Flow rate adjustment method in substrate processing device and substrate processing device

Abstract

To suppress variations in processing results between multiple liquid processing parts.SOLUTION: A flow rate adjustment method is the flow rate adjustment method in a substrate processing device which includes multiple liquid processing parts that perform liquid processing by supplying a mixture of sulfuric acid and hydrogen peroxide to a substrate and comprises a discharge step, a measurement step, a generation step, and an adjustments step. The discharge step discharges the mixture under multiple discharge conditions in a first liquid processing part and a second liquid processing part. The measurement step measures the temperature of the mixture for each processing condition by using a temperature sensor. The generation step obtains a correlation function between the temperature of the mixture and the flow rate of sulfuric acid included in the discharge conditions for each of the first liquid processing part and the second liquid processing part on the basis of the temperature of the mixture and generates a relational expression that indicates the flow rate of sulfuric acid in a case where the temperature of the mixture becomes the same between the first liquid processing part and the second liquid processing part. The adjustment step adjusts the flow rate of sulfuric acid before mixing to the mixture in the second liquid processing part by using the relational expression.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a flow rate adjusting method in a substrate processing apparatus and the substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus that performs liquid processing by supplying a sulfuric acid hydrogen peroxide mixture (SPM) liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to a substrate such as a semiconductor wafer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-16497 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of suppressing variation in processing results among a plurality of liquid processing units. [Means for solving the problem]

[0005] A flow rate adjustment method according to one embodiment of the present disclosure is a flow rate adjustment method in a substrate processing apparatus having a plurality of liquid processing sections for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate to perform liquid processing, and includes a discharging step, a measuring step, a generating step, and an adjusting step. The discharging step discharges the mixed liquid under a plurality of discharge conditions in a first liquid processing section and a second liquid processing section selected from the plurality of liquid processing sections. The measuring step measures the temperature of the mixed liquid for each discharge condition using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section. The generating step obtains a correlation function showing the correlation between the temperature of the mixed liquid and the flow rate of sulfuric acid included in the discharge conditions for each of the first liquid processing section and the second liquid processing section based on the measured temperature of the mixed liquid, and generates a relational expression showing the relationship of the flow rate of sulfuric acid when the temperature of the mixed liquid is the same between the first liquid processing section and the second liquid processing section based on the correlation function. The adjusting step adjusts the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing section using the relational expression. Effect of the Invention

[0006] According to the present disclosure, it is possible to suppress variation in processing results among a plurality of liquid processing units. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram illustrating a configuration of a processing unit according to the embodiment. [Diagram 3] FIG. 3 is a diagram showing a specific configuration example of a processing liquid supply system in the substrate processing system according to the embodiment. [Figure 4] FIG. 4 is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment. [Diagram 5] FIG. 5 is a diagram for explaining an example of derivation of the correlation function. [Figure 6] FIG. 6 is a diagram for explaining an example of generating a relational expression. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, a flow rate adjusting method for a substrate processing apparatus and a substrate processing apparatus according to the present disclosure (hereinafter, referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to the embodiment.

[0009] Conventionally, there is known a substrate processing apparatus that performs liquid processing by supplying an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to a substrate such as a semiconductor wafer. Some substrate processing apparatuses include a plurality of liquid processing sections that supply the SPM liquid to the substrate and perform liquid processing.

[0010] However, in a substrate processing apparatus equipped with multiple liquid processing units, the processing results may vary among the multiple liquid processing units due to the variation in temperature of the SPM liquid discharged from each of the multiple liquid processing units. The temperature of the SPM liquid among the multiple liquid processing units depends on the flow rates of sulfuric acid and hydrogen peroxide before being mixed with the SPM liquid in each liquid processing unit, in particular the flow rate of sulfuric acid before being mixed with the SPM liquid.

[0011] Therefore, in order to suppress the variation in temperature of the SPM liquid among a plurality of liquid treatment sections, it is desirable to provide a technique for adjusting the flow rate of sulfuric acid before it is mixed into the SPM liquid.

[0012] The substrate processing apparatus according to the embodiment discharges the SPM liquid under a plurality of discharge conditions in a first liquid processing section and a second liquid processing section selected from a plurality of liquid processing sections. The substrate processing apparatus according to the embodiment also measures the temperature of the SPM liquid for each discharge condition for the first liquid processing section and the second liquid processing section using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section.

[0013] Furthermore, the substrate processing apparatus according to the embodiment determines a correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid included in the discharge conditions for each of the first and second liquid processing units based on the measured temperature of the SPM liquid. The substrate processing apparatus according to the embodiment generates a relational expression from the correlation function that indicates the relationship between the flow rates of sulfuric acid when the temperature of the SPM liquid is the same between the first and second liquid processing units. The substrate processing apparatus according to the embodiment then uses the relational expression to adjust the flow rate of sulfuric acid before it is mixed with the SPM liquid in the second liquid processing unit.

[0014] In this way, in the substrate processing apparatus according to the embodiment, a correlation between the temperature of the SPM liquid and the flow rate of sulfuric acid is calculated for each liquid processing unit, and the flow rate of sulfuric acid before mixing with the SPM liquid is adjusted in each liquid processing unit using the relationship of the flow rates of sulfuric acid that results in the same temperature of the SPM liquid among the plurality of liquid processing units. Therefore, according to the substrate processing apparatus according to the embodiment, it is possible to suppress the variation in temperature of the SPM liquid among the plurality of liquid processing units, and therefore the variation in processing results among the plurality of liquid processing units.

[0015] <Outline of the substrate processing system> A schematic configuration of a substrate processing system 1 (an example of a substrate processing apparatus) according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0016] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0017] The carry-in / out station 2 includes a carrier placement section 11 and a transport section 12. A plurality of carriers C are placed on the carrier placement section 11, each of which accommodates a plurality of semiconductor wafers W (hereinafter referred to as wafers W (an example of substrates)) in a horizontal state.

[0018] The transfer section 12 is provided adjacent to the carrier placement section 11, and includes therein a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the substrate holding mechanism.

[0019] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16 (an example of a liquid processing section). The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0020] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the substrate holding mechanism.

[0021] The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0022] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading out and executing the programs stored in the storage unit 19.

[0023] Such a program may be recorded in a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0024] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement section 11, and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then removed from the transfer section 14 by the substrate transfer device 17 in the processing station 3, and carried into the processing unit 16.

[0025] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13.

[0026] <Processing unit overview> Next, the configuration of the processing unit 16 will be described with reference to Fig. 2. Fig. 2 is a diagram showing the configuration of the processing unit 16 according to an embodiment. The processing unit 16 of this embodiment supplies an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to the wafer W. As shown in Fig. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a nozzle 40 (an example of a discharge part), a collection cup 50, a temperature sensor 80, and an SPM supply mechanism 70.

[0027] The chamber 20 accommodates the substrate holding mechanism 30, the nozzle 40, the collection cup 50, and the temperature sensor 80. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0028] The substrate holding mechanism 30 includes a holding part 31, a support part 32, and a drive part 33. The holding part 31 holds the wafer W horizontally. The support part 32 is a member extending in the vertical direction, and has a base end rotatably supported by the drive part 33, and supports the holding part 31 horizontally at its tip end. The drive part 33 rotates the support part 32 around a vertical axis. The substrate holding mechanism 30 rotates the support part 32 using the drive part 33 to rotate the holding part 31 supported by the support part 32, thereby rotating the wafer W held by the holding part 31.

[0029] The nozzle 40 supplies the SPM liquid to the wafer W. The nozzle 40 is connected to an SPM supply mechanism 70, which will be described later, and ejects the SPM liquid supplied from the SPM supply mechanism 70 onto the wafer W.

[0030] The collection cup 50 is disposed so as to surround the holder 31, and collects the SPM liquid scattered from the wafer W due to the rotation of the holder 31. A drainage port 51 is formed in the bottom of the collection cup 50, and the SPM liquid collected by the collection cup 50 is discharged from the drainage port 51 to the outside of the processing unit 16. In addition, an exhaust port 52 is formed in the bottom of the collection cup 50, which discharges gas supplied from the FFU 21 to the outside of the processing unit 16.

[0031] The temperature sensor 80 is disposed adjacent to the nozzle 40 above the wafer W, and measures the temperature of the SPM liquid on the surface of the wafer W. Since the temperature sensor 80 is provided in each of the multiple processing units 16, it is possible to measure the temperature of the SPM liquid on the surface of the wafer W for each of the multiple processing units 16.

[0032] <Example of processing liquid supply system configuration> Next, a specific configuration example of a processing liquid supply system in the substrate processing system 1 according to the embodiment will be described with reference to Fig. 3. Fig. 3 is a diagram showing a specific configuration example of the processing liquid supply system in the substrate processing system 1 according to the embodiment.

[0033] 3, the SPM supply mechanism 70 includes, as a supply system for sulfuric acid (H2SO4), a sulfuric acid supply source 71, a sulfuric acid supply path 72 (an example of a first path), a flow meter 73, a flow regulator 74, and a valve 75. The sulfuric acid supply source 71 supplies sulfuric acid at a temperature set by the control unit 18. The sulfuric acid supply path 72 connects the sulfuric acid supply source 71 to a mixer 79 described below, and the sulfuric acid supplied from the sulfuric acid supply source 71 flows through the sulfuric acid supply path 72.

[0034] The flow meter 73 is provided in the sulfuric acid supply path 72 and measures the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72. The flow regulator 74 adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72. Specifically, the flow regulator 74 adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 based on a set flow rate set by the control unit 18 so that the measurement value by the flow meter 73 approaches the set flow rate. The valve 75 opens and closes the sulfuric acid supply path 72.

[0035] Furthermore, SPM supply mechanism 70 includes a hydrogen peroxide (H2O2) supply system including a hydrogen peroxide supply source 91, a hydrogen peroxide supply path 92 (an example of a second path), a flow meter 93, a flow regulator 94, and a valve 95. Hydrogen peroxide supply source 91 supplies hydrogen peroxide at room temperature (room temperature). Hydrogen peroxide supply path 92 connects hydrogen peroxide supply source 91 to a mixer 79, which will be described later, and hydrogen peroxide supplied from hydrogen peroxide supply source 91 flows through it.

[0036] Flow meter 93 is provided in hydrogen peroxide supply path 92 and measures the flow rate of hydrogen peroxide flowing through hydrogen peroxide supply path 92. Flow regulator 94 adjusts the flow rate of hydrogen peroxide flowing through hydrogen peroxide supply path 92. Specifically, flow regulator 94 adjusts the flow rate of hydrogen peroxide flowing through hydrogen peroxide supply path 92 based on a set flow rate set by control unit 18 so that the value measured by flow meter 93 approaches the set flow rate. Valve 95 opens and closes hydrogen peroxide supply path 92.

[0037] The SPM supply mechanism 70 also includes a mixer 79. The mixer 79 mixes sulfuric acid supplied from the sulfuric acid supply path 72 and hydrogen peroxide supplied from the hydrogen peroxide supply path 92 at a preset mixing ratio to generate a mixed liquid, that is, an SPM liquid. The generated SPM liquid is supplied to the nozzle 40 and ejected from the nozzle 40.

[0038] <Flow rate adjustment process> Next, the flow rate adjustment process of sulfuric acid before being mixed into the SPM liquid, which is executed by the control unit 18 according to the embodiment, will be described with reference to Fig. 4. Fig. 4 is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment.

[0039] 4 is performed, for example, before performing substrate processing (liquid processing) on ​​wafer W using processing unit 16. Note that the flow rate adjustment process shown in Fig. 4 may be performed at any timing, such as a specified timing or periodic timing, other than the timing before performing substrate processing (liquid processing).

[0040] First, the control unit 18 selects a reference processing unit (an example of a first liquid processing unit) and a target processing unit (an example of a second liquid processing unit) from the multiple processing units 16 (step S101). The reference processing unit is a processing unit 16 among the multiple processing units 16 that serves as a reference for adjusting the flow rate of sulfuric acid. The target processing unit is a processing unit 16 among the multiple processing units 16 that is a target for adjusting the flow rate of sulfuric acid. In the following description, the reference processing unit is referred to as "processing unit 16R" and the target processing unit is referred to as "processing unit 16O."

[0041] Next, the control unit 18 sets one of a plurality of discharge conditions used when discharging the SPM liquid in the processing units 16R, 16O to the processing units 16R, 16O (step S102). Each of the plurality of discharge conditions is a condition consisting of the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide. The plurality of discharge conditions differ from each other in at least one of the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide. The control unit 18 sets the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide included in one of the plurality of discharge conditions to the sulfuric acid supply source 71, the flow rate regulator 74, and the flow rate regulator 94 in the processing units 16R, 16O, respectively.

[0042] The control unit 18 causes the substrate transfer device 17 (see FIG. 1) to load the wafer W into the chambers 20 of both of the processing units 16O, 16R, and holds the wafer W using the holding unit 31 of the substrate holding mechanism 30. The wafer W may be a product wafer or a dummy wafer for flow rate adjustment. Thereafter, the control unit 18 rotates the wafer W in the processing units 16O, 16R by rotating the holding unit 31 about a vertical axis using the driving unit 33.

[0043] Next, with one of the multiple processing conditions set in processing units 16R, 16O, controller 18 opens valves 75, 95 in processing units 16R, 16O to eject SPM liquid from nozzle 40 onto wafer W (step S103). When ejection of SPM liquid onto wafer W begins, flow regulator 74 of processing units 16R, 16O adjusts the flow rate of sulfuric acid flowing through sulfuric acid supply path 72 so that the measurement value by flowmeter 73 approaches the set flow rate. In addition, flow regulator 94 of processing units 16R, 16O adjusts the flow rate of hydrogen peroxide flowing through hydrogen peroxide supply path 92 so that the measurement value by flowmeter 93 approaches the set flow rate.

[0044] Next, the control unit 18 acquires the temperature of the SPM liquid in the processing unit 16R and the temperature of the SPM liquid in the processing unit 16O from the temperature sensors 80 of each of the processing units 16R, 16O (step S104). The control unit 18 acquires the temperature of the SPM liquid in the processing unit 16R and the temperature of the SPM liquid in the processing unit 16O for each discharge condition.

[0045] Next, the control unit 18 determines whether or not all the discharge conditions have been set in the processing units 16R and 16O (step S105), and if the settings have not been completed (step S105 No), sets the next discharge condition in the processing units 16R and 16O (step S106). Then, the process returns to step S103.

[0046] On the other hand, when all the discharge conditions have been set (Yes in step S105), the control unit 18 calculates a correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid included in the discharge conditions for each of the processing units 16R and 16O based on the temperature of the SPM liquid (step S107).

[0047] 5 is a diagram for explaining an example of derivation of the correlation function. As a result of intensive research, the inventors of the present application found that the relationship between the temperature of the SPM liquid in each processing unit 16, the temperature of the sulfuric acid before mixing, and the flow rates of the sulfuric acid and hydrogen peroxide before mixing can be expressed by the following formula (1). (Temperature of SPM liquid in each processing unit 16) = a + b (temperature of sulfuric acid before mixing) + c (flow rate of hydrogen peroxide before mixing) / {(flow rate of sulfuric acid before mixing) + (flow rate of hydrogen peroxide before mixing)} (1) Here, a, b, and c are coefficients determined by analysis, experiment, etc.

[0048] From formula (1), it can be seen that the temperature of the SPM liquid in each processing unit 16 forms a correlation with the inverse of the flow rate of sulfuric acid (sulfuric acid flowing through sulfuric acid supply path 72) before being mixed with the SPM liquid.

[0049] Therefore, for each of the processing units 16R, 16O, the control unit 18 plots the temperature of the SPM liquid and the flow rate of sulfuric acid included in the corresponding discharge conditions on a two-dimensional plane whose dimensions are the temperature of the SPM liquid in each processing unit 16 and the inverse of the flow rate of sulfuric acid before mixing with the SPM liquid. Then, for each of the processing units 16R, 16O, the control unit 18 obtains an approximation line when the temperature of the SPM liquid and the flow rate of sulfuric acid are plotted on the two-dimensional plane as a correlation function between the temperature of the SPM liquid in each processing unit 16 and the flow rate of sulfuric acid before mixing with the SPM liquid. Specifically, the control unit 18 can obtain the correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid before mixing with the SPM liquid for each of the processing units 16R, 16O using the approximation line represented by the following formulas (2) and (3). (Temperature of SPM liquid in processing unit 16R) = α 0 +α 1 1 / (flow rate of sulfuric acid before mixing) (2) (Temperature of SPM liquid in processing unit 16O) = α 2 +α 3 1 / (flow rate of sulfuric acid before mixing) (3)

[0050] 5, correlation line 110 is a line that represents the correlation function between the temperature of the SPM liquid in processing unit 16R and the flow rate of sulfuric acid before being mixed into the SPM liquid (i.e., the correlation function of formula (2)). Also in Fig. 5, correlation line 111 is a line that represents the correlation function between the temperature of the SPM liquid in processing unit 16O and the flow rate of sulfuric acid before being mixed into the SPM liquid (i.e., the correlation function of formula (3)).

[0051] Returning to the explanation of Fig. 4, next, control unit 18 generates a relational equation indicating the relationship between the flow rates of sulfuric acid when the temperatures of the SPM liquid are the same between processing unit 16R and processing unit 16O, from the obtained correlation function (correlation lines 110, 111) (step S108).

[0052] 6 is a diagram for explaining an example of generating a relational expression. The control unit 18 acquires the flow rate of sulfuric acid when the temperature of the SPM liquid is the same between the processing unit 16R and the processing unit 16O on the correlation lines 110, 111 (see FIG. 5). For example, the control unit 18 acquires values ​​Fr1, Fo1 corresponding to the temperature T1 of the SPM liquid on the correlation lines 110, 111 (see FIG. 5). The control unit 18 also acquires values ​​Fr2, Fo2 corresponding to the temperature T2 of the SPM liquid on the correlation lines 110, 111 (see FIG. 5).

[0053] Next, the control unit 18 plots the values ​​Fr1, Fo1 and the values ​​Fr2, Fo2 on a two-dimensional plane having the reciprocal of the flow rate of sulfuric acid before mixing in the processing unit 16R and the reciprocal of the flow rate of sulfuric acid before mixing in the processing unit 16O as the respective dimensions, as shown in Fig. 6. Then, the control unit 18 generates, as a relational equation, a mathematical expression that represents an approximation straight line when the values ​​Fr1, Fo1 and the values ​​Fr2, Fo2 are plotted on the two-dimensional plane. Specifically, the control unit 18 can generate a relational equation that indicates the relationship between the flow rates of sulfuric acid when the temperature of the SPM liquid is the same between the processing unit 16R and the processing unit 16O, using the approximation straight line represented by the following mathematical expression (4). 1 / (flow rate of sulfuric acid before mixing in treatment unit 16R) =β 0 +β 1 1 / (flow rate of sulfuric acid before mixing in treatment unit 16O) (4)

[0054] Returning to the explanation of FIG. 4, next, the control unit 18 uses the relational expression to adjust the flow rate of sulfuric acid before being mixed into the SPM liquid in the processing unit 16O. That is, the control unit 18 applies a "prescribed value" set for the set flow rate in the flow rate adjuster 74 of the processing unit 16R to the relational expression to calculate an adjustment value for the set flow rate in the flow rate adjuster 74 of the processing unit 16O (step S109). As the "prescribed value", for example, a value prescribed by the process recipe for the substrate processing (liquid processing) for the wafer W can be used. The prescribed value may be a value commonly set for the set flow rates in the flow rate adjusters 74 of the processing units 16R and 16O.

[0055] Next, the control unit 18 changes the set flow rate in the flow rate regulator 74 of the processing unit 16O from the "prescribed value" to the adjustment value calculated in step S109 (step S110). When the set flow rate is changed, the flow rate regulator 74 of the processing unit 16O adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the value measured by the flow meter 73 approaches the changed set flow rate (i.e., the adjustment value). Here, the adjustment value is a value calculated from a relational expression that indicates the relationship of the flow rates of sulfuric acid when the temperature of the SPM liquid is the same between the processing unit 16R and the processing unit 16O. Therefore, the control unit 18 can adjust the flow rate of sulfuric acid (i.e., sulfuric acid before being mixed with the SPM liquid) flowing through the sulfuric acid supply path 72 of the processing unit 16O so that the temperature of the SPM liquid is the same between the processing unit 16R and the processing unit 16O.

[0056] In this way, control unit 18 determines the correlation between the temperature of the SPM liquid and the flow rate of sulfuric acid for each of processing units 16R, 16O, and generates a relational equation for the flow rate of sulfuric acid that will result in the same temperature of the SPM liquid between the processing units. Control unit 18 then uses this relational equation to adjust the flow rate of sulfuric acid before it is mixed into the SPM liquid in processing unit 16O. Therefore, it is possible to suppress the variation in temperature of the SPM liquid between processing unit 16R and processing unit 16O, and therefore it is possible to suppress the variation in the processing results between processing unit 16R and processing unit 16O.

[0057] After changing the set flow rate in the flow rate regulator 74 of the processing unit 16O, the control unit 18 corrects the measurement value of the flow meter 73 of the processing unit 16O to a "prescribed value" (step S111). This makes it possible to cancel errors in the measurement value of the flow meter 73 caused by individual differences in the flow meters 73 between the processing units 16.

[0058] As described above, the flow rate adjustment method according to the embodiment is a flow rate adjustment method in a substrate processing apparatus (for example, substrate processing system 1) having a plurality of liquid processing sections (for example, processing units 16) that perform liquid processing by supplying a mixed liquid of sulfuric acid and hydrogen peroxide (for example, SPM liquid) to a substrate (for example, wafer W), and includes a discharging step, a measuring step, a generating step, and an adjusting step. The discharging step discharges the mixed liquid under a plurality of discharge conditions in a first liquid processing section (for example, processing unit 16R) and a second liquid processing section (for example, processing unit 16O) selected from the plurality of liquid processing sections. The measuring step measures the temperature of the mixed liquid for each discharge condition using a temperature sensor (for example, temperature sensor 80) provided in each of the first liquid processing section and the second liquid processing section. The generating step determines a correlation function (for example, formulas (2) and (3)) that indicates the correlation between the temperature of the mixed liquid and the flow rate of sulfuric acid included in the discharge conditions for each of the first and second liquid processing units based on the measured temperature of the mixed liquid, and generates a relational equation (for example, formula (4)) that indicates the relationship between the flow rates of sulfuric acid when the temperature of the mixed liquid is the same between the first and second liquid processing units based on the correlation function. The adjusting step uses the relational equation to adjust the flow rate of sulfuric acid before mixing into the mixed liquid in the second liquid processing unit. As a result, the flow rate adjustment method of the embodiment can suppress variation in processing results among multiple liquid processing units.

[0059] Each of the liquid processing units may have a first path (for example, sulfuric acid supply path 72), a second path (for example, hydrogen peroxide supply path 92), a mixer (for example, mixer 79), a discharger (for example, nozzle 40), a flow meter (for example, flow meter 73), and a flow regulator (for example, flow regulator 74). The first path passes sulfuric acid. The second path passes hydrogen peroxide. The mixer mixes the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid. The discharger discharges the mixed liquid generated by the mixer onto the substrate. The flow meter is provided in the first path and measures the flow rate of sulfuric acid passing through the first path. The flow regulator is provided in the first path and adjusts the flow rate of sulfuric acid passing through the first path based on a set flow rate so that a value measured by the flow meter approaches the set flow rate. The adjusting step may also include applying a specified value set for the set flow rate in the flow rate regulator of the first liquid processing unit to the relational expression to calculate an adjusted value for the set flow rate in the flow rate regulator of the second liquid processing unit. The adjusting step may also include adjusting the flow rate of the sulfuric acid flowing through the first path of the second liquid processing unit by changing the set flow rate in the flow rate regulator of the second liquid processing unit from the specified value to the adjusted value. In this way, the flow rate adjusting method according to the embodiment can suppress variation in processing results among a plurality of liquid processing units.

[0060] In addition, the measuring step may measure the temperature of the mixed liquid on the surface of the substrate using a temperature sensor disposed adjacent to the discharge unit. In this way, according to the flow rate control method of the embodiment, the temperature of the mixed liquid on the surface of the substrate can be easily measured.

[0061] <Modification> In the above embodiment, the temperature sensor 80 is disposed adjacent to the nozzle 40, but the position of the temperature sensor 80 is not limited to this. For example, the temperature sensor 80 may be disposed in the nozzle 40 or in a pipe connecting the mixing unit 79 and the nozzle 40. In this case, the measuring step may measure the temperature of the SPM liquid before it is discharged from the nozzle 40 using the temperature sensor 80 disposed in the nozzle 40 or in a pipe connecting the mixing unit 79 and the nozzle 40. This makes it possible to easily measure the temperature of the mixed liquid before it is discharged.

[0062] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0063] 1. Substrate Processing System 16, 16O, 16R Processing Unit 18 Control Unit 19 Memory section 40 Nozzles 72 Sulfuric acid supply route 73 Flow meter 74 Flow regulator 92 Hydrogen peroxide supply pathway 79 Mixing section 80 Temperature Sensor W wafer

Claims

1. 1. A flow rate adjusting method for a substrate processing apparatus including a plurality of liquid processing sections for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid processing, comprising: discharging the mixed liquid under a plurality of discharging conditions in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units; measuring a temperature of the mixed liquid for each of the discharge conditions using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section; determining a correlation function between the temperature of the mixed liquid and a flow rate of sulfuric acid included in the discharge conditions for each of the first liquid processing section and the second liquid processing section based on the measured temperature of the mixed liquid, and generating a relational expression that indicates a relationship between the flow rates of sulfuric acid when the temperature of the mixed liquid is the same between the first liquid processing section and the second liquid processing section from the correlation function; adjusting a flow rate of sulfuric acid before being mixed into the mixed liquid in the second liquid treatment unit by using the relational expression; A flow rate adjusting method comprising:

2. Each of the plurality of liquid treatment sections includes: a first path through which sulfuric acid flows; a second pathway for passing hydrogen peroxide; and a mixing section that mixes the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid; a discharge unit that discharges the mixed liquid generated by the mixing unit onto a substrate; a flow meter provided in the first path and configured to measure a flow rate of sulfuric acid flowing through the first path; a flow rate regulator that is provided in the first path and that adjusts the flow rate of the sulfuric acid flowing through the first path based on a set flow rate that is set so that a value measured by the flow meter approaches the set flow rate; having The adjusting step includes: applying a specified value set for the set flow rate in the flow rate regulator of the first liquid treatment section to the relational expression to calculate an adjustment value for the set flow rate in the flow rate regulator of the second liquid treatment section; The flow rate of the sulfuric acid flowing through the first path of the second liquid treatment section is adjusted by changing the set flow rate in the flow rate regulator of the second liquid treatment section from the specified value to the adjusted value. The flow rate adjusting method according to claim 1 .

3. The adjusting step includes: After the set flow rate is changed, the measurement value of the flow meter of the second liquid processing section is corrected to the specified value. The flow rate adjusting method according to claim 2 .

4. The measuring step includes: The temperature sensor disposed adjacent to the discharge portion is used to measure the temperature of the mixture on the surface of the substrate. The flow rate adjusting method according to claim 2 .

5. The measuring step includes: The temperature of the mixed liquid before being discharged from the discharge portion is measured using the temperature sensor disposed in the pipe connecting the mixing portion and the discharge portion or in the discharge portion. The flow rate adjusting method according to claim 2 .

6. a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid processing; a temperature sensor provided in each of the liquid processing sections for measuring a temperature of the mixed liquid; Control unit and Equipped with The control unit is discharging the mixed liquid under a plurality of discharging conditions in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units; measuring a temperature of the mixed liquid for each of the discharge conditions using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section; determining a correlation function between the temperature of the mixed liquid and a flow rate of sulfuric acid included in the discharge conditions for each of the first liquid processing section and the second liquid processing section based on the measured temperature of the mixed liquid, and generating a relational expression that indicates a relationship between the flow rates of sulfuric acid when the temperature of the mixed liquid is the same between the first liquid processing section and the second liquid processing section from the correlation function; adjusting a flow rate of sulfuric acid before being mixed into the mixed liquid in the second liquid treatment unit by using the relational expression; The substrate processing apparatus causes each unit to execute a flow rate adjustment method including the steps of:

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