Vapor growth device

Abstract

To provide a vapor growth device which enables delivery to a metal organic chemical vapor deposition (MOCVD) reactor and delivery to a dry cleaning furnace to be conducted automatically.SOLUTION: A vapor growth device 1 includes: a reaction chamber 10 which houses a metal organic chemical vapor deposition (MOCVD) reactor 16 in which MOCVD reaction is caused on a wafer W held by a reactor member 25; a first transport chamber 45 which houses a first transport part which transports the reactor member and the wafer, is disposed adjacent to the reaction chamber, and may communicate with the reaction chamber; and a cleaning chamber 65 which houses a dry cleaning furnace 66 for cleaning the reactor member, is disposed adjacent to the first transport chamber, and may communicate with the first transport chamber.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a vapor phase growth apparatus. [Background technology]

[0002] Conventionally, crystallization on a wafer has been performed in an MOCVD reactor (forming a semiconductor thin film). When crystallization is performed, a reaction product (deposit) is generated in the MOCVD reactor. This reaction product adheres to reactor components such as a susceptor cover used in the MOCVD reactor, so it is necessary to remove this reactor component, for example, by a dry cleaning device (dry cleaning furnace) as described in Patent Document 1. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-186311 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, conventionally, the transfer of wafers and reactor components to the MOCVD reactor and the transfer of reactor components to the dry cleaning device are performed by an operator. This causes a problem in that it takes a long time to grow the crystal of the wafer.

[0005] The present invention has been made in consideration of the above problems, and has an object to provide a vapor phase growth apparatus that can automatically transfer a substrate to an MOCVD reactor and a dry cleaning furnace. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention proposes the following means. (1) A first aspect of the present invention is a vapor phase growth apparatus comprising: a reaction chamber accommodating an MOCVD reactor for heating a wafer held in a reactor member; a first transfer chamber accommodating a first transfer section for transporting the reactor member and the wafer, the first transfer chamber being arranged adjacent to the reaction chamber and capable of communicating with the reaction chamber; and a cleaning chamber accommodating a dry cleaning furnace for cleaning the reactor member, the first transfer chamber being arranged adjacent to the first transfer chamber and capable of communicating with the first transfer chamber.

[0007] In this invention, the wafer held on the reactor member can be heated by the MOCVD reactor, and the reactor member can be cleaned by the dry cleaning furnace. The reaction chamber housing the MOCVD reactor and the cleaning chamber housing the dry cleaning furnace are disposed adjacent to each other with respect to the first transfer chamber housing the first transfer unit, and each can communicate with the first transfer chamber. Therefore, the distance between the reaction chamber and the first transfer chamber and the distance between the cleaning chamber and the first transfer chamber are shorter, respectively, compared to when other chambers are disposed between the reaction chamber and the first transfer chamber and between the cleaning chamber and the first transfer chamber. Therefore, the first transfer section can automatically transfer the wafer and the reactor member to the MOCVD reactor through the communicating portion, and can automatically transfer the reactor member to the dry cleaning furnace.

[0008] (2) A second aspect of the present invention may be the vapor phase growth apparatus described in (1), comprising a reaction atmosphere section that fills the reaction chamber with an inert gas, a first transfer atmosphere section that fills the first transfer chamber with the inert gas, and a control section that controls the reaction atmosphere section and the first transfer atmosphere section, wherein the control section makes the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere section higher than the pressure of the inert gas in the reaction chamber by the reaction atmosphere section. In this invention, the reaction chamber can be filled with inert gas by the reaction atmosphere section, and the first transfer atmosphere section can fill the first transfer chamber with inert gas. Then, the control section makes the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere section higher than the pressure of the inert gas in the reaction chamber by the reaction atmosphere section. Therefore, the inert gas flows from the first transfer chamber toward the reaction chamber through the portion where the first transfer chamber and the reaction chamber communicate with each other. This makes it possible to prevent reaction products generated in the MOCVD reactor from flowing into the first transfer chamber through the communication portion.

[0009] (3) A third aspect of the present invention may be the vapor phase growth apparatus according to (1) or (2), further comprising a cleaning atmosphere unit for filling the cleaning chamber with an inert gas. In this invention, by filling the cleaning chamber with an inert gas by the cleaning atmosphere section, it is possible to prevent the wafer from being exposed to the atmosphere not only in the first transfer chamber and the reaction chamber, but also in the cleaning chamber.

[0010] (4) A fourth aspect of the present invention may be a vapor phase growth apparatus as described in any one of (1) to (3), comprising a second transfer chamber that accommodates a second transfer unit that transfers the wafer between the first transfer chamber, is arranged adjacent to the first transfer chamber, and is capable of communicating with the first transfer chamber, and a second transfer atmosphere unit that fills the second transfer chamber with the inert gas, and the control unit makes the pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit higher than the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit. In this invention, the second transfer section can transfer the wafer between the first transfer chamber and the second transfer chamber through a portion where the second transfer chamber and the first transfer chamber communicate with each other. The second transfer atmosphere section can fill the second transfer chamber with an inert gas. At this time, the control unit makes the pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit higher than the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit, thereby preventing the reaction products generated in the MOCVD reaction furnace from flowing into the second transfer chamber through the first transfer chamber.

[0011] (5) A fifth aspect of the present invention may be the vapor phase growth apparatus according to (2), wherein the inert gas has a dew point of −40° C. or lower and does not contain oxygen gas. In the present invention, in addition to preventing moisture in the inert gas from adhering to the wafer, the present invention can also prevent the wafer and the like from being oxidized in the inert gas atmosphere.

[0012] (6) A sixth aspect of the present invention may be a vapor phase growth apparatus according to any one of (1) to (5), wherein the first transport part is capable of changing its orientation so as to face either the reaction chamber or the cleaning chamber with a support surface supporting the reactor member facing upward. In this invention, the reactor components supported on the support surface can be prevented from falling off the support surface. In this state, the orientation of the first transfer part can be changed so that it faces either the reaction chamber or the cleaning chamber. Effect of the Invention

[0013] In the vapor phase growth apparatus of the present invention, the transfer to the MOCVD reactor and the transfer to the dry cleaning furnace can be performed automatically. [Brief description of the drawings]

[0014] [Figure 1] 1 is a cross-sectional view showing a schematic plan view of a vapor phase growth apparatus according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view of an MOCVD reactor of the vapor phase growth apparatus. [Diagram 3] FIG. 2 is a front view of a locking piece of the vapor deposition apparatus. [Figure 4] FIG. 2 is a diagram illustrating the operation of a vapor phase growth apparatus. [Diagram 5] 1 is a flow chart showing the process of a vapor phase growth apparatus. [Figure 6] FIG. 2 is a diagram illustrating the operation of a vapor phase growth apparatus. [Figure 7] FIG. 2 is a diagram illustrating the operation of a vapor phase growth apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, one embodiment of a vapor phase growth apparatus according to the present invention will be described with reference to FIGS. As shown in FIG. 1, the vapor phase growth apparatus 1 of this embodiment includes a reaction chamber 10, a first transfer chamber 45, a cleaning chamber 65, a second transfer chamber 70, a reaction atmosphere section 85, a first transfer atmosphere section 90, a cleaning atmosphere section 95, a second transfer atmosphere section 100, and a control section 105. For example, the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 are each formed in a box shape. The cross sections of the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 in a plan view are each formed in a rectangular outer edge shape (picture frame shape). FIG. 1 shows only a susceptor cover 19 of an MOCVD reactor 16, which will be described later.

[0016] The reaction chamber 10 has a sidewall 11. An opening 11a (a communicating portion) penetrating the sidewall 11 is formed in the sidewall 11. The opening 11a is formed in the center of the sidewall 11. A gate valve 13, which is a shutter, is attached to the opening 11a. The gate valve 13 is capable of opening and closing the opening 11a. The reaction chamber 10 accommodates an MOCVD (Metal Organic Chemical Vapor Deposition) reaction furnace 16 and a plurality of temporary support arms 36. The MOCVD reactor 16 is an apparatus having a known configuration. As shown in Figures 1 and 2, the MOCVD reactor 16 has a chamber 17, a susceptor 18, a susceptor cover 19, a ceiling plate 20, and a push-up lifting mechanism 21. The susceptor cover 19 and the ceiling plate 20 constitute a reactor member 25.

[0017] As shown in Fig. 2, the chamber 17 has a chamber body 26 and a chamber lid 27. The chamber body 26 is formed into a cylindrical shape with a bottom. The chamber lid 27 is formed into a cylindrical shape with a top. The chamber lid 27 is disposed above the chamber body 26 and covers the opening of the chamber body 26. The chamber lid 27 is movable in the up and down direction relative to the chamber body 26. The susceptor 18 is formed in a disk shape. An opening 18a is formed in the center of the susceptor 18, through which a nozzle portion 30 (described later) can be inserted.

[0018] 1 and 2, the susceptor cover 19 is formed in a disk shape that is substantially the same as the shape of the susceptor 18. An opening 19a through which a nozzle portion 30, which will be described later, can be inserted is formed in the center of the susceptor cover 19. As shown in Fig. 2, a plurality of wafer pockets 19b, which are openings, are formed around the opening 19a in the susceptor cover 19. The wafer W is held in the wafer pocket 19b of the susceptor cover 19 (reactor member 25). The ceiling plate 20 is formed in a disk shape larger than the susceptor 18 in a plan view. An opening 20a through which the nozzle portion 30 described below can be inserted is formed in the center of the ceiling plate 20. The ceiling plate 20 is disposed above the susceptor cover 19 so as to face the susceptor cover 19. Between the ceiling plate 20 and the susceptor cover 19, a flow path L1 for a source gas is formed for crystallizing the wafer W to form a semiconductor thin film (crystallizing the wafer W).

[0019] The nozzle unit 30 is disposed in the center of the chamber body 26, and is fitted into the peripheral edge of the opening 20a of the ceiling plate 20. The nozzle unit 30 supports the ceiling plate 20, and supplies the source gas to the flow path L1. The nozzle portion 30 has a first nozzle wall 30a, a second nozzle wall 30b, a third nozzle wall 30c, and a fourth nozzle wall 30d.

[0020] In the first nozzle wall 30a, the upper end of a cylinder extending in the vertical direction protrudes radially outward. The second nozzle wall 30b is formed in a tubular shape with a diameter larger than the diameter of the cylinder of the first nozzle wall 30a, and has a flange at the upper end. The third nozzle wall 30c is formed in a tubular shape with a diameter larger than the outer diameter of the tubular portion of the second nozzle wall 30b, and has a flange at the upper end. The fourth nozzle wall 30d is formed in a tubular shape with a diameter larger than the outer diameter of the tubular portion of the third nozzle wall 30c, and has a flange at the upper end. The first nozzle wall 30a, the second nozzle wall 30b, the third nozzle wall 30c, and the fourth nozzle wall 30d are arranged in a nested manner.

[0021] A space formed between adjacent walls in the radial direction among the first nozzle wall 30a, the second nozzle wall 30b, the third nozzle wall 30c, and the fourth nozzle wall 30d serves as an introduction path L2 for the source gas. For example, when the semiconductor thin film is made of gallium nitride, the source gas includes an organometallic gas, an ammonia gas, and a purge gas.

[0022] For example, the push-up lift mechanism 21 can move the susceptor cover 19 in the up and down direction. 1, the vapor phase growth apparatus 1 includes two reactor members 25 each having a susceptor cover 19 and a ceiling plate 20. Hereinafter, one of the two reactor members 25 will be referred to as a susceptor cover 19A, and the other will be referred to as a susceptor cover 19B.

[0023] 1 and 3, the temporary support arm 36 has a locking piece 37 and a moving portion 38. As shown in Fig. 3, a first step 37a and a second step 37b are formed in the locking piece 37. The second step 37b is disposed above the first step 37a. The first step portion 37a can be engaged with the susceptor cover 19 from below the susceptor cover 19. The second step portion 37b can be engaged with the ceiling plate 20 from below the ceiling plate 20. The moving portion 38 moves the locking piece 37 in the vertical direction and in the direction along the horizontal plane.

[0024] 1, the first transfer chamber 45 serves the reaction chamber 10 and the side wall 11. The first transfer chamber 45 is disposed adjacent to the reaction chamber 10 on the side of the side wall 11. The first transfer chamber 45 has side walls 46, 47, and 48. When the gate valve 13 is open, the first transfer chamber 45 communicates with the reaction chamber 10. In this manner, the first transfer chamber 45 can communicate with the reaction chamber 10. The reaction chamber 10 and the first transfer chamber 45 are arranged side by side in a first direction X along a horizontal plane. The side wall 11 and the side wall 47 are disposed to face each other. The side wall 46 and the side wall 48 are disposed to face each other. Openings 46a, 47a, 48a are formed in the side walls 46, 47, 48, respectively, similar to the opening 11a in the side wall 11. Gate valves 50, 51, 52 similar to the gate valve 13 are attached to the openings 46a, 47a, 48a, respectively.

[0025] 4 is housed in the first transfer chamber 45. The first robot arm 55 transfers the reactor member 25 and the wafer W. The first robot arm 55 will be described in detail later.

[0026] 1, the cleaning chamber 65 supplies the first transfer chamber 45 and the side wall 47. The cleaning chamber 65 is disposed on the opposite side of the reaction chamber 10 with respect to the first transfer chamber 45. The reaction chamber 10, the first transfer chamber 45, and the cleaning chamber 65 are arranged in the first direction X in the order of the reaction chamber 10, the first transfer chamber 45, and the cleaning chamber 65. The cleaning chamber 65 is disposed adjacent to the side wall 47 side of the first transfer chamber 45. When the gate valve 51 is open, the cleaning chamber 65 communicates with the first transfer chamber 45. In this manner, the cleaning chamber 65 can communicate with the first transfer chamber 45. The cleaning chamber 65 contains a known dry cleaning furnace 66. The dry cleaning furnace 66 cleans the reactor components 25.

[0027] The second transfer chamber 70 is a so-called CtoC chamber, into which the wafer W is transferred from outside the vapor phase growth apparatus 1 using cassettes 73 and 74, which will be described later. The second transfer chamber 70 shares a side wall 48 with the first transfer chamber 45. The second transfer chamber 70 is disposed adjacent to the side wall 48 side of the first transfer chamber 45. The first transfer chamber 45 and the second transfer chamber 70 are disposed side by side along a horizontal plane in a second direction Y perpendicular to the first direction X. The second transfer chamber 70 has a sidewall 71 disposed to face the sidewall 48. The sidewall 71 is formed with openings 71a and 71b penetrating the sidewall 71. The openings 71a and 71b are disposed side by side along the sidewall 71. When the gate valve 52 is open, the second transfer chamber 70 communicates with the first transfer chamber 45. In this manner, the second transfer chamber 70 can communicate with the first transfer chamber 45.

[0028] Cassettes 73 and 74 capable of accommodating wafers W are disposed in the openings 71a and 71b, respectively. For example, the cassette 73 accommodates wafers W after a semiconductor thin film has been formed thereon (hereinafter also referred to as wafers WB (see FIG. 4)). In the following, the wafers WB are shown hatched. The cassette 74 accommodates wafers W before a semiconductor thin film has been formed thereon (hereinafter also referred to as wafers WA). The second transfer chamber 70 accommodates a second robot arm (second transfer unit) 77 and an orienter 78. The second robot arm 77 transfers the wafer W between the second transfer chamber 70 and the first transfer chamber 45. The second robot arm 77 will be described in detail later. The orienter 78 is for adjusting the phase of the wafer W.

[0029] As shown in FIG. 4, for example, a first robot arm 55 has a base 56, links 57 and 58, joints 59, 60 and 61, and a support portion 62. The base 56 is disposed on the bottom wall 49 of the first transfer chamber 45. For example, the joint 59 adjusts the angle between the base 56 and the link 57 and the orientation of the link 57 relative to the base 56. The joint 60 adjusts the angle between the links 57 and 58 and the orientation of the link 58 relative to the link 57. The joint 61 adjusts the angle between the link 58 and the support portion 62 and the orientation of the support portion 62 relative to the link 58.

[0030] The upper surface of the support portion 62 is a support surface 62 a that supports the reactor member 25 . Through known control by the control unit 105, the first robot arm 55 can change its own orientation (the first robot arm 55) so that it faces either the reaction chamber 10, the cleaning chamber 65, or the second transport chamber 70 with the support surface 62a facing upward. The first transport unit is not limited to the first robot arm 55, and may be a robot capable of traveling automatically. The second robot arm 77 is configured similarly to the first robot arm 55. The second robot arm 77 can change its own orientation so as to face either the first transfer chamber 45 or the side wall 71 with the support surface 77a facing upward.

[0031] 1, the reaction atmosphere section 85 fills the reaction chamber 10 with nitrogen gas (inert gas). Note that the inert gas is not limited to nitrogen gas, and may be carbon dioxide gas, helium gas, or the like. The dew point of the nitrogen gas is preferably −40° C. or lower. In other words, the dew point of water vapor contained in the nitrogen gas is preferably −40° C. or lower. It is preferable that the nitrogen gas does not contain oxygen gas.

[0032] For example, although not shown, the reaction atmosphere section 85 has piping, an on-off valve, a pressure gauge, and a scrubber (gas treatment device, not shown). A first end of the piping is connected to the side wall of the reaction chamber 10, communicates with the inside of the reaction chamber 10, and supplies nitrogen gas into the reaction chamber 10. A second end of the piping opposite to the first end is connected to a scrubber (gas treatment device, not shown). The reaction atmosphere section 85 can exhaust air and the like from within the reaction chamber 10 and supply nitrogen gas into the reaction chamber 10 through the piping. The on-off valve and the pressure gauge are provided in the piping. The pressure gauge measures the pressure inside the reaction chamber 10 through the piping. The pressure gauge may be provided on a side wall of the reaction chamber 10. The on-off valve opens and closes the piping, connects the piping to the outside, and releases this communication.

[0033] The first transfer atmospheric section 90, the cleaning atmospheric section 95, and the second transfer atmospheric section 100 are configured similarly to the reaction atmospheric section 85. The first transfer atmosphere section 90 is provided in the first transfer chamber 45. The first transfer atmosphere section 90 fills the first transfer chamber 45 with nitrogen gas. The cleaning atmosphere section 95 is provided in the cleaning chamber 65. The cleaning atmosphere section 95 fills the cleaning chamber 65 with nitrogen gas. The second transfer atmosphere section 100 is provided in the second transfer chamber 70. The second transfer atmosphere section 100 fills the second transfer chamber 70 with nitrogen gas.

[0034] Although not shown, the control unit 105 includes a CPU (Central Processing Unit) and a memory. The control unit 105 is connected to the gate valves 13, 50, 51, and 52, the moving unit 38 of the temporary support arm 36, the opening and closing valves of the atmospheric units 85, 90, 95, and 100, and a pressure gauge. The control unit 105 controls the gate valves 13, 50, 51, and 52, the moving unit 38, and the opening and closing valves of the atmospheric units 85, 90, 95, and 100.

[0035] Next, the operation of the vapor phase growth apparatus 1 configured as above will be described. FIG. 5 is a flow chart showing the steps of the vapor phase growth apparatus 1. 1, a plurality of wafer pockets 19b of a susceptor cover 19A in the MOCVD reactor 16 holds wafers WB after a semiconductor thin film has been formed thereon by the MOCVD reactor 16. When a semiconductor thin film is formed on the wafers WB, reaction products are generated in the MOCVD reactor 16. Examples of reaction products include amorphous semiconductor thin films (such as gallium nitride) and unreacted organometallic components. In the first transfer chamber 45, a support surface 62a of the first robot arm 55 supports a reactor member 25 having a susceptor cover 19B. A wafer WA is held in a wafer pocket 19b of the susceptor cover 19B before a semiconductor thin film is formed by the MOCVD reactor 16. The gate valves 13, 50, 51 and 52 are closed.

[0036] The control unit 105 previously fills the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 with nitrogen gas by the atmosphere units 85, 90, 95, and 100. At that time, the control unit 105 makes the pressure of the nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere unit 100 higher than the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90. Furthermore, the control unit 105 makes the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 higher than the pressures of the nitrogen gas in the reaction chamber 10 and the cleaning chamber 65 by the reaction atmosphere unit 85 and the cleaning atmosphere unit 95, respectively. For example, the pressure of the nitrogen gas in the reaction chamber 10 is adjusted by the control unit 105 opening and closing an on-off valve based on the pressure in the reaction chamber 10 measured by a pressure gauge.

[0037] 6, the reactor member 25 having the susceptor cover 19B in the first transfer chamber 45 is replaced with the reactor member 25 having the susceptor cover 19A in the reaction chamber 10. That is, step S11 of loading the reactor member 25 and the wafer WA into the MOCVD reactor 16 and step S13 of unloading the reactor member 25 and the wafer WB in the MOCVD reactor 16 in FIG. At this time, for example, the chamber lid 27 is moved upward relative to the chamber body 26 of the MOCVD reactor 16. As shown in Fig. 3, the control unit 105 causes the multiple moving units 38 to lock the susceptor cover 19A and ceiling plate 20 in the reaction chamber 10 with the steps 37a, 37b of the multiple locking pieces 37, and the susceptor cover 19A and ceiling plate 20 attached to the MOCVD reactor 16 are retracted upward within the reaction chamber 10.

[0038] The control unit 105 opens the gate valve 13, and changes the direction of the first robot arm 55 so that it faces the reaction chamber 10. The first robot arm 55 transports the susceptor cover 19B and the ceiling plate 20 supported by the support surface 62a into the reaction chamber 10 through the opening 11a in the side wall 11, and attaches them to the MOCVD reactor 16.

[0039] The susceptor cover 19A and the ceiling plate 20 supported by the multiple locking pieces 37 are supported by the support surface 62a of the first robot arm 55. The first robot arm 55 moves the supported susceptor cover 19A and ceiling plate 20 into the first transfer chamber 45. Next, as shown in FIG. 7, the control unit 105 opens the gate valve 52, and causes the second robot arm 77 to move the wafer WB held by the susceptor cover 19A in the first transfer chamber 45 to the cassette 73. In parallel with steps S11 and S13, as shown in FIG. 4, the first robot arm 55 carries the reactor member 25 having the susceptor cover 19A supported by the support surface 62a into the dry cleaning furnace 66 in the cleaning chamber 65 (step S16). Next, a semiconductor thin film is formed on the wafer WA held by the susceptor cover 19B in the MOCVD reactor 16 to obtain a wafer WB (step S12). The formation of a semiconductor thin film in the MOCVD reactor 16 is performed by a known procedure. In parallel with step S12, the reactor member 25 having the susceptor cover 19A is cleaned in the dry cleaning furnace 66 (step S17).

[0040] Next, as shown in FIG. 6, the reactor member 25 having the susceptor cover 19A cleaned in the dry cleaning furnace 66 is supported by the support surface 62a by the first robot arm 55 and carried out into the first transfer chamber 45 (step S18). The second robot arm 77 holds the wafer WA in the cassette 74, on which a semiconductor thin film has not yet been formed, in the wafer pocket 19b of the susceptor cover 19A. Next, the susceptor cover 19A in the first transfer chamber 45 is replaced with the susceptor cover 19B in the reaction chamber 10. That is, step S11 of loading the reactor member 25 and the wafer WA into the MOCVD reaction chamber 16 and step S13 of unloading the reactor member 25 and the wafer WB in FIG.

[0041] By performing steps S11 to S18 performed on susceptor cover 19A also on susceptor cover 19B with the steps shifted, semiconductor thin films can be formed alternately on wafers WA held by susceptor covers 19A and 19B.

[0042] As described above, in the vapor phase growth apparatus 1 of this embodiment, the wafer W held in the reactor member 25 can be cooled by the MOCVD reactor 16, and the reactor member 25 can be cleaned by the dry cleaning furnace 66. The reaction chamber 10 housing the MOCVD reactor 16 and the cleaning chamber 65 housing the dry cleaning furnace 66 are disposed adjacent to each other with respect to the first transfer chamber 45 housing the first robot arm 55, and can each communicate with the first transfer chamber 45. Therefore, for example, the distance between the reaction chamber 10 and the first transfer chamber 45 and the distance between the cleaning chamber 65 and the first transfer chamber 45 are shorter than when other chambers are disposed between the reaction chamber 10 and the first transfer chamber 45 and between the cleaning chamber 65 and the first transfer chamber 45. Therefore, the first robot arm 55 can automatically transfer the wafer W and the reactor member 25 to the MOCVD reactor 16 and automatically transfer the reactor member 25 to the dry cleaning furnace 66 through the communicating portion.

[0043] The vapor phase growth apparatus 1 includes a reaction atmosphere section 85, a first transfer atmosphere section 90, and a control section 105. Therefore, the reaction chamber 10 can be filled with nitrogen gas by the reaction atmosphere section 85, and the first transfer atmosphere section 90 can be filled with nitrogen gas by the first transfer chamber 45. Then, the control unit 105 makes the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 higher than the pressure of the nitrogen gas in the reaction chamber 10 by the reaction atmosphere unit 85. Therefore, the nitrogen gas flows from the first transfer chamber 45 toward the reaction chamber 10 through the part where the first transfer chamber 45 and the reaction chamber 10 communicate with each other. This makes it possible to prevent the reaction product generated in the MOCVD reaction furnace 16 from flowing into the first transfer chamber 45 through the communication part.

[0044] If the vapor phase growth apparatus did not include the first transfer chamber 45 and the first robot arm 55, the reactor member 25 would be transferred between the MOCVD reactor 16 and the dry cleaning furnace 66 by an operator. The reactor member 25 that was transferred would be exposed to the atmosphere. For this reason, the reactor member 25 needed to be baked before step S12, which is the growth of a semiconductor thin film on the reactor member 25. In the vapor phase growth apparatus 1 of the present embodiment, the reactor member 25 is not exposed to the atmosphere in the first transfer chamber 45, and therefore there is no need to bake the reactor member 25. Therefore, the cycle time required to process the wafer W can be made shorter than that of the conventional vapor phase growth apparatus.

[0045] The vapor phase growth apparatus 1 includes a cleaning atmosphere section 95. By filling the cleaning chamber 65 with nitrogen gas by the cleaning atmosphere section 95, it is possible to prevent the reactor member 25 from being exposed to the atmosphere not only in the first transfer chamber 45 and the reaction chamber 10 but also in the cleaning chamber 65.

[0046] The vapor phase growth apparatus 1 is equipped with a second transfer chamber 70 and a second transfer atmosphere section 100, and the pressure of nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere section 100 is made higher than the pressure of nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere section 90. The second robot arm 77 can transfer the wafer W between the first transfer chamber 45 and the second transfer chamber 70 through a portion where the second transfer chamber 70 and the first transfer chamber 45 communicate with each other. The second transfer atmosphere section 100 can fill the second transfer chamber 70 with nitrogen gas. At this time, the control unit 105 makes the pressure of the nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere unit 100 higher than the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90. Therefore, it is possible to prevent the reaction product generated in the MOCVD reaction furnace 16 from flowing into the second transfer chamber 70 through the first transfer chamber 45.

[0047] There are cases where the dew point of nitrogen gas is -40°C or lower and the nitrogen gas does not contain oxygen gas. In this case, in addition to preventing moisture in the nitrogen gas from adhering to the wafer W, it is possible to prevent the wafer W and the like from being oxidized in the nitrogen gas atmosphere. The first robot arm 55 can change its own orientation so as to face either one of the reaction chamber 10, the cleaning chamber 65, and the second transfer chamber 70, with the support surface 62a facing upward. Therefore, it is possible to prevent the reactor member 25 supported on the support surface 62a from falling off the support surface 62a. In this state, the orientation of the first robot arm 55 can be changed so as to face either one of the reaction chamber 10, the cleaning chamber 65, and the second transfer chamber 70.

[0048] Although one embodiment of the present invention has been described in detail above with reference to the drawings, the specific configuration is not limited to this embodiment, and changes, combinations, deletions, etc. of the configuration are also included within the scope that does not deviate from the gist of the present invention. For example, in the above embodiment, the reaction chamber 10, the first transfer chamber 45, and the cleaning chamber 65 are arranged in this order in the first direction X. However, the cleaning chamber may be arranged on the opposite side of the first transfer chamber 45 to the second transfer chamber 70, and the reaction chamber 10, the first transfer chamber 45, and the cleaning chamber may be arranged in an L-shape in plan view.

[0049] In the embodiment, the control unit 105 may control the pressure of the nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere unit 100 to be equal to or lower than the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90. The control unit 105 may control the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 to be equal to or lower than the pressure of the nitrogen gas in the reaction chamber 10 and the cleaning chamber 65 by the reaction atmosphere unit 85 and the cleaning atmosphere unit 95.

[0050] The support surface 62a of the first robot arm 55 may face laterally. The vapor phase growth apparatus 1 does not necessarily have to include the second transfer chamber 70, the atmospheric units 85, 90, 95, 100, and the control unit 105. [Explanation of symbols]

[0051] 1. Vapor phase growth equipment 10 Reaction chamber 16 MOCVD reactor 25 Reactor components 45 Transport Room 1 55 First robot arm (first transport unit) 62a Support surface 65 Cleaning Room 66 Dry cleaning furnace 70 Transport Room No. 2 85 Reaction atmosphere section 90 First transport atmosphere section 95 Cleaning Atmosphere Section 100 Second conveying atmosphere section 105 Control section W wafer

Claims

1. a reaction chamber housing an MOCVD reactor for supporting a wafer on a reactor member; a first transfer chamber that accommodates a first transfer unit that transfers the reactor member and the wafer, the first transfer chamber being disposed adjacent to the reaction chamber and capable of communicating with the reaction chamber; a cleaning chamber that accommodates a dry cleaning furnace for cleaning the reactor components, the cleaning chamber being disposed adjacent to the first transfer chamber and capable of communicating with the first transfer chamber; A vapor phase growth apparatus comprising:

2. a reaction atmosphere section for filling the reaction chamber with an inert gas; a first transfer atmosphere section for filling the first transfer chamber with the inert gas; A control unit that controls the reaction atmosphere unit and the first transfer atmosphere unit; Equipped with 2. The vapor phase growth apparatus according to claim 1, wherein the control unit makes a pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit higher than a pressure of the inert gas in the reaction chamber by the reaction atmosphere unit.

3. 3. The vapor phase growth apparatus according to claim 2, further comprising a cleaning atmosphere section for filling the cleaning chamber with an inert gas.

4. a second transfer chamber that accommodates a second transfer unit that transfers the wafer between the first transfer chamber and the second transfer chamber, the second transfer chamber being disposed adjacent to the first transfer chamber and capable of communicating with the first transfer chamber; a second transfer atmosphere section for filling the second transfer chamber with the inert gas; Equipped with 3. The vapor phase growth apparatus according to claim 2, wherein the control unit sets a pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit to be higher than a pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit.

5. 3. The vapor phase growth apparatus according to claim 2, wherein the inert gas has a dew point of −40° C. or lower and does not contain oxygen gas.

6. 3. The vapor phase growth apparatus according to claim 1, wherein the first transport part is capable of changing its own orientation so as to face either the reaction chamber or the cleaning chamber with a support surface that supports the reactor member facing upward.

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