, and semiconductor devices.

33. 33. The method for transferring a large number of electronic devices according to claim 32, wherein the light emitted by the light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

34. 33. The method for transferring a large amount of electronic devices according to claim 32, wherein the wavelength of the laser diode is between 390 nm and 1700 nm.

35. 33. The method of claim 32, wherein the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

36. 30. The method for transferring a large number of electronic devices according to claim 29, wherein a material of the at least one electrode of the electronic device and / or the at least one pad of the bonding area, respectively, is a metal, a metal alloy or a metal oxide.

37. forming solder on the at least one pad of each of the bonding areas of the target substrate and / or on the at least one electrode of each of the electronic devices; bringing the at least one electrode of each of the electronic devices into indirect contact with the at least one pad of each of the bonding regions of the target substrate by the solder, heating the solder directly or indirectly with the first laser light to obtain heated solder, and bonding the at least one electrode of each of the electronic devices to the at least one pad of each of the bonding regions of the target substrate by the heated solder.

30. The method for transporting large quantities of electronic devices according to claim 29.

38. After each of the electronic devices is bonded to the at least one pad of each of the bonding regions of the target substrate by the at least one electrode, the temporary substrate is irradiated with a second laser beam from above the temporary substrate to photodecompose or thermally decompose the temporary substrate and removed, or the temporary substrate is directly peeled off and removed.

30. The method for transporting large quantities of electronic devices according to claim 29.

39. 30. The method of claim 29, wherein the first laser light is generated by a pulsed laser source, the pulsed laser source being a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid-state laser source, a pulsed semiconductor laser source, or a pulsed optical fiber laser source.

40. 30. The method for transferring a large number of electronic devices according to claim 29, wherein the frequency of the first laser light is between 1 Hz and 1000 GHz, and the pulse width of the first laser light is between 0.1 femtoseconds and 0.9 seconds.

41. 30. The method for transferring a large number of electronic devices according to claim 29, wherein the wavelength of the first laser light is between 190 nm and 11000 nm.

42. 39. The method for transferring a large number of electronic devices according to claim 38, wherein the wavelength of the second laser light is between 190 nm and 11000 nm.

43. providing a transparent or semi-transparent dielectric layer on a first lower surface of the target substrate; The method for transferring a large number of electronic devices according to any one of claims 29 to 42, wherein the first laser light is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent dielectric layer.

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