Semiconductor device manufacturing method, semiconductor device, and power conversion device

Abstract

To provide a technique capable of suppressing bonding defects during wire bonding.SOLUTION: A manufacturing method of a semiconductor device 202 includes the steps of (a) preparing a circuit board 1 having an insulating layer 3 and a circuit pattern 4 formed on the upper surface of the insulating layer 3, with a semiconductor element 5 mounted on the upper surface of the circuit pattern 4, (b) attaching an external terminal 20 in intimate contact with the upper surface of a terminal holding portion 30 protruding inward from a peripheral wall portion 8A of a frame-shaped resin case 8, (c) applying an adhesive 10 to the peripheral portion of the circuit board 1, (d) positioning the resin case 8 on the peripheral portion of the circuit board 1 with the adhesive 10 interposed therebetween, and (e) bonding the peripheral portions of the resin case 8 and the circuit board 1 together by hardening the adhesive 10.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a semiconductor device, and a power conversion device. [Background technology]

[0002] Semiconductor devices serving as power modules are increasingly being mounted in a wide variety of products, such as industrial equipment, home appliances, and information terminals, and high productivity is therefore required.

[0003] In conventional semiconductor devices, in order to adapt the arrangement of external terminals attached to the resin case to various specifications specified by the model and user, a large number of terminal mounting holes are formed in the peripheral wall of the resin case, and the necessary external terminals are later attached to the predetermined terminal mounting holes (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2017-152525 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the technology described in Patent Document 1, the side portion of the external terminal that is perpendicular to the wire bonding portion that is connected to the bonding wire is fixed to the resin case by fitting, but the wire bonding portion is not fixed to the resin case, so there is a problem that the external terminal vibrates during wire bonding, causing poor bonding.

[0006] Therefore, an object of the present disclosure is to provide a technique capable of suppressing bonding defects during wire bonding. [Means for solving the problem]

[0007] A method for manufacturing a semiconductor device according to the present disclosure includes the steps of: (a) preparing a circuit board having an insulating layer and a circuit pattern formed on an upper surface of the insulating layer, with a semiconductor element mounted on the upper surface of the circuit pattern; (b) attaching an external terminal in intimate contact with an upper surface of a terminal holding portion protruding from a peripheral wall portion of a frame-shaped resin case toward the inner periphery; (c) applying an adhesive to the peripheral portion of the circuit board; (d) positioning the resin case on the peripheral portion of the circuit board via the adhesive; and (e) bonding the resin case and the peripheral portion of the circuit board by hardening the adhesive. Effect of the Invention

[0008] According to the present disclosure, since the external terminals are attached in a state of being in close contact with the upper surface of the terminal holding portion, rattling of the external terminals is suppressed, and vibration during wire bonding can be reduced, thereby suppressing poor bonding during wire bonding. [Brief description of the drawings]

[0009] [Figure 1] 1 is a top view of a semiconductor device according to a first embodiment. [Diagram 2] 2 is a cross-sectional view of the periphery of a terminal holding portion included in the semiconductor device according to the first embodiment. [Diagram 3] 2 is a perspective view of a plate member included in the semiconductor device according to the first embodiment. FIG. [Figure 4] 2 is a perspective view of a press-fit terminal included in the semiconductor device according to the first embodiment. FIG. [Diagram 5] 2 is a perspective view of a terminal holding portion included in the semiconductor device according to the first embodiment. FIG. [Figure 6] 4 is a perspective view showing a method of attaching a plate member to a terminal holding portion in the first embodiment. FIG. [Figure 7] 4 is a perspective view showing a method of attaching a press-fit terminal to a terminal holding portion via a plate member in the first embodiment. FIG. [Figure 8] 11 is a perspective view of a press-fit terminal included in a semiconductor device according to a first modification of the first embodiment. FIG. [Figure 9] 11 is a perspective view of a press-fit terminal included in a semiconductor device according to a second modification of the first embodiment. FIG. [Figure 10] 4 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 11] 5A to 5C are cross-sectional views showing a process of preparing a circuit board in the first embodiment. [Figure 12] 4 is a cross-sectional view showing a process of attaching an external terminal in the first embodiment. FIG. [Figure 13] FIG. 4 is a cross-sectional view showing an adhesive application step in the first embodiment. [Figure 14] 4 is a cross-sectional view showing a bonding step of a resin case in the first embodiment. FIG. [Figure 15] 5A to 5C are cross-sectional views showing a wire bonding step in the first embodiment. [Figure 16] 13 is a perspective view of a press-fit terminal included in a semiconductor device according to a second embodiment. FIG. [Figure 17] 13 is a perspective view of a terminal holding portion included in a semiconductor device according to a third embodiment. FIG. [Figure 18] 13 is a cross-sectional view of the periphery of a terminal holding portion included in a semiconductor device according to a third embodiment. FIG. [Figure 19] FIG. 11 is a block diagram showing a configuration of a power conversion system to which a power conversion device according to a fourth embodiment is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] <Embodiment 1> The first embodiment will be described below with reference to the drawings. Fig. 1 is a top view of a semiconductor device 202 according to the first embodiment. Fig. 2 is a cross-sectional view of the periphery of a terminal holding portion 30 included in the semiconductor device 202 according to the first embodiment.

[0011] First, a description will be given of the configuration of the semiconductor device 202. As shown in Figures 1 and 2, the semiconductor device 202 includes a circuit board 1, a plurality of semiconductor elements 5, a resin case 8, a plurality of main electrodes 11, and a plurality of external terminals 20.

[0012] The circuit board 1 includes an insulating layer 3, a metal plate 2 provided on the lower surface of the insulating layer 3, and a circuit pattern 4 formed on the upper surface of the insulating layer 3. A semiconductor element 5 mounted on the upper surface of the circuit pattern 4 is wired with a metal wire 7 to form a circuit.

[0013] Here, the metal plate 2 is formed of a metal material including, for example, copper or aluminum. The insulating layer 3 is formed of a resin material having insulating properties. However, the insulating layer 3 is not limited to this, and may be formed of an inorganic material such as ceramic. The circuit pattern 4 is formed of a metal material including, for example, copper or aluminum, and is patterned into an arbitrary shape. Therefore, the circuit pattern 4 includes a plurality of patterns that are electrically insulated from each other. The metal wire 7 is formed of a material including, for example, gold, copper, or aluminum, and electrically connects the circuit pattern 4 and the semiconductor element 5.

[0014] The resin case 8 includes a peripheral wall portion 8A formed in a frame shape (specifically, a rectangular frame shape) so as to surround the periphery of the semiconductor element 5, and a terminal holding portion 30 provided on the peripheral wall portion 8A. The resin case 8 is bonded to the peripheral edge portion of the circuit board 1. A plurality of external terminals 20 are attached to the resin case 8, for example, for electrically connecting external wiring to the circuit board 1. The external wiring is not shown in the figure. A plurality of main electrodes 11 are also attached to the resin case 8.

[0015] Here, the resin case 8 is made of a resin material such as PPS (Polyphenylene Sulfide) or PBT (Polybutylene Terephthalate).

[0016] 2, no circuit pattern 4 is formed on the peripheral portion of the circuit board 1, and the insulating layer 3 is exposed. The resin case 8 is adhered with an adhesive 10 to the portion of the peripheral portion of the circuit board 1 where the insulating layer 3 is exposed.

[0017] Here, an adhesive having insulating properties and thermoplastic or thermosetting properties that harden when heated is used as the adhesive 10. Also, as the material for the adhesive 10, a material containing silicone, a resin material containing epoxy or acrylic, or a ceramic containing SiO2 or the like may be used.

[0018] Next, a description will be given of the external terminal 20. Fig. 3 is a perspective view of a plate member 21 included in the semiconductor device 202 according to the first embodiment. Fig. 4 is a perspective view of a press-fit terminal 23 included in the semiconductor device 202 according to the first embodiment.

[0019] 2 to 4, the external terminal 20 is composed of a plate member 21 having a circular through hole 22 formed therein, and a press-fit terminal 23. The press-fit terminal 23 has a shaft portion 23A, a press-fit portion 24A provided at one end of the shaft portion 23A, a constricted portion 25A formed at the base of the press-fit portion 24A, and a tip portion 26A provided on the side of the press-fit portion 24A opposite to the shaft portion 23A. The through hole 22 of the plate member 21 is narrower than the width of the press-fit portion 24A, and an L-shaped external terminal 20 is formed by inserting the press-fit portion 24A into the through hole 22 of the plate member 21.

[0020] Here, the plate member 21 and the press-fit terminals 23 constituting the external terminals 20 are made of a metal material containing, for example, copper or aluminum.

[0021] Next, the terminal holding portion 30 and the attachment of the external terminal 20 to the terminal holding portion 30 will be described. Fig. 5 is a perspective view of the terminal holding portion 30 included in the semiconductor device 202 according to the first embodiment. Fig. 6 is a perspective view showing a method of attaching the plate member 21 to the terminal holding portion 30 in the first embodiment. Fig. 7 is a perspective view showing a method of attaching the press-fit terminal 23 to the terminal holding portion 30 via the plate member 21 in the first embodiment.

[0022] As shown in FIG. 2 and FIG. 5, the terminal holding portion 30 is provided so as to protrude from the peripheral wall portion 8A of the resin case 8 toward the inner periphery, and is formed in a substantially trapezoidal shape with an upper base longer than a lower base in a cross-sectional view. The upper surface of the terminal holding portion 30 is formed in a rectangular shape, and a circular groove 31 is formed on the peripheral wall portion 8A side of the upper surface of the terminal holding portion 30. Specifically, the groove 31 is composed of a circular first groove 31A and a circular second groove 31B. The first groove 31A has the same size as the through hole 22 of the plate member 21 so as to correspond to the through hole 22. The second groove 31B is formed lower and with a smaller diameter than the first groove 31A, and is narrower than the width of the tip portion 26A of the press-fit terminal 23.

[0023] In addition, a guide groove 30A is formed on the side of the first groove 31A on the upper surface of the terminal holding portion 30 along the protruding direction of the terminal holding portion 30. The guide groove 30A guides one end of the plate member 21 in the short side direction, so that the plate member 21 can be attached to the terminal holding portion 30. As shown in FIG. 6, the plate member 21 is attached to the terminal holding portion 30 of the resin case 8 from the horizontal direction. With the plate member 21 attached to the terminal holding portion 30, the through hole 22 of the plate member 21 and the first groove 31A of the terminal holding portion 30 are aligned in the horizontal direction. Therefore, the through hole 22 of the plate member 21 and the groove 31 of the terminal holding portion 30 communicate with each other.

[0024] 7, the press-fit terminal 23 is press-fitted into the through-hole 22 of the plate member 21. At this time, the plate member 21 and the press-fit terminal 23 are fixed together by a reaction force of the press-fit portion 24A caused by the press-fitting, and at the same time, the tip portion 26A of the press-fit terminal 23 is crimped into the second groove 31B formed in the terminal holding portion 30, thereby fixing the external terminal 20 and the terminal holding portion 30 together.

[0025] Next, a modified example of the embodiment 1 will be described. In the embodiment 1, the press-fit terminal 23 is exemplified as a means for fixing the plate member 21 to the terminal holding portion 30. However, instead of the press-fit terminal 23, the external terminal 20 and the terminal holding portion 30 may be attached by crimping a terminal having a width larger than the diameter of the through hole 22 of the plate member 21.

[0026] Fig. 8 is a perspective view of press-fit terminal 23 included in semiconductor device 202 according to Variation 1 of Embodiment 1. Fig. 9 is a perspective view of press-fit terminal 23 included in semiconductor device 202 according to Variation 2 of Embodiment 1. As shown in Fig. 8, tip portion 26B of press-fit terminal 23 may have a press-fit shape, and as shown in Fig. 9, tip portion 26C of press-fit terminal 23 may have a fork shape.

[0027] The semiconductor element 5 is, for example, an IGBT (Insulated Gate Bipolar Transistor) using silicon (Si) as a semiconductor material, a diode, or other semiconductor element, but is not limited thereto and may be a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0028] Furthermore, in the first embodiment, an example in which the semiconductor element 5 uses Si as a semiconductor material will be described, but the semiconductor material is not limited to this, and may be a wide band gap semiconductor material such as SiC (silicon carbide), GaN (gallium nitride) or C (diamond). Here, the semiconductor element 5 is bonded to the circuit pattern 4 using a bonding member (not shown) such as solder or sintered paste containing silver.

[0029] Furthermore, the resin case 8 may be filled with a gel-like sealing member (not shown) such as silicone gel so as to cover the circuit board 1, and then cured.

[0030] Next, a method for manufacturing the semiconductor device 202 according to the first embodiment will be described with reference to Figs. 10 to 15. Fig. 10 is a flowchart showing a method for manufacturing the semiconductor device 202 according to the first embodiment. Fig. 11 is a cross-sectional view showing a step of preparing the circuit board 1 in the first embodiment. Fig. 12 is a cross-sectional view showing a step of attaching the external terminals 20 in the first embodiment. Fig. 13 is a cross-sectional view showing a step of applying the adhesive 10 in the first embodiment. Fig. 14 is a cross-sectional view showing a step of adhering the resin case 8 in the first embodiment. Fig. 15 is a cross-sectional view showing a wire bonding step in the first embodiment.

[0031] 10 and 11, the circuit board 1 is prepared (step S101). Although not shown in the drawings, the semiconductor element 5 is bonded to the circuit pattern 4 using a bonding member (not shown).

[0032] 10 and 12, the external terminal 20 is attached in a state of being in close contact with the upper surface of the terminal holding portion 30 (step S102). Here, the plate member 21 is attached to the terminal holding portion 30 in a horizontal direction. After that, the press-fit terminal 23 is press-fitted into the through hole 22 of the plate member 21. At this time, the plate member 21 and the press-fit terminal 23 are fixed by a reaction force of the press-fit portion 24A caused by the press-fitting, and at the same time, the tip portion 26A of the press-fit terminal 23 is crimped into the second groove 31B formed in the terminal holding portion 30, thereby fixing the external terminal 20 and the terminal holding portion 30.

[0033] 10 and 13, adhesive 10 is applied to the peripheral portion of circuit board 1 (step S103). Here, adhesive 10 is applied to the portion of the peripheral portion of circuit board 1 where insulating layer 3 is exposed. As adhesive 10, it is preferable to use an adhesive having insulating properties and having thermoplastic or thermosetting properties that harden when heat is applied. As the material of adhesive 10, a material containing silicone, a resin material containing epoxy or acrylic, or ceramic containing SiO2 may be used.

[0034] 10 and 14, the resin case 8 to which the external terminals 20 are attached is placed on the peripheral portion of the circuit board 1 via the adhesive 10 (step S104). In other words, the resin case 8 is fitted to the peripheral portion of the circuit board 1. At this time, the adhesive 10 is caused to wet and spread between the resin case 8 and the insulating layer 3 at the peripheral portion of the circuit board 1. It is also preferable that the adhesive 10 is caused to wet and spread not only between the resin case 8 and the peripheral portion of the circuit board 1 but also between the resin case 8 and the side portion of the insulating layer 3.

[0035] Next, the resin case 8 and the circuit board 1 that are fitted together are placed in a curing furnace for heat treatment. This hardens the adhesive 10, thereby bonding the resin case 8 to the peripheral portion of the circuit board 1. Here, a diagram showing the heat treatment process in the curing furnace is omitted.

[0036] 10 and 15, a wire bonding process is performed in which the semiconductor element 5 and the circuit pattern 4 are electrically connected using metal wires 7 (step S105). Note that FIG. 15 only shows wire bonding between the resin case 8 and the circuit pattern 4. Through the above, the semiconductor device 202 is completed. Furthermore, as a sealing process, a gel-like sealing material (not shown), such as silicone gel, may be filled in the resin case 8 so as to cover the circuit board 1, and then the gel-like sealing material may be hardened.

[0037] In the above description, the process of attaching the external terminals 20 (step S102) and the process of applying the adhesive 10 (step S103) are performed in this order, but the order is not limited to this, and the order of steps S102 and S103 may be reversed.

[0038] Next, the effect of the first embodiment will be described. The manufacturing method of the semiconductor device 202 according to the first embodiment includes a step (a) of preparing a circuit board 1 having an insulating layer 3 and a circuit pattern 4 formed on the upper surface of the insulating layer 3, and a semiconductor element 5 mounted on the upper surface of the circuit pattern 4, a step (b) of attaching the external terminals 20 in a state of being in close contact with the upper surface of a terminal holding portion 30 protruding from a peripheral wall portion 8A of a frame-shaped resin case 8 toward the inner periphery, a step (c) of applying an adhesive 10 to the peripheral portion of the circuit board 1, a step (d) of arranging the resin case 8 on the peripheral portion of the circuit board 1 via the adhesive 10, and a step (e) of bonding the peripheral portion of the resin case 8 and the circuit board 1 by hardening the adhesive 10. The manufacturing method of the semiconductor device 202 according to the first embodiment further includes a wire bonding step (f) of connecting the semiconductor element 5 and the circuit pattern 4 after the step (e).

[0039] Furthermore, a semiconductor device 202 manufactured by such a manufacturing method includes a circuit board 1 having an insulating layer 3 and a circuit pattern 4 formed on an upper surface of the insulating layer 3, a semiconductor element 5 mounted on the upper surface of the circuit pattern 4, a frame-shaped resin case 8 fixed to the peripheral portion of the circuit board 1 by an adhesive 10, and an external terminal 20 attached in a state of intimate contact with the upper surface of a terminal holding portion 30 protruding inward from a peripheral wall portion 8A of the resin case 8.

[0040] Therefore, the external terminals 20 are attached in a state of being in close contact with the upper surface of the terminal holding portion 30, so that the rattling of the external terminals 20 is suppressed, and vibration during wire bonding can be reduced. This makes it possible to suppress poor bonding during wire bonding. As a result, the reliability of the semiconductor device 202 is improved.

[0041] Moreover, the external terminal 20 includes a plate member 21 having a through hole 22, and a press-fit terminal 23 that fixes the plate member 21 to the terminal holding portion 30. The terminal holding portion 30 has a groove 31 formed on its upper surface corresponding to the through hole 22, and a guide groove 30A formed along the protruding direction of the terminal holding portion 30. The plate member 21 is attached to the terminal holding portion 30 by being guided by the guide groove 30A, and the press-fit terminal 23 is pressed into the through hole 22 of the plate member 21 and the groove 31 of the terminal holding portion 30, thereby fixing the plate member 21 to the terminal holding portion 30.

[0042] Therefore, the external terminals 20 can be firmly fixed to the terminal holding portions 30, which further enhances the effect of suppressing poor bonding during wire bonding.

[0043] Further, the press-fit terminal 23 has a shaft portion 23A, a press-fit portion 24A provided at one end of the shaft portion 23A, and a constricted portion 25A formed at the base of the press-fit portion 24A.

[0044] Therefore, even if the position of the through hole 22 of the plate member 21 shifts with respect to the groove 31 of the terminal holding portion 30, the press-fit portion 24A can conform to the groove 31 by the deformation of the constricted portion 25A.

[0045] Moreover, the groove 31 of the terminal holding portion 30 includes a first groove 31A and a second groove 31B formed below the first groove 31A and with a smaller diameter than the first groove 31A.

[0046] Therefore, since the terminal holding portion 30 and the press-fit terminal 23 are fixed at two locations, the first groove 31A and the second groove 31B, the fixing force between the terminal holding portion 30 and the press-fit terminal 23 can be improved.

[0047] <Embodiment 2> Next, a semiconductor device 202 according to a second embodiment will be described. Fig. 16 is a perspective view of a press-fit terminal 23 included in the semiconductor device 202 according to the second embodiment. Note that in the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals and the description thereof will be omitted. Also, the manufacturing method of the semiconductor device 202 according to the second embodiment is similar to the manufacturing method of the semiconductor device 202 according to the first embodiment, and therefore the description thereof will be omitted.

[0048] As shown in FIG. 16, in the second embodiment, the press-fit terminal 23 has an axis portion 23A, press-fit portions 24A and 24B provided at both ends of the axis portion 23A, and constricted portions 25A and 25B formed at the bases of the press-fit portions 24A and 24B, respectively.

[0049] As a result, in addition to fixing external terminal 20 and terminal holding portion 30, in embodiment 2, an external device (not shown) and press-fit portion 24B are connected. During this connection, even if the position of the opening of the external device into which press-fit terminal 23 is press-fitted shifts relative to press-fit terminal 23, constricted portion 25B deforms, allowing press-fit portion 24B to follow the opening.

[0050] Next, a description will be given of the effects of the semiconductor device 202 according to the second embodiment. In the semiconductor device 202 according to the second embodiment, the press-fit terminal 23 has a shaft portion 23A, press-fit portions 24A, 24B provided on both ends of the shaft portion 23A, and constricted portions 25A, 25B formed at the base of each of the press-fit portions 24A, 24B.

[0051] Therefore, as in the first embodiment, even if the position of the through hole 22 of the plate member 21 is misaligned with respect to the groove 31 of the terminal holding portion 30, the deformation of the constricted portion 25A enables the press-fit portion 24A to follow the groove 31. In addition, even if the position of the opening of the external device into which the press-fit terminal 23 is press-fitted is misaligned with respect to the press-fit terminal 23 when the external device (not shown) is connected to the press-fit portion 24B, the deformation of the constricted portion 25B enables the press-fit portion 24B to follow the opening. This allows a stable electrical connection between the semiconductor device 202 and the external device.

[0052] <Embodiment 3> Next, a semiconductor device 202 according to a third embodiment will be described. Fig. 17 is a perspective view of the terminal holding portion 30 included in the semiconductor device 202 according to the third embodiment. Fig. 18 is a cross-sectional view of the periphery of the terminal holding portion 30 included in the semiconductor device 202 according to the third embodiment. Note that in the third embodiment, the same components as those described in the first and second embodiments are denoted by the same reference numerals and will not be described. Also, the method for manufacturing the semiconductor device 202 according to the third embodiment is similar to the method for manufacturing the semiconductor device 202 according to the first embodiment, and therefore will not be described.

[0053] As shown in Figs. 17 and 18, the third embodiment differs from the first embodiment in the structure of the terminal holding portion 30. Specifically, a fitting groove 31C into which one longitudinal end of the plate member 21 can be fitted is formed at a connection portion between the terminal holding portion 30 and the inner peripheral surface of the peripheral wall portion 8A. This makes it possible to improve the fixing force between the plate member 21 and the terminal holding portion 30. Here, the one longitudinal end of the plate member 21 is the tip end in the direction in which the plate member 21 is inserted along the guide groove 30A. The fitting groove 31C can also be adopted in the semiconductor device according to the second embodiment.

[0054] Next, a description will be given of the effects of the semiconductor device 202 according to the third embodiment. In the semiconductor device 202 according to the third embodiment, a fitting groove 31C into which one longitudinal end of the plate member 21 can be fitted is formed at a connection portion between the terminal holding portion 30 and the inner circumferential surface of the peripheral wall portion 8A.

[0055] Therefore, the fixing force between the plate member 21 and the terminal holding portion 30 can be improved, so that the plate member 21 can be prevented from coming off the terminal holding portion 30.

[0056] <Fourth embodiment> In this embodiment, the semiconductor device 202 according to the above-mentioned embodiments 1 to 3 is applied to a power conversion device. Although the application of the semiconductor device 202 according to the embodiments 1 to 3 is not limited to a specific power conversion device, a case where the semiconductor device 202 according to the embodiments 1 to 3 is applied to a three-phase inverter will be described below as embodiment 4.

[0057] FIG. 19 is a block diagram showing a configuration of a power conversion system to which a power conversion device 200 according to the fourth embodiment is applied.

[0058] The power conversion system shown in Fig. 19 is composed of a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power conversion device 200. The power source 100 can be composed of various things, for example, a DC system, a solar cell, or a storage battery, or it may be composed of a rectifier circuit connected to an AC system or an AC / DC converter. The power source 100 may also be composed of a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0059] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. As shown in Fig. 19, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0060] The load 300 is a three-phase motor driven by AC power supplied from the power conversion device 200. The load 300 is not limited to a specific use, but is a motor mounted on various electric devices, and is used as, for example, a motor for a hybrid car, an electric car, a railroad car, an elevator, or an air conditioner.

[0061] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes switching elements (not shown) and free wheel diodes (not shown), and converts DC power supplied from the power source 100 into AC power by switching the switching elements, and supplies the AC power to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to this embodiment is a two-level three-phase full bridge circuit, and can be configured with six switching elements and six free wheel diodes connected in inverse parallel to each switching element. The semiconductor device 202 according to any one of the above-mentioned embodiments 1 to 3 is applied to at least one of the switching elements and free wheel diodes of the main conversion circuit 201. Two switching elements of the six switching elements are connected in series to configure upper and lower arms, and each upper and lower arm configures each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0062] The main conversion circuit 201 also includes a drive circuit (not shown) for driving each switching element, but the drive circuit may be built in the semiconductor device 202, or the semiconductor device 202 may be provided with a drive circuit separately. The drive circuit generates drive signals for driving the switching elements of the main conversion circuit 201 and supplies them to the control electrodes of the switching elements of the main conversion circuit 201. Specifically, in accordance with a control signal from a control circuit 203 (described later), the drive circuit outputs to the control electrodes of each switching element a drive signal for turning the switching element on and a drive signal for turning the switching element off. When maintaining a switching element in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when maintaining a switching element in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the switching element.

[0063] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that a desired power is supplied to the load 300. Specifically, the control circuit 203 calculates the time (on time) for each switching element of the main conversion circuit 201 to be in the on state based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on time of the switching elements according to the voltage to be output. Then, a control command (control signal) is output to a drive circuit provided in the main conversion circuit 201 so that an on signal is output to a switching element that should be in the on state at each time point, and an off signal is output to a switching element that should be in the off state. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

[0064] In the power conversion device 200 according to the present embodiment, the semiconductor device 202 according to any one of the first to third embodiments is applied as the switching element and free wheel diode of the main conversion circuit 201, and therefore, improvement in reliability can be achieved.

[0065] In the present embodiment, an example in which the semiconductor device 202 according to the first to third embodiments is applied to a two-level three-phase inverter has been described, but the application of the semiconductor device 202 according to the first to third embodiments is not limited to this, and the semiconductor device 202 can be applied to various power conversion devices. In the present embodiment, the two-level power conversion device is described, but the semiconductor device 202 according to the first to third embodiments may be applied to a three-level or multi-level power conversion device, and when power is supplied to a single-phase load, the semiconductor device 202 according to the first to third embodiments may be applied to a single-phase inverter. Furthermore, when power is supplied to a DC load or the like, the semiconductor device 202 according to the first to third embodiments can also be applied to a DC / DC converter or an AC / DC converter.

[0066] In addition, the power conversion device to which the semiconductor device 202 according to any one of the first to third embodiments is applied is not limited to the case where the load described above is an electric motor, but can also be used, for example, as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, or the like.

[0067] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0068] Various aspects of the present disclosure are summarized below as appendices.

[0069] (Appendix 1) (a) preparing a circuit board having an insulating layer and a circuit pattern formed on an upper surface of the insulating layer, the circuit pattern having a semiconductor element mounted on the upper surface of the circuit pattern; (b) attaching the external terminals in a state of being in close contact with an upper surface of a terminal holding portion protruding from a peripheral wall portion of a frame-shaped resin case toward an inner peripheral side; (c) applying an adhesive to a peripheral portion of the circuit board; (d) placing the resin case on the peripheral portion of the circuit board via the adhesive; (e) curing the adhesive to bond the resin case and the peripheral portion of the circuit board; A manufacturing method of a semiconductor device comprising:

[0070] (Appendix 2) (f) after the step (e), a wire bonding step of connecting the semiconductor element and the circuit pattern is further included in the method for manufacturing a semiconductor device according to claim 1.

[0071] (Appendix 3) a circuit board having an insulating layer and a circuit pattern formed on an upper surface of the insulating layer; a semiconductor element mounted on an upper surface of the circuit pattern; a frame-shaped resin case fixed to a peripheral portion of the circuit board by an adhesive; an external terminal attached in intimate contact with an upper surface of a terminal holding portion protruding from a peripheral wall portion of the resin case toward an inner peripheral side; A semiconductor device comprising:

[0072] (Appendix 4) The external terminal includes a plate member having a through hole and a press-fit terminal that fixes the plate member to the terminal holding portion, the terminal holding portion has a groove formed on the upper surface and corresponding to the through hole, and a guide groove formed along a protruding direction of the terminal holding portion, The plate member is attached to the terminal holding portion by being guided by the guide groove, 4. The semiconductor device according to claim 3, wherein the press-fit terminal is press-fitted into the through hole of the plate member and the groove of the terminal holding portion to fix the plate member to the terminal holding portion.

[0073] (Appendix 5) 5. The semiconductor device according to claim 4, wherein the press-fit terminal has a shaft portion, a press-fit portion provided at one end of the shaft portion, and a constricted portion formed at a base of the press-fit portion.

[0074] (Appendix 6) 5. The semiconductor device according to claim 4, wherein the press-fit terminal has an axis portion, press-fit portions provided on both ends of the axis portion, and constrictions formed at the base of each of the press-fit portions.

[0075] (Appendix 7) 7. The semiconductor device according to claim 4, wherein a fitting groove into which one end of the plate member can be fitted is formed at a connection portion between the inner circumferential surface of the peripheral wall portion and the terminal holding portion.

[0076] (Appendix 8) 8. The semiconductor device according to claim 4, wherein the groove of the terminal holding portion includes a first groove and a second groove formed lower than the first groove and with a smaller diameter.

[0077] (Appendix 9) A main conversion circuit having the semiconductor device according to any one of Supplementary Note 3 to Supplementary Note 8, which converts input power and outputs the converted power; a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit; A power conversion device comprising: [Explanation of symbols]

[0078] 1 circuit board, 3 insulating layer, 4 circuit pattern, 5 semiconductor element, 8 resin case, 8A peripheral wall portion, 20 external terminal, 21 plate member, 22 through hole, 23 press-fit terminal, 23A shaft portion, 24A, 24B press-fit portion, 25A, 25B constricted portion, 30 terminal holding portion, 30A guide groove, 31 groove, 31A first groove, 31B second groove, 31C fitting groove, 200 power conversion device, 201 main conversion circuit, 202 semiconductor device, 203 control circuit.

Claims

1. (a) preparing a circuit board having an insulating layer and a circuit pattern formed on an upper surface of the insulating layer, the circuit pattern having a semiconductor element mounted on the upper surface of the circuit pattern; (b) attaching the external terminals in a state of being in close contact with an upper surface of a terminal holding portion protruding from a peripheral wall portion of a frame-shaped resin case toward an inner peripheral side; (c) applying an adhesive to a peripheral portion of the circuit board; (d) placing the resin case on the peripheral portion of the circuit board via the adhesive; (e) curing the adhesive to bond the resin case and the peripheral portion of the circuit board; A manufacturing method of a semiconductor device comprising:

2. 2. The method for manufacturing a semiconductor device according to claim 1, further comprising: (f) a wire bonding step, after said step (e), of connecting said semiconductor element and said circuit pattern.

3. a circuit board having an insulating layer and a circuit pattern formed on an upper surface of the insulating layer; a semiconductor element mounted on an upper surface of the circuit pattern; a frame-shaped resin case fixed to a peripheral portion of the circuit board by an adhesive; an external terminal attached in intimate contact with an upper surface of a terminal holding portion protruding from a peripheral wall portion of the resin case toward an inner peripheral side; A semiconductor device comprising:

4. The external terminal includes a plate member having a through hole and a press-fit terminal that fixes the plate member to the terminal holding portion, the terminal holding portion has a groove formed on the upper surface and corresponding to the through hole, and a guide groove formed along a protruding direction of the terminal holding portion, The plate member is attached to the terminal holding portion by being guided by the guide groove, The semiconductor device according to claim 3 , wherein the press-fit terminal is press-fitted into the through hole of the plate member and the groove of the terminal holding portion, thereby fixing the plate member to the terminal holding portion.

5. 5. The semiconductor device according to claim 4, wherein the press-fit terminal has a shaft portion, a press-fit portion provided at one end of the shaft portion, and a constricted portion formed at a base of the press-fit portion.

6. 5. The semiconductor device according to claim 4, wherein the press-fit terminal has a shaft portion, press-fit portions provided on both ends of the shaft portion, and a constricted portion formed at a base of each of the press-fit portions.

7. 5. The semiconductor device according to claim 4, wherein an engagement groove into which one end of said plate member is fitted is formed in an inner peripheral surface of said peripheral wall portion at a connection portion with said terminal holding portion.

8. 5. The semiconductor device according to claim 4, wherein said grooves of said terminal holding portion include a first groove and a second groove formed below said first groove and with a smaller diameter than said first groove.

9. A main conversion circuit having the semiconductor device according to any one of claims 3 to 8, which converts input power and outputs the converted power; a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit; A power conversion device comprising:

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