Processing platform

Abstract

To provide a processing platform capable of enhancing conveyance efficiency of a wafer between a reaction chamber and a housing chamber.SOLUTION: A processing platform comprises: a conveyance chamber 1; a housing chamber 2; and a plurality of reaction chambers 3. In an inner part of the conveyance chamber, a first conveyance part 11 is installed. The housing chamber is communicated with the conveyance chamber, and mounts a wafer. In the first conveyance part, a plurality of gripping mechanisms 1111 is installed. All of a plurality of reaction chambers is communicated with the conveyance chamber, and in each reaction chamber, a wafer stage 31 is installed. By installing the plurality of reaction chambers, a processing reaction can be made to a plurality of wafer in the processing platform, and can install the plurality of gripping mechanisms. Then, conveyance efficiency of each wafer between the reaction chamber and the housing chamber can be enhanced.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to the field of semiconductor technology, and more particularly to process platforms. [Background technology]

[0002] In a wafer processing platform, if the wafer transport time is too long, it will affect the secondary process of the reaction chamber, and therefore the production capacity of the processing platform will be reduced. Therefore, how to improve the wafer transport efficiency and improve the production capacity of the processing platform is an important issue to be solved. Summary of the Invention [Means for solving the problem]

[0003] The present disclosure provides a process platform comprising a transfer chamber, a containment chamber, and a number of reaction chambers.

[0004] A first transfer section is installed inside the transfer chamber, and a plurality of gripping mechanisms are installed in the first transfer section.

[0005] The accommodation chamber communicates with the transfer chamber and is used for loading wafers.

[0006] The reaction chambers are all connected to the transfer chamber, and each reaction chamber is equipped with at least one wafer stage. The top surface of the wafer stage is equipped with an ejector pin that can be raised and lowered to support the wafer. The gripping mechanisms are for transporting the wafer between the reaction chambers and the accommodation chamber.

[0007] According to the solution disclosed herein, by installing multiple reaction chambers, process reactions can be performed on multiple wafers in the process platform, and by installing multiple gripping mechanisms, the efficiency of transporting wafers between the reaction chambers and the containing chamber can be improved, thereby enabling process reactions to be performed continuously in the process platform, thereby improving the process production capacity of the process platform.

[0008] It should be understood that the contents described herein are not intended to describe key points or important features of the embodiments of the present disclosure, nor are they used to limit the scope of the present invention. Other features of the present invention can be understood through the following specification.

[0009] The foregoing and other features, advantages, and aspects of the embodiments of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which like or similar reference numerals indicate like or similar elements, and in which: [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic diagram illustrating a configuration of a process platform according to an embodiment of the present disclosure. [Diagram 2] FIG. 1 is a schematic diagram illustrating a configuration of a process platform according to an embodiment of the present disclosure. [Diagram 3] FIG. 2 is a schematic diagram showing a configuration of a reaction chamber according to an embodiment of the present disclosure. [Figure 4] 1 is a schematic diagram illustrating a configuration of a mechanical hand according to an embodiment of the present disclosure. [Diagram 5] 1 is a schematic diagram illustrating a configuration of a mechanical hand according to an embodiment of the present disclosure. [Figure 6] 1 is a schematic diagram illustrating a configuration of a mechanical hand according to an embodiment of the present disclosure. [Figure 7] 1 is a schematic diagram illustrating a configuration of a mechanical hand according to an embodiment of the present disclosure. [Figure 8]FIG. 1 is a schematic diagram illustrating a configuration of a process platform according to an embodiment of the present disclosure. [Figure 9] FIG. 1 is a schematic diagram illustrating a configuration of an application scenario of a process platform according to an embodiment of the present disclosure. [Figure 10] FIG. 1 is a schematic diagram illustrating a configuration of an application scenario of a process platform according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings, and various details of the embodiments of the present disclosure will be included in the description to facilitate understanding, but these should be considered as merely illustrative. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, in the following description, descriptions of well-known functions and structures are omitted for clarity and conciseness.

[0012] In an embodiment of the present disclosure, as shown in FIG. 1, a process platform is provided that includes a transfer chamber 1, a housing chamber 2, and a number of reaction chambers 3.

[0013] A first transfer section 11 is provided inside the transfer chamber 1, and a plurality of gripping mechanisms 1111 are provided in the first transfer section 11.

[0014] The accommodation chamber 2 communicates with the transfer chamber 1 and is used for loading wafers.

[0015] Each of the reaction chambers 3 communicates with the transfer chamber 1, and at least one wafer stage 31 is installed in each reaction chamber 3. Ejector pins 311 that can be raised and lowered are installed on the top surface of the wafer stage 31 to support the wafer. The gripping mechanisms 1111 are used to transfer the wafer between the reaction chambers 3 and the accommodation chamber 2.

[0016] In the embodiment of the present disclosure, the following should be explained.

[0017] The transfer port between the accommodation chamber 2 and the transfer chamber 1 may be provided as a transfer port that cannot be closed, or may be provided as a transfer port that can be opened and closed. When the gripping mechanism 1111 transfers the wafer between the transfer chamber 1 and the accommodation chamber 2, the transfer port is opened to connect the accommodation chamber 2 and the transfer chamber 1, which is useful for the transfer of the wafer, and when the gripping mechanism 1111 completes the transfer of the wafer between the transfer chamber 1 and the accommodation chamber 2, the transfer port is closed.

[0018] The transfer port between the reaction chamber 3 and the transfer chamber 1 may be provided as a transfer port that cannot be closed, or may be provided as a transfer port that can be opened and closed. When the gripping mechanism 1111 transfers the wafer between the transfer chamber 1 and the reaction chamber 3, the transfer port is opened to communicate the reaction chamber 3 and the transfer chamber 1, which is useful for the transfer of the wafer, and when the gripping mechanism 1111 completes the transfer of the wafer between the transfer chamber 1 and the reaction chamber 3, the transfer port is closed.

[0019] The elevation state of the ejector pins 311 can be selected and adjusted as necessary. For example, when a wafer is loaded into the reaction chamber, the ejector pins 311 protrude from the top surface of the wafer stage 31 to a high position to support the wafer, whereas when the wafer is removed from the reaction chamber 3, the ejector pins 311 descend from the high position to a low position to separate from the wafer.

[0020] The multiple reaction chambers 3 may be used for the same process reaction (i.e., may be the same type of reaction chambers 3) or may be used for different process reactions (i.e., may be different types of reaction chambers 3), for example, after process A is completed in the first reaction chamber 3, the gripping mechanism 1111 transfers the wafer to the second reaction chamber 3 to perform process B.

[0021] The shape and dimensions of the transfer chamber 1 can be selected and adjusted as necessary, and are not particularly limited here. For example, the transfer chamber 1 may be a cavity having a rectangular or polygonal structure.

[0022] The shape and dimensions of the storage chamber 2 can be selected and adjusted as necessary, and are not particularly limited here.

[0023] The number and installation positions of the accommodation chambers 2 can be selected and adjusted as necessary. For example, there are multiple accommodation chambers 2, and they are installed on each side of the transfer chamber 1 so that the gripping mechanism 1111 can easily transfer the wafer.

[0024] The number and installation positions of the reaction chambers 3 can be selected and adjusted as required. For example, multiple reaction chambers 3 are installed on each side of the transfer chamber 1, respectively, or multiple reaction chambers 3 are installed on some sides of the transfer chamber 1 and one reaction chamber 3 is installed on another side of the transfer chamber 1 according to the process requirements.

[0025] The installation position of the accommodation chamber 2 relative to the multiple reaction chambers 3 can be selected and adjusted as necessary. For example, the accommodation chamber 2 is installed on one side of the transfer chamber 1, and the multiple reaction chambers 3 are installed on the other side of the transfer chamber 1, or the accommodation chamber 2 and some of the reaction chambers 3 are installed on one side of the transfer chamber 1, and the other reaction chambers 3 are installed on the other side of the transfer chamber 1.

[0026] The shape and size of the multiple reaction chambers 3 can be selected and adjusted as necessary, and are not particularly limited here.

[0027] The configuration and number of the multiple gripping mechanisms 1111 can be selected and adjusted as needed, and are not particularly limited here. For example, the multiple gripping mechanisms 1111 may be an even number or a single number.

[0028] The plurality of gripping mechanisms 1111 may transport wafers independently of each other, or may be installed such that the transport of wafers by the gripping mechanisms 1111 is correlated with each other.

[0029] The shape and dimensions of the wafer stage 31 can be selected and adjusted as necessary, and are not particularly limited here.

[0030] The shape and size of the top surface of the wafer stage 31 can be adjusted according to the shape and size of the wafer. For example, when a process reaction needs to be performed on a 12-inch wafer, a top surface of the wafer stage 31 that is 12 inches or larger can be selected.

[0031] The shape and number of the ejector pins 311 can be selected and adjusted as necessary, and are not particularly limited here as long as the ejector pins 311 can stably support the wafer.

[0032] The elevation positions of the ejector pins 311 of different wafer stages 31 in the same reaction chamber 3 may be the same or different. For example, the ejector pins 311 of the first wafer stage 31 may be located at height 1, and the ejector pins 311 of the second wafer stage 31 may be located at height 2. Here, the elevation heights of the ejector pins 311 of the same wafer stage 31 are kept consistent.

[0033] According to the embodiment of the present disclosure, by installing multiple reaction chambers 3, process reactions can be performed on multiple wafers in the process platform, and by installing multiple gripping mechanisms 1111, the efficiency of transporting wafers between the reaction chambers 3 and the accommodation chamber 2 can be improved, thereby continuously performing process reactions in the process platform and improving the process production capacity of the process platform. The ejector pin is installed on the top surface of the wafer stage 31 so as to be movable up and down, thereby realizing cooperation with the gripping mechanisms 1111 at different position heights, which helps the gripping mechanisms 1111 to smoothly place the wafer on the wafer stage 31 and take the wafer out of the wafer stage 31.

[0034] In one example, the multiple reaction chambers 3 include at least one of the following types of reaction chambers: a reaction chamber for removing photoresist from a wafer, a reaction chamber for thermally treating a wafer, a reaction chamber for oxidizing a wafer, and a reaction chamber for etching a wafer.

[0035] In one example, the process platform is applied to a photoresist removal process of a wafer, and uses plasma technology to remove the photoresist that does not need to be reserved from the top surface of the wafer. A 12-inch wafer is placed in the reaction chamber 3, and gases such as oxygen and nitrogen are introduced, and external high-frequency energy is applied to generate inductively coupled plasma, which causes an oxidation reaction with the photoresist on the surface of the wafer to generate volatile components such as carbon monoxide, carbon dioxide, and water, thereby removing the photoresist. In the exemplary process platform of the present disclosure, multiple photoresist removal type reaction chambers 3 are installed, and at least one wafer stage 31 is installed in each reaction chamber 3, so that the number of wafers that undergo photoresist removal in the process platform can be increased, and multiple mechanical hands can be installed to increase the transport efficiency of the wafer, thereby maximizing the uninterrupted process in the process platform, thereby increasing the production capacity of the wafer process.

[0036] In one example, two wafer stages 31 are installed at an interval in each reaction chamber 3. Four gripping mechanisms 1111 are installed in the first transfer unit 11 to transport wafers between the reaction chamber 3 and the accommodation chamber 2. Specifically, the four gripping mechanisms 1111 take out four wafers from the accommodation chamber 2, and carry the four wafers into two reaction chambers 3, respectively, to carry out a process reaction. The four gripping mechanisms 1111 operate repeatedly, so that the process reaction of the wafers is carried out in all reaction chambers 3. Thereafter, two of the four gripping mechanisms 1111 still take out two unprocessed wafers from the accommodation chamber 2, and when the process reaction is completed in one of the reaction chambers 3, the two gripping mechanisms 1111 in the idle state take out the wafers whose processes have been completed from the reaction chamber 3, and the two gripping mechanisms 1111 holding the unprocessed wafers carry the two wafers into the reaction chamber 3 to continue the process reaction. This allows the process to continue uninterrupted, and increases the productivity of the wafer process.

[0037] In one example, as shown in Figures 9 and 10, the reaction chamber 3 adopts a modularized equipment to facilitate assembly with the transfer chamber 1. The modularized equipment includes a frame 32 in which the reaction chamber 3, the plasma source 33, the plasma matching box 34, the electrical module 35, the main control module 36, and the air supply system 37 are installed. Here, the main control module 36 controls the air supply system 37 to supply process gas (oxygen, nitrogen, etc.) to the plasma source 33, the plasma matching box 34 emits high frequency energy to the process gas to ionize the process gas into plasma, and the plasma undergoes process reaction with the wafer after entering the reaction chamber 3, and the electrical module 35 is used to send control signals to the reaction chamber 3, the plasma source 33, the plasma matching box 34, the main control module 36, and the air supply system 37.

[0038] In one embodiment, as shown in FIG. 3 , the process platform further includes a heating section 312 installed on the top surface of the wafer stage 31, and the heating section 312 is used to heat an area of ​​the top surface of the wafer stage 31.

[0039] In the embodiment of the present disclosure, the following should be explained.

[0040] The arrangement method and the number of the heating parts 312 can be selected and adjusted according to the process requirements of the wafer, and are not particularly limited here. For example, when the number of the heating parts 312 is multiple, when the wafer needs to be heated uniformly, the multiple heating parts 312 can be arranged uniformly on the top surface, or when the central region of the wafer needs to be heated higher than the edge region of the wafer, more heating parts 312 can be arranged in the central region of the top surface and fewer heating parts 312 can be arranged in the edge region of the top surface, or the heating part 312 can be the whole heating disk arranged on the top surface, and different temperatures can be set in each region of the heating disk.

[0041] According to an embodiment of the present disclosure, by providing the heating section 312, the temperature of the top surface region of the wafer stage 31 can be increased, and the temperature of the wafer can be further increased, thereby improving the efficiency of the wafer process reaction, and impurities generated during the wafer process reaction can be volatilized at high temperatures, thereby avoiding the influence of the impurities on the wafer process reaction and improving the stability of the wafer process reaction.

[0042] In one embodiment, as shown in FIG. 3, the process platform further includes a gas transport unit installed on the top surface of the wafer stage 31, the gas transport unit having a plurality of annular gas conduits 313 and a plurality of first strip-shaped gas conduits 314. The plurality of annular gas conduits 313 and the plurality of first strip-shaped gas conduits 314 communicate with each other, and a first exhaust hole 315 is provided at the communication point. The plurality of annular gas conduits 313 are concentrically arranged and are coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas conduits 314 are all arranged at equal intervals along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31 and is used to exhaust the process gas.

[0043] Here, the heating section 312 is disposed between two adjacent annular gas conduits 313 .

[0044] In one embodiment, the process platform further includes a gas transport unit installed on the top surface of the wafer stage 31, the gas transport unit having a plurality of annular gas conduits 313 and a plurality of first strip-shaped gas conduits 314. The plurality of annular gas conduits 313 and the plurality of first strip-shaped gas conduits 314 communicate with each other, and a first exhaust hole 315 is provided at the communication point. The plurality of annular gas conduits 313 are concentrically arranged and are coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas conduits 314 are all arranged at equal intervals along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31 and is used to exhaust the process gas.

[0045] Here, the heating section 312 is disposed between two adjacent first strip-shaped gas conduits 314 .

[0046] In one embodiment, the process platform further includes a gas transport unit installed on the top surface of the wafer stage 31, the gas transport unit having a plurality of annular gas conduits 313 and a plurality of first strip-shaped gas conduits 314. The plurality of annular gas conduits 313 and the plurality of first strip-shaped gas conduits 314 communicate with each other, and a first exhaust hole 315 is provided at the communication point. The plurality of annular gas conduits 313 are concentrically arranged and are coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas conduits 314 are all arranged at equal intervals along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31 and is used to exhaust the process gas.

[0047] Here, the heating section 312 is installed between two adjacent annular gas conduits 313 and two adjacent first strip-shaped gas conduits 314 .

[0048] In the embodiment of the present disclosure, the following should be explained.

[0049] The intervals between two adjacent annular gas conduits 313 may be the same or different, that is, the multiple annular gas conduits 313 may be arranged at equal intervals on the top surface, or may be arranged at unequal intervals on the top surface, and are not particularly limited here.

[0050] The shape and dimensions of the first exhaust hole 315 can be selected and adjusted as necessary, and are not particularly limited here.

[0051] When carrying out a process reaction, the backside of the wafer needs to be heated and the wafer temperature needs to be further increased, but different regions of the wafer need to be heated to different temperatures in view of different process requirements. For example, the central region of the wafer is heated to 300° C., the edge region of the wafer is heated to 200° C., and the temperature of the intermediate region between the edge region and the central region exhibits a curved increasing trend, so as to avoid the influence of the gradient temperature difference on the process result. The embodiment of the present disclosure can effectively solve the above-mentioned problem.

[0052] According to the embodiment of the present disclosure, the heating section 312 is provided between the annular gas conduit 313 and the first strip-shaped gas conduit 314, so that the process gas absorbs heat and then discharges to the backside of the wafer, thereby reducing the temperature gradient between the two adjacent heating sections 312. This allows the wafer to be heated uniformly, and improves the stability of the wafer process results.

[0053] In one example, the process gas in the gas delivery section may be nitrogen gas.

[0054] 3, the gas transport section further includes a plurality of second strip-shaped gas conduits 316, which are mutually connected to some of the plurality of annular gas conduits 313 and have second exhaust holes 317 at the connecting points. The plurality of second strip-shaped gas conduits 316 are all installed at equal intervals along the diameter direction of the top surface of the wafer stage 31 and are alternately arranged with the plurality of first strip-shaped gas conduits 314. The second exhaust holes 317 are connected to the top surface of the wafer stage 31 and are used to exhaust the process gas.

[0055] Here, the heating section 312 is disposed between two adjacent second strip-shaped gas conduits 316 .

[0056] In the embodiment of the present disclosure, the following should be explained.

[0057] The length of the second strip-shaped trachea 316 can be selected and adjusted as needed, for example, the length of the second strip-shaped trachea 316 is the same as the length of the first strip-shaped trachea 314, or is shorter than the length of the first strip-shaped trachea 314.

[0058] The installation position of the second strip-shaped air duct 316 can be selected and adjusted according to process requirements. For example, if it is required to increase the temperature gradient in the central region of the wafer, the second strip-shaped air duct 316 is installed at a position closer to the central region of the top surface of the wafer stage 31, thereby increasing the exhaust amount in the central region of the top surface of the wafer stage 31 and thus reducing the temperature difference in the central region of the wafer.

[0059] The shape and dimensions of the second exhaust hole 317 can be selected and adjusted as necessary, and are not particularly limited here.

[0060] According to the embodiment of the present disclosure, a heating section 312 is provided between two adjacent second strip-shaped gas conduits 316, so that the process gas absorbs heat and then is discharged to the back surface of the wafer, thereby reducing the temperature gradient between the two adjacent heating sections 312. This allows the wafer to be heated uniformly, and further improves the stability of the wafer process results.

[0061] In one embodiment, as shown in Figure 1, the process platform further includes a cooling chamber 4 for cooling the wafer after the process reaction. The cooling chamber 4 is installed on the transfer stage.

[0062] In the embodiment of the present disclosure, the following should be explained.

[0063] The installation position of the cooling chamber 4 can be selected and adjusted according to process requirements. For example, if the wafers to be loaded into the accommodation chamber 2 need to be low-temperature wafers, the cooling chamber 4 is installed between the reaction chamber 3 and the accommodation chamber 2. Also, for example, if two adjacent reaction chambers 3 are different types of reaction chambers 3, and it is necessary to transport the wafers between the reaction chambers, but the temperature requirements are different, the cooling chamber 4 is installed between the two adjacent reaction chambers 3.

[0064] The number of cooling tanks 4 can be selected and adjusted as needed, and is not particularly limited here.

[0065] According to the embodiment of the present disclosure, by installing the cooling chamber 4 on the transfer stage, it is possible to temporarily accommodate wafers for which processing has been completed. This makes it possible to avoid delays in the progress of the next process due to the wafers being cooled in the reaction chamber 3, and further improve the production capacity of the reaction chamber 3.

[0066] In one example, the cooling chamber 4 may be located in the front end module 5, as shown in Figs.

[0067] 2 and 8, when the insides of the reaction chambers 3 and the transfer chamber 1 are both vacuum environments, the process platform further includes a front end module 5 and a first relay chamber 6. The first relay chamber 6 is installed in the transfer chamber 1, and the front end module 5 is installed between the first relay chamber 6 and the accommodation chamber 2, and is used to transfer wafers between the accommodation chamber 2 and the first relay chamber 6.

[0068] In the embodiment of the present disclosure, the following should be explained.

[0069] The front end module 5 can be understood as equipment for transporting the wafer from the non-vacuum accommodation chamber 2 to the vacuum first relay chamber 6, and the specific structure thereof is not particularly limited here.

[0070] The number of first relay chambers 6 can be selected and adjusted as necessary, and is not particularly limited here.

[0071] According to an embodiment of the present disclosure, by installing the advanced module 5, the vacuum environment inside the reaction chamber 3 and the transfer chamber 1 can be avoided from being affected during the wafer transfer process, and the loss of process gas and plasma inside the reaction chamber 3 can be reduced, the adjustment time for the internal environment during the secondary process reaction in the reaction chamber 3 can be shortened, and the production capacity of the process platform can be further improved.

[0072] 8, the process platform further includes a second transfer unit 7 and a second relay chamber 8, both of which are installed in the transfer chamber 1. The second transfer unit 7 is installed between the first transfer unit 11 and the accommodation chamber 2, and the second relay chamber 8 is installed between the first transfer unit 11 and the second transfer unit 7, and is used to temporarily accommodate the wafers transferred from the second transfer unit 7 to the first transfer unit 11.

[0073] In the embodiment of the present disclosure, the following should be explained.

[0074] The mechanism and the number of the gripping mechanisms 1111 installed in the second transport unit 7 can be selected and adjusted as necessary. For example, the second transport unit 7 has the same structure and number as the gripping mechanisms 1111 of the first transport unit 11, and based on this, the gripping mechanisms 1111 of the second transport unit 7 can transport wafers not only to the second relay chamber 8 but also to a part of the reaction chamber 3, thereby further improving the efficiency of wafer transport.

[0075] The number of second relay chambers 8 can be selected and adjusted as necessary, and is not particularly limited here.

[0076] According to the embodiment of the present disclosure, by providing the second transfer unit 7 and the second relay chamber 8, the efficiency of transferring the wafer between the accommodation chamber 2 and the reaction chamber 3 can be improved.

[0077] 4, the process platform further includes a first mechanical arm 1112. A first end of the first mechanical arm 1112 is coupled to the transport chamber 1, and a second end of the first mechanical arm 1112 is rotatably coupled to a plurality of gripping mechanisms 1111. All of the plurality of gripping mechanisms 1111 are installed at a first height.

[0078] Here, the elevation height of the tip of the ejector pin 311 is adapted to the installation height of the multiple gripping mechanisms 1111 .

[0079] In the embodiment of the present disclosure, the following should be explained.

[0080] The first mechanical arm 1112 and the gripping mechanism 1111 together form a mechanical hand structure.

[0081] It should be understood that the lift height of the tip of the ejector pin 311 is adapted to the installation height of the multiple gripping mechanisms 1111, and is adjusted to a first height so that the top of the ejector pin 311 abuts the wafer when the gripping mechanism 1111 transports the wafer into the reaction chamber 3.

[0082] Specifically, regarding the operating process of the multiple gripping mechanisms 1111, after some of the gripping mechanisms 1111 remove a wafer from within the reaction chamber 3, the angle of the gripping mechanisms 1111 is rotated so that other gripping mechanisms 1111 holding wafers on which no process reaction has been performed are aligned with the reaction chamber 3 and transport the wafers on which no process reaction has been performed into the reaction chamber 3.

[0083] According to an embodiment of the present disclosure, by providing multiple rotatable gripping mechanisms 1111, it is possible to realize rapid replacement between wafers on which process reactions have been completed and wafers on which process reactions have not been completed, thereby reducing the time taken up by wafer replacement during process reactions and improving process efficiency.

[0084] In one example, when the insides of the multiple reaction chambers 3 and the transfer chamber 1 are all in a vacuum environment, the gripping end of the gripping mechanism 1111 may employ a suction cup for adsorbing the edge of the wafer.

[0085] According to an example of the present disclosure, by providing a suction cup, the lateral friction force between the gripping mechanism 1111 and the wafer can be increased to prevent the wafer from falling off the gripping mechanism 1111 during transportation.

[0086] 5, the process platform further includes a second mechanical arm 1113, a first end of which is coupled to the transport chamber 1 and a second end of which is rotatably coupled to a plurality of gripping mechanisms 1111. At least some of the gripping mechanisms 1111 are installed at different heights.

[0087] Here, the elevation height of the tip of the ejector pin 311 is adapted to the installation height of the multiple gripping mechanisms 1111 .

[0088] In the embodiment of the present disclosure, the following should be explained.

[0089] The second mechanical arm 1113 and the gripping mechanism 1111 together form a mechanical hand structure.

[0090] The installation heights of the multiple gripping mechanisms 1111 can be selected and adjusted as necessary. For example, the multiple gripping mechanisms 1111 may be installed at different heights, or some of the gripping mechanisms 1111 may be installed at the same height, and other gripping mechanisms 1111 may be installed at different heights.

[0091] It should be understood that the elevation height of the tip of the ejector pin 311 is adapted to the installation height of the multiple gripping mechanisms 1111 means that when a higher gripping mechanism 1111 transports a wafer to the first wafer stage 31 of the reaction chamber 3 or removes a wafer from the first wafer stage 31 of the reaction chamber 3, the ejector pin 31 of the first wafer stage 31 is adjusted to the higher position of the gripping mechanism 1111. When a lower gripping mechanism 1111 transports a wafer to the first wafer stage 31 or removes a wafer from the first wafer stage 31, the ejector pin 311 is adjusted from the higher position to the lower position. In other words, the height of the ejector pin 31 of any of the wafer stages 31 is adjusted according to the height of the gripping mechanism 1111 transporting a wafer to the wafer stage 31.

[0092] According to an embodiment of the present disclosure, by providing gripping mechanisms 1111 having different heights, the space occupied by the gripping mechanisms 1111 during rotation can be reduced, and by adapting the raising and lowering of the ejector pins 311 to the height of the gripping mechanisms 1111, it is possible to avoid a long time required for raising and lowering the gripping mechanisms 1111, which would affect the wafer replacement efficiency.

[0093] In one example, the second mechanical arm 1113 is provided with four gripping mechanisms 1111, and the four gripping mechanisms 1111 are located at different heights. Two wafer stages 31 are installed in the reaction chamber 3. In the operation process, specifically, the four gripping mechanisms 1111 rotate to the same direction, and four wafers can be simultaneously taken out when taking out the wafers from the first relay chamber 6 (or the receiving chamber 2), and then the four gripping mechanisms 1111 rotate to different angles, and when the first gripping mechanism 1111 carries the wafer into the first wafer stage 31 of the first reaction chamber 3, and the second gripping mechanism 1111 carries the wafer into the second wafer stage 31 of the first reaction chamber 3, the ejector pins 311 of the first wafer stage 31 may be adjusted to height 1, and the ejector pins 311 of the second wafer stage 31 may be adjusted to height 2. After the process reaction is completed, when the second gripping mechanism 1111 takes the wafer from the first wafer stage 31, the ejector pins 311 of the first wafer stage 31 are adjusted to height 2 and the ejector pins 311 of the second wafer stage 31 are adjusted to height 1. After the process reaction is completed, when the third gripping mechanism 1111 takes the wafer from the first wafer stage 31, and the fourth gripping mechanism 1111 takes the wafer from the second wafer stage 31, the ejector pins 311 of the first wafer stage 31 are adjusted to height 3 and the ejector pins 311 of the second wafer stage 31 are adjusted to height 4. After the process reaction is completed, when the fourth gripping mechanism 1111 removes the wafer from the first wafer stage 31 and the third gripping mechanism 1111 removes the wafer from the second wafer stage 31, the ejector pins 311 of the first wafer stage 31 are adjusted to height 4 and the ejector pins 311 of the second wafer stage 31 are adjusted to height 3.

[0094] 6 and 7, the process platform further includes a third mechanical arm 1114 and a fourth mechanical arm 1115. The third mechanical arm 1114 has a first end connected to the transport chamber 1 and a second end connected to a part of the gripping mechanisms 1111 among the plurality of gripping mechanisms 1111. The fourth mechanical arm 1115 has a first end connected to the transport chamber 1 and a second end connected to another part of the gripping mechanisms 1111 among the plurality of gripping mechanisms 1111. Some of the gripping mechanisms 1111 are installed at a first height, and the other part of the gripping mechanisms 1111 are installed at a second height.

[0095] Here, the elevation height of the tip of the ejector pin 311 is adapted to the installation height of some of the gripping mechanisms 1111 and other parts of the gripping mechanisms 1111 .

[0096] In the embodiment of the present disclosure, the following should be explained.

[0097] The third mechanical arm 1114 and the gripping mechanism 1111 together form a mechanical hand structure.

[0098] The fourth mechanical arm 1115 and the gripping mechanism 1111 together form a mechanical hand structure.

[0099] The lifting height of the tip of the ejector pin 311 conforms to the installation height of the multiple gripping mechanisms 1111, which should be understood as meaning that when a gripping mechanism 1111 located at a first height transfers a wafer to or removes a wafer from a wafer stage 31 of a reaction chamber 3, the ejector pin 31 of the wafer stage 31 is adjusted to the first height of the gripping mechanism 1111. When a gripping mechanism 1111 located at a second height transfers a wafer to or removes a wafer from the wafer stage 31, the ejector pin 311 is adjusted from the first height to a second height. That is, the height of the ejector pin 31 of the wafer stage 31 can be adjusted according to the height of the gripping mechanism 1111 that transfers a wafer to the wafer stage 31.

[0100] According to an embodiment of the present disclosure, by adapting the lifting and lowering of the ejector pins 311 to the height of the gripping mechanism 1111, it is possible to avoid the long time it takes to lift and lower the gripping mechanism 1111 from affecting the wafer replacement efficiency.

[0101] In one example, two gripping mechanisms 1111 are installed on the third mechanical arm 1114, and the two gripping mechanisms 1111 are respectively a first gripping mechanism 1111 and a second gripping mechanism 1111, and two gripping mechanisms 1111 are installed on the fourth mechanical arm 1115, and the two gripping mechanisms 1111 are respectively a third gripping mechanism 1111 and a fourth gripping mechanism 1111. Here, the first gripping mechanism 1111 and the second gripping mechanism 1111 are located at height 1 (first height), and the third gripping mechanism 1111 and the fourth gripping mechanism 1111 are located at height 2 (second height). Two wafer stages 31 are installed in the reaction chamber 3. In the operation process, specifically, when the first gripping mechanism 1111 and the second gripping mechanism 1111 carry the wafers into the two stages 31, the ejector pins 311 of the two stages 31 are adjusted to height 1. After the process reaction is completed, the third gripping mechanism 1111 and the fourth gripping mechanism 1111 take the wafers out of the two wafer stages 31, and then the ejector pins 311 of the two wafer stages 31 are adjusted to height 2. After the third gripping mechanism 1111 and the fourth gripping mechanism 1111 take the wafers out, the first gripping mechanism 1111 and the second gripping mechanism 1111 carry the wafers that are not undergoing process reaction, which are held from the accommodation chamber 2, into the two wafer stages 31, and the ejector pins of the two wafer stages 31 are adjusted to height 1 again. This allows the process to be uninterrupted and the production capacity of the process to be increased.

[0102] In the description herein, the orientations or positional relationships indicated by terms such as "center," "longitudinal," "lateral," "length," "width," "thickness," "up," "down," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like, are based on the orientations or positional relationships shown in the drawings and are intended only to facilitate and simplify the description of the present disclosure, and are not intended to indicate or imply that the devices or parts referred to must be configured and operated in a particular orientation or in a particular orientation, and are not to be construed as limiting the present disclosure.

[0103] Additionally, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or as implicitly designating the number of technical features depicted. Thus, a feature qualified with "first" or "second" expressly or implying that it may include one or more such features. In the description of this disclosure, unless otherwise clearly and specifically limited, "plurality" means, for example, two or more than two.

[0104] In this disclosure, unless otherwise specified and limited, the meaning of the terms "attached", "connected", "coupled" and "fixed" should be broadly understood. For example, fixed connection, detachable connection, or integration are possible. Mechanical connection, electrical connection, and communication are also possible. Direct connection, indirect connection via an intermediate medium, internal communication between two parts, and interaction between two elements are also possible. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to specific cases.

[0105] In this disclosure, unless otherwise clearly specified and limited, a first configuration being "above" or "below" a second configuration may mean that the first configuration and the second configuration are in direct contact with each other, or that the first configuration and the second configuration are not in direct contact with each other but are in contact with each other through another intermediate configuration. In addition, a first configuration being "above," "above," and "on the top surface" of a second configuration may mean that the first configuration is directly above or diagonally above the second configuration, or only means that the horizontal height of the first configuration is higher than that of the second configuration. A first configuration being "below," "below," and "on the bottom surface" of a second configuration may mean that the first configuration is directly below or diagonally below the second configuration, or only means that the horizontal height of the first configuration is smaller than that of the second configuration.

[0106] The above disclosure has provided many different embodiments or examples for realizing different configurations of the present disclosure. In order to simplify the disclosure of the present disclosure, specific example components and installations have been described above. Of course, these are merely examples and are not intended to limit the present application. Furthermore, the present disclosure may repeatedly refer to numbers and / or alphabets in different examples, and such repetition is for the purpose of simplicity and clarity, and does not itself indicate a relationship between the various embodiments and / or installations discussed.

[0107] The above specific embodiments do not limit the scope of protection of the present application. It is obvious to those skilled in the art that various modifications, combinations, sub-combinations, and substitutions can be made based on design requirements and other factors. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. a transfer chamber in which a first transfer unit having a plurality of gripping mechanisms is installed; a receiving chamber communicating with the transfer chamber for loading wafers; a plurality of reaction chambers, each of which is in communication with the transfer chamber and in which at least one wafer stage is installed; a liftable ejector pin for supporting a wafer is provided on a top surface of the wafer stage, and the plurality of gripping mechanisms are used to transport the wafer between the plurality of reaction chambers and the accommodation chamber; Process platform.

2. The process platform comprises: Further comprising a heating unit disposed on the top surface of the wafer stage for heating a region of the top surface of the wafer stage. The process platform of claim 1 .

3. The process platform comprises: a gas transport section disposed on a top surface of the wafer stage and having a plurality of annular gas conduits and a plurality of first strip-shaped gas conduits; The plurality of annular gas conduits and the plurality of first strip-shaped gas conduits are in communication with each other, and a first exhaust hole is provided at a communication point; the plurality of annular gas conduits are concentrically disposed and coaxial with a top surface of the wafer stage; the first plurality of strip-shaped gas conduits are all equally spaced apart along a diameter of the top surface of the wafer stage; the first exhaust hole communicates with the top surface of the wafer stage and is used to exhaust process gas; The heating section is disposed between two adjacent annular gas conduits, and / or the heating section is disposed between two adjacent first strip-shaped gas conduits. The process platform of claim 2 .

4. the gas transport section further includes a plurality of second strip-shaped gas conduits that are mutually in communication with some of the plurality of annular gas conduits and have second exhaust holes at communication points; the second strip-shaped gas conduits are equally spaced apart along a diameter of the top surface of the wafer stage and alternate with the first strip-shaped gas conduits; the second exhaust hole communicates with the top surface of the wafer stage and is used to exhaust process gas; The heating section is disposed between two adjacent second strip-shaped gas conduits. The process platform of claim 3 .

5. The process platform comprises: The wafer is further provided with a cooling chamber installed on the transfer stage for cooling the wafer after the process reaction. The process platform of claim 1 .

6. When the insides of the reaction chambers and the transfer chamber are all in a vacuum environment, the process platform further includes a front end module and a first relay chamber; The first relay chamber is installed in the transfer chamber, the front end module is installed between the first relay chamber and the accommodation chamber, and is used to transport wafers between the accommodation chamber and the first relay chamber; The process platform of claim 1 .

7. The process platform comprises: Further comprising a second transport unit and a second relay chamber, both of which are installed in the transport chamber; The second transport unit is disposed between the first transport unit and the storage chamber, The second relay chamber is installed between the first transfer unit and the second transfer unit and is used to temporarily accommodate a wafer being transferred from the second transfer unit to the first transfer unit. The process platform of claim 1 .

8. The process platform comprises: Further comprising a first mechanical arm; the first mechanical arm has a first end coupled to the transfer chamber and a second end rotatably coupled to the plurality of gripping mechanisms; The plurality of gripping mechanisms are all installed at a first height, The lift height of the tip of the ejector pin is adapted to the installation height of the plurality of gripping mechanisms. The process platform according to any one of claims 1 to 7.

9. The process platform comprises: Further comprising a second mechanical arm; the second mechanical arm has a first end coupled to the transfer chamber and a second end rotatably coupled to the plurality of gripping mechanisms; At least some of the gripping mechanisms among the plurality of gripping mechanisms are installed at different heights, The lift height of the tip of the ejector pin is adapted to the installation height of the plurality of gripping mechanisms. The process platform according to any one of claims 1 to 7.

10. The process platform comprises: Further comprising a third mechanical arm and a fourth mechanical arm, the third mechanical arm has a first end coupled to the transfer chamber and a second end coupled to a part of the plurality of gripping mechanisms; the fourth mechanical arm has a first end coupled to the transfer chamber and a second end coupled to another gripping mechanism of the plurality of gripping mechanisms; The part of the gripping mechanisms is installed at a first height, and the other part of the gripping mechanisms is installed at a second height, the lifting height of the tip of the ejector pin is adapted to the installation height of the one gripping mechanism and the other one gripping mechanism; The process platform according to any one of claims 1 to 7.

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