Particle measuring device, three-dimensional shape measuring device, prober device, particle measuring system, and particle measuring method

Abstract

To provide a particle measuring device capable of managing a particle generation amount, a three-dimensional shape measuring device, a prober device, a particle measuring system, and a particle measuring method.SOLUTION: A particle measuring device includes: an unevenness calculation unit 254 for calculating a volume VMR of a recess depressed from a pad reference surface R in an electrode pad P based on pad surface shape data indicating a surface shape of the electrode pad P including a probe needle trace in contact with a probe needle 141 and a volume VMP of a projecting portion projecting from the pad reference surface R; and a particle generation amount calculation unit 255 for calculating a particle generation amount from volume difference between the volume VMR of the recessed portion and the volume VMP of the projecting portion.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a technique for measuring the amount of particles generated when inspecting the electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer. [Background technology]

[0002] The semiconductor manufacturing process involves many steps, and various inspections are performed at each manufacturing step to ensure quality and improve yield. For example, a wafer-level inspection is performed at the stage where multiple semiconductor chips (hereafter referred to as chips) are formed on a semiconductor wafer (hereafter referred to as wafer).

[0003] Wafer-level testing is performed using a prober device that brings numerous needle-shaped probes (hereinafter referred to as probe needles) formed on a probe card into contact with the electrode pads of each chip. The probe needles are electrically connected to the terminals of a test head, and the test head supplies power and test signals to each chip through the probe needles, while the test head detects output signals from each chip to measure whether they are operating normally.

[0004] After such a wafer-level inspection is performed, a technology has been disclosed in which the needle mark formed on the electrode pad is captured by a camera and the needle mark on the electrode pad is detected from the captured image in order to determine whether or not the probe needle has normally contacted the electrode pad (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2009-289818 A Summary of the Invention [Problem to be solved by the invention]

[0006] In a prober device, when a probe needle contacts an electrode pad, the probe needle may scrape off part of the surface of the electrode pad, generating particles (fine particles). These particles include oxide films and metal films formed on the surface of the electrode pad. If the particles remain on the wafer, they can cause the circuit to malfunction. In addition, the particles may adhere to the tip of the probe needle, which can adversely affect the measurement of electrical characteristics by the probe needle.

[0007] Therefore, in conventional prober devices, in order to reduce the effects of particles generated when the probe needle contacts the electrode pad, the number of probing operations (number of times the probe needle contacts) is counted, and when the number of probing operations reaches a certain number or when the results of the wafer-level inspection deteriorate, the inside of the prober device and the tips of the probe needles are cleaned, for example.

[0008] However, the amount of particles generated by a prober depends on the kinematic conditions during the probing operation (for example, the amount of overdrive of the probe needle), and the number of probing operations has a low correlation with the actual amount of particles generated. Therefore, there are problems of time wasted due to unnecessary cleaning and insufficient cleaning. In addition, it is too late to clean after the results of wafer-level inspection have deteriorated, which leads to a decrease in inspection efficiency.

[0009] The technology disclosed in Patent Document 1 is merely a technology for detecting needle marks on an electrode pad to determine whether or not a probe needle has normally contacted an electrode pad, and it is difficult to grasp the generation status of particles in a prober device.

[0010] The present invention has been made in consideration of the above circumstances, and has as its object to provide a particle measurement device, a three-dimensional shape measuring device, a prober device, a particle measurement system, and a particle measurement method that are capable of grasping the generation status of particles caused by a probe needle contacting an electrode pad on a wafer. [Means for solving the problem]

[0011] In order to solve the above problems, a particle measuring device according to one aspect of the present invention measures particles generated when a probe needle contacts an electrode pad of a wafer to inspect the electrical characteristics of the wafer. The particle measuring device includes an acquisition unit that acquires pad surface shape data showing the surface shape of the electrode pad including a probe needle mark where the probe needle contacts, a detection unit that detects a pad reference surface that serves as a reference for particle measurement from within the surface of the electrode pad based on the pad surface shape data acquired by the acquisition unit, an unevenness calculation unit that calculates the volume of a recess that is recessed from the reference surface in the surface shape of the electrode pad and the volume of a protrusion that protrudes from the pad reference surface based on the pad surface shape data acquired by the acquisition unit, and a particle generation amount calculation unit that calculates the particle generation amount from the volume difference between the volume of the recess and the volume of the protrusion calculated by the unevenness calculation unit. This makes it possible to grasp the generation status of particles generated when the probe needle contacts the electrode pad.

[0012] Preferably, the particle measuring device further includes a first accumulator that accumulates particle generation amounts calculated by the particle generation amount calculator for each of a plurality of electrode pads included on the wafer, and a first output unit that outputs information (warning) indicating a possibility of an abnormality occurring in the inspection results based on a result of comparing the particle accumulation value accumulated by the first accumulator with a first threshold value.

[0013] The particle measurement device quantitatively manages the amount of particles generated and outputs a warning if there is a possibility of an abnormality in the inspection results, allowing the operator to properly clean wafers that need cleaning, thereby improving the efficiency of the semiconductor manufacturing process.

[0014] Preferably, the particle measuring device further includes a second accumulating unit that accumulates the amount of particles generated for each prober device that inspects the electrical characteristics of the wafer, and a second output unit that outputs information indicating a prober device that may cause an abnormality in the inspection results based on a result of comparing the particle accumulation value accumulated for each prober device by the second accumulating unit with a second threshold value.

[0015] The particle measurement device quantitatively manages the amount of particles generated for each prober device and outputs a warning for prober devices that may cause abnormalities in the inspection results, allowing the operator to properly clean the prober devices or probe needles that need cleaning, thereby improving the efficiency of the semiconductor manufacturing process.

[0016] Preferably, the particle measuring device further includes a third accumulating unit that accumulates the amount of particles generated for each probe card used to inspect the electrical characteristics of the wafer, and a third output unit that outputs information indicating a probe card that may cause an abnormality in the inspection results based on a result of comparing the particle accumulation value accumulated for each probe card by the third accumulating unit with a third threshold.

[0017] The particle measurement device quantitatively manages the amount of particles generated for each probe card and outputs a warning for probe cards that may cause abnormalities in the test results, allowing the operator to properly replace probe cards that need to be replaced, thereby improving the efficiency of the semiconductor manufacturing process.

[0018] Preferably, the particle measuring device further comprises a fourth accumulating unit that accumulates the amount of particles generated for each probe needle of a probe card used to inspect the electrical characteristics of the wafer, and a fourth output unit that outputs information indicating a probe needle that may cause an abnormality in the inspection results based on the result of comparing the particle accumulated value accumulated for each probe needle by the fourth accumulating unit with a fourth threshold value.

[0019] The particle measuring device quantitatively manages the amount of particles generated for each probe needle and outputs a warning for probe needles that may cause abnormalities in the test results, so that the operator can properly clean the probe needles that need cleaning when cleaning the probe card. Since the probe card can be efficiently cleaned, the efficiency of the semiconductor manufacturing process can be further improved.

[0020] Preferably, the three-dimensional shape measuring device comprises a non-contact three-dimensional measurement unit that creates pad surface shape data indicative of the surface shape of the electrode pad including the probe needle mark where the probe needle makes contact, and a particle measuring device according to each embodiment of the present invention.

[0021] Preferably, the prober device includes a non-contact three-dimensional measuring unit that creates pad surface shape data that indicates the surface shape of the electrode pad including the probe needle mark where the probe needle contacts, and a particle measuring device according to each embodiment of the present invention. By mounting the particle measuring device on the prober device, it is possible to efficiently measure particles while the wafer after inspection is loaded on the prober device without transporting it. Furthermore, the recipe (various parameters such as wafer size and chip arrangement) used when inspecting the wafer can be inherited and used, so that particles can be efficiently measured in this respect as well.

[0022] Preferably, the particle measurement system includes one or more prober devices that bring probe needles into contact with electrode pads of the wafer to inspect the electrical characteristics of the wafer, a non-contact three-dimensional measuring device that creates pad surface shape data that indicates the surface shape of the electrode pad including the probe needle marks where the probe needles have made contact, and a particle measurement device according to each embodiment of the present invention.

[0023] In order to solve the above problem, a particle measurement method according to another aspect of the present invention measures particles generated when a probe needle contacts an electrode pad of a wafer to inspect the electrical characteristics of the wafer. The particle measurement method includes acquiring pad surface shape data showing the surface shape of the electrode pad including a probe needle mark where the probe needle contacts, detecting a pad reference surface serving as a reference for particle measurement from within the surface of the electrode pad based on the pad surface shape data, calculating the volume of a recess recessed from the pad reference surface and the volume of a protrusion protruding from the pad reference surface based on the pad surface shape data, and calculating the particle generation amount from the volume difference between the volume of the recess and the volume of the protrusion. This makes it possible to grasp the generation status of particles generated when the probe needle contacts the electrode pad. Effect of the Invention

[0024] According to the present invention, it is possible to grasp the generation state of particles that are generated when a probe needle contacts an electrode pad of a wafer in order to perform an electrical inspection of the wafer. [Brief description of the drawings]

[0025] [Figure 1] FIG. 1 is a schematic diagram of a particle measurement system according to a first embodiment. [Diagram 2] FIG. 2 is a schematic configuration diagram of the prober apparatus according to the first embodiment. [Diagram 3] FIG. 3 is a schematic configuration diagram of the three-dimensional shape measuring apparatus according to the first embodiment. [Figure 4] FIG. 4 is a diagram for explaining the calculation principle of the amount of generated particles. [Diagram 5] FIG. 5 is a flowchart showing an example of a particle measurement procedure according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of the pad surface shape data. [Figure 7]FIG. 7 is a diagram showing an example of a method for determining a needle mark area and detecting a pad reference surface. [Figure 8] FIG. 8 is a diagram showing a further example of a method for detecting the pad reference surface. [Figure 9] FIG. 9 is a diagram showing a further example of a method for detecting the pad reference surface. [Figure 10] FIG. 10 is a schematic diagram of a particle measurement system according to the second embodiment. [Figure 11] FIG. 11 is a schematic configuration diagram of a prober apparatus according to the second embodiment. [Figure 12] FIG. 12 is a schematic configuration diagram of a particle measuring device according to the second embodiment. [Figure 13] FIG. 13 is a diagram illustrating an example of a database in the second embodiment. [Figure 14] FIG. 14 is a flowchart showing an example of a particle measurement procedure according to the second embodiment. [Figure 15] FIG. 15 is a flowchart showing an example of a particle measurement procedure according to the second embodiment. [Figure 16] FIG. 16 is a diagram illustrating an example of a database in the third embodiment. [Figure 17] FIG. 17 is a flowchart showing an example of a particle measurement procedure according to the third embodiment. [Figure 18] FIG. 18 is a flowchart showing an example of a particle measurement procedure according to the third embodiment. [Figure 19] FIG. 19 is a schematic configuration diagram of a three-dimensional shape measuring apparatus according to the fourth embodiment. [Figure 20] FIG. 20 is a diagram illustrating an example of a database in the fourth embodiment. [Figure 21] FIG. 21 is a flowchart showing an example of a particle measurement procedure according to the fourth embodiment. [Figure 22] FIG. 22 is a diagram for explaining an example of a sampling method for an electrode pad. [Figure 23]FIG. 23 is a diagram for explaining a further example of the sampling method for the electrode pads. [Figure 24] FIG. 24 is a diagram for explaining a further example of the sampling method for the electrode pads. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description, components having basically the same configurations are given the same reference numerals.

[0027] [First embodiment] First, a particle measuring device according to a first embodiment of the present invention will be described. FIG. 1 is a configuration diagram of a particle measuring system 1000 according to the first embodiment. The particle measuring system 1000 includes a prober device 100 and a three-dimensional shape measuring device (particle measuring device) 200. A transfer device (not shown) for transferring a wafer W is provided between the prober device 100 and the three-dimensional shape measuring device 200. In FIG. 1, the X direction, Y direction, and Z direction are mutually orthogonal directions, the X direction is a horizontal direction, the Y direction is a horizontal direction orthogonal to the X direction, and the Z direction is a vertical direction. The same applies to other figures described later.

[0028] 2 is a schematic configuration diagram of the prober apparatus 100. The prober apparatus 100 includes a stage (including a chuck) 120, a stage moving mechanism 130, a probe card 140, a control unit 150, an operation unit 160, and a display unit 170.

[0029] The stage 120 has a holding surface (adsorption surface) capable of adsorbing the wafer W. The stage movement mechanism 130 supports the lower surface of the stage 120 (the surface opposite to the holding surface). The stage movement mechanism 130 is configured to be movable in the X, Y, and Z directions and rotatable in the θ direction (rotation direction around the Z direction). As a result, the wafer W adsorbed and held on the holding surface of the stage 120 can be moved in the X, Y, and Z directions and rotated in the θ direction together with the stage 120 by the stage movement mechanism 130.

[0030] Probe card 140 is provided at a position facing stage 120, and is disposed parallel to the holding surface of stage 120. Probe card 140 has a plurality of probe needles 141 formed on the surface facing stage 120. Furthermore, probe card 140 is connected to a tester main body (not shown) via test head 180.

[0031] A plurality of chips C are formed on the wafer W, and each chip C has one or more electrode pads P. The stage 120 is moved in the XYZ directions or rotated in the θ direction by the stage movement mechanism 130, thereby aligning the wafer W with the probe card 140 so that each probe needle 141 contacts the corresponding electrode pad P.

[0032] The control unit 150 is realized by, for example, a personal computer, a workstation, a PLC (Programmable Logic Controller), etc. The control unit 150 includes a CPU (Central Processing Unit) that controls the operation of each part of the prober device 100, a ROM (Read Only Memory), a storage device (not shown, for example, a HDD (Hard Disk Drive) or an SSD (Solid State Drive), etc.) that stores a control program, and an SDRAM (Synchronous Dynamic Random Access Memory) that can be used as a working area for the CPU. The control unit 150 accepts an operation input by an operator via an operation unit 160, and transmits a control signal according to the operation input to each part of the prober device 100 to control the operation of each part.

[0033] The operation unit 160 is a means for accepting operation input by an operator, and includes, for example, a keyboard, a mouse, or a touch panel.

[0034] The display unit 170 is a device that displays an operation GUI (Graphical User Interface) and images for operating the prober device 100. As the display unit 170, for example, a liquid crystal display can be used.

[0035] After the prober device 100 aligns and contacts the probe needles 141 with the electrode pads P, an electrical signal is sent from the tester body to the chip C via the test head 180, the probe card 140, and the probe needles 141 to inspect the electrical characteristics of the chip C on the wafer W. The inspection results of the electrical characteristics are notified to the operator via the display unit 170.

[0036] After the inspection of the electrical characteristics of the chips C on the wafer W is completed, the wafer W is transferred from the prober device 100 to the three-dimensional shape measuring device 200 by a transfer device (not shown).

[0037] Next, the configuration of three-dimensional shape measuring apparatus 200 according to the first embodiment of the present invention will be described with reference to Fig. 3. Three-dimensional shape measuring apparatus 200 includes a stage 220, a stage moving mechanism 230, a control unit 250, an operation unit 260, a display unit 270, a non-contact three-dimensional measuring unit 280, and a storage unit 290.

[0038] The stage 220 has a holding surface (adsorption surface) capable of adsorbing the wafer W. The stage movement mechanism 230 supports the lower surface of the stage 220 (the surface opposite to the holding surface). The stage movement mechanism 230 is configured to be movable in the X, Y, and Z directions and rotatable in the θ direction (rotation direction around the Z direction). As a result, the wafer W adsorbed and held on the holding surface of the stage 220 can be moved in the X, Y, and Z directions and rotated in the θ direction together with the stage 220 by the stage movement mechanism 230.

[0039] After the electrical characteristics of the chip C are inspected, a probe needle mark M (see FIG. 4) formed by the probe needle 141 remains on the surface of the electrode pad P. The non-contact three-dimensional measurement unit 280 measures the three-dimensional shape of the surface of the electrode pad P including this probe needle mark M in a non-contact manner, and stores the measurement result as pad surface shape data in the memory unit 290. Alternatively, the non-contact three-dimensional measurement unit 280 may output the pad surface shape data directly to the control unit 250.

[0040] Any measurement method can be adopted by the non-contact three-dimensional measuring unit 280. For example, the measurement methods include white light interference method, focus variation method, SD-OCT method (Spectral Domain Optical Coherence Tomography), FD-OCT method (Fourier Domain Optical Coherence Tomography), laser confocal method, triangulation method, light section method, pattern projection method, optical comb method, etc.

[0041] In this embodiment, a surface shape measuring device that uses white light interferometry to three-dimensionally measure the surface shape of a measurement object (electrode pad P in this example) in a non-contact manner is preferably applied as the non-contact three-dimensional measuring unit 280. A surface shape measuring device using white light interferometry uses white light with a wide wavelength range (low coherence light with little interference) as a light source, and uses an interferometer such as a Michelson type or Mirow type to measure the three-dimensional shape of the measurement surface of the measurement object in a non-contact manner. Such surface shape measuring devices are disclosed in, for example, JP 2016-080564 A and JP 2016-161312 A, and are publicly known, so a detailed description thereof will be omitted.

[0042] The control unit 250 calculates the amount of particles (fine particles) generated in the prober device 100 by analyzing the pad surface shape data. The particles are generated when the probe needle 141 scrapes off a part (such as an oxide film or a metal film) of the surface of the electrode pad P when the probe needle 141 contacts the electrode pad P. The control unit 250 includes a three-dimensional measurement control unit 251, an acquisition unit 252, a detection unit 253, an unevenness calculation unit 254, a particle generation amount calculation unit (corresponding to the particle generation amount calculation unit and each integration unit of the present invention) 255, and a judgment unit (corresponding to each output unit of the present invention) 256. In a narrow sense, the acquisition unit 252, the detection unit 253, the unevenness calculation unit 254, the particle generation amount calculation unit 255, and the judgment unit 256 correspond to the particle measuring device of the present invention. In a broad sense, the entire three-dimensional shape measuring device 200 corresponds to the particle measuring device of the present invention.

[0043] The operation unit 260 is a means for accepting operation input by an operator, and includes, for example, a keyboard, a mouse, or a touch panel.

[0044] The display unit 270 is a device that displays an operation GUI (Graphical User Interface) and images for operating the three-dimensional shape measuring device 200. As the display unit 270, for example, a liquid crystal display can be used.

[0045] The three-dimensional measurement control unit 251 controls the three-dimensional measurement by the non-contact three-dimensional measurement unit 280. The acquisition unit 252 acquires pad surface shape data indicating the three-dimensional shape of the surface of the electrode pad P from the non-contact three-dimensional measurement unit 280 or the storage unit 290. The detection unit 253 detects a pad reference surface that serves as a reference for particle measurement based on the pad surface shape data acquired by the acquisition unit 252.

[0046] The unevenness calculation unit 254 calculates the volume of the portion recessed from the pad reference surface and the volume of the portion protruding from the pad reference surface in the surface shape of the electrode pad P based on the pad surface shape data acquired by the acquisition unit 252. Hereinafter, the portion recessed from the pad reference surface (i.e., lower in height than the pad reference surface) will be referred to as a recess, and the portion protruding from the pad reference surface (i.e., higher in height than the pad reference surface) will be referred to as a protrusion.

[0047] The particle generation amount calculation unit 255 calculates the amount of particles generated from the volume difference between the volume of the convex portion and the volume of the concave portion calculated by the unevenness calculation unit 254. The determination unit 256 integrates the amount of particles generated calculated by the particle generation amount calculation unit 255, and determines whether or not the integrated value exceeds a predetermined threshold. This predetermined threshold is a value that is set in advance, and may be set, for example, at the time of shipment from the factory, or may be set or changed by the user.

[0048] The control unit 250 is realized by, for example, a personal computer, a workstation, a PLC (Programmable Logic Controller), etc. The control unit 250 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a storage device (not shown) (for example, a HDD (Hard Disk Drive) or an SSD (Solid State Drive)) that stores a control program, and an SDRAM (Synchronous Dynamic Random Access Memory) that can be used as a working area for the CPU. The control unit 250 accepts an operation input by an operator via an operation unit 260, and transmits a control signal according to the operation input to each part of the three-dimensional shape measuring device 200 to control the operation of each part.

[0049] The result of the determination by the determination unit 256 is output to the display unit 270. The user performs necessary processing such as cleaning the wafer W, cleaning the prober device 100, cleaning the probe needles 141, etc. in accordance with the display.

[0050] [Calculation principle of particle generation amount] Hereinafter, the principle of calculating the amount of generated particles in the present invention will be described with reference to Fig. 4. Fig. 4 shows a schematic diagram of a probe needle mark M formed by a probe needle 141 scraping the surface of a planar electrode pad P.

[0051] 4, the probe needle mark M has a convex portion MP that is higher than the pad reference surface R of the electrode pad P, and a concave portion MR that is lower than the pad reference surface R. The pad reference surface R can be detected from the average height of the area excluding the area where the probe needle mark M is located from the electrode pad P, using a method to be described later.

[0052] In the case where no particles are peeled off from the electrode pad P, the volume VMR of the recess MR and the volume VMP of the protrusion MP are theoretically equal. Therefore, in the present invention, the volume VMP of the protrusion MP of the probe needle mark M and the volume VMR of the recess MR are calculated from the three-dimensional shape of the surface of the electrode pad P, and the difference between the two is calculated as the amount of generated particles. Here, in order to accurately measure the volume VMP of the protrusion MP and the volume VMR of the recess MR, in the present invention, the three-dimensional shape of the surface of the electrode pad P including the probe needle mark M is measured in a non-contact manner using the non-contact three-dimensional measurement unit 280.

[0053] 4 shows a cantilever-type probe needle as an example of probe needle 141, but this is not intended to limit the probe needle 141. The present invention is applicable to any type of probe needle 141. Other types of probe needle 141 include, for example, a vertical needle that is a rod-shaped needle, and a crown needle that has multiple needle tips.

[0054] 4 shows a planar electrode pad as an example of the electrode pad P, but this is not intended to limit the electrode pad P. The present invention is applicable to any type of electrode pad P. Another type of electrode pad P is, for example, a bump pad having a convex curved surface (e.g., hemispherical). When the electrode pad P is a bump pad, the volume VMP of the convex portion MP and the volume VMR of the concave portion MR can be calculated by calculating the difference from the pad reference surface R of the global shape.

[0055] [Particle measurement procedure] Next, the particle measurement procedure in the first embodiment will be described with reference to FIG. 5. First, the target wafer W is loaded into the three-dimensional shape measuring device 200. That is, the wafer W is placed (held by suction) on the stage 220 of the three-dimensional shape measuring device 200, and the non-contact three-dimensional measuring unit 280 and the wafer W on the stage 220 are made to face each other (step S10). Next, the integrated value ΣΔV is reset (step S11). The stage 220 is moved or rotated by the stage moving mechanism 230 to perform positioning between the non-contact three-dimensional measuring unit 280 and the electrode pad P to be measured. Furthermore, the three-dimensional shape of the surface of the electrode pad P is measured and digitized by the non-contact three-dimensional measuring unit 280, and pad surface shape data is created (step S12).

[0056] Fig. 6 shows an example of pad surface shape data of an electrode pad P obtained by the non-contact three-dimensional measuring unit 280. Fig. 6 shows pad surface shape data indicating needle marks M formed on the surface of the electrode pad P substantially parallel to the XY plane. Reference numeral 6A in Fig. 6 is a graph showing the height direction position (Z-axis coordinate value) at each XY coordinate on the XY plane, with the larger the absolute value of the Z-axis coordinate value of the pixel being, the darker the shading. Reference numeral 6B in Fig. 6 is a graph in which the graph shown in reference numeral 6A is expressed in an XYZ orthogonal coordinate system.

[0057] Next, the acquisition unit 252 of the control unit 250 acquires the pad surface shape data directly from the non-contact three-dimensional measuring unit 280 or indirectly via the storage unit 290. The detection unit 253 of the control unit 250 detects a pad reference plane R, which is a reference for distinguishing between concave and convex parts, from within the surface of the electrode pad P, based on the pad surface shape data acquired by the acquisition unit 252 (step S13).

[0058] More specifically, the detection unit 253 identifies a needle trace region RM (see FIG. 7) in the pad surface shape data as a region centered on a pixel having a Z-axis coordinate value that is significantly different from the Z-axis coordinate values ​​of the surrounding pixels. Next, the detection unit 253 removes the needle trace region RM from the pad surface shape data and calculates the average value (average Z-axis coordinate value) of the Z-axis coordinate values ​​of the remaining region. Then, the XY plane having this average Z-axis coordinate value is detected as the pad reference plane R.

[0059] Here, the detection unit 253 can determine the needle trace region RM using any known technology. For example, the detection unit 253 may determine, as the needle trace region RM, a rectangle surrounding pixels whose absolute value of Z-axis coordinate value exceeds a predetermined value and pixels within a certain distance from those pixels in an XY plane graph of the pad surface shape data. More specifically, for example, as shown in Fig. 7, the detection unit 253 may determine, as the needle trace region RM, a rectangle surrounding pixels whose absolute value of Z-axis coordinate value exceeds 10 and pixels adjacent to those pixels in an XY plane graph shown by reference numeral 6A in Fig. 6.

[0060] Also, for example, the detection unit 253 may create a histogram showing the frequency of the Z-axis coordinate values ​​of pixels in the pad surface shape data, and calculate an average Z-axis coordinate value for pixels near the most frequent value. Fig. 8 is a histogram showing the frequency of Z-axis coordinate values ​​created for the pad surface shape data shown in Fig. 7, where the horizontal axis shows the Z-axis coordinate value and the vertical axis shows the number of pixels (frequency) having each Z-axis coordinate value. In the histogram shown in Fig. 8, since the vicinity of the Z-axis coordinate value 0 has the highest frequency, the detection unit 253 calculates the average value of the Z-axis coordinate values ​​for pixels whose Z-axis coordinate values ​​are between -10 and +10. Also, for example, the detection unit 253 may determine the needle trace region RM to be within a certain distance from pixels having the maximum and minimum Z-axis coordinate values.

[0061] The above describes the method for detecting the pad reference surface R when the electrode pad P has a planar shape substantially parallel to the XY plane. Next, the method for detecting the pad reference surface R when the electrode pad P is inclined or has a shape other than a planar shape will be described.

[0062] FIG. 9 shows an example of pad surface shape data obtained when the electrode pad P is inclined with respect to the XY plane, and reference numeral 9A in FIG. 9 is a graph showing the height direction position (Z-axis coordinate value) at each XY coordinate on the XY plane, similar to reference numeral 6A in FIG. 6.

[0063] When the electrode pad P is inclined with respect to the XY plane or has a shape other than a plane, for example, the detection unit 253 first removes the needle mark region RM from the pad surface shape data by the method described with reference to Fig. 7. Next, the detection unit 253 obtains an approximation equation indicating the pad reference plane R by approximating the XYZ coordinate values ​​of the remaining region of the pad surface shape data (see reference numeral 9B in Fig. 9) by the least squares method. In the case of the graph shown by reference numeral 9B in Fig. 9, the approximation result is as follows.

[0064] Z(X,Y)=aX+bY+ca=0.2,b=1.0,c=4.2 The method of detecting the pad reference surface R is not limited to this example, and any known technique can be used.

[0065] When the pad reference surface R is detected by the detection unit 253, the unevenness calculation unit 254 of the control unit 250 calculates the volume VMP of the convex portion MP and the volume VMR of the concave portion MR for the area of ​​the electrode pad P including the needle trace area RM, based on the pad reference surface R, based on the pad surface shape data acquired by the acquisition unit 252 (step S14).

[0066] For example, when the electrode pad P is inclined or has a shape other than a flat shape, the unevenness calculation unit 254 can calculate the volume VMP of the convex portion MP and the volume VMR of the concave portion MR using the approximate equation "Z(X,Y)=aX+bY+c" representing the pad reference surface R calculated by the detection unit 253 and the following equations (1) and (2).

[0067]

number

[0068]

number

[0069] When the pad reference surface R is not inclined, Z=aX+bY+c in the above formulas (1) and (2) can be replaced with a constant average Z-axis coordinate value (see the explanation of step S13), and thus formulas (1) and (2) can be simplified. The formulas after replacement are self-evident and will not be described here.

[0070] Next, the particle generation amount calculation unit 255 calculates the volume difference ΔV between the volume VMP of the convex portion MP and the volume VMR of the concave portion MR calculated by the unevenness calculation unit 254 (step S15). This volume difference ΔV corresponds to the amount of particles generated from the electrode pad P currently being measured. Furthermore, the particle generation amount calculation unit 255 adds the calculated volume difference ΔV to the integrated value ΣΔV (step S16).

[0071] Next, the particle generation amount calculation unit 255 determines whether there are any other electrode pads P to be measured (step S17). For example, an operator (or manufacturer) registers information specifying the electrode pads P to be measured in advance in the storage unit 290, and the particle generation amount calculation unit 255 performs the determination in step S17 based on this information. Alternatively, the determination in step S17 may be performed based on an input by the operator each time. Alternatively, the control unit 250 may automatically determine the electrode pads P to be measured according to a predetermined rule, and the particle generation amount calculation unit 255 may perform the determination in step S17 based on this determination. The determination of the electrode pads P to be measured will be described later.

[0072] If it is determined that there is another electrode pad P to be measured (step S17: NO), the process returns to step S12. If it is determined that there is no other electrode pad P to be measured (step S17: YES), the determination unit 256 determines whether the integrated value ΣΔV is greater than a predetermined first threshold value (step S18). If it is determined that the integrated value ΣΔV is equal to or smaller than the predetermined first threshold value (step S18: NO), the process for that wafer W ends.

[0073] If it is determined that the integrated value ΣΔV is greater than the predetermined first threshold value (step S18: YES), the determination unit 256 outputs information (hereinafter, referred to as a warning) indicating a possibility that the quality of the chip C may be affected to the display unit 270 (step S19). Upon receiving the warning, the operator cleans the wafer W as necessary and ends the processing of the wafer W.

[0074] Conventionally, there has been no method for quantitatively managing the amount of particles generated, which has resulted in problems such as time wasted due to unnecessary cleaning and insufficient cleaning.

[0075] On the other hand, the three-dimensional shape measuring apparatus 200 according to the first embodiment quantitatively manages the amount of particles generated from the wafer W and outputs a warning when the amount of particles generated exceeds a predetermined threshold, so that the operator can properly clean the wafer W that needs cleaning. This in turn makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0076] [Modification of the first embodiment] In the first embodiment, the prober device 100 and the three-dimensional shape measuring device 200 are separate entities, and a particle measurement system 1000 is configured that includes the prober device 100 and the three-dimensional shape measuring device 200. However, by adding the functions of a non-contact three-dimensional measuring unit 280 and a control unit 250 to the prober device 100, it is also possible to realize the prober device 100 and the particle measurement device in a single device.

[0077] In this case, after the inspection of the electrical characteristics of the chips C on the wafer W is completed, the stage 120 is moved by the stage moving mechanism 130 from a position facing the probe card 140 to a position facing the non-contact three-dimensional measurement unit 280 while the wafer W is still held by suction on the stage 120. Then, the non-contact three-dimensional measurement unit 280 measures the three-dimensional shape of the surface of the electrode pad P including the probe needle mark M in a non-contact manner. The subsequent processing is the same as in the first embodiment. Note that instead of moving the stage 120, the position of the stage 120 may be fixed, and the probe card 140, the test head 80, and the non-contact three-dimensional measurement unit 280 may be moved.

[0078] According to the modification of the first embodiment, in addition to the effects achieved by the above-mentioned first embodiment, there is an advantage that it is possible to realize a particle measuring device at low cost. Also, since it is not necessary to transport and load the wafer W from the prober device 100 to the three-dimensional shape measuring device 200, it is possible to measure particles efficiently. Furthermore, since the recipe (various parameters such as the size of the wafer W, the arrangement of the chips C, etc.) used when inspecting the wafer W can be used successively, it is possible to measure particles more efficiently than the first embodiment.

[0079] [Second embodiment] Next, a particle measuring device according to a second embodiment of the present invention will be described. In the first embodiment, the amount of particles generated for the wafer W is managed, thereby making it possible to properly clean the wafer W that needs cleaning. However, a plurality of prober devices may be used to inspect the electrical characteristics of chips C on a plurality of wafers W. In such a case, in the second embodiment, one particle measuring device manages the amount of particles generated for each prober device, thereby making it possible to properly clean the prober device that needs cleaning.

[0080] Fig. 10 is a configuration diagram of a particle measurement system 2000 according to the second embodiment. The particle measurement system 2000 includes a plurality of prober devices 2100-i (i is a natural number equal to or greater than 1) and a three-dimensional shape measuring device 2200. The three-dimensional shape measuring device 2200 and the plurality of prober devices 2100-i are connected to each other via a wired and / or wireless network N. Furthermore, a transfer device (not shown) for transferring a wafer W is provided between the three-dimensional shape measuring device 2200 and the plurality of prober devices 2100-i. Note that, in Fig. 10, three prober devices 2100-1, 2100-2, and 2100-3 are shown as an example, but this is not intended to limit the number of the plurality of prober devices 2100-i.

[0081] The configuration of each prober device 2100-i will be described below with reference to Fig. 11. As shown in Fig. 11, the prober device 2100-i further includes a wafer ID reading unit 300 in addition to the prober device 100 shown in Fig. 2.

[0082] Each wafer W has a wafer ID, which is information for identifying the wafer W. The wafer ID is given to each wafer W by, for example, printing, engraving, a one-dimensional barcode, a two-dimensional barcode, RFID, an IC tag, or the like. The wafer ID reading unit 300 is provided according to the type of wafer ID, and reads out the wafer ID given to each wafer W. For example, if the wafer ID is a two-dimensional barcode, the wafer ID reading unit 300 is a barcode reader. Any known technology can be used for the wafer ID and the wafer ID reading unit 300, and a description thereof will be omitted here.

[0083] In addition, each prober device 2100-i has a prober ID, which is information for identifying the respective prober device 2100-i.

[0084] The configuration of a three-dimensional shape measuring apparatus (particle measuring apparatus) 2200 according to the second embodiment will be described with reference to Fig. 12. As shown in Fig. 12, the configuration of the three-dimensional shape measuring apparatus 2200 is obtained by adding a wafer ID reading unit 310 to the configuration of the three-dimensional shape measuring apparatus 200 shown in Fig. 3. Since the wafer ID reading unit 310 is similar to the wafer ID reading unit 300, a description of the wafer ID reading unit 310 will be omitted.

[0085] In the second embodiment, the control unit 250 of the three-dimensional shape measuring device 2200 manages the amount of particle generation for each prober device 2100-i in a database. Fig. 13 shows an example of the database stored in the storage unit 290. As shown in Fig. 13, the storage unit 290 has a wafer ID database 320 and an integrated value database 330. The wafer ID database 320 stores a wafer ID for identifying a wafer W and a prober ID for identifying a prober device 2100-i used when inspecting the wafer W in association with each other. The integrated value database 330 stores an integrated value ΣΔV of the amount of particle generation for each prober device 2100-i.

[0086] Next, a particle measurement procedure in the second embodiment will be described with reference to Fig. 14 and Fig. 15. In the second embodiment, prior to particle measurement, a wafer ID is registered. Hereinafter, the wafer ID registration procedure will be described with reference to Fig. 14.

[0087] First, when each prober device 2100-i performs a probing operation, the wafer ID reading unit 300 of each prober device 2100-i reads the wafer ID from the wafer W (step S30). Next, each prober device 2100-i performs a probing operation on the wafer W, and further inspects the wafer W (step S31). When the inspection is completed, the wafer ID of the wafer W read in step S30 and the prober ID of the prober device 2100-i are transmitted to the three-dimensional shape measuring device 2200 (step S32). The three-dimensional shape measuring device 2200 associates the received wafer ID and prober ID, and stores them in the wafer ID database 320 of the storage unit 290 (step S33). This registration The procedure creates a database as shown in FIG.

[0088] Subsequently, the inspected wafer W is transferred by a transfer unit (not shown) to the three-dimensional shape measuring device 2200, where particle measurement is performed on the wafer W.

[0089] Next, particle measurement in the second embodiment will be described with reference to Fig. 15. As shown in Fig. 15, in the second embodiment, steps S11, S16, and S18 to S19 in the first embodiment shown in Fig. 5 are replaced with steps S34, S35, and S36 to S38, respectively. The other steps in Fig. 15 are similar to steps S12 to S15 in Fig. 5 of the first embodiment, and therefore description thereof will be omitted.

[0090] First, when the wafer W is transported to the three-dimensional shape measuring device 2200 and loaded into the three-dimensional shape measuring device 2200 (step S10), the wafer ID reading unit 310 of the three-dimensional shape measuring device 2200 reads the wafer ID from the wafer W (step S34). Next, steps S12 to S15 are performed in the same manner as in the first embodiment, and the amount of particles generated ΔV is calculated.

[0091] Next, when the particle generation amount ΔV is calculated (step S15), the particle generation amount calculation unit 255 of the control unit 250 acquires the prober ID associated with the wafer ID read in step S34 from the wafer ID database 320 of the storage unit 290. Next, the particle generation amount calculation unit 255 refers to the integrated value database 330 of the storage unit 290, and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired prober ID, thereby updating the integrated value ΣΔV (step S35).

[0092] Thereafter, if it is determined that there is no other electrode pad P to be measured (step S17: YES), the determination unit 256 determines whether the integrated value ΣΔV calculated in step S35 exceeds a predetermined second threshold value (step S36).

[0093] Here, in the first embodiment, the amount of particles generated is managed for the wafer W, whereas in the second embodiment, the amount of particles generated is managed for each prober device 2100-i. Therefore, the second threshold value used in step S36 in the second embodiment does not necessarily coincide with the first threshold value used in the first embodiment.

[0094] This second threshold is a value that is set in advance, like the first threshold. The second threshold may be set appropriately at the time of shipment from the factory, or may be set and changed appropriately by the user at any time. If a certain amount or more of particles accumulate in the prober device 2100-i, there is a risk of affecting the inspection of the wafer W. However, an operator (or a manufacturer) can empirically know the amount of particles generated that may affect the inspection from the usage record of the prober device 2100-i. Therefore, the operator may set the second threshold based on experience.

[0095] If it is determined in step S36 that the integrated value ΣΔV exceeds the predetermined second threshold, the determination unit 256 outputs to the display unit 270 information identifying the prober device 2100-i corresponding to the prober ID together with the prober ID acquired in step S35, and a warning (step S37). Upon receiving the warning, the operator cleans the prober device 2100-i as necessary. When cleaning is performed, the determination unit 256 resets the integrated value ΣΔV corresponding to the cleaned prober device 2100-i stored in the integrated value database 330 (step S38), and then ends the processing for that wafer W.

[0096] Conventionally, there was no method for quantitatively managing the amount of generated particles, so the prober device 2100-i that did not need cleaning was cleaned, or conversely, the cleaning of the prober device 2100-i was insufficient, which reduced the efficiency of the semiconductor manufacturing process.

[0097] On the other hand, the three-dimensional shape measuring apparatus 2200 according to the second embodiment of the present invention quantitatively manages the amount of particles generated from the wafer W for each prober apparatus 2100-i, and outputs a warning to prompt cleaning of the prober apparatus 2100-i in which the amount of particles generated exceeds a predetermined second threshold. This allows the operator to properly clean the prober apparatus 2100-i that needs cleaning. This in turn makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0098] [Modification of the second embodiment] In the second embodiment, the operator who receives the warning cleans the prober device 2100-i as necessary, but the warning may be output at a timing different from that of the second embodiment by appropriately changing the second threshold value used in step S36. In a modification of the second embodiment, the second threshold value may be adjusted to another threshold value so as to prompt the operator to clean the probe needles 141 of the probe card 140 mounted on the prober device 2100-i instead of cleaning the prober device 2100-i. According to the modification of the second embodiment, the operator can properly clean the probe needles 141 that need cleaning. This in turn makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0099] [Third embodiment] In the second embodiment, the amount of generated particles is managed for each prober device to determine whether the prober device needs to be cleaned. However, multiple probe cards may be used in one prober device. In the third embodiment, the amount of generated particles is managed for each probe card mounted on the prober device, making it possible to appropriately replace the probe card.

[0100] The particle measurement system (not shown) according to the third embodiment includes the prober apparatus 2100 and the three-dimensional shape measuring apparatus 2200 according to the second embodiment. The configurations of the prober apparatus 2100 and the three-dimensional shape measuring apparatus 2200 are similar to those of the second embodiment, and therefore descriptions thereof will be omitted.

[0101] In the third embodiment, each probe card 140-j (j is a natural number equal to or greater than 1) has a probe card ID that is information for identifying the probe card. When mounting the probe card 140-j, the prober device 2100 acquires the probe card ID of the probe card 140-j. The probe card ID is acquired, for example, by an operator's input. Alternatively, each prober device 2100-i may automatically read the probe card ID from the probe card 140-j using a reading unit (not shown) in a manner similar to the wafer ID described above.

[0102] 16 shows an example of a database stored in the storage unit 290 in the third embodiment. As shown in FIG. 16, in the third embodiment, the storage unit 290 has a wafer ID database 340 and an integrated value database 350. The wafer ID database 340 stores a wafer ID for identifying a wafer W and a probe card ID for identifying a probe card 140-j used when inspecting the wafer W in association with each other. The integrated value database 350 stores an integrated value ΣΔV of the amount of particles generated for each probe card 140-j.

[0103] The procedure of particle measurement in the third embodiment will be described with reference to Figs. 17 and 18. As in the second embodiment, the wafer ID is registered in the third embodiment. As shown in Fig. 17, the wafer ID registration procedure in the third embodiment is almost the same as the registration procedure in the second embodiment shown in Fig. 14. The difference is that in the second embodiment, the prober ID is transmitted and stored in steps S32 and S33 shown in Fig. 14, but in the third embodiment, the probe card ID is transmitted and stored in steps S40 and S41 shown in Fig. 17. The registration procedure creates a wafer ID database 340 shown in Fig. 16.

[0104] Next, the wafer W after inspection is transported by a transport unit (not shown) to the three-dimensional shape measuring device 2200, where particle measurement is performed on the wafer W. As shown in Fig. 18, the particle measurement procedure in the third embodiment is almost the same as the particle measurement procedure in the second embodiment shown in Fig. 15. The difference is that steps S35 to S38 in Fig. 15 are changed to steps S42 to S45 in Fig. 18.

[0105] Hereinafter, only the differences from the second embodiment will be described. First, in step S42 in the third embodiment, the particle generation amount calculation unit 255 refers to the wafer ID database 340 in the storage unit 290 to acquire the probe card ID corresponding to the wafer ID read in step S34. Furthermore, the particle generation amount calculation unit 255 refers to the integrated value database 350 in the storage unit 290, and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired probe card ID, thereby updating the integrated value ΣΔV.

[0106] Thereafter, when it is determined that there is no other electrode pad P to be measured (step S17: YES), in step S43, the determination unit 256 of the control unit 250 determines whether the integrated value ΣΔV exceeds a predetermined third threshold value. Here, the third threshold value may be a value different from the first and second threshold values ​​used in the first and second embodiments. The third threshold value is a value that is set in advance. The third threshold value may be appropriately set at the time of factory shipment, or may be appropriately set and changed at any time by the user. When the amount of particles accumulated in the probe card 140-j exceeds a certain amount, the life of the probe card 140-j is reached and the probe card 140-j needs to be replaced. However, the operator (or the manufacturer) can empirically know the amount of particles that require the probe card 140-j to be replaced based on the usage record of the probe card 140-j. For example, the operator sets the third threshold value based on experience.

[0107] Furthermore, in step S44, information for identifying the probe card 140-j corresponding to the probe card ID and a warning are output to the display unit 170 together with the probe card ID.

[0108] Upon receiving the warning, the operator replaces the probe card 140-j as necessary. When the probe card 140-j is replaced, in step S45, the judgment unit 256 resets the integrated value ΣΔV corresponding to the replaced probe card 140-j stored in the integrated value database 350, and then ends the processing for the wafer W.

[0109] Conventionally, since the probe card was replaced at a predetermined frequency, there were cases where the probe card was replaced even when it was not necessary. On the other hand, according to the third embodiment, the amount of particle generation is managed for each probe card 140-j, so that the probe card 140-j that needs to be replaced can be appropriately replaced. As a result, it is possible to improve the efficiency of the semiconductor manufacturing process.

[0110] [Modification of the third embodiment] The third embodiment and the second embodiment may be combined. This makes it possible to manage the prober device 2100-i equipped with the probe card 140-j. In this case, the storage unit 290 further includes a prober ID database (not shown) that associates and stores the probe card ID and the prober ID in addition to the wafer ID database 340 and the integrated value database 350 shown in FIG.

[0111] In a combination of the third embodiment and the second embodiment, for example, the probe card ID of the probe card 140-j that needs to be replaced, the prober ID of the prober device 2100-i that mounts the probe card 140-j, and a warning that prompts the replacement of the probe card 140-j are output to the display unit 270. This allows the probe card 140-j to be appropriately replaced even in a particle measurement system that includes a plurality of prober devices 2100-i.

[0112] [Fourth embodiment] In the third embodiment, the amount of particles generated is managed for each probe card mounted on the prober device. Here, particles adhere to the probe needles of the probe card, but since different types of probe needles are used for different types of wafers W, the amount of particles attached varies depending on the probe needle. In the fourth embodiment, it is possible to manage the amount of particles generated as the amount of particles attached for each probe needle.

[0113] The particle measurement system according to the fourth embodiment includes the prober apparatus 2100 according to the second embodiment and a three-dimensional shape measuring apparatus 4200 according to the fourth embodiment. The configuration of the prober apparatus 2100 is as described above, and therefore a description thereof will be omitted.

[0114] The configuration of a three-dimensional shape measuring apparatus 4200 according to the fourth embodiment will be described below with reference to Fig. 19. As shown in Fig. 19, the three-dimensional shape measuring apparatus 4200 according to the fourth embodiment is obtained by adding a position information acquiring unit 400 that acquires position information of the electrode pad P to the three-dimensional shape measuring apparatus 2200 according to the second embodiment. In the following description, the position information will be described as XY coordinates as an example.

[0115] Methods for acquiring the position information (XY coordinates) of the electrode pad P include, for example, a method for acquiring the XY coordinates from the driving amount of the stage moving mechanism 230, a method for acquiring the XY coordinates by the non-contact three-dimensional measuring unit 280, a method for acquiring the XY coordinates from an image of the chip C captured by a camera (not shown), etc. These are well-known techniques, and therefore their explanation will be omitted here.

[0116] The control unit 250 of the three-dimensional shape measuring apparatus 4200 according to the fourth embodiment manages the particle generation amount for each probe needle 141-k (k is a natural number) in a database. An example of the database stored in the storage unit 290 is shown in FIG. 20 , the storage unit 290 has a wafer type database 420, a needle database 430, and an integrated value database 440.

[0117] The wafer type database 420 stores, in association with each other, a wafer ID for identifying the wafer W and a wafer type ID for identifying the type of the wafer W. The needle database 430 stores, for each type of wafer W, arrangement information of the electrode pads P on the wafer W.

[0118] Specifically, the arrangement information of the electrode pads P includes, for each electrode pad P on the wafer W, a pad ID for identifying the electrode pad P, the XY coordinates of the electrode pad P, and a needle ID for identifying the probe needle 141-k that contacts the electrode pad P. Here, the XY coordinates may be relative coordinates based on, for example, a predetermined position on the wafer W or a predetermined position on the chip C.

[0119] The wafer type database 420 and the integrated value database 440 are registered in advance by an operator or a manufacturer in the storage unit 290 and are updated as necessary. The integrated value database 440 stores the integrated value ΣΔV of the amount of generated particles for each probe needle 141-k.

[0120] Next, the procedure of particle measurement in the fourth embodiment will be described with reference to Fig. 21. The procedure of particle measurement in the fourth embodiment is almost the same as that in the second embodiment, except that step S50 is added after step S34 in Fig. 15, and steps S51 to S54 are performed instead of steps S35 to S38 in Fig. 15.

[0121] Only the differences from the second embodiment will be described below. In the fourth embodiment, after the wafer ID is read in step S34, in step S50, the position information acquisition unit 400 acquires the XY coordinates of the electrode pad P to be measured. Here, the acquired XY coordinates may be relative positions based on the same positions as the XY coordinates stored in the wafer type database 420 of the storage unit 290.

[0122] Subsequently, after performing steps S12 to S15, in step S51, the particle generation amount calculation unit 255 acquires a wafer type ID associated with the wafer ID read in step S34 from the wafer type database 420 of the storage unit 290. Furthermore, the particle generation amount calculation unit 255 refers to the needle database 430 and acquires a needle ID that identifies the probe needle 141-k that contacts the electrode pad P having the XY coordinates acquired in step S50 based on the arrangement information of the electrode pad P corresponding to the wafer type ID. Furthermore, the particle generation amount calculation unit 255 refers to the integrated value database 440 and adds the particle generation amount ΔV calculated in step S15 to the integrated value ΣΔV corresponding to the acquired needle ID to update the integrated value ΣΔV (step S51).

[0123] Thereafter, when it is determined that there is no other electrode pad P to be measured (step S17: YES), the determination unit 256 determines whether or not the integrated value ΣΔV calculated in step S51 exceeds a predetermined fourth threshold value (step S52). Here, the fourth threshold value may be a value different from the first to third threshold values ​​used in the first to third embodiments. The fourth threshold value is a preset value, and may be appropriately set at the time of factory shipment, or may be appropriately set and changed by the user at any time. If a certain amount or more of particles adhere to the probe needle 141-k, there is a risk of affecting the inspection of the wafer W, but the operator (or manufacturer) can empirically know the amount of particles generated that may affect the inspection based on the usage record of the prober device 2100-i. Therefore, the operator may set the fourth threshold value based on experience.

[0124] If it is determined that the integrated value ΣΔV exceeds the predetermined fourth threshold value (step S52: YES), the determination unit 256 outputs the coordinates of the electrode pad P acquired in step S50, information identifying the probe needle 141-k corresponding to the coordinates, and a warning to the display unit 270 (step S53). The operator who receives the warning cleans the probe card 140 as necessary.

[0125] Conventionally, there has been no method for quantitatively managing the amount of particles generated for each probe needle 141-k. On the other hand, according to the fourth embodiment of the present invention, the amount of particles generated can be quantitatively managed for each probe needle 141-k, so that when cleaning the probe card 140, the probe needles 141-k that need cleaning can be properly cleaned. This allows the probe card 140 to be efficiently cleaned, thereby improving the efficiency of the semiconductor manufacturing process.

[0126] [Determining which electrode pads to measure] In the above first to fourth embodiments, particle measurement is performed on the electrode pads P to be measured. An operator (or manufacturer) can arbitrarily determine the electrode pads P to be measured. For example, all electrode pads P on the wafer W may be measured, or some of all electrode pads P may be sampled and measured. When some of all electrode pads P are measured, information on sampling of the electrode pads P to be measured is stored in advance in the storage unit 290 of the three-dimensional shape measuring apparatus 200, 2200, 4200 according to each embodiment. By sampling the electrode pads P, the time required for particle measurement can be shortened, and the efficiency of the semiconductor manufacturing process can be further improved.

[0127] When a portion of all the electrode pads P are to be measured, the electrode pads P may be sampled randomly, or may be sampled according to an arbitrary rule according to the needs of the operator. An example of a method for sampling the electrode pads P according to a rule will be described below.

[0128] [First sampling method] First, the first sampling method will be described with reference to Fig. 22. There are multiple chips on the wafer W, and in the first sampling method, all electrode pads P included in a specific chip C on the wafer W are sampled as measurement targets. For example, in the example shown in Fig. 22, among the multiple chips C on the wafer W, all four electrode pads P included in a specific chip C indicated by a thick solid line are sampled as measurement targets. Note that, although only one chip C is shown as the specific chip C in Fig. 22, naturally, multiple chips C may be determined as the specific chip C.

[0129] According to the first sampling method, particle measurement is performed on all electrode pads P included in a specific chip C on the wafer W, so that sampling is uniform across the entire chip C. As a result, the amount of particles generated across the entire wafer W can be estimated with high accuracy.

[0130] [Second sampling method] Next, the second sampling method will be described with reference to Fig. 23. There are multiple chips C on the wafer W, but in the probing operation by the prober devices 100, 2100, 2100-i, there are cases where the entire wafer W cannot be probed at once. In this case, the probing operation is performed multiple times, but in the second sampling method, all electrode pads P that are contacted in one or more specific probing operations among the multiple probing operations are sampled as measurement targets.

[0131] FIG. 23 shows an example of sampling in the case where the probe card 140 mounted on the prober device 100, 2100, 2100-i can simultaneously perform the probing operation on two chips C. In FIG. 23, the range of one probing operation is surrounded by a dashed line, and includes two chips C. Since there are seven chips C on the wafer W, four probing operations are required. In the example shown in FIG. 23, all of the eight electrode pads P contacted in a specific one of the four probing operations are sampled as measurement objects. Note that in FIG. 23, only the electrode pads P contacted in one probing operation are sampled, but it is natural that the electrode pads P contacted in multiple probing operations may be sampled as measurement objects.

[0132] According to the second sampling method, particle measurements are performed on all electrode pads P that are contacted in one probing operation, so that even if the amount of particles generated varies depending on the probe needle 141, the amount of particles generated on the entire wafer W can be estimated with high accuracy.

[0133] [Third sampling method] Next, the third sampling method will be described with reference to Fig. 24. For example, when the probe needles 141 are cantilever type probe needles, all the probe needles 141 do not necessarily contact the electrode pads P from the same direction. In the third sampling method, a certain percentage of the electrode pads P are sampled as measurement targets from among all the electrode pads P for each contact direction.

[0134] Fig. 24 shows an example of sampling in the case where multiple probe needles 141 contact multiple electrode pads P on a chip C from multiple different directions. In the example shown in Fig. 24, three probe needles 141 each contact the electrode pad P from the top, bottom, left, and right directions (a total of 12 probe needles 141). In Fig. 24, the probe needles 141 that contact from the same direction are surrounded by dashed lines.

[0135] In the example shown in Fig. 24, one electrode pad P is sampled as a measurement target from each of the contact directions of up, down, left, and right. In Fig. 24, the electrode pads P sampled as measurement targets are indicated by thick solid lines. Through this sampling, the electrode pads corresponding to one-third of all the probe needles 141 become measurement targets.

[0136] In FIG. 24, one electrode pad P (one third) is sampled as a measurement target for each contact direction, but it is of course possible to sample a plurality of electrode pads P for each direction.

[0137] The contact state between the probe needle 141 and the electrode pad P is determined by the relative posture and movement direction between the wafer W and the probe needle 141. Therefore, the amount of particles generated is easily affected by the direction of contact between the probe needle 141 and the electrode pad P. Therefore, by sampling a certain percentage of the electrode pads P from each of a plurality of contact directions, bias in the measurement results of the amount of particles generated due to the contact direction is reduced. This makes it possible to estimate the amount of particles generated over the entire wafer W with high accuracy.

[0138] [Effects of the invention] As described above, according to the first embodiment, it is possible to quantitatively manage the amount of particles generated from the wafer W. Furthermore, since a warning is output when the amount of particles generated exceeds a predetermined threshold, an operator can appropriately clean the wafer W that needs cleaning. As a result, it is possible to improve the efficiency of the semiconductor manufacturing process.

[0139] Here, by adding the functions of the non-contact three-dimensional measuring unit 280 and the control unit 250 to the prober device 100, it is possible to realize the prober device 100 and the particle measuring device in one device. This makes it possible to realize the particle measuring device at low cost. Furthermore, since it is not necessary to transport the wafer W from the prober device 100 to the three-dimensional shape measuring device 200 and load it into the three-dimensional shape measuring device 200, it is possible to measure particles efficiently. Furthermore, since the recipe used when inspecting the wafer W (various parameters such as the size of the wafer W and the arrangement of chips) can be inherited and used, it is possible to measure particles more efficiently.

[0140] According to the second embodiment, the amount of particles generated from the wafer W is quantitatively managed for each prober device 2100-i, and information for identifying the prober device 2100-i in which the amount of particles generated exceeds a predetermined threshold is output, along with a warning. This allows the operator to properly clean the prober device 2100-i or the probe needle 141 that needs cleaning. This in turn makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0141] According to the third embodiment, by managing the particle generation amount for each probe card 140-j, information for identifying the probe card 140-j whose particle generation amount exceeds a predetermined threshold and a warning are output. This allows the probe card 140-j that needs to be replaced to be appropriately replaced. This in turn makes it possible to improve the efficiency of the semiconductor manufacturing process.

[0142] According to the fourth embodiment, by quantitatively managing the amount of particles generated for each probe needle 141-k, information identifying the probe needle 141-k whose amount of particles generated has exceeded a predetermined threshold and a warning are output. This makes it possible to properly clean the probe needle 141-k that needs cleaning when cleaning the probe card 140. Since the probe card 140 can be efficiently cleaned, the efficiency of the semiconductor manufacturing process can be further improved.

[0143] Here, each embodiment may be combined with another. For example, the third embodiment may be combined with the second embodiment. This makes it possible to manage the prober device 2100-i on which the probe card 140-j is mounted.

[0144] In each embodiment, all electrode pads P of the chips C on the wafer W may be measured, or a portion of all the electrode pads P may be sampled and measured. By sampling the electrode pads P, the time required for particle measurement can be shortened, and the efficiency of the semiconductor manufacturing process can be further improved.

[0145] Although the present invention has been described above with reference to examples, it goes without saying that the present invention is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present invention. [Explanation of symbols]

[0146] 100, 2100, 2100-i... prober device, 120, 220... stage, 230... stage moving mechanism, 140, 140-j... probe card, 141, 141-k... probe needle, 150, 250... control unit, 160, 260... operation unit, 170, 270... display unit, 180... test head, 200, 2200, 4200... three-dimensional shape measuring device, 251... three-dimensional measurement control unit, 252... acquisition unit, 253... detection unit, 254... unevenness calculation unit, 255... part Tickle generation amount calculation unit, 256...determination unit, 290...storage unit, 300, 310...wafer ID reading unit, 320, 340...wafer ID database, 330, 350, 440...integrated value database, 400...position information acquisition unit, 420...wafer type database, 430...needle database, 1000, 2000...particle measurement system, C...chip, M...probe needle mark, P...electrode pad, W...wafer, R...pad reference surface, RM...needle mark area

Claims

1. 1. A particle measuring device for measuring particles generated when a probe needle contacts an electrode pad of a wafer in order to inspect electrical characteristics of the wafer, comprising: an unevenness calculation unit that calculates a volume of a concave portion recessed from a pad reference surface and a volume of a convex portion protruding from the pad reference surface in the electrode pad based on pad surface shape data indicating a surface shape of the electrode pad including a probe needle mark where the probe needle contacts the pad; a particle generation amount calculation unit that calculates a particle generation amount from a volume difference between the volume of the concave portion and the volume of the convex portion calculated by the unevenness calculation unit; A particle measuring device comprising:

2. a first integrating unit that integrates the particle generation amounts calculated by the particle generation amount calculating unit for each of the electrode pads included in the wafer; a first output unit that outputs information indicating a possibility of an abnormality occurring in a result of the inspection based on a result of comparing the particle integrated value integrated by the first integration unit with a first threshold value; The particle measuring device according to claim 1 , further comprising:

3. a second integrating unit that integrates the particle generation amount for each prober device that inspects the electrical characteristics of the wafer; a second output unit that outputs information indicating a prober device that may cause an abnormality in the inspection result based on a result of comparing the particle integrated value integrated for each prober device by the second integration unit with a second threshold value; The particle measuring device according to claim 1 or 2, further comprising:

4. a third integrating unit that integrates the particle generation amount for each probe card used to inspect the electrical characteristics of the wafer; a third output unit that outputs information indicating a probe card that may cause an abnormality in the inspection result based on a result of comparing the particle integrated value integrated for each probe card by the third integration unit with a third threshold value; The particle measuring device according to claim 1 , further comprising:

5. a fourth integrating unit that integrates the particle generation amount for each probe needle of a probe card used to inspect the electrical characteristics of the wafer; a fourth output unit that outputs information indicating a probe needle that may cause an abnormality in a result of the inspection based on a result of comparing the particle integrated value integrated for each probe needle by the fourth integration unit with a fourth threshold value; The particle measuring device according to claim 1 , further comprising:

6. a non-contact three-dimensional measuring unit that creates pad surface shape data indicative of the surface shape of the electrode pad including a probe needle mark where the probe needle makes contact; A particle measuring device comprising the particle measuring device according to any one of claims 1 to 5, Three-dimensional shape measuring device.

7. a non-contact three-dimensional measuring unit that creates pad surface shape data indicative of the surface shape of the electrode pad including a probe needle mark where the probe needle makes contact; A particle measuring device according to any one of claims 1 to 5, A prober apparatus comprising:

8. one or more prober devices for contacting probe needles with electrode pads of the wafer to test electrical characteristics of the wafer; a non-contact three-dimensional measuring device that creates pad surface shape data that indicates the surface shape of the electrode pad including a probe needle mark where the probe needle contacts; A particle measuring device according to any one of claims 1 to 5, A particle measurement system comprising:

9. 1. A particle measurement method for measuring particles generated when a probe needle contacts an electrode pad of a wafer in order to inspect electrical characteristics of the wafer, comprising: calculating a volume of a recess recessed from a pad reference surface and a volume of a protrusion protruding from the pad reference surface in the electrode pad based on pad surface shape data indicating a surface shape of the electrode pad including a probe needle mark where the probe needle contacts the pad; calculating the amount of generated particles from a volume difference between the volume of the recessed portion and the volume of the protruding portion; The particle measurement method includes:

Images