Improved thermal and electrical interfaces between components in an etching chamber

Abstract

An assembly for a processing chamber of a substrate processing system includes a first component, a second component, and a thermal interface material disposed between the first component and the second component. At least one of the first component and the second component is configured to be exposed to a plasma in the processing chamber. The thermal interface material has a first surface facing and in direct contact with the first component and a second surface facing and in direct contact with the second component. The thermal interface material is comprised of a silicon polymer having aligned carbon fibers and / or carbon nanotubes (CNTs), the carbon fibers and / or CNTs being aligned in a direction perpendicular to the first surface and the second surface.

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 290,007, filed December 15, 2021. The above applications are incorporated herein by reference in their entireties.

[0002] The present disclosure relates to controlling thermal and electrical conductivity between components in a substrate processing system. [Background technology]

[0003] The description of the background art provided herein is intended to provide a general background to the present disclosure. The inventors' work within the scope of this description, and aspects of the description that may not otherwise be admitted as prior art at the time of filing, are not admitted, explicitly or implicitly, as prior art to the present disclosure.

[0004] A substrate processing system may be used to process a substrate, such as a semiconductor wafer. Processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, dielectric etching, and / or other etching, deposition, or cleaning processes. The substrate may be disposed on a substrate support, such as a pedestal or electrostatic chuck (ESC), in a processing chamber of the substrate processing system. During etching, an etching gas mixture containing one or more gases may be introduced into the processing chamber, and a chemical reaction may be initiated using a plasma.

[0005] The substrate support may include a ceramic layer disposed to support the substrate, for example, the substrate may be secured to the ceramic layer during processing, and the substrate support may include an edge ring disposed to surround the ceramic layer and the periphery of the substrate.

[0006] The processing chamber may include an upper electrode and a lower electrode. The substrate support (e.g., a base plate of the substrate support) may be configured to function as the lower electrode. In some examples, the gas mixture is introduced into the processing chamber using a gas distribution apparatus, such as a showerhead. The gas distribution apparatus may be configured to function as the upper electrode. Summary of the Invention

[0007] An assembly for a processing chamber of a substrate processing system includes a first component, a second component, and a thermal interface material disposed between the first component and the second component, wherein at least one of the first component and the second component is configured to be exposed to a plasma in the processing chamber. The thermal interface material has a first surface facing and in direct contact with the first component and a second surface facing and in direct contact with the second component. The thermal interface material is comprised of a silicon polymer having aligned carbon fibers and / or carbon nanotubes (CNTs), wherein the carbon fibers and / or the CNTs are aligned in a direction perpendicular to the first surface and the second surface.

[0008] In other features, the assembly is an upper electrode. The first component is a backplate of the upper electrode and the second component is a faceplate of the upper electrode. The thermal interface material is configured as a thermal interface gasket disposed between the backplate and the faceplate. The thermal interface gasket includes a plurality of segments. The thermal interface gasket includes a plurality of openings that align with corresponding openings defined in at least one of the backplate and the faceplate, and a boundary between the plurality of segments does not intersect any of the plurality of openings. The plurality of segments includes a central segment surrounded by a plurality of outer segments. At least one of the plurality of segments has a different thermal conductivity than other segments of the plurality of segments. The thermal interface gasket includes a plurality of alignment holes configured to receive respective ones of a plurality of alignment pins extending from at least one of the backplate and the faceplate.

[0009] In other features, the assembly is a substrate support pedestal. The first component is a base plate of the substrate support pedestal and the second component is an edge ring. The thermal interface material is configured as a thermal interface ring disposed between the base plate and the edge ring. The thermal interface ring includes a plurality of segments. The plurality of segments includes a plurality of arcs of the thermal interface ring. At least one of the plurality of segments has a thermal conductivity different from other segments of the plurality of segments. The thermal interface ring includes a plurality of alignment holes configured to receive respective ones of a plurality of alignment pins extending from at least one of the base plate and the edge ring. The assembly further includes a second thermal interface ring disposed radially outward of the thermal interface ring. The thermal conductivity of the thermal interface ring and the second thermal interface ring are different. The assembly further includes an adhesive between the thermal interface material and at least one of the first component and the second component. The adhesive includes a thermally conductive epoxy.

[0010] Further areas of applicability of the present disclosure will become apparent from the following detailed description, claims, and drawings. It is to be understood that the detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0011] The present disclosure will become more fully understood from the following detailed description and the accompanying drawings.

[0012] [Figure 1] FIG. 1 illustrates an exemplary substrate processing system according to the present disclosure.

[0013] [Figure 2A] FIG. 2A illustrates an exemplary upper electrode including a thermal interface gasket in accordance with the present disclosure.

[0014] [Figure 2B] FIG. 2B is a top view of an exemplary thermal interface gasket according to the present disclosure.

[0015] [Figure 3A] FIG. 3A illustrates an exemplary substrate support pedestal including a thermal interface ring in accordance with the present disclosure.

[0016] [Figure 3B] FIG. 3B is a top view of the example thermal interface ring of FIG. 3A in accordance with the present disclosure.

[0017] [Figure 3C] FIG. 3C illustrates another exemplary substrate support pedestal including a thermal interface ring in accordance with the present disclosure.

[0018] In the drawings, the same reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] In a substrate processing chamber, the temperatures of components such as the edge ring and the upper electrode affect processing parameters such as etch rate and uniformity at the outer edge of the substrate. For example, the edge ring and the upper electrode are exposed to the processing environment (including the plasma) and absorb heat. Thus, the temperature of each of these components changes during processing. These temperatures can then be controlled to achieve repeatable process performance (e.g., etch rate) and uniformity.

[0020] In some examples, a gas distribution device such as a showerhead is configured to function as an upper electrode. For example, the upper electrode includes two or more plates (e.g., a faceplate, a backplate, etc.) having holes for flowing the mixed gas into the processing space of the processing chamber. A thermal interface material such as a silicone-based gel, paste, pad, etc. may be disposed between the plates to facilitate heat transfer from the faceplate to the backplate. For example, the backplate may be temperature controlled (e.g., cooled) and function as a heat sink for the faceplate.

[0021] Conversely, the edge ring is disposed in thermal contact with a base plate or lower ring of the substrate support pedestal. For example, the base plate may act as a heat sink for the edge ring, with heat being transferred through an interface between the edge ring and the base plate. A thermal interface material may be provided between the edge ring and the base plate to facilitate heat transfer from the edge ring to the base plate. The base plate may include coolant channels configured to pass a coolant therethrough to transfer heat to an exterior of the base plate.

[0022] Thermal interface materials (e.g., silicone gel or paste or silicone rubber pads) can be difficult to apply, may not have consistent properties across all process chambers, and / or the properties of the thermal interface material may change over time, which may result in temperature drift of the components. For example, the thermal interface material may be exposed to process materials (e.g., plasma) which may further degrade its heat transfer properties. Replacement and repair of edge ring or upper electrode components requires a full clean (e.g., of the substrate support pedestal) to remove the thermal interface material.

[0023] Additionally, the temperature of the top electrode, edge ring, and other components varies depending on the radio frequency (RF) power delivered to the processing chamber, the thermal conductivity of the interfaces and / or interface materials, the contact area, etc. As processing power increases due to system performance and product requirements, chamber components are exposed to higher temperatures. The heat transfer characteristics and reliability of current thermal interface materials may not be sufficient at the higher temperatures associated with increased RF power. As a result, components may overheat, reducing their reliability and lifespan.

[0024] The systems and methods of the present disclosure implement thermal interface materials with improved heat transfer properties and reliability, mechanical bonding, and temperature uniformity compared to silicone-based gels and pastes or silicone rubber pads. The thermal interface materials also provide improved electrical conductivity and ease of installation and replacement. The thermal interface materials of the present disclosure are comprised of polymer composite carbon fiber sheets. More specifically, the thermal interface materials are comprised of silicone polymers with aligned carbon fibers and / or nanotubes.

[0025] Although top electrodes and edge rings are described herein, the thermal interface materials of the present disclosure may be disposed between other components within respective assemblies in a substrate processing system (e.g., between adjacent layers of a substrate support pedestal, between different components in an edge ring system comprised of multiple rings such as a bottom ring, a middle ring, and a top ring, etc.).

[0026] 1, an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 may be used to perform etching and / or other suitable substrate processing with RF plasma. The substrate processing system 100 includes a processing chamber 102 that surrounds other components in the substrate processing system 100 and contains the RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support pedestal 106, such as an ESC. During operation, a substrate 108 is placed on the substrate support pedestal 106. Although a particular substrate processing system 100 and processing chamber 102 are shown by way of example, the principles of the present disclosure may be applied to other types of substrate processing systems and processing chambers, such as substrate processing systems that generate plasma in situ or that implement remote plasma generation and delivery (e.g., using a plasma tube or microwave tube).

[0027] By way of example only, the upper electrode 104 may be implemented as a gas distribution device, such as a showerhead, that introduces and distributes process gases. The substrate-facing surface or faceplate 110 of the upper electrode 104 includes a number of holes through which process or purge gases pass. In other examples, the upper electrode 104 may include a conductive plate, and the process gases may be introduced in other ways.

[0028] The substrate support 106 includes a conductive base plate 112 that functions as a bottom electrode. The base plate 112 supports a ceramic layer 114. A bonding layer (e.g., an adhesive and / or a thermal bonding layer) 116 may be disposed between the ceramic layer 114 and the base plate 112. The base plate 112 may include one or more coolant channels 118 for directing coolant through the base plate 112. The substrate support 106 may include an edge ring 120 disposed around the outer periphery of the substrate 108. In some examples, the edge ring 120 may be actively heated.

[0029] The RF generating system 122 generates an RF voltage and outputs the RF voltage to one of the upper electrode 104 and the lower electrode (e.g., the base plate 112 of the substrate support 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or floating. In this example, the RF voltage is provided to the upper electrode. By way of example only, the RF generating system 122 may include an RF voltage generator 124 that generates an RF voltage that is provided to the upper electrode 104 or the base plate 112 by a matched distribution network 126. In other examples, the plasma may be inductively generated or remotely generated. It is noted that although the RF generating system 122 is illustrated herein as corresponding to a Capacitively Coupled Plasma (CCP) system, the principles of the present disclosure may be implemented in other suitable systems (by way of example only, a Transformer Coupled Plasma (TCP) system, a CCP cathode system, a remote microwave plasma generating and supply system, etc.).

[0030] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, . . . 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas sources provide one or more etching gases and mixtures thereof. Additionally, the gas sources may provide carrier gases and / or purge gases. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, . . . 134-N (collectively referred to as valves 134), and mass flow controllers 136-1, 136-2, . . . 136-N (collectively referred to as mass flow controllers 136). An output of the manifold 140 is provided to the process chamber 102. By way of example only, an output of the manifold 140 is provided to the showerhead 110.

[0031] The temperature controller 142 may be in communication with the coolant assembly 146 to control the flow of coolant through the passages 118. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively direct coolant through the passages 118 to cool the substrate support pedestal 106.

[0032] Valves 150 and pumps 152 may be used to evacuate reactants from the processing chamber 102. A system controller 160 may be used to control the components of the substrate processing system 100. A robot 170 may be used to place a substrate on or remove a substrate from the substrate support 106. For example, the robot 170 may transfer a substrate between the substrate support 106 and a load lock 172. Note that although the temperature controller 142 and the system controller 160 are illustrated as separate controllers, the temperature controller 142 may be implemented within the system controller 160.

[0033] Thermal interface materials according to the principles of the present disclosure are disposed between various adjacent components in the processing chamber 102. For example, a thermal interface gasket 180 constructed from a thermal interface material is provided between the faceplate 110 and the backplate 182 of the upper electrode 104. The thermal interface gasket 180 facilitates cooling of the upper electrode 104 (i.e., heat transfer from the faceplate 110 to the backplate 182). Similarly, a thermal interface sheet or ring 184 constructed from a thermal interface material is provided between the edge ring 120 and the base plate 112. The thermal interface ring 184 facilitates cooling of the edge ring 120 (i.e., heat transfer from the edge ring 120 to the base plate 112).

[0034] The thermal interface material of the thermal interface gasket 180 and the thermal interface ring 184 consists of a polymer composite carbon fiber sheet (eg, a silicon polymer with aligned carbon fibers and / or nanotubes), as described in further detail below.

[0035] 2A and 2B, a cross-sectional view of an exemplary assembly including two or more adjacent components (e.g., an upper electrode 200 including a thermal interface gasket 204 according to the present disclosure) and a plan view of the thermal gasket 204 are shown, respectively. The upper electrode 200 includes a plasma-facing faceplate 208 and a backplate 212. In some examples, the backplate 212 is temperature controlled. For example, the backplate 212 may be actively cooled by a cooling gas or liquid and serves as a heat sink for the faceplate 208. In other words, when the temperature of the faceplate 208 increases due to plasma processing, the upper electrode 200 is configured to transfer heat from the faceplate 208 to the backplate 212 to cool the faceplate 208.

[0036] The thermal interface gasket 204 is disposed between the faceplate 208 and the backplate 212. For example, a first side (e.g., an upper side) of the thermal interface gasket 204 faces and is in direct contact with the backplate 212. A second side (e.g., a lower side) of the thermal interface gasket 204 faces and is in direct contact with the faceplate 208. The thermal interface gasket 204 is configured to facilitate heat and electrical transfer between the faceplate 208 and the backplate 212. For example, the thermal interface gasket 204 is comprised of a material having a thermal conductivity of 16 to 35 Watts per meter·Kelvin (W / m·K). The thermal interface gasket 204 is comprised of a polymer composite carbon fiber sheet, such as a silicon polymer sheet with aligned carbon fibers and / or nanotubes. In some examples, the thermal interface gasket 204 has a thickness of 0.1 mm to 3.0 mm. As an example, the thermal interface gasket 204 has a thickness of 0.2 mm to 0.3 mm.

[0037] In some examples, the faceplate 208 is attached to the backplate 212 by a number of fasteners, such as pull-down rods or clamps 216. For example, each clamp 216 may include a threaded lower end 220 that extends from the backplate 212, through an opening 222 in the thermal interface gasket 204, and into a respective opening 224 in the upper surface of the faceplate. Similarly, in examples in which the upper electrode 200 is configured to function as a gas distributor or showerhead, process gas is supplied to the processing chamber 102 from a manifold or plenum 228 defined in the backplate through a passage 232 that passes through the opening 222 in the thermal interface gasket 204. The passage 232 passes through the faceplate 208 and directs the process gas into the processing chamber 102.

[0038] In some examples, one or more alignment features (e.g., alignment pins 236 as shown) extend upward from the faceplate 208 and / or downward from the backplate 212 into corresponding alignment features (e.g., alignment holes 240) defined in the thermal interface gasket 204. The alignment pins 236 are inserted into the alignment holes 240 to position (e.g., center) the thermal interface gasket 204 relative to the faceplate 208.

[0039] As shown in the plan view (i.e., from above) of FIG. 2B, in one example, the thermal interface gasket 204 is comprised of a number of interlocking segments 244. For example, as shown, the thermal interface gasket 204 includes nine segments 244 (e.g., one central segment and eight outer segments surrounding it). Note that while the central segment is shown as being generally square, the central segment may have any suitable shape. In some examples, the eight outer segments may be the same size and shape. In other examples (as shown), the outer segments have irregular shapes. For example, the boundary lines 248 between the segments 244 may be configured such that each opening 222 is completely defined within its respective segment 244. As shown, the boundary lines 248 weave between and around the openings 222 in a zigzag fashion. In other words, no opening 222 overlaps more than one of the segments 244, and the boundary lines 240 do not intersect with any of the openings 222. Similarly, each segment 244 may include one or more alignment holes 240. In other examples, the boundary line 248 may be curved. The alignment holes 240 in each segment 244 may be the same size or may be different sizes.

[0040] In other examples, the thermal interface gasket 204 is constructed of a single integral piece instead of multiple segments 244. In other examples, the segments 244 may be constructed as multiple different azimuthal or radial zones, and one or more of the segments 244 may be constructed of a different thermal interface material than other ones of the segments 244. In this manner, different segments of the thermal interface gasket 204 may provide different heat transfer characteristics to different regions of the upper electrode 200.

[0041] 3A and 3B, a cross-sectional view of another exemplary assembly including two or more adjacent components (e.g., a substrate support 300 including a thermal interface ring 304 according to the present disclosure) and a plan view of the thermal interface ring 304 disposed on the substrate support 300, respectively. The substrate support 300 includes a base plate (e.g., a conductive aluminum base plate 308 serving as a bottom electrode) and an edge ring 312. In some examples, the edge ring 312 is temperature controlled. For example, the edge ring 312 may be actively heated to adjust process performance at the edge of the substrate 314. In some examples, the edge ring 312 is heated by resistive heating. A ceramic layer 318 may be disposed on the base plate 308. The substrate 314 is then disposed on the ceramic layer 318.

[0042] Conversely, the base plate 308 may be cooled by a cooling gas or liquid and serves as a heat sink for the edge ring 312. In other words, when the temperature of the edge ring 312 increases, the base plate 308 is configured to transfer heat from the edge ring 312 to cool the edge ring. The thermal interface ring 304 is disposed between the base plate 308 and the edge ring 312 and facilitates heat and electrical conduction between the edge ring 312 and the base plate 308. For example, the thermal interface ring 304 is comprised of a material having a thermal conductivity of 16 to 35 Watts per meter·Kelvin (W / m·K). A first side (e.g., top side) of the thermal interface ring 304 faces and is in direct contact with the edge ring 312. A second side (e.g., bottom side) of the thermal interface ring 304 faces and is in direct contact with the base plate 208. The thermal interface ring 304 is comprised of a polymer composite carbon fiber sheet, such as a silicon polymer sheet with aligned carbon fibers and / or nanotubes. In some examples, the thermal interface ring 304 has a thickness between 0.1 mm and 3.0 mm. As an example, the thermal interface ring 304 has a thickness between 0.2 mm and 0.3 mm.

[0043] In some examples, one or more alignment features (e.g., alignment pins 336 as shown) extend upwardly from the base plate 308 into corresponding alignment features (e.g., alignment holes 340) defined in the thermal interface ring 304. The alignment pins 336 are inserted into the alignment holes 340 to position (e.g., center) the thermal interface ring 304 relative to the base plate 308.

[0044] As shown in the plan view (i.e., view from above) of FIG. 3B, in one example, the thermal interface ring 304 is comprised of a plurality of segments 344. For example, as shown, the thermal interface ring 304 includes six segments 344 (e.g., six arcs, or arc-shaped segments, of the annular thermal interface ring 304). In some examples, the segments 344 may be the same size and shape. In other examples (as shown), the segments 344 are not the same size. Each segment 344 may include one or more alignment holes 340. The alignment holes 340 of each segment 344 may be the same size or may be different sizes.

[0045] In other examples, the thermal interface ring 304 is constructed of a single unitary piece instead of multiple segments 344. In other examples, the segments 344 may be constructed as multiple different azimuthal or radial zones, and one or more of the segments 344 may be constructed of a different thermal interface material than the other segments 344. In this manner, different segments of the thermal interface ring 304 may provide different heat transfer characteristics to different regions of the edge ring 312.

[0046] In another example shown in FIG. 3C, a second thermal interface ring 348 is provided between the periphery of the edge ring 312 and the substrate support pedestal 300. For example, the substrate support pedestal 300 includes a bottom ring (e.g., an insulator ring) 352 around the periphery of the base plate 308, and the periphery of the edge ring 312 is supported by the bottom ring 352. The second thermal interface ring 348 may be composed of the same material as the thermal interface ring 304, or may be composed of a different material. For example, the second thermal interface ring 348 may be composed of a silicone-based gel, paste, pad, or the like. In this manner, the thermal interface ring 304 and the second thermal interface ring 348 may have the same or different thermal transfer characteristics.

[0047] The thermal interface material of the thermal interface gasket 204 and the thermal interface ring 304 comprises a composite of a polymer (e.g., a silicon polymer) and aligned carbon fibers and / or carbon nanotubes (CNTs). For example, the CNTs are aligned within a polymer matrix. The aligned arrangement of the CNTs provides thermal and electrical conduction paths through the thermal interface material. For example, the CNTs are aligned perpendicular to the surface of the thermal interface material to provide thermal and electrical conductivity perpendicular to the surface of the thermal interface material.

[0048] In any of the above examples, an adhesive may be provided between a surface of the thermal interface material (e.g., a surface of the thermal interface ring 304) and an adjacent surface of the edge ring 312, the base plate 308, and / or the bottom ring 352. The adhesive may be provided on the top surface, the bottom surface, or both the top and bottom surfaces of the thermal interface ring 304. The adhesive may be comprised of a thermal adhesive, such as a thermally conductive epoxy. The adhesive may be applied as a layer, as dots or another discontinuous pattern, or the like. The adhesive may be provided in place of or in addition to the alignment holes 340. In this manner, the adhesive may facilitate holding the thermal interface ring 304 in a desired position.

[0049] The above description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the present disclosure can be implemented in various forms. Thus, while the present disclosure includes specific examples, other variations will become apparent from a detailed examination of the drawings, the specification, and the following claims, and the true scope of the present disclosure should not be limited thereto. It should also be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment has been described as having specific features, any one or more of these features described in connection with any embodiment of the present disclosure may be included in and / or combined (even if not explicitly stated) with any feature of any other embodiment. That is, the above-described embodiments are not mutually exclusive, and one or more embodiments may be substituted for one another within the scope of the present disclosure.

[0050] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," "disposed," etc. Unless expressly stated as "direct," when a relationship between a first element and a second element is described in the above disclosure, the relationship can be a direct relationship where there are no other intervening elements between the first element and the second element, or an indirect relationship where there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logic (A or B or C) with a non-exclusive logical OR, and not to mean "at least one of A, at least one of B, and at least one of C."

[0051] In some implementations, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal and gas flow systems). These systems may be integrated with electronics to control the operation of the system before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. These processes may include supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position and motion settings, wafer loading and unloading from the tool, and wafer loading and unloading from other transfer tools and / or load locks connected or associated with the particular system.

[0052] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software to receive instructions, send instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips as firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller as various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0053] In some implementations, the controller may be part of or coupled to a computer, where the computer is integral to the system, coupled to the system, or otherwise networked with the system, or a combination thereof. For example, the controller may reside on the "cloud" or in all or part of a fab host computer system. This allows remote access of wafer processing. The computer may enable remote access to the system to monitor the progress of a manufacturing process, examine past manufacturing process history, or examine trends or performance indicators from multiple manufacturing processes, change parameters of a current process, set up a process step following a current process, or start a new process. In some examples, a process recipe may be provided to the system from a remote computer (e.g., a server) over a network, where the network may include a local network or the Internet. The remote computer may include a user interface that allows for input or programming of parameters and / or settings. These parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions as data, where the data specifies parameters for each process step to be performed in one or more operations. It should be understood that these parameters may be specific to the type of process being performed and the type of tool the controller is configured to cooperate with or control. Thus, as described above, the controller may be distributed, such as by having one or more individual controllers that are networked together and work toward a common goal, such as the process and control described herein. One example of a distributed controller for such a purpose includes one or more integrated circuits mounted in the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer).These integrated circuits work together to control the process in the chamber.

[0054] Non-limiting examples of systems include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a Physical Vapor Deposition (PVD) chamber or module, a CVD chamber or module, an ALD chamber or module, an Atomic Layer Etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system related to or usable in the manufacturing and / or production of semiconductor wafers.

[0055] As described above, depending on one or more process steps being performed by the tool, the controller may communicate with one or more of other tool circuits or tool modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from wafer containers to tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. An assembly for a processing chamber of a substrate processing system, comprising: A first component; a second component, at least one of the first component and the second component configured to be exposed to a plasma in the processing chamber; and a thermal interface material disposed between the first component and the second component; the thermal interface material having a first surface facing and in direct contact with the first component and a second surface facing and in direct contact with the second component; the thermal interface material is comprised of a silicone polymer having aligned carbon fibers and / or carbon nanotubes (CNTs); At least one of the carbon fibers and the CNTs is aligned in a direction perpendicular to the first surface and the second surface. assembly.

2. 2. The assembly of claim 1, the assembly being an upper electrode; assembly.

3. 3. The assembly of claim 2, the first component is a backplate of the upper electrode and the second component is a faceplate of the upper electrode; assembly.

4. 4. The assembly of claim 3, the thermal interface material is configured as a thermal interface gasket disposed between the backplate and the faceplate; assembly.

5. 5. The assembly of claim 4, the thermal interface gasket comprises a plurality of segments; assembly.

6. 6. The assembly of claim 5, the thermal interface gasket includes a plurality of openings aligned with corresponding openings defined in at least one of the backplate and the faceplate, and a boundary line between the plurality of segments does not intersect any of the plurality of openings. assembly.

7. 6. The assembly of claim 5, The plurality of segments includes a central segment surrounded by a plurality of outer segments. assembly.

8. 6. The assembly of claim 5, At least one of the plurality of segments has a thermal conductivity different from other segments of the plurality of segments. assembly.

9. 5. The assembly of claim 4, the thermal interface gasket includes a plurality of alignment holes configured to receive respective alignment pins extending from at least one of the backplate and the faceplate; assembly.

10. 2. The assembly of claim 1, the assembly being a substrate support; assembly.

11. 11. The assembly of claim 10, the first component is a base plate of the substrate support and the second component is an edge ring. assembly.

12. 12. The assembly of claim 11, the thermal interface material is configured as a thermal interface ring disposed between the base plate and the edge ring; assembly.

13. 13. The assembly of claim 12, the thermal interface ring includes a plurality of segments; assembly.

14. 14. The assembly of claim 13, the plurality of segments comprising a plurality of arcs of the thermal interface ring; assembly.

15. 14. The assembly of claim 13, At least one of the plurality of segments has a thermal conductivity different from other segments of the plurality of segments. assembly.

16. 13. The assembly of claim 12, the thermal interface ring includes a plurality of alignment holes configured to receive respective alignment pins extending from at least one of the base plate and the edge ring; assembly.

17. 13. The assembly of claim 12, a second thermal interface ring disposed radially outward of the thermal interface ring; assembly.

18. 20. The assembly of claim 17, the thermal interface ring and the second thermal interface ring have different thermal conductivities; assembly.

19. 2. The assembly of claim 1, further comprising an adhesive between the thermal interface material and at least one of the first component and the second component. assembly.

20. 20. The assembly of claim 19, the adhesive comprises a thermally conductive epoxy; assembly.

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