Semiconductor crystal wafer manufacturing apparatus and manufacturing method

Abstract

To provide semiconductor crystal wafer manufacturing apparatus and manufacturing method that can easily and reliably manufacture high-quality semiconductor crystal wafers.SOLUTION: A manufacturing method for a SiC wafer, which is a semiconductor crystal wafer, includes a groove processing step (STEP 100 / FIG. 1), a guide line forming step (STEP 110 / FIG. 1), a cutting step (STEP 120 / FIG. 1), and a grinding step (STEP 130 / FIG. 1).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an apparatus and method for manufacturing semiconductor crystal wafers, in which wafers are cut into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape. [Background technology]

[0002] Conventionally, as a manufacturing method for a SiC wafer, which is this type of semiconductor crystal wafer, as shown in Patent Document 1 below, a manufacturing method for a SiC wafer is known that includes, as a wafer shape forming step, an ingot forming step in which a lump of crystal-grown single crystal SiC is processed into a cylindrical ingot, a crystal orientation forming step in which a notch is formed in a part of the outer periphery to serve as a mark indicating the crystal orientation of the ingot, a slicing step in which the single crystal SiC ingot is sliced ​​and processed into a thin disk-shaped SiC wafer, a planarizing step in which the SiC wafer is planarized using abrasive grains having a hardness less than the modified Mohs hardness, an imprint forming step in which an imprint is formed, and a chamfering step in which the outer periphery is chamfered, next, as a process-affected layer removing step, a process-affected layer removing step in which the process-affected layer introduced into the SiC wafer in the preceding step is removed, and finally, as a mirror polishing step, a chemical mechanical polishing (CMP) step in which polishing is performed using a combination of the mechanical action of a polishing pad and the chemical action of a slurry. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-15646 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, such conventional methods for manufacturing SiC wafers have problems in that the manufacturing steps are complicated and the apparatus configuration is complicated, resulting in high manufacturing costs.

[0005] On the other hand, if the manufacturing process is simplified, it becomes difficult to stably obtain the quality required for SiC wafers.

[0006] SUMMARY OF THE PRESENT EMBODIMENTS An object of the present invention is to provide an apparatus and method for manufacturing semiconductor crystal wafers that can easily and reliably manufacture high-quality semiconductor crystal wafers. [Means for solving the problem]

[0007] The semiconductor crystal wafer manufacturing apparatus of the first invention is an apparatus for manufacturing a semiconductor crystal wafer, which cuts out wafers in slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, A groove processing drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a plurality of protrusions formed on the side surface corresponding to the plurality of grooves; a wire saw device for cutting the semiconductor crystal ingot into slices by advancing a plurality of wires disposed in the plurality of grooves while rotating the plurality of wires; a guideline forming means for forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the grooves formed on the side surface of the semiconductor crystal ingot; Equipped with The guideline forming means forms the cutting guideline in a scanning direction corresponding to a direction of travel of the wire of the wire saw device.

[0008] The semiconductor crystal wafer manufacturing apparatus of the first invention is configured with a groove-machining drum grindstone that forms a plurality of grooves around the entire side surface of a semiconductor crystal ingot and has a plurality of protrusions formed on its side surface that correspond to the plurality of grooves, and corresponding additional equipment.

[0009] The first additional equipment is a wire saw device that rotates multiple wires placed in multiple grooves formed across the entire side of a semiconductor crystal ingot.

[0010] The second additional equipment is a guideline forming means for forming cutting guidelines by scanning a laser beam of a transparent wavelength along each intended cutting surface, including each groove, with a focused point.

[0011] In the above configuration, multiple wires are accurately positioned in multiple grooves formed across the entire side surface of the semiconductor crystal ingot by the groove processing drum grinding wheel, and the cutting guidelines formed on each intended cutting surface act as a guide for cutting during cutting with the wires, making it possible to precisely cut the semiconductor crystal ingot into slices with the multiple wires.

[0012] That is, when the wire is placed in the groove and moves forward while rotating during cutting, the groove and the cutting guide line in the portion before cutting form an area with low cutting resistance, thereby serving as a guide for cutting.

[0013] Furthermore, by forming the cutting guide line in correspondence with the traveling direction of the wire, it is possible to continuously provide the wire with an area of ​​low cutting resistance while the wire is traveling.

[0014] In this way, according to the semiconductor crystal wafer manufacturing apparatus of the first aspect of the invention, it is possible to cut a semiconductor crystal ingot into slices with high precision, and to easily and reliably manufacture high quality semiconductor crystal wafers.

[0015] The semiconductor crystal wafer manufacturing apparatus of the second invention is the first invention, The guideline forming means forms the cutting guideline in a scanning direction that coincides with a direction of travel of the wire of the wire saw device.

[0016] According to the semiconductor crystal wafer manufacturing apparatus of the second aspect of the invention, by forming the cutting guide line to coincide with the direction of wire travel, it is possible to continuously provide the wire with an area of ​​low cutting resistance while the wire is actually traveling.

[0017] In this way, according to the semiconductor crystal wafer manufacturing apparatus of the second invention, it is possible to actually cut a semiconductor crystal ingot into slices with high precision, and to easily and reliably manufacture high quality semiconductor crystal wafers.

[0018] The semiconductor crystal wafer manufacturing apparatus of the third invention is either of the first or second invention, The guide line forming means is characterized in that the laser beam is incident on an end face of the semiconductor crystal ingot.

[0019] According to the semiconductor crystal wafer manufacturing apparatus of the third invention, the laser beam for forming the cutting guideline is incident on the end face of the semiconductor crystal ingot, and the distance to the focal point is determined and the wire is scanned along the traveling direction while maintaining that distance, thereby making it possible to easily and reliably form the cutting guideline.

[0020] In this way, according to the semiconductor crystal wafer manufacturing apparatus of the third aspect of the invention, cutting guidelines can be easily and reliably formed and the semiconductor crystal ingot can be cut into slices with high precision, making it possible to easily and reliably manufacture high quality semiconductor crystal wafers.

[0021] The semiconductor crystal wafer manufacturing apparatus of the fourth invention is an apparatus for manufacturing a semiconductor crystal wafer, which cuts out wafers in slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, A groove processing drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a plurality of protrusions formed on the side surface corresponding to the plurality of grooves; a wire saw device for cutting the semiconductor crystal ingot into slices by advancing a plurality of wires disposed in the plurality of grooves while rotating the plurality of wires; a guideline forming means for forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the grooves formed on the side surface of the semiconductor crystal ingot, along the intended cutting surfaces; Equipped with The guideline forming means forms cutting guidelines concentrically on the intended cutting surface by irradiating the laser beam from an end face or a side face of the semiconductor crystal ingot.

[0022] According to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, a plurality of wires are accurately positioned in a plurality of grooves formed across the entire side surface of the semiconductor crystal ingot by the groove processing drum grindstone, and in addition, cutting guidelines formed on each of the intended cutting surfaces act as a guide for cutting during cutting with the wires, making it possible to precisely cut the semiconductor crystal ingot into slices with the multiple wires.

[0023] That is, when the wire is placed in the groove and moves forward while rotating during cutting, the groove and the cutting guide line in the portion before cutting form an area with low cutting resistance, thereby serving as a guide for cutting.

[0024] Furthermore, by making the cutting guide lines concentric on the intended cutting surface, in addition to forming concentric circles by directing a laser beam from the end face of the semiconductor crystal ingot, it is possible to easily form concentric cutting guide lines by directing a laser beam from the side (for example, by rotating the ingot around its axis).

[0025] In this way, according to the semiconductor crystal wafer manufacturing apparatus of the fourth aspect of the invention, it is possible to easily form cutting guidelines while accurately cutting a semiconductor crystal ingot into slices, and thus to easily and reliably manufacture high-quality semiconductor crystal wafers.

[0026] A method for producing a semiconductor crystal wafer according to the fifth aspect of the present invention comprises the steps of: A method for manufacturing a semiconductor crystal wafer, comprising cutting a wafer into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, the method comprising the steps of: a groove processing step of forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot; a guideline forming step of forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the recessed grooves formed on the side surface of the semiconductor crystal ingot by the groove processing step, along the intended cutting surfaces; a cutting step of cutting the semiconductor crystal ingot into slices by advancing a plurality of wires arranged in the plurality of grooves formed in the groove processing step while rotating the wires, The guideline forming step is characterized in that the cutting guideline is formed in a scanning direction corresponding to a traveling direction of the wire in the cutting step.

[0027] The method for manufacturing a semiconductor crystal wafer of the fifth aspect of the invention carries out a groove processing step of forming grooves on the entire side of a semiconductor crystal ingot that correspond to the multiple convex portions of a groove processing drum, a guideline forming step of forming cutting guidelines on each of the intended cutting surfaces including the multiple grooves formed in the groove processing step, and a cutting step of cutting the semiconductor crystal ingot into slices by advancing and circulating a plurality of wires disposed in the multiple grooves formed in the groove processing step.

[0028] Here, multiple wires are accurately positioned in multiple grooves formed across the entire side surface of the semiconductor crystal ingot by the groove processing drum grinding wheel, and cutting guidelines formed on each intended cutting surface act as a guide for cutting during cutting with the wires, making it possible to precisely cut the semiconductor crystal ingot into slices with the multiple wires.

[0029] That is, when the wire is placed in the groove and moves forward while rotating during cutting, the groove and the cutting guide line form an area with low cutting resistance, which acts as a guide for cutting.

[0030] Furthermore, by forming the cutting guide line in correspondence with the traveling direction of the wire, it is possible to continuously provide the wire with an area of ​​low cutting resistance while the wire is traveling.

[0031] In this way, according to the method for producing a semiconductor crystal wafer of the fifth aspect of the invention, the semiconductor crystal ingot can be cut into slices with high precision, and high-quality semiconductor crystal wafers can be produced simply and reliably. [Brief description of the drawings]

[0032] [Figure 1] 1 is a flowchart showing all the steps of a method for producing a SiC wafer (semiconductor crystal wafer) according to the present embodiment. [Diagram 2] 2 is an explanatory diagram showing the details of a groove processing step in the manufacturing method of the SiC wafer in FIG. 1. [Diagram 3] 2 is an explanatory diagram showing the details of a guideline forming step and a cutting step in the manufacturing method of the SiC wafer in FIG. 1. [Figure 4] 2 is an explanatory diagram showing the grinding step in the method for producing the SiC wafer of FIG. 1. [Diagram 5] 10 is an explanatory diagram showing a modified example of the guide line forming step in the method for producing the SiC wafer of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] As shown in FIG. 1, in this embodiment, the manufacturing method for a SiC wafer, which is a semiconductor crystal wafer, is a method for obtaining SiC wafers sliced ​​from a SiC ingot ground into a cylindrical shape, and includes a groove processing step (STEP 100 / FIG. 1), a guide line formation step (STEP 110 / FIG. 1), a cutting step (STEP 120 / FIG. 1), and a grinding step (STEP 130 / FIG. 1).

[0034] The details of each step and the manufacturing apparatus for the SiC wafer of this embodiment will be described with reference to FIGS.

[0035] First, in the groove processing step (STEP 100 / FIG. 1), a common groove processing drum grindstone 20 is used to form a plurality of recessed grooves 11 around the entire side surface of the SiC ingot 10.

[0036] The groove processing drum grindstone 20 is a drum grindstone for forming multiple grooves 11 that run around the entire side surface of the SiC ingot 10, and has multiple protrusions 21 formed on the side surface corresponding to the multiple grooves 11.

[0037] Specifically, in the groove processing step (STEP 100 / Figure 1), groove processing drum grinding wheels 20, which have multiple protrusions 21 corresponding to multiple grooves 11 formed on their entire side surfaces, are pressed against a SiC ingot 10 while rotating them on mutually parallel rotation axes, thereby forming grooves 11.

[0038] At this time, the SiC ingot 10 is rotatably supported with both end faces thereof protected via a pair of protective plates 15, 15.

[0039] The protective plate 15 is made of, for example, a synthetic resin such as polyvinyl chloride, and is bonded to the SiC ingot 10 via an adhesive or the like as necessary.

[0040] The pair of protective plates 15, 15 can protect both ends of the SiC ingot 10 and prevent chipping or cracking at both ends. Therefore, a plurality of grooves 11 can be formed up to the edges of both end faces, and more SiC wafers 100, which will be described later, can be cut and obtained.

[0041] Furthermore, when the SiC ingot 10 is clamped and fixed to the rotating shaft, the protective plates 15, 15 can be processed (for example, drilled) as necessary to fix the SiC ingot 10. Additionally, even in this case, since no processing of the SiC ingot 10 itself is involved, the SiC ingot 10 is not damaged.

[0042] Next, as shown in FIG. 3(a), prior to cutting with the wire 40, a cutting guideline is formed on the surface to be cut in a guideline formation step (STEP 110 / FIG. 1).

[0043] The intended cutting surface is a surface including each of the grooves 11 formed in the groove processing step (STEP 100 / FIG. 1) (a circular surface shown by imaginary lines in the drawing, which is smaller than the outer diameter of the ingot by the width of the groove). A modified region of SiC crystal is partially formed in the SiC ingot 10 by positioning a focal point of a laser beam having a wavelength that is transparent to the SiC ingot 10 on the intended cutting surface. Then, a desired cutting guideline corresponding to the scanning direction is formed by scanning the focal point along the intended cutting surface.

[0044] As the guideline means for forming such cutting guideline, a laser oscillator for oscillating the above-mentioned laser beam and a condenser (lens) for condensing the laser beam inside the SiC ingot 10 are used.

[0045] Specifically, as shown in the cross-sectional view of the intended cutting surface in Fig. 3(b), a plurality of cutting guidelines are formed by scanning in the advancing direction of the wire 40 as indicated by the arrows in the figure. The intervals between these cutting guidelines may be uniform, but they may also be spaced apart so that the intervals become smaller toward the center and larger toward both the left and right sides.

[0046] By providing such variations in density, the cutting speed slows down in the center where the amount of cutting is greater as the wire advances (and conversely, the cutting speed is faster on both sides), causing the wire to curve. However, by gradually providing areas with low cutting resistance from both sides to the center, it is possible to prevent the wire 40 from curving and keep the wire straight, as shown in Figure 3(c).

[0047] The wire device used in the cutting process using such wire 40 (STEP 120 / Figure 1) cuts the SiC ingot 10 into slices by advancing multiple wires 40 passed between wire bobbins while rotating them (although various devices can be used).

[0048] When the wire 40 is placed in the groove 11 and moves forward while rotating during cutting, in addition to the groove 11 (where the outer diameter of the SiC ingot 10 is reduced), the cutting guideline makes the surface to be cut into an area with low cutting resistance, allowing the wire 40 to slide along the surface to be cut.

[0049] This allows the SiC ingot 10 to be precisely sliced ​​in one go by the multiple wires 40 arranged in the multiple grooves 11. That is, high-speed cutting by the wires 40 can be achieved, and the cut surface can be made flat and low-damage processed. In addition, even an SiC ingot 10 with poor crystallinity over the entire surface or in a specific region can be sliced ​​to a specified thickness, without being affected by the crystal orientation.

[0050] In addition, since the cutting resistance is small, the diameter of the wire 40 itself can be made small, and as a result, the cutting allowance can be minimized and the yield can be improved.

[0051] Next, as shown in FIG. 4, in the grinding process (STEP 130 / FIG. 1), in the first surface processing process (STEP 130(1)), one surface 110 of the cut surfaces is used as a support surface, and the remaining other surface 120 is subjected to mechanical polishing (high-precision grinding).

[0052] Specifically, in the first surface processing step (STEP 130(1)), grinding is performed by a mechanical polishing device 50 (ultra-high synthesis, high-precision grinding device) that performs mechanical polishing.

[0053] The mechanical polishing device 50 includes a spindle 51 and a diamond grinding wheel 53 on a platen 52 serving as a surface plate.

[0054] First, one surface 110 is set as the upper surface and supported by vacuum porous chuck 54, which is the suction plate of spindle 51, and the other surface 120 is set as the lower surface and is ground by diamond grindstone 53.

[0055] At this time, the spindle 51 and diamond grinding wheel 53 are rotated by a driving device (not shown), and the spindle 51 is pressed against the diamond grinding wheel 53 by a compressor (not shown) or the like, thereby subjecting the other surface 120 to grinding.

[0056] After the grinding process, the diamond grindstone 53 may be dressed using a dresser or the like.

[0057] Furthermore, the mechanical polishing apparatus 50 may have functional water supply pipes so that a plurality of types of functional water can be used during processing, if necessary.

[0058] Next, in a second surface processing step (STEP 130(2)), the other surface 120 that has been subjected to high-precision grinding in the first surface processing step is used as the upper surface, and high-precision grinding is performed on the one surface 110 in the same manner as in the first surface processing step.

[0059] That is, the other surface 120 is attached to the vacuum porous chuck 54 which is an attachment plate of the spindle 51 with the other surface 120 serving as the upper surface, and the one surface 110 is ground with the diamond grindstone 53 with the one surface 110 serving as the lower surface.

[0060] In this case as well, dressing may be performed by pressing a dresser or the like against the diamond grindstone 53, if necessary.

[0061] According to the mechanical polishing (high-precision grinding) process of the first surface processing step (STEP 130(1)) and the second surface processing step (STEP 130(2)), one of the transferless cut surfaces having high flatness obtained by the cutting and polishing step is used as a support surface (adsorption surface), and mechanical polishing (high-precision grinding) is sequentially performed on the remaining surfaces. This makes it possible to obtain high-quality SiC wafers by preventing so-called transfer, and also makes it possible to significantly simplify the complicated manufacturing process such as the conventional free grinding stone processing, i.e., multiple lapping from the first to fourth times.

[0062] More specifically, there is no need to change grinding stones to perform rough grinding or multiple finish grinding operations. For example, finishing can be performed directly in one grinding process using a grinding stone of #30,000 or higher. This is not only simple, but also has the advantage of being able to ensure a large amount of intrinsic semiconductor layer that can be used from the SiC wafer 100.

[0063] In the high-precision grinding process in the first surface processing step (STEP 130(1)) and the second surface processing step (STEP 130(2)), the size of the SiC wafer 100 is currently up to 8 inches, and wafers of each diameter are set according to the area of ​​the head (up to 12 inches are possible) and subjected to high-precision grinding process.

[0064] The above is the details of the manufacturing method of the SiC wafer of this embodiment. As described above in detail, according to the manufacturing method and device of the SiC wafer of this embodiment, the grooves 11 and the cutting guide lines are proactively formed to provide regions with low cutting resistance, which act as cutting guides, and the SiC ingot 10 can be cut into slices with high precision in one go using the multiple wires 40.

[0065] Next, a modified example of the cutting guide line will be described with reference to FIG. Specifically, as shown in Fig. 5(a), the cutting guide lines are not limited to the end faces of the SiC ingot 10, but may be formed concentrically on the intended cutting surface by irradiating a laser beam from the side, as shown in the cross-sectional view of the intended cutting surface in Fig. 5(b). For example, concentric cutting guide lines can be easily formed by rotating the SiC ingot 10 around an axis.

[0066] Also in this case, when the wire 40 arranged in the groove 11 advances while rotating during cutting, the cutting guide lines, in addition to the groove 11 in the uncut region, serve as a region with low cutting resistance and act as a guide for cutting. Also in this case, the multiple concentric cutting guide lines are denser toward the center of the SiC ingot 10, so that the wire 40 can be prevented from bowing and kept straight, as shown in FIG. 5(c).

[0067] In the above embodiment, the cutting guide lines are not limited to being aligned with the advancing direction of the wire 40 or being formed concentrically. The cutting guide lines may be formed in any direction that takes into account the advancing direction of the wire 40, and may be formed, for example, in a scanning direction that starts from the end point of cutting the wire 40 and radiates in the advancing and retracting direction of the wire (the retracting direction in this case).

[0068] In this case too, the cutting guidelines are denser in the center of the SiC ingot than on the left and right sides, so that areas with low cutting resistance are gradually provided from both sides to the center, preventing the wire 40 from becoming curved and keeping the wire straight.

[0069] Of course, instead of or in addition to being radially aligned from the end point of cutting of the wire 40, the cutting guidelines may be formed in a scanning direction radially aligned from the start point of cutting in the advancement / retraction direction of the wire (the advancement direction in this case).

[0070] In this way, by providing radial cutting guidelines originating from the start point and the end point of the cut, cutting at the start point and the end point can be performed with almost no cutting resistance, thereby significantly improving the cutting finish at these start point and end point of the cut.

[0071] Furthermore, the guideline formation process (STEP 110 / FIG. 1) of this embodiment may be applied to thin film processing for forming a backside for the purpose of reclamation of a wafer.

[0072] In the method for producing a SiC wafer according to the present embodiment, after the series of processes described above, a chemical mechanical polishing (CMP) step and a wafer cleaning step may be carried out as necessary.

[0073] Furthermore, in this embodiment, a method for manufacturing a semiconductor crystal wafer has been described in which a SiC wafer is manufactured from a SiC ingot, but the semiconductor crystal is not limited to SiC, and may be gallium phosphate, indium phosphide, silicon, or other compound semiconductors.

[0074] In the present embodiment, in the groove machining step (STEP 100 / FIG. 1), the SiC ingot 10 is rotatably supported with both end faces protected via a pair of protective plates 15, 15, but the present invention is not limited to this. For example, the pair of protective plates 15, 15 may be omitted and the SiC ingot 10 may be fixed directly to the rotating shaft.

[0075] Furthermore, in steps other than the groove machining step (STEP 100 / FIG. 1), for example, in the cutting step (STEP 120 / FIG. 1), processing may be performed with both end faces of SiC ingot 10 protected by a pair of protective plates 15, 15. [Explanation of symbols]

[0076] 1...SiC crystal (semiconductor crystal), 4...wire saw device, 10...SiC ingot (semiconductor crystal ingot), 11...groove, 15,15...pair of protective plates, 20...groove processing drum grinding wheel, 21...protrusion, 40...wire, 50...mechanical polishing device (ultra-high synthesis high precision grinding device), 51...spindle, 52...platen, 53...diamond grinding wheel, 54...vacuum porous chuck (suction plate), 100...SiC wafer (semiconductor crystal wafer), 110...one side, 120...other side.

Claims

1. A semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, comprising: A groove processing drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a plurality of protrusions formed on the side surface corresponding to the plurality of grooves; a wire saw device for cutting the semiconductor crystal ingot into slices by advancing a plurality of wires disposed in the plurality of grooves while rotating the plurality of wires; a guideline forming means for forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the grooves formed on the side surface of the semiconductor crystal ingot; Equipped with 4. A semiconductor crystal wafer manufacturing apparatus, comprising: a cutting guide line formed by a cutting member having a cutting direction that corresponds to a direction of travel of the wire of the wire saw device;

2. 2. The semiconductor crystal wafer manufacturing apparatus according to claim 1, 4. A semiconductor crystal wafer manufacturing apparatus, comprising: a cutting guide line formed by a cutting member having a cutting direction aligned with a direction of travel of the wire of the wire saw device;

3. 3. The semiconductor crystal wafer manufacturing apparatus according to claim 1, 3 is a diagram showing a semiconductor crystal wafer manufacturing apparatus according to the first embodiment of the present invention; FIG. 4 is a diagram showing a semiconductor crystal wafer manufacturing apparatus according to the first embodiment of the present invention;

4. A semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, comprising: A groove processing drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a plurality of protrusions formed on the side surface corresponding to the plurality of grooves; a wire saw device for cutting the semiconductor crystal ingot into slices by advancing a plurality of wires disposed in the plurality of grooves while rotating the plurality of wires; a guideline forming means for forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the grooves formed on the side surface of the semiconductor crystal ingot; Equipped with a cutting guide line forming means for forming cutting guide lines concentrically on the intended cutting surface by applying the laser beam to an end or side surface of the semiconductor crystal ingot;

5. A method for manufacturing a semiconductor crystal wafer, comprising cutting a wafer into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, the method comprising the steps of: a groove processing step of forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot; a guideline forming step of forming cutting guidelines by scanning a focused point of a laser beam having a wavelength that is transparent to the semiconductor crystal ingot along each of the intended cutting surfaces, including each of the recessed grooves formed on the side surface of the semiconductor crystal ingot by the groove processing step, along the intended cutting surfaces; a cutting step of cutting the semiconductor crystal ingot into slices by advancing a plurality of wires arranged in the plurality of grooves formed in the groove processing step while rotating the wires, 2. A method for manufacturing a semiconductor crystal wafer, wherein in the guideline formation step, the cutting guideline is formed in a scanning direction corresponding to a direction of travel of the wire in the cutting step.

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