Light-emitting device

Abstract

To provide a sealed body that is sealed uniformly, a light-emitting module that is sealed uniformly, and a manufacturing method for a uniform sealed body.SOLUTION: A structure of providing on a side opposite to a side where an energy beam is incident with a sealing material held therebetween is focused. Regions with high reflectivity and low reflectivity to the energy beam are provided alternately so as to overlap with the sealing material that surrounds a sealed body.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a sealing body, or to a light-emitting module in which a light-emitting element is sealed. The present invention also relates to a method for producing a sealing body. [Background technology]

[0002] In order to prevent impurities from entering from the outside world from damaging the properties of the sealed object, There is known a technique for sealing the semiconductor device in a sealing body.

[0003] To reduce damage to the sealed object when the object has low heat resistance. It is especially desirable to lower the temperature required for the sealing process. Organic materials such as resins, which can generally be solidified or hardened at low temperatures, are advantageous for lowering the temperature of the sealing process. It can be said that.

[0004] On the other hand, it is preferable that the material used for the sealing material has a low diffusion rate of impurities. In general, inorganic materials have a high density and a low diffusion rate, making them suitable for use as sealing materials. I can say.

[0005] In order to achieve both a lower temperature required for the sealing process and sealing performance, the melting point is lower than that of other inorganic materials. A structure is known in which a low melting point glass, which has a relatively low melting point, is used as a sealing material. A laser beam is irradiated onto a low-melting glass sandwiched between a pair of substrates including a light-transmitting substrate. According to this method, the pair of substrates are fused together by locally heating the substrate. It is possible to produce a sealed body without damaging the sealed body, which has low heat resistance (Patent Document 1). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2007-200835 Summary of the Invention [Problem to be solved by the invention]

[0007] This is a sealing material that is melted by locally heating it using energy rays such as a laser beam. When bonding a pair of substrates together, there are areas where the sealing material is not heated sufficiently or where excessive energy is applied. In some cases, defects may occur in the areas where the ray is irradiated. For example, the area may not be heated enough to melt. Defects where gaps occur in the sealing material that did not reach the required level, or where the sealing material melts or melts due to excessive heating. There may be defects that cause the chip to flow or damage the surrounding structure. be.

[0008] The energy received by the encapsulant depends on the intensity of the irradiated energy rays and the absorption of the energy rays by the encapsulant. For example, the incidence of energy rays through a sealing material is not determined solely by the ease of absorption. It is also influenced by the composition on the side and the side facing it.

[0009] For example, a first substrate having regions with different reflectances to energy rays and a second substrate having regions with different reflectances to energy rays The sealing material between the first and second substrates is irradiated with energy rays from the second substrate side. In the case where the first substrate and the second substrate are bonded together using the sealing material, the amount of energy irradiated is The intensity of the energy rays is adjusted to match the encapsulant that overlaps the area of ​​the first substrate that has high reflectivity for the energy rays. When the reflectance of the energy beam is determined by the above, the reflectance of the sealing material overlapping the region of the first substrate with low reflectance of the energy beam is determined. In addition, the intensity of the irradiated energy beam is reduced by the energy of the first substrate. When the encapsulant overlaps the area with low reflectivity of the first substrate, the energy Any encapsulant that overlaps an area with high reflectivity of the Gamma rays will receive excessive energy.

[0010] One aspect of the present invention has been made in light of this technical background. It is an object of the present invention to provide a sealed body in which light is uniformly sealed. It is an object of the present invention to provide a module. Alternatively, it is an object of the present invention to provide a method for manufacturing a uniform sealed body. One of the objectives of the project is to [Means for solving the problem]

[0011] In order to solve the above problems, one embodiment of the present invention is a semiconductor device having a sealing material sandwiched between an energy ray incident side and an energy ray incident side. It was created with a focus on the structure of the opposing sides. We came up with a configuration that solved the above problem.

[0012] In other words, the sealing body of one embodiment of the present invention is formed by applying energy to the sealing material surrounding the body to be sealed. A first substrate having alternating regions of high reflectivity and low reflectivity to energy rays; The sealing material provided between the first and second substrates, which transmit the lines, bonds the first and second substrates together. The present invention has a configuration in which the above-mentioned

[0013] That is, one aspect of the present invention is a semiconductor device comprising a first substrate, a second substrate that transmits energy rays, and a second substrate. A sealed body is disposed between the first substrate and the second substrate, and the sealed body is surrounded by the first substrate and the second substrate. The first substrate is bonded to the sealing material. and a high reflectivity region that reflects part of the energy ray and a low reflectivity region. The low reflectance region and the sealing material are alternately provided at positions overlapping each other, and the sealing material is configured to block a part of the energy rays. It includes an absorbing low melting point glass layer.

[0014] According to the configuration of the sealing body of the above aspect of the present invention, light is irradiated from the second substrate side toward the high reflectance region. A portion of the irradiated energy beam that is not absorbed by the encapsulant is reflected by the high reflectivity area, As a result, the energy rays are efficiently used to heat the encapsulant. Not only this, but the sealing material can be heated uniformly in the thickness direction.

[0015] In addition, the energy rays irradiated from the second substrate side toward the low reflectance region are absorbed by the sealing material. The part of the light that does not reach the low reflectance region reaches the low reflectance region. The reflectance of the low reflectance region is lower than that of the high reflectance region. Therefore, the energy is used to heat the encapsulant with reduced efficiency compared to the areas overlapping with the high reflectivity areas. As a result, the encapsulant does not heat up excessively.

[0016] In one embodiment of the present invention, a sealing body has a first substrate in which high reflectance regions and low reflectance regions are alternately sealed. The ratio of the area of ​​the low reflectance area to the area of ​​the high reflectance area is The efficiency with which the energy rays heat the encapsulant can be adjusted by changing the rate, resulting in uniform encapsulation. Therefore, it is possible to provide a highly reliable sealing body.

[0017] In addition, one aspect of the present invention is the above-mentioned semiconductor device, in which the high reflectance region and the low reflectance region extend along the sealing material. It is a sealing body.

[0018] The functions and effects of the configuration of the sealing body according to one embodiment of the present invention will be described below. An example of a sealed body produced by scanning and irradiating a sealing material with energy rays will be described below.

[0019] The cumulative intensity of the energy beam received by the encapsulant in the direction perpendicular to the scanning direction of the energy beam If there is a distribution in the heating temperature, the sealing material cannot be heated uniformly, which may result in defective sealing. However, if high reflectance regions and low reflectance regions are provided according to the integrated intensity of the energy rays, Specifically, the integrated intensity of the energy beam can be adjusted so that the sealing material is heated uniformly. All you have to do is provide a high reflectance area in the low part and a low reflectance area in the high part. This allows for the correction of the distribution of the integrated energy intensity, resulting in a uniform and highly reliable sealing. You can donate your body.

[0020] In addition, high reflectance and low reflectance areas are provided along the encapsulant, so that the The intensity of the energy beam reflected by the high reflectance area is stable, and the irradiation intensity of the energy beam is stable under various conditions. The conditions do not need to be changed depending on the configuration of the scanning part. As a result, a uniformly sealed and reliable In addition, the energy beam irradiation device can be simplified.

[0021] In one embodiment of the present invention, high reflectance regions and low reflectance regions alternately intersect with the sealing material to form a seal. The sealing body extends outside the sealing material.

[0022] The functions and effects of the configuration of the sealing body according to one embodiment of the present invention will be described below. An example of a sealed body produced by scanning and irradiating a sealing material with energy rays will be described below.

[0023] When high reflectivity regions and low reflectivity regions alternately cross the encapsulant, they overlap with the high reflectivity regions. The encapsulant is heated strongly, while the encapsulant overlapping the low reflectivity area is heated weakly. The encapsulant overlapping the low reflectivity areas between the high reflectivity areas reduces heat transfer and saves energy. This prevents the temperature of parts not irradiated with gas rays from becoming too high.

[0024] In addition, if the high reflectance region and the low reflectance region extend outside the encapsulant, Unnecessary heat is discharged to the outside of the encapsulant from the side with better thermal conductivity, and the temperature inside the encapsulant becomes high. Or, the two parts with good thermal conductivity are bonded to each other on the outside of the sealing material. This suppresses the phenomenon of the heat being discharged being transferred. Therefore, a highly efficient sealing body can be provided.

[0025] In addition, in order to stabilize the intensity of the energy rays reflected by the high reflectance region toward the sealing material, The reflective and low-reflective regions are arranged in a regular alternating pattern along the encapsulant. Therefore, it is not necessary to change conditions such as the irradiation intensity of the energy beam depending on the configuration of the scanning portion. As a result, a uniformly sealed and highly reliable sealed body can be provided. This simplifies the setup.

[0026] In one embodiment of the present invention, the ratio of the area of ​​the low reflectance region to the area of ​​the high reflectance region is Compared to the overlapping area of ​​the encapsulant with a small radius of curvature, the overlapping area of ​​the encapsulant with a large radius of curvature The above-mentioned encapsulation is small.

[0027] The functions and effects of the configuration of the sealing body according to one embodiment of the present invention will be described below. An example of a sealed body produced by scanning and irradiating a sealing material with energy rays will be described below.

[0028] In order to heat the sealing material uniformly, the intensity and scanning speed of the energy beam should be kept constant. However, in areas where the radius of curvature of the encapsulant is small, the scanning speed needs to be accelerated and decelerated significantly. It is difficult to keep the scanning speed constant, and as a result the encapsulant tends to heat up too much.

[0029] The scanning speed of the energy beam is determined based on the shape of the encapsulant, and the high speed is set in advance accordingly. By changing the ratio of the area of ​​the low reflectance region to the area of ​​the reflectance region, As a result, a uniformly sealed and highly reliable seal can be provided. In addition, the energy beam irradiation device can be simplified.

[0030] In addition, one aspect of the present invention is a semiconductor device comprising a metal layer in a high reflectance region and an insulating layer in a low reflectance region. The sealing body is as described above.

[0031] The sealing body according to one embodiment of the present invention has a metal layer provided in the high reflectance region overlapping the sealing material. As a result, a uniformly sealed and highly reliable sealed body can be obtained. Alternatively, a sealing body having a reduced external size can be provided. Various elements that can be electrically connected to a circuit (e.g., electronic elements, light-emitting elements, circuit elements) It is possible to provide a sealed body using a semiconductor device (such as a semiconductor memory device, ...

[0032] In one embodiment of the present invention, the above-described sealed body includes a first electrode and a second electrode as a sealed body. The light-emitting module is a sealed light-emitting element having a layer containing a light-emitting organic compound therebetween.

[0033] The light-emitting module according to the embodiment of the present invention is not subject to loss of reliability due to diffusion of impurities in the atmosphere. Even if the light-emitting element does not have the heat resistance to withstand the high temperature sealing process, The sealing can be achieved without exposure to high temperatures, resulting in a uniformly sealed and highly reliable light-emitting module. We can provide you with the

[0034] Another embodiment of the present invention is an electronic device using the above-described light-emitting module.

[0035] The electronic device according to one embodiment of the present invention includes a light-emitting module that is uniformly sealed and highly reliable. As a result, a highly reliable electronic device can be provided.

[0036] Another embodiment of the present invention is a method for manufacturing a sealed structure including a first step and a second step. It is.

[0037] The first step is to create a high reflectivity region on one side that reflects part of the energy beam, and a low reflectivity region on the other side that reflects the energy beam. a first substrate having a low reflectance region having a reflectance to Gamma rays lower than that of a high reflectance region; a second substrate that transmits the energy beam; a sealed body; and a highly reflective substrate that surrounds the sealed body. A low-melting-point glass layer that absorbs part of the energy rays is placed at the position where the low-reflectance area and the low-reflectance area overlap. and a sealing material provided on one surface of the first substrate or one surface of the second substrate. This is the step to do so.

[0038] In the second step, a sealing material is sandwiched between one surface of the first substrate and one surface of the second substrate. In this state, an energy beam is irradiated from the other surface of the second substrate while scanning along the sealing material. This is a step of irradiating light onto the first substrate and sealing the object to be sealed between the first substrate and the second substrate.

[0039] According to the method for manufacturing a sealed structure according to one embodiment of the present invention, the second substrate is A part of the energy ray that is not absorbed by the sealing material is reflected by the high reflectance area, The energy rays reach the sealing material from the first substrate side. As a result, the energy rays are efficiently used to heat the sealing material. Not only can it be used, but it can also heat the sealing material uniformly in the thickness direction.

[0040] In addition, the energy rays irradiated from the second substrate side toward the low reflectance region are absorbed by the sealing material. The part of the light that does not reach the low reflectance region reaches the low reflectance region. The reflectance of the low reflectance region is higher than that of the high reflectance region. Because the reflectance is low, energy is used to heat the encapsulant with reduced efficiency compared to areas that overlap with high reflectance areas. A wire is used so that the encapsulant does not heat up too much.

[0041] According to the method for manufacturing a sealed structure of one embodiment of the present invention, a high reflectance region and a low reflectance region are formed on the first substrate. Since the regions are alternately arranged at positions overlapping the sealing material, the ratio of the high reflectance region to the area of ​​the high reflectance region is low. The efficiency with which the energy rays heat the sealing material can be adjusted by adjusting the area ratio of the reflectance regions. As a result, a method for producing a uniformly sealed and highly reliable sealed body can be provided.

[0042] In addition, one aspect of the present invention is a method for manufacturing a semiconductor device, comprising: scanning an energy beam from the second substrate side along a sealing material; Regarding the speed of irradiation from the surface, the ratio of the area of ​​the low reflectance area to the area of ​​the high reflectance area is large. The ratio of the area of ​​the low reflectance region to the area of ​​the high reflectance region is smaller than that of the low reflectance region. The method for producing the above encapsulated body is fast.

[0043] According to the method for manufacturing a sealed structure of one embodiment of the present invention, the energy ray irradiation device Even if the sealing material has a shape that is difficult to scan with a scanner (e.g., a complexly curved shape), The ratio of the area of ​​the low reflectance region to the area of ​​the high reflectance region is increased according to the scanning speed. By providing this, it is possible to prevent the temperature from rising too high due to excessive irradiation of energy rays. Also, the area that can be scanned at high speed is the area of ​​the low reflectance region relative to the area of ​​the high reflectance region. A phenomenon in which heating is insufficient due to the ratio of the area of ​​the region being set small according to the scanning speed. As a result, a method for producing a uniformly sealed and highly reliable sealed body can be provided. Alternatively, the time required for the sealing process can be shortened.

[0044] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, the light-emitting layer containing an organic compound, which is a light-emitting material, sandwiched between the electrodes is one of the EL layers. This is an embodiment.

[0045] In addition, in the present specification, when a substance A is dispersed in a matrix made of another substance B, The substance B that constitutes the trix is ​​called the host material, and the substance A that is dispersed in the matrix is ​​called the guest material. In addition, each of Substance A and Substance B may be a single substance. It may be a mixture of two or more substances.

[0046] In this specification, the term "light-emitting device" refers to an image display device, a light-emitting device, or a light Also, the light emitting device is connected to a connector, such as FPC (Flexib le printed circuit) or TCP (Tape Carrier The module has a printed wiring board at the end of the TCP. COG (Chip On Glass) is applied to the module or substrate on which the light emitting element is formed. ) method, all modules in which ICs (integrated circuits) are directly mounted are also included in the light-emitting device. do. Effect of the Invention

[0047] According to one aspect of the present invention, a sealing body that is uniformly sealed can be provided. Alternatively, a method for producing a uniform encapsulant can be provided. [Brief description of the drawings]

[0048] [Figure 1] 1A to 1C are diagrams illustrating a structure of a sealing body according to an embodiment. [Diagram 2] 1A to 1C are diagrams illustrating a structure of a sealing body according to an embodiment. [Diagram 3] 1A to 1C are diagrams illustrating a structure of a sealing body according to an embodiment. [Figure 4] 1A to 1C illustrate a method for manufacturing a sealed structure according to an embodiment. [Diagram 5] 1A to 1C are diagrams illustrating a structure of a light-emitting panel according to an embodiment. [Figure 6] 1A to 1C illustrate a structure of a light-emitting element according to an embodiment. [Figure 7] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 8] 1A to 1C are diagrams illustrating a structure of a sealing body according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0049] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation will be omitted.

[0050] (Embodiment 1) In this embodiment, a structure of a sealed structure according to one embodiment of the present invention will be described. a second substrate that transmits energy rays; and an object to be sealed between the first substrate and the second substrate. a sealing material that surrounds the sealed object and bonds the first substrate and the second substrate together. The first substrate has a high reflectivity region that reflects a part of the energy beam and a high reflectivity region that is resistant to the energy beam. The low reflectance region, which has a reflectance lower than that of the high reflectance region, is provided alternately at a position overlapping the sealing material. The encapsulant also includes a low melting point glass layer that absorbs a portion of the energy rays.

[0051] According to the configuration of the sealing body exemplified in this embodiment, the light is guided from the second substrate side toward the high reflectance region. A part of the irradiated energy ray that is not absorbed by the sealing material is reflected by the high reflectivity area, As a result, the energy rays are efficiently used to heat the encapsulant. Not only this, but the sealing material can be heated uniformly in the thickness direction.

[0052] In addition, the energy rays irradiated from the second substrate side toward the low reflectance region are absorbed by the sealing material. The part of the light that does not reach the low reflectance region reaches the low reflectance region. The reflectance of the low reflectance region is lower than that of the high reflectance region. Therefore, the energy is used to heat the encapsulant with reduced efficiency compared to the areas overlapping with the high reflectivity areas. As a result, the encapsulant does not heat up excessively.

[0053] In one embodiment of the present invention, a sealing body has a first substrate in which high reflectance regions and low reflectance regions are alternately sealed. Since the reflectance is set at a position overlapping the material, the area of ​​the low reflectance area relative to the area of ​​the high reflectance area The efficiency with which the energy rays heat the encapsulant can be adjusted by changing the ratio of It is possible to provide a highly reliable sealed body.

[0054] The structure of a sealing body exemplified in this embodiment will be described with reference to FIGS.

[0055] FIG. 1A is a top view of a sealed structure of one embodiment of the present invention, and FIG. 1B is a cross-sectional view of FIG. FIG. 2 is a cross-sectional view taken along the line M1-M2-M3-M4.

[0056] The sealing body 100 shown in FIG. 1 includes a first substrate 101 and a The second substrate 102, the object to be sealed 110, and the first substrate 102 surrounding the object to be sealed 110 are and a sealant 131 that bonds the first substrate 101 and the second substrate 102 together.

[0057] The first substrate 101 has a high reflectance region 105a that reflects a part of the energy beam and an energy The reflectance of the high reflectance region 105a to the y-ray is lower than that of the low reflectance region 105b. The sealing material 131 is provided at a position where it overlaps with the sealing material 131. The sealing material 131 absorbs a part of the energy rays. The low melting point glass layer is

[0058] The sealing body 100 illustrated in FIG. 1 has a high reflectance region 105a and a low reflectance region 105b. , alternately intersect with the sealing material 131 and extend outside the sealing material 131. The first connection terminal 3 and the second connection terminal 104 are both electrically connected to the object to be sealed 110 .

[0059] The functions and effects of the configuration of the sealed body 100 according to one embodiment of the present invention will be described from the second substrate 102 side. An example of a sealant produced by scanning and irradiating an energy beam along the sealant 131 will be described. do.

[0060] The high reflectance region 105a and the low reflectance region 105b alternately intersect with the sealing material 131. The sealing material 131 overlapping the high reflectance region 105a is heated strongly, but the sealing material 131 overlapping the low reflectance region 105a is heated strongly. The encapsulant 131 overlapping the high reflectivity regions 105a and 105b is heated weakly. The sealing material 131 overlapping the low reflectance region 105b suppresses the transfer of heat and prevents the energy rays from This can prevent the temperature of non-irradiated areas from becoming too high.

[0061] In addition, the high reflectance region 105a and the low reflectance region 105b extend outside the sealing material 131. When the sealing material 131 is placed in the sealing member 131, unnecessary heat is discharged to the outside of the sealing material 131 from the region having a better thermal conductivity. This can prevent the temperature inside the sealing body 100 from becoming too high. The phenomenon that the two with good conductivity contact each other on the outside of the sealing material 131 and transfer the exhausted heat is suppressed. As a result, it is possible to provide a uniformly sealed body 100 with high reliability.

[0062] In addition, high reflectance regions 105a and low reflectance regions 105b are arranged alternately along the sealing material 131. Therefore, the energy reflected by the high reflectance region 105a toward the sealing material 131 is As a result, the conditions of the energy beam irradiation intensity, etc. can be adjusted according to the structure of the scanning part. As a result, it is possible to obtain a uniformly sealed and highly reliable sealant 100. In addition, the energy beam irradiation device can be simplified.

[0063] As a modification of this embodiment, a configuration different from that shown in FIG. 1 is shown in FIG. The high reflectance region 105a and the low reflectance region 105b shown in FIG. To insert.

[0064] In addition, the sealing body 100 illustrated in FIG. 1 has a low reflectance region relative to the area of ​​the high reflectance region 105a. The area ratio of the region 105b is larger than that of the portion overlapped by the sealing material 131 having a smaller radius of curvature. The sealant 131 with a large radius is small at the overlapping portion.

[0065] The functions and effects of the configuration of the sealing body 100 exemplified in this embodiment will be described below. The sealing material 131 is scanned and irradiated with energy rays from the side 102 to produce a sealing material. Let me explain using the body as an example.

[0066] In order to uniformly heat the sealing material 131, the energy rays The strength and scanning speed should be constant. However, in the portion where the curvature radius of the sealing material 131 is small, The scanning speed needs to be significantly accelerated or decelerated, making it difficult to keep the integrated intensity constant. Therefore, the sealing material 131 tends to be heated strongly.

[0067] An example in which a laser beam is used as the energy beam will be described with reference to FIG. 1(C). The left diagram of (C) is a schematic diagram of a laser beam scanning along the bent portion of the sealing material 131. The laser beam entering the bent part from the right side of the paper changes its direction at the bent part. The laser beam decelerates in the vertical direction of the paper and accelerates in the vertical direction of the paper. The bent parts are irradiated and sealing failures are likely to occur.

[0068] In the sealing body according to one embodiment of the present invention, a high reflectance region is previously formed according to the scanning speed of the energy beam. The ratio of the area of ​​the low reflectance region to the area of ​​the sealing material is changed to adjust the efficiency of heating the sealing material. An example of a sealed structure according to one embodiment of the present invention is shown in the right diagram in FIG. The beam passes through a straight section in which a high reflectance region 105a is provided from the right side of the paper and enters a bent section. The bent portion is formed by changing the ratio of the area of ​​the low reflectance region 105b to the area of ​​the high reflectance region 105a. Because of the increased heat transfer rate, the laser beam heats the encapsulant less efficiently than in other areas. As a result, the vehicle slows down to change direction at the bend, and while accelerating in the vertical direction of the paper, Even if the laser beam is excessively irradiated onto the substrate, defective sealing is unlikely to occur.

[0069] That is, the scanning speed of the energy beam is determined in advance based on the shape of the sealing material 131, Accordingly, the ratio of the area of ​​the low reflectance region 105b to the area of ​​the high reflectance region 105a The efficiency of heating the sealing material 131 is adjusted by changing the temperature. It is possible to provide a highly reliable sealed body. In addition, the energy beam irradiation device can be simplified. Cut.

[0070] As a modification of this embodiment, a configuration different from that shown in FIG. 1(C) is shown in FIG. In the configuration illustrated in FIG. 8(B), the high reflectivity region 105a in the scanning direction of the energy beam By shortening the length of the bent portion, a low reflectance relative to the area of ​​the high reflectance region 105a is achieved. The reflectance region 105b forms a portion having a large area ratio.

[0071] The individual elements constituting the sealing body exemplified in this embodiment will be described below.

[0072] <First substrate and second substrate> The first substrate 101 and the second substrate 102 are each made of a material that can withstand the manufacturing process of the sealing body. The thickness and size of the heat-resistant layer are not particularly limited as long as they are applicable to the manufacturing equipment. In addition, the film may have a single layer structure or a laminated structure of two or more layers.

[0073] The first substrate 101 and the second substrate 102 have gas barrier properties. It is provided between the first substrate 101 and the second substrate 102 and the sealed object to provide gas barrier properties. The degree of gas barrier property can be determined by designing according to the characteristics of the object to be sealed. good.

[0074] For example, a light-emitting element having a layer containing a light-emitting organic compound between a pair of electrodes is used as the object to be sealed. In this case, the gas barrier property is 10 -5 g / m 2 ·Day or less, preferred 10 -6 g / m 2 The first substrate having this level of gas barrier property is By sealing the light emitting element between the first substrate 101 and the second substrate 102, a highly reliable light emitting element can be obtained. Optical modules can be provided.

[0075] In addition, the first substrate 101 and the second substrate 102 are flexible enough not to destroy the sealing material 131. The substrate may be flexible. The substrate having flexibility is, for example, a substrate having a thickness of 50 μm or more. Thin glass or metal foil with a thickness of less than 0 μm can be used.

[0076] The first substrate 101 may be a substrate using an inorganic material or a composite material of an organic material and an inorganic material. The substrate using an inorganic material may be, for example, a glass substrate or a ceramic substrate. Examples of substrates using composite materials of organic and inorganic materials include glass substrates and metal substrates. For example, laminates of resin substrates and inorganic materials, FRP (Fiberglass-Reinforced Plastics) ced Plastics), prepregs, etc.

[0077] The second substrate 102 may be made of an inorganic material like the first substrate 101, or an organic material. The second substrate 102 may be a substrate using a composite material of an inorganic material. A region that transmits the -ray is provided at a position overlapping with the sealing material 131.

[0078] Here, the energy rays that can be used in the sealing process will be described. Anything that can transmit energy locally to the irradiated area is acceptable. For example, a particle beam beams (e.g., electron beams, etc.), electromagnetic beams (e.g., light beams, microwave beams, etc.), Examples include sound wave beams.

[0079] In particular, a light beam emitted by a laser (also called a laser beam) is convenient. When used, high-density energy can be absorbed by the encapsulant 131 without being absorbed by the second substrate 102. It can be selectively absorbed into

[0080] The wavelength of the light beam is selected in consideration of the combination of the second substrate 102 and the sealing material 131. Any of ultraviolet light, visible light, and infrared light may be used.

[0081] The laser may be, for example, a solid-state laser, a gas laser, or a semiconductor laser. do.

[0082] The second substrate 102 to which the laser beam can be applied is a substrate that transmits the laser beam. For example, when a visible laser beam is used and an inorganic material is used for the second substrate 102, The substrate 102 may be, for example, a non-alkali glass substrate, a barium borosilicate glass substrate, An aluminoborosilicate glass substrate, a quartz substrate, a sapphire substrate, or the like can be used.

[0083] <High reflectance area and low reflectance area> The high reflectance region 105a is more sensitive to light incident from the second substrate 102 side than the low reflectance region 105b. The high reflectance region 105a is formed of a high reflectance layer, and the low reflectance region 105b is formed of a high reflectance layer. The reflectance region 105b is formed of a low reflectance layer. There is no low reflectance layer between the low reflectance layer and the second substrate 102. There is no high reflectance layer between the low reflectance layer of 5b and the second substrate 102.

[0084] As the form of high reflectivity region and low reflectivity region, high reflectivity in the scanning direction of the energy beam The length of the low reflectance region is 150 μm, and the length of the high reflectance region is 50 μm. The length of the high reflectance region is 75 μm and the length of the low reflectance region is 5 μm. An example of a configuration in which the length of the region is 50 μm and the length of the low reflectance region is 1 μm can be given. do.

[0085] <High reflectance layer and low reflectance layer> The high reflectance layer provided on the first substrate 101 reflects energy rays. The high reflectance layer and the low reflectance layer are selected so that the reflectance of the high reflectance layer is higher than that of the low reflectance layer.

[0086] The high or low reflectivity layer may be made of a metal, alloy, metal nitride, metal oxide, semiconductor, or insulator. A layer including the above may be used as a single layer or a laminate.

[0087] Specific examples of metals or alloys include aluminum, copper, chromium, tantalum, titanium, molybdenum, and the like. Examples of the metal include those containing an element selected from the group consisting of tungsten, isobene, and tungsten.

[0088] In addition, alloys containing aluminum are not only highly conductive but also highly reflective. Alloys containing lanthanum include aluminum containing nickel, aluminum containing lanthanum and nickel, For example, aluminum containing silicon can be used.

[0089] Specific examples of metal nitrides include titanium nitride, molybdenum nitride, and tungsten nitride. Can be obtained.

[0090] As a laminated material applicable to the high reflectance layer or the low reflectance layer, A high melting point metal or the above-mentioned metal nitride may be laminated on one or both of the layers. The high melting point metals are specifically chromium, tantalum, titanium, molybdenum, tungsten, etc. Stainless steel, neodymium, scandium, yttrium, etc. Aluminum and copper By laminating it on either the bottom or top or both sides, the heat resistance and Problems caused by corrosiveness can be avoided.

[0091] The high reflectivity layer is made up of a laminate of a tantalum nitride layer and a tungsten layer. A 600 nm thick aluminum layer was placed between a 0 nm thick titanium layer and a 200 nm thick titanium layer. One example is a stacked laminate.

[0092] The semiconductor material may be, for example, a metal silicide or a conductive metal oxide. Specific examples of conductive metal oxides include indium oxide, tin oxide, and indium-tin oxide. Oxide (also known as ITO), Indium-Zinc Oxide, Zinc Oxide, Gallium or Aluminum Zinc oxide with added nium or these metal oxides with added silicon oxide can be used.

[0093] Examples of the insulator include silicon oxide, silicon oxynitride, aluminum oxide, and acrylic. resin, polyimide resin, benzocyclobutene resin, polyamide resin, epoxy resin, silicone resin An insulator selected from the group consisting of siloxane-based resin, SOG, polysilazane-based SOG, etc. The above-mentioned formula (I) may be used.

[0094] <Sealed object> The object to be sealed 110 may include various elements (for example, electronic elements, light-emitting elements, circuit elements, memory elements, etc.). The following elements can be applied:

[0095] In addition, a part of the sealed body 110 serves as a high reflectance layer or a low reflectance layer. The connection terminal of the body 110 may also serve as the high reflectance layer. In this case, the coil may also serve as the high reflectance layer. The sealed body 110 can be electrically connected to the outside of the sealed body through the metal layer. It is possible to provide an encapsulant with a reduced external size. Alternatively, it is possible to provide a circuit and an electrical circuit outside the encapsulant. Various elements that can be connected dynamically (e.g., electronic elements, light-emitting elements, circuit elements, memory elements, It is possible to provide a sealed body using a semiconductor device (such as a semiconductor device with a semiconductor integrated circuit, ... etc.) as the sealed body.

[0096] Note that a sealed object 110 may be provided on the first substrate 101, or a part of the sealed object 110 may be formed in advance. may be connected to another part formed on the first substrate 101 to form the body to be sealed 110.

[0097] <Sealing material> The sealing material 131 surrounds the sealed object 110 and is disposed between the first substrate 101 and the second substrate 102. In other words, the sealing material 131 is fused to the first substrate 101 and the second substrate 102. The substrates 102 are bonded together to seal the sealed object 110 therebetween.

[0098] The sealing material 131 is in a layer shape. Also, it absorbs the irradiated energy rays. The thickness can be about 7 μm, for example. The process in which the energy rays pass from the second substrate side through the sealing material 131 to the high reflectivity layer. In each of the processes in which the energy ray reflected by the high reflectance layer passes through the sealing material 131 again, It is preferable that the absorption and thickness are adjusted so that the absorption is achieved at the desired wavelength. As a result, the sealing material 131 can be heated uniformly in the depth direction. It is possible to provide a sealing body having excellent properties.

[0099] The sealing material 131 has a gas barrier property. In the case where a light-emitting element having a layer containing Transmittance 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 ·day or less This is preferable because it is possible to improve the reliability of the light-emitting module in which the light-emitting element is sealed. In general, inorganic materials have a lower density than organic materials. It is suitable as a sealing material because it has a high viscosity, a low diffusion rate of substances, and excellent gas barrier properties.

[0100] The sealing material 131 has thermal melting properties. The sealing material 131 is heated by energy rays in the sealing process. The temperature reached by the step 31 is given to the sealed body 110, the first substrate 101 or the second substrate 102. In order to reduce damage, the temperature that the sealing material 131 reaches is set to 800° C. or less, preferably 600° C. The temperature required for the sealing process is controlled to the following range, and a structure that can be fused at that temperature is selected and used. The temperature of the sealing material 131 must exceed, for example, its softening point. For example, some have a softening point of 400°C or higher.

[0101] For example, the first substrate 101 or the second substrate 102 is heated at a temperature of 400° C. or more and 600° C. or less. It is preferable that the material is fusible. If the material is fusible at 400°C or less, it will be difficult to use the material at room temperature. If fusion is possible at temperatures above 600°C, the object to be sealed will be damaged by heat.

[0102] The sealing material 131 may contain an energy ray absorbing material. For example, when using a semiconductor laser, the absorption As the material, a black pigment or the like can be dispersed in the sealing material 131 and used.

[0103] Examples of materials that can be used for the sealing material 131 include low-melting-point glass and solder. Specific examples of low melting point glass include lead-based glass, bismuth-based glass, vanadium-based glass, and Among these materials, for example, those with a temperature range of 350°C to 500°C It is possible to select a low melting point glass that can be sealed at a certain temperature.

[0104] <Modification> A sealing body exemplified as a modified example of this embodiment will be described with reference to FIG. The encapsulant 100 shown in the example has a configuration of a high reflectance region 105a and a low reflectance region 105b. Except for the above, the sealing body 100 has the same configuration as that of the sealing body 100 illustrated in FIG. The configurations of the region 105a and the low reflectance region 105b will be described in detail. The explanation given for FIG. 1 is to be used for the explanation of this embodiment.

[0105] The sealing body 100 illustrated in the modification of this embodiment has a high reflectance region 105a and a low reflectance region 105 b extends along the sealing material 131 .

[0106] For example, a metal layer is applied to the high reflectivity layer and is arranged in a spiral shape over the encapsulant 131 to form a high reflectivity layer. An emissivity region 105a can be formed.

[0107] The metal layer arranged in a spiral shape can be the coil of the sealed body 110. For example, a coil is provided overlapping the sealing material along the outer periphery of the sealing body, and a wire is connected to the coil. The object to be sealed 110 having the integrated circuit is sealed to provide an RFID (Radio Frequency Identification) device. It is possible to configure an encapsulant 100 that can be applied to an Ncy Identification (Ncy) tag.

[0108] The functions and effects of the configuration of the sealing body exemplified in the modification of this embodiment will be described below with reference to the second base. Let us take as an example an encapsulation body that is produced by scanning and irradiating an energy beam along the encapsulation material from the plate side. Reveal.

[0109] If there is a distribution in the integrated intensity in the direction perpendicular to the scanning direction of the energy beam, the sealing material 1 31 cannot be heated uniformly, which may result in poor sealing. If the low reflectance region 105a and the low reflectance region 105b are provided according to the integrated intensity of the energy beam, The fabric can be adjusted, and the sealing material 131 can be uniformly heated. The high reflectance region 105a is located in the area where the integrated intensity of the energy beam is low, and the low reflectance region is located in the area where the integrated intensity of the energy beam is high. This allows the distribution of the integrated intensity of the energy beam to be corrected. As a result, a uniformly sealed and highly reliable sealed body can be provided.

[0110] For example, a laser beam having a circular shape projected onto an irradiation surface is used as the energy beam. When irradiating from the plate side while scanning along the sealing material 131, In some cases, the integrated intensity of the laser beam may be distributed (see Figure 2(C)). can be explained as follows:

[0111] If we divide a circular laser beam spot into strips along the scanning direction, the central strip is The longest is approximately equal to the diameter of the laser beam spot. The closer to the edge of the beam spot, the shorter the strips become. When the pot is scanned, the longest area that the strip containing the center of the laser beam spot passes through is The laser beam is irradiated for a certain period of time. The shorter the strip, the shorter the laser beam irradiation time. In some cases, the integrated intensity of the laser beam may be distributed in the direction. If such a distribution occurs, the sealing material 131 cannot be uniformly heated, and sealing failure may occur. There is a match.

[0112] In addition, a distribution occurs in the integrated intensity of the laser beam in a direction perpendicular to the scanning direction. This phenomenon can occur even if the laser beam spot is rectangular or linear. This can occur when the integrated energy intensity at the edges is lower than that at the center.

[0113] The sealing body exemplified in the modification of this embodiment changes depending on the integrated intensity of the irradiated energy rays. 2C, a high reflectance region 105a and a low reflectance region 105b are provided. Specifically, the area where the cumulative intensity of the irradiated energy beam is small (for example, the laser beam The high reflectance area 105a at the end of the pot has a large integrated intensity of the irradiated energy rays. A low reflectance region 105b is provided in a portion (for example, the center of the laser beam spot). By adopting such a configuration, the portion through which the end of the laser beam passes (in other words, In the portion where the laser beam irradiation time is short, the laser beam is incident on the sealing material 131 from the second substrate 102 side. Since not only the light incident on the sealing material 131 but also the light reflected by the high reflectance region 105a is irradiated onto the sealing material 131, This allows the distribution of the integrated strength to be corrected. As a result, the size of the outer shape is reduced and uniform sealing is achieved. It is possible to provide a highly reliable sealing body having the above-mentioned properties.

[0114] In addition, a high reflectance region 105a and a low reflectance region 105b are provided along the sealing material 131. Therefore, the intensity of the energy ray reflected by the high reflectance region 105a toward the sealing material 131 is It is stable and there is no need to change conditions such as the irradiation intensity of the energy beam depending on the configuration of the scanning part. As a result, a highly reliable sealed body that is uniformly sealed can be provided. The irradiation device can be simplified.

[0115] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0116] (Embodiment 2) In this embodiment, a structure of a light-emitting module according to one embodiment of the present invention will be described. A first substrate, a second substrate that transmits energy rays, and a sealing material between the first substrate and the second substrate. a sealing material that surrounds a sealing body and a body to be sealed and bonds the first substrate and the second substrate to each other; A light-emitting organic compound is provided between a first electrode and a second electrode as a sealed body. In particular, the first substrate is a light-emitting module in which a light-emitting element having a layer containing an energy A high reflectivity region that reflects part of the energy rays, and a high reflectivity region for the energy rays. The low reflectance regions are alternately provided at positions overlapping the encapsulant. The low melting point glass layer absorbs some of the energy radiation.

[0117] The light emitting module exemplified in this embodiment is not susceptible to loss of reliability due to the diffusion of impurities in the atmosphere. Even light-emitting devices that are not heat-resistant enough to withstand the high-temperature sealing process can be easily damaged by heat. As a result, a uniformly sealed and highly reliable light emitting module can be provided. It is possible to provide a light-emitting module in which light-emitting elements with low heat resistance are sealed without being damaged. Can be provided.

[0118] The structure of a light-emitting module exemplified in this embodiment will be described with reference to FIG.

[0119] FIG. 3(A) is a top view of a light-emitting module according to one embodiment of the present invention, and FIG. 3(B) is a top view of a light-emitting module according to one embodiment of the present invention. FIG. 3(C) is a cross-sectional view taken along the line M1-M2-M3-M4 of FIG. 3(D) is a cross-sectional view taken along line M5-M6 of FIG. 3(C), and FIG.

[0120] The light-emitting module 200 illustrated in FIG. 3 includes a first substrate 201 and a light-emitting element that transmits energy rays. A second substrate 202, a light emitting element 210 between the first substrate 201 and the second substrate 202, and a light emitting element A sealing material 231 that surrounds the optical element 210 and bonds the first substrate 201 and the second substrate 202 together. The light-emitting element 210 has a first electrode 211, a second electrode 212, and a light-emitting element 213 therebetween. In particular, the first substrate 201 is provided with a layer 213 containing an organic compound having an energy ray. The high reflectivity region 205a reflects the energy ray. The high reflectivity region 20 5a and low reflectance areas 205b are provided at positions overlapping the sealing material 231. In addition, the sealing material 231 includes a low-melting-point glass layer that absorbs a portion of the energy rays.

[0121] The individual elements constituting the light emitting module exemplified in this embodiment will be described below. .

[0122] <First substrate and second substrate> The first substrate 201 and the second substrate 202 are each made of a material that can withstand the manufacturing process of the light emitting module. The thickness and size of the material should be as large as possible for the manufacturing equipment. There is no particular limitation. In addition, the structure may be a single layer structure or a laminate structure of two or more layers. Good too.

[0123] The first substrate 201 and the second substrate 202 have gas barrier properties. A gas barrier is provided between the first substrate 201 and the second substrate 202 and the light emitting element 210. The degree of gas barrier property is determined by the degree of reliability of the substrate due to the diffusion of impurities. It is only necessary to design it according to the characteristics of the light emitting element 210 that is to be damaged.

[0124] For example, a light-emitting element 210 having a layer 213 containing a light-emitting organic compound between a pair of electrodes. In this case, the gas barrier property is 10 -5 g / m 2 ·Day or less, preferably is 10 -6 g / m 2 The first substrate 2 having this level of gas barrier property is Between the first substrate 201 and the second substrate 202, a layer 21 containing a light-emitting organic compound is disposed between a pair of electrodes. By sealing the light emitting element 210 having the light emitting element 213, a highly reliable light emitting module 2 00 can be provided.

[0125] At least one of the pair of electrodes of the light-emitting element 210 is a layer 2 containing a light-emitting organic compound. 13 transmits light emitted by the first substrate 201 or the second substrate 202. The light-emitting element 210 has a region that transmits the light emitted by the light-emitting element 210. If a transparent region is provided at a position overlapping with the light emitting element 210, the light can be extracted efficiently. Therefore, it is preferable.

[0126] In addition, the first substrate 201 and the second substrate 202 are flexible enough not to destroy the sealing material 231. The substrate may be flexible. The substrate having flexibility is, for example, a substrate having a thickness of 50 μm or more. Thin glass or metal foil with a thickness of less than 0 μm can be used.

[0127] The first substrate 201 may be a substrate using an inorganic material or a composite material of an organic material and an inorganic material. The substrate using an inorganic material may be, for example, a glass substrate or a ceramic substrate. Examples of substrates using composite materials of organic and inorganic materials include glass substrates and metal substrates. For example, laminates of resin substrates and inorganic materials, FRP (Fiberglass-Reinforced Plastics) ced Plastics), prepregs, etc.

[0128] The second substrate 202 may be made of an inorganic material like the first substrate 201, or an organic material. The second substrate 202 may be a substrate using a composite material of an inorganic material. The region through which the ray passes is provided at a position overlapping with the sealing material 231. The energy rays that can be used are those described in the first embodiment. A detailed explanation will be omitted.

[0129] The second substrate 202 to which the laser beam can be applied is a substrate that transmits the laser beam. For example, when a visible laser beam is used and an inorganic material is used for the second substrate 202, The substrate 202 may be, for example, a non-alkali glass substrate, a barium borosilicate glass substrate, An aluminoborosilicate glass substrate, a quartz substrate, a sapphire substrate, or the like can be used.

[0130] <High reflectance area and low reflectance area> The high reflectance region 205a is a region where light is incident from the second substrate 202 side, rather than the low reflectance region 205b. The reflectance to the energy beam is high. The high reflectance region 205a is formed by the high reflectance layer 206a. The low reflectance region 205b is formed of a low reflectance layer 206b. A low reflectance layer 206b is provided between the high reflectance layer 206a in the region 205a and the second substrate 202. Between the low reflectance layer 206b in the low reflectance region 205b and the second substrate 202 In this case, the high reflectance layer 206a is not provided.

[0131] The configuration of the high reflectance region 205a and the low reflectance region 205b is illustrated in FIG. In the example shown in FIG. 1, the first substrate 201 also serves as a low reflectance layer, and a high reflectance layer 206 is provided thereon. The high reflectance layer 206a is formed in an island shape. a, and the portion where the high reflectance layer 206a is not formed becomes the low reflectance region 205b. A modified example of FIG. 3C is shown in FIG. 3D. The configuration shown in FIG. 3D is a first substrate 20 A high reflectance layer 206a is formed on the substrate 1, and a low reflectance layer 206b is formed in an island shape on the high reflectance layer 206a. The portion where the low reflectance layer 206b is formed becomes the low reflectance region 205b, and the low reflectance layer The portion where 206b is not formed becomes the high reflectance region 205a.

[0132] As another configuration, although not shown, an island-shaped or striped high reflectance layer 20 on the first substrate 201 may be provided. Alternatively, the low reflectance layer 206a and the island-like or striped low reflectance layer 206b may be provided alternately. A layer that transmits energy rays and is easily fused to the sealing material 231 is provided on the high reflectance layer 206a. As a layer to which the sealing material 231 is easily fused, a material having high affinity with the material used for the sealing material 231 is preferably used. For example, when the sealing material 231 is a low-melting-point glass, the layer containing silicon oxide is This is preferable.

[0133] The sealing material 231 provided on the high reflectance layer 206a or the low reflectance layer 206b is a first substrate. The plate 201 is fused to the second substrate 202. The first substrate 201 and the sealing material 231 are fused to the second substrate 202. To increase the strength of the fusion, an anchor layer may be provided. The anchor layer is the high reflectivity layer 206a. and the sealing material 231 so as to be in contact with both the low reflectance layer 206b and the sealing material 231. Alternatively, the high reflectance region 20 may be provided between the sealing material 231 so as to be in contact with both of the sealing materials 231. An anchor layer is provided between the low reflectance region 205a and the low reflectance region 205b in an island or stripe shape to increase the fusion strength. You can also do so.

[0134] <High reflectance layer and low reflectance layer> The high reflectance layer 206a or the low reflectance layer 206b of the light emitting module 200 illustrated in this embodiment For 06b, the same material as the high reflectance layer or low reflectance layer described in the first embodiment is used. It is possible.

[0135] <Sealed object> The light emitting module 200 illustrated in this embodiment has a light emitting element 210 as a sealed object. The object to be sealed includes a first connection terminal 203 electrically connected to the first electrode 211, The second electrode 212 and the second connection terminal 204 are electrically connected to each other.

[0136] The light-emitting element 210 includes a light-emitting organic compound between a first electrode 211 and a second electrode 212. A voltage is applied to the first electrode 211 and the second electrode 212 of the light emitting element 210. When a light-emitting layer 213 containing a light-emitting organic compound is applied, the layer 213 emits light. At least one of the electrodes 212 is transparent to light emitted from the layer 213 containing a light-emitting organic compound. The light emitting element 210 further includes a partition wall 214. The partition wall 214 is insulating. The light emission of 210 can be divided into a plurality of parts (for example, two rows and six columns in FIG. 3). The configuration of the optical element 210 will be described in detail in the fifth embodiment.

[0137] The light-emitting module 200 illustrated in this embodiment includes a high-reflectance layer 206a, a first electrode 21, and a 1. The first connection terminal 203 and the second connection terminal 204 include a layer formed in the same process. In other words, the high reflectivity layer 206a, the first electrode 211, the first connection terminal 203, and The two connection terminals 204 are connected to the energy beam and the layer 213 containing the luminescent organic compound. It reflects light.

[0138] The first electrode 211 includes a conductive material and may have a single-layer structure or a laminated structure of two or more layers. In addition, the thickness of the film is not particularly limited.

[0139] The conductive material may be any material that is conductive and can withstand the manufacturing process. For example, molybdenum, Titanium, Tantalum, Tungsten, Aluminum, Silver, Copper, Chromium, Neodymium, Scandium A metal selected from the group consisting of aluminum, etc., or an alloy containing one selected from these metals can be used. Cut.

[0140] Alloys containing aluminum include aluminum-nickel-lanthanum alloys, aluminum Examples of the alloy include aluminum-titanium alloy, aluminum-neodymium alloy, etc. Examples of the alloy include a silver-neodymium alloy and a magnesium-silver alloy. , gold, and alloys containing copper can be used.

[0141] The conductive material may be a metal nitride, such as titanium nitride or molybdenum nitride. , tungsten nitride, etc. are examples.

[0142] The conductive material may be a conductive metal oxide. Specifically, indium oxide, oxide Tin oxide, indium tin oxide (also known as ITO), indium zinc oxide, zinc oxide Zinc oxide doped with lead, gallium or aluminium, or oxides of these metals with acid It is possible to use one containing silicon hydride.

[0143] In this embodiment, the first electrode 211 is a layer containing an aluminum-nickel-lanthanum alloy. A layer containing titanium is laminated on the aluminum-nickel-lanthanum alloy. The titanium-containing layer is suitable for the first electrode 211 because of its high reflectivity. This can suppress the formation of a highly resistive oxide film on the surface of the light emitting element. Losses in the intensity of the emitted light and power losses due to electrical resistance can be reduced.

[0144] The second electrode 212 of the light-emitting module 200 exemplified in this embodiment is made of a light-emitting material. The layer 213 containing the organic compound transmits the emitted light.

[0145] The second electrode 212 can be made of a conductive metal oxide. Specific examples of conductive metal oxides include indium oxide, tin oxide, indium oxide, and tin oxide. Indium-Tin Oxide (also known as ITO), Indium-Zinc Oxide, Zinc Oxide, Gallium or is zinc oxide with added aluminum, or these metal oxides with silicon oxide The above-mentioned can be used.

[0146] Also, a metal layer, preferably a thin layer, which is thin enough to transmit the light emitted by the layer 213 containing a light-emitting organic compound is used. Alternatively, a metal layer having a thickness of 5 nm or more and 30 nm or less can be used.

[0147] Examples of metals that can be used for the second electrode 212 include noble metals, rare earth metals, and aluminum. Potassium metals, alkaline earth metals, specifically silver, gold, ytterbium, erbium, calcium Examples of the metals include sodium, magnesium, and aluminum. Alloys containing silver, specifically silver-neodymium alloys, magnesium-silver alloys, aluminum-nickel alloys, etc. Nickel-lanthanum alloy, aluminum-titanium alloy, aluminum-neodymium alloy, etc. It can be done.

[0148] <Modification> The light emitting module exemplified in the modification of this embodiment is similar to the light emitting module 200 described above. The present invention has a light-emitting element having a layer containing a light-emitting organic compound between a first electrode and a second electrode. However, unlike the above-mentioned light-emitting module 200, the first electrode on the first substrate side is The conductive layer transmits light emitted by the layer containing a conductive organic compound.

[0149] In addition, the light emitting module exemplified in the modified example of the present embodiment includes a low reflectance layer and a first electrode. In other words, the low reflectivity layer and the first electrode are formed in the same process. This structure allows the transmission of light emitted by the layer containing γ rays and a light-emitting organic compound. Since the layer is conductive, it can be used for wiring. As a result, unlike the high reflectivity layer, It is possible to provide wiring for a potential. Or, it can be used as wiring to support the high reflectance layer. can be done.

[0150] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0151] (Embodiment 3) In this embodiment, a manufacturing method of the sealed structure according to one embodiment of the present invention illustrated in Embodiment 1 will be described. Specifically, it has a first step and a second step.

[0152] The first step is to create a high reflectivity region on one side that reflects part of the energy beam, and a low reflectivity region on the other side that reflects the energy beam. a first substrate having a low reflectance region in which the reflectance to the y-ray is lower than that of the high reflectance region; A second substrate that transmits energy rays, a sealed body, and a high reflectance insulating film that surrounds the sealed body. A low-melting-point glass layer that absorbs part of the energy rays is included at the position where the low-reflectance area overlaps with the low-reflectance area. and a sealing material provided on one surface of the first substrate or one surface of the second substrate. This is the step.

[0153] In the second step, a sealant is provided between one surface of the first substrate and one surface of the second substrate. With the sealing material sandwiched between the first and second substrates, an energy beam is scanned along the sealing material from the other side of the second substrate. This is a step of sealing the object between the first substrate and the second substrate by irradiating the object with light.

[0154] According to the method for manufacturing the sealed structure exemplified in this embodiment, the second substrate is directed toward the high reflectance region. The part of the energy ray that was not absorbed by the encapsulant was reflected by the high reflectance area. As a result, the energy rays reach the sealing material from the first substrate side. This not only enables the sealing material to be heated uniformly in the thickness direction, but also makes it possible to heat the sealing material uniformly in the thickness direction.

[0155] In addition, the energy rays irradiated from the second substrate side toward the low reflectance region are absorbed by the sealing material. The part of the light that does not reach the low reflectance region reaches the low reflectance region. The reflectance of the low reflectance region is higher than that of the high reflectance region. Because the reflectance is low, energy is used to heat the encapsulant with reduced efficiency compared to areas that overlap with high reflectance areas. A wire is used so that the encapsulant does not heat up too much.

[0156] According to the method for manufacturing a sealed structure of one embodiment of the present invention, a high reflectance region and a low reflectance region are formed on the first substrate. Since the regions are alternately arranged at positions overlapping the sealing material, the ratio of the high reflectance region to the area of ​​the high reflectance region is low. The efficiency with which the energy rays heat the sealing material can be adjusted by adjusting the area ratio of the reflectance regions. As a result, a method for producing a uniformly sealed and highly reliable sealed body can be provided.

[0157] A manufacturing method of a sealed structure described in this embodiment will be described with reference to FIGS.

[0158] 4A to 4C are cross-sectional views illustrating a method for manufacturing a sealed structure according to one embodiment of the present invention.

[0159] <First step> In the first step exemplified in this embodiment, a first substrate, a second substrate, an object to be sealed, and Prepare a sealant (see FIG. 4(A)).

[0160] The first substrate 101 has a high reflectivity region on one side that reflects a part of the energy beam, and The reflectance of the light emitted from the substrate is lower than that of the high reflectance region. In the sealing body 100 exemplified in this embodiment, the second connection terminal 104 of the sealed body 110 is high. The first substrate 101 is provided in a reflectance region and serves as a part of a high reflectance region. It also serves as part of the rate area.

[0161] The first connection terminal 103, the second connection terminal 104 and the high reflectance region are formed on the first substrate 101. It is preferable to form the metal having a higher reflectivity against the energy ray. Specifically, the titanium layer and One method is to laminate three layers of aluminum and titanium and form them using a photolithography process. can be done.

[0162] In this embodiment, a substrate that transmits energy rays is prepared as the second substrate 102. When a light emitting module is manufactured by sealing a light emitting element in a sealing body, the sealing material must not overlap with the light emitting element. For this reason, a color filter or the like may be provided in advance.

[0163] The sealed object 110 is formed on the first substrate 101, and includes the first connection terminal 103 and the second The connection terminal 104 is electrically connected to the connection terminal 104. Alternatively, the sealed body 110 is separately prepared. In addition, the first connection terminal 103 and the second connection terminal 104 may be electrically connected to the stomach.

[0164] The sealing material 131 is formed in a position that surrounds the sealed object 110 and overlaps the high reflectance region and the low reflectance region. In this embodiment, the sealing material 131 is formed on one surface of the second substrate 102. The following description will be given of an example in which the first substrate 101 is prepared by forming the first electrode 104 on one side of the first substrate 101. Good too.

[0165] The sealing material 131 may be formed by, for example, screen printing or using a dispenser. A dispersion containing melting point glass powder, an organic resin, and a solvent is formed in a frame shape on one surface of a second substrate. Next, the organic resin and the solvent are removed by heating and baking to prepare the sealing material 131. do.

[0166] <Second step> In the second step exemplified in this embodiment, one surface of the first substrate 101 and one surface of the second substrate With the sealing material 131 sandwiched between the first and second surfaces of the plate 102, The energy beam is irradiated while scanning along the sealing material 131 (see FIG. 4(B)).

[0167] In this embodiment, a laser beam emitted by a semiconductor laser is used as the energy beam. The laser beam entering the sealing material 131 from the side in contact with the second substrate 102 will be described. A part of the bubble is absorbed into the sealing material 131, causing the temperature of the sealing material 131 to rise.

[0168] For example, a semiconductor laser with a wavelength of 940 nm and a beam diameter of 1.6 mm is used. It can be used with a scanning speed of 10 mm / sec at 1.5 W or with a power of 15 W. It can be used by scanning at a speed of 1 mm / sec.

[0169] The light that is not absorbed by the sealing material 131 and remains in the high reflectance area (for example, a part of the high reflectance area in FIG. 4B) The laser beam that reaches the second connection terminal 104) is reflected and exits from the first substrate 101 side. In this way, the encapsulant 131 overlapping the high reflectance region is efficiently It heats well.

[0170] On the other hand, the light that is not absorbed by the sealing material 131 and remains in the low reflectance area (for example, the low reflectance area in FIG. 4B) The laser beam reaches the first substrate 101, which also serves as a part of the substrate, and passes through the first substrate 101. In this way, the sealing material 131 overlapping the low reflectance region is lost. The area is heated with reduced efficiency compared to the overlapping area. This results in a uniform seal and reliability. This provides a method for manufacturing a highly efficient sealed structure (see FIG. 4(C)).

[0171] <Modification> In the method for producing a sealed structure exemplified in the modified example of this embodiment, the second substrate in the second step is The speed at which the energy beam is irradiated from the side along the sealing material while scanning is the surface of the high reflectance region. The ratio of the area of ​​the high reflectance region to the product is larger than the area of ​​the low reflectance region. This is a method for producing a fast encapsulation body in which the ratio of the area of ​​the low reflectance region is small.

[0172] According to this method, it is difficult to scan the shape ( For example, even if the encapsulant has a complex curved shape, the reflectance is small relative to the area of ​​the high reflectance region. By setting the ratio of the area of ​​the low reflectance region to a large value according to the scanning speed, excessive energy By irradiating it with energy rays, it can prevent the temperature from rising too high. The ratio of the area of ​​the low reflectance region to the area of ​​the high reflectance region is determined by the scanning speed. By making the opening smaller accordingly, it is possible to prevent the phenomenon of insufficient heating. In this way, a method for producing a uniformly sealed body with high reliability can be provided. This can reduce the time required.

[0173] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0174] (Embodiment 4) In this embodiment, a structure of a light-emitting panel which is one embodiment of a light-emitting module according to one embodiment of the present invention will be described. Specifically, the light-emitting panel exemplified in this embodiment includes a first substrate and an energy A second substrate through which the conductor line passes, a sealed body is disposed between the first substrate and the second substrate, and a sealing member is disposed around the sealed body. and a sealing material that bonds the first substrate and the second substrate together. As a stopper, a light-emitting element is provided having a layer containing a light-emitting organic compound between a first electrode and a second electrode. In particular, the first substrate is a light-emitting module in which a part of the energy rays is irradiated. A high reflectivity area that reflects energy rays and a low reflectivity area that has a lower reflectivity to energy rays than the high reflectivity area. The sealing material is provided at a position where the sealing material overlaps with the area where the energy rays are absorbed. It includes an absorbing low melting point glass layer.

[0175] The light-emitting panel exemplified in this embodiment is easily degraded in reliability due to the diffusion of impurities in the air. Even light-emitting devices that do not have the heat resistance to withstand the high-temperature sealing process are exposed to high temperatures. As a result, a highly reliable light-emitting panel that is uniformly sealed can be provided. It is possible to provide a light-emitting panel in which light-emitting elements with low heat resistance are sealed without being damaged.

[0176] The structure of a light-emitting panel exemplified in this embodiment will be described with reference to FIG. In the embodiment, an active matrix type light emitting device is used in which a light emitting element is connected to a transistor. Although an optical panel will be described as an example, one embodiment of the present invention is an active matrix light-emitting panel. The present invention is not limited to the above, but may be applied to a passive matrix type light emitting panel, a display device, or a lighting device. It is also applicable to optical devices.

[0177] <Active matrix type light-emitting panel> The structure of an active matrix light-emitting panel according to one embodiment of the present invention is shown in FIG. FIG. 5(A) is a top view of the light-emitting panel, and FIG. 5(B) is a cut view of FIG. 5(A) along lines AB and CD. FIG.

[0178] The active matrix type light emitting panel 1400 includes a driving circuit section (source side driving circuit) 14 01, pixel section 1402, driving circuit section (gate side driving circuit) 1403, second substrate 1404 The inside surrounded by the sealant 1405 is , it has become space.

[0179] The light-emitting panel 1400 is connected to an external input terminal, FPC (flexible printed circuit) 1 409 receives video signals, clock signals, start signals, reset signals, etc. Although only the FPC is shown here, the FPC also includes a printed wiring board (PWB) In the present specification, the light-emitting panel includes only the light-emitting panel body. This term also includes a state in which an FPC or PWB is attached to it.

[0180] Next, the structure of the light-emitting panel 1400 will be described with reference to the cross-sectional view shown in FIG. The light panel 1400 includes a source side driver circuit 1401 illustrated on a first substrate 1410. The pixel portion 1402 includes a driver circuit portion including the pixel shown in FIG. A line for transmitting signals input to the gate side driver circuit 1401 and the gate side driver circuit 1403. It is equipped with a routing wiring 1408.

[0181] In this embodiment, the source side driver circuit 1401 includes an n-channel transistor 1423 Regarding the configuration including a CMOS circuit combining a p-channel transistor 1424 However, the driving circuit is not limited to this configuration and may be various CMOS circuits, PMOS circuits, or In this embodiment, the driving circuit is formed on the substrate. Although the driver integrated type is shown, this is not necessarily required, and the driver circuit can be external rather than on the board. It can also be formed.

[0182] <Transistor structure> Various semiconductors can be used for the region in which the transistor channel is formed. Specifically, in addition to amorphous silicon, polysilicon, and single crystal silicon, A semiconductor material or the like can be used.

[0183] When a single crystal semiconductor is used for the channel formation region, the size of the transistor can be reduced. This allows for higher resolution pixels in the display area.

[0184] As the single crystal semiconductor constituting the semiconductor layer, a single crystal silicon substrate, a single crystal gate Single crystal semiconductors made of Group 14 elements, such as ruthenium substrates and single crystal silicon germanium substrates Semiconductors such as solid substrates and compound semiconductor substrates (SiC substrates, sapphire substrates, GaN substrates, etc.) A substrate having a single crystal semiconductor layer on an insulating surface is preferably used. (Silicon On Insulator) substrates can be used.

[0185] The method for producing SOI substrates is to implant oxygen ions into a mirror-polished wafer and then heat it at high temperatures. By this, an oxide layer is formed at a certain depth from the surface, and the chips in the surface layer are removed. A method for eliminating microvoids formed by hydrogen ion irradiation and a method for forming microvoids by heat treatment. A method of cleaving a semiconductor substrate by utilizing the length of the insulating film, or a method of growing a single crystal semiconductor layer on an insulating surface by crystal growth For example, a method for forming a film may be used.

[0186] In this embodiment mode, ions are added from one surface of a single crystal semiconductor substrate to form a single crystal semiconductor substrate. A weakened layer is formed at a certain depth from one surface of the plate, and the single crystal semiconductor substrate is An insulating layer is formed on either one of the first substrate 1410 and the single crystal semiconductor substrate. The substrates 1410 are stacked with an insulating layer in between, and a crack is generated in the weakened layer to form a single bond. A heat treatment is performed to separate the single crystal semiconductor substrate at the weakened layer, and a semiconductor layer is formed from the single crystal semiconductor substrate. A single crystal semiconductor layer is formed over a first substrate 1410. For example, a glass substrate can be used.

[0187] Also, an insulating isolation region is formed in the semiconductor substrate, and the insulating isolated semiconductor region is used to form a transistor. A transistor 1411 and a transistor 1412 may be formed.

[0188] By using a single crystal semiconductor as the channel formation region, Since the variation in electrical characteristics such as the threshold voltage of the transistor caused by the above problem can be reduced, the present invention The light-emitting panel of the present invention can operate normally without providing a circuit for compensating for the threshold voltage in each pixel. Therefore, the number of circuit elements in one pixel can be reduced. This allows for greater freedom in layout, making it possible to achieve higher resolution light-emitting panels. For example, a number of pixels arranged in a matrix can be arranged at 35 pixels per inch. 0 or more (horizontal resolution is 350 ppi (pixels per inch) or more ), and more preferably 400 or more (horizontal resolution of 400 ppi or more). It becomes possible to do so.

[0189] Furthermore, a transistor using a single crystal semiconductor for a channel formation region has a high current driving capability. By using these fine transistors, the display Since the area of ​​the circuitry that does not contribute to the display can be reduced, the display area of ​​the display unit is expanded. Moreover, a narrower frame for the light-emitting panel can be achieved.

[0190] <Pixel section configuration> The pixel portion 1402 includes a plurality of pixels. A current control transistor 1412 having a drain electrode connected to a first electrode 1413 of the transistor 18 and a switching transistor 1411.

[0191] A light emitting element 1418 provided in the light emitting panel has a first electrode 1413 and a second electrode 141. 7 and a layer 1416 containing a light-emitting organic compound. It is formed to cover the end of the electrode 1413 .

[0192] The light-emitting element 1418 may have the structure shown in the embodiment 5. can.

[0193] Specifically, a structure that emits white light is applied to the layer 1416 containing a light-emitting organic compound. can.

[0194] In addition, a microresonator is formed by using a first electrode 1413 and a second electrode 1417 of a light-emitting element 1418. For example, a light-emitting device (also called a microcavity) can be formed on the first electrode 1413. A conductive film that reflects light emitted from the layer 1416 containing an organic compound is used as the second electrode 1417. The device is configured using a semi-transmissive / semi-reflective conductive film that reflects part of the light and transmits part of it. Cut.

[0195] In addition, an optical adjustment layer can be provided between the first electrode and the second electrode. The optical distance between the reflective first electrode 1413 and the semi-transmissive and semi-reflective second electrode 1417 is adjusted. By adjusting the thickness of the optical adjustment layer, the light emitted from the second electrode 1417 can be selectively adjusted. The wavelength of the light extracted can be adjusted.

[0196] As a material that can be used for the optical adjustment layer, a layer containing a light-emitting organic compound can be applied. For example, the thickness of the charge generating region may be adjusted. When a region containing a substance and an acceptor substance is used for the optical adjustment layer, the optical adjustment layer has a thick structure. Even if there is a difference, it is preferable since the increase in the driving voltage can be suppressed.

[0197] Other materials that can be used for the optical adjustment layer include a layer 141 containing a light-emitting organic compound. A light-transmitting conductive film that transmits the light emitted by the light-transmitting element 6 can be applied. For example, a light-transmitting conductive film is applied to the surface of the light-transmitting conductive film. The first electrode 1413 can be formed by stacking the light-transmitting conductive films. This is preferable because it is easy to change the thickness of the optical adjustment layer of adjacent first electrodes.

[0198] The partition wall 1414 has a curved surface at the upper or lower end. The wall 1414 may be made of either a negative photosensitive resin or a positive photosensitive resin. For example, when a positive photosensitive acrylic is used as the material of the partition wall 1414, Only the upper end of the wall 1414 has a curved surface with a radius of curvature (0.2 μm to 3 μm). In this embodiment, a positive photosensitive polyimide film is used for the formation.

[0199] In addition, if the partition wall is made of a light-shielding material, the reflection of external light caused by a reflective film provided on the light-emitting panel can be suppressed. The reflective film extending outside the light emitting element 1418 reflects external light and reduces the brightness of the light emitting panel. The contrast is reduced, and vivid light emission cannot be obtained. In this case, a resin layer colored black may be used.

[0200] In addition, a color filter 1434 can be provided at a position overlapping with the light-emitting element 1418 . In addition, a light-shielding film 1435 (also called a black matrix) is provided between adjacent light-emitting elements. The color filter 1434 and the light-shielding film 143 can be provided on the wall. 5 can be provided on the second substrate 1404.

[0201] <Sealing structure> The light-emitting panel 1400 illustrated in this embodiment includes a first substrate 1410 and a second substrate 140. 4, and a structure for sealing a light emitting element 1418 in a space surrounded by a sealing material 1405. .

[0202] The encapsulant 1405 and the second substrate 1404 are resistant to impurities in the atmosphere (typically water and / or It is desirable that the material used be as impermeable as possible to oxygen (or other gases). Includes glass.

[0203] Materials that can be used for the second substrate 1404 include glass substrates, quartz substrates, and P VF (Polyvinyl fluoride), FRP (Fiberglass-Reinforced Examples of this include the PET bottleneck, which is a barrier to the manufacture of plastics.

[0204] In the light-emitting panel illustrated in FIG. 5B, the sealing material 1405 surrounding the light-emitting element 1418 is a first The sealing material 1405 is a material for bonding a substrate and a second substrate to each other. This prevents impurities that can impair reliability from penetrating into the interior of the light-emitting panel. As a result, This makes it possible to provide a light-emitting panel with a high light-emitting efficiency.

[0205] The sealing material 1405 is a spacer that maintains a distance between the first substrate 1410 and the second substrate 1404. The spacer 1445 separates the first substrate 1410 from the second substrate 1404. If filler or spherical spacers are dispersed in the sealing material 1405, the first substrate When the plate 1410 and the second substrate 1404 are bonded together, stress is applied to the filler and the spherical spacers. When the radiation concentrates and destroys the transistors and wiring formed on the first substrate underneath In the light-emitting panel exemplified in this embodiment, the spacer 1445 is disposed on the first substrate on the partition wall. In order to keep the gap between the plate 1410 and the second substrate 1404 constant, the wiring and transistors are destroyed. In particular, the partition wall acts as a buffer and has the effect of dispersing stress.

[0206] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0207] (Embodiment 5) In this embodiment, a structure of a light-emitting element that can be used for a light-emitting module according to one embodiment of the present invention will be described. Specifically, a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. An example of the light emitting element will be described with reference to FIG.

[0208] The light-emitting element exemplified in this embodiment has a first electrode, a second electrode, and a pair of electrodes A layer containing a light-emitting organic compound (hereinafter referred to as an EL layer) is provided between the first electrode or One of the first and second electrodes functions as an anode and the other as a cathode. The EL layer is disposed between the first and second electrodes, and the structure of the EL layer is appropriately selected according to the materials of the first and second electrodes. An example of the configuration of the light-emitting element is shown below. It goes without saying that there is no limitation.

[0209] <Light emitting element configuration example 1.> An example of the structure of a light-emitting element is shown in FIG. The EL layer is sandwiched between the cathode 1102 and the cathode 1102 .

[0210] When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, E Holes are injected into the L layer from the anode 1101 side, and electrons are injected from the cathode 1102 side. The injected electrons and holes recombine in the EL layer, causing the luminescent material contained in the EL layer to emit light. .

[0211] In this specification, a layer having one region where electrons and holes injected from both ends recombine is referred to as a layer having one region where electrons and holes recombine from both ends. Therefore, the light-emitting element in the configuration example 1 has one light-emitting unit. It can be said that we are prepared for this.

[0212] The light-emitting unit 1103 may include at least one light-emitting layer containing a light-emitting material. The light-emitting layer may be laminated with a layer other than the light-emitting layer. Substances with high hole injection properties, substances with high hole transport properties, substances with poor hole transport properties (blocking) Materials with high electron transport properties, materials with high electron injection properties, and materials with bipolar properties (electron and positive Examples of the layer include a layer containing a material having a high hole transport property.

[0213] An example of a specific configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 1113, a hole transport layer 1114, an emissive layer 1115, and an electron transport layer 1116. A transport layer 1116 and an electron injection layer 1117 are laminated in this order from the anode 1101 side. do.

[0214] <Light emitting element configuration example 2.> Another example of the configuration of the light-emitting element is shown in FIG. An EL layer including a light-emitting unit 1103 is sandwiched between the cathode 1101 and the cathode 1102. Additionally, an intermediate layer 1104 is provided between the cathode 1102 and the light-emitting unit 1103 . In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 2 includes the light-emitting element of the configuration example 1 described above. The same configuration as that of the light-emitting unit of the light-emitting device can be applied. Please refer to Example 1.

[0215] The intermediate layer 1104 is formed to include at least a charge generating region. For example, the first charge generating region 1104c may be laminated with a layer other than the charge generating region 1104a. The relay layer 1104b and the electron injection buffer 1104a are stacked in order from the cathode 1102 side. A layered structure can be applied.

[0216] The behavior of electrons and holes in the intermediate layer 1104 will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the first charge generating region 1104 and the second charge generating region 1105, the first charge generating region 1104 At c, holes and electrons are generated, the holes move to the cathode 1102, and the electrons move to the electron relay layer 1 The electron relay layer 1104b has high electron transport properties and moves to the first charge generation region 104b. The electrons generated in 1104c are quickly transferred to the electron injection buffer 1104a. The buffer 1104a reduces the barrier for injecting electrons into the light-emitting unit 1103, Therefore, the electron injection efficiency to the first charge generation region 1104c is increased. The electrons travel through the electron relay layer 1104b and the electron injection buffer 1104a to the light-emitting unit 1104b. The electrons are injected into the LUMO level of dot 1103.

[0217] The electron relay layer 1104b is formed by bonding the material constituting the first charge generating region 1104c to the electrons. The substances that make up the injection buffer 1104a react at the interface, damaging each other's functions. This can prevent interactions such as

[0218] The range of materials that can be used for the cathode of the light-emitting device of the second configuration example is as wide as that of the cathode of the first configuration example. The range of materials that can be used for the cathode of the second embodiment is wider than that of the intermediate cathode. This is because the layer only needs to receive the generated holes, and a material with a relatively large work function can be used. do.

[0219] <Light emitting element configuration example 3.> Another example of the configuration of the light-emitting element is shown in FIG. The EL layer has two light-emitting units between the cathode 1101 and the cathode 1102. In addition, an intermediate light emitting unit (1103a) is provided between the first light emitting unit (1103b) and the second light emitting unit (1103b). A layer 1104 is provided.

[0220] The number of light-emitting units provided between the anode and the cathode is not limited to two. The light emitting element shown in FIG. 11 has a structure in which a plurality of light emitting units 1103 are stacked, that is, a so-called tandem type light emitting element. However, for example, n layers (n is a natural number of 2 or more) are formed between an anode and a cathode. When the optical unit 1103 is provided, the mth (m is a natural number, 1 or more (n-1) or less) Between the light-emitting unit and the (m+1)th light-emitting unit, an intermediate layer 1104 is provided. The configuration will be as follows.

[0221] In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 3 includes the light-emitting element of the configuration example 1 described above. It is possible to apply a similar configuration to the intermediate layer 110 of the configuration example 3 of the light-emitting device. The same configuration as in the configuration example 2 of the light-emitting device described above can be applied to the light-emitting device 4. For this, the description of Configuration example 1 of the light-emitting element or Configuration example 2 of the light-emitting element can be referred to.

[0222] The behavior of electrons and holes in the intermediate layer 1104 provided between the light-emitting units will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, In the intermediate layer 1104, holes and electrons are generated, and the holes are guided to the light-emitting The electrons move to the light-emitting unit on the anode side. The holes injected into the light-emitting unit are recombined with the electrons injected from the cathode side, producing the light-emitting The luminescent material contained in the unit emits light. The injected electrons are recombined with holes injected from the anode side to form the light-emitting element contained in the light-emitting unit. The material emits light. Therefore, the holes and electrons generated in the intermediate layer 1104 are This leads to light emission in the light-emitting unit.

[0223] In addition, by providing the light-emitting units in contact with each other, the same structure as the intermediate layer is formed between them. In this case, the light-emitting units can be provided in contact with each other. When a charge generating region is formed on one surface, the charge generating region is a first charge generating region of the intermediate layer. Since it functions as a green area, the light-emitting units can be provided in contact with each other.

[0224] The light-emitting element configuration examples 1 to 3 can be used in combination with each other. For example, An intermediate layer can be provided between the cathode and the light-emitting unit in the third structural example of the light-emitting element.

[0225] <Materials that can be used in light-emitting devices> Next, specific materials that can be used in the light-emitting device having the above-mentioned configuration will be described. The cathode and EL layer will be described in that order.

[0226] <Materials that can be used for the anode> The anode 1101 is made of a conductive metal, alloy, electrically conductive compound, or a mixture of these. It is composed of a single layer or a laminate. In particular, it has a large work function (specifically, 4.0 eV or more). A configuration in which the material is in contact with the EL layer is preferred.

[0227] Examples of metal or alloy materials include gold (Au), platinum (Pt), and nickel (Ni). , Tungsten (W), Chromium (Cr), Molybdenum (Mo), Iron (Fe), Cobalt ( Metallic materials such as Co, copper (Cu), palladium (Pd), titanium (Ti), etc., or Examples of alloy materials include

[0228] Examples of the electrically conductive compound include oxides of metal materials, nitrides of metal materials, conductive polymers, and the like. Children are mentioned.

[0229] As a specific example of an oxide of a metal material, indium tin oxide (ITO) is n Oxide), indium-tin oxide containing silicon or silicon oxide, titanium-containing Indium-tin oxide, indium-titanium oxide, indium-tungstate Examples include indium zinc oxide, indium zinc oxide containing tungsten, etc. In addition, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, Examples of oxides include tantalum oxide, manganese oxide, and titanium oxide.

[0230] Films containing oxides of metal materials are usually formed by sputtering, but the sol-gel method For example, an indium-zinc oxide film can be fabricated by applying the techniques described above. Sputtering was performed using a target containing 1wt% to 20wt% zinc oxide. The ring method can be used to form the tungsten oxide and zinc oxide. The indium oxide film is made by mixing tungsten oxide with indium oxide at a ratio of 0.5wt% to 5wt%. %, and zinc oxide was used as a target containing 0.1wt% to 1wt%. It can be formed by the ring method.

[0231] Specific examples of nitrides of metal materials include titanium nitride and tantalum nitride.

[0232] As a specific example of a conductive polymer, poly(3,4-ethylenedioxythiophene) / poly(s Polyaniline / Poly(styrenesulfonic acid) (PEDOT / PSS), Polyaniline / Poly(styrenesulfonic acid) )(PAni / PSS) etc.

[0233] In addition, when a second charge generating region is provided in contact with the anode 1101, the magnitude of the work function is Various conductive materials can be used for the anode 1101 without considering the work function. Not only materials with a high work function but also materials with a low work function can be used. The materials constituting the raw region will be described below along with the first charge generating region.

[0234] <Materials that can be used for the cathode> The first charge generating region 1104c is in contact with the cathode 1102 and is disposed between the light emitting unit 1103 and the first charge generating region 1104b. When provided, the cathode 1102 can be made of various conductive materials regardless of the magnitude of the work function. can.

[0235] At least one of the cathode 1102 and the anode 1101 is made of a conductive material that transmits visible light. For example, the cathode 1102 or the anode 1101 is formed of a film that transmits visible light. When one side is formed using a conductive film that reflects visible light and the other side is formed using a conductive film that reflects visible light, In addition, a light emitting element that emits light on both the cathode 1102 and the anode 1101 can be formed. If the other side is formed using a conductive film that transmits visible light, a light-emitting element that emits light on both sides can be formed. Can be configured.

[0236] Examples of the conductive film that transmits visible light include indium-tin oxide, silicon, and silicon oxide. Indium-tin oxide containing an element, indium-tin oxide containing titanium, indium -titanium oxide, indium-tungsten oxide, indium-zinc oxide, indium-zinc oxide containing tungsten, etc. can be mentioned. Further, a metal thin film having a degree of light transmission (preferably, about 5 nm or more and 30 nm or less) can also be used.

[0237] As the conductive film that reflects visible light, for example, a metal can be used. Specifically, metal materials such as silver, aluminum , platinum, gold, copper, etc. or alloy materials containing these can be mentioned. Examples of alloys containing silver include silver-neodymium alloy, magnesium-silver alloy, etc. Aluminum Examples of alloys of aluminum include aluminum-nickel-lanthanum alloy, aluminum-titanium alloy, aluminum-neodymium alloy, etc.

[0238] <Materials that can be used for the EL layer> Regarding the materials that can be used for each layer constituting the above-described light-emitting unit 1103, specific examples are shown below.

[0239] The hole injection layer is a layer containing a substance with high hole injection property. Examples of substances with high hole injection property include , for example, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide , manganese oxide, etc. can be used. In addition, phthalocyanine (abbreviation: H2Pc) and phthalocyanine-based compounds such as copper phthalocyanine (abbreviation: CuPc), or poly(3 ,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS ) and other polymers can also form the hole injection layer.

[0240] The hole injection layer may be formed by using the second charge generation region. When the charge generation region is used, various conductive materials can be used for the anode 1101 without considering the work function. As described above, the material constituting the second charge generating region can be the same as that of the first charge generating region. This will be described later together with the charge generating region.

[0241] <Hole transport layer> The hole transport layer is a layer containing a substance having a high hole transporting property. The layer may be a laminate of two or more layers each containing a substance having a high hole transporting property. Any substance with a high -6 cm 2 A substance having a hole mobility of at least / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0242] As a material with high hole transport properties, aromatic amine compounds (e.g., 4,4'-bis[N-( 1-Naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD) and carbazole derivatives (e.g., 9-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl) CzPA) and other polymers. Compounds such as poly(N-vinylcarbazole) (abbreviation: PVK) can be used. Cut.

[0243] <Light-emitting layer> The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer is not limited to a single layer, but may be a layer having two layers containing a light-emitting substance. The light-emitting material may be a fluorescent compound or a phosphorescent compound. It is preferable to use a phosphorescent compound as the light-emitting substance because the light-emitting efficiency of the light-emitting element can be increased. stomach.

[0244] Fluorescent compounds (e.g., Coumarin 545T) and phosphorescent compounds (e.g., Tris(2-phenylpyridinato)iridium(III) (abbreviation: Ir(ppy)3) etc. can be used.

[0245] The light-emitting material is preferably dispersed in a host material. It is preferable that the electromotive energy is larger than the excitation energy of the luminescent material.

[0246] The host material can be a material having a high hole transporting property as described above (e.g., For example, aromatic amine compounds, carbazole derivatives, polymer compounds, etc.) Highly functionalized substances (e.g., metal complexes having a quinoline or benzoquinoline skeleton, oxazo Metal complexes having aryl or thiazole ligands, etc., can be used.

[0247] <Electron transport layer> The electron transport layer is a layer containing a substance having a high electron transporting property. The layer may be a laminate of two or more layers each containing a substance having a high electron transporting property. Any substance with a high -6 cm 2 A substance having an electron mobility of at least 1000 V / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0248] As a substance with high electron transport properties, metal complexes having a quinoline skeleton or a benzoquinoline skeleton are (e.g., tris(8-quinolinolato)aluminum (abbreviation: Alq)), oxazo Metal complexes with thiazole and thiazole ligands (e.g., bis[2-(2-hydroxyphenyl) Zinc(BOX2) (abbreviation: Zn(BOX)2)), other compounds (e.g. For example, bathophenanthroline (abbreviation: BPhen) can be mentioned. (e.g., poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridyl) PF-Py) and the like can be used.

[0249] <Electron injection layer> The electron injection layer is a layer containing a substance with high electron injection properties. The electron injection layer may be a layer including two or more layers each containing a substance having a high electron injection property. This increases the efficiency of electron injection from the cathode 1102, making it possible to reduce the driving voltage of the light-emitting element. This is preferable because

[0250] Materials with high electron injection properties include alkali metals (e.g., lithium (Li), cesium ( Cs), alkaline earth metals (e.g., calcium (Ca)), or compounds thereof ( For example, oxides (specifically, lithium oxide, etc.), carbonates (specifically, lithium carbonate and carbonate Cesium, etc.), halides (specifically lithium fluoride (LiF), cesium fluoride ( CsF), calcium fluoride (CaF2), etc.

[0251] In addition, a layer containing a substance with high electron injection properties is formed by stacking a layer containing a substance with high electron transport properties and a layer containing a donor substance ( Specifically, it may be formed of Alq containing magnesium (Mg). The mass ratio of the donor substance to the substance with high electron transport properties is 0.001 or more. A ratio of 0.1 or less is preferred.

[0252] The donor substance may be an alkali metal, an alkaline earth metal, a rare earth metal, or any of these. In addition to the above compounds, tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickel Organic compounds such as kerosene can also be used.

[0253] <Materials that can be used in the charge generation region> The first charge generation region 1104c and the second charge generation region are made of a material having a high hole transporting property. The charge generation region is a region containing a substance with high hole transport properties in the same film. In addition to the case where a layer containing a material with high hole transport properties and an acceptor material is used, However, the first charge generating region may be a layer including a material having an acceptor property. In the case of a laminated structure provided on the cathode side, a layer containing a material with high hole transport properties is in contact with the cathode 1102. In the case of a laminated structure in which the second charge generation region is provided on the anode side, the acceptor The layer containing the conductive material is in contact with the anode 1101 .

[0254] In addition, in the charge generation region, the mass ratio of the material with high hole transport properties to the material with high hole transport properties is 0.1 or more and 4. It is preferable to add the acceptor substance at a ratio of 0 or less.

[0255] Acceptor substances used in the charge generation region include transition metal oxides and elements in the periodic table. Examples of the oxides of metals belonging to Groups 4 to 8 include molybdenum oxide. Molybdenum oxide is particularly preferred. Molybdenum oxide has the characteristic of low hygroscopicity. .

[0256] In addition, examples of the material having a high hole transporting property used in the charge generating region include aromatic amine compounds, carbene compounds, and benzene compounds. Bazole derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers Various organic compounds such as 10 -6 cm 2 / Vs However, it is preferable that the material has a hole mobility of 100 or more. Any other substance may be used as long as it has a high resistance.

[0257] <Materials that can be used for the electronic relay layer> The electron relay layer 1104b is an acceptor material in the first charge generating region 1104c. Therefore, the electron relay layer 11 is a layer that can quickly receive the electrons that are extracted by the electron relay layer 11. 04b is a layer containing a substance with high electron transport properties, and its LUMO level is the first charge The acceptor level of the acceptor substance in the generation region 1104c and the electron relay The layer is located between the LUMO level of the adjacent light-emitting unit 1103. It is preferable to set the value to -5.0 eV or more and -3.0 eV or less.

[0258] The material used for the electron relay layer 1104b is a perylene derivative (e.g., 3,4,9, 10-Perylenetetracarboxylic dianhydride (abbreviation: PTCDA) and nitrogen-containing condensed aromatic Compounds (e.g., pyrazino[2,3-f][1,10]phenanthroline-2,3-dica Polybutene Nitride (abbreviation: PPDN) etc.

[0259] In addition, since the nitrogen-containing condensed aromatic compound is a stable compound, it is suitable for use in the electron relay layer 1104b. Furthermore, among nitrogen-containing condensed aromatic compounds, those containing cyano groups or fluoro groups are preferred. By using a compound having an electron-withdrawing group such as a group, the electron-relay layer 1104b This is preferred because it makes it easier for the aryl group to accept electrons.

[0260] <Materials that can be used as electron injection buffer> The electron injection buffer is a layer containing a substance with high electron injection properties. 1104a facilitates the injection of electrons from the first charge generating region 1104c to the light emitting unit 1103. The electron injection buffer 1104a is connected to the first charge generation region 1104c. By providing it between the optical units 1103, the injection barrier between them can be reduced.

[0261] The substance having high electron injection property is an alkali metal, an alkaline earth metal, a rare earth metal, or These compounds and the like are included.

[0262] In addition, a layer containing a substance with high electron injection properties is formed by dividing a layer containing a substance with high electron transport properties and a layer containing a donor substance. It may be formed.

[0263] <Method of manufacturing light-emitting element> One embodiment of a method for manufacturing a light-emitting element will be described. The EL layer is formed by combining the above-mentioned materials. The EL layer can be formed by various methods (e.g., drying) depending on the materials used. For example, a vacuum deposition method, a transfer method, a printing method, an inkjet method, etc. can be used. A method such as a jet method or a spin coating method may be selected and used. Also, different methods may be used for each layer. A second electrode is formed on the EL layer to complete a light-emitting element.

[0264] The light-emitting element shown in this embodiment can be manufactured by combining the above-mentioned materials. From this light-emitting element, light is emitted from the above-mentioned luminescent material, and the color of the emitted light is Selection can be made by changing the type of luminescent material.

[0265] In addition, by using multiple luminescent materials with different luminescent colors, the width of the emission spectrum can be expanded. In order to obtain white light emission, for example, a light-emitting material may be included. The composition has at least two layers each having a complementary color. The color of the light emitted by the LED can be expressed as the color of the light emitted by the LED. Alternatively, blue-green and red may be used.

[0266] Furthermore, to obtain white light with good color rendering, the emission spectrum must extend over the entire visible light range. For example, one light emitting element may have a layer that emits blue light, a layer that emits green light, and The light emitting layer may include a layer that emits red light and a layer that emits red light.

[0267] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0268] (Embodiment 6) In this embodiment, an electronic device according to one embodiment of the present invention will be described. An electronic device equipped with a light-emitting panel will be described with reference to FIG.

[0269] As an example of an electronic device to which a light-emitting device is applied, a television set (a television, (also called TV receivers), computer monitors, digital cameras, digital video digital cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), Examples include portable game machines, personal digital assistants, audio playback devices, and large game machines such as pachinko machines. Specific examples of these electronic devices are shown in Figure 7.

[0270] FIG. 7A shows an example of a television device. The television device 7100 is A display unit 7103 is built into the body 7101. The display unit 7103 displays images. It is possible to use a light-emitting device in the display portion 7103. 7, a housing 7101 is supported by a stand 7105.

[0271] The television device 7100 can be operated using an operation switch provided on the housing 7101 or a separate remote control. This can be done by the remote control operation device 7110. The channel and volume can be controlled by the 7109, and the display 7103 shows In addition, the remote control unit 7110 can control the video. A display unit 7107 for displaying information output from 7110 may be provided.

[0272] The television device 7100 includes a receiver and a modem. It can receive more general television broadcasts, and can also be connected to a modem via wired or wireless connection. By connecting to a network, communication can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0273] FIG. 7B shows a computer, which includes a main body 7201, a housing 7202, a display unit 7203, and a keyboard. It includes a board 7204, an external connection port 7205, a pointing device 7206, and the like. Note that the computer is manufactured using a light-emitting device for its display portion 7203.

[0274] FIG. 7C shows a portable game machine that is composed of two housings, a housing 7301 and a housing 7302. The housing 7301 is connected to the display unit 7302 by a connection part 7303 so as to be openable and closable. 304 is incorporated in the housing 7302, and a display unit 7305 is incorporated in the housing 7302. The portable gaming machine shown in (C) also has a speaker unit 7306, a recording medium insertion unit 7307, LED lamp 7308, input means (operation keys 7309, connection terminal 7310, sensor 731 1 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry Material, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, Equipped with a microphone 7312) and other equipment, including a function to measure odor or infrared rays Of course, the configuration of the portable gaming machine is not limited to the above, and at least the display unit 73 A light-emitting device may be used for both the display portion 7304 and the display portion 7305, or for either one of them. The portable gaming machine shown in FIG. 7(C) is configured as follows: The function of reading out the programs or data recorded on the recording media and displaying them on the display unit, It has a function to share information with other portable game machines by wireless communication. The functions of the portable gaming machine shown are not limited to those described above, and the portable gaming machine may have a variety of functions.

[0275] FIG. 7D shows an example of a mobile phone. A mobile phone 7400 is attached to a housing 7401. In addition to the built-in display unit 7402, operation buttons 7403, external connection port 7404, The mobile phone 7400 is equipped with a light emitting device, a microphone 7406, and the like. The display portion 7402 is fabricated by using the same.

[0276] In a mobile phone 7400 shown in FIG. 7D, information is displayed by touching a display portion 7402 with a finger or the like. You can also make a call or write an email by This can be done by touching the display portion 7402 with a finger or the like.

[0277] The screen of the display unit 7402 has three main modes. The first is a display mode that is mainly used for displaying images. The first mode is a display mode, the second is an input mode for inputting information such as characters, and the third mode is a display mode. This is a display + input mode that combines the display mode and the input mode.

[0278] For example, when making a call or composing an e-mail, the display unit 7402 is used to input characters. The main character input mode is to input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402. I wish.

[0279] In addition, a sensor for detecting the inclination such as a gyro or an acceleration sensor is installed inside the mobile phone 7400. By providing a detection device having the above configuration, the orientation of the mobile phone 7400 (vertical or horizontal) can be determined and the display The screen display of the display unit 7402 can be automatically switched.

[0280] In addition, the screen mode can be changed by touching the display portion 7402 or by operating the housing 7401. The type of image displayed on the display unit 7402 can be selected by operating the operation button 7403. For example, the image signal to be displayed on the display unit may be changed by If the data is text data, the mode switches to input mode.

[0281] In the input mode, the optical sensor of the display unit 7402 detects a signal and displays If there is no input by touch operation of the part 7402 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0282] The display portion 7402 can also function as an image sensor. By touching the palm or fingers of the user on the sensor 02 and capturing an image of the palm print or fingerprint, the user can be authenticated. In addition, a backlight that emits near-infrared light to the display unit or a sensing light that emits near-infrared light By using a source, it is also possible to image finger veins, palm veins, etc.

[0283] FIG. 7(E) shows an example of a foldable computer. The computer 7450 includes a housing 7451L and a housing 7451R connected by a hinge 7454. In addition, the operation button 7453, the left speaker 7455L and the right speaker 745 In addition to the 5R, the computer 7450 has an external connection port 7456 (not shown) on the side thereof. In addition, a display unit 7452L provided in the housing 7451L and a display unit 7452R provided in the housing 7451R are provided. When the hinge 7454 is folded so that the display units 7452R and 7453 face each other, It can be protected by a housing.

[0284] The display unit 7452L and the display unit 7452R not only display images, but also input information when touched with a finger or the like. For example, you can touch an icon representing an installed program to select it, You can start a program. Or, you can change the distance between two points on the displayed image with your fingers. You can zoom in or out on an image, or move your finger over a part of the displayed image to zoom in or out. You can also display a keyboard image and use your fingers to type the letters and symbols you want to type. You can also select and enter information.

[0285] In addition, the computer 7450 is equipped with a gyro, an acceleration sensor, and a GPS (Global Positioning System). The device is equipped with a GPS receiver, fingerprint sensor, and video camera. For example, a detection device having a sensor for detecting the inclination, such as a gyro or an acceleration sensor, By providing this, the orientation of the computer 7450 (portrait or landscape) can be determined and the screen to be displayed can be adjusted. You can have it switch orientation automatically.

[0286] The computer 7450 can also be connected to a network. In addition to being able to display information on the Internet, it can also remotely control other electronic devices connected to the network. It can be used as a terminal to operate.

[0287] 7F shows an example of a lighting device. A lighting device 7500 includes a light source in a housing 7501. The light-emitting device 7503a, the light-emitting device 7503b, and the light-emitting device 7503c according to one embodiment of the present invention are The lighting device 7500 is attached to a ceiling, a wall, etc. It is possible.

[0288] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. . [Explanation of symbols]

[0289] 100 Sealed body 101 First substrate 102 Second substrate 103 first connection terminal 104 Second connection terminal 105a High reflectance area 105b Low reflectance area 110 Encapsulated object 131 Encapsulating materials 200 Light Emitting Module 201 First Substrate 202 Second Substrate 203 First connection terminal 204 Second connection terminal 205a High reflectance area 205b Low reflectance area 206a High reflectance layer 206b Low reflectance layer 210 Light emitting element 211 First electrode 212 Second electrode 213 Layer containing luminescent organic compound 214 Bulkhead 231 Encapsulating materials 1101 Anode 1102 Cathode 1103 Light Emitting Unit 1103a Light Emitting Unit 1103b Light Emitting Unit 1104 Middle Class 1104a Electron injection buffer 1104b Electronic Relay Layer 1104c Charge generation region 1113 Hole injection layer 1114 Hole transport layer 1115 Light-emitting layer 1116 Electron transport layer 1117 Electron injection layer 1400 Light-emitting panel 1401 Source side driver circuit 1402 Pixel section 1403 Gate side drive circuit 1404 Second Board 1405 Sealing material 1408 Wiring 1410 First substrate 1411 Transistor 1412 Transistor 1413 First electrode 1414 Bulkhead 1416 Layer containing luminescent organic compound 1417 Second electrode 1418 Light emitting element 1423 n-channel transistor 1424 p-channel transistor 1434 Color Filter 1435 Membrane 1445 Spacer 7100 Television equipment 7101 Case 7103 Display section 7105 Stand 7107 Display section 7109 Operation key 7110 Remote control device 7201 Main unit 7202 Case 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing Device 7301 Case 7302 Case 7303 Connection section 7304 Display section 7305 Display section 7306 Speaker section 7307 Recording medium insertion section 7308 LED Lamp 7309 Operation key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike 7450 Computer 7451L Housing 7451R Housing 7452L Display 7452R Display section 7453 Operation button 7454 Hinge 7455L Left speaker 7455R Right speaker 7456 External connection port 7500 Lighting Equipment 7501 Case 7503a Light Emitting Device 7503b Light emitting device 7503c Light Emitting Device 7503d Light Emitting Device

Claims

[Claim 1] A first substrate; a second substrate that is transparent to the energy beam; a sealed body between the first substrate and the second substrate; a sealing material that surrounds the object to be sealed and bonds the first substrate and the second substrate together; the first substrate includes high reflectance regions that reflect a part of the energy beam and low reflectance regions that have a reflectance to the energy beam lower than that of the high reflectance regions, the high reflectance regions being arranged alternately at positions overlapping the sealing material; The sealing material is a sealing body including a low-melting-point glass layer that absorbs a portion of the energy rays.

Images