Measurement method and peeling method and peeling strength measurement device

Abstract

To easily peel a semiconductor chip from a substrate.SOLUTION: A measurement method according to one embodiment of the present invention, which measures joint strength, while peeling a semiconductor chip (3) jointed to a main surface (2a) of a substrate (2), using a blade (4) having a first tool part (5) having a blade angle that is a first acute angle (5b) and a second tool part (6) provided on the first tool part, includes steps of: inserting the first tool part along the main surface, toward a chamfered outer peripheral end part (3a) of the semiconductor chip; contacting the second tool part provided on the first tool part, with the first tool part inserted into the outer peripheral end part of the semiconductor chip, and peeling the semiconductor chip from the substrate by making force act, in a separating direction from the substrate, on the semiconductor chip; and measuring joint strength between the substrate and the semiconductor chip, on the basis of a length from a contact point (CP2) where the first tool part or the second tool part contacts the semiconductor chip to a point where the semiconductor chip is peeled from the substrate.SELECTED DRAWING: Figure 6C

Description

[Technical field]

[0001] The present invention relates to a measurement method, a peeling method, and a peel strength measuring device. [Background technology]

[0002] A method is known in which a blade is inserted into the bonding surface of two bonded substrates to peel the substrates and measure the bonding strength based on the peeled length. For example, Patent Document 1 discloses that the bonding strength of the substrates is evaluated by such a blade insertion method. Specifically, the bonding strength of the substrates can be evaluated from values ​​such as the length of the crack between the substrates caused by peeling the substrates, the thickness of the blade, and the thickness of each of the two substrates. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 4348454 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when using the blade insertion method with a single-edged blade to bond the bonding surfaces of two such substrates, there are cases where the substrates are difficult to peel apart, such as when the bond between the substrates is strong or when the substrates try to rebond even after being peeled apart.

[0005] The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a measurement method, a peeling method, and a peel strength measuring apparatus that make it possible to easily peel a semiconductor chip from a substrate. [Means for solving the problem]

[0006] A measurement method according to one embodiment of the present invention is a measurement method for measuring bonding strength by peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool part having a blade angle that is a first acute angle and a second tool part provided on the first tool part, the measurement method including: inserting the first tool part along the main surface toward a chamfered outer peripheral edge of the semiconductor chip; with the first tool part inserted into the outer peripheral edge, bringing the second tool part provided on the first tool part into contact with the outer peripheral edge of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate; and measuring the bonding strength between the substrate and the semiconductor chip based on the length from the contact point where the first tool part or the second tool part contacts the semiconductor chip to the point where the semiconductor chip and the substrate are peeled off.

[0007] According to this aspect, the first tool part is inserted along the main surface of the semiconductor chip bonded to the main surface of the substrate toward the chamfered outer peripheral edge of the semiconductor chip, and the second tool part provided on the first tool part is brought into contact with the outer peripheral edge of the semiconductor chip to apply a force to the semiconductor chip in a direction away from the substrate. That is, the first tool part having a blade angle that easily enters the bonding surface and the second tool part that applies a force to the semiconductor chip in a direction away from the substrate are used to peel the semiconductor chip bonded to the substrate and having a chamfered outer peripheral edge. As a result, the semiconductor chip can be easily peeled off from the substrate. Therefore, the bonding strength between the semiconductor chip and the substrate can be easily measured.

[0008] A peeling method according to one embodiment of the present invention is a peeling method for peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool part with a blade angle that is a first acute angle and a second tool part provided on the first tool part, the peeling method including: inserting the first tool part along the main surface toward a chamfered outer peripheral edge of the semiconductor chip; and, with the first tool part inserted into the outer peripheral edge, bringing the second tool part provided on the first tool part into contact with the outer peripheral edge of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate.

[0009] According to this aspect, for a semiconductor chip bonded to a main surface of a substrate, a first tool part is inserted along the main surface toward the chamfered outer peripheral edge of the semiconductor chip, and a second tool part provided on the first tool part is brought into contact with the outer peripheral edge of the semiconductor chip to apply a force to the semiconductor chip in a direction away from the substrate. That is, for a semiconductor chip bonded to a substrate and having a chamfered outer peripheral edge, a first tool part having a blade angle that easily enters the bonding surface and a second tool part that applies a force to the semiconductor chip in a direction away from the substrate are used to perform peeling. As a result, it becomes possible to easily peel the semiconductor chip from the substrate.

[0010] A peel strength measuring device according to one aspect of the present invention comprises: A peeling device for peeling off a semiconductor chip bonded to a main surface of a substrate, the device comprising a blade having a first tool portion having a blade angle that is a first acute angle and a second tool portion provided on the first tool portion, the second tool portion contacting the outer peripheral end of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate with the first tool portion inserted along the main surface toward the chamfered outer peripheral end of the semiconductor chip, and the second tool portion having a measuring portion for measuring the bonding strength between the substrate and the semiconductor chip based on the length from the contact point where the first tool portion or the second tool portion contacts the semiconductor chip to the point where the semiconductor chip is peeled off from the substrate.

[0011] According to this aspect, a semiconductor chip bonded to a substrate and having a chamfered outer peripheral edge is peeled off using a first tool part having a blade angle that easily penetrates the bonding surface, and a second tool part that applies a force in a direction to move the semiconductor chip away from the substrate. By using a peeling device equipped with such a blade, it becomes possible to easily peel the semiconductor chip from the substrate. Therefore, the bonding strength between the two can be easily measured. Effect of the Invention

[0012] According to the present invention, it is possible to provide a measuring method, a peeling method, and a peel strength measuring device that enable a semiconductor chip to be easily peeled off from a substrate. [Brief description of the drawings]

[0013] [Figure 1] 1 is a cross-sectional view showing an example of a semiconductor module to which the measurement method according to the first embodiment can be applied. [Diagram 2] FIG. 2 is a block diagram showing an example of a bonding strength measuring device used in the measuring method according to the first embodiment. [Diagram 3] FIG. 2 is a perspective view showing an example of a blade used in the measuring method according to the first embodiment. [Figure 4] 4 is a flowchart showing a measurement method according to the first embodiment. [Diagram 5] FIG. 4 is a diagram showing an example when the measurement method according to the first embodiment is performed. [Figure 6A] 4A to 4C are cross-sectional views showing an example of a measuring method according to the first embodiment in progress. [Figure 6B] 4A to 4C are cross-sectional views showing an example of a measuring method according to the first embodiment in progress. [Figure 6C] 4A to 4C are cross-sectional views showing an example of a measuring method according to the first embodiment in progress. [Figure 7] 6 is a cross-sectional view showing another example of the measuring method according to the first embodiment in progress. FIG. [Figure 8A] FIG. 11 is a cross-sectional view showing an example of a measuring method according to a second embodiment in progress. [Figure 8B] FIG. 11 is a cross-sectional view showing an example of a measuring method according to a second embodiment in progress. [Figure 8C] FIG. 11 is a cross-sectional view showing an example of a measuring method according to a second embodiment in progress. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings of each embodiment are merely examples, and the dimensions and shapes of each part are schematic, and the technical scope of the present invention should not be interpreted as being limited to each of the embodiments.

[0015] First Embodiment 1, for the purpose of explaining the relative directional relationships, the right direction on the paper will be called the X-axis positive direction, the back direction on the paper will be called the Y-axis positive direction, and the top direction on the paper will be called the Z-axis positive direction. The left direction on the paper will be called the X-axis negative direction, the front direction on the paper will be called the Y-axis negative direction, and the bottom direction on the paper will be called the Z-axis negative direction.

[0016] FIG. 1 is a cross-sectional view showing an example of a semiconductor module to which the measurement method according to the first embodiment can be applied. The semiconductor module 1 includes a semiconductor wafer 2 and a semiconductor chip 3. The outer peripheral end 3a of the semiconductor chip 3 is chamfered. The outer peripheral end 3a may be chamfered, for example, so as to have an inclined surface 3b with respect to the main surface 2a of the semiconductor wafer 2. One surface of the semiconductor chip 3 may be bonded to the main surface 2a of the semiconductor wafer 2 by electrostatic force. In the following description, the semiconductor wafer 2 is taken as an example of a substrate to which the measurement method according to the first embodiment can be applied, but the substrate may be made of various metals, alloys, glass, ceramics, resin, or the like.

[0017] <Peel strength measuring device used in the measuring method according to the first embodiment> Fig. 2 is a diagram showing an example of a peel strength measuring device used in the measurement method according to the first embodiment. The peel strength measuring device according to the first embodiment includes a blade 4 for peeling a semiconductor chip 3 from a semiconductor wafer 2, and a measuring unit 7 for measuring the bonding strength between the semiconductor wafer 2 and the semiconductor chip 3. Steps S1 to S5 shown in Fig. 4, which will be described later, are taken as an example performed using the peel strength measuring device according to the first embodiment. The measuring unit 7 may be, for example, a measuring device including an edge sensor, a surface potential measuring sensor, etc.

[0018] FIG. 3 is a perspective view showing an example of a blade used in the measuring method according to the first embodiment. The blade 4 includes a first tool part 5 and a second tool part 6. The blade 4 has, for example, a first tool part 5 having a first blade surface 5a and a second tool part 6 having a second blade surface 6a provided thereon. The width direction length of the second tool part 6 may be greater than the width direction length of the first tool part 5, and the first and second tool parts 5, 6 may be provided with their relative positions fixed. With such a configuration, it is possible to enhance the effect of preventing the first and second tool parts 5, 6 from buckling with each other. In addition, the first and second tool parts 5, 6 may be configured to be movable relative to each other, as described later.

[0019] Fig. 4 is a flowchart showing the measurement method according to the first embodiment. The measurement method according to the first embodiment proceeds along steps S1 to S5. The flowchart will be described below with reference to Figs. 4, 5, and 6A to 6C as appropriate.

[0020] 5 is a diagram showing an example of performing the measurement method according to the first embodiment. A blade 4 is inserted into a semiconductor module 1 in an insertion direction (positive direction of the X-axis). The length in the width direction (positive direction of the Y-axis) of each of the first tool part 5 and the second tool part 6 may be greater than the length in the width direction (positive direction of the Y-axis) of the chamfered outer peripheral end part 3a of the semiconductor chip 3, i.e., the length in the width direction of the inclined surface 3b. With this configuration, peeling is performed with a small contact area and overall line contact with the width direction (positive direction of the Y-axis) of the inclined surface 3b of the semiconductor chip 3, so that peeling can be performed with little friction.

[0021] 6A is a cross-sectional view showing an example of the measurement method according to the first embodiment in progress. A blade 4 is inserted toward the chamfered outer peripheral end 3a of a semiconductor chip 3. That is, a first tool part 5 having a blade angle of a first acute angle 5b is inserted in the positive direction of the X-axis along the main surface 2a toward the inclined surface 3b.

[0022] The cutting angle of the first acute angle 5b of the first tool part 5 is set to be smaller than the angle 3c that the inclined surface 3b of the semiconductor chip 3 forms with the main surface 2a. The cutting angle of the second acute angle 6b of the second tool part 6 is set to be larger than the cutting angle of the first acute angle 5b. By adopting such an angle relationship, the first tool part 5 can more easily enter between the semiconductor chip 3 and the semiconductor wafer 2, and the second tool part 6 can more easily apply a force to the semiconductor chip 3 in a direction away from the semiconductor wafer 2. Note that the combination of the first acute angle 5b, the second acute angle 6b, and the formed angle 3c shown in FIG. 6A is one example, and other combinations of the relative magnitudes of these angles may be adopted.

[0023] In step S1, the first tool part 5 is inserted. As shown in Fig. 6B, the first tool part 5 is inserted into the outer peripheral end part 3a of the semiconductor chip 3. At this time, the first blade surface 5a of the first tool part 5 may come into contact with the inclined surface 3b of the semiconductor chip 3.

[0024] 6B is a cross-sectional view showing an example of the measurement method according to the first embodiment in progress. With the first tool part 5 inserted into the outer peripheral end 3a, the first blade surface 5a of the first tool part 5 comes into contact with the inclined surface 3b of the semiconductor chip 3 at a contact point CP1, and makes line contact along the positive direction of the Y axis. At this time, a peeling force PF1 acts in a direction perpendicular to the first blade surface 5a of the first tool part 5 (a direction between the positive direction of the X axis and the positive direction of the Z axis), peeling the semiconductor chip 3 from the main surface 2a of the semiconductor wafer 2. The state in which the first tool part 5 is inserted into the outer peripheral end 3a includes a state in which the first blade surface 5a and the outer peripheral end 3a overlap each other in a plan view (not shown), and includes a state in which the first tool part 5 is in contact with the semiconductor chip 3.

[0025] In step S2, the second tool part 6 is brought into contact with the inclined surface 3b of the semiconductor chip 3, as shown in FIG 6C.

[0026] FIG. 6C is a cross-sectional view showing an example of the measurement method according to the first embodiment in the middle of execution. With the first tool part 5 inserted into the outer peripheral end 3a, the second blade surface 6a of the second tool part 6 comes into contact with the inclined surface 3b of the semiconductor chip 3 at the contact point CP2, and makes line contact along the positive direction of the Y axis. At this time, a peeling force PF2 acts in a direction perpendicular to the second blade surface 6a of the second tool part 6 (a direction between the positive direction of the X axis and the positive direction of the Z axis), peeling the semiconductor chip 3 from the main surface 2a of the semiconductor wafer 2. Thereafter, the blade 4 is advanced in the positive direction of the X axis, so that the semiconductor chip 3 is gradually peeled off from the main surface 2a of the semiconductor wafer 2. The state in which the first tool part 5 is inserted into the outer peripheral end 3a refers to a state in which the first blade surface 5a and the outer peripheral end 3a overlap in a plan view (not shown), and also includes a state in which the first tool part 5 is not in contact with the semiconductor chip 3.

[0027] In step S3, the semiconductor chip 3 is peeled off. In Fig. 6C, the blade 4 is advanced in the positive direction of the X-axis, so that the semiconductor chip 3 is gradually peeled off from the main surface 2a of the semiconductor wafer 2. For example, the blade 4 is brought into contact with the semiconductor chip 3 and advanced in the positive direction of the X-axis a predetermined distance, so that the semiconductor chip 3 is peeled off from the main surface 2a of the semiconductor wafer 2.

[0028] In step S4, the peeling length is measured. For example, the blade 4 is brought into contact with the semiconductor chip 3 and advanced a predetermined distance in the positive direction of the X-axis, and the length from the contact point between the blade 4 and the semiconductor chip 3 to the point where the semiconductor chip 3 is peeled off from the semiconductor wafer 2 is measured.

[0029] In step S5, the bonding strength is measured. For example, the bonding strength is calculated using the thickness of the blade 4, the thickness of the semiconductor wafer 2, the thickness of the semiconductor chip 3, and the peel length measured in step S4, and the measured value is used as the bonding strength. The bonding strength may be measured using the measuring unit 7.

[0030] The bonding strength between the semiconductor chip 3 and the semiconductor wafer 2 can be evaluated using the bond energy of the bonding surface. The bond energy can be calculated by the following formula.

number

[0031] According to the above embodiment, the cutting angle of the first acute angle 5b of the first tool part 5 is set to be smaller than the angle between the inclined surface 3b of the semiconductor chip 3 and the main surface 2a, thereby reducing the contact area between the first tool part 5 and the semiconductor chip 3, thereby reducing the frictional force and facilitating the advancement. In addition, the cutting angle of the second acute angle 6b of the second tool part 6 is set to be larger than the cutting angle of the first acute angle 5b, thereby acting on the semiconductor chip 3 in a direction away from the semiconductor wafer 2. By using the blade 4 having such a first tool part 5 and second tool part 6, it becomes possible to easily peel off the chamfered semiconductor chip 3 from the semiconductor wafer 2.

[0032] 7 is a cross-sectional view showing another example of the measurement method according to the first embodiment in progress. The first tool unit 5 may be configured to be movable relative to the second tool unit 6. In the example shown in FIG. 7, the first tool unit 5 moves relative to the second tool unit 6, in other words, the first tool unit 5 is relatively displaced from the initial position via the gap Gsa. With this configuration, the first tool unit 5 is inserted while the height from the main surface 2a of the semiconductor wafer 2 to the contact point CP3 is kept constant, making it possible to perform peeling while suppressing warpage of the semiconductor chip 3.

[0033] <Second embodiment> The measurement method according to the second embodiment differs from the measurement method according to the first embodiment in that the chamfering depth for the outer peripheral end 30a of the semiconductor chip 30 is longer in the positive direction of the X-axis. In other words, unlike the first embodiment, the second tool part 6 comes into contact with the outer peripheral end 3a of the semiconductor chip 3 before the first tool part 5 comes into contact with the outer peripheral end 3a of the semiconductor chip 3. In the following description of the measurement method according to the second embodiment, the same content as the measurement method according to the first embodiment will not be described.

[0034] 8A is a cross-sectional view showing an example of the measurement method according to the second embodiment in the middle of execution. With the first tool part 50 inserted into the outer peripheral end part 30a, the second blade surface 60a of the second tool part 60 contacts the inclined surface 30b of the semiconductor chip 30 at the contact point CP10, and makes line contact along the positive direction of the Y axis. In the measurement method according to the second embodiment, the blade 40 is advanced in the positive direction of the X axis along the main surface 20a, so that the second tool part 60 first contacts the inclined surface 30b.

[0035] FIG. 8B is a cross-sectional view showing an example of the measurement method according to the second embodiment in the middle of execution. In FIG. 8B, the peeling force by the blade 40 is insufficient, and the semiconductor chip 30 remains bonded to the main surface 20a of the semiconductor wafer 20. At this time, in a state where the first tool part 50 is inserted into the outer peripheral end part 30a, the first blade surface 50a of the first tool part 50 contacts the inclined surface 30b of the semiconductor chip 30 at the contact point CP20 and makes line contact along the positive direction of the Y axis. In addition, the second blade surface 60a of the second tool part 60 contacts the inclined surface 30b of the semiconductor chip 30 at the contact point CP30 and makes line contact along the positive direction of the Y axis. With this configuration, the first tool part 50 and the second tool part 60 can peel the semiconductor chip 30 from the main surface 20a of the semiconductor wafer 20 by applying peeling forces PF20 and PF30 to the semiconductor chip 30 at the contact point CP20 and the contact point CP30, respectively.

[0036] 8C is a cross-sectional view showing an example of the measurement method according to the second embodiment in the middle of execution. With the first tool part 50 inserted into the outer peripheral end part 30a, the second blade surface 60a of the second tool part 60 comes into contact with the inclined surface 30b of the semiconductor chip 30 at the contact point CP40, and makes line contact along the positive direction of the Y axis. A peeling force PF40 acts in a direction perpendicular to the second blade surface 60a (a direction between the positive directions of the X axis and the positive directions of the Z axis), peeling the semiconductor chip 30 from the main surface 20a of the semiconductor wafer 20. Thereafter, the blade 40 is advanced in the positive direction of the X axis, so that the semiconductor chip 30 is gradually peeled off from the main surface 20a of the semiconductor wafer 20.

[0037] According to the above embodiment, even if the chamfering depth is long in the positive direction of the X-axis and the peeling force of the blade 40 is insufficient, the second tool part 60 having a blade angle of the second acute angle 60b set to be larger than the blade angle of the first acute angle 50b is used to act on the semiconductor chip 30 in a direction away from the semiconductor wafer 20. Furthermore, by using the first tool part 50 having a blade angle of the first acute angle 50b set to be smaller than the angle formed by the inclined surface 30b of the semiconductor chip 30 and the main surface 20a, the contact area between the first tool part 50 and the semiconductor chip 30 is reduced, and the first tool part 50 is advanced with reduced frictional force, so that the semiconductor chip 30 can be easily peeled off from the semiconductor wafer 20.

[0038] The measuring methods according to the first and second embodiments have been described above. A peeling method according to an embodiment of the present invention will be described with reference to Figs. 1 to 6C which are related to the measuring method according to the first embodiment.

[0039] <An example of a peeling method according to an embodiment of the present invention> As an example of the peeling method according to the embodiment of the present invention, the semiconductor module 1 and the blade 4 shown in Fig. 1 and Fig. 3 may be used. In the example of the peeling method according to the embodiment of the present invention, steps S1 to S3 shown in Fig. 4 are performed in this order, as in the measurement method according to the first embodiment. Since steps S1 to S2 are the same as those in the measurement method according to the first embodiment, their explanations will be omitted. In the example of the peeling method according to the embodiment of the present invention, the blade 4 shown in Fig. 6C may be advanced in the positive direction of the X-axis to completely peel off the semiconductor chip 3 from the main surface 2a of the semiconductor wafer 2.

[0040] The above-described embodiments are intended to facilitate understanding of the present invention, and are not intended to limit the present invention. The present invention may be modified / improved without departing from the spirit thereof, and equivalents are also included in the present invention. That is, those in which a person skilled in the art appropriately adds design changes to each embodiment are also included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the elements and their arrangements, materials, conditions, shapes, sizes, etc. of each embodiment are not limited to those exemplified, and can be appropriately changed. In addition, the elements of each embodiment can be combined to the extent technically possible, and those combinations of these are also included in the scope of the present invention as long as they include the characteristics of the present invention.

[0041] (Appendix 1) The measurement method of this embodiment is a measurement method for measuring bonding strength by peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool part having a blade angle that is a first acute angle and a second tool part provided on the first tool part, the measurement method including: inserting the first tool part along the main surface toward the chamfered outer peripheral edge of the semiconductor chip; with the first tool part inserted into the outer peripheral edge, bringing the second tool part provided on the first tool part into contact with the outer peripheral edge of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate; and measuring the bonding strength between the substrate and the semiconductor chip based on the length from the contact point where the first tool part or the second tool part contacts the semiconductor chip to the point where the semiconductor chip and the substrate are peeled off.

[0042] (Appendix 2) In the measurement method described in Supplementary Note 1 above, the outer peripheral edge is chamfered to form an inclined surface.

[0043] (Appendix 3) The measuring method according to any one of Supplementary Note 1 or Supplementary Note 2, wherein the second tool part has a cutting edge angle that is a second acute angle.

[0044] (Appendix 4) In the measuring method according to any one of Supplementary Note 1 to Supplementary Note 3, the angle of the first acute angle of the first tool part is smaller than the angle of the second acute angle of the second tool part.

[0045] (Appendix 5) In the measuring method according to any one of Supplementary Note 1 to Supplementary Note 4, the first acute angle of the first tool part is smaller than the angle between the inclined surface and the main surface.

[0046] (Appendix 6) In the measurement method described in any one of Supplementary Note 1 to Supplementary Note 5 above, inserting the first tool part along the main surface includes contacting the first tool part with the outer circumferential end part before the second tool part.

[0047] (Appendix 7) In the measurement method described in any one of Supplementary Notes 1 to 6 above, inserting the first tool part along the main surface includes contacting the second tool part with the outer circumferential end part before the first tool part.

[0048] (Appendix 8) In the measuring method according to any one of Supplementary Note 1 to Supplementary Note 7, inserting the first tool part along the main surface includes moving the first tool part relative to the second tool part.

[0049] (Appendix 9) In the measurement method described in any one of Supplementary Notes 1 to 8 above, inserting the first tool part along the main surface includes moving the first tool part and the second tool part while fixing their relative positions to each other.

[0050] (Appendix 10) In the measuring method described in any one of Supplementary Notes 1 to 9, the widthwise length of each of the first tool part and the second tool part is greater than the widthwise length of the chamfered outer peripheral end part of the semiconductor chip.

[0051] (Appendix 11) In the measuring method according to any one of Supplementary Note 1 to Supplementary Note 10, the substrate is a semiconductor wafer.

[0052] (Appendix 12) In the measuring method according to any one of Supplementary Note 1 to Supplementary Note 11, the measuring method includes peeling off the semiconductor chip electrostatically bonded to the main surface of the substrate.

[0053] (Appendix 13) The peeling method of this embodiment is a method for peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool part with a blade angle that is a first acute angle and a second tool part provided on the first tool part, and includes inserting the first tool part along the main surface toward the chamfered outer peripheral edge of the semiconductor chip, and with the first tool part inserted into the outer peripheral edge, bringing the second tool part provided on the first tool part into contact with the outer peripheral edge of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate.

[0054] (Appendix 14) The peel strength measuring device of this embodiment is a peeling device that peels off a semiconductor chip bonded to a main surface of a substrate, and is equipped with a blade having a first tool portion having a blade angle that is a first acute angle and a second tool portion provided on the first tool portion, and the second tool portion has a measuring portion that, with the first tool portion inserted along the main surface toward the chamfered outer peripheral end of the semiconductor chip, contacts the outer peripheral end of the semiconductor chip and applies a force to the semiconductor chip in a direction away from the substrate, and measures the bonding strength between the substrate and the semiconductor chip based on the length from the contact point where the first tool portion or the second tool portion contacts the semiconductor chip to the point where the semiconductor chip is peeled off from the substrate. [Explanation of symbols]

[0055] 1,10...Semiconductor module 2,20...Semiconductor wafer 2a, 20a…main surface 3,30…Semiconductor chips 3a, 30a...Outer edge 3b,30b…Slanted surface 3c…Angle 4,40…Blade 5,50…First tool section 5a,50a…1st blade surface 5b…First acute angle 6,60…Second tool section 6a, 60a…Second cutting edge 6b...Second acute angle 7...Measuring part CP1~CP3,CP10~CP40...Contact points PF1~PF3, PF10~PF40...Peeling force

Claims

1. 1. A method for measuring bonding strength by peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool portion having a blade angle that is a first acute angle and a second tool portion provided on the first tool portion, comprising: inserting the first tool part along the main surface toward the chamfered outer peripheral edge of the semiconductor chip; With the first tool part inserted into the outer peripheral end, the second tool part provided on the first tool part is brought into contact with the outer peripheral end of the semiconductor chip, and a force is applied to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate; and measuring a bonding strength between the substrate and the semiconductor chip based on a length from a contact point where the first tool part or the second tool part contacts the semiconductor chip to a point where the semiconductor chip is peeled off from the substrate. Measurement method.

2. The measuring method according to claim 1 , wherein the outer peripheral edge is chamfered to have an inclined surface.

3. The method of claim 2 , wherein the second tool part has an edge angle that is a second acute angle.

4. The method of claim 3 , wherein the angle of the first acute angle of the first tool part is smaller than the angle of the second acute angle of the second tool part.

5. The measuring method according to claim 3 , wherein the first acute angle of the first tool part is smaller than an angle between the inclined surface and the main surface.

6. The measurement method according to claim 1 , wherein inserting the first tool part along the main surface includes contacting the first tool part with the outer circumferential end part before the second tool part contacts the outer circumferential end part.

7. The measurement method according to claim 1 , wherein inserting the first tool part along the main surface includes contacting the second tool part with the outer circumferential end part before the first tool part contacts the outer circumferential end part.

8. The method of claim 1 , wherein inserting the first tool part along the major surface comprises moving the first tool part relative to the second tool part.

9. The measurement method according to claim 1 , wherein inserting the first tool part along the main surface includes moving the first tool part and the second tool part while fixing their relative positions to each other.

10. The measuring method according to claim 1 , wherein the widthwise length of each of the first tool part and the second tool part is greater than the widthwise length of the chamfered outer circumferential end part of the semiconductor chip.

11. The measurement method according to claim 1 , wherein the substrate is a semiconductor wafer.

12. The measuring method according to claim 1 , further comprising: peeling off the semiconductor chip that is electrostatically bonded to the main surface of the substrate.

13. 1. A peeling method for peeling a semiconductor chip bonded to a main surface of a substrate using a blade having a first tool portion having a blade angle that is a first acute angle and a second tool portion provided on the first tool portion, comprising: inserting the first tool part along the main surface toward the chamfered outer peripheral edge of the semiconductor chip; and while the first tool part is inserted into the outer peripheral end, the second tool part provided on the first tool part is brought into contact with the outer peripheral end of the semiconductor chip, and a force is applied to the semiconductor chip in a direction away from the substrate, thereby peeling the semiconductor chip from the substrate; The peeling method includes the steps of:

14. A peeling apparatus for peeling off a semiconductor chip bonded to a main surface of a substrate, comprising: a blade having a first tool portion having a cutting edge angle that is a first acute angle and a second tool portion disposed on the first tool portion; a measuring unit for measuring a bonding strength between the substrate and the semiconductor chip; Equipped with The second tool part is a second tool part contacting the outer peripheral edge of the semiconductor chip and applying a force to the semiconductor chip in a direction away from the substrate while the first tool part is inserted along the main surface toward the chamfered outer peripheral edge of the semiconductor chip; The measurement unit includes: measuring a bonding strength between the substrate and the semiconductor chip based on a length from a contact point where the first tool part or the second tool part contacts the semiconductor chip to a point where the semiconductor chip is peeled off from the substrate; Peel strength measuring device.

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