Semiconductor photodetector

Abstract

Described herein is a device comprising: a detector surface for supporting a biological or chemical sample; an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes; and doped regions formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and the doped areas of the array of doped areas, the doped regions being configured to influence the direction of travel of electrons generated in the doped regions as a result of photon absorption.

Description

[Technical field]

[0001] (CROSS REFERENCE TO RELATED APPLICATIONS) This application claims priority to U.S. patent application Ser. No. 63 / 239,874, entitled "Semiconductor Light Reception," filed Sep. 1, 2021, the entire contents of which are incorporated herein by reference in their entirety. [Background technology]

[0002] Various protocols in biological or chemical research involve conducting controlled reactions. The specified reactions can then be observed or detected, and subsequent analysis can help identify or characterize the chemicals involved in the reactions.

[0003] In some multiplex assays, an unknown analyte bearing an identifiable label (e.g., a fluorescent label) can be exposed to thousands of known probes under controlled conditions. Each known probe can be deposited in a corresponding well of a microplate. Observing any chemical reactions that occur between the known probe and the unknown analyte in the well can help identify or reveal the properties of the analyte. Other examples of such protocols include known DNA sequencing processes, such as sequencing-by-synthesis (SBS) or circular array sequencing.

[0004] In some fluorescence detection protocols, optical systems are used to direct excitation light onto fluorophores, e.g., fluorescently labeled analytes, and to detect fluorescent emission light that may be emitted from analytes to which fluorophores are attached. However, such optical systems can be relatively expensive and benefit from a large benchtop footprint. For example, an optical system can include an arrangement of lenses, filters, and light sources.

[0005] In other proposed detection systems, the controlled reaction in the flow cell can be defined by a solid-state optical sensor array (e.g., a complementary metal oxide semiconductor (CMOS) detector or a charge coupled device (CCD) detector). These systems do not include a large optical assembly to detect the fluorescent emission. Summary of the Invention

[0006] In one example, a device is described herein. The device may, for example, include doped regions formed in a semiconductor formation in the receiving paths of the excitation light and the emission light.

[0007] In one example, a device is described herein that may include, for example, an array of doped areas formed in a semiconductor formation that receives excitation light and emission light from a detector surface, the doped areas of the array of doped areas defining photodiodes, and doped regions formed in the semiconductor formation in receiving paths of the excitation light and emission light.

[0008] In one example, a device is described herein. The device may include a detector surface including reaction sites for supporting, for example, a biological or chemical sample; The detector may include a plurality of spaced apart doped areas formed in a semiconductor formation, the semiconductor formation receiving the excitation light and the emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes; and a plurality of spaced apart doped regions formed in the semiconductor formation, each one of the plurality of spaced apart doped regions associated with a respective one of the doped areas, each one of the doped regions being disposed in a receiving path of the excitation light and the emission light intermediate the detector surface and the respective one of the doped areas, each doped region of the plurality of spaced apart doped regions formed in the semiconductor formation generating a respective electric field that influences a direction of travel of electrons generated in the respective doped region as a result of photons of the excitation light and the emission light being absorbed in the respective doped region.

[0009] In one example, a device is described herein that may include, for example, a detector surface for supporting a biological or chemical sample, an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes, and doped regions formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and the doped areas of the array of doped areas, the doped regions configured to affect the direction of travel of electrons generated in the doped regions as a result of photon absorption.

[0010] In one example, a method is described herein that may include, for example, forming an array of doped areas in a semiconductor formation, forming an array of doped regions in the semiconductor formation, each doped region of the array of doped regions being associated with a respective doped area of ​​the array of doped areas, and forming a detector surface, the semiconductor formation configured to receive excitation light and emission light from the detector surface, each doped region formed in the semiconductor formation in a receiving path of the excitation light and emission light from the detector surface.

[0011] In one example, a device is described herein that may include, for example, a support structure defining a detector surface configured to support a biological or chemical sample, an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes, and doped regions formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and the doped areas of the array of doped areas, the doped regions configured to affect the direction of travel of electrons generated in the doped regions as a result of photon absorption. [Brief description of the drawings]

[0012] These and other features, aspects, benefits, and advantages of the present subject matter will become better understood when the following detailed description is read in conjunction with the accompanying drawings, in which like features represent like parts throughout the drawings. [Figure 1] 1 is a schematic cutaway side view of a system for use in biological or chemical analysis having a detector including a detector surface for supporting a biological or chemical sample, according to one example. [Diagram 2] FIG. 1 is a spectral profile correspondence diagram illustrating the correspondence between excitation wavelengths, absorption wavelengths, fluorescent emission signal wavelengths, and detection band wavelengths, according to an example. [Diagram 3]1 illustrates the absorption depth of light in silicon, according to an example. [Figure 4] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Diagram 5] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 6] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 7] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 8] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 9] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 10] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 11] 1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 12]1 is a schematic cutaway side view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 13] 1 is a schematic cutaway top view of a detector for use in biological or chemical analysis, the detector including a detector surface for supporting a biological or chemical sample, according to one example. [Figure 14] FIG. 1 is a flow diagram showing a method for performing sequencing. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] 1 shows a system 100 for use in an analysis, such as a biological or chemical analysis. The system 100 may include an optical energy excitation device 10 and a detector assembly 20. The detector assembly 20 may include a detector 200 and a flow cell 282, which may be defined by the detector 200. The detector 200 may include a plurality of doped areas 212 that define a sensing photodiode and a detector surface 206 for supporting a sample 502, such as a biological or chemical sample, to be tested. The detector 200, having a sidewall 284 and a flow cover 288, and the detector surface 206, may define and bound the flow cell 282. The detector surface 206 may have an associated detector surface plane 130.

[0014] In further aspects, the detector surface 206 can include reaction sites, and in one example can be recessed to include reaction recesses 208 (nanowells). According to one example, each doped area 212 defining a sensing photodiode can be associated with and aligned to one reaction recess 208. According to one example, each reaction recess 208 can define one or more reaction sites therein, and the sample 502 can be supported on such reaction sites. The examples herein recognize that "area" as referred to herein in the context of "doped area" can refer to volumetric space (in other words, not limited to two-dimensional space). As used herein, the term "reaction site" can refer to a localized region in which at least one specified reaction can occur. As used herein, a "specified reaction" includes a change in at least one of the chemical, electrical, physical, or optical properties (or qualities) of a chemical or biological substance of interest, such as an analyte of interest.

[0015] In another embodiment, the detector 200 may include one or more metallization layers as described herein that define circuitry for, for example, readout, digitization, storage, and signal processing of signals from the doped areas 212 that define the sensing photodiodes.

[0016] According to one example, the detector 200 may be provided by a solid-state integrated circuit detector, such as a complementary metal-oxide semiconductor (CMOS) integrated circuit detector or a charge-coupled device (CCD) integrated circuit detector.

[0017] According to one example, system 100 may be used to perform biological or chemical tests using fluorophores. For example, a fluid having one or more fluorophores may be passed into and out of flow cell 282 through the inlet port 289 and the outlet port 290 using the inlet port 289 and the outlet port 290. Fluorophores may be attracted to various samples 502, and thus, upon their detection, the fluorophores may act as markers of the sample 502, e.g., biological or chemical analytes that the sample is attracted to.

[0018] To detect the presence of fluorophores in the flow cell 282, the optical energy excitation device 10 can be energized such that excitation light 101 in an excitation wavelength range is emitted by the optical energy excitation device 10. Upon receiving the excitation light 101, the fluorophores attached to the sample 502 can emit emission light 501 that is a signal of interest for detection by the doped area 212 that defines the sensing photodiode. The emission light 501 due to fluorescence of the fluorophores attached to the sample 502 can have a wavelength range that is red-shifted relative to the wavelength range of the excitation light 101.

[0019] The optical energy excitation device 10 may include at least one light source and at least one optical component to illuminate the sample 502. Examples of light sources include lasers, arc lamps, LEDs, or laser diodes. The optical components may be, for example, reflectors, polarizers, beam splitters, collimators, lenses, filters, wedges, prisms, mirrors, detectors, etc. In an example using an illumination system, the optical energy excitation device 10 may be configured to direct excitation light 101 to the reaction site. As an example, fluorophores may be excited by light in the green wavelength range, for example, using excitation light 101 having a central (peak) wavelength of about 523 nm.

[0020] The examples herein recognize that the signal-to-noise ratio of the system 100 may be expressed as set forth in equation (1) below:

[0021]

number

[0022] FIG. 2 is an example of a spectral profile correspondence diagram showing the target correspondence between the wavelength range of the excitation light, the wavelength range of the signal light, and the detection wavelength range. In the spectral profile correspondence diagram of FIG. 2, the spectral profile 1101 shown as a green light spectral profile is the spectral profile of the excitation light 101 emitted by the light energy excitation device 10. The spectral profile 1501 is the spectral profile of the emission light 501 caused by the fluorescence of the fluorophore excited by the excitation light 101. The spectral profile 1220 is, according to one example, the transmission profile (detection band) of the doped area 212 that defines the sensing photodiode. Although the spectral profile correspondence diagram of FIG. 2 is intended to represent general features common to several examples, it will be understood that the variations in the illustrated spectral profiles are common. In one embodiment, the excitation light 101 may generally include a blue light spectral profile (not shown) in addition to the green light spectral profile, and the system 100 is switchable between (a) a mode in which the green light spectral profile is active and the blue light spectral profile is inactive, and (b) a mode in which the blue light spectral profile is active and the green light spectral profile is inactive. In other examples, there may be different combinations of excitation light 101 and emission light. In one example, the spectral profile 1101 of the excitation light 101 may be characterized by a central wavelength in a blue light wavelength range, and the spectral profile of the emission light 501 may be characterized by a central wavelength in a green wavelength range.

[0023] The detector 200 may be configured to detect light in a wavelength range indicated by the spectral profile 1220. The spectral profile 1220 specifies a detection wavelength range, and the amplitude of the spectral profile 1220 indicates a level of sensitivity. Thus, referring to the spectral profile correspondence diagram of Figure 2, the detector 200 may detect the emitted light 501 in a range of wavelengths where the spectral profile 1501 of the emitted light 501 and the detection band spectral profile 1220 of the doped area 212 that defines the sensing photodiode intersect.

[0024] The detector 200 may include electron direction affecting features to increase the signal to noise ratio of the system 100. Referring to FIG. 1, the detector 200 may include a substrate 202 and a semiconductor formation 210. According to one example, the semiconductor formation 210 may be provided by a silicon layer, for example, a silicon layer defined on a bulk silicon wafer or a silicon layer of an SOI wafer. The semiconductor formation 210 may include various features formed therein to improve the signal to noise ratio of the system 100. In another example, the semiconductor formation 210 may be provided by a material other than silicon, for example, graphene, gallium nitride, silicon carbide, gallium arsenide, germanium, or other group IV semiconductor materials.

[0025] The semiconductor formation 210 can include a plurality of spaced apart doped areas 212 formed therein, where the spaced apart doped areas 212 can define a sensing photodiode. The plurality of spaced apart doped areas 212 can define an array of doped areas 212, where each one of the doped areas can define a sensing photodiode. In another embodiment, the semiconductor formation 210 can include a plurality of spaced apart doped regions 214 formed therein. The plurality of spaced apart doped regions 214 can define an array of doped regions 214. Each one of the doped regions 214 formed in the semiconductor formation 210 can be associated with each one of the doped areas 212 formed therein, where the doped areas 212 can define a sensing photodiode. Each doped area 212 configured as a sensing photodiode can generate a current signal in response to received electrons, where the doped region 214 can provide an electron direction influencing function.

[0026] Each one of the doped regions 214 can be formed to be associated with and aligned with a respective one of the plurality of doped areas 212. Each respective doped region 214 can be positioned in front of its associated doped area 212 in the path of the emission light 501 from the detector surface 206 at the sample 502 toward the doped area 212. With reference to the doped areas 212, the doped areas 212 can be doped to function as sensing photodiodes, and the doped regions 214 can be configured to affect the electron travel direction. In one example, a plurality of spaced apart doped regions 214 formed in a semiconductor formation 210 is described herein, each one of the plurality of spaced apart doped regions 214 is associated with a respective one of the doped areas 212 defining the sensing photodiode, and each one of the doped regions 214 is positioned in the receiving path of the excitation light 101 and the emission light 501 intermediate the detector surface 206 and each one of the doped areas 212 defining the sensing photodiode. In one example, described herein is a support structure 260 (support structure) that defines a detector surface 206 configured to support a biological or chemical sample 502, an array of doped areas 212 formed in a semiconductor formation 210, where the semiconductor formation 210 receives excitation light 101 and emission light 501 from the detector surface 206, where the doped areas 212 of the array of doped areas 212 define sensing photodiodes, and doped regions 214 formed in the semiconductor formation 210 in the receiving paths of the excitation light 101 and emission light 501 intermediate the detector surface 206 and the doped areas 212 of the array of doped areas 212, where the doped regions 214 are configured to affect the direction of travel of electrons generated in the doped regions 214 as a result of photon absorption. As used herein, the phrase "from the detector surface" when used in reference to excitation light or emission light is intended to mean that the light travels from the detector surface, but not necessarily originates from the detector surface. For example, light from a detector surface may be light that travels through the detector surface.

[0027] In one example, the doped area 212 defining the sensing photodiode may be, for example, an n-type doped region in a p-type substrate, or an n-type doped region on a p-type well on an n-type doped substrate, or any other diode combination. The semiconductor junction depth of the instance of the doped area 212 may be, according to one example, in a range of about 0.2 μm to about 2 μm. The size of the DTI feature may be, according to one example, about 0.1 μm to about 0.3 μm. The aspect ratio of the DTI formation may be, according to one example, about 1:5 to 1:25. In one example, the doped region 214 providing the electron direction influencing function may be, for example, an n-type doped region in a p-type substrate, or an n-type doped region on a p-type well on an n-type doped substrate, or any other diode combination. The junction depth of the doped region 214 may be selected depending on the target wavelength targeted for isolation.

[0028] To align respective ones of the doped regions 214 with respective ones of the doped areas 212, the associated doped regions 214 and doped areas 212 can be arranged to share a common vertically extending central axis 216, in one example, as shown in some of the figures. In various illustrated examples, the vertically extending central axis 216 of an instance of a doped area 212 can extend through an instance of a doped region 214, and the vertically extending central axis 216 of an instance of a doped region 214 can extend through an instance of a doped area 212.

[0029] FIG. 3 shows the absorption depth of light through silicon at various wavelengths. Absorption depth refers to the inverse of the absorption coefficient α. Absorption depth defines the distance from the surface into the material where the light falls to 1 / e (approximately 37%) of its original intensity. The examples herein recognize that the power of a wave in a particular medium is directly proportional to the square of the field quantity. Absorption depth is further defined herein as the distance from the surface into the material where the wave power falls to 1 / e of the surface value. 2 This refers to the depth at which the water level has decreased by approximately 13%.

[0030] Examples herein can use the absorption properties of light at different wavelengths to provide wavelength separation and selection. According to one example, doped regions 214 can be configured to affect the direction of electron travel to provide wavelength separation and selection and improve the signal-to-noise ratio of system 100. A functional description of doped regions 214 is described with reference to FIG. 4.

[0031] The examples herein recognize that a given semiconductor material absorbs more light at shorter wavelengths, and therefore the absorption depth of a given semiconductor material is relatively short at shorter wavelengths and relatively long at longer wavelengths. As the wavelength of light increases, the absorption depth of light in a given semiconductor material increases.

[0032] Examples herein can provide wavelength separation and selection using doped regions 214 such that electrons generated within the semiconductor formation 210 due to absorption of longer wavelength photons of the emission light 501 received within the semiconductor formation 210 are preferentially received by the doped areas 212 defining the sensing photodiode relative to electrons generated within the semiconductor formation 210 due to absorption of shorter wavelength photons of the excitation light 101 received within the semiconductor formation 210.

[0033] The examples herein recognize that in the absence of doped region 214, a majority of the photons from both the excitation light 101 and the emission light 501 may be absorbed in undoped areas within the semiconductor formation 210 to generate electrons, which may then diffuse in random directions within the semiconductor formation 210 until they reach the doped area 212 configured as a sensing photodiode. From Equation 1, the examples herein recognize that receipt of a significant proportion of electrons by the doped area 212 generated from photon absorption of the excitation light 101 may adversely affect the signal-to-noise ratio and detection of the emission light 501.

[0034] Examples herein can include doped regions 214 configured to influence electron travel direction such that electrons generated from photon absorption in the doped regions 214 do not reach the doped area 212 that defines the sensing photodiode.

[0035] In one aspect described herein, the doped region 214 defining the semiconductor junction 215 can be configured such that a depth dimension of the semiconductor junction 215 is selected according to the target wavelength of interest for isolation. In one example, by selecting a depth dimension of the semiconductor junction 215 defined by the doped region 214 to be greater than the absorption depth of the wavelength of interest for isolation, electron generation due to photon absorption of that wavelength can be substantially and mostly confined to the doped region 214, and the traveling direction of the generated electrons can be influenced to avoid the contribution of traveling electrons to the current signal generated by the doped area 212 defining the sensing photodiode. The dimensions of the doped region 214, including the depth of the semiconductor junction 215, can be controlled using doping parameters, which can include parameters such as doping concentration, doping location, and doping time.

[0036] In one example, an instance of the doped region 214 can be configured to feature a depletion region around the semiconductor junction 215 such that an electric field E is generated within the doped region 214, as shown in FIG. 4. The electric field E can be configured to affect the direction of travel of electrons generated by the absorption of photons within the doped region 214. In one example, the electric field E can affect the direction of travel of the photon-generated electrons by inducing a drift of the photon-generated electrons generated by the absorption of light within the doped region 214. The electric field E can affect the direction of travel of the photon-generated electrons by inducing a drift of the photon-generated electrons generated by the absorption of light within the doped region 214 such that the photon-generated electrons generated within the doped region drift toward the upper light incidence surface of the doped region 214 defined by the height 2144 of the semiconductor formation 210. The doped region 214 can be configured to feature a depletion region around the semiconductor junction 215 and can be configured to provide an electric field E that directs the photon-generated electrons toward the light incidence surface of the semiconductor formation 210 at the height 2144. The electric field E can force electrons generated in the doped region 214 to recombine without contributing to the current signal generated by the doped area 212 that defines the sensing photodiode. The generated electrons generated in the doped region 214 can be restricted by the electric field E from diffusing to reach the doped area 212 that defines the sensing photodiode on the opposite side of the semiconductor formation 210.

[0037] In one example, the doped region 214 herein can be configured to provide wavelength selection such that electrons resulting from photon absorption of the emission light 501 in the semiconductor formation 210 are preferentially received by the doped area 212 defining the sensing photodiode relative to electrons resulting from photon absorption of the excitation light 101 in the semiconductor formation 210. In one example, the doped region 214 herein can be configured to provide wavelength selection such that a proportion of photons of the emission light 501 absorbing in the semiconductor formation 210 below a junction depth of the junction 215 to generate electrons that diffuse to reach the doped area 212 defining the sensing photodiode is sufficient to facilitate detection of the emission light 501 received from the detector surface 206 in the presence of the illumination defining the excitation light 101. In one example, the doped region 214 herein can be configured to provide wavelength selection such that the proportion of photons of the excitation light 101 that are absorbed in the semiconductor formation 210 below the junction depth of the junction 215 to generate electrons that diffuse to reach the doped area 212 defining the sensing photodiode, relative to the proportion of photons of the emission light 501 that are absorbed in the semiconductor formation 210 below the junction depth of the junction 215 to generate electrons that diffuse to reach the doped area 212 defining the sensing photodiode, is sufficient to facilitate detection of the emission light 501 received from the detector surface 206 in the presence of illumination that defines the excitation light 101. In one example, the doped region 214 herein can be configured to provide wavelength selection such that the proportion of electrons resulting from photon absorption of the emitted light 501 in the semiconductor formation 210 generated below the junction depth of the junction 215 that diffuse to reach the doped area 212 defining the sensing photodiode is sufficient to facilitate detection of the emitted light 501 received from the detector surface 206 in the presence of illumination defining the excitation light 101.In one example, the doped region 214 herein can be configured to provide wavelength selection such that the proportion of electrons resulting from photon absorption of excitation light 101 in the semiconductor formation 210 generated below the junction depth of junction 215 that diffuse to reach the doped area 212 defining the sensing photodiode relative to the proportion of electrons resulting from photon absorption of emission light 501 in the semiconductor formation 210 generated below the junction depth of junction 215 that diffuse to reach the doped area 212 defining the sensing photodiode is sufficient to facilitate detection of the emission light 501 received from the detector surface 206 in the presence of illumination that defines the excitation light 101.

[0038] In one example, the doped region 214 can be configured to provide wavelength selection of the excitation light 101 such that a proportion of photons of the excitation light 101 absorbed in the semiconductor formation 210 that are absorbed within the doped region 214 to limit the resulting electrons from diffusing and reaching the doped area 212 defining the sensing photodiode is sufficient to facilitate detection of the emission light 501 received from the detector surface 206 in the presence of the illumination defining the excitation light 101.

[0039] In one example, the doped region 214 can be configured to have a junction depth defined by the height 2146 of the junction 215 that is greater than the absorption depth of the central wavelength of the excitation light 101 or another target wavelength of the light to be isolated. By configuring the doped region 214 such that the semiconductor junction 215 is characterized by a depth that is greater than the absorption depth of the central wavelength of the excitation light 101, it can be expected that a majority of the photons at the central wavelength of the excitation light 101 will be absorbed in the doped region 214 to generate photon-generated electrons in the doped region 214 that, in the presence of the electric field E, can drift toward the top surface of the doped region 214 without diffusing in random directions to reach the doped area 212 that defines the sensing photodiode.

[0040] By configuring the doped region 214 such that the semiconductor junction 215 is characterized by a depth of height 2146 that is greater than the absorption depth of the central wavelength of the excitation light 101, the percentage of photons at the central wavelength of the excitation light 101 that are absorbed below the depth of the semiconductor junction 215 of height 2146 can be limited, such that only a limited percentage of photons at the central wavelength of the excitation light 101 are absorbed to generate electrons below the height 2146 of the junction 215 that can diffuse in random directions to be received by the doped area 212 and contribute to a current signal by the doped area 212 that defines the sensing photodiode. By limiting the percentage of photons absorbed below the height 2146 at a given wavelength, the percentage of electrons that are generated as a result of photon absorption at a given wavelength can be limited. By limiting the percentage of electrons that are generated as a result of absorption of photons at the central wavelength of the excitation light 101 that reach the doped area 212 that defines the sensing photodiode, detection of the emission light 501 can be facilitated.

[0041] The doped region 214 can include a junction depth of the junction 215 of height 2146 such that only a limited percentage of photons at the central wavelength of the excitation light 101 are absorbed to generate electrons below the height 2146 of the junction 215, and the depth of the semiconductor junction 215 of height 2146 can be configured such that a significant percentage of photons at the central wavelength of the emission light 501 can be absorbed below the height depth of the junction 215 of height 2146 to generate electrons below the height 2146 of the junction 215, which can diffuse in random directions to be received by the doped area 212 and contribute to a current signal generated in response to the electrons received by the doped area 212 defining the sensing photodiode.

[0042] In one example, the junction depth of the junction 215 at height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode is greater than the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode. In one example, the junction depth of the junction 215 at height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode is greater than about two times the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode. In one example, the junction depth of the junction 215 at height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode is about 10 times or more greater than the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode. In one example, the junction depth of the junction 215 at height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode is about 20 times or more greater than the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sense photodiode.In one example, the junction depth of the junction 215 at height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 that are absorbed below height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sensing photodiode is greater than about 50 times the percentage of photons at the central wavelength of the excitation light 101 that are absorbed below height 2146 to generate electrons that diffuse to reach the doped area 212 defining the sensing photodiode.

[0043] In one example, the junction depth of the junction 215 at the height 2146 can be configured to be below the absorption depth of the central wavelength of the excitation light 101 and above the absorption depth of the central wavelength of the excitation light 101. By configuring the doped region 214 to be below the absorption depth of the central wavelength of the excitation light 101 and above the absorption depth of the central wavelength of the excitation light 101, the absorption of photons at the central wavelength of the excitation light 101 below the height 2146 can be limited and the absorption of photons at the central wavelength of the emission light 501 below the height 2146 can be substantially facilitated, such that the doped area 212 receives by diffusion a substantial proportion of the electrons generated in the semiconductor formation 210 due to the absorption of photons at the central wavelength of the emission light 501 in the semiconductor formation 210.

[0044] The proportion of electrons generated due to absorption of photons at the central wavelength of the emitted light 501 that diffuse to be received by the doped area 212 defining the sensing photodiode may be sufficient to facilitate detection of the emitted light 501, particularly when the proportion of electrons generated by absorption of photons at the central wavelength of the excitation light 101 that diffuse to be received by the doped area 212 defining the sensing photodiode is limited by the above-mentioned wavelength separation and selection functions of the doped region 214.

[0045] In one example, the junction depth of the junction 215 of the height 2146 can be configured to be about 1 or more times deeper than the absorption depth of the central wavelength of the excitation light 101. In one example, the junction depth of the junction 215 of the height 2146 can be configured to be about 2 or more times deeper than the absorption depth of the central wavelength of the excitation light 101. In one example, the junction depth of the junction 215 of the height 2146 can be configured to be about 1 or more times deeper than the absorption depth of the central wavelength of the excitation light 101. In one example, the junction depth of the junction 215 of the height 2146 can be configured to be about 5 or more times deeper than the absorption depth of the central wavelength of the excitation light 101. In one example, the junction depth of the junction 215 of the height 2146 can be configured to be about 7 or more times deeper than the absorption depth of the central wavelength of the excitation light 101. In any of the examples described, the height 2146 can be configured to be less than the absorption depth of the central wavelength of the emission light 501.

[0046] The doping depth of the doped region 214 that defines the semiconductor junction 215 of height 2146 can be configured to be different for different wavelengths of the excitation light 101 and the emission light 501. For example, if the excitation light 101 includes shorter wavelengths (e.g., blue light rather than green light), the depth of the doped region 214 can be configured to be shorter, so that photon absorption and therefore photon-absorption electron generation for the shorter wavelength light remains substantially and mostly contained in the doped region 214, while the area for absorption and electron generation due to the longer wavelength light is longer for improved signal-to-noise ratio. If the emission light 501 includes longer wavelengths (e.g., wavelengths at the long wavelength boundary of red), the depth of the junction 215 of height 2146 can be increased to increase the separation of the excitation light 101, while still facilitating substantial photon absorption of the emission light 501 below the height 2146 of the semiconductor junction 215 sufficient for detection of the emission light 501.

[0047] In one example, the depth of the junction 215 may be configured such that (a) absorption of the excitation light 101 may be substantially and mostly confined to the doped region 214, (b) absorption of the excitation light 101 is limited at a height of the semiconductor formation 210 below the depth of the semiconductor junction 215 of height 2146, and (c) substantial absorption of the emission light 501 occurs both above and below the depth of the semiconductor junction 215 of height 2146. In one example, the depth of the semiconductor junction 215 of height 2146 may be configured such that the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 of the semiconductor junction 215 is about 13 percent or less. In one example, the depth of the semiconductor junction 215 of height 2146 may be configured such that the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 of the semiconductor junction 215 is about 10 percent or less. In one example, the depth of the semiconductor junction 215 of the height 2146 can be configured such that the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 of the semiconductor junction 215 is about 5 percent or less. In one example, the depth of the semiconductor junction 215 of the height 2146 can be configured such that the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 of the semiconductor junction 215 is about 1 percent or less. In one example, the depth of the semiconductor junction 215 of the height 2146 can be configured such that the percentage of photons at the central wavelength of the excitation light 101 absorbed below the height 2146 of the semiconductor junction 215 is about 0.1 percent or less. In one example, the depth of the semiconductor junction 215 of the height 2146 can be configured such that the percentage of photons at the central wavelength of the emission light 501 absorbed below the height 2146 of the semiconductor junction 215 is about 13 percent or more. In one example, the depth of the semiconductor junction 215 of height 2146 can be configured such that the percentage of photons at the central wavelength of the emitted light 501 that are absorbed below the height 2146 of the semiconductor junction 215 is about 20 percent or more. In one example, the depth of the semiconductor junction 215 of height 2146 can be configured such that the percentage of photons at the central wavelength of the emitted light 501 that are absorbed below the height 2146 of the semiconductor junction 215 is about 40 percent or more.

[0048] Referring again to FIG. 2, the excitation light 101 can be characterized by a spectral profile 1101 as shown in FIG. 2, which is a green light spectral profile, and the emission light 501 can be characterized by a spectral profile 1501 as shown in FIG. 2, which is a red light spectral profile. Referring to FIG. 4, the behavior of green light photon-generated electrons is contrasted with the behavior of red light photon-generated electrons. FIG. 4 illustrates a scenario in which both the excitation light 101 and the emission light 501 are received from the detector surface 206 and directed toward the doped region 214 and doped area of ​​the semiconductor formation 210. In the illustrative example depicted in FIG. 2, the excitation light 101 can include green light (about 500 nm to about 565 nm) and the emission light 501 can include red light (about 620 nm to about 750 nm).

[0049] The behavior of green light 2141 in semiconductor formation 210 will be described with reference to Fig. 4. In an illustrative example, green light 2141 in the green wavelength band can exhibit an absorption depth in semiconductor formation 210 up to a range of heights around height 2145, such that most of the green light received by semiconductor formation 210 is absorbed in doped region 214 between height 2144 and height 2146, where height 2146 is the height of the semiconductor junction depth of semiconductor junction 215. The green light in the described scenario can be substantially and mostly absorbed in doped region 214.

[0050] Electrons 2152 represent electrons generated by photon absorption in doped region 214. According to one example, electrons 2152 generated by photon absorption in doped region 214 due to electric field E can be expected to drift to the light incident surface of semiconductor formation 210 at height 2144, which is the top height of doped region 214. Since the majority of green light photons (about 500 nm to about 565 nm) can be expected to be absorbed at an absorption depth within the height depth of doped region 214, the majority of electrons generated as a result of green light photon absorption can be expected to exhibit the behavior of electrons 2152, i.e., be directed to drift upward to the top surface of height 2144 of doped region 214.

[0051] The behavior of red light 2142 (approximately 620 nm to approximately 750 nm) in semiconductor formation 210 will be described with reference to FIG. 4. In an illustrative example, red light 2142 in the red wavelength band has an absorption depth (intensity is approximately 1 / e of the initial intensity and wave power is approximately 1 / e of the initial wave power) in semiconductor formation 210 up to a height range around height 2147. 2 2A), such that a significant percentage of the red light photons received by the semiconductor formation 210 are absorbed within the semiconductor formation 210 at a height below the height of the semiconductor junction 215 of the doped region 214.

[0052] Electrons 2153 represent electrons generated by photon absorption in the undoped region of the semiconductor formation 210 below the bottom height 2146 of the doped region 214 defined by the semiconductor junction 215. In the absence of an electric field E at the location of absorption, electrons 2153 generated by photon absorption in the undoped region of the semiconductor formation 210 below the bottom height of the doped region 214 defined by the junction 215 can be expected to randomly diffuse and ultimately be received by the doped area 212 defining the sensing photodiode. According to one configuration of the semiconductor formation 210, red light (about 620 nm to about 750 nm) can be expected to be absorbed to a significant extent at the height depth of the semiconductor formation 210, i.e., between 2144 and 2147. Red photons can be expected to be absorbed to a significant extent at the height depth of the semiconductor formation 210 both within the height range of the doped region 214 and below the height range of the doped region 214.

[0053] In the described scenario, red light can be expected to be substantially absorbed at all depths within heights 2144 and 2147, so that a first substantial proportion of electrons generated as a result of red light photon absorption occurring within doped region 214 can be expected to exhibit the behavior of electron 2152, and a second substantial proportion of electrons generated as a result of red light photon absorption occurring within an undoped region of the semiconductor formation below bottom height 2146 of doped region 214 defined by junction 215 can be expected to exhibit the behavior of electron 2153.

[0054] In the absence of an electric field E at the location of absorption, electrons 2153 generated by photon absorption in the undoped region of the semiconductor formation 210 below the bottom level of the doped region 214 defined by the junction 215 can be expected to diffuse randomly and ultimately be received by the doped area 212 defining the sensing photodiode to contribute to the current sensed by the doped area 212.

[0055] The height 2147 in the described example is above but adjacent to the top height of the doped area 212, and below but closer to the top height of the doped area 212 than the height 2146 of the junction 215. In the described example, the semiconductor formation 210 can be configured such that the absorption depth of red light is defined around the height 2147 adjacent but above the top height of the doped area 212. Alternatively, it will be appreciated that the semiconductor formation 210 can be configured to have different heights for the absorption depth of red light within the semiconductor formation 210 relative to the structures therein depending on the application, for example, between the height 2147A below but adjacent to the height of the junction 215 and the height 2147Z intersecting the doped area 212. The examples herein recognize that identifying optimized configurations for different applications can be aided by the use of optical system simulation software, such as the optical system simulation software OPTICSTUDIO® available from Zemax LLC.

[0056] According to one example, due to the electric field E, electrons generated as a result of photon absorption in doped region 214 can be expected to drift to the light incident surface of semiconductor formation 210 at height 2144, which is the top height of doped region 214. Since the majority of green light photons (about 500 nm to about 565 nm) can be expected to be absorbed at an absorption depth within the height depth of doped region 214, the majority of electrons generated as a result of green light photon absorption can be expected to exhibit the behavior of electron 2152, i.e., be directed by electric field E to drift upward to the top light incident surface of semiconductor formation 210 at height 2144 of doped region 214 and semiconductor formation 210.

[0057] The examples herein recognize that the absorption depth of light in silicon is shorter at shorter wavelengths and longer at longer wavelengths. As the wavelength increases, the absorption depth of light increases. Because the emission light 501 from the fluorophore has a longer wavelength than the excitation wavelength of the excitation light 101, the absorption depth of the emission light 501 is deeper than the absorption depth of the shorter wavelength of the excitation light 101. For wavelength separation herein, a semiconductor junction provided by the doped region 214 can be created on the semiconductor formation 210 by doping. The semiconductor junction defined by the doped region 214, when correctly designed to feature a depletion region around the junction 215, presents an electric field E that directs photogenerated electrons toward the light incident surface of the semiconductor formation 210 at height 2144. The electric field E can recombine these electrons that are generated as a result of photon absorption within the doped region 214, so that the recombined electrons do not contribute to the current signal generated in response to the electrons received by the doped region 214 that defines the sensing photodiode. The semiconductor junction and doping depth of the doped region 214 can be designed to be different for different wavelengths of the excitation light 101 and emission light 501. The electric field E in the doped region 214 can cause electrons generated by photon absorption in the doped region 214 to drift towards and recombine with the light incident side of the semiconductor formation 210. The electric field E can restrict the generated electrons generated in the doped region 214 from diffusing to reach the doped area 212 defining the sensing photodiode on the opposite side of the semiconductor formation 210.

[0058] While FIG. 4 illustrates an example in which the excitation light 101 is provided by green light and the emission light 501 is provided by red light, examples herein recognize that the depth of the junction 215 may be configured to optimize wavelength separation of the excitation light 101 for different combinations of the excitation light 101 and the emission light 501. In one example, the depth of the semiconductor junction 215 may be optimized for wavelength separation of the excitation light 101, where the excitation light 101 is provided by blue light and the emission light 501 is provided by red light. In one example, the depth of the semiconductor junction 215 may be optimized for wavelength separation of the excitation light 101, where the excitation light 101 is provided by blue light and the emission light 501 is provided by green light. As shown in FIG. 4, the doped regions 214 may be spaced apart from their associated doped areas 212 by a spacing distance. The spacing distance may be the distance between the junction 215 of height 2146 and the junction 213 of the doped region of height 2148. 4, the doped areas 212 can have a common depth dimension defined by junctions 213 at heights 2148. In one example, the semiconductor formation 210 can be undoped in portions of the semiconductor formation 210 other than the doped regions 214 and the doped areas 212.

[0059] An alternative method of fabricating the detector 200 will now be described with reference to Figures 4 to 10. Figure 5 shows a detector 200 formed by a fabrication method in which a dielectric stack 232 having one or more metallization layers 226 embedded therein may be fabricated on the front side of a semiconductor formation 210.

[0060] For the fabrication of the detector 200 in the example of FIG. 5, the doped area 212 may be formed on the backside surface of the semiconductor formation 210. For such formation of the doped area 212, the layer defining the semiconductor formation 210 may be oriented upside down, for example using a handle wafer. The semiconductor formation 210 in all examples herein may be defined by a silicon layer. The silicon layer may be provided, for example, by a layer defining a bulk silicon wafer, or by a silicon layer of a silicon on insulator (SOI) wafer. Prior to doping to define the doped area 212, the surface of the silicon layer defining the semiconductor formation 210 may be planarized. In one example, the semiconductor formation 210 may be formed from a monolithic single piece of material, for example provided by a bulk silicon wafer, or a silicon layer of a SOI wafer, or a deposited silicon layer supported on a substrate, for example provided by a silicon layer as described herein.

[0061] Following the formation of the doped areas 212, the substrate 202, for example provided by a bulk silicon wafer, can be bonded to the semiconductor formation 210, for example using thermal oxide bonding. Throughout the figures, the substrate 202 can include a thickness ranging from about 400 μm to about 800 μm, according to one example, to mechanically support the silicon formation 210 and the remaining structures fabricated thereon. The detector 200 in the intermediate fabrication stage with the substrate 202 and the semiconductor formation 210 can then be positioned vertically upwards in an orientation as shown in FIG. 5 for further front side fabrication processing.

[0062] With reference to further fabrication process steps, the doped regions 214 may be formed using, for example, ion implantation. Prior to forming the doped regions 214, the layers defining the semiconductor formation 210 may be planarized to reduce the height of the semiconductor formation to a desired height. Once the doped regions 214 are formed, trenches may be formed in the semiconductor formation 210 by etching, and the trenches may be filled with a dielectric material to define deep trench isolation (DTI) formations 218, as shown in FIG.

[0063] Throughout the examples, doped areas 212 and doped regions 214 may be created using ion implantation and a photolithography mask applied onto the planarized surface of semiconductor formation 210 to pattern instances of doped areas 212 and doped regions 214 in their desired locations.

[0064] Following deposition of the dielectric material that forms the DTI formation 218, the semiconductor formation 210 may be planarized to create a flat surface for fabrication of additional structures. With the top surface of the formation 210 planarized, a dielectric stack 232 may be formed. The dielectric stack 232 may be formed by a deposition and patterning process on the semiconductor formation 210. The dielectric stack 232 may incorporate therein one or more metallization layers 226 as well as patterned filters 234, one filter 234 associated with each respective doped area 212 that defines a sensing photodiode. The filters 234 may be formed by etching trenches in the dielectric stack 232 and filling the trenches with a filter material. Upon deposition of the filter material to define the filter 234, the top surface of the dielectric stack 232 may be planarized to facilitate deposition and patterning of one or more layers that define the sample support structure 260. The filters 234 herein can feature a light guiding function that guides light from the detector surface 206 toward the doped areas 212 that define the sensing photodiodes. The filters 234 can include a filter material, according to one example. The filter material can block the illumination that forms the excitation light 101 and allow the light of the emission light 501 to propagate toward the respective doped regions 214 that define the sensing photodiodes. The filter material can include a dye suspended in a polymer matrix, in one example.

[0065] The reaction recesses 208 (nanowells) of the sample support structure 260 can be fabricated in a dielectric layer. The sample support structure 260 can include multiple, e.g., two or three, different dielectrics. For example, the sample support structure 260 can include SiN and TaOx (Ta2O5). The reaction recesses 208 (nanowells) can be fabricated by lithography followed by etching.

[0066] FIG. 6 shows an example similar to that of FIG. 5, with a backside fabrication process applied for the formation of the dielectric stack 232 including the filter 234, rather than a frontside fabrication process. To fabricate the detector 200 shown in FIG. 6, the structure defining the semiconductor formation 210, e.g., a bulk wafer or an SOI wafer, can be oriented in the orientation shown as an initial fabrication stage. In one example, the surface of the structure defining the semiconductor formation 210 can be planarized, and then the doped region 214 can be formed. The semiconductor formation 210 obtained at the intermediate fabrication stage can then be turned upside down to facilitate a frontside fabrication process of the semiconductor formation 210. The frontside fabrication process can include planarizing the structure defining the semiconductor formation 210 down to the desired thickness of the semiconductor formation 210. Once the desired thickness of the semiconductor formation 210 is achieved, the doped area 212 can be formed, for example, by ion implantation. Trenches may then be formed by etching between the doped regions 214, and the formed trenches may then be filled with a dielectric material to define the DTI formation 218. The semiconductor formation 210 may be subjected to planarization to remove excess portions of the dielectric material.

[0067] Thereafter, with the front side surface of the semiconductor formation 210 defined at height 1504, a dielectric stack 224 may be formed on the top front side surface of the semiconductor formation 210 via deposition and etching processes. One or more metallization layers 226 may be fabricated within the dielectric stack 224 that may define circuitry for, for example, readout, digitization, storage, and / or signal processing of signals from the doped areas 212 that define the sensing photodiodes.

[0068] Thereafter, with the dielectric stack 224 fabricated, the dielectric stack 224 can be planarized and then the substrate 202 can be attached to the upper surface of the dielectric stack 224 at height 1506 via bonding, for example oxide bonding. The structure shown in FIG. 6 at an intermediate fabrication stage can then be reoriented to the orientation shown in FIG. 6 to facilitate backside fabrication processing of the detector 200. With the semiconductor formation 210 in the illustrated orientation, the dielectric stack 233 can be fabricated via deposition and etching fabrication processing. The dielectric stack 233 may be free of metallization layers. Within the dielectric stack 233, one filter 234 can be fabricated for each doped area 212 that defines a sensing photodiode.

[0069] According to one example, the dielectric stack 233 shown in Figure 6 may provide improved performance over the dielectric stack 232 shown in Figure 5 due to the absence of one or more metallization layers 226 on the front side of the semiconductor formation 210 in the example of Figure 6. To fabricate the filter 234, a trench may be etched in the dielectric stack 233 and then planarized. With the top surface of the dielectric stack 233 planarized, a sample support structure 260 including one or more deposition layers may be formed by a deposition and etch fabrication process.

[0070] The example of Figure 7 is similar to the example of Figure 6 in that it uses a backside fabrication process similar to that of Figure 6, except that the dielectric stack 233 with the filter 234 is eliminated and a sample support structure 260 for holding a sample is fabricated directly on the backside surface of the semiconductor formation 210. In one example, the semiconductor formation 210 can be planarized to a height 1602, and then the sample support structure 260 can be fabricated on the backside surface of the semiconductor formation 210 at the height 1602 using an appropriate fabrication process including deposition and patterning.

[0071] The examples herein recognize that a filter 234 associated with each doped area 212 that defines a sensing photodiode may block the illumination that forms the excitation light 101. However, the electron direction influencing function of the doped region 214 may be sufficient to make the filter 234 unnecessary in some examples.

[0072] The examples herein recognize that the electron trajectory influencing function of the doped regions 214 can significantly reduce the thickness requirements of the detector 200. For example, the electron trajectory influencing function of the doped regions 214 can allow the filters 234 to be eliminated or their thickness to be reduced.

[0073] Referring to the example of FIG. 8, the example of the detector 200 shown in FIG. 8 is similar to the example of the detector 200 shown in FIG. 6, except that the dielectric stack 233 with the filter 234 provided by the patterned filter can be replaced by a monolithic filter 235. The monolithic filter 235 can be deposited on the back surface of the semiconductor formation 210 at a height 1702, and after deposition, a planarization can be performed to reduce the thickness of the monolithic filter 235 to a height 1704, and then the sample support structure 260 can be fabricated, for example, by depositing and patterning the sample support structure 260 on the top surface of the monolithic filter 235 defined by the height 1704. The monolithic filter 235 can be configured such that the vertically extending central axis 216 of the multiple areas of the doped area 212 extends through the monolithic filter 235.

[0074] The example of detector 200 as shown in FIG. 9 illustrates that DTI formation 218 may be formed by etching a trench that narrows toward either the front side or alternatively the back side of semiconductor formation 210. In addition, the example of detector 200 shown in FIG. 9 illustrates an alternative method for creating doped region 214. In the examples of FIGS. 1, 4-8, doped region 214 may be formed using a lithography mask to pattern the location of doped region 214. In the example shown in FIG. 9, ion implantation may be performed to define extended doped region 214E that extends continuously along the surface of semiconductor formation 210 as shown, and isolated doped region 214 may be defined by the creation of a trench that is used to create DTI formation 218 (see exemplary DTI formations in “A”, “B”, “C” and “D”). The extended doped region 214E can be formed on a light incidence surface of the semiconductor formation 210, which can be the front surface of the semiconductor formation 210 (e.g., as shown in FIG. 5) or the back surface of the semiconductor formation (e.g., as shown in FIG. 6). The extended doped region 214E can be configured such that the vertically extending central axis 216 of the multiple areas of the doped area 212 extends through the extended doped region 214E. In the example of FIG. 9, the doped region 214 can extend laterally to contact the DTI formation 218 to eliminate photon absorption in the non-doped area of ​​the semiconductor formation 210 laterally adjacent to the doped region 214. The feature described with reference to FIG. 9 in which the doped region 214 extends laterally to contact the DTI formation can be incorporated into any of the remaining examples herein. With reference to FIG. 9, the extended doped region shown to extend laterally can be considered a laterally extending doped region.With reference to FIG. 9, a method is described herein in which forming an array of doped regions in a semiconductor formation includes forming a laterally extending doped region 214E, the laterally extending doped region 214E extending laterally opposite a plurality of doped areas 212 of the array of doped areas 212, with a central axis 216 of the plurality of doped regions extending in common through the laterally extending doped region 214E (see FIG. 9), etching the laterally extending doped region 214 to define a trench, and filling the trench with a dielectric material to define a DTI formation 218 separating the laterally extending doped region 214E from each of the doped regions 214 defining the array of doped regions 214.

[0075] The DTI formations 218 can be made in a variety of ways, for example, as shown in Figure 9, the DTI formations 218 can be formed from the backside to the frontside, the DTI formations 218 can be formed from the frontside to the backside but may not extend completely through, or the DTI formations 218 can be formed from the frontside to the backside but may extend completely through the semiconductor formation 210.

[0076] 10, another example of a detector 200 is shown. In the example of FIG. 10, the doped regions 214 can be configured to have first and second junction depths. A first set of doped regions 214 can have a junction depth defined at a relatively deep height 1022, and a second set of doped regions 214 can have a junction depth defined at a relatively shallow height 1024. To separate the relatively long wavelength excitation light 101 (e.g., green light), the junctions 215 at the relatively deep height 1022 can be optimized while the emission light absorption below the height 1022 can be optimized, and to separate the relatively short wavelength excitation light 101 (e.g., blue light), the semiconductor junctions 215 at the shallower height 1024 can be optimized while the emission light absorption below the height 1024 can be optimized. The optical energy excitation device 10 in the example of FIG. 10 can be configured to selectively direct excitation photons to respective ones of the reaction recesses 208 at first and second different times. For example, the reaction recesses 208 may be illuminated at a first time with any suitable number of laser beams that interfere with each other to generate a first light intensity pattern at a first wavelength that selectively excites at a first time a first set of reaction recesses 208 associated with a first set of doped regions 214, and at a second time with any suitable number of laser beams that interfere with each other to generate a second light intensity pattern at a second wavelength that selectively excites at a second time a second set of reaction recesses 208 associated with a second set of doped regions 214. The light energy excitation device 10 in the example of FIG. 10 may alternatively be configured to simultaneously commonly excite substantially all of the reaction recesses 208 of the detector 200 at a common time. "Substantially all" herein includes and encompasses the example of "literally all". FIG. 10 illustrates a pattern in which the doped regions 214 (FIG. 13) at adjacent pixel locations have alternating junction depths of a first deeper junction depth and a second shallower junction depth.The same pattern can be repeated in the depth dimension such that each doped region 214 at pixel location C2 has adjacent doped regions having a common junction depth (e.g., all deeper or all shallower) at its four corner adjacent pixel locations (e.g., B1, B3, D3, and D1 for C2) and adjacent doped regions 214 having a different junction depth relative to its own junction depth at its four side adjacent pixel locations (e.g., C1, B2, C3, D2 for C2).

[0077] According to the operating principle of the detector 200, the doped region 214 can be configured such that the absorption depth of the longer wavelength (e.g. red light) extends beyond the depth of the doped region 214 defined by the semiconductor junction 215, while the absorption depth of the unwanted light, such as the unwanted excitation light 101, does not extend beyond the depth of the doped region 214 defined by the semiconductor junction 215. The longer wavelength light may be partially absorbed in the doped region 214, and the electrons generated from the absorption may drift toward the light incident surface of the semiconductor formation 210. However, a significant proportion of the longer wavelength light may be absorbed in the undoped region of the semiconductor formation 210 below the height of the semiconductor junction 215, generating electrons that diffuse in random directions, and the electrons may reach the doped area 212 that defines the sensing photodiode.

[0078] If the emitted light 501 defining a longer wavelength light is absorbed below the bottom height 2146 (FIG. 4) of the doped region 214 defined by the junction 215, photon absorption generated electrons due to the longer wavelength light may be generated, which reach the doped area 212 defining the sensing photodiode by diffusion. The shorter wavelength light (e.g., green or blue) is mostly absorbed within the height of the semiconductor formation 210 above the bottom height 2146 of the doped region 214 defined by the junction 215. This results in photon generated electrons, but these electrons generated within the doped region 214 are forced to drift towards the light incident surface of the semiconductor formation 210 due to the presence of the electric field E created by the doped region 214.

[0079] The examples herein recognize that the use of doped regions 214 to perform the wavelength selection described in the semiconductor formation 210 can provide examples of the system 100 having various distinct features that can be characterized by the doped regions 214, as well as additional features that are facilitated by the function of the doped regions 214. For example, the filters 234 can be eliminated or their size, including height, can be significantly reduced. If the aspect ratio of the filters 234 is significantly reduced or the filters 234 are eliminated entirely, the diameter dimension of the doped areas 212 that define the sensing photodiodes can be reduced to a dimension of, for example, about 1.0 μm or less to facilitate higher pixel density (characterized by an increase in the number of pixel locations over a given area in the XY plane, as shown in FIG. 13). In another example, the doped regions 214 can facilitate reducing the diameter dimension of the doped areas 212 that define the sensing photodiodes to less than 1.0 μm. Thus, several benefits and advantages may be achieved in accordance with one or more of the examples described herein, including simplified or more efficient manufacturing, higher pixel density (smaller pitch), and improved performance.

[0080] Examples herein recognize that in the absence of doped regions 214, removal of signals due to excitation light 101 may depend on filter 234, resulting in a filter having a significant thickness and aspect ratio. For example, if the feature size is 0.2 μm and the aspect ratio is 1:20, the trench may extend to a depth of about 4 μm or more into semiconductor formation 210, imposing fabrication challenges. Fabrication challenges may be posed by the height of filter 234, the height of the filter, and the aspect ratio. Examples herein recognize that challenges may be posed by the incorporation of filter 234, which may provide a light guiding function. Examples herein recognize that this difficulty increases as the pitch of doped areas 212 that define the sensing photodiodes decreases, making the aspect ratio of filter 234 with light guiding function more difficult. The trenches for forming filter 234 may be difficult to fill and may result in defects in the filter construction. The examples herein recognize that when the filter pitch is reduced to a pitch of about 3.0 μm to about 3.5 μm, further reduction in filter thickness may be difficult, if possible at all.

[0081] Examples herein can facilitate the elimination of the filter 234 or the use of a filter having a reduced thickness, which eliminates fabrication challenges. The filter 234 herein can include a wavelength-selective filter configured to block wavelengths in a first wavelength range and transmit wavelengths in a second wavelength range. The filter 234 herein can be configured to block wavelengths of the excitation light 101 and can be further configured to transmit wavelengths of the emission light 501. The filter 234 herein according to an example can be provided by a material including a dye suspended in a polymer matrix. The filter 234 herein according to an example can be provided by an organic filter. As described herein, examples can facilitate the elimination of the filter 234. Examples herein recognize that the elimination of the filter 234 can eliminate material processing compatibility challenges in the wafer build structure defined by the detector 200. The function of the filter 234 to perform wavelength selection can be distinguished from the function of the semiconductor formation 210 having the doped region 214 to perform wavelength selection. In one example, the function of the filter 234 to perform wavelength selection may be based on heat generated as a result of photon absorption (which has properties that vary depending on wavelength), while the function of the semiconductor formation 210 having the doped region 214 to perform wavelength selection may be based on electrons generated as a result of photon absorption (which has properties that vary depending on wavelength), which may drift or diffuse as described herein.

[0082] As described herein, the doped region 214 defining the semiconductor junction 215 can be configured such that the depth dimension of the semiconductor junction 215 is selected depending on the wavelength of interest or range of wavelengths of interest. In one example, by selecting the depth dimension of the semiconductor junction 215 defined by the doped region 214 to be longer than the absorption depth of the wavelength of interest, electron generation due to photon absorption of that wavelength can be substantially and mostly confined to the doped region 214, and the traveling direction of the generated electrons can be influenced to avoid the contribution of traveling electrons to the current signal generated by the doped area 212 defining the sensing photodiode. The dimensions of the doped region 214, including the depth of the semiconductor junction 215, can be controlled using doping parameters, which can include parameters such as doping concentration, doping location, and doping time.

[0083] In one example, the doped region 214 can be formed using thermal diffusion doping. Thermal diffusion doping can include a deposition step and a diffusion step. In the deposition step, a dopant can be applied to the surface to be doped. In the diffusion step, thermal energy can be applied to diffuse the dopant to a target diffusion depth below the surface to be doped.

[0084] In some examples of the fabrication system 100, the thermal budget can be managed to facilitate the formation of the doped region 214 to exhibit a target depth dimension. Examples herein recognize that thermal budget limitations can limit the depth dimension of the doped region 214. Examples herein can include fabrication methods that increase the thermal budget associated with the steps for fabricating the doped region 214, and thus increase the depth dimension of the semiconductor junction 215 of the doped region 214 achievable through the use of thermal diffusion doping.

[0085] In various examples, a dielectric stack incorporating one or more metallization layers, such as dielectric stack 232 as shown in Figure 5 or dielectric stack 224 as shown in Figure 6, may be deposited on semiconductor formation 210. Examples herein recognize that the presence of metallization layers on a wafer during fabrication may limit the thermal budget associated with the formation of doped region 214.

[0086] For example, the examples herein relating to Figures 5 and 6 feature a fabrication method in which doped region 214 may be formed prior to deposition of a dielectric stack incorporating a metallization layer due to the extended thermal budget associated with the formation of doped region 214.

[0087] In the example of FIG. 5, the doped regions 214 can be formed prior to deposition of the dielectric stack 232 and therefore can be fabricated with an essentially unlimited thermal budget (e.g., without risk of structural and / or performance degradation to previously fabricated metallization features).

[0088] In the example of FIG. 6, doped region 214 may be fabricated as the first feature fabricated in semiconductor formation 210, and therefore may be fabricated with an essentially unlimited thermal budget (e.g., without risk of structural and / or performance degradation to previously fabricated metallization features).

[0089] Each of the examples of Figures 5 and 6 may utilize wafer inversion to facilitate the formation of doped regions 214 prior to deposition of the dielectric stack incorporating the metallization layer.

[0090] In the example of Figure 5, doped area 212 may be formed as the first formed feature of semiconductor formation 210, and then a wafer flip may be used to flip the wafer defining semiconductor formation 210 so that semiconductor formation 210 is in the orientation shown in Figure 5. Doped region 214 may be formed with the wafer defining semiconductor formation 210 in the orientation shown in Figure 5, and dielectric stack 232 incorporating one or more metallization layers 226 may be deposited on semiconductor formation 210 with the wafer defining semiconductor formation 210 held in the orientation shown in Figure 5.

[0091] In the example of Figure 6, doped region 214 may be formed as the first formed feature of semiconductor formation 210, and then a wafer flip may be used to flip the wafer defining semiconductor formation 210 so that semiconductor formation 210 is in the opposite orientation to that shown in Figure 6. Doped area 212 may be formed with the wafer defining semiconductor formation 210 in the opposite orientation shown in Figure 6, and a dielectric stack 224 incorporating one or more metallization layers 226 may be deposited on semiconductor formation 210 with the wafer held in the opposite orientation to that shown in Figure 6.

[0092] Depending on the application, it may be advantageous to delay the creation of doped regions 214 until a later stage following the initial feature creation stage.

[0093] In some examples, it may be advantageous for a given application to create doped areas 212 as the first-created features of semiconductor formation 210, rather than doped regions 214. In one variation of such an example, the wafer defining semiconductor formation 210 may be oriented in a reversed manner from that shown in Figure 6, and doped areas 212 may be created as the first-formed features of the semiconductor formation by a suitable doping process, for example, ion implantation using thermal diffusion.

[0094] With the doped areas 212 formed, the surface of the semiconductor formation 210 can be planarized to a height 1504. A handle wafer (not shown) can be applied to attach to the semiconductor formation 210 at the surface defined by the height 1504 and can hold the semiconductor formation 210 in the reverse orientation (i.e., the orientation shown in FIG. 6). The doped regions 214 can then be formed, for example, by ion implantation using thermal diffusion.

[0095] With the doped regions 214 formed and the semiconductor formation 210 planarized to the top height of the doped regions 214 shown, a second handle wafer (not shown) can be attached to the semiconductor formation 210 at the described top height of the doped regions 214 (height 2144 in FIG. 4). The semiconductor formation 210 can then be subjected to a front side fabrication process dielectric to create a stack 224 incorporating one or more metallization layers 226 that can define, for example, circuitry for readout, digitization, storage, and / or signal processing of signals from the doped areas 212 that define the sensing photodiodes. Thus, with reference to the described variant, another fabrication method is described that uses wafer inversion to facilitate the extension of the thermal budget associated with the formation of the doped regions 214.

[0096] 6, the dielectric stack 224 incorporating one or more metallization layers 226 can be deposited on the semiconductor formation 210 immediately after the formation of the doped area 212 and planarization to the height 1504, and the handle wafer used in creating the doped region 214 can be attached to the height 1506 after the creation of the dielectric stack 224, rather than to the height 1504 before the creation of the dielectric stack 224, which may incorporate one or more metallization layers 226 defining the described circuitry for readout, digitization, storage, and / or signal processing of signals from the doped area 212 defining the sensing photodiode. While such a creation may be advantageous for various applications, the examples herein recognize that the thermal budget associated with the creation of the doped region 214 may be increased by creating the doped region 214 before the creation of the dielectric stack 224, which may incorporate one or more metallization layers 226 defining the described circuitry.

[0097] In some examples, the semiconductor formation 210 and the dielectric stack 224, in which one or more metallization layers 226 defining the described circuitry may be incorporated, may be fabricated on a first and second different wafer, respectively, using the first and second wafers described. Following fabrication on the different respective wafers, the semiconductor formation 210 and the dielectric stack 224 may be bonded together using wafer-scale bonding. FIGS. 11-12 show an example of a detector 200, in which the semiconductor formation 210 and the dielectric stack 224 are bonded together using wafer-scale bonding. As shown by the examples of FIGS. 11 and 12, the detector 200 may include a bonding layer 610 obtained by wafer-scale bonding a first wafer having the semiconductor formation 210 to a second wafer having the dielectric stack 224. In one example, the wafer-scale bonding herein may include fusion bonding. In one example, the scale bonding herein may include low-temperature oxide fusion bonding. Referring to FIG. 12, FIG. 12 shows an example detector 200 in which filter 234 has been eliminated.

[0098] Fabrication methods herein refer to a "front side" and a "back side" with respect to semiconductor formation 210. In one example, the "front side" of semiconductor formation 210 can refer to a first side of semiconductor formation 210 that receives layer deposition to fabricate a dielectric stack on semiconductor formation 210.

[0099] According to an example, the detector 200 may be provided by a solid-state integrated circuit detector, such as a complementary metal oxide semiconductor (CMOS) integrated circuit detector or a charge-coupled device (CCD) integrated circuit detector. The doped area 212 defining the sensing photodiodes may be provided in a two-dimensional array of sensing photodiodes, with rows and columns of sensing photodiodes arranged in a two-dimensional grid pattern, as shown in the cross-sectional top view of FIG. 13 taken along the height of the doped area 212, in an example. In an example, such sensing photodiodes may include at least about 1M sensing photodiodes, or may include fewer sensing photodiodes. The doped area 212 defining the sensing photodiodes may be arranged in a two-dimensional grid of pixel locations. The doped area 212 of FIG. 2 defining the sensing photodiodes has respective pixel locations A1-F4.

[0100] With reference to FIG. 1 , the reaction sites defining the reaction recesses 208 (nanowells) may alternatively be defined by alternative features. Alternative features may include, for example, structural feature variations and / or chemical composition variations. The structural features defining the structural feature variations may form an array in or on the sample support structure 260. Exemplary structural features may include, but are not limited to, nanowells, posts, pads, ridges, channels, and / or layers of multi-layered materials as described herein. Features may have characteristics such as size (e.g., volume, diameter, and depth), shape (e.g., circular, elliptical, triangular, square, polygonal, star-shaped (with any suitable number of vertices), irregular, or with concentric features separated by dielectric material), and distribution (e.g., spatial location of features within the dielectric material, e.g., regularly spaced or periodic locations, or irregularly spaced or non-periodic locations). The cross-section of the feature may be uniform along the length of the feature, but is not necessarily uniform.

[0101] In one embodiment, each respective doped area 212 of the detector 200 defining a sensing photodiode may be associated with and aligned to one or more reaction sites. In one example of alignment, the reaction sites aligned with the doped areas 212 may be located within a boundary bounded by a pair of adjacent width dimension vertically extending planes 2201 and a pair of adjacent depth dimension vertically extending planes 2202 as shown in FIG. 13. The array of sensing photodiodes defined by the doped areas 212 may be located within an area bounded by the adjacent width dimension vertically extending planes 2201 and adjacent depth dimension vertically extending planes 2202, and may define pixel locations A1-F4 as shown in FIG. 13. In one example of association and alignment of the reaction sites and the doped areas, a vertically extending central axis of the reaction site may extend through the associated doped area and / or a vertically extending central axis of the doped area may extend through the reaction site. The associated and aligned reaction sites and doped regions can also be associated and aligned with a particular doped region of the doped regions 214. In one example of associated and aligned doped areas, doped regions, and reaction sites, a vertically extending central axis of a particular doped area can extend through a particular doped region and a particular reaction site, and / or a vertically extending central axis of a particular doped region 214 can extend through a particular doped area 212 and a particular reaction site. In one particular example, as illustrated through several figures, the doped areas 212, the doped regions 214, and respective sets of reaction sites provided by, for example, reaction recesses 208 (nanowells) can share a common respective vertically extending central axis 216. In another example of alignment, the doped area 212 and / or doped region 214 aligned and associated with a particular reaction site, for example provided by a reaction recess 208, may be positioned within a boundary defined by a pair of adjacent width dimension vertically extending planes 2201 and a pair of adjacent depth dimension vertically extending planes 2202, as shown in FIG. 13.

[0102] Each doped area 212 that defines a sensing photodiode corresponds to a pixel location P, which can be referred to as an X-dimension location in combination with a Y-dimension location. X , P Y 13. The sample support structure 260 may similarly be divided into pixel locations, with each pixel location of the sample support structure 260 (FIG. 1) being mapped to a respective pixel location of an array of sensing photodiodes defined by the doped areas 212. Similar to the pixel locations of the defined array of sensing photodiodes defined by the doped areas 212, the pixel locations of the sample support structure 260 may be bounded by adjacent width dimension vertically extending planes 2201 and adjacent depth dimension vertically extending planes 2202. The illustrated pixel locations serve as pixel locations of reaction sites associated with the respective doped areas 212, for example, provided by reaction recesses 208 or alternating features formed on the sample support structure 260 (FIG. 1). The illustrated pixel locations also serve as pixel locations for the respective doped areas 212 and / or doped regions 214 associated with the respective doped areas 212, which may be associated with and aligned with the respective doped areas 212 and / or respective reaction sites, for example, reaction recesses 208.

[0103] Referring to FIG. 1 and FIG. 13, pixel position P X=m , P Y=n A portion of the sample support structure 260 having a common pixel position P X=m , P Y=nIt will be appreciated that the doped areas 212 may include reaction sites provided by reaction recesses 208 located above and aligned with particular doped areas 212 of a defined pixel array having a doped area 212 that defines a sensing photodiode. In the dashed line diagram of FIG. 13, reaction recesses 208 are shown located at each of pixel locations A1-F4, one pixel location being defined for each doped area 212 that defines a sensing photodiode. In some examples, more than one reaction site may be associated with each doped area 212 and each pixel location. In FIG. 13, doped regions 214 are shown in dashed lines representing doped regions 214 that may be located at each of pixel locations A1-F4, one pixel location being associated with each doped region 214.

[0104] Referring again to FIG. 1, the device 100 may include a processing circuit 310. The processing circuit 310 may include, according to an example, one or more processors 3101, a memory 3102, and one or more input / output interfaces 3103. The one or more processors 3101, the memory 3102, and the one or more input / output interfaces may be connected via a system bus 3104. The memory 3102 may include a combination of system memory and storage memory. The memory 3102 may store, according to an example, one or more programs for facilitating the processes described herein. The one or more processors 3101 may execute one or more programs stored in the memory 3102 to facilitate the processes described herein. The memory 3102 may define a computer-readable medium.

[0105] A DNA sequencing process facilitated by the optical energy excitation device 10 will be described with reference to Figures 1, 2, and 14. Referring to Figure 2, a spectral profile correspondence diagram illustrating aspects of the operation of the system 100 is shown. According to one example, the optical energy excitation device 10 can be configured to emit light of first and second distinct wavelengths. As described herein, providing excitation light 101 of first and second distinct wavelength ranges facilitates a dye chemistry DNA sequence reconstruction process in which first and second dyes can be disposed in a fluid within a flow cell 282.

[0106] In the spectral profile correspondence diagram of Figure 2, the spectral profile 1101, shown as a green light spectral profile, is the spectral profile of the excitation light 101 emitted by the light energy excitation device 10. The spectral profile 1501 is the spectral profile of the emission light 501 caused by the fluorescence of the fluorophores excited by the excitation light 101. The spectral profile 1220 is the transmission profile (detection band) of the doped area 212, according to one example. Although the spectral profile correspondence diagram of Figure 2 is intended to represent general features common to several examples, it will be understood that the variations in the illustrated spectral profiles are common.

[0107] In one embodiment, the excitation light 101 may generally include a blue light spectral profile (not shown) in addition to the green light spectral profile, and the system 100 is switchable between (a) a mode in which the green light spectral profile is active and the blue light spectral profile is inactive, and (b) a mode in which the blue light spectral profile is active and the green light spectral profile is inactive. In other examples, there may be different combinations of excitation light 101 and emission light 501. In one example, the spectral profile 1101 of the excitation light 101 may be characterized by a central wavelength of a blue light wavelength range, and the spectral profile of the emission light 501 may be characterized by a central wavelength of a green wavelength range.

[0108] Examples herein refer to the spectral profile correspondence diagram of FIG. 2 , in which the processing circuit 310 determines that a first fluorophore is attached to the sample 502 ( FIG. 1 ) based on (a) the fluorescence sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by one or more green emitting light sources and the fluorescence not sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by one or more blue emitting light sources, and (b) the fluorescence sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by one or more green emitting light sources and the fluorescence not sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by one or more blue emitting light sources. It is recognized that the optical fiber 503 may be configured to (a) determine that a second fluorophore is attached to the sample 502 based on fluorescence that is not sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by the emitting light source, and (b) determine that a third fluorophore is attached to the sample 502 based on fluorescence that is sensed by the doped area 212 defined by the sensing photodiode under excitation limited to excitation by one or more green emitting light sources and fluorescence that is sensed by the doped area 212 also defined by the sensing photodiode under excitation limited to excitation by one or more blue emitting light sources. The processing circuitry 310 can, for example, use a decision logic data structure shown in the decision logic table of Table 1 that maps the presence of fluorophores to nucleotide types to identify which fluorophores are attached to the sample and can determine the nucleotide types, e.g., A, C, T, and G, present in the fragment of the DNA strand providing the sample 502, and the identified nucleotides Nucleotide-Nucleotide4 are nucleotides of nucleotide types A, C, T, and G (the particular mapping is based on the test setup parameters).

[0109] [Table 1]

[0110] The processing circuitry 310 can perform a process to assist in DNA sequence reconstruction in multiple cycles. In each cycle, a different portion of a DNA fragment can be subjected to a sequencing process to determine the nucleotide type associated with the fragment, e.g., A, C, T, or G, using a determination data structure, such as the determination data structure shown in Table 1. An embodiment of a process that can be performed by the processing circuitry 310 for use in performing DNA sequence reconstruction using the light energy excitation device 10 is described in the flow diagram of FIG.

[0111] At block 1802, the processing circuit 310 can clear the flow cell 282, which means that the processing circuit 310 can remove fluid from the flow cell 282 that was used during the previous cycle. At block 1804, the processing circuit 310 can load the flow cell 282 with a fluid having multiple fluorophores, for example a first and a second fluorophore, or a first, second, and third fluorophore.

[0112] In block 1806, the processing circuit 310 can read out a signal from the doped area 212 exposed to the excitation of the active first wavelength range. In block 1806, the processing circuit 310 can control the optical energy excitation device 10 so that during the exposure period of the doped area 212, the optical energy excitation device 10 emits excitation light limited to excitation by one or more green light sources. In block 1806, the processing circuit 310 can energize each of the one or more green emitting light sources of the optical energy excitation device 10 while maintaining each of the one or more blue emitting light sources of the optical energy excitation device 10 in a non-energized state during the exposure period of the doped area 212. Once the optical energy excitation device 10 is controlled as described above so that the green light sources are turned on and the blue light sources are turned off during the exposure period of the doped area 212, the processing circuit 310 can read out a first signal in block 1806 from the doped area 212 exposed to excitation limited to excitation by one or more green light sources as described herein.

[0113] In block 1808, the processing circuit 310 can read out a signal from the doped area 212 exposed to the active second wavelength range excitation. In block 1808, the processing circuit 310 can control the optical energy excitation device 10 to emit excitation light limited to excitation by the one or more blue light sources of the optical energy excitation device 10 during the exposure period of the array of sensing photodiodes defined by the doped area 212. In block 1808, the processing circuit 310 can energize each of the one or more blue emitting light sources of the optical energy excitation device 10 while maintaining each of the one or more green emitting light sources of the optical energy excitation device 10 in a non-energized state during the exposure period of the array of sensing photodiodes defined by the doped area 212. When the optical energy excitation device 10 is controlled as described above such that the blue light source is on and the green light source is off during the exposure period of the doped area 212, the processing circuit 310 can read out a second signal from the doped area 212 exposed to excitation limited to excitation by the one or more blue light sources as described herein in block 1808. During each of the described exposure periods of the array of sensing photodiodes defined by the doped area 212 (array of doped areas 212) according to one example, the optical energy excitation device 10 can commonly and simultaneously emit excitation light 101 to each reaction site, e.g., each reaction recess 208 of the detector 200.

[0114] In block 1810, the processing circuit 310 for the current cycle may process the first signal read in block 1806 and the second signal read in block 1808 to determine the nucleotide type of the DNA fragment undergoing testing during the current cycle, for example, using a determination data structure such as that set forth in Table 2, according to one example. The processing circuit 310 may perform the described nucleotide identification process described with reference to the flow diagram of FIG. 14 for each cycle of the DNA sequencing process until nucleotide identification has been performed for each scheduled cycle.

[0115] The processing circuitry 310 can be configured to perform a wide range of tests to test the operation of the system 100. The processing circuitry 310 can perform calibration tests in which the operation of the optical energy excitation device 10 and the detector 200 are tested. In such an example, the processing circuitry 310 can be configured to selectively energize different light sources during an exposure period of an array of sensing photodiodes defined by the doped areas 212 (array of doped areas 212) and can examine signals read out from the pixel array of the sensing photodiodes during the exposure period. The method may include selectively energizing a first light source (e.g., green emitting) during a first exposure period of the array of sensing photodiodes while the second (blue emitting) light source and a third (e.g., red emitting) light source are maintained in a de-energized state, selectively energizing the second light source during a second exposure period of the array of sensing photodiodes while the first light source and the third light source are maintained in a de-energized state, and selectively energizing the third light source during a third exposure period of the array of sensing photodiodes while the first light source and the second light source are maintained in a de-energized state.

[0116] Described herein with reference to various figures is a support structure 260 defining a detector surface 206 configured to support a biological or chemical sample; a plurality of spaced apart doped areas 212 formed in a semiconductor formation 210, the semiconductor formation 210 receiving excitation light 101 and emission light 510 from the detector surface 206, the plurality of spaced apart doped areas 212 defining photodiodes; and a plurality of spaced apart doped regions 214 formed in the semiconductor formation 210, the plurality of spaced apart doped areas 212 defining photodiodes. a plurality of spaced apart doped regions 214, each of which is associated with a respective one of the doped areas 212, each of which is disposed in a receiving path of the excitation light 101 and the emission light 501 intermediate the detector surface 206 and each of the doped areas 212, each of which is disposed in a receiving path of the excitation light 101 and the emission light 501 intermediate the detector surface 206 and each of the doped areas 212, each of which is formed in the semiconductor formation 210 such that photons of the excitation light 101 and the emission light 501 are absorbed in each of the doped regions 214. each doped region 214 defines a light incidence surface of the semiconductor formation 210, each doped region 214 has a junction depth greater than an absorption depth of a central wavelength of the excitation light 101, a junction depth of each doped region 214 is less than an absorption depth of a central wavelength of the emission light 501, the plurality of spaced apart doped areas 212 and the plurality of spaced apart doped regions 214 are separated by a vertical spacing distance, and the plurality of spaced apart doped areas 212 and the plurality of spaced apart doped regions 214 define a light incidence surface of the semiconductor formation 210, each doped region 214 has a junction depth greater than an absorption depth of a central wavelength of the excitation light 101, a junction depth of each doped region 214 is less than an absorption depth of a central wavelength of the emission light 501, 2 have a common top height (height 2148 in FIG. 4 ), the plurality of spaced apart doped regions 214 have a common bottom height (height 2146 in FIG. 4 ), the semiconductor formation 210 is undoped between the common top height of the plurality of spaced apart doped areas and the common bottom height of the plurality of spaced apart doped regions, each one of the plurality of spaced apart doped regions 214 is aligned with each one of the doped areas 212, and the alignment of each one of the plurality of spaced apart doped regions to each one of the doped areas isThe device is characterized by a vertically extending central axis 216 of each of the doped areas 212 extending through each of the doped regions 214, and includes a sample support reaction site (e.g., a reaction recess 208) formed on a support structure 260 defining a detector surface 206 associated with each of the plurality of spaced apart partially doped areas 212, and an optical energy excitation apparatus 10 for illuminating the reaction site, the device being controlled such that the optical energy excitation apparatus 10 simultaneously directs excitation light 101 to a plurality of adjacent ones of the reaction sites for simultaneous excitation of samples respectively supported by a plurality of adjacent ones of the sample support reaction sites.

[0117] Further details of the system 100 according to one example are described with reference to Table 2.

[0118] [Table 2]

[0119] A small sample of combinations described herein include the following: (A1) A device comprising: a detector surface including reaction sites for supporting a biological or chemical sample; a plurality of spaced apart doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes; and a plurality of spaced apart doped regions formed in the semiconductor formation, each one of the plurality of spaced apart doped regions associated with a respective one of the doped areas, each one of the doped regions disposed in a receiving path of the excitation light and emission light intermediate the detector surface and each one of the doped areas, each doped region of the plurality of spaced apart doped regions generating a respective electric field that influences a direction of travel of electrons generated in the respective doped region as a result of absorption of photons of the excitation light in the respective doped region. (A2) The device of A1, wherein each doped region has a junction depth greater than an absorption depth for a central wavelength of the excitation light. (A3) The device according to A1 or A2, wherein each doped region has a junction depth smaller than an absorption depth of the central wavelength of the emitted light. (A4) The device according to any one of A1 to A3, wherein each doped region defines a light incident surface of the semiconductor formation. (A5) The device according to any one of A1 to A4, wherein each doped region has a junction depth larger than an absorption depth of the central wavelength of the excitation light, and the junction depth of each doped region is smaller than the absorption depth of the central wavelength of the emitted light. (A6) The device according to any one of A1 to A5, wherein the junction depth of each junction defined by each doped region is configured such that the proportion of photons at the central wavelength of the emitted light that are absorbed at a height of the semiconductor formation below each junction is at least about twice the proportion of photons at the central wavelength of the excitation light that are absorbed at a height of the semiconductor formation below each junction.(A7) The device according to any one of A1 to A6, wherein the junction depth of each junction defined by each doped region is configured such that the percentage of photons at the central wavelength of the emission light absorbed at the height of the semiconductor formation below each junction is about 20 times or more than the percentage of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below each junction. (A8) The device according to any one of A1 to A7, wherein the junction depth of each junction defined by each doped region is configured such that the percentage of photons at the central wavelength of the emission light absorbed at the height of the semiconductor formation below each junction is about 50 times or more than the percentage of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below each junction. (A9) The device according to any one of A1 to A8, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and the emission light in each doped region. (A10) The device according to any one of A1 to A9, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and emission light in the respective doped region in a direction towards the light incidence surface of the semiconductor formation. (A11) The device according to any one of A1 to A10, wherein each doped region is dimensioned to feature a junction depth longer than an absorption depth of light in a blue wavelength band, the depth being shorter than an absorption depth of light in a red wavelength band. (A12) The device according to any one of A1 to A11, wherein each doped region is dimensioned to feature a junction depth longer than an absorption depth of light in a green wavelength band, the depth being shorter than an absorption depth of light in a red wavelength band. (A13) The device according to any one of A1 to A12, wherein each doped region is dimensioned such that an absorption depth of photons of excitation light of the first wavelength is smaller than the junction depth of the respective doped region.(A14) The device according to any one of A1 to A13, wherein the respective doped regions include a first set of respective doped regions having a first junction depth and a second set of respective doped regions having a second junction depth, the second junction depth being smaller than the first junction depth. (A15) The device according to any one of A1 to A14, wherein the respective doped regions include a first set of respective doped regions having a first junction depth configured for wavelength separation of light in a green wavelength band and a second set of respective doped regions having a second junction depth, the second junction depth being smaller than the first junction depth and configured for wavelength separation of light in a blue wavelength band. (A16) The device according to any one of A1 to A15, wherein the semiconductor formation includes a vertically extending deep trench isolation formation separating the respective doped regions, the doped regions of the plurality of spaced apart doped regions being in laterally contact with the first and second ones of the vertically extending deep trench isolation formations. (A17) The device of any one of A1 to A16, wherein each one of the plurality of spaced apart doped regions is aligned with each one of the doped regions. (A18) The device of any one of A1 to A17, wherein each one of the plurality of spaced apart doped regions is aligned with each one of the doped areas, and the alignment of each one of the plurality of spaced apart doped regions with each one of the doped areas is characterized by a vertically extending central axis of each one of the doped areas extending through each one of the doped regions. (A19) The device of any one of A1 to A18, wherein the plurality of spaced apart doped areas and the plurality of spaced apart doped regions are separated by a vertical spacing distance, the plurality of spaced apart doped areas have a common top height, the plurality of spaced apart doped regions have a common bottom height, and the semiconductor formation is undoped between the common top height of the plurality of spaced apart doped areas and the common bottom height of the plurality of spaced apart doped regions.(A20) The device according to any one of A1 to A19, wherein each of the reaction sites is associated with a respective one of a plurality of spaced apart doped areas, and the device includes an optical energy excitation device for illuminating the site of the reaction site. (A21) The device according to any one of A1 to A20, wherein the device includes a support structure defining a detector surface, wherein each of the reaction sites is associated with a respective one of a plurality of spaced apart doped areas, and the device includes an optical energy excitation device for illuminating the site of the reaction site, and the device is controlled to simultaneously direct excitation light to adjacent ones of the reaction sites for simultaneous excitation of samples supported by adjacent ones of the reaction sites respectively. (A22) The device according to any one of A1 to A21, wherein each of the reaction sites is associated with a respective one of a plurality of spaced apart doped areas, and the device includes an optical energy excitation device for illuminating the site of the reaction site, and the device is controlled to simultaneously direct excitation light to substantially all of the reaction sites on the detector surface for simultaneous excitation of samples supported by substantially all of the reaction sites on the detector surface respectively. (A23) The device of any one of A1-A22, wherein each of the plurality of spaced apart doped regions is aligned with each of the plurality of spaced apart doped regions, the alignment of each of the plurality of spaced apart doped regions being characterized by a vertically extending central axis of each of the doped areas extending through each of the doped regions. (A24) The device of A1, wherein each doped region has a junction depth greater than an absorption depth of a central wavelength of the excitation light, and the junction depth of each doped region is less than an absorption depth of a central wavelength of the emission light. (A25) The device of A1, wherein the junction depth of each junction defined by each doped region is configured such that a proportion of photons at the central wavelength of the emission light that are absorbed in a height of the semiconductor formation below the respective junction is about 20 times or more greater than a proportion of photons at the central wavelength of the excitation light that are absorbed in a height of the semiconductor formation below the respective junction.(A26) The device of A1, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and emission light in the respective doped region. (A27) The device of A1, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and emission light in the respective doped region in a direction toward the light incidence surface of the semiconductor formation. (A28) The device of A1, wherein each doped region includes a first set of respective doped regions having a first junction depth and a second set of respective doped regions having a second junction depth, the second junction depth being less than the first junction depth. (A29) The device of A1, wherein each one of the reaction sites is associated with a respective one of a plurality of spaced apart doped areas, the device including an optical energy excitation device for illuminating the site of the reaction site, the device being controlled to simultaneously direct excitation light to a plurality of adjacent ones of the reaction sites for simultaneous excitation of samples respectively supported by a plurality of adjacent ones of the reaction sites.(A30) each doped region defines a light incidence surface of the semiconductor formation, each doped region has a junction depth greater than an absorption depth of a central wavelength of the excitation light, and each doped region has a junction depth less than an absorption depth of a central wavelength of the emission light, the plurality of spaced apart doped areas and the plurality of spaced apart doped regions are separated by a vertical spacing distance, the plurality of spaced apart doped areas have a common top height, the plurality of spaced apart doped regions have a common bottom height, the semiconductor formation is undoped between the common top heights of the plurality of spaced apart doped areas and the common bottom heights of the plurality of spaced apart doped regions, and each one of the plurality of spaced apart doped regions is aligned with each one of the doped areas. The device of claim 1, wherein the alignment of each one of the plurality of spaced apart doped regions with each one of the doped areas is characterized by a vertically extending central axis of each one of the doped areas extending through each one of the doped regions, each one of the reaction sites of the detector surface is associated with a respective one of the plurality of spaced apart partially doped areas, the device includes an optical energy excitation device for illuminating a portion of the reaction site, the device being controlled such that the optical energy excitation device simultaneously directs excitation light to a plurality of adjacent ones of the reaction sites for simultaneous excitation of sample respectively supported by a plurality of adjacent ones of the reaction sites. (B1) A device comprising: a detector surface for supporting a biological or chemical sample; an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes; and a doped region formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and the doped area of ​​the array of doped areas, the doped region configured to influence the direction of travel of electrons generated in the doped region as a result of photon absorption. (B2) The device of B1, comprising an array of doped regions formed in a semiconductor formation, the array of doped regions comprising a doped region, each of the doped regions defining the array of doped regions being associated with a respective doped area of ​​the array of doped areas. (B3) The device of B1, comprising an array of doped regions formed in a semiconductor formation, the array of doped regions comprising a doped region, each of the doped regions defining the array of doped regions being associated with a respective doped area of ​​the array of doped areas, each of the doped regions defining the array of doped regions being disposed in a receiving path of the excitation light and the emission light intermediate a detector surface and a respective doped area of ​​the array of doped areas. (B4) The device of any one of B1 to B3, wherein the doped regions generate an electric field that influences a direction of travel of electrons generated in the doped regions as a result of photon absorption. (B5) The device according to any one of B1 to B4, wherein the doped regions are configured to cause drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light in the doped regions. (B6) The device according to any one of B1 to B5, wherein the doped regions are configured to cause drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light and the emission light in the respective doped regions in a direction towards the light incidence surface of the semiconductor formation. (B7) The device according to any one of B1 to B6, wherein the doped regions have a junction depth longer than the absorption depth of the longest wavelength of the blue wavelength band, the depth being shorter than the absorption depth of the longest wavelength of the red wavelength band. (B8) The device according to any one of B1 to B7, wherein the doped regions are dimensioned to feature a depth longer than the absorption depth of the longest wavelength of the green wavelength band, the depth being shorter than the absorption depth of the longest wavelength of the red wavelength band. (B9) The device according to any one of B1 to B8, wherein each doped region has a junction depth smaller than the absorption depth of the central wavelength of the emission light. (B10) A device described in any one of B1 to B9, wherein the doped region has a junction depth greater than the absorption depth of the central wavelength of the excitation light, and the doped region is configured to have a junction depth less than the absorption depth of the central wavelength of the emission light.(B11) The device according to any one of B1 to B10, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is at least about twice the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (B12) The device according to any one of B1 to B11, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is at least about 20 times the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (B13) The device according to any one of B1 to B12, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is at least about 50 times the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (B14) The device according to any one of B1 to B3, wherein the doped regions are configured to cause drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light in the doped regions. (B15) The device according to any one of B1 to B3, wherein the doped regions are configured to cause drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light and the emission light in the respective doped regions in a direction towards the light incidence surface of the semiconductor formation. (B16) The device according to any one of B1 to B3, wherein the doped regions have a junction depth longer than the absorption depth of the longest wavelength of the blue wavelength band, the depth being shorter than the absorption depth of the longest wavelength of the red wavelength band. (B17) The device according to any one of B1 to B3, wherein the doped regions are dimensioned to feature a depth longer than the absorption depth of the longest wavelength of the green wavelength band, the depth being shorter than the absorption depth of the longest wavelength of the red wavelength band. (B18) The device according to any one of B1 to B3, wherein each doped region has a junction depth smaller than the absorption depth of the central wavelength of the emission light. (B19) A device according to any one of B1 to B3, wherein the doped region has a junction depth greater than the absorption depth of the central wavelength of the excitation light, and the doped region is configured to have a junction depth less than the absorption depth of the central wavelength of the emission light.(B20) The device according to any one of B1 to B3, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is about 20 times or more than the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction.(B21) The device according to any one of B1 to B3, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is about 50 times or more than the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (C1) A method comprising: forming an array of doped regions in a semiconductor formation, forming an array of doped regions in a semiconductor formation, each doped region of the array of doped regions being associated with a respective doped area of ​​the array of doped areas, and forming a detector surface, the semiconductor formation configured to receive excitation light and emission light from the detector surface, each doped region being formed in the semiconductor formation in a receiving path of the excitation light and emission light from the detector surface. (C2) A method according to C1, wherein each doped region is configured to affect a direction of travel of electrons generated therein as a result of photon absorption. (C3) A method according to C1 or C2, wherein the method comprises using a front side process to create one or more filters above the semiconductor formation between the semiconductor formation and the array of doped areas, the one or more filters blocking illumination of the excitation light and allowing light of the emission light to reach the array of doped areas. (C4) The method of any one of C1 to C3, wherein the method includes creating one or more filters above the semiconductor formation, using backside processing, between the semiconductor formation and the array of doped areas, the one or more filters blocking illumination of the excitation light and allowing light of the emission light to reach the array of doped areas.(C5) The method of any one of C1-C4, wherein the method comprises etching a plurality of trenches from a front side to a back side of the semiconductor formation and filling the plurality of trenches with a dielectric material to define a vertically extending deep trench isolation (DTI) formation in the semiconductor formation that extends vertically between respective ones of the doped areas of the array of doped areas.(C6) The method of any one of C1-C5, wherein the method comprises etching a plurality of trenches from a back side to a front side of the semiconductor formation and filling the plurality of trenches with a dielectric material to define a vertically extending deep trench isolation (DTI) formation in the semiconductor formation that extends vertically between respective ones of the doped areas of the array of doped areas. (C7) A method according to any one of C1 to C6, wherein the method includes fabricating a vertically extending deep trench isolation (DTI) formation in a semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas, and forming the array of doped regions in the semiconductor formation includes forming respective ones of the doped regions such that each one of the doped regions is in laterally contact with first and second ones of the DTI formations. (C8) The method of any one of C1-C7, wherein forming the array of doped regions in the semiconductor formation comprises forming laterally extending doped regions extending laterally opposite a plurality of doped areas of the array of doped areas such that a central axis of each of the doped regions defining the array of doped regions extends commonly through the laterally extending doped region, etching the laterally extending doped region to define a trench, and filling the trench with a dielectric material to define a DTI formation isolating the laterally extending doped region from each of the doped regions defining the array of doped regions. (C9) The method of any one of C1-C8, wherein the method comprises depositing a dielectric stack on the semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for reading out a signal from the array of doped areas.(C10) The method of any one of C1 to C9, wherein the method comprises depositing a dielectric stack on a semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for readout of a signal from the array of doped areas, and the method uses wafer flipping to facilitate formation of the doped regions prior to deposition of the dielectric stack, due to the expansion of the thermal budget associated with the formation of the doped regions.(C11) The method of any one of C1 to C10, wherein the method comprises depositing a dielectric stack on a second wafer separate from the wafer defining the semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for readout of a signal from the array of doped areas, and the method uses wafer scale bonding of the second wafer to the wafer to bond the dielectric stack to the semiconductor formation, due to the expansion of the thermal budget associated with the formation of the doped regions. (C12) The method of any one of C1-C11, wherein the method includes: fabricating a semiconductor formation using a first wafer; separately fabricating a dielectric stack using a second wafer, the dielectric stack incorporating one or more metallization layers defining a readout circuit for reading out signals from the array of doped areas; and wafer-scale bonding the first wafer to the second wafer to integrally bond the dielectric stack to the semiconductor formation. (C13) The method of any one of C1-C12, wherein the method includes fabricating vertically extending deep trench isolation (DTI) formations in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas, and forming the array of doped regions in the semiconductor formation includes forming respective ones of the doped regions such that each one of the doped regions defining the array of doped regions laterally contacts an adjacent one of the DTI formations. (C14) The method of C1 or C2, wherein the method includes fabricating one or more filters above the semiconductor formation, using backside processing, between the semiconductor formation and the array of doped areas, the one or more filters blocking illumination of the excitation light and allowing light of the emission light to reach the array of doped areas.(C15) A method as in C1 or C2, wherein the method includes etching a plurality of trenches from a front side to a back side of the semiconductor formation and filling the plurality of trenches with a dielectric material to define vertically extending deep trench isolation (DTI) formations in the semiconductor formation that extend vertically between respective ones of the doped areas of the array of doped areas. (C16) A method includes etching a plurality of trenches from a back side to a front side of the semiconductor formation and filling the plurality of trenches with a dielectric material to define vertically extending deep trench isolation (DTI) formations in the semiconductor formation that extend vertically between respective ones of the doped areas of the array of doped areas. (C17) The method of any one of C1 to C2, wherein the method includes fabricating a vertically extending deep trench isolation (DTI) formation in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas, and forming the array of doped regions in the semiconductor formation includes forming respective ones of the doped regions such that each one of the doped regions laterally contacts first and second ones of the DTI formations. (C18) The method of C1 or C2, wherein forming the array of doped regions in the semiconductor formation includes forming laterally extending doped regions extending laterally opposite a plurality of doped areas of the array of doped areas such that central axes of each of the doped regions defining the array of doped regions extend commonly through the laterally extending doped region, etching the laterally extending doped region to define a trench, and filling the trench with a dielectric material to define a DTI formation isolating the laterally extending doped region from each of the doped regions defining the array of doped regions. (C19) The method of C1 or C2, wherein the method includes depositing a dielectric stack on the semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for reading out a signal from the array of doped areas. (C20) The method of C1 or C2, wherein the method includes depositing a dielectric stack on a semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for readout of a signal from the array of doped areas, and the method uses wafer flipping to facilitate formation of the doped regions prior to deposition of the dielectric stack, due to the expansion of the thermal budget associated with the formation of the doped regions.(C21) The method of C1 or C2, wherein the method includes depositing a dielectric stack on a second wafer separate from the wafer defining the semiconductor formation, the dielectric stack incorporating a metallization layer defining a circuit for readout of a signal from the array of doped areas, and the method uses wafer scale bonding of the second wafer to the wafer to bond the dielectric stack to the semiconductor formation, due to the expansion of the thermal budget associated with the formation of the doped regions.(C22) The method of C1 or C2, wherein the method includes fabricating a semiconductor formation using a first wafer, separately fabricating a dielectric stack using a second wafer, the dielectric stack incorporating one or more metallization layers defining readout circuitry for reading out signals from the array of doped areas, and wafer-scale bonding the first wafer to the second wafer to integrally bond the dielectric stack to the semiconductor formation.(C23) The method of C1 or C2, wherein the method includes fabricating vertically extending deep trench isolation (DTI) formations in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas, and forming the array of doped regions in the semiconductor formation includes forming respective ones of the doped regions such that each one of the doped regions defining the array of doped regions laterally contacts an adjacent one of the DTI formations. (D1) A device comprising: a support structure defining a detector surface configured to support a biological or chemical sample, a plurality of spaced apart doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes, and a plurality of spaced apart doped regions formed in the semiconductor formation, each one of the plurality of spaced apart doped regions associated with a respective one of the doped areas, each one of the doped regions disposed in a receiving path of the excitation light and emission light intermediate the detector surface and each one of the doped areas, each doped region of the plurality of spaced apart doped regions generating a respective electric field that influences a direction of travel of electrons generated in the respective doped region as a result of absorption of photons of the excitation light and emission light in the respective doped region. (D2) The device of D1, wherein each doped region has a junction depth greater than an absorption depth of a central wavelength of the excitation light.(D3) The device according to D1 or D2, wherein each doped region has a junction depth smaller than the absorption depth of the central wavelength of the emitted light. (D4) The device according to any one of D1 to D3, wherein each doped region has a junction depth larger than the absorption depth of the central wavelength of the excitation light, and each doped region has a junction depth smaller than the absorption depth of the central wavelength of the emitted light. (D5) The device according to any one of D1 to D4, wherein the junction depth of each junction defined by each doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below each junction is about 2 times or more than the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below each junction. (D6) The device according to any one of D1 to D4, wherein the junction depth of each junction defined by each doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below each junction is about 20 times or more than the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below each junction. (D7) The device of any one of D1 to D4, wherein the junction depth of each junction defined by each doped region is configured such that the percentage of photons at the central wavelength of the emission light absorbed at a height of the semiconductor formation below each junction is about 50 times or more than the percentage of photons at the central wavelength of the excitation light absorbed at a height of the semiconductor formation below each junction. (D8) The device of any one of D1 to D7, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and emission light in each doped region. (D9) The device of any one of D1 to D8, wherein each doped region is configured to cause drift of electrons generated in each doped region as a result of absorption of photons of the excitation light and emission light in each doped region in a direction toward the light incident surface of the semiconductor formation.(D10) The device according to any one of D1 to D9, wherein each doped region is dimensioned to feature a junction depth longer than the absorption depth of light in the blue wavelength band, the depth being shorter than the absorption depth of light in the red wavelength band. (D11) The device according to any one of D1 to D10, wherein each doped region is dimensioned to feature a junction depth longer than the absorption depth of light in the green wavelength band, the depth being shorter than the absorption depth of light in the red wavelength band. (D12) The device according to any one of D1 to D11, wherein each doped region is dimensioned such that the absorption depth of photons of excitation light of the first wavelength is smaller than the junction depth of the respective doped region. (D13) The device according to any one of D1 to D12, wherein each doped region includes a first set of respective doped regions having a first junction depth and a second set of respective doped regions having a second junction depth, the second junction depth being smaller than the first junction depth. (D14) The device of any one of D1-D13, wherein the respective doped regions include a first set of respective doped regions configured for wavelength separation of light in the green wavelength band having a first junction depth and a second set of respective doped regions having a second junction depth, the second junction depth being less than the first junction depth and configured for wavelength separation of light in the blue wavelength band. (D15) The device of any one of D1-D14, wherein the semiconductor formation includes a vertically extending deep trench isolation formation separating the respective doped regions, the doped regions of the plurality of spaced apart doped regions being in laterally contact with first and second ones of the vertically extending deep trench isolation formations.(E1) A device comprising: a support structure defining a detector surface configured to support a biological or chemical sample; an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes; and a doped region formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and the doped area of ​​the array of doped areas, the doped region configured to influence a direction of travel of electrons generated in the doped region as a result of photon absorption. (E2) The device of E1, comprising an array of doped regions formed in the semiconductor formation, the array of doped regions including doped regions, each one of the doped regions defining the array of doped regions being associated with a respective one of the doped areas of the array of doped areas. (E3) The device of E1, comprising an array of doped regions formed in a semiconductor formation, the array of doped regions including a doped region, each of the doped regions defining the array of doped regions being associated with a respective doped area of ​​the array of doped areas, and each of the doped regions defining the array of doped regions being disposed in a receiving path of the excitation light and the emission light intermediate the detector surface and the respective doped area of ​​the array of doped areas. (E4) The device of any one of E1-E3, wherein the doped regions generate an electric field that influences a direction of travel of electrons generated in the doped regions as a result of photon absorption. (E5) The device of any one of E1-E4, wherein the doped regions are configured to induce drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light and the emission light in the doped regions. (E6) A device described in any one of E1 to E5, wherein the doped regions are configured to cause drift of electrons generated in the doped regions as a result of absorption of photons of the excitation light and emission light in the respective doped regions in a direction toward the light incident surface of the semiconductor formation.(E7) The device of any one of E1 to E6, wherein the doped regions have a junction depth greater than the absorption depth for the longest wavelength of the blue wavelength band, and the depth is less than the absorption depth for the longest wavelength of the red wavelength band. (E8) The device of any one of E1 to E7, wherein the doped regions are dimensioned to feature a depth greater than the absorption depth for the longest wavelength of the green wavelength band, and the depth is less than the absorption depth for the longest wavelength of the red wavelength band. (E9) The device of any one of E1 to E8, wherein each doped region has a junction depth less than the absorption depth for a central wavelength of the emitted light. (E10) The device of any one of E1 to E9, wherein the doped regions have a junction depth greater than the absorption depth for a central wavelength of the excitation light, and the doped regions are configured to have a junction depth less than the absorption depth for the central wavelength of the emitted light. (E11) The device of any one of E1 to E10, wherein the junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is at least about two times the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (E12) The junction depth of the doped region is configured such that the proportion of photons at the central wavelength of the emitted light absorbed at the height of the semiconductor formation below the junction is at least about 20 times the proportion of photons at the central wavelength of the excitation light absorbed at the height of the semiconductor formation below the junction. (E13) The device of any one of E1-E10, wherein the junction depth of the doped regions is configured such that a percentage of photons at a central wavelength of the emission light absorbed at a height of the semiconductor formation below the junction is greater than or equal to about 50 times the percentage of photons at a central wavelength of the excitation light absorbed at a height of the semiconductor formation below the junction. (F1) A method comprising: forming an array of doped regions in a semiconductor formation, forming an array of doped regions in the semiconductor formation, each doped region of the array of doped regions being associated with a respective doped area of ​​the array of doped areas, and providing a detector surface, the semiconductor formation configured to receive excitation light and emission light from the detector surface, each doped region formed in the semiconductor formation in a receiving path of the excitation light and emission light from the detector surface. (F2) The method of F1, wherein each doped region is configured to affect a direction of travel of electrons generated therein as a result of photon absorption. (F3) The method according to F1 or F2, wherein the method comprises creating one or more filters above the semiconductor formation between the semiconductor formation and the array of doped areas using a front side process, the one or more filters blocking illumination of the excitation light and allowing light of the excitation light to reach the array of doped areas. (F4) The method according to any one of F1 to F3, wherein the method comprises creating one or more filters above the semiconductor formation between the semiconductor formation and the array of doped areas using a back side process, the one or more filters blocking illumination of the excitation light and allowing light of the excitation light to reach the array of doped areas. (F5) The method according to any one of F1 to F4, wherein the method comprises etching a plurality of trenches from the front side to the back side of the semiconductor formation, and filling the plurality of trenches with a dielectric material to define vertically extending deep trench isolation (DTI) formations in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas.(F6) The method of any one of F1-F5, wherein the method includes etching a plurality of trenches from a backside to a frontside of the semiconductor formation, and filling the plurality of trenches with a dielectric material to define a vertically extending deep trench isolation (DTI) formation in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas.(F7) The method of any one of F1-F6, wherein the method includes creating a vertically extending deep trench isolation (DTI) formation in the semiconductor formation extending vertically between respective ones of the doped areas of the array of doped areas, and forming the array of doped regions in the semiconductor formation includes forming each one of the doped regions such that each one of the doped regions is in lateral contact with first and second ones of the DTI formations. (F8) A method according to any one of F1 to F7, wherein forming the array of doped regions in the semiconductor formation includes forming an extended doped region extending opposite a plurality of doped areas of the array of doped areas, etching the extended doped region to define a trench, and filling the trench with a dielectric material to define a DTI formation isolating the extended doped region from each of the doped regions defining the array of doped regions.

[0120] The terms "substantially," "approximately," "about," "relatively," or other such similar terms, which may be used throughout this disclosure, including the claims, are used to describe and take into account small variations from a reference or parameter, such as due to variations in processing. Such small variations also include zero-point variations from a reference or parameter. For example, they can refer to ±10% or less, such as ±5% or less, such as ±2% or less, such as ±1% or less, such as ±0.5% or less, such as ±0.2% or less, such as ±0.1% or less, such as ±0.05% or less. As used herein, "substantially," "approximately," "about," "relatively," or other such similar terms can also refer to no variation, i.e., ±0%.

[0121] Numerical values, as well as other values ​​recited herein, whether expressly stated or inherently derived by the discussion of this disclosure, are intended to be modified by the term "about". As used herein, the term "about" defines the numerical boundaries of the modified value, including, but not limited to, tolerances and values ​​up to and including the numerical value so modified. That is, numerical values ​​include the actual value explicitly stated, as well as other values ​​that are or may be decimals, fractions, or other multiples of the actual value set forth and / or described in this disclosure.

[0122] It should be understood that all combinations of the foregoing concepts and further concepts, described in more detail below (provided such concepts are not mutually inconsistent), are considered to be part of the subject matter disclosed herein. In particular, all combinations of the subject matter of the claims appearing at the end of this disclosure are considered to be part of the subject matter disclosed herein. It should also be understood that the terms expressly used in this specification and which may also appear in any disclosures incorporated by reference are to be given the meaning most consistent with the particular concepts disclosed herein.

[0123] This written description uses examples to disclose the subject matter and enables any person skilled in the art to practice the subject matter, including making and using any device or system and performing any incorporated methods. The patentable scope of the subject matter is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they include structural elements that do not differ from the literal words of the claims, or if they include equivalent structural elements that have insignificant differences from the literal words of the claims.

[0124] It should be understood that the above description is intended to be illustrative and not limiting. For example, the above-described examples (and / or aspects thereof) can be used in combination with each other. In addition, many modifications can be made to adapt a particular situation or material to the teachings of the various examples without departing from their scope. The dimensions and types of materials described herein are intended to define the parameters of the various examples, but they are by no means limiting and are merely examples. Numerous other examples will become apparent to those skilled in the art upon review of the above description. The scope of the various examples should therefore be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled. In the appended claims, the terms "including" and "in which" are used as the plain English equivalents of the respective terms "comprising" and "wherein." Furthermore, in the following claims, the terms "first," "second," and "third," etc., are used merely as labels and are not intended to impose numerical requirements on their objects. As used herein, the term "based on" encompasses relationships where an element is partially based as well as relationships where an element is fully based. The term "defined" encompasses relationships where an element is partially defined as well as relationships where an element is fully defined. Furthermore, the limitations of the following claims are not written in means-plus-function form, and are not intended to be construed under 35 U.S.C. 112(f) unless such claim limitations expressly use the phrase "means for" followed by a description of a function without further structure. It is to be understood that not all such objects or advantages described above may necessarily be achieved in accordance with any particular example.Thus, for example, those skilled in the art will recognize that the systems and techniques described herein can be embodied or performed in a manner that achieves or optimizes one advantage or group of advantages taught herein without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0125] Although the subject matter has been described in detail with respect to only a limited number of examples, it should be readily understood that the subject matter is not limited to such disclosed examples. Rather, the subject matter can be modified to incorporate any number of variations, alterations, substitutions, or equivalent arrangements not heretofore described, but which are commensurate with the spirit and scope of the subject matter. Additionally, while various examples of the subject matter have been described, it should be understood that aspects of the disclosure may include only some of the described examples. Also, while some examples are described as having a certain number of elements, it will be understood that the subject matter can be practiced with fewer or more than that certain number of elements. In addition, it will be understood that any feature described herein with respect to one example can be incorporated into another example. Moreover, any description of a range herein encompasses all subranges. Thus, the subject matter should not be deemed limited by the above description, but only by the scope of the appended claims.

Claims

1. A device, a detector surface including reaction sites for supporting a biological or chemical sample; a plurality of spaced apart doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the plurality of spaced apart doped areas defining photodiodes; a plurality of spaced apart doped regions formed in the semiconductor formation, each of the plurality of spaced apart doped regions associated with a respective one of the doped areas, each of the doped regions disposed in a receiving path of the excitation light and emission light intermediate the detector surface and the respective one of the doped areas; wherein each doped region of the plurality of spaced apart doped regions formed in the semiconductor formation generates a respective electric field that influences the direction of travel of electrons generated in the respective doped region as a result of absorption of photons of the excitation light in the respective doped region.

2. The device of claim 1 , wherein each of the doped regions has a junction depth greater than an absorption depth of the central wavelength of the pump light.

3. The device of claim 1 , wherein each doped region has a junction depth that is less than an absorption depth for a central wavelength of the emitted light.

4. 2. The device of claim 1, wherein each doped region has a junction depth greater than an absorption depth of a central wavelength of the excitation light, and the junction depth of each doped region is less than an absorption depth of a central wavelength of the emission light.

5. 2. The device of claim 1, wherein a junction depth of each junction defined by the respective doped region is configured such that a percentage of photons at the central wavelength of the emission light that are absorbed in a height of the semiconductor formation below the respective junction is greater than or equal to about twice the percentage of photons at the central wavelength of the excitation light that are absorbed in a height of the semiconductor formation below the respective junction.

6. 2. The device of claim 1, wherein each doped region is configured to induce drift of electrons generated in the respective doped region as a result of absorption of photons of the excitation light and emission light in the respective doped region in a direction toward a light incident surface of the semiconductor formation.

7. 10. The device of claim 1, wherein each doped region is dimensioned to feature a junction depth that is longer than the absorption depth for light in the blue wavelength band, and the depth is shorter than the absorption depth for light in the red wavelength band.

8. 2. The device of claim 1, wherein the respective doped regions include a first set of respective doped regions having a first junction depth and a second set of respective doped regions having a second junction depth, the second junction depth being less than the first junction depth.

9. 2. The device of claim 1, wherein the respective doped regions include a first set of respective doped regions configured for wavelength separation of light in the green wavelength band, the first set having a first junction depth, and a second set of respective doped regions having a second junction depth, the second junction depth being smaller than the first junction depth and configured for wavelength separation of light in the blue wavelength band.

10. 2. The device of claim 1, wherein the semiconductor formation includes vertically extending deep trench isolation formations separating the respective doped regions, and wherein a doped region of the plurality of spaced apart doped regions laterally contacts first and second ones of the vertically extending deep trench isolation formations.

11. Each doped region defines a light incidence surface of the semiconductor formation, each doped region has a junction depth greater than an absorption depth of a central wavelength of the excitation light, the junction depth of each doped region is less than an absorption depth of a central wavelength of the emission light, the plurality of spaced apart doped areas and the plurality of spaced apart doped regions are separated by a vertical spacing distance, the plurality of spaced apart doped areas have a common top height, the plurality of spaced apart doped regions have a common bottom height, the semiconductor formation is undoped between the common top height of the plurality of spaced apart doped areas and the common bottom height of the plurality of spaced apart doped regions, and each of the plurality of spaced apart doped regions is aligned with each of the doped areas.

10. The device of claim 1, wherein the alignment of each of the plurality of spaced apart doped regions with each of the doped areas is characterized by a vertically extending central axis of each of the doped areas extending through each of the doped regions, each of the reaction sites on the detector surface is associated with a respective one of a plurality of spaced apart partially doped areas, the device including an optical energy excitation device for illuminating the reaction sites, the device being controlled to simultaneously direct excitation light to adjacent ones of the reaction sites for simultaneous excitation of sample respectively supported by adjacent ones of the reaction sites.

12. A device, a detector surface for supporting a biological or chemical sample; an array of doped areas formed in a semiconductor formation, the semiconductor formation receiving excitation light and emission light from the detector surface, the doped areas of the array of doped areas defining photodiodes; a doped region formed in the semiconductor formation in a receiving path of the excitation light and emission light intermediate the detector surface and a doped area of ​​the array of doped areas; The doped region is configured to influence the direction of electrons generated in the doped region as a result of photon absorption.

13. 13. The device of claim 12, comprising an array of doped regions formed in the semiconductor formation, the array of doped regions including the doped region, each of the doped regions defining the array of doped regions being associated with a respective doped area in the array of doped areas.

14. 13. The device of claim 12, comprising an array of doped regions formed in the semiconductor formation, the array of doped regions including the doped region, each of the doped regions defining the array of doped regions being associated with a respective doped area of ​​the array of doped areas, and each of the doped regions defining the array of doped regions being positioned within the receiving paths of the excitation light and emission light intermediate the detector surface and a respective doped area of ​​the array of doped areas.

15. The device of claim 12 , wherein the doped region generates an electric field that influences the direction of electrons generated in the doped region as a result of photon absorption.

16. The device of claim 12 , wherein the doped region is configured to induce drift of electrons generated in the doped region as a result of absorption of photons of the excitation light in the doped region.

17. 1. A method comprising: forming an array of doped areas in a semiconductor formation; forming an array of doped regions in the semiconductor formation, each doped region of the array of doped regions being associated with a respective doped area of ​​the array of doped areas; forming a detector surface, the semiconductor formation configured to receive excitation light and emission light from the detector surface; The method wherein the respective doped regions are formed in the semiconductor formation within a receiving path of the excitation light and emission light from the detector surface.

18. 20. The method of claim 17, wherein each doped region is configured to influence the direction of electrons generated therein as a result of photon absorption.

19. 20. The method of claim 17, wherein the method includes depositing a dielectric stack on the semiconductor formation, the dielectric stack incorporating a metallization layer defining circuitry for readout of signals from the array of doped areas, and the method uses wafer flipping to facilitate the formation of the doped regions prior to the deposition of the dielectric stack due to the extension of the thermal budget associated with the formation of the doped regions.

20. 18. The method of claim 17, wherein the method includes depositing a dielectric stack on a second wafer separate from a wafer defining the semiconductor formation, the dielectric stack incorporating a metallization layer defining circuitry for readout of signals from the array of doped areas, and the method includes bonding the dielectric stack to the semiconductor formation using wafer-scale bonding of the second wafer to the wafer to extend the thermal budget associated with forming the doped regions.

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