Substrate treatment apparatus

Abstract

To appropriately collect dust produced in treating a substrate by irradiating the substrate with a laser beam.SOLUTION: A substrate treatment apparatus for treating a substrate by irradiating the substrate with a laser beam, has a laser irradiation part which irradiates the substrate with the laser beam, and a dust collection part which collects dust. The dust collection part is provided with an accommodation part which accommodates at least a part of the laser irradiation part and in which the laser irradiation part can move.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a laser processing device. The laser processing device includes a laser light irradiating means having a condenser for laser processing a workpiece, and a dust exhaust means for collecting and exhausting dust generated by the irradiation of the laser light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-069249 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein appropriately collects dust generated when a substrate is processed by irradiating the substrate with laser light. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus that processes a substrate by irradiating the substrate with laser light, the apparatus having a laser irradiation unit that irradiates the substrate with the laser light and a dust collection unit that collects dust, the dust collection unit having a storage unit that houses at least a portion of the laser irradiation unit and allows the laser irradiation unit to move. Effect of the Invention

[0006] According to the present disclosure, when a substrate is processed by irradiating the substrate with laser light, dust generated can be appropriately collected. [Brief description of the drawings]

[0007] [Figure 1]FIG. 2 is a side view illustrating an example of an overlapping wafer being processed in a wafer processing system. [Diagram 2] 1 is a plan view illustrating a schematic configuration of a wafer processing system. [Diagram 3] 1A to 1C are explanatory views showing main steps of wafer processing. [Figure 4] FIG. 1 is a flow diagram showing main steps of wafer processing. [Diagram 5] FIG. 4 is an explanatory diagram showing the state of a peripheral modified layer formed inside a first wafer. [Figure 6] FIG. 2 is a plan view showing an outline of the configuration of the membrane treatment apparatus. [Figure 7] FIG. 2 is a side view showing an outline of the configuration of the membrane treatment apparatus. [Figure 8] FIG. 2 is a side view showing an outline of the configuration of the membrane treatment apparatus. [Figure 9] 4 is a cross-sectional perspective view showing an outline of the configuration of a laser irradiation unit and a part of an upper dust collecting unit. FIG. [Figure 10] FIG. 2 is a perspective view showing the outline of the configuration of an upper dust collecting section. [Figure 11] FIG. 2 is a cross-sectional perspective view showing the outline of the configuration of an upper dust collecting section. [Figure 12] 4 is a plan view showing an outline of the configuration of a portion of the upper dust collecting section. FIG. [Figure 13] 4 is a cross-sectional perspective view showing the outline of the configuration of a portion of the upper dust collecting section. FIG. [Figure 14] FIG. 4 is an explanatory diagram showing the flow of atmosphere in an upper dust collecting section. [Figure 15] FIG. 4 is an explanatory diagram showing the flow of atmosphere in an upper dust collecting section. [Figure 16] FIG. 4 is a side view showing the outline of the configuration of the lower dust collecting section. [Figure 17] FIG. 2 is a plan view showing an outline of the configuration of a lower dust collecting section. [Figure 18] FIG. 11 is an explanatory diagram showing a comparative example in which a lower dust collecting section is not provided. [Figure 19] FIG. 2 is a perspective view showing the outline of the configuration of a lower dust collecting section. [Figure 20] FIG. 2 is an explanatory diagram showing the main steps of the membrane treatment. [Figure 21] FIG. 1 is a flow diagram showing the main steps of membrane treatment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In recent years, in the manufacturing process of semiconductor devices, processes are performed on overlapped wafers, which are semiconductor substrates (hereinafter referred to as "wafers") on whose surfaces a plurality of devices such as electronic circuits are formed. For example, the first wafer that forms the overlapped wafer is thinned, and the devices formed on the first wafer are transferred to the second wafer that forms the overlapped wafer.

[0009] Usually, the peripheral edge of the wafer is chamfered, but as described above, when the thinning process or transfer process is performed on the laminated wafer, the peripheral edge of the first wafer after thinning or the laminated wafer after transfer may become sharply pointed (so-called knife edge shape). If this happens, chipping may occur at the peripheral edge of these wafers, which may cause damage to the wafer. Therefore, the peripheral edge of the first wafer before processing is removed, which is called edge trimming.

[0010] Here, unnecessary surface films and particles remain on the surface of the second wafer after edge trimming, specifically, on the peripheral portion of the second wafer exposed by removing the first wafer. These surface films and particles may peel off, fall off, or scatter during transportation or processing of the laminated wafer, and may cause contamination of the inside of the wafer processing system, the inside of the cassette, or other laminated wafers. Therefore, after edge trimming, the surface film on the peripheral portion of the second wafer is removed.

[0011] There are various methods for removing the surface film on the peripheral portion, for example, by irradiating the surface film with laser light. When using laser light in this way, fine dust is generated by the laser processing (ablation processing). If the dust adheres to the focusing lens of the laser light, the processing quality decreases. Furthermore, if the dust adheres to the wafer surface, the production yield of the product wafer decreases. Furthermore, if the dust adheres to the wafer processing equipment, the operating rate decreases.

[0012] Therefore, conventionally, for example, a laser processing apparatus (wafer processing apparatus) disclosed in Patent Document 1 is provided with a dust exhaust means for collecting and discharging dust generated during laser processing. The dust exhaust means is provided at the lower end of the collector, that is, the dust exhaust means and the collector are configured as one unit. Moreover, the dust exhaust means and the collector are configured as one unit so as to be freely movable.

[0013] However, when the dust exhaust means and the collector are moved together, a large space is required inside the apparatus. In addition, the exhaust pipe attached to the dust exhaust means also needs to be moved, which requires an even larger space inside the apparatus. Therefore, there is room for improvement in the conventional substrate processing.

[0014] The technology disclosed herein appropriately collects dust particles generated when a substrate is irradiated with a laser beam to process the substrate. Hereinafter, a wafer processing system including a film processing apparatus as a substrate processing apparatus according to the present embodiment and a wafer processing method as a substrate processing method will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0015] In the wafer processing system 1 according to the present embodiment, which will be described later, a process is performed on a laminated wafer T as a substrate in which a first wafer W1 and a second wafer W2 are bonded together, as shown in FIG. 1. In the wafer processing system 1, the peripheral portion We of the first wafer W1 is removed. Hereinafter, in the first wafer W1, the surface that is bonded to the second wafer W2 is referred to as the front surface W1a, and the surface opposite the front surface W1a is referred to as the back surface W1b. Similarly, in the second wafer W2, the surface that is bonded to the first wafer W1 is referred to as the front surface W2a, and the surface opposite the front surface W2a is referred to as the back surface W2b. In addition, in the first wafer W1, the region radially inward of the peripheral portion We to be removed is referred to as the central portion Wc.

[0016] The first wafer W1 is a semiconductor wafer such as a silicon substrate, and a device layer D1 including a plurality of devices is formed on the surface W1a. A bonding film F1 is further formed on the device layer D1, and the device layer D1 is bonded to the second wafer W2 via the bonding film F1. Examples of the bonding film F1 include an oxide film (SiO2 film, TEOS film), a SiC film, a SiCN film, and an adhesive. The peripheral portion We of the first wafer W1 is chamfered, and the thickness of the cross section of the peripheral portion We decreases toward the tip. The peripheral portion We is a portion to be removed in edge trimming described later, and is, for example, in a range of 0.5 mm to 5 mm in the radial direction from the outer end of the first wafer W1. A laser absorbing layer (not shown) capable of absorbing laser light irradiated to the inside of the laminated wafer T when removing the peripheral portion We may be further formed on the interface between the first wafer W1 and the device layer D1. The bonding film F1 formed on the device layer D1 may be used as the laser absorbing layer.

[0017] The second wafer W2 has, for example, the same configuration as the first wafer W1, and the device layer D2 and the bonding film F2 are formed on the surface W2a, and the peripheral portion is chamfered. Note that the second wafer W2 does not need to be a device wafer on which the device layer D2 is formed, and may be, for example, a support wafer that supports the first wafer W1. In such a case, the second wafer W2 functions as a protective material that protects the device layer D1 of the first wafer W1.

[0018] In this embodiment, the device layers D1, D2 and bonding films F1, F2 formed on the first wafer W1 and the second wafer W2 may be referred to as “surface films.” In other words, a plurality of surface films are laminated on the first wafer W1 and the second wafer W2 according to this embodiment.

[0019] 2, the wafer processing system 1 has a configuration in which a load / unload block G1, a transport block G2, and a processing block G3 are integrally connected. The load / unload block G1, the transport block G2, and the processing block G3 are arranged in this order from the negative side of the X-axis.

[0020] The carry-in / out block G1 carries in and out a cassette C capable of accommodating a plurality of overlapped wafers T, for example, between the outside and the device. A cassette mounting table 10 is provided in the carry-in / out block G1. In the illustrated example, a plurality of cassettes C, for example, four cassettes C, can be freely mounted in a line in the Y-axis direction on the cassette mounting table 10. The number of cassettes C mounted on the cassette mounting table 10 is not limited to the present embodiment and can be determined arbitrarily.

[0021] In the transport block G2, a wafer transport device 20 is provided adjacent to the cassette mounting table 10 on the X-axis positive side of the cassette mounting table 10. The wafer transport device 20 is configured to be movable on a transport path 21 extending in the Y-axis direction. The wafer transport device 20 has, for example, two transport arms 22, 22 for holding and transporting the overlapped wafer T. Each transport arm 22 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. The configuration of the transport arm 22 is not limited to this embodiment, and may have any configuration. The wafer transport device 20 is configured to be able to transport the overlapped wafer T to the cassette C on the cassette mounting table 10 and a transition device 30 described later.

[0022] In the transfer block G2, a transition device 30 for transferring the overlapped wafer T is provided adjacent to the wafer transfer device 20 on the positive side of the wafer transfer device 20 in the X-axis direction.

[0023] The processing block G3 includes a wafer transfer device 40, a cleaning device 50, an edge removal device 60, an interface modification device 70, an internal modification device 80, a film processing device 90 as a substrate processing device, and an inspection device 100.

[0024] The wafer transport device 40 is configured to be movable on a transport path 41 extending in the X-axis direction. The wafer transport device 40 has, for example, two transport arms 42, 42 for holding and transporting the overlapped wafer T. Each transport arm 42 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. The configuration of the transport arm 42 is not limited to this embodiment, and may have any configuration. The wafer transport device 40 is configured to be able to transport the overlapped wafer T to the transition device 30, the cleaning device 50, the edge removal device 60, the interface modification device 70, the internal modification device 80, and the film processing device 90.

[0025] The cleaning device 50 cleans the overlapped wafer T. The edge removal device 60 removes the edge portion We of the first wafer W1, i.e., performs edge trim processing. The interface modification device 70 irradiates the interface between the first wafer W1 and the second wafer W2 with laser light (interface laser light, for example, CO2 laser) to form an unbonded area Ae described below. The internal modification device 80 irradiates the inside of the first wafer W1 with laser light (internal laser light, for example, YAG laser) to form an edge modified layer M1 that serves as a base point for peeling off the edge portion We, and a divided modified layer M2 that serves as a base point for dividing the edge portion We into small pieces. The film processing device 90 irradiates a laser light (film processing laser light, for example, CO2 laser or IR laser) to a surface film (residual film) exposed at the edge portion of the second wafer W2 by the edge trim processing. The detailed configuration of the film processing device 90 will be described later. The inspection apparatus 100 inspects the peripheral portion of the first wafer W1 after the unbonded region Ae is formed, or the peripheral portion of the second wafer W2 after the film processing.

[0026] The above-described wafer processing system 1 is provided with a control device 110. The control device 110 is, for example, a computer equipped with a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the laminated wafer T in the wafer processing system 1. The above-described program may be recorded in a computer-readable storage medium H and installed from the storage medium H to the control device 110. The above-described storage medium H may be temporary or non-temporary.

[0027] Next, a description will be given of wafer processing performed using the thus configured wafer processing system 1. In this embodiment, the first wafer W1 and the second wafer W2 are bonded in a bonding device (not shown) outside the wafer processing system 1 to form a laminated wafer T in advance.

[0028] First, a cassette C storing a plurality of overlapped wafers T is placed on the cassette placement stage 10 of the carry-in / out block G1. Next, the overlapped wafers T in the cassette C are taken out by the wafer transfer device 20. The overlapped wafers T taken out from the cassette C are transferred to the wafer transfer device 40 via the transition device 30, and then transferred to the interface modification device 70. As shown in FIG. 3(a), the interface modification device 70 irradiates a laser beam (for example, a CO2 laser having a wavelength of 8.9 μm to 11 μm) onto the interface between the first wafer W1 and the device layer D1 (more specifically, the above-mentioned laser absorption layer formed at the interface) while rotating the overlapped wafer T (first wafer W1), thereby forming an unbonded region Ae (step S1 in FIG. 4).

[0029] In the unbonded region Ae, the interface between the first wafer W1 and the device layer D1 is modified or peeled off, and the bonding strength between the first wafer W1 and the second wafer W2 is reduced or eliminated. As a result, an annular unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D1, and a bonded region Ac is formed at the radial inside of the unbonded region Ae, where the first wafer W1 and the second wafer W2 are bonded. In edge trimming, which will be described later, the peripheral portion We of the first wafer W1, which is the object of removal, is removed, and the presence of the unbonded region Ae in this way allows the peripheral portion We to be removed appropriately.

[0030] The overlapped wafer T with the unbonded region Ae formed therein is then transported by the wafer transport device 40 to the internal reforming device 80. In the internal reforming device 80, as shown in FIG. 3(b) and FIG. 5, a peripheral modified layer M1 and a divided modified layer M2 are formed inside the first wafer W1 (step S2 in FIG. 4). The peripheral modified layer M1 serves as a base point for removing the peripheral portion We in the edge trimming described below. The divided modified layer M2 serves as a base point for breaking the peripheral portion We into small pieces to be removed. In the drawings used in the following explanation, the divided modified layer M2 may be omitted in order to avoid complicating the illustration.

[0031] As shown in Fig. 3(b), a crack C1 extends from the peripheral modified layer M1 formed inside the first wafer W1 in the thickness direction of the first wafer W1. The lower end of the crack C1 reaches, for example, the surface W1a or the unbonded region Ae of the first wafer W1.

[0032] The laminated wafer T in which the peripheral modified layer M1 and the divided modified layer M2 are formed inside the first wafer W1 is then transported by the wafer transport device 40 to the peripheral removal device 60. In the peripheral removal device 60, as shown in FIG. 3(c), the peripheral portion We of the first wafer W1 is removed, that is, an edge trimming process is performed (step S3 in FIG. 4). At this time, the peripheral portion We is peeled from the center portion Wc of the first wafer W1 using the peripheral modified layer M1 and the crack C1 as base points, and is also peeled from the device layer D1 (second wafer W2) using the unbonded region Ae as base points. At this time, the removed peripheral portion We is also divided into small pieces using the divided modified layer M2 and the crack C2 as base points.

[0033] In removing the peripheral portion We, for example, a wedge-shaped blade may be inserted into the interface between the first wafer W1 and the second wafer W2 forming the overlapped wafer T. In edge trimming, an impact is applied to the peripheral portion We of the first wafer W1, so that the peripheral portion We is appropriately peeled off from the peripheral modified layer M1 and the crack C1 as base points.

[0034] The laminated wafer T from which the peripheral portion We of the first wafer W1 has been removed is then transferred by the wafer transfer device 40 to the film processing device 90. In the film processing device 90, as shown in FIG. 3(d), a process for removing a surface film on the peripheral portion of the second wafer W2 from which the peripheral portion We has been removed (hereinafter, sometimes referred to as "film processing") is performed (step S4 in FIG. 4).

[0035] Unwanted surface films and particles remain on the surface of the second wafer W2 after the peripheral portion We is removed, specifically, on the peripheral portion of the second wafer W2 exposed by the removal of the first wafer W1. These surface films and particles may peel off, fall off, or scatter during transportation or processing of the laminated wafer T, and may cause contamination of the inside of the wafer processing system 1, the inside of the cassette C, or other laminated wafers T.

[0036] In step S4, the surface film on the peripheral portion of the second wafer W2 is removed in order to suppress scattering of the surface film and particles after removal of the peripheral portion We. That is, for example, the surface film is irradiated with a laser beam (for example, a CO2 laser) to remove the surface film.

[0037] In this case, the surface film is removed by irradiation with laser light, and the particles remaining on the surface of the surface film are also removed, so that the surface film and the particles are prevented from peeling off, falling off, or scattering.

[0038] The laminated wafer T from which the surface film on the peripheral portion of the second wafer W2 has been removed is then transferred by the wafer transfer device 40 to the cleaning device 50. In the cleaning device 50, the peripheral portion We is removed, and the back surface W1b of the first wafer W1 after the film processing and the exposed portion are cleaned (step S5 in FIG. 4). Note that in the cleaning device 50, the back surface W2b of the second wafer W2 may be cleaned together with the back surface W1b of the first wafer W1.

[0039] Thereafter, the overlapped wafer T on which all the wafer processes have been performed is transferred to the cassette C on the cassette mounting table 10 by the wafer transfer device 20 via the transition device 30. In this manner, a series of wafer processes in the wafer processing system 1 is completed.

[0040] Next, a detailed configuration of the above-mentioned film treatment device 90 will be described.

[0041] As shown in FIGS. 6 to 8, the film processing apparatus 90 has a chuck 200 as a substrate holding unit that holds the overlapped wafer T on the upper surface. The chuck 200 holds the back surface W2b of the second wafer W2 by suction with the first wafer W1 on the upper side and the second wafer W2 on the lower side. The chuck 200 is supported by a slider table 202 via an air bearing 201. A rotating unit 203 is provided on the lower surface side of the slider table 202. The rotating unit 203 has a built-in motor as a driving source. The chuck 200 is configured to be rotatable around a vertical axis by the rotating unit 203 via the air bearing 201. The slider table 202 is configured to be movable on a rail 206 that is provided on a base 205 and extends in the Y-axis direction via a moving unit 204 provided on the lower surface side. The driving source of the moving unit 204 is not particularly limited, but a linear motor is used, for example.

[0042] A macro camera 210 is provided above the chuck 200. For example, the macro camera 210 is supported by a support column 211. The macro camera 210 captures an image of the outer edge of the second wafer W2. The macro camera 210 includes, for example, a coaxial lens, irradiates infrared light (IR light), and receives reflected light from an object. For example, the imaging magnification of the macro camera 210 is 2x. The image captured by the macro camera 210 is output to the control device 110. The control device 110 calculates the amount of eccentricity between the center of the chuck 200 and the center of the second wafer W2 from the image captured by the macro camera 210.

[0043] Above the chuck 200 and on the Y-axis negative side of the macro camera 210, a laser irradiation unit 220 is provided that irradiates a laser beam onto the laminated wafer T held by the chuck 200. The laser irradiation unit 220 is connected to a laser head (not shown) that incorporates a laser oscillator (not shown) that oscillates a laser beam. The laser irradiation unit 220 is supported by a support member 221. The laser irradiation unit 220 is configured to be freely raised and lowered by an elevator unit 223 along a rail 222 that extends in the vertical direction. The laser irradiation unit 220 is also configured to be freely moved in the Y-axis direction by a moving unit 225 along a rail 224 that extends in the Y-axis direction on the support column 211.

[0044] The laser irradiation unit 220 irradiates a surface film on the peripheral portion of the second wafer W2 with laser light to remove the surface film. The laser irradiation unit 220 includes a condenser lens 231 and a nozzle 232.

[0045] As shown in FIG. 9, the condenser lens 231 condenses the laser light oscillated from the laser oscillator of the laser head and irradiates the surface film on the peripheral edge of the second wafer W2.

[0046] The nozzle 232 is provided below the condenser lens 231. The nozzle 232 is a hollow cylindrical member through which the laser light from the condenser lens 231 passes and is irradiated onto a surface film on the peripheral edge of the second wafer W2.

[0047] A first gas supply unit 233 that supplies gas such as dry air to the inside of the nozzle 232 is provided at the top of the nozzle 232. The first gas supply unit 233 is connected to an air supply path 232a formed inside the side wall of the nozzle 232. The gas supplied from the first gas supply unit 233 and the air supply path 232a flows downward through the nozzle 232 and is sprayed onto the surface film of the peripheral portion of the second wafer W2. The gas can prevent dust generated by the laser processing from adhering to the condenser lens 231.

[0048] 6 to 8, the film processing apparatus 90 has a dust collection section 240 that collects dust. The dust collection section 240 collects fine dust generated during the film processing (laser processing) in step S4 described above, i.e., when the laser irradiation section 220 irradiates the surface film on the peripheral portion of the second wafer W2 with laser light. The dust collection section 240 has an upper dust collection section 241 and a lower dust collection section 242.

[0049] The upper dust collection unit 241 is provided above the chuck 200 and directly below the laser irradiation unit 220. As shown in Figures 10 and 11, the upper dust collection unit 241 has a sleeve 250 and an exhaust duct 260. The sleeve 250 is provided on the upper surface of the exhaust duct 260.

[0050] As shown in Figs. 9 and 11, the sleeve 250 has a generally truncated cone shape with a diameter decreasing from the top to the bottom. A storage section 251 for storing a part of the nozzle 232 of the laser irradiation section 220 is formed in the center of the upper surface of the sleeve 250. The nozzle 232 can move up and down relative to the storage section 251 and can enter or leave the storage section 251. For example, the laser head is provided with a power meter (not shown) for checking the output of the laser light, but the output of this laser light cannot be measured during exhaust in the dust collection section 240. Therefore, in such a case, the nozzle 232 is made to retract from the storage section 251. On the other hand, the nozzle 232 is stored in the storage section 251 during laser processing.

[0051] Moreover, the nozzle 232 is movable in the Y-axis direction in the storage section 251. Furthermore, the lower end of the nozzle 232 is rotatable around the upper end. Note that the nozzle 232 does not come into contact with the storage section 251 when it is stored in the storage section 251.

[0052] As described above, the nozzle 232 is movable in the Y-axis direction, and in order to enable the nozzle 232 to move during laser processing, the accommodation section 251 may have a long hole shape with a long axis in the Y-axis direction, as shown in Fig. 12. In addition, a long hole 252 for passing the laser light irradiated from the nozzle 232 is formed on the lower surface of the accommodation section 251, and this long hole 252 may also have a long axis in the Y-axis direction. Note that, when performing film processing, the movement distance of the nozzle 232 is, for example, 2 mm to 5 mm, as described later. For this reason, the length of the long hole 252 in the Y-axis direction is preferably 5 mm or more.

[0053] As shown in FIG. 9 and FIG. 11, a second gas supply part 253 is provided on the upper surface of the sleeve 250 on the X-axis positive side of the accommodation part 251 to supply gas such as dry air to an intake passage 262 described later. The second gas supply part 253 is connected to an intake passage 250a formed by penetrating the sleeve 250 from the upper surface to the lower surface. The intake passage 250a is connected to a discharge part 250b formed on the lower surface of the sleeve 250. The gas supplied from the discharge part 250b via the second gas supply part 253 and the intake passage 250a flows out to the intake passage 262. The gas blows away fumes generated by the laser processing. The gas from the second gas supply part 253 guides the atmosphere of the intake passage 262 to an exhaust passage 263 described later. At this time, the fumes are also guided to the exhaust passage 263.

[0054] As described later, in the laser processing, the overlapped wafer T is irradiated with laser light while rotating the overlapped wafer T. It is preferable that the gas from the second gas supply part 253, the gas supply path 250a, and the discharge part 250b is supplied in the rotation direction of the overlapped wafer T. In this case, the atmosphere in the gas intake path 262 can be guided to the exhaust path 263 more reliably.

[0055] The exhaust duct 260 is provided extending in the X-axis direction. As shown in Fig. 11 and Fig. 13, an opening 261 for passing the laser light irradiated from the nozzle 232 is formed on the lower surface 260a of the exhaust duct 260 below the sleeve 250. The lower surface 260a has a substantially circular shape in a plan view. An intake flow path 262 and an exhaust flow path 263 are formed inside the exhaust duct 260.

[0056] The intake passage 262 is a passage formed between the sleeve 250 and the opening 261. The intake passage 262 sucks in the atmosphere between the exhaust duct 260 and the laminated wafer T held by the chuck 200 through the opening 261.

[0057] The exhaust flow path 263 is a flow path that communicates with the intake flow path 262 and extends in a tangential direction of the overlapped wafer T, i.e., in the X-axis direction. The exhaust flow path 263 communicates with an exhaust pipe 264 provided at the end of the exhaust duct 260 on the X-axis negative direction side. The exhaust pipe 264 is connected to an exhaust device (not shown) that sucks in the internal atmosphere of the exhaust duct 260.

[0058] As shown in FIG. 9 and FIG. 11, inside the exhaust duct 260, a third gas supply section 265 that supplies a gas such as dry air is provided on the X-axis positive side of the accommodation section 251. The third gas supply section 265 is connected to an air supply path 260b formed by penetrating from the side wall of the exhaust duct 260 to the lower surface. The air supply path 260b is connected to an outlet section 260c formed on the lower surface 260a of the exhaust duct 260. A plurality of outlet sections 260c are provided around the opening 261 on the lower surface 260a of the exhaust duct 260. The plurality of outlet sections 260c are provided at equal intervals on a circle concentric with the opening 261, that is, the radial distance between each of the outlet sections 260c and the lower surface 260a is equal. Therefore, the atmosphere between the exhaust duct 260 and the laminated wafer T is uniformly sucked through the opening 261.

[0059] The gas supplied from the third air supply section 265, the air supply passage 260b, and the discharge section 260c is blown out downward around the opening 261, forming a so-called air curtain. In this case, the dust generated by the laser processing is prevented from flowing out of the air curtain. Furthermore, since the diameter of the opening 261 is larger than the gap outside the air curtain, the gas from the third air supply section 265, the air supply passage 260b, and the discharge section 260c flows into the intake passage 262 through the opening 261. In this case, the dust also flows into the intake passage 262 through the opening 261, so that the dust can be reliably collected in the exhaust duct 260. The number of the air supply passages 260b on the lower surface 260a of the exhaust duct 260 is not limited, but the more the number, the higher the effect of the air curtain.

[0060] As shown in FIG. 12, a fourth air supply section 266 that supplies gas such as dry air is provided on the side surface of the exhaust duct 260 on the Y-axis positive side of the storage section 251. The fourth air supply section 266 is connected to an air supply passage 260d formed by penetrating from the side wall of the exhaust duct 260 toward the intake air flow passage 262. The air supply passage 260d is connected to a discharge section 260e formed on the inner surface of the exhaust duct 260. The air supply passage 260d and the discharge section 260e are formed, for example, toward the X-axis positive direction with respect to the intake air flow passage 262. The gas supplied from the fourth air supply section 266, the air supply passage 260d, and the discharge section 260e flows into the intake air flow passage 262 and forms a swirling flow in the intake air flow passage 262. The positions of the air supply passage 260d and the discharge section 260e are not limited to those of the present embodiment as long as they are positions that can form a swirling flow in the intake air flow passage 262.

[0061] As shown in FIG. 14 and FIG. 15, during laser processing, the atmosphere between the exhaust duct 260 and the laminated wafer T is sucked into the exhaust duct 260 through the opening 261, and then flows through the intake passage 262 and the exhaust passage 263, and is discharged from the exhaust pipe 264. Then, dust generated during laser processing is also collected along with this air flow. At this time, fumes generated during laser processing are blown away by the gas from the second gas supply part 253 and guided to the exhaust passage 263. In addition, the gas from the third gas supply part 265 prevents the dust from flowing out to the outside. Furthermore, a swirling flow is formed in the intake passage 262 by the gas from the fourth gas supply part 266, and the atmosphere and dust are smoothly guided to the exhaust passage 263.

[0062] 6 and 8, the lower dust collecting section 242 has a dust collecting plate 270 and a support member 271. The dust collecting plate 270 is provided close to the outer periphery of the chuck 200. The gap between the dust collecting plate 270 and the outer periphery of the chuck 200 is, for example, 0.5 mm or less. The narrower this gap is, the more the outflow of dust to the outside can be suppressed.

[0063] 16, the height of the upper surface of the dust collection plate 270 is desirably the same as the height of the upper surface of the overlapped wafers T (the back surface W1b of the first wafer W1) held by the chuck 200. The lower surface of the dust collection plate 270 is supported by a support member 271. The support member 271 is fixed to the slider table 202. That is, the lower dust collection part 242 is provided integrally with the chuck 200, and as the chuck 200 moves, the lower dust collection part 242 also moves in the Y-axis direction.

[0064] 17, the dust collecting plate 270 has a substantially rectangular shape in a plan view, and the end 270a on the chuck 200 side is curved along the outer periphery of the chuck 200. However, since the chuck 200 rotates, the dust collecting plate 270 and the chuck 200 are not in contact with each other. The length A of the dust collecting plate 270 in the Y-axis direction is greater than the diameter D of the opening 261 of the exhaust duct 260. The length B of the dust collecting plate 270 in the X-axis direction is greater than the radius D / 2 of the opening 261. When the dust collecting plate 270 is disposed below the exhaust duct 260 of the upper dust collecting part 241, the dust collecting plate 270 is provided so as to overlap the opening 261 in a plan view. Unlike the present embodiment, when the chuck 200 does not rotate, the dust collecting plate 270 and the chuck 200 may be in contact with each other.

[0065] 18, when the peripheral portion of the second wafer W2 is irradiated with laser light during laser processing, the opening 261 is covered by the chuck 200 in a plan view from the edge of the chuck 200 (superimposed wafer T) in the radial direction, but the opening 261 is exposed from the edge to the radial direction. This may cause an uneven amount of dust suction around the entire circumference of the opening 261, making it difficult to stably collect dust.

[0066] 19, the dust collecting plate 270 is provided so as to overlap the opening 261 in a plan view when placed below the exhaust duct 260. In this case, the amount of dust sucked in becomes uniform around the entire circumference of the opening 261, and the dust can be collected stably.

[0067] Next, the membrane treatment carried out in the membrane treatment device 90 configured as above will be described.

[0068] First, the chuck 200 is placed at the standby position P1 as shown in Fig. 20(a). At this time, the nozzle 232 is accommodated in the accommodation portion 251 of the sleeve 250. Then, the laminated wafer T is carried into the film processing apparatus 90 and held by the chuck 200 (step T1 in Fig. 21).

[0069] Next, the chuck 200 is moved to a macro alignment position. The macro alignment position is a position where the macro camera 210 can capture an image of the outer edge of the second wafer W2. Next, the macro camera 210 captures images of the outer edge of the second wafer W2 in the circumferential direction of 360 degrees. The captured images are output from the macro camera 210 to the control device 110.

[0070] The control device 110 calculates the amount of eccentricity between the center of the chuck 200 and the center of the second wafer W2 from the image of the macro camera 210. Furthermore, the control device 110 calculates the amount of movement of the chuck 200 based on the amount of eccentricity so as to correct the Y-axis component of the amount of eccentricity. Then, the position of the chuck 200 is determined so that the center of the second wafer W2m and the center of the chuck 200 coincide with each other (step T2 of u22).

[0071] Next, as shown in Fig. 20(b), the chuck 200 is moved to a processing position P2 (step T3 in Fig. 21). The processing position P2 is a position where the end of the peripheral portion of the second wafer W2 in the positive direction of the Y axis is disposed directly below the nozzle 232 of the laser irradiation unit 220. At this time, the dust collection plate 270 is disposed so as to overlap the opening 261 of the exhaust duct 260 in a plan view.

[0072] Next, while rotating the chuck 200, the nozzle 232 is moved in the negative direction of the X-axis, and the surface film on the peripheral portion of the second wafer W2 is irradiated with laser light from the nozzle 232. Then, the surface film is irradiated with the laser light in a spiral shape. The movement distance of the nozzle 232 is 2 mm to 5 mm, and the peripheral portion of the second wafer W2 to be processed is in the range of 2 mm to 5 mm from the outer edge. That is, by moving the nozzle 232, the processing width by the laser light is adjusted. Then, the surface film is removed (Step T4 in FIG. 21).

[0073] During the laser processing in step T4, dust is generated. This dust is collected by the upper dust collector 241. Specifically, as described above, the atmosphere between the exhaust duct 260 and the laminated wafer T is sucked into the exhaust duct 260 through the opening 261, and then flows through the intake passage 262 and the exhaust passage 263, and is discharged from the exhaust pipe 264. Then, the dust generated during the laser processing is collected by riding on this air flow.

[0074] After the surface film on the peripheral portion of the second wafer W2 is removed, the chuck 200 is then moved to the standby position P1. Then, the laminated wafer T is unloaded from the film processing apparatus 90 (step T5 in FIG. 21). In this manner, a series of film processing steps in the film processing apparatus 90 is completed.

[0075] According to the above embodiment, since the laser irradiation unit 220 and the upper dust collection unit 241 are provided separately, the exhaust duct 260 of the upper dust collection unit 241 can be made larger than when they are provided integrally as in the conventional case. Therefore, the dust generated during laser processing can be appropriately and efficiently collected by the upper dust collection unit 241.

[0076] Since the laser irradiation unit 220 and the upper dust collection unit 241 are provided separately, the condenser lens 231 can be made smaller, and the space required for the device can be reduced. In addition, the focal height of the condenser lens 231 can be easily changed, and the processing time can be shortened by performing laser processing at a defocused position. Furthermore, by changing the focal height, it is possible to easily respond to fluctuations in the processing point height of laser processing due to machine differences and changes in the thickness of the overlapped wafer T.

[0077] In the above embodiment, the technique disclosed herein is applied to remove the surface film on the peripheral portion of the second wafer W2, but the technique can also be used for other purposes. For example, when irradiating a laser beam onto a substrate surface to remove a substrate surface film or to flatten the substrate, The technology disclosed herein can be applied when forming a modified layer inside a substrate, when breaking a substrate, etc. Even in such cases, the same effects as those of the above embodiment can be obtained when irradiating the peripheral portion with laser light.

[0078] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0079] 90 Membrane treatment equipment 220 Laser irradiation section 240 Dust collection section 251 Storage unit T Polymerized Wafer W1 First wafer W2 Second wafer

Claims

[Claim 1] A substrate processing apparatus that processes a substrate by irradiating the substrate with laser light, a laser irradiation unit that irradiates the substrate with the laser light; A dust collecting section that collects dust, The dust collection unit is provided with a housing unit that houses at least a part of the laser irradiation unit and is capable of moving the laser irradiation unit.

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