Method of parallelly assembling discrete components on substrate

Abstract

To assemble discrete components on a substrate.SOLUTION: A method for transferring a plurality of discrete components from a first substrate to a second substrate, includes a step of illuminating a plurality of regions on a top surface of a dynamic release layer adhering the plurality of discrete components to the first substrate, each of the irradiated regions being aligned with a corresponding one of the discrete components. The illuminating induces plastic deformation in each of the irradiated regions of the dynamic release layer. The plastic deformation causes at least a part of the discrete components to be concurrently released from the first substrate.SELECTED DRAWING: Figure 2B

Description

[Technical field]

[0001] [Priority claim] This application claims priority to U.S. Patent Application Publication No. 62 / 518,270, filed June 12, 2017, the contents of which are incorporated herein by reference in their entirety. [Background technology]

[0002] This detailed description relates generally to assembling discrete components onto a substrate. Summary of the Invention [Means for solving the problem]

[0003] In one aspect, a method for transferring a plurality of discrete components from a first substrate to a second substrate includes simultaneously irradiating a plurality of regions of a top surface of a dynamic release layer that attaches the plurality of discrete components to the first substrate, each of the irradiated regions being aligned with a corresponding one of the discrete components, the irradiating induces ablation of at least a portion of the dynamic release layer in each of the irradiated regions, and the ablation simultaneously detaches at least a portion of the discrete components from the first substrate.

[0004] Implementations may include one or more of the following features.

[0005] The step of irradiating the plurality of regions includes irradiating the plurality of regions with laser energy. The method includes separating the laser energy into a plurality of beamlets and irradiating each of the plurality of regions with one of the beamlets of laser energy. The method includes separating the laser energy using a diffractive optical element. The irradiation induces ablation of a partial thickness of the dynamic release layer in each of the irradiated regions. The ablation of the partial thickness of the dynamic release layer induces deformation of a remaining thickness of the dynamic release layer in each of the irradiated regions. The deformation includes blisters in each of the irradiated regions of the dynamic release layer, each of the blisters exerting a force on the corresponding individual component. The force exerted by the blisters detaches the individual component from the first substrate. The ablation of the partial thickness induces a plastic deformation in each of the irradiated regions. The ablation of the partial thickness induces an elastic deformation in each of the irradiated regions. The irradiation induces ablation of the entire thickness of the dynamic release layer in each of the irradiated regions. The method includes reducing an adhesive strength of the dynamic release layer prior to irradiating the plurality of regions. Reducing an adhesive strength of the dynamic release layer includes exposing the dynamic release layer to a stimulus. Exposing the dynamic release layer to a stimulus includes exposing the dynamic release layer to one or more of heat and ultraviolet light. Transferring the plurality of individual components includes transferring a first set of one or more individual components to a first target substrate, the individual components in the first set sharing a first common characteristic, and transferring a second set of one or more individual components to a second target substrate, the individual components in the second set sharing a second common characteristic. The individual components include light emitting diodes (LEDs), the characteristics including one or more of an optical characteristic and an electrical characteristic. Transferring the plurality of individual components to the second substrate includes transferring less than all of the individual components from the first substrate to the second substrate. The method includes transferring each of one or more of the individual components from the first substrate to a destination prior to transferring the plurality of individual components.The step of individually transferring each of the one or more of the individual components includes transferring individual components that do not meet a quality standard. The method includes, after transferring the plurality of individual components to the second substrate, transferring each of the one or more individual components remaining on the first substrate to the second substrate. The method includes, after transferring the plurality of individual components to the second substrate, transferring each of the one or more individual components from a third substrate to the second substrate. The plurality of individual components form an array of individual components on the second substrate, and transferring each of the one or more individual components remaining on the first substrate includes transferring an individual component to an empty location in the array on the second substrate. The step of irradiating a plurality of regions includes scanning the irradiation to a plurality of subsets of individual components. The plurality of individual components in each subset are simultaneously detached, and the plurality of subsets are detached consecutively. The step of irradiating a plurality of regions includes irradiating each region with an irradiation pattern. The method includes separating laser energy into the irradiation pattern. The method includes separating the laser energy into the irradiation pattern using a first diffractive optical element. The method includes separating the irradiation pattern into a plurality of beamlets of laser energy, each beamlet having the irradiation pattern. The method includes separating the irradiation pattern into a plurality of beamlets using a second diffractive optical element. The method includes scanning the plurality of beamlets of laser energy onto a plurality of subsets of individual components, each beamlet having the irradiation pattern. The method includes separating the laser energy into a plurality of beamlets of laser energy using a single diffractive optical element, each beamlet having the irradiation pattern. The irradiation pattern includes a plurality of beamlets of laser energy, each beamlet corresponding to a specific location on a given individual component. The irradiation pattern includes four beamlets of laser energy, each beamlet corresponding to a corner of a given individual component. Transferring the plurality of individual components from the first substrate to the second substrate includes transferring the plurality of individual components to the second substrate in a face-down orientation.The plurality of discrete components includes light emitting diodes (LEDs).

[0006] In one aspect, an apparatus includes a substrate assembly including a substrate, a dynamic release layer disposed on a surface of the substrate, and a plurality of individual components attached to the substrate by the dynamic release layer, and an optical system including at least one optical element configured to split a laser beam from a source of laser energy into a plurality of beamlets, each beamlet configured to irradiate a corresponding region of an upper surface of the dynamic release layer.

[0007] Implementations may include one or more of the following features.

[0008] The at least one optical element is configured to separate a laser beam from the light source into the plurality of beamlets, each beamlet having an illumination pattern. The illumination pattern includes a plurality of beamlets of laser energy, each beamlet of the illumination pattern configured to illuminate a specific location on a given discrete component. The optical system includes a first optical element configured to separate a laser beam from the light source into an illumination pattern, and a second optical element configured to separate the illumination pattern into the plurality of beamlets, each beamlet having the illumination pattern. The first and second optical elements each include a diffractive optical element. The optical system includes a first optical element configured to separate a laser beam from the light source into the plurality of beamlets, and a second optical element configured to separate each of the plurality of beamlets into the illumination pattern. The apparatus includes a scanning mechanism configured to scan the plurality of beamlets of laser energy over a plurality of regions of the dynamic release layer, each region of the dynamic release layer depositing a subset of the plurality of discrete components onto the substrate. The optical system has (i) a first configuration in which the optical element is in a path of the laser beam between the source of laser energy and the dynamic release layer, and (ii) a second configuration in which the optical element is not in a path of the laser beam between the source of laser energy and the dynamic release layer. When the optical system is in the first configuration, the optical element separates the laser beam into the plurality of beamlets. When the optical system is in the second configuration, the laser beam is incident on a top surface of the dynamic release layer at a location corresponding to a location of one of the individual components. The apparatus includes a controller configured to control alignment of the laser beam with a location of one of the individual components. The controller is configured to control alignment of the laser beam based on information indicative of one or more characteristics and qualities of each of one or more of the individual components.The optical system includes a first optical element configured to split the laser beam into a first number of beamlets, a second optical element configured to split the laser beam into a second number of beamlets, and a switching mechanism configured to position the first optical element or the second optical element in a path of the laser beam. The apparatus includes a source of laser energy. The source of laser energy includes a laser. Irradiation of the areas of the dynamic release layer causes removal of individual components aligned with the irradiated areas. One or more of the wavelengths and fluences of each beamlet of laser energy are sufficient to induce ablation of at least a partial thickness of the dynamic release layer in each of the irradiated areas. The wavelength or fluence of each beamlet is sufficient to induce ablation of a partial thickness of the dynamic release layer in each of the irradiated areas, the ablation of the partial thickness inducing deformation in each of the irradiated areas. The wavelength or fluence of each beamlet is sufficient to induce ablation of the entire thickness of the dynamic release layer in each of the irradiated areas. The dynamic release layer adhesion is responsive to a stimulus. The dynamic release layer adhesion is responsive to one or more of heat and ultraviolet light. The discrete components include LEDs.

[0009] In one aspect, an apparatus includes an optical system including a source of laser energy, a substrate holder configured to receive a substrate, and a first optical element configured to split a laser beam from the source of laser energy into a plurality of beamlets, the optical system having a first configuration in which the first optical element is disposed in a path of laser energy between the source of laser energy and the substrate holder, and at least one second configuration, the at least one second configuration being one or more of: (i) a configuration in which a second optical element is disposed in the path of the laser energy, and (ii) a configuration in which neither the first optical element nor the second optical element is in the path of the laser energy; and a controller configured to control the configurations of the optical system.

[0010] Implementations may include one or more of the following features.

[0011] The apparatus includes a scanning device configured to scan one or more laser beams output from the optical system relative to the substrate holder. The controller is configured to move the first optical element in and out of the path of the laser energy. The apparatus includes a stimulus application device configured to output a stimulus comprising one or more of ultraviolet light and heat. The stimulus application device is positioned to apply the stimulus to the substrate when the substrate is present in the substrate holder.

[0012] In one aspect, an apparatus includes an optical system including a source of laser energy, a first substrate holder configured to receive at least one first substrate, and a first optical element configured to split a laser beam from the source of laser energy into a plurality of beamlets, the optical system including a first configuration, in which the first optical element is disposed in a path of laser energy between the source of laser energy and the first substrate holder, and at least one second configuration, in which the at least one second configuration includes: (i) a first optical element configured to split a laser beam from the source of laser energy into a plurality of beamlets; and (ii) one or more of a configuration in which neither the first optical element nor the second optical element is in the path of the laser energy, a first controller configured to control the configuration of the optical system, a second substrate holder configured to hold the at least one second substrate, at least a portion of the second substrate holder being disposed below the first substrate holder, and a second controller configured to control positioning of the second substrate holder relative to the first substrate holder. The apparatus includes a scanning device configured to scan one or more laser beams output from the optical system relative to the substrate holder. The apparatus includes a stimulus application device configured to output a stimulus including one or more of ultraviolet light and heat. The apparatus includes a control system, the control system including the first controller and the second controller. The second substrate holder is configured to hold a plurality of second substrates. The apparatus includes a substrate rack configured to hold a plurality of second substrates and a transfer mechanism controllable by the second controller to transfer one of the plurality of second substrates from the substrate rack to the second substrate holder. The first substrate holder is configured to hold a plurality of first substrates. The apparatus includes a substrate rack configured to hold a plurality of first substrates and a transfer mechanism controllable by a third controller to transfer one of the plurality of first substrates from the substrate rack to the first substrate holder.

[0013] In one aspect, a method includes transferring a plurality of individual components from a substrate, the individual components being attached to the substrate by a dynamic release layer, the transferring including transferring each of one or more first individual components from the substrate to a first destination using a first laser-assisted transfer process, the first individual components not meeting a quality standard, and transferring a plurality of second individual components from the substrate to a second destination using a second laser-assisted transfer process, the second individual components meeting a quality standard.

[0014] Implementations may include one or more of the following features.

[0015] The step of transferring the plurality of second individual components includes transferring less than all of the second individual components such that one or more second individual components remain attached to the substrate. The method includes individually transferring each of the one or more of the second individual components that remain attached to the substrate to the second destination. The plurality of second individual components form an array of individual components at the second destination, and individually transferring each of the one or more remaining second individual components includes transferring each of the remaining second individual components to an empty location in the array. The second laser-assisted transfer process includes irradiating a plurality of areas of an upper surface of the dynamic release layer, each of the irradiated areas being aligned with a corresponding one of the second individual components, and the irradiating causes the second individual components to be simultaneously detached from the substrate. The first laser-assisted transfer process includes irradiating an area of ​​an upper surface of the dynamic release layer for each of the first individual components, the area being an area aligned with the first individual components, and the irradiation causes the first individual components to be detached from the substrate. The method includes reducing an adhesion of the dynamic release layer before transferring the one or more first individual components. Reducing the adhesion of the dynamic release layer includes exposing the dynamic release layer to one or more of heat and ultraviolet light. The second destination includes a target substrate, and transferring the plurality of second individual components to the second destination includes transferring a set of the second individual components to a mounting element disposed on an upper surface of the target substrate. The method includes curing the mounting element to bond the transferred second individual components to the target substrate. Curing the mounting element includes exposing the mounting element to one or more of heat, ultraviolet light, and mechanical pressure. The method includes applying the mounting element to the target substrate. The second destination includes a target substrate and the method includes bonding the transferred second discrete component to the target substrate.The second destination includes a target substrate having circuit components and the method includes interconnecting circuit components of the transferred second discrete component to circuit components of the target substrate.The method includes transferring the individual components from a donor substrate to the substrate. Transferring the individual components from the donor substrate to the substrate includes contacting a dynamic release layer on the substrate to the individual components on the donor substrate. The method includes singulating the individual components on the donor substrate. The donor substrate includes a dicing tape. The donor substrate includes a wafer. The method includes applying the dynamic release layer to the substrate.

[0016] In one aspect, a method includes transferring individual components from a support substrate to each of a plurality of target substrates, the individual components being attached to the support substrate by a dynamic release layer, the transferring step including using a laser-assisted transfer process to transfer a first set of the individual components to a first target substrate, and using the laser-assisted transfer process to transfer a second set of the individual components to a second target substrate, the individual components of the second set sharing a second characteristic different from the first characteristic.

[0017] Implementations may include one or more of the following features.

[0018] The method includes transferring the individual components from a plurality of support substrates to a plurality of target substrates. The method includes sequentially transferring the individual components from each of the plurality of support substrates. The transferring includes transferring individual components from a first support substrate to the one or more target substrates in a transfer system, removing the first support substrate from a transfer position in the transfer system, placing a second support substrate at the transfer position, and transferring individual components from the second support substrate to the one or more target substrates. The transferring includes transferring the first set of individual components to the first target substrate of a transfer system, removing the first target substrate from a transfer position of the transfer system, and placing the second target substrate at the transfer position for transferring the second set of individual components. The individual components include LEDs, and the first and second properties include one or more of an optical property and an electrical property. Transferring each set of individual components to a corresponding target substrate includes transferring each of the individual components of the set to the target substrate individually. Transferring each set of individual components to a corresponding target substrate includes transferring some or all of the individual components of the set to the target substrate simultaneously. Transferring a set of individual components to a corresponding target substrate includes transferring the individual components of the set onto a layer of die support material disposed on a top surface of the target substrate. The method includes applying the die receptive material to each target substrate. The method includes reducing adhesion of the dynamic release layer. Reducing adhesion of the dynamic release layer includes exposing the dynamic release layer to one or more of heat and ultraviolet light. The method includes transferring the individual components from a donor substrate to the support substrate. Transferring the individual components from the donor substrate to the support substrate includes contacting the dynamic release layer on the support substrate to the individual components on the donor substrate. The donor substrate includes a dicing tape. The donor substrate comprises a wafer. The method includes attaching the dynamic release layer to the support substrate.

[0019] In one aspect, an apparatus includes a substrate, a plurality of pockets formed on a top surface of the substrate, a spectrally shifting material disposed in each of the plurality of pockets and configured to emit light at one or more emission wavelengths in response to absorbing light at an excitation wavelength, and an LED disposed in each of the plurality of pockets, each LED configured to emit light at the excitation wavelength, each LED oriented such that light emitted from the micro LED illuminates the spectrally shifting material disposed in a corresponding pocket.

[0020] Implementations may include one or more of the following features.

[0021] The spectral shifting material includes a first spectral shifting material configured to emit light at a first emission wavelength and a second spectral shifting material configured to emit light at a second emission wavelength. The first spectral shifting material is disposed in a first subset of the plurality of pockets and the second spectral shifting material is disposed in a second subset of the plurality of pockets. The pockets are arranged in a two-dimensional array, the first spectral shifting material is disposed in pockets in a first row of the array and the second spectral shifting material is disposed in pockets in a second row of the array. The spectral shifting material includes a second spectral shifting material configured to emit light at a second emission wavelength, the first emission wavelength corresponding to red light, the second emission wavelength corresponding to green light, and the third emission wavelength corresponding to blue light. The LEDs are oriented such that an emission surface of each LED is away from a top surface of the substrate. Each LED includes a contact formed on a second surface of the LED, the second surface facing the emission surface. The device includes electrical interconnects in electrical contact with contacts of the LED. The substrate is transparent to light at the one or more emission wavelengths. The substrate absorbs light at an excitation wavelength. The device includes a planarization layer formed on a top surface of the substrate. The planarization layer is transparent to the one or more emission wavelengths. The spectrally shifting material includes one or more of a phosphor, a quantum dot, and an organic dye. The device includes a display device. Each pocket, the spectrally shifting material disposed therein, and the corresponding LED corresponds to a subpixel of the display device. The device includes a solid state lighting device.

[0022] In one aspect, a method includes disposing a spectrally-shifting material configured to emit light at one or more emission wavelengths responsive to absorbed light at an excitation wavelength in each of a plurality of pockets formed on a top surface of a substrate; and assembling an LED in each of the plurality of pockets, each LED configured to emit light above the excitation wavelength, each LED oriented such that light emitted from the LED illuminates the spectrally-shifting material disposed in a corresponding pocket.

[0023] Implementations may include one or more of the following features.

[0024] The method includes forming the pockets on a top surface of the substrate. The method includes forming the pockets by one or more of embossing and lithography. The disposing of the spectrally shifting material includes disposing a first spectrally shifting material in a first subset of the pockets, the first spectrally shifting material configured to emit light at a first emission wavelength, and disposing a second spectrally shifting material in a second subset of the pockets, the second spectrally shifting material configured to emit light at a second emission wavelength. Assembling an LED in each of the pockets includes assembling the LEDs such that an emitting surface of each micro LED is away from the top surface of the substrate. Assembling an LED in each of the pockets includes transferring a plurality of LEDs simultaneously to a corresponding pocket. Transferring a plurality of LEDs simultaneously includes transferring the plurality of LEDs by a massively parallel laser assisted transfer process. The method includes forming an electrical connection to each LED. The method includes forming an electrical connection to a contact on a second surface of each LED, the second surface facing the light emitting surface of each LED. The method includes forming a planarization layer on a top surface of the substrate. [Brief description of the drawings]

[0025] [Figure 1A] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 1B] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 2A] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 2B] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 2C] FIG. 1 is a diagram of a laser assisted transfer process. [Diagram 3]FIG. 1 is a diagram of a laser assisted transfer process. [Figure 4] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 5A] FIG. 13 is a diagram of the good die only transfer process. [Figure 5B] FIG. 13 is a diagram of the good die only transfer process. [Figure 5C] FIG. 13 is a diagram of the good die only transfer process. [Figure 6A] FIG. 13 is a diagram of the good die only transfer process. [Figure 6B] FIG. 13 is a diagram of the good die only transfer process. [Figure 6C] FIG. 13 is a diagram of the good die only transfer process. [Figure 7] FIG. [Figure 8] FIG. [Figure 9] 1 is a flowchart. [Figure 10] FIG. 1 is a diagram of a laser assisted transfer process. [Figure 11A] FIG. 1 is a diagram of a micro light emitting diode (LED) device. [Figure 11B] FIG. 1 is a diagram of a micro light emitting diode (LED) device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Here we describe an approach for massively parallel laser-assisted transfer of individual components onto a target substrate. This process enables ultra-fast, high-throughput, low-cost assembly of large numbers of individual components. For example, light-emitting diodes (LEDs) can be rapidly placed onto a substrate to produce LED arrays for use in devices such as displays or solid-state lighting.

[0027] With reference to Figures 1A and 1B, a laser-assisted transfer process is used for high-throughput, low-cost, non-contact assembly of discrete components on rigid or flexible substrates. The term discrete component generally refers to any unit that becomes part of a product or electronic device, such as, for example, electronic, electromechanical, photovoltaic, photonic, optoelectronic components, modules, or systems, such as semiconductor materials with circuits formed in the semiconductor material. Discrete components are ultra-thin, meaning that they have a maximum thickness of 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, 10 μm or less, or 5 μm or less. Discrete components are ultra-small, meaning that they have a maximum length or width dimension of 300 μm on a side, 100 μm on a side, 50 μm on a side, 20 μm on a side, or 5 μm on a side. Discrete components can be both ultra-thin and ultra-small.

[0028] 1A, discrete components 12 are attached to a support substrate 16 by a dynamic release layer 22. The term support substrate generally refers to any material that contains one or more discrete components, such as, for example, a collection of discrete components assembled by a manufacturer, such as a wafer containing one or more semiconductor dies.

[0029] 1A and 1B, the active surface 32 of the discrete component 12 faces away from the dynamic release layer 22, and in some examples, the active surface 32 can face toward the dynamic release layer 22.

[0030] 1B, in the blister transfer process, energy from a laser beam 24 is applied to the back surface 30 of the support substrate 16. The support substrate 16 is transparent to the wavelength of the laser energy. The laser energy 24 passes through the support substrate 16 and impinges on an area of ​​the dynamic release layer 22, causing ablation of a partial thickness of the dynamic release layer in the area where the laser energy 24 impinges (referred to as the irradiated area). The ablation generates a confined gas that expands and creates stress in the non-ablated remainder of the dynamic release layer 22. This stress causes the material of the dynamic release layer to elastically deform, forming a blister 26. When the stress resulting from the elastic deformation exceeds the yield strength of the dynamic release layer material, the dynamic release layer plastically deforms. The blister 26 exerts a mechanical force on the discrete component 12. When the mechanical force exerted by the blister 26 is sufficient to overcome the adhesion between the individual components 12 and the dynamic release layer 22, the mechanical force exerted by the blister 26 (in combination with gravity) pushes the individual components forward and away from the support substrate 16, for example, for transfer to a target substrate 28.

[0031] In the ablation transfer process, energy from a laser beam 24 is applied to the back surface 30 of the transparent support substrate, as shown in Figure 1B. The laser energy 24 incident on the area of ​​the dynamic release layer 22 causes ablation of the full thickness of the dynamic release layer 22 in the irradiated area, thereby removing the attachment between the discrete components 12 and the support substrate 16. Gas generated by the ablation, in combination with gravity, pushes the discrete components 12 forward and away from the support substrate 16 for transfer, for example, to a target substrate 28.

[0032] Further description of the laser-assisted blister transfer process of the dynamic release layer is provided in U.S. Patent Application Publication No. 2014 / 0238592, the contents of which are incorporated herein by reference in their entirety.

[0033] In some examples, the laser-assisted transfer process can be used to transfer multiple individual components simultaneously or nearly simultaneously. The term "simultaneously" is sometimes used generally to mean simultaneously or nearly simultaneously. This process, also called massively parallel laser-assisted transfer, can transfer individual components to a target substrate at very high speeds and with high throughput.

[0034] 2A, multiple discrete components 112 are attached to a single support substrate 116 by a dynamic release layer 122. Multiple discrete components 112 may be arranged in an array, such as a one-dimensional array or a two-dimensional array. The dynamic release layer 122 of FIG. 2A may include one or more layers.

[0035] 2B, the energy of the laser beam 124 is used for laser-assisted transfer of the multiple individual components 112 to the target substrate 128 simultaneously. The support substrate 116 is transparent to the wavelength of the laser beam 124. The laser beam 124 is split into multiple beamlets 140a, 140b, 140c by an optical element 142, such as a diffractive optical element, such as a beam splitter. By beamlet, we mean a beam of light, such as a beam of light having a size (e.g., diameter) smaller than the laser beam 124. Each of the multiple beamlets 140a, 140b, 140c is incident simultaneously with each of the other beamlets on a corresponding region of the dynamic release layer 122 aligned with one of the multiple individual components 112. In blister transfer, the laser energy of each of the multiple beamlets 140a, 140b, 140c induces the simultaneous formation of blisters 126 in each region of the dynamic release layer 122. The simultaneous formation of multiple blisters 126 allows all of the individual components 112 aligned with the irradiated areas of the dynamic release layer 122 to simultaneously separate from the dynamic release layer 122 , for example, for transfer to a target substrate 128 .

[0036] 2C, in some examples, ablation transfer can be used for simultaneous laser-assisted transfer of multiple individual components 112 onto a target substrate. In simultaneous ablation transfer, the laser energy of each beamlet 140a, 140b, 140c induces simultaneous ablation throughout the thickness of the dynamic release layer 122 in the irradiated region, thereby simultaneously separating the individual components 112 aligned with the irradiated region from the dynamic release layer 122 for transfer to, for example, the target substrate 128.

[0037] In the example of FIG. 2B, the laser beam 124 is split into three beamlets that are incident on the individual components 112 arranged in a one-dimensional array. In some examples, the laser beam 124 is split into multiple beamlets that are incident on the individual components arranged in a two-dimensional array. The laser beam 124 can be split into a larger number of beamlets, such as 10 beamlets, 100 beamlets, 500 beamlets, 1000 beamlets, 5000 beamlets, 10,000 beamlets, or another number of beamlets. The number of beamlets into which the laser beam 124 can be split can depend on the energy of the laser generating the laser beam 124. The number of beamlets can depend on the size of the individual components 112 to be transferred. For example, larger individual components can be transferred using more energy than smaller individual components, and therefore the laser beam 124 can be split into fewer beamlets to transfer larger individual components than to transfer smaller individual components.

[0038] In some examples, the laser beam 124 is split into fewer beamlets 140 than the number of individual components 112. The laser beam 124 can be scanned across the support substrate 116 to sequentially transfer subsets of the plurality of individual components 112, with the individual components within each subset being transferred simultaneously. For example, the laser beam 124 can be split into a two-dimensional pattern, e.g., to transfer a two-dimensional array of individual components, and the pattern can be scanned across the support substrate to simultaneously remove the individual components of the two-dimensional array. In some examples, the pattern can vary for different scan positions, e.g., to account for variations in type, size, or both of the individual components on the support substrate.

[0039] FIG. 3 shows a perspective view of a discrete component 112 and a portion of a dynamic release layer 322 aligned with the discrete component 112. For simplicity, the support substrate to which the dynamic release layer 322 is attached is not shown. A laser beam 324 is used to transfer the discrete component 112 onto a target substrate. An optical element 342 splits the laser beam 324 into a multi-beamlet pattern 326 that is incident on the dynamic release layer aligned with the discrete component 112. Each beamlet pattern causes either partial thickness ablation and blister formation of the dynamic release layer or ablation through the thickness of the dynamic release layer, applying a force to the discrete component at multiple locations. In the particular example of FIG. 3, the multi-beamlet pattern 326 includes four beamlets 326a, 326b, 326c, 326d oriented such that the beamlets are incident on the dynamic release layer aligned with the four corners of the discrete component 112. This configuration applies substantially equal forces to each corner of the discrete component 112. The use of laser energy in multiple beamlet patterns to transfer the individual components helps to achieve high yields and precise placement of the individual components on the target substrate.

[0040] FIG. 4 is a perspective view of multiple individual components 112 and a dynamic release layer 422. The support substrate to which the individual components 112 are attached is not shown for simplicity. A laser beam 424 is used to simultaneously transfer multiple individual components 112 onto a target substrate. The laser beam 424 is split into a multi-beamlet pattern 426 by a first optical element 428 of the optical system, such as a diffractive optical element, such as a beam splitter. The multi-beamlet pattern 426 includes multiple beamlets in an arrangement that are incident on the dynamic release layer aligned with a single individual component. For example, the multi-beamlet pattern 426 can include four beamlets of laser energy oriented to be incident on the dynamic release layer aligned with the four corners of the individual component.

[0041] The multi-beamlet pattern 426 undergoes a second split at a second optical element 430 of the optical system, such as a diffractive optical element, such as a beam splitter. The second split produces multiple groups 432 of the multi-beamlet pattern 426 of the laser beam. Each group 432 is incident on an area of ​​the dynamic release layer aligned with one of the individual components 112. The multiple beamlets in each group 432 form multiple blisters in the irradiated area of ​​the dynamic release layer or produce thickness-wise ablation in the irradiated area of ​​the dynamic release layer. This approach allows multiple individual components 112 to be transferred simultaneously, while the use of multiple beamlets per individual component helps to accurately place the individual components on the target substrate with a high yield.

[0042] 4, the laser beam 424 is split by a first optical element 428 into a pattern 426 that includes four beamlets, one beamlet at each corner of the individual component. The pattern 426 is split by a second optical element 430 into three groups 432a, 432b, 432d, each group including four beamlets of laser energy. Each group 432 is incident on an area of ​​the dynamic release layer 422 aligned with a corresponding one of the plurality of individual components 112, and within each group, the four beamlets are incident on the dynamic release layer aligned with the four corners of the corresponding individual component 112.

[0043] 4, the optical system includes two optical elements 428, 430. In some examples, the optical system can include a single optical element that splits the laser beam 424 into multiple patterns, each pattern including multiple beamlets of laser energy.

[0044] In some examples, the pattern of laser beamlets 426 is divided into groups 432 that are fewer than the number of individual components 112. The set of groups 432 can be scanned across a support substrate (not shown) to sequentially transfer subsets of the multiple individual components, with the individual components within each subset being transferred simultaneously.

[0045] In examples where a laser beam is scanned across a support substrate, the energy density incident on the dynamic release layer may vary as the laser energy is scanned, for example, due to variations in the distance the laser energy travels from its source and the angle at which the laser energy strikes the dynamic release layer. Differences in energy density may affect the positional accuracy at which the individual components are transferred to the target substrate and the yield of the transfer process. In some examples, the energy density (e.g., laser fluence) may be adjusted to compensate for changes in the angle at which the layer energy strikes the dynamic release layer, or changes in the distance between the source of the laser energy and the point at which the laser energy strikes the dynamic release layer. In some examples, the energy density may be adjusted according to changing the pattern of beamlets, for example, due to a change in the number of individual components to be transferred simultaneously, or due to a change in the number of beamlets incident on a single individual component. In some examples, optical elements such as lenses, e.g., telecentric lenses, may be used to reduce variations in the angle at which the laser energy strikes the dynamic release layer, thereby reducing differences in energy density. In some examples, the output power of the laser may be adjusted based on the removal process, for example, adjusted by the scan position or pattern of beamlets, or by another aspect of the removal process.

[0046] In some examples, the optical system is configured to be switched between a single-component mode, in which a single individual component is transferred individually, and a multi-component mode, in which multiple individual components are transferred simultaneously. In one example, the multiple individual components 112 on the support substrate may be individual components from a wafer. Using the single-component mode, one or more unwanted individual components may be transferred to a destination such as a test substrate or waste. For example, an unwanted individual component may be an individual component having a circuit that has failed testing. The multi-component mode may then be used to transfer one or more of the remaining individual components to a target substrate.

[0047] In some examples, after a multi-component mode transfer of one or more remaining individual components to a target substrate, the single-component mode is used to transfer an additional individual component to a location on the target substrate that is lacking an individual component (e.g., an individual component at that location was undesirably removed, was originally missing from the source substrate, or for other reasons). For example, the single-component mode can be used to transfer an individual component that was not transferred during the multi-component transfer, such as an individual component from a peripheral region of the wafer. The ability to transfer individual components in single-component mode helps improve yields by enabling the transfer of individual components that may be difficult to include in a group of individual components that are transferred simultaneously, such as components near the edge of the wafer.

[0048] In some examples, undesirable individual components can be identified based on a wafer map that indicates characteristics of each of one or more individual components on a support substrate. In some examples, the wafer map can be created based on testing before the individual components are attached to the support substrate. For example, the wafer map can be created based on testing each of the individual components after fabrication of the individual components, and the undesirable individual components can be components that have circuits that fail post-fabrication testing. The testing can include electrical testing of the circuits of the individual components, optical testing of the optical output of the individual components of LEDs, or other types of testing (e.g., testing the functionality of sensors on the individual components or the operation of microelectronics (MEMS) devices on the individual components). In some examples, the wafer map can be created based on in-situ testing of the individual components on the support substrate. For example, if the individual components are optoelectronic devices, photoluminescence (PL) testing can be performed in which each of the individual components is excited with low power laser energy and an optical response after relaxation to a ground state is detected. The optical response can be used to characterize the components.

[0049] 5A-5C and 6A-6C show examples of such a multi-transfer process, sometimes referred to as a "good die only" transfer process.

[0050] With particular reference to FIG. 5A, the individual components 550 arranged in an array are attached to a support substrate 552 by a dynamic release layer. The mapping indicates characteristics of each of the one or more individual components 550 in the array. For example, the mapping can indicate the results of post-manufacturing tests, quality control tests, or field tests as described above, and can indicate whether each of the individual components passed or failed the test. Individual components that pass the test (e.g., individual components that meet the quality standards) may be referred to as "good dies" and individual components that fail the test (e.g., individual components that do not meet the quality standards) may be referred to as "bad dies." In the example mapping of FIG. 5A, the bad dies (e.g., individual components 550a) are shaded in dark gray and the good dies (e.g., individual components 550b) are shaded in light gray. In a first transfer step, the bad dies are transferred in single component mode to a destination such as a test substrate or waste.

[0051] 5B, once the failed dies have been transferred in the single-component mode transfer, there is an empty position in the array on the support substrate 552 where each of the failed dies was originally located. For example, empty position 554 in the array corresponds to the position of the failed die 550a. At least some of the remaining individual components, which are good dies, are transferred to a target substrate 556 in a second multi-component transfer step, thereby forming a second array of transferred individual components 550' on the target substrate.

[0052] The transfer field 558 can define an area on the support substrate 552 of a desired size, an area encompassing a desired number of array locations, or an area encompassing a desired number of individual components. The multi-component transfer process can transfer only some or all of those individual components contained within the transfer field 558. Any individual components outside of the transfer field 558 are not transferred to the target substrate 556 and remain on the support substrate 552 as remaining individual components 560. In the example of FIG. 5B, the transfer field 558 is sized to encompass a 10×10 array, and the multi-component transfer process transfers all individual components contained within the transfer field. Thus, the array of individual components 550′ transferred onto the target substrate 556 is a 10×10 array of individual components (and empty locations, if any) in which the relative locations of the individual components and empty locations are preserved. The transfer field can be sized based on the desired size or number of individual components for a downstream application, such as a light emitting diode (LED) based display.

[0053] 5C, in some examples, the empty positions in the array of transferred individual components 550' on the target substrate are filled by a third transfer step. In the third transfer step, each of the one or more remaining individual components 560 (e.g., remaining good individual components) is transferred to one of the empty positions (e.g., empty position 554'; see FIG. 5B) on the target substrate 556 in a single-component mode transfer process. In some examples, the empty positions may be filled by transferring individual components from a different support substrate, such as when there are not enough individual components remaining on the support substrate 552 or when a different type of individual component is desired. Upon completion of the third transfer process, the array of transferred individual components 550' on the target substrate 556 is a complete array of good individual components with no empty positions.

[0054] 6A-6C, in some examples, a good die only transfer process transfers individual components in a particular pattern from a support substrate to a target substrate. With particular reference to FIG. 6A, individual components 580 arranged in an array are attached to a support substrate 582 by a dynamic release layer. A mapping of the properties of the individual components 580 shows bad dies in dark grey (e.g., individual components 580a) and good dies in light grey (e.g., individual components 580b). In a first transfer step, the bad dies are transferred in single component mode to a purpose such as a test substrate or waste.

[0055] With reference to FIG. 6B, when the bad dies are transferred in the single-component mode transfer, there are empty positions in the array on the support substrate 582 where each of the bad dies was originally located. The pattern of the remaining individual components, which are good dies, is transferred to the target substrate 586 in a second multi-component transfer step, thereby forming a second transferred array of transferred individual components 580' on the target substrate. For example, the pattern of individual components contained in the transfer field 588 can be transferred. In the example of FIG. 6B, the individual components in all other positions of the array on the support substrate 582 are transferred, and if there is an empty position in any of these positions, the empty position also remains in the transferred array. With reference to FIG. 6C, in some examples, the empty positions in the array of transferred individual components 580' on the target substrate are filled in a third transfer step, for example, by transferring the remaining individual components from the support substrate 582 or another support substrate.

[0056] In some examples, the third transfer step is not performed, and empty positions in the array of transferred individual components remain when the target substrate is provided to a downstream application. For example, the third transfer step may be omitted if the density of individual components in the array is sufficient to ensure that a small number of empty positions does not substantially affect the performance of the array in a downstream application. In some examples, the third transfer step is optional and may be performed based on the array of transferred individual components meeting (or not meeting) quality characteristics. For example, the third transfer step may be performed if there are more than a threshold number or percentage of empty positions, or if a threshold number of empty positions are adjacent to other empty positions.

[0057] 7, good die only processes such as those shown in FIGS. 5A-5C and 6A-6C can be performed on a transfer apparatus 750 that can be switched between multi-part and single-part modes. For example, the transfer apparatus 750 can include an automatic optical element changer 752 that allows various optical elements 754a, 754b, 754c to be moved into alignment with the laser 753, for example, depending on the type of transfer process (e.g., multi-part or single-part mode). In one example, the optical element 754a can be a single beam system and the optical elements 754b, 754c can be multi-beam systems with different beam configurations. Other configurations of the optical elements are possible. In some examples, the transfer apparatus 750 can include multiple optical elements in the path of the laser beam or beamlet, and the automatic optical element changer 752 can move one of the multiple optical elements in and out of the path. The transfer apparatus may include a scanning mechanism (not shown) capable of scanning a laser beam or beamlet from each optical system across the surface of the support substrate 758 to transfer one or more individual components 760.

[0058] The apparatus can be computer controlled by one or more local or remote computers or controllers 762 such that the end-to-end multi-transfer process is automated. For example, the controller can control the alignment of the laser beam or beamlets with the individual components to be transferred in the first single-part mode transfer. The controller can control the alignment of the laser beam or beamlets with the individual components transferred in the second multi-part transfer. The controller can control the alignment of the laser beam or beamlets with each of the remaining individual components to be transferred in the third transfer in the single-part mode, and can control the alignment of the support substrate with the target substrate during the third transfer in the single-part mode. The apparatus can include a stimulus application device 764 configured to output a stimulus, such as ultraviolet light or heat, that is applied to the support substrate to reduce adhesion of the dynamic release layer, for example.

[0059] The transfer apparatus may include a target substrate holder 766 for holding a target substrate. In some examples, the target substrate holder 766 may hold multiple target substrates. In some examples, such as the example apparatus 750 of FIG. 7, the target substrate holder 766 may hold a single target substrate 768′ in position to receive individual components transferred from the support substrate 758. A transport rack 770 configured to hold one or more target substrates 768 is controlled by a controller 772 to move individual target substrates from the transport rack 770 to the target substrate holder 766. As an example, a first target substrate may be held by the target substrate holder 766 to receive a first transfer (e.g., a bad die) from the support substrate 758. A second target substrate may then be transferred from the transport rack 770 to the target substrate holder 766 to receive a second transfer (e.g., a good die) from the support substrate 758.

[0060] The transfer apparatus may include a support substrate holder 774 for holding the support substrate 758. In some examples, the support substrate holder 774 may hold multiple support substrates. In some examples, such as the example apparatus 750 of FIG. 7, the support substrate holder 774 may hold a single support substrate. In some examples, a transport rack (not shown) configured to hold one or more support substrates may be controlled to move individual substrates from the transport rack to the support substrate holder 774.

[0061] Referring to FIG. 8, in some examples, single-component or multi-component modes can be used to sort the individual components 600 held on the support substrate 602 by one or more properties of the individual components. For example, if the individual components are LEDs, the properties can be emission wavelength, quantum output, turn-on voltage, light intensity, voltage-current characteristics, or other properties, or any two or more combinations thereof. The properties can be represented in a mapping that shows properties for each of the one or more individual components held on the support substrate 602. In the sorting process, each set of individual components that share a common property or combination of properties is transferred to a corresponding target substrate, resulting in a set of target substrates, each of which has a set of individual components that share a common property (e.g., properties that fall within a common range) or combination of properties. The individual components that share a common property or combination of properties can be transferred individually in single-component mode or simultaneously in multi-component mode.

[0062] The transfer apparatus 750 of FIG. 7 can be used to sort individual components by characteristics of the individual components. In some examples, the target substrate holder 766 can hold multiple target substrates, and individual components from a single support substrate 758 can be transferred to respective target substrates held in the target substrate holder 766 based on the characteristics of the individual components. In some examples, the target substrate holder 766 can hold a single target substrate. A first set of individual components from the support substrate 758 that share a common characteristic or combination of characteristics can be transferred to the first target substrate held in the target substrate holder 766. A second target substrate can then be transferred to the target substrate holder 766, and a second set of individual components having a different common characteristic or combination of characteristics can be transferred to the second target substrate.

[0063] In the example of Figure 8, discrete components 604 having a common first characteristic (e.g., LEDs having emission wavelengths in a first range) are transferred from the support substrate 602 to a first target substrate 606 in a first multi-component mode transfer. Discrete components 608 having a common second characteristic (e.g., LEDs having emission wavelengths in a second range) are transferred from the support substrate 602 to a second target substrate 610 in a second multi-component mode transfer. Discrete components 612 having a common third characteristic (e.g., LEDs having emission wavelengths in a third range) are transferred from the support substrate 602 to a third target substrate 614 in a third multi-component mode transfer. Although three target substrates are shown in Figure 8, the sorting process can transfer sets of discrete components to any number of target substrates.

[0064] 9, in an exemplary process for transferring individual components, singulated individual components are provided (700) to a temporary substrate such as a dicing tape, or a donor substrate such as a wafer, such as a silicon wafer or a sapphire wafer. For example, the wafer is attached to the dicing tape and diced into the individual components. Prior to attaching the wafer to the dicing tape, the wafer may be thinned, for example to a thickness of about 50 μm. Further description of dicing a wafer into individual components is provided in International Patent Application No. 2017 / 013216, filed January 12, 2017, the contents of which are incorporated herein by reference in their entirety.

[0065] The singulated individual components are transferred (702) from the temporary substrate to a transparent support substrate having a dynamic release layer disposed thereon. In some embodiments, the support substrate can be provided with a dynamic release layer already applied. In some examples, the dynamic release layer is applied to the support substrate. The support substrate is formed of a material such as glass or a transparent polymer and is at least partially transparent to at least some wavelengths of the ultraviolet, visible or infrared electromagnetic spectrum, including wavelengths used during the subsequent laser-assisted transfer process. In some examples, the singulated wafer components are transferred directly to the support substrate without the use of a temporary substrate. For example, direct transfer of singulated components can be used to transfer epi-thick micro-LEDs from a growth substrate to a support substrate using a laser lift-off process.

[0066] In some examples, the singulated individual components are transferred to a support substrate in a good-die-only transfer process in which the “bad die” are first removed from the temporary substrate and then the remaining “good die” are transferred to the support substrate.

[0067] The individual components are transferred from the temporary substrate to the support substrate by contacting the individual components on the temporary substrate with a dynamic release layer on the support substrate. In some examples, when the temporary substrate is a dicing tape, the dicing tape can be formed of a material that reduces adhesion in response to a stimulus, such as heat or ultraviolet light. When the dicing tape is exposed to the stimulus, the adhesion of the dicing tape decreases, thereby facilitating the transfer of the individual components to the support substrate. Further description of transferring individual components onto a support substrate is provided in International Patent Application No. 2017 / 013216, filed January 12, 2017, the contents of which are incorporated herein by reference in their entirety.

[0068] In some examples, the individual components can be transferred to a support substrate, for example as a full or partial wafer, prior to dicing. For example, the wafer or partial wafer can be mounted on a support substrate and then the wafer can be diced into individual components. In some examples, the wafer can be partially diced prior to transfer to the support substrate, and dicing can be completed after transfer to the support substrate.

[0069] In some examples, the dynamic release layer can be a material with controllable adhesion, such as a material with adhesion that can be reduced upon exposure to a stimulus, such as heat, ultraviolet light, or other stimulus. Once the individual components are transferred to the support substrate, a highly adhesive dynamic release layer facilitates the transfer and helps secure the individual components onto the support substrate. However, a less adhesive dynamic release layer can facilitate subsequent laser-assisted transfer of the individual components to the target substrate. Thus, in some examples, once the individual components are transferred to the support substrate, the adhesion of the dynamic release layer is reduced (704), for example, by exposing the dynamic release layer to a stimulus, such as heat or ultraviolet light. The reduced adhesion reduces the adhesion of the dynamic release layer overall, facilitating subsequent laser-assisted transfer. The reduced adhesion is optional, as indicated by the dashed border in FIG. 8. For example, in an ablative laser-assisted transfer process, the reduced adhesion does not typically occur. Further description of dynamic release layers with controllable adhesion is described in International Patent Application No. 2017 / 013216, filed January 12, 2017, the contents of which are incorporated herein by reference in their entirety.

[0070] In some examples, the sorting process transfers the individual components from the support substrate to a number of target substrates in a number of laser-assisted transfer processes (706). For example, the individual components can be transferred to the target substrates based on a characteristic of the individual components, thereby sorting the individual components by that characteristic. The result of the sorting process is a set of target substrates, each of which has a set of individual components that share a common characteristic.

[0071] In some examples, each of the target substrates can have a die catching material disposed thereon. A die catching material (DCM) is a material that receives the individual components as they are transferred from the support substrate and holds them in the target position while reducing post-transfer movement of the individual components on the target substrate. DCMs can be selected based on properties such as surface tension, viscosity, rheology, etc. For example, a DCM can provide viscous resistance to prevent movement of the individual components, or can prevent movement of the individual components by another externally applied force, such as electrostatic force, magnetic force, mechanical force, or a combination of any two or more.

[0072] In some examples, the target substrate has a die capture material already applied. In some examples, the DCM is applied to the target substrate prior to the transfer of the individual components. The DCM can be applied as a continuous film, for example having a thickness of about 3 μm to about 20 μm, using a film deposition method such as spin coating, dip coating, wire coating, doctor blade or another film deposition method. Alternatively, the DCM can be applied as a separate patterned film, for example at the locations where the individual components are to be placed. The patterned DCM film can be formed by a material printing technique such as stencil printing, screen printing, jetting, inkjet printing or other techniques. The patterned DCM film can be formed by pretreating the target substrate with a pattern of a material that adsorbs DCM, a material that repels DCM, or both, and then depositing the DCM using a continuous film deposition method to provide the DCM in areas that include the DCM adsorbing material (or areas that do not include the DCM repelling material). For example, the target substrate can be patterned with a hydrophilic material, a hydrophobic material, or both.

[0073] In some examples, the individual components on each target substrate are transferred (708) to a corresponding second substrate, such as a tape. Because the individual components are sorted by characteristics during transfer to the target substrate, each tape also receives individual components that share common characteristics. The tape can be provided to a downstream application, for example, an end product manufacturer. The transfer of the individual components to the second substrate can be a contact transfer. If the target substrate includes a layer of die capture material with controllable adhesion, the attachment element can be exposed to a stimulus to reduce adhesion, facilitating the transfer of the individual components.

[0074] In some examples, the individual components are transferred to a device substrate in a laser-assisted transfer process 710. Transfer of the individual components to the device substrate can include a good-die-only transfer process as described above, in which the bad die are first transferred from the support substrate to a waste section, and then the array of good die is transferred from the support substrate to the device substrate.

[0075] In some examples, the device substrate can have a conductive attachment element disposed thereon to enable die capture and interconnection. The attachment element can be a thermally curable material that cures in response to an applied stimulus, can cure when exposed to ultraviolet light, or can cure in response to other types of stimuli, or a combination of any two or more thereof. In some examples, the device substrate is provided with an attachment element already attached. In some examples, the attachment element is attached to the target substrate prior to the transfer of the discrete components. In some examples, the device substrate can have an attachment element disposed thereon that acts as a flux during soldering, and the die capture material can be activated by heating to facilitate soldering as a process of interconnecting the discrete components. Further description of attachment elements is provided in International Patent Application No. 2017 / 013216, filed January 12, 2017, the contents of which are incorporated herein by reference in their entirety.

[0076] The discrete components are bonded to the device substrate (712). For example, the attachment elements can be cured by exposure to a stimulus, such as, for example, high temperature, ultraviolet light, or other stimulus, or a combination of any two or more thereof, thereby increasing adhesion of the attachment elements. The stimulus can be removed after a sufficient time to cure the attachment elements, thereby forming a mechanical bond, an electrical bond, or both, between the device substrate and the discrete components. Further description of bonding discrete components to device substrates is provided in International Patent Application No. 2017 / 013216, filed Jan. 12, 2017, the contents of which are incorporated herein by reference in their entirety.

[0077] The discrete components are interconnected (714) to the device substrate to establish electrical connections between circuit elements on the discrete components and circuit elements on the device substrate. In some examples, the discrete components are interconnected to the device substrate in a face-up orientation, with the active surfaces of the discrete components facing away from the device substrate. The active surfaces of the discrete components are the surfaces on which the circuitry of the discrete components is formed. For face-up discrete components, the interconnects can include wire bonding, isoplanar printing (where a conductive material is printed on the device substrate and the active surfaces of the discrete components), direct write material deposition, thin film lithography, or other interconnect methods. In some examples, the discrete components are interconnected to the device substrate in a face-down orientation (sometimes referred to as "flip chip"), with the active surfaces of the discrete components facing the device substrate. Flip chip interconnects can include adhesive bonding, soldering, thermocompression bonding, ultrasonic bonding, or other flip chip interconnects.

[0078] Referring to FIG. 10, in an example process 800 for transferring discrete components such as micro LEDs, singulated discrete components are provided on a substrate (802), such as a wafer, for example a sapphire wafer.

[0079] In some examples, the individual components are transferred to an intermediate substrate (804), for example, by contacting the individual components on the donor substrate to the intermediate substrate. For example, an intermediate substrate can be used if the individual components are to be inverted (i.e., rotated 180°) for the final downstream application. The intermediate substrate may also improve a metric associated with the transfer process, such as yield, accuracy, or another metric. The individual components are then transferred from the intermediate substrate to a transparent support substrate (806) having a dynamic release layer disposed thereon.

[0080] In some examples, no intermediate substrate is used and the individual components are transferred directly from the donor substrate to the transparent support substrate. In such cases, aspect 804 of the transfer process is skipped and aspect 806 of the transfer process is the direct transfer of the individual components from the donor substrate to the transparent support substrate. The transfer of the individual components from the substrate (e.g., a sapphire wafer) to either the intermediate substrate or the support substrate can be done by a laser lift-off process. In a laser lift-off process, the active (functional) layer of the component is separated from the substrate by changing the material composition at the interface layer between the functional layer and the substrate. For example, in a laser lift-off process for GaN micro-LEDs epitaxially grown on a sapphire substrate, a laser (e.g., an ultraviolet laser) is focused on the interface between the GaN layer of the micro-LED and the sapphire substrate. The high temperature in the area where the laser is focused causes the thin (e.g., less than 1 μm thick) layer of GaN to decompose into gallium and nitrogen. Gallium has a very low melting point (approximately 30° C.) and the functional GaN layer of the micro-LED can be easily removed by melting the gallium layer.

[0081] Application of a stimulus such as heat, ultraviolet light, or other type of stimulus reduces the adhesion of the dynamic release layer (808). The individual components are then transferred to a device substrate using a laser-assisted transfer process (810). In the example of FIG. 10, the individual components are shown as being transferred individually in a single-component mode. In some examples, multiple individual components can be transferred simultaneously in a multi-component mode. In some examples, the transfer of the individual components includes a good die-only process, where bad die are removed from the support substrate in a first transfer process, and then good die are transferred to the device substrate in a second transfer process. The individual components on the device substrate are bonded to the device substrate and interconnected to circuit elements on the device substrate (812).

[0082] The above-described approach for massively parallel laser-assisted transfer of multiple individual components can be used to fabricate micro LED-based devices, e.g., displays such as television screens or computer monitors, or micro LEDs for use in solid-state lighting. Micro LED-based devices include an array of micro LEDs that form individual pixel or sub-pixel elements. In some examples, color can be achieved by using micro LEDs that emit different wavelengths. In some examples, color can be achieved by using micro LEDs in combination with spectral shifting materials such as organic dyes, phosphors, quantum dots, or using color filters.

[0083] Micro LED means an LED with at least one lateral dimension of 100 microns or less. Spectral shifting material means a material excited by light of a first wavelength (sometimes called the excitation wavelength) that emits light at a second wavelength (sometimes called the emission wavelength) different from the excitation wavelength. If the spectral shifting material is realized by a color filter, the color of the spectral shifting material is a color corresponding to the wavelength of light emitted by the spectral shifting material. If the spectral shifting material is realized by quantum dots, the color of the spectral shifting material depends on the size of the quantum dots. If the spectral shifting material is realized by organic dyes or phosphors, the color of the spectral shifting material depends on the composition of the dyes or phosphors.

[0084] 11A and 11B, a micro LED device 500 includes a substrate 502 having an array of pockets 504 formed on a top surface of the substrate 502. Each of the pockets 504 corresponds to a subpixel of the device 500. The pockets 504 may be formed by embossing, lithography, or other manufacturing methods. A spectrally shifting material 506 is disposed in at least some of the pockets 504. The color of the spectrally shifting material 506 may vary across the array of pockets 504, for example, row by row, column by column, in another pattern, or randomly. In the example of FIG. 11A and 11B, the color of the spectrally shifting material 506 varies by column of the array of pockets 504, such that a first column 508a has a red spectrally shifting material in its pockets 504, a second column 508b has a green spectrally shifting material in its pockets 504, and a third column 508c has a blue spectrally shifting material in its pockets. The substrate 502 can be made of a material that is transparent to the color of the spectral-shifting material. For example, the substrate 502 can be glass or a transparent polymer.

[0085] A micro LED 510 is disposed in each of the pockets 504 of the substrate 502. For example, the micro LEDs 510 can be disposed in the pockets 504 using the approaches described above for massively parallel laser assisted transfer of multiple individual components. The micro LEDs 510 are disposed in the pockets 504 and a spectrally shifting material 506 surrounds the light emitting surface and sides of the micro LEDs 510. The micro LEDs 510 emit light at a wavelength that can excite the spectrally shifting material 506 to emit light. For example, the micro LEDs can emit ultraviolet light.

[0086] 11A and 11B, the micro LEDs 510 are controlled by a passive matrix where electrical contacts 512 on opposite sides of the micro LEDs 510 are exposed towards the top surface 514 of the substrate 502. Row electrodes 516 and column electrodes 518 are connected to the electrical contacts 512 of the micro LEDs 510 and provide a way to individually address each micro LED 510 to excite a given pixel or sub-pixel of the spectrally shifting material 506. A planarization layer 520 is formed on the top surface 514. The planarization layer 520 may be transparent or opaque to the light from the spectrally shifting material 506. In some examples, the micro LEDs are controlled by active matrix techniques where each of the micro LEDs is individually controlled using electronic components such as thin film transistors and capacitors.

[0087] The transparent substrate is transmissive to the light emitted by the spectrally shifting material but absorbs the light emitted by the micro-LEDs. The planarization layer can be transparent or opaque to the light emitted by the spectrally shifting material.

[0088] In some examples, the walls of the substrate 502 between the pockets 504 absorb the light emitted from the micro LEDs 510 and prevent light from one micro LED from exciting the spectral-shifting material 506 of a different pocket 504, thus reducing or eliminating crosstalk and color contamination between adjacent subpixels. The presence of the spectral-shifting material 506 encompassing the emitting surface and sides of the micro LEDs 510 also helps to reduce or eliminate crosstalk and color contamination. In some examples, the walls of the substrate 502 between the pockets 504 reduce or eliminate crosstalk, improve quantum efficiency by reflecting light that would not otherwise be absorbed by the walls, and improve directionality of the emitted light.

[0089] The micro LEDs 510 can be incorporated into the device 500 using the approaches described above for massively parallel laser-assisted transfer of multiple individual components. Using these approaches, the micro LEDs 510 can be rapidly assembled, allowing for high throughput manufacturing. For example, assembling the micro LEDs into a full HD display using the approaches described above can take less than about 10 minutes, e.g., about 1 minute, about 2 minutes, about 4 minutes, about 6 minutes, about 8 minutes, or about 10 minutes. In contrast, transferring each of the micro LEDs individually to assemble the same display using current conventional techniques can take more than an hour, e.g., about 100 hours, about 200 hours, about 400 hours, about 600 hours, or about 800 hours.

[0090] In some examples, the approach described here for simultaneous transfer of multiple individual components can be used in the assembly of other devices such as micro solar cells or microelectromechanical (MEMS) devices. For example, to assemble components of a MEMS mirror, the pattern of beamlets of laser energy can be dynamically changed according to the mirror specifications. Another example is the heterogeneous integration of system-on-chip (SoC) or system-in-package (SiP) components, where multiple functional blocks (chiplets) need to be transferred to an interposer substrate where they are assembled together to form the SoC / SiP component.

[0091] A number of embodiments of the present invention have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the present invention. For example, some of the steps described above may be order independent and may be performed in an order different from that described.

[0092] Other embodiments are within the scope of the following claims. [Explanation of symbols]

[0093] 12 Individual parts 16 Support substrate 22 Dynamic peeling layer 24 Laser Beam 26 Blister 28 Target Board 32 Active surface 112 Individual parts 116 Support substrate 122 Dynamic peeling layer 124 Laser Beam 126 Blister 128 target board 140a Beamlet 140b Beamlet 140c Beamlet 142 Optical Elements 322 Dynamic peeling layer 324 Laser Beam 326 Multi-Beamlet Pattern 326a Beamlet 326b Beamlet 326c Beamlet 326d Beamlet 342 Optical Elements 422 Dynamic peeling layer 424 Laser Beam 426 Multi-Beamlet Pattern 428 First Optical Element 430 Second Optical Element 432 Group 432a Group 432b Group 432c Group 500 Micro LED Devices 502 Substrate 504 Pocket 506 Spectral Shifting Materials 508a First column 508b Second column 508c Third column 510 Micro LED 512 Electrical contacts 514 Top surface 520 Planarization layer 550 Individual Parts 550' Individual parts 550a Individual parts 550b Individual parts 552 Support Substrate 554 Empty Position 554' Empty position 556 target board 558 Transport Field 560 Individual Parts 580 Individual Parts 580' Individual parts 580a Individual parts 580b Individual parts 582 Support Substrate 586 Target Board 588 Transport Field 600 individual parts 602 Support Substrate 604 Individual parts 606 First target substrate 608 Individual Parts 610 Second target substrate 612 Individual parts 614 Third target substrate 750 Transfer device 752 Automatic Optical Element Exchanger 753 Laser 754a optical system 754b Optical system 754c optical system 758 Support Board 760 Individual Parts 762 Controller 764 Stimulus Application Device 766 Target Board Holder 768 Target Board 768' target board 770 Transport Rack 772 Controller 774 Support Board Holder

Claims

1. Transferring a plurality of discrete components from a first substrate to a second substrate, comprising: simultaneously irradiating a plurality of areas of a top surface of a dynamic release layer that attaches the plurality of discrete components to the first substrate, each of the irradiated areas being aligned with a corresponding one of the discrete components; the irradiating induces ablation of at least a portion of the dynamic release layer in each of the irradiated regions; a transferring step, wherein the ablation simultaneously detaches at least some of the individual components from the first substrate; The method includes:

2. The method of claim 1 , wherein irradiating the plurality of regions comprises irradiating the plurality of regions with laser energy.

3. The method of claim 2 , comprising: splitting the laser energy into a plurality of beamlets; and irradiating each of the plurality of regions with one of the beamlets of laser energy.

4. The method of claim 3 including separating the laser energy using a diffractive optical element.

5. 5. The method of claim 1, wherein the irradiation induces partial-thickness ablation of the dynamic release layer in each of the irradiated regions.

6. The method of claim 5 , wherein ablation of the partial thickness of the dynamic release layer induces deformation of a remaining thickness of the dynamic release layer in each of the irradiated regions.

7. The method of claim 6 , wherein the deformation comprises a blister in each of the irradiated areas of the dynamic release layer, each of the blisters exerting a force on the corresponding discrete component.

8. The method of claim 7 , wherein the force applied by the blister detaches the discrete component from the first substrate.

9. 9. The method of claim 6, wherein the partial thickness ablation induces plastic deformation in each of the irradiated regions.

10. 10. The method of claim 6, wherein the partial thickness ablation induces elastic deformation in each of the irradiated regions.

11. The method of claim 1 , wherein the irradiation induces ablation of the entire thickness of the dynamic release layer in each of the irradiated regions.

12. 12. The method of claim 1, further comprising reducing the adhesion of the dynamic release layer prior to irradiating the plurality of regions.

13. The method of claim 12 , wherein reducing the adhesive strength of the dynamic release layer comprises exposing the dynamic release layer to a stimulus.

14. 14. The method of claim 13, wherein exposing the dynamic release layer to a stimulus comprises exposing the dynamic release layer to one or more of heat and ultraviolet light.

15. transferring the plurality of individual components; transferring a first set of one or more discrete components to a first target substrate, the first set of discrete components sharing a first common characteristic; transferring a second set of one or more discrete components to a second target substrate, the second set of discrete components sharing a second common characteristic; 15. The method of claim 1 , comprising:

16. 16. The method of claim 15, wherein the discrete components comprise light emitting diodes (LEDs) and the characteristics comprise one or more of optical and electrical characteristics.

17. 17. The method of claim 1, wherein transferring the plurality of discrete components to the second substrate comprises transferring less than all of the discrete components from the first substrate to the second substrate.

18. 20. The method of claim 17, comprising transferring each of one or more of the discrete components from the first substrate to a destination prior to transferring the plurality of discrete components.

19. The method of claim 18 , wherein individually transferring each of one or more of the individual parts comprises transferring individual parts that do not meet a quality standard.

20. 20. The method of claim 17, further comprising, after transferring the plurality of individual components to the second substrate, transferring each of one or more individual components remaining on the first substrate individually to the second substrate.

21. 21. The method of claim 17, further comprising, after transferring the plurality of discrete components to the second substrate, individually transferring each of one or more discrete components from a third substrate to the second substrate.

22. 22. The method of claim 20 or 21, wherein the plurality of discrete components form an array of discrete components on the second substrate, and transferring each of the one or more discrete components remaining on the first substrate comprises transferring an individual component to an empty position in the array on the second substrate.

23. 23. The method of claim 1, wherein illuminating a plurality of areas comprises scanning the illumination over a plurality of subsets of the individual components.

24. The method of claim 23 , wherein the individual parts in each subset are removed simultaneously, and the subsets are removed consecutively.

25. 25. The method of claim 1, wherein illuminating a plurality of regions comprises illuminating each region with an illumination pattern.

26. 26. The method of claim 25, comprising splitting laser energy into said radiation pattern.

27. 27. The method of claim 26, comprising separating the laser energy into the radiation pattern using a first diffractive optical element.

28. 28. The method of claim 26 or 27, comprising separating the radiation pattern into a plurality of beamlets of laser energy, each beamlet having the radiation pattern.

29. 30. The method of claim 28, comprising splitting the illumination pattern into a plurality of beamlets using a second diffractive optical element.

30. 30. The method of claim 28 or 29, comprising scanning the multiple beamlets of laser energy onto multiple subsets of individual parts, each beamlet having the irradiation pattern.

31. 31. The method of any one of claims 26 to 30, comprising splitting laser energy into a plurality of beamlets of laser energy using a single diffractive optical element, each beamlet having the irradiation pattern.

32. 32. The method of any one of claims 25 to 31, wherein the irradiation pattern comprises a plurality of beamlets of laser energy, each beamlet corresponding to a particular location on a given individual component.

33. 33. The method of any one of claims 25 to 32, wherein the irradiation pattern comprises four beamlets of laser energy, each beamlet corresponding to a corner of a given individual component.

34. 34. The method of claim 1, wherein transferring the plurality of discrete components from the first substrate to the second substrate comprises transferring the plurality of discrete components to the second substrate in a face-down orientation.

35. 35. The method of claim 1, wherein the plurality of discrete components comprises light emitting diodes (LEDs).

36. a substrate assembly including a substrate, a dynamic release layer disposed on a surface of the substrate, and a plurality of individual components attached to the substrate by the dynamic release layer; an optical system including at least one optical element configured to split a laser beam from a source of laser energy into a plurality of beamlets, each beamlet configured to illuminate a corresponding area of ​​a top surface of the dynamic release layer; An apparatus comprising:

37. 37. The apparatus of claim 36, wherein the at least one optical element is configured to separate a laser beam from the light source into the plurality of beamlets, each beamlet having an illumination pattern.

38. 38. The apparatus of claim 36 or 37, wherein the illumination pattern comprises a plurality of beamlets of laser energy, each beamlet of the illumination pattern configured to illuminate a particular location on a given individual component.

39. The optical system comprises: a first optical element configured to separate a laser beam from the light source into an illumination pattern; a second optical element configured to separate the illumination pattern into the plurality of beamlets, each beamlet having the illumination pattern; and 40. The apparatus of claim 38, comprising:

40. 40. The apparatus of claim 39, wherein the first and second optical elements each comprise a diffractive optical element.

41. The optical system comprises: a first optical element configured to separate a laser beam from the light source into the plurality of beamlets; a second optical element configured to separate each of the plurality of beamlets into the illumination pattern; 41. Apparatus according to any one of claims 38 to 40, comprising:

42. 42. The apparatus of any one of claims 36 to 41, comprising a scanning mechanism configured to scan the multiple beamlets of laser energy over multiple regions of the dynamic release layer, each region of the dynamic release layer depositing a subset of the multiple individual components onto the substrate.

43. The optical system comprises: (i) a first configuration, the optical element being in a path of the laser beam between the source of laser energy and the dynamic release layer; (ii) a second configuration, wherein the optical element is not in a path of the laser beam between the source of laser energy and the dynamic release layer; and 43. Apparatus according to any one of claims 36 to 42, comprising:

44. 44. The apparatus of claim 43, wherein the optical element separates the laser beam into the plurality of beamlets when the optical system is in the first configuration.

45. 45. The apparatus of claim 43 or 44, wherein when the optical system is in the second configuration, the laser beam is incident on an upper surface of the dynamic release layer at a location corresponding to a location of one of the individual components.

46. 46. ​​The apparatus of claim 45, comprising a controller configured to control alignment of the laser beam with a location of one of the discrete components.

47. 47. The apparatus of claim 46, wherein the controller is configured to control alignment of the laser beam based on information indicative of one or more characteristics and qualities of each of the one or more individual components.

48. The optical system comprises: a first optical element configured to split the laser beam into a first number of beamlets; a second optical element configured to split the laser beam into a second number of beamlets; a switching mechanism configured to position the first optical element or the second optical element in a path of the laser beam; 48. Apparatus according to any one of claims 36 to 47, comprising:

49. 49. Apparatus according to any one of claims 36 to 48, comprising a source of laser energy.

50. 50. The apparatus of claim 49, wherein the source of laser energy comprises a laser.

51. 51. The apparatus of any one of claims 36 to 50, wherein irradiation of the areas of the dynamic release layer causes detachment of individual components aligned with the irradiated areas.

52. 52. The apparatus of any one of claims 36 to 51, wherein one or more of the wavelength and fluence of each beamlet of laser energy is sufficient to induce ablation of at least a partial thickness of the dynamic release layer in each of the irradiated regions.

53. 53. The apparatus of claim 52, wherein the wavelength or fluence of each beamlet is sufficient to induce ablation of a partial thickness of the dynamic release layer in each of the irradiated regions, the partial thickness ablation inducing deformation in each of the irradiated regions.

54. 54. The apparatus of claim 52 or 53, wherein the wavelength or fluence of each beamlet is sufficient to induce ablation of the entire thickness of the dynamic release layer in each of the irradiated regions.

55. 55. The device of any one of claims 36 to 54, wherein the adhesion of the dynamic release layer is responsive to a stimulus.

56. 56. The device of claim 55, wherein the dynamic release layer attachment is responsive to one or more of heat and ultraviolet light.

57. 57. The apparatus of any one of claims 36 to 56, wherein the discrete components include LEDs.

58. a source of laser energy; a substrate holder configured to receive a substrate; an optical system including a first optical element configured to split a laser beam from a source of laser energy into a plurality of beamlets, the optical system comprising: a first configuration, wherein the first optical element is disposed in a path of laser energy between the source of laser energy and the substrate holder; and an optical system, wherein at least one second configuration is one or more of: (i) a configuration in which a second optical element is disposed in a path of the laser energy; and (ii) a configuration in which neither the first optical element nor the second optical element is in a path of the laser energy; a controller configured to control a configuration of the optical system; An apparatus comprising:

59. 60. The apparatus of claim 58, comprising a scanning device configured to scan one or more laser beams output from the optical system relative to the substrate holder.

60. 60. The apparatus of claim 58 or 59, wherein the controller is configured to move the first optical element in and out of the path of the laser energy.

61. 61. An apparatus as claimed in any one of claims 58 to 60, comprising a stimulus application device configured to output stimuli comprising one or more of ultraviolet light and heat.

62. 62. Apparatus according to any one of claims 58 to 61, wherein the stimulus application device is arranged to apply the stimulus to the substrate when the substrate is present in the substrate holder.

63. a source of laser energy; a first substrate holder configured to receive at least one first substrate; an optical system including a first optical element configured to split a laser beam from a source of laser energy into a plurality of beamlets, the optical system comprising: a first configuration, the first optical element being disposed in a path of laser energy between the source of laser energy and the first substrate holder; and an optical system, wherein at least one second configuration is one or more of: (i) a configuration in which a second optical element is disposed in a path of the laser energy; and (ii) a configuration in which neither the first optical element nor the second optical element is in a path of the laser energy; a first controller configured to control a configuration of the optical system; a second substrate holder configured to hold the at least one second substrate, at least a portion of the second substrate holder being disposed below the first substrate holder; and a second controller configured to control the positioning of the second substrate holder relative to the first substrate holder; An apparatus comprising:

64. 64. The apparatus of claim 63, comprising a scanning device configured to scan one or more laser beams output from the optical system relative to the substrate holder.

65. 65. An apparatus as claimed in claim 63 or 64, comprising a stimulus application device configured to output stimuli comprising one or more of ultraviolet light and heat.

66. 66. An apparatus according to any one of claims 63 to 65, comprising a control system, the control system including the first controller and the second controller.

67. 67. The apparatus of any one of claims 63 to 66, wherein the second substrate holder is configured to hold a plurality of second substrates.

68. a substrate rack configured to hold a plurality of second substrates; a transfer mechanism controllable by the second controller to transfer one of the plurality of second substrates from the substrate rack to the second substrate holder; 68. Apparatus according to any one of claims 63 to 67, comprising:

69. 69. The apparatus of any one of claims 63 to 68, wherein the first substrate holder is configured to hold a plurality of first substrates.

70. a substrate rack configured to hold a plurality of first substrates; a transfer mechanism controllable by a third controller to transfer one of the first substrates from the substrate rack to the first substrate holder; 70. Apparatus according to any one of claims 63 to 69, comprising:

71. transferring a plurality of discrete components from a substrate, the discrete components being attached to the substrate by a dynamic release layer; The transferring step further comprises: transferring each of one or more first individual components from the substrate to a first destination using a first laser assisted transfer process, wherein the first individual components do not meet a quality standard; transferring a plurality of second individual components from the substrate to a second destination using a second laser assisted transfer process, wherein the second individual components meet a quality standard; A method comprising:

72. 72. The method of claim 71 , wherein transferring the plurality of second discrete components such that one or more second discrete components remain attached to the substrate comprises transferring fewer than all of the second discrete components.

73. 73. The method of claim 72, comprising individually transporting each of one or more of the second discrete components that remain attached to the substrate to the second destination.

74. 74. The method of claim 73, wherein the plurality of second individual parts form an array of individual parts at the second destination, and wherein individually transferring each of one or more of the remaining second individual parts includes transferring each of the remaining second individual parts to an empty position in the array.

75. the second laser assisted transfer process includes irradiating a plurality of areas of an upper surface of the dynamic release layer, each of the irradiated areas being aligned with a corresponding one of the second discrete components; 75. The method of any one of claims 71 to 74, wherein the irradiating simultaneously detaches the second discrete component from the substrate.

76. the first laser assisted transfer process includes irradiating an area of ​​an upper surface of the dynamic release layer for each of the first discrete components, the area being an area aligned with the first discrete components; 76. The method of any one of claims 71 to 75, wherein the irradiation causes the first discrete component to be detached from the substrate.

77. 77. The method of any one of claims 71 to 76, comprising reducing the adhesive strength of the dynamic release layer prior to transferring the one or more first discrete components.

78. 78. The method of claim 77, wherein reducing the adhesion of the dynamic release layer comprises exposing the dynamic release layer to one or more of heat and ultraviolet light.

79. the second destination comprises a target substrate; 80. The method of any one of claims 71 to 78, wherein transferring the plurality of second discrete components to the second destination comprises transferring the set of second discrete components to a mounting element disposed on an upper surface of the target substrate.

80. 80. The method of claim 79, including curing the attachment element to bond the transferred second discrete component to the target substrate.

81. 81. The method of claim 80, wherein curing the attachment element comprises exposing the attachment element to one or more of heat, ultraviolet light, and mechanical pressure.

82. 82. The method of any one of claims 79 to 81, comprising applying the mounting element to the target substrate.

83. 83. The method of any one of claims 71 to 82, wherein the second destination comprises a target substrate, and comprising bonding the transferred second discrete component to the target substrate.

84. the second destination comprises a target substrate having circuit components; 84. A method according to any one of claims 71 to 83, wherein the method includes the step of interconnecting circuitry of the transferred second discrete component to circuitry of the target substrate.

85. 85. The method of any one of claims 71 to 84, comprising transferring the discrete components from a donor substrate to the substrate.

86. 86. The method of claim 85, wherein transferring the discrete components from the donor substrate to the substrate comprises contacting a dynamic release layer on the substrate with the discrete components on the donor substrate.

87. 87. The method of claim 85 or 86, comprising singulating individual components on the donor substrate.

88. 88. The method of any one of claims 85 to 87, wherein the donor substrate comprises a dicing tape.

89. 89. The method of any one of claims 85 to 88, wherein the donor substrate comprises a wafer.

90. 90. The method of any one of claims 71 to 89, comprising applying the dynamic release layer to the substrate.

91. transferring discrete components from a support substrate to each of a plurality of target substrates, the discrete components being attached to the support substrate by a dynamic release layer; The transferring step further comprises: using a laser assisted transfer process to transfer the first set of discrete components to a first target substrate using a laser assisted transfer process; using the laser assisted transfer process to transfer a second set of the individual components to a second target substrate, the second set of individual components sharing a second characteristic different from the first characteristic; The method includes:

92. 92. The method of claim 91, comprising transferring the discrete components from a plurality of support substrates to the plurality of target substrates.

93. 93. The method of claim 92, comprising sequentially transferring the discrete components from each of the plurality of support substrates.

94. The transferring step further comprises: transferring discrete components from a first support substrate to the one or more target substrates in a transfer system; removing the first support substrate from a transfer position within the transfer system; placing a second support substrate at the transfer position; transferring discrete components from the second support substrate to one or more target substrates; Claim 92 or 93 comprising The method according to

95. The transferring step further comprises: transferring the first set of individual components to the first target substrate on a transfer system; removing the first target substrate from a transfer position of the transfer system; positioning the second target substrate at the transfer position for transferring the second set of discrete components; 95. The method of any one of claims 91 to 94, comprising:

96. the discrete components include LEDs; 96. The method of any one of claims 91 to 95, wherein the first and second properties comprise one or more of an optical property and an electrical property.

97. 97. A method according to any one of claims 91 to 96, wherein transferring each set of individual components to a corresponding target substrate comprises transferring each of the sets of individual components individually to the target substrate.

98. 98. A method according to any one of claims 91 to 97, wherein transferring each set of individual components to a corresponding target substrate comprises transferring some or all of the sets of individual components to the target substrate simultaneously.

99. 99. The method of any one of claims 91 to 98, wherein transferring a set of individual components to a corresponding target substrate comprises transferring the set of individual components onto a layer of die capture material disposed on an upper surface of the target substrate.

100. 100. The method of claim 99, comprising applying the die receiving material to each target substrate.

101. 101. The method of any one of claims 91 to 100, comprising reducing the adhesion of the dynamic release layer.

102. 102. The method of claim 101, wherein reducing the adhesion of the dynamic release layer comprises exposing the dynamic release layer to one or more of heat and ultraviolet light.

103. 103. The method of any one of claims 91 to 102, comprising transferring the discrete components from a donor substrate to the support substrate.

104. 104. The method of claim 103, wherein transferring the discrete components from the donor substrate to the support substrate comprises contacting the dynamic release layer on the support substrate with the discrete components on the donor substrate.

105. 105. The method of claim 103 or 104, wherein the donor substrate comprises a dicing tape.

106. 106. The method of any one of claims 103 to 105, wherein the donor substrate comprises a wafer.

107. 107. The method of any one of claims 91 to 106, comprising applying the dynamic release layer to the support substrate.

108. a substrate; and a plurality of pockets formed on an upper surface of the substrate; a spectrally shifting material disposed in each of the plurality of pockets and configured to emit light at one or more emission wavelengths in response to absorbing light at an excitation wavelength; an LED disposed in each of the plurality of pockets, each LED configured to emit light at the excitation wavelength, each LED oriented such that light emitted from the micro-LED illuminates a spectrally-shifting material disposed in a corresponding pocket; An apparatus comprising:

109. the spectral shifting material being a first spectrally shifting material configured to emit light at a first emission wavelength; a second spectrally shifting material configured to emit light at a second emission wavelength; and 109. The apparatus of claim 108, comprising:

110. 110. The apparatus of claim 109, wherein the first spectrally-shifting material is disposed in a first subset of the plurality of pockets and the second spectrally-shifting material is disposed in a second subset of the plurality of pockets.

111. 111. The apparatus of claim 110, wherein the pockets are arranged in a two-dimensional array, the first spectrally-shifting material being disposed in a first row of pockets of the array and the second spectrally-shifting material being disposed in a second row of pockets of the array.

112. 112. The device of any one of claims 109 to 111, wherein the spectrally shifting material comprises a second spectrally shifting material configured to emit light at a second emission wavelength, the first emission wavelength corresponding to red light, the second emission wavelength corresponding to green light, and the third emission wavelength corresponding to blue light.

113. 113. The apparatus of any one of claims 108 to 112, wherein the LEDs are oriented such that an emitting surface of each LED is away from a top surface of the substrate.

114. 114. The apparatus of claim 113, wherein each LED comprises a contact formed on a second surface of the LED, the second surface facing the light emitting surface.

115. 115. The apparatus of claim 114, comprising electrical connection wires in electrical contact with contacts of the LED.

116. 116. A device according to any one of claims 108 to 115, wherein the substrate is transparent to light of the one or more emission wavelengths.

117. 117. An apparatus according to any one of claims 108 to 116, wherein the substrate absorbs light at an excitation wavelength.

118. 118. The apparatus of any one of claims 108 to 117, comprising a planarization layer formed on an upper surface of the substrate.

119. 119. The device of claim 118, wherein the planarization layer is transparent to the one or more emission wavelengths.

120. 120. The device of any one of claims 108 to 119, wherein the spectrally shifting material comprises one or more of a phosphor, a quantum dot, and an organic dye.

121. 121. An apparatus according to any one of claims 108 to 120, wherein the apparatus comprises a display device.

122. 122. The device of claim 121, wherein each pocket, the spectrally-shifting material disposed therein, and the corresponding LED corresponds to a subpixel of the display device.

123. 123. The apparatus of any one of claims 108 to 122, wherein the apparatus comprises a solid state lighting device.

124. disposing a spectrally shifting material in each of a plurality of pockets formed on a top surface of the substrate, the spectrally shifting material being configured to emit light at one or more emission wavelengths in response to absorbing light at an excitation wavelength; assembling an LED into each of the plurality of pockets, each LED configured to emit light above the excitation light, each LED oriented such that light emitted from the LED illuminates a spectrally-shifting material disposed in a corresponding pocket; The method includes:

125. 125. The method of claim 124, comprising forming the plurality of pockets on a top surface of the substrate.

126. 126. The method of claim 125, comprising forming the plurality of pockets by one or more of embossing and lithography.

127. disposing the spectrally-shifting material; disposing a first spectrally-shifting material in a first subset of the plurality of pockets, the first spectrally-shifting material configured to emit light at a first emission wavelength; disposing a second spectrally-shifting material in a second subset of the plurality of pockets, the second spectrally-shifting material configured to emit light at a second emission wavelength; 127. The method of any one of claims 124 to 126, comprising:

128. 128. The method of any one of claims 124 to 127, wherein assembling an LED in each of the plurality of pockets comprises assembling the LED such that an emitting surface of each micro LED is away from a top surface of the substrate.

129. 129. The method of any one of claims 124 to 128, wherein assembling LEDs in each of the plurality of pockets comprises transferring multiple LEDs simultaneously to corresponding pockets.

130. 130. The method of claim 129, wherein transferring multiple LEDs simultaneously comprises transferring the multiple LEDs by a massively parallel laser assisted transfer process.

131. 131. A method according to any one of claims 124 to 130, comprising forming an electrical connection to each LED.

132. 132. The method of claim 131, comprising forming electrical connections to contacts on a second surface of each LED, the second surface facing an emitting surface of each LED.

133. 133. The method of any one of claims 124 to 132, comprising forming a planarizing layer on an upper surface of the substrate.

Images