Semiconductor process equipment and its mounting device

Abstract

An embodiment of the present application provides a mounting device for semiconductor processing equipment, the mounting device being installed in a process chamber, comprising a base, a carrier, and a stopper ring structure, the stopper ring structure being fitted on the outer periphery of the base, an air blowing passage and a first gas uniformizing space being formed between the inner periphery wall and the outer periphery wall of the base, the first gas uniformizing space being connected to the air blowing passage, the carrier and the base being stacked on each other, the carrier being located below the base, and a gas flow path structure being provided between the carrier and the base, the gas flow path structure being connected to the first gas uniformizing space through a connecting passage, the gas flow path structure being used for transporting a purge gas to the first gas uniformizing space through the connecting passage, the first gas uniformizing space being used for uniformizing the purge gas, and the air blowing passage being used for blowing out the uniformized purge gas, thereby purging the bottom and side surfaces of the wafer.

Description

[Technical field]

[0001] This application relates to the technical field of semiconductor processing, and more particularly to semiconductor process equipment and mounting devices thereof. [Background technology]

[0002] At present, Chemical Vapor Deposition (CVD) is a process that creates a solid thin film on the surface of a wafer through a gas chemical reaction. The wafer mounting apparatus for the thin film deposition process generally has an edge purge function that blows off the reactive gas near the back and sides of the wafer, thereby preventing back and side plating of the wafer. As the requirements for process temperature, metal contamination and particles increase, the material of the top plate for mounting the wafer in the mounting apparatus is changed from metal aluminum and stainless steel to ceramic materials that have high temperature resistance, good particle and less metal contamination.

[0003] However, since it is difficult to process a top plate made of a ceramic material, it is difficult to process a pipe structure for edge purging in the top plate, which increases manufacturing costs and makes it impossible to meet the requirement of uniform air blowing at the wafer edge in the thin film deposition process, thereby making it impossible to guarantee product quality. Summary of the Invention [Problem to be solved by the invention]

[0004] In response to the shortcomings of the conventional method, the present application proposes a semiconductor process equipment and its mounting device to solve the technical problems existing in the conventional technology, such as high manufacturing costs and the inability to meet the requirements for uniform air blowing for wafer edge purging. [Means for solving the problem]

[0005] In order to achieve the object of the present invention, a semiconductor processing device is provided in a process chamber of the semiconductor processing device, and includes a base, a carrier, and a stopper ring structure, an upper surface of the base is used for placing a wafer thereon, the stopper ring structure is fitted around the outer periphery of the base and is used for regulating the position of the wafer, an air blow passage and a first gas uniformization space are formed between an inner periphery wall of the stopper ring structure and an outer periphery wall of the base, the first gas uniformization space is connected to the air blow passage, the carrier and the base are stacked on each other, the carrier is located below the base, a gas passage structure is provided between the carrier and the base, a connecting passage is provided in the base, and the gas passage structure is connected to the first gas uniformization space via the connecting passage, The gas flow path structure is used to transport purge gas to the first gas uniformization space via the connecting flow path, the first gas uniformization space is used to uniformize the flowing purge gas, and the air blow flow path is for blowing out the uniformized purge gas in order to purge the bottom and side surfaces of the wafer.

[0006] Optionally, the gas flow path structure includes a gas guide flow path structure and a second gas uniformization space, the gas guide flow path structure communicating with the second gas uniformization space, and the second gas uniformization space communicating with the first gas uniformization space via the connecting flow path; The gas guiding channel structure is used for transporting the purge gas to the second gas uniformizing space, and the second gas uniformizing space is used for uniformizing the flow of the purge gas.

[0007] Optionally, the volume of the second gas uniformization space is greater than the volume of the first gas uniformization space and / or the ventilation cross-section of the connecting passage is smaller than the ventilation cross-sections of the first gas uniformization space and the second gas uniformization space.

[0008] Optionally, the connecting flow path includes a plurality of gas restriction holes penetrating the base, the plurality of gas restriction holes being evenly arranged along a circumferential direction of the base, and both ends of each of the gas restriction holes respectively communicating with the first gas homogenization space and the second gas homogenization space.

[0009] Optionally, each of the gas restriction holes includes a first straight through hole and a second straight through hole arranged sequentially in a vertical direction, the first straight through hole is located above the second straight through hole, and the diameter of the first straight through hole is smaller than the diameter of the second straight through hole.

[0010] Optionally, the gas guide passage structure includes at least one gas guide passage and at least one vent hole penetrating the carrier, each of the vent holes communicating with an intake end of at least one of the gas guide passages, the vent hole being used to communicate with a purge gas source, and the exhaust ends of the gas guide passages are evenly spaced apart along the circumferential direction of the second gas homogenization space, and all of them communicate with the second gas homogenization space.

[0011] Optionally, one of the surface of the carrier facing the base and the surface of the base facing the carrier is provided with an annular groove and a number of linear grooves, and the other of the surface of the carrier facing the base and the surface of the base facing the carrier is fitted into the annular groove to form the second gas homogenization space and fitted into each of the linear grooves to form the gas guide passages; or An annular groove and a plurality of straight grooves are formed on both the surface of the carrier facing the base and the surface of the base facing the carrier, and the carrier is fitted into the annular groove in the base to form the second gas homogenization space, and the carrier is fitted into the plurality of straight grooves in the base to form the gas guide passage.

[0012] Optionally, the mounting device further includes a support shaft, which is located below the carrier and is used to support the carrier, and a first gas uniformization flow path structure is provided on a surface of the support shaft facing the carrier, the first gas uniformization flow path structure corresponds to and communicates with the intake ends of each of the air holes, and the first gas uniformization flow path structure is communicated with a purge gas source.

[0013] Optionally, the first gas equalization flow path structure includes at least one first arcuate flow path, and the first arcuate flow path extends circumferentially around the support shaft, each of the first arcuate flow paths is provided corresponding to two of the air holes, intake ends of the two air holes are respectively connected to both ends of the first arcuate flow path, and the first arcuate flow path is provided with an intake port connected to the purge gas source at a midpoint position.

[0014] Optionally, the base is further provided with a plurality of first suction holes penetrating the base, and the plurality of first suction holes are evenly distributed along a circumferential direction of the base; the carrier is further provided with a plurality of second suction holes penetrating the carrier, and the second suction holes and the first suction holes are the same in number and are provided in one-to-one correspondence; A second gas uniformization flow path structure is further provided on the surface of the support shaft facing the carrier, and the second gas uniformization flow path structure corresponds to and communicates with the intake ends of each of the second suction holes, and the second gas uniformization flow path structure communicates with a vacuum suction device.

[0015] Optionally, the second gas equalization flow passage structure includes at least one second arc-shaped flow passage, and the second arc-shaped flow passage extends circumferentially around the support shaft, each of the second arc-shaped flow passages is provided corresponding to two of the second suction holes, the intake ends of the two second suction holes are respectively connected to both ends of the second arc-shaped flow passage, and the second arc-shaped flow passage is provided with an intake port at its midpoint that is connected to a vacuum suction device.

[0016] Optionally, the second arcuate channels are two in number and are symmetrically distributed about an axis of the support shaft; The second gas equalization flow path structure further includes a third arc-shaped flow path, the third arc-shaped flow path extending circumferentially around the support shaft, and both ends of the third arc-shaped flow path respectively communicate with the two second arc-shaped flow paths at midpoint positions of the two second arc-shaped flow paths, and the third arc-shaped flow path communicates with the vacuum suction device at the midpoint positions.

[0017] Optionally, the stopper ring structure includes an annular body, an inner peripheral wall of the annular body is provided with a cover ring protruding toward an outer peripheral wall of the base, and a gap is provided between the inner peripheral wall of the cover ring and the outer peripheral wall of the base to form the air blow passage.

[0018] Optionally, a gas guide groove is provided at a connection between the upper surface and the inner peripheral surface of the cover ring, the gas guide groove is annular and is provided along the circumferential direction of the cover ring, the bottom surface of the gas guide groove is lower than the upper surface of the base, and the diameter of the circumferential side surface of the gas guide groove is larger than the diameter of the wafer; The gas guide groove communicates with the air blow passage so as to guide the purge gas blown out from the air blow passage to the bottom and side surfaces of the wafer.

[0019] Optionally, the base includes a base body, an outer peripheral wall of the base body is provided with a mounting ring protruding toward an inner peripheral wall of the annular body, and a wrap ring protruding toward the base body is further provided in a region of the inner peripheral wall of the annular body located below the cover ring; The wrap ring is stacked on the mounting ring, and a gap is formed between the wrap ring and the outer peripheral wall of the base body to form the first gas homogenizing space.

[0020] Optionally, a positioning structure is provided between the two stacked surfaces of the wrap ring and the mounting ring, the positioning structure including a positioning protrusion and a positioning recess, the positioning protrusion being fitted into the positioning recess so as to regulate the relative positions of the wrap ring and the mounting ring.

[0021] Optionally, a protruding gas restriction ring is provided between the mounting ring and the cover ring on the outer peripheral wall of the base body, and a gap is formed between the gas restriction ring and the cover ring to form a gas restriction passage, which is used to communicate the air blow passage and the first gas homogenization space.

[0022] Optionally, the cross-section of the gas restriction passage is smaller than the cross-section of the air blow passage, and the cross-section of the air blow passage is smaller than the cross-section of the first gas homogenization space; The cross section of the connecting passage is larger than the cross section of the gas restricting passage.

[0023] Optionally, the base, the carrier and the stopper ring structure are all made of an aluminum nitride ceramic material.

[0024] As another technical solution, an embodiment of the present application includes a process chamber and the above-mentioned mounting apparatus according to the embodiment of the present application, and the mounting apparatus further provides a semiconductor processing device disposed in the process chamber.

[0025] The beneficial technical effects of the technical solutions according to the embodiments of the present application are as follows:

[0026] In the mounting device according to the embodiment of the present application, a stopper ring structure is fitted on the outer periphery of the base, an air blow passage and a first gas uniformizing space are formed between the inner periphery wall of the stopper ring structure and the outer periphery wall of the base, and a gas passage structure is formed between the base and the carrier, the gas passage structure is used to transport purge gas to the first gas uniformizing space through a connecting passage in the base, the first gas uniformizing space is used to uniformize the purge gas, and the uniformized purge gas is blown out through the air blow passage to purge the bottom and side of the wafer. By using the first gas uniformizing space to uniformize the purge gas, the gas can be blown out uniformly from the air blow passage, which can ensure that the edge air blow has the same effect on the air flow field of the bottom and side of the wafer, and further improve the consistency of the process deposition and the process yield. In addition, the air blow passage and the first gas homogenization space are both formed between the base and the stopper ring structure, and the gas passage structure is formed between the base and the carrier, so that the structure is simple and easy to process and manufacture, thereby significantly reducing application and manufacturing costs.

[0027] By adopting the mounting device according to the embodiment of the present application, the semiconductor process equipment according to the embodiment of the present application can not only reduce manufacturing costs but also improve the consistency of process film formation, thereby significantly improving the process yield.

[0028] Additional aspects and advantages of the present application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the present application.

[0029] The above and / or additional aspects and advantages of the present application will become apparent and will become more readily understood from the following detailed description of the embodiments with reference to the accompanying drawings, in which: [Brief description of the drawings]

[0030] [Figure 1] 1 is a schematic cross-sectional view of a mounting device according to a first embodiment of the present application. [Diagram 2] FIG. 2 is a bottom structural view of a base employed in the first embodiment of the present application. [Diagram 3] 4 is another schematic cross-sectional view of the mounting device according to the first embodiment of the present application. FIG. [Figure 4A] FIG. 2 is a diagram showing the positional relationship between a mounting device and a process chamber according to the first embodiment of the present invention. [Figure 4B] FIG. 2 is a top view of the support shaft employed in the first embodiment of the present application. [Diagram 5] 4 is another schematic cross-sectional view of the mounting device according to the first embodiment of the present application. FIG. [Figure 6] FIG. 2 is a top view of the structure of a base employed in the first embodiment of the present application. [Figure 7] 2 is a top view of a carrier employed in the first embodiment of the present invention; FIG. [Figure 8] 2 is a partial schematic cross-sectional view of the mounting device in FIG. 1. [Figure 9A] FIG. 4 is a schematic diagram showing a simulation result of an airflow field in a second gas-homogenizing space according to the first embodiment of the present application. [Figure 9B] FIG. 4 is a schematic diagram showing a simulation result of an airflow field in a first gas-homogenizing space according to the first embodiment of the present application. [Figure 9C] 4 is a schematic diagram showing the results of a simulation of an airflow field in a gas restriction flow passage according to the first embodiment of the present invention; FIG. [Figure 9D] FIG. 4 is a schematic diagram showing a simulation result of an airflow field in an air blow passage according to the first embodiment of the present invention. [Figure 10] FIG. 11 is a schematic cross-sectional view of a mounting device according to a second embodiment of the present invention. [Figure 11] FIG. 11 is a schematic enlarged cross-sectional view of a portion of a mounting device according to a second embodiment of the present invention. [Figure 12] 13 is another enlarged schematic cross-sectional view of a portion of the mounting device in accordance with the second embodiment of the present invention. FIG. [Figure 13] FIG. 11 is a bottom structural view of a base employed in a second embodiment of the present invention. [Figure 14] FIG. 11 is a top view of a carrier employed in a second embodiment of the present invention; [Figure 15]13 is another top structural view of the carrier employed in the second embodiment of the present application. FIG. [Figure 16A] FIG. 11 is a schematic diagram showing a simulation result of an airflow field in a second gas-homogenizing space according to a second embodiment of the present invention. [Figure 16B] FIG. 11 is a schematic diagram showing a simulation result of an airflow field in a first gas-homogenizing space according to a second embodiment of the present invention. [Figure 16C] 13 is a schematic diagram showing the results of a simulation of an airflow field in a gas restricting passage according to a second embodiment of the present invention; FIG. [Figure 16D] FIG. 11 is a schematic diagram showing a simulation result of an airflow field in an air blow passage according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] The present application will be described in detail below. Examples of the present application are shown in the drawings, and the same or similar reference numerals throughout indicate the same or similar components, or components having the same or similar functions. In addition, if a detailed description of the prior art is not necessary to illustrate the features of the present application, the description will be omitted. The following embodiments described with reference to the drawings are illustrative and are only used to explain the present application, and cannot be construed as limiting the present application.

[0032] As will be understood by those skilled in the art, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. Furthermore, terms as defined in common dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in their ideal or full meaning unless otherwise defined herein.

[0033] The following provides a detailed description of the technical solution of the present application in specific embodiments and how the technical solution of the present application solves the above technical problems.

[0034] First Example An embodiment of the present application provides a mounting device for a semiconductor processing equipment, which is installed in a process chamber (for example, the process chamber 7 shown in FIG. 4A ). A structural schematic diagram of the mounting device, as shown in FIG. 1 , includes a base 1, a carrier 2, and a stopper ring structure 3, the upper surface of the base 1 is used for mounting a wafer 100, and optionally, the base 1 includes a base body 14, the upper surface of the base body 14 is used for mounting the wafer 100, the stopper ring structure 3 is fitted on the outer periphery of the base 1 and is used for regulating the position of the wafer 100, and an air blowing passage 51 and a first gas uniformizing space 52 are formed between the inner peripheral wall of the stopper ring structure 3 and the outer peripheral wall of the base 1, and the first gas uniformizing space 52 is formed between the inner peripheral wall of the stopper ring structure 3 and the outer peripheral wall of the base 1. The space 52 is connected to the air blow passage 51, the carrier 2 and the base 1 are stacked on each other, the carrier 2 is located below the base 1, and a gas flow passage structure 4 is provided between the carrier 2 and the base 1, and a connecting passage 15 is provided in the base 1, the gas flow passage structure 4 is connected to the first gas uniformization space 52 via the connecting passage 15, the gas flow passage structure 4 is used to transport purge gas to the first gas uniformization space 52 via the connecting passage 15, the first gas uniformization space 52 is used to uniformize the flowing purge gas, and the air blow passage 51 is for blowing out the uniformized purge gas to purge the bottom and side surfaces of the wafer 100 (i.e., the exposed portions at the edges of the wafer 100).

[0035] As shown in FIG. 1, the semiconductor processing equipment can be used to perform a chemical vapor deposition process on a wafer 100, but the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation. The base 1 can be made of a ceramic material and has a disk-shaped structure, the upper surface of the base 1 can be used to place the wafer 100, and the diameter of the upper surface of the base 1 can be smaller than the diameter of the wafer 100. Optionally, the base 1 is further provided with a radio frequency grounding electrode 101 for electrically connecting to a radio frequency power source or for grounding. The carrier 2 can be made of a ceramic material and has a disk-shaped plate-shaped structure, the carrier 2 is stacked on the bottom of the base 1 and is provided in the process chamber through a support shaft 6, the support shaft 6 may be liftable, and the lower end of the support shaft 6 may extend from the bottom of the process chamber, so as to be connected to an external lifting drive source, and a bellows is fitted into the support shaft 6 to seal the gap between the support shaft 6 and the process chamber, thereby ensuring the hermeticity of the process chamber. Optionally, a heating tube 21 for heating the wafer 100 may be provided in the carrier 2, and the heating tubes 21 may be provided corresponding to different regions of the carrier 2, for example, as shown in FIG. 1, there are two heating tubes 21, which are provided corresponding to the central region and the edge region of the carrier 2, respectively, thereby realizing partition temperature control. In addition, a gas flow path structure 4 may be provided between the carrier 2 and the base 1, and the gas flow path structure 4 is used for connecting to a gas source to introduce purge gas and transport the purge gas to the first gas homogenization space 52. The stopper ring structure 3 may be made of a ceramic material as a sleeve structure, and the stopper ring structure 3 may be fitted to the outer periphery of the base 1 to regulate the position of the wafer 100 on the base 1, but the embodiment of the present application is not limited thereto.An air blow passage 51 and a first gas uniformization space 52 may be formed between the inner peripheral wall of the stopper ring structure 3 and the outer peripheral wall of the base 1. For example, the air blow passage 51 and the first gas uniformization space 52 are provided in order from top to bottom, and the first gas uniformization space 52 is provided with a top portion communicating with the air blow passage 51 and a bottom portion communicating with the gas passage structure 4 via the connection passage 15, and is used to uniformize the purge gas introduced by the gas passage structure 4. The air blow passage 51 is for blowing out the uniformized purge gas to purge the bottom and side surfaces of the wafer 100. Since the diameter of the top surface of the base 1 is smaller than the diameter of the wafer 100, the purge gas blown out from the air blow passage 51 can flow through the exposed areas of the bottom and side surfaces of the wafer 100, thereby realizing uniform purging of the bottom and side surfaces of the wafer 100.

[0036] In the mounting device according to the embodiment of the present application, a stopper ring structure 3 is fitted on the outer periphery of the base 1, an air blow passage 51 and a first gas uniformization space 52 are formed between the inner peripheral wall of the stopper ring structure 3 and the outer peripheral wall of the base 1, and a gas flow passage structure 4 is formed between the bottom surface of the base 1 and the upper surface of the carrier 2, and the gas flow passage structure 4 is used to transport the purge gas to the first gas uniformization space 52 through the connecting passage 15 in the base 1, and the first gas uniformization space 52 allows the purge gas that has entered to diffuse faster along the circumferential direction of the base 1, thereby playing a role in uniforming the purge gas, and the uniformed purge gas is blown out through the air blow passage so as to purge the bottom and side surfaces of the wafer 100. By using the first gas uniformizing space 52 to uniformize the purge gas, the gas can be uniformly blown out of the air blowing passage 51, thereby ensuring that the edge air blow has the same effect on the airflow field at the bottom and side of the wafer 100, and further improving the consistency of the process deposition and the process yield. In addition, the air blowing passage 51 and the first gas uniformizing space 52 are both formed between the base and the stopper ring structure, and the gas passage structure is formed between the base and the carrier, so that the structure is simple and easy to process and manufacture, and thus the application and manufacturing costs are greatly reduced.

[0037] 1 and 2, the gas flow path structure 4 includes a gas guide flow path structure and a second gas uniformization space 41, the gas guide flow path structure communicates with the second gas uniformization space 41, and the second gas uniformization space 41 communicates with the first gas uniformization space 52 via the above-mentioned connection flow path 15, and optionally, the second gas uniformization space 41 is annular and faces the first gas uniformization space 52 in the vertical direction, and the volume of the second gas uniformization space 41 is larger than the volume of the first gas uniformization space 52. The above-mentioned gas guide flow path structure is used to transport purge gas to the second gas uniformization space 41, and the second gas uniformization space 41 is used to uniform the flowing purge gas. Specifically, the purge gas blown out from the gas guide channel structure first undergoes first gas homogenization through the second gas homogenization space 41, then undergoes second gas homogenization through the first gas homogenization space 52, and finally is blown out to the bottom and side surfaces of the wafer 100 through the air blow channel 51. By adopting the above design, the purge gas undergoes gas homogenization twice through the second gas homogenization space, so that the purge gas blown out from the air blow channel 51 is more uniform, thereby further improving the edge purge uniformity of the wafer, further improving the process uniformity of the wafer, and improving the process yield.

[0038] In addition, the second gas uniformization space 41 is closer to the gas source than the first gas uniformization space 52, and when the purge gas enters the second gas uniformization space 41, the airflow speed is faster and the non-uniformity is greater. Therefore, by making the volume of the second gas uniformization space 41 larger than the volume of the first gas uniformization space 52, the second gas uniformization space 41 having a larger volume can be used to perform the first gas uniformization, and the airflow can be better buffered. In this way, the purge gas enters the first gas uniformization space 52 after being buffered by the second gas uniformization space 41, and the gas can be better uniformized, thereby improving the uniformity of the purge gas.

[0039] 1 and 8, in an embodiment of the present application, the ventilation cross section of the connection passage 15 is smaller than the ventilation cross sections of the first gas uniformization space 52 and the second gas uniformization space 41. Optionally, the connection passage 15 includes a plurality of gas limiting holes penetrating the base 1, the plurality of gas limiting holes being evenly arranged along the circumferential direction of the base 1, and both ends of each gas limiting hole respectively communicating with the first gas uniformization space 52 and the second gas uniformization space 41. Optionally, each gas limiting hole penetrates the base 1 in the vertical direction.

[0040] The above-mentioned connection flow passage 15 adopts a gas limiting hole, so that the embodiment of the present application is easy to process, and thus the processing yield is greatly improved, and the application and maintenance costs are further reduced. Furthermore, the ventilation cross section of the above-mentioned connection flow passage 15 (i.e., the ventilation cross section of each gas limiting hole) is smaller than the ventilation cross sections of the first gas uniformization space 52 and the second gas uniformization space 41, that is, the cross section of the connection flow passage 15 in contact with the airflow direction is smaller than the cross sections of the first gas uniformization space 52 and the second gas uniformization space 41 in contact with the airflow direction. In this way, the above-mentioned connection flow passage 15 can perform a boosting effect on the purge gas discharged from the second gas uniformization space 41, and in combination with the gas uniformization effect of the first gas uniformization space 52, the uniformity of the purge gas can be further improved, thereby improving the uniformity of the wafer 100 and the process yield.

[0041] In the embodiment of the present application, as shown in Figures 2 and 3, the gas guiding channel structure includes at least one gas guiding channel 44 and at least one vent hole 22 penetrating the carrier 2, each vent hole 22 is connected to the intake end 44a of at least one gas guiding channel 44, and the vent hole 22 is used to connect to a purge gas source. By using each vent hole 22, the purge gas can not only be introduced into at least one gas guiding channel 44, but also the purge gas can be simultaneously transported to the intake end 44a of each gas guiding channel 44, so as to ensure the uniformity of the purge gas.

[0042] The exhaust ends 44b of the gas guide passages 44 are evenly spaced apart along the circumferential direction of the second gas uniformization space 41, and all of them communicate with the second gas uniformization space 41. For example, as shown in FIG. 3, there are two vent holes 22, and optionally, the two vent holes 22 are located at or adjacent to the center position of the base 1 and are used to communicate with the purge gas source, and each vent hole 22 communicates with the intake ends 44a of the four gas guide passages 44, that is, the intake ends 44a of the four gas guide passages 44 are gathered into and communicated with the same vent hole 22. The four gas guide passages 44 are spaced apart along the circumferential direction of the second gas uniformization space 41, and all of the exhaust ends 44b of the four gas guide passages 44 communicate with the second gas uniformization space 41. By adopting the above structure, the gas guide flow path structure can transport the purge gas from a central position close to the base 1 along different directions to the edge positions of the base 1, and reach different positions in the circumferential direction of the second gas homogenization space 41, thereby not only shortening the path of the purge gas and improving the flow speed of the purge gas, but also improving the uniformity of the purge gas.

[0043] 2, the four gas guide channels 44 communicating with one of the vent holes 22 and the four gas guide channels 44 communicating with the other vent holes 22 can be distributed symmetrically with respect to the axis of the base 1, and all the gas guide channels 44 (i.e., eight gas guide channels 44) have approximately the same length, and the exhaust ends 44b (i.e., eight exhaust ends 44b) of all the gas guide channels 44 are evenly distributed along the circumferential direction of the second gas uniformization space 41. In this way, the purge gas flowing into each gas guide channel 44 from the intake end 44a can flow simultaneously to each exhaust end 44b along a path of the same length, and can flow uniformly from each exhaust end 44b into the second gas uniformization space 41, thereby further improving the uniformity of the purge gas. Of course, in actual applications, the gas guide channel group may be three groups or more groups, and the embodiments of the present application do not limit the number and arrangement of the ventilation holes 22 and the gas guide channel 44, and those skilled in the art can adjust the settings themselves according to actual situations.

[0044] 2, an annular groove and a plurality of straight grooves are formed on the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a), the annular groove is fitted to the surface of the carrier 2 facing the base 1 (i.e., the top surface) to form the second gas uniformization space 41, and each straight groove is fitted to the surface of the carrier 2 facing the base 1 (i.e., the top surface) to form the gas guide passage 44. However, the embodiment of the present application is not limited thereto, and an annular groove and a plurality of straight grooves may be formed on the surface of the carrier 2 facing the base 1 (i.e., the top surface), the annular groove is fitted to the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a) to form the second gas uniformization space 41, and each straight groove is fitted to the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a) to form the gas guide passage 44. Alternatively, an annular groove and multiple straight grooves may be formed on both the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a) and the surface of the carrier 2 facing the base 1 (i.e., the top surface), and the annular groove on the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a) and the annular groove on the surface of the carrier 2 facing the base 1 fit together to form a second gas homogenization space 41, and each straight groove on the surface of the base 1 facing the carrier 2 (i.e., the bottom surface 14a) and each straight groove on the surface of the carrier 2 facing the base 1 (i.e., the top surface) fit together to form a gas guide passage 44.

[0045] In one embodiment of the present application, as shown in Figures 3, 4A and 4B, the mounting device further includes a support shaft 6, which is located below the carrier 2 and is used to support the carrier 2. Optionally, as shown in Figure 4A, a through hole 71 is provided at the bottom of the process chamber 7, and the lower end of the support shaft 6 passes through the through hole 71 and extends to the outside of the process chamber 7 so as to be connected to a lifting drive source (not shown). In addition, a bellows 9 is further provided outside the process chamber 7, which is fitted into the support shaft 6, and the lower end of the bellows 9 is sealedly connected to the lower flange 8, and the upper end of the bellows 9 is sealedly connected to the bottom of the process chamber 7 through the upper flange 10, and the bellows 9 is used to seal the through hole 71, thereby ensuring the sealing of the inside of the process chamber 7.

[0046] In addition, a first gas uniformization flow path structure is provided on the surface of the support shaft 6 facing the carrier 2 (i.e., the upper surface 6a). The first gas uniformization flow path structure corresponds to and communicates with the intake ends of each vent hole 22, and the first gas uniformization flow path structure communicates with a purge gas source. The first gas uniformization flow path structure is used to achieve a gas uniforming effect on the flowing purge gas. In some embodiments, the first gas uniformization flow path structure includes at least one first arc-shaped flow path 61, and the first arc-shaped flow path 61 extends along the circumferential direction of the support shaft 6, and each first arc-shaped flow path 61 is provided corresponding to two of the vent holes 22, and the intake ends of the two vent holes 22 are respectively communicated with both ends 61a of the first arc-shaped flow path 61, and the first arc-shaped flow path 61 is provided with an intake port 61b communicating with a purge gas source at a midpoint position. The purge gas supplied from the purge gas source first enters the first circular arc passage 61 through the inlet 61b of the first circular arc passage 61, then simultaneously branches into both ends 61a of the first circular arc passage 61, and then flows into the corresponding gas guide passage 44 through the two corresponding vents 22. The first circular arc passage 61 not only achieves a gas uniforming effect on the flowing purge gas, but also makes the path of the purge gas flowing through each vent 22 the same, thereby realizing the uniform distribution of the purge gas; and at least one first circular arc passage 61 is provided between the surface of the support shaft 6 facing the carrier 2 (i.e., the upper surface 6a) and the bottom surface of the carrier 2, which further simplifies the structure and reduces the difficulty of processing and manufacturing, thereby greatly reducing the application and manufacturing costs.

[0047] In addition, in this embodiment, there are a total of two air vents 22, and in this case, one first arc-shaped flow path 61 is provided corresponding to the two air vents 22. However, the embodiment of the present application is not limited to this. In actual applications, the number and arrangement method of the first arc-shaped flow paths 61 can be set based on the specific number of air vents 21, and those skilled in the art can adjust the settings themselves according to actual situations.

[0048] In the embodiment of the present application, as shown in Fig. 4, Fig. 5 and Fig. 6, in order to realize the vacuum suction function of the mounting device, the base 1 (for example, the base body 14) is further provided with a plurality of first suction holes 16 penetrating the base 1, for example, four first suction holes 16 are shown in Fig. 6, and the plurality of first suction holes 16 are evenly distributed along the circumferential direction of the base 1, and as shown in Fig. 7, the carrier 2 is provided with a plurality of second suction holes 23 penetrating the carrier 2, and the second suction holes 23 and the first suction holes 16 are the same in number and are provided in one-to-one correspondence. In addition, as shown in Fig. 4B, a second gas equalizing flow path structure is further provided on the surface (i.e., the upper surface 6a) of the support shaft 6 facing the carrier 2, and the second gas equalizing flow path structure corresponds to and communicates with the intake ends of the second suction holes 23, and the second gas equalizing flow path structure communicates with the vacuum suction device. The second gas equalizing flow path structure is used to achieve a gas equalizing effect on the flowing gas. In some optional embodiments, the second gas equalization flow passage structure includes at least one second arc-shaped flow passage 62, and the second arc-shaped flow passage 62 extends along the circumferential direction of the support shaft 6. As shown in FIG. 5, each second arc-shaped flow passage 62 is provided corresponding to two of the second suction holes 23, and the intake ends of the two second suction holes 23 are respectively connected to both ends 62a of the second arc-shaped flow passage 62. The second arc-shaped flow passage 62 is provided with an intake port connected to a vacuum suction device at its midpoint. Taking the case where there are four second suction holes 23 as an example, as shown in FIG. 4, two second suction holes 23 correspond to one second arc-shaped flow passage 62, providing a total of two second arc-shaped flow passages 62, both of which are distributed symmetrically with respect to the axis of the base 1. In this case, the second gas equalization flow passage structure further includes a third arc-shaped flow passage 63, which extends along the circumferential direction of the support shaft 6, and both ends 63a of the third arc-shaped flow passage 63 are connected to the two second arc-shaped flow passages 62 at the midpoint positions of the two second arc-shaped flow passages 62, and the third arc-shaped flow passage 63 is connected to a vacuum suction device at the midpoint position. The third arc-shaped flow passage 63 can be connected to a vacuum suction device, for example, via a straight passage 64, the exhaust end 64a of which is connected to the midpoint of the third arc-shaped flow passage 63, and the intake end 64b of the straight passage 64 is connected to the vacuum suction device.In this embodiment, there are a total of four second suction holes 23, and in this case, two second arc-shaped channels 62 and one third arc-shaped channel 63 are provided corresponding to the four second suction holes 23, but the embodiment of the present application is not limited thereto, and in actual applications, the number and arrangement of the second arc-shaped channels 62 and the third arc-shaped channels 63 can be set based on the specific number of the second suction holes 23, and those skilled in the art can adjust the settings according to the actual situation. In addition, if there is only one second arc-shaped channel 62, the third arc-shaped channel 63 can be omitted. By using the first arc-shaped channel 61, the second arc-shaped channel 62, and the third arc-shaped channel 63 in combination, it is possible to realize not only the separation between the vacuum suction gas channel and the edge purge gas channel, but also the uniform distribution of the purge airflow and the vacuum suction airflow.

[0049] In one embodiment of the present application, as shown in Figures 1 and 8, the stopper ring structure 3 includes an annular main body 33, and a cover ring 31 protruding toward the base 1 (e.g., the base main body 14) is provided on the inner wall of the annular main body 33, and an air blow flow path 51 is formed by providing a gap between the inner wall of the cover ring 31 and the outer wall of the base 1. Specifically, the annular body 33 may adopt a circular sleeve structure, and the top of the inner peripheral wall of the annular body 33 may be integrally formed with a cover ring 31, the inner peripheral wall of the cover ring 31 surrounds the outer peripheral wall of the base 1 and has a gap therebetween, and the gap is used to form an annular air blow passage 51, and since the diameter of the upper surface of the base 1 is smaller than the diameter of the wafer 100, the purge gas blown out of the air blow passage 51 can flow through the exposed areas of the bottom and side of the wafer 100, and since the air blow passage 51 is annular and is arranged around the circumference of the base 1, the purge gas can be blown out of the air blow passage 51 in the circumferential direction at the same time, thereby realizing the uniform purging of the bottom and side of the wafer 100. By adopting the above design, the embodiment of the present application is not only simple in structure, but also greatly improves the yield of the mounting device due to the simple structure, thereby further reducing the application and maintenance costs. In addition, the embodiment of the present application does not limit the specific embodiment of the cover ring 31 and the stopper ring structure 3, for example, the two are separate structures and fixedly connected by welding. Therefore, the embodiment of the present application is not limited thereto, and a person skilled in the art can adjust the settings by himself according to the actual situation.

[0050] In one embodiment of the present application, as shown in Figs. 1 to 8, a mounting ring 11 protruding toward an inner peripheral wall of an annular body 33 is provided on an outer peripheral wall of a base body 14, and a wrap ring 32 protruding toward the base body 14 is further provided in an area of ​​the inner peripheral wall of the annular body 33 located below the cover ring 31. The wrap ring 32 is stacked on the mounting ring 11, and a gap is provided between the wrap ring 32 and the outer peripheral wall of the base body 14, thereby forming a first gas homogenization space 52. Specifically, the inner diameter of the wrap ring 32 is larger than the inner diameter of the cover ring 31, that is, the cover ring 31 and the wrap ring 32 are both integrally formed with the inner peripheral wall of the annular body 33, forming a step structure. Furthermore, the relative positions between the wrap ring 32 and the mounting ring 11 can be regulated by a stopper structure, and for example, the two can be fixed together by a pin. By adopting the above design, the embodiment of the present application can form the first gas uniformization space 52 with a simple structure, which is not only easy to process and manufacture, but also stabilizes the embodiment structure of the present application and extends the service life. Note that the embodiment of the present application does not limit the specific embodiment of the first gas uniformization space 52, for example, a groove is opened on the inner peripheral wall of the annular body 33, or a groove is opened on the outer peripheral wall of the base body 14, and the two grooves form the first gas uniformization space 52 independently or by fitting together. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0051] 1 to 8, a protruding gas restricting ring 12 is further provided between the mounting ring 11 and the cover ring 31 on the outer circumferential wall of the base body 14, and a gap is formed between the gas restricting ring 12 and the cover ring 31 to form a gas restricting passage 53, which is used to communicate the air blow passage 51 and the first gas homogenization space 52. Specifically, a gas restricting ring 12 is further integrally formed on the outer circumferential wall of the base body 14, and the gas restricting ring 12 may be located on the top of the mounting ring 11, and its outer diameter is smaller than that of the mounting ring 11, that is, the outer circumferential wall of the base body 14 is formed with two steps from top to bottom, and the upper surface of the gas restricting ring 12 and the upper surface of the mounting ring 11 are each a stepped surface with two steps, which simplifies the structure of the embodiment of the present application. Furthermore, the inner peripheral wall of the wrap ring 32, the upper surface of the mounting ring 11, the outer peripheral wall of the gas confinement ring 12, and the bottom surface of the cover ring 31 are fitted together to form a first gas uniformization space 52, and a gap is provided between the bottom surface of the cover ring 31 and the upper surface of the gas confinement ring 12 to form a gas uniformization passage 53. One end of the gas uniformization passage 53 is connected to the first gas uniformization space 52, and the other end is connected to the bottom of the air blow passage 51. The gas uniformization passage 53 can perform gas uniformization by increasing the pressure of the purge gas flowing out of the first gas uniformization space 52, thereby increasing the gas uniformization time of the purge gas in the first gas uniformization space 52 and improving the gas uniformization effect, thereby further improving the purge uniformity of the air blow passage 51, and further improving the wafer uniformity and process yield. It should be noted that the embodiment of the present application does not limit the specific embodiment of the gas restriction passage 53, and for example, a blocking structure may be provided at the communication point between the air blow passage 51 and the first gas uniformization space 52 to increase the pressure in the first gas uniformization space 52, thereby improving the gas uniformization effect. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0052] In one embodiment of the present application, as shown in FIG. 8, the ventilation cross section of the gas restriction flow path 53 is smaller than that of the air blow flow path 51, and the ventilation cross section of the air blow flow path 51 is smaller than that of the first gas uniformization space 52. Specifically, the ventilation cross section of the gas restriction flow path 53 is smaller than that of the air blow flow path 51, and the ventilation cross section of the air blow flow path 51 is smaller than that of the first gas uniformization space 52, and specifically, the ventilation cross section is a cross section tangent to the air flow direction, and the air flow pressure of the first gas uniformization space 52 is increased, thereby further improving the gas uniformization efficiency and gas uniformization effect. Optionally, the ventilation cross section of the connection flow path 15 may be smaller than the ventilation cross sections of the first gas uniformization space 52 and the second gas uniformization space 41, and larger than the ventilation cross section of the gas restriction flow path 53. In this way, the second gas uniformization space 41 can be pressurized and gas uniformized, and the air flow speed can be improved, thereby improving the edge purge efficiency. In practical application, the connecting passage 15 is used to boost and uniformize the purge gas in the second gas uniformizing space 41, and then the gas enters the first gas uniformizing space 52 through the connecting passage 15, and the gas restricting passage 53 is used to boost and uniformize the purge gas in the first gas uniformizing space 52, and finally the bottom and side of the wafer 100 are purged through the gas restricting passage 53 and the air blowing passage 51. By using the first gas uniformizing space 52, the second gas uniformizing space 41, the connecting passage 15 and the gas restricting passage 53 in combination, the second level of boost and uniformization can be realized, which further improves the uniformity of the purge gas, and further improves the uniformity of the wafer 100 and the process yield.

[0053] In order to further explain the beneficial effects of the first embodiment of the present application, a simulation test is carried out on a specific embodiment of the present application with reference to Figures 9A to 9D below. Specifically, two vent holes 22 and eight gas guiding channels 44 are selected as an example to perform a simulation of the airflow field, and the specific simulation result is shown in Figure 9A, in which the purge gas enters each gas guiding channel 44 at a high speed through each vent hole 22, and the gas is homogenized after reaching the second gas homogenization space 41, but the simulation result shows that the airflow distribution in the second gas homogenization space 41 is not completely uniform, that is, the airflow speed at the exhaust port of the gas guiding channel 44 is large, and the airflow speed at the point away from the exhaust port of the gas guiding channel 44 is small, and the difference in the flow speed of different regions of the second gas homogenization space 41 is large, and the airflow is non-uniform. After the purge gas is homogenized through the second gas homogenization space 41, it is restricted and boosted through each gas restriction hole in the connecting passage 15, and then enters the first gas homogenization space 52, and reaches the first gas homogenization space 52 to perform second gas homogenization. The simulation result of the airflow field in the first gas homogenization space 52 is shown in Figure 9B, the difference in airflow speed in the first gas homogenization space 52 is small, and the airflow is relatively uniform, so that the airflow uniformity in the first gas homogenization space 52 is improved compared with the second gas homogenization space 41, and the airflow is relatively uniform. The purge gas is restricted and boosted through the gas restriction passage 53, and the simulation result of the airflow field in the gas restriction passage 53 is shown in Figure 9C, the airflow speed in the gas restriction passage 53 is almost the same, the difference in speed is small, and the air blow is uniform, which is shown in the black part in Figure 9C. After the purge gas reaches the air blow passage 51, the simulation result of the airflow field shows that the airflow speed in the air blow passage 51 is almost consistent, as shown in FIG. 9D, so that the air blow passage 51 can uniformly blow air onto the edge of the wafer.

[0054] In one embodiment of the present application, the base 1, the carrier 2, and the stopper ring structure 3 are all made of aluminum nitride ceramic material. Specifically, the substrate, the carrier 2, and the stopper ring structure 3 are all made of aluminum nitride ceramic material, so that the embodiment of the present application can uniformly purge the edge of the wafer 100, and the mounting device has the advantages of high temperature resistance, small particle contamination, and greatly reduced metal contamination, which not only can improve the wafer process yield, but also greatly improve the wafer process uniformity. However, the embodiment of the present application does not limit the specific materials of each of the above members, and for example, other types of ceramic materials may be used as long as they can meet the above requirements. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0055] Second Example The semiconductor process equipment mounting device of the embodiment of the present application, compared to the first embodiment, similarly includes a base 1, a carrier 2, and a stopper ring structure 3, and the structures and functions of these components are similar to those of the first embodiment. Therefore, only the differences between this embodiment and the first embodiment will be described in detail below.

[0056] Specifically, as shown in FIG. 10, in this embodiment, a heating tube 13 for heating the wafer 100 is provided in the base 1, and the heating tubes 13 may be provided corresponding to different regions of the base 1, for example, as shown in FIG. 10, there are two heating tubes 13, which are provided corresponding to the central region and the edge region of the base 1, respectively, thereby realizing partition temperature control.

[0057] 11, a gas guide groove 311 is provided at a connection between the upper surface and the inner peripheral surface of the cover ring 31, the gas guide groove 311 is annular and provided along the circumferential direction of the cover ring 31, the bottom surface of the gas guide groove 311 is lower than the upper surface of the base 1 (e.g., the base body 14), and the diameter of the circumferential side surface of the gas guide groove 311 is larger than the diameter of the wafer 100, and the gas guide groove 311 communicates with the air blow flow path 51 so as to guide the purge gas blown out from the air blow flow path 51 to the bottom surface and side surface of the wafer 100. Specifically, the gas guide groove 311 is opened at a location close to the inner peripheral wall of the cover ring 31, and for example, an open groove for forming the gas guide groove 311 is opened between the upper surface and the inner peripheral wall of the cover ring 31. More specifically, the upper surface of the cover ring 31 is flush with the upper surface of the base 1, and the bottom surface of the gas guide groove 311 is lower than the upper surface of the base 1; that is, when the wafer 100 is placed on the upper surface of the base 1, the wafer 100 can be restricted inside by the gas guide groove 311, and a guide gap is formed between the gas guide groove 311 and the bottom and side surfaces of the wafer 100. When the purge gas of the air blow passage 51 is purged to the bottom surface of the wafer 100, the gas guide groove 311 can guide the purge gas to the side surface of the wafer 100, thereby preventing the formation of back plating and side plating, that is, preventing the deposition of thin film on the bottom and side surfaces of the wafer 100, and further improving the yield of the wafer 100. By adopting the above design, not only can the airflow field be made more uniform, but also the edge air blow of the wafer 100 can be made more uniform, which further improves the uniformity of the wafer 100 and improves the process yield. It should be noted that the embodiment of the present application is not limited to including the gas guide groove 311, and for example, the top surface of the cover ring 31 is lower than the top surface of the base 1, so that there is a gap between the cover ring 31 and the bottom surface of the wafer 100, thereby realizing a function similar to the gas guide groove 311. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0058] 11 , a positioning structure is provided between the two overlapping surfaces of the wrap ring 32 and the mounting ring 11, and the positioning structure includes a positioning protrusion and a positioning recess, which are fitted together to regulate the relative position of the wrap ring 32 and the mounting ring 11, thereby realizing the positioning of the stopper ring structure 3 and the base 1. Specifically, the positioning protrusion is, for example, a positioning bump 321 protruding from the bottom surface of the wrap ring 32, and the positioning recess is, for example, a positioning groove 111 opened in the upper surface of the mounting ring 11, and the positioning bump 321 is fitted into the positioning groove 111 to regulate the relative position between the stopper ring structure 3 and the base 1.

[0059] Optionally, the positioning protrusions are multiple, for example, three, and the multiple positioning protrusions are distributed at equal intervals along the circumferential direction of the mounting ring 11, and the positioning recesses and positioning protrusions are the same in number and are provided in one-to-one correspondence. By adopting the above design, it is not only possible to improve the stability between the stopper ring structure 3 and the base 1, but also to reduce the processing difficulty, thereby extending the service life and greatly reducing the installation and removal maintenance costs. Note that the examples of the present application do not limit the specific embodiment of the positioning structure, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0060] In the embodiment of the present application, as shown in Figures 11 and 13, each gas restriction hole in the connecting passage 15 is a straight through hole, but the embodiment of the present application is not limited thereto. For example, as shown in Figure 12, each gas restriction hole in the connecting passage 15 includes a first straight through hole 151 and a second straight through hole 152 arranged in sequence in the vertical direction, the first straight through hole 151 is located above the second straight through hole 152, and the diameter of the first straight through hole 151 is smaller than the diameter of the second straight through hole 152. The diameter of the first straight through hole 151 near the top of the mounting ring 11 is smaller than the diameter of the second straight through hole 152 near the bottom of the mounting ring 11, that is, the connecting passage 15 adopts a different diameter structure, so that the first straight through hole 151 with a smaller diameter can further reduce the flow rate of the purge gas, and further improve the pressure and gas uniformization effect of the purge gas in the second gas uniformization space 41, thereby further improving the uniformity of the edge purge.

[0061] It should be noted that the embodiments of the present application do not limit the specific structure of each gas restriction hole in the connecting flow path 15, and for example, the gas restriction hole may be a multi-stage stepped hole or a tapered hole so as to perform gas restriction by increasing pressure in the second gas homogenization space 41. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0062] In one embodiment of the present application, as shown in Figures 11 and 14, each vent hole 22 is provided through the carrier 2, for example, two vent holes 22 may be provided at the center of the carrier 2, and each vent hole 22 may be linearly connected to the second gas uniformization space 41 through three gas guide channels 44. The three gas guide channels 44 may have one end connected to the vent hole 22 and the other end connected to the second gas uniformization space 41, and the gas guide channels 44 may be linearly connected to the vent hole 43 and the second gas uniformization space 41. By adopting the above design, the multiple vent holes 22 are all connected to the second gas uniformization space 41 through the multiple gas guide channels 44, so that the path of the purge gas is short and the uniformity is relatively favorable, which can not only improve the flow rate of the purge gas, but also greatly improve the application and maintenance costs of the present application. It should be noted that the embodiment of the present application does not limit the number and positions of the ventilation holes 22 and the gas guide passages 44, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0063] 15, one vent hole 22 may be provided on one side of the center of the carrier 2, and one end of each of the three gas guide channels 44 communicates with the vent hole 22, and the other end of each of the three gas guide channels 44 communicates with the second gas homogenization space 41, and are spaced apart from each other along the circumferential direction. Since the carrier 2 is made of a ceramic material, the number of the vent holes 22 is reduced, which can further improve the yield of the carrier 2 and thereby further reduce the application and maintenance costs of the embodiment of the present application.

[0064] In the embodiment of the present application, as shown in Fig. 14, an annular groove and a number of straight grooves are opened on the surface of the carrier 2 facing the base 1 (i.e., the upper surface), the annular groove is fitted to the surface of the base 1 facing the carrier 2 (i.e., the bottom surface) to form the second gas uniformization space 41, and each straight groove is fitted to the surface of the base 1 facing the carrier 2 (i.e., the bottom surface) to form the gas guide channel 44. Specifically, an annular groove may be opened on the surface of the carrier 2 facing the base 1 (i.e., the upper surface), and the annular groove is provided coaxially with the carrier 2 and adjacent to the edge of the carrier 2. When the carrier 2 is stacked on the bottom of the base 1, the annular groove and the surface of the base 1 facing the carrier 2 (i.e., the bottom surface) are fitted to each other to form the second gas uniformization space 41. By adopting this design, the structure of the embodiment of the present application is simple and easy to process and manufacture, thereby greatly reducing application and maintenance costs. In addition, a number of linear grooves are further provided on the surface of the carrier 2 facing the base 1 (i.e., the top surface), and the linear grooves are located between the vent holes 22 and the annular groove, and the linear grooves are fitted to the surface of the base 1 facing the carrier 2 (i.e., the bottom surface) to form a number of gas guide channels 44, which are used to communicate between the vent holes 22 and the second gas uniformization space 41. By adopting this design, the embodiment of the present application is easy to process and manufacture, and thus the application and maintenance costs are greatly reduced. However, the embodiment of the present application does not limit the specific structure of the second gas uniformization space 41 and the gas guide channels 44, for example, the annular groove and the linear groove are both formed on the surface of the base 1 facing the carrier 2 (i.e., the bottom surface), or the surface of the base 1 facing the carrier 2 (i.e., the bottom surface) and the surface of the carrier 2 facing the base 1 (i.e., the top surface) both have an annular groove and a linear groove. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings themselves according to the actual situation.

[0065] In order to further explain the beneficial effects of the embodiment of the present application, a simulation test is carried out on a specific embodiment of the present application with reference to Figures 16A to 16D below. Specifically, two vent holes 22 and six gas guide channels 44 are selected as an example to perform a simulation of the airflow field, and the specific simulation result is shown in Figure 16A, in which the purge gas enters the gas guide channel 44 through the vent holes 22 at a high speed, and the gas is homogenized after reaching the second gas homogenization space 41, but the simulation result shows that the airflow distribution in the second gas homogenization space 41 is not completely uniform, that is, the airflow speed at the exhaust port of the gas guide channel 44 is large, and the airflow speed at the point away from the exhaust port of the gas guide channel 44 is small, and the difference in the flow speed of different regions of the second gas homogenization space 41 is large, and the airflow is non-uniform. After the purge gas is homogenized through the second gas homogenization space 41, it is restricted and boosted through each gas restriction hole in the connecting passage 15, and then enters the first gas homogenization space 52, and reaches the first gas homogenization space 52 to perform second gas homogenization. The simulation result of the airflow field in the first gas homogenization space 52 is shown in Figure 16B, the difference in airflow speed in the first gas homogenization space 52 is small, and the airflow is relatively uniform, so that the airflow uniformity in the first gas homogenization space 52 is improved compared with the second gas homogenization space 41, and the airflow is relatively uniform. The purge gas is restricted and boosted through the gas restriction passage 53, and the simulation result of the airflow field in the gas restriction passage 53 is shown in Figure 16C, the airflow is almost the same in the gas restriction passage 53, the difference in flow speed is small, and the air blow is uniform, as shown in the black part in Figure 16C. After the purge gas reaches the air blow passage 51, the simulation result of the airflow field shows that the airflow speed in the air blow passage 51 is almost consistent, as shown in FIG. 16D, so that the air blow passage 51 can uniformly blow air onto the edge of the wafer.

[0066] In summary, the mounting device according to the embodiment of the present application has a stopper ring structure fitted on the outer periphery of the base, an air blow passage and a first gas uniformizing space are formed between the inner periphery wall of the stopper ring structure and the outer periphery wall of the base, and a gas passage structure is formed between the base and the carrier, the gas passage structure is used to transport purge gas to the first gas uniformizing space through the connecting passage in the base, the first gas uniformizing space is used to uniformize the purge gas, and the uniformized purge gas is blown out through the air blow passage to purge the bottom and side of the wafer. By using the first gas uniformizing space to uniformize the purge gas, the gas can be blown out uniformly from the air blow passage, which can ensure that the edge air blow has the same effect on the air flow field of the bottom and side of the wafer, and further improve the consistency of the process deposition and the process yield. In addition, the air blow passage and the first gas homogenization space are both formed between the base and the stopper ring structure, and the gas passage structure is formed between the base and the carrier, so that the structure is simple and easy to process and manufacture, thereby significantly reducing application and manufacturing costs.

[0067] Based on the same inventive idea, the embodiments of the present application provide a semiconductor processing equipment, which includes a process chamber and a mounting device according to the above embodiments. For example, as shown in FIG. 4A, the mounting device (including but not limited to a base 1 and a carrier 2) is installed in the process chamber 7 and is used to mount a wafer.

[0068] The semiconductor process equipment according to the embodiment of the present application, by adopting the mounting apparatus according to the embodiment of the present application, can not only reduce manufacturing costs but also improve the consistency of process deposition, thereby significantly improving the process yield.

[0069] It can be understood that the above embodiments are merely exemplary embodiments adopted to explain the principles of the present invention, but the present invention is not limited thereto. Those skilled in the art can make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the protection scope of the present invention.

[0070] In addition, in the description of this application, the orientations or positional relationships indicated by the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc. are based on the orientations or positional relationships shown in the drawings, and are intended to facilitate and simplify the description of the present invention, but do not indicate or imply that such devices or elements have a specific orientation or are constructed and operated in a specific orientation, and therefore are not intended to limit the present invention.

[0071] The terms "first" and "second" are used for descriptive purposes only and should be understood as not indicating or implying a relative importance or number of the indicated technical features. Thus, a feature qualified with "first" or "second" may explicitly or implicitly include one or more of said features. In the present description, unless otherwise stated, the meaning of "plurality" is two or more than two.

[0072] In the present description, unless otherwise clearly specified or limited, the terms "attached," "coupled," and "connected" should be understood in a broad sense, for example, they may be fixedly connected, detachably connected, or integrally connected, may be directly connected or indirectly connected via an intermediate medium, or may be internal communication between two elements. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0073] In the description herein, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

[0074] The above are only some embodiments of the present application, and what should be described is that those skilled in the art can make some improvements and modifications without departing from the principles of the present application, and these improvements and modifications should also be considered as the protection scope of the present application.

Claims

1. A mounting device for semiconductor processing equipment, which is provided in a process chamber of the semiconductor processing equipment, includes a base, a carrier, and a stopper ring structure, an upper surface of the base is used for placing a wafer thereon, the stopper ring structure is fitted around the outer periphery of the base and is used for regulating the position of the wafer, an air blow passage and a first gas uniformization space are formed between an inner periphery wall of the stopper ring structure and an outer periphery wall of the base, the first gas uniformization space is connected to the air blow passage, the carrier and the base are stacked on each other, the carrier is located below the base, a gas passage structure is provided between the carrier and the base, a connecting passage is provided in the base, and the gas passage structure is connected to the first gas uniformization space via the connecting passage, a gas flow path structure for transporting purge gas to the first gas uniformization space via the connecting flow path, the first gas uniformization space for uniformizing the flowing purge gas, and the air blow flow path for blowing out the uniformized purge gas in order to purge a bottom surface and a side surface of the wafer.

2. the gas flow path structure includes a gas guide flow path structure and a second gas uniformization space, the gas guide flow path structure communicates with the second gas uniformization space, and the second gas uniformization space communicates with the first gas uniformization space via the connection flow path, 2. The mounting apparatus of claim 1, wherein the gas guide channel structure is used to transport the purge gas to the second gas uniformization space, and the second gas uniformization space is used to uniformize the flow of the purge gas.

3. 3. The mounting apparatus according to claim 2, wherein a volume of the second gas uniformization space is larger than a volume of the first gas uniformization space, and / or a ventilation cross-section of the connecting flow path is smaller than the ventilation cross-sections of the first gas uniformization space and the second gas uniformization space.

4. 3. The mounting device according to claim 2, wherein the connecting flow path includes a plurality of gas restriction holes penetrating the base, the plurality of gas restriction holes being evenly arranged along a circumferential direction of the base, and both ends of each of the gas restriction holes respectively communicating with the first gas homogenization space and the second gas homogenization space.

5. 5. The mounting device of claim 4, wherein each of the gas restriction holes includes a first straight through hole and a second straight through hole arranged sequentially in a vertical direction, the first straight through hole is located above the second straight through hole, and the diameter of the first straight through hole is smaller than the diameter of the second straight through hole.

6. 3. The mounting device according to claim 2, wherein the gas guide passage structure includes at least one gas guide passage and at least one vent hole penetrating the carrier, each of the vent holes communicating with an intake end of at least one of the gas guide passages, the vent hole being used to communicate with a purge gas source, and the exhaust ends of the gas guide passages are evenly spaced apart along a circumferential direction of the second gas uniformization space, and all of them communicate with the second gas uniformization space.

7. One of the surface of the carrier facing the base and the surface of the base facing the carrier is provided with an annular groove and a plurality of straight grooves, and the other of the surface of the carrier facing the base and the surface of the base facing the carrier is fitted into the annular groove to form the second gas homogenization space and is fitted into each of the straight grooves to form the gas guide passage, or The mounting device of claim 6, characterized in that an annular groove and a plurality of straight grooves are formed on both the surface of the carrier facing the base and the surface of the base facing the carrier, the carrier is fitted into the annular groove in the base to form the second gas homogenization space, and the carrier is fitted into the plurality of straight grooves in the base to form the gas guide passage.

8. 7. The mounting device according to claim 6, further comprising a support shaft located below the carrier and used to support the carrier, a first gas uniformization flow path structure being provided on a surface of the support shaft facing the carrier, the first gas uniformization flow path structure corresponding to and communicating with the intake ends of each of the air holes, and the first gas uniformization flow path structure being connected to a purge gas source.

9. 9. The mounting device according to claim 8, wherein the first gas uniformalization flow path structure includes at least one first arcuate flow path, the first arcuate flow path extends along a circumferential direction of the support shaft, each of the first arcuate flow paths is provided corresponding to two of the air holes, intake ends of the two air holes are respectively connected to both ends of the first arcuate flow path, and the first arcuate flow path is provided with an intake port connected to the purge gas source at a midpoint position.

10. the base is further provided with a plurality of first suction holes penetrating the base, and the plurality of first suction holes are evenly distributed along a circumferential direction of the base; the carrier is further provided with a plurality of second suction holes penetrating the carrier, and the second suction holes and the first suction holes are the same in number and are provided in one-to-one correspondence; 9. The mounting device according to claim 8, wherein a second gas uniformizing flow path structure is further provided on a surface of the support shaft facing the carrier, the second gas uniformizing flow path structure corresponding to and communicating with an intake end of each of the second suction holes, and the second gas uniformizing flow path structure communicating with a vacuum suction device.

11. The mounting device of claim 10, characterized in that the second gas uniformalization flow path structure includes at least one second arc-shaped flow path, and the second arc-shaped flow path extends along a circumferential direction of the support shaft, each of the second arc-shaped flow paths is provided corresponding to two of the second suction holes, the intake ends of the two second suction holes are respectively connected to both ends of the second arc-shaped flow path, and the second arc-shaped flow path is provided with an intake port connected to a vacuum suction device at a midpoint position.

12. The second arcuate flow passages are two in number and are distributed symmetrically with respect to the axis of the support shaft; The mounting device of claim 11, characterized in that the second gas uniformization flow path structure further includes a third arc-shaped flow path, the third arc-shaped flow path extends along a circumferential direction of the support shaft, and both ends of the third arc-shaped flow path are connected to two of the second arc-shaped flow paths at midpoint positions of the two second arc-shaped flow paths, and the third arc-shaped flow path is connected to the vacuum suction device at the midpoint positions.

13. The mounting device described in claim 1, characterized in that the stopper ring structure includes an annular body, an inner wall of the annular body is provided with a cover ring protruding toward the outer wall of the base, and the air blow flow path is formed by having a gap between the inner wall of the cover ring and the outer wall of the base.

14. a gas guide groove is provided at a connection between an upper surface and an inner peripheral surface of the cover ring, the gas guide groove is annular and is provided along a circumferential direction of the cover ring, a bottom surface of the gas guide groove is lower than an upper surface of the base, and a diameter of a circumferential side surface of the gas guide groove is larger than a diameter of the wafer; 14. The mounting apparatus according to claim 13, wherein the gas guide groove is in communication with the air blow passage so as to guide the purge gas blown out of the air blow passage to the bottom and side surfaces of the wafer.

15. The base includes a base body, an outer peripheral wall of the base body is provided with a mounting ring protruding toward an inner peripheral wall of the annular body, and a wrap ring protruding toward the base body is further provided in an area of ​​the inner peripheral wall of the annular body located below the cover ring, 14. The mounting device according to claim 13, wherein the wrap ring is stacked on the mounting ring, and a gap is provided between the wrap ring and an outer peripheral wall of the base body to form the first gas homogenization space.

16. The mounting device of claim 15, wherein a positioning structure is provided between the two stacked surfaces of the wrap ring and the mounting ring, the positioning structure including a positioning protrusion and a positioning recess, and the positioning protrusion is fitted into the positioning recess so as to regulate the relative positions of the wrap ring and the mounting ring.

17. 16. The mounting device according to claim 15, wherein a protruding gas restriction ring is provided between the mounting ring and the cover ring on the outer peripheral wall of the base body, and a gap is formed between the gas restriction ring and the cover ring to form a gas restriction flow path, and the gas restriction flow path is used to communicate the air blow flow path and the first gas homogenization space.

18. the cross section of the gas restriction passage is smaller than the cross section of the air blow passage, and the cross section of the air blow passage is smaller than the cross section of the first gas uniformization space; 18. The mounting apparatus according to claim 17, wherein the cross section of the connection passage is larger than the cross section of the gas restriction passage.

19. 2. The mounting device according to claim 1, wherein the base, the carrier and the stopper ring structure are all made of aluminum nitride ceramic material.

20. A semiconductor process device comprising: a process chamber; and the mounting apparatus according to any one of claims 1 to 19, wherein the mounting apparatus is provided in the process chamber.

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